Dominique Planson

387
Documents

Présentation

M. Dominique Planson

Téléphone : 04 72 43 87 24

Ingénieur INSA-GE, option Micro-électronique (91), DEA-DEI (91), Docteur INSA (1994)

Publications

Publications

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Electrical Characterization of HV (10 Kv) Power 4H-SiC Bipolar Junction Transistor

Pierre Brosselard , Brenda Fosso-Sob , Dominique Planson , Pascal Bevilacqua , Camille Sonneville et al.

Key Engineering Materials, 2025, 1021, pp.1-6. ⟨10.4028/p-T0Vjdb⟩

Article dans une revue hal-05293324v1
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Matching Physical and Electrical Measurements (OBIC) to Simulation (FEM) on High Voltage Bipolar Diodes

Dominique Planson , Camille Sonneville , Pascal Bevilacqua , Pierre Brosselard , Mihai Lazar et al.

Key Engineering Materials, 2025, 1023, pp.1-6. ⟨10.4028/p-0v5tyE⟩

Article dans une revue hal-05293312v1
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Modified TCAD simulation approach for 4H-SiC JBS diode to investigate electron trapping effects

Shikha Kumari , Pierre Brosselard , Dominique Planson , P. Vigneshwara Raja

Microelectronics Reliability, 2025, 173, pp.115876. ⟨10.1016/j.microrel.2025.115876⟩

Article dans une revue hal-05196660v1
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Physical and electrical characterizations of low n-doped MOCVD GaN-on-sapphire layers for power electronics applications

Ndembi Ignoumba-Ignoumba , Camille Sonneville , Adrien Bidaud , Pierre Brosselard , Eric Frayssinet et al.

Power Electronic Devices and Components, 2025, 11, pp.100100. ⟨10.1016/j.pedc.2025.100100⟩

Article dans une revue hal-05099383v1

New insights in vertical GaN-on-GaN Schottky diode by Raman, cathodoluminescence and electrical characterizations

Vishwajeet Maurya , Daniel Alquier , Maroun Dagher , Camille Sonneville , Dominique Planson et al.

Materials Science in Semiconductor Processing, 2025, 198, pp.109681. ⟨10.1016/j.mssp.2025.109681⟩

Article dans une revue hal-05099324v1
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Design and Characterization of an Optical 4H-SiC Bipolar Junction Transistor

Pierre Brosselard , Dominique Planson , Dominique Tournier , Pascal Bevilacqua , Camille Sonneville et al.

Solid State Phenomena, 2024, 360, pp.127-131. ⟨10.4028/p-sj87Lx⟩

Article dans une revue hal-04677726v1
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A Novel Isolation Approach for GaN-Based Power Integrated Devices

Zahraa Zaidan , Nedal Al Taradeh , Mohammed Benjelloun , Christophe Rodriguez , Ali Soltani et al.

Micromachines, 2024, 15 (10), pp.1223. ⟨10.3390/mi15101223⟩

Article dans une revue hal-04850893v1
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Concept and technology for full monolithic MOSFET and JBS vertical integration in multi-terminal 4H-SiC power converters

Ralph Makhoul , Nour Beydoun , Abdelhakim Bourennane , Luong Viet Phung , Frédéric Richardeau et al.

Solid State Phenomena, 2024, 358, pp.23-30. ⟨10.4028/p-pzTJ4o⟩

Article dans une revue hal-04697223v1
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Visualization of P+ JTE embedded rings used for peripheral protection of high voltage Schottky diodes by the Optical Beam Induced Current (OBIC) technique

Dominique Planson , Dominique Tournier , Pascal Bevilacqua , Camille Sonneville , Pierre Brosselard et al.

Solid State Phenomena, 2024, 360, pp.119-125. ⟨10.4028/p-d65YuN⟩

Article dans une revue hal-04677706v1
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Advanced characterization of SiC devices by optical beam induced current (OBIC): Experimental and simulation results

Dominique Planson , Dominique Tournier , Camille Sonneville , Pascal Bevilacqua , Luong Viet Phung et al.

Materials Science in Semiconductor Processing, 2024, 178, pp.108444. ⟨10.1016/j.mssp.2024.108444⟩

Article dans une revue hal-04664143v1
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Electrically active traps in 4H-silicon carbide (4H-SiC) PiN power diodes

P. Vigneshwara Raja , Christophe Raynaud , Besar Asllani , Hervé Morel , Dominique Planson

Journal of Materials Science: Materials in Electronics, 2023, 34 (17), pp.1383. ⟨10.1007/s10854-023-10813-z⟩

Article dans une revue hal-04199489v1
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First results on 1.2 kV SiC MOSFET body diode robustness tests

Hassan Hamad , Dominique Tournier , Jean-Michel Reynes , Olivier Perrotin , David Trémouilles et al.

Microelectronics Reliability, 2023, 151, pp.115264. ⟨10.1016/j.microrel.2023.115264⟩

Article dans une revue hal-04282544v1
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Micro-Raman Spectroscopy Study of Vertical GaN Schottky Diode

Atse Julien Eric N’dohi , Camille Sonneville , Soufiane Saidi , Thi Huong Ngo , Philippe de Mierry et al.

Crystals, 2023, 13 (5), pp.713. ⟨10.3390/cryst13050713⟩

Article dans une revue hal-04099071v1
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Electrical Behavior of Vertical Pt/Au Schottky Diodes on GaN Homoepitaxy

Maroun Dagher , Camille Sonneville , Georges Bremond , Dominique Planson , Eric Frayssinet et al.

Physica Status Solidi A (applications and materials science), 2023, ⟨10.1002/pssa.202200841⟩

Article dans une revue (article de synthèse) hal-04111725v1
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Threshold Voltage Measurement Protocol “Triple Sense” Applied to GaN HEMTs

Tamiris Grossl Bade , Hassan Hamad , Adrien Lambert , Hervé Morel , Dominique Planson

Electronics, 2023, 12 (11), pp.2529. ⟨10.3390/electronics12112529⟩

Article dans une revue hal-04121028v1
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Design, Fabrication and Characterization of 10 kV 4H-SiC BJT for the Phototransistor Target

Ali Ammar , Mihai Lazar , Bertrand Vergne , Sigo Scharnholz , Luong Viêt Phung et al.

Romanian Journal of Information Science and Technology, 2023, 26 (2), pp.193-204. ⟨10.59277/ROMJIST.2023.2.06⟩

Article dans une revue hal-04276812v1
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Investigation of SiC thyristors with varying amplifying gate design

Sigo Scharnholz , Ralf Hassdorf , Dirk Bauersfeld , Bertrand Vergne , Luong Viêt Phung et al.

Materials Science Forum, 2022, 1062, pp.493-497. ⟨10.4028/p-ztr5d7⟩

Article dans une revue hal-03702384v1
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Deep Level Transient Fourier Spectroscopy (DLTFS) and Isothermal Transient Spectroscopy (ITS) in vertical GaN-on-GaN Schottky barrier diodes

P. Vigneshwara Raja , Christophe Raynaud , Camille Sonneville , Hervé Morel , Luong Viet Phung et al.

Micro and Nanostructures, 2022, 172, pp.207433. ⟨10.1016/j.micrna.2022.207433⟩

Article dans une revue hal-04032160v1
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Capacitance temperature dependence analysis of GaN-on-Si power transistors

Florian Rigaud-Minet , Julien Buckley , William Vandendaele , Matthew Charles , Marie-Anne Jaud et al.

Energies, 2022, 15 (19), pp.7062. ⟨10.3390/en15197062⟩

Article dans une revue cea-03874112v1
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Edge terminations for 4H-SiC power devices: a critical issue

Philippe Godignon , Josep Montserrat , José Rebollo , Dominique Planson

Materials Science Forum, 2022, 1062, pp.570-575. ⟨10.4028/p-lom714⟩

Article dans une revue hal-03694757v1
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Enhanced Resonant Raman Scattering of GaN Functional Layers Using Al Thin Films - A Versatile Tool for Multilayer Structure Analysis

Alina Muravitskaya , Anna Rumyantseva , Atse Julien Eric N’dohi , Camille Sonneville , Dominique Planson et al.

Materials Science Forum, 2022, 1062, pp.293-297. ⟨10.4028/p-5p0qg2⟩

Article dans une revue hal-03702821v1
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Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes

P. Vigneshwara Raja , Christophe Raynaud , Camille Sonneville , Atse Julien Eric N’dohi , Hervé Morel et al.

Microelectronics Journal, 2022, 128, pp.105575. ⟨10.1016/j.mejo.2022.105575⟩

Article dans une revue hal-03826217v1
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4H-SiC PiN diode protected by narrow field rings investigated by the micro-OBIC method

Dominique Planson , Camille Sonneville , Pascal Bevilacqua , Luong Viêt V Phung , Besar Asllani et al.

Materials Science Forum, 2022, 1062, pp.341-345. ⟨10.4028/p-2ch22f⟩

Article dans une revue hal-03689424v1
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Interest of using a micro-meter spatial resolution to study SiC semi-conductor devices by Optical Beam Induced Current (OBIC)

Camille Sonneville , Dominique Planson , Luong Viêt Phung , Pascal Bevilacqua , Besar Asllani

Materials Science Forum, 2020, 1004, pp.290. ⟨10.4028/www.scientific.net/MSF.1004.290⟩

Article dans une revue hal-02925178v1
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Static and switching characteristics of 10 kV-class Silicon Carbide Bipolar Junction Transistors and Darlingtons

Besar Asllani , Pascal Bevilacqua , Hervé Morel , Dominique Planson , Luong Viet Phung et al.

Materials Science Forum, 2020, 1004, pp.923-932. ⟨10.4028/www.scientific.net/MSF.1004.923⟩

Article dans une revue hal-02931290v1
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Multi-barrier height characterization and DLTS study on Ti/W 4H-SiC Schottky Diode

Teng Zhang , Christophe Raynaud , Dominique Planson

Materials Science Forum, 2019, 963, pp.576-579. ⟨10.4028/www.scientific.net/MSF.963.576⟩

Article dans une revue hal-02436812v1
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Subthreshold Drain current hysteresis of planar SiC MOSFETs

Besar Asllani , Alberto Castellazzi , Dominique Planson , Hervé Morel

Materials Science Forum, 2019, 963, pp.184-188. ⟨10.4028/www.scientific.net/MSF.963.184⟩

Article dans une revue hal-02060341v1
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Experimental and simulation results of optical beam induced current technique applied to wide bandgap semiconductors

Dominique Planson , Besar Asllani , Luong-Viet Phung , Pascal Bevilacqua , Hassan Hamad et al.

Materials Science in Semiconductor Processing, 2019, 94, pp.116-127. ⟨10.1016/j.mssp.2019.01.042⟩

Article dans une revue hal-02053053v1
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Advanced Electrical characterisation of high voltage 4H-SiC PiN diodes

Besar Asllani , Dominique Planson , Pascal Bevilacqua , Jean-Baptiste Fonder , Beverley Choucoutou et al.

Materials Science Forum, 2019, 963, pp.567-571. ⟨10.4028/www.scientific.net/MSF.963.567⟩

Article dans une revue hal-02060334v1
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10 kV Silicon Carbide PiN Diodes-From Design to Packaged Component Characterization

Besar Asllani , Hervé Morel , Luong Viêt Phung , Dominique Planson

Energies, 2019, ⟨10.3390/en12234566⟩

Article dans une revue hal-02398585v1
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High-Voltage SiC-JFET Fabrication and Full Characterization

Besar Asllani , Pascal Bevilacqua , Abderrahime Zaoui , Gregory Grosset , Dominique Planson et al.

Materials Science Forum, 2019, 963, pp.688-692. ⟨10.4028/www.scientific.net/MSF.963.688⟩

Article dans une revue hal-02060228v1
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Measure and analysis of 4H-SiC Schottky barrier height with Mo contacts

Teng Zhang , Christophe Raynaud , Dominique Planson

European Physical Journal: Applied Physics, 2019, 85 (1), pp.10102. ⟨10.1051/epjap/2018180282⟩

Article dans une revue hal-02047099v1
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VTH subthreshold hysteresis technology and temperature dependence in commercial 4H-SiC MOSFETs

Besar Asllani , Asad Fayyaz , Alberto Castellazzi , Hervé Morel , Dominique Planson

Microelectronics Reliability, 2018, 88-90, pp.604 - 609. ⟨10.1016/j.microrel.2018.06.047⟩

Article dans une revue hal-01889461v1
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Surge Driven Evolution of Schottky Barrier Height on 4H-SiC JBS Diodes

Besar Asllani , Jean Baptiste Fonder , Pascal Bevilacqua , Dominique Planson , Luong Viet Phung et al.

Materials Science Forum, 2018, 924, pp.593 - 596. ⟨10.4028/www.scientific.net/MSF.924.593⟩

Article dans une revue hal-01857352v1
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Silicon Carbide Technology of MESFET-Based Power Integrated Circuits

Jean-François Mogniotte , Dominique Tournier , Christophe Raynaud , Mihai Lazar , Dominique Planson et al.

IEEE Journal of Emerging and Selected Topics in Power Electronics, 2018, 6 (2), pp.539 - 548. ⟨10.1109/JESTPE.2017.2778002⟩

Article dans une revue hal-01864533v1
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Near Breakdown Voltage Optical Beam Induced Current (OBIC) on 4H-SiC Bipolar Diode

Dominique Planson , Besar Asllani , Hassan Hamad , Marie-Laure Locatelli , R Arvinte et al.

Materials Science Forum, 2018, Silicon Carbide and Related Materials 2017, 924, pp.577-580. ⟨10.4028/www.scientific.net/MSF.924.577⟩

Article dans une revue hal-01818806v1
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Realization and Characterization of Carbonic Layers on 4H-SiC for Electrochemical Detections

Julien Pezard , Véronique Soulière , Mihai Lazar , Naoufel Haddour , François Buret et al.

Materials Science Forum, 2017, 897, pp.739 - 742. ⟨10.4028/www.scientific.net/MSF.897.739⟩

Article dans une revue hal-01644735v1
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SiC integrated circuits for smart power converter

J F Mogniotte , Mihai Lazar , Christophe Raynaud , Dominique Planson , B Allard

Romanian Journal of Information Science and Technology, 2017, 20 (4), pp.385-399

Article dans une revue hal-04277111v1
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OBIC Technique Applied to Wide Bandgap Semiconductors from 100 K up to 450 K

Hassan Hamad , Dominique Planson , Christophe Raynaud , Pascal Bevilacqua

Semiconductor Science and Technology, 2017, 32 (5), ⟨10.1088/1361-6641/aa641d/meta⟩

Article dans une revue hal-01865068v1
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Simulation-Based Study About the Lifetime and Incident Light Properties Dependence of the Optically Triggered 4H-SiC Thyristors Operation

Junichi Hasegawa , Loris Pace , Luong Viet Phung , Mutsuko Hatano , Dominique Planson

IEEE Transactions on Electron Devices, 2017, 64 (3), pp.1203-1208. ⟨10.1109/TED.2017.2657223⟩

Article dans une revue hal-01636430v1
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Very High Sustainable Forward Current Densities on 4H-SiC p-n Junctions Formed by VLS Localized Epitaxy of Heavily Al-Doped p<sup>++</sup> Emitters

Selsabil Sejil , Loïc Lalouat , Mihai Lazar , Davy Carole , Christian Brylinski et al.

Materials Science Forum, 2017, 897, pp.63 - 66. ⟨10.4028/www.scientific.net/MSF.897.63⟩

Article dans une revue hal-01648360v1

Further optimization of VLS localized epitaxy for deeper 4H-SiC p-n junctions

Gabriel Ferro , Selsabil Sejil , Mihai Lazar , D. Carole , C. Brylinski et al.

Physica Status Solidi A (applications and materials science), 2017, 214 (4), ⟨10.1002/pssa.201600454⟩

Article dans une revue hal-01615190v1
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Vertical Termination Filled with Adequate Dielectric for SiC Devices in HVDC Applications

Thi Thanh Huyen Nguyen , Mihai Lazar , Jean-Louis Augé , Hervé Morel , Luong Viet Phung et al.

Materials Science Forum, 2016, 858, pp.982-985. ⟨10.4028/www.scientific.net/MSF.858.982⟩

Article dans une revue hal-01391838v1
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A Study on the Temperature of Ohmic Contact to p-Type SiC Based on Ti 3 SiC 2 Phase

Tony Abi-Tannous , Maher Soueidan , Gabriel Ferro , Mihai Lazar , Christophe Raynaud et al.

IEEE Transactions on Electron Devices, 2016, 63 (6), pp.2462-2468. ⟨10.1109/TED.2016.2556725⟩

Article dans une revue hal-01387992v1
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Optimization of VLS Growth Process for 4H-SiC P/N Junctions

Selsabil Sejil , Mihai Lazar , Frédéric Cayrel , Davy Carole , Christian Brylinski et al.

Materials Science Forum, 2016, 858, pp.205-208. ⟨10.4028/www.scientific.net/MSF.858.205⟩

Article dans une revue hal-01388031v1
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Thermally Stable Ohmic Contact to p-Type 4H-SiC Based on Ti<sub>3</sub>SiC<sub>2</sub> Phase

Tony Abi-Tannous , Maher Soueidan , Gabriel Ferro , Mihai Lazar , Christophe Raynaud et al.

Materials Science Forum, 2016, 858, pp.553-556. ⟨10.4028/www.scientific.net/MSF.858.553⟩

Article dans une revue hal-01388027v1
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Determination of 4H-SiC Ionization Rates Using OBIC Based on Two-Photon Absorption

Hassan Hamad , Christophe Raynaud , Pascal Bevilacqua , Sigo Scharnholz , Bertrand Vergne et al.

Materials Science Forum, 2016, 858, pp.245 - 248. ⟨10.4028/www.scientific.net/MSF.858.245⟩

Article dans une revue hal-01388035v1
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Study and Optimization of a 600V Pseudo-Vertical GaN-on-Silicon Rectifier by Finite Element Simulations

Amira Souguir-Aouani , Nicolas Thierry-Jebali , Dominique Tournier , Arnaud Yvon , Emmanuel Collard et al.

Materials Science Forum, 2016, 858, pp.1190 - 1193. ⟨10.4028/www.scientific.net/MSF.858.1190⟩

Article dans une revue hal-01857348v1
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High termination efficiency using polyimide trench for high voltage diamond Schottky diode

Houssam Arbess , Karine Isoird , Moustafa Zerarka , Henri Schneider , Marie-Laure Locatelli et al.

Diamond and Related Materials, 2015, 58, pp.149-154. ⟨10.1016/j.diamond.2015.07.006⟩

Article dans une revue hal-01218796v1

Parametric investigation of the formation of epitaxial Ti3SiC2 on 4H-SiC from Al-Ti annealing

Tony Abi-Tannous , Maher Soueidan , G. Ferro , Mihai Lazar , B. Toury et al.

Applied Surface Science, 2015, 347, pp.186 - 192. ⟨10.1016/j.apsusc.2015.04.077⟩

Article dans une revue istex hal-01391845v1
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VLS Grown 4H-SiC Buried P+ Layers for JFET Lateral Structures

Selsabil Sejil , Farah Laariedh , Mihai Lazar , Davy Carole , Christian Brylinski et al.

Materials Science Forum, 2015, 821-823, pp.789 - 792. ⟨10.4028/www.scientific.net/MSF.821-823.789⟩

Article dans une revue hal-01387983v1
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Original Field Plate to Decrease the Maximum Electric Field Peak for High-Voltage Diamond Schottky Diode

Houssam Arbess , Karine Isoird , Saleem Hamady , Moustafa Zerarka , Dominique Planson

IEEE Transactions on Electron Devices, 2015, 62 (9), pp. 2945-2951. ⟨10.1109/TED.2015.2456073⟩

Article dans une revue hal-01218835v1
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Short-Circuit Capability Exploration of Silicon Carbide Devices

Maxime Berthou , Dominique Planson , Dominique Tournier

Materials Science Forum, 2015, 821-823, pp.810-813. ⟨10.4028/www.scientific.net/MSF.821-823.810⟩

Article dans une revue hal-02133674v1
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Characterization and Comparison of 1.2kV SiC Power Devices from Cryogenic to High Temperature

Thibaut Chailloux , Cyril Calvez , Dominique Tournier , Dominique Planson

Materials Science Forum, 2015, 821-823, pp.814-817. ⟨10.4028/www.scientific.net/MSF.821-823.814⟩

Article dans une revue hal-02116809v1
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Temperature Dependence of 4H-SiC Ionization Rates Using Optical Beam Induced Current

Hassan Hamad , Christophe Raynaud , Pascal Bevilacqua , Sigo Scharnholz , Dominique Planson

Materials Science Forum, 2015, 821-823, pp.223 - 228. ⟨10.4028/www.scientific.net/MSF.821-823.223⟩

Article dans une revue hal-01387987v1
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2D Electric field imagery in 4H-SiC power diodes using OBIC technique

Hassan Hamad , Pascal Bevilacqua , Dominique Planson , Christophe Raynaud , Dominique Tournier et al.

European Physical Journal: Applied Physics, 2015, Electrical Engineering Symposium (SGE 2014), 72 (2), pp.20101. ⟨10.1051/epjap/2015150054⟩

Article dans une revue istex hal-01387989v1
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P-Type Doping of 4H-SiC for Integrated Bipolar and Unipolar Devices

Mihai Lazar , Selsabil Sejil , L. Lalouat , Christophe Raynaud , D. Carole et al.

Romanian Journal of Information Science and Technology, 2015, 18 (4), pp.329-342

Article dans une revue hal-01626119v1
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The channeling effect of Al and N ion implantation in 4H–SiC during JFET integrated device processing

Mihai Lazar , Farah Laariedh , Pierre Cremillieu , Dominique Planson , Jean-Louis Leclercq

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2015, 365, pp.256 - 259. ⟨10.1016/j.nimb.2015.07.033⟩

Article dans une revue hal-01391844v1
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A Study on the Chemistry of Epitaxial Ti<sub>3</sub>SiC<sub>2</sub> Formation on 4H-SiC Using Al-Ti Annealing

Tony Abi-Tannous , Maher Soueidan , Gabriel Ferro , Mihai Lazar , Berangère Toury et al.

Materials Science Forum, 2015, 821-823, pp.432-435. ⟨10.4028/www.scientific.net/MSF.821-823.432⟩

Article dans une revue hal-01391858v1
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4H-SiC VJFETs with Self-Aligned Contacts

Konstantinos Zekentes , Antonis Stavrinidis , George Konstantinidis , Maria Kayambaki , Konstantin Vamvoukakis et al.

Materials Science Forum, 2015, 821-823, pp.793 - 796. ⟨10.4028/www.scientific.net/MSF.821-823.793⟩

Article dans une revue hal-01391852v1
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Impact of Design on Electrical Characteristics of 3.5 kV 4H-SiC JBS Diode

Pierre Brosselard , Florian Chevalier , Benjamin Proux , Nicolas Thierry-Jebali , Pascal Bevilacqua et al.

Materials Science Forum, 2015, 806, pp.117-120. ⟨10.4028/www.scientific.net/MSF.806.117⟩

Article dans une revue hal-02133670v1

SiC Power Devices Operation from Cryogenic to High Temperature: Investigation of Various 1.2kV SiC Power Devices

Thibaut Chailloux , Cyril Calvez , Nicolas Thierry Thierry-Jebali , Dominique Planson , Dominique Tournier

Materials Science Forum, 2014, 778-780, pp.1122 - 1125. ⟨10.4028/www.scientific.net/MSF.778-780.1122⟩

Article dans une revue hal-01628242v1
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Applications of Vapor-Liquid-Solid Selective Epitaxy of Highly p-type Doped 4H-SiC: PiN Diodes with Peripheral Protection and Improvement of Specific Contact Resistance of Ohmic Contacts

Nicolas Thierry-Jebali , Mihai Lazar , A. Vo-Ha , D. Carole , V. Soulière et al.

Materials Science Forum, 2014, Silicon Carbide and Related Materials 2013, ⟨10.4028/www.scientific.net/MSF.778-780.639⟩

Article dans une revue hal-01987147v1
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Optical beam induced current measurements based on two-photon absorption process in 4H-SiC bipolar diodes

Hassan Hamad , Christophe Raynaud , Pascal Bevilacqua , Dominique Tournier , Bertrand Vergne et al.

Applied Physics Letters, 2014, 104 (8), ⟨10.1063/1.4866581⟩

Article dans une revue hal-01387924v1
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Towards Very High Voltage SiC Power Devices

Dominique Planson , Pierre Brosselard , Dominique Tournier , Luong Viet Phung , Christian Brykinski

ECS Transactions, 2013, 50 (3), pp.425-436. ⟨10.1149/05003.0425ecst⟩

Article dans une revue (article de synthèse) hal-04240149v1

3D TCAD Simulations for More Efficient SiC Power Devices Design

Luong Viet Phung , Dominique Planson , Pierre Brosselard , Dominique Tournier , C. Brylinski

ECS Transactions, 2013, 58 (4), pp.331 - 339. ⟨10.1149/05804.0331ecst⟩

Article dans une revue hal-01636483v1

Edge Termination Design Improvements for 10 kV 4H-SiC Bipolar Diodes

Duy Minh Nguyen , Runhua Huang , Luong Viet Phung , Dominique Planson , Maxime Berthou et al.

Materials Science Forum, 2013, 740-742, pp.609 - 612. ⟨10.4028/www.scientific.net/MSF.740-742.609⟩

Article dans une revue hal-01627801v1

Design and Characterization of a Novel Dual-Gate 3.3 Kv 4H-Sic JFET

Florian Chevalier , Pierre Brosselard , Dominique Tournier , G. Grosset , L. Dupuy et al.

Materials Science Forum, 2013, 740-742, pp.938-941. ⟨10.4028/www.scientific.net/MSF.740-742.938⟩

Article dans une revue hal-00803057v1

Very low specific contact resistance measurements made on a highly p-type doped 4H-SiC layer selectively grown by vapor-liquid-solid transport

N. Thierry-Jebali , A. Vo-Ha , D. Carole , Mihai Lazar , Gabriel Ferro et al.

Applied Physics Letters, 2013, 102 (21), ⟨10.1063/1.4809570⟩

Article dans une revue hal-01627796v1

Study of the Nucleation of p-Doped SiC in Selective Epitaxial Growth Using VLS Transport

Davy Carole , Arthur Vo-Ha , Anthony Thomas , Mihai Lazar , Nicolas Thierry-Jebali et al.

Materials Science Forum, 2013, 740-742, pp.177-180. ⟨10.4028/www.scientific.net/MSF.740-742.177⟩

Article dans une revue hal-00803058v1

p-Doped SiC Growth on Diamond Substrate by VLS Transport

Arthur Vo Ha , Davy Carole , Mihai Lazar , Dominique Tournier , François Cauwet et al.

Materials Science Forum, 2013, 740-742, pp.331 - 334. ⟨10.4028/www.scientific.net/MSF.740-742.331⟩

Article dans une revue hal-01627777v1

Electrical Characterization of PiN Diodes with p<sup>+</sup> Layer Selectively Grown by VLS Transport

Nicolas Thierry-Jebali , Mihai Lazar , Arthur Vo Ha , Davy Carole , Véronique Soulière et al.

Materials Science Forum, 2013, 740-742, pp.911 - 914. ⟨10.4028/www.scientific.net/MSF.740-742.911⟩

Article dans une revue hal-01627792v1
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Die attach using silver sintering. Practical implementation and analysis

Amandine Masson , Wissam Sabbah , Raphaël Riva , Cyril Buttay , Stephane Azzopardi et al.

European Journal of Electrical Engineering, 2013, 16 (3-4), pp.293-305. ⟨10.3166/ejee.16.293-305⟩

Article dans une revue hal-00874465v1

Pulse Current Characterization of SiC GTO Thyristors with Etched JTE

Sigo Scharnholz , Ralf Hassdorf , Gontran Pâques , Bertrand Vergne , Dominique Planson

Materials Science Forum, 2013, 740-742, pp.986 - 989. ⟨10.4028/www.scientific.net/MSF.740-742.986⟩

Article dans une revue hal-01627784v1

Understanding the growth of p-doped 4H-SiC layers using vapour–liquid–solid transport

A. Vo-Ha , D. Carole , Mihai Lazar , Dominique Tournier , F. Cauwet et al.

Thin Solid Films, 2013, 548, pp.125 - 129. ⟨10.1016/j.tsf.2013.09.030⟩

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4H-SiC P<sup>+</sup>N UV Photodiodes : A Comparison between Beam and Plasma Doping Processes

Stéphane Biondo , Laurent Ottaviani , Mihai Lazar , Dominique Planson , Julian Duchaine et al.

Materials Science Forum, 2012, 717-720, pp.1203-1206. ⟨10.4028/www.scientific.net/MSF.717-720.1203⟩

Article dans une revue hal-02275699v1

OBIC measurements on avalanche diodes in 4H-SiC for the determination of impact ionization coefficients

Duy Minh Nguyen , Christophe Raynaud , Mihai Lazar , Gontran Pâques , Sigo Scharnholz et al.

Materials Science Forum, 2012, 717-720, pp.545-548. ⟨10.4028/www.scientific.net/MSF.717-720.545⟩

Article dans une revue hal-00803059v1

Electrical Characteristics of SiC UV-Photodetector Device from the P-I-N Structure Behaviour to the Junction Barrier Schottky Structure Behaviour

Stéphane Biondo , Mihai Lazar , Laurent Ottaviani , Wilfried Vervisch , Olivier Palais et al.

Materials Science Forum, 2012, 711, pp.114-117. ⟨10.4028/www.scientific.net/MSF.711.114⟩

Article dans une revue hal-04050522v1

Investigations on Ni-Ti-Al Ohmic Contacts Obtained on P-Type 4H-SiC

Farah Laariedh , Mihai Lazar , Pierre Cremillieu , Jean -Louis Leclercq , Dominique Planson

Materials Science Forum, 2012, 711, pp.169-173. ⟨10.4028/www.scientific.net/MSF.711.169⟩

Article dans une revue hal-04050541v1
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600 V PiN diodes fabricated using on-axis 4H silicon carbide

Gabriel Civrac , Farah Laariedh , Nicolas Thierry-Jebali , Mihai Lazar , Dominique Planson et al.

Materials Science Forum, 2012

Article dans une revue hal-02126341v1
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Pressureless Silver Sintering Die-Attach for SiC Power Devices

Stanislas Hascoët , Cyril Buttay , Dominique Planson , Rodica Chiriac , Amandine Masson

Materials Science Forum, 2012, 740 - 742, pp.851-854. ⟨10.4028/www.scientific.net/MSF.740-742.851⟩

Article dans une revue hal-00799893v1
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Pulse Characterization of Optically Triggered SiC Thyristors

Nicolas Dheilly , Gontran Pâques , Sigo Scharnholz , Dominique Planson

Materials Science Forum, 2012, 717-720, pp.1179-1182. ⟨10.4028/www.scientific.net/MSF.717-720.1179⟩

Article dans une revue hal-02166420v1
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SIMS Analyses Applied to Open an Optical Window in 4H-SiC Devices for Electro-Optical Measurements

Mihai Lazar , François Jomard , Duy Minh M Nguyen , Christophe Raynaud , Gontran Pâques et al.

Materials Science Forum, 2012, 717-720, pp.885-888. ⟨10.4028/www.scientific.net/MSF.717-720.885⟩

Article dans une revue hal-02166414v1

4H-silicon carbide thin junction based ultraviolet photodetectors

Stéphane Biondo , Mihai Lazar , Laurent Ottaviani , Wilfried Vervisch , Vincent Le Borgne et al.

Thin Solid Films, 2012, in press. ⟨10.1016/j.tsf.2011.12.079⟩

Article dans une revue istex hal-00747356v1

Light triggered 4H-SiC thyristors with an etched guard ring assisted JTE

Nicolas Dheilly , Dominique Planson , Gontran Pâques , Sigo Scharnholz

Solid-State Electronics, 2012, 73, pp.32-36. ⟨10.1016/j.sse.2012.02.007⟩

Article dans une revue istex hal-00747348v1

Parallel and serial association of SiC light triggered thyristors

Nicolas Dheilly , Gontran Pâques , Sigo Scharnholz , Dominique Planson

Materials Science Forum, 2012, 711, pp.129-133. ⟨10.4028/www.scientific.net/MSF.711.129⟩

Article dans une revue hal-00661512v1
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Comparison of SiC Thyristors with Differently Etched JTEs

Gontran Pâques , Sigo Scharnholz , Nicolas Dheilly , Dominique Planson , Rik W. de Doncker

Materials Science Forum, 2012, 717-720, pp.1167 - 1170. ⟨10.4028/www.scientific.net/MSF.717-720.1167⟩

Article dans une revue hal-01627763v1

High-Voltage 4H-SiC Thyristors With a Graded Etched Junction Termination Extension

Gontran Pâques , Sigo Scharnholz , Nicolas Dheilly , Dominique Planson , Rik W. de Doncker

IEEE Electron Device Letters, 2011, 32 (10), pp.1421 - 1423. ⟨10.1109/LED.2011.2163055⟩

Article dans une revue hal-00661495v1

Optical triggering of 4H-SiC thyristors with a 365 nm UV LED

Nicolas Dheilly , Gontran Pâques , Dominique Planson , Pascal Bevilacqua , Sigo Scharnholz

Materials Science Forum, 2011, 679-680, pp.690-693. ⟨10.4028/www.scientific.net/MSF.679-680.690⟩

Article dans une revue hal-00661458v1

Investigation of Epitaxial SiC PiN Diodes with Variable Mesa Height

Gontran Pâques , Sigo Scharnholz , Jens-Peter Konrath , Nicolas Dheilly , Dominique Planson et al.

Materials Science Forum, 2011, 679-680, pp.473-476. ⟨10.4028/www.scientific.net/MSF.679-680.473⟩

Article dans une revue hal-00661475v1

Characterization and VHDL-AMS modeling of SiC-JFET transistor

Rami Mousa , Dominique Planson , Hervé Morel

European Journal of Electrical Engineering, 2011, 14 (1), pp.7-27. ⟨10.3166/EJEE.14.7-27⟩

Article dans une revue istex hal-00747438v1

Study of 4H-SiC JBS Diodes Fabricated with Tungsten Schottky Barrier

Maxime Berthou , Philippe Godignon , Josep Montserrat , José Millán , Dominique Planson

Journal of Electronic Materials, 2011, 40 (12), pp.2355 - 2362. ⟨10.1007/s11664-011-1774-y⟩

Article dans une revue istex hal-01627572v1
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Influence of the Masking Material and Geometry on the 4H-SiC RIE Etched Surface State

Mihai Lazar , Fabrice Enoch , Farah Laariedh , Dominique Planson , Pierre Brosselard

Materials Science Forum, 2011, 679-680, pp.477-480. ⟨10.4028/www.scientific.net/MSF.679-680.477⟩

Article dans une revue hal-04343373v1

Experimental determination of impact ionization coefficients in 4H-SiC

Duy Minh Nguyen , Christophe Raynaud , Nicolas Dheilly , Mihai Lazar , Dominique Tournier et al.

Diamond and Related Materials, 2011, 20 (3), pp.395-397. ⟨10.1016/j.diamond.2011.01.039⟩

Article dans une revue istex hal-00661429v1
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Avalanche Diodes with Low Temperature Dependence in 4H-SiC Suitable for Parallel Protection

Duy Minh Nguyen , Gontran Pâques , Nicolas Dheilly , Christophe Raynaud , Dominique Tournier et al.

Materials Science Forum, 2011, 679-680, pp.567-570. ⟨10.4028/www.scientific.net/MSF.679-680.567⟩

Article dans une revue hal-02168909v1

Graded Etched Junction Termination for SiC Thyristors

Gontran Pâques , Nicolas Dheilly , Dominique Planson , Rik W. de Doncker , Sigo Scharnholz

Materials Science Forum, 2011, 679-680, pp.457-460. ⟨10.4028/www.scientific.net/MSF.679-680.457⟩

Article dans une revue hal-00661479v1

Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications

Dominique Tournier , Pierre Brosselard , Christophe Raynaud , Mihai Lazar , Hervé Morel et al.

Advanced Materials Research, 2011, Advances in Innovative Materials and Applications, pp.46-51. ⟨10.4028/www.scientific.net/AMR.324.46⟩

Article dans une revue hal-00799902v1

Perspectives on SiC and III-N Based Devices for Power Electronics

Christian Brylinski , Dominique Planson

ECS Transactions, 2011, 41 (8), pp.139-152. ⟨10.1149/1.3631492⟩

Article dans une revue hal-04240508v1
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Simulation and design of junction termination structures for diamond Schottky diodes

Fabien Thion , Karine Isoird , Dominique Planson , Marie-Laure Locatelli , Hui Ding

Diamond and Related Materials, 2011, 20 (5-6), pp.729-732. ⟨10.1016/j.diamond.2011.03.011⟩

Article dans une revue hal-00661491v1
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Diode Schottky sur diamant CVD. Simulation, réalisation technologique et étude de protection périphérique

Sojan Koné , Hui Ding , Fabien Thion , Henri Schneider , Karine Isoird et al.

European Journal of Electrical Engineering, 2011, 14 (5), pp.553 - 567. ⟨10.3166/ejee.14.553-567⟩

Article dans une revue hal-01627761v1

Optical triggering of SiC thyristors using UV LEDs

Nicolas Dheilly , Gontran Pâques , Sigo Scharnholz , Pascal Bevilacqua , Christophe Raynaud et al.

Electronics Letters, 2011, 47 (7), pp.459 - 460. ⟨10.1049/el.2010.7041⟩

Article dans une revue hal-00661435v1

State of the art of high temperature power electronics

Cyril Buttay , Dominique Planson , Bruno Allard , Dominique Bergogne , Pascal Bevilacqua et al.

Materials Science and Engineering: B, 2011, 176 (4), pp.283-288. ⟨10.1016/j.mseb.2010.10.003⟩

Article dans une revue istex hal-00597432v1
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Extreme dielectric strength in boron doped homoepitaxial diamond

Pierre-Nicolas Volpe , Pierre Muret , Julien Pernot , Franck Omnès , Tokuyuki Teraji et al.

Applied Physics Letters, 2010, 97 (22), pp.223501. ⟨10.1063/1.3520140⟩

Article dans une revue hal-00734714v1

High breakdown voltage Schottky diodes synthesized on p-type CVD diamond layer

Pierre-Nicolas Volpe , Pierre Muret , Julien Pernot , Franck Omnès , Tokuyuki Teraji et al.

Physica Status Solidi A (applications and materials science), 2010, 207 (9), pp.2088-2092. ⟨10.1002/pssa.201000055⟩

Article dans une revue istex hal-00739492v1
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A Step Toward High Temperature Intelligent Power Modules Using 1.5kV SiC-BJT

Dominique Tournier , Pascal Bevilacqua , Pierre Brosselard , Dominique Planson

Materials Science Forum, 2010, 645-648, pp.1155-1158. ⟨10.4028/WWW.scientific.net/MSF.645-648.1155⟩

Article dans une revue hal-02168907v1
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Comparison of High Voltage and High Temperature Performances of Wide Bandgap Semiconductors for vertical Power Devices

Christophe Raynaud , Dominique Tournier , Hervé Morel , Dominique Planson

Diamond and Related Materials, 2010, 19, pp.1-6. ⟨10.1016/j.diamond.2009.09.015⟩

Article dans une revue hal-02186368v1
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Polyimide Passivation Effect on High Voltage 4H-SiC PiN Diode Breakdown Voltage

Sombel Diaham , Marie-Laure Locatelli , Thierry Lebey , Christophe Raynaud , Mihai Lazar et al.

Materials Science Forum, 2009, MATERIALS SCIENCE FORUM, 615-617, pp.695-698. ⟨10.4028/www.scientific.net/MSF.615-617.695⟩

Article dans une revue hal-04368204v1

High Power Density SiC 450A AccuMOSFET for Current Limiting Applications

Dominique Tournier , Pascal Bevilacqua , Dominique Planson , Hervé Morel , Pierre Brosselard et al.

Materials Science Forum, 2009, MATERIALS SCIENCE FORUM, 615-617, pp.911-914. ⟨10.4028/www.scientific.net/MSF.615-617.911⟩

Article dans une revue hal-04368124v1
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Temperature Dependence lifetime measurements on 3.3kV 4H-SiC PiN Diodes using OCVD Technique

Nicolas Dheilly , Dominique Planson , Pierre Brosselard , Jawad Ul Hassan , Pascal Bevilacqua et al.

Materials Science Forum, 2009, MATERIALS SCIENCE FORUM, 615-617, pp.703-706. ⟨10.4028/www.scientific.net/MSF.615-617.703⟩

Article dans une revue hal-04368136v1

Characterization of 4H-SiC Junction Barrier Schottky Diodes by Admittance vs Temperature Analyses

Christophe Raynaud , Duy Minh Nguyen , Pierre Brosselard , Amador Pérez-Tomás , Dominique Planson et al.

Materials Science Forum, 2009, 615-617, pp.671-674. ⟨10.4028/www.scientific.net/MSF.615-617.671⟩

Article dans une revue hal-00391462v1

Analysis of the dynamic avalanche of punch through insulated gate bipolar transistor (PT-IGBT)

Pierre Lefranc , Dominique Planson , Hervé Morel , Dominique Bergogne

Solid-State Electronics, 2009, 53 (9), pp.944-954. ⟨10.1016/j.sse.2009.06.009⟩

Article dans une revue istex hal-00476201v1
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Process Optimization for High Temperature SiC Lateral Devices

Maher Soueidan , Mihai Lazar , Duy Minh Nguyen , Dominique Tournier , Christophe Raynaud et al.

Materials Science Forum, 2009, MATERIALS SCIENCE FORUM, 615-617, pp.585-588. ⟨10.4028/www.scientific.net/MSF.615-617.585⟩

Article dans une revue hal-04368215v1

Optical beam induced current measurements: principles and applications to SiC device characterization

Christophe Raynaud , Duy Minh Nguyen , Nicolas Dheilly , Dominique Tournier , Pierre Brosselard et al.

Physica Status Solidi A (applications and materials science), 2009, 206 (10), pp.2273-2283. ⟨10.1002/pssa.200825183⟩

Article dans une revue istex hal-00398971v1
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Impact of RIE Etching on the Breakdown Voltage of 4H-SiC Mesa Diode

Heu Vang , Sigo Scharnholz , Christophe Raynaud , Mihai Lazar , Gontran Pâques et al.

Materials Science Forum, 2008, MATERIALS SCIENCE FORUM, 600-603, pp.1011-1014. ⟨10.4028/www.scientific.net/MSF.600-603.1011⟩

Article dans une revue hal-04368150v1

Comparison of Electrical Properties of Ohmic Contact Realized on p-type 4H-SiC

Duy Minh Nguyen , Christophe Raynaud , Mihai Lazar , Heu Vang , Dominique Planson

Materials Science Forum, 2008, Materials Science Forum, 600-603, pp.639-642. ⟨10.4028/www.scientific.net/MSF.600-603.639⟩

Article dans une revue hal-00391560v1

Determination of ambipolar lifetime and epilayer thickness of 5 kV SiC bipolar devices by switching transient studies

Tarek Ben Salah , Damien Risaletto , Christophe Raynaud , Kamel Besbes , Dominique Bergogne et al.

Materials Science Forum, 2008, Materials Science Forum, Volumes 600-603, pp.1031-1034. ⟨10.4028/www.scientific.net/MSF.600-603.1031⟩

Article dans une revue hal-04452237v1
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1.2 kV pin diodes with SiCrystal epiwafer

Heu Vang , Christophe Raynaud , Pierre Brosselard , Mihai Lazar , Pierre Cremillieu et al.

Materials Science Forum, 2007, MATERIALS SCIENCE FORUM, 556-557, pp.901-904. ⟨10.4028/www.scientific.net/MSF.556-557.901⟩

Article dans une revue hal-04369138v1
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Use of Graphite Cap to Reduce Unwanted Post-Implantation Annealing Effects in SiC

Erwan Oliviero , Mihai Lazar , Heu Vang , Christiane Dubois , Pierre Cremillieu et al.

Materials Science Forum, 2007, MATERIALS SCIENCE FORUM, 556-557, pp.611-614. ⟨10.4028/www.scientific.net/MSF.556-557.611⟩

Article dans une revue hal-04369331v1
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OBIC Analysis of Different Edge Terminations of Planar 1.6 kV 4H-SiC Diodes

Christophe Raynaud , Daniel Loup , Phillippe Godignon , Raul Perez Rodriguez , Dominique Tournier et al.

Materials Science Forum, 2007, MATERIALS SCIENCE FORUM, 556-557, pp.1007-1010. ⟨10.4028/www.scientific.net/MSF.556-557.1007⟩

Article dans une revue hal-04369314v1
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Deep SiC etching with RIE

Mihai Lazar , Heu Vang , Pierre Brosselard , Christophe Raynaud , Pierre Cremilleu et al.

Superlattices and Microstructures, 2006, 40 (4-6), pp.388-392. ⟨10.1016/j.spmi.2006.06.015⟩

Article dans une revue hal-00179458v1
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Composants de puissance en SiC. Etat de l'art

Dominique Planson , Christophe Raynaud , Pierre Brosselard , Dominique Bergogne , Mihai Lazar et al.

European Journal of Electrical Engineering, 2006, 9 (4-5), pp.595-611

Article dans une revue hal-04371563v1
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Ni-Al ohmic contact to p-type 4H-SiC

Heu Vang , Mihai Lazar , Pierre Brosselard , Christophe Raynaud , Pierre Cremilleu et al.

Superlattices and Microstructures, 2006, 40 (4-6), pp.626-631

Article dans une revue hal-00141426v1
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Current sensing for SiC Power Devices

D. Tournier , Miquel Vellvehi , Philippe Godignon , Josep Montserrat , Dominique Planson et al.

Materials Science Forum, 2006, MATERIALS SCIENCE FORUM, 527-529, pp.1215-1218. ⟨10.4028/www.scientific.net/MSF.527-529.1215⟩

Article dans une revue hal-04369348v1
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P-type SiC layers formed by VLS induced selective epitaxial growth

Mihai Lazar , Christophe Jacquier , Christiane Dubois , Christophe Raynaud , Gabriel Ferro et al.

Materials Science Forum, 2005, 483-485, pp.633-636. ⟨10.4028/www.scientific.net/MSF.483-485.633⟩

Article dans une revue hal-04362494v1
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A 3.5 kV Thyristor in 4H-SiC with a JTE Periphery

Pierre Brosselard , Thierry Bouchet , Dominique Planson , Sigo Scharnholz , Gontran Pâques et al.

Materials Science Forum, 2005, 483-485, pp.1005-1008. ⟨10.4028/www.scientific.net/MSF.483-485.1005⟩

Article dans une revue hal-04345858v1
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Composants à semi-conducteur de puissance pour des applications à haute température de fonctionnement

Bruno Allard , Gérard Coquery , Laurent Dupont , Zoubir Khatir , Mihai Lazar et al.

Journal sur l'enseignement des sciences et technologies de l'information et des systèmes, 2005, 4 (HS), pp. 18-19. ⟨10.1051/bib-j3ea:2005610⟩

Article dans une revue hal-01702019v1
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Towards the Fabrication and Measurement of High Sensitivity SiC-UV Detectors with Oxide Ramp Termination

Gheorghe Brezeanu , Phillippe Godignon , E. Dimitrova , Christophe Raynaud , Dominique Planson et al.

Materials Science Forum, 2004, 457-460, pp.1495-1498. ⟨10.4028/www.scientific.net/MSF.457-460.1495⟩

Article dans une revue hal-04093364v1
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On-Chip Temperature Monitoring of a SiC Current Limiter

Dominique Tournier , Phillippe Godignon , José Millan , Dominique Planson , Jean-Pierre Chante et al.

Materials Science Forum, 2004, 457-460, pp.1021-1024. ⟨10.4028/www.scientific.net/MSF.457-460.1021⟩

Article dans une revue hal-02966528v1

OBIC analysis for 1.3 kV 6H-SiC p(+)n planar bipolar diodes protected by Junction Termination Extension

Christophe Raynaud , S. Wang , Dominique Planson , Mihai Lazar , Jean-Pierre Chante

Diamond and Related Materials, 2004, 13 (9), pp.1697-1703

Article dans une revue hal-00140107v1
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Influence of Different Peripheral Protections on the Breakover Voltage of a 4H-SiC GTO Thyristor

Pierre Brosselard , Volker Zorngiebel , Dominique Planson , Sigo Scharnholz , Jean-Pierre Chante et al.

Materials Science Forum, 2004, 457-460, pp.1129-1132. ⟨10.4028/www.scientific.net/MSF.457-460.1129⟩

Article dans une revue hal-04092535v1
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The Role of the Ion Implanted Emitter State on 6H-SiC Power Diodes Behavior. A Statistical Study

Mihai Lazar , G.C. Cardinali , Christophe Raynaud , Antonella Poggi , Dominique Planson et al.

Materials Science Forum, 2004, 457-460, pp.1025-1028. ⟨10.4028/www.scientific.net/MSF.457-460.1025⟩

Article dans une revue hal-04345830v1
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A 4H-SiC high-power-density VJFET as controlled current limiter

Dominique Tournier , Philippe Godignon , Josep Montserrat , Dominique Planson , Christophe Raynaud et al.

IEEE Transactions on Industry Applications, 2003, 39 (5), pp.1508-1513

Article dans une revue hal-00140109v1
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Fabrication and Characterisation of High Voltage SiC-Thyristors

Volker Zorngiebel , Sigo Scharnholz , Emil Spahn , Pierre Brosselard , N. Arssi et al.

Materials Science Forum, 2003, 433-436, pp.883-886. ⟨10.4028/www.scientific.net/MSF.433-436.883⟩

Article dans une revue hal-02489305v1
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Characterization of a 4H-SiC High Power Density Controlled Current Limiter

Dominique Tournier , Phillippe Godignon , Josep Montserrat , Dominique Planson , Christophe Raynaud et al.

Materials Science Forum, 2003, 433-436, pp.871-874. ⟨10.4028/www.scientific.net/MSF.433-436.871⟩

Article dans une revue hal-02458100v1

Effect of ion implantation parameters on Al dopant redistribution in SiC after annealing: Defect recovery and electrical properties of p-type layers

Mihai Lazar , Christophe Raynaud , Dominique Planson , Jean-Pierre Chante , Marie-Laure Locatelli et al.

Journal of Applied Physics, 2003, 94 (5), pp.2992-2998

Article dans une revue hal-00140110v1
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SiC Power Devices on QUASIC and SiCOI Smart-Cut<sup>®</sup> Substrates: First Demonstrations

Fabrice Letertre , N. Daval , Francois Templier , Edwige Bano , Dominique Planson et al.

Materials Science Forum, 2003, 433-436, pp.813-818. ⟨10.4028/www.scientific.net/MSF.433-436.813⟩

Article dans une revue hal-04091219v1
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OBIC Measurements of 1.3kV 6H-SiC Bipolar Diodes Protected by Junction Termination Extension

S.R. Wang , Christophe Raynaud , Dominique Planson , Mihai Lazar , Jean-Pierre Chante

Materials Science Forum, 2003, 433-436, pp.863-866. ⟨10.4028/www.scientific.net/MSF.433-436.863⟩

Article dans une revue hal-04091213v1

Optimal layout for 6H-SiC VJFET controlled current limiting device

Dominique Tournier , Xavier Jordà , Philippe Godignon , Dominique Planson , Jean-Pierre Chante et al.

Diamond and Related Materials, 2003, 12 (3-7), pp.1220-1223

Article dans une revue hal-00140113v1
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Study of 4H-SiC High-Voltage Bipolar Diodes under Reverse Bias Using Electrical and OBIC Characterization

K. Isoird , Mihai Lazar , Marie-Laure Locatelli , Christophe Raynaud , Dominique Planson et al.

Materials Science Forum, 2002, 389-393, pp.1289-1292. ⟨10.4028/www.scientific.net/MSF.389-393.1289⟩

Article dans une revue hal-02151720v1
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Simulation Study of a Novel Current-Limiting Device: A Vertical α-SiC JFET - Controlled Current Limiter

Dominique Tournier , Phillippe Godignon , Josep Montserrat , Dominique Planson , Jean-Pierre P Chante et al.

Materials Science Forum, 2002, 389-393, pp.1243-1246. ⟨10.4028/www.scientific.net/MSF.389-393.1243⟩

Article dans une revue hal-02151713v1

Characteristics of aluminum-implanted 6H-SiC samples after different thermal treatments

Laurent Ottaviani , Mihai Lazar , Marie-Laure Locatelli , Dominique Planson , Jean-Pierre Chante et al.

Materials Science and Engineering: B, 2002, 90 (3), pp.301-308. ⟨10.1016/S0921-5107(02)00002-8⟩

Article dans une revue istex hal-00140116v1
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Compatibility of VJFET Technology with MESFET Fabrication and Its Interest for System Integration: Fabrication of 6H and 4H-SiC 110 V Lateral MESFET

Dominique Tournier , Phillippe Godignon , Josep Montserrat , Dominique Planson , Jean-Pierre P Chante et al.

Materials Science Forum, 2002, 389-393, pp.1403-1406. ⟨10.4028/www.scientific.net/MSF.389-393.1403⟩

Article dans une revue hal-02151712v1
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A Comparative Study of High-Temperature Aluminum Post-Implantation Annealing in 6H- and 4H-SiC, Non-Uniform Temperature Effects

Mihai Lazar , Christophe Raynaud , Dominique Planson , Marie-Laure Locatelli , K. Isoird et al.

Materials Science Forum, 2002, 389-393, pp.827-830. ⟨10.4028/www.scientific.net/MSF.389-393.827⟩

Article dans une revue hal-02151714v1
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Realization of a High-Current and Low R<sub>ON</sub> 600V Current-Limiting Device

F. Nallet , Phillippe Godignon , Dominique Planson , Christophe Raynaud , Jean-Pierre P Chante

Materials Science Forum, 2002, 389-393, pp.1247-1250. ⟨10.4028/www.scientific.net/MSF.389-393.1247⟩

Article dans une revue hal-02151717v1
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High Electrical Activation of Aluminium and Nitrogen Implanted in 6H-SiC at Room Temperature by RF Annealing

Mihai Lazar , Laurent Ottaviani , Marie-Laure Locatelli , Christophe Raynaud , Dominique Planson et al.

Materials Science Forum, 2001, 353-356, pp.571-574. ⟨10.4028/www.scientific.net/MSF.353-356.571⟩

Article dans une revue hal-02151710v1
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Study of 6H-SiC high voltage bipolar diodes under reverse biases

Karine Isoird , Mihai Lazar , Laurent Ottaviani , Marie-Laure Locatelli , Christophe Raynaud et al.

Applied Surface Science, 2001, 184 (1-4), pp.477-482. ⟨10.1016/S0169-4332(01)00537-2⟩

Article dans une revue istex hal-00140118v1

Experimental characterization of a 4H-SiC high voltage current limiting device

F. Nallet , Dominique Planson , Philippe Godignon , Marie-Laure Locatelli , Mihai Lazar et al.

Applied Surface Science, 2001, 184 (1-4), pp.404-407

Article dans une revue hal-00140117v1
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Study of the Breakdown Voltage of Protected or Non-Protected 6H-SiC Bipolar Diodes by OBIC Characterisation

Karine Isoird , Laurent Ottaviani , Marie-Laure Locatelli , Dominique Planson , Christophe Raynaud et al.

Materials Science Forum, 2000, 338-342, pp.1363-1366. ⟨10.4028/www.scientific.net/MSF.338-342.1363⟩

Article dans une revue hal-02281030v1
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Improved Annealing Process for 6H-SiC p<sup>+</sup>-n Junction Creation by Al Implantation

Mihai Lazar , Laurent Ottaviani , Marie-Laure Locatelli , Dominique Planson , Bruno Canut et al.

Materials Science Forum, 2000, 338-342, pp.921-924. ⟨10.4028/www.scientific.net/MSF.338-342.921⟩

Article dans une revue hal-02275720v1

Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy

N. S. Savkina , A. A. Lebedev , D. V. Davydov , A. M. Strel'Chuk , A. S. Tregubova et al.

Materials Science and Engineering: B, 2000, 77 (1), pp.50-54

Article dans une revue hal-00140585v1

Electrical characterisation of MNOS devices on p-type 6H-SiC

S. Berberich , Philippe Godignon , José del R. Millán , Dominique Planson , H. Hartnagel et al.

Diamond and Related Materials, 1999, 8 (2-5), pp.305-308

Article dans une revue hal-00141547v1

Design of a 600 V silicon carbide vertical power MOSFET

Dominique Planson , Marie-Laure Locatelli , F. Lanois , Jean-Pierre Chante

Materials Science and Engineering: B, 1999, 61 (2), pp.497-501

Article dans une revue hal-00141536v1

Aluminum multiple implantations in 6H–SiC at 300 K

Laurent Ottaviani , Erwan Morvan , Marie-Laure Locatelli , Dominique Planson , Philippe Godignon et al.

Solid-State Electronics, 1999, 43 (12), pp.2215-2223. ⟨10.1016/S0038-1101(99)00199-9⟩

Article dans une revue istex hal-03727987v1

P-N Junction creation in 6H-SiC by aluminum implantation

Laurent Ottaviani , Marie-Laure Locatelli , Dominique Planson , Karine Isoird , Jean-Pierre Chante et al.

Materials Science and Engineering: B, 1999, 61 (2), pp.424-428

Article dans une revue hal-00141527v1
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Post-Implantation Annealing of Aluminium in 6H-SiC

Laurent Ottaviani , Dominique Planson , Marie-Laure Locatelli , Jean-Pierre Chante , B. Canut et al.

Materials Science Forum, 1998, 264-268, pp.709-712. ⟨10.4028/www.scientific.net/MSF.264-268.709⟩

Article dans une revue hal-02281029v1

Metal-Nitride-Semiconductor Capacitors on 6H-SiC

Stefan Berberich , Phillippe Godignon , José Millan , Dominique Planson , H.L. Hartnagel et al.

Materials Science Forum, 1998, 264-268, pp.881-884. ⟨10.4028/www.scientific.net/MSF.264-268.881⟩

Article dans une revue hal-03728071v1
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Comparison between Aluminium and Boron-Doped Junction Termination Extensions for high Voltage 6H-SiC Planar Bipolar Diodes

S. Ortolland , Marie-Laure Locatelli , Dominique Planson , Jean-Pierre Chante , A. Senes

Materials Science Forum, 1998, 264-268, pp.1045-1048. ⟨10.4028/www.scientific.net/MSF.264-268.1045⟩

Article dans une revue hal-04691862v1
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Les composants de puissance : état de l'art, les évolutions

Jean-Pierre Chante , Bruno Allard , Dominique Bergogne , Francis Calmon , René Elhinger et al.

Revue Internationale de Génie Electrique, RIGE, 1998

Article dans une revue hal-02117240v1

Periphery protection for silicon carbide devices: State of the art and simulation

Dominique Planson , Marie-Laure Locatelli , S. Ortolland , Jean-Pierre Chante , H. Mitlehner et al.

Materials Science and Engineering: B, 1997, 46 (1-3), pp.210-217

Article dans une revue hal-00141603v1

Damage annealing and dopant activation in Al ion implanted alpha-SiC

B. Canut , S. Ramos , J. Roger , Jean-Pierre Chante , Marie-Laure Locatelli et al.

Materials Science and Engineering: B, 1997, 46 (1-3), pp.267-270. ⟨10.1016/S0921-5107(96)01986-1⟩

Article dans une revue istex hal-00141605v1

Deep centers and negative temperature coefficient of the breakdown voltage of SiC p-n structures

A. A. Lebedev , S. Ortolland , Christophe Raynaud , Marie-Laure Locatelli , Dominique Planson et al.

Semiconductors, 1997, 31 (7), pp.735-737

Article dans une revue hal-00141601v1

Angle etch control for silicon carbide power devices

F. Lanois , P. Lassagne , Dominique Planson , Marie-Laure Locatelli

Applied Physics Letters, 1996, 69 (2), pp.236-238

Article dans une revue hal-00141623v1
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The negative temperature coefficient of the breakdown voltage of SiC p-n structures and deep centers in SiC

A A Lebedev , A M Strel'Chuk , S. Ortolland , C Raynaud , Marie-Laure Locatelli et al.

Institute of Physics Conference Series, 1996

Article dans une revue hal-02423361v1
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Stress and doping analysis of low n-doped GaN layers grown on GaN, silicon and sapphire substrates by micro-Raman 2. Physics and characterization

Ndembi Ignoumba-Ignoumba , Camille Sonneville , Adrien Bidaud , Mohammed El Amrani , Thibaud Guillemin et al.

ICNS-15 - the 15th International Conference on Nitride Semiconductors, Jul 2025, Malmö, Sweden

Communication dans un congrès hal-05097968v1
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Raman and photoluminescence characterization of β-Ga2O3 for power electronic application

Enora Vuillermet , Camille Sonneville , Changzi Lu , Pierre Brosselard , Jean-Marie Bluet et al.

WORKSHOP ON GALLIUM OXIDE AND RELATED MATERIALS, Sep 2025, Grenoble, France

Communication dans un congrès hal-05317962v1
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An improved TCAD simulation procedure for platinum diffused silicon power diodes

Calvin Stephen , Sophie Ngo , Jean-Charles Greca , Luong-Viêt Phung , Christophe Raynaud et al.

International Symposium on Power Semiconductor Devices and ICs (ISPSD), Jun 2025, Kumamoto, Japan

Communication dans un congrès hal-05098406v1

Probing Fermi Energy and Temperature-Dependent Shifts in Doped Homo-Epitaxial GaN Layers Using Micro-Raman Spectroscopy

Aomar Ezza , Denis Machon , Ali Soltani , Camille Sonneville , Andreas Ruediger et al.

ICNS-15 - the 15th International Conference on Nitride Semiconductors, Jul 2025, Malmö, Sweden

Communication dans un congrès hal-05348023v1
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Mesures µ-OBIC sur diode bipolaire Diamant : une première !

Dominique Planson , Camille Sonneville , Gabrielle Moulin , Karine Isoird , Florent Sevely et al.

Symposium de Génie Electrique (SGE 2025), Jul 2025, Toulouse, France

Communication dans un congrès hal-05146836v1
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Analysis of Robustness of 650 V GaN HEMT under Repetitive Short-Circuits

Adrien Lambert , Hervé Morel , Pascal Bevilacqua , D. Tournier , Laurent Guillot et al.

ESREF 2025 : 36th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 2025, Université de Bordeaux, ADERA, Oct 2025, Bordeaux, France

Communication dans un congrès hal-05323083v1
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Physical and electrical characterization of wide band gap for power electronic application

Camille Sonneville , Enora Vuillermet , Ndembi Ignoumba-Ignoumba , Maroun Dagher , Nhan Tran et al.

Société Française de Physique, Jun 2025, Troyes, France

Communication dans un congrès hal-05097944v1
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Electrical characterization of HV (10 kV) Power 4H-SiC Bipolar Junction Transistor

Pierre Brosselard , Brenda Fosso-Sob , Dominique Planson , Pascal Bevilacqua , Camille Sonneville et al.

International Conference on Silicon Carbide and Related Materials (ICSCRM 2024), Sep 2024, Raleigh (North Carolina), United States. pp.126-128

Communication dans un congrès hal-04677764v1
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Peripheral defects related to processing technique in GaN-on-GaN vertical devices

M Dagher , G Brémond , Camille Sonneville , Dominique Planson , H Haas et al.

Workshop on Nitride Semiconductors IWN 2024, Nov 2024, O'ahu (Honolulu), United States

Communication dans un congrès hal-04855750v1
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Repetitive Short-circuits on 650 V GaN

Adrien Lambert , Hervé Morel , Dominique Planson , Luong Viêt Phung , Dominique Tournier et al.

PCIM Europe 2024, Jun 2024, Nuremberg, Germany

Communication dans un congrès hal-04626451v1
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Carrier density analysis in stressed n-doped GaN layers on sapphire

Ndembi Ignoumba-Ignoumba , Camille Sonneville , Éric Frayssinet , Adrien Bidaud , Florian Bartoli et al.

GaN Marathon, Jun 2024, Vérone, Italy

Communication dans un congrès hal-04639487v1
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Impact of Substrate Quality on Vertical GaN-on-GaN Schottky and PiN Devices

M Dagher , Camille Sonneville , Dominique Planson , V Maurya , J Buckley et al.

e-MRS Fall Meeting, Sep 2024, Varsovie (Warsaw), Poland

Communication dans un congrès hal-04855745v1
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Matching physical and electrical measurements (OBIC) to simulation (FEM) on high voltage bipolar diodes

Dominique Planson , Camille Sonneville , Pascal Bevilacqua , Pierre Brosselard , Mihai Lazar et al.

International Conference on Silicon Carbide and Related Materials (ICSCRM 2024), Sep 2024, Raleigh (North Carolina), United States. pp.591-592

Communication dans un congrès hal-04680725v1
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Design and Characterization of an Optical 4H-SiC Bipolar Junction Transistor

Pierre Brosselard , Dominique Planson , D. Tournier , Pascal Bevilacqua , Camille Sonneville et al.

ICSCRM 2023 - International Conference on Silicon Carbide and Related Materials, Sep 2023, Sorrente, Italy

Communication dans un congrès hal-04222211v1
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First Results on 1.2 kV SiC MOSFET Body Diode Robustness Tests

Hassan Hamad , Dominique Tournier , Jean-Michel Reynes , Olivier Perrotin , Régis Meuret et al.

34th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Oct 2023, Toulouse, France

Communication dans un congrès hal-04240602v1
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Impact of Wide Band-Gap Semiconductors on the Design in Power Electronics

Hervé Morel , Maroun Alam , Pascal Bevilacqua , D. Tournier , Dominique Planson

Symposium on Advanced Technologies in Electrical Systems (SATES 2023), Mar 2023, Arras, France

Communication dans un congrès hal-04224402v1

Vertical pin diodes on large freestanding (100) diamond film

M.A. Pinault-Thaury , Mohamed Bouras , Rémi Gillet , Ingrid Stenger , François Jomard et al.

2023 EUROPEAN MATERIALS RESEARCH SOCIETY Spring Meeting, EUROPEAN MATERIALS RESEARCH SOCIETY, May 2023, Strasbourg, France

Communication dans un congrès hal-04219862v1
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Application of the Double Source Switching Test to GaN HEMTs

Tamiris Grossl Bade , Maroun Alam , Hervé Morel , Dominique Planson

25th Conference on Power Electronics and Applications (and Exhibition), EPE ’23 (IEEE) ECCE Europe (Energy Conversion Congress and Expo Europe), Sep 2023, Aalborg, Denmark. ⟨10.23919/EPE23ECCEEurope58414.2023.10264519⟩

Communication dans un congrès hal-04225311v1
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Visualization of P$^+$ JTE embedded rings used for peripheral protection of high voltage Schottky diodes by the Optical Beam Induced Current (OBIC) technique

Dominique Planson , D. Tournier , Pascal Bevilacqua , Camille Sonneville , Pierre Brosselard et al.

ICSCRM 2023 - International Conference on Silicon Carbide and Related Materials, Sep 2023, Sorrente, Italy

Communication dans un congrès hal-04218429v1
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Emerging trends in OBIC characterization technique for Wide Bandgap semiconductor devices

Dominique Planson , Camille Sonneville , Pascal Bevilacqua , Dominique Tournier

International Semiconductor Conference (CAS-2023), IMT Bucharest, Oct 2023, Sinaia, Romania. pp.3-10, ⟨10.1109/CAS59036.2023.10303647⟩

Communication dans un congrès hal-04238355v1
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Full-SiC Single-Chip High-Side and Low-Side Dual-MOSFET for Ultimate Power Vertical Integration -Basic Concept and Technology

Ralph Makhoul , Nour Beydoun , Abdelhakim Bourennane , Luong Viet Phung , M. Lazar et al.

25th Conference on Power Electronics and Applications (and Exhibition), EPE ’23 (IEEE) ECCE Europe (Energy Conversion Congress and Expo Europe), Sep 2023, Aalborg, Denmark. ⟨10.23919/EPE23ECCEEurope58414.2023.10264325⟩

Communication dans un congrès hal-04203163v1
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Full-SiC Single-Chip Buck and Boost MOSFET-JBS Converters for Ultimate Efficient Power Vertical Integration

Ralph Makhoul , Abdelhakim Bourennane , Luong Viêt Phung , Frédéric Richardeau , Mihai Lazar et al.

IEEE 30th International Conference Mixed Design of Integrated Circuits and Systems, Institute of Computer Science of AGH University of Science and Technology, Jun 2023, Kraków, Poland. https://www.mixdes.org/Mixdes3/, ⟨10.23919/MIXDES58562.2023.10203213⟩

Communication dans un congrès hal-04147862v1
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Micro-Raman characterization of vertical GaN Schottky and PN diodes

Camille Sonneville , Vishwajeet Maurya , Maroun Dagher , Adam Mohamed Kaywah , Eric Frayssinet et al.

46th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe and 17th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (WOCSDICE-EXMATEC 2023), May 2023, Palerme, Italy

Communication dans un congrès hal-04170420v1
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Caractérisation dynamique de thyristors SiC avec gâchette amplificatrice

Sigo Scharnholz , Kamil Kotra , Ralf Hassdorf , Luong Viêt Phung , Dominique Planson

5ème Symposium de Génie Electrique (SGE 2023), Jul 2023, Lille, France

Communication dans un congrès hal-04401362v1
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Courts-circuits répétitifs non-destructifs sur des transistors HEMT-GaN 650 V

Adrien Lambert , Hervé Morel , D. Tournier , Dominique Planson , Luong Viêt Phung et al.

5ème Symposium de Génie Electrique (SGE 2023), Jul 2023, Lille, France

Communication dans un congrès hal-04150168v1
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Concept and technology for full monolithic MOSFET and JBS vertical integration in multi-terminal 4H-SiC power converters

Ralph Makhoul , Nour Beydoun , Abdelhakim Bourennane , Luong Viêt Phung , Frédéric Richardeau et al.

ICSCRM 2023 - International Conference on Silicon Carbide and Related Materials, Sep 2023, Sorrente, Italy

Communication dans un congrès hal-04221605v1

Electrically Active Traps in Bipolar 10 kV 8 A Silicon Carbide (SiC) PiN Diodes

P Vigneshwara Raja , Christophe Raynaud , Besar Asllani , Herve Morel , Dominique Planson

International Symposium On Semiconductor Materials and Devices ISSMD 2022, Dec 2022, Bhubaneswar, India

Communication dans un congrès hal-03990840v1

Dynamic characterization of SiC thyristors with amplifying gate design

K Kotra , S Scharnholz , R Hassdorf , L V Phung , Dominique Planson

E-MRS 2022 Fall Meeting, Sep 2022, Varsovie, Poland

Communication dans un congrès hal-04011099v1

Trapping effects in High-Power 4H-Silicon Carbide (4H-SiC) Bipolar PiN Rectifiers

P Vigneshwara Raja , Besar Asllani , Christophe Raynaud , Hervé Morel , Luong Viet Phung et al.

6th IEEE International Conference on Emerging Electronics (ICEE 2022), IEEE, Dec 2022, Bangalore, India

Communication dans un congrès hal-04011039v1
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Multiphysics Characterizations of Vertical GaN Schottky Diodes

Atse Julien Eric N’dohi , Camille Sonneville , Soufiane Saidi , Thi Huong Ngo , P. de Mierry et al.

2022 Compound Semiconductor Week (CSW), Jun 2022, Ann Arbor, United States. pp.1-2, ⟨10.1109/CSW55288.2022.9930447⟩

Communication dans un congrès hal-03844585v1
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Design of a test package for high voltage SiC diodes

Arthur Boutry , Bruno Lefebvre , Cyril Buttay , Eric Vagnon , Dominique Planson et al.

Proceedings of the International Workshop on Integrated Power Packaging (IWIPP 2022), Aug 2022, Grenoble, France. ⟨10.1109/IWIPP50752.2022.9894223⟩

Communication dans un congrès hal-03772006v1
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Caractérisation par spectroscopie micro-Raman de diodes GaN Schottky

Camille Sonneville , Atse Julien Eric N’dohi , S Saidi , T H Ngo , P. de Mierry et al.

Conférence Internationale Matériaux, Oct 2022, Lille, France

Communication dans un congrès hal-03844887v1
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Monitoring Dynamic Resistance of AlGaN/GaN Schottky Diodes After Quasi-Static and Hard Switching Stresses

Maroun Alam , Hervé Morel , Luong Viêt Phung , Dominique Planson , A. Yvon

2022 International Semiconductor Conference (CAS 2022), Oct 2022, Poiana Brasov, Romania. pp.195-198, ⟨10.1109/CAS56377.2022.9934143⟩

Communication dans un congrès hal-03887865v1
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Optimized Junction Termination Extension and Ring System for 11 kV 4H-SiC BJT

Ali Ammar , Mihai Lazar , Bertrand Vergne , Sigo Scharnholz , Luong Viêt Phung et al.

2022 International Semiconductor Conference (CAS 2022), Oct 2022, Poiana Brasov, Romania. pp.191-194, ⟨10.1109/CAS56377.2022.9934390⟩

Communication dans un congrès hal-03856578v1
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Vertical current temperature analysis of GaN-on-Si epitaxy through analytical modelling

Florian Rigaud-Minet , Julien Buckley , William Vandendaele , Stéphane Becu , Matthew Charles et al.

SSDM 2022 - 2022 International conference on solid state devices and materials, Sep 2022, Chiba, Japan

Communication dans un congrès cea-03875079v1
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Electrical behavior of vertical Schottky diodes on GaN homoepitaxy

M Dagher , Camille Sonneville , Georges Bremond , Dominique Planson , Yvon Cordier et al.

IWN 2022 - International Workshop on Nitride Semiconductors, Oct 2022, Berlin, Germany

Communication dans un congrès hal-03854620v1
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Toward an Innovative Monolithic Integration of Vertical and Lateral GaN Devices

Zahraa Zaidan , Nedal Al Taradeh , Christophe Rodriguez , Abdelatif Jaouad , Ali Soltani et al.

Conférence Euro-méditerranéenne Matériaux, Composants et Systèmes EMCM-DS, Oct 2022, Fes, Morocco

Communication dans un congrès hal-03946187v1

MULTIPHYSICS CHARACTERIZATIONS OF VERTICAL GaN SCHOTTKY DIODES

Atse Julien Eric N’dohi , Camille Sonneville , Soufiane Saidi , Thi Huong Ngo , P. de Mierry et al.

POWER 2021 (IMAPS), Nov 2021, Tours, France

Communication dans un congrès hal-03676940v1

High voltage (6kV) diamond TMBS diode design

Ralph Makhoul , Karine Isoird , Luong Viet Phung , Dominique Planson

31st International Conference On Diamond and Carbon Materials, Sep 2021, Palma, Mallorca, Spain

Communication dans un congrès hal-03715580v1
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Switching Behavior and Comparison of Wide Bandgap Devices for Automotive Applications

Joao Oliveira , Ali Alhoussen , Florent Loiselay , Hervé Morel , Dominique Planson

EPE'21 ECCE Europe, Sep 2021, Ghent, Belgium. ⟨10.23919/EPE21ECCEEurope50061.2021.9570434⟩

Communication dans un congrès hal-03260519v1
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Edge terminations for 4H-SiC power devices: a critical issue

P Godignon , J Montserrat , J Rebollo , Dominique Planson

ECSCRM 2020-2021, Oct 2021, Tours, France

Communication dans un congrès hal-03418183v1

Homo epitaxial n-doped GaN layers investigation using Raman Spectroscopy for Vertical device applications

Atse Julien Eric N’dohi , Camille Sonneville , Thi Huong Ngo , P. de Mierry , Éric Frayssinet et al.

EXMATEC / WOCSDICE 2021 : 15th Expert Evaluation and Control of Compounds of Semiconductor Materials and Technologies, Jun 2021, Bristol, United Kingdom

Communication dans un congrès hal-03676503v1
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4H-SiC PiN diode protected by narrow field rings investigated by the micro-OBIC method

Dominique Planson , C Sonneville , Pascal Bevilacqua , L V Phung , B Asllani et al.

ECSCRM 2020-2021, Oct 2021, Tours, France

Communication dans un congrès hal-03410274v1
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Conception de diodes TMBS haute tension (6kV) en diamant

Ralph Makhoul , Karine Isoird , Luong Viet Phung , Dominique Planson

SYMPOSIUM DE GENIE ELECTRIQUE (SGE 2020), Jul 2021, Nantes, France

Communication dans un congrès hal-03355128v1
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Investigation of SiC thyristors with varying amplifying gate design

S Scharnholz , R Hassdorf , D Bauersfeld , B Vergne , Luong Viêt Phung et al.

European Conference on Silicon Carbide and Related Materials (ECSCRM2020) 2021, Oct 2021, Tours, France

Communication dans un congrès hal-03410752v1
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Enhanced Resonant Raman scattering of GaN functional layers using Al thin films -a versatile tool for multilayer structure analysis

Alina Muravitskaya , Anna Rumyantseva , Atse Julien Eric N’dohi , Camille Sonneville , Dominique Planson et al.

ECSCRM2020-2021, Oct 2021, Tours, France

Communication dans un congrès hal-03410757v1
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Analysis of Parasitic Elements in Power Modules Based on GaN Components

Joao Oliveira , Hervé Morel , Dominique Planson , Florent Loiselay

PCIM Europe 2020, Jul 2020, Nuremberg, Germany

Communication dans un congrès hal-02945892v1
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Demonstration of the Short-circuit Ruggedness of a 10 kV Silicon Carbide Bipolar Junction Transistor

Besar Asllani , Hervé Morel , Pascal Bevilacqua , Dominique Planson

EPE’20 ECCE Europe, Sep 2020, Lyon, France. ⟨10.23919/EPE20ECCEEurope43536.2020.9215769⟩

Communication dans un congrès hal-02945919v1
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Switching Loss Estimation Using a Validated Model of 650 V GaN HEMTs

Joao Oliveira , Florent Loiselay , Hervé Morel , Dominique Planson

EPE’20 ECCE Europe, Sep 2020, Lyon, France. ⟨10.23919/EPE20ECCEEurope43536.2020.9215793⟩

Communication dans un congrès hal-02945913v1
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V TH -Hysteresis and Interface States Characterisation in SiC Power MOSFETs with Planar and Trench Gate

Besar Asllani , Alberto Castellazzi , Oriol Aviño Salvado , Asad Fayyaz , Hervé Morel et al.

IRPS, Mar 2019, Monterey, CA, United States. ⟨10.1109/IRPS.2019.8720612⟩

Communication dans un congrès hal-02099781v1
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Interest of using a micro-meter spatial resolution to study SiC semi-conductor devices by Optical Beam Induced Current (OBIC)

Camille Sonneville , Dominique Planson , Luong Viêt Phung , Pascal Bevilacqua , Besar Asllani

International Conference on Silicon Carbide and Related Materials (ICSCRM) 2019, Sep 2019, Kyoto, Japan. pp.Mo-P-23

Communication dans un congrès hal-02428502v1
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Effects of the laser beam size on the Optical Beam Induced Current (OBIC) for the study of Wide Band Gap (WBG) Semi-Conductor Devices

Camille Sonneville , Dominique Planson , Luong Viêt Phung , Besar Asllani , Pascal Bevilacqua

Workshop on Compound Semiconductor Devices and Integrated Circuits 2019 (WOCSDICE 2019), Jun 2019, Cabourg, France

Communication dans un congrès hal-02164000v1
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SiC power MOSFETs Threshold-voltage hysteresis and its impact on Short Circuit operation

Besar Asllani , Hervé Morel , Dominique Planson , Asad Fayyaz , Alberto Castellazzi

ESARS-ITEC, IEEE, Nov 2018, Nottingham, United Kingdom. ⟨10.1109/ESARS-ITEC.2018.8607547⟩

Communication dans un congrès hal-01984359v1
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Static characteristics of 5 kV SiC BJTs and Darlington’s

Besar Asllani , Dominique Planson , Hervé Morel , T Lagier

International Conference on Silicon Carbide and Related Materials (ICSCRM) 2019, Sep 2019, Kyoto, Japan

Communication dans un congrès hal-02428513v1
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Experimental and simulation results of OBIC Technique Applied to Wide Bandgap Semiconductors

Dominique Planson , Luong-Viet Phung , Besar Asllani , Pascal Bevilacqua , Hassan Hamad et al.

e-MRS Fall Meeting, Sep 2018, Varsovie, Poland

Communication dans un congrès hal-02116919v1

Towards SiC thyristors with amplifying gate design

Ralf Hassdorf , Sigo Scharnholz , Dirk Bauersfeld , Bertrand Vergne , Luong Viêt Phung et al.

Symposium de Génie Electrique (SGE'18), Université de Lorraine [UL], Jul 2018, Nancy, France

Communication dans un congrès hal-02983373v1
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Subthreshold Drain current hysteresis of planar SiC MOSFETs

Besar Asllani , A Castellazzi , Dominique Planson , Hervé Morel

ECSCRM'18, Sep 2018, Birmingham, United Kingdom. pp.TU.O4a.04

Communication dans un congrès hal-02428531v1
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Multi-barrier height characterization and DLTS study on Ti/W 4H-SiC Schottky Diode

Teng Zhang , Christophe Raynaud , Dominique Planson

ECSCRM'18, Sep 2018, Birmingham, United Kingdom

Communication dans un congrès hal-02004837v1
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Advanced Electrical characterisation of high voltage 4H-SiC PiN diodes

Besar Asllani , Dominique Planson , Pascal Bevilacqua , J B Fonder , B Choucoutou et al.

ECSCRM'18, Sep 2018, Birmingham, United Kingdom. pp.WE.P.RD2

Communication dans un congrès hal-01985994v1
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Conception and high temperature characterization of 10 kV 50 A 4H-SiC PiN diodes

B Choucoutou , Besar Asllani , L V Phung , J B Fonder , Dominnique Tournier et al.

European Conference on Silicon Carbide and Related Materials, Sep 2018, Birmingham, United Kingdom

Communication dans un congrès hal-02004841v1
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Mesure et analyse de la hauteur de barrière des contacts Schottky Mo sur SiC-4H

Teng Zhang , Christophe Raynaud , Dominique Planson

Symposium de Génie Electrique (SGE'18), Université de Lorraine [UL], Jul 2018, Nancy, France

Communication dans un congrès hal-02983328v1
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SiC lateral Schottky diode technology for integrated smart power converter

Jean-François Mogniotte , Christophe Raynaud , Mihai Lazar , Bruno Allard , Dominique Planson

2018 IEEE ICIT, Feb 2018, Lyon, France. ⟨10.1109/ICIT.2018.8352287⟩

Communication dans un congrès hal-01864545v1
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High-Voltage SiC-JFET Fabrication and Full Characterization

Besar Asllani , Pascal Bevilacqua , A. Zaoui , G Grosset , Dominique Planson et al.

ECSCRM'18, Sep 2018, Birmingham, United Kingdom. pp.TU.P_BP5

Communication dans un congrès hal-02428523v1
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Emergence of SiC Thyristors Featuring Amplifying Gate Design

Ralf Hassdorf , Sigo Scharnholz , Dirk Bauersfeld , Bertrand Vergne , Luong Viêt Phung et al.

International Conference on Silicon Carbide and Related Materials, Sep 2017, Washington DC, United States

Communication dans un congrès hal-02004843v1
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Near breakdown voltage optical beam induced current (OBIC) on 4H-SiC bipolar diode

Dominique Planson , Besar Asllani , Hassan Hamad , Marie-Laure Locatelli , Lumei Wei et al.

International Conference on Silicon Carbide and Related Materials 2017 (ICSCRM 2017), Sep 2017, Washington, United States. pp.TH.DP.4

Communication dans un congrès hal-02138767v1
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Technology Route towards SiC Thyristor Devices with Amplifying Gate Design

S Scharnholz , R Hassdorf , D Bauersfeld , B Vergne , L V Phung et al.

Compound Semiconductor Week 2017, May 2017, Berlin, Germany

Communication dans un congrès hal-03103484v1
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Surge driven evolution of Schottky barrier height on 4H-SiC JBS diodes

Besar Asllani , J B Fonder , Pascal Bevilacqua , Dominique Planson , L. Phung et al.

International Conference on Silicon Carbide and Related Materials 2017 (ICSCRM 2017), Sep 2017, Washington DC, United States

Communication dans un congrès hal-02132576v1
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Very High Sustainable Forward Current Densities on 4H-SiC P+N- Junctions formed by localized VLS P+ epitaxy

Selsabil Sejil , Loïc Lalouat , Mihai Lazar , Davy Carole , Christian Brylinski et al.

ECSCRM'16, Sep 2016, Halkidiki, Greece

Communication dans un congrès hal-02138729v1

OBIC Technique Applied to Wide Bandgap Semiconductors

Dominique Planson , Hassan Hamad

40th WOCSDICE ‐ Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe & 13th EXMATEC ‐ Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, Jun 2016, Aveiro, Portugal

Communication dans un congrès hal-01388036v1
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Realization and characterization of carbonic layers on 4H-SiC for electrochemical detections

Julien Pezard , V. Souliere , Mihai Lazar , Naoufel Haddour , François Buret et al.

ECSCRM'16, Sep 2016, Halkidiki, Greece. pp.WeP-52

Communication dans un congrès hal-02138738v1
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Étude en simulation et conception d'un transistor bipolaire (BJT) 10 kV en 4H-SiC

Beverley Choucoutou , Luong Viet Phung , Pierre Brosselard , Michel Mermet-Guyennet , Dominique Planson

Symposium de Génie Electrique (SGE'16), Jun 2016, Grenoble, France

Communication dans un congrès hal-01361668v1
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Simulation-based Study on the Optical Beam Intensity Dependence of the Optically Triggered 4H-SiC Thyristors Turn-on Operation

Junichi Hasegawa , Loris Pace , Luong Viêt Phung , Mutsuko Hatano , Dominique Planson

International Conference on Solid State Devices and Materials 2016, Sep 2016, Tsukuba International Congress Center Tsukuba, Japan. ⟨10.7567/SSDM.2016.PS-14-17L⟩

Communication dans un congrès hal-04088082v1
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Precise Automated Semiconductor Characterization under Ambient Control for testing wide band gap semiconductors

Bertrand Vergne , Sigo Scharnholz , Dominique Planson , Dominique Tournier , Pierre Brosselard

International Symposium on High Voltage Engineering (ISH) 2015, Aug 2015, Pilsen, Czech Republic

Communication dans un congrès hal-02428642v1
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Lifetime of holes determination in 4H-SiC using two-photon optical beam induced current method

Hassan Hamad , Christophe Raynaud , Pascal Bevilacqua , Dominique Planson

CAS, Oct 2015, Sinaia, Romania. ⟨10.1109/SMICND.2015.7355226⟩

Communication dans un congrès hal-01388024v1

Vertical termination filled with adequate dielectric for SiC devices in HVDC applications

T. Nguyen-Bui , Mihai Lazar , Jean-Louis Augé , Hervé Morel , L. Phung et al.

International Conference on Silicon Carbide and Related Materials 2015 (ICSCRM 2015), Oct 2015, Giardini Naxos, Italy

Communication dans un congrès hal-02138529v1
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Study and optimization of a 600V Pseudo-vertical GaN-on-silicon rectifier by finite elements simulation

A Souguir-Aouani , N. Thierry-Jebali , Dominique Tournier , A Yvon , E Collard et al.

ICSCRM 2015, Oct 2015, Giardini Naxos, Italy. pp.Mo-P-44

Communication dans un congrès hal-02138522v1
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Temperature Dependence of 4H-SiC Ionization Rates Using Optical Beam Induced Current

Hassan Hamad , Christophe Raynaud , Pascal Bevilacqua , Sigo Scharnholz , Dominique Planson

ECSCRM'14, Sep 2014, Grenoble, France. pp.MO2-IP-08

Communication dans un congrès hal-02133683v1
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Thermally stable ohmic contact to p-type 4H-SiC based on Ti3SiC2 phase

Tony Abi-Tannous , Maher Soueidan , G. Ferro , Mihai Lazar , Christophe Raynaud et al.

ICSCRM, Oct 2015, Giardini Naxos, Italy

Communication dans un congrès hal-02138520v1
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4H-SiC P-N junctions realized by VLS for JFET lateral structures

Selsabil Sejil , Farah Laariedh , Mihai Lazar , Davy Carole , Christian Brylinski et al.

ECSCRM'14, Sep 2014, Grenoble, France. pp.TU-P-61

Communication dans un congrès hal-02133686v1
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4H-SiC VJFETs with Self-Aligned Contacts

Konstantinos Zekentes , Antonis Stavrinidis , George Konstantinidis , Maria Kayambaki , Konstantinos Vamvoukakis et al.

ECSCRM'14, Sep 2014, Grenoble, France. pp.WE-P-75

Communication dans un congrès hal-02133681v1
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Determination of 4H-SiC ionization rates using OBIC based on two-photon absorption

Hassan Hamad , Christophe Raynaud , Pascal Bevilacqua , S Sharnholz , Bertrand Vergne et al.

International Conference on Silicon Carbide and Related Materials 2015 (ICSCRM 2015), Oct 2015, Giardini Naxos, Italy

Communication dans un congrès hal-02138523v1
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Localized VLS Epitaxy Process as a P-type Doping Alternative Technique for 4H-SiC P/N Junctions

Selsabil Sejil , Mihai Lazar , Davy Carole , Christian Brylinski , Dominique Planson et al.

Semiconductor Interface Specialists Conference (SISC 2015), Dec 2015, Arlington, United States

Communication dans un congrès hal-02428659v1
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Classic and alternative methods of p-type doping 4H-SiC for integrated lateral devices

Mihai Lazar , Davy Carole , Christophe Raynaud , Gabriel Ferro , Selsabil Sejil et al.

CAS, Oct 2015, Sinaia, Romania. pp.145 - 148, ⟨10.1109/SMICND.2015.7355190⟩

Communication dans un congrès hal-01388019v1
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Conception de thyristors SiC permettant l'étude de l'amplification interne de l'allumage

Sigo Scharnholz , Luong Viêt Phung , Dominique Tournier , Bertrand Vergne , Ralf Hassdorf et al.

Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France

Communication dans un congrès hal-01065352v1
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Imagerie 2D du champ électrique dans les diodes SiC-4H haute tension par la technique OBIC

Hassan Hamad , Pascal Bevilacqua , Dominique Planson , Christophe Raynaud , Dominique Tournier et al.

Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France

Communication dans un congrès hal-01065307v1
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On the chemistry of epitaxial Ti3SiC2 formation on 4H-SiC using Al-Ti annealing

Tony Abi Tannous , Maher Soueidan , Gabriel Ferro , Mihai Lazar , Bérangère Toury et al.

ECSCRM'14, Sep 2014, Grenoble, France. pp.TU-P-63

Communication dans un congrès hal-02428741v1
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Optimisation de la terminaison d'une diode Schottky diamant haute tension

Houssam Arbess , Karine Isoird , Dominique Planson , Luong Viet Phung

Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France

Communication dans un congrès hal-01065274v1
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Etude de différents transistors de puissance SiC 1.2kV des températures cryogéniques aux hautes températures

Thibaut Chailloux , Cyril Calvez , Dominique Tournier , Dominique Planson

Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France

Communication dans un congrès hal-01065281v1
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Les réseaux HVDC multi-terminaux : des défis multiples en génie électrique

Marc Petit , Seddik Bacha , Xavier Guillaud , Hervé Morel , Dominique Planson et al.

1er Symposium de Génie Électrique (SGE 2014), Jul 2014, Cachan, France

Communication dans un congrès hal-01065154v1
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Characterization and comparison of 1.2 kV SiC power devices from cryogenic to high temperature

Thibaut Chailloux , Cyril Calvez , Dominique Tournier , Dominique Planson

ECSCRM'14, Sep 2014, Grenoble, France

Communication dans un congrès hal-02132486v1
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Wide bandgap semiconductors for ultra high voltage devices. Design and characterization aspects

Dominique Planson , Pierre Brosselard , Karine Isoird , Mihai Lazar , Luong Viêt Phung et al.

CAS, Oct 2014, Sinaia, Romania. pp.35 - 40, ⟨10.1109/SMICND.2014.6966383⟩

Communication dans un congrès hal-01388002v1

Two-dimensional Optical Beam Induced Current measurements in 4H-SiC bipolar diodes

Hassan Hamad , Pascal Bevilacqua , Christophe Raynaud , Dominique Planson

2014 IEEE PRIME, Jun 2014, Grenoble, France. ⟨10.1109/PRIME.2014.6872761⟩

Communication dans un congrès hal-01388043v1
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Nouveaux contacts électriques sur SiC-4H de type p : réalisation de phases MAX

Tony Abi Tannous , Maher Soueidan , Gabriel Ferro , Berangere Toury-Pierre , Mihai Lazar et al.

Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France

Communication dans un congrès hal-01065327v1
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Influence of process parameters on electrical properties of PiN diodes fabricated with a highly p-type doped layer selectively grown by VLS transport

N Thierry-Jebali , Mihai Lazar , A Vo-Ha , D Carole , V Soulière et al.

International Conference on Silicon Carbide and Related Materials ICSCRM 2013, Sep 2013, Miyazaki, Japan

Communication dans un congrès hal-04011693v1
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Study of the Nucleation of p-doped SiC in Selective Epitaxial Growth using VLS Transport

Davy Carole , Arthur Vo-Ha , Anthony Thomas , Mihai Lazar , Nicolas Thierry Thierry-Jebali et al.

ECSCRM 2012, Sep 2012, Saint-Pétersbourg, Russia. 4p

Communication dans un congrès hal-04362529v1
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Pulse Current Characterization of SiC GTO Thyristors with Etched JTE

Sigo Scharnholz , Ralf Hassdorf , Gontran Pâques , Bertrand Vergne , Dominique Planson

European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), Sep 2012, Saint-Petersbourg, Russia. pp.986-989, ⟨10.4028/www.scientific.net/MSF.740-742.986⟩

Communication dans un congrès hal-04423357v1

p-type SiC growth on diamond substrate by VLS Transport

Arthur Vo-Ha , Davy Carole , Mihai Lazar , D. Tournier , François Cauwet et al.

ECSCRM 2012, Sep 2012, Saint-Pétersbourg, Russia. 2p

Communication dans un congrès hal-04423301v1
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SiC power devices operation from cryogenic to high temperature: investigation of various 1.2kV SiC power devices

T Chailloux , C Calvez , N Thierry-Jebaly , D. Tournier , Dominique Planson

International Conference on Silicon Carbide and Related Materials (ICSCRM) 2013, Sep 2013, Miyazaki, Japan. pp.1122-1125, ⟨10.4028/www.scientific.net/MSF.778-780.1122⟩

Communication dans un congrès hal-04169013v1
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Experimental Investigation of Electro-thermal Stress Impact on SiC-BJTs Electrical Characteristics

Thibault Chailloux , Cyril Calvez , Pascal Bevilacqua , Dominique Planson , Dominique Tournier

HiTEN'13, Jul 2013, Oxford, United Kingdom

Communication dans un congrès hal-03326669v1
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Impact of design on electrical characteristics of 3.5 kV 4H-SiC JBS diode

Pierre Brosselard , F Chevalier , B Proux , N Thierry-Jebali , Pascal Bevilacqua et al.

International Silicon Carbide Hetero-Epitaxy HeteroSiC and Workshop on Advanced Semiconductor Materials and devices for Power Electronics WASMPE, Jun 2013, Nice, France

Communication dans un congrès hal-04022951v1
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High temperature, Smart Power Module for aircraft actuators

Khalil El Falahi , Stanislas Hascoët , Cyril Buttay , Pascal Bevilacqua , Luong Viet Phung et al.

HiTEN'13, Jul 2013, Oxford, United Kingdom

Communication dans un congrès hal-00874666v1

3D TCAD Simulations for More Efficient SiC Power Devices Design

Luong Viêt Phung , Dominique Planson , Pierre Brosselard , Dominique Tournier , Christian Brylinski

Electro Chemical Society 224th meeting, Oct 2013, San Francisco, United States. ⟨10.1149/05804.0331ecst⟩

Communication dans un congrès hal-04240572v1

Electrical characteristics of SiC UV-Photodetector device : from the p-i-n structure behaviour to the Junction Barrier Schottky structure behaviour

Stéphane Biondo , Mihai Lazar , Laurent Ottaviani , Wilfried Vervisch , Olivier Palais et al.

HeteroSiC & WASMPE 2011, Jun 2011, Tours, France. pp.114-117, ⟨10.4028/www.scientific.net/MSF.711.114⟩

Communication dans un congrès hal-00661511v1
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Pressureless Silver Sintering Die-Attach for SiC Power Devices

Stanislas Hascoët , Cyril Buttay , Dominique Planson , Rodica Chiriac , Amandine Masson

CSCRM, Sep 2012, Saint-Pétersbourg, Russia. 2p

Communication dans un congrès hal-00759987v2
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Electrical characterization of PiN diodes fabricated on a p layer selectively grown by VLS transport

Nicolas Thierry-Jebali , Mihai Lazar , Arthur Vo-Ha , Davy Carole , Véronique Soulière et al.

Proceedings of the 2012 European Conference on Silicon Carbide and Related Materials ECSCRM, Sep 2012, Saint-Pétersbourg, Russia. 4p

Communication dans un congrès hal-04366810v1

Electrical characteristics (I-V) of field plate protected vertical diamond Schottky diodes

F. Thion , K. Isoird , Dominique Planson , Marie-Laure Locatelli , Henri Schneider et al.

International Conference on Diamond and Carbon Materials Granada, SPAIN, 2012, Granada, Spain

Communication dans un congrès hal-03966084v1
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Design of an integrated power converter in Wide Band Gap for harsh environments

Jean-François Mogniotte , Dominique Tournier , Pascal Bevilacqua , Philippe Godignon , Dominique Planson

Conference on Integrated Power Electronics systems, Mar 2012, Nuremberg, Germany

Communication dans un congrès hal-02124203v1
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Thyristors GTO haute tension en carbure de silicium avec terminaison JTE gravée

Sigo Scharnholz , Gontran Pâques , Bertrand Vergne , Claudia Maurer , Dominique Planson et al.

Electronique de Puissance du Futur 2012, Jul 2012, Bordeaux, France

Communication dans un congrès hal-04423483v1

Using a two step plasma etching process for diamond power devices

F. Thion , K. Isoird , Dominique Planson , Marie-Laure Locatelli , Henri Schneider et al.

International Conference on Diamond and Carbon Materials Granada, SPAIN, 2012, Granada, Spain

Communication dans un congrès hal-03966086v1
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Protections périphériques des composants 1200 V

Florian Chevalier , Pierre Brosselard , D. Tournier , Bertrand Vergne , Nicolas Dheilly et al.

14ème EPF, Jul 2012, Bordeaux, France. 4 p

Communication dans un congrès hal-04560447v1
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A path toward high voltage devices : 3.3 kV 4H-SiC JBS and JFET

F Chevalier , G Grosset , L Dupuy , Dominique Tournier , Dominique Planson et al.

HETECH, Nov 2012, Barcelone, France

Communication dans un congrès hal-01113179v1

4H-SiC P +N UV photodiodes: A comparison between beam and plasma doping processes

Stéphane Biondo , Laurent Ottaviani , Mihai Lazar , Dominique Planson , Julian Duchaine et al.

CSCRM, Sep 2011, Cleveland, United States

Communication dans un congrès hal-00747301v1
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Protections périphériques de diodes bipolaires 10 kV en SiC-4H

Duy Minh Nguyen , Runhua Huang , Bertrand Vergne , Pascal Bevilacqua , Philippe Godignon et al.

14ème Conférence Electronique de Puissance du Futur (EPF 2012), Jul 2012, Bordeaux, France

Communication dans un congrès hal-04560471v1
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Investigations on Ni-Ti-Al ohmic contacts obtained on p-type 4H-SiC

Farah Laariedh , Mihai Lazar , Pierre Cremilleu , Jean-Louis Leclercq , Dominique Planson

HeteroSiC & WASMPE 2011, Jun 2011, Tours, France. pp.169-173, ⟨10.4028/www.scientific.net/MSF.711.169⟩

Communication dans un congrès hal-00661507v1
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Evaluation of silver-sintering die attach

Wissam Sabbah , Raphaël Riva , Stanislas Hascoët , Cyril Buttay , Stephane Azzopardi et al.

7th CIPS, Mar 2012, Nuremberg, Germany. pp.237-243

Communication dans un congrès hal-00707733v1
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Towards Very High Voltage SiC Power Devices

Dominique Planson , Pierre Brosselard , Dominique Tournier , L V Phung , C. Brylinski

PRiME 2012-ECS, Oct 2012, Honolulu-Hawaii, United States. ⟨10.1149/05003.0425ecst⟩

Communication dans un congrès hal-02116906v1
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Report de puce par frittage d'argent - mise en oeuvre et analyse

Amandine Masson , Wissam Sabbah , Raphaël Riva , Cyril Buttay , Stephane Azzopardi et al.

14ème EPF, Jul 2012, Bordeaux, France. pp.CD (ref 61)

Communication dans un congrès hal-00729156v1
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Diode PiN 6500V en SiC-4H

Pierre Brosselard , Runhua Huang , Duy Minh Nguyen , Dominique Planson , Lionel Dupuy et al.

14ème EPF, Jul 2012, Bordeaux, France. 4 p

Communication dans un congrès hal-04573111v1
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SIMS analyses applied to open an optical window in 4H-SiC devices for electro-optical measurements

Mihai Lazar , François Jomard , Duy Minh Nguyen , Christophe Raynaud , Gontran Pâques et al.

ICSCRM, Sep 2011, Cleveland, United States

Communication dans un congrès hal-00747300v1
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Edge termination design improvements for 10 kV 4H-SiC bipolar diodes

D M Nguyen , R Huang , L V Phung , Maxime Berthou , P Godignon et al.

Silicon Carbide and Related Materials 2012, Sep 2012, Saint-Pétersbourg, Russia

Communication dans un congrès hal-03316271v1
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Design and characterization of a novel 3.3 kV 4H-SiC JFET

Florian Chevalier , Pierre Brosselard , D. Tournier , Grégory Grosset , Lionel Dupuy et al.

Proceedings of the 2012 European Conference on Silicon Carbide and Related Materials ECSCRM, Sep 2012, Saint-Pétersbourg, Russia. 4p

Communication dans un congrès hal-04048180v1
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600 V PiN diodes fabricated using on-axis 4H silicon carbide

Gabriel Civrac , Farah Laariedh , Nicolas Thierry-Jebali , Mihai Lazar , Dominique Planson et al.

International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), Sep 2011, Cleveland, United States. pp.969-972, ⟨10.4028/www.scientific.net/MSF.717-720.969⟩

Communication dans un congrès hal-00747295v1
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Réalisation et caractérisation de diodes Schottky en diamant monocristallin protégées par plaque de champ sur Si3N4

Fabien Thion , Karine Isoird , Dominique Planson , Marie-Laure Locatelli , Henri Schneider et al.

14ème EPF, Jul 2012, Bordeaux, France. 4 p

Communication dans un congrès hal-01005917v1
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PASChAC, système automatisé de caractérisation de composants sur wafer

Bertrand Vergne , Gontran Pâques , Claudia Maurer , Sigo Scharnholz , Pierre Brosselard et al.

Electronique de Puissance du Futur 2012, Jul 2012, Bordeaux, France

Communication dans un congrès hal-02282734v1

OBIC measurements on avalanche diodes in 4H-SiC for the determination of impact ionization coefficients

Duy Minh Nguyen , Christophe Raynaud , Mihai Lazar , Gontran Pâques , Sigo Scharnholz et al.

CSCRM, Sep 2011, Cleveland, United States

Communication dans un congrès hal-00747298v1
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Réalisation de contact ohmique sur SiC-4H type P

Farah Laariedh , Mihai Lazar , Pierre Cremillieu , Jean -Louis Leclercq , Dominique Planson

JNRDM2011, May 2011, Paris, France

Communication dans un congrès hal-04560246v1

Avalanche Diodes with Low Temperature Dependence in 4H-SiC Suitable for Parallel Protection

Duy Minh Nguyen , Gontran Pâques , Nicolas Dheilly , Christophe Raynaud , Dominique Tournier et al.

CSCRM, Aug 2010, Oslo, Norway

Communication dans un congrès hal-00661470v1

Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications

Dominique Tournier , Pierre Brosselard , Christophe Raynaud , Mihai Lazar , Hervé Morel et al.

CIMA, Mar 2011, Beyrouth, Lebanon. pp.CD

Communication dans un congrès hal-00661500v1
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Pulse characterization of optically triggered SiC thyristors

Nicolas Dheilly , Gontran Pâques , Sigo Scharnholz , Dominique Planson

International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM'2011), Philipp Neudeck, Sep 2011, Cleveland, United States. pp.FR-1A-3

Communication dans un congrès hal-00747341v1

Parallel and serial association of SiC light triggered thyristors

Nicolas Dheilly , Gontran Pâques , Sigo Scharnholz , Dominique Planson

HeteroSiC & WASMPE 2011, Jun 2011, Tours, France

Communication dans un congrès hal-00661520v1
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Influence of the Masking Material and Geometry on the 4H-SiC RIE Etched Surface State

Mihai Lazar , Fabrice Enoch , Farah Laariedh , Dominique Planson , Pierre Brosselard

CSCRM, Aug 2010, Oslo, Norway. pp.477-480, ⟨10.4028/www.scientific.net/MSF.679-680.477⟩

Communication dans un congrès hal-00661443v1
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Influence of P+ layer parameters on 4H-SiC UV PiN photodetector characteristics

Laurent Ottaviani , Stéphane Biondo , Mihai Lazar , Wilfried Vervisch , Julian Duchaine et al.

WOCSDICE, May 2011, Catania, Italy. pp.181

Communication dans un congrès hal-00661522v1

Perspectives on SiC and III-N Based Devices for Power Electronics

Christian Brylinski , Dominique Planson

220th ECS Meeting, The Electrochemical Society, Oct 2011, Boston, United States. pp.139-152, ⟨10.1149/1.3631492⟩

Communication dans un congrès hal-02865456v1

Réalisation de Diodes SiC Simples pour l'Etude de Passivations

Gontran Pâques , Sigo Scharnholz , Jens-Peter Konrath , Bertrand Vergne , Nicolas Dheilly et al.

13ème EPF, Jun 2010, Saint-Nazaire, France

Communication dans un congrès hal-00618701v1

A Step Toward High Temperature Intelligent Power Modules Using 1.5kV SiC-BJT

Dominique Tournier , Pascal Bevilacqua , Pierre Brosselard , Dominique Planson

CSCRM, Oct 2009, Nuremberg, Germany. pp.1155-1158, ⟨10.4028/www.scientific.net/MSF.645-648.1155⟩

Communication dans un congrès hal-00496976v1
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Protection périphérique pour composants de puissance en diamant

Fabien Thion , Karine Isoird , Dominique Planson , Marie-Laure Locatelli

13ème EPF, Jun 2010, Saint-Nazaire, France. 4p

Communication dans un congrès hal-00618708v1
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Optical triggering of 4H-SiC thyristors with a 365 nm UV LED

Nicolas Dheilly , Gontran Pâques , Dominique Planson , P Bevilacqua , S Scharnholz

European Conference on Silicon Carbide and Related Materials ECSCRM-2010, Aug 2010, Oslo (Norway), Norway. ⟨10.4028/www.scientific.net/MSF.679-680.690⟩

Communication dans un congrès hal-03990671v1
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Investigation of Epitaxial SiC PiN Diodes with Variable Mesa Height

Gontran Pâques , Nicolas Dheilly , Dominique Planson , Sigo Scharnholz , Rik W. de Doncker et al.

European Conference on Silicon Carbide and Related Materials ECSCRM-2010, Aug 2010, Oslo (Norway), Norway

Communication dans un congrès hal-04349694v1
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Graded Etched Junction Termination for SiC Thyristors

Gontran Pâques , Nicolas Dheilly , Dominique Planson , Rik W. de Doncker , Sigo Scharnholz

European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), Aug 2010, Oslo, Norway

Communication dans un congrès hal-04347104v1

SiC BJT driver applied to a 2 kW inverter: Performances and limitations

Dominique Tournier , Pascal Bevilacqua , Pierre Brosselard , Dominique Planson , Bruno Allard

6th CIPS, Mar 2010, Nuremberg, Germany

Communication dans un congrès hal-00579223v1
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Simulation and design of junction termination structures for diamond Schottky diodes

Fabien Thion , Karine Isoird , Dominique Planson , Marie-Laure Locatelli , H Ding

European Conference on Diamond Diamond-like Materials Carbon Nanotubes and Nitrides (DIAMOND 2010), Sep 2010, Budapest, Hungary

Communication dans un congrès hal-03656932v1

Conception d'une protection périphérique originale pour composants bipolaires en carbure de silicium (SiC)

Nicolas Dheilly , Dominique Planson , Gontran Pâques , Sigo Scharnholz

13ème EPF, Jun 2010, Saint-Nazaire, France

Communication dans un congrès hal-00618709v1

Chambre à Vide de Caractérisation Haute Tension de Composants Semiconducteurs Nus

Bertrand Vergne , Gontran Pâques , Jens-Peter Konrath , Sigo Scharnholz , Nicolas Dheilly et al.

13ème EPF, Jun 2010, Saint-Nazaire, France

Communication dans un congrès hal-00618684v1
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State of the art of High Temperature Power Electronics

Cyril Buttay , Dominique Planson , Bruno Allard , Dominique Bergogne , Pascal Bevilacqua et al.

Microtherm, Jun 2009, Lodz, Poland. pp.8-17

Communication dans un congrès hal-00413349v1

Temperature Dependence lifetime measurements on 3.3kV 4H-SiC PiN Diodes using OCVD Technique

Nicolas Dheilly , Dominique Planson , Pierre Brosselard , Hassan Jawad , Pascal Bevilacqua et al.

ECSCRM European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelone, Spain. pp.703-706, ⟨10.4028/www.scientific.net/MSF.615-617.703⟩

Communication dans un congrès hal-00391369v1

Current limiting with SiC JFET structures

Dominique Tournier , Dominique Bergogne , Asif Hamoud , Dominique Planson , Rami Mousa et al.

5th CIPS, Mar 2008, Nuremberg, Germany. pp.08.5

Communication dans un congrès hal-00373046v1
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Characterization of 4H-SiC junction barrier Schottky diodes by admittance vs. temperature analyses

Christophe Raynaud , D M Nguyen , Pierre Brosselard , A Pérez-Tomás , Dominique Planson et al.

European Conference on Silicon Carbide and Related Materials ECSCRM 2008, Sep 2008, Barcelone, Spain

Communication dans un congrès hal-03331775v1

Normally-on devices and circuits, SiC and high temperature : using SiCJFETs in power converters

Dominique Bergogne , Hervé Morel , Dominique Tournier , Bruno Allard , Dominique Planson et al.

5th CIPS, Mar 2008, Nuremberg, Germany. pp.08.2

Communication dans un congrès hal-00372982v1
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SiC Power Semiconductor Devices for new Applications in Power Electronics

Dominique Planson , Dominique Tournier , Pascal Bevilacqua , Nicolas Dheilly , Hervé Morel et al.

13th IEEE PEMC, Sep 2008, Poznan, Poland. pp.2457 - 2463, ⟨10.1109/EPEPEMC.2008.4635632⟩

Communication dans un congrès hal-00373016v1

Modeling and high temperature characterization of SiC-JFET

Rami Mousa , Dominique Planson , Hervé Morel , Bruno Allard , Christophe Raynaud

IEEE PESC, Jun 2008, Rhodes, Greece. pp.3111 - 3117, ⟨10.1109/PESC.2008.4592430⟩

Communication dans un congrès hal-00369420v1
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Composant de protection série en SiC 450A de forte densité de puissance

D. Tournier , Pascal Bevilacqua , Hervé Morel , Dominique Planson , Pierre Brosselard et al.

12ème colloque Electronique de Puissance du Futur, Jul 2008, Tours, France

Communication dans un congrès hal-04624757v1
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Protection périphérique d’une diode bipolaire SiC-4H. Simulation électrique de JTE à dopage variable

Dominique Planson , Nicolas Dheilly , Pierre Brosselard , D. Tournier

12ème colloque Electronique de Puissance du Futur, Jul 2008, Tours, France

Communication dans un congrès hal-04606517v1
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Contact ohmique de faible résistivité sur SiC-4H dopé type-P

M Soueidan , Mihai Lazar , D. Tournier , Dominique Planson , Christophe Raynaud et al.

4eme colloque sur les Matériaux du Génie Electrique, May 2008, Toulouse, France

Communication dans un congrès hal-04606381v1
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Prospective sur les composants de puissance verticaux grand gap (Carbure de Silicium et Diamant) et leurs applications

Michel Mermet-Guyennet , Hervé Morel , Dominique Planson , Henri Schneider , Jocelyn Achard

12e EPF (Electronique de Puissance du Futur), Jul 2008, Tours, France

Communication dans un congrès hal-04606571v1

SiC JFET for high temperature power switches

Dominique Bergogne , Dominique Tournier , Rami Mousa , Mohsen Shafiee Khoor , Dominique Planson et al.

5th CIPS, Mar 2008, Nuremberg, Germany. pp.08.4

Communication dans un congrès hal-00373058v1

Use of Graphite Cap to Reduce Unwanted Post-Implantation Annealing Effects in SiC

Erwan Oliviero , Mihai Lazar , Heu Vang , Christiane Dubois , Pierre Cremilleu et al.

CSCRM, Sep 2006, Newcastle upon Tyne, United Kingdom. pp.611-614, ⟨10.4028/www.scientific.net/MSF.556-557.611⟩

Communication dans un congrès hal-00368931v1
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Comparison of electrical properties of ohmic contact realized on p-type 4H-SiC

D M Nguyen , Christophe Raynaud , Mihai Lazar , H Vang , Dominique Planson

ICSCRM'2007, Oct 2007, Otsu, Japan

Communication dans un congrès hal-02961607v1
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New Applications in Power Electronics Based on SiC Power Devices

Hervé Morel , Dominique Bergogne , Dominique Planson , Bruno Allard , Régis Meuret

ICSCRM'2007, Oct 2007, Otsu, Japan. pp.925-930, ⟨10.4028/www.scientific.net/MSF.600-603.925⟩

Communication dans un congrès hal-02958610v1
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Determination of ambipolar lifetime and epilayer thickness of 5 kV SiC bipolar devices by switching transient studies

Tarek Ben Salah , Damien Risaletto , Christophe Raynaud , Kamel Besbes , Dominique Bergogne et al.

ICSCRM'2007, Oct 2007, Otsu, Japan. pp.1031-1034, ⟨10.4028/www.scientific.net/MSF.600-603.1031⟩

Communication dans un congrès hal-02958620v1
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Diode PiN SiC-4H 1,2kV sur épi-wafer SiCrystal

Heu Vang , Christophe Raynaud , Pierre Brosselard , Mihai Lazar , Pierre Cremillieu et al.

11ème colloque Electronique de Puissance du Futur, Jul 2006, Grenoble, France

Communication dans un congrès hal-04618792v1
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High temperature operating converter

Dominique Bergogne , Pascal Bevilacqua , Dominique Planson , Hervé Morel

4th CIPS, Jun 2006, Naples, Italy. pp.201-204

Communication dans un congrès hal-00413394v1
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Towards an integrated inverter based on lateral JFET SiC

J. Gié , Mihai Lazar , Dominique Planson , Dominique Bergogne , Pascal Bevilacqua et al.

4th CIPS, Jun 2006, Naples, Italy. pp.171-176

Communication dans un congrès hal-00413390v1
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Deep SiC etching with RIE

Mihai Lazar , Heu Vang , Pierre Brosselard , Christophe Raynaud , Pierre Cremilleu et al.

E-MRS 2006, May 2006, Nice, France. pp.3886392

Communication dans un congrès hal-03305997v1

Current sensing for SiC Power Devices

Dominique Tournier , Miquel Vellvehi , Philippe Godignon , Josep Montserrat , Dominique Planson et al.

CSCRM, Sep 2005, Pittsburgh, PA, United States. pp.1215-1218

Communication dans un congrès hal-00391433v1
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Étude de cascodes SiC en vue d’applications électroniques impulsionnelles

Gontran Pâques , Sigo Scharnholz , Heu Vang , Dominique Planson

11ème colloque Electronique de Puissance du Futur, Jul 2006, Grenoble, France

Communication dans un congrès hal-04618765v1
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Ni-Al Ohmic contact to p-type 4H-SiC

Heu Vang , Mihai Lazar , Pierre Brosselard , Christophe Raynaud , Pierre Cremilleu et al.

2006 Spring Meeting of the European Materials Research Society (E-MRS 2006), May 2006, Nice, France. ⟨10.1016/j.spmi.2006.08.004⟩

Communication dans un congrès hal-03316263v1
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Optimisation de la structure double RESURF d’un transistor JFET latéral SiC-4H pour le développement de convertisseurs de puissance intégrés

Johnny Gié , Mihai Lazar , Pierre Brosselard , Dominique Planson , Christophe Raynaud

11ème colloque Electronique de Puissance du Futur, Jul 2006, Grenoble, France

Communication dans un congrès hal-04619604v1
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Onduleur à JFET sans diode de roue libre externe

Dominique Bergogne , Pierre Lefranc , D. Tournier , Pascal Bevilacqua , Dominique Planson et al.

11ème colloque Electronique de Puissance du Futur, Jul 2006, Grenoble, France

Communication dans un congrès hal-04618123v1

300 °C operating junction temperature inverter leg investigations

Dominique Bergogne , Pascal Bevilacqua , Sabrine M'Rad , Dominique Planson , Hervé Morel et al.

EPE, Sep 2005, Dresden, Germany

Communication dans un congrès hal-00413402v1
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Gravure RIE profonde du SiC pour la réalisation de composants de puissance

Heu Vang , T. Morel , F. Chaboud , Pierre Brosselard , Pierre Cremillieu et al.

3eme colloque sur les Matériaux du Génie Electrique, Dec 2005, Lyon, France

Communication dans un congrès hal-04620248v1
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SiC-based current limiter devices

Jean-Pierre Chante , Dominique Tournier , Dominique Planson , Christophe Raynaud , Mihai Lazar et al.

International Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France. pp.951-956, ⟨10.4028/www.scientific.net/MSF.457-460.951⟩

Communication dans un congrès hal-04032970v1
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Silicon Carbide Controlled Current Limiter, Current Limitation Strategies, Foreseen Applications and Benefits

Dominique Planson , Dominique Tournier , Jean-Pierre Chante , Pascal Bevilacqua , Christophe Raynaud et al.

International Power Electronics and Motion Control (IPEMC'04), Aug 2004, Xi'an, China

Communication dans un congrès hal-02468376v1
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HIGH VOLTAGE AND SPECIFIC POWER SILICON CARBIDE DEVICES

Dominique Planson , Marie-Laure Locatelli , Mihai Lazar , Christophe Raynaud , Jean-Pierre Chante et al.

10ème colloque Electronique de Puissance du Futur, Sep 2004, Toulouse, France

Communication dans un congrès hal-04621819v1
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P-type SiC layers formed by VLS induced selective epitaxial growth

Mihai Lazar , C Jacquier , Ch Dubois , Christophe Raynaud , G Ferro et al.

European Conference on Silion Carbide and Related Materials (ECSCRM 2004), Sep 2004, Bologne, Italy

Communication dans un congrès hal-02953086v1
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Conception d'un transistor JFET 5 kV en SiC-4H

Pierre Brosselard , Dominique Planson , Léa Di Cioccio , Thierry Billon , Sigo Scharnholz et al.

10ème colloque Electronique de Puissance du Futur, Sep 2004, Toulouse, France

Communication dans un congrès hal-04621465v1
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A 3.5 kV thyristor in 4H-SiC with a JTE periphery

Pierre Brosselard , Thierry Bouchet , Dominique Planson , Sigo Scharnholz , Gontran Pâques et al.

European Conference on Silion Carbide and Related Materials (ECSCRM 2004), Sep 2004, Bologne, Italy

Communication dans un congrès hal-02953080v1
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Active clamping of IGBT: capacitor replaces TRANSIL diodes

Pierre Lefranc , Dominique Bergogne , Dominique Planson , Bruno Allard , Hervé Morel et al.

10th European Conference on Power Electronics and Applications (EPE'2003), Sep 2003, Toulouse, France

Communication dans un congrès hal-02497603v1
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Design, fabrication and characterisation of 5 kV 4H-SiC p + n planar bipolar diodes protected by junction termination extension

Christophe Raynaud , M. Lazar , Dominique Planson , J.-P Chante , Z. Sassi

International Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France

Communication dans un congrès hal-02498145v1
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The role of the ion implanted emitter state on 6H-SiC power diodes behaviour. A statistical study.

M Lazar , G Cardinali , C Raynaud , A Poggi , Dominique Planson et al.

International Conference on Silicon Carbide and Related Materials (ICSCRM 2003), Oct 2003, Lyon, France

Communication dans un congrès hal-02941715v1
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Influence of different peripheral protections on the breakover voltage of a 4H-SiC GTO thyristor

Pierre Brosselard , Volker Zorngiebel , Dominique Planson , Sigo Scharnholz , J.-P Chante et al.

International Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France

Communication dans un congrès hal-02503456v1
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Electrothermal simulations of silicon carbide current limiting devices

Dominique Planson , J.P. Chante , M. Lazar , P. Brosselard , Christophe Raynaud et al.

2003 IEEE International Conference on Industrial Technology, Dec 2003, Maribor, Slovenia. pp.1135-1140, ⟨10.1109/ICIT.2003.1290823⟩

Communication dans un congrès hal-02498210v1

On chip temperature monitoring of a SiC current limiter

Dominique Tournier , Philippe Godignon , José Millán , Jean-Pierre Chante , Dominique Planson et al.

International Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France

Communication dans un congrès hal-02949618v1

Silicon Carbide specific components for power electronics system protection

J.-P Chante , Dominique Planson , Christophe Raynaud , Marie-Laure Locatelli , M. Lazar et al.

International Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France

Communication dans un congrès hal-02503449v1
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Current limitation with SiC devices

D Tournier , P. Godignon , Dominique Planson , F. Nallet , J. Millán et al.

10th European Conference on Power Electronics and Applications (EPE'2003), Sep 2003, Toulouse, France

Communication dans un congrès hal-02497590v1
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Design and simulation of a planar anode GTO thyristor on SiC

Pierre Brosselard , Dominique Planson , Sigo Scharnholz , V. Zorngiebel , Mihai Lazar et al.

CAS (International Semiconductor Conference), Sep 2003, Sinaia, Romania. pp.222, ⟨10.1109/SMICND.2003.1252421⟩

Communication dans un congrès hal-00410085v1
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Study of suitable dielectric material properties for high electric field and high temperature power semiconductor environment

Marie-Laure Locatelli , Karine Isoird , Sorin Dinculescu , Vincent Bley , Thierry Lebey et al.

10th European Conference on Power Electronics and Applications (EPE'2003), Sep 2003, Toulouse, France

Communication dans un congrès hal-02492270v1
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Towards the Fabrication and Measurement of High Sensitivity SiC-UV Detectors with Oxide Ramp Termination

G Brezeanu , Philippe Godignon , E Dimitrova , C Raynaud , Dominique Planson et al.

International Conference on Silicon Carbide and Related Materials (ICSCRM 2003), Oct 2003, Lyon, France

Communication dans un congrès hal-02937545v1
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Substrat SiCOI : Avancées vers les applications « System on Chip »

Nicolas Daval , François Templier , Fabrice Letertre , Marie-Laure Locatelli , Dominique Planson et al.

EPF2002 - Colloque 2002, Electronique de Puissance du Futur, Nov 2002, Montpellier, France

Communication dans un congrès hal-04400220v1
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Contact resistivity of Al/Ti ohmic contacts on p-type ion implanted 4H and 6H-SiC

Roberta Nipoti , Francesco Moscatelli , Andrea Scorzoni , Antonella Poggi , Gian Carlo Cardinali et al.

2002 MRS Fall Meeting, Dec 2002, Boston, United States. ⟨10.1557/PROC-742-K6.2⟩

Communication dans un congrès hal-02485106v1
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Very low R/sub ON/ measured on 4H-SiC accu-MOSFET high power device

F. Nallet , P. Godignon , Dominique Planson , Christophe Raynaud , J.P. P Chante

14th International Symposium on Power Semiconductor Devices and ICs, Jun 2002, Sante Fe, United States. pp.209-212, ⟨10.1109/ISPSD.2002.1016208⟩

Communication dans un congrès hal-02471269v1
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OBIC measurements on 1.3 kV 6H-SiC bipolar diodes protected by Junction Lateral Extension

S.R. Wang , Christophe Raynaud , Dominique Planson , Mihai Lazar , Jean-Pierre Chante

European Conference on Silicon Carbide and Related Materials (ECSCRM 2002), Sep 2002, Linköping, Sweden

Communication dans un congrès hal-02464381v1
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COMPOSANT NνN POUR L'ETUDE DE LA ZCEM (ZONE DE CHARGE D'ESPACE MIXTE) DES TRANSISTORS MOS

Guillaume Verneau , Laurent Aubard , Thierry Bouchet , Jacques Arnould , Pierre Brosselard et al.

Electronique de Puissance du Futur (EPF 2002), Nov 2002, Montpellier (FR), France

Communication dans un congrès hal-04390458v1
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A New Process for the Fabrication of SiC Power Devices and Systems on SiCOI (Silicon Carbide On Insulator) Substrates

François Templier , Nicolas Daval , Léa Di Cioccio , Daniel Bourgeat , Fabrice Letertre et al.

2002 MRS Fall Meeting, Dec 2002, Boston, United States. ⟨10.1557/PROC-742-K7.9⟩

Communication dans un congrès hal-02298409v1
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A 4H-SiC high-power-density VJFET as controlled current limiter

Dominique Tournier , Philippe Godignon , Josep Montserrat , Dominique Planson , Christophe Raynaud et al.

Industry Applications Society (IAS'02), Oct 2002, Pittsburgh (Pennsylvania), United States. pp.2248-2251

Communication dans un congrès hal-02477074v1

Characterization of a 4H-SiC High Power Density Controlled Current Limiter

Dominique Tournier , Xavier Jorda , Josep Montserrat , Dominique Planson , Christophe Raynaud et al.

European Conference on Silicon Carbide and Related Materials (ECSCRM 2002), Sep 2002, Linköping, Sweden

Communication dans un congrès hal-02458130v1
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Limiteur de courant à forte densité de puissance en carbure de silicium

Dominique Tournier , Philippe Godignon , Josep Montserrat , Dominique Planson , Christophe Raynaud et al.

Electronique de Puissance du Futur (EPF 2002), Nov 2002, Montpellier (FR), France

Communication dans un congrès hal-04398450v1

SiC On Insulator as substrate for power Schottky diodes

N. Daval , F Templier , F. Letertre , Dominique Planson , Léa Di Cioccio et al.

European Conference on Silicon Carbide and Related Materials (ECSCRM 2002), Sep 2002, Linköping, Sweden

Communication dans un congrès hal-02464356v1
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Fabrication and Characterisation of High Voltage SiC-Thyristors

Volker Zorngiebel , S. Scharnholz , E. Spahn , P Brosselard , Jean-Pierre Chante et al.

European Conference on Silicon Carbide and Related Materials (ECSCRM 2002), Sep 2002, Linköping, Sweden

Communication dans un congrès hal-02485104v1
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Simulation study of a new current limiting device : a vertical alpha-SiC etched JFET - Controlled Current Limiter

Dominique Tournier , Phillippe Godignon , Josep Montserrat , Dominique Planson , Jean-Pierre P Chante et al.

ICSCRM, Oct 2001, Tsukuba, Japan

Communication dans un congrès hal-02476207v1
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Study based on the numerical simulation of a 5 kV asymmetrical 4H-SiC thyristor for high power pulses application

N. Arssi , M.L. Locatelli , Dominique Planson , J.P. Chante , V. Zorngiebel et al.

CAS 2001 International Semiconductor Conference, Oct 2001, Sinaia, Romania. pp.341-344, ⟨10.1109/SMICND.2001.967479⟩

Communication dans un congrès hal-02145398v1

Study of 6H-SiC high voltage bipolar diodes under reverse biases

Karine Isoird , Mihai Lazar , Laurent Ottaviani , Marie-Laure Locatelli , Christophe Raynaud et al.

European Materials Research Society (E-MRS Spring Meeting) 2001, Jun 2001, Strasbourg, France

Communication dans un congrès hal-03712596v1
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Realization of a High Current and Low RON 600V Current Limiting Device

F Nallet , P Godignon , Dominique Planson , Christophe Raynaud , Jean-Pierre P Chante

International Conference on Silicon Carbide and Related Materials, Oct 2001, Tsukuba, Japan

Communication dans un congrès hal-02975963v1
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4H-SiC bipolar power diodes realized by ion implantation

M. Lazar , Dominique Planson , K. Isoird , Marie-Laure Locatelli , Christophe Raynaud et al.

CAS 2001 International Semiconductor Conference, Oct 2001, Sinaia, Romania. pp.349-352, ⟨10.1109/SMICND.2001.967481⟩

Communication dans un congrès hal-02145397v1
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A comparative study of high temperature Aluminium post-implantation annealing in 6H and 4H-SiC, non-uniformity temperature effects

M. Lazar , Christophe Raynaud , Dominique Planson , Marie-Laure Locatelli , K. Isoird et al.

ICSCRM, Oct 2001, Tsukuba, Japan

Communication dans un congrès hal-02476227v1
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Compatibility of VJFET Technology with MESFET Fabrication and Its Interest for System Integration: Fabrication of 6H and 4H-SiC 110 V Lateral MESFET

Dominique Tournier , Phillippe Godignon , Josep Montserrat , Dominique Planson , Jean-Pierre P Chante et al.

ICSCRM, Oct 2001, Tsukuba, Japan

Communication dans un congrès hal-02471274v1
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Study of 4H-SiC high voltage bipolar diodes under reverse biases using electrical and Obic characterization

K Isoird , M Lazar , Marie-Laure Locatelli , Christophe Raynaud , Dominique Planson et al.

ICSCRM, Oct 2001, Tsukuba, Japan

Communication dans un congrès hal-02975956v1

Bipolar silicon carbide power diodes realized by aluminum implantations and high temperature rf-annealing

Mihai Lazar , Karine Isoird , Laurent Ottaviani , Marie-Laure Locatelli , Christophe Raynaud et al.

43rd Electronic Materials Conference (EMC 2001), Jun 2001, Notre Dame, IN, United States

Communication dans un congrès hal-02275712v1

Experimental characterization of a 4H-SiC high voltage current limiting device

Franck Nallet , Dominique Planson , Philippe Godignon , Marie-Laure Locatelli , Mihai Lazar et al.

European Materials Society (E-MRS Spring Meeting) 2001, symposium F, Jun 2001, Strasbourg, France

Communication dans un congrès hal-03714731v1
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Electrical and electrothermal 2D simulations of a 4H-SiC high voltage current limiting device for serial protection applications

F. Nallet , A Sénès , Dominique Planson , M.L. Locatelli , J.P. Chante et al.

3rd International Conference on Power Electronics and Motion Control, Aug 2000, Beijing, China. pp.396-401, ⟨10.1109/IPEMC.2000.885436⟩

Communication dans un congrès hal-04386905v1
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Electrical and electrothermal 2D simulations of a 4H-SiC high voltage current limiting device for serial protection applications

F. Nallet , A. Senes , Dominique Planson , Marie-Laure Locatelli , J.P. Chante et al.

12th International Symposium on Power Semiconductor Devices & ICs. Proceedings, May 2000, Toulouse, France. pp.287-290, ⟨10.1109/ISPSD.2000.856827⟩

Communication dans un congrès hal-02972084v1
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High Electrical Activation of Aluminium and Nitrogen Implanted in 6H-SiC at Room Temperature by RF Annealing

Mihai Lazar , Laurent Ottaviani , Marie-Laure Locatelli , Christophe Raynaud , Dominique Planson et al.

European Conference on Silicon Carbide and Related Materials 2000 (ECSCRM 2000), Sep 2000, Kloster Banz, Germany. pp.MoP-72

Communication dans un congrès hal-02151711v1
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Evaluation of losses in a switching cell using the finite element method. Comparison between silicon and silicon carbide components

Dominique Planson , S. Margenat , F. Nallet , Hervé Morel , Marie-Laure Locatelli et al.

3rd International Conference on Power Electronics and Motion Control, Aug 2000, Beijing, China. pp.241-245, ⟨10.1109/IPEMC.2000.885364⟩

Communication dans un congrès hal-04386919v1

Silicon carbide power devices

J.P. Chante , M.L. Locatelli , Dominique Planson , L. Ottaviani , E. Morvan et al.

1998 International Semiconductor Conference. CAS'98 Proceedings, Oct 1998, Sinaia, Romania. pp.125-134, ⟨10.1109/SMICND.1998.732305⟩

Communication dans un congrès hal-04277218v1
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The negative temperature coefficient of the breakdown voltage of SiC p-n structures and deep centers in SiC

A A Lebedev , A M Strel'Chuk , S. Ortolland , Christophe Raynaud , Marie-Laure Locatelli et al.

International Conference on Silicon Carbide and Related Materials ICSCRM'95, Sep 1995, Kyoto, Japan

Communication dans un congrès hal-03712441v1
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A SIMULATION SYSTEM FOR A POWER INSULATED GATE BIPOLAR TRANSISTOR (IGBT) WITH TSUPREM-4 AND MEDICI SIMULATORS

Shan-Qi Zhao , Dominique Planson , Jean-Pierre Chante

7th European Simulation Symposium (ESS-1995), Oct 1995, Erlangen-Nuremberg, Germany

Communication dans un congrès hal-02968512v1
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Study of Silicon Carbide high voltage ability: experimental results on expitaxial-emitter and implanted-emitter diodes

Marie-Laure Locatelli , Sylvie Ortolland , Frédéric Lanois , Dominique Planson , Thierry Billon et al.

International Seminar on Silicon Carbide Semiconductor and SiC-based devices, Sep 1995, Novgorod, Russia

Communication dans un congrès hal-02972067v1

Optical Beam Induced Current Measurements: principles and applications to SiC device characterisation

Christophe Raynaud , Duy Minh Nguyen , Nicolas Dheilly , Dominique Tournier , Pierre Brosselard et al.

Peter Friedrichs, Tsunenobu Kimoto, Lothar Ley, Gerhard Pensl. Silicon Carbide: Volume 1: Growth, Defects, and Novel Applications, Wiley, 319-340 (chapitre 12), 2009

Chapitre d'ouvrage hal-00661529v1

Silicon carbide applications in power electronics

Marie-Laure Locatelli , Dominique Planson

Robert Perret. Power Electronics Semiconductor Devices, Wiley-ISTE, pp.185-265, 2009

Chapitre d'ouvrage hal-00661525v1

Applications du carbure de silicium en électronique de puissance

Marie-Laure Locatelli , Dominique Planson

Robert Perret. Mise en oeuvre des composants électroniques de puissance, HERMES, pp.243-324, 2003

Chapitre d'ouvrage hal-03925159v1