Damien Deleruyelle
Publications
Publications
PEALD of Antiferroelectric Fluorite for High Energy Storage ApplicationsRAFALD 2025, GDR RAFALD, Nov 2025, Grenoble, France |
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Enhancing Polarization and Reliability in HZO-Based FTJs Using WOx Electrodes and Interfacial LayersSouth Asia Ferroelectric Symposium (SAFS), IEEE UFFC, Aug 2025, Bengaluru (Bangalore), India |
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Antiferroelectric fluorite-based capacitors for ultra-high energy storage density applicationsInternational Symposium on Applications of Ferroelectrics (ISAF), IEEE UFFC, Jul 2025, Graz, Austria |
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Machine learning for advanced ferroelectric materials: theory and experimentEuropean Meeting on Ferroelectricity, Aug 2025, Katowice, Poland |
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Nanostructuration and Interfacial Effects on the Properties of Ferroelectric HfZrO2 Thin FilmsThe 14th Joint Asian Meeting on Ferroelectrics and Electroceramics (AMF-AMEC-14) - ICMAT 2025, MRS-Singapore, Jun 2025, Singapour, Singapore |
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Antiferroelectric PUND measurements on ZrO2High k Workshop 2025, NamLab, Mar 2025, Dresden, Germany |
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Antiferroelectric fluorite-based capacitors for ultra-high energy storage density applicationsC'NANO 2025, Centre national de Compétences en Nanosciences du CNRS, Mar 2025, Paris, France |
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Novel Electrical Characterization Method for Antiferroelectric like ZrO2 using a Positive Up Negative Down ApproachInternational Symposium on Applications of Ferroelectrics (ISAF), IEEE UFFC, Jul 2025, Graz, Austria |
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State-of-the-Art Research on Hf-ZrO2 Ferroelectric and Antiferroelectric CapacitorsSouth Asia Ferroelectric Symposium (SAFS), IEEE UFFC, Aug 2025, Bengaluru (Bangalore), India |
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Development of ferroelectric and antiferroelectric H1-xZrxO2-based capacitors for non-volatile memories and power supply applicationsJNTE (Journées Nationales sur les Technologies Emergentes en micro-nanofabrication) 2024, Telecom Saint-Etienne; Laboratoire Hubert Currien, Nov 2024, Saint-Etienne (FR), France |
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Hf(1-x)Z(x)O2 monolayers for nanosupercapacitors: a performance assessment studyXXXIX RSEF Physics Biennial, Real Sociedad Española de Física, Jul 2024, San Sebastian, Spain |
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Serendipity in materials science: how a simple doping leads to novel and outstanding properties in simple dielectric HfO2 !ELyT Workshop 2024, Mar 2024, Sendai, Japan |
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3D VNWFET-Based Standard Cell Library Design Flow: from Circuit and Physical Design to Logic Synthesis2024 IFIP/IEEE 32nd International Conference on Very Large Scale Integration (VLSI-SoC), Oct 2024, Tanger, France. pp.1-4, ⟨10.1109/VLSI-SoC62099.2024.10767812⟩ |
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FVLLMONTI: The 3D Neural Network Compute Cube $(N^{2}C^{2})$ Concept for Efficient Transformer Architectures Towards Speech-to-Speech Translation2024 Design, Automation & Test in Europe Conference & Exhibition (DATE), Mar 2024, Valencia, Spain. pp.1-6, ⟨10.23919/DATE58400.2024.10546700⟩ |
PE-ALD antiferroelectric fluorite for high energy storage nanosupercapacitors10ème Workshop du Réseau des Acteurs Français de l'ALD, GDR RAFALD, Nov 2024, Nantes (France), France |
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VNWFET-Based Systolic Array Accelerator for Deep Neural Networks2024 IEEE 24th International Conference on Nanotechnology (NANO), Jul 2024, Gijon, Spain. pp.620-625, ⟨10.1109/NANO61778.2024.10628674⟩ |
Stabilization of low dimensional ferroelectric HfZrO2 filmInternational Workshop on Emergent Phenomena in Low-Dimensional Ferroelectric Structures, Helmholtz-Zentrum Berlin, Jun 2024, Berlin, Germany |
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High energy storage antiferroelectric fluorite nanosupercapacitorsCMD31, European Physical Society; CMD-General Conference of the Condensed Matter Division, Sep 2024, Braga, Portugal |
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Elaboration and imprint consideration in HfZrO2 ferroelectric capacitorsHigh k Workshop 2023, NamLab, May 2023, Dresden, Germany |
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Study of Imprint Dynamics in HZO Ferroelectric CapacitorsInternational Symposium on Applications of Ferroelectrics 2023, IEEE; UFFC, Jul 2023, Cleveland, United States |
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VNWFET-Based Technology: From Device Modelling to Standard Cell Library2023 IEEE 23rd International Conference on Nanotechnology (NANO), Jul 2023, Jeju City, France. pp.576-581, ⟨10.1109/NANO58406.2023.10231288⟩ |
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1S1R sub-threshold operation in Crossbar Arrays for Neural Networks hardware implementationMIXDES 2023, Jun 2023, CRACOVIE, Poland. ⟨10.23919/MIXDES58562.2023.10203226⟩ |
Interface engineering between HfZrO2 thin films and electrodes for enhanced ferroelectricity15th International Meeting on Ferroelectricity - IMF 2023, Mar 2023, Tel Aviv, Israel |
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How ALD deposition analysis can help PVD deposition process!9ème Workshop RAFALD, GDR RAFALD, Nov 2023, Lille (France), France |
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Interfaces engineering to enhance ferroelectricity in ultra-thin HZO CMOS compatible FTJEMRS 2023 Fall Meeting, European Materials Research Society, Sep 2023, Warsaw (Poland), Poland |
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Engineering the nano and micro structures of sputtered HfZrO2 thin films15th International Meeting on Ferroelectricity - IMF 2023, Mar 2023, Tel Aviv, Israel |
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Study of Imprint dynamics in CMOS compatible HZO ferroelectric capacitorsEMRS 2023 Fall Meeting, European Materials Research Society (E-MRS), Sep 2023, Warsaw, Poland |
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Energy-efficient Computation-In-Memory Architecture using Emerging Technologies2023 International Conference on Microelectronics (ICM 2023), Dec 2023, Abu Dhabi, United Arab Emirates. pp.325-334, ⟨10.1109/ICM60448.2023.10378889⟩ |
Influence of Interfaces on the Enhanced Ferroelectricity of Ultra-Thin HZO-Based Tunnel JunctionsISAF-ISIF-PFM 2023 SYMPOSIUM, IEEE; UFFC, Jul 2023, Cleveland, United States |
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1S1R sub-threshold operation in Crossbar arrays for low power BNN inference computingIMW 2022 - IEEE International Memory Workshop, May 2022, Dresden, Germany. pp.1-4, ⟨10.1109/IMW52921.2022.9779253⟩ |
Influence of the electrode interface on the properties of ferroelectric HfZrO2High k Workshop 2022, NamLab, Sep 2022, Dresden, Germany |
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A multiscale study of the structure, chemistry and ferroelectric properties of epitaxial sol-gel PbZr0.2Ti0.8O3 films for nanomechanical switchingISAF-PFM-ECAPD 2022, IEEE UFFC, Jun 2022, Tours, France |
Comparative Study of sub-8 nm HZO-Based Ferroelectric Tunnel Junctions with Enhanced FerroelectricityISAF-PFM-ECAPD 2022, Jun 2022, Tours, France |
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High temperature stability embedded ReRAM for 2x nm node and beyond2022 IEEE International Memory Workshop (IMW), May 2022, Dresden, France. pp.1-4, ⟨10.1109/IMW52921.2022.9779293⟩ |
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Study of Polarisation and Conduction Mechanisms in Ferroelectric Hf0.5Zr0.5O2 Down to Deep Cryogenic Temperature 4.2 KISAF-PFM-ECAPD 2022, IEEE UFFC, Jun 2022, Tours, France |
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Wake-Up Effect and Retention Evolutions of Hf0.5Zr0.5O2 Capacitor by Nanostructuration EngineeringISAF-PFM-ECAPD 2022, IEEE UFFC, Jun 2022, Tours, France |
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How to play on the fabrication process of HfZrO2 ferroelectric thin film to enhance its physical propertiesEMRS 2022 Spring Meeting - Symposium N: Synthesis, processing and characterization of nanoscale multi functional oxide films VIII and 6th E-MRS & MRS-J bilateral symposium, European Materials Research Society, May 2022, Strasbourg, France |
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Fabrication process for sub-8 nm HfZrO2-based ferroelectric tunnel junctions with enhanced propertiesEMRS 2022 Spring Meeting - Symposium E : Adaptive materials and devices for brain-inspired electronics, European Materials Research Society, May 2022, Strasbourg, France |
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Why neuromorphic computing need novel 3D technologies? A view from FVLLMONTI European project consortium (Invited)High Performance Embedded Architecture and Compilation, Computing Systems Week, (HiPEAC CSW) Autumn 2021, Oct 2021, Lyon, France |
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Elucidating 1S1R operation to reduce the read voltage margin variability by stack and programming conditions optimization2021 IEEE International Reliability Physics Symposium (IRPS), Mar 2021, Monterey, United States. ⟨10.1109/IRPS46558.2021.9405195⟩ |
Role of ultra-thin Ti and Al interfacial layers in HfZrO2 ferroelectric tunnel junctionsEMRS 2021 Fall Meeting, European Materials Research Society, Sep 2021, Warsaw, Poland |
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Electrical Characterisation of HfZrO2 Ferroelectric Tunnel Junctions for Neuromorphic ApplicationEMRS 2021 Fall Meeting, Sep 2021, Online, Canada |
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Impact of a dielectric layer at TiN/HfZrO2 interface for ferroelectric tunnel junctions applicationsJournées de la matière condensée (JMC17), Société française de physique (SFP), Aug 2021, Rennes, France |
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Ge-Se-Sb-N-based OTS scaling perspectives for high-density 1S1R crossbar arrays2021 IEEE INTERNATIONAL MEMORY WORKSHOP (IMW), May 2021, Dresde, Germany. pp.107-110, ⟨10.1109/IMW51353.2021.9439606⟩ |
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Effect of bottom electrodes on HZO thin film propertiesInternational Symposium on Applications of Ferroelectrics (ISAF) 2021, https://isaf-isif-pfm2021.org/, May 2021, Sydney, Australia |
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Modelling of vertical and ferroelectric junctionless technology for efficient 3D neural network compute cube dedicated to embedded artificial intelligence (Invited)67th Annual IEEE International Electron Devices Meeting (IEDM 2021), Dec 2021, San Fransisco, United States. ⟨10.1109/IEDM19574.2021.9720572⟩ |
Optimization of RRAM and OTS selector for advanced low voltage CMOS compatibility2020 IEEE International Memory Workshop (IMW), May 2020, Dresden, Germany. pp.1-4, ⟨10.1109/IMW48823.2020.9108126⟩ |
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Crosspoint Memory Arrays: Principle, Strengths and Challenges2020 IEEE International Memory Workshop (IMW), May 2020, Dresden, Germany. pp.1-4, ⟨10.1109/IMW48823.2020.9108143⟩ |
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Reliability and Variability of 1S1R OxRAM-OTS for High Density Crossbar Integration2019 IEEE International Electron Devices Meeting (IEDM), Dec 2019, San Francisco, United States. pp.35.3.1-35.3.4, ⟨10.1109/IEDM19573.2019.8993439⟩ |
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CBRAM devices with a water casted solid polymer electrolyte for flexible electronic applications2019 IEEE 14th Nanotechnology Materials and Devices Conference (NMDC), Oct 2019, Stockholm, France. pp.1-5, ⟨10.1109/NMDC47361.2019.9083996⟩ |
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Optimization of resistive memories using In2O3 nanostructures integration with a CMOS Back-End-Off-Line processAnnual Conference on Nanotechnology and Advanced Materials, Nov 2019, San Francisco, United States |
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Conductive Bridge Random Access Memory devices with Ecofriendly Solid Polymer Electrolyte for flexible electronics applications11th International Symposium on Organic Flexible Electronics (ISFOE), Jul 2018, Thessaloniki, Greece |
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Indium Oxide Nanostructure Optimization for RRAM Integration on CMOS BEOL2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO), Jul 2018, Cork, Ireland. pp.1-2, ⟨10.1109/NANO.2018.8626323⟩ |
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Low Cost Diode as Selector Device for Embedded Phase Change Memory in Advanced FD-SOI TechnologyIEEE International Memory Workshop (IMW 2018), May 2018, Kyoto, Japan. ⟨10.1109/IMW.2018.8388839⟩ |
Conductive Bridge Random Access Memory Devices Based on an Ecofriendly Solid Polymer Electrolyte8th Advanced Functional Materials and Devices, Aug 2018, Leuven, Belgium |
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Impact of a Laser Pulse On HfO$_2$-based RRAM Cells Reliability and Integrity2016 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES (ICMTS), 2016, Unknown, Unknown Region. pp.152-156 |
Impact of a laser pulse on HfO2-based RRAM cells reliability and integrity2016 International Conference on Microelectronic Test Structures (ICMTS), Mar 2016, Yokohama, France. pp.152-156, ⟨10.1109/ICMTS.2016.7476196⟩ |
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Investigation of the potentialities of Vertical Resistive RAM (VRRAM) for neuromorphic applications2015 IEEE International Electron Devices Meeting (IEDM), Dec 2015, Washington, United States. pp.17.2.1-17.2.4, ⟨10.1109/IEDM.2015.7409717⟩ |
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(Invited) Temperature Impact on Reliablity and Manufacturing of Embedded HfOx-Based RRAM: a Novel Pre-coding Method for Bypassing Soldering ReflowECS Meetings, May 2014, Orlando (Florida), United States. pp.311-313, ⟨10.1149/06102.0311ecst⟩ |
Fabrication and characterization of ECM memories based on a Ge2Sb2Te5 solid electrolyte2014 10th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), Jun 2014, Grenoble, France. ⟨10.1109/PRIME.2014.6872754⟩ |
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Analytical study of complementary memristive synchronous logic gates2013 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), Jul 2013, Brooklyn, United States. ⟨10.1109/NanoArch.2013.6623047⟩ |
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Analytical study of complementary memristive synchronous logic gates2013 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), Jul 2013, Brooklyn, France. ⟨10.1109/NanoArch.2013.6623047⟩ |
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Synchronous Full-Adder based on Complementary Resistive Switching Memory Cells11th International New Circuits and Systems Conference (NEWCAS), Jun 2013, Paris, France. ⟨10.1109/NEWCAS.2013.6573578⟩ |
Compact modeling solutions for OxRAM memories2013 IEEE Faible Tension Faible Consommation (FTFC), Jun 2013, Paris, France. pp.1-4, ⟨10.1109/FTFC.2013.6577779⟩ |
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Crossbar architecture based on 2R complementary resistive switching memory cell2012 IEEE/ACM International Symposium on Nanoscale Architectures , Jul 2012, Amsterdam, Netherlands. ⟨10.1145/2765491.2765508⟩ |
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On the electrical variability of resistive-switching memory devices based on NiO oxide2011 IEEE 42nd Semiconductor Interface Specialists Conference (SISC), Dec 2011, Arlington, United States |
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Design challenges for prototypical and emerging memory concepts relying on resistance switching2011 IEEE Custom Integrated Circuits Conference (CICC 2011), Sep 2011, San Jose, CA, United States. ⟨10.1109/CICC.2011.6055316⟩ |
Interface Study of SiO 2 / HfO 2 /SiO 2 Stacks Used as InterPoly Dielectric for Future Generations of Embedded Flash MemoriesMRS Online Proceedings Library, Apr 2010, San Francisco, United States. pp.1252-I07-08, ⟨10.1557/proc-1252-i07-08⟩ |
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Experimental and theoretical study of electrode effects in HfO2 based RRAM2011 IEEE International Electron Devices Meeting (IEDM), Dec 2011, Washington, France. pp.28.7.1-28.7.4, ⟨10.1109/IEDM.2011.6131634⟩ |
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Reliability of NiO-Based Resistive Switching Memory (ReRAM) Elements with Pillar W Bottom Electrode2009 IEEE International Memory Workshop (IMW), May 2009, Monterey, France. pp.1-3, ⟨10.1109/IMW.2009.5090606⟩ |
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From micrometric to nanometric scale switching of CuTCNQ-based non-volatile memory structures2008 9th Annual Non-Volatile Memory Technology Symposium, Nov 2008, Pacific Grove, France. pp.1-4, ⟨10.1109/NVMT.2008.4731190⟩ |
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Investigation of a new three bits cell concept2008 9th Annual Non-Volatile Memory Technology Symposium (NVMTS), Nov 2008, Pacific Grove, France. pp.1-5, ⟨10.1109/NVMT.2008.4731202⟩ |
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Integration of resistive switching NiO in small via structures from localized oxidation of nickel metallic layerESSDERC 2008 - 38th European Solid-State Device Research Conference, Sep 2008, Edinburgh, United Kingdom. pp.218-221 |
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Impact of few electron phenomena on floating-gate memory reliabilityIEDM Technical Digest. IEEE International Electron Devices Meeting, 2004., Mar 2004, San Francisco, France. pp.877-880, ⟨10.1109/IEDM.2004.1419320⟩ |
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A new memory concept: the Nano-Multiple-Tunnel-Junction memory with embedded Si nano-crystalsSilicon Nanoelectronics Workshop, 2002, Honolulu, United States. pp.Volume 72, Issues 1-4, Pages 399-404 |
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Effect of high-k materials in the control dielectric stack of nanocrystal memoriesProceedings of the 34th European Solid-State Device Research Conference, Sep 2004, Leuven, France. pp.161-164, ⟨10.1109/ESSDER.2004.1356514⟩ |
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Electrical characterization of memory cell structures using multiple tunnels junctions with embedded Si nanocrystalsSilicon Nano-electronics Workshop 2002, 2002, Honolulu, United States |
Antiferroelectric Fluorite for High Energy Storage ApplicationsHigh k Workshop 2025, Mar 2025, Dresden, Germany. |
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Antiferroelectric Fluorite for High Energy Storage ApplicationsFrance-Japan Forum 2025 (JSPS–JST) Energy Transition and Materials, Nov 2025, Villeurbanne, France. |
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Investigation of resistance fluctuations in ReRAM: physical origin, temporal dependence and impact on memory reliabilityIRPS 2023 (IEEE International Reliability Physics Symposium), Mar 2023, Monterey, Californie, United States. 2023, ⟨10.1109/IRPS48203.2023.10117882⟩ |
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Influence of bottom electrodes on HZO thin film featuresMaterial Challenge for Memory Applications 2021, Apr 2021, New York, United States |
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Bottom electrodes impact on Hf0.5Zr0.5O2 ferroelectric tunnel junctionsEMRS Spring Meeting 2021, May 2021, Virtual, France. |
Emerging Memory ConceptsDesign Technology for Heterogeneous Embedded Systems, Springer Netherlands, pp.339-364, 2012, ⟨10.1007/978-94-007-1125-9_16⟩ |
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A single Nano-Dot Embedded in a Plate CapacitorSattler, Klaus D. Handbook of Nanophysics - Nanoelectronics and Nanophotonics, CRC Press, 2010, 978-1-4200-7550-2 |
Granularity Exploration for Logic in Memory2020 |
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Novel Electrical Characterization Method for Antiferroelectrics using a Positive Up Negative Down Approach2025 |