
Frédéric Martinez
90
Documents
Publications
Publications
Design strategies for very low bandgap InAs/InAsSb thermophotovoltaic cells15th World Conference on Thermophotovoltaic Generation of Electricity, Oct 2024, Madrid, Spain
Poster de conférence
hal-04723350
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Investigations on a very low bandgap InAs/InAsSb thermophotovoltaic cell: TCAD simulations, band engineering and clean room processingJournées Nationales du Photovoltaïque (JNPV) 2023, Dec 2023, Dourdan, France
Poster de conférence
hal-04423980
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Fabrication, characterization and modeling of III-Sb based multijunction solar cellsLes Houches School of Physics - Physics of solar cells: from basic principles to material science, Apr 2022, Les Houches, France
Poster de conférence
hal-03716806
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InAs/InAsSb superlattice and barrier structure: from photodetectors to thermophotovoltaics cellsPhysics of solar cells: from basic principles to material science. Les Houches school of physics., Apr 2022, Les Houches, France
Poster de conférence
hal-03673053
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Analysis of the performances of a conventional GaAs solar cell operating at up to 200 °CJournées Nationales du Photovoltaïque 2020, Jan 2021, En ligne, France
Poster de conférence
hal-03124559
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Caractérisation et modélisation d’une cellule tandem AlGaAsSb/GaSbJournées Nationales du Photovoltaïque, Nov 2021, Dourdan, France
Poster de conférence
hal-03641823
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Physics of GaAs solar cells operating under thermal stressLes Houches School of Physics - Physics of Solar Cells: from basic principles to advanced characterization, Mar 2020, Les Houches, France
Poster de conférence
hal-03099765
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Transforming a type-II InAs/InAsSb superlattice MWIR photodetector into a thermophotovoltaic cellSPIE Photonics West 2023, Jan 2023, San Francisco, United States
Communication dans un congrès
hal-03995000
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Low bandgap (near-field) TPV: materials and structuresThe 14th World Conference on Thermophotovoltaic Generation of Electricity (TPV-14), Andrej Lenert, May 2023, Online, United States
Communication dans un congrès
hal-04156802
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InAs/InAsSb superlattice thermophotovoltaic cell: how to adapt an infrared photodetector for TPV conversion2nd Workshop on Thermal Radiation to Electrical Energy conversion (TREE), LTeN, Université de Nantes, Oct 2022, Nantes France, France
Communication dans un congrès
hal-04423960
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InAs/InAsSb superlattice thermophotovoltaic cellsWorkshop on Thermal Radiation to Electrical Energy conversion (TREE), Equipe-projet TREE, Nov 2022, Champs sur Marne, France
Communication dans un congrès
hal-03941080
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Modélisation de cellules solaires multijonctions III-Sb réalistesJournées Nationales du Photovoltaïque, Nov 2022, Dourdan, France
Communication dans un congrès
hal-03891346
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Harvesting mid-wave infrared radiation with type-II InAs/InAsSb superlattices: from photodetectors to thermophotovoltaics cells13th Conference on Thermophotovoltaic Generation of Electricity (TPV-13), Apr 2022, Miyazaki & online (hybrid), Japan
Communication dans un congrès
hal-03673042
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Very-low bandgap thermophotovoltaic cell based on type-II InAs/InAsSb superlattice MWIR photodetectorJournées Nationales du Photovoltaïque (JNPV) 2022, FedPV, Nov 2022, Dourdan, France
Communication dans un congrès
hal-03941158
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Insight into the factors affecting the performances of a conventional GaAs solar cell operating at up to 200 °CJournées Nationales du Photovoltaïque 2021, Nov 2021, Dourdan, France
Communication dans un congrès
hal-03515509
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Characterization and numerical analysis of III-Sb tandem solar cellsJournées Nationales du Photovoltaïque, Dec 2019, Dourdan, France
Communication dans un congrès
hal-02382568
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Potential of AlGaAsSb alloys for GaSb-based multi-junction solar cellsForum of Revolutions in Renewable Energy in 21th Century (FOREN-2019), Oct 2019, Rome, Italy
Communication dans un congrès
hal-02382507
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Characterization and pseudo-3D modeling of GaSb solar cells for high-concentration photovoltaics36th European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC), Sep 2019, Marseille, France
Communication dans un congrès
hal-02382578
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Investigation of GaSb solar cell with an AlGaAsSb window layer for applications as a bottom subcell of 4-junction solar cellsJournées Nationales du Photovoltaïque, Dec 2018, Dourdan, France
Communication dans un congrès
hal-02061904
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Investigation of antimonide-based semiconductors for high-efficiency multi-junction solar cells2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC), Jun 2018, Waikoloa Village, France. pp.0937-0942
Communication dans un congrès
hal-02052823
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Capacitance voltage profiling to determine doping in InAs/GaSb LWIR SL photodetector structuresPhotonic West Conference, Feb 2017, San Francisco, United States. ⟨10.1117/12.2251153⟩
Communication dans un congrès
hal-01628430
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Contacts ohmiques pour cellules solaires à base de matériaux antimoniures dans le cadre d'applications aux fortes concentrations solairesJournées Nationales sur l'Energie Solaire, Jun 2016, Perpignan, France
Communication dans un congrès
hal-01758770
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Impact de la résistance série sous forte concentration solaire dans le cas de cellules antimoniuresJournées Nationales du PhotoVoltaïque, Dec 2016, Dourdan, France
Communication dans un congrès
hal-01758778
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Interest of Antimonide Compounds Based Multijunction Cells for High Concentrating Photovoltaics20th Sede Boqer Symposium on Solar Electricity Production, Sep 2016, Sede Boqer, Israel
Communication dans un congrès
hal-01758669
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Thickness characterization by capacitance derivative in FDSOI p-i-n gated diodes2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Jan 2015, Bologna, France. ⟨10.1109/ULIS.2015.7063745⟩
Communication dans un congrès
hal-01758618
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Multi-junctions PV concentrator solar cells, state of the art. Interest of antimonide compoundsEMRS Spring meeting, 2015, Lille, France
Communication dans un congrès
hal-01907417
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Noise measurements in electronic devicesInternational Instrumentation and Measurement Technology Conference, 2014., 2014, Montevideo, Uruguay
Communication dans un congrès
hal-01906177
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Structures à base de matériaux antimoniures pour la conversion de l’énergie solaire concentrée4ème JNPV, 2014, Dourdan, France
Communication dans un congrès
hal-01906185
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Numerical simulation of non-homogeneous 2D-CNT structuresNoise and Fluctuations (ICNF), 2013 22nd International Conference on, 2013, Montpellier, France
Communication dans un congrès
hal-01656855
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Percolation in 2D Carbon Nanotube Thin FilmsSymposium on Design, Test, Integration and Packaging of Mems/Moems (Dtip), 2012, Cannes, France
Communication dans un congrès
hal-02066877
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Caractérisation de contacts et de matériaux par la mesure du bruit Basse Fréquence13èmes Journées de la Matière Condensée - JMC13, Aug 2012, Montpellier, France
Communication dans un congrès
hal-02053302
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A surface potential based compact model for lightly doped FD SOI MOSFETs with ultra-thin body12th International Conference on Ultimate Integration on Silicon (ULIS), Mar 2011, Cork, Ireland. pp.1-4, ⟨10.1109/ulis.2011.5757972⟩
Communication dans un congrès
hal-02066661
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A simple analytical and explicit compact model for the drain current of UTB SOI MOSFETs2011 Spanish Conference on Electron Devices (CDE), Feb 2011, Palma de Mallorca, Spain. pp.1-4, ⟨10.1109/sced.2011.5744174⟩
Communication dans un congrès
hal-02066647
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Numerical Model of Transport in Microcrystalline Silicon FilmsInternational Conference on Amorphous and Nanocrystalline Semiconductors (ICANS 24), 2011, Tokyo, Japan
Communication dans un congrès
hal-02066870
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Analytical modelling of Multiple-gate MOSFETs2011 Spanish Conference on Electron Devices (CDE), Feb 2011, Palma de Mallorca, Spain. pp.1-4, ⟨10.1109/SCED.2011.5744159⟩
Communication dans un congrès
hal-02066666
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Comparison of the effects of different surfactants on electrical parameters in Carbon Nanotube thin films2011 21st International Conference on Noise and Fluctuations (ICNF), Jun 2011, Toronto, France. pp.472-475, ⟨10.1109/ICNF.2011.5994372⟩
Communication dans un congrès
hal-02066670
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1T-DRAM at the 22nm technology node and beyond: An alternative to DRAM with high-k storage capacitor2011 IEEE 14th International Symposium on Electrets ISE 14, Aug 2011, Montpellier, France. pp.93-94
Communication dans un congrès
hal-02052982
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Low frequency noise modeling of SOI MOSFETs using Green's function approachInternational Conference on Noise and Fluctuations (ICNF), Jun 2011, Toronto, Canada. pp.348-351, ⟨10.1109/ICNF.2011.5994339⟩
Communication dans un congrès
hal-02066863
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1/f noise in strained SiGe on Insulator MOSFETs2011 21st International Conference on Noise and Fluctuations (ICNF), Jun 2011, Toronto, Canada. pp.344-347, ⟨10.1109/ICNF.2011.5994338⟩
Communication dans un congrès
hal-02063012
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Evaluation of Interface Trap Density in Advanced SOI MOSFETs219th ECS Meeting, 2011, Montreal, Canada. pp.103-108, ⟨10.1149/1.3570783⟩
Communication dans un congrès
hal-02066785
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DC and low frequency noise characterization of Multi gate N-MOSFET in a bulk technology by integrating polysilicon filled trenchesULtimate Integration on Silicon 2010, 2010, Glasgow, United Kingdom
Communication dans un congrès
hal-02092983
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Impact of Process Options on Low Frequency Noise in Germanium on- Insulator (GeOI) high-K & Metal Gate pMOSFETsInternational Conference on Ultimate Integration on Silicon, 2010, Glasgow, United Kingdom
Communication dans un congrès
hal-02064876
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Parasitic back-inferface conduction in planar and triple-gate SOI transistors2010 IEEE International SOI Conference, Oct 2010, San Diego, California, United States
Communication dans un congrès
hal-00604642
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Low Frequency Noise Sources in Ge Resistances elaborated on GeOI WafersNOISE AND FLUCTUATIONS: 20th International Conference on Noice and Fluctuations (ICNF-2009), 2009, Pisa (Italy), France. pp.105-108, ⟨10.1063/1.3140405⟩
Communication dans un congrès
hal-02093006
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Interface oxide trap characterisation in germanium-on-insulator 0.12 μm PMOS transistors by drain current noise measurements2009 10th International Conference on Ultimate Integration on Silicon (ULIS, Mar 2009, Aachen, Germany. pp.87-90, ⟨10.1109/ULIS.2009.4897545⟩
Communication dans un congrès
hal-02066839
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1∕f noise, transport and percolation in carbon nanotube film field-effect transistors: simulation and experimentsNOISE AND FLUCTUATIONS: 20th International Conference on Noice and Fluctuations (ICNF-2009), 2009, Pisa (Italy), France. pp.85-88, ⟨10.1063/1.3140564⟩
Communication dans un congrès
hal-02064889
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Numerical modeling of low frequency noise in ultrathin oxide MOSFETsNoise and fluctuations : 20th International Conference on Noise and Fluctuations : ICNF 2009, Jun 2009, Pisa, Italy. pp.285-290
Communication dans un congrès
hal-02052981
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Simulation of transport and 1/f noise in carbon nanotube filmsEdison, 2009, Montpellier, France. pp.012117, ⟨10.1088/1742-6596/193/1/012117⟩
Communication dans un congrès
hal-02063024
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1∕f noise in 0.12 μm P-MOSFETs with High-k and metal gate fabricated in a Si Process Line on 200 mm GeOI WafersNOISE AND FLUCTUATIONS: 20th International Conference on Noice and Fluctuations (ICNF-2009), 2009, Pisa (Italy), Italy. pp.259-262, ⟨10.1063/1.3140445⟩
Communication dans un congrès
hal-02063016
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Extraction of slow oxide trap profiles by low-frequency noise analysis: Application to hot-electron-induced degradation2008 9th International Conference on Ultimate Integration on Silicon (ULIS), Mar 2008, Udine, France. pp.155-158, ⟨10.1109/ULIS.2008.4527162⟩
Communication dans un congrès
hal-02052984
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Low Frequency Noise of Ultrathin Oxide MOSFETs using Green’s Function ApproachNOISE AND FLUCTUATIONS: 19th International Conference on Noise and Fluctuations; ICNF 2007, 2007, Tokyo (Japan), Japan. pp.63-66, ⟨10.1063/1.2759637⟩
Communication dans un congrès
hal-02063018
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Low frequency gate noise modeling of ultrathin oxide MOSFETsSPIE Fourth International Symposium on Fluctuations and Noise, 2007, Florence, Italy. pp.66001O, ⟨10.1117/12.726920⟩
Communication dans un congrès
hal-02066844
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Impact of Random Telegraph Signal in CMOS Image Sensors for Low-Light Levels2006 Proceedings of the 32nd European Solid-State Circuits Conference, Sep 2006, Montreux, France. pp.376-379, ⟨10.1109/ESSCIR.2006.307609⟩
Communication dans un congrès
hal-02063033
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1/f gate tunneling current noise model of ultrathin oxide MOSFETs2006 IEEE International Conference on Microelectronic Test Structures, Mar 2006, Austin, France. pp.193-198, ⟨10.1109/ICMTS.2006.1614302⟩
Communication dans un congrès
hal-02064884
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Physical Low Frequency Noise Sources Associated to Drain and Gate Currents of Ultrathin Gate oxide on n-MOSFETsUltimate integration on silicon, 2006, Grenoble, France
Communication dans un congrès
hal-02066884
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Response of Correlated Double Sampling CMOS Imager Circuit to Random Telegraph Signal Noise2006 International Caribbean Conference on Devices, Circuits and Systems, Apr 2006, Playa del Carmen, Mexico. pp.109-114, ⟨10.1109/ICCDCS.2006.250845⟩
Communication dans un congrès
hal-02066885
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Gate and drain low frequency noise in HfO2 NMOSFETsInternational Conference on Noise and Fluctuations, 2005, Salamanca (Spain), Spain. pp.235-238, ⟨10.1063/1.2036739⟩
Communication dans un congrès
hal-02066806
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Contributions of Channel Gate and Overlap Gate Currents on 1/f Gate Current Noise for Thin Oxide Gate p-MOSFETsNOISE AND FLUCTUATIONS: 18th International Conference on Noise and Fluctuations - ICNF 2005, 2005, Salamanca (Spain), Spain. pp.243-246, ⟨10.1063/1.2036741⟩
Communication dans un congrès
hal-02066689
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Effect of Oxide Thickness and Nitridation Process on PMOS Gate and Drain Low Frequency NoiseInternational Conference on Noise and Fluctuations, 2005, Salamanca (Spain), Spain. pp.323-326, ⟨10.1063/1.2036760⟩
Communication dans un congrès
hal-02066777
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Impact of gate current noise on drain current noise in 90 nm CMOS technology33rd European Solid-State Device Research - ESSDERC '03, 2003, Estoril, France. pp.287-290, ⟨10.1109/essderc.2003.1256870⟩
Communication dans un congrès
hal-02066811
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Impact of process scaling on BSIM noise parametersInternational Conference on Noise in Physical Systems and 1/f Fluctuations, 2003, Prague, Czech Republic
Communication dans un congrès
hal-02066829
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Correlated carrier number-mobility fluctuation model or access resistance noise in p-MOSFETsInternational Conference on Noise in Physical Systems and 1/f Fluctuations, 2003, Prague, Czech Republic
Communication dans un congrès
hal-02066703
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Discussion on standard 1/f noise models in software packages: SPICE, HSPICE and BSIM3v3--comparison to MOSFET noise data on commercial c025SPIE's First International Symposium on Fluctuations and Noise, 2003, Santa Fe, United States. pp.494, ⟨10.1117/12.497578⟩
Communication dans un congrès
hal-02066758
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Multiple-junction photovoltaic cell based on antimonide materialsUnited States, Patent n° : US Patent App. 15/312,570, 2017. 2017
Brevet
hal-02052932
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Floating-Body SOI Memory: The Scaling TournamentSemiconductor-On-Insulator Materials for Nanoelectronics Applications, pp.393-421, 2011, ⟨10.1007/978-3-642-15868-1_21⟩
Chapitre d'ouvrage
istex
hal-02066793
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Modélisation et caractérisation de structures MOS à diélectrique ultra-fin : application au bruit Basse Fréquence lié au courant de grilleElectronique. Université de Montpellier 2, 2005. Français. ⟨NNT : ⟩
Thèse
tel-02068167
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