Camille Sonneville
Présentation
Laboratoire ampère UMR5005 camille.sonneville@insa-lyon.fr De manière générale Camille Sonneville travaille sur la caractérisation spectroscopique et optiques des matériaux sous contraintes sévères : tension, température et pression...INSA Lyon - Laboratoire ampère
Campus de la Doua 69621 Villeurbanne cedexThèmes de recherches :
Enseignement :
Publications
Publications
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Raman and photoluminescence characterization of β-Ga2O3 for power electronic applicationWORKSHOP ON GALLIUM OXIDE AND RELATED MATERIALS, Sep 2025, Grenoble, France |
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Stress and doping analysis of low n-doped GaN layers grown on GaN, silicon and sapphire substrates by micro-Raman 2. Physics and characterizationICNS-15 - the 15th International Conference on Nitride Semiconductors, Jul 2025, Malmö, Sweden |
Probing Fermi Energy and Temperature-Dependent Shifts in Doped Homo-Epitaxial GaN Layers Using Micro-Raman SpectroscopyICNS-15 - the 15th International Conference on Nitride Semiconductors, Jul 2025, Malmö, Sweden |
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Mesures µ-OBIC sur diode bipolaire Diamant : une première !Symposium de Génie Electrique (SGE 2025), Jul 2025, Toulouse, France |
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Physical and electrical characterization of wide band gap for power electronic applicationSociété Française de Physique, Jun 2025, Troyes, France |
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Electrical characterization of HV (10 kV) Power 4H-SiC Bipolar Junction TransistorInternational Conference on Silicon Carbide and Related Materials (ICSCRM 2024), Sep 2024, Raleigh (North Carolina), United States. pp.126-128 |
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Peripheral defects related to processing technique in GaN-on-GaN vertical devicesWorkshop on Nitride Semiconductors IWN 2024, Nov 2024, O'ahu (Honolulu), United States |
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Carrier density analysis in stressed n-doped GaN layers on sapphireGaN Marathon, Jun 2024, Vérone, Italy |
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Impact of Substrate Quality on Vertical GaN-on-GaN Schottky and PiN Devicese-MRS Fall Meeting, Sep 2024, Varsovie (Warsaw), Poland |
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Matching physical and electrical measurements (OBIC) to simulation (FEM) on high voltage bipolar diodesInternational Conference on Silicon Carbide and Related Materials (ICSCRM 2024), Sep 2024, Raleigh (North Carolina), United States. pp.591-592 |
Vertical pin diodes on large freestanding (100) diamond film2023 EUROPEAN MATERIALS RESEARCH SOCIETY Spring Meeting, EUROPEAN MATERIALS RESEARCH SOCIETY, May 2023, Strasbourg, France |
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Visualization of P$^+$ JTE embedded rings used for peripheral protection of high voltage Schottky diodes by the Optical Beam Induced Current (OBIC) techniqueICSCRM 2023 - International Conference on Silicon Carbide and Related Materials, Sep 2023, Sorrente, Italy |
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Design and Characterization of an Optical 4H-SiC Bipolar Junction TransistorICSCRM 2023 - International Conference on Silicon Carbide and Related Materials, Sep 2023, Sorrente, Italy |
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Emerging trends in OBIC characterization technique for Wide Bandgap semiconductor devicesInternational Semiconductor Conference (CAS-2023), IMT Bucharest, Oct 2023, Sinaia, Romania. pp.3-10, ⟨10.1109/CAS59036.2023.10303647⟩ |
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Micro-Raman characterization of vertical GaN Schottky and PN diodes46th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe and 17th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (WOCSDICE-EXMATEC 2023), May 2023, Palerme, Italy |
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Multiphysics Characterizations of Vertical GaN Schottky Diodes2022 Compound Semiconductor Week (CSW), Jun 2022, Ann Arbor, United States. pp.1-2, ⟨10.1109/CSW55288.2022.9930447⟩ |
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Caractérisation par spectroscopie micro-Raman de diodes GaN SchottkyConférence Internationale Matériaux, Oct 2022, Lille, France |
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Influence of Fluorine implantation on the electrical characteristics of GaN-on-GaN vertical Schottky and P-N diodesE-MRS 2022, Sep 2022, Varsovie, Poland |
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Optimized Junction Termination Extension and Ring System for 11 kV 4H-SiC BJT2022 International Semiconductor Conference (CAS 2022), Oct 2022, Poiana Brasov, Romania. pp.191-194, ⟨10.1109/CAS56377.2022.9934390⟩ |
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Electrical behavior of vertical Schottky diodes on GaN homoepitaxyIWN 2022 - International Workshop on Nitride Semiconductors, Oct 2022, Berlin, Germany |
MULTIPHYSICS CHARACTERIZATIONS OF VERTICAL GaN SCHOTTKY DIODESPOWER 2021 (IMAPS), Nov 2021, Tours, France |
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Homo epitaxial n-doped GaN layers investigation using Raman Spectroscopy for Vertical device applicationsEXMATEC / WOCSDICE 2021 : 15th Expert Evaluation and Control of Compounds of Semiconductor Materials and Technologies, Jun 2021, Bristol, United Kingdom |
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Enhanced Resonant Raman scattering of GaN functional layers using Al thin films -a versatile tool for multilayer structure analysisECSCRM2020-2021, Oct 2021, Tours, France |
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Effects of the laser beam size on the Optical Beam Induced Current (OBIC) for the study of Wide Band Gap (WBG) Semi-Conductor DevicesWorkshop on Compound Semiconductor Devices and Integrated Circuits 2019 (WOCSDICE 2019), Jun 2019, Cabourg, France |
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Interest of using a micro-meter spatial resolution to study SiC semi-conductor devices by Optical Beam Induced Current (OBIC)International Conference on Silicon Carbide and Related Materials (ICSCRM) 2019, Sep 2019, Kyoto, Japan. pp.Mo-P-23 |
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Characterization of β-Ga2O3 and device fabricationSociété Française de Physique, Jun 2025, Troyes, France |
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Realization and characterization of vertical PIN diode on 100 diamond33rd International Conference on Diamond and Carbon Materials, Sep 2023, Palma, Spain. , 2023 |
Study of surface oxides modifications on nitinol electrodes during electroporation protocols and possible consequences4th World Congress on Electroporation, Oct 2022, Copenhagen, Denmark |
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Étude des propriétés élastiques des verres d’oxydes sous haute pression : implications structuralesScience des matériaux [cond-mat.mtrl-sci]. Université Claude Bernard - Lyon I; University of Toronto, 2013. Français. ⟨NNT : 2013LYO10114⟩ |