Dominique Deresmes
185
Documents
Présentation
Research engineer
CNRS
IEMN
Pôle Champ Proche (PCP): (Scanning Probe Microscopy Facility)
Publications
Pulvérisation réactive pour le dépôt de nitrure de vanadium comme électrodes de micro-supercondensateurs performants et stables en cyclageMatériaux 2022, Fédération Française des Matériaux, Oct 2022, Lille, France
Communication dans un congrès
hal-03876159v1
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Imagerie à haute résolution d’assemblages moléculaires par nc-AFM et KPFM à basse température sur Si(111):B23eme forum des microscopies à sondes locales, Mar 2022, Saint-Valery-sur-Somme, France
Communication dans un congrès
hal-03613296v1
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Electron emission device made from planar nanowiresJournées du GDR Nanosciences with near-field microscopy under ultra high vacuum 2022, Nov 2022, Paris, France
Communication dans un congrès
hal-03955837v1
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First attempts of WSe2 growth on GaP(111)B substrates by MBEInternational Conference on Molecular Beam Epitaxy (ICMBE 2022), Sep 2022, Sheffield, United Kingdom. 2 p
Communication dans un congrès
hal-04172997v1
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Correlation between nanoscale thermal and electrical conductivity in PEDOT:OTf thin films23eme forum des microscopies à sondes locales, Mar 2022, Saint-Valery-sur-Somme, France
Communication dans un congrès
hal-03613663v1
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Electric properties of silver nanowires by multi-probe characterization23eme forum des microscopies à sondes locales, Mar 2022, Saint-Valery-sur-Somme, France
Communication dans un congrès
hal-03613587v1
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Molecular beam epitaxial growth of 2D-boron nitride on Ni substrates22nd International Conference on Molecualr Beam Epitaxy, University of Sheffield (UK), Sep 2022, Sheffield, United Kingdom
Communication dans un congrès
hal-04438264v1
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Resistance measurement of individual Ag nanowires and interconnectsJournées du GDR Nanosciences with near-field microscopy under ultra high vacuum 2021, Nov 2021, Toulouse, France
Communication dans un congrès
hal-03606007v1
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High resolution nc-AFM and KPFM imaging of dipolar molecule assemblies on Si(111):B by stiff- probe non-contact AFM at low-temperatureMaterials Research Society meeting, Nov 2021, Boston, United States
Communication dans un congrès
hal-03456172v1
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High resolution nc-AFM and KPFM imaging of dipolar molecule assemblies on Si(111):B by stiff-probe non-contact AFM at low-temperatureJournées du GdR Nanosciences en champ proche sous ultra-vide 2021, Nov 2021, Toulouse, France
Communication dans un congrès
hal-03456169v1
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Operation of near-field scanning millimeter-wave microscopy up to 67 GHz under scanning electron microscopy visionIEEE MTT International Microwave Symposium, IMS 2020, Jun 2020, Los Angeles (On-line event), United States. pp.95-98, ⟨10.1109/IMS30576.2020.9224090⟩
Communication dans un congrès
hal-03022574v1
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Powering the Internet of Things with planar and 3D micro-supercapacitors: dream or reality?PRiME 2020 (Pacific Rim Meeting, ECS, ECSJ, KECS Joint Meeting), Oct 2020, Visioconférence, Japan
Communication dans un congrès
hal-04303134v1
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High resolution imaging of molecular assemblies on Si(111):B by non-contact AFM and Kelvin probe spectroscopy at low temperatureScience et Technologie des Systèmes pi-Conjugués, Oct 2019, Arras, France
Communication dans un congrès
hal-02376865v1
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Étude par C-AFM de substrats magnétiques fonctionnalisés par des SAMs photo-commutablesSPIC 2019: Troisième congrès national Sciences et Technologies des systèmes pi-conjugués, Oct 2019, Arras, France
Communication dans un congrès
hal-02776445v1
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High resolution imaging of molecular assemblies on a semiconductor surface by non-contact AFM at low temperatureInternational Conference on Non-contact Atomic Force Microscopy, Sep 2018, Porvoo, Finland
Communication dans un congrès
hal-02366558v1
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Étude par C-AFM de substrats magnétiques fonctionnalisés par des SAMs photo-commutablesForum des Microscopies à Sonde Locale, Mar 2018, La Rochelle, France
Communication dans un congrès
hal-02774838v1
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Electromagnetic Modeling in Near-Field Scanning Microwave Microscopy Highlighting Limitations in Spatial and Electrical Resolutions2018 IEEE MTT-S International Conference on Numerical Electromagnetic and Multiphysics Modeling and Optimization (NEMO), Aug 2018, Reykjavik, Iceland. pp.1-4, ⟨10.1109/NEMO.2018.8503487⟩
Communication dans un congrès
hal-02155769v1
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«Nanostructured Lead-Free La₂Ti₂O₇ Piezoelectric Islands Obtained by Ion-Beam Etching»International Conference Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials – PFM 2014, 2014, Ekaterinburg, Russia
Communication dans un congrès
hal-01702958v1
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Noise performance of frequency modulation Kelvin force microscopy5th International Workshop on Advanced Scanning Probe Microscopy Techniques, ASXMT 2014, 2014, Karlsruhe, Germany
Communication dans un congrès
hal-00951552v1
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Ion-beam effect on functional properties of La2Ti2O7 piezoelectric thin films and nanoislandsEuropean Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium I - Solution processing and properties of functional oxide thin films and nanostructures, 2014, Lille, France
Communication dans un congrès
hal-00964120v1
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Toward a better understanding of the interfacial growth mechanism of dairy fouling at a stainless steel surface : a multiscale approach27th Conference of European Colloid and Interface Society, ECIS 2013, 2013, Sofia, Bulgaria
Communication dans un congrès
hal-00878881v1
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«Growth and Characterization of New Piezoelectric Nanostructures with Low Environmental Impact»Journées Nanosciences et Nanotechnologies du Nord-Ouest, 2013, Rennes, France
Communication dans un congrès
hal-01727062v1
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Doped semiconductor nanocrystal junctions studied by Kelvin probe and non-contact atomic force microscopyMaterials Research Society Fall Meeting, MRS Fall 2013, Symposium LL : Advances in Scanning Probe Microscopy, 2013, Boston, MA, United States
Communication dans un congrès
hal-00944018v1
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Fabrication of La2Ti2O7 nanostructures by focused Ga3+ ion beam and characterization by piezoresponse force microscopyJoint 21th International Symposium on Applications of Ferroelectrics, ISAF 2012, 11st European Conference on the Applications of Polar Dielectrics, ECAPD 2012, 4th International Symposium on Piezoresponse Force Microscopy and Nanoscale Phenomena in P, 2012, Aveiro, Portugal. pp.1-3, ⟨10.1109/ISAF.2012.6297772⟩
Communication dans un congrès
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Charge transfers from doped silicon nanocrystals probed by non-contact atomic force microscopyInternational Conference on Nanoscience and Technology, ICN+T 2012, Jul 2012, Paris, France
Communication dans un congrès
hal-00797758v1
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Fabrication par FIB de nano-plots piézoélectriques de La2Ti2O7 et caractérisation électrique locale par SPM12èmes Journées de Caractérisation Microondes et Matériaux, JCMM 2012, 2012, Chambéry, France. session S6, papier ID22, 1-3
Communication dans un congrès
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Investigation of the negative differential resistance reproducibility in AlN/GaN double barrier resonant tunneling diodes in DC operation9th International Conference on Nitride Semiconductors, ICNS-9, Jul 2011, Glasgow, United Kingdom
Communication dans un congrès
hal-00807608v1
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Fabrication of nanostructured piezoelectric thin films by FIB and nanoscale characterization by piezoresponse force microscopyEuropean Materials Research Society Spring Meeting, E-MRS Spring 2011, Symposium D : Synthesis, processing and characterization of nanoscale multi functional oxide films III, 2011, Nice, France
Communication dans un congrès
hal-00807666v1
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Sol-gel synthesis and thin films development of CuIn(Ga)S2 : an energy solar scavenging device used for wireless autonomous systemsInternational Photovoltaic Technical Conference, PVTC 2011, " Thin Film & Advanced Solutions 2011 ", 2011, Aix-en-Provence, France
Communication dans un congrès
hal-00591388v1
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Electrode size effect under PFM characterization of PZT-film on silicon structures with micro- and nanometric top electrodesJoint 20th IEEE International Symposium on Applications of Ferroelectrics and 2011 International Symposium on Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials, ISAF-PFM-2011, 2011, Vancouver, Canada. pp.1-3, ⟨10.1109/ISAF.2011.6014002⟩
Communication dans un congrès
hal-00800402v1
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Asymmetry of polarization reversal and current-voltage characteristics of PZT-film on silicon structures12th European Meeting on Ferroelectricity, EMF 2011, 2011, Bordeaux, France
Communication dans un congrès
hal-00807659v1
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Performance en terme de bruit vers bande passante d'un microscope Kelvin mode détection de fréquence (FM-KFM)Forum des Microscopies à Sonde Locale, 2010, Mittelwihr, France
Communication dans un congrès
hal-00574421v1
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Hydrothermal growth of high quality, vertically aligned ZnO nanorods on silicon substrate13èmes Journées Nano, Micro et Optoélectronique, JNMO 2010, 2010, Les Issambres, France
Communication dans un congrès
hal-00574122v1
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Resolving dopants in semiconductors by scanning tunneling microscopyJournées Thématiques du GdR Nanofils Semiconducteurs - Dopage des nanofils semiconducteurs, 2010, Rouen, France
Communication dans un congrès
hal-00808236v1
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PZT films etched by focused Ga+ ion beam : study of ion damageEuropean Materials Research Society Spring Meeting, E-MRS Spring 2009, Symposium H : Synthesis, Processing and Characterization of Nanoscale Multi Functional Oxide Films II, 2009, Strasbourg, France
Communication dans un congrès
hal-00575750v1
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Charge transfer from doped silicon nanocrystals12th International Conference on Noncontact Atomic Force Microscopy, NC-AFM 2009, Aug 2009, New Haven, CT, United States
Communication dans un congrès
hal-00575399v1
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Reversible electro-optical switch of self-assembled monolayers of azobenzene-derivatized oligothiophenes grafted on goldMaterials Research Society Spring Meeting, 2009, San Francisco, CA, United States
Communication dans un congrès
hal-00574927v1
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Kelvin force microscopy for n- and p-type GaN surface characterizationWorskhop on Compound Semiconductor Materials and Devices, WOCSEMMAD'09, 2009, Fort Myers, FL, United States
Communication dans un congrès
hal-00575345v1
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PZT films etched by focused Ga3+ ion beam : studies of ion damage and post annealing treatment effectsInternational Symposium on Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials, PFM 2009, 2009, Aveiro, Portugal
Communication dans un congrès
hal-00575744v1
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La plate-forme nanocaractérisation et microscopie en champ proche de l'IEMNForum des Microscopies à Sonde Locale, 2009, Hardelot, France
Communication dans un congrès
hal-00575396v1
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Charge transfer from doped silicon nanocrystals10th Trends in Nanotechnology International Conference, TNT2009, Sep 2009, Barcelona, Spain
Communication dans un congrès
hal-00575400v1
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Interrupteur optique réversible constitué d'une monocouche auto-assemblée de molécules azobenzènesForum des microscopies à sonde locale, 2009, Hardelot, France
Communication dans un congrès
hal-00574902v1
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Comportement dynamique de microscopie Kelvin en mode AM sous ultravideForum des Microscopies à Sonde Locale, 2009, Hardelot, France
Communication dans un congrès
hal-00575395v1
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Kelvin probe force microscopy of charge transfer mechanisms from doped silicon nanocrystalsMaterials Research Society Fall Meeting, MRS Fall 2009, Symposium OO : Dynamic Scanning Probes - Imaging, Characterization, and Manipulation, Nov 2009, Boston, MA, United States
Communication dans un congrès
hal-00575344v1
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High 'on-off' conductance ratio in self-assembled monolayers of azobenzene derivatized oligothiophenes grafted on gold10th European Conference on Molecular Electronics, ECME 2009, 2009, Copenhagen, Denmark
Communication dans un congrès
hal-00574930v1
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Electrostatic properties of doped silicon nanocrystals probed by Kelvin force microscopyForum des Microscopies à Sonde Locale, Mar 2009, Neufchâtel, France
Communication dans un congrès
hal-00575340v1
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Interrupteur optique réversible constitué d'une monocouche auto-assemblée de dérivés azobenzènesColloque Matériaux et Nanostructures Pi-conjugés, MNPC09, 2009, Arcachon, France
Communication dans un congrès
hal-00574908v1
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Propriétés électro-optiques de commutateurs moléculaires à base de dérivés oligothiophène-azobenzèneVingt-deuxièmes Entretiens France-Québec Jacques Cartier, 'Polymères et oligomères pour l'optoélectronique et ses applications', 2009, Grenoble, France
Communication dans un congrès
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Optimisation de la réponse fréquentielle des montages KFM et exemples d'application à des dispositifs à nanotube de carboneForum des Microscopies à Sonde Locale, 2008, La Londe les Maures, France
Communication dans un congrès
hal-00376237v1
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Reversible electro-optical switch of self-assembled monolayers of azobenzene-derivatized oligothiophenes grafted on gold4th International Meeting on Molecular Electronics, ElecMol'08, 2008, _, France
Communication dans un congrès
hal-00361583v1
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Interrupteur optique réversible constitué d'une monocouche auto-assemblée de molécules azobenzènes11ème Journées de la Matière Condensée, JMC11, 2008, Strasbourg, France
Communication dans un congrès
hal-00361579v1
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Reversible electro-optical switch of self-assembled monolayers of azobenzene-derivatized oligothiophenes grafted on gold9th International Conference on Molecular Electronics, Molecular Electronics IX, 2008, Kauai, HI, United States
Communication dans un congrès
hal-00361963v1
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Self-assembled monolayer of pi-conjugated molecules on gold for electric and photoelectric studies4th International Workshop on Electronics Structure and Processes at Molecular-based Interfaces, ESPMI IV, 2008, Princeton, NJ, United States
Communication dans un congrès
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Kelvin force microscopy on GaN wide gap materialsMaterials Research Society Fall Meeting, Symposium B : Nanoscale Phenomena in Functional Materials by Scanning Probe Microscopy, Nov 2007, Boston, MA, United States
Communication dans un congrès
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Electronic transport through alkylthiol monolayers under mechanical stress measured by Conducting-AFM9th European Conference on Molecular Electronics, ECME 2007, 2007, Metz, France
Communication dans un congrès
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Kelvin force microscopy on GaN material and devices16th European Workshop on Heterostructure Technology, HeTech'07, 2007, Fréjus, France
Communication dans un congrès
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Caractérisation électronique sous contraintes mécaniques de monocouches auto-assemblées par Conducting-AFM10ème Forum des Microscopies à Sonde Locale, 2007, Troyes, France
Communication dans un congrès
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Electronic transport through alkylthiol monolayers under mechanical stress measured by Conducting-AFMEuropean Materials Research Society Spring Meeting, Symposium K : Nanoscale self-assembly and patterning, 2007, Strasbourg, France
Communication dans un congrès
hal-00285224v1
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Kelvin force microscopy frequency response optimization and application to nanowire/nanotube devices under polarizationMaterials Research Society Fall Meeting, Symposium B : Nanoscale Phenomena in Functional Materials by Scanning Probe Microscopy, 2007, Boston, MA, United States
Communication dans un congrès
hal-00285290v1
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PZT films etched by focused Ga+ ion beam : study of ion damage and post annealing treatment effectsProceedings of the 19th International Symposium on Integrated Ferroelectrics, ISIF-19, 2007, Bordeaux, France
Communication dans un congrès
hal-00367386v1
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Analyse du potentiel de surface du GaN par microscopie à sonde de Kelvin (KFM)10ème Forum des Microscopies à Sonde Locale, Mar 2007, Troyes, France
Communication dans un congrès
hal-00285285v1
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Electronic transport through alkylthiol monolayers under mechanical stress measured by Conducting-AFMMatériaux et Nanostructures Pi-Conjugués, MNPC07, 2007, Le Grau du Roi, France
Communication dans un congrès
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Running current through a single non resonant quantum state in silicon4th International Conference on Scanning Probe Spectroscopy and 1st International Workshop on Spin-Polarized Scanning Tunneling Microscopy, SPS'06 SPSTM-1, 2006, Hamburg, Germany
Communication dans un congrès
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Running current through a single non resonant quantum state in siliconEuropean Conference on Surface Science, ECOSS 24, 2006, Paris, France
Communication dans un congrès
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Electronic transport through alkylthiol monolayers under mechanical stress measured by Conducting-AFMThird Meeting on Molecular Electronics, ElecMol'06, 2006, Grenoble, France
Communication dans un congrès
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Réseau organique, atome artificiel et liaison pendante silicium : apport de la spectroscopie STM10èmes Journées de la Matière Condensée, JMC10, 2006, Toulouse, France
Communication dans un congrès
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Electric force microscopy of individually charged silicon nanoparticlesMaterials Research Society 2005 Fall Meeting, Nov 2005, Boston, MA, United States
Communication dans un congrès
hal-00126439v1
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Electric force microscopy of individually charged semiconductor nanoparticlesTrends in Nanotechnology, TNT 2005, Aug 2005, Oviedo, Spain
Communication dans un congrès
hal-00126431v1
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Semiconductor surface reconstructions of the Si(100) surface at 5K52nd International Symposium and Exhibition of the American Vacuum Society, AVS-52, 2005, Boston, MA, United States
Communication dans un congrès
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Study of titanium silicides nanowires on Si(111) by scanning tunnelling microscopyGDR Nanoélectronique - Journées Matériaux Semi-conducteurs pour Nanostructures, 2005, Villeneuve d'Ascq, France
Communication dans un congrès
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Tensile stress determination in silicon nitride membrane by AFM characterization2005, pp.828-831
Communication dans un congrès
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Acceptor states in GaAs studied by X-STS at 5K13th International Conference on Scanning Tunneling Microscopy/Spectroscopy and Related Techniques, STM'05, 2005, Sapporo, Japan
Communication dans un congrès
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Charge transport in DNA probed by C-AFM and EFMMaterials Research Society Spring Meeting, 2004, San Francisco, CA, United States
Communication dans un congrès
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Electrostatic force microscopy of individuallt charged silicon nanoparticlesMRS Boston Symposium F, Nov 2004, Boston, United States
Communication dans un congrès
hal-00485175v1
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Charge transport in DNA5th International Symposium on MEMS and Nanotechnology, 2004, Costa Mesa, CA, United States
Communication dans un congrès
hal-00140750v1
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Electric force microscopy of individually charged semiconductor nanoparticlesMaterials Research Society Fall Meeting, 2003, Boston, MA, United States
Communication dans un congrès
hal-00146615v1
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Controlled charge injection in semiconductor nanoparticles12th International Conference on Scanning Tunneling Microscopy, Spectroscopy and Related Techniques, STM'03, 2003, Eindhoven, Netherlands
Communication dans un congrès
hal-00146616v1
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Injection contrôlée de charges dans des nanoparticules individuelles de siliciumForum des microscopies à sonde locale, 2003, Montpellier, France
Communication dans un congrès
hal-00146612v1
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Electric force microscopy of individually charged semiconductor nanoparticles on conductive substrates : quantitative charge measurements and dipole-dipole interactions12th International Conference on Scanning Tunneling Microscopy, Spectroscopy and Related Techniques, STM'03, 2003, Eindhoven, Netherlands
Communication dans un congrès
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Unusual density of states in brick-shaped PbSe nanocrystalsAmerican Physical Society March Meeting, 2003, Austin, TX, United States
Communication dans un congrès
hal-00146641v1
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Un modèle analytique et quantitatif pour la microscopie à force électrique de nanoparticules chargées sur substrats conducteursForum des microscopies à sonde locale, 2003, Montpellier, France
Communication dans un congrès
hal-00146642v1
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Charge transport in DNAMaterials Research Society Fall Meeting, 2003, Boston, MA, United States
Communication dans un congrès
hal-00146174v1
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Some key features of the Ga1-xInxAs surface reactivity to phosphorus2002, pp.107-108
Communication dans un congrès
hal-00148666v1
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Etude par EFM des propriétés de charge d'ilots semiconducteurs de taille nanométriqueForum des microscopies à sonde locale, 2002, Spa, Belgique
Communication dans un congrès
hal-00149683v1
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Controlled charge injection in semiconductor nanoparticlesProceedings of the 2002 Materials Research Society Fall Meeting, 2002, Boston, MA, United States
Communication dans un congrès
hal-00149956v1
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Controlled charge injection in semiconductor nanocrystals2002, 2 pp
Communication dans un congrès
hal-00149667v1
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Etude de la réactivité des surfaces d'alliages GaInAs (100) à un flux de phosphore9èmes Journées Nationales Microélectronique et Optoélectronique, JNMO 2002, 2002, Saint Aygulf, France
Communication dans un congrès
hal-00148676v1
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Etude par EFM de la charge/décharge d'îlots semiconducteurs de taille nanométriqueJournées d'utilisateurs nanoscope, 2001, Dijon, France
Communication dans un congrès
hal-00152560v1
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Growth of strained Ga1-xInxP layers on GaP (001) by gas source molecular beam epitaxy : similarities and differences with the growth of strained arsenides2000, pp.255-259
Communication dans un congrès
hal-00158443v1
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Croissance d'alliages GaInP contraints par épitaxie à jets moléculaires à sources gazeuses13ème Séminaire National sur l'Epitaxie par Jets Moléculaires, EJM 2000, 2000, Saint Aygulf, France
Communication dans un congrès
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Growth of strained Ga1-xInxP layers on GaP (001) by gas source molecular beam epitaxy : comparison with the GaInAs/GaAs system2000, pp.231-234
Communication dans un congrès
hal-00158442v1
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Evaluation of damages induced by Ga
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Ga3+ focused ion beam for piezo electric nano structuration fabricationGoorsky M. Ion implantation, InTech, chapter 13, 315-326, 2012, ISBN 978-953-51-0634-0. ⟨10.5772/34139⟩
Chapitre d'ouvrage
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Capacitive crosstalk in AM-mode KPFMSadewasser S., Glatzel T. Kelvin probe force microscopy - Measuring and compensating electrostatic forces, Springer, Volume 48, Part 1, Chapter 3, 25-44, 2012, Springer Series in Surface Science, ISBN 978-3-642-22565-9. ⟨10.1007/978-3-642-22566-6_3⟩
Chapitre d'ouvrage
hal-00798961v1
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Mesure du potentiel de surface d'un matériauFrance, N° de brevet: FR2956484 (A1). 2011
Brevet
hal-00616299v1
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Conductivity of DNA probed by conducting-atomic force microscopy: effects of contact electrode, DNA structure, surface interactions.2004
Pré-publication, Document de travail
hal-00001605v1
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Localization and delocalization of charges injected in DNA2004
Pré-publication, Document de travail
hal-00002773v1
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Charge transport in l-DNA probed by conducting-AFM, and relationship with its structure2003
Pré-publication, Document de travail
hal-00000703v1
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