Frédéric Martinez

Documents

Publications

Design strategies for very low bandgap InAs/InAsSb thermophotovoltaic cells

Basile Roux , Jean-Philippe Perez , Frédéric Martinez , S. Parola , L. del Campo et al.

15th World Conference on Thermophotovoltaic Generation of Electricity, Oct 2024, Madrid, Spain

Poster de conférence hal-04723350v1

Investigations on a very low bandgap InAs/InAsSb thermophotovoltaic cell: TCAD simulations, band engineering and clean room processing

Basile Roux , Maxime Bouschet , S. Parola , Frédéric Martinez , Philippe Christol et al.

Journées Nationales du Photovoltaïque (JNPV) 2023, Dec 2023, Dourdan, France

Poster de conférence hal-04423980v1

Fabrication, characterization and modeling of III-Sb based multijunction solar cells

Lucas Gavotto , S. Parola , Frédéric Martinez , Yvan Cuminal

Les Houches School of Physics - Physics of solar cells: from basic principles to material science, Apr 2022, Les Houches, France

Poster de conférence hal-03716806v1

InAs/InAsSb superlattice and barrier structure: from photodetectors to thermophotovoltaics cells

Basile Roux , Maxime Bouschet , S. Parola , Frédéric Martinez , Philippe Christol et al.

Physics of solar cells: from basic principles to material science. Les Houches school of physics., Apr 2022, Les Houches, France

Poster de conférence hal-03673053v1

Analysis of the performances of a conventional GaAs solar cell operating at up to 200 °C

Paul Oublon , Frédéric Martinez , S. Parola , Yvan Cuminal , Rodolphe Vaillon

Journées Nationales du Photovoltaïque 2020, Jan 2021, En ligne, France

Poster de conférence hal-03124559v1

Caractérisation et modélisation d’une cellule tandem AlGaAsSb/GaSb

Lucas Gavotto , Joanna Kret , S. Parola , Frédéric Martinez , Yves Rouillard et al.

Journées Nationales du Photovoltaïque, Nov 2021, Dourdan, France

Poster de conférence hal-03641823v1

Physics of GaAs solar cells operating under thermal stress

Paul Oublon , Frédéric Martinez , S. Parola , Daniel Chemisana , Alexis Vossier et al.

Les Houches School of Physics - Physics of Solar Cells: from basic principles to advanced characterization, Mar 2020, Les Houches, France

Poster de conférence hal-03099765v1

Transforming a type-II InAs/InAsSb superlattice MWIR photodetector into a thermophotovoltaic cell

Basile Roux , Maxime Bouschet , S. Parola , Frédéric Martinez , Philippe Christol et al.

SPIE Photonics West 2023, Jan 2023, San Francisco, United States

Communication dans un congrès hal-03995000v1

Low bandgap (near-field) TPV: materials and structures

Rodolphe Vaillon , Basile Roux , Christophe Lucchesi , Nacira Hanouf , Dilek Cakiroglu et al.

The 14th World Conference on Thermophotovoltaic Generation of Electricity (TPV-14), Andrej Lenert, May 2023, Online, United States

Communication dans un congrès hal-04156802v1

Modélisation de cellules solaires multijonctions III-Sb réalistes

Lucas Gavotto , S. Parola , Frédéric Martinez , Yves Rouillard , Yvan Cuminal

Journées Nationales du Photovoltaïque, Nov 2022, Dourdan, France

Communication dans un congrès hal-03891346v1

InAs/InAsSb superlattice thermophotovoltaic cell: how to adapt an infrared photodetector for TPV conversion

Basile Roux , S. Parola , Frédéric Martinez , Philippe Christol , Jean-Philippe Perez et al.

2nd Workshop on Thermal Radiation to Electrical Energy conversion (TREE), LTeN, Université de Nantes, Oct 2022, Nantes France, France

Communication dans un congrès hal-04423960v1

InAs/InAsSb superlattice thermophotovoltaic cells

Basile Roux , Maxime Bouschet , S. Parola , Frédéric Martinez , Philippe Christol et al.

Workshop on Thermal Radiation to Electrical Energy conversion (TREE), Equipe-projet TREE, Nov 2022, Champs sur Marne, France

Communication dans un congrès hal-03941080v1

Harvesting mid-wave infrared radiation with type-II InAs/InAsSb superlattices: from photodetectors to thermophotovoltaics cells

Basile Roux , Maxime Bouschet , S. Parola , Frédéric Martinez , Philippe Christol et al.

13th Conference on Thermophotovoltaic Generation of Electricity (TPV-13), Apr 2022, Miyazaki & online (hybrid), Japan

Communication dans un congrès hal-03673042v1

Very-low bandgap thermophotovoltaic cell based on type-II InAs/InAsSb superlattice MWIR photodetector

Basile Roux , Maxime Bouschet , S. Parola , Frédéric Martinez , Philippe Christol et al.

Journées Nationales du Photovoltaïque (JNPV) 2022, FedPV, Nov 2022, Dourdan, France

Communication dans un congrès hal-03941158v1

Insight into the factors affecting the performances of a conventional GaAs solar cell operating at up to 200 °C

Paul Oublon , Alexandre Arnoult , Maxime Levillayer , Frédéric Martinez , Inès Massiot et al.

Journées Nationales du Photovoltaïque 2021, Nov 2021, Dourdan, France

Communication dans un congrès hal-03515509v1

Potential of AlGaAsSb alloys for GaSb-based multi-junction solar cells

S. Parola , Joanna Kret , A. Vauthelin , Julie Tournet , Frédéric Martinez et al.

Forum of Revolutions in Renewable Energy in 21th Century (FOREN-2019), Oct 2019, Rome, Italy

Communication dans un congrès hal-02382507v1

Characterization and numerical analysis of III-Sb tandem solar cells

Joanna Kret , S. Parola , J. Tournet , Yves Rouillard , Eric Tournié et al.

Journées Nationales du Photovoltaïque, Dec 2019, Dourdan, France

Communication dans un congrès hal-02382568v1

Characterization and pseudo-3D modeling of GaSb solar cells for high-concentration photovoltaics

Joanna Kret , S. Parola , Alexandre Vauthelin , Frédéric Martinez , Julie Tournet et al.

36th European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC), Sep 2019, Marseille, France

Communication dans un congrès hal-02382578v1

Investigation of GaSb solar cell with an AlGaAsSb window layer for applications as a bottom subcell of 4-junction solar cells

Joanna Kret , Stéphanie Parola , Alexandre Vauthelin , Julie Tournet , Yves Rouillard et al.

Journées Nationales du Photovoltaïque, Dec 2018, Dourdan, France

Communication dans un congrès hal-02061904v1

Investigation of antimonide-based semiconductors for high-efficiency multi-junction solar cells

Stéphanie Parola , Alexandre Vauthelin , Frédéric Martinez , Julie Tournet , Joanna El Husseini et al.

2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC), Jun 2018, Waikoloa Village, France. pp.0937-0942

Communication dans un congrès hal-02052823v1

Capacitance voltage profiling to determine doping in InAs/GaSb LWIR SL photodetector structures

Remi Rossignol , Jean-Baptiste Rodriguez , Quentin Durlin , H. Ait-Kaci , Jean-Philippe Perez et al.

Photonic West Conference, Feb 2017, San Francisco, United States. ⟨10.1117/12.2251153⟩

Communication dans un congrès hal-01628430v1

Contacts ohmiques pour cellules solaires à base de matériaux antimoniures dans le cadre d'applications aux fortes concentrations solaires

A. Vauthelin , Stéphanie Parola , Frédéric Martinez , Y. Cuminal

Journées Nationales sur l'Energie Solaire, Jun 2016, Perpignan, France

Communication dans un congrès hal-01758770v1

Interest of Antimonide Compounds Based Multijunction Cells for High Concentrating Photovoltaics

Stéphanie Parola , A. Vauthelin , E. Giudicelli , Frédéric Martinez , Y. Cuminal

20th Sede Boqer Symposium on Solar Electricity Production, Sep 2016, Sede Boqer, Israel

Communication dans un congrès hal-01758669v1

Impact de la résistance série sous forte concentration solaire dans le cas de cellules antimoniures

A. Vauthelin , Stéphanie Parola , Frédéric Martinez , Y. Cuminal

Journées Nationales du PhotoVoltaïque, Dec 2016, Dourdan, France

Communication dans un congrès hal-01758778v1

Multi-junctions PV concentrator solar cells, state of the art. Interest of antimonide compounds

Y. Cuminal , E. Giudiccelli , F. Martinez , J. El Huseinni

EMRS Spring meeting, 2015, Lille, France

Communication dans un congrès hal-01907417v1

Thickness characterization by capacitance derivative in FDSOI p-i-n gated diodes

C. Navarro , M. Bawedin , F. Andrieu , J. Cluzel , Y. Solaro et al.

2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Jan 2015, Bologna, France. ⟨10.1109/ULIS.2015.7063745⟩

Communication dans un congrès hal-01758618v1

Noise measurements in electronic devices

F. Pascal , A. Hoffmann , F. Martinez

International Instrumentation and Measurement Technology Conference, 2014., 2014, Montevideo, Uruguay

Communication dans un congrès hal-01906177v1

Structures à base de matériaux antimoniures pour la conversion de l’énergie solaire concentrée

Y. Cuminal , E. Giudiccelli , A. Pérona , F. Martinez , J. Elhuseinni et al.

4ème JNPV, 2014, Dourdan, France

Communication dans un congrès hal-01906185v1

Numerical simulation of non-homogeneous 2D-CNT structures

G. Sassine , F. Martinez , F. Pascal , A. Hoffmann

Noise and Fluctuations (ICNF), 2013 22nd International Conference on, 2013, Montpellier, France

Communication dans un congrès hal-01656855v1

Percolation in 2D Carbon Nanotube Thin Films

Frédéric Martinez , Gilbert Sassine , Fabien Pascal , Alain Hoffmann

Symposium on Design, Test, Integration and Packaging of Mems/Moems (Dtip), 2012, Cannes, France

Communication dans un congrès hal-02066877v1

Caractérisation de contacts et de matériaux par la mesure du bruit Basse Fréquence

Fabien Pascal , Jérémy Raoult , Bruno Sagnes , Marcelino Seif , Frédéric Martinez et al.

13èmes Journées de la Matière Condensée - JMC13, Aug 2012, Montpellier, France

Communication dans un congrès hal-02053302v1

A simple analytical and explicit compact model for the drain current of UTB SOI MOSFETs

F. Lime , R. Ritzenthaler , B. Iñiguez , E. Miranda , Frédéric Martinez et al.

2011 Spanish Conference on Electron Devices (CDE), Feb 2011, Palma de Mallorca, Spain. pp.1-4, ⟨10.1109/sced.2011.5744174⟩

Communication dans un congrès hal-02066647v1

A surface potential based compact model for lightly doped FD SOI MOSFETs with ultra-thin body

J. El Husseini , Frédéric Martinez , M. Bawedin , M. Valenza , R. Ritzenthaler et al.

12th International Conference on Ultimate Integration on Silicon (ULIS), Mar 2011, Cork, Ireland. pp.1-4, ⟨10.1109/ulis.2011.5757972⟩

Communication dans un congrès hal-02066661v1

Comparison of the effects of different surfactants on electrical parameters in Carbon Nanotube thin films

G. Sassine , Frédéric Martinez , F. Pascal , A. Hoffmann , E. Anglaret

2011 21st International Conference on Noise and Fluctuations (ICNF), Jun 2011, Toronto, France. pp.472-475, ⟨10.1109/ICNF.2011.5994372⟩

Communication dans un congrès hal-02066670v1

Numerical Model of Transport in Microcrystalline Silicon Films

Jimmy Armand , Frédéric Martinez , Yvan Cuminal

International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS 24), 2011, Tokyo, Japan

Communication dans un congrès hal-02066870v1

Analytical modelling of Multiple-gate MOSFETs

R. Ritzenthaler , F. Lime , B. Iñiguez , E. Miranda , Frédéric Martinez et al.

2011 Spanish Conference on Electron Devices (CDE), Feb 2011, Palma de Mallorca, Spain. pp.1-4, ⟨10.1109/SCED.2011.5744159⟩

Communication dans un congrès hal-02066666v1

Low frequency noise modeling of SOI MOSFETs using Green's function approach

J. Elhusseini , Frédéric Martinez , J. Armand , M. Bawedin , M. Valenza et al.

International Conference on Noise and Fluctuations (ICNF), Jun 2011, Toronto, Canada. pp.348-351, ⟨10.1109/ICNF.2011.5994339⟩

Communication dans un congrès hal-02066863v1

1T-DRAM at the 22nm technology node and beyond: An alternative to DRAM with high-k storage capacitor

M. Bawedin , S. Cristoloveanu , A. Hubert , G. Guegan , S. Chang et al.

2011 IEEE 14th International Symposium on Electrets ISE 14, Aug 2011, Montpellier, France. pp.93-94

Communication dans un congrès hal-02052982v1

Evaluation of Interface Trap Density in Advanced SOI MOSFETs

Mayline Bawedin , Sorin Cristoloveanu , Sungjae Chang , Matteo Valenza , Frédéric Martinez et al.

219th ECS Meeting, 2011, Montreal, Canada. pp.103-108, ⟨10.1149/1.3570783⟩

Communication dans un congrès hal-02066785v1

1/f noise in strained SiGe on Insulator MOSFETs

M. Valenza , J. El Husseini , J. Gyani , Frédéric Martinez , C. Le Royer et al.

2011 21st International Conference on Noise and Fluctuations (ICNF), Jun 2011, Toronto, Canada. pp.344-347, ⟨10.1109/ICNF.2011.5994338⟩

Communication dans un congrès hal-02063012v1

DC and low frequency noise characterization of Multi gate N-MOSFET in a bulk technology by integrating polysilicon filled trenches

J. El Husseini , J. Gyani , Frédéric Martinez , M. Valenza , B Ramadout et al.

ULtimate Integration on Silicon 2010, 2010, Glasgow, United Kingdom

Communication dans un congrès hal-02092983v1

Impact of Process Options on Low Frequency Noise in Germanium on- Insulator (GeOI) high-K & Metal Gate pMOSFETs

J. Gyani , Frédéric Martinez , S. Soliverès , M. Valenza , C. Le Royer et al.

International Conference on Ultimate Integration on Silicon, 2010, Glasgow, United Kingdom

Communication dans un congrès hal-02064876v1

Parasitic back-inferface conduction in planar and triple-gate SOI transistors

R. Ritzenthaler , F. Lime , M. Ricoma , F. Martinez , O. Faynot et al.

2010 IEEE International SOI Conference, Oct 2010, San Diego, California, United States

Communication dans un congrès hal-00604642v1

Low Frequency Noise Sources in Ge Resistances elaborated on GeOI Wafers

J. Gyani , S. Soliverès , Frédéric Martinez , M. Valenza , C. Le Royer et al.

NOISE AND FLUCTUATIONS: 20th International Conference on Noice and Fluctuations (ICNF-2009), 2009, Pisa (Italy), France. pp.105-108, ⟨10.1063/1.3140405⟩

Communication dans un congrès hal-02093006v1

Interface oxide trap characterisation in germanium-on-insulator 0.12 μm PMOS transistors by drain current noise measurements

J. Gyani , S. Soliverès , Frédéric Martinez , M. Valenza , C. Le Royer et al.

2009 10th International Conference on Ultimate Integration on Silicon (ULIS, Mar 2009, Aachen, Germany. pp.87-90, ⟨10.1109/ULIS.2009.4897545⟩

Communication dans un congrès hal-02066839v1

Simulation of transport and 1/f noise in carbon nanotube films

S. Soliverès , Frédéric Martinez , A Hoffmann , F. Pascal

Edison, 2009, Montpellier, France. pp.012117, ⟨10.1088/1742-6596/193/1/012117⟩

Communication dans un congrès hal-02063024v1

1∕f noise, transport and percolation in carbon nanotube film field-effect transistors: simulation and experiments

S. Soliverès , Frédéric Martinez , A. Hoffmann , F. Pascal

NOISE AND FLUCTUATIONS: 20th International Conference on Noice and Fluctuations (ICNF-2009), 2009, Pisa (Italy), France. pp.85-88, ⟨10.1063/1.3140564⟩

Communication dans un congrès hal-02064889v1

Numerical modeling of low frequency noise in ultrathin oxide MOSFETs

Frédéric Martinez , M. Valenza , Jimmy Armand

Noise and fluctuations : 20th International Conference on Noise and Fluctuations : ICNF 2009, Jun 2009, Pisa, Italy. pp.285-290

Communication dans un congrès hal-02052981v1

1∕f noise in 0.12 μm P-MOSFETs with High-k and metal gate fabricated in a Si Process Line on 200 mm GeOI Wafers

J. Gyani , Frédéric Martinez , S. Soliverès , M. Valenza , C. Le Royer et al.

NOISE AND FLUCTUATIONS: 20th International Conference on Noice and Fluctuations (ICNF-2009), 2009, Pisa (Italy), Italy. pp.259-262, ⟨10.1063/1.3140445⟩

Communication dans un congrès hal-02063016v1

Extraction of slow oxide trap profiles by low-frequency noise analysis: Application to hot-electron-induced degradation

J. Armand , Frédéric Martinez , J. Gyani , P. Benoit , M. Valenza et al.

2008 9th International Conference on Ultimate Integration on Silicon (ULIS), Mar 2008, Udine, France. pp.155-158, ⟨10.1109/ULIS.2008.4527162⟩

Communication dans un congrès hal-02052984v1

Low Frequency Noise of Ultrathin Oxide MOSFETs using Green’s Function Approach

J. Armand , Frédéric Martinez , M. Valenza

NOISE AND FLUCTUATIONS: 19th International Conference on Noise and Fluctuations; ICNF 2007, 2007, Tokyo (Japan), Japan. pp.63-66, ⟨10.1063/1.2759637⟩

Communication dans un congrès hal-02063018v1

Low frequency gate noise modeling of ultrathin oxide MOSFETs

Frédéric Martinez , M. Valenza

SPIE Fourth International Symposium on Fluctuations and Noise, 2007, Florence, Italy. pp.66001O, ⟨10.1117/12.726920⟩

Communication dans un congrès hal-02066844v1

Physical Low Frequency Noise Sources Associated to Drain and Gate Currents of Ultrathin Gate oxide on n-MOSFETs

Frédéric Martinez , Guillaume Neau , Matteo Valenza , J.C. Vildeuil

Ultimate integration on silicon, 2006, Grenoble, France

Communication dans un congrès hal-02066884v1

Impact of Random Telegraph Signal in CMOS Image Sensors for Low-Light Levels

C. Leyris , Frédéric Martinez , M. Valenza , A. Hoffmann , C. Vildeuil et al.

2006 Proceedings of the 32nd European Solid-State Circuits Conference, Sep 2006, Montreux, France. pp.376-379, ⟨10.1109/ESSCIR.2006.307609⟩

Communication dans un congrès hal-02063033v1

1/f gate tunneling current noise model of ultrathin oxide MOSFETs

Frédéric Martinez , S. Soliverès , C. Leyris , M. Valenza

2006 IEEE International Conference on Microelectronic Test Structures, Mar 2006, Austin, France. pp.193-198, ⟨10.1109/ICMTS.2006.1614302⟩

Communication dans un congrès hal-02064884v1

Response of Correlated Double Sampling CMOS Imager Circuit to Random Telegraph Signal Noise

C. Leyris , J-C. Vildeuil , F. Roy , Frédéric Martinez , M. Valenza et al.

2006 International Caribbean Conference on Devices, Circuits and Systems, Apr 2006, Playa del Carmen, Mexico. pp.109-114, ⟨10.1109/ICCDCS.2006.250845⟩

Communication dans un congrès hal-02066885v1

Contributions of Channel Gate and Overlap Gate Currents on 1/f Gate Current Noise for Thin Oxide Gate p-MOSFETs

Frédéric Martinez , A. Laigle , Alain Hoffmann , M. Valenza , A. Veloso et al.

NOISE AND FLUCTUATIONS: 18th International Conference on Noise and Fluctuations - ICNF 2005, 2005, Salamanca (Spain), Spain. pp.243-246, ⟨10.1063/1.2036741⟩

Communication dans un congrès hal-02066689v1

Gate and drain low frequency noise in HfO2 NMOSFETs

T. Nguyen , M. Valenza , Frédéric Martinez , Guillaume Neau , J.-C. Vildeuil et al.

International Conference on Noise and Fluctuations, 2005, Salamanca (Spain), Spain. pp.235-238, ⟨10.1063/1.2036739⟩

Communication dans un congrès hal-02066806v1

Effect of Oxide Thickness and Nitridation Process on PMOS Gate and Drain Low Frequency Noise

Frédéric Martinez , C Leyris , Matteo Valenza , Alain Hoffmann , F Boeuf et al.

International Conference on Noise and Fluctuations, 2005, Salamanca (Spain), Spain. pp.323-326, ⟨10.1063/1.2036760⟩

Communication dans un congrès hal-02066777v1

Correlated carrier number-mobility fluctuation model or access resistance noise in p-MOSFETs

Alain Hoffmann , M. Valenza , D. Rigaud , A. Laigle , Frédéric Martinez

International Conference on Noise in Physical Systems and 1/f Fluctuations, 2003, Prague, Czech Republic

Communication dans un congrès hal-02066703v1

Impact of gate current noise on drain current noise in 90 nm CMOS technology

M. Valenza , A. Laigle , Frédéric Martinez , A. Hoffmann , D. Rigaud

33rd European Solid-State Device Research - ESSDERC '03, 2003, Estoril, France. pp.287-290, ⟨10.1109/essderc.2003.1256870⟩

Communication dans un congrès hal-02066811v1

Impact of process scaling on BSIM noise parameters

M Valenza , A Hoffmann , A Eya'a Mvongbote , Frédéric Martinez , A Laigle et al.

International Conference on Noise in Physical Systems and 1/f Fluctuations, 2003, Prague, Czech Republic

Communication dans un congrès hal-02066829v1

Discussion on standard 1/f noise models in software packages: SPICE, HSPICE and BSIM3v3--comparison to MOSFET noise data on commercial c025

Matteo Valenza , Alain Hoffmann , Frédéric Martinez , A. Laigle , Joseph Rhayem et al.

SPIE's First International Symposium on Fluctuations and Noise, 2003, Santa Fe, United States. pp.494, ⟨10.1117/12.497578⟩

Communication dans un congrès hal-02066758v1

Characterization and Simulation of AlGaAsSb/GaSb Tandem Solar Cell

Lucas Gavotto , Joanna Kret , S. Parola , Frédéric Martinez , Yves Rouillard et al.

IEEE Journal of Photovoltaics, 2022, pp.1-8. ⟨10.1109/JPHOTOV.2022.3164690⟩

Article dans une revue hal-03695407v1

Investigation of AlInAsSb/GaSb tandem cells – A first step towards GaSb-based multi-junction solar cells

J. Kret , J. Tournet , S. Parola , F. Martinez , D. Chemisana et al.

Solar Energy Materials and Solar Cells, 2021, 219, pp.110795. ⟨10.1016/j.solmat.2020.110795⟩

Article dans une revue hal-02951928v1

Modeling and Characterization of an MBE-Grown Concentrator P-N GaSb Solar Cells Using a Pseudo-3D Model

Joanna Kret , Stéphanie Parola , Frédéric Martinez , Alexandre Vauthelin , Julie Tournet et al.

IEEE Journal of Photovoltaics, 2021, pp.1-8. ⟨10.1109/JPHOTOV.2021.3075290⟩

Article dans une revue hal-03252488v1

Improved efficiency of GaSb solar cells using an Al0.50Ga0.50As0.04Sb0.96 window layer

Stéphanie Parola , Alexandre Vauthelin , Julie Tournet , Joanna Kret , Joanna El Husseini et al.

Solar Energy Materials and Solar Cells, 2019, 200, pp.110042. ⟨10.1016/j.solmat.2019.110042⟩

Article dans une revue hal-02180291v1

GaSb-based solar cells for multi-junction integration on Si substrates

J. Tournet , S. Parola , A. Vauthelin , D. Montesdeoca Cardenes , S. Soresi et al.

Solar Energy Materials and Solar Cells, 2019, 191, pp.444-450. ⟨10.1016/j.solmat.2018.11.035⟩

Article dans une revue hal-02052829v1

Characterization and modeling of electrical transport in undoped hydrogenated microcrystalline silicon

P. Abboud , F. Martinez , R. Amrani , D. Habib , S. Parola et al.

Journal of Non-Crystalline Solids, 2017, 477, pp.42 - 49. ⟨10.1016/j.jnoncrysol.2017.09.045⟩

Article dans une revue hal-01654998v1

Supercoupling effect in short-channel ultrathin fully depleted silicon-on-insulator transistors

C. Navarro , M. Bawedin , F. Andrieu , B. Sagnes , F. Martinez et al.

Journal of Applied Physics, 2015, 118 (18), pp.184504. ⟨10.1063/1.4935453⟩

Article dans une revue hal-01644374v1

Electrical modeling of InSb PiN photodiode for avalanche operation

J. Abautret , J.-P. Perez , A. Evirgen , F. Martinez , Philippe Christol et al.

Journal of Applied Physics, 2013, 113 (18), ⟨10.1063/1.4804956⟩

Article dans une revue hal-01621249v1

Modeling of low frequency noise in FD SOI MOSFETs

J. El Husseini , Frédéric Martinez , M. Valenza , R. Ritzenthaler , F. Lime et al.

Solid-State Electronics, 2013, 90, pp.116 - 120. ⟨10.1016/j.sse.2013.02.043⟩

Article dans une revue hal-01617014v1

Measurements and Simulations of Surfactant's Impact on the Conductivity and the <formula formulatype="inline"><tex Notation="TeX">$\hbox{1}/f$</tex></formula> Noise in Percolation Carbon Nanotube Networks

Gilbert Sassine , Frédéric Martinez , Micheline El Khoury , Fabien Pascal , Alain Hoffmann

IEEE Transactions on Electron Devices, 2012, 59 (10), pp.2803-2808. ⟨10.1109/TED.2012.2210046⟩

Article dans une revue hal-02093021v1

Improved 1/f noise characterization of strained SiGe on insulator MOSFETs fabricated on wafers obtained by the Ge enrichment technique

M. Valenza , J. El Husseini , Frédéric Martinez , M. Bawedin , C. Le Royer et al.

Solid-State Electronics, 2012, 70, pp.27-32. ⟨10.1016/j.sse.2011.11.016⟩

Article dans une revue istex hal-02092993v1

A physical compact DC drain current model for long-channel undoped ultra-thin body (UTB) SOI and asymmetric double-gate (DG) MOSFETs with independent gate operation

F. Lime , R. Ritzenthaler , M. Ricoma , F. Martinez , F. Pascal et al.

Solid-State Electronics, 2011, 57 (1), pp.61 - 66. ⟨10.1016/j.sse.2010.11.034⟩

Article dans une revue istex hal-01653010v1

Modeling of the Boron Emitter Formation Process from BCl<sub>3</sub> Diffusion for N-Type Silicon Solar Cells Processing

Jimmy Armand , Cyril Oliver , Frédéric Martinez , Bachir Semmache , M. Gauthier et al.

Advanced Materials Research, 2011, 324, pp.261-264. ⟨10.4028/www.scientific.net/AMR.324.261⟩

Article dans une revue hal-01791370v1

A comparative 1/f noise study of GeOI wafers obtained by the Ge enrichment technique and the Smart Cut technology

M. Valenza , J. El Husseini , J. Gyani , Frédéric Martinez , M. Bawedin et al.

Microelectronic Engineering, 2011, 88 (7), pp.1298-1300. ⟨10.1016/j.mee.2011.03.090⟩

Article dans une revue istex hal-02064898v1

New numerical low frequency noise model for front and buried oxide trap density characterization in FDSOI MOSFETs

J. El Husseini , Frédéric Martinez , J. Armand , M. Bawedin , M. Valenza et al.

Microelectronic Engineering, 2011, 88 (7), pp.1286-1290. ⟨10.1016/j.mee.2011.03.095⟩

Article dans une revue istex hal-02093037v1

Characterization of impact of process options in Germanium-On-Insulator (GeOI) high-k & metal gate pMOSFETs by low-frequency noise

M. Valenza , J. Gyani , F. Martinez , S. Soliverès , C. Le Royer et al.

Solid-State Electronics, 2011, 59 (1), pp.34 - 38. ⟨10.1016/j.sse.2011.01.015⟩

Article dans une revue istex hal-01653011v1

dc and low frequency noise analysis of Fowler–Nordheim stress of n-channel metal-oxide semiconductor field-effect transistors processed in a 65 nm technology

J. Armand , Frédéric Martinez , P. Benoit , M. Valenza , E. Vincent et al.

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, 2009, 27 (3), pp.1129. ⟨10.1116/1.3130166⟩

Article dans une revue hal-02066715v1

Investigation of 1/f noise in germanium-on-insulator 0.12μm PMOS transistors from weak to strong inversion

F. Martinez , J. Gyani , M. Valenza , S. Soliverès , C. Le Royer et al.

Solid-State Electronics, 2009, 53 (12), pp.1268 - 1272. ⟨10.1016/j.sse.2009.10.011⟩

Article dans une revue istex hal-01653006v1

N-MOSFET oxide trap characterization induced by nitridation process using R.T.S. noise analysis

C. Leyris , F. Martinez , A. Hoffmann , M. Valenza , J.C. Vildeuil

Microelectronics Reliability, 2007, 47 (1), pp.41-45. ⟨10.1016/j.microrel.2006.02.010⟩

Article dans une revue istex hal-00327634v1

Random Telegraph Signal noise : a sensitive and non-destructive tool for gate oxide single trap characterization

C. Leyris , F. Martinez , M. Valenza , A. Hoffmann , J.C. Vildeuil

Microelectronics Reliability, 2007, 47 (4-5), pp.573-576. ⟨10.1016/j.microrel.2007.01.034⟩

Article dans une revue istex hal-00327632v1

Slow oxide trap density profile extraction using gate current low-frequency noise in ultrathin oxide MOSFETs

J. Armand , F. Martinez , M. Valenza , K. Rochereau , E. Vincent

Microelectronic Engineering, 2007, 84 (9-10), pp.2382-2385. ⟨10.1016/j.mee.2007.04.099⟩

Article dans une revue istex hal-00327407v1

Impact of strained-channel n-MOSFETs with a SiGe virtual substrate on dielectric interface quality evaluated by low frequency noise measurements

G. Neau , F. Martinez , M. Valenza , J.C. Vildeuil , E. Vincent et al.

Microelectronics Reliability, 2007, 47 (4-5), pp.567-572. ⟨10.1016/j.microrel.2007.01.079⟩

Article dans une revue istex hal-00327424v1

Oxide trap characterization of 45 nm MOS transistors by gate current R.T.S. noise measurements

F. Martinez , C. Leyris , G. Neau , M. Valenza , A. Hoffmann et al.

Microelectronic Engineering, 2005, vol 80, pp 54-57. ⟨10.1016/j.mee.2005.04.043⟩

Article dans une revue istex hal-00327712v1

Overview of the impact of downscaling technology on 1/f noise in p-MOSFETs to 90 nm : Noise in Devices and Circuits

M. Valenza , A. Hoffmann , D. Sodini , A. Laigle , F. Martinez et al.

IEE Proceedings Circuits Devices and Systems, 2004, 51 (2), pp.102-110. ⟨10.1049/ip-cds:20040459⟩

Article dans une revue hal-00329861v1

Multiple-junction photovoltaic cell based on antimonide materials

Yvan Cuminal , E. Giudicelli , Frédéric Martinez

United States, Patent n° : US Patent App. 15/312,570, 2017. 2017

Brevet hal-02052932v1

Floating-Body SOI Memory: The Scaling Tournament

M. Bawedin , S. Cristoloveanu , A. Hubert , K. Park , Frédéric Martinez

Semiconductor-On-Insulator Materials for Nanoelectronics Applications, pp.393-421, 2011, ⟨10.1007/978-3-642-15868-1_21⟩

Chapitre d'ouvrage istex hal-02066793v1

Modélisation et caractérisation de structures MOS à diélectrique ultra-fin : application au bruit Basse Fréquence lié au courant de grille

Frédéric Martinez

Electronique. Université de Montpellier 2, 2005. Français. ⟨NNT : ⟩

Thèse tel-02068167v1

Chargement...

Frédéric Martinez

Publications

Publications

Design strategies for very low bandgap InAs/InAsSb thermophotovoltaic cells

Investigations on a very low bandgap InAs/InAsSb thermophotovoltaic cell: TCAD simulations, band engineering and clean room processing

Fabrication, characterization and modeling of III-Sb based multijunction solar cells

InAs/InAsSb superlattice and barrier structure: from photodetectors to thermophotovoltaics cells

Analysis of the performances of a conventional GaAs solar cell operating at up to 200 °C

Caractérisation et modélisation d’une cellule tandem AlGaAsSb/GaSb

Physics of GaAs solar cells operating under thermal stress

Transforming a type-II InAs/InAsSb superlattice MWIR photodetector into a thermophotovoltaic cell

Low bandgap (near-field) TPV: materials and structures

Modélisation de cellules solaires multijonctions III-Sb réalistes

InAs/InAsSb superlattice thermophotovoltaic cell: how to adapt an infrared photodetector for TPV conversion

InAs/InAsSb superlattice thermophotovoltaic cells

Harvesting mid-wave infrared radiation with type-II InAs/InAsSb superlattices: from photodetectors to thermophotovoltaics cells

Very-low bandgap thermophotovoltaic cell based on type-II InAs/InAsSb superlattice MWIR photodetector

Insight into the factors affecting the performances of a conventional GaAs solar cell operating at up to 200 °C

Potential of AlGaAsSb alloys for GaSb-based multi-junction solar cells

Characterization and numerical analysis of III-Sb tandem solar cells

Characterization and pseudo-3D modeling of GaSb solar cells for high-concentration photovoltaics

Investigation of GaSb solar cell with an AlGaAsSb window layer for applications as a bottom subcell of 4-junction solar cells

Investigation of antimonide-based semiconductors for high-efficiency multi-junction solar cells

Capacitance voltage profiling to determine doping in InAs/GaSb LWIR SL photodetector structures

Contacts ohmiques pour cellules solaires à base de matériaux antimoniures dans le cadre d'applications aux fortes concentrations solaires

Interest of Antimonide Compounds Based Multijunction Cells for High Concentrating Photovoltaics

Impact de la résistance série sous forte concentration solaire dans le cas de cellules antimoniures

Multi-junctions PV concentrator solar cells, state of the art. Interest of antimonide compounds

Thickness characterization by capacitance derivative in FDSOI p-i-n gated diodes

Noise measurements in electronic devices

Structures à base de matériaux antimoniures pour la conversion de l’énergie solaire concentrée

Numerical simulation of non-homogeneous 2D-CNT structures

Percolation in 2D Carbon Nanotube Thin Films

Caractérisation de contacts et de matériaux par la mesure du bruit Basse Fréquence

A simple analytical and explicit compact model for the drain current of UTB SOI MOSFETs

A surface potential based compact model for lightly doped FD SOI MOSFETs with ultra-thin body

Comparison of the effects of different surfactants on electrical parameters in Carbon Nanotube thin films

Numerical Model of Transport in Microcrystalline Silicon Films

Analytical modelling of Multiple-gate MOSFETs

Low frequency noise modeling of SOI MOSFETs using Green's function approach

1T-DRAM at the 22nm technology node and beyond: An alternative to DRAM with high-k storage capacitor

Evaluation of Interface Trap Density in Advanced SOI MOSFETs

1/f noise in strained SiGe on Insulator MOSFETs

DC and low frequency noise characterization of Multi gate N-MOSFET in a bulk technology by integrating polysilicon filled trenches

Impact of Process Options on Low Frequency Noise in Germanium on- Insulator (GeOI) high-K & Metal Gate pMOSFETs

Parasitic back-inferface conduction in planar and triple-gate SOI transistors

Low Frequency Noise Sources in Ge Resistances elaborated on GeOI Wafers

Interface oxide trap characterisation in germanium-on-insulator 0.12 &#x03BC;m PMOS transistors by drain current noise measurements

Simulation of transport and 1/f noise in carbon nanotube films

1∕f noise, transport and percolation in carbon nanotube film field-effect transistors: simulation and experiments

Numerical modeling of low frequency noise in ultrathin oxide MOSFETs

1∕f noise in 0.12 μm P-MOSFETs with High-k and metal gate fabricated in a Si Process Line on 200 mm GeOI Wafers

Extraction of slow oxide trap profiles by low-frequency noise analysis: Application to hot-electron-induced degradation

Low Frequency Noise of Ultrathin Oxide MOSFETs using Green’s Function Approach

Low frequency gate noise modeling of ultrathin oxide MOSFETs

Physical Low Frequency Noise Sources Associated to Drain and Gate Currents of Ultrathin Gate oxide on n-MOSFETs

Impact of Random Telegraph Signal in CMOS Image Sensors for Low-Light Levels

1/f gate tunneling current noise model of ultrathin oxide MOSFETs

Response of Correlated Double Sampling CMOS Imager Circuit to Random Telegraph Signal Noise

Contributions of Channel Gate and Overlap Gate Currents on 1/f Gate Current Noise for Thin Oxide Gate p-MOSFETs

Gate and drain low frequency noise in HfO2 NMOSFETs

Effect of Oxide Thickness and Nitridation Process on PMOS Gate and Drain Low Frequency Noise

Correlated carrier number-mobility fluctuation model or access resistance noise in p-MOSFETs

Impact of gate current noise on drain current noise in 90 nm CMOS technology

Impact of process scaling on BSIM noise parameters

Discussion on standard 1/f noise models in software packages: SPICE, HSPICE and BSIM3v3--comparison to MOSFET noise data on commercial c025

Characterization and Simulation of AlGaAsSb/GaSb Tandem Solar Cell

Investigation of AlInAsSb/GaSb tandem cells – A first step towards GaSb-based multi-junction solar cells

Modeling and Characterization of an MBE-Grown Concentrator P-N GaSb Solar Cells Using a Pseudo-3D Model

Improved efficiency of GaSb solar cells using an Al0.50Ga0.50As0.04Sb0.96 window layer

GaSb-based solar cells for multi-junction integration on Si substrates

Characterization and modeling of electrical transport in undoped hydrogenated microcrystalline silicon

Supercoupling effect in short-channel ultrathin fully depleted silicon-on-insulator transistors

Electrical modeling of InSb PiN photodiode for avalanche operation

Modeling of low frequency noise in FD SOI MOSFETs

Measurements and Simulations of Surfactant's Impact on the Conductivity and the <formula formulatype="inline"><tex Notation="TeX">$\hbox{1}/f$</tex></formula> Noise in Percolation Carbon Nanotube Networks

Improved 1/f noise characterization of strained SiGe on insulator MOSFETs fabricated on wafers obtained by the Ge enrichment technique

A physical compact DC drain current model for long-channel undoped ultra-thin body (UTB) SOI and asymmetric double-gate (DG) MOSFETs with independent gate operation

Modeling of the Boron Emitter Formation Process from BCl<sub>3</sub> Diffusion for N-Type Silicon Solar Cells Processing

A comparative 1/f noise study of GeOI wafers obtained by the Ge enrichment technique and the Smart Cut technology

Interface oxide trap characterisation in germanium-on-insulator 0.12 μm PMOS transistors by drain current noise measurements