Dominique Planson

373
Documents

Présentation

M. Dominique Planson

Téléphone : 04 72 43 87 24

Ingénieur INSA-GE, option Micro-électronique (91), DEA-DEI (91), Docteur INSA (1994)

Publications

Publications

Image document

Advanced characterization of SiC devices by optical beam induced current (OBIC): Experimental and simulation results

Dominique Planson , Dominique Tournier , Camille Sonneville , Pascal Bevilacqua , Luong Viet Phung et al.
Materials Science in Semiconductor Processing, 2024, 178, pp.108444. ⟨10.1016/j.mssp.2024.108444⟩
Article dans une revue hal-04664143 v1
Image document

Visualization of P+ JTE embedded rings used for peripheral protection of high voltage Schottky diodes by the Optical Beam Induced Current (OBIC) technique

Dominique Planson , Dominique Tournier , Pascal Bevilacqua , Camille Sonneville , Pierre Brosselard et al.
Solid State Phenomena, 2024, 360, pp.119-125. ⟨10.4028/p-d65YuN⟩
Article dans une revue hal-04677706 v1
Image document

Concept and technology for full monolithic MOSFET and JBS vertical integration in multi-terminal 4H-SiC power converters

Ralph Makhoul , Nour Beydoun , Abdelhakim Bourennane , Luong Viet Phung , Frédéric Richardeau et al.
Solid State Phenomena, 2024, 358, pp.23-30. ⟨10.4028/p-pzTJ4o⟩
Article dans une revue hal-04697223 v1
Image document

Design and Characterization of an Optical 4H-SiC Bipolar Junction Transistor

Pierre Brosselard , Dominique Planson , Dominique Tournier , Pascal Bevilacqua , Camille Sonneville et al.
Solid State Phenomena, 2024, 360, pp.127-131. ⟨10.4028/p-sj87Lx⟩
Article dans une revue hal-04677726 v1
Image document

A Novel Isolation Approach for GaN-Based Power Integrated Devices

Zahraa Zaidan , Nedal Al Taradeh , Mohammed Benjelloun , Christophe Rodriguez , Ali Soltani et al.
Micromachines, 2024, 15 (10), pp.1223. ⟨10.3390/mi15101223⟩
Article dans une revue hal-04850893 v1
Image document

Electrically active traps in 4H-silicon carbide (4H-SiC) PiN power diodes

P. Vigneshwara Raja , Christophe Raynaud , Besar Asllani , Hervé Morel , Dominique Planson
Journal of Materials Science: Materials in Electronics, 2023, 34 (17), pp.1383. ⟨10.1007/s10854-023-10813-z⟩
Article dans une revue hal-04199489 v1
Image document

Micro-Raman Spectroscopy Study of Vertical GaN Schottky Diode

Atse Julien Eric N’dohi , Camille Sonneville , Soufiane Saidi , Thi Huong Ngo , Philippe de Mierry et al.
Crystals, 2023, 13 (5), pp.713. ⟨10.3390/cryst13050713⟩
Article dans une revue hal-04099071 v1
Image document

First results on 1.2 kV SiC MOSFET body diode robustness tests

Hassan Hamad , Dominique Tournier , Jean-Michel Reynes , Olivier Perrotin , David Trémouilles et al.
Microelectronics Reliability, 2023, 151, pp.115264. ⟨10.1016/j.microrel.2023.115264⟩
Article dans une revue hal-04282544 v1
Image document

Electrical Behavior of Vertical Pt/Au Schottky Diodes on GaN Homoepitaxy

Maroun Dagher , Camille Sonneville , Georges Bremond , Dominique Planson , Eric Frayssinet et al.
Physica Status Solidi A (applications and materials science), 2023, ⟨10.1002/pssa.202200841⟩
Article dans une revue (article de synthèse) hal-04111725 v1
Image document

Threshold Voltage Measurement Protocol “Triple Sense” Applied to GaN HEMTs

Tamiris Grossl Bade , Hassan Hamad , Adrien Lambert , Hervé Morel , Dominique Planson
Electronics, 2023, 12 (11), pp.2529. ⟨10.3390/electronics12112529⟩
Article dans une revue hal-04121028 v1
Image document

Design, Fabrication and Characterization of 10 kV 4H-SiC BJT for the Phototransistor Target

Ali Ammar , Mihai Lazar , Bertrand Vergne , Sigo Scharnholz , Luong Viêt Phung et al.
Romanian Journal of Information Science and Technology, 2023, 26 (2), pp.193-204. ⟨10.59277/ROMJIST.2023.2.06⟩
Article dans une revue hal-04276812 v1
Image document

Edge terminations for 4H-SiC power devices: a critical issue

Philippe Godignon , Josep Montserrat , José Rebollo , Dominique Planson
Materials Science Forum, 2022, 1062, pp.570-575. ⟨10.4028/p-lom714⟩
Article dans une revue hal-03694757 v1
Image document

Capacitance temperature dependence analysis of GaN-on-Si power transistors

Florian Rigaud-Minet , Julien Buckley , William Vandendaele , Matthew Charles , Marie-Anne Jaud et al.
Energies, 2022, 15 (19), pp.7062. ⟨10.3390/en15197062⟩
Article dans une revue cea-03874112 v1
Image document

Deep Level Transient Fourier Spectroscopy (DLTFS) and Isothermal Transient Spectroscopy (ITS) in vertical GaN-on-GaN Schottky barrier diodes

P. Vigneshwara Raja , Christophe Raynaud , Camille Sonneville , Hervé Morel , Luong Viet Phung et al.
Micro and Nanostructures, 2022, 172, pp.207433. ⟨10.1016/j.micrna.2022.207433⟩
Article dans une revue hal-04032160 v1
Image document

Investigation of SiC thyristors with varying amplifying gate design

Sigo Scharnholz , Ralf Hassdorf , Dirk Bauersfeld , Bertrand Vergne , Luong Viêt Phung et al.
Materials Science Forum, 2022, 1062, pp.493-497. ⟨10.4028/p-ztr5d7⟩
Article dans une revue hal-03702384 v1
Image document

Enhanced Resonant Raman Scattering of GaN Functional Layers Using Al Thin Films - A Versatile Tool for Multilayer Structure Analysis

Alina Muravitskaya , Anna Rumyantseva , Atse Julien Eric N’dohi , Camille Sonneville , Dominique Planson et al.
Materials Science Forum, 2022, 1062, pp.293-297. ⟨10.4028/p-5p0qg2⟩
Article dans une revue hal-03702821 v1
Image document

Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes

P. Vigneshwara Raja , Christophe Raynaud , Camille Sonneville , Atse Julien Eric N’dohi , Hervé Morel et al.
Microelectronics Journal, 2022, 128, pp.105575. ⟨10.1016/j.mejo.2022.105575⟩
Article dans une revue hal-03826217 v1
Image document

4H-SiC PiN diode protected by narrow field rings investigated by the micro-OBIC method

Dominique Planson , Camille Sonneville , Pascal Bevilacqua , Luong Viêt V Phung , Besar Asllani et al.
Materials Science Forum, 2022, 1062, pp.341-345. ⟨10.4028/p-2ch22f⟩
Article dans une revue hal-03689424 v1
Image document

Interest of using a micro-meter spatial resolution to study SiC semi-conductor devices by Optical Beam Induced Current (OBIC)

Camille Sonneville , Dominique Planson , Luong Viêt Phung , Pascal Bevilacqua , Besar Asllani
Materials Science Forum, 2020, 1004, pp.290. ⟨10.4028/www.scientific.net/MSF.1004.290⟩
Article dans une revue hal-02925178 v1
Image document

Static and switching characteristics of 10 kV-class Silicon Carbide Bipolar Junction Transistors and Darlingtons

Besar Asllani , Pascal Bevilacqua , Hervé Morel , Dominique Planson , Luong Viet Phung et al.
Materials Science Forum, 2020, 1004, pp.923-932. ⟨10.4028/www.scientific.net/MSF.1004.923⟩
Article dans une revue hal-02931290 v1
Image document

Subthreshold Drain current hysteresis of planar SiC MOSFETs

Besar Asllani , Alberto Castellazzi , Dominique Planson , Hervé Morel
Materials Science Forum, 2019, 963, pp.184-188. ⟨10.4028/www.scientific.net/MSF.963.184⟩
Article dans une revue hal-02060341 v1
Image document

Experimental and simulation results of optical beam induced current technique applied to wide bandgap semiconductors

Dominique Planson , Besar Asllani , Luong-Viet Phung , Pascal Bevilacqua , Hassan Hamad et al.
Materials Science in Semiconductor Processing, 2019, 94, pp.116-127. ⟨10.1016/j.mssp.2019.01.042⟩
Article dans une revue hal-02053053 v1
Image document

Multi-barrier height characterization and DLTS study on Ti/W 4H-SiC Schottky Diode

Teng Zhang , Christophe Raynaud , Dominique Planson
Materials Science Forum, 2019, 963, pp.576-579. ⟨10.4028/www.scientific.net/MSF.963.576⟩
Article dans une revue hal-02436812 v1
Image document

Advanced Electrical characterisation of high voltage 4H-SiC PiN diodes

Besar Asllani , Dominique Planson , Pascal Bevilacqua , Jean-Baptiste Fonder , Beverley Choucoutou et al.
Materials Science Forum, 2019, 963, pp.567-571. ⟨10.4028/www.scientific.net/MSF.963.567⟩
Article dans une revue hal-02060334 v1
Image document

High-Voltage SiC-JFET Fabrication and Full Characterization

Besar Asllani , Pascal Bevilacqua , Abderrahime Zaoui , Gregory Grosset , Dominique Planson et al.
Materials Science Forum, 2019, 963, pp.688-692. ⟨10.4028/www.scientific.net/MSF.963.688⟩
Article dans une revue hal-02060228 v1
Image document

10 kV Silicon Carbide PiN Diodes-From Design to Packaged Component Characterization

Besar Asllani , Hervé Morel , Luong Viêt Phung , Dominique Planson
Energies, 2019, ⟨10.3390/en12234566⟩
Article dans une revue hal-02398585 v1
Image document

Measure and analysis of 4H-SiC Schottky barrier height with Mo contacts

Teng Zhang , Christophe Raynaud , Dominique Planson
European Physical Journal: Applied Physics, 2019, 85 (1), pp.10102. ⟨10.1051/epjap/2018180282⟩
Article dans une revue hal-02047099 v1
Image document

VTH subthreshold hysteresis technology and temperature dependence in commercial 4H-SiC MOSFETs

Besar Asllani , Asad Fayyaz , Alberto Castellazzi , Hervé Morel , Dominique Planson
Microelectronics Reliability, 2018, 88-90, pp.604 - 609. ⟨10.1016/j.microrel.2018.06.047⟩
Article dans une revue hal-01889461 v1
Image document

Surge Driven Evolution of Schottky Barrier Height on 4H-SiC JBS Diodes

Besar Asllani , Jean Baptiste Fonder , Pascal Bevilacqua , Dominique Planson , Luong Viet Phung et al.
Materials Science Forum, 2018, 924, pp.593 - 596. ⟨10.4028/www.scientific.net/MSF.924.593⟩
Article dans une revue hal-01857352 v1
Image document

Silicon Carbide Technology of MESFET-Based Power Integrated Circuits

Jean-François Mogniotte , Dominique Tournier , Christophe Raynaud , Mihai Lazar , Dominique Planson et al.
IEEE Journal of Emerging and Selected Topics in Power Electronics, 2018, 6 (2), pp.539 - 548. ⟨10.1109/JESTPE.2017.2778002⟩
Article dans une revue hal-01864533 v1
Image document

Near Breakdown Voltage Optical Beam Induced Current (OBIC) on 4H-SiC Bipolar Diode

Dominique Planson , Besar Asllani , Hassan Hamad , Marie-Laure Locatelli , R Arvinte et al.
Materials Science Forum, 2018, Silicon Carbide and Related Materials 2017, 924, pp.577-580. ⟨10.4028/www.scientific.net/MSF.924.577⟩
Article dans une revue hal-01818806 v1
Image document

Simulation-Based Study About the Lifetime and Incident Light Properties Dependence of the Optically Triggered 4H-SiC Thyristors Operation

Junichi Hasegawa , Loris Pace , Luong Viet Phung , Mutsuko Hatano , Dominique Planson
IEEE Transactions on Electron Devices, 2017, 64 (3), pp.1203-1208. ⟨10.1109/TED.2017.2657223⟩
Article dans une revue hal-01636430 v1
Image document

OBIC Technique Applied to Wide Bandgap Semiconductors from 100 K up to 450 K

Hassan Hamad , Dominique Planson , Christophe Raynaud , Pascal Bevilacqua
Semiconductor Science and Technology, 2017, 32 (5), ⟨10.1088/1361-6641/aa641d/meta⟩
Article dans une revue hal-01865068 v1
Image document

SiC integrated circuits for smart power converter

J F Mogniotte , Mihai Lazar , Christophe Raynaud , Dominique Planson , B Allard
Romanian Journal of Information Science and Technology, 2017, 20 (4), pp.385-399
Article dans une revue hal-04277111 v1
Image document

Realization and Characterization of Carbonic Layers on 4H-SiC for Electrochemical Detections

Julien Pezard , Véronique Soulière , Mihai Lazar , Naoufel Haddour , François Buret et al.
Materials Science Forum, 2017, 897, pp.739 - 742. ⟨10.4028/www.scientific.net/MSF.897.739⟩
Article dans une revue hal-01644735 v1
Image document

Very High Sustainable Forward Current Densities on 4H-SiC p-n Junctions Formed by VLS Localized Epitaxy of Heavily Al-Doped p<sup>++</sup> Emitters

Selsabil Sejil , Loïc Lalouat , Mihai Lazar , Davy Carole , Christian Brylinski et al.
Materials Science Forum, 2017, 897, pp.63 - 66. ⟨10.4028/www.scientific.net/MSF.897.63⟩
Article dans une revue hal-01648360 v1

Further optimization of VLS localized epitaxy for deeper 4H-SiC p-n junctions

Gabriel Ferro , Selsabil Sejil , Mihai Lazar , D. Carole , C. Brylinski et al.
Physica Status Solidi A (applications and materials science), 2017, 214 (4), ⟨10.1002/pssa.201600454⟩
Article dans une revue hal-01615190 v1
Image document

Optimization of VLS Growth Process for 4H-SiC P/N Junctions

Selsabil Sejil , Mihai Lazar , Frédéric Cayrel , Davy Carole , Christian Brylinski et al.
Materials Science Forum, 2016, 858, pp.205-208. ⟨10.4028/www.scientific.net/MSF.858.205⟩
Article dans une revue hal-01388031 v1
Image document

A Study on the Temperature of Ohmic Contact to p-Type SiC Based on Ti 3 SiC 2 Phase

Tony Abi-Tannous , Maher Soueidan , Gabriel Ferro , Mihai Lazar , Christophe Raynaud et al.
IEEE Transactions on Electron Devices, 2016, 63 (6), pp.2462-2468. ⟨10.1109/TED.2016.2556725⟩
Article dans une revue hal-01387992 v1
Image document

Vertical Termination Filled with Adequate Dielectric for SiC Devices in HVDC Applications

Thi Thanh Huyen Nguyen , Mihai Lazar , Jean-Louis Augé , Hervé Morel , Luong Viet Phung et al.
Materials Science Forum, 2016, 858, pp.982-985. ⟨10.4028/www.scientific.net/MSF.858.982⟩
Article dans une revue hal-01391838 v1
Image document

Thermally Stable Ohmic Contact to p-Type 4H-SiC Based on Ti<sub>3</sub>SiC<sub>2</sub> Phase

Tony Abi-Tannous , Maher Soueidan , Gabriel Ferro , Mihai Lazar , Christophe Raynaud et al.
Materials Science Forum, 2016, 858, pp.553-556. ⟨10.4028/www.scientific.net/MSF.858.553⟩
Article dans une revue hal-01388027 v1
Image document

Study and Optimization of a 600V Pseudo-Vertical GaN-on-Silicon Rectifier by Finite Element Simulations

Amira Souguir-Aouani , Nicolas Thierry-Jebali , Dominique Tournier , Arnaud Yvon , Emmanuel Collard et al.
Materials Science Forum, 2016, 858, pp.1190 - 1193. ⟨10.4028/www.scientific.net/MSF.858.1190⟩
Article dans une revue hal-01857348 v1
Image document

Determination of 4H-SiC Ionization Rates Using OBIC Based on Two-Photon Absorption

Hassan Hamad , Christophe Raynaud , Pascal Bevilacqua , Sigo Scharnholz , Bertrand Vergne et al.
Materials Science Forum, 2016, 858, pp.245 - 248. ⟨10.4028/www.scientific.net/MSF.858.245⟩
Article dans une revue hal-01388035 v1
Image document

Short-Circuit Capability Exploration of Silicon Carbide Devices

Maxime Berthou , Dominique Planson , Dominique Tournier
Materials Science Forum, 2015, 821-823, pp.810-813. ⟨10.4028/www.scientific.net/MSF.821-823.810⟩
Article dans une revue hal-02133674 v1
Image document

Characterization and Comparison of 1.2kV SiC Power Devices from Cryogenic to High Temperature

Thibaut Chailloux , Cyril Calvez , Dominique Tournier , Dominique Planson
Materials Science Forum, 2015, 821-823, pp.814-817. ⟨10.4028/www.scientific.net/MSF.821-823.814⟩
Article dans une revue hal-02116809 v1
Image document

VLS Grown 4H-SiC Buried P+ Layers for JFET Lateral Structures

Selsabil Sejil , Farah Laariedh , Mihai Lazar , Davy Carole , Christian Brylinski et al.
Materials Science Forum, 2015, 821-823, pp.789 - 792. ⟨10.4028/www.scientific.net/MSF.821-823.789⟩
Article dans une revue hal-01387983 v1
Image document

Original Field Plate to Decrease the Maximum Electric Field Peak for High-Voltage Diamond Schottky Diode

Houssam Arbess , Karine Isoird , Saleem Hamady , Moustafa Zerarka , Dominique Planson
IEEE Transactions on Electron Devices, 2015, 62 (9), pp. 2945-2951. ⟨10.1109/TED.2015.2456073⟩
Article dans une revue hal-01218835 v1
Image document

High termination efficiency using polyimide trench for high voltage diamond Schottky diode

Houssam Arbess , Karine Isoird , Moustafa Zerarka , Henri Schneider , Marie-Laure Locatelli et al.
Diamond and Related Materials, 2015, 58, pp.149-154. ⟨10.1016/j.diamond.2015.07.006⟩
Article dans une revue hal-01218796 v1

Parametric investigation of the formation of epitaxial Ti3SiC2 on 4H-SiC from Al-Ti annealing

Tony Abi-Tannous , Maher Soueidan , G. Ferro , Mihai Lazar , B. Toury et al.
Applied Surface Science, 2015, 347, pp.186 - 192. ⟨10.1016/j.apsusc.2015.04.077⟩
Article dans une revue hal-01391845 v1
Image document

2D Electric field imagery in 4H-SiC power diodes using OBIC technique

Hassan Hamad , Pascal Bevilacqua , Dominique Planson , Christophe Raynaud , Dominique Tournier et al.
European Physical Journal: Applied Physics, 2015, Electrical Engineering Symposium (SGE 2014), 72 (2), pp.20101. ⟨10.1051/epjap/2015150054⟩
Article dans une revue istex hal-01387989 v1
Image document

Temperature Dependence of 4H-SiC Ionization Rates Using Optical Beam Induced Current

Hassan Hamad , Christophe Raynaud , Pascal Bevilacqua , Sigo Scharnholz , Dominique Planson
Materials Science Forum, 2015, 821-823, pp.223 - 228. ⟨10.4028/www.scientific.net/MSF.821-823.223⟩
Article dans une revue hal-01387987 v1
Image document

4H-SiC VJFETs with Self-Aligned Contacts

Konstantinos Zekentes , Antonis Stavrinidis , George Konstantinidis , Maria Kayambaki , Konstantin Vamvoukakis et al.
Materials Science Forum, 2015, 821-823, pp.793 - 796. ⟨10.4028/www.scientific.net/MSF.821-823.793⟩
Article dans une revue hal-01391852 v1
Image document

A Study on the Chemistry of Epitaxial Ti<sub>3</sub>SiC<sub>2</sub> Formation on 4H-SiC Using Al-Ti Annealing

Tony Abi-Tannous , Maher Soueidan , Gabriel Ferro , Mihai Lazar , Berangère Toury et al.
Materials Science Forum, 2015, 821-823, pp.432-435. ⟨10.4028/www.scientific.net/MSF.821-823.432⟩
Article dans une revue hal-01391858 v1
Image document

P-Type Doping of 4H-SiC for Integrated Bipolar and Unipolar Devices

Mihai Lazar , Selsabil Sejil , L. Lalouat , Christophe Raynaud , D. Carole et al.
Romanian Journal of Information Science and Technology, 2015, 18 (4), pp.329-342
Article dans une revue hal-01626119 v1
Image document

The channeling effect of Al and N ion implantation in 4H–SiC during JFET integrated device processing

Mihai Lazar , Farah Laariedh , Pierre Cremillieu , Dominique Planson , Jean-Louis Leclercq
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2015, 365, pp.256 - 259. ⟨10.1016/j.nimb.2015.07.033⟩
Article dans une revue hal-01391844 v1
Image document

Impact of Design on Electrical Characteristics of 3.5 kV 4H-SiC JBS Diode

Pierre Brosselard , Florian Chevalier , Benjamin Proux , Nicolas Thierry-Jebali , Pascal Bevilacqua et al.
Materials Science Forum, 2015, 806, pp.117-120. ⟨10.4028/www.scientific.net/MSF.806.117⟩
Article dans une revue hal-02133670 v1
Image document

Optical beam induced current measurements based on two-photon absorption process in 4H-SiC bipolar diodes

Hassan Hamad , Christophe Raynaud , Pascal Bevilacqua , Dominique Tournier , Bertrand Vergne et al.
Applied Physics Letters, 2014, 104 (8), ⟨10.1063/1.4866581⟩
Article dans une revue hal-01387924 v1

SiC Power Devices Operation from Cryogenic to High Temperature: Investigation of Various 1.2kV SiC Power Devices

Thibaut Chailloux , Cyril Calvez , Nicolas Thierry Thierry-Jebali , Dominique Planson , Dominique Tournier
Materials Science Forum, 2014, 778-780, pp.1122 - 1125. ⟨10.4028/www.scientific.net/MSF.778-780.1122⟩
Article dans une revue hal-01628242 v1
Image document

Applications of Vapor-Liquid-Solid Selective Epitaxy of Highly p-type Doped 4H-SiC: PiN Diodes with Peripheral Protection and Improvement of Specific Contact Resistance of Ohmic Contacts

Nicolas Thierry-Jebali , Mihai Lazar , A. Vo-Ha , D. Carole , V. Soulière et al.
Materials Science Forum, 2014, Silicon Carbide and Related Materials 2013, ⟨10.4028/www.scientific.net/MSF.778-780.639⟩
Article dans une revue hal-01987147 v1

Study of the Nucleation of p-Doped SiC in Selective Epitaxial Growth Using VLS Transport

Davy Carole , Arthur Vo-Ha , Anthony Thomas , Mihai Lazar , Nicolas Thierry-Jebali et al.
Materials Science Forum, 2013, 740-742, pp.177-180. ⟨10.4028/www.scientific.net/MSF.740-742.177⟩
Article dans une revue hal-00803058 v1

Design and Characterization of a Novel Dual-Gate 3.3 Kv 4H-Sic JFET

Florian Chevalier , Pierre Brosselard , Dominique Tournier , G. Grosset , L. Dupuy et al.
Materials Science Forum, 2013, 740-742, pp.938-941. ⟨10.4028/www.scientific.net/MSF.740-742.938⟩
Article dans une revue hal-00803057 v1

Very low specific contact resistance measurements made on a highly p-type doped 4H-SiC layer selectively grown by vapor-liquid-solid transport

N. Thierry-Jebali , A. Vo-Ha , D. Carole , Mihai Lazar , Gabriel Ferro et al.
Applied Physics Letters, 2013, 102 (21), ⟨10.1063/1.4809570⟩
Article dans une revue hal-01627796 v1
Image document

Towards Very High Voltage SiC Power Devices

Dominique Planson , Pierre Brosselard , Dominique Tournier , Luong Viet Phung , Christian Brykinski
ECS Transactions, 2013, 50 (3), pp.425-436. ⟨10.1149/05003.0425ecst⟩
Article dans une revue (article de synthèse) hal-04240149 v1

3D TCAD Simulations for More Efficient SiC Power Devices Design

Luong Viet Phung , Dominique Planson , Pierre Brosselard , Dominique Tournier , C. Brylinski
ECS Transactions, 2013, 58 (4), pp.331 - 339. ⟨10.1149/05804.0331ecst⟩
Article dans une revue hal-01636483 v1

Edge Termination Design Improvements for 10 kV 4H-SiC Bipolar Diodes

Duy Minh Nguyen , Runhua Huang , Luong Viet Phung , Dominique Planson , Maxime Berthou et al.
Materials Science Forum, 2013, 740-742, pp.609 - 612. ⟨10.4028/www.scientific.net/MSF.740-742.609⟩
Article dans une revue hal-01627801 v1

p-Doped SiC Growth on Diamond Substrate by VLS Transport

Arthur Vo Ha , Davy Carole , Mihai Lazar , Dominique Tournier , François Cauwet et al.
Materials Science Forum, 2013, 740-742, pp.331 - 334. ⟨10.4028/www.scientific.net/MSF.740-742.331⟩
Article dans une revue hal-01627777 v1

Electrical Characterization of PiN Diodes with p<sup>+</sup> Layer Selectively Grown by VLS Transport

Nicolas Thierry-Jebali , Mihai Lazar , Arthur Vo Ha , Davy Carole , Véronique Soulière et al.
Materials Science Forum, 2013, 740-742, pp.911 - 914. ⟨10.4028/www.scientific.net/MSF.740-742.911⟩
Article dans une revue hal-01627792 v1
Image document

Die attach using silver sintering. Practical implementation and analysis

Amandine Masson , Wissam Sabbah , Raphaël Riva , Cyril Buttay , Stephane Azzopardi et al.
European Journal of Electrical Engineering, 2013, 16 (3-4), pp.293-305. ⟨10.3166/ejee.16.293-305⟩
Article dans une revue hal-00874465 v1

Pulse Current Characterization of SiC GTO Thyristors with Etched JTE

Sigo Scharnholz , Ralf Hassdorf , Gontran Pâques , Bertrand Vergne , Dominique Planson
Materials Science Forum, 2013, 740-742, pp.986 - 989. ⟨10.4028/www.scientific.net/MSF.740-742.986⟩
Article dans une revue hal-01627784 v1

Understanding the growth of p-doped 4H-SiC layers using vapour–liquid–solid transport

A. Vo-Ha , D. Carole , Mihai Lazar , Dominique Tournier , F. Cauwet et al.
Thin Solid Films, 2013, 548, pp.125 - 129. ⟨10.1016/j.tsf.2013.09.030⟩
Article dans une revue istex hal-01627830 v1
Image document

Pulse Characterization of Optically Triggered SiC Thyristors

Nicolas Dheilly , Gontran Pâques , Sigo Scharnholz , Dominique Planson
Materials Science Forum, 2012, 717-720, pp.1179-1182. ⟨10.4028/www.scientific.net/MSF.717-720.1179⟩
Article dans une revue hal-02166420 v1
Image document

4H-SiC P<sup>+</sup>N UV Photodiodes : A Comparison between Beam and Plasma Doping Processes

Stéphane Biondo , Laurent Ottaviani , Mihai Lazar , Dominique Planson , Julian Duchaine et al.
Materials Science Forum, 2012, 717-720, pp.1203-1206. ⟨10.4028/www.scientific.net/MSF.717-720.1203⟩
Article dans une revue hal-02275699 v1

OBIC measurements on avalanche diodes in 4H-SiC for the determination of impact ionization coefficients

Duy Minh Nguyen , Christophe Raynaud , Mihai Lazar , Gontran Pâques , Sigo Scharnholz et al.
Materials Science Forum, 2012, 717-720, pp.545-548. ⟨10.4028/www.scientific.net/MSF.717-720.545⟩
Article dans une revue hal-00803059 v1
Image document

Pressureless Silver Sintering Die-Attach for SiC Power Devices

Stanislas Hascoët , Cyril Buttay , Dominique Planson , Rodica Chiriac , Amandine Masson
Materials Science Forum, 2012, 740 - 742, pp.851-854. ⟨10.4028/www.scientific.net/MSF.740-742.851⟩
Article dans une revue hal-00799893 v1
Image document

600 V PiN diodes fabricated using on-axis 4H silicon carbide

Gabriel Civrac , Farah Laariedh , Nicolas Thierry-Jebali , Mihai Lazar , Dominique Planson et al.
Materials Science Forum, 2012
Article dans une revue hal-02126341 v1

Electrical Characteristics of SiC UV-Photodetector Device from the P-I-N Structure Behaviour to the Junction Barrier Schottky Structure Behaviour

Stéphane Biondo , Mihai Lazar , Laurent Ottaviani , Wilfried Vervisch , Olivier Palais et al.
Materials Science Forum, 2012, 711, pp.114-117. ⟨10.4028/www.scientific.net/MSF.711.114⟩
Article dans une revue hal-04050522 v1

Investigations on Ni-Ti-Al Ohmic Contacts Obtained on P-Type 4H-SiC

Farah Laariedh , Mihai Lazar , Pierre Cremillieu , Jean -Louis Leclercq , Dominique Planson
Materials Science Forum, 2012, 711, pp.169-173. ⟨10.4028/www.scientific.net/MSF.711.169⟩
Article dans une revue hal-04050541 v1

Light triggered 4H-SiC thyristors with an etched guard ring assisted JTE

Nicolas Dheilly , Dominique Planson , Gontran Pâques , Sigo Scharnholz
Solid-State Electronics, 2012, 73, pp.32-36. ⟨10.1016/j.sse.2012.02.007⟩
Article dans une revue istex hal-00747348 v1
Image document

SIMS Analyses Applied to Open an Optical Window in 4H-SiC Devices for Electro-Optical Measurements

Mihai Lazar , François Jomard , Duy Minh M Nguyen , Christophe Raynaud , Gontran Pâques et al.
Materials Science Forum, 2012, 717-720, pp.885-888. ⟨10.4028/www.scientific.net/MSF.717-720.885⟩
Article dans une revue hal-02166414 v1

4H-silicon carbide thin junction based ultraviolet photodetectors

Stéphane Biondo , Mihai Lazar , Laurent Ottaviani , Wilfried Vervisch , Vincent Le Borgne et al.
Thin Solid Films, 2012, in press. ⟨10.1016/j.tsf.2011.12.079⟩
Article dans une revue istex hal-00747356 v1
Image document

Comparison of SiC Thyristors with Differently Etched JTEs

Gontran Pâques , Sigo Scharnholz , Nicolas Dheilly , Dominique Planson , Rik W. de Doncker
Materials Science Forum, 2012, 717-720, pp.1167 - 1170. ⟨10.4028/www.scientific.net/MSF.717-720.1167⟩
Article dans une revue hal-01627763 v1

Parallel and serial association of SiC light triggered thyristors

Nicolas Dheilly , Gontran Pâques , Sigo Scharnholz , Dominique Planson
Materials Science Forum, 2012, 711, pp.129-133. ⟨10.4028/www.scientific.net/MSF.711.129⟩
Article dans une revue hal-00661512 v1

Characterization and VHDL-AMS modeling of SiC-JFET transistor

Rami Mousa , Dominique Planson , Hervé Morel
European Journal of Electrical Engineering, 2011, 14 (1), pp.7-27. ⟨10.3166/EJEE.14.7-27⟩
Article dans une revue istex hal-00747438 v1

High-Voltage 4H-SiC Thyristors With a Graded Etched Junction Termination Extension

Gontran Pâques , Sigo Scharnholz , Nicolas Dheilly , Dominique Planson , Rik W. de Doncker
IEEE Electron Device Letters, 2011, 32 (10), pp.1421 - 1423. ⟨10.1109/LED.2011.2163055⟩
Article dans une revue hal-00661495 v1

Optical triggering of 4H-SiC thyristors with a 365 nm UV LED

Nicolas Dheilly , Gontran Pâques , Dominique Planson , Pascal Bevilacqua , Sigo Scharnholz
Materials Science Forum, 2011, 679-680, pp.690-693. ⟨10.4028/www.scientific.net/MSF.679-680.690⟩
Article dans une revue hal-00661458 v1

Investigation of Epitaxial SiC PiN Diodes with Variable Mesa Height

Gontran Pâques , Sigo Scharnholz , Jens-Peter Konrath , Nicolas Dheilly , Dominique Planson et al.
Materials Science Forum, 2011, 679-680, pp.473-476. ⟨10.4028/www.scientific.net/MSF.679-680.473⟩
Article dans une revue hal-00661475 v1

Study of 4H-SiC JBS Diodes Fabricated with Tungsten Schottky Barrier

Maxime Berthou , Philippe Godignon , Josep Montserrat , José Millán , Dominique Planson
Journal of Electronic Materials, 2011, 40 (12), pp.2355 - 2362. ⟨10.1007/s11664-011-1774-y⟩
Article dans une revue istex hal-01627572 v1
Image document

Influence of the Masking Material and Geometry on the 4H-SiC RIE Etched Surface State

Mihai Lazar , Fabrice Enoch , Farah Laariedh , Dominique Planson , Pierre Brosselard
Materials Science Forum, 2011, 679-680, pp.477-480. ⟨10.4028/www.scientific.net/MSF.679-680.477⟩
Article dans une revue hal-04343373 v1

Experimental determination of impact ionization coefficients in 4H-SiC

Duy Minh Nguyen , Christophe Raynaud , Nicolas Dheilly , Mihai Lazar , Dominique Tournier et al.
Diamond and Related Materials, 2011, 20 (3), pp.395-397. ⟨10.1016/j.diamond.2011.01.039⟩
Article dans une revue istex hal-00661429 v1
Image document

Avalanche Diodes with Low Temperature Dependence in 4H-SiC Suitable for Parallel Protection

Duy Minh Nguyen , Gontran Pâques , Nicolas Dheilly , Christophe Raynaud , Dominique Tournier et al.
Materials Science Forum, 2011, 679-680, pp.567-570. ⟨10.4028/www.scientific.net/MSF.679-680.567⟩
Article dans une revue hal-02168909 v1

Graded Etched Junction Termination for SiC Thyristors

Gontran Pâques , Nicolas Dheilly , Dominique Planson , Rik W. de Doncker , Sigo Scharnholz
Materials Science Forum, 2011, 679-680, pp.457-460. ⟨10.4028/www.scientific.net/MSF.679-680.457⟩
Article dans une revue hal-00661479 v1

Perspectives on SiC and III-N Based Devices for Power Electronics

Christian Brylinski , Dominique Planson
ECS Transactions, 2011, 41 (8), pp.139-152. ⟨10.1149/1.3631492⟩
Article dans une revue hal-04240508 v1
Image document

Diode Schottky sur diamant CVD. Simulation, réalisation technologique et étude de protection périphérique

Sojan Koné , Hui Ding , Fabien Thion , Henri Schneider , Karine Isoird et al.
European Journal of Electrical Engineering, 2011, 14 (5), pp.553 - 567. ⟨10.3166/ejee.14.553-567⟩
Article dans une revue hal-01627761 v1

Optical triggering of SiC thyristors using UV LEDs

Nicolas Dheilly , Gontran Pâques , Sigo Scharnholz , Pascal Bevilacqua , Christophe Raynaud et al.
Electronics Letters, 2011, 47 (7), pp.459 - 460. ⟨10.1049/el.2010.7041⟩
Article dans une revue hal-00661435 v1

State of the art of high temperature power electronics

Cyril Buttay , Dominique Planson , Bruno Allard , Dominique Bergogne , Pascal Bevilacqua et al.
Materials Science and Engineering: B, 2011, 176 (4), pp.283-288. ⟨10.1016/j.mseb.2010.10.003⟩
Article dans une revue hal-00597432 v1
Image document

Simulation and design of junction termination structures for diamond Schottky diodes

Fabien Thion , Karine Isoird , Dominique Planson , Marie-Laure Locatelli , Hui Ding
Diamond and Related Materials, 2011, 20 (5-6), pp.729-732. ⟨10.1016/j.diamond.2011.03.011⟩
Article dans une revue hal-00661491 v1

Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications

Dominique Tournier , Pierre Brosselard , Christophe Raynaud , Mihai Lazar , Hervé Morel et al.
Advanced Materials Research, 2011, Advances in Innovative Materials and Applications, pp.46-51. ⟨10.4028/www.scientific.net/AMR.324.46⟩
Article dans une revue hal-00799902 v1
Image document

Extreme dielectric strength in boron doped homoepitaxial diamond

Pierre-Nicolas Volpe , Pierre Muret , Julien Pernot , Franck Omnès , Tokuyuki Teraji et al.
Applied Physics Letters, 2010, 97 (22), pp.223501. ⟨10.1063/1.3520140⟩
Article dans une revue hal-00734714 v1

High breakdown voltage Schottky diodes synthesized on p-type CVD diamond layer

Pierre-Nicolas Volpe , Pierre Muret , Julien Pernot , Franck Omnès , Tokuyuki Teraji et al.
Physica Status Solidi A (applications and materials science), 2010, 207 (9), pp.2088-2092. ⟨10.1002/pssa.201000055⟩
Article dans une revue istex hal-00739492 v1
Image document

A Step Toward High Temperature Intelligent Power Modules Using 1.5kV SiC-BJT

Dominique Tournier , Pascal Bevilacqua , Pierre Brosselard , Dominique Planson
Materials Science Forum, 2010, 645-648, pp.1155-1158. ⟨10.4028/WWW.scientific.net/MSF.645-648.1155⟩
Article dans une revue hal-02168907 v1
Image document

Comparison of High Voltage and High Temperature Performances of Wide Bandgap Semiconductors for vertical Power Devices

Christophe Raynaud , Dominique Tournier , Hervé Morel , Dominique Planson
Diamond and Related Materials, 2010, 19, pp.1-6. ⟨10.1016/j.diamond.2009.09.015⟩
Article dans une revue hal-02186368 v1

Characterization of 4H-SiC Junction Barrier Schottky Diodes by Admittance vs Temperature Analyses

Christophe Raynaud , Duy Minh Nguyen , Pierre Brosselard , Amador Pérez-Tomás , Dominique Planson et al.
Materials Science Forum, 2009, 615-617, pp.671-674. ⟨10.4028/www.scientific.net/MSF.615-617.671⟩
Article dans une revue hal-00391462 v1

Analysis of the dynamic avalanche of punch through insulated gate bipolar transistor (PT-IGBT)

Pierre Lefranc , Dominique Planson , Hervé Morel , Dominique Bergogne
Solid-State Electronics, 2009, 53 (9), pp.944-954. ⟨10.1016/j.sse.2009.06.009⟩
Article dans une revue istex hal-00476201 v1
Image document

Temperature Dependence lifetime measurements on 3.3kV 4H-SiC PiN Diodes using OCVD Technique

Nicolas Dheilly , Dominique Planson , Pierre Brosselard , Jawad Ul Hassan , Pascal Bevilacqua et al.
Materials Science Forum, 2009, MATERIALS SCIENCE FORUM, 615-617, pp.703-706. ⟨10.4028/www.scientific.net/MSF.615-617.703⟩
Article dans une revue hal-04368136 v1
Image document

Polyimide Passivation Effect on High Voltage 4H-SiC PiN Diode Breakdown Voltage

Sombel Diaham , Marie Laure Locatelli , Thierry Lebey , Christophe Raynaud , Mihai Lazar et al.
Materials Science Forum, 2009, MATERIALS SCIENCE FORUM, 615-617, pp.695-698. ⟨10.4028/www.scientific.net/MSF.615-617.695⟩
Article dans une revue hal-04368204 v1

High Power Density SiC 450A AccuMOSFET for Current Limiting Applications

Dominique Tournier , Pascal Bevilacqua , Dominique Planson , Hervé Morel , Pierre Brosselard et al.
Materials Science Forum, 2009, MATERIALS SCIENCE FORUM, 615-617, pp.911-914. ⟨10.4028/www.scientific.net/MSF.615-617.911⟩
Article dans une revue hal-04368124 v1
Image document

Process Optimization for High Temperature SiC Lateral Devices

Maher Soueidan , Mihai Lazar , Duy Minh Nguyen , Dominique Tournier , Christophe Raynaud et al.
Materials Science Forum, 2009, MATERIALS SCIENCE FORUM, 615-617, pp.585-588. ⟨10.4028/www.scientific.net/MSF.615-617.585⟩
Article dans une revue hal-04368215 v1

Optical beam induced current measurements: principles and applications to SiC device characterization

Christophe Raynaud , Duy Minh Nguyen , Nicolas Dheilly , Dominique Tournier , Pierre Brosselard et al.
Physica Status Solidi A (applications and materials science), 2009, 206 (10), pp.2273-2283. ⟨10.1002/pssa.200825183⟩
Article dans une revue istex hal-00398971 v1

Determination of ambipolar lifetime and epilayer thickness of 5 kV SiC bipolar devices by switching transient studies

Tarek Ben Salah , Damien Risaletto , Christophe Raynaud , Kamel Besbes , Dominique Bergogne et al.
Materials Science Forum, 2008, Materials Science Forum, Volumes 600-603, pp.1031-1034. ⟨10.4028/www.scientific.net/MSF.600-603.1031⟩
Article dans une revue hal-04452237 v1

Comparison of Electrical Properties of Ohmic Contact Realized on p-type 4H-SiC

Duy Minh Nguyen , Christophe Raynaud , Mihai Lazar , Heu Vang , Dominique Planson
Materials Science Forum, 2008, Materials Science Forum, 600-603, pp.639-642. ⟨10.4028/www.scientific.net/MSF.600-603.639⟩
Article dans une revue hal-00391560 v1
Image document

Impact of RIE Etching on the Breakdown Voltage of 4H-SiC Mesa Diode

Heu Vang , Sigo Scharnholz , Christophe Raynaud , Mihai Lazar , Gontran Pâques et al.
Materials Science Forum, 2008, MATERIALS SCIENCE FORUM, 600-603, pp.1011-1014. ⟨10.4028/www.scientific.net/MSF.600-603.1011⟩
Article dans une revue hal-04368150 v1
Image document

1.2 kV pin diodes with SiCrystal epiwafer

Heu Vang , Christophe Raynaud , Pierre Brosselard , Mihai Lazar , Pierre Cremillieu et al.
Materials Science Forum, 2007, MATERIALS SCIENCE FORUM, 556-557, pp.901-904. ⟨10.4028/www.scientific.net/MSF.556-557.901⟩
Article dans une revue hal-04369138 v1
Image document

Use of Graphite Cap to Reduce Unwanted Post-Implantation Annealing Effects in SiC

Erwan Oliviero , Mihai Lazar , Heu Vang , Christiane Dubois , Pierre Cremillieu et al.
Materials Science Forum, 2007, MATERIALS SCIENCE FORUM, 556-557, pp.611-614. ⟨10.4028/www.scientific.net/MSF.556-557.611⟩
Article dans une revue hal-04369331 v1
Image document

OBIC Analysis of Different Edge Terminations of Planar 1.6 kV 4H-SiC Diodes

Christophe Raynaud , Daniel Loup , Phillippe Godignon , Raul Perez Rodriguez , Dominique Tournier et al.
Materials Science Forum, 2007, MATERIALS SCIENCE FORUM, 556-557, pp.1007-1010. ⟨10.4028/www.scientific.net/MSF.556-557.1007⟩
Article dans une revue hal-04369314 v1
Image document

Ni-Al ohmic contact to p-type 4H-SiC

Heu Vang , Mihai Lazar , Pierre Brosselard , Christophe Raynaud , Pierre Cremilleu et al.
Superlattices and Microstructures, 2006, 40 (4-6), pp.626-631
Article dans une revue hal-00141426 v1
Image document

Composants de puissance en SiC. Etat de l'art

Dominique Planson , Christophe Raynaud , Pierre Brosselard , Dominique Bergogne , Mihai Lazar et al.
European Journal of Electrical Engineering, 2006, 9 (4-5), pp.595-611
Article dans une revue hal-04371563 v1
Image document

Deep SiC etching with RIE

Mihai Lazar , Heu Vang , Pierre Brosselard , Christophe Raynaud , Pierre Cremilleu et al.
Superlattices and Microstructures, 2006, 40 (4-6), pp.388-392. ⟨10.1016/j.spmi.2006.06.015⟩
Article dans une revue hal-00179458 v1
Image document

Current sensing for SiC Power Devices

D. Tournier , Miquel Vellvehi , Philippe Godignon , Josep Montserrat , Dominique Planson et al.
Materials Science Forum, 2006, MATERIALS SCIENCE FORUM, 527-529, pp.1215-1218. ⟨10.4028/www.scientific.net/MSF.527-529.1215⟩
Article dans une revue hal-04369348 v1
Image document

P-type SiC layers formed by VLS induced selective epitaxial growth

Mihai Lazar , Christophe Jacquier , Christiane Dubois , Christophe Raynaud , Gabriel Ferro et al.
Materials Science Forum, 2005, 483-485, pp.633-636. ⟨10.4028/www.scientific.net/MSF.483-485.633⟩
Article dans une revue hal-04362494 v1
Image document

A 3.5 kV Thyristor in 4H-SiC with a JTE Periphery

Pierre Brosselard , Thierry Bouchet , Dominique Planson , Sigo Scharnholz , Gontran Pâques et al.
Materials Science Forum, 2005, 483-485, pp.1005-1008. ⟨10.4028/www.scientific.net/MSF.483-485.1005⟩
Article dans une revue hal-04345858 v1
Image document

Composants à semi-conducteur de puissance pour des applications à haute température de fonctionnement

Bruno Allard , Gérard Coquery , Laurent Dupont , Zoubir Khatir , Mihai Lazar et al.
Journal sur l'enseignement des sciences et technologies de l'information et des systèmes, 2005, 4 (HS), pp. 18-19. ⟨10.1051/bib-j3ea:2005610⟩
Article dans une revue hal-01702019 v1

OBIC analysis for 1.3 kV 6H-SiC p(+)n planar bipolar diodes protected by Junction Termination Extension

Christophe Raynaud , S. Wang , Dominique Planson , Mihai Lazar , Jean-Pierre Chante
Diamond and Related Materials, 2004, 13 (9), pp.1697-1703
Article dans une revue hal-00140107 v1
Image document

Towards the Fabrication and Measurement of High Sensitivity SiC-UV Detectors with Oxide Ramp Termination

Gheorghe Brezeanu , Phillippe Godignon , E. Dimitrova , Christophe Raynaud , Dominique Planson et al.
Materials Science Forum, 2004, 457-460, pp.1495-1498. ⟨10.4028/www.scientific.net/MSF.457-460.1495⟩
Article dans une revue hal-04093364 v1
Image document

On-Chip Temperature Monitoring of a SiC Current Limiter

Dominique Tournier , Phillippe Godignon , José Millan , Dominique Planson , Jean-Pierre Chante et al.
Materials Science Forum, 2004, 457-460, pp.1021-1024. ⟨10.4028/www.scientific.net/MSF.457-460.1021⟩
Article dans une revue hal-02966528 v1
Image document

Influence of Different Peripheral Protections on the Breakover Voltage of a 4H-SiC GTO Thyristor

Pierre Brosselard , Volker Zorngiebel , Dominique Planson , Sigo Scharnholz , Jean-Pierre Chante et al.
Materials Science Forum, 2004, 457-460, pp.1129-1132. ⟨10.4028/www.scientific.net/MSF.457-460.1129⟩
Article dans une revue hal-04092535 v1
Image document

The Role of the Ion Implanted Emitter State on 6H-SiC Power Diodes Behavior. A Statistical Study

Mihai Lazar , G.C. Cardinali , Christophe Raynaud , Antonella Poggi , Dominique Planson et al.
Materials Science Forum, 2004, 457-460, pp.1025-1028. ⟨10.4028/www.scientific.net/MSF.457-460.1025⟩
Article dans une revue hal-04345830 v1
Image document

Characterization of a 4H-SiC High Power Density Controlled Current Limiter

Dominique Tournier , Phillippe Godignon , Josep Montserrat , Dominique Planson , Christophe Raynaud et al.
Materials Science Forum, 2003, 433-436, pp.871-874. ⟨10.4028/www.scientific.net/MSF.433-436.871⟩
Article dans une revue hal-02458100 v1
Image document

A 4H-SiC high-power-density VJFET as controlled current limiter

Dominique Tournier , Philippe Godignon , Josep Montserrat , Dominique Planson , Christophe Raynaud et al.
IEEE Transactions on Industry Applications, 2003, 39 (5), pp.1508-1513
Article dans une revue hal-00140109 v1
Image document

Fabrication and Characterisation of High Voltage SiC-Thyristors

Volker Zorngiebel , Sigo Scharnholz , Emil Spahn , Pierre Brosselard , N. Arssi et al.
Materials Science Forum, 2003, 433-436, pp.883-886. ⟨10.4028/www.scientific.net/MSF.433-436.883⟩
Article dans une revue hal-02489305 v1

Effect of ion implantation parameters on Al dopant redistribution in SiC after annealing: Defect recovery and electrical properties of p-type layers

Mihai Lazar , Christophe Raynaud , Dominique Planson , Jean-Pierre Chante , Marie-Laure Locatelli et al.
Journal of Applied Physics, 2003, 94 (5), pp.2992-2998
Article dans une revue hal-00140110 v1
Image document

OBIC Measurements of 1.3kV 6H-SiC Bipolar Diodes Protected by Junction Termination Extension

S.R. Wang , Christophe Raynaud , Dominique Planson , Mihai Lazar , Jean-Pierre Chante
Materials Science Forum, 2003, 433-436, pp.863-866. ⟨10.4028/www.scientific.net/MSF.433-436.863⟩
Article dans une revue hal-04091213 v1
Image document

SiC Power Devices on QUASIC and SiCOI Smart-Cut<sup>®</sup> Substrates: First Demonstrations

Fabrice Letertre , N. Daval , Francois Templier , Edwige Bano , Dominique Planson et al.
Materials Science Forum, 2003, 433-436, pp.813-818. ⟨10.4028/www.scientific.net/MSF.433-436.813⟩
Article dans une revue hal-04091219 v1

Optimal layout for 6H-SiC VJFET controlled current limiting device

Dominique Tournier , Xavier Jordà , Philippe Godignon , Dominique Planson , Jean-Pierre Chante et al.
Diamond and Related Materials, 2003, 12 (3-7), pp.1220-1223
Article dans une revue hal-00140113 v1
Image document

Simulation Study of a Novel Current-Limiting Device: A Vertical α-SiC JFET - Controlled Current Limiter

Dominique Tournier , Phillippe Godignon , Josep Montserrat , Dominique Planson , Jean-Pierre P Chante et al.
Materials Science Forum, 2002, 389-393, pp.1243-1246. ⟨10.4028/www.scientific.net/MSF.389-393.1243⟩
Article dans une revue hal-02151713 v1
Image document

Study of 4H-SiC High-Voltage Bipolar Diodes under Reverse Bias Using Electrical and OBIC Characterization

K. Isoird , Mihai Lazar , Marie-Laure Locatelli , Christophe Raynaud , Dominique Planson et al.
Materials Science Forum, 2002, 389-393, pp.1289-1292. ⟨10.4028/www.scientific.net/MSF.389-393.1289⟩
Article dans une revue hal-02151720 v1

Characteristics of aluminum-implanted 6H-SiC samples after different thermal treatments

Laurent Ottaviani , Mihai Lazar , Marie-Laure Locatelli , Dominique Planson , Jean-Pierre Chante et al.
Materials Science and Engineering: B, 2002, 90 (3), pp.301-308. ⟨10.1016/S0921-5107(02)00002-8⟩
Article dans une revue istex hal-00140116 v1
Image document

Compatibility of VJFET Technology with MESFET Fabrication and Its Interest for System Integration: Fabrication of 6H and 4H-SiC 110 V Lateral MESFET

Dominique Tournier , Phillippe Godignon , Josep Montserrat , Dominique Planson , Jean-Pierre P Chante et al.
Materials Science Forum, 2002, 389-393, pp.1403-1406. ⟨10.4028/www.scientific.net/MSF.389-393.1403⟩
Article dans une revue hal-02151712 v1
Image document

A Comparative Study of High-Temperature Aluminum Post-Implantation Annealing in 6H- and 4H-SiC, Non-Uniform Temperature Effects

Mihai Lazar , Christophe Raynaud , Dominique Planson , Marie-Laure Locatelli , K. Isoird et al.
Materials Science Forum, 2002, 389-393, pp.827-830. ⟨10.4028/www.scientific.net/MSF.389-393.827⟩
Article dans une revue hal-02151714 v1
Image document

Realization of a High-Current and Low R<sub>ON</sub> 600V Current-Limiting Device

F. Nallet , Phillippe Godignon , Dominique Planson , Christophe Raynaud , Jean-Pierre P Chante
Materials Science Forum, 2002, 389-393, pp.1247-1250. ⟨10.4028/www.scientific.net/MSF.389-393.1247⟩
Article dans une revue hal-02151717 v1
Image document

High Electrical Activation of Aluminium and Nitrogen Implanted in 6H-SiC at Room Temperature by RF Annealing

Mihai Lazar , Laurent Ottaviani , Marie-Laure Locatelli , Christophe Raynaud , Dominique Planson et al.
Materials Science Forum, 2001, 353-356, pp.571-574. ⟨10.4028/www.scientific.net/MSF.353-356.571⟩
Article dans une revue hal-02151710 v1
Image document

Study of 6H-SiC high voltage bipolar diodes under reverse biases

Karine Isoird , Mihai Lazar , Laurent Ottaviani , Marie-Laure Locatelli , Christophe Raynaud et al.
Applied Surface Science, 2001, 184 (1-4), pp.477-482. ⟨10.1016/S0169-4332(01)00537-2⟩
Article dans une revue istex hal-00140118 v1

Experimental characterization of a 4H-SiC high voltage current limiting device

F. Nallet , Dominique Planson , Philippe Godignon , Marie-Laure Locatelli , Mihai Lazar et al.
Applied Surface Science, 2001, 184 (1-4), pp.404-407
Article dans une revue hal-00140117 v1

Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy

N. S. Savkina , A. A. Lebedev , D. V. Davydov , A. M. Strel'Chuk , A. S. Tregubova et al.
Materials Science and Engineering: B, 2000, 77 (1), pp.50-54
Article dans une revue hal-00140585 v1
Image document

Improved Annealing Process for 6H-SiC p<sup>+</sup>-n Junction Creation by Al Implantation

Mihai Lazar , Laurent Ottaviani , Marie-Laure Locatelli , Dominique Planson , Bruno Canut et al.
Materials Science Forum, 2000, 338-342, pp.921-924. ⟨10.4028/www.scientific.net/MSF.338-342.921⟩
Article dans une revue hal-02275720 v1
Image document

Study of the Breakdown Voltage of Protected or Non-Protected 6H-SiC Bipolar Diodes by OBIC Characterisation

Karine Isoird , Laurent Ottaviani , Marie-Laure Locatelli , Dominique Planson , Christophe Raynaud et al.
Materials Science Forum, 2000, 338-342, pp.1363-1366. ⟨10.4028/www.scientific.net/MSF.338-342.1363⟩
Article dans une revue hal-02281030 v1

Aluminum multiple implantations in 6H–SiC at 300 K

Laurent Ottaviani , Erwan Morvan , Marie-Laure Locatelli , Dominique Planson , Philippe Godignon et al.
Solid-State Electronics, 1999, 43 (12), pp.2215-2223. ⟨10.1016/S0038-1101(99)00199-9⟩
Article dans une revue istex hal-03727987 v1

Electrical characterisation of MNOS devices on p-type 6H-SiC

S. Berberich , Philippe Godignon , José del R. Millán , Dominique Planson , H. Hartnagel et al.
Diamond and Related Materials, 1999, 8 (2-5), pp.305-308
Article dans une revue hal-00141547 v1

Design of a 600 V silicon carbide vertical power MOSFET

Dominique Planson , Marie-Laure Locatelli , F. Lanois , Jean-Pierre Chante
Materials Science and Engineering: B, 1999, 61 (2), pp.497-501
Article dans une revue hal-00141536 v1

P-N Junction creation in 6H-SiC by aluminum implantation

Laurent Ottaviani , Marie-Laure Locatelli , Dominique Planson , Karine Isoird , Jean-Pierre Chante et al.
Materials Science and Engineering: B, 1999, 61 (2), pp.424-428
Article dans une revue hal-00141527 v1
Image document

Post-Implantation Annealing of Aluminium in 6H-SiC

Laurent Ottaviani , Dominique Planson , Marie-Laure Locatelli , Jean-Pierre Chante , B. Canut et al.
Materials Science Forum, 1998, 264-268, pp.709-712. ⟨10.4028/www.scientific.net/MSF.264-268.709⟩
Article dans une revue hal-02281029 v1

Metal-Nitride-Semiconductor Capacitors on 6H-SiC

Stefan Berberich , Phillippe Godignon , José Millan , Dominique Planson , H.L. Hartnagel et al.
Materials Science Forum, 1998, 264-268, pp.881-884. ⟨10.4028/www.scientific.net/MSF.264-268.881⟩
Article dans une revue hal-03728071 v1
Image document

Comparison between Aluminium and Boron-Doped Junction Termination Extensions for high Voltage 6H-SiC Planar Bipolar Diodes

S. Ortolland , Marie-Laure Locatelli , Dominique Planson , Jean-Pierre Chante , A. Senes
Materials Science Forum, 1998, 264-268, pp.1045-1048. ⟨10.4028/www.scientific.net/MSF.264-268.1045⟩
Article dans une revue hal-04691862 v1
Image document

Les composants de puissance : état de l'art, les évolutions

Jean-Pierre Chante , Bruno Allard , Dominique Bergogne , Francis Calmon , René Elhinger et al.
Revue Internationale de Génie Electrique, RIGE, 1998
Article dans une revue hal-02117240 v1

Deep centers and negative temperature coefficient of the breakdown voltage of SiC p-n structures

A. A. Lebedev , S. Ortolland , Christophe Raynaud , Marie-Laure Locatelli , Dominique Planson et al.
Semiconductors, 1997, 31 (7), pp.735-737
Article dans une revue hal-00141601 v1

Periphery protection for silicon carbide devices: State of the art and simulation

Dominique Planson , Marie-Laure Locatelli , S. Ortolland , Jean-Pierre Chante , H. Mitlehner et al.
Materials Science and Engineering: B, 1997, 46 (1-3), pp.210-217
Article dans une revue hal-00141603 v1

Damage annealing and dopant activation in Al ion implanted alpha-SiC

B. Canut , S. Ramos , J. Roger , Jean-Pierre Chante , Marie-Laure Locatelli et al.
Materials Science and Engineering: B, 1997, 46 (1-3), pp.267-270. ⟨10.1016/S0921-5107(96)01986-1⟩
Article dans une revue istex hal-00141605 v1

Angle etch control for silicon carbide power devices

F. Lanois , P. Lassagne , Dominique Planson , Marie-Laure Locatelli
Applied Physics Letters, 1996, 69 (2), pp.236-238
Article dans une revue hal-00141623 v1
Image document

The negative temperature coefficient of the breakdown voltage of SiC p-n structures and deep centers in SiC

A A Lebedev , A M Strel'Chuk , S. Ortolland , C Raynaud , Marie-Laure Locatelli et al.
Institute of Physics Conference Series, 1996
Article dans une revue hal-02423361 v1
Image document

Repetitive Short-circuits on 650 V GaN

Adrien Lambert , Hervé Morel , Dominique Planson , Luong Viêt Phung , Dominique Tournier et al.
PCIM Europe 2024, Jun 2024, Nuremberg, Germany
Communication dans un congrès hal-04626451 v1
Image document

Electrical characterization of HV (10 kV) Power 4H-SiC Bipolar Junction Transistor

Pierre Brosselard , Brenda Fosso-Sob , Dominique Planson , Pascal Bevilacqua , Camille Sonneville et al.
International Conference on Silicon Carbide and Related Materials (ICSCRM 2024), Sep 2024, Raleigh (North Carolina), United States. pp.126-128
Communication dans un congrès hal-04677764 v1
Image document

Peripheral defects related to processing technique in GaN-on-GaN vertical devices

M Dagher , G Brémond , Camille Sonneville , Dominique Planson , H Haas et al.
Workshop on Nitride Semiconductors IWN 2024, Nov 2024, O'ahu (Honolulu), United States
Communication dans un congrès hal-04855750 v1
Image document

Carrier density analysis in stressed n-doped GaN layers on sapphire

Ndembi Ignoumba-Ignoumba , Camille Sonneville , Éric Frayssinet , Adrien Bidaud , Florian Bartoli et al.
GaN Marathon, Jun 2024, Vérone, Italy
Communication dans un congrès hal-04639487 v1
Image document

Impact of Substrate Quality on Vertical GaN-on-GaN Schottky and PiN Devices

M Dagher , Camille Sonneville , Dominique Planson , V Maurya , J Buckley et al.
e-MRS Fall Meeting, Sep 2024, Varsovie (Warsaw), Poland
Communication dans un congrès hal-04855745 v1
Image document

Matching physical and electrical measurements (OBIC) to simulation (FEM) on high voltage bipolar diodes

Dominique Planson , Camille Sonneville , Pascal Bevilacqua , Pierre Brosselard , Mihai Lazar et al.
International Conference on Silicon Carbide and Related Materials (ICSCRM 2024), Sep 2024, Raleigh (North Carolina), United States. pp.591-592
Communication dans un congrès hal-04680725 v1
Image document

Emerging trends in OBIC characterization technique for Wide Bandgap semiconductor devices

Dominique Planson , Camille Sonneville , Pascal Bevilacqua , Dominique Tournier
International Semiconductor Conference (CAS-2023), IMT Bucharest, Oct 2023, Sinaia, Romania. pp.3-10, ⟨10.1109/CAS59036.2023.10303647⟩
Communication dans un congrès hal-04238355 v1
Image document

Impact of Wide Band-Gap Semiconductors on the Design in Power Electronics

Hervé Morel , Maroun Alam , Pascal Bevilacqua , D. Tournier , Dominique Planson
Symposium on Advanced Technologies in Electrical Systems (SATES 2023), Mar 2023, Arras, France
Communication dans un congrès hal-04224402 v1

Vertical pin diodes on large freestanding (100) diamond film

M.A. Pinault-Thaury , Mohamed Bouras , Rémi Gillet , Ingrid Stenger , François Jomard et al.
2023 EUROPEAN MATERIALS RESEARCH SOCIETY Spring Meeting, EUROPEAN MATERIALS RESEARCH SOCIETY, May 2023, Strasbourg, France
Communication dans un congrès hal-04219862 v1
Image document

Visualization of P$^+$ JTE embedded rings used for peripheral protection of high voltage Schottky diodes by the Optical Beam Induced Current (OBIC) technique

Dominique Planson , D. Tournier , Pascal Bevilacqua , Camille Sonneville , Pierre Brosselard et al.
ICSCRM 2023 - International Conference on Silicon Carbide and Related Materials, Sep 2023, Sorrente, Italy
Communication dans un congrès hal-04218429 v1
Image document

Application of the Double Source Switching Test to GaN HEMTs

Tamiris Grossl Bade , Maroun Alam , Hervé Morel , Dominique Planson
25th Conference on Power Electronics and Applications (and Exhibition), EPE ’23 (IEEE) ECCE Europe (Energy Conversion Congress and Expo Europe), Sep 2023, Aalborg, Denmark. ⟨10.23919/EPE23ECCEEurope58414.2023.10264519⟩
Communication dans un congrès hal-04225311 v1
Image document

Design and Characterization of an Optical 4H-SiC Bipolar Junction Transistor

Pierre Brosselard , Dominique Planson , D. Tournier , Pascal Bevilacqua , Camille Sonneville et al.
ICSCRM 2023 - International Conference on Silicon Carbide and Related Materials, Sep 2023, Sorrente, Italy
Communication dans un congrès hal-04222211 v1
Image document

First Results on 1.2 kV SiC MOSFET Body Diode Robustness Tests

Hassan Hamad , Dominique Tournier , Jean-Michel Reynes , Olivier Perrotin , Régis Meuret et al.
34th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Oct 2023, Toulouse, France
Communication dans un congrès hal-04240602 v1
Image document

Full-SiC Single-Chip High-Side and Low-Side Dual-MOSFET for Ultimate Power Vertical Integration -Basic Concept and Technology

Ralph Makhoul , Nour Beydoun , Abdelhakim Bourennane , Luong Viet Phung , M. Lazar et al.
25th Conference on Power Electronics and Applications (and Exhibition), EPE ’23 (IEEE) ECCE Europe (Energy Conversion Congress and Expo Europe), Sep 2023, Aalborg, Denmark. ⟨10.23919/EPE23ECCEEurope58414.2023.10264325⟩
Communication dans un congrès hal-04203163 v1
Image document

Full-SiC Single-Chip Buck and Boost MOSFET-JBS Converters for Ultimate Efficient Power Vertical Integration

Ralph Makhoul , Abdelhakim Bourennane , Luong Viêt Phung , Frédéric Richardeau , Mihai Lazar et al.
IEEE 30th International Conference Mixed Design of Integrated Circuits and Systems, Institute of Computer Science of AGH University of Science and Technology, Jun 2023, Kraków, Poland. https://www.mixdes.org/Mixdes3/, ⟨10.23919/MIXDES58562.2023.10203213⟩
Communication dans un congrès hal-04147862 v1
Image document

Micro-Raman characterization of vertical GaN Schottky and PN diodes

Camille Sonneville , Vishwajeet Maurya , Maroun Dagher , Adam Mohamed Kaywah , Eric Frayssinet et al.
46th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe and 17th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (WOCSDICE-EXMATEC 2023), May 2023, Palerme, Italy
Communication dans un congrès hal-04170420 v1
Image document

Caractérisation dynamique de thyristors SiC avec gâchette amplificatrice

Sigo Scharnholz , Kamil Kotra , Ralf Hassdorf , Luong Viêt Phung , Dominique Planson
5ème Symposium de Génie Electrique (SGE 2023), Jul 2023, Lille, France
Communication dans un congrès hal-04401362 v1
Image document

Courts-circuits répétitifs non-destructifs sur des transistors HEMT-GaN 650 V

Adrien Lambert , Hervé Morel , D. Tournier , Dominique Planson , Luong Viêt Phung et al.
5ème Symposium de Génie Electrique (SGE 2023), Jul 2023, Lille, France
Communication dans un congrès hal-04150168 v1
Image document

Concept and technology for full monolithic MOSFET and JBS vertical integration in multi-terminal 4H-SiC power converters

Ralph Makhoul , Nour Beydoun , Abdelhakim Bourennane , Luong Viêt Phung , Frédéric Richardeau et al.
ICSCRM 2023 - International Conference on Silicon Carbide and Related Materials, Sep 2023, Sorrente, Italy
Communication dans un congrès hal-04221605 v1

Trapping effects in High-Power 4H-Silicon Carbide (4H-SiC) Bipolar PiN Rectifiers

P Vigneshwara Raja , Besar Asllani , Christophe Raynaud , Hervé Morel , Luong Viet Phung et al.
6th IEEE International Conference on Emerging Electronics (ICEE 2022), IEEE, Dec 2022, Bangalore, India
Communication dans un congrès hal-04011039 v1
Image document

Multiphysics Characterizations of Vertical GaN Schottky Diodes

Atse Julien Eric N’dohi , Camille Sonneville , Soufiane Saidi , Thi Huong Ngo , P. de Mierry et al.
2022 Compound Semiconductor Week (CSW), Jun 2022, Ann Arbor, United States. pp.1-2, ⟨10.1109/CSW55288.2022.9930447⟩
Communication dans un congrès hal-03844585 v1
Image document

Design of a test package for high voltage SiC diodes

Arthur Boutry , Bruno Lefebvre , Cyril Buttay , Eric Vagnon , Dominique Planson et al.
Proceedings of the International Workshop on Integrated Power Packaging (IWIPP 2022), Aug 2022, Grenoble, France. ⟨10.1109/IWIPP50752.2022.9894223⟩
Communication dans un congrès hal-03772006 v1

Dynamic characterization of SiC thyristors with amplifying gate design

K Kotra , S Scharnholz , R Hassdorf , L V Phung , Dominique Planson
E-MRS 2022 Fall Meeting, Sep 2022, Varsovie, Poland
Communication dans un congrès hal-04011099 v1

Electrically Active Traps in Bipolar 10 kV 8 A Silicon Carbide (SiC) PiN Diodes

P Vigneshwara Raja , Christophe Raynaud , Besar Asllani , Herve Morel , Dominique Planson
International Symposium On Semiconductor Materials and Devices ISSMD 2022, Dec 2022, Bhubaneswar, India
Communication dans un congrès hal-03990840 v1
Image document

Caractérisation par spectroscopie micro-Raman de diodes GaN Schottky

Camille Sonneville , Atse Julien Eric N’dohi , S Saidi , T H Ngo , P. de Mierry et al.
Conférence Internationale Matériaux, Oct 2022, Lille, France
Communication dans un congrès hal-03844887 v1
Image document

Vertical current temperature analysis of GaN-on-Si epitaxy through analytical modelling

Florian Rigaud-Minet , Julien Buckley , William Vandendaele , Stéphane Becu , Matthew Charles et al.
SSDM 2022 - 2022 International conference on solid state devices and materials, Sep 2022, Chiba, Japan
Communication dans un congrès cea-03875079 v1
Image document

Electrical behavior of vertical Schottky diodes on GaN homoepitaxy

M Dagher , Camille Sonneville , Georges Bremond , Dominique Planson , Yvon Cordier et al.
IWN 2022 - International Workshop on Nitride Semiconductors, Oct 2022, Berlin, Germany
Communication dans un congrès hal-03854620 v1
Image document

Monitoring Dynamic Resistance of AlGaN/GaN Schottky Diodes After Quasi-Static and Hard Switching Stresses

Maroun Alam , Hervé Morel , Luong Viêt Phung , Dominique Planson , A. Yvon
2022 International Semiconductor Conference (CAS 2022), Oct 2022, Poiana Brasov, Romania. pp.195-198, ⟨10.1109/CAS56377.2022.9934143⟩
Communication dans un congrès hal-03887865 v1
Image document

Optimized Junction Termination Extension and Ring System for 11 kV 4H-SiC BJT

Ali Ammar , Mihai Lazar , Bertrand Vergne , Sigo Scharnholz , Luong Viêt Phung et al.
2022 International Semiconductor Conference (CAS 2022), Oct 2022, Poiana Brasov, Romania. pp.191-194, ⟨10.1109/CAS56377.2022.9934390⟩
Communication dans un congrès hal-03856578 v1
Image document

Toward an Innovative Monolithic Integration of Vertical and Lateral GaN Devices

Zahraa Zaidan , Nedal Al Taradeh , Christophe Rodriguez , Abdelatif Jaouad , Ali Soltani et al.
Conférence Euro-méditerranéenne Matériaux, Composants et Systèmes EMCM-DS, Oct 2022, Fes, Morocco
Communication dans un congrès hal-03946187 v1
Image document

Edge terminations for 4H-SiC power devices: a critical issue

P Godignon , J Montserrat , J Rebollo , Dominique Planson
ECSCRM 2020-2021, Oct 2021, Tours, France
Communication dans un congrès hal-03418183 v1

Homo epitaxial n-doped GaN layers investigation using Raman Spectroscopy for Vertical device applications

Atse Julien Eric N’dohi , Camille Sonneville , Thi Huong Ngo , P. de Mierry , Éric Frayssinet et al.
EXMATEC / WOCSDICE 2021 : 15th Expert Evaluation and Control of Compounds of Semiconductor Materials and Technologies, Jun 2021, Bristol, United Kingdom
Communication dans un congrès hal-03676503 v1
Image document

Switching Behavior and Comparison of Wide Bandgap Devices for Automotive Applications

Joao Oliveira , Ali Alhoussen , Florent Loiselay , Hervé Morel , Dominique Planson
EPE'21 ECCE Europe, Sep 2021, Ghent, Belgium. ⟨10.23919/EPE21ECCEEurope50061.2021.9570434⟩
Communication dans un congrès hal-03260519 v1

MULTIPHYSICS CHARACTERIZATIONS OF VERTICAL GaN SCHOTTKY DIODES

Atse Julien Eric N’dohi , Camille Sonneville , Soufiane Saidi , Thi Huong Ngo , P. de Mierry et al.
POWER 2021 (IMAPS), Nov 2021, Tours, France
Communication dans un congrès hal-03676940 v1

High voltage (6kV) diamond TMBS diode design

Ralph Makhoul , Karine Isoird , Luong Viet Phung , Dominique Planson
31st International Conference On Diamond and Carbon Materials, Sep 2021, Palma, Mallorca, Spain
Communication dans un congrès hal-03715580 v1
Image document

4H-SiC PiN diode protected by narrow field rings investigated by the micro-OBIC method

Dominique Planson , C Sonneville , Pascal Bevilacqua , L V Phung , B Asllani et al.
ECSCRM 2020-2021, Oct 2021, Tours, France
Communication dans un congrès hal-03410274 v1
Image document

Conception de diodes TMBS haute tension (6kV) en diamant

Ralph Makhoul , Karine Isoird , Luong Viet Phung , Dominique Planson
SYMPOSIUM DE GENIE ELECTRIQUE (SGE 2020), Jul 2021, Nantes, France
Communication dans un congrès hal-03355128 v1
Image document

Investigation of SiC thyristors with varying amplifying gate design

S Scharnholz , R Hassdorf , D Bauersfeld , B Vergne , Luong Viêt Phung et al.
European Conference on Silicon Carbide and Related Materials (ECSCRM2020) 2021, Oct 2021, Tours, France
Communication dans un congrès hal-03410752 v1
Image document

Enhanced Resonant Raman scattering of GaN functional layers using Al thin films -a versatile tool for multilayer structure analysis

Alina Muravitskaya , Anna Rumyantseva , Atse Julien Eric N’dohi , Camille Sonneville , Dominique Planson et al.
ECSCRM2020-2021, Oct 2021, Tours, France
Communication dans un congrès hal-03410757 v1
Image document

Demonstration of the Short-circuit Ruggedness of a 10 kV Silicon Carbide Bipolar Junction Transistor

Besar Asllani , Hervé Morel , Pascal Bevilacqua , Dominique Planson
EPE’20 ECCE Europe, Sep 2020, Lyon, France. ⟨10.23919/EPE20ECCEEurope43536.2020.9215769⟩
Communication dans un congrès hal-02945919 v1
Image document

Analysis of Parasitic Elements in Power Modules Based on GaN Components

Joao Oliveira , Hervé Morel , Dominique Planson , Florent Loiselay
PCIM Europe 2020, Jul 2020, Nuremberg, Germany
Communication dans un congrès hal-02945892 v1
Image document

Switching Loss Estimation Using a Validated Model of 650 V GaN HEMTs

Joao Oliveira , Florent Loiselay , Hervé Morel , Dominique Planson
EPE’20 ECCE Europe, Sep 2020, Lyon, France. ⟨10.23919/EPE20ECCEEurope43536.2020.9215793⟩
Communication dans un congrès hal-02945913 v1
Image document

SiC power MOSFETs Threshold-voltage hysteresis and its impact on Short Circuit operation

Besar Asllani , Hervé Morel , Dominique Planson , Asad Fayyaz , Alberto Castellazzi
ESARS-ITEC, IEEE, Nov 2018, Nottingham, United Kingdom. ⟨10.1109/ESARS-ITEC.2018.8607547⟩
Communication dans un congrès hal-01984359 v1
Image document

Effects of the laser beam size on the Optical Beam Induced Current (OBIC) for the study of Wide Band Gap (WBG) Semi-Conductor Devices

Camille Sonneville , Dominique Planson , Luong Viêt Phung , Besar Asllani , Pascal Bevilacqua
Workshop on Compound Semiconductor Devices and Integrated Circuits 2019 (WOCSDICE 2019), Jun 2019, Cabourg, France
Communication dans un congrès hal-02164000 v1
Image document

Interest of using a micro-meter spatial resolution to study SiC semi-conductor devices by Optical Beam Induced Current (OBIC)

Camille Sonneville , Dominique Planson , Luong Viêt Phung , Pascal Bevilacqua , Besar Asllani
International Conference on Silicon Carbide and Related Materials (ICSCRM) 2019, Sep 2019, Kyoto, Japan. pp.Mo-P-23
Communication dans un congrès hal-02428502 v1
Image document

V TH -Hysteresis and Interface States Characterisation in SiC Power MOSFETs with Planar and Trench Gate

Besar Asllani , Alberto Castellazzi , Oriol Aviño Salvado , Asad Fayyaz , Hervé Morel et al.
IRPS, Mar 2019, Monterey, CA, United States. ⟨10.1109/IRPS.2019.8720612⟩
Communication dans un congrès hal-02099781 v1
Image document

Static characteristics of 5 kV SiC BJTs and Darlington’s

Besar Asllani , Dominique Planson , Hervé Morel , T Lagier
International Conference on Silicon Carbide and Related Materials (ICSCRM) 2019, Sep 2019, Kyoto, Japan
Communication dans un congrès hal-02428513 v1
Image document

Advanced Electrical characterisation of high voltage 4H-SiC PiN diodes

Besar Asllani , Dominique Planson , Pascal Bevilacqua , J B Fonder , B Choucoutou et al.
ECSCRM'18, Sep 2018, Birmingham, United Kingdom. pp.WE.P.RD2
Communication dans un congrès hal-01985994 v1
Image document

Subthreshold Drain current hysteresis of planar SiC MOSFETs

Besar Asllani , A Castellazzi , Dominique Planson , Hervé Morel
ECSCRM'18, Sep 2018, Birmingham, United Kingdom. pp.TU.O4a.04
Communication dans un congrès hal-02428531 v1

Towards SiC thyristors with amplifying gate design

Ralf Hassdorf , Sigo Scharnholz , Dirk Bauersfeld , Bertrand Vergne , Luong Viêt Phung et al.
Symposium de Génie Electrique (SGE'18), Université de Lorraine [UL], Jul 2018, Nancy, France
Communication dans un congrès hal-02983373 v1
Image document

Multi-barrier height characterization and DLTS study on Ti/W 4H-SiC Schottky Diode

Teng Zhang , Christophe Raynaud , Dominique Planson
ECSCRM'18, Sep 2018, Birmingham, United Kingdom
Communication dans un congrès hal-02004837 v1
Image document

Experimental and simulation results of OBIC Technique Applied to Wide Bandgap Semiconductors

Dominique Planson , Luong-Viet Phung , Besar Asllani , Pascal Bevilacqua , Hassan Hamad et al.
e-MRS Fall Meeting, Sep 2018, Varsovie, Poland
Communication dans un congrès hal-02116919 v1
Image document

Conception and high temperature characterization of 10 kV 50 A 4H-SiC PiN diodes

B Choucoutou , Besar Asllani , L V Phung , J B Fonder , Dominnique Tournier et al.
European Conference on Silicon Carbide and Related Materials, Sep 2018, Birmingham, United Kingdom
Communication dans un congrès hal-02004841 v1
Image document

Mesure et analyse de la hauteur de barrière des contacts Schottky Mo sur SiC-4H

Teng Zhang , Christophe Raynaud , Dominique Planson
Symposium de Génie Electrique (SGE'18), Université de Lorraine [UL], Jul 2018, Nancy, France
Communication dans un congrès hal-02983328 v1
Image document

SiC lateral Schottky diode technology for integrated smart power converter

Jean-François Mogniotte , Christophe Raynaud , Mihai Lazar , Bruno Allard , Dominique Planson
2018 IEEE ICIT, Feb 2018, Lyon, France. ⟨10.1109/ICIT.2018.8352287⟩
Communication dans un congrès hal-01864545 v1
Image document

High-Voltage SiC-JFET Fabrication and Full Characterization

Besar Asllani , Pascal Bevilacqua , A. Zaoui , G Grosset , Dominique Planson et al.
ECSCRM'18, Sep 2018, Birmingham, United Kingdom. pp.TU.P_BP5
Communication dans un congrès hal-02428523 v1
Image document

Near breakdown voltage optical beam induced current (OBIC) on 4H-SiC bipolar diode

Dominique Planson , Besar Asllani , Hassan Hamad , Marie-Laure Locatelli , Lumei Wei et al.
International Conference on Silicon Carbide and Related Materials 2017 (ICSCRM 2017), Sep 2017, Washington, United States. pp.TH.DP.4
Communication dans un congrès hal-02138767 v1
Image document

Emergence of SiC Thyristors Featuring Amplifying Gate Design

Ralf Hassdorf , Sigo Scharnholz , Dirk Bauersfeld , Bertrand Vergne , Luong Viêt Phung et al.
International Conference on Silicon Carbide and Related Materials, Sep 2017, Washington DC, United States
Communication dans un congrès hal-02004843 v1
Image document

Technology Route towards SiC Thyristor Devices with Amplifying Gate Design

S Scharnholz , R Hassdorf , D Bauersfeld , B Vergne , L V Phung et al.
Compound Semiconductor Week 2017, May 2017, Berlin, Germany
Communication dans un congrès hal-03103484 v1
Image document

Surge driven evolution of Schottky barrier height on 4H-SiC JBS diodes

Besar Asllani , J B Fonder , Pascal Bevilacqua , Dominique Planson , L. Phung et al.
International Conference on Silicon Carbide and Related Materials 2017 (ICSCRM 2017), Sep 2017, Washington DC, United States
Communication dans un congrès hal-02132576 v1
Image document

Realization and characterization of carbonic layers on 4H-SiC for electrochemical detections

Julien Pezard , V. Souliere , Mihai Lazar , Naoufel Haddour , François Buret et al.
ECSCRM'16, Sep 2016, Halkidiki, Greece. pp.WeP-52
Communication dans un congrès hal-02138738 v1

OBIC Technique Applied to Wide Bandgap Semiconductors

Dominique Planson , Hassan Hamad
40th WOCSDICE ‐ Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe & 13th EXMATEC ‐ Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, Jun 2016, Aveiro, Portugal
Communication dans un congrès hal-01388036 v1
Image document

Very High Sustainable Forward Current Densities on 4H-SiC P+N- Junctions formed by localized VLS P+ epitaxy

Selsabil Sejil , Loïc Lalouat , Mihai Lazar , Davy Carole , Christian Brylinski et al.
ECSCRM'16, Sep 2016, Halkidiki, Greece
Communication dans un congrès hal-02138729 v1
Image document

Étude en simulation et conception d'un transistor bipolaire (BJT) 10 kV en 4H-SiC

Beverley Choucoutou , Luong Viet Phung , Pierre Brosselard , Michel Mermet-Guyennet , Dominique Planson
Symposium de Génie Electrique (SGE'16), Jun 2016, Grenoble, France
Communication dans un congrès hal-01361668 v1
Image document

Simulation-based Study on the Optical Beam Intensity Dependence of the Optically Triggered 4H-SiC Thyristors Turn-on Operation

Junichi Hasegawa , Loris Pace , Luong Viêt Phung , Mutsuko Hatano , Dominique Planson
International Conference on Solid State Devices and Materials 2016, Sep 2016, Tsukuba International Congress Center Tsukuba, Japan. ⟨10.7567/SSDM.2016.PS-14-17L⟩
Communication dans un congrès hal-04088082 v1

Vertical termination filled with adequate dielectric for SiC devices in HVDC applications

T. Nguyen-Bui , Mihai Lazar , Jean-Louis Augé , Hervé Morel , L. Phung et al.
International Conference on Silicon Carbide and Related Materials 2015 (ICSCRM 2015), Oct 2015, Giardini Naxos, Italy
Communication dans un congrès hal-02138529 v1
Image document

Lifetime of holes determination in 4H-SiC using two-photon optical beam induced current method

Hassan Hamad , Christophe Raynaud , Pascal Bevilacqua , Dominique Planson
CAS, Oct 2015, Sinaia, Romania. ⟨10.1109/SMICND.2015.7355226⟩
Communication dans un congrès hal-01388024 v1
Image document

Precise Automated Semiconductor Characterization under Ambient Control for testing wide band gap semiconductors

Bertrand Vergne , Sigo Scharnholz , Dominique Planson , Dominique Tournier , Pierre Brosselard
International Symposium on High Voltage Engineering (ISH) 2015, Aug 2015, Pilsen, Czech Republic
Communication dans un congrès hal-02428642 v1
Image document

Study and optimization of a 600V Pseudo-vertical GaN-on-silicon rectifier by finite elements simulation

A Souguir-Aouani , N. Thierry-Jebali , Dominique Tournier , A Yvon , E Collard et al.
ICSCRM 2015, Oct 2015, Giardini Naxos, Italy. pp.Mo-P-44
Communication dans un congrès hal-02138522 v1
Image document

Thermally stable ohmic contact to p-type 4H-SiC based on Ti3SiC2 phase

Tony Abi-Tannous , Maher Soueidan , G. Ferro , Mihai Lazar , Christophe Raynaud et al.
ICSCRM, Oct 2015, Giardini Naxos, Italy
Communication dans un congrès hal-02138520 v1
Image document

Temperature Dependence of 4H-SiC Ionization Rates Using Optical Beam Induced Current

Hassan Hamad , Christophe Raynaud , Pascal Bevilacqua , Sigo Scharnholz , Dominique Planson
ECSCRM'14, Sep 2014, Grenoble, France. pp.MO2-IP-08
Communication dans un congrès hal-02133683 v1
Image document

4H-SiC P-N junctions realized by VLS for JFET lateral structures

Selsabil Sejil , Farah Laariedh , Mihai Lazar , Davy Carole , Christian Brylinski et al.
ECSCRM'14, Sep 2014, Grenoble, France. pp.TU-P-61
Communication dans un congrès hal-02133686 v1
Image document

4H-SiC VJFETs with Self-Aligned Contacts

Konstantinos Zekentes , Antonis Stavrinidis , George Konstantinidis , Maria Kayambaki , Konstantinos Vamvoukakis et al.
ECSCRM'14, Sep 2014, Grenoble, France. pp.WE-P-75
Communication dans un congrès hal-02133681 v1
Image document

Classic and alternative methods of p-type doping 4H-SiC for integrated lateral devices

Mihai Lazar , Davy Carole , Christophe Raynaud , Gabriel Ferro , Selsabil Sejil et al.
CAS, Oct 2015, Sinaia, Romania. pp.145 - 148, ⟨10.1109/SMICND.2015.7355190⟩
Communication dans un congrès hal-01388019 v1
Image document

Determination of 4H-SiC ionization rates using OBIC based on two-photon absorption

Hassan Hamad , Christophe Raynaud , Pascal Bevilacqua , S Sharnholz , Bertrand Vergne et al.
International Conference on Silicon Carbide and Related Materials 2015 (ICSCRM 2015), Oct 2015, Giardini Naxos, Italy
Communication dans un congrès hal-02138523 v1
Image document

Localized VLS Epitaxy Process as a P-type Doping Alternative Technique for 4H-SiC P/N Junctions

Selsabil Sejil , Mihai Lazar , Davy Carole , Christian Brylinski , Dominique Planson et al.
Semiconductor Interface Specialists Conference (SISC 2015), Dec 2015, Arlington, United States
Communication dans un congrès hal-02428659 v1
Image document

Etude de différents transistors de puissance SiC 1.2kV des températures cryogéniques aux hautes températures

Thibaut Chailloux , Cyril Calvez , Dominique Tournier , Dominique Planson
Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France
Communication dans un congrès hal-01065281 v1
Image document

Les réseaux HVDC multi-terminaux : des défis multiples en génie électrique

Marc Petit , Seddik Bacha , Xavier Guillaud , Hervé Morel , Dominique Planson et al.
1er Symposium de Génie Électrique (SGE 2014), Jul 2014, Cachan, France
Communication dans un congrès hal-01065154 v1
Image document

Optimisation de la terminaison d'une diode Schottky diamant haute tension

Houssam Arbess , Karine Isoird , Dominique Planson , Luong Viet Phung
Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France
Communication dans un congrès hal-01065274 v1
Image document

On the chemistry of epitaxial Ti3SiC2 formation on 4H-SiC using Al-Ti annealing

Tony Abi Tannous , Maher Soueidan , Gabriel Ferro , Mihai Lazar , Bérangère Toury et al.
ECSCRM'14, Sep 2014, Grenoble, France. pp.TU-P-63
Communication dans un congrès hal-02428741 v1
Image document

Imagerie 2D du champ électrique dans les diodes SiC-4H haute tension par la technique OBIC

Hassan Hamad , Pascal Bevilacqua , Dominique Planson , Christophe Raynaud , Dominique Tournier et al.
Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France
Communication dans un congrès hal-01065307 v1
Image document

Conception de thyristors SiC permettant l'étude de l'amplification interne de l'allumage

Sigo Scharnholz , Luong Viêt Phung , Dominique Tournier , Bertrand Vergne , Ralf Hassdorf et al.
Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France
Communication dans un congrès hal-01065352 v1
Image document

Characterization and comparison of 1.2 kV SiC power devices from cryogenic to high temperature

Thibaut Chailloux , Cyril Calvez , Dominique Tournier , Dominique Planson
ECSCRM'14, Sep 2014, Grenoble, France
Communication dans un congrès hal-02132486 v1
Image document

Wide bandgap semiconductors for ultra high voltage devices. Design and characterization aspects

Dominique Planson , Pierre Brosselard , Karine Isoird , Mihai Lazar , Luong Viêt Phung et al.
CAS, Oct 2014, Sinaia, Romania. pp.35 - 40, ⟨10.1109/SMICND.2014.6966383⟩
Communication dans un congrès hal-01388002 v1

Two-dimensional Optical Beam Induced Current measurements in 4H-SiC bipolar diodes

Hassan Hamad , Pascal Bevilacqua , Christophe Raynaud , Dominique Planson
2014 IEEE PRIME, Jun 2014, Grenoble, France. ⟨10.1109/PRIME.2014.6872761⟩
Communication dans un congrès hal-01388043 v1
Image document

Nouveaux contacts électriques sur SiC-4H de type p : réalisation de phases MAX

Tony Abi Tannous , Maher Soueidan , Gabriel Ferro , Berangere Toury-Pierre , Mihai Lazar et al.
Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France
Communication dans un congrès hal-01065327 v1
Image document

Impact of design on electrical characteristics of 3.5 kV 4H-SiC JBS diode

Pierre Brosselard , F Chevalier , B Proux , N Thierry-Jebali , Pascal Bevilacqua et al.
International Silicon Carbide Hetero-Epitaxy HeteroSiC and Workshop on Advanced Semiconductor Materials and devices for Power Electronics WASMPE, Jun 2013, Nice, France
Communication dans un congrès hal-04022951 v1
Image document

SiC power devices operation from cryogenic to high temperature: investigation of various 1.2kV SiC power devices

T Chailloux , C Calvez , N Thierry-Jebaly , D. Tournier , Dominique Planson
International Conference on Silicon Carbide and Related Materials (ICSCRM) 2013, Sep 2013, Miyazaki, Japan. pp.1122-1125, ⟨10.4028/www.scientific.net/MSF.778-780.1122⟩
Communication dans un congrès hal-04169013 v1
Image document

Experimental Investigation of Electro-thermal Stress Impact on SiC-BJTs Electrical Characteristics

Thibault Chailloux , Cyril Calvez , Pascal Bevilacqua , Dominique Planson , Dominique Tournier
HiTEN'13, Jul 2013, Oxford, United Kingdom
Communication dans un congrès hal-03326669 v1

p-type SiC growth on diamond substrate by VLS Transport

Arthur Vo-Ha , Davy Carole , Mihai Lazar , D. Tournier , François Cauwet et al.
ECSCRM 2012, Sep 2012, Saint-Pétersbourg, Russia. 2p
Communication dans un congrès hal-04423301 v1
Image document

Influence of process parameters on electrical properties of PiN diodes fabricated with a highly p-type doped layer selectively grown by VLS transport

N Thierry-Jebali , Mihai Lazar , A Vo-Ha , D Carole , V Soulière et al.
International Conference on Silicon Carbide and Related Materials ICSCRM 2013, Sep 2013, Miyazaki, Japan
Communication dans un congrès hal-04011693 v1
Image document

Study of the Nucleation of p-doped SiC in Selective Epitaxial Growth using VLS Transport

Davy Carole , Arthur Vo-Ha , Anthony Thomas , Mihai Lazar , Nicolas Thierry Thierry-Jebali et al.
ECSCRM 2012, Sep 2012, Saint-Pétersbourg, Russia. 4p
Communication dans un congrès hal-04362529 v1
Image document

Pulse Current Characterization of SiC GTO Thyristors with Etched JTE

Sigo Scharnholz , Ralf Hassdorf , Gontran Pâques , Bertrand Vergne , Dominique Planson
European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), Sep 2012, Saint-Petersbourg, Russia. pp.986-989, ⟨10.4028/www.scientific.net/MSF.740-742.986⟩
Communication dans un congrès hal-04423357 v1
Image document

High temperature, Smart Power Module for aircraft actuators

Khalil El Falahi , Stanislas Hascoët , Cyril Buttay , Pascal Bevilacqua , Luong Viet Phung et al.
HiTEN'13, Jul 2013, Oxford, United Kingdom
Communication dans un congrès hal-00874666 v1

3D TCAD Simulations for More Efficient SiC Power Devices Design

Luong Viêt Phung , Dominique Planson , Pierre Brosselard , Dominique Tournier , Christian Brylinski
Electro Chemical Society 224th meeting, Oct 2013, San Francisco, United States. ⟨10.1149/05804.0331ecst⟩
Communication dans un congrès hal-04240572 v1
Image document

A path toward high voltage devices : 3.3 kV 4H-SiC JBS and JFET

F Chevalier , G Grosset , L Dupuy , Dominique Tournier , Dominique Planson et al.
HETECH, Nov 2012, Barcelone, France
Communication dans un congrès hal-01113179 v1

4H-SiC P +N UV photodiodes: A comparison between beam and plasma doping processes

Stéphane Biondo , Laurent Ottaviani , Mihai Lazar , Dominique Planson , Julian Duchaine et al.
CSCRM, Sep 2011, Cleveland, United States
Communication dans un congrès hal-00747301 v1

Using a two step plasma etching process for diamond power devices

F. Thion , K. Isoird , Dominique Planson , Marie-Laure Locatelli , Henri Schneider et al.
International Conference on Diamond and Carbon Materials Granada, SPAIN, 2012, Granada, Spain
Communication dans un congrès hal-03966086 v1
Image document

Protections périphériques des composants 1200 V

Florian Chevalier , Pierre Brosselard , D. Tournier , Bertrand Vergne , Nicolas Dheilly et al.
14ème EPF, Jul 2012, Bordeaux, France. 4 p
Communication dans un congrès hal-04560447 v1

Electrical characteristics (I-V) of field plate protected vertical diamond Schottky diodes

F. Thion , K. Isoird , Dominique Planson , Marie-Laure Locatelli , Henri Schneider et al.
International Conference on Diamond and Carbon Materials Granada, SPAIN, 2012, Granada, Spain
Communication dans un congrès hal-03966084 v1
Image document

Electrical characterization of PiN diodes fabricated on a p layer selectively grown by VLS transport

Nicolas Thierry-Jebali , Mihai Lazar , Arthur Vo-Ha , Davy Carole , Véronique Soulière et al.
Proceedings of the 2012 European Conference on Silicon Carbide and Related Materials ECSCRM, Sep 2012, Saint-Pétersbourg, Russia. 4p
Communication dans un congrès hal-04366810 v1
Image document

Design of an integrated power converter in Wide Band Gap for harsh environments

Jean-François Mogniotte , Dominique Tournier , Pascal Bevilacqua , Philippe Godignon , Dominique Planson
Conference on Integrated Power Electronics systems, Mar 2012, Nuremberg, Germany
Communication dans un congrès hal-02124203 v1

Electrical characteristics of SiC UV-Photodetector device : from the p-i-n structure behaviour to the Junction Barrier Schottky structure behaviour

Stéphane Biondo , Mihai Lazar , Laurent Ottaviani , Wilfried Vervisch , Olivier Palais et al.
HeteroSiC & WASMPE 2011, Jun 2011, Tours, France. pp.114-117, ⟨10.4028/www.scientific.net/MSF.711.114⟩
Communication dans un congrès hal-00661511 v1
Image document

Pressureless Silver Sintering Die-Attach for SiC Power Devices

Stanislas Hascoët , Cyril Buttay , Dominique Planson , Rodica Chiriac , Amandine Masson
CSCRM, Sep 2012, Saint-Pétersbourg, Russia. 2p
Communication dans un congrès hal-00759987 v2
Image document

Thyristors GTO haute tension en carbure de silicium avec terminaison JTE gravée

Sigo Scharnholz , Gontran Pâques , Bertrand Vergne , Claudia Maurer , Dominique Planson et al.
Electronique de Puissance du Futur 2012, Jul 2012, Bordeaux, France
Communication dans un congrès hal-04423483 v1
Image document

Investigations on Ni-Ti-Al ohmic contacts obtained on p-type 4H-SiC

Farah Laariedh , Mihai Lazar , Pierre Cremilleu , Jean-Louis Leclercq , Dominique Planson
HeteroSiC & WASMPE 2011, Jun 2011, Tours, France. pp.169-173, ⟨10.4028/www.scientific.net/MSF.711.169⟩
Communication dans un congrès hal-00661507 v1
Image document

Protections périphériques de diodes bipolaires 10 kV en SiC-4H

Duy Minh Nguyen , Runhua Huang , Bertrand Vergne , Pascal Bevilacqua , Philippe Godignon et al.
14ème Conférence Electronique de Puissance du Futur (EPF 2012), Jul 2012, Bordeaux, France
Communication dans un congrès hal-04560471 v1
Image document

Evaluation of silver-sintering die attach

Wissam Sabbah , Raphaël Riva , Stanislas Hascoët , Cyril Buttay , Stephane Azzopardi et al.
7th CIPS, Mar 2012, Nuremberg, Germany. pp.237-243
Communication dans un congrès hal-00707733 v1
Image document

Towards Very High Voltage SiC Power Devices

Dominique Planson , Pierre Brosselard , Dominique Tournier , L V Phung , C. Brylinski
PRiME 2012-ECS, Oct 2012, Honolulu-Hawaii, United States. ⟨10.1149/05003.0425ecst⟩
Communication dans un congrès hal-02116906 v1
Image document

Report de puce par frittage d'argent - mise en oeuvre et analyse

Amandine Masson , Wissam Sabbah , Raphaël Riva , Cyril Buttay , Stephane Azzopardi et al.
14ème EPF, Jul 2012, Bordeaux, France. pp.CD (ref 61)
Communication dans un congrès hal-00729156 v1
Image document

Diode PiN 6500V en SiC-4H

Pierre Brosselard , Runhua Huang , Duy Minh Nguyen , Dominique Planson , Lionel Dupuy et al.
14ème EPF, Jul 2012, Bordeaux, France. 4 p
Communication dans un congrès hal-04573111 v1
Image document

SIMS analyses applied to open an optical window in 4H-SiC devices for electro-optical measurements

Mihai Lazar , François Jomard , Duy Minh Nguyen , Christophe Raynaud , Gontran Pâques et al.
ICSCRM, Sep 2011, Cleveland, United States
Communication dans un congrès hal-00747300 v1
Image document

600 V PiN diodes fabricated using on-axis 4H silicon carbide

Gabriel Civrac , Farah Laariedh , Nicolas Thierry-Jebali , Mihai Lazar , Dominique Planson et al.
International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), Sep 2011, Cleveland, United States. pp.969-972, ⟨10.4028/www.scientific.net/MSF.717-720.969⟩
Communication dans un congrès hal-00747295 v1
Image document

Design and characterization of a novel 3.3 kV 4H-SiC JFET

Florian Chevalier , Pierre Brosselard , D. Tournier , Grégory Grosset , Lionel Dupuy et al.
Proceedings of the 2012 European Conference on Silicon Carbide and Related Materials ECSCRM, Sep 2012, Saint-Pétersbourg, Russia. 4p
Communication dans un congrès hal-04048180 v1
Image document

Edge termination design improvements for 10 kV 4H-SiC bipolar diodes

D M Nguyen , R Huang , L V Phung , Maxime Berthou , P Godignon et al.
European Conference on Silicon Carbide and Related Materials 2012, Sep 2012, Saint-Pétersbourg, Russia
Communication dans un congrès hal-03316271 v1
Image document

Réalisation et caractérisation de diodes Schottky en diamant monocristallin protégées par plaque de champ sur Si3N4

Fabien Thion , Karine Isoird , Dominique Planson , Marie-Laure Locatelli , Henri Schneider et al.
14ème EPF, Jul 2012, Bordeaux, France. 4 p
Communication dans un congrès hal-01005917 v1
Image document

PASChAC, système automatisé de caractérisation de composants sur wafer

Bertrand Vergne , Gontran Pâques , Claudia Maurer , Sigo Scharnholz , Pierre Brosselard et al.
Electronique de Puissance du Futur 2012, Jul 2012, Bordeaux, France
Communication dans un congrès hal-02282734 v1

Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications

Dominique Tournier , Pierre Brosselard , Christophe Raynaud , Mihai Lazar , Hervé Morel et al.
CIMA, Mar 2011, Beyrouth, Lebanon. pp.CD
Communication dans un congrès hal-00661500 v1
Image document

Réalisation de contact ohmique sur SiC-4H type P

Farah Laariedh , Mihai Lazar , Pierre Cremillieu , Jean -Louis Leclercq , Dominique Planson
JNRDM2011, May 2011, Paris, France
Communication dans un congrès hal-04560246 v1

OBIC measurements on avalanche diodes in 4H-SiC for the determination of impact ionization coefficients

Duy Minh Nguyen , Christophe Raynaud , Mihai Lazar , Gontran Pâques , Sigo Scharnholz et al.
CSCRM, Sep 2011, Cleveland, United States
Communication dans un congrès hal-00747298 v1

Avalanche Diodes with Low Temperature Dependence in 4H-SiC Suitable for Parallel Protection

Duy Minh Nguyen , Gontran Pâques , Nicolas Dheilly , Christophe Raynaud , Dominique Tournier et al.
CSCRM, Aug 2010, Oslo, Norway
Communication dans un congrès hal-00661470 v1

Parallel and serial association of SiC light triggered thyristors

Nicolas Dheilly , Gontran Pâques , Sigo Scharnholz , Dominique Planson
HeteroSiC & WASMPE 2011, Jun 2011, Tours, France
Communication dans un congrès hal-00661520 v1
Image document

Pulse characterization of optically triggered SiC thyristors

Nicolas Dheilly , Gontran Pâques , Sigo Scharnholz , Dominique Planson
International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM'2011), Philipp Neudeck, Sep 2011, Cleveland, United States. pp.FR-1A-3
Communication dans un congrès hal-00747341 v1
Image document

Influence of the Masking Material and Geometry on the 4H-SiC RIE Etched Surface State

Mihai Lazar , Fabrice Enoch , Farah Laariedh , Dominique Planson , Pierre Brosselard
CSCRM, Aug 2010, Oslo, Norway. pp.477-480, ⟨10.4028/www.scientific.net/MSF.679-680.477⟩
Communication dans un congrès hal-00661443 v1
Image document

Influence of P+ layer parameters on 4H-SiC UV PiN photodetector characteristics

Laurent Ottaviani , Stéphane Biondo , Mihai Lazar , Wilfried Vervisch , Julian Duchaine et al.
WOCSDICE, May 2011, Catania, Italy. pp.181
Communication dans un congrès hal-00661522 v1

Perspectives on SiC and III-N Based Devices for Power Electronics

Christian Brylinski , Dominique Planson
220th ECS Meeting, The Electrochemical Society, Oct 2011, Boston, United States. pp.139-152, ⟨10.1149/1.3631492⟩
Communication dans un congrès hal-02865456 v1
Image document

Investigation of Epitaxial SiC PiN Diodes with Variable Mesa Height

Gontran Pâques , Nicolas Dheilly , Dominique Planson , Sigo Scharnholz , Rik W. de Doncker et al.
European Conference on Silicon Carbide and Related Materials ECSCRM-2010, Aug 2010, Oslo (Norway), Norway
Communication dans un congrès hal-04349694 v1
Image document

Optical triggering of 4H-SiC thyristors with a 365 nm UV LED

Nicolas Dheilly , Gontran Pâques , Dominique Planson , P Bevilacqua , S Scharnholz
European Conference on Silicon Carbide and Related Materials ECSCRM-2010, Aug 2010, Oslo (Norway), Norway. ⟨10.4028/www.scientific.net/MSF.679-680.690⟩
Communication dans un congrès hal-03990671 v1
Image document

Protection périphérique pour composants de puissance en diamant

Fabien Thion , Karine Isoird , Dominique Planson , Marie-Laure Locatelli
13ème EPF, Jun 2010, Saint-Nazaire, France. 4p
Communication dans un congrès hal-00618708 v1

A Step Toward High Temperature Intelligent Power Modules Using 1.5kV SiC-BJT

Dominique Tournier , Pascal Bevilacqua , Pierre Brosselard , Dominique Planson
CSCRM, Oct 2009, Nuremberg, Germany. pp.1155-1158, ⟨10.4028/www.scientific.net/MSF.645-648.1155⟩
Communication dans un congrès hal-00496976 v1

Réalisation de Diodes SiC Simples pour l'Etude de Passivations

Gontran Pâques , Sigo Scharnholz , Jens-Peter Konrath , Bertrand Vergne , Nicolas Dheilly et al.
13ème EPF, Jun 2010, Saint-Nazaire, France
Communication dans un congrès hal-00618701 v1
Image document

Graded Etched Junction Termination for SiC Thyristors

Gontran Pâques , Nicolas Dheilly , Dominique Planson , Rik W. de Doncker , Sigo Scharnholz
European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), Aug 2010, Oslo, Norway
Communication dans un congrès hal-04347104 v1

SiC BJT driver applied to a 2 kW inverter: Performances and limitations

Dominique Tournier , Pascal Bevilacqua , Pierre Brosselard , Dominique Planson , Bruno Allard
6th CIPS, Mar 2010, Nuremberg, Germany
Communication dans un congrès hal-00579223 v1
Image document

Simulation and design of junction termination structures for diamond Schottky diodes

Fabien Thion , Karine Isoird , Dominique Planson , M-L Locatelli , H Ding
European Conference on Diamond Diamond-like Materials Carbon Nanotubes and Nitrides (DIAMOND 2010), Sep 2010, Budapest, Hungary
Communication dans un congrès hal-03656932 v1

Chambre à Vide de Caractérisation Haute Tension de Composants Semiconducteurs Nus

Bertrand Vergne , Gontran Pâques , Jens-Peter Konrath , Sigo Scharnholz , Nicolas Dheilly et al.
13ème EPF, Jun 2010, Saint-Nazaire, France
Communication dans un congrès hal-00618684 v1

Conception d'une protection périphérique originale pour composants bipolaires en carbure de silicium (SiC)

Nicolas Dheilly , Dominique Planson , Gontran Pâques , Sigo Scharnholz
13ème EPF, Jun 2010, Saint-Nazaire, France
Communication dans un congrès hal-00618709 v1
Image document

State of the art of High Temperature Power Electronics

Cyril Buttay , Dominique Planson , Bruno Allard , Dominique Bergogne , Pascal Bevilacqua et al.
Microtherm, Jun 2009, Lodz, Poland. pp.8-17
Communication dans un congrès hal-00413349 v1

Temperature Dependence lifetime measurements on 3.3kV 4H-SiC PiN Diodes using OCVD Technique

Nicolas Dheilly , Dominique Planson , Pierre Brosselard , Hassan Jawad , Pascal Bevilacqua et al.
ECSCRM European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelone, Spain. pp.703-706, ⟨10.4028/www.scientific.net/MSF.615-617.703⟩
Communication dans un congrès hal-00391369 v1
Image document

SiC Power Semiconductor Devices for new Applications in Power Electronics

Dominique Planson , Dominique Tournier , Pascal Bevilacqua , Nicolas Dheilly , Hervé Morel et al.
13th IEEE PEMC, Sep 2008, Poznan, Poland. pp.2457 - 2463, ⟨10.1109/EPEPEMC.2008.4635632⟩
Communication dans un congrès hal-00373016 v1

Normally-on devices and circuits, SiC and high temperature : using SiCJFETs in power converters

Dominique Bergogne , Hervé Morel , Dominique Tournier , Bruno Allard , Dominique Planson et al.
5th CIPS, Mar 2008, Nuremberg, Germany. pp.08.2
Communication dans un congrès hal-00372982 v1

Current limiting with SiC JFET structures

Dominique Tournier , Dominique Bergogne , Asif Hamoud , Dominique Planson , Rami Mousa et al.
5th CIPS, Mar 2008, Nuremberg, Germany. pp.08.5
Communication dans un congrès hal-00373046 v1
Image document

Characterization of 4H-SiC junction barrier Schottky diodes by admittance vs. temperature analyses

Christophe Raynaud , D M Nguyen , Pierre Brosselard , A Pérez-Tomás , Dominique Planson et al.
European Conference on Silicon Carbide and Related Materials ECSCRM 2008, Sep 2008, Barcelone, Spain
Communication dans un congrès hal-03331775 v1

Modeling and high temperature characterization of SiC-JFET

Rami Mousa , Dominique Planson , Hervé Morel , Bruno Allard , Christophe Raynaud
IEEE PESC, Jun 2008, Rhodes, Greece. pp.3111 - 3117, ⟨10.1109/PESC.2008.4592430⟩
Communication dans un congrès hal-00369420 v1
Image document

Composant de protection série en SiC 450A de forte densité de puissance

D. Tournier , Pascal Bevilacqua , Hervé Morel , Dominique Planson , Pierre Brosselard et al.
12ème colloque Electronique de Puissance du Futur, Jul 2008, Tours, France
Communication dans un congrès hal-04624757 v1
Image document

Contact ohmique de faible résistivité sur SiC-4H dopé type-P

M Soueidan , Mihai Lazar , D. Tournier , Dominique Planson , Christophe Raynaud et al.
4eme colloque sur les Matériaux du Génie Electrique, May 2008, Toulouse, France
Communication dans un congrès hal-04606381 v1
Image document

Protection périphérique d’une diode bipolaire SiC-4H. Simulation électrique de JTE à dopage variable

Dominique Planson , Nicolas Dheilly , Pierre Brosselard , D. Tournier
12ème colloque Electronique de Puissance du Futur, Jul 2008, Tours, France
Communication dans un congrès hal-04606517 v1
Image document

Prospective sur les composants de puissance verticaux grand gap (Carbure de Silicium et Diamant) et leurs applications

Michel Mermet-Guyennet , Hervé Morel , Dominique Planson , Henri Schneider , Jocelyn Achard
12e EPF (Electronique de Puissance du Futur), Jul 2008, Tours, France
Communication dans un congrès hal-04606571 v1

SiC JFET for high temperature power switches

Dominique Bergogne , Dominique Tournier , Rami Mousa , Mohsen Shafiee Khoor , Dominique Planson et al.
5th CIPS, Mar 2008, Nuremberg, Germany. pp.08.4
Communication dans un congrès hal-00373058 v1
Image document

New Applications in Power Electronics Based on SiC Power Devices

Hervé Morel , Dominique Bergogne , Dominique Planson , Bruno Allard , Régis Meuret
ICSCRM'2007, Oct 2007, Otsu, Japan. pp.925-930, ⟨10.4028/www.scientific.net/MSF.600-603.925⟩
Communication dans un congrès hal-02958610 v1
Image document

Comparison of electrical properties of ohmic contact realized on p-type 4H-SiC

D M Nguyen , Christophe Raynaud , Mihai Lazar , H Vang , Dominique Planson
ICSCRM'2007, Oct 2007, Otsu, Japan
Communication dans un congrès hal-02961607 v1

Use of Graphite Cap to Reduce Unwanted Post-Implantation Annealing Effects in SiC

Erwan Oliviero , Mihai Lazar , Heu Vang , Christiane Dubois , Pierre Cremilleu et al.
CSCRM, Sep 2006, Newcastle upon Tyne, United Kingdom. pp.611-614, ⟨10.4028/www.scientific.net/MSF.556-557.611⟩
Communication dans un congrès hal-00368931 v1
Image document

Determination of ambipolar lifetime and epilayer thickness of 5 kV SiC bipolar devices by switching transient studies

Tarek Ben Salah , Damien Risaletto , Christophe Raynaud , Kamel Besbes , Dominique Bergogne et al.
ICSCRM'2007, Oct 2007, Otsu, Japan. pp.1031-1034, ⟨10.4028/www.scientific.net/MSF.600-603.1031⟩
Communication dans un congrès hal-02958620 v1
Image document

Towards an integrated inverter based on lateral JFET SiC

J. Gié , Mihai Lazar , Dominique Planson , Dominique Bergogne , Pascal Bevilacqua et al.
4th CIPS, Jun 2006, Naples, Italy. pp.171-176
Communication dans un congrès hal-00413390 v1
Image document

High temperature operating converter

Dominique Bergogne , Pascal Bevilacqua , Dominique Planson , Hervé Morel
4th CIPS, Jun 2006, Naples, Italy. pp.201-204
Communication dans un congrès hal-00413394 v1
Image document

Diode PiN SiC-4H 1,2kV sur épi-wafer SiCrystal

Heu Vang , Christophe Raynaud , Pierre Brosselard , Mihai Lazar , Pierre Cremillieu et al.
11ème colloque Electronique de Puissance du Futur, Jul 2006, Grenoble, France
Communication dans un congrès hal-04618792 v1
Image document

Deep SiC etching with RIE

Mihai Lazar , Heu Vang , Pierre Brosselard , Christophe Raynaud , Pierre Cremilleu et al.
E-MRS 2006, May 2006, Nice, France. pp.3886392
Communication dans un congrès hal-03305997 v1

Current sensing for SiC Power Devices

Dominique Tournier , Miquel Vellvehi , Philippe Godignon , Josep Montserrat , Dominique Planson et al.
CSCRM, Sep 2005, Pittsburgh, PA, United States. pp.1215-1218
Communication dans un congrès hal-00391433 v1
Image document

Étude de cascodes SiC en vue d’applications électroniques impulsionnelles

Gontran Pâques , Sigo Scharnholz , Heu Vang , Dominique Planson
11ème colloque Electronique de Puissance du Futur, Jul 2006, Grenoble, France
Communication dans un congrès hal-04618765 v1
Image document

Ni-Al Ohmic contact to p-type 4H-SiC

Heu Vang , Mihai Lazar , Pierre Brosselard , Christophe Raynaud , Pierre Cremilleu et al.
2006 Spring Meeting of the European Materials Research Society (E-MRS 2006), May 2006, Nice, France. ⟨10.1016/j.spmi.2006.08.004⟩
Communication dans un congrès hal-03316263 v1
Image document

Optimisation de la structure double RESURF d’un transistor JFET latéral SiC-4H pour le développement de convertisseurs de puissance intégrés

Johnny Gié , Mihai Lazar , Pierre Brosselard , Dominique Planson , Christophe Raynaud
11ème colloque Electronique de Puissance du Futur, Jul 2006, Grenoble, France
Communication dans un congrès hal-04619604 v1
Image document

Onduleur à JFET sans diode de roue libre externe

Dominique Bergogne , Pierre Lefranc , D. Tournier , Pascal Bevilacqua , Dominique Planson et al.
11ème colloque Electronique de Puissance du Futur, Jul 2006, Grenoble, France
Communication dans un congrès hal-04618123 v1

300 °C operating junction temperature inverter leg investigations

Dominique Bergogne , Pascal Bevilacqua , Sabrine M'Rad , Dominique Planson , Hervé Morel et al.
EPE, Sep 2005, Dresden, Germany
Communication dans un congrès hal-00413402 v1
Image document

Gravure RIE profonde du SiC pour la réalisation de composants de puissance

Heu Vang , T. Morel , F. Chaboud , Pierre Brosselard , Pierre Cremillieu et al.
3eme colloque sur les Matériaux du Génie Electrique, Dec 2005, Lyon, France
Communication dans un congrès hal-04620248 v1
Image document

P-type SiC layers formed by VLS induced selective epitaxial growth

Mihai Lazar , C Jacquier , Ch Dubois , Christophe Raynaud , G Ferro et al.
European Conference on Silion Carbide and Related Materials (ECSCRM 2004), Sep 2004, Bologne, Italy
Communication dans un congrès hal-02953086 v1
Image document

HIGH VOLTAGE AND SPECIFIC POWER SILICON CARBIDE DEVICES

Dominique Planson , Marie-Laure Locatelli , Mihai Lazar , Christophe Raynaud , Jean-Pierre Chante et al.
10ème colloque Electronique de Puissance du Futur, Sep 2004, Toulouse, France
Communication dans un congrès hal-04621819 v1
Image document

Silicon Carbide Controlled Current Limiter, Current Limitation Strategies, Foreseen Applications and Benefits

Dominique Planson , Dominique Tournier , Jean-Pierre Chante , Pascal Bevilacqua , Christophe Raynaud et al.
International Power Electronics and Motion Control (IPEMC'04), Aug 2004, Xi'an, China
Communication dans un congrès hal-02468376 v1
Image document

SiC-based current limiter devices

Jean-Pierre Chante , Dominique Tournier , Dominique Planson , Christophe Raynaud , Mihai Lazar et al.
International Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France. pp.951-956, ⟨10.4028/www.scientific.net/MSF.457-460.951⟩
Communication dans un congrès hal-04032970 v1
Image document

Conception d'un transistor JFET 5 kV en SiC-4H

Pierre Brosselard , Dominique Planson , Léa Di Cioccio , Thierry Billon , Sigo Scharnholz et al.
10ème colloque Electronique de Puissance du Futur, Sep 2004, Toulouse, France
Communication dans un congrès hal-04621465 v1
Image document

A 3.5 kV thyristor in 4H-SiC with a JTE periphery

Pierre Brosselard , Thierry Bouchet , Dominique Planson , Sigo Scharnholz , Gontran Pâques et al.
European Conference on Silion Carbide and Related Materials (ECSCRM 2004), Sep 2004, Bologne, Italy
Communication dans un congrès hal-02953080 v1

On chip temperature monitoring of a SiC current limiter

Dominique Tournier , Philippe Godignon , José Millán , Jean-Pierre Chante , Dominique Planson et al.
International Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France
Communication dans un congrès hal-02949618 v1
Image document

Electrothermal simulations of silicon carbide current limiting devices

Dominique Planson , J.P. Chante , M. Lazar , P. Brosselard , Christophe Raynaud et al.
2003 IEEE International Conference on Industrial Technology, Dec 2003, Maribor, Slovenia. pp.1135-1140, ⟨10.1109/ICIT.2003.1290823⟩
Communication dans un congrès hal-02498210 v1
Image document

Active clamping of IGBT: capacitor replaces TRANSIL diodes

Pierre Lefranc , Dominique Bergogne , Dominique Planson , Bruno Allard , Hervé Morel et al.
10th European Conference on Power Electronics and Applications (EPE'2003), Sep 2003, Toulouse, France
Communication dans un congrès hal-02497603 v1
Image document

Design, fabrication and characterisation of 5 kV 4H-SiC p + n planar bipolar diodes protected by junction termination extension

Christophe Raynaud , M. Lazar , Dominique Planson , J.-P Chante , Z. Sassi
International Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France
Communication dans un congrès hal-02498145 v1
Image document

The role of the ion implanted emitter state on 6H-SiC power diodes behaviour. A statistical study.

M Lazar , G Cardinali , C Raynaud , A Poggi , Dominique Planson et al.
International Conference on Silicon Carbide and Related Materials (ICSCRM 2003), Oct 2003, Lyon, France
Communication dans un congrès hal-02941715 v1
Image document

Influence of different peripheral protections on the breakover voltage of a 4H-SiC GTO thyristor

Pierre Brosselard , Volker Zorngiebel , Dominique Planson , Sigo Scharnholz , J.-P Chante et al.
International Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France
Communication dans un congrès hal-02503456 v1

Silicon Carbide specific components for power electronics system protection

J.-P Chante , Dominique Planson , Christophe Raynaud , Marie-Laure Locatelli , M. Lazar et al.
International Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France
Communication dans un congrès hal-02503449 v1
Image document

Current limitation with SiC devices

D Tournier , P. Godignon , Dominique Planson , F. Nallet , J. Millán et al.
10th European Conference on Power Electronics and Applications (EPE'2003), Sep 2003, Toulouse, France
Communication dans un congrès hal-02497590 v1
Image document

Design and simulation of a planar anode GTO thyristor on SiC

Pierre Brosselard , Dominique Planson , Sigo Scharnholz , V. Zorngiebel , Mihai Lazar et al.
CAS (International Semiconductor Conference), Sep 2003, Sinaia, Romania. pp.222, ⟨10.1109/SMICND.2003.1252421⟩
Communication dans un congrès hal-00410085 v1
Image document

Study of suitable dielectric material properties for high electric field and high temperature power semiconductor environment

Marie-Laure Locatelli , Karine Isoird , Sorin Dinculescu , Vincent Bley , Thierry Lebey et al.
10th European Conference on Power Electronics and Applications (EPE'2003), Sep 2003, Toulouse, France
Communication dans un congrès hal-02492270 v1
Image document

Towards the Fabrication and Measurement of High Sensitivity SiC-UV Detectors with Oxide Ramp Termination

G Brezeanu , Philippe Godignon , E Dimitrova , C Raynaud , Dominique Planson et al.
International Conference on Silicon Carbide and Related Materials (ICSCRM 2003), Oct 2003, Lyon, France
Communication dans un congrès hal-02937545 v1
Image document

A New Process for the Fabrication of SiC Power Devices and Systems on SiCOI (Silicon Carbide On Insulator) Substrates

François Templier , Nicolas Daval , Léa Di Cioccio , Daniel Bourgeat , Fabrice Letertre et al.
2002 MRS Fall Meeting, Dec 2002, Boston, United States. ⟨10.1557/PROC-742-K7.9⟩
Communication dans un congrès hal-02298409 v1
Image document

Contact resistivity of Al/Ti ohmic contacts on p-type ion implanted 4H and 6H-SiC

Roberta Nipoti , Francesco Moscatelli , Andrea Scorzoni , Antonella Poggi , Gian Carlo Cardinali et al.
2002 MRS Fall Meeting, Dec 2002, Boston, United States. ⟨10.1557/PROC-742-K6.2⟩
Communication dans un congrès hal-02485106 v1
Image document

OBIC measurements on 1.3 kV 6H-SiC bipolar diodes protected by Junction Lateral Extension

S.R. Wang , Christophe Raynaud , Dominique Planson , Mihai Lazar , Jean-Pierre Chante
European Conference on Silicon Carbide and Related Materials (ECSCRM 2002), Sep 2002, Linköping, Sweden
Communication dans un congrès hal-02464381 v1
Image document

Very low R/sub ON/ measured on 4H-SiC accu-MOSFET high power device

F. Nallet , P. Godignon , Dominique Planson , Christophe Raynaud , J.P. P Chante
14th International Symposium on Power Semiconductor Devices and ICs, Jun 2002, Sante Fe, United States. pp.209-212, ⟨10.1109/ISPSD.2002.1016208⟩
Communication dans un congrès hal-02471269 v1
Image document

Substrat SiCOI : Avancées vers les applications « System on Chip »

Nicolas Daval , François Templier , Fabrice Letertre , Marie-Laure Locatelli , Dominique Planson et al.
EPF2002 - Colloque 2002, Electronique de Puissance du Futur, Nov 2002, Montpellier, France
Communication dans un congrès hal-04400220 v1
Image document

COMPOSANT NνN POUR L'ETUDE DE LA ZCEM (ZONE DE CHARGE D'ESPACE MIXTE) DES TRANSISTORS MOS

Guillaume Verneau , Laurent Aubard , Thierry Bouchet , Jacques Arnould , Pierre Brosselard et al.
Electronique de Puissance du Futur (EPF 2002), Nov 2002, Montpellier (FR), France
Communication dans un congrès hal-04390458 v1
Image document

A 4H-SiC high-power-density VJFET as controlled current limiter

Dominique Tournier , Philippe Godignon , Josep Montserrat , Dominique Planson , Christophe Raynaud et al.
Industry Applications Society (IAS'02), Oct 2002, Pittsburgh (Pennsylvania), United States. pp.2248-2251
Communication dans un congrès hal-02477074 v1

Characterization of a 4H-SiC High Power Density Controlled Current Limiter

Dominique Tournier , Xavier Jorda , Josep Montserrat , Dominique Planson , Christophe Raynaud et al.
European Conference on Silicon Carbide and Related Materials (ECSCRM 2002), Sep 2002, Linköping, Sweden
Communication dans un congrès hal-02458130 v1
Image document

Limiteur de courant à forte densité de puissance en carbure de silicium

Dominique Tournier , Philippe Godignon , Josep Montserrat , Dominique Planson , Christophe Raynaud et al.
Electronique de Puissance du Futur (EPF 2002), Nov 2002, Montpellier (FR), France
Communication dans un congrès hal-04398450 v1

SiC On Insulator as substrate for power Schottky diodes

N. Daval , F Templier , F. Letertre , Dominique Planson , Léa Di Cioccio et al.
European Conference on Silicon Carbide and Related Materials (ECSCRM 2002), Sep 2002, Linköping, Sweden
Communication dans un congrès hal-02464356 v1
Image document

Fabrication and Characterisation of High Voltage SiC-Thyristors

Volker Zorngiebel , S. Scharnholz , E. Spahn , P Brosselard , Jean-Pierre Chante et al.
European Conference on Silicon Carbide and Related Materials (ECSCRM 2002), Sep 2002, Linköping, Sweden
Communication dans un congrès hal-02485104 v1

Study of 6H-SiC high voltage bipolar diodes under reverse biases

Karine Isoird , Mihai Lazar , Laurent Ottaviani , Marie-Laure Locatelli , Christophe Raynaud et al.
European Materials Research Society (E-MRS Spring Meeting) 2001, Jun 2001, Strasbourg, France
Communication dans un congrès hal-03712596 v1
Image document

Study based on the numerical simulation of a 5 kV asymmetrical 4H-SiC thyristor for high power pulses application

N. Arssi , M.L. Locatelli , Dominique Planson , J.P. Chante , V. Zorngiebel et al.
CAS 2001 International Semiconductor Conference, Oct 2001, Sinaia, Romania. pp.341-344, ⟨10.1109/SMICND.2001.967479⟩
Communication dans un congrès hal-02145398 v1
Image document

Simulation study of a new current limiting device : a vertical alpha-SiC etched JFET - Controlled Current Limiter

Dominique Tournier , Phillippe Godignon , Josep Montserrat , Dominique Planson , Jean-Pierre P Chante et al.
ICSCRM, Oct 2001, Tsukuba, Japan
Communication dans un congrès hal-02476207 v1
Image document

Realization of a High Current and Low RON 600V Current Limiting Device

F Nallet , P Godignon , Dominique Planson , Christophe Raynaud , Jean-Pierre P Chante
International Conference on Silicon Carbide and Related Materials, Oct 2001, Tsukuba, Japan
Communication dans un congrès hal-02975963 v1
Image document

4H-SiC bipolar power diodes realized by ion implantation

M. Lazar , Dominique Planson , K. Isoird , Marie-Laure Locatelli , Christophe Raynaud et al.
CAS 2001 International Semiconductor Conference, Oct 2001, Sinaia, Romania. pp.349-352, ⟨10.1109/SMICND.2001.967481⟩
Communication dans un congrès hal-02145397 v1
Image document

A comparative study of high temperature Aluminium post-implantation annealing in 6H and 4H-SiC, non-uniformity temperature effects

M. Lazar , Christophe Raynaud , Dominique Planson , Marie-Laure Locatelli , K. Isoird et al.
ICSCRM, Oct 2001, Tsukuba, Japan
Communication dans un congrès hal-02476227 v1
Image document

Compatibility of VJFET Technology with MESFET Fabrication and Its Interest for System Integration: Fabrication of 6H and 4H-SiC 110 V Lateral MESFET

Dominique Tournier , Phillippe Godignon , Josep Montserrat , Dominique Planson , Jean-Pierre P Chante et al.
ICSCRM, Oct 2001, Tsukuba, Japan
Communication dans un congrès hal-02471274 v1
Image document

Study of 4H-SiC high voltage bipolar diodes under reverse biases using electrical and Obic characterization

K Isoird , M Lazar , Marie-Laure Locatelli , Christophe Raynaud , Dominique Planson et al.
ICSCRM, Oct 2001, Tsukuba, Japan
Communication dans un congrès hal-02975956 v1

Bipolar silicon carbide power diodes realized by aluminum implantations and high temperature rf-annealing

Mihai Lazar , Karine Isoird , Laurent Ottaviani , Marie-Laure Locatelli , Christophe Raynaud et al.
43rd Electronic Materials Conference (EMC 2001), Jun 2001, Notre Dame, IN, United States
Communication dans un congrès hal-02275712 v1

Experimental characterization of a 4H-SiC high voltage current limiting device

Franck Nallet , Dominique Planson , Philippe Godignon , Marie-Laure Locatelli , Mihai Lazar et al.
European Materials Society (E-MRS Spring Meeting) 2001, symposium F, Jun 2001, Strasbourg, France
Communication dans un congrès hal-03714731 v1
Image document

Electrical and electrothermal 2D simulations of a 4H-SiC high voltage current limiting device for serial protection applications

F. Nallet , A Sénès , Dominique Planson , M.L. Locatelli , J.P. Chante et al.
3rd International Conference on Power Electronics and Motion Control, Aug 2000, Beijing, China. pp.396-401, ⟨10.1109/IPEMC.2000.885436⟩
Communication dans un congrès hal-04386905 v1
Image document

Electrical and electrothermal 2D simulations of a 4H-SiC high voltage current limiting device for serial protection applications

F. Nallet , A. Senes , Dominique Planson , Marie-Laure Locatelli , J.P. Chante et al.
12th International Symposium on Power Semiconductor Devices & ICs. Proceedings, May 2000, Toulouse, France. pp.287-290, ⟨10.1109/ISPSD.2000.856827⟩
Communication dans un congrès hal-02972084 v1
Image document

High Electrical Activation of Aluminium and Nitrogen Implanted in 6H-SiC at Room Temperature by RF Annealing

Mihai Lazar , Laurent Ottaviani , Marie-Laure Locatelli , Christophe Raynaud , Dominique Planson et al.
European Conference on Silicon Carbide and Related Materials 2000 (ECSCRM 2000), Sep 2000, Kloster Banz, Germany. pp.MoP-72
Communication dans un congrès hal-02151711 v1
Image document

Evaluation of losses in a switching cell using the finite element method. Comparison between silicon and silicon carbide components

Dominique Planson , S. Margenat , F. Nallet , Hervé Morel , Marie-Laure Locatelli et al.
3rd International Conference on Power Electronics and Motion Control, Aug 2000, Beijing, China. pp.241-245, ⟨10.1109/IPEMC.2000.885364⟩
Communication dans un congrès hal-04386919 v1

Silicon carbide power devices

J.P. Chante , M.L. Locatelli , Dominique Planson , L. Ottaviani , E. Morvan et al.
1998 International Semiconductor Conference. CAS'98 Proceedings, Oct 1998, Sinaia, Romania. pp.125-134, ⟨10.1109/SMICND.1998.732305⟩
Communication dans un congrès hal-04277218 v1
Image document

The negative temperature coefficient of the breakdown voltage of SiC p-n structures and deep centers in SiC

A A Lebedev , A M Strel'Chuk , S. Ortolland , Christophe Raynaud , Marie-Laure Locatelli et al.
International Conference on Silicon Carbide and Related Materials ICSCRM'95, Sep 1995, Kyoto, Japan
Communication dans un congrès hal-03712441 v1
Image document

A SIMULATION SYSTEM FOR A POWER INSULATED GATE BIPOLAR TRANSISTOR (IGBT) WITH TSUPREM-4 AND MEDICI SIMULATORS

Shan-Qi Zhao , Dominique Planson , Jean-Pierre Chante
7th European Simulation Symposium (ESS-1995), Oct 1995, Erlangen-Nuremberg, Germany
Communication dans un congrès hal-02968512 v1
Image document

Study of Silicon Carbide high voltage ability: experimental results on expitaxial-emitter and implanted-emitter diodes

Marie-Laure Locatelli , Sylvie Ortolland , Frédéric Lanois , Dominique Planson , Thierry Billon et al.
International Seminar on Silicon Carbide Semiconductor and SiC-based devices, Sep 1995, Novgorod, Russia
Communication dans un congrès hal-02972067 v1
Image document

Realization and characterization of vertical PIN diode on 100 diamond

Florent Sevely , Josiane Tasselli , Karine Isoird , Luong Viêt Phung , Camille Sonneville et al.
33rd International Conference on Diamond and Carbon Materials, Sep 2023, Palma, Spain. , 2023
Poster de conférence hal-04193251 v1

Optical Beam Induced Current Measurements: principles and applications to SiC device characterisation

Christophe Raynaud , Duy Minh Nguyen , Nicolas Dheilly , Dominique Tournier , Pierre Brosselard et al.
Peter Friedrichs, Tsunenobu Kimoto, Lothar Ley, Gerhard Pensl. Silicon Carbide: Volume 1: Growth, Defects, and Novel Applications, Wiley, 319-340 (chapitre 12), 2009
Chapitre d'ouvrage hal-00661529 v1

Silicon carbide applications in power electronics

Marie-Laure Locatelli , Dominique Planson
Robert Perret. Power Electronics Semiconductor Devices, Wiley-ISTE, pp.185-265, 2009
Chapitre d'ouvrage hal-00661525 v1

Applications du carbure de silicium en électronique de puissance

Marie-Laure Locatelli , Dominique Planson
Robert Perret. Mise en oeuvre des composants électroniques de puissance, HERMES, pp.243-324, 2003
Chapitre d'ouvrage hal-03925159 v1