Frédéric Martinez
Publications
Publications
Design strategies for very low bandgap InAs/InAsSb thermophotovoltaic cells15th World Conference on Thermophotovoltaic Generation of Electricity, Oct 2024, Madrid, Spain |
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Investigations on a very low bandgap InAs/InAsSb thermophotovoltaic cell: TCAD simulations, band engineering and clean room processingJournées Nationales du Photovoltaïque (JNPV) 2023, Dec 2023, Dourdan, France |
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Fabrication, characterization and modeling of III-Sb based multijunction solar cellsLes Houches School of Physics - Physics of solar cells: from basic principles to material science, Apr 2022, Les Houches, France |
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InAs/InAsSb superlattice and barrier structure: from photodetectors to thermophotovoltaics cellsPhysics of solar cells: from basic principles to material science. Les Houches school of physics., Apr 2022, Les Houches, France |
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Analysis of the performances of a conventional GaAs solar cell operating at up to 200 °CJournées Nationales du Photovoltaïque 2020, Jan 2021, En ligne, France |
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Caractérisation et modélisation d’une cellule tandem AlGaAsSb/GaSbJournées Nationales du Photovoltaïque, Nov 2021, Dourdan, France |
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Physics of GaAs solar cells operating under thermal stressLes Houches School of Physics - Physics of Solar Cells: from basic principles to advanced characterization, Mar 2020, Les Houches, France |
Transforming a type-II InAs/InAsSb superlattice MWIR photodetector into a thermophotovoltaic cellSPIE Photonics West 2023, Jan 2023, San Francisco, United States |
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Low bandgap (near-field) TPV: materials and structuresThe 14th World Conference on Thermophotovoltaic Generation of Electricity (TPV-14), Andrej Lenert, May 2023, Online, United States |
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Modélisation de cellules solaires multijonctions III-Sb réalistesJournées Nationales du Photovoltaïque, Nov 2022, Dourdan, France |
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InAs/InAsSb superlattice thermophotovoltaic cell: how to adapt an infrared photodetector for TPV conversion2nd Workshop on Thermal Radiation to Electrical Energy conversion (TREE), LTeN, Université de Nantes, Oct 2022, Nantes France, France |
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InAs/InAsSb superlattice thermophotovoltaic cellsWorkshop on Thermal Radiation to Electrical Energy conversion (TREE), Equipe-projet TREE, Nov 2022, Champs sur Marne, France |
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Harvesting mid-wave infrared radiation with type-II InAs/InAsSb superlattices: from photodetectors to thermophotovoltaics cells13th Conference on Thermophotovoltaic Generation of Electricity (TPV-13), Apr 2022, Miyazaki & online (hybrid), Japan |
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Very-low bandgap thermophotovoltaic cell based on type-II InAs/InAsSb superlattice MWIR photodetectorJournées Nationales du Photovoltaïque (JNPV) 2022, FedPV, Nov 2022, Dourdan, France |
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Insight into the factors affecting the performances of a conventional GaAs solar cell operating at up to 200 °CJournées Nationales du Photovoltaïque 2021, Nov 2021, Dourdan, France |
Potential of AlGaAsSb alloys for GaSb-based multi-junction solar cellsForum of Revolutions in Renewable Energy in 21th Century (FOREN-2019), Oct 2019, Rome, Italy |
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Characterization and numerical analysis of III-Sb tandem solar cellsJournées Nationales du Photovoltaïque, Dec 2019, Dourdan, France |
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Characterization and pseudo-3D modeling of GaSb solar cells for high-concentration photovoltaics36th European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC), Sep 2019, Marseille, France |
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Investigation of GaSb solar cell with an AlGaAsSb window layer for applications as a bottom subcell of 4-junction solar cellsJournées Nationales du Photovoltaïque, Dec 2018, Dourdan, France |
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Investigation of antimonide-based semiconductors for high-efficiency multi-junction solar cells2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC), Jun 2018, Waikoloa Village, France. pp.0937-0942 |
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Capacitance voltage profiling to determine doping in InAs/GaSb LWIR SL photodetector structuresPhotonic West Conference, Feb 2017, San Francisco, United States. ⟨10.1117/12.2251153⟩ |
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Impact de la résistance série sous forte concentration solaire dans le cas de cellules antimoniuresJournées Nationales du PhotoVoltaïque, Dec 2016, Dourdan, France |
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Interest of Antimonide Compounds Based Multijunction Cells for High Concentrating Photovoltaics20th Sede Boqer Symposium on Solar Electricity Production, Sep 2016, Sede Boqer, Israel |
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Contacts ohmiques pour cellules solaires à base de matériaux antimoniures dans le cadre d'applications aux fortes concentrations solairesJournées Nationales sur l'Energie Solaire, Jun 2016, Perpignan, France |
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Multi-junctions PV concentrator solar cells, state of the art. Interest of antimonide compoundsEMRS Spring meeting, 2015, Lille, France |
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Thickness characterization by capacitance derivative in FDSOI p-i-n gated diodes2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Jan 2015, Bologna, France. ⟨10.1109/ULIS.2015.7063745⟩ |
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Structures à base de matériaux antimoniures pour la conversion de l’énergie solaire concentrée4ème JNPV, 2014, Dourdan, France |
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Noise measurements in electronic devicesInternational Instrumentation and Measurement Technology Conference, 2014., 2014, Montevideo, Uruguay |
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Numerical simulation of non-homogeneous 2D-CNT structuresNoise and Fluctuations (ICNF), 2013 22nd International Conference on, 2013, Montpellier, France |
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Caractérisation de contacts et de matériaux par la mesure du bruit Basse Fréquence13èmes Journées de la Matière Condensée - JMC13, Aug 2012, Montpellier, France |
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Percolation in 2D Carbon Nanotube Thin FilmsSymposium on Design, Test, Integration and Packaging of Mems/Moems (Dtip), 2012, Cannes, France |
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Comparison of the effects of different surfactants on electrical parameters in Carbon Nanotube thin films2011 21st International Conference on Noise and Fluctuations (ICNF), Jun 2011, Toronto, France. pp.472-475, ⟨10.1109/ICNF.2011.5994372⟩ |
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Numerical Model of Transport in Microcrystalline Silicon FilmsInternational Conference on Amorphous and Nanocrystalline Semiconductors (ICANS 24), 2011, Tokyo, Japan |
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Analytical modelling of Multiple-gate MOSFETs2011 Spanish Conference on Electron Devices (CDE), Feb 2011, Palma de Mallorca, Spain. pp.1-4, ⟨10.1109/SCED.2011.5744159⟩ |
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Low frequency noise modeling of SOI MOSFETs using Green's function approachInternational Conference on Noise and Fluctuations (ICNF), Jun 2011, Toronto, Canada. pp.348-351, ⟨10.1109/ICNF.2011.5994339⟩ |
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1T-DRAM at the 22nm technology node and beyond: An alternative to DRAM with high-k storage capacitor2011 IEEE 14th International Symposium on Electrets ISE 14, Aug 2011, Montpellier, France. pp.93-94 |
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1/f noise in strained SiGe on Insulator MOSFETs2011 21st International Conference on Noise and Fluctuations (ICNF), Jun 2011, Toronto, Canada. pp.344-347, ⟨10.1109/ICNF.2011.5994338⟩ |
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Evaluation of Interface Trap Density in Advanced SOI MOSFETs219th ECS Meeting, 2011, Montreal, Canada. pp.103-108, ⟨10.1149/1.3570783⟩ |
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A surface potential based compact model for lightly doped FD SOI MOSFETs with ultra-thin body12th International Conference on Ultimate Integration on Silicon (ULIS), Mar 2011, Cork, Ireland. pp.1-4, ⟨10.1109/ulis.2011.5757972⟩ |
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A simple analytical and explicit compact model for the drain current of UTB SOI MOSFETs2011 Spanish Conference on Electron Devices (CDE), Feb 2011, Palma de Mallorca, Spain. pp.1-4, ⟨10.1109/sced.2011.5744174⟩ |
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DC and low frequency noise characterization of Multi gate N-MOSFET in a bulk technology by integrating polysilicon filled trenchesULtimate Integration on Silicon 2010, 2010, Glasgow, United Kingdom |
Impact of Process Options on Low Frequency Noise in Germanium on- Insulator (GeOI) high-K & Metal Gate pMOSFETsInternational Conference on Ultimate Integration on Silicon, 2010, Glasgow, United Kingdom |
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Parasitic back-inferface conduction in planar and triple-gate SOI transistors2010 IEEE International SOI Conference, Oct 2010, San Diego, California, United States |
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Simulation of transport and 1/f noise in carbon nanotube filmsEdison, 2009, Montpellier, France. pp.012117, ⟨10.1088/1742-6596/193/1/012117⟩ |
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Numerical modeling of low frequency noise in ultrathin oxide MOSFETsNoise and fluctuations : 20th International Conference on Noise and Fluctuations : ICNF 2009, Jun 2009, Pisa, Italy. pp.285-290 |
1∕f noise, transport and percolation in carbon nanotube film field-effect transistors: simulation and experimentsNOISE AND FLUCTUATIONS: 20th International Conference on Noice and Fluctuations (ICNF-2009), 2009, Pisa (Italy), France. pp.85-88, ⟨10.1063/1.3140564⟩ |
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1∕f noise in 0.12 μm P-MOSFETs with High-k and metal gate fabricated in a Si Process Line on 200 mm GeOI WafersNOISE AND FLUCTUATIONS: 20th International Conference on Noice and Fluctuations (ICNF-2009), 2009, Pisa (Italy), Italy. pp.259-262, ⟨10.1063/1.3140445⟩ |
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Low Frequency Noise Sources in Ge Resistances elaborated on GeOI WafersNOISE AND FLUCTUATIONS: 20th International Conference on Noice and Fluctuations (ICNF-2009), 2009, Pisa (Italy), France. pp.105-108, ⟨10.1063/1.3140405⟩ |
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Interface oxide trap characterisation in germanium-on-insulator 0.12 μm PMOS transistors by drain current noise measurements2009 10th International Conference on Ultimate Integration on Silicon (ULIS, Mar 2009, Aachen, Germany. pp.87-90, ⟨10.1109/ULIS.2009.4897545⟩ |
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Extraction of slow oxide trap profiles by low-frequency noise analysis: Application to hot-electron-induced degradation2008 9th International Conference on Ultimate Integration on Silicon (ULIS), Mar 2008, Udine, France. pp.155-158, ⟨10.1109/ULIS.2008.4527162⟩ |
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Low frequency gate noise modeling of ultrathin oxide MOSFETsSPIE Fourth International Symposium on Fluctuations and Noise, 2007, Florence, Italy. pp.66001O, ⟨10.1117/12.726920⟩ |
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Low Frequency Noise of Ultrathin Oxide MOSFETs using Green’s Function ApproachNOISE AND FLUCTUATIONS: 19th International Conference on Noise and Fluctuations; ICNF 2007, 2007, Tokyo (Japan), Japan. pp.63-66, ⟨10.1063/1.2759637⟩ |
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Physical Low Frequency Noise Sources Associated to Drain and Gate Currents of Ultrathin Gate oxide on n-MOSFETsUltimate integration on silicon, 2006, Grenoble, France |
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1/f gate tunneling current noise model of ultrathin oxide MOSFETs2006 IEEE International Conference on Microelectronic Test Structures, Mar 2006, Austin, France. pp.193-198, ⟨10.1109/ICMTS.2006.1614302⟩ |
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Impact of Random Telegraph Signal in CMOS Image Sensors for Low-Light Levels2006 Proceedings of the 32nd European Solid-State Circuits Conference, Sep 2006, Montreux, France. pp.376-379, ⟨10.1109/ESSCIR.2006.307609⟩ |
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Response of Correlated Double Sampling CMOS Imager Circuit to Random Telegraph Signal Noise2006 International Caribbean Conference on Devices, Circuits and Systems, Apr 2006, Playa del Carmen, Mexico. pp.109-114, ⟨10.1109/ICCDCS.2006.250845⟩ |
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Contributions of Channel Gate and Overlap Gate Currents on 1/f Gate Current Noise for Thin Oxide Gate p-MOSFETsNOISE AND FLUCTUATIONS: 18th International Conference on Noise and Fluctuations - ICNF 2005, 2005, Salamanca (Spain), Spain. pp.243-246, ⟨10.1063/1.2036741⟩ |
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Gate and drain low frequency noise in HfO2 NMOSFETsInternational Conference on Noise and Fluctuations, 2005, Salamanca (Spain), Spain. pp.235-238, ⟨10.1063/1.2036739⟩ |
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Effect of Oxide Thickness and Nitridation Process on PMOS Gate and Drain Low Frequency NoiseInternational Conference on Noise and Fluctuations, 2005, Salamanca (Spain), Spain. pp.323-326, ⟨10.1063/1.2036760⟩ |
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Correlated carrier number-mobility fluctuation model or access resistance noise in p-MOSFETsInternational Conference on Noise in Physical Systems and 1/f Fluctuations, 2003, Prague, Czech Republic |
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Impact of gate current noise on drain current noise in 90 nm CMOS technology33rd European Solid-State Device Research - ESSDERC '03, 2003, Estoril, France. pp.287-290, ⟨10.1109/essderc.2003.1256870⟩ |
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Impact of process scaling on BSIM noise parametersInternational Conference on Noise in Physical Systems and 1/f Fluctuations, 2003, Prague, Czech Republic |
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Discussion on standard 1/f noise models in software packages: SPICE, HSPICE and BSIM3v3--comparison to MOSFET noise data on commercial c025SPIE's First International Symposium on Fluctuations and Noise, 2003, Santa Fe, United States. pp.494, ⟨10.1117/12.497578⟩ |
Multiple-junction photovoltaic cell based on antimonide materialsUnited States, Patent n° : US Patent App. 15/312,570, 2017. 2017 |
Floating-Body SOI Memory: The Scaling TournamentSemiconductor-On-Insulator Materials for Nanoelectronics Applications, pp.393-421, 2011, ⟨10.1007/978-3-642-15868-1_21⟩ |
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Modélisation et caractérisation de structures MOS à diélectrique ultra-fin : application au bruit Basse Fréquence lié au courant de grilleElectronique. Université de Montpellier 2, 2005. Français. ⟨NNT : ⟩ |