Guilhem Almuneau
Publications
Publications
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940-nm VCSELs grown by molecular beam epitaxy on Ge(001)2026 |
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50 Gbit/s Transmission at 850 nm with a Surface-Normal Electroabsorption ModulatorPhotonics West OPTO, SPIE, Jan 2025, San Francisco, United States |
Transparent conductive electrodes based on GaAs-metal deep sub-wavelength high contrast gratingQuantum Sensing and Nano Electronics and Photonics XXI. Symposium: PW25O OPTO, Jan 2025, San Francisco California, United States |
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Some selected in situ characterization tools for MBE growth and their complementaritySummer scholl on Epitaxy - MATEPI 2025, GDR MATEPI, Jun 2025, Porquerolles, France |
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High-Speed Tunable Interferometric Spectral Shaper for VCSEL Manufacturing Inspection2025 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC), Jun 2025, Munich, Germany. pp.1-1, ⟨10.1109/CLEO/Europe-EQEC65582.2025.11111359⟩ |
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Thermophotovoltaics: photonics and thermal managementOptica Advanced Photonics Congress, OPTICA, Jul 2025, Marseille, France |
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In-situ measurement of AlAs growth rate by magnification inferred curvature methodEUROMBE 2025, CHREA; UniCA, Mar 2025, Auron, France |
Molecular Beam Epitaxy of Ge-VCSELsVCSEL Day 2025, Sep 2025, Lodz (Poland), Poland |
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Design of a 2D metallic photonic crystal for spectral control in thermophotovoltaic devicesNanophotonics and Micro/Nano Optics International Conference 2025, Oct 2025, Paris, France |
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Insights into cooling requirements of thermophotovoltaic devicesOptica Advanced Photonics Congress, OPTICA, Jul 2025, Marseille, France |
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Insights into cooling requirements for thermophotovoltaic devicesWorkshop TREE 3, GDR CNRS 2198 TREE, May 2025, Villeurbanne, France |
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Some selected in situ characterization tools for MBE growth and their complementarityEuropean Workshop on Innovative and Advanced Epitaxy, COST OPERA, Jun 2024, Vilnius (Lituanie), Lithuania |
IN SITU AND REAL TIME CHARACTERIZATION INSTRUMENTS FOR MOLECULAR BEAM EPITAXY AND CHEMICAL VAPOR DEPOSITIONJNMO 2024 : Journées Nano, Micro et Optoélectronique, Oct 2024, Sète, France |
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Epicentre: A RIBER/LAAS CNRS joint lab for optimization and automation of MBE processVCSEL Day 2024, LAAS-CNRS, Sep 2024, Toulouse, France |
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Emerging technology for future VCSELsICMOVPE XXI, May 2024, LAs Vegas, Nevada, United States |
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Impact of the substrate transfer on the efficiency of GaAs solar cellsJournées Nationales du Photovoltaïque, Denis Mencaraglia, Dec 2024, Dourdan, France |
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Cryogenic optical interfacing for scalable quantum computing: analysis of VCSEL operation and thermal profiles as an optical LinkPhysics and Simulation of Optoelectronic Devices XXXII, Jan 2024, San Francisco, United States. pp.7, ⟨10.1117/12.3001360⟩ |
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Simulating III-V multi-junction solar cells for space applications: Performance insights and design challenges using open source softwareJournées nationales du photovoltaïque 2024, Jan 2024, Dourdan, France |
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Mesures in-situ combinées en Épitaxie par jet moléculaire : Cas de l’AlGaAs à température de croissanceJournées Nationales de Micro- et Optoélectronique, Oct 2024, Sète (FR), France |
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Design and fabrication of nanostructured photothermal interfaces for hybrid energy devicesMicro and Nano Engineering 2024 (MNE2024), IMNES; LAAS, Sep 2024, Montpellier, France |
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Computational inspection of VCSEL oxidation exploiting a spectrally-shaped illuminatorImaging Systems and Applications, Jul 2024, Toulouse, France. pp.IM1G.5, ⟨10.1364/ISA.2024.IM1G.5⟩ |
Unveiling the properties of GaInAsN dilute nitride materials for high-efficiency spatial Multi-Junction Solar CellsPV School 2024, May 2024, Les Houches, France |
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Development of VCSELs for cyogenic (4.2 K) optical interfaces2023 IEEE Photonics Society Summer Topicals Meeting Series (SUM), Jul 2023, Sicile, Italy. pp.1-2, ⟨10.1109/SUM57928.2023.10224417⟩ |
Oxidation of III-V semiconductors and applicationsOxyde+, CNRS GDR Oxyfun, Mar 2023, Virtuel, France |
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Caractérisation à 10 Gbit/s d'un modulateur à électro-absorption à cavité verticale à 850 nmJournées nationales de l'optique guidée (JNOG), Jul 2023, Lyon, France |
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Analysis of thermally stressed GaAs solar cells for operation in terrestrial hybrid systems18th International Conference on Concentrator Photovoltaic Systems (CPV-18), Apr 2022, Miyazaki, Japan. pp.020004, ⟨10.1063/5.0147287⟩ |
Solar cells operating at high temperatureWorkshop « Photovoltaïque-Thermoélectricité », iCUBE, UNISTRA, Oct 2022, Strasbourg, France |
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In-situ magnification inferred curvature measurement applied to dilute bismide growth21st International Conference on Molecular Beam Epitaxy (ICMBE 2021), Sep 2021, Mexico (virtual), Mexico |
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Sb-based interband cascade Mid-IR devices with top GaAs metamorphic layersCompound Semiconductor Week 2021 (CSW 2021), May 2021, Stockholm (online), Sweden |
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Source structurée spectralement pour le suivi de procédés de microfabricationOptique 2021, Jul 2021, Dijon, France |
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Insight into the factors affecting the performances of a conventional GaAs solar cell operating at up to 200 °CJournées Nationales du Photovoltaïque 2021, Nov 2021, Dourdan, France |
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Development of 1 eV InGaAsN PIN subcell for MJSC integration and space application47th IEEE Photovoltaic Specialists Conference (PVSC 47), IEEE, Jun 2020, Calgary, Canada. ⟨10.1109/PVSC45281.2020.9300570⟩ |
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Degradation study of InGaAsN PIN solar cell under 1 MeV electron irradiationRADECS 2020, Oct 2020, Online, France |
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Progress in Interband Cascade Lasers: from edge emitting lasers to VCSELs2020 22nd International Conference on Transparent Optical Networks (ICTON), Jul 2020, Bari, Italy. pp.1-4, ⟨10.1109/ICTON51198.2020.9203274⟩ |
Controlled Oxidation of III-V Semiconductors for Photonic Devices21st International Conference on Transparent Optical Networks (ICTON 2019), Jul 2019, Angers, France. pp.1-4, ⟨10.1109/ICTON.2019.8840290⟩ |
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Technological bricks development for the vertical integration of a Modulator onto a VCSEL for high-speed communicationsJournées Nationales sur les Technologies Emergentes, Nov 2019, Grenoble, France. 2p |
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29GHz-bandwidth monolithically integrated EAM-VCSELWorkshop VCSEL Day 2019, May 2019, Bruxelles, Belgium |
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Towards MIR VCSELs operating in CW at RTCompound Semiconductor Week 2019 (CSW 2019), May 2019, Nara, Japan. ⟨10.1109/iciprm.2019.8819164⟩ |
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Controlling AlGaAs oxidation anisotropy for VCSEL applicationsVCSEL days, May 2019, Brussels, Belgium |
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Développement de sous-cellules pin InGaAsN à 1 eV pour intégration en MJSC et applications spatialesJournées Nationales du Photovoltaïque, Dec 2019, Dourdan, France |
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Integration of Electro-Absorption Modulator in a Vertical-Cavity Surface-Emitting LaserSPIE Photonics West, SPIE, Jan 2018, San Francisco, United States. ⟨10.1117/12.2287465⟩ |
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High frequency characterization of a vertical electro-absorption modulator for data communications2018 International Topical Meeting on Microwave Photonics (MWP), IEEE, Oct 2018, Toulouse, France |
Antiresonant Oxide Island as a Measure for Improved Single-Mode Emission in VCSELs20th International Conference on Transparent Optical Networks (ICTON 2018), Jul 2018, Bucarest, Romania |
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Selective oxidation of AlGaAs for confinement in III-V photonic devices16th NAMIS workshop ” Micro- and nanosystems, large area electronics and biofunctionalities towards novel integrated smart systems“, Jun 2018, Oulu, Finland. 36p |
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Design of an Electro-absorption modulator for integration onto a VCSELSPIE Photonics Europe Semiconductor Lasers and Laser Dynamics VII, SPIE, Apr 2018, Strasbourg, France |
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Numerical modeling of arrow-VCSELs with oxide island18th international conference on laser optics (ICLO 2018), Jun 2018, Saint Pertersburg, Russia. ⟨10.1109/LO.2018.8435803⟩ |
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INGENIERIE DE MICRO-RESONATEURS A MODES DE GALERIE EN ALGAAS/ALOX COUPLES VERTICALEMENTJournées Nationales de l'Optique Guidée (JNOG 2017), Jul 2017, Limoges, France. pp.JNOG O3.4 |
Pseudomorphic and metamorphic (Al)GaAsSb/(Al)InGaAs tunnel junctions for GaAs based Multi-Junction Solar CellsEuropean PV Solar Energy Conference and Exhibition, Sep 2017, Amsterdam, Netherlands |
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Tampon graduel et jonction tunnel de type II relaxés sur GaAs pour sous cellules solaires métamorphiques à 1 eVJournées Nationales du Photovoltaïque (JNPV), Dec 2017, Dourdan, France. pp.668 - 676 |
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Comparaison d'absorbeurs à 1 eV à base de nitrure dilué accordés en maille sur GaAs: GaInAsN, GaAsSbN et GaInAsN(Bi)Journées Nationales du Photovoltaïque (JNPV 2017), Dec 2017, Dourdan, France |
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Vertical integration of an electro-absorption modulator within a VCSEL device19th International Conference on Transparent Optical Networks (ICTON 2017), Jul 2017, Girone, Spain. pp.1 - 4, ⟨10.1109/ICTON.2017.8024894⟩ |
Vertical integration of an Electro-Absorption Modulator on a VCSEL to reach very high modulation speedVCSEL Days 2017, Jun 2017, Cardiff, United Kingdom |
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Jonctions tunnel AlGaAsSb/AlGaInAs accordées et relaxées sur substrat GaAs pour les applications photovoltaïquesRéunion plénière du GDR PULSE 2017 ( Processus Ultimes d'épitaxie de Semiconducteurs 2017), Oct 2017, Paris, France |
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Coupled mode analysis of micro-disk resonators with an asymmetric- index-profile coupling regionPhotonics West 2017 - LASE, SPIE, Jan 2017, San Francisco, United States. pp.1009001D-1 -- 1009001D-11, ⟨10.1117/12.2276094⟩ |
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III-V-semiconductor vertically-coupled whispering-gallery mode resonators made by selective lateral oxidationSPIE LASE, Feb 2016, San Francisco, United States. ⟨10.1117/12.2210968⟩ |
VCSELs fabricated using self-aligned processingWorkshop VCSEL Day 2016, Jun 2016, Darmstadt, Germany. 2p |
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Réalisation de guides d’onde enterrés avec un procédé quasi-planaireJournées Nationales de l'Optique Guidée (JNOG), Jul 2016, Bordeaux, France. 3p |
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Type II heterojunction tunnel diodes based on GaAs for multi-junction solar cells: Fabrication, characterization and simulation2016 IEEE Nanotechnology Materials and Devices Conference (NMDC), Oct 2016, Toulouse, France. pp.7777108, ⟨10.1109/NMDC.2016.7777108⟩ |
Self-aligned BCB planarization method for high-frequency signal injection in a VCSEL with an integrated modulatorSPIE Photonics Europe, Apr 2016, Bruxelles, Belgium. 2p |
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VCSELs fabricated using self-aligned processing42nd Micro and Nano Engineering (MNE), Sep 2016, Vienna, Austria |
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AlOx/AlGaAs technology for multi-plane integrated photonic devices2015 17th International Conference on Transparent Optical Networks (ICTON), Jul 2015, Budapest, Hungary. 4p., ⟨10.1109/ICTON.2015.7193701⟩ |
Technological Solutions for Embedded Oxide-based Confinement in New Photonic III-V Device ArchitecturesAsia Communications and Photonics Conference, Nov 2015, Hong Kong, China. ⟨10.1364/ACPC.2015.ASu1A.3⟩ |
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GaAs/AlOx high-contrast grating mirrors for mid-infrared VCSELsPhotonics West, SPIE, Feb 2015, San Francisco, United States. pp.93720S-93720S-9, ⟨10.1117/12.2084515⟩ |
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Parameter-tolerant design of high contrast gratingsPhotonics West, SPIE, Feb 2015, San Francisco, United States. pp.93720N-93720N-8, ⟨10.1117/12.2081595⟩ |
III-V based Heterojunction Tunnel for Multijunction Solar CellsPULSE summer school : Epitaxy promises and updates, Sep 2015, Porquerolles, France |
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Jonctions tunnels à base d'hétérostructures à semiconducteurs III-V pour les cellules solaires multi-jonctions à haut rendementJournées Nationales du Photovoltaïque 2015 (JNPV 2015), Dec 2015, Dourdan, France |
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The EMRP project Metrology for III-V materials based high efficiency multi-junction solar cellsConference on Precision Electromagnetic Measurements (CPEM 2014), Aug 2014, Rio de janeiro, Brazil. ⟨10.1109/CPEM.2014.6898387⟩ |
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Technologies of oxide confinement and high contrast grating mirrors for mid-infrared VCSELsICTON 2014, Jul 2014, Graz, Austria. pp.1-4, ⟨10.1109/ICTON.2014.6876343⟩ |
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Vertically-coupled AlGaAs microdisks using selective lateral oxidation17th European Conference on Integrated Optics, and the 19th Microoptics Conference (ECIO-MOC 2014), Jun 2014, Nice, France. pp.P011 |
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Solutions technologiques planaires pour un confinement par oxyde enterré pour de nouvelles architectures VCSELColloque du GdR Nanofils et GdR Pulse, Oct 2014, Toulouse, France |
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Planar technological solutions for emmbedded oxide-based confinement for new VCSELs architecturesEuropean VCSEL Day, May 2014, Rennes, France. pp.1-2 |
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Vertically-coupled AlGaAs/AlOx microdisksColloque du GDR Oxyfun 2014, Jun 2014, Autrans, France |
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Second harmonic generation from a QCL in an AlGaAs waveguideSPIE Photonics Europe 2014, Apr 2014, Brussels, Belgium |
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Technological solutions for embedded oxide-based confinement for new VCSELs architecturesColloque du GDR Oxyfun 2014, Jun 2014, Autrans, France |
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Mesures de pertes optiques dans des guides d’onde slot GaAs/AlOxColloque du GDR Oxyfun "Oxydes pour l’Optique et la Photonique", Dec 2014, Meudon, France. 2p |
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GaSb VCSEL with III-As metamorphic confinement layer grown by molecular beam epitaxyeuro-MBE conference, Mar 2013, Levi, Finland. pp.240-241 |
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GaAs-based monolithic high contrast gratings for mid-infrared VCSELsSemiconductor and Integrated OptoElectronics 2012 (SIOE), 2012, Cardiff, United Kingdom |
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AlOx/GaAs high contrast grating mirrors for mid infrared VCSELsICTON 2012, Jul 2012, Coventry, United Kingdom. pp.1-3, ⟨10.1109/ICTON.2012.6254396⟩ |
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Wet thermal oxidation of AlAsSb for lateral confinement in GaSb-based VCSELsInternational Symposium on Compound Semiconductors 2011 (ISCS), May 2011, Berlin, Germany. 2p |
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Optimized GaAs High Contrast Grating Design and Fabrication for Mid-infrared Application at 2.3 μmFrontiers in Optics 2011, Oct 2011, San Jose, United States. pp.CD-ROM Proceedings |
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Towards high-quality GaInAsN(Sb) alloys for space multi-junction solar cells grown by Molecular Beam EpitaxyJournées Nationale du Photovoltaïque, Nov 2025, Strasbourg (France), France |
Longitudinal-optical phonon broadening due to nitrogen atom incorporation in InGaAsN/GaAs quantum wells5th International Conference on Light–Matter Coupling in Nanostructures (PLMCN5)., Jun 2005, Glasgow, United Kingdom. pp.3887, ⟨10.1002/pssc.200562039⟩ |
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Lasers à cavité verticale à double cavité pour la génération d'un battement THzJournées de la Matière Condensée, 2004, Nancy, France |
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VCSEL à deux cavités couplées pour l'émission THzGDR "Microcavités et Cristaux Photoniques", 2001, Montpellier, France |
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Un laser semiconducteur à deux cavités verticales couplées pour la réalisation d'un battement térahertzJournées Nationales d'Optique Guidée, 2000, Toulouse, France. pp.181-183 |
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Tailoring coupled-cavity vertical-emitting semiconductor-laser for THz-beatingsNATO Advanced Research Workshop on TeraHertz Sources and Systems, 2000, Castera-Verduzan, France |
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Epitaxial long wavelength DBRs on InP : AlAsSb or lateral oxidationIEEE/LEOS Summer Topical Meeting Proceedings, 1999, San Diego, United States |
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Conception d'un générateur opto-microonde basé sur une structure laser semiconducteur à deux cavités verticales coupléesJournées Nationales d'Optique Guidée, 1999, Limoges, France |
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AlGaAsSb based-on Bragg mirrors and microcavities for 1.3 μm and 1.55 μm6\textsuperscripte Journées de la Matière Condensée and 17\textsuperscriptth General Conference of the Condensed Matter Division, 1998, Grenoble, France |
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Vertical cavity structures on InP and GaSb with AlGaAsSb/AlAsSb Bragg mirrors for 1.55~μm emissionTenth International Conference on Molecular Beam Epitaxy Proceedings, 1998, Cannes, France |
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First steps towards 1.3-1.55~μm antimonide vertical cavity semiconductor lasersOSA Annual Meeting Proceedings, Symposium on Advances in Vertical-Cavity Surface Lasers, 1997, Long Beach, United States |
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Croissance des antimoniures du système AlGaAsSb en accord de maille sur InP. Application aux miroirs de Bragg12\textsuperscripte Séminaire National : Epitaxie par Jets Moléculaires, 1997, Saint-Aygulf, France |
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AlGaAsSb/AlAsSb Bragg Mirrors on InP for 1.3 and 1.55~μm Vertical Cavity Surface Emitting LasersIEEE/LEOS Summer Topical Meeting Proceedings, 1997, Montreal, Canada |
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Miroir de Bragg AlGaAsSb/AlAsSb sur InP de pouvoir réflecteur ≥ 95% à 1,4 μmJournées Nationales de Microélectronique et Optoélectronique III-V, 1997, Chantilly, France |
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Croissance de multi-puits quantiques dans le système (Al)GaInAs sur AlGaAsSb accordé sur InPSéminaire National : Epitaxie par Jets Moléculaires, 1997, Saint-Aygulf, France |
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Réalisation de miroirs de Bragg AlAsSb/GaAsSb sur InPJournées de la Matière Condensée, 1996, Orléans, France |
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(Al)GaAsSb/AlAsSb Bragg mirrors for 1.5 μm useEuropean Semiconductor Laser and Amplifier Workshop, 1996, Lillehammer, Norway |
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Miroirs de Bragg à haut pouvoir réflecteur GaAsSb/AlAsSb pour lasers à semiconducteurs à cavité verticale émettant à 1,5 μmJournées Nationales d'Optique Guidée, 1996, Nice, France |
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Automated growth of AlAs/GaAs Bragg mirror with real-time feedback reflectometry.EUROMBE 2025, Mar 2025, Auron, France. 2025 |
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Bonding of GaAs photovoltaic cells on copper substrate by thermocompression for photovoltaic thermoelectric hybridizationIEEE - Photovoltaic Specialist Conference (IEEE-PVSC 2025), Jun 2025, Montréal, Canada. ⟨10.1109/PVSC59419.2025.11132803⟩ |
Evaluation of cooling requirements for thermophotovoltaic devicesJournées Nationales du Photovoltaïque, Nov 2025, Strasbourg, France |
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Thermophotovoltaics: status and some open questionsPV School 2024 -Thematic school on Physics of Solar Cells, May 2024, Les Houches, France. 2024 |
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Combining in-situ measurements in molecular beam epitaxy : Study of AlGaAs properties at growth temperatureVCSEL Day 2024, Sep 2024, Toulouse, France. , 2024 |
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VCSEL Oxidation Monitoring Using Spectrally-Shaped IlluminationVCSEL Days 2024, Nov 2024, Toulouse, France |
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Disordered nanostructures for light trapping in tandem solar cellsJournées Nationales du Photovoltaïque, Dec 2024, Dourdan, France. 2024 |
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Controlling growth rate and band-gap by combining in situ measurements and reflectance model for molecular beam epitaxy fabricationPV School 2024 -Thematic school on Physics of Solar Cells, May 2024, Les Houches, France. 2024 |
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Technological realization of a hybrid photovoltaic-thermoelectric systemPhysics of Solar Cells: from basic principles to high performance, May 2024, Les Houches, France. 2024 |
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Two birds with one tool: using thermocompression for both metallic contact annealing and wafer bonding of GaAs solar cells13e édition des Journées Nationales du Photovoltaïque, Dec 2023, Dourdan, France. 2023 |
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Transparent electrodes based on GaAs/Au subwavelength gratings for VCSEL applicationsVCSEL Day 2023, Sep 2023, Turin (Italie), Italy. 2023 |
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Integration of a GaAs solar cell in a hybrid photovoltaic-thermoelectric systemELaboration of NANOmaterials for the recovery, conversion, transport and storage of energy, Jun 2023, Aussois, France. 2023 |
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Transparent electrodes based on GaAs/metal subwavelength gratings for VCSEL applicationsVCSEL Day 2023, Sep 2023, Turin (IT), Italy. 2023 |
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Improved oxide VCSEL aperture inspection using hyperspectral imagingVCSEL day 2023, Sep 2023, Turin (IT), Italy. 2023 |
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Spectrally-shaped illumination for improved optical inspection of lateral III-V-semiconductor oxidationConference on Lasers and Electro-Optics Europe (CLEO/Europe EQEC 2023), Jun 2023, Munich, Germany. pp.CH-P.16, 2023 |
Etude de cellules solaires InGaAsN/GaAs en environnement radiatif spatialJNPV 2022, Nov 2022, Dourdan, France. 2022 |
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Jouvence d’une station de test sous pointesPrésentations des activités service I2C, Jun 2022, Toulouse, France. 2022 |
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Hybrid Photovoltaic-thermoelectric systems for solar energy harvestingJournées Nationales du Photovoltaïque, Nov 2022, Dourdan, France. 2022 |
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Monolithically integrated 850-nm VCSEL / Electro-Absorption Modulator structures grown by MBE22nd International Conference on Molecular Beam Epitaxy (ICMBE 2022), Sep 2022, Sheffield, United Kingdom. 2022 |
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29GHz-bandwidth monolithically integrated EAM-VCSELThe European Conference on Lasers and Electro-Optics (CLEO Europe) 2019, Jun 2019, Munich, Germany. 2019 |
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29GHz-bandwidth monolithically integrated EAM-VCSEL2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC), Jun 2019, Munich, Germany. IEEE, pp.1-1, 2019, ⟨10.1109/cleoe-eqec.2019.8872590⟩ |
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Oxydation sélective contrôlée de semiconducteurs III-V pour les composants photoniquesGDR OXYFUN : Couches minces d'oxydes fonctionnels et applications en électronique et photonique, Oct 2019, Caen, France |
Oxydation d’AlGaAs: Vers une maitrise de l’anisotropie16eme Journees Nano, Micro et Optoelectronique (JNMO), Jun 2018, Cap Esterel, France. 2018 |
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Optimisation et Caractérisation hyper-frequence d’un modulateur en vue de son integration verticale sur un VCSEL16ème Journées National de Micro Nano et Optoélectronique (JNMO 2018), Jun 2018, Cap Esterel, France. 2018 |
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Contrôle des fronts d'oxydation d'AlGaAs pour l'optique guidéeOptique Toulouse 2018, Jul 2018, Toulouse, France. poster P146, 2018 |
Jonctions tunnel à très hautes performances à base d'hétérostructures de type II sur GaAs pour les cellules solaires multijonctionJounées Nationales du Photovoltaïque (JNPV 2018), Dec 2018, Dourdan, France. 2018 |
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Buried Waveguides using a Quasi-Planar ProcessEuropean Conference on Integrated Optics, Apr 2017, Eindhoven, Netherlands. 2017 |
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Anisotropic oxidation of circular mesas for complex confinement in photonic devices: Experiments and modelling19th International Conference on Transparent Optical Networks (ICTON 2017), Jul 2017, Girone, Spain. pp.1 - 1, 2017, ⟨10.1109/ICTON.2017.8025118⟩ |
Modélisation semiclassique du courant tunnel interbandes dans les jonctions tunnel GaAsJournées Nationales du Photovoltaïque (JNPV 2017), Dec 2017, Dourdan, France. 1p., 2017 |
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Oxidation of AlGaAs circular mesas: experiments and modellingVCSEL days 2017, Jun 2017, Cardiff, United Kingdom. 2017 |
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Développement de briques technologiques pour la fabrication d’un VCSEL avec un modulateur intégré verticalement15eme Journees Nano, Micro et Optoelectronique (JNMO), May 2016, Les Issambres, France. 2016 |
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Fabrication, characterization and simulation of MBE-grown GaAs-based tunnel diodes with type I and type II heterojunctions for multijunction solar cells19th International Conference on Molecular Beam Epitaxy (MBE 2016), Sep 2016, Montpellier, France. 2p., 2016 |
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Fabrication, caractérisation et simulation d’hétérojonctions tunnel et d’un absorbeur à 1eV à base de semiconducteurs III-V pour les cellules solaires multijonctions à haut rendement15eme Journees Nano, Micro et Optoelectronique (JNMO), May 2016, Les Issambres, France. 2016 |
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Dynamique de recombinaison des porteurs dans des puits quantiques GaInAsN/GaAs.9èmes Journées de la Matière Condensée, Aug 2004, Nancy, France |
Licence Logiciel MonitoraloxFrance, Patent n° : 1. Rapport LAAS n° 18258. 2016 |
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Les lasers à cavité verticale infrarouge : d'une approche matériau à des géométries de composant innovantesPhysique Atomique [physics.atom-ph]. Université Paul Sabatier - Toulouse III, 2010 |
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Étude et réalisation de lasers à cavité verticale à 1,55 µm sur GaSbPhysique [physics]. Université Montpellier II - Sciences et Techniques du Languedoc, 1998. Français. ⟨NNT : ⟩ |
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Etude de photodétecteurs dans le proche infrarougeMicro et nanotechnologies/Microélectronique. 1995 |
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Caractérisation de microélectroaimantsMicro et nanotechnologies/Microélectronique. 1993 |