Charles Cornet
Présentation
Domaines de recherche
Compétences
Publications
Publications
Second harmonic generation in polycrystalline Zinc Sulfide nanowaveguidesIntegrated Photonics Research, Silicon and Nanophotonics, 2025, Marseille, France. pp.ITu2A.3, ⟨10.1364/IPRSN.2025.ITu2A.3⟩ |
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Transverse orientation patterned gallium phosphide waveguidesIntegrated Photonics Research, Silicon and Nanophotonics, 2025, Marseille, France. pp.ITu1B.3, ⟨10.1364/IPRSN.2025.ITu1B.3⟩ |
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Predictions of Wulff-Kaischew equilibrium shapes during heteroepitaxial Growth of III-V on Si: DFT and in-situ ExperimentsAPS Global Physics Summit 2025, American Physical Society (APS), Mar 2025, Anaheim, California, United States |
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Reducing defect density in the epitaxy of III-Vs on Silicon substratesICG2025, Jan 2025, LECCE, Italy |
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Low losses optical devices on GaP/GaAs platformOptica Advanced Photonics Congress 2025, Jul 2025, Marseille, France. ⟨10.1364/iprsn.2025.iw3a.4⟩ |
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III-V/Si Heteroepitaxy: Understanding and Mastering Growth Fundamentals24th American Conference on Crystal Growth and Epitaxy (ACCGE-24), Jul 2025, Stevenson, United States |
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Dispositifs à base de Phosphure de Gallium pour l'optique non-linéaire intégréeJournées Nationales de l'Optique Guidée 2025, Jul 2025, Sète, France |
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Transverse Orientation Patterned Gallium Phosphide waveguides for high efficiency second harmonic generationCLEO®/Europe-EQEC 2025, Jun 2025, Munich, Germany |
Theoretical insights into heteroepitaxial growth: Predicting equilibrium crystal shapesGDR MatEpi, CNRS, Nov 2025, Institut d'Electronique de Microélectronique et de Nanotechnologie (IEMN) in Villeneuve-d'Ascq, France |
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Propriétés optoélectroniques et structure des matériaux aux échelles nanométriquesécole C’Nano, Jun 2025, Erquy, France |
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Cost-effective solar water splitting with III-V/Si epitaxial photoelectrodesEuropean Conference on Innovative and Advanced Epitaxy, May 2025, Pise, Italy |
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STRUCTURE ATOMIQUE DES PAROIS D’INVERSION DANS LES COUCHES DE SEMICONDUCTEURS III-V EPITAXIEES SUR SUBSTRAT SILICIUM (100)19ème colloque de la Société française des Microscopies, Jun 2025, Toulouse, France |
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Revisiting the epitaxy of III-Vs on group-IV substratesThe 23rd International Conference on Molecular Beam Epitaxy (ICMBE 2024), Sep 2024, Matsue, Japan |
Production d’hydrogène solaire par photo-électrolyse2ème Journée bretonne Hydrogène R&D – formation, May 2024, Saint-Malo, France |
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The direct epitaxial growth of III-Vs on Silicon substrateJournées Nano, Micro et Optoélectronique (JNMO 2024), Oct 2024, Sete, France |
Stability of monodomain III-V crystals over a Si monoatomic step including the formation of antiphase boundariesEMRS spring meeting 2024, May 2024, Strasbourg, France |
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Gallium Phosphide Platforms for Integrated PhotonicsOptica Advanced Photonics Congress, Jul 2024, Québec (CA), Canada |
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Characterization of zinc sulfide waveguides for nonlinear photonicsIntegrated Photonic Research, Optica, Jul 2024, Quebec (Canada), Canada |
Understanding III-V/Si Heteroepitaxy: Experiments and Theory8th European conference on crystal growth, Jul 2024, Warsaw, Poland |
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Photo-electrochemistry with III-V/Si semiconductors for cost-efficient solar water splittingJournées Nano, Micro et Optoélectronique (JNMO) - 2024, Oct 2024, Sete, France |
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Solar Hydrogen productionPEPR H2 training school, Oct 2024, La Grande Motte, France |
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Massive onset potential shifting with an epitaxial GaAs/Si photocathode for solar H2 production245th Electrochemical Society (ECS) meeting, May 2024, San Fransisco, United States. ⟨10.1149/MA2024-01442458mtgabs⟩ |
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GaP WGM microdisks for second order nonlinear optics2024 24th International Conference on Transparent Optical Networks (ICTON), Jul 2024, Bari, Italy. pp.1-1, ⟨10.1109/icton62926.2024.10647803⟩ |
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Characterization of polycrystalline zinc sulfide waveguides for nonlinear photonicInternational Confererence on the Physics of Semiconductors, Jul 2024, Ottawa (Ontario), Canada |
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Gallium Phosphide Platforms for Integrated Photonics36th International Conference on the Physics of Semiconductors (ICPS 2024), Jul 2024, Ottawa, Canada. ⟨10.1364/IPRSN.2024.ITh2B.3⟩ |
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Linear and Nonlinear Characterization of Vertical Orientation-Patterned Gallium Phosphide Waveguides for Second Harmonic GenerationIntegrated Photonics Research, Silicon and Nanophotonics (IPR), Optica, Jul 2024, Québec, Canada. ⟨10.1364/IPRSN.2024.ITh2B.4⟩ |
Technologies alternatives de production AEM et PECPEPR H2 days, Mar 2024, Grenoble, France |
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III-V/Si epitaxial growth and antiphase domains: a matter of symmetryOSEPI : Epitaxie des oxydes et des semiconducteurs, GDR MATEPI, May 2024, Fréjus, France |
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Wetting properties of heteroepitaxial systems determined from surface and interface energies calculations“Fundamental research – New materials” COST 2023 workshop, Apr 2023, Madrid, France |
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Optical characterizations of epitaxial materials: from crystal defects to optoelectronic properties2nd OPERA training school “Characterization techniques for epitaxial materials", Jun 2023, Aveiro, Portugal |
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Origine du twist entre les îlots de croissance de semi-conducteurs tétra-coordonnés hétéroépitaxiés selon des directions hexagonales.Conférence MATEPI 2023, Jul 2023, Paris, France |
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Influence of the initial phase distribution on antiphase domains control and burying in MBE growth of III-Vs on "on-axis" SiEuropean Workshop on Molecular Beam Epitaxy (EuroMBE 2023), Apr 2023, Madrid, Spain |
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EQUIPEX NANOFUTUR : IMPLANTATION D'UN CLUSTER DE CROISSANCE POUR LES MATÉRIAUX ET COMPOSANTS III-V EPITAXIES A L'INSTITUT FOTONMATEPI 2023, Jul 2023, Paris, France |
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Tunable bandgap III-V alloys on a low-cost Si substrate for solar-assisted water splittingInternational Workshop on Emerging Solar Energy Materials and Applications (ESEMA 2022), May 2022, Porquerolles, France |
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Hétéro-épitaxie III-V/Si : contrôle des propriétés des surfaces et interfaces pour la photo-électrochimie35èmes Journées Surfaces et Interfaces, Jan 2022, Dijon (virtual), France |
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Transport in photoelectrochemical heterojunctions: Interface-controlled physics13th Meeting on NanoScience Advances (MNA 2022), Sep 2022, Porquerolles, France |
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Towards high-efficiency and low cost epitaxial CIGSu/Si tandem solar cellsSPIE Photonics West conference, Feb 2022, San Francisco CA, United States |
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Epitaxial growth of Cu(In,Ga)S2 thin films on GaP/Si(001) pseudo-substrate: towards Cu(In,Ga)S2/Si tandem solar cells12è Journées Nationales du PhotoVoltaïque (JNPV 2022), Nov 2022, Dourdan, France |
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EMRS-Fall meeting 2022 symposium H on Innovative and Advanced Epitaxy: Introducing talkEuropean Materials Research Society - Fall Meeting 2022 (E-MRS 2022 Fall Meeting), European Materials Research Society, Sep 2022, Warsaw, Poland |
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ANR EPCIS: first results on High-Efficiency Epitaxial CIGSu on Silicon Tandem Solar Cell12è Journées Nationales du PhotoVoltaïque (JNPV 2022), Nov 2022, Dourdan, France |
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MBE-grown GaAs on a low-cost Si substrate for solar hydrogen productionEMRS Fall Meeting 2022, European Materials Research Society, Sep 2022, Warsaw, Poland |
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Molecular beam epitaxy of III-V semiconductors on group-IV (001) substrates: Formation and burying of antiphase domains.22nd International Conference on Molecular-Beam Epitaxy (ICMBE 2022), Sep 2022, Sheffield, United Kingdom |
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Theoretical insight into absolute surface and interface energies, and optoelectronic properties of 2D vertical singularities for III-V/Si heterostructure applicationsInternational Materials Research Society (MRS) Fall-meeting and exhibit, Nov 2021, Boston, United States |
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Hybrid ambipolar 2D semimetal/semiconductor III-V/Si heterostructures: Promises for photonics, energy harvesting and electronicsWebinar on Materials science, engineering and technology - VEBLEO, VEBLEO international organization, Dec 2021, virtual, India |
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III-V/Si antiphase boundaries used as 2D-semimetallic topological vertical inclusions for solar hydrogen production21st International Conference on Molecular Beam Epitaxy (IC-MBE 2021), Sep 2021, Mexico (virtual), Mexico |
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III-V/Si photoelectrodes with ambipolar properties5èmes Journées des Carburants Solaires, Sep 2021, Saint Jacut de la Mer, France |
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Robust 2D semimetallic inclusions boost performances of III-V/Si heterostructures for water-splitting17è Journées de la Matière Condensée (JMC 17), Aug 2021, Rennes (virtual), France |
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CIGS growth on a GaP/Si(001) platform: towards CIGS/Si tandem solar cellsSPIE Photonics West - OPTO 2021, Mar 2021, Online Only, United States. pp.1168721, ⟨10.1117/12.2591986⟩ |
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Optical losses in GaP microdisks on Si with controlled random polarity17è Journées de la Matière Condensée (JMC 17), Aug 2021, Rennes (virtual), France |
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Anti-phase boundaries annihilation in the growth of GaSb on Silicon(001)21st International Conference on Molecular-Beam Epitaxy (IC-MBE 2021), Sep 2021, online, Mexico |
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Gallium phosphide transfer printing for integrated nonlinear photonicsConference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference 2021 (CLEO-Europe/EQEC 2021), Jun 2021, Munich, Germany. ⟨10.1109/CLEO/Europe-EQEC52157.2021.9541998⟩ |
Is a substrate miscut really required for high quality III-V/Si monolithic integration?21st International Conference on Molecular Beam Epitaxy (ICMBE 2021), Sep 2021, Mexico (virtual), Mexico |
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High-Quality Factor Zinc-Blende III-V Microdisks on Silicon for Nonlinear PhotonicsCompound Semiconductor Week 2021 (CSW 2021), May 2021, Stockholm, France |
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Gallium phosphide on insulator photonics enabled by micro-transfer printingIntegrated Photonics Research, Silicon and Nanophotonics, 2020, Washington, United States. pp.ITu2A.6, ⟨10.1364/IPRSN.2020.ITu2A.6⟩ |
Dual wavelength coupler for second-harmonic generation in gallium phosphide microdisksInternational Conference Laser Optics (ICLO), Nov 2020, St-Petersburg, Russia |
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Random crystal polarity of Gallium phosphide microdisks on siliconJournées Nanomatériaux de Rennes, Jan 2020, Rennes, France |
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Crystal-polarity engineered gallium phosphide microdisks grown on siliconIOP conference- PHOTON2020, Sep 2020, virtual, United Kingdom |
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CIGS growth on a GaP/Si(001) platform : towards CIGS/Si tandem solar cellsSPIE Photonics West - OPTO 2020, Feb 2020, San Francisco, United States. pp.11275-4 |
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GaPSb/Si tandem material with APBs for efficient overall water splittingJournées Nanomatériaux de Rennes, Jan 2020, Rennes, France |
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Universal growth mechanism of III-V/Si: using antiphase boundaries for devices.Réunion plénière du GDR Pulse (PULSE 2019), Jul 2019, Clermont-Ferrand, France |
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III-V/Si photoelectrodes: a new route for solar hydrogen production11è Journées Scientifiques de Porquerolles (JSP2019), C'Nano-PACA, Sep 2019, Porquerolles, France |
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THz surface phonon polariton generation in GaP photonic waveguide44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2019), Sep 2019, Paris, France. pp.19149231 |
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A universal mechanism to describe III-V epitaxy on Si20th European Molecular Beam Epitaxy Workshop (Euro-MBE 2019), Feb 2019, Lenggries, Germany |
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Mécanisme de croissance universel des III-V/SiConférence plennière GDR PULSE 2019, Jul 2019, Clermont-Ferrand, France |
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Monolithic integration of III-V semiconductors on silicon for photonics and solar hydrogen productionSPb Photonic, Optoelectronic, & Electronic Materials (SPb-POEM 2019), Apr 2019, St Petersburg, Russia |
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GaPSb/Si photoelectrode for Solar Fuel ProductionEuropean COST multsicaleSolar Final meeting, Apr 2019, Sofia, Bulgaria |
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CIGS Growth on a III-V/Si(001) Platform: Towards CIGS/Si Tandem Solar Cells36th European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC 2019), Sep 2019, Marseille, France. pp.769 |
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Solar Water Splitting: surface energy engineering of GaP Template on SiEuropean Materials Research Society - Spring Meeting 2019 (E-MRS 2019 Spring Meeting), Apr 2019, Phoenix, United States |
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GaP Template on Si for Solar Water Splitting: surface energy engineeringnanoGe Fall Meeting 2018 (NGFM18), Oct 2018, Torremolinos, Spain |
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A universal mechanism to describe the III-V on Si growth by Molecular Beam Epitaxy20th International Conference on Molecular-Beam Epitaxy (ICMBE 2018), Sep 2018, Shanghai, China. pp.Th-C1-3(S) |
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La préparation du silicium pour l’hétéroépitaxieConférence GDR PULSE sur la préparation des substrats pour l'épitaxie 2018, May 2018, Lille, France |
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(114) GaP surface texturation on Si for water splittingEMRS Spring meeting 2018, Jun 2018, Strasbourg, France |
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GaP-based materials on silicon for photonics and energySmart NanoMaterials 2018: Advances, Innovation and Applications (SNAIA2018), Dec 2018, Paris, France |
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III-V/Si heterogeneous growth : thermodynamics and antiphase domains formation34th International Conference on the Physics of Semiconductors (ICPS 2018), Jul 2018, Montpellier, France |
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A general III-V/Si growth process descriptionEuropean Materials Research Society - Spring Meeting 2018 (E-MRS 2018 Spring Meeting), Jun 2018, Strasbourg, France |
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Nano Beam X-ray Scattering on GaP/Si for III-V Monolithic Integration on SiliconEuropean Materials Research Society - Spring Meeting 2018 (E-MRS 2018 Spring Meeting), Jun 2018, Strasbourg, France |
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Large scale textured GaP(114) growth on vicinal Si substrate by Molecular Beam Epitaxy for water splitting applications20th International Conference on Molecular-Beam Epitaxy (ICMBE 2018), Sep 2018, Shanghai, China. pp.Tu-P-43(S) |
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La préparation du silicium pour l’hétéro-épitaxieAtelier GDR 2018 sur la préparation des substrats pour l'épitaxie, IEMN 2018, May 2018, Villeneuve d'Ascq, France |
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Opportunities and Obstacles of Monolithic III-V Integration on SiliconDesign, Automation & Test in Europe conference (DATE 2017) - 3rd International Workshop on Optical/Photonic Interconnects for Computing Systems (OPTICS Workshop), Mar 2017, Lausanne, Switzerland |
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GaP/Si(001) polar-on-nonpolar epitaxial growth revisited by scanning tunneling microscopy.Réunion plénière du GDR Pulse (PULSE 2017), Oct 2017, Paris, France |
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GaP/Si(001) polar-on-nonpolar epitaxial growth revisited by scanning tunneling microscopy16th International Conference on the Formation of Semiconductor Interfaces (ICFSI-16), Jul 2017, Hannover, Germany |
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III-V/Si 3D crystal growth: a thermodynamic descriptionEnergy Materials Nanotechnology Meeting 2017 / Collaborative Conference on Crystal Growth (EMN 3CG 2017), Aug 2017, Berlin, Germany |
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Optical properties of GaP/Si active microdisks containing InGaAs/GaP quantum dotsNanophotonics and Micro/Nano Optics International Conference 2017 (NANOP 2017), Prem C, Sep 2017, Barcelona, Spain |
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First stage results on III-V/Si tandem cells using GaAsPN dilute-nitrideEuropean Materials Research Society - Spring Meeting 2016 (E-MRS 2016 Spring Meeting), May 2016, Lille, France |
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Impact of crystal antiphase boundaries on second harmonic generation in GaP microdisksEuropean Materials Research Society - Spring Meeting 2016 (E-MRS 2016 Spring Meeting), May 2016, Lille, France |
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Role of marker layers on antiphase domains in GaP/Si heterostructuresExtended Defects in Semiconductors (EDS 2016), Sep 2016, Les Issambres, France |
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Tailoring second-order harmonic generation with crystal antiphase domains in GaP/Si19th International Conference on Molecular-Beam Epitaxy (IC-MBE 2016), Sep 2016, Montpellier, France |
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Advanced concepts of photovoltaics based on III-V compounds16th International Conference of Physical Chemistry (ROMPHYSCHEM-16), Sep 2016, Galaţi, Romania |
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Laser integration challenges for on-chip optical interconnectsOPTICS 2016 workshop, Mar 2016, Dresden, Germany |
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Dielectric properties of hybrid perovskites and drift-diffusion modelling of perovskite/silicon tandem cellsSPIE Photonics West - OPTO 2016, Feb 2016, San Francisco, United States. pp.9743-21 |
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3D GaP/Si(001) growth mode and antiphase boundaries19th International Conference on Molecular-Beam Epitaxy (IC-MBE 2016), Sep 2016, Montpellier, France |
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Etude de la croissance cohérente de GaP/Si(001) en couche minceRéunion plénière du GDR Pulse (PULSE 2016), Jul 2016, Marseille, France |
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Investigation des propriétés optiques des micro-disques de GaP pour l’intégration de fonctions optiques sur siliciumOptique Bretagne 2015 - 35ème Journées Nationales d'Optique Guidée (JNOG'35), Jul 2015, Rennes, France. pp.133-135 |
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Monolithic integration of GaAsPN dilute-nitride compounds on silicon substrates: toward the III-V/Si tandem solar cellSPIE Photonics West - OPTO 2015, Feb 2015, San Francisco, United States |
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Numerical and experimental ongoing on III-V/Si high-efficiency tandem solar cellEuropean Congress and Exhibition on Advanced Materials and Processes (EUROMAT 2015), Sep 2015, Warsaw, Poland |
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Towards the III-V/Si CPV on Si substratesEuropean Materials Research Society - Spring Meeting 2015 (E-MRS 2015 Spring Meeting), May 2015, Lille, France |
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GaAsPN-based PIN solar cells MBE-grown on GaP substrates: toward the III-V/Si tandem solar cellSPIE Photonics West - OPTO 2015, Feb 2015, San Francisco, United States. pp.93580H, ⟨10.1117/12.2081376⟩ |
Toward the III-V/Si high efficiency tandem solar cell7th International Workshop on "Advanced optical and X-ray characterization techniques of multifunctional materials for information and communication technologies, health and renewable energy applications", Sep 2015, Bucarest, Romania |
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Investigation des propriétés optiques des microdisques de phosphure de gallium14ème Colloque international francophone sur les Méthodes et Techniques Optiques pour l'Industrie / 16ème congrès français du club FLUVISU/SFO (CMOI-FLUVISU 2015), Nov 2015, Lannion, France. pp.184-189 |
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Electroluminescence of InGaAs/GaP quantum dots and band engineering of AlGaP/GaP laser injection layersCompound Semiconductor Week 2015 (CSW 2015), Jun 2015, Santa-Barbara, United States |
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Structural, electronic properties and carrier dynamics in InGaAs(N)/GaP quantum dots18th European Molecular Beam Epitaxy Workshop (Euro-MBE 2015), Mar 2015, Canazei, Italy |
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Analyse quantitative des antiphases dans des nanocouches épitaxiales GaP/Si pour la photonique sur siliciumRayons X & Matière 2015, Dec 2015, Grenoble, France |
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Investigation of the optical properties of GaP microdisks for optical functions integrated on siliconCompound Semiconductor Week 2015 (CSW 2015), Jun 2015, Santa-Barbara, United States |
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Electronic band structure and optical properties of GaNxPyAs1-x-y with y≥0.6 studied by electro-modulation spectroscopy and photoluminescenceCompound semiconductor week 2015, Jun 2015, Santa-Barbara, United States |
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Quantitative evaluation of microtwins and antiphase defects towards a GaP/Si platform for monolithic integrated photonicsEuropean Materials Research Society - Spring Meeting 2015 (E-MRS 2015 Spring Meeting), May 2015, Lille, France |
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(In)GaP integration on Si for photonics and energyEuropean Materials Research Society - Fall Meeting 2015 (E-MRS 2015 Fall Meeting), Sep 2015, Warsaw, Poland |
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MBE-grown GaP/Si micro-disks18th European Molecular Beam Epitaxy Workshop (Euro-MBE 2015), Mar 2015, Canazei, Italy |
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Analyse quantitative par diffraction des rayons X des défauts plans dans GaP/SI pour la photonique sur SiRéunion plénière du GDR Pulse (PULSE 2014), Oct 2014, Toulouse, France |
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Epitaxie cohérente de composés GaP et GaAsPN à azote dilué sur substrats de Si pour l’élaboration de cellules PV tandem III-V/SiMatériaux 2014, Nov 2014, Montpellier, France |
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Using high pressure to unravel the nature of optical transitions in (In,Ga)As/GaP quantum dots16th High Pressure in Semiconductor Physics conference (HPSP-16), Aug 2014, Mexico, Mexico |
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Thorough structural and optical analyses of GaP-based heterostructures monolithically grown on silicon substrates for photonics on Si applications: toward the laser on silicon and high efficiency photovoltaics on silicon6th International Workshop on "Advanced optical and X-ray characterization techniques of multifunctional materials for information and communication technologies, health and renewable energy applications", Sep 2014, Bucharest, Romania |
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Advanced concepts of III-V-based Solar Cells heterostructures: towards III-V/Si CPV on Si substrates and hot-carrier solar cells on InP substratesEuropean Materials Research Society 2014 Sptring Meeting (E-MRS 2014), May 2014, Lille, France |
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Low cristalline defect density in GaP/Si nanolayersEuropean Materials Research Society 2014 Sptring Meeting (E-MRS 2014), May 2014, Lille, France |
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Intégration pseudomorphique dans la filière GaP/Si pour les applications lasers sur pucejournées thématiques du GDR Ondes GT2, Nov 2014, Orsay, France |
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Composition dependent nature of the fundamental optical transition in (In,Ga)As/GaP quantum dots26th International Conference on Indium Phosphide and Related Materials (IPRM 2014), May 2014, Montpellier, France. pp.Th-B1-2, ⟨10.1109/ICIPRM.2014.6880555⟩ |
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Design of a lattice-matched III-V-N/Si photovoltaic tandem cell monolithically integrated on silicon substrate13th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2013), Aug 2013, Vancouver, Canada. pp.1397-1403, ⟨10.1007/s11082-014-9909-z⟩ |
Quantitative evaluation of microtwins and antiphase defects in GaP/Si nanolayers for III-V photonics platform on silicon12th Biennal Conference on High-Resolution X-Ray Diffraction and Imaging, Sep 2014, Villard de Lans, France |
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Abrupt heterointerface and low defect density in GaP/Si nanolayersCompound Semiconductor Week 2014, May 2014, Montpellier, France |
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Nature of the optical transition in (In,Ga)As(N)/GaP quantum dots (QDs): effect of QD size, indium composition and nitrogen incorporationCompound semiconductors week, IPRM, 2013, May 2013, Kobe, Japan |
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Advanced X-ray analyses on epitaxially-grown thin films for optoelectronic applications15th International Conference of Physical Chemistry - ROMPHYSCHEM-15, Sep 2013, Bucharest, Romania |
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Analyse quantitative des micromacles dans des nanocouches épitaxiales GaP/Si pour la photonique sur siliciumXème colloque rayons X et matière, Nov 2013, Nantes, France |
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Γ-X competition in (In,Ga)As/GaP quantum dots (QDs) : effect of QD size and Indium compositioneuro-MBE conference, Mar 2013, Levi, Finland |
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Enhanced incorporation of nitrogen on atomic step edges adsorption sites in diluted nitrides alloyseuro-MBE conference, Mar 2013, Levi, Finland |
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Analyse quantitative de la perfection cristalline de nanocouches épitaxiales GaP/SiXème colloque rayons X et matière, Nov 2013, Nantes, France |
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Carrier lifetime and relaxation dynamics in (In)GaAs/GaP quantum dotsInternational Symposium on Physics and Applications of Laser Dynamics IS-PALD, Oct 2013, Paris, France |
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Développement d'un cluster de croissance UHVCVD-MBE pour l'intégration pseudomorphique III-V/SiRéunion plénière du GDR Pulse (PULSE 2013), Jul 2013, Aix-en-Provence, France |
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Intégration optique par croissance directe de nanostructures III-V sur silicium14èmes Journées Nano, Micro et Optoélectronique (JNMO), May 2013, Evian, France |
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GaAsPN compounds for Si photonicsInternational Workshop "Silicon & Photonics", Jun 2013, Rennes, France |
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Boîtes quantiques semi-conductrices : relation entre morphologie, structure électronique et propriétés optiquesJournées Nanosciences et Nanotechnologies du Nord Ouest 2013 (J2NO 2013), Nov 2013, Rennes, France |
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Optimisation des propriétés structurale de l'interface GaP/Si et des propriétés électroniques de cellules solaires GaAsPN/GaP pour la fabrication de cellule tandemJournées nationales du Photovoltaïque JNPV 2013, Dec 2013, Dourdan, France |
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Origin and observations of extended defects in III-V epilayers on SiInternational Workshop "Silicon & Photonics", Jun 2013, Rennes, France |
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Ab initio investigation of defect nucleation at III-V/Si heterointerface for tandem solar cells applicationsEuropean Materials Research Society meeting E-MRS 2013, May 2013, Strasbourg, France |
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Raccordements de bandes et profils de constantes diélectriques pour des hétérostructures 2D à semiconducteursGDR co-DFT, May 2013, guidel, France |
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Quantitative study of microtwins in GaP/Si thin film and GaAsPN quantum wells grown on silicon substrates17th International Conference on Molecular Beam Epitaxy (MBE 2012), Sep 2012, Nara, Japan. pp.25-28, ⟨10.1016/j.jcrysgro.2012.11.046⟩ |
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Growth of GaP on biatomic Si steps using a UHVCVD-MBE clustereuro-MBE conference, Mar 2013, Levi, Finland |
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HR-TEM study of GaN-GaP type II interfaces18th Microscopy of Semiconducting Materials MSMXVIII, Apr 2013, Oxford, United Kingdom |
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gamma-X competition for the optical transition of (In,Ga)As(N)/GaP quantum dots (QDs)European Materials research society meeting EMRS 2013, May 2013, Strasbourg, France |
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UHVCVD-MBE growth cluster for III-N-V/Si solar cellsCompound semiconductors week, ISCS, 2013, May 2013, Kobe, Japan |
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Monolithic integration of diluted-nitride III-V-N compounds on silicon substrates : toward the III-V/Si Concentrated PhotovoltaicsInternational Symposium on Inorganic and Environmental Materials, Oct 2013, Rennes, France |
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Etude par TEM et DRX des défauts cristallins dans des couches épitaxiées par MBE de GaP sur Silicium (001)Réunion plénière du GDR Pulse (PULSE 2013), Jul 2013, Aix-en-Provence, France |
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Raman investigation of GaP-Si interfaces grown by molecular beam epitaxyEuropean Materials Research Society Spring Meeting 2012 (E-MRS Spring 2012), May 2012, Strasbourg, France. pp.72-75, ⟨10.1016/j.tsf.2012.11.132⟩ |
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Investigation of GaAsPN Material towards III-V/Si Solar Cells”, session “New Materials and Concepts for Cells28th European Photovoltaic Solar Energy Conference (EU PVSEC 2013), Sep 2013, Paris, France |
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Toward a III-V/Si tandem solar cell : characterization and modelingEuropean materials research Society meeting E-MRS 2013, May 2013, Strasbourg, France |
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Tight binding simulations in III-V structures on SiInternational Workshop "Silicon & Photonics", Jun 2013, Rennes, France |
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New concept of photovoltaic heterostructure GaP/c-Si : AFORS-HET simulation and first pseudomorphic approachJournées nationales du Photovoltaïque JNPV 2013, Dec 2013, Dourdan, France |
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Structural and optical properties of AlGaP confinement layers and InGaAs quantum dots light emitters onto GaP substrate: towards photonics on silicon applicationEuropean Materials Research Society Spring Meeting 2012 (E-MRS Spring 2012), May 2012, Strasbourg, France. pp.87-91, ⟨10.1016/j.tsf.2012.10.134⟩ |
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UHVCVD-MBE growth for tandem solar cells4th PhotoVoltaic Technical Conference (PVTC 2013), May 2013, Aix-en-Provence, France |
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Crystalline defects in GaP layers grown on Si (001)euro-MBE conference 2013, Mar 2013, Levi, Finland |
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Intrinsic optical confinement for ultrathin InAsN quantum well superlattices31st International Conference on the Physics of Semiconductors (ICPS 2012), Jul 2012, Zurich, Switzerland. pp.464, ⟨10.1063/1.4848486⟩ |
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atomistic modelling of GaNAsP/GaPN type I quantum well heterostructures31st International Conference on the Physics of Semiconductors (ICPS 2012), Jul 2012, Zurich, Switzerland |
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Sb surface mediated growth of InAs on InP(100) and (311)B substratesEuro-mbe conference, Mar 2013, Levi, Finland |
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Growth of III-V GaP on biatomic Si steps using a UHVCVD-MBE clusterJournées nationales du photovoltaïque 2012, 2012, Chantilly, France |
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Développement d'un laser sur silicium dans l'approche pseudomorphiqueJournées nationales de l'optique guidée, 2012, Lyon, France |
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coherent integration of photonics on silicon through the growth of GaP/SiTechnical Meeting of Sandie European Network of Excellence, 2012, Berlin, Germany |
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Monolithic growth of III-V-N diluted nitride devices on Si substrate for solar cellsJournées nationales du photovoltaïque JNPV2012, 2012, Chantilly, France |
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Theoretical and experimental study of (In,Ga)As/GaP quantum dotsInternational Conference on Superlattices, Nanostructures, and Nanodevices (ICSNN 2012), Jul 2012, Dresden, Germany. pp.643, ⟨10.1186/1556-276X-7-643⟩ |
Evaluation of InGaP(N) and GaAsP(N) materials lattice-matched to Si for multi-junction solar cellsinternational conference on MBE, 2012, Japan |
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(In,Ga)As/GaP quantum dots for monolithic integration on silicon31st International Conference on the Physics of Semiconductors (ICPS 2012), Jul 2012, Zurich, Switzerland |
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Potentiality of GaAsPN and InGaPN for photovoltaic applications3rd PhotoVoltaic Technical Conference (PVTC 2012), Jun 2012, Aix-en-Provence, France |
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Unusual C2 symmetry properties of (In,Ga)As/GaP quantum dots morphologyinternational conference on superlattice, nanostructures and nanodevices (ICSNN), 2012, Dresden, Germany |
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Toward a III-V/Si tandem solar cell: characterization and modelingJournées nationales du photovoltaïque JNPV2012, 2012, Chantilly, France |
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Optical and structural properties of (In,Ga)As/GaP quantum dots : C2 to C2v symmetry transition during the ripening processinternational conference on MBE, 2012, Nara, Japan |
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Contribution of DFT code to photovoltaic applicationsJournées nationales du photovoltaïque JNPV2012, 2012, Chantilly, France |
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tight-binding calculations of Ga(NAsP)/GaP(N) quantum wells for photonic integration on siliconinternational conference on superlattice, nanostructures and nanodevices, 2012, Dresden, Germany |
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InGaPN and GaAsPN layers for tandem solar cells on siliconEuropean materials research society international conference (EMRS), 2012, Strasbourg, France |
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Dilute nitride GaNAsP for photonic applications on siliconInternational Symposium on nitrides (ISNT), 2012, saint-Malo, France |
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intrinsic optical confinement for ultrathin InAs/GaAs/GaP quantum well superlatticesinternational conference on superlattice, nanostructures and nanodevices, 2012, Dresden, Germany |
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Evaluation of InGaPN and GaAsPN materials lattice-matched to Si for multi-junction solar cellsJournées nationales du photovoltaïque (JNPV 2012), 2012, Chantilly, France |
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Coherent integration of photonics on silicon through the growth of nanostructures on GaP/SiPhotonics west 2012, Jan 2012, San Fransisco, United States. pp.82681H, ⟨10.1117/12.910279⟩ |
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Interpretation of the two-components observed in high resolution X-ray diffraction omega-scan peaks from mosaic thin films: case of both PLD-grown ZnO on c-sapphire substrate and MBE-grown GaP on silicon substrate3rd International Workshop "Current trends and advanced ellipsometric and XRD techniques for the characterization of nanostructured materials", Sep 2011, Bucharest, Romania |
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MBE growth of (GaAsPN/GaPN)/GaP quantum wells light emitting diodeeuro-MBE 2011, Mar 2011, Alpe d'Huez, France |
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Room temperature photoluminescence if InxGa1-xAs quantum dots on GaP substrateJournées Boîtes Quantiques 2011 (JBQ 2011), Jun 2011, Toulouse, France |
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Développement de nanostructures sur silicium pour l'émission laser à grande longueur d'ondeJournées Nationales du Réseau Doctoral en Micro-nanoélectronique 2011, May 2011, Paris, France |
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Studies of PLD-grown ZnO and MBE-grown GaP mosaic thin films by x-ray scattering methods: beyond the restrictive omega rocking curve linewidth as a figure-of-meritPhotonics West, Jan 2011, San Fransisco, United States. pp.79400L, ⟨10.1117/12.877661⟩ |
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Single InAs/InP quantum dashes and dots morphology on (001) and (113)B substratesJournées Boîtes Quantiques 2011 (JBQ 2011), Jun 2011, Toulouse, France |
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Structural characterisation of GaP/Si nanolayersEuropean Materials Research Society 2011, May 2011, Strasbourg, France |
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structural characterization of MBE grown GaP/Si nanolayerseuro-MBE, Mar 2011, Alpe d'Huez, France |
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Carrier injection in GaAsP(N)/GaPN Quantum Wells on SiliconCompound Semiconductor Week 2011 - 23rd International Conference on Indium Phosphide and Related Materials (IPRM 2011), May 2011, Berlin, Germany. pp.1 |
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Structural charaterisation of GaP/Si nanolayersCompound Semiconductor Week 2011 - 23rd International Conference on Indium Phosphide and Related Materials (IPRM 2011), May 2011, Berlin, Germany. pp.1-4 |
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Single InAs quantum dots morphology and local electronic properties on (113)B InP substrateeuro-MBE, Mar 2011, Alpe d'Huez, France |
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Réalisation d'une DEL à puits quantiques de GaAsP sur substrat GaPINNOV'INSA (Recherche, développement, innovation et transfert à l'INSA), May 2010, Rennes, France. pp.1 |
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caractérisation de semi-conducteurs III-V nanostructurés par microscopie à force atomiqueJournées de la microscopie champ proche Bretagne, Jun 2010, Rennes, France. pp.1 |
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Intégration cohérente de l'optique sur Silicium pour des applications à la télécommunication et au photovoltaïqueJournée Scientifique Jeunes Chercheurs MMS Mesure, Modélisation et Simulation, Jun 2010, Rennes, France |
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Croissance hétérogène de semi-conducteurs III-V sur silicium : vers l'optoélectronique sur siliciumSéminaire PONANT 2010, Jul 2010, Rennes, France. pp.9-11 |
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Analysis of carriers dynamics and laser emission in 1.55 μm InAs/InP(113)B quantum dot lasersSPIE Photonics Europe 2010, Apr 2010, Bruxelles, Belgium. pp.77202F, ⟨10.1117/12.863580⟩ |
Semi-analytical evaluation of linear and non-linear piezoelectric potential for quantum nanostructures with axial symmetryWorkshop on Empirical Methods in Semiconductor Nano-Structures Design and Modelling, Jun 2010, Manchester, United Kingdom |
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Light emitting diodes on silicon substrates: preliminary resultsTNT (Trends in Nanotechnologies), Sep 2008, Oviedo, Spain. pp.2212-16, ⟨10.1002/pssc.200881728⟩ |
Heterogeneous growth and characterisation of III-V material on Si (001) substrate for photonics applicationsjournées de la Société Française de métallurgie et matériaux (SF2M) 2009, Jun 2009, Rennes, France. pp.W. Guo |
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Fundamental studies for coherent growth of III-V materials on Si: toward Photonics on SiliconEMRS, Jun 2009, Strasbourg, France. pp.1 |
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First step to Si photonics: synthesis of quantum dot light-emitters on GaP substrate by MBE9th International Conference Trends in Nanotechnologies (TNT 2008), Sep 2008, Oviedo, Spain. pp.2207, ⟨10.1002/pssc.200881722⟩ |
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Self-organized growth of InAs quantum dots on InP substrate emitting at 1.55-μmSecond French Research Organizations - Tohoku University Joint Workshop on Frontier Materials, Nov 2009, Sendai, Japan. p-23 |
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From k·p to atomic calculations applied to semiconductor heterostructuresPhysics-based mathematical models of low-dimensional semiconductor nanostructures: analysis and computation, Nov 2007, Banff, Alberta, Canada. pp.012009, ⟨10.1088/1742-6596/107/1/012009⟩ |
Toward a light-emitter on Si: Growth of InAs and InP nanostructure on GaP substrate(International Workshop on Semiconductor Quantum Dot Devices and Applications), Jul 2008, Rennes, France. pp.1 |
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Photocurrent study of InAs/GaInAsP(Q1.18) quantum dotsIndium Phosphide and Related Materials (IPRM), May 2008, Versailles, France. pp.309-11, ⟨10.1109/ICIPRM.2008.4702977⟩ |
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Photoluminescence de nanostructures sur substrat GaP/SiJournées Nanosciences de Bretagne (JNB2), May 2008, Rennes, France. pp.1 |
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Preliminary results for the realization of light emitters on silicon substrateSQDA (International Workshop on Semiconductor Quantum Dot Devices and Applications), Jul 2008, Rennes, France. pp.1 |
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Growth and characterization of single phase GaP on Si(001)Colloque de l'Association Française de Cristallographie 2008, Jul 2008, Rennes, France. pp.W. Guo |
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Croissance par MBE de Boites quantiques InP sur GaP/Sijournées nanoscience de Bretagne, Jun 2008, Nantes, France. pp.1 |
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Study of InAs/GaP interfaces from fisrt-principles modellingInternational Workshop on Long Wavelength Quantum Dots : Growth and Applications, Jul 2007, Rennes, France. pp.1 |
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Atomic Calculations Applied to Semiconductor Hetero StructuresInternational Conference of Computational Methods in Sciences and Enginnering 2007 (ICCMSE 2007), Sep 2007, Corfou, Greece. pp.1331, ⟨10.1063/1.2835997⟩ |
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Carrier relaxation dynamics of 1.55 µm InAs/InP quantum dots under high resonant excitation28th International Conference on the Physics of Semiconductors - ICPS 2006, Jul 2006, Vienne, Austria. pp.991, ⟨10.1063/1.2730228⟩ |
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Influence of shape and size of InAs/InP(001) quantum islands grown by SSMBE on the microphotoluminescence emission in the 1.5µm spectral rangeInternational Workshop on Long Wavelength Quantum Dots : Growth and Applications (LWQD), Jul 2007, Rennes, France. pp.1 |
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PHOTOCURENT SPECTROSCOPY OF InAs/GaInAsP(Q1.18) QUANTUM DOTSLWQD (International Workshop on Long Wavelength Quantum Dots : Growth and Applications), Jul 2007, Rennes, France |
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Optical properties and morphology of the quantum dots InAs/InP (311)B characterized by photoluminescenceLWQD (International Workshop on Long Wavelength Quantum Dots : Growth and Applications), Jul 2007, Rennes, France. pp.1 |
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Stransky-Krastanow Gas Source MBE growth and optical properties of InAs/GaP quantum dotseuro-MBE conference, Mar 2007, Sierra nevada, Granada, France. pp.1 |
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Simulation of electronic properties of semiconductor nanostructures for optoelectronic applicationsJournées de GDR-DFT, Mar 2007, Autrans, France |
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A theoretical and experimental study of lambda>2 µm luminescence of quantum dots on InP substrate28th International Conference on the Physics of Semiconductors - ICPS 2006, Jul 2006, Vienne, Austria. pp.889, ⟨10.1063/1.2730177⟩ |
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Dynamics spectroscopy in 1.55 µm InAs/InP quantum dots under high resonant excitationIWSQDA (International Workshop on Semiconductor quantum dot based devices and applications), Mar 2006, Paris, France. pp.1 |
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Theory and experiment of InAs/InP quantum dots : from calculations to laser emission28th International Conference on the Physics of Semiconductor, Jul 2006, Vienne, Austria. pp.779-780, ⟨10.1063/1.2730122⟩ |
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Structures à îlots quantiques sur substrat InP(100)pour l'émission dans le moyen infrarouge (2−5 µm)9th Colloquium on Lasers and Quantum Optics (COLOQ 9), Sep 2005, Dijon, France. pp.283, ⟨10.1051/jp4:2006135090⟩ |
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InAsSb/InGaAs quantum nanostructures on InP (100)substrate: observation of 2.35 μm photoluminescence32nd International Symposium on Compound Semiconductors, Sep 2005, Rust, Germany. pp.524, ⟨10.1002/pssc.200564132⟩ |
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InAs/InP quantum dots (QDs) : from fundamental understanding to coupled QD 1.55 µm laser applicationsInternational Conference on SuperLattices, Nano-structures and Nano-Devices, Jul 2006, Istanbul, Turkey. pp.458, ⟨10.1002/pssc.200673215⟩ |
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InAs(Sb)/InP(100) quantum dots for mid-infrared emitters: observation of 2.35 μm photoluminescence4th International Conference on Semiconductor Quantum Dots (QD 2006), May 2006, Chamonix, France. pp.3920, ⟨10.1002/pssc.200671622⟩ |
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Optical characterisation of InAs/InP self-assembled quantum dots for optimisation of lasing propertiesSandie Optics Task Force meeting, Technische Universitat Berlin, January 12-13 (2006), Jan 2006, Berlin, Germany. pp.1 |
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Charge carrier redistribution in ordered Arrays of laterally coupled self-assembled quantum dotsUK Compound Semiconductors conference, Jul 2006, Sheffield, United Kingdom. pp.1 |
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InAs/InP quantum dots (QD) properties : How to improve QD laser performanceInternational Workshop on Semiconductor Quantum Dot Based Devices and Applications, Mar 2006, Paris, France. pp.1 |
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Réalisation d'un laser à faible courant de seuil, avec des boites quantiques InAs/InP organisées et couplées latéralement9th Colloquium on Lasers and Quantum Optics (COLOQ 9), Sep 2005, Dijon, France. pp.141, ⟨10.1051/jp4:2006135031⟩ |
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Exciton and biexciton lifetimes in InAs/InP quantum dots emitting at 1.55 µm wavelength under high resonant excitationICSSN (International Conference on SuperLattices, Nano-structures and Nano-Devices), Jul 2006, Istanbul, Turkey. pp.454, ⟨10.1002/pssc.200673214⟩ |
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First observation of 2.4 microns photoluminescence of InAsSb/InP quantum dots on (100) InP substrateNarrow Gap Semiconductors conference, Jul 2005, Toulouse, France. pp.1 |
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First observation of wavelength greater than 2 microns photoluminescence of quantum dots on InP (100) substrate"Mid Infrared Optoelectronics : Materials and Devices" conference, Lancaster, UK, September (2005)., Sep 2005, Lancaster, United Kingdom. pp.1 |
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Nanotechnologies: Etude des boites quantiques pour des applications télécoms, environnementales et médicalesjournées CIES : moniteurs du grand-ouest, 2005, Rennes, France |
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InAsSb/InP quantum dots for midwave infrared emitters : a theoretical studyMid Infrared Optoelectronics : Materials and Devices : MIOMD conference, 2005, Lancaster, United Kingdom. pp.1 |
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Carrier dynamics and saturation effect in (311)B InAs/InP quantum dot lasersPHASE 2005, international workshop on physics and applications of semiconductors lasers, 2005, Metz, France. pp.1 |
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Properties of 1.55 microns quantum dots: Simulation, calculation and optical characterizationinvited seminar at the KU Leuven, 2005, Leuven, Belgium |
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Theoretical Description Of The Electronic Coupling Between A Wetting Layer And A QD Superlattice PlaneInternational Conference on Physics of Semiconductors (ICPS 27), Jul 2004, Flagstaff, United States. pp.787, ⟨10.1063/1.1994342⟩ |
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Mesure directe de l'absorption optique à 1.55 microns de boites quantiques InAs/InP (113)B et étude de l'influence du couplage boite/couche de mouillage sur les propriétés électroniquesJournées de la matière condensée, 2004, Nancy, France. pp.1 |
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Mesure directe de l'absorption optique à 1.55 microns de boites quantiques InAs/InP (113)B et étude de l'influence du couplage boite/couche de mouillage sur les propriétés électroniquesjournée des doctorants de Rennes, Dec 2004, Rennes, France. pp.1 |
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Reciprocal space description of the electronic coupling between a wetting layer and a QD superlattice planeCECAM workshop on "modeling of self-assembled semi-conductors nanostructures", Jun 2004, Lyon, France. pp.1 |
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Exact solutions of the Schrödinger equation in disk-shaped quantum dots and rings, infinite and finite confinement potentials, Stark and excitonic effectCECAM workshop on "modeling of self-assembled semi-conductors nanostructures", Jun 2004, Lyon, France. pp.1 |
Robust, cost effective aNd AUTonomous PhotoelectrochemIcaL cells with III-V thin films on Si for practical hydrogen prodUctionPEPR H2 days, Mar 2025, Nantes, France |
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Study of physical properties of antiphase boundaries in III-V epitaxial layer on silicon with conductive tip atomic force microscopy (C-AFM) and with Kelvin Probe Force Microscopy (KPFM) techniques.C'NANO, 2025, Paris, France |
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Electro-optical properties of III-V/Si photocathodesPEPR H2 days, Mar 2025, Nantes, France. 2025 |
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Etude des propriétés de transport des parois d’antiphase dans les semiconducteurs III-V/Si par les techniques C-AFM et KPFM.GDR MatEpi, 2025, Lille, France |
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PhysIcAl properties of hybrid semimetal/semicoNductor III-V/Si maTerialsC’Nano annual congress, Mar 2025, Paris, France. 2025 |
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Atomic scale description of III-V/Si (001) heteroepitaxial crystals23rd International Conference on Molecular-Beam Epitaxy (ICMBE 2024), Sep 2024, Matsue, Japan |
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Cost-efficient III-V/Si photo-electrodes for hydrogen productionPEPR H2 days, Mar 2024, Grenoble, France |
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Large onset potential improvement with an epitaxial GaAs/Si photocathode for solar H2 production.23rd International Conference on Molecular-Beam Epitaxy (ICMBE 2024)., Sep 2024, Matsue, Japan |
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InP-based Materials on Si for Energy and Photonic Applications23rd International Conference on Molecular-Beam Epitaxy (ICMBE 2024)., Sep 2024, Matsue, Japan |
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Near Ambient Pressure-X-ray Photoelectron Spectroscopy study of GaAs based photoelectrodesJournées Surfaces et Interfaces 2024, Jan 2024, Grenoble, France |
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Fabrication and characterization of zinc sulfide nanowaveguides for 2nd-order nonlinear photonics36th International Confererence on the Physics of Semiconductors 2024, Jul 2024, Ottawa, Canada |
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Heteroepitaxial growth of III-V on Si: a DFT perspective36th International Confererence on the Physics of Semiconductors 2024., Jul 2024, Ottawa, Canada |
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Absolute surface and interface energy analysis of III-V/Si and its consequences on wetting characteristicsJournées Surfaces & Interfaces 2024, Jan 2024, Grenoble, France |
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Impact of initial surface passivation on wetting properties analysis during III-V/Si epitaxyE-MRS 2024 Spring meeting, May 2024, Strasbourg, France |
Microstructure characterization of CIGS/GaP/Si tandem solar cellsEuropean Microscopy Congress (EMC) 2024, Aug 2024, Copenhagen, Denmark |
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Impact of surface passivation of III-V elements on Si (001) substrate based on absolute surface and barrier energy calculationsJournée Scientifique SFP-SCF Bretagne & Pays de Loire 2023, May 2023, Rennes, France. 2023 |
Using in-plane built-in electric fields and electrical shunts of antiphase boundaries for III-V/Si solar harvesting devices21st EuroMBE Workshop, Apr 2023, Madrid, Spain. 2023 |
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High stability of a MBE grown GaAs/Si photocathode for solar H2 production.21st EuroMBE Workshop, Apr 2023, Madrid, Spain. 2023 |
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Performance of epitaxial GaAs/Si vs GaAs photocathodes for solar hydrogen production.74th Annual Meeting of the International Society of Electrochemistry, Sep 2023, Lyon, France. 2023 |
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Determination of absolute “surface and interface” energies in heterogeneous materials systems and hetero-interfaces: A theoretical approachEuropean Materials Research Society (EMRS) Fall Meeting 2022, Sep 2022, Warsaw, Poland. 2022 |
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Toward the growth of low defect density GaSb-based layers and devices on Silicon(001) substratesCompound Semicondcutor Week 2022 (CSW 2022), Jun 2022, Ann Arbor, United States |
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III-V GaP solar cells on silicon12è Journées Nationales du PhotoVoltaïque (JNPV 2022), Nov 2022, Dourdan, France |
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Photoemission study of S-vapour exposed epi-GaP/c-Si(001) surfaces12è Journées Nationales du PhotoVoltaïque (JNPV 2022), Nov 2022, Dourdan, France |
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Determination of absolute “surface/interface” energies in heterogeneous materials and hetero-interfaces: A theoretical approachEuropean Materials Research Society - Fall Meeting 2022 (E-MRS 2022 Fall Meeting), Sep 2022, Warsaw, Poland |
Performances of III-P/Si based photoelectrodes for solar hydrogen productionJournées Nationales du photovoltaïque 2020, Jan 2021, Dourdan, France. 2021 |
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Bandgap engineering of III-V semiconductors on silicon for solar hydrogen production5èmes Journées des Carburants Solaires, Sep 2021, Saint Jacut de la Mer, France |
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CIGS growth on a GaP/Si(001) platform: towards CIGS/Si tandem solar cells11è Journées Nationales du PhotoVoltaïque (JNPV 2021), Jan 2021, Dourdan, France |
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MBE-grown GaAs(x)P(1-x)/Si photoelectrodes for solar hydrogen production21st International Conference on Molecular-Beam Epitaxy (ICMBE 2018), Sep 2021, Mexico (virtual), Mexico |
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Epitaxial growth of Cu(In, Ga)S2 thin films on GaP/Si(001) pseudo-substrate for CIGS/Si tandem solar cellJNPV 2021, Dec 2021, Dourdan, France |
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Influence des paramètres de croissance de l'homoépitaxie silicium par UHV- CVD sur la reconstruction de surface du siliciumJournées Nanomatériaux, Jan 2020, Rennes, France |
Dual wavelength vertical coupling for SHG in GaP microdisksJournées Nanomatériaux de Rennes, Jan 2020, Rennes, France. 2020 |
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Dual wavelength vertical coupling for SHG in GaP microdisks39è Journées Nationales d'Optique Guidée (JNOG 2019), Jul 2019, Palaiseau, France |
Electron-phonon interactions around antiphase boundaries in InGaP/SiGe/Si : structural and optical characterizationsInternational Symposium : 20th Anniversary of LPQM, Apr 2019, Cachan, France |
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A Study on the Strain Distribution by Scanning X-ray diffraction on GaP/Si for III-V Monolithic Integration on Silicon for Nonlinear OpticsRayons X et Matière 2019, Nov 2019, Nancy, France |
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Photoluminescence of 2D-vertical In-rich APBs embedded in InGaP/SiGe/Si20th International Conference on Molecular-Beam Epitaxy (ICMBE 2018), Sep 2018, Shanghai, China. 2018 |
Antiphase boundaries in InGaP/SiGe/Si : structural and optical propertiesEuropean Materials Research Society - Spring Meeting 2018 (E-MRS 2018 Spring Meeting), Jun 2018, Strasbourg, France. 2018 |
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Computational design of high performance hybrid perovskite on silicon 2-T tandem solar cells based on a tunnel junctionInternational Conference on Perovskite Thin Film Photovoltaics, Photonics and Optoelectronics 2018 (ABXPV&PEROPTO 18), Feb 2018, Rennes, France. 2018 |
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Scanning tunneling microscopy investigation of GaP epitaxial growth on nominal and vicinal Si(001) substrates for optoelectronic applicationsEuropean Materials Research Society - Spring Meeting 2018 (E-MRS 2018 Spring Meeting), Jun 2018, Strasbourg, France. 2018 |
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Excitons bounded around In-rich antiphase boundaries34th International Conference on the Physics of Semiconductors (ICPS 2018), Jul 2018, Montpellier, France. 2018 |
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Study of the 3D growth mode of III-V on Si by DFTRéunion plénière du GDR Pulse (PULSE 2017), Oct 2017, Paris, France |
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Indium content impact on structural and optical properties of (In,Ga)As/GaP quantum dots31è colloque Journées Surfaces et Interfaces (JSI 2017), Jan 2017, Rennes, France |
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Towards III-V on silicon solar cells7è Journées Nationales du PhotoVoltaïque (JNPV 2017), Dec 2017, Dourdan, France. 107, pp.191603 - 191603, 2015 |
GaP/Si(001) polar-on-nonpolar epitaxial growth revisited by scanning tunneling microscopy31è colloque Journées Surfaces et Interfaces (JSI 2017), Jan 2017, Rennes, France |
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Computational design of high performance hybrid perovskite on silicon 2-T tandem solar cells based on a tunnel junction17th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD'17), Jul 2017, Copenhagen, Denmark |
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GaAsPN Absorbers Grown on GaP for Multijunction Solar Cells: Optical Absorption and Thermal Conductivity Properties19th International Conference on Molecular-Beam Epitaxy (IC-MBE 2016), Sep 2016, Montpellier, France. 2016 |
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Scanning tunneling microscopy investigation of GaP epitaxial growth on nominal and vicinal Si(001) substrates for optoelectronic applicationsEuropean Materials Research Society - Spring Meeting 2016 (E-MRS 2016 Spring Meeting), May 2016, Lille, France |
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Structural and optical properties investigation of (In,Ga)As/GaP quantum dots for direct bandgap emission19th International Conference on Molecular-Beam Epitaxy (IC-MBE 2016), Sep 2016, Montpellier, France |
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RTA effects on optical absorption and thermal conductivity of GaAsPN grown on GaP for tandem solar cell applicationsEuropean Materials Research Society - Spring Meeting 2016 (E-MRS 2016 Spring Meeting), May 2016, Lille, France. 2016 |
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Optical and magneto-optical properties of GaAsPN/GaPN quantum wellsXV Brazil-Materials Research Society Annual Meeting (B-MRS 2016), Sep 2016, Campinas, São Paulo, Brazil. , O.P1.23 |
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Relationship between antiphase domains, roughness and surface/interface energies during the epitaxial growth of GaP on SiEuropean Materials Research Society - Spring Meeting 2016 (E-MRS 2016 Spring Meeting), May 2016, Lille, France |
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GaAsPN Single and Tandem Solar Cells on Silicon19th International Conference on Molecular-Beam Epitaxy (IC-MBE 2016), Sep 2016, Montpellier, France |
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Impact of Antiphase Boundaries on Non-linear Frequency Conversion in GaP/Si MicrodisksCompound Semiconductor Week 2016 (CSW 2016), Jun 2016, Toyama, Japan |
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AlGaP-growth and doping by MBE19th International Conference on Molecular-Beam Epitaxy (IC-MBE 2016), Sep 2016, Montpellier, France |
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Thermal management of monolithic and heterogeneous integrated lasersCompound Semiconductor Week 2016 (CSW 2016), Jun 2016, Toyama, Japan |
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Etude par microscopie à effet tunnel de la croissance épitaxiale de GaP sur substrats Si(001) nominaux et vicinaux pour l’optoélectroniqueRéunion plénière du GDR Pulse (PULSE 2016), Jul 2016, Marseille, France |
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Scanning tunneling microscopy investigation of GaP MBE growth on nominal and vicinal Si(001) substrates for optoelectronic applications19th International Conference on Molecular-Beam Epitaxy (IC-MBE 2016), Sep 2016, Montpellier, France |
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X-ray Coherent Scattering on GaP/Si for III-V Monolithic Integration on SiliconInternational Workshop on Phase Retrieval and Coherent Scattering (COHERENCE 2016), Jun 2016, Saint-Malo, France. 2016 |
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GaP/Si Antiphase domains annihilation at the early stages of growthSummer School of the French Epitaxy Network, Sep 2015, Porquerolles, France |
Electroluminescence de boites quantiques InGaAs/GaP et ingénérie de bande des couches d’injection laser AlGaP/GaPOptique Bretagne 2015 - 35ème Journées Nationales d'Optique Guidée (JNOG'35), Jul 2015, Rennes, France |
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Vers les cellules solaires à haut rendement à base de composés III-V sur substrats bas-couts de siliciumOptique Bretagne 2015 - Horizons de l'Optique, Jul 2015, Rennes, France |
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Carrier injection in GaP-based laser waveguides and dilute nitrides gain medium18th European Molecular Beam Epitaxy Workshop (Euro-MBE 2015), Mar 2015, Canazei, Italy. 2015 |
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Lattice-matched GaAsPN/GaP single junction solar cell for high-efficiency tandem solar cells on siliconEuro-MBE 2015, Mar 2015, Canazei, Italy. 2015 |
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GaAsPN alloys for optoelectronics on SiliconCompound Semiconductor Week 2014, May 2014, Montpellier, France. 2014 |
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Electrical injection in GaP-based laser waveguides and active areas26th International Conference on Indium Phosphide and Related Materials (IPRM 2014), May 2014, Montpellier, France. IEEE, 26th International Conference on Indium Phosphide and Related Materials (IPRM 2014), pp.P23, 2014, ⟨10.1109/ICIPRM.2014.6880545⟩ |
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Annealing effect on electrical properties of GaAsPN solar cells29th European PV Solar Energy Conference (EU PVSEC 2014), Sep 2014, Amsterdam, Netherlands. 2014 |
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Impact of annealing on the performances of GaAsPN-based solar cellsCompound Semiconductor Week 2014, May 2014, Montpellier, France. 2014 |
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Development of GaAsPN alloy for its integration in III-V/Si tandem solar cellWorkshop on above 25% efficiency solar cells via low cost approaches, Jul 2014, Palaiseau, France |
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Strain-induced fundamental optical transition in (In,Ga)As/GaP quantum dots32nd International Conference on the Physics of Semiconductors (ICPS 2014), Aug 2014, Austin, United States. 2014 |
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Carrier capture and relaxation in GaAsPN/GaP quantum wells32nd International Conference on the Physics of Semiconductors (ICPS 2014), Aug 2014, Austin, United States. 2014 |
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Nature of the optical transition in (In,Ga)As(N)/GaP quantum dots (QDs): effect of QD size, indium composition and nitrogen incorporation25th International Conference on Indium Phosphide and Related Materials (IPRM2013), May 2013, Kobe, Japan. IEEE (ISSN: 1092-8669 ; e-ISBN: 978-1-4673-6131-6 ; Print ISBN: 978-1-4673-6130-9), IEEE Xplore Digital Library, pp.1-2, 2013, International Conference on Indium Phosphide and Related Materials (IPRM), 2013. ⟨10.1109/ICIPRM.2013.6562587⟩ |
Integrated Lasers on SiliconISTE Press - Elsevier, 2016, 9781785480621. ⟨10.1016/C2015-0-01237-0⟩ |
Chapter 28 - GaP/Si-Based Photovoltaic Devices Grown by Molecular Beam EpitaxyMolecular Beam Epitaxy (Second Edition)From Research to Mass Production, pp.637-648, 2018, ⟨10.1016/B978-0-12-812136-8.00030-X⟩ |
Contribution to the study of monolithic integration of III-V semiconductors on silicon in the pseudomorphic approach for photonics and photovoltaics2014 |
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Integration of III-V nanostructures on silicon in the pseudomorphic approach2013 |
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Computational design of high performance hybrid perovskite on silicon tandem solar cells2016 |
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propriétés électroniques, optiques et dynamiques de boites quantiques auto-organisées et couplées sur substrat InPPhysique [physics]. INSA de Rennes, 2006. Français. ⟨NNT : ⟩ |
Towards high-efficiency and low-cost epitaxial CIGSu/Si tandem solar cellsProceedings of SPIE, the International Society for Optical Engineering, PC12002, SPIE, pp.PC120020Q, 2022, Oxide-based Materials and Devices XIII, ⟨10.1117/12.2619151⟩ |