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Charles Cornet
312
Documents
Researcher identifiers
charles-cornet
-
0000-0002-1363-7401
- Google Scholar : https://scholar.google.fr/citations?user=6MVy6kAAAAAJ&hl=fr&oi=ao
- IdRef : 112108571
Presentation
### **Position**
Prof. Dr.,
Head of [FOTON-OHM](http://foton.cnrs.fr/v2016/spip.php?rubrique33) (Optoelectronics, Heteroepitaxy and Materials) research team (45 people)
### **Skills**
-Materials for Photonics and Energy / Photovoltaics and Solar Hydrogen
-III-V semiconductors and Silicon
-Physics of semiconductors: modeling of nanostructures, bandstructures, bandlineups
-Optical and structural properties of semiconductors compounds and devices
-Epitaxy and Ultra-High Vacuum crystal growth techniques
-Atomic Force Microscopy (AFM) and related near-field techniques
-Surface and volume diffraction (RHEED, XRD)
### **Research projects**
\*2021-2025: EU COST action: “European Network for Innovative and Advanced Epitaxy (OPERA)”: secondary proposer, Management committee member.
\*2021-2025: ANR PRC project “collaborative”: “PhysIcAl properties of hybrid semimetal/semicoNductor III-V/Si maTerials (PIANIST)”: coordinator, growth, simulation, optoelectronic properties.
\*2021-2025: ANR PRC project “collaborative”: “Nucleation and growth of III-V on Si explored in situ (NUAGES)”: local coordinator, growth, simulation.
\*2021-2025: PIA project Equipex NanoFutur: FOTON local scientific coordinator.
\*2021-2024: ANR PRC project “collaborative”: “Light COnveRsioN by photoinduced‐electrochemiluminescence (LICORN)”: contributor, growth.
\*2020-2023: ANR PRCE project “collaborative with a company”: “High-Efficiency Epitaxial CIGS-Silicon Tandem Solar Cell (EPCIS)”: contributor, growth.
\*2019-2022: ANR PRC project “collaborative”: “Improvement of photovoltaic Conversion Efficiency by acting on thermalization MecANisms (ICEMAN)”: contributor, growth.
\*2018-2021: ANR young researcher grant (projet jeune chercheur ANR): “secOnd oRder oPtical pHenomEna in galliUm phosphide microdisks on Silicon (ORPHEUS)”: contributor, growth and simulation.
\*2015-2018: ANR PRC project “collaborative”: “Advanced aNalysis of III-V/Si nucleaTIon for highly integrated PhOtonic Devices (ANTIPODE)”: coordinator, growth and simulation.
\*2014-2017: Labex Cominlabs project: “3D optical manycores”: contributor.
\*2012-2015: ANR “blanc” project: “Epitaxial integration of III-V optoelectronic devices on silicon (OPTOSI)”: project co-writer, contributor.
\*2012-2014: ANR young researcher grant (projet jeune chercheur ANR): “Silicon photonics with diluted nitride coherent integration (SINPHONIC)”: project main writer, coordinator, WP leader, contributor.
\*2011-2014: National (3) and international (1) beam time allocation at European Synchrotron Radiation Facility (ESRF) on CRG lines D2AM and BM-32.
\*2011-2014: ANR PROGELEC project: “Monolithic integration of high efficiency III-V solar cells on silicon (MENHIRS)”: project co-writer, contributor and member of the administrative and financial staff.
\*2011-2012: C’nano NANOTRANS project (C’nano Nord-ouest): “dilute nitride quantum dots: relationship between morphology, electronic structure and optical properties”: project co-writer, joint coordinator, contributor.
\*2004-2009: FP6 European network of excellence on Self-Assembled semiconductor Nanostructures for new Devices in photonics and Electronics (SANDiE): contributor.
\*2004-2008: FP6 European Network of Excellence on Photonic Integrated Components and Circuits (EPIXNET): contributor.
### **Awards**
\* Innovation award of the “pôle de compétitivité Images et Réseaux”, for the SINPHONIC ANR project (2013).
\* Young researcher award of “Région Bretagne” (2007)
\* Best Ph. D. prize of the SANDiE European network of excellence (2006)
### **Short CV**
- 2020-present: INSA, Rennes, France
Position : Professor at INSA Rennes, Institut FOTON (CNRS), head of the “[Optoelectronics, Heteroepitaxy and Materials (OHM) research group](http://foton.cnrs.fr/v2016/spip.php?rubrique33)”. Personal Research field: Growth, structural, electronic and optical properties of III-V/Si-based light emitters/absorbers on silicon for photonics and energy materials applications. Solar hydrogen production with photo-electrochemical cells.
- 2007-2020: INSA, Rennes, France
Position : “Maître de Conférences” (Ass. Prof., HDR), at FOTON CNRS Laboratory. Co-head of the “photonics on silicon” research program. Since 2017, head of the “[Optoelectronics, Heteroepitaxy and Materials (OHM) research group](http://foton.cnrs.fr/v2016/spip.php?rubrique33)”. Personal Research field: Growth, structural, electronic and optical properties of GaP-based light emitters/absorbers on silicon for photonics and energy materials applications.
- 2006–2007: INSA Rennes, France
Position: Post-doctoral fellow with teaching activities at FOTON CNRS Laboratory. Research topic: Growth and characterization of InAs/GaP quantum dots.
- 2003–2006: INSA, Rennes (France), TU Berlin (Germany) and KU Leuven (Belgium)
Position: Physics PhD Thesis on “electronic, optical and dynamic properties of self-organized and coupled quantum dots on InP substrate” at INSA-Rennes (France) in collaboration with TU Berlin, KU Leuven and TU Eindhoven within European network of excellence SANDIE.PhD Thesis supervised by Pr. J. Even. Research topic: Electronic, optical and dynamic properties of self-organized and coupled quantum dots on InP substrate.
- 2003: “Diplôme d’Etudes Approfondies” (DEA = MSc2 degree) of Physics: light and matter interaction, at University of Rennes 1,France. Highest distinction, ranked first.
Position: Master 2 training period at LENS laboratory (“Laboratoire d’Etude des Nanostructures à Semiconducteurs”). Research topic: Absorption measurements and simulations of InAs/InP (113)B quantum dots.
- 2001-2002: “Agrégation de Physique” passed at Ecole Normale Supérieure (ENS – Paris, France).
- 2001: Center for Quantum Electronics, Hanoi (Vietnam)
Position: Master 1 training period at CQE laboratory. Research topic: Time-resolved spectroscopy of tunable dye lasers
- …-2000: Paris-Sud University, Orsay (France)
“Licence”, “Maîtrise” and “Magistère” (BSc and MSc1 degrees) of fundamental physics at Paris-Sud University (Université Paris XI – Orsay, France)
Position: BSc training period at “Laboratory of the linear accelerator” (particle physics). Research topic: Analysis of DIRC performances in the frame of the Babar experiment
### **Teaching Activities**
\* Energetics and environment: from nuclear to renewable energies.
\* Applied quantum mechanics (quantum mechanic for beginners).
\* Thermodynamics.
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Molecular beam epitaxy of III-V semiconductors on group-IV (001) substrates: Formation and burying of antiphase domains.22nd International Conference on Molecular-Beam Epitaxy (ICMBE 2022), Sep 2022, Sheffield, United Kingdom
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Transport in photoelectrochemical heterojunctions: Interface-controlled physics13th Meeting on NanoScience Advances (MNA 2022), Sep 2022, Porquerolles, France
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hal-03841668v1
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Hétéro-épitaxie III-V/Si : contrôle des propriétés des surfaces et interfaces pour la photo-électrochimie35èmes Journées Surfaces et Interfaces, Jan 2022, Dijon (virtual), France
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Optical losses in GaP microdisks on Si with controlled random polarity17è Journées de la Matière Condensée (JMC 17), Aug 2021, Rennes (virtual), France
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hal-03402730v1
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CIGS growth on a GaP/Si(001) platform: towards CIGS/Si tandem solar cellsSPIE Photonics West - OPTO 2021, Mar 2021, Online Only, United States. pp.1168721, ⟨10.1117/12.2591986⟩
Conference papers
hal-03392186v1
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III-V/Si photoelectrodes with ambipolar properties5èmes Journées des Carburants Solaires, Sep 2021, Saint Jacut de la Mer, France
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Robust 2D semimetallic inclusions boost performances of III-V/Si heterostructures for water-splitting17è Journées de la Matière Condensée (JMC 17), Aug 2021, Rennes (virtual), France
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hal-03402743v1
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Anti-phase boundaries annihilation in the growth of GaSb on Silicon(001)21st International Conference on Molecular-Beam Epitaxy (IC-MBE 2021), Sep 2021, online, Mexico
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hal-03336876v1
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High-Quality Factor Zinc-Blende III-V Microdisks on Silicon for Nonlinear PhotonicsCompound Semiconductor Week 2021 (CSW 2021), May 2021, Stockholm, France
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Gallium phosphide transfer printing for integrated nonlinear photonicsConference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference 2021 (CLEO-Europe/EQEC 2021), Jun 2021, Munich, Germany. ⟨10.1109/CLEO/Europe-EQEC52157.2021.9541998⟩
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Is a substrate miscut really required for high quality III-V/Si monolithic integration?21st International Conference on Molecular Beam Epitaxy (ICMBE 2021), Sep 2021, Mexico (virtual), Mexico
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hal-03402689v1
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III-V/Si antiphase boundaries used as 2D-semimetallic topological vertical inclusions for solar hydrogen production21st International Conference on Molecular Beam Epitaxy (IC-MBE 2021), Sep 2021, Mexico (virtual), Mexico
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hal-03392254v1
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Hybrid ambipolar 2D semimetal/semiconductor III-V/Si heterostructures: Promises for photonics, energy harvesting and electronicsWebinar on Materials science, engineering and technology - VEBLEO, VEBLEO international organization, Dec 2021, virtual, India
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hal-03588366v1
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Dual wavelength coupler for second-harmonic generation in gallium phosphide microdisksInternational Conference Laser Optics (ICLO), Nov 2020, St-Petersburg, Russia
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Crystal-polarity engineered gallium phosphide microdisks grown on siliconIOP conference- PHOTON2020, Sep 2020, virtual, United Kingdom
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CIGS growth on a GaP/Si(001) platform : towards CIGS/Si tandem solar cellsSPIE Photonics West - OPTO 2020, Feb 2020, San Francisco, United States. pp.11275-4
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Random crystal polarity of Gallium phosphide microdisks on siliconJournées Nanomatériaux de Rennes, Jan 2020, Rennes, France
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hal-03101371v1
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Gallium phosphide on insulator photonics enabled by micro-transfer printingIntegrated Photonics Research, Silicon and Nanophotonics, 2020, Washington, United States. pp.ITu2A.6, ⟨10.1364/IPRSN.2020.ITu2A.6⟩
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GaPSb/Si tandem material with APBs for efficient overall water splittingJournées Nanomatériaux de Rennes, Jan 2020, Rennes, France
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III-V/Si photoelectrodes: a new route for solar hydrogen production11è Journées Scientifiques de Porquerolles (JSP2019), C'Nano-PACA, Sep 2019, Porquerolles, France
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THz surface phonon polariton generation in GaP photonic waveguide44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2019), Sep 2019, Paris, France. pp.19149231
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Mécanisme de croissance universel des III-V/SiConférence plennière GDR PULSE 2019, Jul 2019, Clermont-Ferrand, France
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A universal mechanism to describe III-V epitaxy on Si20th European Molecular Beam Epitaxy Workshop (Euro-MBE 2019), Feb 2019, Lenggries, Germany
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Monolithic integration of III-V semiconductors on silicon for photonics and solar hydrogen productionSPb Photonic, Optoelectronic, & Electronic Materials (SPb-POEM 2019), Apr 2019, St Petersburg, Russia
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GaPSb/Si photoelectrode for Solar Fuel ProductionEuropean COST multsicaleSolar Final meeting, Apr 2019, Sofia, Bulgaria
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hal-03102622v1
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Universal growth mechanism of III-V/Si: using antiphase boundaries for devices.Réunion plénière du GDR Pulse (PULSE 2019), Jul 2019, Clermont-Ferrand, France
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CIGS Growth on a III-V/Si(001) Platform: Towards CIGS/Si Tandem Solar Cells36th European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC 2019), Sep 2019, Marseille, France. pp.769
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Solar Water Splitting: surface energy engineering of GaP Template on SiEuropean Materials Research Society - Spring Meeting 2019 (E-MRS 2019 Spring Meeting), Apr 2019, Phoenix, United States
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A general III-V/Si growth process descriptionEuropean Materials Research Society - Spring Meeting 2018 (E-MRS 2018 Spring Meeting), Jun 2018, Strasbourg, France
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III-V/Si heterogeneous growth : thermodynamics and antiphase domains formation34th International Conference on the Physics of Semiconductors (ICPS 2018), Jul 2018, Montpellier, France
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GaP-based materials on silicon for photonics and energySmart NanoMaterials 2018: Advances, Innovation and Applications (SNAIA2018), Dec 2018, Paris, France
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La préparation du silicium pour l’hétéro-épitaxieAtelier GDR 2018 sur la préparation des substrats pour l'épitaxie, IEMN 2018, May 2018, Villeneuve d'Ascq, France
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Nano Beam X-ray Scattering on GaP/Si for III-V Monolithic Integration on SiliconEuropean Materials Research Society - Spring Meeting 2018 (E-MRS 2018 Spring Meeting), Jun 2018, Strasbourg, France
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Large scale textured GaP(114) growth on vicinal Si substrate by Molecular Beam Epitaxy for water splitting applications20th International Conference on Molecular-Beam Epitaxy (ICMBE 2018), Sep 2018, Shanghai, China. pp.Tu-P-43(S)
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La préparation du silicium pour l’hétéroépitaxieConférence GDR PULSE sur la préparation des substrats pour l'épitaxie 2018, May 2018, Lille, France
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hal-03408428v1
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GaP Template on Si for Solar Water Splitting: surface energy engineeringnanoGe Fall Meeting 2018 (NGFM18), Oct 2018, Torremolinos, Spain
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hal-01909068v1
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A universal mechanism to describe the III-V on Si growth by Molecular Beam Epitaxy20th International Conference on Molecular-Beam Epitaxy (ICMBE 2018), Sep 2018, Shanghai, China. pp.Th-C1-3(S)
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hal-01910554v1
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(114) GaP surface texturation on Si for water splittingEMRS Spring meeting 2018, Jun 2018, Strasbourg, France
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hal-01708047v1
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Opportunities and Obstacles of Monolithic III-V Integration on SiliconDesign, Automation & Test in Europe conference (DATE 2017) - 3rd International Workshop on Optical/Photonic Interconnects for Computing Systems (OPTICS Workshop), Mar 2017, Lausanne, Switzerland
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III-V/Si 3D crystal growth: a thermodynamic descriptionEnergy Materials Nanotechnology Meeting 2017 / Collaborative Conference on Crystal Growth (EMN 3CG 2017), Aug 2017, Berlin, Germany
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Optical properties of GaP/Si active microdisks containing InGaAs/GaP quantum dotsNanophotonics and Micro/Nano Optics International Conference 2017 (NANOP 2017), Prem C, Sep 2017, Barcelona, Spain
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GaP/Si(001) polar-on-nonpolar epitaxial growth revisited by scanning tunneling microscopy16th International Conference on the Formation of Semiconductor Interfaces (ICFSI-16), Jul 2017, Hannover, Germany
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hal-01715971v1
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GaP/Si(001) polar-on-nonpolar epitaxial growth revisited by scanning tunneling microscopy.Réunion plénière du GDR Pulse (PULSE 2017), Oct 2017, Paris, France
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Dielectric properties of hybrid perovskites and drift-diffusion modelling of perovskite/silicon tandem cellsSPIE Photonics West - OPTO 2016, Feb 2016, San Francisco, United States. pp.9743-21
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Laser integration challenges for on-chip optical interconnectsOPTICS 2016 workshop, Mar 2016, Dresden, Germany
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Advanced concepts of photovoltaics based on III-V compounds16th International Conference of Physical Chemistry (ROMPHYSCHEM-16), Sep 2016, Galaţi, Romania
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hal-01496667v1
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Impact of crystal antiphase boundaries on second harmonic generation in GaP microdisksEuropean Materials Research Society - Spring Meeting 2016 (E-MRS 2016 Spring Meeting), May 2016, Lille, France
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First stage results on III-V/Si tandem cells using GaAsPN dilute-nitrideEuropean Materials Research Society - Spring Meeting 2016 (E-MRS 2016 Spring Meeting), May 2016, Lille, France
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hal-01496924v1
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3D GaP/Si(001) growth mode and antiphase boundaries19th International Conference on Molecular-Beam Epitaxy (IC-MBE 2016), Sep 2016, Montpellier, France
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hal-01497144v1
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Etude de la croissance cohérente de GaP/Si(001) en couche minceRéunion plénière du GDR Pulse (PULSE 2016), Jul 2016, Marseille, France
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hal-01497149v1
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Tailoring second-order harmonic generation with crystal antiphase domains in GaP/Si19th International Conference on Molecular-Beam Epitaxy (IC-MBE 2016), Sep 2016, Montpellier, France
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hal-01496763v1
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Role of marker layers on antiphase domains in GaP/Si heterostructuresExtended Defects in Semiconductors (EDS 2016), Sep 2016, Les Issambres, France
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hal-01496758v1
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Quantitative evaluation of microtwins and antiphase defects towards a GaP/Si platform for monolithic integrated photonicsEuropean Materials Research Society - Spring Meeting 2015 (E-MRS 2015 Spring Meeting), May 2015, Lille, France
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GaAsPN-based PIN solar cells MBE-grown on GaP substrates: toward the III-V/Si tandem solar cellSPIE Photonics West - OPTO 2015, Feb 2015, San Francisco, United States. pp.93580H, ⟨10.1117/12.2081376⟩
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Investigation des propriétés optiques des microdisques de phosphure de gallium14ème Colloque international francophone sur les Méthodes et Techniques Optiques pour l'Industrie / 16ème congrès français du club FLUVISU/SFO (CMOI-FLUVISU 2015), Nov 2015, Lannion, France. pp.184-189
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Electronic band structure and optical properties of GaNxPyAs1-x-y with y≥0.6 studied by electro-modulation spectroscopy and photoluminescenceCompound semiconductor week 2015, Jun 2015, Santa-Barbara, United States
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hal-01147488v1
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Investigation of the optical properties of GaP microdisks for optical functions integrated on siliconCompound Semiconductor Week 2015 (CSW 2015), Jun 2015, Santa-Barbara, United States
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Electroluminescence of InGaAs/GaP quantum dots and band engineering of AlGaP/GaP laser injection layersCompound Semiconductor Week 2015 (CSW 2015), Jun 2015, Santa-Barbara, United States
Conference papers
hal-01147506v1
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Structural, electronic properties and carrier dynamics in InGaAs(N)/GaP quantum dots18th European Molecular Beam Epitaxy Workshop (Euro-MBE 2015), Mar 2015, Canazei, Italy
Conference papers
hal-01147481v1
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Analyse quantitative des antiphases dans des nanocouches épitaxiales GaP/Si pour la photonique sur siliciumRayons X & Matière 2015, Dec 2015, Grenoble, France
Conference papers
hal-01497228v1
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Toward the III-V/Si high efficiency tandem solar cell7th International Workshop on "Advanced optical and X-ray characterization techniques of multifunctional materials for information and communication technologies, health and renewable energy applications", Sep 2015, Bucarest, Romania
Conference papers
hal-01497190v1
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Investigation des propriétés optiques des micro-disques de GaP pour l’intégration de fonctions optiques sur siliciumOptique Bretagne 2015 - 35ème Journées Nationales d'Optique Guidée (JNOG'35), Jul 2015, Rennes, France. pp.133-135
Conference papers
hal-01497234v1
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Monolithic integration of GaAsPN dilute-nitride compounds on silicon substrates: toward the III-V/Si tandem solar cellSPIE Photonics West - OPTO 2015, Feb 2015, San Francisco, United States
Conference papers
hal-01497194v1
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MBE-grown GaP/Si micro-disks18th European Molecular Beam Epitaxy Workshop (Euro-MBE 2015), Mar 2015, Canazei, Italy
Conference papers
hal-01147473v1
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(In)GaP integration on Si for photonics and energyEuropean Materials Research Society - Fall Meeting 2015 (E-MRS 2015 Fall Meeting), Sep 2015, Warsaw, Poland
Conference papers
hal-01497184v1
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Towards the III-V/Si CPV on Si substratesEuropean Materials Research Society - Spring Meeting 2015 (E-MRS 2015 Spring Meeting), May 2015, Lille, France
Conference papers
hal-01403375v1
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Numerical and experimental ongoing on III-V/Si high-efficiency tandem solar cellEuropean Congress and Exhibition on Advanced Materials and Processes (EUROMAT 2015), Sep 2015, Warsaw, Poland
Conference papers
hal-01203374v1
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Advanced concepts of III-V-based Solar Cells heterostructures: towards III-V/Si CPV on Si substrates and hot-carrier solar cells on InP substratesEuropean Materials Research Society 2014 Sptring Meeting (E-MRS 2014), May 2014, Lille, France
Conference papers
hal-01115019v1
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Intégration pseudomorphique dans la filière GaP/Si pour les applications lasers sur pucejournées thématiques du GDR Ondes GT2, Nov 2014, Orsay, France
Conference papers
hal-01114901v1
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Composition dependent nature of the fundamental optical transition in (In,Ga)As/GaP quantum dots26th International Conference on Indium Phosphide and Related Materials (IPRM 2014), May 2014, Montpellier, France. pp.Th-B1-2, ⟨10.1109/ICIPRM.2014.6880555⟩
Conference papers
hal-01114877v1
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Low cristalline defect density in GaP/Si nanolayersEuropean Materials Research Society 2014 Sptring Meeting (E-MRS 2014), May 2014, Lille, France
Conference papers
hal-01115024v1
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Using high pressure to unravel the nature of optical transitions in (In,Ga)As/GaP quantum dots16th High Pressure in Semiconductor Physics conference (HPSP-16), Aug 2014, Mexico, Mexico
Conference papers
hal-01114998v1
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Epitaxie cohérente de composés GaP et GaAsPN à azote dilué sur substrats de Si pour l’élaboration de cellules PV tandem III-V/SiMatériaux 2014, Nov 2014, Montpellier, France
Conference papers
hal-01115312v1
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Thorough structural and optical analyses of GaP-based heterostructures monolithically grown on silicon substrates for photonics on Si applications: toward the laser on silicon and high efficiency photovoltaics on silicon6th International Workshop on "Advanced optical and X-ray characterization techniques of multifunctional materials for information and communication technologies, health and renewable energy applications", Sep 2014, Bucharest, Romania
Conference papers
hal-01114912v1
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Analyse quantitative par diffraction des rayons X des défauts plans dans GaP/SI pour la photonique sur SiRéunion plénière du GDR Pulse (PULSE 2014), Oct 2014, Toulouse, France
Conference papers
hal-01137337v1
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Quantitative evaluation of microtwins and antiphase defects in GaP/Si nanolayers for III-V photonics platform on silicon12th Biennal Conference on High-Resolution X-Ray Diffraction and Imaging, Sep 2014, Villard de Lans, France
Conference papers
hal-01115004v1
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Abrupt heterointerface and low defect density in GaP/Si nanolayersCompound Semiconductor Week 2014, May 2014, Montpellier, France
Conference papers
hal-01115278v1
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UHVCVD-MBE growth for tandem solar cells4th PhotoVoltaic Technical Conference (PVTC 2013), May 2013, Aix-en-Provence, France
Conference papers
hal-00918732v1
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Crystalline defects in GaP layers grown on Si (001)euro-MBE conference 2013, Mar 2013, Levi, Finland
Conference papers
hal-00918665v1
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Raccordements de bandes et profils de constantes diélectriques pour des hétérostructures 2D à semiconducteursGDR co-DFT, May 2013, guidel, France
Conference papers
hal-00827732v1
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Boîtes quantiques semi-conductrices : relation entre morphologie, structure électronique et propriétés optiquesJournées Nanosciences et Nanotechnologies du Nord Ouest 2013 (J2NO 2013), Nov 2013, Rennes, France
Conference papers
hal-00918787v1
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Ab initio investigation of defect nucleation at III-V/Si heterointerface for tandem solar cells applicationsEuropean Materials Research Society meeting E-MRS 2013, May 2013, Strasbourg, France
Conference papers
hal-00918729v1
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Origin and observations of extended defects in III-V epilayers on SiInternational Workshop "Silicon & Photonics", Jun 2013, Rennes, France
Conference papers
hal-00918738v1
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Optimisation des propriétés structurale de l'interface GaP/Si et des propriétés électroniques de cellules solaires GaAsPN/GaP pour la fabrication de cellule tandemJournées nationales du Photovoltaïque JNPV 2013, Dec 2013, Dourdan, France
Conference papers
hal-00918758v1
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Investigation of GaAsPN Material towards III-V/Si Solar Cells”, session “New Materials and Concepts for Cells28th European Photovoltaic Solar Energy Conference (EU PVSEC 2013), Sep 2013, Paris, France
Conference papers
hal-01166803v1
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Toward a III-V/Si tandem solar cell : characterization and modelingEuropean materials research Society meeting E-MRS 2013, May 2013, Strasbourg, France
Conference papers
hal-00918728v1
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New concept of photovoltaic heterostructure GaP/c-Si : AFORS-HET simulation and first pseudomorphic approachJournées nationales du Photovoltaïque JNPV 2013, Dec 2013, Dourdan, France
Conference papers
hal-00918767v1
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Tight binding simulations in III-V structures on SiInternational Workshop "Silicon & Photonics", Jun 2013, Rennes, France
Conference papers
hal-00918742v1
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Design of a lattice-matched III-V-N/Si photovoltaic tandem cell monolithically integrated on silicon substrate13th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2013), Aug 2013, Vancouver, Canada. pp.1397-1403, ⟨10.1007/s11082-014-9909-z⟩
Conference papers
hal-00951949v1
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Etude par TEM et DRX des défauts cristallins dans des couches épitaxiées par MBE de GaP sur Silicium (001)Réunion plénière du GDR Pulse (PULSE 2013), Jul 2013, Aix-en-Provence, France
Conference papers
hal-00918748v1
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UHVCVD-MBE growth cluster for III-N-V/Si solar cellsCompound semiconductors week, ISCS, 2013, May 2013, Kobe, Japan
Conference papers
hal-00918735v1
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Monolithic integration of diluted-nitride III-V-N compounds on silicon substrates : toward the III-V/Si Concentrated PhotovoltaicsInternational Symposium on Inorganic and Environmental Materials, Oct 2013, Rennes, France
Conference papers
hal-00918754v1
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gamma-X competition for the optical transition of (In,Ga)As(N)/GaP quantum dots (QDs)European Materials research society meeting EMRS 2013, May 2013, Strasbourg, France
Conference papers
hal-00918730v1
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Growth of GaP on biatomic Si steps using a UHVCVD-MBE clustereuro-MBE conference, Mar 2013, Levi, Finland
Conference papers
hal-00918666v1
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HR-TEM study of GaN-GaP type II interfaces18th Microscopy of Semiconducting Materials MSMXVIII, Apr 2013, Oxford, United Kingdom
Conference papers
hal-00918664v1
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Advanced X-ray analyses on epitaxially-grown thin films for optoelectronic applications15th International Conference of Physical Chemistry - ROMPHYSCHEM-15, Sep 2013, Bucharest, Romania
Conference papers
hal-00918793v1
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Nature of the optical transition in (In,Ga)As(N)/GaP quantum dots (QDs): effect of QD size, indium composition and nitrogen incorporationCompound semiconductors week, IPRM, 2013, May 2013, Kobe, Japan
Conference papers
hal-00918734v1
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