Christophe Delerue
340
Documents
Researcher identifiers
christophe-delerue
- ResearcherId : E-9949-2012
-
0000-0002-0427-3001
- Google Scholar : https://scholar.google.fr/citations?user=IqaKXFwAAAAJ&hl=fr
- IdRef : 035741163
Presentation
**Christophe Delerue**, born in 1963
Email: christophe.delerue@iemn.fr
Position: CNRS Research Director (DR1).
Laboratory: IEMN - Institute of Electronics, Microelectronics and Nanotechnology, Villeneuve d'Ascq (France). Website: <http://www.iemn.fr>
### Training
1986: ISEN Engineering Degree.
1986: Master's Degree in Materials Science, University of Lille.
1989: PhD in Materials Science, University of Lille.
1998: Habilitation to Direct Research, University of Lille.
### Professional experience
1989-2002: CNRS Research Fellow.
2002-2011: Research Director 2nd class, CNRS.
2011-: Research Director 1st class, CNRS.
2021-: Research Director Exceptional class, CNRS.
2012-2013: Debye Professor, University of Utrecht, Netherlands.
### Responsibilities
1998-2012: Head of the Physics Group of the IEMN.
2002-2006: Coordinator of the European Network Nanospectra.
2006-2009: Director of the GDR DFT++ (Electronic Structure, DFT).
2020-: Deputy Director of the IEMN - Scientific Director.
### Scientific fields
Theoretical physics and numerical simulation. Semiconductors, nanostructures (quantum boxes, nanocrystals, nanowires), ultimate transistors, quantum components, lasers, molecular electronics, topological insulators. Transport and quantum optics.
### Publications & Impact
<https://www.webofscience.com/wos/author/rid/E-9949-2012>
### Monograph
C. Delerue & M. Lannoo, "Nanostructures: Theory and Modelling", Springer (2004).
### Awards
2007: Ancel Prize of the French Physical Society.
2012: 3rd Bull Joseph Fourier Prize (with Y.M. Niquet and F. Triozon).
### Editorial responsibility
2003-2008: Co-editor and then "advisory editor" of the magazine Europhysics Letters.
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Theoretical studies on PbS nanocrystals for photodetector applicationsColloidal Semiconductor Nanocrystals - Gordon Research Conference, Jul 2022, Les Diablerets, Switzerland
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hal-03787101v1
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Theoretical Optical Performances of Semiconductor Nanocrystals for Image Sensors and Photovoltaics ApplicationsMRS Fall Meeting, Materials Research Society, Nov 2022, Boston (MA), United States
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hal-03951009v1
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Toward nanocrystal-based active nanophotonic devicesnanoGe Spring Meeting 2022, Mar 2022, Online, Spain. ⟨10.29363/nanoge.nsm.2022.029⟩
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hal-03641931v1
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Toward nanocrystal-based active nanophotonic devicenanoGe Fall Meeting 2021, Oct 2021, Online, Spain. ⟨10.29363/nanoge.nfm.2021.054⟩
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hal-03642038v1
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Intrinsic carrier mobility of Graphene, CNT, and GNRGraphene2021, Oct 2021, Grenoble, France
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hal-03587596v1
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Pushing the limit of lithography for patterning two-dimensional lattices in III-V semiconductor quantum wells5th IEEE Electron Devices Technology & Manufacturing Conference, EDTM 2021, Apr 2021, Chengdu, China. pp.1-3, ⟨10.1109/EDTM50988.2021.9420884⟩
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hal-03261329v1
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Optical absorption quantization in thin films of semiconductorsESSCIRC ESSDERC 2021 Educational Events, Sep 2021, Grenoble, France
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hal-03349301v1
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Bandes plates et cônes de Dirac dans des réseaux électroniques artificiels en nids d’abeilles34èmes Journées Surfaces & Interfaces, JSI 2020, Jan 2020, Paris, France
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hal-03317736v1
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Quantized optical absorption in quasi-2D semiconductors: Theory, comparison with experiments and open questionsnanoGe Fall Meeting, NGFM20, Oct 2020, Barcelone, Spain
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hal-02977041v1
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Optical absorptivity in superlattices of nanocrystals14th IEEE Nanotechnology Materials and Devices Conference, NMDC 2019, Oct 2019, Stockholm, Sweden
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hal-03317731v1
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Quantum and dielectric confinement effects on the absorption strength in semiconductorsnanoGe Fall Meeting, NGFM19, Symposium #Sol2D19 - Two Dimensional Layered Semiconductors, Nov 2019, Berlin, Germany
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Metallic ZnO nanocrystals for Mid IR plasmonicsEMN Barcelona Meeting on semiconductors-ICAS, Aug 2019, Barcelone, Spain
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hal-02269801v1
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Theory of optical absorption in semiconductor nanocrystals: from single nanocrystals to superlatticesnanoGe Fall Meeting, NGFM19, Nov 2019, Berlin, Germany
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Non-linear optical properties of semiconductor nanocrystals37th European Materials Research Society Spring Meeting, E-MRS Spring 2019, Symposium P - Dielectric nanocomposites for energy, environment and health: from fundamental to devices, May 2019, Nice, France
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hal-03317729v1
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Theory of Optical Properties of 2D Semiconductor Nanocrystal LatticesInternational Conference on “Nanophotonics by Nanocrystals”, nanoGe Fall Meeting, Oct 2018, Torremolinos, Malaga, Spain
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hal-03317728v1
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Theory of Localized Surface Plasmon Resonance in Doped Semiconductor NanocrystalsInternational Conference on Fundamental Processes in Semiconductor Nanocrystals, nanoGe Fall Meeting 2018, Oct 2018, Torremolinos, Malaga, Spain
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hal-03317726v1
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Metallic ZnO nanocrystals for Mid IR plasmonicsNanomaterialstrends 2018, Univ. Cattolica del Sacro Cuore Brescia, Sep 2018, Brescia, Italy
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hal-01875130v1
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LEGO® bricks at the nanoscale7th International Conference on Nanostructures and Nanomaterials Self-Assembly, NanoSEA 2018, Jul 2018, Carqueiranne, France
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hal-03317611v1
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ZnO nanowire facet transformation induced by Ga dopingIWZnO 2018, Sep 2018, varsovie, Poland
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hal-02010195v1
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Ga and Al degeneratly doped ZnO Nanocrystals for Mid IR plasmonicsIWZnO2018, Sep 2018, Varsovie, Poland
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hal-01875129v1
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Crystal facet engineering in Ga-doped ZnO nanowires for Mid-IR plasmonicsTCM2018, Oct 2018, Crete, Greece
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hal-02010197v1
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Theory of Si nanocrystals (co)doped with P and B impuritiesEMRS Fall Meeting, Symposium T: Silicon, Germanium, Diamond and Carbon Nanostructures and Their Nanocomposites with Other Materials, Sep 2017, Warsaw, Poland
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hal-03317609v1
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Colloidal semiconductor nanocrystal: from single objects to artificial solidsGeneral Scientific Meeting of the Belgian Physical Society, BPS Meeting 2017, May 2017, Mons, Belgium
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hal-03317605v1
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Electronic structure and optical properties of 2D nanostructured semiconductorsNanoGe September Meeting, Sep 2017, Barcelona, Spain
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hal-03317607v1
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Manipulating spin polarization and carrier mobility in zigzag graphene ribbons using an electric field2016 IEEE International Electron Devices Meeting (IEDM), Dec 2016, San Francisco, United States. pp.36.3.1-36.3.4
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hal-02143466v1
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Band structure of 2D nanomaterialsInternational Conference on Solution-based Two-dimensional Nanomaterials, Sol2D16, Sep 2016, Berlin, Germany
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hal-03317603v1
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A study of diffusive transport in 14nm FDSOI MOSFET: NEGF versus QDD2016 ESSDERC - 46th European Solid-State Device Research Conference, Sep 2016, Lausanne, Switzerland. pp.424-427, ⟨10.1109/ESSDERC.2016.7599676⟩
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hal-02065220v1
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Electronic transport in 1D nanostructures5th International Conference “Smart and Multifunctional Materials, Structures and Systems”, CIMTEC 2016. Symposium G - Multifunctional Inorganic One-dimensional Nanostructures: Status and Potential, Jun 2016, Perugia, Italy
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hal-03317602v1
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Localized surface plasmon resonance of boron- and phosphorus-doped silicon nanocrystalsEuropean Materials Research Society Spring Meeting, E-MRS Spring 2015, Symposium H - Nanoparticles in dielectric matrix for electronics and optics: from the fabrication to the devices, May 2015, Lille, France
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hal-03317594v1
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(Invited) Topological States in Multi-Orbital Honeycomb Lattices of HgTe (CdTe) Quantum Dots228th Meeting of the Electrochemical Society, Oct 2015, Phoenix, United States. pp.81-88, ⟨10.1149/06905.0081ecst⟩
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hal-02906822v1
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Full-zone k · p parametrization for III-As materials2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2015, Washington DC, United States. pp.28-31
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hal-02138887v1
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Preparation and study of semiconductors with a honeycomb nanogeometryInternational Conference on Fundamental Processes in Semiconductor Nanocrystals, FQDots14, Sep 2014, Oxford, United Kingdom
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hal-03317544v1
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Preparation and study of 2-D semiconductors with Dirac type bands due to the honeycomb nanogeometrySPIE Photonics West, OPTO 2014, Conference 8981 - Physics, Simulation, and Photonic Engineering of Photovoltaic Devices III, 2014, San Francisco, CA, United States. ⟨10.1117/12.2042882⟩
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hal-00964400v1
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Hyperspectral analysis of ultrafast hot carrier dynamics in Pb-chalcogenide nanocrystals : a case for slow cooling8th International Conference on Quantum Dots, QD 2014, 2014, Pisa, Italy
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hal-01015211v1
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Optical properties of HgTe nanocrystalsEuropean Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium F - Established and emerging nanocolloids : from synthesis & characterization to applications, 2014, Lille, France
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hal-01015327v1
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[Invited] Phonon-limited transport in Si, Ge, Ge/Si nanowiresNanowires 2014, Sep 2014, Eindhoven, Netherlands
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hal-01044673v1
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From semiconductor nanocrystals to artificial graphene and topological insulatorEuropean Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium F - Established and emerging nanocolloids : from synthesis & characterization to applications, 2014, Lille, France
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hal-00966143v1
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Room-temperature quantum spin Hall effect in HgTe honeycomb superlatticesAmerican Physical Society March Meeting, APS March Meeting 2014, Session B31 - Focus Session : Computational Discovery and Design of New Materials II, 2014, Denver, CO, United States
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hal-00922589v1
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Thresholdless optical gain using colloidal HgTe nanocrystalsConference on Lasers and Electro-Optics, CLEO 2014, Laser Science to Photonic Applications, 2014, San Jose, CA, United States. paper FTh4C.4, 2 p., ⟨10.1364/CLEO_QELS.2014.FTh4C.4⟩
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hal-00974546v1
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Phosphorus-hyperdoped Si nanocrystals : a model for localized surface plasmon resonanceEuropean Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium X - Materials research for group IV semiconductors : growth, characterization and technological developments, 2014, Lille, France
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hal-00961394v1
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[Invited] From semiconductor nanocrystals to artificial graphene and topological insulatorColloidal Quantum Dots and Nanocrystals, CQDN 2014, Jul 2014, Manchester, United Kingdom
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hal-01044694v1
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Image and many-body effects in ultra-thin gate insulator MOSFET with In0.53Ga0.47As channel material and their influence on gate leakage current17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, 2014, Villeneuve d'Ascq, France. 5 p
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hal-01020291v1
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Near-thresholdless optical gain using colloidal HgTe quantum dots30 years of Colloidal Quantum Dots, 2014, Paris, France
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hal-01015227v1
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A computational model for the investigation of phonon-limited charge transport in 2D systems17th International Workshop on Computational Electronics, IWCE 2014, 2014, Paris, France. pp.227-228
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hal-01005699v1
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Semiconductors with dimensionality between zero and twoWorkshop "Designing Dirac carriers in semiconductor honeycomb superlattices", 2014, Utrecht, Netherlands
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hal-01015322v1
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Hot-carrier relaxation and carrier multiplication in Si nanostructuresEuropean Materials Research Society Spring Meeting, E-MRS Spring 2013, Symposium D - Advanced inorganic materials and structures for photovoltaics, May 2013, Strasbourg, France
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hal-03317241v1
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Transport properties of strained nanowires and devicesMaterials Research Society Spring Meeting, MRS Spring 2013, Symposium R : Nanostructured Semiconductors and Nanotechnology, May 2013, San Francisco, United States
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hal-03317308v1
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Graphène artificiel à fort couplage spin-orbite formé par auto-assemblage de nanocristaux de semiconducteursJournées Boîtes Quantiques 2013, JBQ 2013, 2013, Paris, France
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hal-00922582v1
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[Invited] Artificial graphene superlattices made of semiconductor nanocrystalsGraphene Day, May 2013, Utrecht, Netherlands
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hal-00823435v1
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How do surfaces control the electrostatics of semiconductor nanostructures ?Materials Research Society Spring Meeting, MRS Spring 2013, Symposium Q : Surfaces of Nanoscale Semiconductors, Apr 2013, San Francisco, United States
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hal-03317242v1
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Graphène artificiel à fort couplage spin-orbite formé par auto-assemblage de nanocristaux de semiconducteursRéunion plénière du GDR 3325 CoDFT, 2013, Guidel-Plages, France
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hal-00819693v1
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[Invited] Electronic doping : from bulk semiconductors to nanocrystalsWorkshop on Coupling between Nanocrystals and Dopants, GdR 3531 NACRE, 2013, Villiers-sur-Mer, France
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hal-00878825v1
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Dirac fermions and topological phases in honeycomb superlattices of semiconductor nanocrystalsGordon Research Conference on Clusters, Nanocrystals & Nanostructures - From Fundamental Chemical and Physical Processes to Applications, Aug 2013, South Hadley, United States
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hal-03317233v1
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Electronic and transport properties of semiconductor nanowires5th International Conference on One-dimensional Nanomaterials, ICON13, Sep 2013, Annecy, France
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hal-03317239v1
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[Invited] Strain effects on carrier mobility in Si and Ge nanowires5ème Assemblée Générale du GdR Nanofils Semiconducteurs, 2013, Saint-Martin-de-Londres, France
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hal-00811810v1
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[Invited] Nanocrystal self-assembly as a route to atomically coherent 2D semiconductor superlattices with Dirac-type charge carriersWorkshop Supranano : Self-Assemblies, Jun 2013, Paris, France
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hal-00878824v1
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Electron-phonon scattering in silicon nanowiresMaterials Research Society Spring Meeting, MRS Spring 2012, Symposium AA : Inorganic Nanowires and Nanotubes - Synthesis, Properties, and Device Applications, 2012, San Francisco, CA, United States
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hal-00798125v1
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Band offsets, wells and barriers in nanowire heterostructures : is the simple ''square wells and barriers'' model always valid ?Materials Research Society Spring Meeting, MRS Spring 2012, Symposium AA : Inorganic Nanowires and Nanotubes - Synthesis, Properties, and Device Applications, 2012, San Francisco, CA, United States
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hal-00797756v1
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Band offsets : nano is not bulk15th International Workshop on Computational Electronics, IWCE-15, 2012, Madison, WI, United States. pp.3-4
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hal-00801124v1
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Atomistic calculations of the mobility in ultimate Si (Ge) nanowires and carbon nanotubes6th International Meeting on Molecular Electronics, ElecMol'12, 2012, Grenoble, France
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hal-00797753v1
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Orientational and strain dependence of the mobility in silicon nanowires13th International Conference on Ultimate Integration on Silicon, ULIS 2012, 2012, Grenoble, France. pp.49-52, ⟨10.1109/ULIS.2012.6193354⟩
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hal-00801131v1
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[Invité] Multi-excitons dans les nanostructures de semiconducteursDeuxième édition des Journées Nationales du Photovoltaïque, JNPV 2012, Dec 2012, Chantilly, France
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hal-00797752v1
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A crown-ether-derivatized oligothiophene doubly attached on gold surface as cation-binding electrical switchable molecular junction6th International Meeting on Molecular Electronics, ElecMol'12, 2012, Grenoble, France
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hal-00797674v1
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Influence of strains on the electron and hole mobility in silicon nanowires15th International Workshop on Computational Electronics, IWCE-15, 2012, Madison, WI, United States. pp.203-204
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hal-00801139v1
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[Invited] Carrier multiplication in quantum dots for more efficient solar cells4èmes Journées de Physique Théorique, May 2012, Grenoble, France
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hal-00797754v1
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Carrier multiplication : possible strategy towards materials with high efficiency244th American Chemical Society National Meeting & Exposition, Symposium on Synthesis, Spectroscopy, Theory and Applications of Nanocrystals and Nanowires, Aug 2012, Philadelphia, United States
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hal-03317141v1
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Efficiency of carrier-multiplication in semiconductor quantum dots : theory and simulationsSPIE Optics + Photonics, Conference 8471 : Next Generation (Nano) Photonic and Cell Technologies for Solar Energy Conversion III, Aug 2012, San Diego, United States
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hal-03317142v1
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Ultrafast transient absorption spectroscopy of HgTe quantum dotsOptics & Photonics joint with Quantum Electronics & Photonics, Photon 12/QEP-20, 2012, Durham, United Kingdom
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hal-00798255v1
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Transport properties of strained silicon nanowires42nd European Solid-State Device Research Conference, ESSDERC 2012, 2012, Bordeaux, France. pp.session C3L-G, 290-293, ⟨10.1109/ESSDERC.2012.6343390⟩
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hal-00801132v1
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Impurity and phonon scattering in silicon nanowiresAmerican Physical Society March Meeting, APS March Meeting 2011, 2011, Dallas, TX, United States
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hal-00579042v1
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Ab initio calculation of the binding energy of impurities in semiconductors : application to silicon nanowiresMaterials Research Society Spring Meeting, MRS Spring 2011, Symposium YY : Computational semiconductor materials science, 2011, San Francisco, CA, United States
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hal-00807580v1
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Optimization of carrier-multiplication for more efficient solar cells : the case of α-Sn quantum dotsMaterials Research Society Fall Meeting, MRS Fall 2011, Symposium I : Fundamental processes of solar harvesting in excitonic solar cells, Nov 2011, Boston, MA, United States. ⟨10.1021/nn202180u⟩
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hal-00807718v1
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[Invited] Carrier-multiplication in semiconductor nanocrystals : a long controversy3rd Energy Research Initiative Symposium : Energy for the 21st Century, Apr 2011, Rochester, NY, United States
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hal-00807221v1
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Impurity and phonon scattering in silicon nanowiresMaterials Research Society Spring Meeting, MRS Spring 2011, Symposium EE : Semiconductor nanowires - From fundamentals to applications, 2011, San Francisco, CA, United States
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hal-00807586v1
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Assessment of carrier multiplication in bulk PbS and PbSeMaterials Research Society Spring Meeting 2011, Symposium B : Third-generation and emerging solar-cell technologies, Apr 2011, San Francisco, United States
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hal-03317137v1
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Electron-phonon scattering in Si and Ge : from bulk to nanodevicesInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011, 2011, Osaka, Japan. pp.47-50, ⟨10.1109/SISPAD.2011.6035046⟩
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hal-00800089v1
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Carrier-Multiplication in Semiconductor Nanocrystals: a Long Controversy2011 ERI Symposium: Energy for the 21st Century, Oct 2011, Rochester, United States
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hal-03317139v1
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Assessment of the notions of band offsets, wells, and barriers at nanoscale semiconductor heterojunctionsMaterials Research Society Fall Meeting, MRS Fall 2011, Symposium BB : Functional Nanowires and Nanotubes, 2011, Boston, MA, United States
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Mesure de l'énergie de Coulomb à l'échelle atomique14ème Forum des Microscopies à Sonde Locale, 2011, Ecully, France
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hal-00807249v1
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Optimization of carrier multiplication in quantum dots for more efficient solar cellsWorkshop on Semiconductor Nanostructures for Photovoltaics, Dec 2011, Hangzhou, China
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hal-00807253v1
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Coulomb energy determination of a single Si dangling bondHerodot Summer School, 2011, Cargese, France
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hal-00807579v1
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Optimization of carrier multiplication in quantum dots for more efficient solar cells: Theoretical aspectsSymposium on Optics and Alternative Energy Sources, 2011 APS Laser Science Annual Meeting, Oct 2011, San Jose, United States
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hal-03317138v1
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Coulomb energy determination of a single Si dangling bondWorkshop on Statistical Physics and Low Dimensional Systems, SPLDS 2011, 2011, Nancy, France
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hal-00807228v1
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A Kramers-Krönig analysis of the absorbance spectrum of colloidal quantum dots : calculation of the complex refractive indexEuropean Materials Research Society Spring Meeting, E-MRS Spring 2011, Symposium G : Semiconductor nanostructures towards electronic and optoelectronic device applications, 2011, Nice, France
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hal-00807230v1
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Improved Green's functions algorithms for the modeling of semiconductor nanostructures and devicesMaterials Research Society Spring Meeting, MRS Spring 2011, Symposium YY : Computational semiconductor materials science, 2011, San Francisco, CA, United States
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hal-00807250v1
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Semiconductor nanostructures : recent theoretical resultsWorkshop on Nanostructures, Nano-optics and Nano-technologies, 3N Workshop, Jul 2010, Porquerolles, France
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hal-00574390v1
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Quantamonde : QUANTum and Atomistic MOdeling of NanoDEvicesJournées du Réseau National en Nanosciences et en Nanotechnologies, J3N 2010, 2010, Lille, France
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hal-00574415v1
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Relaxation of hot carriers in Si nanocrystalsE-MRS 2010 Spring Meeting Symposium J : Silicon-based nanophotonics, Jun 2010, Strasbourg, France
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hal-03317057v1
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Phonon scattering in silicon nanowiresWorkshop of the GDR coDFT : Electron-phonon interaction in metals, superconductors and semiconducting nanostructures, Nov 2010, Paris, France
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hal-00574391v1
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Experimental and theoretical comparison of the optical properties of colloidal lead salt quantum dotsNanoscience with Nanocrystals International Conference, NaNaX4, 2010, Munich, Germany
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hal-00574397v1
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Carrier multiplication in bulk and nanocrystalline semiconductors: Mechanism, efficiency, and interest for solar cellsCECAM workshop on Empirical methods in semiconductor nano-structures design and modelling, Jun 2010, Manchester, United Kingdom
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hal-03317133v1
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Multi-exciton generation in bulk and nanocrystalline semiconductors : mechanism, efficiency, and interest for solar cells ?French & American Young Engineering Scientists Symposium 2009, YESS Nano 2009, Nov 2009, Paris, France
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hal-00575706v1
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Contribution à l'élargissement des pics de résonance de boîtes quantiques PbSe étudiées par spectroscopie tunnelForum des Microscopies à Sonde Locale, 2009, Hardelot, France
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hal-00575393v1
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Quantum modelling of electronic properties of impurities in nanowiresAFSiD European Project Meeting (invited seminar), 2009, Delft, Netherlands
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hal-00575358v1
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Orbital-resolved polaron states in CdSe dots and rods probed by scanning tunnelling spectroscopyAmerican Physical Society March Meeting, 2009 APS March Meeting, Focus session : Transport Properties of Nanostructures I : Surface Assemblies and Films, 2009, Pittsburgh, PA, United States
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hal-00575359v1
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Fast exciton relaxation and multiple exciton generation (MEG) in semiconductor nanocrystals : the role of defectsAmerican Physical Society March Meeting, 2009 APS March Meeting, Focus Session : Nanomaterials for Energy Applications I, Mar 2009, Pittsburgh, PA, United States
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hal-00575339v1
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Theory of resonant energy transfer in Si nanocrystalsEMRS 2008 Spring Meeting Symposium C “Frontiers in silicon-based photonics”, May 2008, Strasbourg, France
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hal-03317052v1
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Tunneling spectroscopy of semiconductor nanocrystals in superlatticesWorkshop on Statistical Physics and Low Dimensional Systems, 2008, Nancy, France
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hal-00362016v1
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Influence of the electronic structure and the multi-exciton spectral density on the multiple exciton generation in semiconductor nanocrystalsCECAM Workshop on Critical Materials Issues in Photovoltaics : searching for solutions via theory and simulations, 2008, Lausanne, Switzerland. ⟨10.1103/PhysRevB.77.125340⟩
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hal-00811727v1
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Tunneling spectroscopy of semiconductor nanocrystals in superlatticesEcole thématique du CNRS ‘Nanoobjects in living cell, from physics to physiology', 2008, Villeneuve d'Ascq, France
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hal-00362018v1
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Tunneling spectroscopy of semiconductor nanocrystals in superlatticesAmerican Chemical Society National Meeting, 2008, New Orleans, LA, United States
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hal-00362015v1
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Influence of the electronic structure and the multi-exciton spectral density on the multiple exciton generation in semiconductor nanocrystalsAmerican Physical Society March Meeting, Mar 2008, New Orleans, LA, United States. ⟨10.1103/PhysRevB.77.125340⟩
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hal-00361973v1
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Electronic properties of doped semiconductor nanowiresCECAM-PsiK Workshop on Structural, Electronic and Transport Properties of Quantum Wires, 2008, Lyon, France
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hal-00811726v1
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Relaxations non radiatives dans les nanocristaux de semiconducteursJournées de la Matière Condensée, SFP, Jul 2008, Strasbourg, France
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hal-03317055v1
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[Invité] Nanofils de semiconducteurs : effets de confinement quantique et diélectrique22èmes Journées Surfaces-Interfaces, JSI 2008, Jan 2008, Grenoble, France
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hal-00811725v1
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Electronic and transport properties of semiconductor nanowires : theory and simulationInternational Conference on One-dimensional Nanomaterials, 2007, Malmö/Lund, Sweden
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hal-00367403v1
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Electronic, optical and transport properties of semiconductor nanowires : theory and simulations397th Wilhelm and Else Heraeus Seminar on Semiconducting Nanowires : Physics, Materials and Devices, 2007, Bad Honnef, Germany
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hal-00367404v1
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Running current through a single non resonant quantum state in silicon4th International Conference on Scanning Probe Spectroscopy and 1st International Workshop on Spin-Polarized Scanning Tunneling Microscopy, SPS'06 SPSTM-1, 2006, Hamburg, Germany
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hal-00127890v1
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Electronic structure of donor and acceptor impurities in semiconductor nanowiresMaterial Research Society Fall Meeting, Nov 2006, Boston, MA, United States
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hal-00127892v1
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Optical properties and collective effects in charged arrays of semiconductor nanocrystalsEuropean Materials Research Society Spring Meeting, Symposium A : Current Trends in Nanoscience–from Materials to Applications, May 2006, Nice, France
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hal-00244033v1
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Running current through a single non resonant quantum state in siliconEuropean Conference on Surface Science, ECOSS 24, 2006, Paris, France
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hal-00127916v1
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Réseau organique, atome artificiel et liaison pendante silicium : apport de la spectroscopie STM10èmes Journées de la Matière Condensée, JMC10, 2006, Toulouse, France
Conference papers
hal-00127920v1
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Theory of multi-exponential photoluminescence decay of indirect gap semiconductor nanocrystalsMaterial Research Society Fall Meeting, Nov 2006, Boston, MA, United States
Conference papers
hal-00127919v1
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Spectroscopie de nanocristaux de semiconducteurs : enjeux récents, études théoriquesCongrès général de la Société Française de Physique, 2005, Lille, France
Conference papers
hal-00126454v1
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Forster energy transfer between semiconductor nanocrystalsMaterials Research Society 2005 Fall Meeting, 2005, Boston, MA, United States
Conference papers
hal-00126434v1
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Simulation of semiconductor nanoparticlesAmerican Physical Society March Meeting, 2005, Los Angeles, CA, United States
Conference papers
hal-00126441v1
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Optical properties of CdTe and CdSe nanocrystalsAmerican Physical Society March Meeting, Mar 2005, Los Angeles, CA, United States
Conference papers
hal-00126440v1
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Theoretical study of radiative and non radiative recombination in semiconductor nanocrystalsPsi-k Conference, 2005, Schwäbisch Gmünd, Germany
Conference papers
hal-00126455v1
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Combining ab initio and semiempirical approaches for scanning tunneling microscopy simulationsTrends in Nanotechnology, TNT 2005, 2005, Oviedo, Spain
Conference papers
hal-00126433v1
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Impact ionization quantum yield in PbSe nanocrystalsMaterials Research Society 2005 Fall Meeting, Nov 2005, Boston, MA, United States
Conference papers
hal-00126443v1
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Collective excitations in charged nanocrystalsMaterials Research Society 2005 Fall Meeting, Nov 2005, Boston, MA, United States. ⟨10.1103/PhysRevB.72.195316⟩
Conference papers
hal-00126435v1
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Self-assembled molecular rectifying diodes on siliconEuropean Materials Research Society Spring Meeting, 2004, Strasbourg, France
Conference papers
hal-00140752v1
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Potentiel d'échange et de corrélation dans des nanostructures de semiconducteursRéunion du GDR-DFT, 2004, La Londe Les Maures, France
Conference papers
hal-00141288v1
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Unusual quantum confinement in IV-VI materialsEuropean Materials Research Society Spring Meeting, May 2004, Strasbourg, France. ⟨10.1016/j.msec.2005.06.026⟩
Conference papers
hal-00141286v1
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Quasi-particle gap, dielectric properties and electronic correlations in semiconductor nanostructuresWorkshop on Theory and Modeling of Electronic Excitations in Nanoscience, NANOEXC2004, 2004, Acquafredda di Maratea, Italy
Conference papers
hal-00141287v1
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Self-assembled molecular rectifying diodesMaterials Research Society Spring Meeting, 2003, San Francisco, CA, United States
Conference papers
hal-00146173v1
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Experimental and theoretical charge transport studies in self-assembled molecular rectifying diodes on siliconFrench-USA Conference on Molecular-scale Electronics, 2003, Paris, France
Conference papers
hal-00146177v1
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Self-consistent tight-binding electronic structure of GaN/AlN pyramidal quantum dotsAmerican Physical Society March Meeting, 2003, Austin, TX, United States
Conference papers
hal-00146640v1
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The effect of quantum confinement on the optical properties of semiconductor nanocrystalsMaterials Research Society Fall Meeting, 2003, Boston, MA, United States
Conference papers
hal-00146644v1
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Charge transport in self-assembled molecular rectifying diodes on siliconWorkshop France-USA on Molecular-Scale Electronics, 2003, Paris, France
Conference papers
hal-00146645v1
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