Franck BASSANI
Publications
Publications
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Chemistry of buried interfaces in III-V heterostructures using lab-scale HAXPES and ToF-SIMS2025 E-MRS fall, Sep 2025, Varsovie, Poland |
T-REX-6G : Development of performant CMOS-compatible ohmic contacts for THz InP-HBT on Silicon technologyJournées scientifiques du PEPR électronique, Mar 2025, Paris, France |
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Development and study of active-passive butt-joint regrowth of AlGaInAs and GaInAsP on InP via MOVPEJNOG 2024, Jul 2024, Rouen, France |
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Study of In0.53Ga0.47As/ InP/InAlAs/InP heterostructures by ToF-SIMS and HAXPESSIMS-24, 8-13, Sep 2024, La Rochelle, France |
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Étude de l'oxydation du séléniure de gallium (GaSe) à l'air : Approche XPS et RamanJNSPE 2024, May 2024, Lille, France |
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Toward Large Scale Production of III-VI 2D Materials and heterostructures by Pulsed MOCVDE-MRS Fall Meeting 2024, Sep 2024, Varsovie, Poland |
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Study of In0,53Ga0,47As/ InP/InAlAs/InP heterostructures by TOF-SIMS and HAXPESSIMS 24, Jun 2024, Rochelle, France |
III-V monolithic integration for optoelectronic devices and new developments on 2D materialsNMDC 2023 - IEEE Nanotechnology Materials and Devices Conference, Oct 2023, Paestum, Italy. pp.72-73, ⟨10.1109/NMDC57951.2023.10344099⟩ |
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OPTIMIZATION OF SnO2 THIN FILMS FOR LOW TEMPERATURE NO2 SENSORS APPLICATIONS9th EnvIMEKO Symposium of Environmental Instrumentation and Measurements, Jun 2022, Le Mans, France |
AlGaInAs Multi-Quantum Well Laser Array on Silicon Achieved by InP-Seed-Bonding and MOVPE Selective Area Growth2022 Compound Semiconductor Week (CSW), Jun 2022, Ann Arbor, United States. pp.1-2, ⟨10.1109/CSW55288.2022.9930433⟩ |
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Fabrication and characterization of « bottom-up » and « top-down » GeSn nanowiresEMRS Fall Meeting 2019, 2019, Varsovie, Poland |
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Growth and electrical properties of in-situ doped GeSn nanowires for low power tunnel Field Effect Transistor2019 International Conference on Solid State Devices and Materials (SSDM2019), 2019, Nagoya, Japan |
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Formation Mechanisms of ZnO Nanowires on Polycrystalline Au Seed Layers for Piezoelectric DevicesEMRS Spring Meeting, 2019, Nice, France |
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IV-IV heterostructure nanowires: advances in growth, characterization and applicationsCollaborative Conference on Materials Research (CCMR), Jun 2019, Gyeonggi Goyang/Seoul, South Korea |
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Effect of wet treatments on the electrical properties of Al2O3/GeSn MOS capacitorsEMRS Fall Meeting, 2019, EMRS Fall Meeting 2019 (Varsovie, Pologne), Poland |
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High-quality Epitaxial Growth of AlGaInAs-based Active Structure on a Directly-Bonded InPoSi Substrate2019 Compound Semiconductor Week (CSW), May 2019, Nara, Japan. pp.1-2, ⟨10.1109/ICIPRM.2019.8818994⟩ |
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Photonic devices with reduced In, Ga and Sb contentEMRS FALL MEETING, 2019, Varsovie, Poland |
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InAs/GaSb thin layers directly grown on nominal (001)-Si substrate by MOCVD for the fabrication of InAs FINFET19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE 2018), Jun 2018, Nara, Japan |
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Nucleation and growth mechanisms of ZnO nanowires on Au thin films by chemical bath deposition for piezoelectric nanogeneratorsNANO-structures and nanomaterials SElf-Assembly, NanoSEA 2018, 2018, Carqueiranne, France |
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Dopant and chemical composition profiling in IV-IV nanowiresNanowire Week 2018, Jun 2018, Hamilton, Ontario, Canada, Canada |
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MOCVD grown InAs/GaAs quantum dots on Si substrateNANO-structures and nanomaterials SElf-Assembly, NanoSEA 2018, 2018, Carqueiranne, France |
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Growth of Germanium-Tin nanowires by Chemical Vapor Deposition via the VLS mechanismEMRS Fall meeting 2018, 2018, Varsovie, Poland |
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PAR-XPS investigations of ultrathin SiO2 layers grown by PEALD on SiGe and GeECASIA 2017, Sep 2017, Montpellier, France |
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Sn incorporation in vapor-liquid-solid Ge NWs grown by chemical vapor deposition2017 EMRS Fall Meeting, 2017, Warsaw, Poland |
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Integration of III-V materials on (001)-Si substrate for optoelectronic and nanoelectronic applicationsE-MRS Fall meeting, Symposium M, 2017, Warsaw, Poland |
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Integration of III-V materials on (001)-Si substrate for optoelectronic and nanoelectronic applications2017 EMRS Fall Meeting, 2017, Warsaw, Poland |
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Toward 3D integrationof self-assembled horizontal Si and SiGe nanowires on CMOS chip.European Materials Research Society Fall Meeting, E-MRS, Sep 2017, Warsaw, Poland |
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DSA-based process for InAs horizontal nanowires in sub-10nm FET transistorsJournées Nationales des Nanofils Semiconducteurs, J2N 2017, 2017, Grenoble, France |
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Nanoscale elemental analysis of GexSn1-x nanowires by Auger microscopyEuropean Conference on Applications of Surface and Interface Analysis ECASIA 2017, 2017, Montpellier, France |
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Physico-chemical characterization of III-V heterostructures epitaxied on 300 mm Si substrates by Atom Probe Tomography and ToF-SIMS2017 EMRS Fall Meeting, 2017, Warsaw, Poland |
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Assessment of GeSn surface wet treatment for prior to Atomic Layer Deposition of High-k Dielectrics2017 MRS Fall Meeting & Exhibit: Symposium PM03 : Interfaces and Interface Engineering in Inorganic Materials, Y. Chen, E. Bitzek, M.T. Perez Prado, D. Rowenhorst, Nov 2017, Boston, United States |
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Elaboration et caractérisation de nanofils Ge1-xSnx par CVD via le mécanisme VLSJournées Nationales des Nanofils Semiconducteurs, J2N 2017, 2017, Grenoble, France |
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Growth and integration of group IV nanowires for Tunnel FET devicesCollaborative Conference on Materials Research (CCMR 2017), Jun 2017, Jeju island, South Korea |
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Anti-phase boundary free GaSb layers grown on (001)-Si substrates by Metal Organic Chemical Vapor Deposition17th European Workshop on Metalorganic Vapour Phase Epitaxy (EW-MOVPE17), 2017, grenoble, France |
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Growth of anti-phase boundaries free GaAs on slightly miscut Si and Ge-buffered Si substratesThe 10th International Conference on Silicon Epitaxy and heterostructures (ICSI-10), 2017, Warwick, United Kingdom |
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Low contact resistivity for GaAs, InAs, InGaAs epitaxially grown on 300mm Si(001) substrate by MOCVD17th European Workshop on Metalorganic Vapour Phase Epitaxy (EW-MOVPE17), Jun 2017, Grenoble, France. pp.C1 |
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Electrical Properties of GaAs, InAs, InGaAs Epitaxially Grown on 300 mm Si(001) Substrate by MOCVD2017 MRS Spring Meeting:Symposium ED3: Electronic Device and Materials: Physics, Chemistry and Materials for Beyond silicon Electronics, session III-V Growth and Interfaces, Apr 2017, Phoenix, United States |
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Toward 3D integration of self-assembled horizontal Si and SiGe nanowires on CMOS chip2017 EMRS Fall Meeting, 2017, Warsaw, Poland |
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Fabrication and characterization of horizontal and vertical GeSn nanowires using a “top-down” approach for future CMOS generationsJournées Nationales des Nanofils Semiconducteurs, J2N 2017, 2017, Grenoble, France |
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GaAs and InGaAs heteroepitaxy on blanket and patterned Si(100) 300mm substrates by MOCVD and their physical properties2016 E-MRS Fall Meeting,, Sep 2016, Warsaw, Poland |
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Low resistance contacts on heavily doped GaAs and In53Ga47As grown on 300mm Si(100) substrates by MOCVD2016 E-MRS Fall Meeting, Sep 2016, Warsaw, Poland |
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Fabrication and electrical characterisations of Si/Si1-xGex nanowires Tunnel FET device : impact of Germanium concentration2015 MRS Spring Meeting & Exhibit: Symposium S: Semiconductor Nanowires and Devices for Advanced Applications, J. Arbiol, K. Dick Thelander, M. Filler, A. Fontcuberta, Q. Xiong, Apr 2015, San Francisco, United States |
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Fabrication and Electrical Characterization of Si and Si/SiGe Nanowires Tunnel Field-Effect-Transistor4èmes Journées Nationales sur les Technologies Emergentes en Micro-Nanofabrication (JNTE 2015), Nov 2015, Ecully, France |
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Physical Properties Investigation of Arsenic Based III-V Materials Grown on Nanopatterned Si(100) Substrates2015 MRS Spring Meeting & Exhibit, 2015, San Francisco, California, United States |
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In, Al, Ga, As compounds grown by MOCVD for MOSFET channel on blanket and patterned 300 mm Si (100) substrates exhibiting room temperature photoluminescence2014 MRS Spring Meeting & Exhibit, 2014, San Francisco, California, USA, United States |
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Horizontal Integration and Electrical Characterisation of Si/SiGe Nanowire Tunnel FETs2014 E-MRS Spring Meeting: Symposium X: Materials Research for Group IV semiconductors: Growth, Characterization & Techno, Developments, G. Kissinger, S. Pizzini, H. Yamada-Kaneta, C. Clayes, D. Yang and G. Wilson, May 2014, Lille, France |
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Electrical characterisation of horizontal and vertical gate-all-around Si/SiGe nanowires field effect transistors2014 Silicon Nanoelectronics Workshop (SNW), Jun 2014, Honolulu, United States. pp.1-2, ⟨10.1109/SNW.2014.7348570⟩ |
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Fabrication and Electrical Characterization of tunnel FET Devices Based on Si/SiGe Heterojunction PIN nanowires2014 E-MRS Fall Meeting: Symposium B: Materials for Optics and Optoelectronics, G. Ben Assayag, M. Perego and P. Pellegrino, Sep 2014, Warsaw, Poland |
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Elaboration and Characterization of Si-SiGe Axial Heterostructures in Nanowires, poster presentationE- Materials Research Society, Spring Meeting, May 2013, Strasbourg, France |
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C-AFM Based Investigation of the Effects of Bilayer Constitution on High k Gate Stack Dielectrics Breakdown7th International Conference on Materials for Advanced Technologies, 2013, Jun 2013, Singapour, Singapore |
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Elaboration and Characterization of interfacial abruptness in Si-SiGe heterostructured Nanowires (hNWs) obtained by VLS-CVD MethodWorkshop NWG 2013, 2013, Lausanne, Switzerland |
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Electrical characterization of silicon and silicon-germanium nanowires Field effect transistorsRAM2013 - Research to Applications & Markets, Jun 2013, Sousse, Tunisia |
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Dopant profiling of individual Si nanowires using scanning capacitance microscopyEMRS 2013, 2013, Strasbourg, France |
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Elaboration and Characterization of Si-SiGe Axial Heterostructures in NanowiresE MRS, May 2013, Strasbourg, France |
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Growth and Characterization of Si/SiGe Axial NWs for TFET applicationE- Materials Research Society, Fall Meeting, Sep 2013, warsaw, Russia |
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Elaboration and Characterization of Interfacial Abruptness in Si/SiGe Heterostructured Nanowires obtained by VLS-CVD MethodNanowire Growth, Jun 2013, Lausanne, Switzerland |
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Observation of dielectric breakdown phenomena at nanoscale by scanning probe microscopy under ultra high vacuum24th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (case study workshop), 2013, Sep 2013, Arcachon, France |
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The Impact of Bilayer Character on High K Gate Stack Dielectrics Breakdown Obtained by Conductive Atomic Force MicroscopyFUNCTIONAL OXIDES FOR INTEGRATION IN MICRO‐ AND NANO‐ELECTRONICS Workshop 2013, Apr 2013, Autrans, France |
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Horizontal Integration and electrical characterisation of Silicon Nanowire Tunnel FETsICONN 2013, 2013, Annecy, France |
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Growth & Characterization of Si/SixGe1-x Axial heterostructures using VLS and VSS mechanism by RP-CVDE-MRS Warsaw, 2012, Sep 2012, Warsaw, Poland |
METHOD FOR THE NANOSCALE ETCHING OF A GERMANIUM-TIN ALLOY (GeSn) FOR A FET TRANSISTORFrance, Patent n° : EP3859769/FR3106930 / US2021242313. 2021 |
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Procédé de gravure à l’échelle nanométrique d’un alliage germanium étain (GeSn) pour transistor FETUnited States, Patent n° : Patent EP21153243, US202117156326. 2021 |
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Procédé optimisé de fabrication de motifs de matériau semi-conducteur III-V sur un substrat semi-conducteur.France, Patent n° : Brevet FRA 1358813. 2013 |
MOCVD grown InAs/GaAs quantum dots on GaAs and Ge/Si substratesJournées Nationales sur les Technologies Emergentes, Nov 2019, Grenoble, France |
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La grotte des Gorges, approche interdisciplinaire pour la contextualisation des évolutions paléoenvironnementales15ème Congrès Français de Sédimentologie, Oct 2015, Chambéry, France |
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MOCVD Epitaxy and Characterization of III-As and III-P Thin Layers on 300mm Silicon SubstrateMRS Spring Meeting, Apr 2015, San Francisco, California, United States. 2015 |
La grotte des Gorges ( Jura) : un site inédit à l'interface des territoires symboliques du Paléolithique supérieur ancien.Marcel Otte & Foni Le Brun Ricalens. Modes de contacts et de déplacements au Paléolithique eurasiatique, 2014 |