Christophe PALERMO
Publications
Publications
Experimental and theoretical investigation of optically excited THz plasma waves in submicron InGaA HEMTsEuropean Optical Society Annual Meeting (EOSAM 2008), 2008, Paris, France. Actes de Journées Nationales Du Réseau Doctoral de Micro-électronique (JNRDM) |
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Monte Carlo Simulation of THz Radiation Detection in GaN MOSFET n + nn + Channel with Uncentered Gate in n-regionThe 20th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures, J. Bird, 2017, Buffalo, United States. pp.012013, ⟨10.1088/1742-6596/906/1/012013⟩ |
Monte Carlo simulation of THz noise and generation under electron cooling in wurtzite GaN MOSFET at room temperature2017 International Conference on Noise and Fluctuations (ICNF), Jun 2017, Vilnius, Lithuania. pp.1-4, ⟨10.1109/ICNF.2017.7986004⟩ |
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Cooling effects in noise temperature spectrum2017 International Conference on Noise and Fluctuations (ICNF), Jun 2017, Vilnius, Lithuania. pp.1-3, ⟨10.1109/ICNF.2017.7986009⟩ |
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Monte Carlo calculation of In<inf>0.53</inf>Ga<inf>0.47</inf>As and InAs noise parameters2017 International Conference on Noise and Fluctuations (ICNF), Jun 2017, Vilnius, Lithuania. pp.1-4, ⟨10.1109/ICNF.2017.7985941⟩ |
Analysis of THz detection saturation processes in InGaAs-based HEMTs2016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz), Sep 2016, Copenhagen, Denmark. pp.1-2 |
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Stepped current voltage relation and THz oscillations in GaN MOSFET due to optical phonon emission : Monte Carlo simulation19th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures, 2015, Salamanca, Spain. ⟨10.1088/1742-6596/647/1/012034⟩ |
Plasmonic Noise of Field-Effect Transistors Operating at Terahertz Frequencies7th Int. Conf. On Unsolved Problems on Noise, UPoN 2015, 2015, Barcelone, Spain |
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Drain current noise in GaN MOSFETs at THz generation conditions2015 International Conference on Noise and Fluctuations (ICNF), Jun 2015, Xian, China. pp.1-4, ⟨10.1109/ICNF.2015.7288624⟩ |
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Hydrodynamic determination of the intrinsic small-signal equivalent circuit of HEMTsNoise and Fluctuations ICNF, 2015 International Conference, 2015, Xi'an, China. ⟨10.1109/ICNF.2015.7288601⟩ |
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Hybrid plasma modes in transistors: linear and non-linear responses19th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures, 2015, Salamanca, Spain. pp.012035, ⟨10.1088/1742-6596/647/1/012035⟩ |
Vertical diodes response to optical and electrical THz excitationsIEEE International Workshop on Computational Electronics, 2014, Paris, France |
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Gunn Effect in n-InP MOSFET at positive gate bias and impact ionization conditionsIEEE International Workshop On Computational Electronics, 2014, Paris, France |
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Simulation of plasma oscillation response to THz radiation applied upon high electron mobility transistorsIEEE International Workshop on Computational Electronics, 2014, Paris, France |
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Room-Temperature Optical-Beating Spectroscopy of 2D Plasma-Waves in Dual Grating-Gate HEMTs18th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON), 2013, Matsue, Japan |
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Monte Carlo simulation of low-frequency excess noise in InP MOSFETs/HEMTs at impact ionization conditions22nd ICNF International Conference on Noise and Fluctuations, 2013, Montpellier, France. ⟨10.1109/ICNF.2013.6578932⟩ |
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Modeling of the emission/noise temperature in MOSFET/HEMT structures22nd ICNF International Conference on Noise and Fluctuations, 2013, Montpellier, France. ⟨10.1109/ICNF.2013.6578887⟩ |
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Terahertz detection and electronic noise in field-effect transistors22nd ICNF International Conference on Noise and Fluctuations, 2013, Montpellier, France. ⟨10.1109/ICNF.2013.6578929⟩ |
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Improvement of FET-based terahertz detectors by phase-controlled current response18th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON), 2013, Matsue, Japan |
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Voltage Control of Terahertz Transmission Through GaN Quantum Wells: Experiments and Theory17th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures, Umesh Mishra and Stephen M. Goodnick, 2011, Santa Barbara, United States |
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THz emission induced by sub-threshold instability optical excited in nanometer-length field-effect transistors20th European Workshop on Heterostructure Technology, HeTech 2011, 2011, Villeneuve d'Ascq, France. pp.1-2 |
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Terahertz Emissions from Optically Excited Plasma Oscillations in HEMTs17th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures, Umesh Mishra; Stephen M. Goodnick, Jul 2011, Santa Barbara, United States |
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Long-Term Memory Effects in Photo-Excited InGaAs High-Electron-Mobility- Transistors17th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures, U. Misra and S. Goodnick, 2011, Santa Barbara, United States |
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THz emission enhancement in FET/HEMT due to excess electrons in channel-under-gate regions17th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures, Umesh Mishra and Stephen M. Goodnick, 2011, Santa Barbara, United States |
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Hybrid 2D-3D plasmonic noise in a gated semiconductor slab2011 21st International Conference on Noise and Fluctuations (ICNF), M.J. Deen and C.H. Chen, Jun 2011, Toronto, Canada. pp.150-153, ⟨10.1109/ICNF.2011.5994286⟩ |
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Small-signal characterization of FETs/HEMTs for terahertz applications14th International Symposium on Ultrafast Phenomena in Semiconductors, 2010, Vilnius, Lithuania |
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Enhanced terahertz transmission of GaN quantum wells35th International Conference on Infrared, Millimeter and THz Waves, 2010, Rome, Italy |
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THz plasma wave oscillations in nanotransistors: application to THz radiations detection and generation14th International Symposium on Ultrafast Phenomena in Semiconductors, 2010, Vilnius, Lithuania |
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Terahertz three-dimensional plasma resonances in InGaAs diodes: a hydrodynamic studyThe 5th European Microwave Integrated Circuits Conference, 2010, Paris, France |
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Monte Carlo study of ballistic effects in high speed InAs-based quantum hot electron transistor2010 35th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2010), Sep 2010, Rome, Italy. pp.1-2, ⟨10.1109/ICIMW.2010.5612857⟩ |
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Frequency stabilization of photo-mixing generated signal using a single Michelson interferometer35th International Conference on Infrared, Millimeter and THz Waves, 2010, Rome, Italy |
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Hydrodynamic simulation of heterodyne terahertz detection in a field effect transistor35th International Conference on Infrared, Millimeter and THz Waves, 2010, Rome, Italy |
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Suppression of high-frequency electronic noise induced by 2D plasma waves in field-effect and high-electron-mobility transistors2011 21st International Conference on Noise and Fluctuations (ICNF), M.J. Deen and C.H. Chen, Jun 2011, Toronto, Canada. pp.180-183, ⟨10.1109/ICNF.2011.5994294⟩ |
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Experimental investigation of THz transmission in GaN two-dimensional electron gas14th International Symposium on Ultrafast Phenomena in Semiconductors, 2010, Vilnius, Lithuania |
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Hydrodynamic study of electronic, optical and thermal excitation of plasma waves in HEMTs35th International Conference on Infrared, Millimeter and THz Waves, 2010, Rome, Italy |
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Measurements of THz emission from nanometric-size transistors35th International Conference on Infrared, Millimeter and Terahertz Waves, Sep 2010, Rome, Italy. pp.1 |
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Plasma-resonant THz detection with HEMTs2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM), May 2010, Takamatsu, Japan. pp.1-4, ⟨10.1109/ICIPRM.2010.5516389⟩ |
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Monte Carlo analysis of noise spectra in InAs channels from diffusive to ballistic regimeNOISE AND FLUCTUATIONS: 20th International Conference on Noice and Fluctuations (ICNF-2009), M. Macucci and G. Basso, 2009, Pisa, Italy. pp.345-348, ⟨10.1063/1.3140470⟩ |
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Coupled experimental and numerical investigations of resonant plasma waves oscillations in HEMTsGDR-E Terahertz, 2009, Montpellier, France |
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Regrowth of GaN quantum wells on GaN substrates for TeraHertz generation by amplification of transverse electromagnetic waves18th European Heterostructure Technology Workshop – HETECH, 2009, Günzburg / Ulm, Germany |
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Plasmonic noise in Si and InGaAs semiconductor nanolayers16th International Conference on Electron Dynamics In Semiconductors, Optoelectronics and Nanostructures (EDISON), L. Varani, 2009, Montpellier, France. pp.012091, ⟨10.1088/1742-6596/193/1/012091⟩ |
Electronic noise in high electron-mobility transistors under photo-excitation conditionsNOISE AND FLUCTUATIONS: 20th International Conference on Noice and Fluctuations (ICNF-2009), M. Macucci and G. Basso, 2009, Pisa, Italy. pp.321-324, ⟨10.1063/1.3140463⟩ |
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Spectroscopie terahertz des ondes de plasma excitées par battement optique dans les transistors HEMTsJournées Térahertz, 2009, Lille, France |
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Spectroscopie continue d'éléments optiques pour une expérience cryogénique terahertz5\textsuperscripte Journées Térahertz, 2009, Lille, France |
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Electronic, optical and thermal excitation of plasma waves in HEMTs: A theoretical study16th International Conference on Electron Dynamics In Semiconductors, Optoelectronics and Nanostructures (EDISON), L. Varani, 2009, Montpellier, France. pp.012076, ⟨10.1088/1742-6596/193/1/012076⟩ |
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Hydrodynamic study of terahertz three-dimensional plasma resonances in InGaAs diodes16th International Conference on Electron Dynamics In Semiconductors, Optoelectronics and Nanostructures (EDISON), 2009, Montpellier, France. pp.012096, ⟨10.1088/1742-6596/193/1/012096⟩ |
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Monte Carlo simulation of ballistic transport in high-mobility channels16th International Conference on Electron Dynamics In Semiconductors, Optoelectronics and Nanostructures (EDISON), 2009, Montpellier, France. pp.012035, ⟨10.1088/1742-6596/193/1/012035⟩ |
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Hydrodynamic modelling of electron transport in submicron Hg 0.8 Cd 0.2 Te diodes16th International Conference on Electron Dynamics In Semiconductors, Optoelectronics and Nanostructures (EDISON), L. Varani, 2009, Montpellier, France. pp.012003, ⟨10.1088/1742-6596/193/1/012003⟩ |
Analytical and numerical modelling of optical excitation of THz plasma modes in nanoHEMTsEuropean Workshop on Heterostructure Technology, 2008, Venice, Italy. pp.157--158 |
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Terahertz generation in GaN quantum wells by amplification of transverse electromagnetic wavesEuropean Workshop on Heterostructure Technology, 2008, Venice, Italy. pp.85--86 |
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Instabilités et résonances TeraHertz dans les nanodispositifs : modélisation hydrodynamiqueJournées Nationales Du Réseau Doctoral de Micro-électronique (JNRDM), 2008, Bordeaux, France |
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Experimental and theoretical investigation of optically excited THz plasma waves in submicron InGaAs HEMTsEOS Annual Meeting - Topical Meeting on Terahertz Science and Technology, 2008, Paris, France |
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Conversion optoélectronique terahertz par nanotransistors HEMTs à ondes de plasma : simulations hydrodynamiques et expériencesProc. Journées Nationales Du Réseau Doctoral de Micro-électronique (JNRDM), 2008, Bordeaux, France |
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Utilisation des phonons optiques dans la génération d'ondes terahertz dans le GaNJournées Nationales Du Réseau Doctoral de Micro-électronique (JNRDM), 2008, Bordeaux, France |
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Study of electronic transport in high mobility materials: application to InGaAs and InAs17th European Workshop on Heterostructure Technology (HETECH), Giovanni Verzellesi, Gaudenzio Meneghesso, Matteo Meneghini, Daniele Vogrig, 2008, Venice, Italy |
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Etude microscopique des propriétés de transport électronique dans l’InGaAs à température ambianteJournées Nationales Du Réseau Doctoral de Micro-électronique (JNRDM), 2008, Bordeaux, France |
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THz detection and generation by semiconductor heterostructures using transport properties in InGaAs HEMT and GaN 2D electron gasEuropean Workshop on Heterostructure Technology, 2008, Venice, Italy. pp.155--156 |
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Étude Théorique et Expérimentale de la Réponse à un Battement Optique de Transistors HEMT à Onde de PlasmaJournées Térahertz, 2007, Bombannes, France |
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Conversion opto-électronique 100−500 GHz dans des nanotransistors HEMTsJournées Nationales Microondes, 2007, Toulouse, France |
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Noise analysis of plasma wave oscillations in InGaAs channelsNOISE AND FLUCTUATIONS: 19th International Conference on Noise and Fluctuations; ICNF 2007, M. Tacano, Y Yamamoto, and M. Nakao, 2007, Tokyo, Japan. pp.201-206, ⟨10.1063/1.2759666⟩ |
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Generation of coherent TeraHertz radiation assisted by optical phonons in nitride-based bidimensionnal heterostructures19th International Conference on Hertzian Optic and Dielectrics, 2007, Valence, France |
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Modélisation hydrodynamique de la synchronisation optique des oscillations de plasma térahertz dans les nanotransistorsJournées Nationales Du Réseau Doctoral de Micro-électronique (JNRDM), 2007, Lille, France |
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Experimental and Theoretical Investigation of sub-TeraHertz Optical-Beating Detection by Plasma Waves in High Electron Mobility TransistorsInternational Conference on Nonequilibrium Carrier Dynamics in Semiconductors, 2007, Tokyo, Japan |
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Generation of Coherent TeraHertz Radiation in 2D Nitride-Based StructuresIRMMW-THz, 2007, Cardiff, United Kingdom |
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Etude microscopique des oscillations THz dans des systèmes en InGaAsJournées Nationales Du Réseau Doctoral de Micro-électronique (JNRDM), 2007, Lille, France |
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Generation of coherent terahertz radiation due to optical-phonon emission assisted transit-time resonance in quantum wells and heterolayersSPIE Proceedings, 2006, Vilnius, Lithuania. pp.65960A-65960A-6, ⟨10.1117/12.726365⟩ |
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Modified hydrodynamic approach for the modeling of high-frequency noise in FETsNOISE AND FLUCTUATIONS: 19th International Conference on Noise and Fluctuations; ICNF 2007, M. Tacano, Y Yamamoto, and M. Nakao, 2007, Tokyo, Japan. pp.371-374, ⟨10.1063/1.2759702⟩ |
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Generation of coherent TeraHertz radiation assisted by optical phonons in nitride-based bidimensional heterostructuresOptique Hertzienne et Diélectriques, 2007, Valence, Spain |
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Analyse de la mobilité dans les transistors nanométriquesJournées Nationales du Réseau Doctorale en Microélectronique, 2006, Rennes, France |
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Analysis of the stable two-mode operation of a 4-sections semiconductor laser for THz generation by photomixingInternational Symposium on Space Terahertz Technology, 2006, Paris, France. pp.255--258 |
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Two mode operation of 4-section semiconductor laser for terahertz generation by photomixingSPIE Photonics Europe, Apr 2006, Strasbourg, France. pp.61940L, ⟨10.1117/12.662915⟩ |
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Étude et caractérisation d'une source laser bimode pour la génération THz par photomélange à 1,55 μmJNMO, 2006, Aussois, France. pp.175--176 |
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Monte Carlo Study of the Suppression of Diffusion Noise14th Int. Conf. on Nonequilibrium Carrier Dynamics in Semiconductors, M. Saraniti and U. Ravaioli, 2005, Chicago, United States. pp.287-290, ⟨10.1007/978-3-540-36588-4_65⟩ |
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TeraHertz Emission From Nanometric HEMTs Analyzed by Noise Spectra14th Int. Conf. on Nonequilibrium Carrier Dynamics in Semiconductors, M. Saraniti and U. Ravaioli, 2005, Chicago, United States. pp.291-294, ⟨10.1007/978-3-540-36588-4_66⟩ |
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Terahertz emission from nanometric HEMTs analyzed by noise spectraTerahertz emission from nanometric HEMTs analyzed by noise spectra, 2005, Salamanca, Spain. pp.335-338, ⟨10.1063/1.2036763⟩ |
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Monte carlo analysis of nano-scale Schottky diodes for THz generation5th Int. Conf. and 7th annual general meeting of the European Society for Precision Engineering and Nanotechnology (EUSPEN), F. Chevrier, T. Taliercio, P. Falgayrettes and P. Gall-Borrut, 2005, Montpellier, France. pp.763 |
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Monte Carlo calculation of diffusion coefficient, noise spectral density and noise temperature in HgCdTeNOISE AND FLUCTUATIONS: 18th International Conference on Noise and Fluctuations - ICNF 2005, T. Gonzalez, J. Mateos, D. Pardo, 2005, Salamanca, Spain. pp.151-154, ⟨10.1063/1.2036720⟩ |
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Is It Possible To Suppress Noise By Noise In Semiconductors?UNSOLVED PROBLEMS OF NOISE AND FLUCTUATIONS: UPoN 2005: Fourth International Conference on Unsolved Problems of Noise and Fluctuations in Physics, Biology, and High Technology, L. Reggiani, C. Pennetta, V. Akimov, E. Alfinato and M. Rosini, 2005, Gallipoli, Italy. pp.474-479, ⟨10.1063/1.2138655⟩ |
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Monte Carlo calculations of high-frequency mobility and diffusion noise in nitride-based semiconductors12th International Symposium UFPS, 2004, Vilnius, Lithuania. pp.408, ⟨10.12693/APhysPolA.107.408⟩ |
Lasers à 4 sections 1.55 µm bimode pour la génération Térahertz par photomélangeHorizons de l'Optique 2005 & 24èmes Journées Nationales d'Optique Guidée (Horizons 2005 / JNOG 2005) [ http://www.univ-savoie.fr/labos/lahc/horizonsjnog/presentation_hor.html ], Nov 2005, Chambéry, France. pp.54-55 |
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Heat transport and spurious velocity overshoots in moment-based simulations of deep-submicron devices14th Workshop on modelling and simulation of electron devices, 2003, Barcelona, Spain. pp.5-8 |
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A Monte Carlo approach to current fluctuations under high-frequency large amplitude cyclostationary conditions14th Workshop on modelling and simulation of electron devices, 2003, Barcelona, Spain. pp.81-84 |
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Monte Carlo and semi-analytical approaches to non-equilibrium high-frequency transport in narrow-gap semiconductors: application to Mercury-Cadmium-Telluride14th Workshop on modelling and simulation of electron devices, 2003, Barcelona, Spain. pp.37-40 |
Terahertz Electronic DevicesSpringer Handbook of Semiconductor Devices, Springer International Publishing, pp.807-849, 2023, Springer Handbooks, ⟨10.1007/978-3-030-79827-7_22⟩ |
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Plasma Wave Excitation by Terahertz Electric Signal in High Electron Mobility TransistorsD. Persano Adorno and S. Pokutnyi. Advances in Semiconductor Research: Physics of Nanosystems, Spintronics and Technological Applications, Chapitre 11, NOVA Science Publisher, p. 227, 2014, 978-1-63321-788-1 |
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Theory of Ballistic Electron Transport in n+-i-n+ Diodes : Propertie in THz Frequency RangeW. A. Goddard, D. W. Brenner, S. E. Lyshevski, G. J. Iafrate. Handbook of Nanoscience, Engineering, and Technology, CRC Press, pp.239-275, 2012, Handbook of Nanoscience, Engineering, and Technology, 978-1-4398-6015-1 |
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The scattered packet method for the simulation of transport phenomena in semiconductorRecent Research Advances in Science and Technology of Semiconductors, Transworld Research Network, pp.95-119, 2004, 81-7895-137-1 |
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Evaluation des effets d’une onde hyperfréquence de forte puissance sur les matériaux à applications optroniques : Application au Hg1−xCdxTeElectronique. Université Montpellier 2, 2004. Français. ⟨NNT : ⟩ |
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Contribution de la modélisation et du calcul numérique au développement de sources et détecteurs térahertzElectronique. Université de Montpellier, 2016 |