Corentin Durand
Présentation
Publications
Publications
Epitaxial Topological Insulator Bi1 xSbx lms on GaAs substrates for Spintronic applicationsJournées de la Matière Condensée, Société Française de Physique, Oct 2024, Marseille, France |
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Characterization of epitaxial Bi1-xSbx topological insulator thin films on GaAs(111) substratesJournées de la Matière Condensée 2024, Société Française de Physique, Oct 2024, Marseille, France |
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Topological insulator Bi1-xSbx films on GaAs substrates as current-induced Spin-Orbit Torques generators2023 E-MRS Fall Meeting, E-MRS, Sep 2023, Warsaw (Varsovie), Poland |
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Electronic properties of selective area grown semiconductor heterostructuresJournées du GDR Nanosciences with near-field microscopy under ultra high vacuum 2021, Nov 2021, Toulouse, France |
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Au(111) characterization, single atom manipulation and Si(100):H surface imaging by LT-UHV-4P-STM.AVS 63rd International Symposium & Exhibition , Nov 2016, Nashville TN United States |
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Electrical characterization of semiconductor nanowires by scanning tunneling microscopySPIE Photonics West, OPTO, Conference 8996 - Quantum Dots and Nanostructures : Synthesis, Characterization, and Modeling XI, 2014, San Francisco, CA, United States. 89960E, 10 p., ⟨10.1117/12.2042767⟩ |
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Nanoscale transport measurements with multiple probe scanning tunneling microscopy16th International Congress of Metrology, 2013, Paris, France. S20 Nanotechnology, 13001, 4 p., ⟨10.1051/metrology/201313001⟩ |
Ionisation par impact dans les jonctions p-n de silicium16ème Forum des Microscopies à Sondes Locales, Mar 2013, Spa, Belgique |
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Electrical transport measurements of individual III-V semiconductor nanowires with reconstructed sidewallsInternational Conference on Nanoscience and Technology, ICN+T 2012, 2012, Paris, France |
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Étude des propriétés électroniques de nanofils semiconducteurs d'InAs par microscopie à effet tunnel basse température et quatre pointes14ème Forum des Microscopies à Sonde Locale, 2011, Ecully, France |
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Combined STM and four-probe resistivity measurements on single semiconductor nanowires1st AtMol International Workshop on Atomic Scale Interconnection Machine, Jun 2011, Singapore, Singapore. pp.107-118, ⟨10.1007/978-3-642-28172-3_8⟩ |
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Electrical transport measurements and topography of III-V semiconductor nanowires by four probe and low temperature scanning tunneling microscopyMaterials Research Society Fall Meeting, MRS Fall 2011, Symposium BB : Semiconductor nanowires for photovoltaics, 2011, Boston, MA, United States |
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Electrical transport measurements and topography of semiconductor nanowires by four probe and low temperature scanning tunneling microscopyHerodot Summer School, 2011, Cargese, France |
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Electrical transport measurements and topography of III-V semiconductor nanowires by four probe and low temperature scanning tunneling microscopy4th Plenary Workshop of GdR Nanofils Semiconducteurs, 2011, Porquerolles, France |
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Four-point probe measurements at the nanoscaleHerodot Summer School, 2011, Cargese, France |
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Nanopackaging of Si(100)H Wafer for Atomic-Scale InvestigationsOn-Surface Atomic Wires and Logic Gates, pp.25-51, 2017, ⟨10.1007/978-3-319-51847-3_2⟩ |
Phénomènes de transport dans les nanostructures semi-conductrices étudiés par microscopie à effet tunnel à pointes multiples2012 |
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Le rôle de l’assesseur citoyen devant la commission de discipline20.20, IERDJ - Institut des Études et de la Recherche sur le Droit et la Justice. 2024, pp.300 |