ambroise schellmanns
Présentation
to be continued
Publications
Publications
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Comparaison des performances des transistors SiC et GaN 650V pour des applications bidirectionnellesSymposium de Génie Électrique SGE 2025, cnrs, ups, Jul 2025, Toulouse, France |
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Modeling of carrier lifetime based on Deep-Level Transient Spectroscopy for power PIN diodes2022 IEEE International Conference on Electrical Sciences and Technologies in Maghreb (CISTEM), Oct 2022, Tunis, Tunisia. pp.1-6, ⟨10.1109/CISTEM55808.2022.10043947⟩ |
Simulated 1200V SiC-MOSFET short-circuit behavioricrepq2018, Mar 2018, Salamanca, Spain |
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Gummel-Poon modeling of a New Super-Gain BJT and an innovative 600V AC switchSymposium de Genie Electrique, Jun 2016, Grenoble, France |
BJT static behavior improvement by modification of the epitaxial layer27th International Conference on Microelectronics Proceedings (MIEL), 2010, May 2010, Nis, Serbia. pp.79-82 |
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BJT application expansion by insertion of superjunction22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2010, Jun 2010, Hiroshima, Japan. pp.157 - 160 |
Improvement of a bidirectional switch for electric networkIEEE International conference on communication, computer and power (ICCCP'09), Feb 2009, Muscat, Oman. pp.243-246 |
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Circuits équivalents pour transformateurs multienroulements : Application à la CEM conduite d'un convertisseurEnergie électrique. Institut National Polytechnique de Grenoble - INPG, 1999. Français. ⟨NNT : ⟩ |