
Christophe Delerue
349
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Publications
Toward nanocrystal-based active nanophotonic devicesnanoGe Spring Meeting 2022, Mar 2022, Online, Spain. ⟨10.29363/nanoge.nsm.2022.029⟩
Communication dans un congrès
hal-03641931
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Theoretical Optical Performances of Semiconductor Nanocrystals for Image Sensors and Photovoltaics ApplicationsMRS Fall Meeting, Materials Research Society, Nov 2022, Boston (MA), United States
Communication dans un congrès
hal-03951009
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Theoretical studies on PbS nanocrystals for photodetector applicationsColloidal Semiconductor Nanocrystals - Gordon Research Conference, Jul 2022, Les Diablerets, Switzerland
Communication dans un congrès
hal-03787101
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[Invited] Optical absorption quantization in thin films of semiconductorsESSCIRC ESSDERC 2021 Educational Events, Sep 2021, Grenoble, France
Communication dans un congrès
hal-03349301
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Towards III-V semiconductor-based artificial grapheneCompound Semiconductor Week2021, CSW 2021, May 2021, Stockholm, Suède., May 2021, Stockholm, Sweden
Communication dans un congrès
hal-04485771
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Toward nanocrystal-based active nanophotonic devicenanoGe Fall Meeting 2021, Oct 2021, Online, Spain. ⟨10.29363/nanoge.nfm.2021.054⟩
Communication dans un congrès
hal-03642038
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[Invited] Pushing the limit of lithography for patterning two-dimensional lattices in III-V semiconductor quantum wells5th IEEE Electron Devices Technology & Manufacturing Conference, EDTM 2021, Apr 2021, Chengdu, China. pp.1-3, ⟨10.1109/EDTM50988.2021.9420884⟩
Communication dans un congrès
hal-03261329
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Intrinsic carrier mobility of Graphene, CNT, and GNRGraphene2021, Oct 2021, Grenoble, France
Communication dans un congrès
hal-03587596
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[Invited] Bandes plates et cônes de Dirac dans des réseaux électroniques artificiels en nids d’abeilles34èmes Journées Surfaces & Interfaces, JSI 2020, Jan 2020, Paris, France
Communication dans un congrès
hal-03317736
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[Invited] Quantized optical absorption in quasi-2D semiconductors: Theory, comparison with experiments and open questionsnanoGe Fall Meeting, NGFM20, Oct 2020, Barcelone, Spain
Communication dans un congrès
hal-02977041
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[Invited] Theory of optical absorption in semiconductor nanocrystals: from single nanocrystals to superlatticesnanoGe Fall Meeting, NGFM19, Nov 2019, Berlin, Germany
Communication dans un congrès
hal-03317734
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[Invited] Non-linear optical properties of semiconductor nanocrystals37th European Materials Research Society Spring Meeting, E-MRS Spring 2019, Symposium P - Dielectric nanocomposites for energy, environment and health: from fundamental to devices, May 2019, Nice, France
Communication dans un congrès
hal-03317729
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[Invited] Optical absorptivity in superlattices of nanocrystals14th IEEE Nanotechnology Materials and Devices Conference, NMDC 2019, Oct 2019, Stockholm, Sweden
Communication dans un congrès
hal-03317731
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Dirac antidot superlattices for electrons in III-V semiconductors37th European Materials Research Society Spring Meeting, E-MRS Spring 2019, May 2019, Nice, France
Communication dans un congrès
hal-04485976
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Crystal facet engineering in Ga-doped ZnO nanowires for mid-IR plasmonics (Conference Presentation)SPIE Photonics West, Symposium on Oxide-based Materials and Devices X, Feb 2019, San Francisco, France. pp.72, ⟨10.1117/12.2517470⟩
Communication dans un congrès
hal-03323056
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[Invited] Quantum and dielectric confinement effects on the absorption strength in semiconductorsnanoGe Fall Meeting, NGFM19, Symposium #Sol2D19 - Two Dimensional Layered Semiconductors, Nov 2019, Berlin, Germany
Communication dans un congrès
hal-03317733
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Crystal facet engineering in Ga-doped ZnO nanowires for Mid-IR plasmonicsTCM2018, Oct 2018, Crete, Greece
Communication dans un congrès
hal-02010197
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ZnO nanowire facet transformation induced by Ga dopingIWZnO 2018, Sep 2018, varsovie, Poland
Communication dans un congrès
hal-02010195
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[Invited] LEGO® bricks at the nanoscale7th International Conference on Nanostructures and Nanomaterials Self-Assembly, NanoSEA 2018, Jul 2018, Carqueiranne, France
Communication dans un congrès
hal-03317611
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Ga and Al degeneratly doped ZnO Nanocrystals for Mid IR plasmonicsIWZnO2018, Sep 2018, Varsovie, Poland
Communication dans un congrès
hal-01875129
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[Invited] Metallic ZnO nanocrystals for Mid IR plasmonicsNanomaterialstrends 2018, Univ. Cattolica del Sacro Cuore Brescia, Sep 2018, Brescia, Italy
Communication dans un congrès
hal-01875130
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[Invited] Theory of Localized Surface Plasmon Resonance in Doped Semiconductor NanocrystalsInternational Conference on Fundamental Processes in Semiconductor Nanocrystals, nanoGe Fall Meeting 2018, Oct 2018, Torremolinos, Malaga, Spain. ⟨10.29363/nanoge.nfm.2018.191⟩
Communication dans un congrès
hal-03317726
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[Invited] Theory of Optical Properties of 2D Semiconductor Nanocrystal LatticesInternational Conference on “Nanophotonics by Nanocrystals”, nanoGe Fall Meeting, Oct 2018, Torremolinos, Malaga, Spain. ⟨10.29363/nanoge.nfm.2018.199⟩
Communication dans un congrès
hal-03317728
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Theory of Si nanocrystals (co)doped with P and B impuritiesEMRS Fall Meeting, Symposium T: Silicon, Germanium, Diamond and Carbon Nanostructures and Their Nanocomposites with Other Materials, Sep 2017, Warsaw, Poland
Communication dans un congrès
hal-03317609
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Electronic structure and optical properties of 2D nanostructured semiconductorsNanoGe September Meeting, Sep 2017, Barcelona, Spain
Communication dans un congrès
hal-03317607
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Colloidal semiconductor nanocrystal: from single objects to artificial solidsGeneral Scientific Meeting of the Belgian Physical Society, BPS Meeting 2017, May 2017, Mons, Belgium
Communication dans un congrès
hal-03317605
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Electronic transport in 1D nanostructures5th International Conference “Smart and Multifunctional Materials, Structures and Systems”, CIMTEC 2016. Symposium G - Multifunctional Inorganic One-dimensional Nanostructures: Status and Potential, Jun 2016, Perugia, Italy
Communication dans un congrès
hal-03317602
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A study of diffusive transport in 14nm FDSOI MOSFET: NEGF versus QDD2016 ESSDERC - 46th European Solid-State Device Research Conference, Sep 2016, Lausanne, Switzerland. pp.424-427, ⟨10.1109/ESSDERC.2016.7599676⟩
Communication dans un congrès
hal-02065220
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Band structure of 2D nanomaterialsInternational Conference on Solution-based Two-dimensional Nanomaterials, Sol2D16, Sep 2016, Berlin, Germany
Communication dans un congrès
hal-03317603
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Manipulating spin polarization and carrier mobility in zigzag graphene ribbons using an electric field2016 IEEE International Electron Devices Meeting (IEDM), Dec 2016, San Francisco, United States. pp.36.3.1-36.3.4
Communication dans un congrès
hal-02143466
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(Invited) Topological States in Multi-Orbital Honeycomb Lattices of HgTe (CdTe) Quantum Dots228th Meeting of the Electrochemical Society, Oct 2015, Phoenix, United States. pp.81-88, ⟨10.1149/06905.0081ecst⟩
Communication dans un congrès
hal-02906822
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Localized surface plasmon resonance of boron- and phosphorus-doped silicon nanocrystalsEuropean Materials Research Society Spring Meeting, E-MRS Spring 2015, Symposium H - Nanoparticles in dielectric matrix for electronics and optics: from the fabrication to the devices, May 2015, Lille, France
Communication dans un congrès
hal-03317594
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Full-zone k · p parametrization for III-As materials2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2015, Washington DC, United States. pp.28-31
Communication dans un congrès
hal-02138887
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Semiconductors with dimensionality between zero and twoWorkshop "Designing Dirac carriers in semiconductor honeycomb superlattices", 2014, Utrecht, Netherlands
Communication dans un congrès
hal-01015322
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Image and many-body effects in ultra-thin gate insulator MOSFET with In0.53Ga0.47As channel material and their influence on gate leakage current17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, 2014, Villeneuve d'Ascq, France. 5 p
Communication dans un congrès
hal-01020291
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Near-thresholdless optical gain using colloidal HgTe quantum dots30 years of Colloidal Quantum Dots, 2014, Paris, France
Communication dans un congrès
hal-01015227
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A computational model for the investigation of phonon-limited charge transport in 2D systemsIWCE 2014 - 17th International Workshop on Computational Electronics, Jun 2014, Paris, France. pp.227-228
Communication dans un congrès
hal-01005699
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Preparation and study of 2-D semiconductors with Dirac type bands due to the honeycomb nanogeometrySPIE Photonics West, OPTO 2014, Conference 8981 - Physics, Simulation, and Photonic Engineering of Photovoltaic Devices III, 2014, San Francisco, CA, United States. ⟨10.1117/12.2042882⟩
Communication dans un congrès
hal-00964400
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From semiconductor nanocrystals to artificial graphene and topological insulatorEuropean Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium F - Established and emerging nanocolloids : from synthesis & characterization to applications, 2014, Lille, France
Communication dans un congrès
hal-00966143
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Preparation and study of semiconductors with a honeycomb nanogeometryInternational Conference on Fundamental Processes in Semiconductor Nanocrystals, FQDots14, Sep 2014, Oxford, United Kingdom
Communication dans un congrès
hal-03317544
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Thresholdless optical gain using colloidal HgTe nanocrystalsConference on Lasers and Electro-Optics, CLEO 2014, Laser Science to Photonic Applications, 2014, San Jose, CA, United States. paper FTh4C.4, 2 p., ⟨10.1364/CLEO_QELS.2014.FTh4C.4⟩
Communication dans un congrès
hal-00974546
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Phosphorus-hyperdoped Si nanocrystals : a model for localized surface plasmon resonanceEuropean Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium X - Materials research for group IV semiconductors : growth, characterization and technological developments, 2014, Lille, France
Communication dans un congrès
hal-00961394
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[Invited] From semiconductor nanocrystals to artificial graphene and topological insulatorColloidal Quantum Dots and Nanocrystals, CQDN 2014, Jul 2014, Manchester, United Kingdom
Communication dans un congrès
hal-01044694
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Room-temperature quantum spin Hall effect in HgTe honeycomb superlatticesAmerican Physical Society March Meeting, APS March Meeting 2014, Session B31 - Focus Session : Computational Discovery and Design of New Materials II, 2014, Denver, CO, United States
Communication dans un congrès
hal-00922589
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Hyperspectral analysis of ultrafast hot carrier dynamics in Pb-chalcogenide nanocrystals : a case for slow cooling8th International Conference on Quantum Dots, QD 2014, 2014, Pisa, Italy
Communication dans un congrès
hal-01015211
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[Invited] Phonon-limited transport in Si, Ge, Ge/Si nanowiresNanowires 2014, Sep 2014, Eindhoven, Netherlands
Communication dans un congrès
hal-01044673
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Optical properties of HgTe nanocrystalsEuropean Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium F - Established and emerging nanocolloids : from synthesis & characterization to applications, 2014, Lille, France
Communication dans un congrès
hal-01015327
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[Invited] Electronic doping : from bulk semiconductors to nanocrystalsWorkshop on Coupling between Nanocrystals and Dopants, GdR 3531 NACRE, 2013, Villiers-sur-Mer, France
Communication dans un congrès
hal-00878825
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Graphène artificiel à fort couplage spin-orbite formé par auto-assemblage de nanocristaux de semiconducteursRéunion plénière du GDR 3325 CoDFT, 2013, Guidel-Plages, France
Communication dans un congrès
hal-00819693
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[Invited] Artificial graphene superlattices made of semiconductor nanocrystalsGraphene Day, May 2013, Utrecht, Netherlands
Communication dans un congrès
hal-00823435
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How do surfaces control the electrostatics of semiconductor nanostructures ?Materials Research Society Spring Meeting, MRS Spring 2013, Symposium Q : Surfaces of Nanoscale Semiconductors, Apr 2013, San Francisco, United States
Communication dans un congrès
hal-03317242
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Hot-carrier relaxation and carrier multiplication in Si nanostructuresEuropean Materials Research Society Spring Meeting, E-MRS Spring 2013, Symposium D - Advanced inorganic materials and structures for photovoltaics, May 2013, Strasbourg, France
Communication dans un congrès
hal-03317241
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Transport properties of strained nanowires and devicesMaterials Research Society Spring Meeting, MRS Spring 2013, Symposium R : Nanostructured Semiconductors and Nanotechnology, May 2013, San Francisco, United States
Communication dans un congrès
hal-03317308
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Graphène artificiel à fort couplage spin-orbite formé par auto-assemblage de nanocristaux de semiconducteursJournées Boîtes Quantiques 2013, JBQ 2013, 2013, Paris, France
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hal-00922582
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[Invited] Strain effects on carrier mobility in Si and Ge nanowires5ème Assemblée Générale du GdR Nanofils Semiconducteurs, 2013, Saint-Martin-de-Londres, France
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hal-00811810
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[Invited] Nanocrystal self-assembly as a route to atomically coherent 2D semiconductor superlattices with Dirac-type charge carriersWorkshop Supranano : Self-Assemblies, Jun 2013, Paris, France
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hal-00878824
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Dirac fermions and topological phases in honeycomb superlattices of semiconductor nanocrystalsGordon Research Conference on Clusters, Nanocrystals & Nanostructures - From Fundamental Chemical and Physical Processes to Applications, Aug 2013, South Hadley, United States
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hal-03317233
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Electronic and transport properties of semiconductor nanowires5th International Conference on One-dimensional Nanomaterials, ICON13, Sep 2013, Annecy, France
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hal-03317239
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Transport properties of strained silicon nanowires42nd European Solid-State Device Research Conference, ESSDERC 2012, 2012, Bordeaux, France. pp.session C3L-G, 290-293, ⟨10.1109/ESSDERC.2012.6343390⟩
Communication dans un congrès
hal-00801132
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[Invited] Carrier multiplication in quantum dots for more efficient solar cells4èmes Journées de Physique Théorique, May 2012, Grenoble, France
Communication dans un congrès
hal-00797754
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Influence of strains on the electron and hole mobility in silicon nanowires15th International Workshop on Computational Electronics, IWCE-15, 2012, Madison, WI, United States. pp.203-204
Communication dans un congrès
hal-00801139
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Electron-phonon scattering in silicon nanowiresMaterials Research Society Spring Meeting, MRS Spring 2012, Symposium AA : Inorganic Nanowires and Nanotubes - Synthesis, Properties, and Device Applications, 2012, San Francisco, CA, United States
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hal-00798125
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Band offsets : nano is not bulk15th International Workshop on Computational Electronics, IWCE-15, 2012, Madison, WI, United States. pp.3-4
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hal-00801124
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Band offsets, wells and barriers in nanowire heterostructures : is the simple ''square wells and barriers'' model always valid ?Materials Research Society Spring Meeting, MRS Spring 2012, Symposium AA : Inorganic Nanowires and Nanotubes - Synthesis, Properties, and Device Applications, 2012, San Francisco, CA, United States
Communication dans un congrès
hal-00797756
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Ultrafast transient absorption spectroscopy of HgTe quantum dotsOptics & Photonics joint with Quantum Electronics & Photonics, Photon 12/QEP-20, 2012, Durham, United Kingdom
Communication dans un congrès
hal-00798255
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Efficiency of carrier-multiplication in semiconductor quantum dots : theory and simulationsSPIE Optics + Photonics, Conference 8471 : Next Generation (Nano) Photonic and Cell Technologies for Solar Energy Conversion III, Aug 2012, San Diego, United States
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hal-03317142
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Carrier multiplication : possible strategy towards materials with high efficiency244th American Chemical Society National Meeting & Exposition, Symposium on Synthesis, Spectroscopy, Theory and Applications of Nanocrystals and Nanowires, Aug 2012, Philadelphia, United States
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hal-03317141
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Orientational and strain dependence of the mobility in silicon nanowires13th International Conference on Ultimate Integration on Silicon, ULIS 2012, 2012, Grenoble, France. pp.49-52, ⟨10.1109/ULIS.2012.6193354⟩
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hal-00801131
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[Invité] Multi-excitons dans les nanostructures de semiconducteursDeuxième édition des Journées Nationales du Photovoltaïque, JNPV 2012, Dec 2012, Chantilly, France
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hal-00797752
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Atomistic calculations of the mobility in ultimate Si (Ge) nanowires and carbon nanotubes6th International Meeting on Molecular Electronics, ElecMol'12, 2012, Grenoble, France
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hal-00797753
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A crown-ether-derivatized oligothiophene doubly attached on gold surface as cation-binding electrical switchable molecular junction6th International Meeting on Molecular Electronics, ElecMol'12, 2012, Grenoble, France
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hal-00797674
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Improved Green's functions algorithms for the modeling of semiconductor nanostructures and devicesMaterials Research Society Spring Meeting, MRS Spring 2011, Symposium YY : Computational semiconductor materials science, 2011, San Francisco, CA, United States
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hal-00807250
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Assessment of the notions of band offsets, wells, and barriers at nanoscale semiconductor heterojunctionsMaterials Research Society Fall Meeting, MRS Fall 2011, Symposium BB : Functional Nanowires and Nanotubes, 2011, Boston, MA, United States
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hal-00807232
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Mesure de l'énergie de Coulomb à l'échelle atomique14ème Forum des Microscopies à Sonde Locale, 2011, Ecully, France
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hal-00807249
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Optimization of carrier multiplication in quantum dots for more efficient solar cellsWorkshop on Semiconductor Nanostructures for Photovoltaics, Dec 2011, Hangzhou, China
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hal-00807253
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Carrier-Multiplication in Semiconductor Nanocrystals: a Long Controversy2011 ERI Symposium: Energy for the 21st Century, Oct 2011, Rochester, United States
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hal-03317139
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Coulomb energy determination of a single Si dangling bondHerodot Summer School, 2011, Cargese, France
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hal-00807579
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Electron-phonon scattering in Si and Ge : from bulk to nanodevicesInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011, 2011, Osaka, Japan. pp.47-50, ⟨10.1109/SISPAD.2011.6035046⟩
Communication dans un congrès
hal-00800089
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Ab initio calculation of the binding energy of impurities in semiconductors : application to silicon nanowiresMaterials Research Society Spring Meeting, MRS Spring 2011, Symposium YY : Computational semiconductor materials science, 2011, San Francisco, CA, United States
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hal-00807580
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Assessment of carrier multiplication in bulk PbS and PbSeMaterials Research Society Spring Meeting 2011, Symposium B : Third-generation and emerging solar-cell technologies, Apr 2011, San Francisco, United States
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hal-03317137
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Impurity and phonon scattering in silicon nanowiresMaterials Research Society Spring Meeting, MRS Spring 2011, Symposium EE : Semiconductor nanowires - From fundamentals to applications, 2011, San Francisco, CA, United States
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hal-00807586
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Optimization of carrier-multiplication for more efficient solar cells : the case of α-Sn quantum dotsMaterials Research Society Fall Meeting, MRS Fall 2011, Symposium I : Fundamental processes of solar harvesting in excitonic solar cells, Nov 2011, Boston, MA, United States. ⟨10.1021/nn202180u⟩
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hal-00807718
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[Invited] Carrier-multiplication in semiconductor nanocrystals : a long controversy3rd Energy Research Initiative Symposium : Energy for the 21st Century, Apr 2011, Rochester, NY, United States
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hal-00807221
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Impurity and phonon scattering in silicon nanowiresAmerican Physical Society March Meeting, APS March Meeting 2011, 2011, Dallas, TX, United States
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hal-00579042
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Coulomb energy determination of a single Si dangling bondWorkshop on Statistical Physics and Low Dimensional Systems, SPLDS 2011, 2011, Nancy, France
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hal-00807228
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A Kramers-Krönig analysis of the absorbance spectrum of colloidal quantum dots : calculation of the complex refractive indexEuropean Materials Research Society Spring Meeting, E-MRS Spring 2011, Symposium G : Semiconductor nanostructures towards electronic and optoelectronic device applications, 2011, Nice, France
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hal-00807230
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Optimization of carrier multiplication in quantum dots for more efficient solar cells: Theoretical aspectsSymposium on Optics and Alternative Energy Sources, 2011 APS Laser Science Annual Meeting, Oct 2011, San Jose, United States
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hal-03317138
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Carrier multiplication in bulk and nanocrystalline semiconductors: Mechanism, efficiency, and interest for solar cellsCECAM workshop on Empirical methods in semiconductor nano-structures design and modelling, Jun 2010, Manchester, United Kingdom
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hal-03317133
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Experimental and theoretical comparison of the optical properties of colloidal lead salt quantum dotsNanoscience with Nanocrystals International Conference, NaNaX4, 2010, Munich, Germany
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hal-00574397
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Relaxation of hot carriers in Si nanocrystalsE-MRS 2010 Spring Meeting Symposium J : Silicon-based nanophotonics, Jun 2010, Strasbourg, France
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hal-03317057
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Semiconductor nanostructures : recent theoretical resultsWorkshop on Nanostructures, Nano-optics and Nano-technologies, 3N Workshop, Jul 2010, Porquerolles, France
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hal-00574390
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Phonon scattering in silicon nanowiresWorkshop of the GDR coDFT : Electron-phonon interaction in metals, superconductors and semiconducting nanostructures, Nov 2010, Paris, France
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hal-00574391
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Quantamonde : QUANTum and Atomistic MOdeling of NanoDEvicesJournées du Réseau National en Nanosciences et en Nanotechnologies, J3N 2010, 2010, Lille, France
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Fast exciton relaxation and multiple exciton generation (MEG) in semiconductor nanocrystals : the role of defectsAmerican Physical Society March Meeting, 2009 APS March Meeting, Focus Session : Nanomaterials for Energy Applications I, Mar 2009, Pittsburgh, PA, United States
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hal-00575339
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Contribution à l'élargissement des pics de résonance de boîtes quantiques PbSe étudiées par spectroscopie tunnelForum des Microscopies à Sonde Locale, 2009, Hardelot, France
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hal-00575393
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Orbital-resolved polaron states in CdSe dots and rods probed by scanning tunnelling spectroscopyAmerican Physical Society March Meeting, 2009 APS March Meeting, Focus session : Transport Properties of Nanostructures I : Surface Assemblies and Films, 2009, Pittsburgh, PA, United States
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Quantum modelling of electronic properties of impurities in nanowiresAFSiD European Project Meeting (invited seminar), 2009, Delft, Netherlands
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hal-00575358
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Multi-exciton generation in bulk and nanocrystalline semiconductors : mechanism, efficiency, and interest for solar cells ?French & American Young Engineering Scientists Symposium 2009, YESS Nano 2009, Nov 2009, Paris, France
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hal-00575706
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[Invité] Nanofils de semiconducteurs : effets de confinement quantique et diélectrique22èmes Journées Surfaces-Interfaces, JSI 2008, Jan 2008, Grenoble, France
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hal-00811725
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Tunneling spectroscopy of semiconductor nanocrystals in superlatticesAmerican Chemical Society National Meeting, 2008, New Orleans, LA, United States
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hal-00362015
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Influence of the electronic structure and the multi-exciton spectral density on the multiple exciton generation in semiconductor nanocrystalsAmerican Physical Society March Meeting, Mar 2008, New Orleans, LA, United States. ⟨10.1103/PhysRevB.77.125340⟩
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hal-00361973
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Relaxations non radiatives dans les nanocristaux de semiconducteursJournées de la Matière Condensée, SFP, Jul 2008, Strasbourg, France
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hal-03317055
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Tunneling spectroscopy of semiconductor nanocrystals in superlatticesEcole thématique du CNRS ‘Nanoobjects in living cell, from physics to physiology', 2008, Villeneuve d'Ascq, France
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hal-00362018
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Theory of resonant energy transfer in Si nanocrystalsEMRS 2008 Spring Meeting Symposium C “Frontiers in silicon-based photonics”, May 2008, Strasbourg, France
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hal-03317052
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Influence of the electronic structure and the multi-exciton spectral density on the multiple exciton generation in semiconductor nanocrystalsCECAM Workshop on Critical Materials Issues in Photovoltaics : searching for solutions via theory and simulations, 2008, Lausanne, Switzerland. ⟨10.1103/PhysRevB.77.125340⟩
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hal-00811727
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Tunneling spectroscopy of semiconductor nanocrystals in superlatticesWorkshop on Statistical Physics and Low Dimensional Systems, 2008, Nancy, France
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hal-00362016
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Electronic properties of doped semiconductor nanowiresCECAM-PsiK Workshop on Structural, Electronic and Transport Properties of Quantum Wires, 2008, Lyon, France
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hal-00811726
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Electronic, optical and transport properties of semiconductor nanowires : theory and simulations397th Wilhelm and Else Heraeus Seminar on Semiconducting Nanowires : Physics, Materials and Devices, 2007, Bad Honnef, Germany
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hal-00367404
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Electronic and transport properties of semiconductor nanowires : theory and simulationInternational Conference on One-dimensional Nanomaterials, 2007, Malmö/Lund, Sweden
Communication dans un congrès
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Theory of multi-exponential photoluminescence decay of indirect gap semiconductor nanocrystalsMaterial Research Society Fall Meeting, Nov 2006, Boston, MA, United States
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Réseau organique, atome artificiel et liaison pendante silicium : apport de la spectroscopie STM10èmes Journées de la Matière Condensée, JMC10, 2006, Toulouse, France
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Running current through a single non resonant quantum state in silicon4th International Conference on Scanning Probe Spectroscopy and 1st International Workshop on Spin-Polarized Scanning Tunneling Microscopy, SPS'06 SPSTM-1, 2006, Hamburg, Germany
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Running current through a single non resonant quantum state in siliconEuropean Conference on Surface Science, ECOSS 24, 2006, Paris, France
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Optical properties and collective effects in charged arrays of semiconductor nanocrystalsEuropean Materials Research Society Spring Meeting, Symposium A : Current Trends in Nanoscience–from Materials to Applications, May 2006, Nice, France
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Electronic structure of donor and acceptor impurities in semiconductor nanowiresMaterial Research Society Fall Meeting, Nov 2006, Boston, MA, United States
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Collective excitations in charged nanocrystalsMaterials Research Society 2005 Fall Meeting, Nov 2005, Boston, MA, United States. ⟨10.1103/PhysRevB.72.195316⟩
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Impact ionization quantum yield in PbSe nanocrystalsMaterials Research Society 2005 Fall Meeting, Nov 2005, Boston, MA, United States
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Forster energy transfer between semiconductor nanocrystalsMaterials Research Society 2005 Fall Meeting, 2005, Boston, MA, United States
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Simulation of semiconductor nanoparticlesAmerican Physical Society March Meeting, 2005, Los Angeles, CA, United States
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hal-00126441
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Spectroscopie de nanocristaux de semiconducteurs : enjeux récents, études théoriquesCongrès général de la Société Française de Physique, 2005, Lille, France
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Combining ab initio and semiempirical approaches for scanning tunneling microscopy simulationsTrends in Nanotechnology, TNT 2005, 2005, Oviedo, Spain
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Optical properties of CdTe and CdSe nanocrystalsAmerican Physical Society March Meeting, Mar 2005, Los Angeles, CA, United States
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Theoretical study of radiative and non radiative recombination in semiconductor nanocrystalsPsi-k Conference, 2005, Schwäbisch Gmünd, Germany
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hal-00126455
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Quasi-particle gap, dielectric properties and electronic correlations in semiconductor nanostructuresWorkshop on Theory and Modeling of Electronic Excitations in Nanoscience, NANOEXC2004, 2004, Acquafredda di Maratea, Italy
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Self-assembled molecular rectifying diodes on siliconEuropean Materials Research Society Spring Meeting, 2004, Strasbourg, France
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hal-00140752
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Potentiel d'échange et de corrélation dans des nanostructures de semiconducteursRéunion du GDR-DFT, 2004, La Londe Les Maures, France
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Unusual quantum confinement in IV-VI materialsEuropean Materials Research Society Spring Meeting, May 2004, Strasbourg, France. ⟨10.1016/j.msec.2005.06.026⟩
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istex
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Self-assembled molecular rectifying diodes on silicon : synthesis, experimental and theoretical charge transport studies7th European Conference on Molecular Electronics, ECME 2003, Sep 2003, Avignon, France
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Experimental and theoretical charge transport studies in self-assembled molecular rectifying diodes on siliconMaterials Research Society Fall Meeting, 2003, Boston, MA, United States
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Charge transport in self-assembled molecular rectifying diodes on siliconWorkshop France-USA on Molecular-Scale Electronics, 2003, Paris, France
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Unusual density of states in brick-shaped PbSe nanocrystalsAmerican Physical Society March Meeting, 2003, Austin, TX, United States
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The effect of quantum confinement on the optical properties of semiconductor nanocrystalsMaterials Research Society Fall Meeting, 2003, Boston, MA, United States
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Self-assembled molecular rectifying diodesMaterials Research Society Spring Meeting, 2003, San Francisco, CA, United States
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Self-consistent tight-binding electronic structure of GaN/AlN pyramidal quantum dotsAmerican Physical Society March Meeting, 2003, Austin, TX, United States
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Experimental and theoretical charge transport studies in self-assembled molecular rectifying diodes on siliconFrench-USA Conference on Molecular-scale Electronics, 2003, Paris, France
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Self-assembled molecular rectifying diodes on silicon : synthesis, experimental and theoretical charge transport studies226th American Chemical Society National Meeting - Fall 2003, Sep 2003, New York, NY, United States
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Propriétés optiques des nanostructures de SiVIII Journées de la Matière Condensée, 2002, Marseille, France
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Confinement effects and tunneling through quantum dotsSymposium of Royal Society, 2002, London, United Kingdom. ⟨10.1098/rsta.2002.1127⟩
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istex
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Rectifying molecular diodes from self-assembly on siliconElectronic Materials Conference, 2002, Santa Barbara, CA, United States
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Current rectification from sigma-pi self-assembled monolayers on silicon5th International Conference on Functionalized n-electron Systems, 2002, Ulm, Germany
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Theory of silicon nanocrystalsNATO Advanced Research Workshop : Towards the first silicon laser, 2002, Trento, Italy
Communication dans un congrès
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Outils théoriques pour la structure électroniqueEcole thématique sur les nitrures, 2002, La Plagne, France
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Efficient and unusual intraband optical transitions in silicon nanocrystalsMaterials Research Society Fall Meeting, 2002, Boston, MA, United States
Communication dans un congrès
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Theory of electronic transport in semiconductor nanostructuresProceedings of the 2002 Materials Research Society Fall Meeting, Symposium F : Nanocrystalline Semiconductor Materials and Devices, Dec 2002, Boston, MA, United States. ⟨10.1557/PROC-638-F7.1.1⟩
Communication dans un congrès
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C16H33-Q-3CNQ, a molecular diode ?Electron Transport on the Molecular Scale, Feb 2001, Dresden, Germany
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Study of InAs/InP using grazing incidence diffraction anomalous fine structureEcole Prédoctorale sur la Physique Mésoscopique, 2001, Les Houches, France
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Tight binding methodsTutorial Courses 'Interface atomic level and properties of advanced materials', 2001, San Feliu de Guixols, Spain
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Physique des nanostructuresEcole Prédoctorale sur la Physique Mésoscopique, 2001, Les Houches, France
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Physics of Si nanostructuresMarch Meeting of the American Physical Society, Mar 2000, Minneapolis, United States
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Theory of Electronic Properties of Quantum DotsEcole d’Eté des Houches “Nanophysics and Nanoelectronics”, Jun 2000, Les Houches, France
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Effect of alkyl substituents on the adsorption of thienylenevinylene oligomers on the Si (100) surfaceProceedings of the 47th International Symposium of the American Vacuum Society, AVS 2000, 2000, Boston, MA, United States
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Propriétés et applications des nanocristaux de silicium et de germanium7èmes Journées de la Matière Condensée, 2000, Poitiers, France
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Théorie du transport électronique d'une diode moléculaire à base de quinolinium tricyanoquinodimethanide7èmes Journées de la Matière Condensée, 2000, Poitiers, France
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Theory of electronic transport in silicon nanostructuresMaterial Research Society Fall Meeting, 2000, Boston, MA, United States
Communication dans un congrès
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Electronic structure and rectification properties of a molecular diodeAsia-Pacific Surface and Interface Analysis Conference, APSIAC 2000, 2000, Beijing, China
Communication dans un congrès
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Excitonic and quasiparticle gaps in Si nanocrystalsCECAM Workshop on Excited States and Electronic Spectra, 2000, Lyon, France. ⟨10.1103/PhysRevLett.84.2457⟩
Communication dans un congrès
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Confinement quantique dans des nanocristaux de silicium et de germanium7èmes Journées de la Matière Condensée, 2000, Poitiers, France
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hal-00158950
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Nature of impurity states in amorphous siliconCECAM Workshop on Electronic and Optical Properties of Semiconducting Glasses, 2000, Lyon, France
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From porous silicon to semiconductor quantum dotsZhong Guan Cun for Condensed Matter Physics, 2000, Beijing, China
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Defects in NanostructuresInternational Conference on Defects in Semiconductors, Jul 1999, Berkeley, United States
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Theory of silicon nanoclustersRencontres nationales italiennes sur la luminescence du silicium, Oct 1998, Naples, Italy
Communication dans un congrès
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Structural dependence of optical bandgaps of silicon nanoclustersEMRS Symposium on "Light Emission from Silicon: Progress Towards Si-Based Optoelectronics", May 1998, Strasbourg, France
Communication dans un congrès
hal-03316945
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Systems of silicon nanocrystallites: from optical to transport propertiesInternational Materials Research Congress, Cancun’97, 1997, Cancun, Mexico
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hal-03316860
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Empirical tight-binding applied to silicon nanostructuresMRS Boston, 1997, Boston, United States
Communication dans un congrès
hal-03316943
v1
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Theory of silicon crystallitesPhysics of the luminescence of porous silicon, 1994, Les Houches, France
Communication dans un congrès
hal-03316846
v1
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Theory of the physical properties of Si nanocrystalsMRS Boston, 1994, Boston, United States
Communication dans un congrès
hal-03316852
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Theoretical descriptions of porous siliconE-MRS Strasbourg, 1994, Strasbourg, France
Communication dans un congrès
hal-03316848
v1
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Theory of rare-earth impurities in semiconductorsMRS Fall Meeting, Nov 1993, Boston, United States
Communication dans un congrès
hal-03316843
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Theory of the luminescence of porous siliconE-MRS Spring Meeting, May 1993, Strasbourg, France
Communication dans un congrès
hal-03316745
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The theory of rare-earth impurities in semiconductorsMRS 1993 Spring Meeting, 1993, San Francisco, United States
Communication dans un congrès
hal-03316744
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The theory of rare-earth impurities in semiconductors17th International Conference on Defects in Semiconductors, 1993, Gmunden, Austria
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hal-03316748
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Theory of the optical absorption and of the magnetic circular dichroïsm of antisite related defects in GaAs16th International Conference on Defects in Semiconductors, Lehigh University, 1991, Lehigh, United States
Communication dans un congrès
hal-03316739
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Theory of transition metal impurities in semiconductorsCongrès de l'EPS., 1988, Budapest, Hungary. pp.128
Communication dans un congrès
hal-03316736
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Relation between Schottky barrier heights, band-offsets and the energy levels of transition metal impuritiesNATO Workshop, 1988, Gärching, Germany
Communication dans un congrès
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Crystal facet engineering in MIR ZnO nanow34th ICPS, Jul 2018, Montpellier, France
Poster de conférence
hal-02010183
v1
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Etude théorique de nanofils semi-conducteursEditions Universitaires Européennes, pp.144, 2010
Ouvrages
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v1
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Group-IV Semiconductor Nanostructures - Materials Research Society 2006 Fall Symposium Proceedings, volume 958Materials Research Society, Warrendale, PA, USA, pp.L01-L11, 2007
Ouvrages
hal-00362383
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Group-IV Semiconductor Nanostructures - Materials Research Society 2004 Fall Symposium Proceedings, volume 832Materials Research Society, Warrendale, PA, USA, pp.F1.1 - F11.8, 2005
Ouvrages
hal-00131730
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Nanostructures: Theory and ModelingSpringer-Verlag, 2004, NanoScience and Technology book series (NANO), 978-3-642-05847-9
Ouvrages
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v1
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Transport électronique dans une molécule : une nouvelle diodeImages de la physique 2005, Spécial Année mondiale de la physique, Editions du CNRS, Paris, France, pp.186-191, 2005
Chapitre d'ouvrage
hal-00131700
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Nanostructures : theory and modellingNanoscience and technology, Springer, pp.1-297, 2004
Chapitre d'ouvrage
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NanoelectronicsNanostructured Materials, Springer US, p. 161-183, 2004, Electronic Materials: Science & Technology, 978-1-4020-7241-3 (Print) 978-0-306-47722-5 (Online). ⟨10.1007/0-306-47722-X_10⟩
Chapitre d'ouvrage
istex
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Theory of Si nanocrystalsPAVESI L., GAPONENKO S., and DAL NEGRO L. Towards the first silicon laser, Kluwer Academic Publishers, pp.243-260, 2003, 978-1-4020-1194-8. ⟨10.1007/978-94-010-0149-6_22⟩
Chapitre d'ouvrage
istex
hal-00131749
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Porous silicon modelled as idealised quantum dotsCANHAM L. Properties of porous silicon, The Institution of Electrical Engineers, London, UK, pp.212, 1997
Chapitre d'ouvrage
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Theory of the radiative and non radiative processes in silicon nanocrystallitesWILLARDSON R.K., WEBER E., LOCKWOOD D. Light emissions in silicon : from physics to devices, Academic Press, London, UK, pp.253, 1997, ⟨10.1016/S0080-8784(08)62505-3⟩
Chapitre d'ouvrage
hal-00132030
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Theory of optical properties and recombination processes in porous siliconAMATO G., DELERUE C., VON BARDEBEN H.J. Structural and optical properties of porous silicon nanostructures, Gordon and Breach Science Publishers, pp.187, 1997
Chapitre d'ouvrage
hal-00132029
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Détecteur infrarouge semi-conducteur et son procédé de fabricationFrance, N° de brevet: FR2791474 (A1) 2000-09-29. 2000
Brevet
hal-00372676
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Molecular rectifying diodes from self-assembly on silicon2003
Pré-publication, Document de travail
hal-00000385
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