Damien Deleruyelle
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Interplay between Strain and Defects at the Interfaces of Ultra‐Thin Hf 0.5 Zr 0.5 O 2 ‐Based Ferroelectric CapacitorsAdvanced Electronic Materials, 2023, pp.2300171. ⟨10.1002/aelm.202300171⟩
Article dans une revue
hal-04186567v1
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Mechanical Switching of Ferroelectric Domains in 33‐200 nm‐Thick Sol‐Gel‐Grown PbZr 0.2 Ti 0.8 O 3 Films Assisted by NanocavitiesAdvanced Electronic Materials, 2022, pp.2200077. ⟨10.1002/aelm.202200077⟩
Article dans une revue
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Ferroelectricity Improvement in Ultra-Thin Hf0.5Zr0.5O2 Capacitors by the Insertion of a Ti Interfacial Layerphysica status solidi (RRL) - Rapid Research Letters, 2022, 2100583, pp.2100583. ⟨10.1002/pssr.202100583⟩
Article dans une revue
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Interfaces engineering to enhance ferroelectricity in ultra-thin HZO CMOS compatible FTJEMRS 2023 Fall Meeting, European Materials Research Society, Sep 2023, Warsaw (Poland), Poland
Communication dans un congrès
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Interface engineering between HfZrO2 thin films and electrodes for enhanced ferroelectricity15th International Meeting on Ferroelectricity - IMF 2023, Mar 2023, Tel Aviv, Israel
Communication dans un congrès
hal-04055083v1
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Elaboration and imprint consideration in HfZrO2 ferroelectric capacitorsHigh k Workshop 2023, NamLab, May 2023, Dresden, Germany
Communication dans un congrès
hal-04136940v1
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Influence of Interfaces on the Enhanced Ferroelectricity of Ultra-Thin HZO-Based Tunnel JunctionsISAF-ISIF-PFM 2023 SYMPOSIUM, IEEE; UFFC, Jul 2023, Cleveland, United States
Communication dans un congrès
hal-04195857v1
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Influence of the electrode interface on the properties of ferroelectric HfZrO2High k Workshop 2022, NamLab, Sep 2022, Dresden, Germany
Communication dans un congrès
hal-03775873v1
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Comparative Study of sub-8 nm HZO-Based Ferroelectric Tunnel Junctions with Enhanced FerroelectricityISAF-PFM-ECAPD 2022, Jun 2022, Tours, France
Communication dans un congrès
hal-03715029v1
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A multiscale study of the structure, chemistry and ferroelectric properties of epitaxial sol-gel PbZr0.2Ti0.8O3 films for nanomechanical switchingISAF-PFM-ECAPD 2022, IEEE UFFC, Jun 2022, Tours, France
Communication dans un congrès
hal-03719104v1
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Fabrication process for sub-8 nm HfZrO2-based ferroelectric tunnel junctions with enhanced propertiesEMRS 2022 Spring Meeting - Symposium E : Adaptive materials and devices for brain-inspired electronics, European Materials Research Society, May 2022, Strasbourg, France
Communication dans un congrès
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