Dominique Planson
Présentation
M. Dominique Planson Téléphone : 04 72 43 87 24 Ingénieur INSA-GE, option Micro-électronique (91), DEA-DEI (91), Docteur INSA (1994)
Publications
Publications
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Stress and doping analysis of low n-doped GaN layers grown on GaN, silicon and sapphire substrates by micro-Raman 2. Physics and characterizationICNS-15 - the 15th International Conference on Nitride Semiconductors, Jul 2025, Malmö, Sweden |
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Raman and photoluminescence characterization of β-Ga2O3 for power electronic applicationWORKSHOP ON GALLIUM OXIDE AND RELATED MATERIALS, Sep 2025, Grenoble, France |
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An improved TCAD simulation procedure for platinum diffused silicon power diodesInternational Symposium on Power Semiconductor Devices and ICs (ISPSD), Jun 2025, Kumamoto, Japan |
Probing Fermi Energy and Temperature-Dependent Shifts in Doped Homo-Epitaxial GaN Layers Using Micro-Raman SpectroscopyICNS-15 - the 15th International Conference on Nitride Semiconductors, Jul 2025, Malmö, Sweden |
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Mesures µ-OBIC sur diode bipolaire Diamant : une première !Symposium de Génie Electrique (SGE 2025), Jul 2025, Toulouse, France |
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Analysis of Robustness of 650 V GaN HEMT under Repetitive Short-CircuitsESREF 2025 : 36th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 2025, Université de Bordeaux, ADERA, Oct 2025, Bordeaux, France |
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Physical and electrical characterization of wide band gap for power electronic applicationSociété Française de Physique, Jun 2025, Troyes, France |
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Electrical characterization of HV (10 kV) Power 4H-SiC Bipolar Junction TransistorInternational Conference on Silicon Carbide and Related Materials (ICSCRM 2024), Sep 2024, Raleigh (North Carolina), United States. pp.126-128 |
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Peripheral defects related to processing technique in GaN-on-GaN vertical devicesWorkshop on Nitride Semiconductors IWN 2024, Nov 2024, O'ahu (Honolulu), United States |
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Repetitive Short-circuits on 650 V GaNPCIM Europe 2024, Jun 2024, Nuremberg, Germany |
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Carrier density analysis in stressed n-doped GaN layers on sapphireGaN Marathon, Jun 2024, Vérone, Italy |
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Impact of Substrate Quality on Vertical GaN-on-GaN Schottky and PiN Devicese-MRS Fall Meeting, Sep 2024, Varsovie (Warsaw), Poland |
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Matching physical and electrical measurements (OBIC) to simulation (FEM) on high voltage bipolar diodesInternational Conference on Silicon Carbide and Related Materials (ICSCRM 2024), Sep 2024, Raleigh (North Carolina), United States. pp.591-592 |
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Design and Characterization of an Optical 4H-SiC Bipolar Junction TransistorICSCRM 2023 - International Conference on Silicon Carbide and Related Materials, Sep 2023, Sorrente, Italy |
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First Results on 1.2 kV SiC MOSFET Body Diode Robustness Tests34th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Oct 2023, Toulouse, France |
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Impact of Wide Band-Gap Semiconductors on the Design in Power ElectronicsSymposium on Advanced Technologies in Electrical Systems (SATES 2023), Mar 2023, Arras, France |
Vertical pin diodes on large freestanding (100) diamond film2023 EUROPEAN MATERIALS RESEARCH SOCIETY Spring Meeting, EUROPEAN MATERIALS RESEARCH SOCIETY, May 2023, Strasbourg, France |
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Application of the Double Source Switching Test to GaN HEMTs25th Conference on Power Electronics and Applications (and Exhibition), EPE ’23 (IEEE) ECCE Europe (Energy Conversion Congress and Expo Europe), Sep 2023, Aalborg, Denmark. ⟨10.23919/EPE23ECCEEurope58414.2023.10264519⟩ |
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Visualization of P$^+$ JTE embedded rings used for peripheral protection of high voltage Schottky diodes by the Optical Beam Induced Current (OBIC) techniqueICSCRM 2023 - International Conference on Silicon Carbide and Related Materials, Sep 2023, Sorrente, Italy |
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Emerging trends in OBIC characterization technique for Wide Bandgap semiconductor devicesInternational Semiconductor Conference (CAS-2023), IMT Bucharest, Oct 2023, Sinaia, Romania. pp.3-10, ⟨10.1109/CAS59036.2023.10303647⟩ |
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Full-SiC Single-Chip High-Side and Low-Side Dual-MOSFET for Ultimate Power Vertical Integration -Basic Concept and Technology25th Conference on Power Electronics and Applications (and Exhibition), EPE ’23 (IEEE) ECCE Europe (Energy Conversion Congress and Expo Europe), Sep 2023, Aalborg, Denmark. ⟨10.23919/EPE23ECCEEurope58414.2023.10264325⟩ |
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Full-SiC Single-Chip Buck and Boost MOSFET-JBS Converters for Ultimate Efficient Power Vertical IntegrationIEEE 30th International Conference Mixed Design of Integrated Circuits and Systems, Institute of Computer Science of AGH University of Science and Technology, Jun 2023, Kraków, Poland. https://www.mixdes.org/Mixdes3/, ⟨10.23919/MIXDES58562.2023.10203213⟩ |
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Micro-Raman characterization of vertical GaN Schottky and PN diodes46th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe and 17th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (WOCSDICE-EXMATEC 2023), May 2023, Palerme, Italy |
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Caractérisation dynamique de thyristors SiC avec gâchette amplificatrice5ème Symposium de Génie Electrique (SGE 2023), Jul 2023, Lille, France |
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Courts-circuits répétitifs non-destructifs sur des transistors HEMT-GaN 650 V5ème Symposium de Génie Electrique (SGE 2023), Jul 2023, Lille, France |
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Concept and technology for full monolithic MOSFET and JBS vertical integration in multi-terminal 4H-SiC power convertersICSCRM 2023 - International Conference on Silicon Carbide and Related Materials, Sep 2023, Sorrente, Italy |
Electrically Active Traps in Bipolar 10 kV 8 A Silicon Carbide (SiC) PiN DiodesInternational Symposium On Semiconductor Materials and Devices ISSMD 2022, Dec 2022, Bhubaneswar, India |
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Dynamic characterization of SiC thyristors with amplifying gate designE-MRS 2022 Fall Meeting, Sep 2022, Varsovie, Poland |
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Trapping effects in High-Power 4H-Silicon Carbide (4H-SiC) Bipolar PiN Rectifiers6th IEEE International Conference on Emerging Electronics (ICEE 2022), IEEE, Dec 2022, Bangalore, India |
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Multiphysics Characterizations of Vertical GaN Schottky Diodes2022 Compound Semiconductor Week (CSW), Jun 2022, Ann Arbor, United States. pp.1-2, ⟨10.1109/CSW55288.2022.9930447⟩ |
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Design of a test package for high voltage SiC diodesProceedings of the International Workshop on Integrated Power Packaging (IWIPP 2022), Aug 2022, Grenoble, France. ⟨10.1109/IWIPP50752.2022.9894223⟩ |
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Caractérisation par spectroscopie micro-Raman de diodes GaN SchottkyConférence Internationale Matériaux, Oct 2022, Lille, France |
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Monitoring Dynamic Resistance of AlGaN/GaN Schottky Diodes After Quasi-Static and Hard Switching Stresses2022 International Semiconductor Conference (CAS 2022), Oct 2022, Poiana Brasov, Romania. pp.195-198, ⟨10.1109/CAS56377.2022.9934143⟩ |
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Optimized Junction Termination Extension and Ring System for 11 kV 4H-SiC BJT2022 International Semiconductor Conference (CAS 2022), Oct 2022, Poiana Brasov, Romania. pp.191-194, ⟨10.1109/CAS56377.2022.9934390⟩ |
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Vertical current temperature analysis of GaN-on-Si epitaxy through analytical modellingSSDM 2022 - 2022 International conference on solid state devices and materials, Sep 2022, Chiba, Japan |
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Electrical behavior of vertical Schottky diodes on GaN homoepitaxyIWN 2022 - International Workshop on Nitride Semiconductors, Oct 2022, Berlin, Germany |
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Toward an Innovative Monolithic Integration of Vertical and Lateral GaN DevicesConférence Euro-méditerranéenne Matériaux, Composants et Systèmes EMCM-DS, Oct 2022, Fes, Morocco |
MULTIPHYSICS CHARACTERIZATIONS OF VERTICAL GaN SCHOTTKY DIODESPOWER 2021 (IMAPS), Nov 2021, Tours, France |
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High voltage (6kV) diamond TMBS diode design31st International Conference On Diamond and Carbon Materials, Sep 2021, Palma, Mallorca, Spain |
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Switching Behavior and Comparison of Wide Bandgap Devices for Automotive ApplicationsEPE'21 ECCE Europe, Sep 2021, Ghent, Belgium. ⟨10.23919/EPE21ECCEEurope50061.2021.9570434⟩ |
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Edge terminations for 4H-SiC power devices: a critical issueECSCRM 2020-2021, Oct 2021, Tours, France |
Homo epitaxial n-doped GaN layers investigation using Raman Spectroscopy for Vertical device applicationsEXMATEC / WOCSDICE 2021 : 15th Expert Evaluation and Control of Compounds of Semiconductor Materials and Technologies, Jun 2021, Bristol, United Kingdom |
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4H-SiC PiN diode protected by narrow field rings investigated by the micro-OBIC methodECSCRM 2020-2021, Oct 2021, Tours, France |
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Conception de diodes TMBS haute tension (6kV) en diamantSYMPOSIUM DE GENIE ELECTRIQUE (SGE 2020), Jul 2021, Nantes, France |
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Investigation of SiC thyristors with varying amplifying gate designEuropean Conference on Silicon Carbide and Related Materials (ECSCRM2020) 2021, Oct 2021, Tours, France |
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Enhanced Resonant Raman scattering of GaN functional layers using Al thin films -a versatile tool for multilayer structure analysisECSCRM2020-2021, Oct 2021, Tours, France |
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Analysis of Parasitic Elements in Power Modules Based on GaN ComponentsPCIM Europe 2020, Jul 2020, Nuremberg, Germany |
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Demonstration of the Short-circuit Ruggedness of a 10 kV Silicon Carbide Bipolar Junction TransistorEPE’20 ECCE Europe, Sep 2020, Lyon, France. ⟨10.23919/EPE20ECCEEurope43536.2020.9215769⟩ |
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Switching Loss Estimation Using a Validated Model of 650 V GaN HEMTsEPE’20 ECCE Europe, Sep 2020, Lyon, France. ⟨10.23919/EPE20ECCEEurope43536.2020.9215793⟩ |
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V TH -Hysteresis and Interface States Characterisation in SiC Power MOSFETs with Planar and Trench GateIRPS, Mar 2019, Monterey, CA, United States. ⟨10.1109/IRPS.2019.8720612⟩ |
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Interest of using a micro-meter spatial resolution to study SiC semi-conductor devices by Optical Beam Induced Current (OBIC)International Conference on Silicon Carbide and Related Materials (ICSCRM) 2019, Sep 2019, Kyoto, Japan. pp.Mo-P-23 |
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Effects of the laser beam size on the Optical Beam Induced Current (OBIC) for the study of Wide Band Gap (WBG) Semi-Conductor DevicesWorkshop on Compound Semiconductor Devices and Integrated Circuits 2019 (WOCSDICE 2019), Jun 2019, Cabourg, France |
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SiC power MOSFETs Threshold-voltage hysteresis and its impact on Short Circuit operationESARS-ITEC, IEEE, Nov 2018, Nottingham, United Kingdom. ⟨10.1109/ESARS-ITEC.2018.8607547⟩ |
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Static characteristics of 5 kV SiC BJTs and Darlington’sInternational Conference on Silicon Carbide and Related Materials (ICSCRM) 2019, Sep 2019, Kyoto, Japan |
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Experimental and simulation results of OBIC Technique Applied to Wide Bandgap Semiconductorse-MRS Fall Meeting, Sep 2018, Varsovie, Poland |
Towards SiC thyristors with amplifying gate designSymposium de Génie Electrique (SGE'18), Université de Lorraine [UL], Jul 2018, Nancy, France |
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Subthreshold Drain current hysteresis of planar SiC MOSFETsECSCRM'18, Sep 2018, Birmingham, United Kingdom. pp.TU.O4a.04 |
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Multi-barrier height characterization and DLTS study on Ti/W 4H-SiC Schottky DiodeECSCRM'18, Sep 2018, Birmingham, United Kingdom |
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Advanced Electrical characterisation of high voltage 4H-SiC PiN diodesECSCRM'18, Sep 2018, Birmingham, United Kingdom. pp.WE.P.RD2 |
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Conception and high temperature characterization of 10 kV 50 A 4H-SiC PiN diodesEuropean Conference on Silicon Carbide and Related Materials, Sep 2018, Birmingham, United Kingdom |
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Mesure et analyse de la hauteur de barrière des contacts Schottky Mo sur SiC-4HSymposium de Génie Electrique (SGE'18), Université de Lorraine [UL], Jul 2018, Nancy, France |
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SiC lateral Schottky diode technology for integrated smart power converter2018 IEEE ICIT, Feb 2018, Lyon, France. ⟨10.1109/ICIT.2018.8352287⟩ |
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High-Voltage SiC-JFET Fabrication and Full CharacterizationECSCRM'18, Sep 2018, Birmingham, United Kingdom. pp.TU.P_BP5 |
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Emergence of SiC Thyristors Featuring Amplifying Gate DesignInternational Conference on Silicon Carbide and Related Materials, Sep 2017, Washington DC, United States |
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Near breakdown voltage optical beam induced current (OBIC) on 4H-SiC bipolar diodeInternational Conference on Silicon Carbide and Related Materials 2017 (ICSCRM 2017), Sep 2017, Washington, United States. pp.TH.DP.4 |
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Technology Route towards SiC Thyristor Devices with Amplifying Gate DesignCompound Semiconductor Week 2017, May 2017, Berlin, Germany |
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Surge driven evolution of Schottky barrier height on 4H-SiC JBS diodesInternational Conference on Silicon Carbide and Related Materials 2017 (ICSCRM 2017), Sep 2017, Washington DC, United States |
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Very High Sustainable Forward Current Densities on 4H-SiC P+N- Junctions formed by localized VLS P+ epitaxyECSCRM'16, Sep 2016, Halkidiki, Greece |
OBIC Technique Applied to Wide Bandgap Semiconductors40th WOCSDICE ‐ Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe & 13th EXMATEC ‐ Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, Jun 2016, Aveiro, Portugal |
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Realization and characterization of carbonic layers on 4H-SiC for electrochemical detectionsECSCRM'16, Sep 2016, Halkidiki, Greece. pp.WeP-52 |
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Étude en simulation et conception d'un transistor bipolaire (BJT) 10 kV en 4H-SiCSymposium de Génie Electrique (SGE'16), Jun 2016, Grenoble, France |
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Simulation-based Study on the Optical Beam Intensity Dependence of the Optically Triggered 4H-SiC Thyristors Turn-on OperationInternational Conference on Solid State Devices and Materials 2016, Sep 2016, Tsukuba International Congress Center Tsukuba, Japan. ⟨10.7567/SSDM.2016.PS-14-17L⟩ |
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Precise Automated Semiconductor Characterization under Ambient Control for testing wide band gap semiconductorsInternational Symposium on High Voltage Engineering (ISH) 2015, Aug 2015, Pilsen, Czech Republic |
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Lifetime of holes determination in 4H-SiC using two-photon optical beam induced current methodCAS, Oct 2015, Sinaia, Romania. ⟨10.1109/SMICND.2015.7355226⟩ |
Vertical termination filled with adequate dielectric for SiC devices in HVDC applicationsInternational Conference on Silicon Carbide and Related Materials 2015 (ICSCRM 2015), Oct 2015, Giardini Naxos, Italy |
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Study and optimization of a 600V Pseudo-vertical GaN-on-silicon rectifier by finite elements simulationICSCRM 2015, Oct 2015, Giardini Naxos, Italy. pp.Mo-P-44 |
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Temperature Dependence of 4H-SiC Ionization Rates Using Optical Beam Induced CurrentECSCRM'14, Sep 2014, Grenoble, France. pp.MO2-IP-08 |
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Thermally stable ohmic contact to p-type 4H-SiC based on Ti3SiC2 phaseICSCRM, Oct 2015, Giardini Naxos, Italy |
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4H-SiC P-N junctions realized by VLS for JFET lateral structuresECSCRM'14, Sep 2014, Grenoble, France. pp.TU-P-61 |
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4H-SiC VJFETs with Self-Aligned ContactsECSCRM'14, Sep 2014, Grenoble, France. pp.WE-P-75 |
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Determination of 4H-SiC ionization rates using OBIC based on two-photon absorptionInternational Conference on Silicon Carbide and Related Materials 2015 (ICSCRM 2015), Oct 2015, Giardini Naxos, Italy |
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Localized VLS Epitaxy Process as a P-type Doping Alternative Technique for 4H-SiC P/N JunctionsSemiconductor Interface Specialists Conference (SISC 2015), Dec 2015, Arlington, United States |
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Classic and alternative methods of p-type doping 4H-SiC for integrated lateral devicesCAS, Oct 2015, Sinaia, Romania. pp.145 - 148, ⟨10.1109/SMICND.2015.7355190⟩ |
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Conception de thyristors SiC permettant l'étude de l'amplification interne de l'allumageSymposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France |
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Imagerie 2D du champ électrique dans les diodes SiC-4H haute tension par la technique OBICSymposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France |
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On the chemistry of epitaxial Ti3SiC2 formation on 4H-SiC using Al-Ti annealingECSCRM'14, Sep 2014, Grenoble, France. pp.TU-P-63 |
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Optimisation de la terminaison d'une diode Schottky diamant haute tensionSymposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France |
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Etude de différents transistors de puissance SiC 1.2kV des températures cryogéniques aux hautes températuresSymposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France |
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Les réseaux HVDC multi-terminaux : des défis multiples en génie électrique1er Symposium de Génie Électrique (SGE 2014), Jul 2014, Cachan, France |
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Characterization and comparison of 1.2 kV SiC power devices from cryogenic to high temperatureECSCRM'14, Sep 2014, Grenoble, France |
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Wide bandgap semiconductors for ultra high voltage devices. Design and characterization aspectsCAS, Oct 2014, Sinaia, Romania. pp.35 - 40, ⟨10.1109/SMICND.2014.6966383⟩ |
Two-dimensional Optical Beam Induced Current measurements in 4H-SiC bipolar diodes2014 IEEE PRIME, Jun 2014, Grenoble, France. ⟨10.1109/PRIME.2014.6872761⟩ |
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Nouveaux contacts électriques sur SiC-4H de type p : réalisation de phases MAXSymposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France |
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Influence of process parameters on electrical properties of PiN diodes fabricated with a highly p-type doped layer selectively grown by VLS transportInternational Conference on Silicon Carbide and Related Materials ICSCRM 2013, Sep 2013, Miyazaki, Japan |
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Study of the Nucleation of p-doped SiC in Selective Epitaxial Growth using VLS TransportECSCRM 2012, Sep 2012, Saint-Pétersbourg, Russia. 4p |
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Pulse Current Characterization of SiC GTO Thyristors with Etched JTEEuropean Conference on Silicon Carbide and Related Materials (ECSCRM 2012), Sep 2012, Saint-Petersbourg, Russia. pp.986-989, ⟨10.4028/www.scientific.net/MSF.740-742.986⟩ |
p-type SiC growth on diamond substrate by VLS TransportECSCRM 2012, Sep 2012, Saint-Pétersbourg, Russia. 2p |
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SiC power devices operation from cryogenic to high temperature: investigation of various 1.2kV SiC power devicesInternational Conference on Silicon Carbide and Related Materials (ICSCRM) 2013, Sep 2013, Miyazaki, Japan. pp.1122-1125, ⟨10.4028/www.scientific.net/MSF.778-780.1122⟩ |
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Experimental Investigation of Electro-thermal Stress Impact on SiC-BJTs Electrical CharacteristicsHiTEN'13, Jul 2013, Oxford, United Kingdom |
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Impact of design on electrical characteristics of 3.5 kV 4H-SiC JBS diodeInternational Silicon Carbide Hetero-Epitaxy HeteroSiC and Workshop on Advanced Semiconductor Materials and devices for Power Electronics WASMPE, Jun 2013, Nice, France |
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High temperature, Smart Power Module for aircraft actuatorsHiTEN'13, Jul 2013, Oxford, United Kingdom |
3D TCAD Simulations for More Efficient SiC Power Devices DesignElectro Chemical Society 224th meeting, Oct 2013, San Francisco, United States. ⟨10.1149/05804.0331ecst⟩ |
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Electrical characteristics of SiC UV-Photodetector device : from the p-i-n structure behaviour to the Junction Barrier Schottky structure behaviourHeteroSiC & WASMPE 2011, Jun 2011, Tours, France. pp.114-117, ⟨10.4028/www.scientific.net/MSF.711.114⟩ |
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Pressureless Silver Sintering Die-Attach for SiC Power DevicesCSCRM, Sep 2012, Saint-Pétersbourg, Russia. 2p |
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Electrical characterization of PiN diodes fabricated on a p layer selectively grown by VLS transportProceedings of the 2012 European Conference on Silicon Carbide and Related Materials ECSCRM, Sep 2012, Saint-Pétersbourg, Russia. 4p |
Electrical characteristics (I-V) of field plate protected vertical diamond Schottky diodesInternational Conference on Diamond and Carbon Materials Granada, SPAIN, 2012, Granada, Spain |
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Design of an integrated power converter in Wide Band Gap for harsh environmentsConference on Integrated Power Electronics systems, Mar 2012, Nuremberg, Germany |
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Thyristors GTO haute tension en carbure de silicium avec terminaison JTE gravéeElectronique de Puissance du Futur 2012, Jul 2012, Bordeaux, France |
Using a two step plasma etching process for diamond power devicesInternational Conference on Diamond and Carbon Materials Granada, SPAIN, 2012, Granada, Spain |
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Protections périphériques des composants 1200 V14ème EPF, Jul 2012, Bordeaux, France. 4 p |
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A path toward high voltage devices : 3.3 kV 4H-SiC JBS and JFETHETECH, Nov 2012, Barcelone, France |
4H-SiC P +N UV photodiodes: A comparison between beam and plasma doping processesCSCRM, Sep 2011, Cleveland, United States |
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Protections périphériques de diodes bipolaires 10 kV en SiC-4H14ème Conférence Electronique de Puissance du Futur (EPF 2012), Jul 2012, Bordeaux, France |
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Investigations on Ni-Ti-Al ohmic contacts obtained on p-type 4H-SiCHeteroSiC & WASMPE 2011, Jun 2011, Tours, France. pp.169-173, ⟨10.4028/www.scientific.net/MSF.711.169⟩ |
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Evaluation of silver-sintering die attach7th CIPS, Mar 2012, Nuremberg, Germany. pp.237-243 |
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Towards Very High Voltage SiC Power DevicesPRiME 2012-ECS, Oct 2012, Honolulu-Hawaii, United States. ⟨10.1149/05003.0425ecst⟩ |
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Report de puce par frittage d'argent - mise en oeuvre et analyse14ème EPF, Jul 2012, Bordeaux, France. pp.CD (ref 61) |
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Diode PiN 6500V en SiC-4H14ème EPF, Jul 2012, Bordeaux, France. 4 p |
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SIMS analyses applied to open an optical window in 4H-SiC devices for electro-optical measurementsICSCRM, Sep 2011, Cleveland, United States |
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Edge termination design improvements for 10 kV 4H-SiC bipolar diodesSilicon Carbide and Related Materials 2012, Sep 2012, Saint-Pétersbourg, Russia |
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Design and characterization of a novel 3.3 kV 4H-SiC JFETProceedings of the 2012 European Conference on Silicon Carbide and Related Materials ECSCRM, Sep 2012, Saint-Pétersbourg, Russia. 4p |
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600 V PiN diodes fabricated using on-axis 4H silicon carbideInternational Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), Sep 2011, Cleveland, United States. pp.969-972, ⟨10.4028/www.scientific.net/MSF.717-720.969⟩ |
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Réalisation et caractérisation de diodes Schottky en diamant monocristallin protégées par plaque de champ sur Si3N414ème EPF, Jul 2012, Bordeaux, France. 4 p |
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PASChAC, système automatisé de caractérisation de composants sur waferElectronique de Puissance du Futur 2012, Jul 2012, Bordeaux, France |
OBIC measurements on avalanche diodes in 4H-SiC for the determination of impact ionization coefficientsCSCRM, Sep 2011, Cleveland, United States |
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Réalisation de contact ohmique sur SiC-4H type PJNRDM2011, May 2011, Paris, France |
Avalanche Diodes with Low Temperature Dependence in 4H-SiC Suitable for Parallel ProtectionCSCRM, Aug 2010, Oslo, Norway |
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Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature ApplicationsCIMA, Mar 2011, Beyrouth, Lebanon. pp.CD |
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Pulse characterization of optically triggered SiC thyristorsInternational Conference on Silicon Carbide and Related Materials 2011 (ICSCRM'2011), Philipp Neudeck, Sep 2011, Cleveland, United States. pp.FR-1A-3 |
Parallel and serial association of SiC light triggered thyristorsHeteroSiC & WASMPE 2011, Jun 2011, Tours, France |
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Influence of the Masking Material and Geometry on the 4H-SiC RIE Etched Surface StateCSCRM, Aug 2010, Oslo, Norway. pp.477-480, ⟨10.4028/www.scientific.net/MSF.679-680.477⟩ |
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Influence of P+ layer parameters on 4H-SiC UV PiN photodetector characteristicsWOCSDICE, May 2011, Catania, Italy. pp.181 |
Perspectives on SiC and III-N Based Devices for Power Electronics220th ECS Meeting, The Electrochemical Society, Oct 2011, Boston, United States. pp.139-152, ⟨10.1149/1.3631492⟩ |
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Réalisation de Diodes SiC Simples pour l'Etude de Passivations13ème EPF, Jun 2010, Saint-Nazaire, France |
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A Step Toward High Temperature Intelligent Power Modules Using 1.5kV SiC-BJTCSCRM, Oct 2009, Nuremberg, Germany. pp.1155-1158, ⟨10.4028/www.scientific.net/MSF.645-648.1155⟩ |
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Protection périphérique pour composants de puissance en diamant13ème EPF, Jun 2010, Saint-Nazaire, France. 4p |
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Optical triggering of 4H-SiC thyristors with a 365 nm UV LEDEuropean Conference on Silicon Carbide and Related Materials ECSCRM-2010, Aug 2010, Oslo (Norway), Norway. ⟨10.4028/www.scientific.net/MSF.679-680.690⟩ |
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Investigation of Epitaxial SiC PiN Diodes with Variable Mesa HeightEuropean Conference on Silicon Carbide and Related Materials ECSCRM-2010, Aug 2010, Oslo (Norway), Norway |
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Graded Etched Junction Termination for SiC ThyristorsEuropean Conference on Silicon Carbide and Related Materials (ECSCRM 2010), Aug 2010, Oslo, Norway |
SiC BJT driver applied to a 2 kW inverter: Performances and limitations6th CIPS, Mar 2010, Nuremberg, Germany |
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Simulation and design of junction termination structures for diamond Schottky diodesEuropean Conference on Diamond Diamond-like Materials Carbon Nanotubes and Nitrides (DIAMOND 2010), Sep 2010, Budapest, Hungary |
Conception d'une protection périphérique originale pour composants bipolaires en carbure de silicium (SiC)13ème EPF, Jun 2010, Saint-Nazaire, France |
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Chambre à Vide de Caractérisation Haute Tension de Composants Semiconducteurs Nus13ème EPF, Jun 2010, Saint-Nazaire, France |
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State of the art of High Temperature Power ElectronicsMicrotherm, Jun 2009, Lodz, Poland. pp.8-17 |
Temperature Dependence lifetime measurements on 3.3kV 4H-SiC PiN Diodes using OCVD TechniqueECSCRM European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelone, Spain. pp.703-706, ⟨10.4028/www.scientific.net/MSF.615-617.703⟩ |
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Current limiting with SiC JFET structures5th CIPS, Mar 2008, Nuremberg, Germany. pp.08.5 |
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Characterization of 4H-SiC junction barrier Schottky diodes by admittance vs. temperature analysesEuropean Conference on Silicon Carbide and Related Materials ECSCRM 2008, Sep 2008, Barcelone, Spain |
Normally-on devices and circuits, SiC and high temperature : using SiCJFETs in power converters5th CIPS, Mar 2008, Nuremberg, Germany. pp.08.2 |
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SiC Power Semiconductor Devices for new Applications in Power Electronics13th IEEE PEMC, Sep 2008, Poznan, Poland. pp.2457 - 2463, ⟨10.1109/EPEPEMC.2008.4635632⟩ |
Modeling and high temperature characterization of SiC-JFETIEEE PESC, Jun 2008, Rhodes, Greece. pp.3111 - 3117, ⟨10.1109/PESC.2008.4592430⟩ |
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Composant de protection série en SiC 450A de forte densité de puissance12ème colloque Electronique de Puissance du Futur, Jul 2008, Tours, France |
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Protection périphérique d’une diode bipolaire SiC-4H. Simulation électrique de JTE à dopage variable12ème colloque Electronique de Puissance du Futur, Jul 2008, Tours, France |
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Contact ohmique de faible résistivité sur SiC-4H dopé type-P4eme colloque sur les Matériaux du Génie Electrique, May 2008, Toulouse, France |
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Prospective sur les composants de puissance verticaux grand gap (Carbure de Silicium et Diamant) et leurs applications12e EPF (Electronique de Puissance du Futur), Jul 2008, Tours, France |
SiC JFET for high temperature power switches5th CIPS, Mar 2008, Nuremberg, Germany. pp.08.4 |
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Use of Graphite Cap to Reduce Unwanted Post-Implantation Annealing Effects in SiCCSCRM, Sep 2006, Newcastle upon Tyne, United Kingdom. pp.611-614, ⟨10.4028/www.scientific.net/MSF.556-557.611⟩ |
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Comparison of electrical properties of ohmic contact realized on p-type 4H-SiCICSCRM'2007, Oct 2007, Otsu, Japan |
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New Applications in Power Electronics Based on SiC Power DevicesICSCRM'2007, Oct 2007, Otsu, Japan. pp.925-930, ⟨10.4028/www.scientific.net/MSF.600-603.925⟩ |
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Determination of ambipolar lifetime and epilayer thickness of 5 kV SiC bipolar devices by switching transient studiesICSCRM'2007, Oct 2007, Otsu, Japan. pp.1031-1034, ⟨10.4028/www.scientific.net/MSF.600-603.1031⟩ |
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Diode PiN SiC-4H 1,2kV sur épi-wafer SiCrystal11ème colloque Electronique de Puissance du Futur, Jul 2006, Grenoble, France |
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High temperature operating converter4th CIPS, Jun 2006, Naples, Italy. pp.201-204 |
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Towards an integrated inverter based on lateral JFET SiC4th CIPS, Jun 2006, Naples, Italy. pp.171-176 |
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Deep SiC etching with RIEE-MRS 2006, May 2006, Nice, France. pp.3886392 |
Current sensing for SiC Power DevicesCSCRM, Sep 2005, Pittsburgh, PA, United States. pp.1215-1218 |
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Étude de cascodes SiC en vue d’applications électroniques impulsionnelles11ème colloque Electronique de Puissance du Futur, Jul 2006, Grenoble, France |
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Ni-Al Ohmic contact to p-type 4H-SiC2006 Spring Meeting of the European Materials Research Society (E-MRS 2006), May 2006, Nice, France. ⟨10.1016/j.spmi.2006.08.004⟩ |
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Optimisation de la structure double RESURF d’un transistor JFET latéral SiC-4H pour le développement de convertisseurs de puissance intégrés11ème colloque Electronique de Puissance du Futur, Jul 2006, Grenoble, France |
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Onduleur à JFET sans diode de roue libre externe11ème colloque Electronique de Puissance du Futur, Jul 2006, Grenoble, France |
300 °C operating junction temperature inverter leg investigationsEPE, Sep 2005, Dresden, Germany |
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Gravure RIE profonde du SiC pour la réalisation de composants de puissance3eme colloque sur les Matériaux du Génie Electrique, Dec 2005, Lyon, France |
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SiC-based current limiter devicesInternational Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France. pp.951-956, ⟨10.4028/www.scientific.net/MSF.457-460.951⟩ |
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Silicon Carbide Controlled Current Limiter, Current Limitation Strategies, Foreseen Applications and BenefitsInternational Power Electronics and Motion Control (IPEMC'04), Aug 2004, Xi'an, China |
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HIGH VOLTAGE AND SPECIFIC POWER SILICON CARBIDE DEVICES10ème colloque Electronique de Puissance du Futur, Sep 2004, Toulouse, France |
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P-type SiC layers formed by VLS induced selective epitaxial growthEuropean Conference on Silion Carbide and Related Materials (ECSCRM 2004), Sep 2004, Bologne, Italy |
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Conception d'un transistor JFET 5 kV en SiC-4H10ème colloque Electronique de Puissance du Futur, Sep 2004, Toulouse, France |
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A 3.5 kV thyristor in 4H-SiC with a JTE peripheryEuropean Conference on Silion Carbide and Related Materials (ECSCRM 2004), Sep 2004, Bologne, Italy |
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Active clamping of IGBT: capacitor replaces TRANSIL diodes10th European Conference on Power Electronics and Applications (EPE'2003), Sep 2003, Toulouse, France |
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Design, fabrication and characterisation of 5 kV 4H-SiC p + n planar bipolar diodes protected by junction termination extensionInternational Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France |
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The role of the ion implanted emitter state on 6H-SiC power diodes behaviour. A statistical study.International Conference on Silicon Carbide and Related Materials (ICSCRM 2003), Oct 2003, Lyon, France |
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Influence of different peripheral protections on the breakover voltage of a 4H-SiC GTO thyristorInternational Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France |
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Electrothermal simulations of silicon carbide current limiting devices2003 IEEE International Conference on Industrial Technology, Dec 2003, Maribor, Slovenia. pp.1135-1140, ⟨10.1109/ICIT.2003.1290823⟩ |
On chip temperature monitoring of a SiC current limiterInternational Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France |
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Silicon Carbide specific components for power electronics system protectionInternational Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France |
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Current limitation with SiC devices10th European Conference on Power Electronics and Applications (EPE'2003), Sep 2003, Toulouse, France |
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Design and simulation of a planar anode GTO thyristor on SiCCAS (International Semiconductor Conference), Sep 2003, Sinaia, Romania. pp.222, ⟨10.1109/SMICND.2003.1252421⟩ |
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Study of suitable dielectric material properties for high electric field and high temperature power semiconductor environment10th European Conference on Power Electronics and Applications (EPE'2003), Sep 2003, Toulouse, France |
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Towards the Fabrication and Measurement of High Sensitivity SiC-UV Detectors with Oxide Ramp TerminationInternational Conference on Silicon Carbide and Related Materials (ICSCRM 2003), Oct 2003, Lyon, France |
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Substrat SiCOI : Avancées vers les applications « System on Chip »EPF2002 - Colloque 2002, Electronique de Puissance du Futur, Nov 2002, Montpellier, France |
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Contact resistivity of Al/Ti ohmic contacts on p-type ion implanted 4H and 6H-SiC2002 MRS Fall Meeting, Dec 2002, Boston, United States. ⟨10.1557/PROC-742-K6.2⟩ |
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Very low R/sub ON/ measured on 4H-SiC accu-MOSFET high power device14th International Symposium on Power Semiconductor Devices and ICs, Jun 2002, Sante Fe, United States. pp.209-212, ⟨10.1109/ISPSD.2002.1016208⟩ |
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OBIC measurements on 1.3 kV 6H-SiC bipolar diodes protected by Junction Lateral ExtensionEuropean Conference on Silicon Carbide and Related Materials (ECSCRM 2002), Sep 2002, Linköping, Sweden |
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COMPOSANT NνN POUR L'ETUDE DE LA ZCEM (ZONE DE CHARGE D'ESPACE MIXTE) DES TRANSISTORS MOSElectronique de Puissance du Futur (EPF 2002), Nov 2002, Montpellier (FR), France |
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A New Process for the Fabrication of SiC Power Devices and Systems on SiCOI (Silicon Carbide On Insulator) Substrates2002 MRS Fall Meeting, Dec 2002, Boston, United States. ⟨10.1557/PROC-742-K7.9⟩ |
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A 4H-SiC high-power-density VJFET as controlled current limiterIndustry Applications Society (IAS'02), Oct 2002, Pittsburgh (Pennsylvania), United States. pp.2248-2251 |
Characterization of a 4H-SiC High Power Density Controlled Current LimiterEuropean Conference on Silicon Carbide and Related Materials (ECSCRM 2002), Sep 2002, Linköping, Sweden |
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Limiteur de courant à forte densité de puissance en carbure de siliciumElectronique de Puissance du Futur (EPF 2002), Nov 2002, Montpellier (FR), France |
SiC On Insulator as substrate for power Schottky diodesEuropean Conference on Silicon Carbide and Related Materials (ECSCRM 2002), Sep 2002, Linköping, Sweden |
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Fabrication and Characterisation of High Voltage SiC-ThyristorsEuropean Conference on Silicon Carbide and Related Materials (ECSCRM 2002), Sep 2002, Linköping, Sweden |
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Simulation study of a new current limiting device : a vertical alpha-SiC etched JFET - Controlled Current LimiterICSCRM, Oct 2001, Tsukuba, Japan |
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Study based on the numerical simulation of a 5 kV asymmetrical 4H-SiC thyristor for high power pulses applicationCAS 2001 International Semiconductor Conference, Oct 2001, Sinaia, Romania. pp.341-344, ⟨10.1109/SMICND.2001.967479⟩ |
Study of 6H-SiC high voltage bipolar diodes under reverse biasesEuropean Materials Research Society (E-MRS Spring Meeting) 2001, Jun 2001, Strasbourg, France |
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Realization of a High Current and Low RON 600V Current Limiting DeviceInternational Conference on Silicon Carbide and Related Materials, Oct 2001, Tsukuba, Japan |
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4H-SiC bipolar power diodes realized by ion implantationCAS 2001 International Semiconductor Conference, Oct 2001, Sinaia, Romania. pp.349-352, ⟨10.1109/SMICND.2001.967481⟩ |
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A comparative study of high temperature Aluminium post-implantation annealing in 6H and 4H-SiC, non-uniformity temperature effectsICSCRM, Oct 2001, Tsukuba, Japan |
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Compatibility of VJFET Technology with MESFET Fabrication and Its Interest for System Integration: Fabrication of 6H and 4H-SiC 110 V Lateral MESFETICSCRM, Oct 2001, Tsukuba, Japan |
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Study of 4H-SiC high voltage bipolar diodes under reverse biases using electrical and Obic characterizationICSCRM, Oct 2001, Tsukuba, Japan |
Bipolar silicon carbide power diodes realized by aluminum implantations and high temperature rf-annealing43rd Electronic Materials Conference (EMC 2001), Jun 2001, Notre Dame, IN, United States |
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Experimental characterization of a 4H-SiC high voltage current limiting deviceEuropean Materials Society (E-MRS Spring Meeting) 2001, symposium F, Jun 2001, Strasbourg, France |
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Electrical and electrothermal 2D simulations of a 4H-SiC high voltage current limiting device for serial protection applications3rd International Conference on Power Electronics and Motion Control, Aug 2000, Beijing, China. pp.396-401, ⟨10.1109/IPEMC.2000.885436⟩ |
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Electrical and electrothermal 2D simulations of a 4H-SiC high voltage current limiting device for serial protection applications12th International Symposium on Power Semiconductor Devices & ICs. Proceedings, May 2000, Toulouse, France. pp.287-290, ⟨10.1109/ISPSD.2000.856827⟩ |
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High Electrical Activation of Aluminium and Nitrogen Implanted in 6H-SiC at Room Temperature by RF AnnealingEuropean Conference on Silicon Carbide and Related Materials 2000 (ECSCRM 2000), Sep 2000, Kloster Banz, Germany. pp.MoP-72 |
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Evaluation of losses in a switching cell using the finite element method. Comparison between silicon and silicon carbide components3rd International Conference on Power Electronics and Motion Control, Aug 2000, Beijing, China. pp.241-245, ⟨10.1109/IPEMC.2000.885364⟩ |
Silicon carbide power devices1998 International Semiconductor Conference. CAS'98 Proceedings, Oct 1998, Sinaia, Romania. pp.125-134, ⟨10.1109/SMICND.1998.732305⟩ |
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The negative temperature coefficient of the breakdown voltage of SiC p-n structures and deep centers in SiCInternational Conference on Silicon Carbide and Related Materials ICSCRM'95, Sep 1995, Kyoto, Japan |
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A SIMULATION SYSTEM FOR A POWER INSULATED GATE BIPOLAR TRANSISTOR (IGBT) WITH TSUPREM-4 AND MEDICI SIMULATORS7th European Simulation Symposium (ESS-1995), Oct 1995, Erlangen-Nuremberg, Germany |
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Study of Silicon Carbide high voltage ability: experimental results on expitaxial-emitter and implanted-emitter diodesInternational Seminar on Silicon Carbide Semiconductor and SiC-based devices, Sep 1995, Novgorod, Russia |
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Characterization of β-Ga2O3 and device fabricationSociété Française de Physique, Jun 2025, Troyes, France |
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Carrier density analysis in stressed n-doped GaN on sapphire layersGaN Marathon 2024, Jun 2024, Verona, Italy. 2024 |
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Realization and characterization of vertical PIN diode on 100 diamond33rd International Conference on Diamond and Carbon Materials, Sep 2023, Palma, Spain. , 2023 |
Optical Beam Induced Current Measurements: principles and applications to SiC device characterisationPeter Friedrichs, Tsunenobu Kimoto, Lothar Ley, Gerhard Pensl. Silicon Carbide: Volume 1: Growth, Defects, and Novel Applications, Wiley, 319-340 (chapitre 12), 2009 |
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Silicon carbide applications in power electronicsRobert Perret. Power Electronics Semiconductor Devices, Wiley-ISTE, pp.185-265, 2009 |
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Applications du carbure de silicium en électronique de puissanceRobert Perret. Mise en oeuvre des composants électroniques de puissance, HERMES, pp.243-324, 2003 |
CREATION D’UNE FENETRE DE SORTIE DE RAYONNEMENT POUR UN COMPOSANT PHOTOEMETTEURFrance, N° de brevet: FR2201067. 2022 |
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FABRICATION D’UN COMPOSANT EMETTEUR DE RAYONNEMENT A PARTIR D’UN SUBSTRAT DE CARBURE DE SILICIUMFrance, N° de brevet: FR2201064. 2022 |