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Laurent PEDESSEAU
22
Documents
Identifiants chercheurs
- laurent-pedesseau
- 0000-0001-9414-8644
- IdRef : 069404003
Présentation
Education:
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**2019:** Habilitation Degree in Physics, Université Rennes (France)
**2004:** Ph.D in Physics, Université Paul Sabatier at Toulouse (France); Advisor: Prof. David Mainprice
About:
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Dr Pedesseau is an Associate Professor at the INSA Rennes (FOTON Institute - CNRS) whose work is aimed at the understanding of physical processes in the III-V semiconductor nanostructures for silicon photonics, the hybrid perovskites and novel materials for photovoltaics, and optoelectronic device simulations for optical-communications. His recent scientific interests include: 1) polar surface and interface energies of semiconductors; 2) first principles simulation (including the spin-orbit effect) of mechanical stability, electronic, and optical properties of 3D and 2D semiconductors; 3) electronic structure theory beyond the DFT such as hybrid functionals (HSE), many-body corrections GW, and DFT-1/2; 4) HPC technology for exotic and highly demanding simulations in terms of the large memory footprint and extensive CPUs communications (thousands).
Employment:
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**2011-present:** Associate Professor, Physics Department, INSA of Rennes, France
**2008-2011:** Postdoctoral fellow, ICG and LCC, University of Montpellier, France
**2006-2008:** Postdoctoral fellow, Physics Department, INSA of Rennes, France
**2004-2006:** Postdoctoral fellow, Chemistry department, University College London, London, UK
**2001-2004:** Ph.D. fellow, University Paul Sabatier, Toulouse, France
Research interests:
======================
Material science, Semiconductor physics, Quantum nanostructures, Solar Energy, Advanced Materials
Theoretical physics, Phase transitions, Dielectric and piezoelectric properties
Density functional theory, k.p method, Finite element method
Administrative responsibilities:
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**- Since 2016:** Leader of workgroup 1 (Nanostructure) for the COST Action MP1406 - MultiscaleSolar
**- Since 2016:** In charge of International Affairs for the Materials science dept. at the INSA Rennes.
Selected publications:
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\- Structural and thermodynamic limits of layer thickness in 2D halide perovskites. ***PNAS***, 116, 58, **2019**
\- Concept of Lattice mismatch an emergence of surface states in 2D hybrid perovskite QW. ***Nano Lett.***, 18, 9, **2018**
\- Universal description of III-V/Si epitaxial growth processes. ***Phys. Rev. Materials***, 2, 060401(R), **2018**
\- A stress-free and textured GaP template on Si for sol. wat. split.. ***Ad. Funct. Mat.***, 28, 1801585, **2018**
\- Scaling law for excitons in 2D perovskite quantum wells. ***Nat. Com.***, 9, 2254, **2018**
\- Anharmonicity and Disorder in the Black Phases of etc. ***ACS Nano***, 12, 3477, **2018**
\- Composite Nature of Layered Hybrid Perovskites: etc. ***ACS Nano***, 12, 3321, **2018**
\- Hybrid Dion–Jacobson 2D Lead Iodide Perovskites. ***JACS***, 140, 3775, **2018**
\- Decreasing the electronic confinement in layered perovskites through intercalation. ***Chem. Sci.***, **2017**
\- Extremely efficient internal exciton dissociation through edge states in 2D HOP. ***Science***, 355, **2017**
\- Advances and Promises of Layered Halide Hybrid Perovskite Semiconductors. ***ACS Nano***, 10, **2016**
\- Rashba and Dresselhaus Effects in HOP: From Basics to Devices. ***ACS Nano***, 9, 11557, **2015**
\- First-principles study of a NBS glass-former. I &II. ***Phys. Rev. B*** 91, 134201 & 134202, **2015**
\- Analysis of Multivalley and Multibandgap Absorption etc. ***J. Phys. Chem. C*** 118, 11566, **2014**
\- DFT and k·p modelling of the phase transitions of lead HOP etc. ***RRL*** 8, 31, **2014**
\- Importance of soc in hop for photovoltaic applications. ***J. Phys. Chem. Lett.*** 4, 2999, **2013**
\- Electronic model for self-assembled hybrid perovskite etc. ***Phys. Rev. B*** 86, 205301, **2012**
Publications
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Study of MoS2 Deposited by ALD on c-Si, Towards the Development of MoS2/c-Si Heterojunction PhotovoltaicsCrystals, 2022, 12 (10), pp.1363. ⟨10.3390/cryst12101363⟩
Article dans une revue
hal-03792838v1
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A Stress-Free and Textured GaP Template on Silicon for Solar Water SplittingAdvanced Functional Materials, 2018, 28 (30), pp.1801585. ⟨10.1002/adfm.201801585⟩
Article dans une revue
hal-01803990v1
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Universal description of III-V/Si epitaxial growth processesPhysical Review Materials, 2018, 2 (6), pp.060401(R). ⟨10.1103/PhysRevMaterials.2.060401⟩
Article dans une revue
hal-01833206v1
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Structural and optical properties of (In,Ga)As/GaP quantum dots and (GaAsPN/GaPN) diluted-nitride nanolayers coherently grown onto GaP and Si substrates for photonics and photovoltaics applicationsProceedings of SPIE, the International Society for Optical Engineering, 2013, Quantum sensing and nanophotonic devices X, 8631, pp.863126. ⟨10.1117/12.2012670⟩
Article dans une revue
hal-00842763v1
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Optical and structural characterization of thin MoS2 layers on SiO2/Si substrates, towards the development of MoS2/Si heterojunction photovoltaics.44th International Semiconductor Conference (CAS 2021), Oct 2021, Online, Romania. ⟨10.1109/CAS52836.2021.9604140⟩
Communication dans un congrès
hal-03796793v1
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A universal mechanism to describe III-V epitaxy on Si20th European Molecular Beam Epitaxy Workshop (Euro-MBE 2019), Feb 2019, Lenggries, Germany
Communication dans un congrès
hal-02048639v1
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Solar Water Splitting: surface energy engineering of GaP Template on SiEuropean Materials Research Society - Spring Meeting 2019 (E-MRS 2019 Spring Meeting), Apr 2019, Phoenix, United States
Communication dans un congrès
hal-02114792v1
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(114) GaP surface texturation on Si for water splittingEMRS Spring meeting 2018, Jun 2018, Strasbourg, France
Communication dans un congrès
hal-01708047v1
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GaP Template on Si for Solar Water Splitting: surface energy engineeringnanoGe Fall Meeting 2018 (NGFM18), Oct 2018, Torremolinos, Spain
Communication dans un congrès
hal-01909068v1
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A universal mechanism to describe the III-V on Si growth by Molecular Beam Epitaxy20th International Conference on Molecular-Beam Epitaxy (ICMBE 2018), Sep 2018, Shanghai, China. pp.Th-C1-3(S)
Communication dans un congrès
hal-01910554v1
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III-V/Si heterogeneous growth : thermodynamics and antiphase domains formation34th International Conference on the Physics of Semiconductors (ICPS 2018), Jul 2018, Montpellier, France
Communication dans un congrès
hal-01910543v1
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A general III-V/Si growth process descriptionEuropean Materials Research Society - Spring Meeting 2018 (E-MRS 2018 Spring Meeting), Jun 2018, Strasbourg, France
Communication dans un congrès
hal-01910535v1
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Large scale textured GaP(114) growth on vicinal Si substrate by Molecular Beam Epitaxy for water splitting applications20th International Conference on Molecular-Beam Epitaxy (ICMBE 2018), Sep 2018, Shanghai, China. pp.Tu-P-43(S)
Communication dans un congrès
hal-01910556v1
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Nano Beam X-ray Scattering on GaP/Si for III-V Monolithic Integration on SiliconEuropean Materials Research Society - Spring Meeting 2018 (E-MRS 2018 Spring Meeting), Jun 2018, Strasbourg, France
Communication dans un congrès
hal-02352639v1
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III-V/Si 3D crystal growth: a thermodynamic descriptionEnergy Materials Nanotechnology Meeting 2017 / Collaborative Conference on Crystal Growth (EMN 3CG 2017), Aug 2017, Berlin, Germany
Communication dans un congrès
hal-01708282v1
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GaP/Si(001) polar-on-nonpolar epitaxial growth revisited by scanning tunneling microscopy.Réunion plénière du GDR Pulse (PULSE 2017), Oct 2017, Paris, France
Communication dans un congrès
hal-01715954v1
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GaP/Si(001) polar-on-nonpolar epitaxial growth revisited by scanning tunneling microscopy16th International Conference on the Formation of Semiconductor Interfaces (ICFSI-16), Jul 2017, Hannover, Germany
Communication dans un congrès
hal-01715971v1
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3D GaP/Si(001) growth mode and antiphase boundaries19th International Conference on Molecular-Beam Epitaxy (IC-MBE 2016), Sep 2016, Montpellier, France
Communication dans un congrès
hal-01497144v1
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Etude de la croissance cohérente de GaP/Si(001) en couche minceRéunion plénière du GDR Pulse (PULSE 2016), Jul 2016, Marseille, France
Communication dans un congrès
hal-01497149v1
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Study of the 3D growth mode of III-V on Si by DFTRéunion plénière du GDR Pulse (PULSE 2017), Oct 2017, Paris, France
Poster de conférence
hal-01708149v1
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Relationship between antiphase domains, roughness and surface/interface energies during the epitaxial growth of GaP on SiEuropean Materials Research Society - Spring Meeting 2016 (E-MRS 2016 Spring Meeting), May 2016, Lille, France
Poster de conférence
hal-01497064v1
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X-ray Coherent Scattering on GaP/Si for III-V Monolithic Integration on SiliconInternational Workshop on Phase Retrieval and Coherent Scattering (COHERENCE 2016), Jun 2016, Saint-Malo, France. 2016
Poster de conférence
hal-01496666v1
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