Damien Deleruyelle

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Publications

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Reinforcement Learning-Assisted Ferroelectric Domain Wall Design Using a Machine Learning Phase-Field Surrogate

Damien Deleruyelle , Brice Gautier , Kévin Alhada-Lahbabi
ACS Applied Electronic Materials, 2025, 7 (3), pp.1130-1141. ⟨10.1021/acsaelm.4c01984⟩
Article dans une revue hal-05006236 v1
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An Original Positive-Up-Negative-Down Protocol for Electrical Characterization of Antiferroelectric Materials

Grégoire Magagnin , Martine Le Berre , Sara Gonzalez , Brice Gautier , Damien Deleruyelle et al.
Nano Letters, In press, ⟨10.1021/acs.nanolett.5c00851⟩
Article dans une revue hal-05042560 v1
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Oxygen vacancy effects on polarization switching of ferroelectric Bi$_2$FeCrO$_6$ thin films

Xavier Henning , Kevin Alhada-Lahbabi , Damien Deleruyelle , Brice Gautier , Laurent Schlur et al.
Physical Review Materials, 2024, 8 (5), pp.054416. ⟨10.1103/PhysRevMaterials.8.054416⟩
Article dans une revue hal-04606219 v1
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A numerical analysis of the short open load calibration robustness for capacitance measurements in scanning microwave microscopy

Damien Richert , Damien Deleruyelle , José Morán-Meza , Khaled Kaja , Almazbek Imanaliev et al.
Measurement Science and Technology, 2024, 36 (1), pp.015013. ⟨10.1088/1361-6501/ad7e3b⟩
Article dans une revue hal-04814141 v1

On the Potential of Ambipolar Schottky-Based Ferroelectric Transistor Designs for Enhanced Memory Windows in Scaled Devices

Mischa Thesberg , Tetiana Obukhova , Damien Deleruyelle , Jens Trommer , Thomas Mikolajick et al.
IEEE Transactions on Electron Devices, 2024, 71 (11), pp.6686-6690. ⟨10.1109/TED.2024.3459878⟩
Article dans une revue hal-05006261 v1
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Ultrafast and accurate prediction of polycrystalline hafnium oxide phase-field ferroelectric hysteresis using graph neural networks

Alhada-Lahbabi Kévin , Deleruyelle Damien , Gautier Brice
Nanoscale Advances, 2024, 6 (9), pp.2350-2362. ⟨10.1039/d3na01115a⟩
Article dans une revue hal-04814154 v1

Machine learning surrogate for 3D phase-field modeling of ferroelectric tip-induced electrical switching

Kévin Alhada-Lahbabi , Damien Deleruyelle , Brice Gautier
npj Computational Materials, 2024, 10 (1), pp.197. ⟨10.1038/s41524-024-01375-7⟩
Article dans une revue hal-04814146 v1
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Comparative performance of fluorite-structured materials for nanosupercapacitor applications

Grégoire Magagnin , Jordan Bouaziz , Martine Le Berre , Sara Gonzalez , Damien Deleruyelle et al.
APL Materials, 2024, 12 (7), pp.071124. ⟨10.1063/5.0220110⟩
Article dans une revue hal-04662425 v1
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Transfer learning for accelerating phase-field modeling of ferroelectric domain formation in large-scale 3D systems

Kévin Alhada-Lahbabi , Damien Deleruyelle , Brice Gautier
Computer Methods in Applied Mechanics and Engineering, 2024, 429, pp.117167. ⟨10.1016/j.cma.2024.117167⟩
Article dans une revue hal-04814150 v1
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Phase‐Field Study of Nanocavity‐Assisted Mechanical Switching in PbTiO 3 Thin Films

Kévin Alhada-Lahbabi , Damien Deleruyelle , Brice Gautier
Advanced Electronic Materials, 2024, 10 (5), ⟨10.1002/aelm.202300744⟩
Article dans une revue hal-04814170 v1

A Fully-Numerical Environment for Evaluating the Robustness of the Short Open Load Calibration for Capacitance Measurements in Scanning Microwave Microscopy

D. Richert , K. Kaja , J. Morán-Meza , B. Gautier , D. Deleruyelle et al.
Proceedings of the IEEE-MTT IEEE, 2023, pp.133-135. ⟨10.1109/NEMO56117.2023.10202380⟩
Article dans une revue hal-04579192 v1
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3D Logic circuit design oriented electrothermal modeling of vertical junctionless nanowire FETs

Sara Mannaa , Arnaud Poittevin , Cédric Marchand , Damien Deleruyelle , Bastien Deveautour et al.
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2023, 9 (2), pp.116 - 123. ⟨10.1109/JXCDC.2023.3309502⟩
Article dans une revue hal-04230911 v1
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Interplay between Strain and Defects at the Interfaces of Ultra‐Thin Hf 0.5 Zr 0.5 O 2 ‐Based Ferroelectric Capacitors

Greta Segantini , Benoît Manchon , Infante Ingrid C. , Matthieu Bugnet , Rabei Barhoumi et al.
Advanced Electronic Materials, 2023, pp.2300171. ⟨10.1002/aelm.202300171⟩
Article dans une revue hal-04186567 v1

Machine Learning Surrogate Model for Acceleration of Ferroelectric Phase-Field Modeling

Kévin Alhada-Lahbabi , Damien Deleruyelle , Brice Gautier
ACS Applied Electronic Materials, 2023, 5 (7), pp.3894-3907. ⟨10.1021/acsaelm.3c00601⟩
Article dans une revue hal-04814174 v1
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1S1R optimization for high‐frequency inference on binarized spiking neural networks

Joel Minguet Lopez , Quentin Rafhay , Manon Dampfhoffer , Lucas Reganaz , Niccolo Castellani et al.
Advanced Electronic Materials, 2022, 2022 (8), pp.2200323. ⟨10.1002/aelm.202200323⟩
Article dans une revue cea-03707409 v1
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Insertion of an Ultra‐thin Interfacial Aluminium Layer for the Realisation of a Hf0.5Zr0.5O2 Ferroelectric Tunnel Junction.

Benoît Manchon , Greta Segantini , Nicolas Baboux , Pedro Rojo Romeo , Rabei Barhoumi et al.
physica status solidi (RRL) - Rapid Research Letters (pss RRL), 2022, 16 (10), pp.2100585. ⟨10.1002/pssr.202100585⟩
Article dans une revue hal-03609773 v1
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Mechanical Switching of Ferroelectric Domains in 33‐200 nm‐Thick Sol‐Gel‐Grown PbZr 0.2 Ti 0.8 O 3 Films Assisted by Nanocavities

Sergio Gonzalez Casal , Xiaofei Bai , Kevin Alhada‐lahbabi , Bruno Canut , Bertrand Vilquin et al.
Advanced Electronic Materials, 2022, pp.2200077. ⟨10.1002/aelm.202200077⟩
Article dans une revue hal-03662877 v1

Elucidating Postprogramming Relaxation in Multilevel Cell‐Resistive Random Access Memory by Means of Experimental and Kinetic Monte Carlo Simulation Data

Lucas Reganaz , Eduardo Esmanhotto , Nazim Ait Abdelkader , Joel Minguet Lopez , Niccolo Castellani et al.
Physica Status Solidi A (applications and materials science), 2022, 219 (13), pp.2100753. ⟨10.1002/pssa.202100753⟩
Article dans une revue hal-03840622 v1
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Ferroelectricity Improvement in Ultra-Thin Hf0.5Zr0.5O2 Capacitors by the Insertion of a Ti Interfacial Layer

Greta Segantini , Rabei Barhoumi , Benoît Manchon , Ingrid Cañero Infante , Pedro Rojo Romeo et al.
physica status solidi (RRL) - Rapid Research Letters (pss RRL), 2022, 2100583, pp.2100583. ⟨10.1002/pssr.202100583⟩
Article dans une revue hal-03759538 v1
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Water-soluble polyethylene-oxide polymer based memristive devices

Prabir Mahato , Etienne Puyoo , Sébastien Pruvost , Damien Deleruyelle
Microelectronic Engineering, 2022, 260, pp.111806. ⟨10.1016/j.mee.2022.111806⟩
Article dans une revue hal-03840652 v1
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OxRAM+OTS optimization for Binarized Neural Network hardware implementation

Joel Minguet Lopez , Tifenn Hirtzlin , Manon Dampfhoffer , Laurent Grenouillet , Lucas Reganaz et al.
Semiconductor Science and Technology, 2021, 37 (1), pp.014001. ⟨10.1088/1361-6641/ac31e2⟩
Article dans une revue hal-03418653 v1
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Indium oxide nanoparticles for Resistive RAM integration using a compatible industrial technology

P.V. Guenery , E.A. León Pérez , K. Ayadi , N. Baboux , D. Deleruyelle et al.
Solid-State Electronics, 2021, pp.107958. ⟨10.1016/j.sse.2021.107958⟩
Article dans une revue hal-03116248 v1
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Stochastic based compact model to predict highly variable electrical characteristics of organic CBRAM devices

Silvana Guitarra , P. Mahato , D. Deleruyelle , L. Raymond , L. Trojman
Solid-State Electronics, 2021, 185, pp.108055. ⟨10.1016/j.sse.2021.108055⟩
Article dans une revue hal-03252877 v1

Conductive-bridge memory cells based on a nano-porous electrodeposited GeSbTe alloy

Charles Rebora , Ruomeng Huang , Gabriela P. Kissling , Marc Bocquet , C H (kees) De Groot et al.
Nanotechnology, 2018, ⟨10.1088/1361-6528/aae6db⟩
Article dans une revue hal-01951256 v1
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Design and Simulation of a 128 kb Embedded Nonvolatile Memory Based on a Hybrid RRAM (HfO$_2$ )/28 nm FDSOI CMOS Technology

Jean-Michel Portal , Marc Bocquet , Santhosh Onkaraiah , Mathieu Moreau , Hassen Aziza et al.
IEEE Transactions on Nanotechnology, 2017, 16, pp.677 - 686. ⟨10.1109/TNANO.2017.2703985⟩
Article dans une revue hal-01745418 v1

A multi-scale methodology connecting device physics to compact models and circuit applications for OxRAM technology

Francesco Maria Puglisi , Damien Deleruyelle , Jean-Michel Portal , Paolo Pavan , Luca Larcher
Physica Status Solidi A (applications and materials science), 2016, 213 (2), pp.289-301. ⟨10.1002/pssa.201532828⟩
Article dans une revue istex hal-01435201 v1
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Resistance controllability and variability improvement in a TaO x -based resistive memory for multilevel storage application

A. Prakash , D. Deleruyelle , J. Song , Marc Bocquet , H. Hwang
Applied Physics Letters, 2015, 106 (23), pp.233104. ⟨10.1063/1.4922446⟩
Article dans une revue hal-01737306 v1

Photo-Cross-Linked Diblock Copolymer Micelles: Quantitative Study of Photochemical Efficiency, Micelles Morphologies and their Thermal Behavior

Dao Le , Livie Liénafa , Trang N. T. Phan , Damien Deleruyelle , Renaud Bouchet et al.
Macromolecules, 2014, 47 (7), pp.2420--2429. ⟨10.1021/ma5000656⟩
Article dans une revue hal-01460517 v1

Synchronous Non-Volatile Logic Gate Design Based on Resistive Switching Memories

Weisheng Zhao , Mathieu Moreau , Erya Deng , Yue Zhang , Jean-Michel Portal et al.
IEEE Transactions on Circuits and Systems I: Regular Papers, 2014, 61 (2), pp.443 - 454. ⟨10.1109/TCSI.2013.2278332⟩
Article dans une revue hal-01743999 v1
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Robust Compact Model for Bipolar Oxide-Based Resistive Switching Memories

Marc Bocquet , Damien Deleruyelle , Hassen Aziza , Christophe Muller , Jean-Michel Portal et al.
IEEE Transactions on Electron Devices, 2014, 61 (3), pp.674 - 681. ⟨10.1109/TED.2013.2296793⟩
Article dans une revue hal-01737291 v1
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Compact Modeling Solutions for Oxide-Based Resistive Switching Memories (OxRAM)

Marc Bocquet , Hassen Aziza , Weisheng Zhao , Yue Zhang , Santhosh Onkaraiah et al.
Journal of Low Power Electronics and Applications, 2014, 4 (1), pp.1-14. ⟨10.3390/jlpea4010001⟩
Article dans une revue hal-01737320 v1

An Overview of Non-Volatile Flip-Flops Based on Emerging Memory Technologies

Jean-Michel Portal , Marc Bocquet , Mathieu Moreau , Hassen Aziza , Damien Deleruyelle et al.
Journal of Electronic Science and Technology, 2014, 12 (2), pp.173 - 181. ⟨10.3969/j.issn.1674-862X.2014.02.007⟩
Article dans une revue hal-01745646 v1

Design and analysis of crossbar architecture based on complementary resistive switching non-volatile memory cells

W. Zhao , M. Portal , W. Kang , Mathieu Moreau , Y. Zhang et al.
Journal of Parallel and Distributed Computing, 2014, 74 (6), pp.2484 - 2496. ⟨10.1016/j.jpdc.2013.08.004⟩
Article dans une revue hal-01744000 v1
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Operation and stability analysis of bipolar OxRRAM-based Non-Volatile 8T2R SRAM as solution for information back-up

H. Hraziia , Adam Makosiej , Giorgio Palma , Jean-Michel Portal , Marc Bocquet et al.
Solid-State Electronics, 2013, 90, pp.99-106. ⟨10.1016/j.sse.2013.02.045⟩
Article dans une revue hal-01744003 v1
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Non-Volatile Flip-Flop Based on Unipolar ReRAM for Power-Down Applications

Jean-Michel Portal , Marc Bocquet , Damien Deleruyelle , Christophe Muller
Journal of Low Power Electronics, 2012, 8 (1), pp.1 - 10. ⟨10.1166/jolpe.2012.1172⟩
Article dans une revue hal-01745507 v1
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Ge2Sb2Te5 layer used as solid electrolyte in conductive-bridge memory devices fabricated on flexible substrate

D. Deleruyelle , Magali Putero , T. Ouled-Khachroum , Marc Bocquet , M.V. Coulet et al.
Solid-State Electronics, 2012, ⟨10.1016/j.sse.2012.06.010⟩
Article dans une revue emse-00767177 v1

Low-power resistive switching in Au/NiO/Au nanowire arrays

S. Brivio , G. Tallarida , D. Perego , S. Franz , Damien Deleruyelle et al.
Applied Physics Letters, 2012, 101 (22), ⟨10.1063/1.4769044⟩
Article dans une revue hal-05006771 v1

Switching of nanosized filaments in NiO by conductive atomic force microscopy

F. Nardi , Damien Deleruyelle , S. Spiga , C. Muller , B. Bouteille et al.
Journal of Applied Physics, 2012, 112 (6), ⟨10.1063/1.4752032⟩
Article dans une revue hal-05006769 v1

Resistance change in memory structures integrating CuTCNQ nanowires grown on dedicated HfO2 switching layer

Ch. Muller , D. Deleruyelle , R. Müller , M. Thomas , A. Demolliens et al.
Solid-State Electronics, 2011, 56 (1), pp.168-174. ⟨10.1016/j.sse.2010.10.006⟩
Article dans une revue istex hal-02266382 v1

Evidence for correlated structural and electrical changes in a Ge2Sb2Te5 thin film from combined synchrotron X-ray techniques and sheet resistance measurements during in situ thermal annealing

Magali Putero , Toufik Ouled-Khachroum , Marie-Vanessa Coulet , Damien Deleruyelle , Eric Ziegler et al.
Journal of Applied Crystallography, 2011, 44, pp.858-864. ⟨10.1107/S0021889811024095⟩
Article dans une revue istex hal-01951268 v1
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Self-consistent physical modeling of set/reset operations in unipolar resistive-switching memories

Marc Bocquet , Damien Deleruyelle , Christophe Muller , Jean-Michel Portal
Applied Physics Letters, 2011, 98 (26), ⟨10.1063/1.3605591⟩
Article dans une revue hal-01779321 v1

Resistive switching characteristics of NiO films deposited on top of W or Cu pillar bottom electrodes

Carine Dumas , Damien Deleruyelle , A. Demolliens , Ch. Muller , S. Spiga et al.
Thin Solid Films, 2011, 519 (11), pp.3798-3803. ⟨10.1016/j.tsf.2010.12.244⟩
Article dans une revue hal-05006756 v1

Direct Observation at Nanoscale of Resistance Switching in NiO Layers by Conductive-Atomic Force Microscopy

Damien Deleruyelle , Carine Dumas , Marion Carmona , Christophe Muller , Sabina Spiga et al.
Applied Physics Express, 2011, 4 (5), pp.051101. ⟨10.1143/APEX.4.051101⟩
Article dans une revue hal-05006762 v1

Growth and In-line Characterization of Silicon Nanodots Integrated in Discrete Charge Trapping Non-volatile Memories

J. Amouroux , V. Della Marca , E. Petit , D. Deleruyelle , Magali Putero et al.
MRS Proceedings, 2011, 1337, ⟨10.1557/opl.2011.975⟩
Article dans une revue hal-01760606 v1

Accurate analysis of parasitic current overshoot during forming operation in RRAMs

S. Tirano , L. Perniola , J. Buckley , J. Cluzel , V. Jousseaume et al.
Microelectronic Engineering, 2011, 88 (7), pp.1129-1132. ⟨10.1016/j.mee.2011.03.062⟩
Article dans une revue hal-05006764 v1

Study of Ferroelectric Bi 3.25 La 0.75 Ti 3 O 12 Thin Films Deposited by Sol-Gel Method

A. Demolliens , R. Müller , L. Goux , D. Deleruyelle , D. Wouters et al.
Ferroelectrics, 2010, 397 (1), pp.112-121. ⟨10.1080/00150193.2010.484748⟩
Article dans une revue hal-02271962 v1

Solution growth of metal-organic complex CuTCNQ in small dimension interconnect structures

A. Demolliens , Ch. Muller , R. Müller , C. Turquat , L. Goux et al.
Journal of Crystal Growth, 2010, 312 (22), pp.3267-3275. ⟨10.1016/j.jcrysgro.2010.08.008⟩
Article dans une revue istex hal-02271976 v1

Electrical nanocharacterization of copper tetracyanoquinodimethane layers dedicated to resistive random access memories

Damien Deleruyelle , Christophe Muller , Julien Amouroux , Robert Müller
Applied Physics Letters, 2010, 96 (26), ⟨10.1063/1.3458596⟩
Article dans une revue hal-05006752 v1

A Dual-Gate Memory Cell with Two Inter-Poly Oxides

Jean-René Raguet , Patrick Calenzo , Romain Laffont , Damien Deleruyelle , Rachid Bouchakour et al.
Japanese Journal of Applied Physics, 2009, 48 (4S), pp.04C058. ⟨10.1143/JJAP.48.04C058⟩
Article dans une revue hal-05006735 v1

On the electrostatic behavior of floating nanoconductors

Damien Deleruyelle , G. Micolau
Solid-State Electronics, 2008, 52 (1), pp.17-24. ⟨10.1016/j.sse.2007.07.008⟩
Article dans une revue hal-05006726 v1

Degradation of floating-gate memory reliability by few electron phenomena

G. Molas , Damien Deleruyelle , B. De Salvo , G. Ghibaudo , M. Gelygely et al.
IEEE Transactions on Electron Devices, 2006, 53 (10), pp.2610-2619. ⟨10.1109/TED.2006.882284⟩
Article dans une revue hal-05006725 v1

Degradation of floating gate memory reliability by few electron phenomena

G. Molas , D. Deleruyelle , B. Desalvo , Gérard Ghibaudo , M. Gely et al.
IEEE Transactions on Electron Devices, 2006, 53, pp.2610
Article dans une revue hal-00145101 v1

Reduction of fixed charges in atomic layer deposited Al2O3 dielectrics

J. Buckley , B. De Salvo , Damien Deleruyelle , M. Gely , G. Nicotra et al.
Microelectronic Engineering, 2005, 80, pp.210-213. ⟨10.1016/j.mee.2005.04.070⟩
Article dans une revue hal-05006724 v1

Single-electron phenomena in ultra-scaled floating-gate devices and their impact on electrical characteristics

Damien Deleruyelle , G. Molas , B. Desalvo , M. Gely , D. Lafond
Solid-State Electronics, 2005, 49 (11), pp.1728-1733. ⟨10.1016/j.sse.2005.10.023⟩
Article dans une revue hal-05006722 v1

A new memory concept: the nano-multiple-tunnel-junction memory with embedded Si nano-crystals

Damien Deleruyelle , C Le Royer , B Desalvo , G Le Carval , M Gely et al.
Microelectronic Engineering, 2004, 72 (1-4), pp.399-404. ⟨10.1016/j.mee.2004.01.027⟩
Article dans une revue hal-05006721 v1

Electrical characterization of fast transient phenomena in a Si-rich based non-volatile random access memory

Damien Deleruyelle , J. Cluzel , B. De Salvo , D. Fraboulet , D. Mariolle et al.
Solid-State Electronics, 2003, 47 (10), pp.1641-1644. ⟨10.1016/S0038-1101(03)00171-0⟩
Article dans une revue hal-05006706 v1

Antiferroelectric PUND measurements on ZrO2

Grégoire Magagnin , Martine Le Berre , S. Gonzalez , Damien Deleruyelle , Bertrand Vilquin et al.
High k Workshop 2025, NamLab, Mar 2025, Dresden, Germany
Communication dans un congrès hal-05043052 v1

Antiferroelectric fluorite-based capacitors for ultra-high energy storage density applications

Grégoire Magagnin , Jordan Bouaziz , Martine Le Berre , S. Gonzalez , Infante Ingrid C. et al.
C'NANO 2025, Centre national de Compétences en Nanosciences du CNRS, Mar 2025, Paris, France
Communication dans un congrès hal-05043660 v1

Stabilization of low dimensional ferroelectric HfZrO2 film

Greta Segantini , Benoît Manchon , Jordan Bouaziz , Damien Deleruyelle , Infante Ingrid C. et al.
International Workshop on Emergent Phenomena in Low-Dimensional Ferroelectric Structures, Helmholtz-Zentrum Berlin, Jun 2024, Berlin, Germany
Communication dans un congrès hal-04749755 v1

High energy storage antiferroelectric fluorite nanosupercapacitors

Grégoire Magagnin , Jordan Bouaziz , Martine Le Berre , Sara Gonzalez , Etienne Puyoo et al.
CMD31, European Physical Society; CMD-General Conference of the Condensed Matter Division, Sep 2024, Braga, Portugal
Communication dans un congrès hal-04749716 v1

Hf(1-x)Z(x)O2 monolayers for nanosupercapacitors: a performance assessment study

Grégoire Magagnin , Jordan Bouaziz , Martine Le Berre , Sara Gonzalez , Etienne Puyoo et al.
XXXIX RSEF Physics Biennial, Real Sociedad Española de Física, Jul 2024, San Sebastian, Spain
Communication dans un congrès hal-04750245 v1

Development of ferroelectric and antiferroelectric H1-xZrxO2-based capacitors for non-volatile memories and power supply applications

Jordan Bouaziz , Grégoire Magagnin , S. Gonzalez , Martine Le Berre , Damien Deleruyelle et al.
JNTE (Journées Nationales sur les Technologies Emergentes en micro-nanofabrication) 2024, Telecom Saint-Etienne; Laboratoire Hubert Currien, Nov 2024, Saint-Etienne (FR), France
Communication dans un congrès hal-04810963 v1
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3D VNWFET-Based Standard Cell Library Design Flow: from Circuit and Physical Design to Logic Synthesis

Sara Mannaa , Cédric Marchand , Damien Deleruyelle , Bastien Deveautour , Alberto Bosio et al.
2024 IFIP/IEEE 32nd International Conference on Very Large Scale Integration (VLSI-SoC), Oct 2024, Tanger, France. pp.1-4, ⟨10.1109/VLSI-SoC62099.2024.10767812⟩
Communication dans un congrès hal-04982742 v1

Serendipity in materials science: how a simple doping leads to novel and outstanding properties in simple dielectric HfO2 !

Bertrand Vilquin , Damien Deleruyelle
ELyT Workshop 2024, Mar 2024, Sendai, Japan
Communication dans un congrès hal-04755446 v1
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VNWFET-Based Systolic Array Accelerator for Deep Neural Networks

Sara Mannaa , Paul-Antoine Matrangolo , Cédric Marchand , Damien Deleruyelle , Bastien Deveautour et al.
2024 IEEE 24th International Conference on Nanotechnology (NANO), Jul 2024, Gijon, France. pp.620-625, ⟨10.1109/NANO61778.2024.10628674⟩
Communication dans un congrès hal-04982733 v1

PE-ALD antiferroelectric fluorite for high energy storage nanosupercapacitors

Grégoire Magagnin , Jordan Bouaziz , Martine Le Berre , S. Gonzalez , Damien Deleruyelle et al.
10ème Workshop du Réseau des Acteurs Français de l'ALD, GDR RAFALD, Nov 2024, Nantes (France), France
Communication dans un congrès hal-04810885 v1
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FVLLMONTI: The 3D Neural Network Compute Cube $(N^{2}C^{2})$ Concept for Efficient Transformer Architectures Towards Speech-to-Speech Translation

Ian O'Connor , Sara Mannaa , Alberto Bosio , Bastien Deveautour , Damien Deleruyelle et al.
2024 Design, Automation & Test in Europe Conference & Exhibition (DATE), Mar 2024, Valencia, Spain. pp.1-6, ⟨10.23919/DATE58400.2024.10546700⟩
Communication dans un congrès hal-04739538 v1
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3D VNWFET-Based Standard Cell Library Design Flow: from Circuit and Physical Design to Logic Synthesis

Sara Mannaa , Cédric Marchand , Damien Deleruyelle , Bastien Deveautour , Alberto Bosio et al.
2024 IFIP/IEEE 32nd International Conference on Very Large Scale Integration (VLSI-SoC), Oct 2024, Tanger, France. pp.1-4, ⟨10.1109/VLSI-SoC62099.2024.10767812⟩
Communication dans un congrès hal-04985180 v1
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VNWFET-Based Systolic Array Accelerator for Deep Neural Networks

Sara Mannaa , Paul-Antoine Matrangolo , Cédric Marchand , Damien Deleruyelle , Bastien Deveautour et al.
2024 IEEE 24th International Conference on Nanotechnology (NANO), Jul 2024, Gijon, Spain. pp.620-625, ⟨10.1109/NANO61778.2024.10628674⟩
Communication dans un congrès hal-04985211 v1

Influence of Interfaces on the Enhanced Ferroelectricity of Ultra-Thin HZO-Based Tunnel Junctions

Greta Segantini , Benoît Manchon , Infante Ingrid C. , Matthieu Bugnet , Rabei Barhoumi et al.
ISAF-ISIF-PFM 2023 SYMPOSIUM, IEEE; UFFC, Jul 2023, Cleveland, United States
Communication dans un congrès hal-04195857 v1
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Energy-efficient Computation-In-Memory Architecture using Emerging Technologies

Rajendra Bishnoi , Sumit Diware , Anteneh Gebregiorgis , Simon Thomann , Sara Mannaa et al.
2023 International Conference on Microelectronics (ICM 2023), Dec 2023, Abu Dhabi, United Arab Emirates. pp.325-334, ⟨10.1109/ICM60448.2023.10378889⟩
Communication dans un congrès hal-04982731 v1

VNWFET-Based Technology: From Device Modelling to Standard Cell Library

Sara Mannaa , Cédric Marchand , Damien Deleruyelle , Bastien Deveautour , Ian O'Connor et al.
2023 IEEE 23rd International Conference on Nanotechnology (NANO), Jul 2023, Jeju City, France. pp.576-581, ⟨10.1109/NANO58406.2023.10231288⟩
Communication dans un congrès hal-04651775 v1

Elaboration and imprint consideration in HfZrO2 ferroelectric capacitors

Jordan Bouaziz , Greta Segantini , Benoît Manchon , Ingrid Cañero Infante , Nicolas Baboux et al.
High k Workshop 2023, NamLab, May 2023, Dresden, Germany
Communication dans un congrès hal-04136940 v1

Study of Imprint Dynamics in HZO Ferroelectric Capacitors

Benoît Manchon , Greta Segantini , Pedro Rojo Romeo , Ingrid Canero Infante , Dominique Drouin et al.
International Symposium on Applications of Ferroelectrics 2023, IEEE; UFFC, Jul 2023, Cleveland, United States
Communication dans un congrès hal-04190736 v1
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1S1R sub-threshold operation in Crossbar Arrays for Neural Networks hardware implementation

Joel Minguet Lopez , Manon Dampfhoffer , Tifenn Hirtzlin , Lucas Reganaz , Laurent Grenouillet et al.
MIXDES 2023, Jun 2023, CRACOVIE, Poland. ⟨10.23919/MIXDES58562.2023.10203226⟩
Communication dans un congrès cea-04161135 v1

How ALD deposition analysis can help PVD deposition process!

Bertrand Vilquin , Damien Deleruyelle , Jordan Bouaziz , Martine Le Berre , Céline Chevalier et al.
9ème Workshop RAFALD, GDR RAFALD, Nov 2023, Lille (France), France
Communication dans un congrès hal-04308002 v1

Interface engineering between HfZrO2 thin films and electrodes for enhanced ferroelectricity

Greta Segantini , Rabei Barhoumi , Benoît Manchon , Ingrid Canero Infante , Mathieu Bugnet et al.
15th International Meeting on Ferroelectricity - IMF 2023, Mar 2023, Tel Aviv, Israel
Communication dans un congrès hal-04055083 v1

Engineering the nano and micro structures of sputtered HfZrO2 thin films

Jordan Bouaziz , Greta Segantini , Benoît Manchon , Rabei Barhoumi , Ingrid Cañero Infante et al.
15th International Meeting on Ferroelectricity - IMF 2023, Mar 2023, Tel Aviv, Israel
Communication dans un congrès hal-04053582 v1

Interfaces engineering to enhance ferroelectricity in ultra-thin HZO CMOS compatible FTJ

Greta Segantini , Benoît Manchon , Infante Ingrid C. , Matthieu Bugnet , Pedro Rojo Romeo et al.
EMRS 2023 Fall Meeting, European Materials Research Society, Sep 2023, Warsaw (Poland), Poland
Communication dans un congrès hal-04216334 v1

Study of Imprint dynamics in CMOS compatible HZO ferroelectric capacitors

Benoît Manchon , Greta Segantini , Pedro Rojo Romeo , Dominique Drouin , Damien Deleruyelle et al.
EMRS 2023 Fall Meeting, European Materials Research Society (E-MRS), Sep 2023, Warsaw, Poland
Communication dans un congrès hal-04213060 v1
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A multiscale study of the structure, chemistry and ferroelectric properties of epitaxial sol-gel PbZr0.2Ti0.8O3 films for nanomechanical switching

Ingrid C. Infante , Sergio Gonzalez Casal , Xiaofei Bai , Kevin Alhada‐lahbabi , Sara Gonzalez et al.
ISAF-PFM-ECAPD 2022, IEEE UFFC, Jun 2022, Tours, France
Communication dans un congrès hal-03719104 v1
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1S1R sub-threshold operation in Crossbar arrays for low power BNN inference computing

J. Minguet Lopez , F. Rummens , L. Reganaz , A. Heraud , T. Hirtzlin et al.
IMW 2022 - IEEE International Memory Workshop, May 2022, Dresden, Germany. pp.1-4, ⟨10.1109/IMW52921.2022.9779253⟩
Communication dans un congrès cea-03707392 v1

Comparative Study of sub-8 nm HZO-Based Ferroelectric Tunnel Junctions with Enhanced Ferroelectricity

Greta Segantini , Benoit Manchon , Rabei Barhoumi , Pedro Rojo Romeo , Ingrid Cañero Infante et al.
ISAF-PFM-ECAPD 2022, Jun 2022, Tours, France
Communication dans un congrès hal-03715029 v1

Influence of the electrode interface on the properties of ferroelectric HfZrO2

Jordan Bouaziz , Greta Segantini , Benoît Manchon , Rabei Barhoumi , Ingrid Cañero Infante et al.
High k Workshop 2022, NamLab, Sep 2022, Dresden, Germany
Communication dans un congrès hal-03775873 v1

High temperature stability embedded ReRAM for 2x nm node and beyond

G. Molas , G. Piccolboni , A. Bricalli , A. Verdy , I. Naot et al.
2022 IEEE International Memory Workshop (IMW), May 2022, Dresden, France. pp.1-4, ⟨10.1109/IMW52921.2022.9779293⟩
Communication dans un congrès hal-03840618 v1

Study of Polarisation and Conduction Mechanisms in Ferroelectric Hf0.5Zr0.5O2 Down to Deep Cryogenic Temperature 4.2 K

Benoit Manchon , Dorian Coffineau , Greta Segantini , Nicolas Baboux , Pedro Rojo Romeo et al.
ISAF-PFM-ECAPD 2022, IEEE UFFC, Jun 2022, Tours, France
Communication dans un congrès hal-03719069 v1

Wake-Up Effect and Retention Evolutions of Hf0.5Zr0.5O2 Capacitor by Nanostructuration Engineering

Jordan Bouaziz , Greta Segantini , Benoit Manchon , Rabei Barhoumi , Infante Ingrid C. et al.
ISAF-PFM-ECAPD 2022, IEEE UFFC, Jun 2022, Tours, France
Communication dans un congrès hal-03715010 v1

How to play on the fabrication process of HfZrO2 ferroelectric thin film to enhance its physical properties

Jordan Bouaziz , Greta Segantini , Benoit Manchon , Rabei Barhoumi , Ingrid Cañero Infante et al.
EMRS 2022 Spring Meeting - Symposium N: Synthesis, processing and characterization of nanoscale multi functional oxide films VIII and 6th E-MRS & MRS-J bilateral symposium, European Materials Research Society, May 2022, Strasbourg, France
Communication dans un congrès hal-03682220 v1

Fabrication process for sub-8 nm HfZrO2-based ferroelectric tunnel junctions with enhanced properties

Greta Segantini , Benoit Manchon , Rabei Barhoumi , Pedro Rojo Romeo , Ingrid Cañero Infante et al.
EMRS 2022 Spring Meeting - Symposium E : Adaptive materials and devices for brain-inspired electronics, European Materials Research Society, May 2022, Strasbourg, France
Communication dans un congrès hal-03690321 v1

Effect of bottom electrodes on HZO thin film properties

Bertrand Vilquin , Greta Segantini , Benoit Manchon , Ingrid Cañero Infante , Pedro Rojo Romeo et al.
International Symposium on Applications of Ferroelectrics (ISAF) 2021, https://isaf-isif-pfm2021.org/, May 2021, Sydney, Australia
Communication dans un congrès hal-03274229 v1

Ge-Se-Sb-N-based OTS scaling perspectives for high-density 1S1R crossbar arrays

J. Minguet Lopez , N. Castellani , L. Grenouillet , L. Reganaz , G. Navarro et al.
2021 IEEE INTERNATIONAL MEMORY WORKSHOP (IMW), May 2021, Dresde, Germany. pp.107-110, ⟨10.1109/IMW51353.2021.9439606⟩
Communication dans un congrès hal-03622145 v1
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Modelling of vertical and ferroelectric junctionless technology for efficient 3D neural network compute cube dedicated to embedded artificial intelligence (Invited)

Cristell Maneux , Mukherjee Chhandak , Marina Deng , Maeva Dubourg , Lucas Réveil et al.
67th Annual IEEE International Electron Devices Meeting (IEDM 2021), Dec 2021, San Fransisco, United States. ⟨10.1109/IEDM19574.2021.9720572⟩
Communication dans un congrès hal-03408078 v1

Why neuromorphic computing need novel 3D technologies? A view from FVLLMONTI European project consortium (Invited)

Cristell Maneux , Mukherjee Chhandak , Marina Deng , Maeva Dubourg , Lucas Réveil et al.
High Performance Embedded Architecture and Compilation, Computing Systems Week, (HiPEAC CSW) Autumn 2021, Oct 2021, Lyon, France
Communication dans un congrès hal-03408071 v1

Role of ultra-thin Ti and Al interfacial layers in HfZrO2 ferroelectric tunnel junctions

Greta Segantini , Benoit Manchon , Pedro Rojo Romeo , Rabei Barhoumi , Nicolas Baboux et al.
EMRS 2021 Fall Meeting, European Materials Research Society, Sep 2021, Warsaw, Poland
Communication dans un congrès hal-03368741 v1
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Elucidating 1S1R operation to reduce the read voltage margin variability by stack and programming conditions optimization

J Minguet Lopez , L. Hudeley , L. Grenouillet , D Alfaro Robayo , J. Sandrini et al.
2021 IEEE International Reliability Physics Symposium (IRPS), Mar 2021, Monterey, United States. ⟨10.1109/IRPS46558.2021.9405195⟩
Communication dans un congrès hal-03333678 v1

Impact of a dielectric layer at TiN/HfZrO2 interface for ferroelectric tunnel junctions applications

Greta Segantini , Pedro Rojo Romeo , Benoit Manchon , Rabei Barhoumi , Damien Deleruyelle et al.
Journées de la matière condensée (JMC17), Société française de physique (SFP), Aug 2021, Rennes, France
Communication dans un congrès hal-03372588 v1

Electrical Characterisation of HfZrO2 Ferroelectric Tunnel Junctions for Neuromorphic Application

Benoit Manchon , Greta Segantini , Pedro Rojo Romeo , Nicolas Baboux , Rabei Barhoumi et al.
EMRS 2021 Fall Meeting, Sep 2021, Online, Canada
Communication dans un congrès hal-03354311 v1

Optimization of RRAM and OTS selector for advanced low voltage CMOS compatibility

J. Minguet Lopez , D. Alfaro Robayo , L. Grenouillet , C. Carabasse , G. Navarro et al.
2020 IEEE International Memory Workshop (IMW), May 2020, Dresden, Germany. pp.1-4, ⟨10.1109/IMW48823.2020.9108126⟩
Communication dans un congrès hal-03029496 v1

Crosspoint Memory Arrays: Principle, Strengths and Challenges

G. Molas , D. Alfaro Robayo , J. Minguet Lopez , L. Grenouillet , C. Carabasse et al.
2020 IEEE International Memory Workshop (IMW), May 2020, Dresden, Germany. pp.1-4, ⟨10.1109/IMW48823.2020.9108143⟩
Communication dans un congrès hal-03029495 v1

Reliability and Variability of 1S1R OxRAM-OTS for High Density Crossbar Integration

D. Alfaro Robayo , D. Deleruyelle , E. Vianello , N. Castellani , L. Ciampolini et al.
2019 IEEE International Electron Devices Meeting (IEDM), Dec 2019, San Francisco, United States. pp.35.3.1-35.3.4, ⟨10.1109/IEDM19573.2019.8993439⟩
Communication dans un congrès hal-03029486 v1

CBRAM devices with a water casted solid polymer electrolyte for flexible electronic applications

Prabir Mahato , Etienne Puyoo , Damien Deleruyelle , Sébastien Pruvost
2019 IEEE 14th Nanotechnology Materials and Devices Conference (NMDC), Oct 2019, Stockholm, France. pp.1-5, ⟨10.1109/NMDC47361.2019.9083996⟩
Communication dans un congrès hal-03029533 v1

Optimization of resistive memories using In2O3 nanostructures integration with a CMOS Back-End-Off-Line process

Abdelkader Souifi , Pierre-Vincent Guenery , D. Deleruyelle , Liviu Militaru , J. Moeyaert et al.
Annual Conference on Nanotechnology and Advanced Materials, Nov 2019, San Francisco, United States
Communication dans un congrès hal-03029510 v1

Indium Oxide Nanostructure Optimization for RRAM Integration on CMOS BEOL

P.-V. Guenery , E. Leon Perez , K. Ayadi , J. Moeyaert , S. Labau et al.
2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO), Jul 2018, Cork, Ireland. pp.1-2, ⟨10.1109/NANO.2018.8626323⟩
Communication dans un congrès hal-02330674 v1

Conductive Bridge Random Access Memory devices with Ecofriendly Solid Polymer Electrolyte for flexible electronics applications

Prabir Mahato , Etienne Puyoo , Sébastien Pruvost , Damien Deleruyelle
11th International Symposium on Organic Flexible Electronics (ISFOE), Jul 2018, Thessaloniki, Greece
Communication dans un congrès hal-03029545 v1
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Low Cost Diode as Selector Device for Embedded Phase Change Memory in Advanced FD-SOI Technology

Jean-Jacques Fagot , Philippe Boivin , V. Della Marca , Jeremie Postel-Pellerin , Damien Deleruyelle et al.
IEEE International Memory Workshop (IMW 2018), May 2018, Kyoto, Japan. ⟨10.1109/IMW.2018.8388839⟩
Communication dans un congrès hal-01900758 v1

Conductive Bridge Random Access Memory Devices Based on an Ecofriendly Solid Polymer Electrolyte

Prabir Mahato , Etienne Puyoo , Sébastien Pruvost , D. Deleruyelle
8th Advanced Functional Materials and Devices, Aug 2018, Leuven, Belgium
Communication dans un congrès hal-03029542 v1

Impact of a laser pulse on HfO2-based RRAM cells reliability and integrity

A. Krakovinsky , M. Bocquet , R. Wacquez , J. Coignus , Damien Deleruyelle et al.
2016 International Conference on Microelectronic Test Structures (ICMTS), Mar 2016, Yokohama, France. pp.152-156, ⟨10.1109/ICMTS.2016.7476196⟩
Communication dans un congrès hal-05006802 v1
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Impact of a Laser Pulse On HfO$_2$-based RRAM Cells Reliability and Integrity

A. Krakovinsky , Marc Bocquet , R. Wacquez , J. Coignus , D. Deleruyelle et al.
2016 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES (ICMTS), 2016, Unknown, Unknown Region. pp.152-156
Communication dans un congrès hal-01435097 v1
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Investigation of the potentialities of Vertical Resistive RAM (VRRAM) for neuromorphic applications

G. Piccolboni , G. Molas , M. Portal , R. Coquand , Marc Bocquet et al.
2015 IEEE International Electron Devices Meeting (IEDM), Dec 2015, Washington, United States. pp.17.2.1-17.2.4, ⟨10.1109/IEDM.2015.7409717⟩
Communication dans un congrès hal-01804658 v1

Fabrication and characterization of ECM memories based on a Ge2Sb2Te5 solid electrolyte

Charles Rebora , Marc Bocquet , T. Ouled-Khachroum , Magali Putero , Damien Deleruyelle
2014 10th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), Jun 2014, Grenoble, France. ⟨10.1109/PRIME.2014.6872754⟩
Communication dans un congrès hal-01804660 v1

(Invited) Temperature Impact on Reliablity and Manufacturing of Embedded HfOx-Based RRAM: a Novel Pre-coding Method for Bypassing Soldering Reflow

Sauveur Tirano , Luca Perniola , Carlo Cagli , Eric Jalaguier , Vincent Jousseaume et al.
ECS Meetings, May 2014, Orlando (Florida), United States. pp.311-313, ⟨10.1149/06102.0311ecst⟩
Communication dans un congrès hal-05006795 v1
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Synchronous Full-Adder based on Complementary Resistive Switching Memory Cells

Y Zhang , Erya y Deng , Jacques-Olivier O Klein , Damien Querlioz , Dafiné Ravelosona et al.
11th International New Circuits and Systems Conference (NEWCAS), Jun 2013, Paris, France. ⟨10.1109/NEWCAS.2013.6573578⟩
Communication dans un congrès hal-01840795 v1

Compact modeling solutions for OxRAM memories

Marc Bocquet , Damien Deleruyelle , Hassen Aziza , Christophe Muller , Jean-Michel Portal
2013 IEEE Faible Tension Faible Consommation (FTFC), Jun 2013, Paris, France. pp.1-4, ⟨10.1109/FTFC.2013.6577779⟩
Communication dans un congrès hal-05006780 v1
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Analytical study of complementary memristive synchronous logic gates

Jean-Michel Portal , Mathieu Moreau , Marc Bocquet , Hassen Aziza , Damien Deleruyelle et al.
2013 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), Jul 2013, Brooklyn, United States. ⟨10.1109/NanoArch.2013.6623047⟩
Communication dans un congrès hal-01745759 v1
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Analytical study of complementary memristive synchronous logic gates

Jean-Michel Portal , M. Moreau , Marc Bocquet , Hassen Aziza , D. Deleruyelle et al.
2013 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), Jul 2013, Brooklyn, France. ⟨10.1109/NanoArch.2013.6623047⟩
Communication dans un congrès hal-01827052 v1
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Crossbar architecture based on 2R complementary resistive switching memory cell

Weisheng Zhao , Y Zhang , Jacques-Olivier Klein , Damien S Querlioz , Dafine Ravelosona et al.
2012 IEEE/ACM International Symposium on Nanoscale Architectures , Jul 2012, Amsterdam, Netherlands. ⟨10.1145/2765491.2765508⟩
Communication dans un congrès hal-01745351 v1

Experimental and theoretical study of electrode effects in HfO2 based RRAM

C. Cagli , J. Buckley , V. Jousseaume , T. Cabout , A. Salaun et al.
2011 IEEE International Electron Devices Meeting (IEDM), Dec 2011, Washington, France. pp.28.7.1-28.7.4, ⟨10.1109/IEDM.2011.6131634⟩
Communication dans un congrès hal-05006759 v1
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Design challenges for prototypical and emerging memory concepts relying on resistance switching

Christophe Muller , D. Deleruyelle , O. Ginez , Jean-Michel Portal , Marc Bocquet
2011 IEEE Custom Integrated Circuits Conference (CICC 2011), Sep 2011, San Jose, CA, United States. ⟨10.1109/CICC.2011.6055316⟩
Communication dans un congrès hal-01745644 v1
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On the electrical variability of resistive-switching memory devices based on NiO oxide

S Tirano , Marc Bocquet , Christophe Muller , D. Deleruyelle , L. Perniola et al.
2011 IEEE 42nd Semiconductor Interface Specialists Conference (SISC), Dec 2011, Arlington, United States
Communication dans un congrès hal-01745633 v1

Interface Study of SiO 2 / HfO 2 /SiO 2 Stacks Used as InterPoly Dielectric for Future Generations of Embedded Flash Memories

Alexandre Guiraud , Nicolas Breil , Mickaël Gros-Jean , Damien Deleruyelle , Gilles Micolau et al.
MRS Online Proceedings Library, Apr 2010, San Francisco, United States. pp.1252-I07-08, ⟨10.1557/proc-1252-i07-08⟩
Communication dans un congrès hal-05006750 v1

Reliability of NiO-Based Resistive Switching Memory (ReRAM) Elements with Pillar W Bottom Electrode

A. Demolliens , Ch. Muller , Damien Deleruyelle , S. Spiga , E. Cianci et al.
2009 IEEE International Memory Workshop (IMW), May 2009, Monterey, France. pp.1-3, ⟨10.1109/IMW.2009.5090606⟩
Communication dans un congrès hal-05006734 v1

From micrometric to nanometric scale switching of CuTCNQ-based non-volatile memory structures

M. Thomas , A. Demolliens , Ch. Turquat , Damien Deleruyelle , Ch. Muller et al.
2008 9th Annual Non-Volatile Memory Technology Symposium, Nov 2008, Pacific Grove, France. pp.1-4, ⟨10.1109/NVMT.2008.4731190⟩
Communication dans un congrès hal-05006732 v1

Investigation of a new three bits cell concept

J.R. Raguet , P. Calenzo , Damien Deleruyelle , R. Laffont , A. Guiraud et al.
2008 9th Annual Non-Volatile Memory Technology Symposium (NVMTS), Nov 2008, Pacific Grove, France. pp.1-5, ⟨10.1109/NVMT.2008.4731202⟩
Communication dans un congrès hal-05006727 v1

Integration of resistive switching NiO in small via structures from localized oxidation of nickel metallic layer

L. Courtade , C. Turquat , J.G. Lisoni , L. Goux , D.J. Wouters et al.
ESSDERC 2008 - 38th European Solid-State Device Research Conference, Sep 2008, Edinburgh, United Kingdom. pp.218-221
Communication dans un congrès hal-02271988 v1

Impact of few electron phenomena on floating-gate memory reliability

G. Molas , Damien Deleruyelle , B. De Salvo , G. Ghibaudo , M. Gely et al.
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004., Mar 2004, San Francisco, France. pp.877-880, ⟨10.1109/IEDM.2004.1419320⟩
Communication dans un congrès hal-05006712 v1

A new memory concept: the Nano-Multiple-Tunnel-Junction memory with embedded Si nano-crystals

D. Deleruyelle , C. Leroyer , B. de Salvo , G. Lecarval , M. Gely et al.
Silicon Nanoelectronics Workshop, 2002, Honolulu, United States. pp.Volume 72, Issues 1-4, Pages 399-404
Communication dans un congrès hal-00485182 v1

Effect of high-k materials in the control dielectric stack of nanocrystal memories

E. Spitale , D. Corso , I. Crupi , G. Nicotra , S. Lombardo et al.
Proceedings of the 34th European Solid-State Device Research Conference, Sep 2004, Leuven, France. pp.161-164, ⟨10.1109/ESSDER.2004.1356514⟩
Communication dans un congrès hal-05006717 v1

Electrical characterization of memory cell structures using multiple tunnels junctions with embedded Si nanocrystals

D. Deleruyelle , D. Fraboulet , B. de Salvo , N. Buffet , D. Mariolle et al.
Silicon Nano-electronics Workshop 2002, 2002, Honolulu, United States
Communication dans un congrès hal-00484534 v1

Emerging Memory Concepts

Christophe Muller , Damien Deleruyelle , Olivier Ginez
Design Technology for Heterogeneous Embedded Systems, Springer Netherlands, pp.339-364, 2012, ⟨10.1007/978-94-007-1125-9_16⟩
Chapitre d'ouvrage istex hal-03505264 v1

A single Nano-Dot Embedded in a Plate Capacitor

Damien Deleruyelle , Gilles Micolau
Sattler, Klaus D. Handbook of Nanophysics - Nanoelectronics and Nanophotonics, CRC Press, 2010, 978-1-4200-7550-2
Chapitre d'ouvrage hal-03505265 v1