Franck BASSANI

128
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Publications

Publications

Scalable InAs/InGaAs DWELL structures for broadband infrared emission spanning the E- to O-band

Driss Mouloua , Mickael Martin , Bouraoui Ilahi , Sebastien Cavalaglio , Nicolas Chauvin et al.
Scientific Reports, 2025, 15 (1), pp.37470. ⟨10.1038/s41598-025-21226-9⟩
Article dans une revue hal-05390183 v1
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Study of zinc doped In0.53Ga0.47As/InP/InAlAs/InP heterostructures by time-of-flight; magnetic secondary ion spectrometry and high-energy x-ray photoelectron spectroscopy

G Tsamo Tagougue , M Veillerot , E Martinez , V Thoréton , M Martin et al.
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics, 2025, 43, pp.033204. ⟨10.1116/6.0004489⟩
Article dans une revue hal-05385828 v1
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Study of In0.53Ga0.47As/InP interface in III–V heterostructures by coupling monoatomic argon sputtering and high-energy x-ray photoelectron spectroscopy

G. Tsamo Tagougue , E. Martinez , M. Veillerot , V. Thoréton , M. Martin et al.
Journal of Applied Physics, 2025, 138 (2), pp.025301. ⟨10.1063/5.0270597⟩
Article dans une revue hal-05351110 v1
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Plasma-enhanced atomic layer deposition of silicon nitride thin films with different substrate biasing using Diiodosilane precursor

Mohammed Zeghouane , Gauthier Lefevre , Sébastien Labau , Mohammed-Bilal Hachemi , Franck Bassani et al.
Materials Science in Semiconductor Processing, 2024, 184 (5), pp.108851. ⟨10.1016/j.mssp.2024.108851⟩
Article dans une revue hal-04728254 v1
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Spectroscopic investigation of oxidation in GaSe 2D layered materials

Badreddine Smiri , Rémy Bernardin , Mickael Martin , Hervé Roussel , Jean Luc Deschanvres et al.
Microelectronic Engineering, 2024, 294, pp.112256. ⟨10.1016/j.mee.2024.112256⟩
Article dans une revue hal-04698462 v1
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Impact of Nitrogen Concentration and Post‐Deposition Annealing on Electrical Properties of AlON/Etched N‐GaN MOS Capacitors

Pedro Fernandes Paes Pinto Rocha , Mohammed Zeghouane , Sarah Boubenia , Franck Bassani , Laura Vauche et al.
Advanced Electronic Materials, 2023, 10 (3), ⟨10.1002/aelm.202300528⟩
Article dans une revue hal-04509895 v1

Synthesis of AlOxNy thin films using a two-step PE-ALD process

Mohammed Zeghouane , Pedro Fernandes Paes Pinto Rocha , Sarah Boubenia , Franck Bassani , Gauthier Lefevre et al.
AIP Advances, 2023, 13 (8), ⟨10.1063/5.0154468⟩
Article dans une revue hal-04216905 v1
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200 mm-scale growth of 2D layered GaSe with preferential orientation

Mickaël Martin , Pascal Pochet , Hanako Okuno , Carlos Alvarez , Edith Bellet-Amalric et al.
APL Materials, 2022, 10 (5), pp.051106. ⟨10.1063/5.0087684⟩
Article dans une revue hal-03694297 v1

Enhancing the incorporation of Sn in vapor–liquid–solid GeSn nanowires by modulation of the droplet composition

Mohammed Zeghouane , Hadi Hijazi , Franck Bassani , Gauthier Lefevre , Eugenie Martinez et al.
Nanotechnology, 2022, 33 (24), pp.245605. ⟨10.1088/1361-6528/ac5c12⟩
Article dans une revue hal-03867559 v1

Influence of substrate biasing on structural, chemical and electrical properties of Al 2 O 3 thin films deposited by PEALD

S Boubenia , G Lefevre , M Legallais , S Labau , F Bassani et al.
Semiconductor Science and Technology, 2022, 37 (6), pp.065001. ⟨10.1088/1361-6641/ac6287⟩
Article dans une revue hal-03867566 v1

Impact of Substrate Biasing During AlN Growth by PEALD on Al 2 O 3 /AlN/GaN MOS Capacitors

Maxime Legallais , Gauthier Lefevre , Simon Martin , Sébastien Labau , Franck Bassani et al.
Advanced Materials Interfaces, 2022, 9 (5), ⟨10.1002/admi.202101731⟩
Article dans une revue hal-04222343 v1

AlGaInAs Multi-Quantum Well Lasers on Silicon-on-Insulator Photonic Integrated Circuits Based on InP-Seed-Bonding and Epitaxial Regrowth

Claire Besancon , Delphine Néel , Dalila Make , Joan Manel Ramírez , Giancarlo Cerulo et al.
Applied Sciences, 2022, 12 (1), pp.263. ⟨10.3390/app12010263⟩
Article dans une revue hal-03867618 v1
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Smooth plasma etching of GeSn nanowires for gate-all-around field effect transistors

E Eustache , M A Mahjoub , Y Guerfi , S Labau , J Aubin et al.
Semiconductor Science and Technology, 2021, 36 (6), pp.065018. ⟨10.1088/1361-6641/abfbb5⟩
Article dans une revue hal-03375044 v1
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Morphology Transition of ZnO from Thin Film to Nanowires on Silicon and its Correlated Enhanced Zinc Polarity Uniformity and Piezoelectric Responses

Quang Chieu Bui , Gustavo Ardila , Eirini Sarigiannidou , Hervé Roussel , Carmen Jiménez et al.
ACS Applied Materials & Interfaces, 2020, 12 (26), pp.29583-29593. ⟨10.1021/acsami.0c04112⟩
Article dans une revue hal-02917568 v1

Kinetic study of hydrogen lateral diffusion at high temperature in a directly-bonded InP-SiO 2 /Si substrate

C Besancon , F. Fournel , L Sanchez , N. Vaissiere , C. Dupre et al.
Nanotechnology, 2020, 31 (13), pp.135205. ⟨10.1088/1361-6528/ab5ce5⟩
Article dans une revue hal-02917600 v1
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Improvement of AlN Film Quality Using Plasma Enhanced Atomic Layer Deposition with Substrate Biasing

Maxime Legallais , Hussein Mehdi , Sylvain David , Franck Bassani , Sébastien Labau et al.
ACS Applied Materials & Interfaces, 2020, 12 (35), pp.39870-39880. ⟨10.1021/acsami.0c10515⟩
Article dans une revue hal-03030507 v1

Comparison of AlGaInAs-Based Laser Behavior Grown on Hybrid InP-SiO₂/Si and InP Substrates

Claire Besancon , Giancarlo Cerulo , Delphine Néel , Nicolas Vaissière , Dalila Make et al.
IEEE Photonics Technology Letters, 2020, 32 (8), pp.469-472. ⟨10.1109/LPT.2020.2979254⟩
Article dans une revue hal-02917586 v1
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Impact of droplet composition on the nucleation rate and morphology of vapor-liquid-solid GeSn nanowires

Hadi Hijazi , Mohammed Zeghouane , Franck Bassani , Pascal Gentile , Bassem Salem et al.
Nanotechnology, 2020, 31 (40), pp.405602. ⟨10.1088/1361-6528/ab99f6⟩
Article dans une revue hal-02917562 v1

Epitaxial Growth of High‐Quality AlGaInAs‐Based Active Structures on a Directly Bonded InP‐SiO 2 /Si Substrate

Claire Besancon , Nicolas Vaissière , Cecilia Dupre , Frank Fournel , Loic Sanchez et al.
Physica Status Solidi A (applications and materials science), 2019, 217 (3), pp.1900523. ⟨10.1002/pssa.201900523⟩
Article dans une revue hal-02917597 v1
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InAs/GaSb thin layers directly grown on nominal (0 0 1)-Si substrate by MOVPE for the fabrication of InAs FINFET

T. Cerba , P. Hauchecorne , M. Martin , J. Moeyaert , R. Alcotte et al.
Journal of Crystal Growth, 2019, 510, pp.18-22. ⟨10.1016/j.jcrysgro.2018.12.014⟩
Article dans une revue hal-02055424 v1
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Formation mechanisms of ZnO nanowires on polycrystalline Au seed layers for piezoelectric applications

Clément Lausecker , Bassem Salem , Xavier Baillin , Hervé Roussel , Eirini Sarigiannidou et al.
Nanotechnology, 2019, 30 (34), pp.345601. ⟨10.1088/1361-6528/ab1d6e⟩
Article dans une revue hal-02151193 v1

Impact of Wet Treatments on the Electrical Performance of Ge 0.9 Sn 0.1 -Based p-MOS Capacitors

Mohamed Aymen Mahjoub , Thibault Haffner , Sébastien Labau , Etienne Eustache , Joris Aubin et al.
ACS Applied Electronic Materials, 2019, 1 (2), pp.260-268. ⟨10.1021/acsaelm.8b00099⟩
Article dans une revue hal-02051071 v1
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Suppression of self-organized surface nanopatterning on GaSb/InAs multilayers induced by low energy oxygen ion bombardment by using simultaneously sample rotation and oxygen flooding

Georges Beainy , Tiphaine Cerba , Franck Bassani , Mickaël Martin , Thierry Baron et al.
Applied Surface Science, 2018, 441, pp.218-222. ⟨10.1016/j.apsusc.2018.02.009⟩
Article dans une revue hal-01947878 v1

Low temperature growth and physical properties of InAs thin films grown on Si, GaAs and In 0.53 Ga 0.47 As template

Reynald Alcotte , Mickaël Martin , Jeremy Moeyaert , Patrice Gergaud , Sylvain David et al.
Thin Solid Films, 2018, 645, pp.119-123. ⟨10.1016/j.tsf.2017.10.006⟩
Article dans une revue hal-01948078 v1

Direct examination of Si atoms spatial distribution and clustering in GaAs thin films with atom probe tomography

Georges Beainy , Reynald Alcotte , Franck Bassani , Mickaël Martin , Adeline Grenier et al.
Scripta Materialia, 2018, 153, pp.109-113. ⟨10.1016/j.scriptamat.2018.05.007⟩
Article dans une revue hal-01947850 v1

Anti phase boundary free GaSb layer grown on 300 mm (001)-Si substrate by metal organic chemical vapor deposition

T. Cerba , M. Martin , J. Moeyaert , S. David , J. Rouvière et al.
Thin Solid Films, 2018, 645, pp.5-9. ⟨10.1016/j.tsf.2017.10.024⟩
Article dans une revue hal-01954336 v1

Combined ToF-SIMS and AFM protocol for accurate 3D chemical analysis and data visualization

Maiglid Moreno , Isabelle Mouton , Nicolas Chevalier , Jean-Paul Barnes , Franck Bassani et al.
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics, 2018, 36 (3), pp.324 - 327. ⟨10.1116/1.5019464⟩
Article dans une revue hal-01858392 v1

Growth of Ge 1− x Sn x Nanowires by Chemical Vapor Deposition via Vapor-Liquid-Solid Mechanism Using GeH 4 and SnCl 4

Thibault Haffner , Mohammed Zeghouane , Franck Bassani , Pascal Gentile , Alban Gassenq et al.
Physica Status Solidi A (applications and materials science), 2018, 215 (1), pp.1700743. ⟨10.1002/pssa.201700743⟩
Article dans une revue hal-01948093 v1
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Sub-10 nm plasma nanopatterning of InGaAs with nearly vertical and smooth sidewalls for advanced n-fin field effect transistors on silicon

Fares Chouchane , Bassem Salem , Guillaume Gay , Mickaël Martin , Erwine Pargon et al.
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics, 2017, 35 (2), ⟨10.1116/1.4975796⟩
Article dans une revue hal-01891230 v1
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SIMS depth profiling and topography studies of repetitive III–V trenches under low energy oxygen ion beam sputtering

Viktoriia Gorbenko , Franck Bassani , Alexandre Merkulov , Thierry Baron , Mickaël Martin et al.
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics, 2016, 34 (3), pp.03H131. ⟨10.1116/1.4944632⟩
Article dans une revue hal-01881953 v1

Spatially correlated structural and optical characterization of a single InGaAs quantum well fin selectively grown on Si by microscopy and cathodoluminescence techniques

S. David , J. Roque , N. Rochat , N. Bernier , L. Piot et al.
APL Materials, 2016, 4 (5), ⟨10.1063/1.4949761⟩
Article dans une revue hal-01881951 v1

Toward the III-V/Si co-integration by controlling the biatomic steps on hydrogenated Si(001)

Mickael Martin , Damien Caliste , R. Cipro , R. Alcotte , J. Moeyaert et al.
Applied Physics Letters, 2016, 109 (25), pp.253103. ⟨10.1063/1.4972394⟩
Article dans une revue cea-01851579 v1

Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobility

R. Alcotte , M. Martin , J. Moeyaert , R. Cipro , S. David et al.
APL Materials, 2016, 4 (4), pp.046101. ⟨10.1063/1.4945586⟩
Article dans une revue hal-02053234 v1

Fabrication and electrical characterization of homo- and hetero-structure Si/SiGe nanowire Tunnel Field Effect Transistor grown by vapor–liquid–solid mechanism

V. Brouzet , B. Salem , P. Periwal , R. Alcotte , F. Chouchane et al.
Solid-State Electronics, 2016, 118, pp.26 - 29. ⟨10.1016/j.sse.2016.01.005⟩
Article dans une revue istex hal-01882006 v1

Threading dislocations in GaAs epitaxial layers on various thickness Ge buffers on 300 mm Si substrates

Y. Bogumilowicz , M. Hartmann , N. Rochat , A. Salaün , M. Martin et al.
Journal of Crystal Growth, 2016, 453, pp.180 - 187. ⟨10.1016/j.jcrysgro.2016.08.022⟩
Article dans une revue istex hal-01881949 v1

3D Auger quantitative depth profiling of individual nanoscaled III–V heterostructures

W. Hourani , V. Gorbenko , J. Barnes , C. Guedj , R. Cipro et al.
Journal of Electron Spectroscopy and Related Phenomena, 2016, 213, pp.1 - 10. ⟨10.1016/j.elspec.2016.09.008⟩
Article dans une revue istex hal-01881946 v1

Chemical depth profiling and 3D reconstruction of III-V heterostructures selectively grown on non-planar Si substrates by MOCVD

V. Gorbenko , M. Veillerot , A. Grenier , G. Audoit , W. Hourani et al.
physica status solidi (RRL) - Rapid Research Letters (pss RRL), 2015, 9 (3), pp.202-205. ⟨10.1002/pssr.201409544⟩
Article dans une revue istex hal-01991901 v1
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Carrier trapping study on a Ge nanocrystal by two-pass lift mode electrostatic force microscopy

Zhen Lin , P. Brunkov , F. Bassani , Armel Descamps , C. O Dwyer et al.
Materials Research Express, 2015, 2 (3), ⟨10.1088/2053-1591/2/3/035001⟩
Article dans une revue hal-01489411 v1

Nanoscale elemental quantification in heterostructured SiGe nanowires

W. Hourani , P. Periwal , F. Bassani , T. Baron , G. Patriarche et al.
Nanoscale, 2015, 7 (18), pp.8544-8553. ⟨10.1039/c4nr07503j⟩
Article dans une revue hal-01991885 v1
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Anti-phase boundaries–Free GaAs epilayers on “quasi-nominal” Ge-buffered silicon substrates

Y. Bogumilowicz , J. Hartmann , R. Cipro , R. Alcotte , M. Martin et al.
Applied Physics Letters, 2015, 107 (21), pp.212105. ⟨10.1063/1.4935943⟩
Article dans une revue hal-01991879 v1

Fabrication and characterization of silicon nanowire p-i-n MOS gated diode for use as p-type tunnel FET

V. Brouzet , B. Salem , P. Periwal , G. Rosaz , T. Baron et al.
Applied physics. A, Materials science & processing, 2015, 121 (3), pp.1285-1290. ⟨10.1007/s00339-015-9507-3⟩
Article dans une revue hal-01947669 v1

Chemical characterization of III–V heterostructures in 3D architecture

V. Gorbenko , A. Grenier , G. Audoit , R. Cipro , M. Martin et al.
Microelectronic Engineering, 2015, 147, pp.219-222. ⟨10.1016/j.mee.2015.04.107⟩
Article dans une revue istex hal-01991881 v1

Control of heterointerface and strain mapping in Au catalyzed axial Si-Si1-xGex nanowires

P. Periwal , G. Patriarche , L. Latu-Romain , B. Salem , F. Bassani et al.
MRS Proceedings, 2014, 1707
Article dans une revue hal-01991978 v1

Control of the interfacial abruptness of Au-catalyzed Si-Si 1−x Ge x heterostructured nanowires grown by vapor–liquid–solid

Priyanka Periwal , Thierry Baron , Laurence Latu-Romain , Bassem Salem , Franck Bassani et al.
Journal of Vacuum Science & Technology A, 2014, 32 (3), ⟨10.1116/1.4867264⟩
Article dans une revue hal-01869721 v1

Nanoscale Surface and Sub-Surface Chemical Analysis of SiGe Nanowires

W. Hourani , E. Martinez , P. Periwal , G. Patriarche , F. Bassani et al.
Microscopy and Microanalysis, 2014, 20 (S3), pp.2052-2053. ⟨10.1017/S1431927614011994⟩
Article dans une revue hal-01991975 v1

Interfacial abruptness in axial Si/SiGe heterostructures in nanowires probed by scanning capacitance microscopy

Laurence Latu-Romain , P. Periwal , F. Bassani , G. Patriarche , V. Brouzet et al.
Physica Status Solidi A (applications and materials science), 2014, 211 (2), pp.509 - 513. ⟨10.1002/pssa.201300208⟩
Article dans une revue istex hal-01869723 v1

Interfacial abruptness in axial Si/SiGe heterostructures in nanowires probed by scanning capacitance microscopy

P. Periwal , F. Bassani , G. Patriarche , L. Latu-Romain , V. Brouzet et al.
Phys. Status Solidi, 2014, A, pp.1-5
Article dans une revue hal-00950033 v1
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Low defect InGaAs quantum well selectively grown by MOCVD on Si(100) 300 mm wafers for next generation non planar devices

R. Cipro , T. Baron , M. Martin , J. Moeyaert , S. David et al.
Applied Physics Letters, 2014, 104 (26), pp.262103. ⟨10.1063/1.4886404⟩
Article dans une revue hal-01489898 v1

(Invited) SOI-Type Bonded Structures for Advanced Technology Nodes

J. Widiez , J. Hartmann , F. Mazen , S. Sollier , C. Veytizou et al.
ECS Transactions, 2014, 64 (5), pp.35-48. ⟨10.1149/06405.0035ecst⟩
Article dans une revue hal-01991972 v1

Composition-Dependent Interfacial Abruptness in Au-Catalyzed Si 1– x Ge x /Si/Si 1– x Ge x Nanowire Heterostructures

Priyanka Periwal , Nickolay Sibirev , Gilles Patriarche , Bassem Salem , Franck Bassani et al.
Nano Letters, 2014, 14 (9), pp.5140-5147
Article dans une revue hal-02000745 v1

High density and taper-free boron doped Si 1− x Ge x nanowire via two-step growth process

Priyanka Periwal , Bassem Salem , Franck Bassani , Thierry Baron , Jean-Paul Barnes
Journal of Vacuum Science & Technology A, 2014, 32 (4), pp.041401
Article dans une revue hal-02000814 v1

Growth strategies to control tapering in Ge nanowires

P. Periwal , T. Baron , P. Gentile , B. Salem , F. Bassani
APL Materials, 2014, 2 (4), pp.046105. ⟨10.1063/1.4870875⟩
Article dans une revue hal-01848738 v1

Impact of bilayer character on High K gate stack dielectrics breakdown obtained by conductive atomic force microscopy

R. Foissac , S. Blonkowski , M. Kogelschatz , P. Delcroix , M. Gros-Jean et al.
Microelectronics Reliability, 2013, 53 (12), pp.1857-1862
Article dans une revue hal-00919191 v1

Electrical Characterization of Planar Silicon Nanowire Field-Effect Transistors

G. Rosaz , B. Salem , N. Pauc , P. Gentile , A. Potié et al.
International Journal of Nanoscience, 2012, 11 (04), pp.1240011. ⟨10.1142/S0219581X1240011X⟩
Article dans une revue hal-00777301 v1

Memory properties and charge effect study in Si nanocrystals by scanning capacitance microscopy and spectroscopy.

Z. Lin , G. Bremond , F. Bassani
Nanoscale Research Letters, 2011, pp.6:163. ⟨10.1186/1556-276X-6-163⟩
Article dans une revue hal-00629270 v1

Multi-tracer image fusion for patient follow-up, using a multi-observation statistical image fusion framework : a feasibility study

S David , Mathieu Hatt , P Fernandez , M Allard , O Barrett et al.
Journal of Nuclear Medicine, 2010, 51 (supp. 2), pp.1301
Article dans une revue hal-00703713 v1

The effect of Sb on the oxidation of Ge quantum dots

Y.S. Lim , F. Bassani , A. Portavoce , A. Ronda , S. Nozaki et al.
Materials Science and Engineering: B, 2003, 101 (1-3), pp.190-193. ⟨10.1016/S0921-5107(02)00716-X⟩
Article dans une revue istex hal-02386306 v1
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Auger spectroscopy thermodesorption of Sb on Si1-xGex layers grown on Si(1 0 0) substrates

A. Portavoce , F. Bassani , A. Ronda , I. Berbezier
Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 2002
Article dans une revue hal-02393648 v1

Improvement in the luminescence properties of Si/CaF2 nanostructures

F. Bassani , Sandie Ménard , Isabelle Berbezier , F.Arnaud D’avitaya , Irina Mihalcescu
Materials Science and Engineering: B, 2000, 69-70, pp.340 - 344. ⟨10.1016/S0921-5107(99)00233-0⟩
Article dans une revue istex hal-01628406 v1

Fabrication and optical properties of Si/CaF2(111) multi-quantum wells

F. Bassani , L. Vervoort , Irina Mihalcescu , J. C. Vial , F. Arnaud D’avitaya
Journal of Applied Physics, 1996, 79 (8), ⟨10.1063/1.361834⟩
Article dans une revue hal-01628590 v1

Efficient Visible-Light Emission from Si/CaF2 (111) Heterostructures Grown by Molecular Beam Epitaxy

L. Vervoort , F. Bassani , Irina Mihalcescu , J. C. Vial , F. Arnaud d'Avitaya
physica status solidi (b), 1995, 190 (1), pp.123 - 127. ⟨10.1002/pssb.2221900119⟩
Article dans une revue istex hal-01628413 v1
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Chemistry of buried interfaces in III-V heterostructures using lab-scale HAXPES and ToF-SIMS

Eugénie Martinez , Guy-Vano Tsamo Tagougue , Marc Veillerot , Vincent Thoreton , Mickael Martin et al.
2025 E-MRS fall, Sep 2025, Varsovie, Poland
Communication dans un congrès cea-05382410 v1

T-REX-6G : Development of performant CMOS-compatible ohmic contacts for THz InP-HBT on Silicon technology

Antoine Lombrez , Hervé Boutry , Alexis Divay , Léo Colas , Nicolas Coudurier et al.
Journées scientifiques du PEPR électronique, Mar 2025, Paris, France
Communication dans un congrès hal-05158525 v1

Study of In0.53Ga0.47As/ InP/InAlAs/InP heterostructures by ToF-SIMS and HAXPES

G. Tsamo Tagougue , E. Martinez , M. Veillerot , V. Thoréton , F. Bassani et al.
SIMS-24, 8-13, Sep 2024, La Rochelle, France
Communication dans un congrès hal-04777521 v1

Étude de l'oxydation du séléniure de gallium (GaSe) à l'air : Approche XPS et Raman

B. Smiri , M. Martin , Jean-Luc Deschanvres , E. Nolot , F. Bassani et al.
JNSPE 2024, May 2024, Lille, France
Communication dans un congrès hal-04942890 v1

Toward Large Scale Production of III-VI 2D Materials and heterostructures by Pulsed MOCVD

R. Bernardin , M. Martin , F. Bassani , H. Okuno , S. Cavalaglio et al.
E-MRS Fall Meeting 2024, Sep 2024, Varsovie, Poland
Communication dans un congrès hal-04777496 v1
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Study of In0,53Ga0,47As/ InP/InAlAs/InP heterostructures by TOF-SIMS and HAXPES

Guy-Vano Tsamo Tagougue , Eugénie Martinez , Marc Veillerot , Vincent Thoreton , Thierry Baron et al.
SIMS 24, Jun 2024, Rochelle, France
Communication dans un congrès cea-04862165 v1

Development and study of active-passive butt-joint regrowth of AlGaInAs and GaInAsP on InP via MOVPE

G. Afonso De Castro , N. Vaissiere , C. Calo , J.-F. Paret , D. Micha et al.
JNOG 2024, Jul 2024, Rouen, France
Communication dans un congrès hal-04777532 v1

III-V monolithic integration for optoelectronic devices and new developments on 2D materials

T Baron , V Letka , H Hijazi , H Mehdi , L Mallet Dida et al.
NMDC 2023 - IEEE Nanotechnology Materials and Devices Conference, Oct 2023, Paestum, Italy. pp.72-73, ⟨10.1109/NMDC57951.2023.10344099⟩
Communication dans un congrès hal-04624572 v1
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OPTIMIZATION OF SnO2 THIN FILMS FOR LOW TEMPERATURE NO2 SENSORS APPLICATIONS

Antonio Assaf , Mohammed Zeghouane , Jean-Raoul Plaussu , Sebastien Cavalaglio , Bernard Pelissier et al.
9th EnvIMEKO Symposium of Environmental Instrumentation and Measurements, Jun 2022, Le Mans, France
Communication dans un congrès hal-04912783 v1

AlGaInAs Multi-Quantum Well Laser Array on Silicon Achieved by InP-Seed-Bonding and MOVPE Selective Area Growth

Claire Besancon , Nicolas Vaissiere , Delphine Neel , Hussein Mehdi , Gauthier Lefevre et al.
2022 Compound Semiconductor Week (CSW), Jun 2022, Ann Arbor, United States. pp.1-2, ⟨10.1109/CSW55288.2022.9930433⟩
Communication dans un congrès hal-04627233 v1

Formation Mechanisms of ZnO Nanowires on Polycrystalline Au Seed Layers for Piezoelectric Devices

Clément Lausecker , Bassem Salem , Xavier Baillin , Hervé Roussel , Eirini Sarigiannidou et al.
EMRS Spring Meeting, 2019, Nice, France
Communication dans un congrès hal-02332953 v1

IV-IV heterostructure nanowires: advances in growth, characterization and applications

Franck Bassani
Collaborative Conference on Materials Research (CCMR), Jun 2019, Gyeonggi Goyang/Seoul, South Korea
Communication dans un congrès hal-02117209 v1

Growth and electrical properties of in-situ doped GeSn nanowires for low power tunnel Field Effect Transistor

T. Haffner , F. Bassani , P. Gentile , N. Pauc , E. Martinez et al.
2019 International Conference on Solid State Devices and Materials (SSDM2019), 2019, Nagoya, Japan
Communication dans un congrès hal-02332962 v1

Fabrication and characterization of « bottom-up » and « top-down » GeSn nanowires

F. Bassani , T. Haffner , E. Martinez , P. Gentile , E. Robin et al.
EMRS Fall Meeting 2019, 2019, Varsovie, Poland
Communication dans un congrès hal-02332971 v1

Effect of wet treatments on the electrical properties of Al2O3/GeSn MOS capacitors

B. Salem , M. A. Mahjoub , T. Haffner , Y. Guerfi , S. Labau et al.
EMRS Fall Meeting, 2019, EMRS Fall Meeting 2019 (Varsovie, Pologne), Poland
Communication dans un congrès hal-02332929 v1

High-quality Epitaxial Growth of AlGaInAs-based Active Structure on a Directly-Bonded InPoSi Substrate

Claire Besancon , Jean Decobert , Jean-Pierre Le Goec , Nicolas Vaissière , Cecilia Dupre et al.
2019 Compound Semiconductor Week (CSW), May 2019, Nara, Japan. pp.1-2, ⟨10.1109/ICIPRM.2019.8818994⟩
Communication dans un congrès hal-02330625 v1

Photonic devices with reduced In, Ga and Sb content

T. Baron , Ml. Touraton , T. Cerba , M. Martin , J. Moeyaert et al.
EMRS FALL MEETING, 2019, Varsovie, Poland
Communication dans un congrès hal-02330716 v1

InAs/GaSb thin layers directly grown on nominal (001)-Si substrate by MOCVD for the fabrication of InAs FINFET

Tiphaine Cerba , Mickaël Martin , Jeremy Moeyaert , Reynald Alcotte , Bassem Salem et al.
19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE 2018), Jun 2018, Nara, Japan
Communication dans un congrès hal-01954906 v1

Dopant and chemical composition profiling in IV-IV nanowires

F. Bassani , T. Haffner , B. Salem , S. David , E. Martinez et al.
Nanowire Week 2018, Jun 2018, Hamilton, Ontario, Canada, Canada
Communication dans un congrès hal-01954898 v1

Nucleation and growth mechanisms of ZnO nanowires on Au thin films by chemical bath deposition for piezoelectric nanogenerators

Clément Lausecker , Bassem Salem , Xavier Baillin , Hervé Roussel , Eirini Sarigiannidou et al.
NANO-structures and nanomaterials SElf-Assembly, NanoSEA 2018, 2018, Carqueiranne, France
Communication dans un congrès hal-01954891 v1

Growth of Germanium-Tin nanowires by Chemical Vapor Deposition via the VLS mechanism

T. Haffner , F. Bassani , P. Gentile , A. Gassenq , N. Pauc et al.
EMRS Fall meeting 2018, 2018, Varsovie, Poland
Communication dans un congrès hal-01954888 v1

MOCVD grown InAs/GaAs quantum dots on Si substrate

O. Abouzaid , J. Moeyaert , B. Salem , S. David , F. Bassani et al.
NANO-structures and nanomaterials SElf-Assembly, NanoSEA 2018, 2018, Carqueiranne, France
Communication dans un congrès hal-01954896 v1

Nanoscale elemental analysis of GexSn1-x nanowires by Auger microscopy

E. Martinez , T. Haffner , A. Gassenq , Eric Robin , J. Aubin et al.
European Conference on Applications of Surface and Interface Analysis ECASIA 2017, 2017, Montpellier, France
Communication dans un congrès hal-01929237 v1

Toward 3D integrationof self-assembled horizontal Si and SiGe nanowires on CMOS chip.

M. Merhej , T. Honegger , S. Ecoffey , F. Bassani , T. Baron et al.
European Materials Research Society Fall Meeting, E-MRS, Sep 2017, Warsaw, Poland
Communication dans un congrès hal-02320609 v1

DSA-based process for InAs horizontal nanowires in sub-10nm FET transistors

Tiphaine Cerba , Mickaël Martin , Jeremy Moeyaert , Bassem Salem , Etienne Eustache et al.
Journées Nationales des Nanofils Semiconducteurs, J2N 2017, 2017, Grenoble, France
Communication dans un congrès hal-01929256 v1

Integration of III-V materials on (001)-Si substrate for optoelectronic and nanoelectronic applications

Tiphaine Cerba , Mickaël Martin , Jeremy Moeyaert , Sylvain David , Jean-Luc Rouvière et al.
2017 EMRS Fall Meeting, 2017, Warsaw, Poland
Communication dans un congrès hal-01891383 v1

Sn incorporation in vapor-liquid-solid Ge NWs grown by chemical vapor deposition

T. Haffner , F. Bassani , M. Zeghouane , S. David , P. Gentile et al.
2017 EMRS Fall Meeting, 2017, Warsaw, Poland
Communication dans un congrès hal-01891352 v1

Integration of III-V materials on (001)-Si substrate for optoelectronic and nanoelectronic applications

T. Cerba , M. Martin , J. Moeyaert , S. David , J.-L. Rouvière et al.
E-MRS Fall meeting, Symposium M, 2017, Warsaw, Poland
Communication dans un congrès hal-01905730 v1

Assessment of GeSn surface wet treatment for prior to Atomic Layer Deposition of High-k Dielectrics

M.A. Mahjoub , T. Haffner , J. Aubin , J.M. Hartmann , G. Ghibaudo et al.
2017 MRS Fall Meeting & Exhibit: Symposium PM03 : Interfaces and Interface Engineering in Inorganic Materials, Y. Chen, E. Bitzek, M.T. Perez Prado, D. Rowenhorst, Nov 2017, Boston, United States
Communication dans un congrès hal-01929247 v1

Elaboration et caractérisation de nanofils Ge1-xSnx par CVD via le mécanisme VLS

T. Haffner , F. Bassani , P. Gentile , A. Gassenq , N. Pauc et al.
Journées Nationales des Nanofils Semiconducteurs, J2N 2017, 2017, Grenoble, France
Communication dans un congrès hal-01929251 v1

Physico-chemical characterization of III-V heterostructures epitaxied on 300 mm Si substrates by Atom Probe Tomography and ToF-SIMS

Georges Beainy , Tiphaine Cerba , Reynald Alcotte , Franck Bassani , Mickaël Martin et al.
2017 EMRS Fall Meeting, 2017, Warsaw, Poland
Communication dans un congrès hal-01891380 v1

Low contact resistivity for GaAs, InAs, InGaAs epitaxially grown on 300mm Si(001) substrate by MOCVD

R. Alcotte , M. Martin , J. Moeyaert , T. Cerba , B. Salem et al.
17th European Workshop on Metalorganic Vapour Phase Epitaxy (EW-MOVPE17), Jun 2017, Grenoble, France. pp.C1
Communication dans un congrès hal-01929219 v1

Growth and integration of group IV nanowires for Tunnel FET devices

B. Salem , V. Brouzet , P. Periwal , F. Bassani , P. Gentile et al.
Collaborative Conference on Materials Research (CCMR 2017), Jun 2017, Jeju island, South Korea
Communication dans un congrès hal-01891328 v1

Anti-phase boundary free GaSb layers grown on (001)-Si substrates by Metal Organic Chemical Vapor Deposition

T. Cerba , M. Martin , J. Moeyaert , S. David , J.-L. Rouvière et al.
17th European Workshop on Metalorganic Vapour Phase Epitaxy (EW-MOVPE17), 2017, grenoble, France
Communication dans un congrès hal-01891389 v1

Growth of anti-phase boundaries free GaAs on slightly miscut Si and Ge-buffered Si substrates

Y. Bogumilowicz , M. Martin , R. Alcotte , R. Cipro , A-M. Papon et al.
The 10th International Conference on Silicon Epitaxy and heterostructures (ICSI-10), 2017, Warwick, United Kingdom
Communication dans un congrès hal-01891345 v1

Electrical Properties of GaAs, InAs, InGaAs Epitaxially Grown on 300 mm Si(001) Substrate by MOCVD

Reynald Alcotte , Mickaël Martin , Tiphaine Cerba , Jeremy Moeyaert , Fares Chouchane et al.
2017 MRS Spring Meeting:Symposium ED3: Electronic Device and Materials: Physics, Chemistry and Materials for Beyond silicon Electronics, session III-V Growth and Interfaces, Apr 2017, Phoenix, United States
Communication dans un congrès hal-01929226 v1

Fabrication and characterization of horizontal and vertical GeSn nanowires using a “top-down” approach for future CMOS generations

E. Eustache , S. Labau , T. Haffner , M.A. Mahjoub , J. Aubin et al.
Journées Nationales des Nanofils Semiconducteurs, J2N 2017, 2017, Grenoble, France
Communication dans un congrès hal-01929248 v1

Toward 3D integration of self-assembled horizontal Si and SiGe nanowires on CMOS chip

M. Merhej , T. Honegger , S. Ecoffey , F. Bassani , T. Baron et al.
2017 EMRS Fall Meeting, 2017, Warsaw, Poland
Communication dans un congrès hal-01891375 v1

PAR-XPS investigations of ultrathin SiO2 layers grown by PEALD on SiGe and Ge

M. A. Mahjoub , B. Pelissier , S. Labau , F. Bassani , T. Baron
ECASIA 2017, Sep 2017, Montpellier, France
Communication dans un congrès hal-01960779 v1

Low resistance contacts on heavily doped GaAs and In53Ga47As grown on 300mm Si(100) substrates by MOCVD

R. Alcotte , M. Martin , J. Moeyaert , R. Cipro , S. David et al.
2016 E-MRS Fall Meeting, Sep 2016, Warsaw, Poland
Communication dans un congrès hal-01881955 v1

GaAs and InGaAs heteroepitaxy on blanket and patterned Si(100) 300mm substrates by MOCVD and their physical properties

Thierry Baron , Reynald Alcotte , Mickaël Martin , Romain Cipro , Tiphaine Cerba et al.
2016 E-MRS Fall Meeting,, Sep 2016, Warsaw, Poland
Communication dans un congrès hal-02011750 v1

Fabrication and electrical characterisations of Si/Si1-xGex nanowires Tunnel FET device : impact of Germanium concentration

Virginie Brouzet , Bassem Salem , Priyanka Periwal , Thierry Baron , Franck Bassani et al.
2015 MRS Spring Meeting & Exhibit: Symposium S: Semiconductor Nanowires and Devices for Advanced Applications, J. Arbiol, K. Dick Thelander, M. Filler, A. Fontcuberta, Q. Xiong, Apr 2015, San Francisco, United States
Communication dans un congrès cea-01998244 v1

Physical Properties Investigation of Arsenic Based III-V Materials Grown on Nanopatterned Si(100) Substrates

R. Cipro , M. Martin , J. Moeyaert , F. Bassani , V. Gorbenko et al.
2015 MRS Spring Meeting & Exhibit, 2015, San Francisco, California, United States
Communication dans un congrès hal-01489575 v1

Fabrication and Electrical Characterization of Si and Si/SiGe Nanowires Tunnel Field-Effect-Transistor

Virginie Brouzet , Bassem Salem , P Periwal. , Guillaume Rosaz , Thierry Baron et al.
4èmes Journées Nationales sur les Technologies Emergentes en Micro-Nanofabrication (JNTE 2015), Nov 2015, Ecully, France
Communication dans un congrès hal-02072677 v1

Electrical characterisation of horizontal and vertical gate-all-around Si/SiGe nanowires field effect transistors

B. Salem , G. Rosaz , N. Pauc , P. Gentile , P. Periwal et al.
2014 Silicon Nanoelectronics Workshop (SNW), Jun 2014, Honolulu, United States. pp.1-2, ⟨10.1109/SNW.2014.7348570⟩
Communication dans un congrès hal-01991871 v1

Horizontal Integration and Electrical Characterisation of Si/SiGe Nanowire Tunnel FETs

Virginie Brouzet , Bassem Salem , Priyanka Periwal , Guillaume Rosaz , Thierry Baron et al.
2014 E-MRS Spring Meeting: Symposium X: Materials Research for Group IV semiconductors: Growth, Characterization & Techno, Developments, G. Kissinger, S. Pizzini, H. Yamada-Kaneta, C. Clayes, D. Yang and G. Wilson, May 2014, Lille, France
Communication dans un congrès cea-02067074 v1

Fabrication and Electrical Characterization of tunnel FET Devices Based on Si/SiGe Heterojunction PIN nanowires

Virginie Brouzet , Bassem Salem , Priyanka Periwal , Thierry Baron , Franck Bassani et al.
2014 E-MRS Fall Meeting: Symposium B: Materials for Optics and Optoelectronics, G. Ben Assayag, M. Perego and P. Pellegrino, Sep 2014, Warsaw, Poland
Communication dans un congrès cea-02067075 v1

In, Al, Ga, As compounds grown by MOCVD for MOSFET channel on blanket and patterned 300 mm Si (100) substrates exhibiting room temperature photoluminescence

T. Baron , R. Cipro , M. Martin , F. Bassani , V. Gorbenko et al.
2014 MRS Spring Meeting & Exhibit, 2014, San Francisco, California, USA, United States
Communication dans un congrès hal-01489869 v1

C-AFM Based Investigation of the Effects of Bilayer Constitution on High k Gate Stack Dielectrics Breakdown

R. Foissac , S. Blonkowski , M. Kogelschatz , F. Bassani , M. Gros-Jean et al.
7th International Conference on Materials for Advanced Technologies, 2013, Jun 2013, Singapour, Singapore
Communication dans un congrès hal-00919203 v1

Elaboration and Characterization of interfacial abruptness in Si-SiGe heterostructured Nanowires (hNWs) obtained by VLS-CVD Method

P. Periwal , T. Baron , G. Patriarche , L. Latu-Romain , B. Salem et al.
Workshop NWG 2013, 2013, Lausanne, Switzerland
Communication dans un congrès hal-00955748 v1

Electrical characterization of silicon and silicon-germanium nanowires Field effect transistors

B. Salem , G. Rosaz , N. Pauc , P. Gentile , F. Bassani et al.
RAM2013 - Research to Applications & Markets, Jun 2013, Sousse, Tunisia
Communication dans un congrès hal-00955743 v1

Elaboration and Characterization of Si-SiGe Axial Heterostructures in Nanowires

P. Periwal , F. Bassani , G. Patriarche , L. Latu-Romain , V. Brouzet et al.
E MRS, May 2013, Strasbourg, France
Communication dans un congrès hal-00944259 v1

Dopant profiling of individual Si nanowires using scanning capacitance microscopy

F. Bassani , P. Periwal , D. Mariolle , N. Chevalier , B. Salem et al.
EMRS 2013, 2013, Strasbourg, France
Communication dans un congrès hal-00955739 v1

Growth and Characterization of Si/SiGe Axial NWs for TFET application

P. Periwal , T. Baron , F. Bassani , L. Latu-Romain , B. Salem et al.
E- Materials Research Society, Fall Meeting, Sep 2013, warsaw, Russia
Communication dans un congrès hal-00944270 v1

Elaboration and Characterization of Interfacial Abruptness in Si/SiGe Heterostructured Nanowires obtained by VLS-CVD Method

P. Periwal , T. Baron , G. Patriarche , D. Mariolle , N. Chevalier et al.
Nanowire Growth, Jun 2013, Lausanne, Switzerland
Communication dans un congrès hal-00944264 v1

The Impact of Bilayer Character on High K Gate Stack Dielectrics Breakdown Obtained by Conductive Atomic Force Microscopy

R. Foissac , S. Blonkowski , M. Kogelschatz , F. Bassani , M. Gros-Jean et al.
FUNCTIONAL OXIDES FOR INTEGRATION IN MICRO‐ AND NANO‐ELECTRONICS Workshop 2013, Apr 2013, Autrans, France
Communication dans un congrès hal-00919197 v1

Observation of dielectric breakdown phenomena at nanoscale by scanning probe microscopy under ultra high vacuum

M. Kogelschatz , R. Foissac , S. Blonkowski , P. Delcroix , F. Bassani
24th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (case study workshop), 2013, Sep 2013, Arcachon, France
Communication dans un congrès hal-00919210 v1

Horizontal Integration and electrical characterisation of Silicon Nanowire Tunnel FETs

V. Brouzet , B. Salem , P. Periwal , T. Baron , F. Bassani et al.
ICONN 2013, 2013, Annecy, France
Communication dans un congrès hal-00955750 v1

Elaboration and Characterization of Si-SiGe Axial Heterostructures in Nanowires, poster presentation

P. Periwal , F. Bassani , G. Patriarche , L. Latu-Romain , V. Brouzet et al.
E- Materials Research Society, Spring Meeting, May 2013, Strasbourg, France
Communication dans un congrès hal-00950046 v1

Growth & Characterization of Si/SixGe1-x Axial heterostructures using VLS and VSS mechanism by RP-CVD

P. Periwal , T. Baron , L. Latu-Romain , G. Rosaz , S. Bassem et al.
E-MRS Warsaw, 2012, Sep 2012, Warsaw, Poland
Communication dans un congrès hal-00777306 v1

La grotte des Gorges ( Jura) : un site inédit à l'interface des territoires symboliques du Paléolithique supérieur ancien.

S David , Francesco D’errico , Romain Pigeaud , G Bereizat , E Robert et al.
Marcel Otte & Foni Le Brun Ricalens. Modes de contacts et de déplacements au Paléolithique eurasiatique, 2014
Chapitre d'ouvrage hal-01897703 v1