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Frédéric Richardeau
CNRS Research Director
Lab. LAPLACE
University of Toulouse, CNRS, INPT, UPS
Toulouse, France
47%
Open access
196
Documents
Current affiliations
- 405657
Researcher identifiers
frederic-richardeau-
0000-0002-6964-8054
- Google Scholar : https://scholar.google.com/citations?hl=fr&user=3Vvd0SYAAAAJ
- IdRef : 059705744
Presentation
Frédéric Richardeau is a Research Director at the CNRS and has been a lecturer in power electronics for some twenty years at the LEEI-ENSEEIHT and then at Lab. LAPLACE - Toulouse - France. He was the leader of the CNRS GDR ME²-MS (Electrical Energy Management - from Materials to Systems) from 2001 to 2005. Founder and leader of the FIDIAG transverse action within LAPLACE from 2006 to 2013 and leader of the Power Electronics team from 2009 to 2015. Member of the CoNRS from 2016 to 2018, ANR and HCERES. His work focuses on the characterization, modeling and design of more robust active semiconductor Si and WBG components with controlled failure modes in connection with their gate-driver as an advanced monitoring, diagnostic and conditioning device, up to the search for secure, reconfigurable and fault-tolerant power electronics conversion structures for critical applications.
https://orcid.org/0000-0002-6964-8054
https://scholar.google.com/citations?hl=fr&user=3Vvd0SYAAAAJ&view_op=list_works&sortby=pubdate
https://www.researchgate.net/profile/Frederic-Richardeau
https://ieeexplore.ieee.org/author/38349724400?searchWithin=%22Author%20Ids%22:38349724400&history=no&highlight=true&returnFacets=ALL&returnType=SEARCH&sortType=newest
https://fr.linkedin.com/in/fr%C3%A9d%C3%A9ric-richardeau-8689b710a
Frédéric Richardeau est Directeur de Recherche au CNRS, chargé de cours spécialisé en électronique de puissance depuis plus de 25 ans au LEEI-ENSEEIHT puis au LAPLACE au sein de Toulouse - INP sur le site de l'ENSEEIHT. Animateur scientifique du pôle GDR ME²-MS (Maîtrise de l'Énergie Électrique – des Matériaux aux Systèmes) de 2001 à 2005, fondateur et animateur de l'action transversale intergroupe FIDIAG au sein du LAPLACE de 2006 à 2013 et responsable de l'équipe de recherche sur les Convertisseurs Statiques de 2009 à 2015 (30 personnes, enseignants, chercheurs et doctorants). Membre du CoNRS de 2016 à 2018, de l'ANR CES 05, de l'HCERES et ponctuellement du CNU 63ème section. Ses travaux portent sur la caractérisation, la modélisation et la conception de nouveaux composants actifs semi-conducteurs Silicium et WBG plus robustes et aux modes de défaillances maîtrisés en lien avec leur électronique de commande intégrée comme organe évolué de surveillance, de diagnostic et de conditionnement jusqu'à la recherche de structures de conversion électroniques de puissance sécurisées, reconfigurables et à tolérance de panne pour applications critiques.
https://orcid.org/0000-0002-6964-8054
https://scholar.google.com/citations?hl=fr&user=3Vvd0SYAAAAJ&view_op=list_works&sortby=pubdate
https://www.researchgate.net/profile/Frederic-Richardeau
https://ieeexplore.ieee.org/author/38349724400?searchWithin=%22Author%20Ids%22:38349724400&history=no&highlight=true&returnFacets=ALL&returnType=SEARCH&sortType=newest
https://fr.linkedin.com/in/fr%C3%A9d%C3%A9ric-richardeau-8689b710a
Research domains
Electric power
Skills
Electronique de Puissance
Composants actifs semi-conducteurs
Modélisation
Intégration et technologies
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On-Line Digital Fine Monitoring of SiC MOSFET Gate-Oxide Health: A Dual-Channel Gate Driving Approach2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Jun 2024, Bremen, Germany. pp.84-87, ⟨10.1109/ISPSD59661.2024.10579698⟩
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Système de gestion optimale du temps-mort intégré au gate-driver CMOS grâce à la mesure du courant de grille pour les MOSFETs SiCCongrès de l'école doctorale GEETS, Ecole Doctorale GEETS, Jun 2024, TOULOUSE (FRANCE), France
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Analysis of Failure Mechanisms Occuring at Breakdown Voltage in power p-GaN HEMT31st edition of the IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2024), Jul 2024, Singapore (SG), Singapore
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CMOS Gate Driver with Integrated Gate Current Monitoring Method for Fault Under Load Short Circuit Detection of SiC Power Modules2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Jun 2024, Bremen, Germany. pp.454-457, ⟨10.1109/ISPSD59661.2024.10579581⟩
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A Full Transient ElectroThermal - Elastoplastic Mechanical and Metallurgical 2D FEM of SiC MOSFET for Gate-Region Stress Investigation under Short-Pulse Short-Circuit (Invited)2024 IEEE International Reliability Physics Symposium (IRPS), Apr 2024, Grapevine - Dallas, United States. pp.7B.2-1-7B.2-8, ⟨10.1109/IRPS48228.2024.10529493⟩
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Backside Fault Localization and Defect Physical Analysis of Degraded Power HEMT p-GaN Transistors Stressed in DC and AC Switching Modes49th International Symposium for Testing and Failure Analysis ISTFA 2023), Nov 2023, Phoenix, United States. pp.491-499, ⟨10.31399/asm.cp.istfa2023p0491⟩
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Méthode de préconditionnement du HEMT GaN pour une mesure reproductible de VthSYMPOSIUM DE GENIE ELECTRIQUE (SGE 2023), Jul 2023, Lille, France. https://sge2023.sciencesconf.org/resource/page/id/35
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Transient Thermal 2D FEM Analysis of SiC Mosfet in Short-Circuit Operation Including Solidus-Liquidus Phase Transition of the Aluminum Source Electrode24th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE 2023) - IEEE Electronics Packaging Society, Apr 2023, Graz, Austria. ⟨10.1109/EuroSimE56861.2023.10100775⟩
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CMOS Gate Driver with Integrated Ultra-Accurate and Fast Gate Charge Sensor for Robust and Ultra-Fast Short Circuit Detection of SiC power modules2023 IEEE 35th International Symposium on Power Semiconductor Devices and ICs (IEEE ISPSD), Hong Kong University of Science and Technology (HKUST), May 2023, Hong Kong, France. pp.68-71, ⟨10.1109/ispsd57135.2023.10147567⟩
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Développement de fonctionnalités rapides, précises et intégrées CMOS, pour la commutation optimale et la protection interne des onduleurs à module SiC MOSFETSYMPOSIUM DE GENIE ELECTRIQUE (SGE 2023), Jul 2023, Lille, France
Conference papers
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CMOS gate driver for SiC power modulesCongrès annuel de l'Ecole Doctorale Génie Electrique, Electronique, Télécommunications et Santé : du Système au Nanosystème - ED 323 (GEET) - Université de Toulouse, Ecole Doctorale GEET, Jun 2023, Toulouse, France. https://adum.fr/as/ed/GEET/article.pl
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SiC Power MOSFET Overload Detection, Short-Circuit Protection and Gate-Oxide Integrity Monitoring Using a Switched Resistors Dual-Channel Gate-Driver [ESREF'23]34th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2023), Oct 2023, Toulouse, France. ⟨10.1016/j.microrel.2023.115082⟩
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Full-SiC Single-Chip High-Side and Low-Side Dual-MOSFET for Ultimate Power Vertical Integration -Basic Concept and Technology25th Conference on Power Electronics and Applications (and Exhibition), EPE ’23 (IEEE) ECCE Europe (Energy Conversion Congress and Expo Europe), Sep 2023, Aalborg, Denmark. ⟨10.23919/EPE23ECCEEurope58414.2023.10264325⟩
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p-GaN HEMT Hard Switching Fault Type Short-Circuit Detection Based on the Gate Schottky-Barrier Leakage Current and Using a Dual-Channel Segmented CMOS buffer Gate-Driver35th IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD 2023), Hong Kong University of Science and Technology, May 2023, Hong Kong, China. ⟨10.1109/ISPSD57135.2023.10147669⟩
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Full-SiC Single-Chip Buck and Boost MOSFET-JBS Converters for Ultimate Efficient Power Vertical IntegrationIEEE 30th International Conference Mixed Design of Integrated Circuits and Systems, Institute of Computer Science of AGH University of Science and Technology, Jun 2023, Kraków, Poland. https://www.mixdes.org/Mixdes3/, ⟨10.23919/MIXDES58562.2023.10203213⟩
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Static and Dynamic Characterization of a 1.2 kV SiC MOSFET in Third Quadrant2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe), Sep 2023, Aalborg, Denmark. pp.1-8, ⟨10.23919/epe23ecceeurope58414.2023.10264635⟩
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Thermo-Mechanical and Metallurgical Preliminary Analysis of SiC MOSFET Gate-Damage Mode under Short-Circuit based on a Complete Transient Multiphysics 2D FEM [Best Paper Award]34th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, ESREF'23, Université Toulouse 3 Paul Sabatier, Université de Bordeaux, IMS, LAAS-CNRS, CNES, Oct 2023, Toulouse, France. ⟨10.1016/j.microrel.2023.115081⟩
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Over-Voltage and Cross-Conduction Hard Switching Stress on Schottky Gate-Type p-GaN HEMT in Half-Bridge Operation Experimental and Physical Approaches [ESREF'23]34th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Oct 2023, Toulouse, France. ⟨10.1016/j.microrel.2023.115172⟩
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Concept and technology for full monolithic MOSFET and JBS vertical integration in multi-terminal 4H-SiC power converters20th International Conference on Silicon Carbide and Related Materials (ICSCRM) - ICSCRM 2023, Naples University - Federico II, Sep 2023, Sorrento, Italy
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On the Electro-Thermal 2D FEM Parametric Analysis of SiC Vertical Mosfet including Gate-Oxide Charge-Trapping Thermal Dependency. Application for Fast Transient Extreme Short-Circuit OperationIEEE 30th International Conference Mixed Design of Integrated Circuits and Systems, Institute of Computer Science of AGH University of Science and Technology, Jun 2023, Kraków, Poland. https://www.mixdes.org/Mixdes3/, ⟨10.23919/MIXDES58562.2023.10203258⟩
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Predictive gate ageing-laws of SiC MOSFET under repetitive short-circuit stress33rd European Symposium on Reliability of Electron Devices Failure Physics and Analysis, Sep 2022, Berlin, Germany
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Modélisation électrothermique compacte des modes de défaillance du Mosfet SiC en régime extrême de court-circuit. Application au développement d'une protection intégrée pour convertisseur sécurisé à tolérance de panne4ème Symposium de Génie Électrique (SGE 2021), Jul 2021, Nantes, France
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Robustness study of a fast protection method based on the gate-charge dedicated for SiC MOSFETs power device32th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 2021, Oct 2021, Bordeaux, France
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Contrôle ultra-rapide et intégré de dv/dt en boucle fermée lors de l’amorçage de transistors à semiconducteurs grand-gapSymposium de Génie Electrique 2021, Jul 2021, Nantes, France
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Effect of gate-source bias voltage and gate-drain leakage current on the short-circuit performance of FTO-type SiC power MOSFETs2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), May 2021, Nagoya, Japan. pp.255-258, ⟨10.23919/ISPSD50666.2021.9452253⟩
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Fast cut-off, low I 2 T and high temperature monolithic on-chip fuse on silicon substrate for new fail-safe embedded power switch32th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 2021, Oct 2021, Bordeaux, France
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New monolithic multi-terminal Si-chips integrating a power converter phase-leg for specific applications28th International Conference Mixed Design of Integrated Circuits and Systems (on-line) June 24-26, 2021, Lodz, POLAND, Jun 2021, Lodz (online), Poland. ⟨10.23919/MIXDES52406.2021.9497636⟩
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Protection rapide et robuste contre les courts-circuits internes de convertisseurs à base de MOSFETs SiCSYMPOSIUM DE GENIE ELECTRIQUE (SGE 2021), 6 - 8 JUILLET 2021, NANTES, FRANCE, Jul 2021, Nantes, France
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Towards a safe failure mode under short-circuit operation of power SiC MOSFET using optimal gate source voltage depolarization32th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 2021, Oct 2021, Bordeaux, France
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hal-03371959v1
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CMOS Gate Driver with fast short circuit protection for SiC MOSFETs2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Sep 2020, Vienna (virtual), Austria. pp.94-97, ⟨10.1109/ISPSD46842.2020.9170164⟩
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Modular Multilevel SOI-CMOS Active Gate Driver Architecture for SiC MOSFETs2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Sep 2020, Vienna (virtual ), Austria. pp.278-281, ⟨10.1109/ISPSD46842.2020.9170181⟩
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‘ig,vgs’ Monitoring for Fast and Robust SiC MOSFET Short-Circuit Protection with High integration Capability2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe), Sep 2020, Lyon (Virtual ), France. pp.P.1-P.10, ⟨10.23919/EPE20ECCEEurope43536.2020.9215619⟩
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Modeling and Design of High Bandwidth Feedback Loop for dv/dt Control in CMOS AGD for GaN2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Sep 2020, Vienna ( virtual ), Austria. pp.106-109, ⟨10.1109/ISPSD46842.2020.9170106⟩
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hal-02920181v1
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Fail-safe switching-cells architectures based on monolithic on-chip fuse22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe), Sep 2020, Lyon, France. pp.P.1-P.10, ⟨10.23919/EPE20ECCEEurope43536.2020.9215608⟩
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hal-02980784v1
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SiC MOSFETs soft and hard failure modes: functional analysis and structural characterization2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Sep 2020, Vienna ( virtual ), Austria. pp.170-173, ⟨10.1109/ISPSD46842.2020.9170094⟩
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Gate-damage accumulation and off-line recovery in SiC power MOSFETs with soft short-circuit failure mode31st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Oct 2020, Athènes, Greece. pp.113943, ⟨10.1016/j.microrel.2020.113943⟩
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Sub-nanosecond delay CMOS Active Gate Driver for Closed-Loop dv/dt Control of GaN Transistors31st IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), May 2019, Shanghai, China. ⟨10.1109/ispsd.2019.8757693⟩
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3D-FE electro-thermo-magnetic modeling of automotive power electronic modules -Wire- bonding and Copper clip technologies comparisonInternational Workshop on Integrated Power Packaging, Apr 2019, TOULOUSE, France
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Aging and failure mechanisms of SiC Power MOSFETs under repetitive short- circuit pulses of different durationInternational Conference on Silicon Carbide and Related Materials 2019, Sep 2019, Kyoto, Japan
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Short-circuit robustness of parallel SiC MOSFETs and fail-safe mode strategyEuropean Power Elecrtonics and Applications 2019 - IEEE ECCE Europe, Sep 2019, Gênes, Italy
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Circuit-Type modelling of SiC power Mosfet in short-circuit operation including selective fail-to-open and fail-to-short modes competition30th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Sep 2019, Toulouse, France. ⟨10.1016/j.microrel.2019.113501⟩
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Comparison between ig Integration and vgs Derivation methods dedicated to fast Short-Circuit 2D-Diagnosis for Wide Band Gap Power DevicesELECTRIMACS 2019, May 2019, Salerno, Italy
Conference papers
hal-02180892v1
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Reliablity issues in 4H-SiC MOSFETskeynote presentation, First International Workshop on Wide Band Gap Innovative SiC for Advanced Power, Tours, France, on March 7, 2019. University of Tours and Italian Inter-University Consortium for Nanoelectronics (IUNET), European Project WinSiC4AP, www.winsic4ap-project.org, Mar 2019, Tours, France
Conference papers
hal-02342945v1
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Etude de la robustesse et exploitation des défaillances de MOSFETs SiC 1200V en régime extrême de court-circuitEcole thématique Fiab-Surf, 2019, labellisée par le CNRS-INSIS. De la physique d'endommagement à la sûreté de fonctionnement des convertisseurs statiques, 17-21 juin 2019, Saint-Pierre d'Oléron, Jun 2019, Saint-Pierre d'Oléron, France
Conference papers
hal-02342941v1
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Complementary multi-terminal power chips integrating ultimate wire-bond-less switching cells for compact Si-power convertersEPE’19-ECCE Europe, Sept. 2-6, 2019, Geneva (ITALIA), 2019, Geneva, Italy
Conference papers
hal-03937618v1
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Monolithic asymmetric switching cells integrated on vertical multi-terminal Si power chipsEPE Conference and Applications, Sep 2019, Gênes, Italy. 8p
Conference papers
hal-02337047v1
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100% Back-up Inverter-Leg with an Original and Automatic Safe-ConnectionECPE Workshop "Availability of Power Electronics by Fault-Tolerant Designs in Automotive and Aircraft", 3 - 4 July 2019, Filderhalle Leinfelden-Echterdingen, Stuttgart, Germany, Jul 2018, Munich, Germany
Conference papers
hal-02342949v1
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A CMOS gate driver with ultra-fast dV/dt embedded control dedicated to optimum EMI and turn-on losses management for GaN power transistors2018 14th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), Jul 2018, Prague, France. pp.105-108, ⟨10.1109/PRIME.2018.8430331⟩
Conference papers
hal-02335492v1
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Etude des propriétés uniques des MOSFET en Carbure de Silicium (SiC) en régime de court-circuit"Analyse et mécanismes de défaillance des composants pour l'électronique", ATELIER ANADEF 2018, Jun 2018, Hossegor, France
Conference papers
hal-02342934v1
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Étude des propriétés uniques des MOSFET SiC en régime de court-circuit (CC) en vue de la sécurisation de cellule de commutationÉcole thématique 2018 GRANDS-GAPS, Matériaux Grands Gaps pour l'Électronique de Puissance : Enjeux, Intégration système et commande rapprochée, 18-22 juin 2018, Toulouse (FRANCE), 2018, Toulouse, France
Conference papers
hal-04157350v1
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Realization of a Monolithic Multi-Terminal Si-Power Chip Integrating a 2-Phase Rectifier Composed of Vertical PIN Diodes Insulated by Vertical P+Walls20th European Conference on Power Electronics and Applications (EPE'18 ECCE Europe), Sep 2018, Riga, Latvia
Conference papers
hal-02180828v1
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Gate leakage-current, damaged gate and open-circuit failure-mode of recent SiC Power Mosfet : Overview and analysis of unique properties for converter protection and possible future safety management2018 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles & International Transportation Electrification Conference (ESARS-ITEC), Nov 2018, Nottingham, France. pp.1-6, ⟨10.1109/ESARS-ITEC.2018.8607551⟩
Conference papers
hal-02180839v1
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Etude des propriétés uniques des MOSFET SiC en régime de court-circuit (CC) en vue de la sécurisation de cellule de commutationEcole thématique Grands-Gaps, 2018, labellisée par le CNRS. Topic Matériaux Grands Gaps pour l'Electronique de Puissance : Enjeux, Intégration système et commande rapprochée, Jun 2018, Cahors, France
Conference papers
hal-02342936v1
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Monolithic Complementary Multi-terminal RC-IGBT Chips for Compact Multi-phase Power Converter25th International Conference "Mixed Design of Integrated Circuits and System" (MIXDES 2018), Jun 2018, Gdynia, Poland. 5p., ⟨10.23919/MIXDES.2018.8436866⟩
Conference papers
hal-01930709v1
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First practical evaluation of a complete fail-safe and 100% fault-tolerant inverter for critical load in aerospace application8th International Conference on Recent Advances in Aerospace Actuation Systems and Components (R3ASC'18), 30 mai-1 juin 2018, Toulouse (FRANCE), 2018, Toulouse, France
Conference papers
hal-03937652v1
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Switching Cells and Power Devices - An IntroductionECPE Tutorials, "Power Circuits for Clean Switching and Low Losses", 17 – 18 October 2018, INSA de Lyon, Campus LyonTech, La Doua Villeurbanne/Lyon, France, Oct 2018, Lyon, France
Conference papers
hal-02342948v1
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Ensure an original and safe “fail-to-open” mode in planar and trench power SiC MOSFET devices in extreme short-circuit operation29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis ( ESREF 2018 ), Oct 2018, Aalborg, Denmark. pp.598-603, ⟨10.1016/j.microrel.2018.07.026⟩
Conference papers
hal-02180574v1
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Towards innovative hybrid and ultra-compact switching-cellsPower Circuits for Clean Switching and Low Losses, Oct. 17-18, 2018, Lyon (FRANCE), 2018, Lyon, France
Conference papers
hal-04157349v1
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Robustesse et modélisation électrothermique en régime extrême du Mosfet SiCSéminaire ISP3D (pôle intégration de puissance) GDR SEEDS, 15-16 mars 2017, Toulouse (FRANCE), 2017, Toulouse, France
Conference papers
hal-04157347v1
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Global electro-thermal modelling and circuit-type simulation of SiC Mosfet power devices in short-circuit operation for critical system analysisELECTRIMACS 2017, Jul 2017, Toulouse, France
Conference papers
hal-02336868v1
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Robust magnetic control of inter-cell-transformers including reduced numbers of phases operation for interleaved and paralleled convertersElectrimacs 2017, Jul 2017, Toulouse, France
Conference papers
hal-02336906v1
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Gate leakage-current analysis and modelling of planar and trench power SiC Mosfet devices in extreme short-circuit operation28th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2017), Sept. 25-28, 2017, Bordeaux (FRANCE), 2017, Bordeaux, France
Conference papers
hal-03937650v1
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Investigation on damaged planar-oxide of 1200V SiC Power Mosfets in non-destructive short-circuit operation28th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2017), Sept. 25-28, 2017, Bordeaux (FRANCE), 2017, Bordeaux, France
Conference papers
hal-03937651v1
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Puces multipôles compactes à RC-IGBT pour l'intégration fractionnée et optimale de cellules de commutation. Evaluation des performances électriques sur PCB.Symposium de Genie Electrique, Jun 2016, Grenoble, France
Conference papers
hal-01361635v1
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Mixed monolithic-hybrid integration of multiphase power converter: preliminary evaluation of the 3-chip integration conceptESARS ITEC 2016 - 4th International Conference on Electrical Systems for Aircraft, Railway, Ship propulsion and Road Vehicles & International Transportation Electrification Conference, Nov 2016, Toulouse, France
Conference papers
hal-01407911v1
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Realisation and characterisation of compact generic IGBT-based multiphase power converters using the two-chip multi-pole integration approach4th Micro/Nano-Electronics Packaging and Assembly, Design and Manufacturing Forum (MiNaPAD Forum 2015), April 21-23 2015, Grenoble (FRANCE), Apr 2015, Grenoble, France
Conference papers
hal-01234269v1
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Behavioral model of gallium nitride normally ON power HEMT dedicated to inverter simulation and test of driving strategies2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe), Sep 2015, Geneva, Switzerland. pp.1-11, ⟨10.1109/EPE.2015.7309208⟩
Conference papers
hal-02920266v1
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Analysis of the three-chip switching cells approach for integrated multi-phase power converter combining monolithic and hybrid techniques: Experimental validation on SiC and Si power assembly prototypesPower Electronics and Applications (EPE'15 ECCE-Europe), 2015 17th European Conference on., Sep 2015, Genève, Switzerland. ⟨10.1109/EPE.2015.7311711⟩
Conference papers
hal-01230267v1
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RC-IGBT-thyristor structure having trenches filled with dielectric on the backside: Physical analysis and application to the integration of a multiphase generic power converter using the "two-chip" approachPower Electronics and Applications (EPE'15 ECCE-Europe), 2015 17th European Conference on, Sep 2015, Geneva, Switzerland. ⟨10.1109/EPE.2015.7311704⟩
Conference papers
hal-01235956v1
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Monolithic Multi-poles Converter Device for Medium Power ApplicationsEuropean Power Electronics Conference and Application, EPE-ECCE, Aug 2014, Lappeenranta, Finland. pp.1-7, ⟨10.1109/EPE.2014.6911021⟩
Conference papers
hal-03937646v1
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On-line Tj monitoring sensor embedded on VSI driver board - Application on a 5kW high speed PMSM for aeronautic "blowing-fan"PCIM’14 – International Conference on Power Conversion and Intelligent Motion, 20-22 May 2014, Nuremberg (GERMANY), 2014, Nuremberg, Germany. pp.1-8
Conference papers
hal-03937621v1
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Comparison and design of InterCell transformer structures in fault-operation for parallel multicell convertersEnergy Conversion Congress and Exposition (ECCE), Pittsburgh, PA, (USA), 2014, Pittsburgh, United States. pp.3089-96, ⟨10.1109/ECCE.2014.6953820⟩
Conference papers
hal-03902992v1
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A generic snapback free Reverse Conducting IGBT structure suitable for monolithic switching cells integrationEuropean Power Electronics Conference and Application, EPE-ECCE, 26 -28 août 2014, Lappeenranta (FINLAND), 2014, Lappeenranta, Finland
Conference papers
hal-03937647v1
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Fault tolerant control for hybrid 4 leg npc-flying capacitors topologyElectrimacs 2014 : 11th International Conference on Modeling and Simulation of Electric Machines, Converters and Systems, 19-22 May 2014, Valence (SPAIN), 2014, Valence, Spain
Conference papers
hal-03937622v1
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Design and fault-operation analysis of a modular, cyclic-cascade intercell transformer (ICT) for a parallel, X-phase converterElectrimacs 2014 : 11th International Conference on Modeling and Simulation of Electric Machines, Converters and Systems, 19-22 May 2014, Valence (SPAIN), 2014, Valence, Spain
Conference papers
hal-03937623v1
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Sécurité électrique et reconfiguration sur défaillance interne - Des structures de base aux architectures complexesSéminaire organisé dans le cadre du CMCU LSE-ENIT / LAPLACE ENIT Tunis, TUNISIA, 2014, Tunis, Tunisie
Conference papers
hal-03987876v1
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Simulation d'une structure générique RC-IGBT sans "tension de retournement" adaptée à l'intégration monolithique de cellules de commutation sur puce SiSymposium de Génie Électrique 2014, Jul 2014, Cachan, France. 7p
Conference papers
hal-01065236v1
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A generic Reverse Conducting IGBT structure for monolithic switching cells integrationPower Electronics and Applications (EPE'14-ECCE Europe), 2014 16th European Conference on., Aug 2014, Lappeenranta, Finland. ⟨10.1109/EPE.2014.6910977⟩
Conference papers
hal-01234236v1
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Méthodologie de pré-dimensionnement d'un coupleur magnétique robuste à structure monolithique pour convertisseur parallèle entrelacéJCGE, Saint Nazaire, France, 2013, Saint Nazaire, France
Conference papers
hal-03937077v1
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A single-chip integration approach of switching cells suitable for medium power applications.MIXDES 2013 : 20th International Conference 'Mixed Design of Integrated Circuits and Systems' Gdynia, Poland, Jun 2013, Gdynia, Poland. pp.421-5
Conference papers
hal-03937619v1
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Pre-design methodology and results of a robust monolithic InterCellTransformer (ICT) for parallel multicell converterIECON 2013 : 39th Annual Conference of the IEEE Industrial Electronics Society, Vienne, AUSTRIA, 2013, Vienne, Austria
Conference papers
hal-03937078v1
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Switching Optimization of WBG Power Devices on Inverter LegPCIM Europe 2013; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, May 2013, Nürnberg, Germany
Conference papers
hal-02964301v1
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Multi-switch Si-chip structures and on-substrate packaging techniques for improving the electrical performance of power modules15th European Conference on Power Electronics and Applications, Lille, France, Sep 2013, Lille, France. ⟨10.1109/EPE.2013.6634426⟩
Conference papers
hal-03937620v1
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New design and evaluation of a fully integrated PCB dual-switch fuse – Energetic materials assisted. Application for new fail-safe and fault-tolerant convertersPCIM 2012: International Conference on Power Conversion and Intelligent Motion, Nuremberg, GERMANY, 2012, Nuremberg, Germany
Conference papers
hal-03937499v1
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Monolithically integrated switching cells suitable for high density power conversion11th International Seminar on Power Semiconductors, Prague, Czech Republic, Aug 2012, Prague, Czech Republic. pp.222-229
Conference papers
hal-03937614v1
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Conception et évaluation d’un rupteur-fusible multivoies, à assistance pyrotechnique, intégré sur PCB, pour l’isolement des défauts internes des convertisseurs d’électronique de puissance. Application à une nouvelle structure de redondanceEPF 2012: Electronique de Puissance du Futur, Bordeaux, France, 2012, Bordeaux, France
Conference papers
hal-03937616v1
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Cellules de commutation monolithiques intégrables sur siliciumEPF 2012: Electronique de Puissance du Futur, Bordeaux, France, Jul 2012, Bordeaux, France. 6p
Conference papers
hal-03937615v1
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PCB Dual-Switch Fuse with Energetic Materials Embedded. Application for New Fail-Safe and Fault-Tolerant ConvertersECPE – Workshop, "Integrated Power Boards", Rijswijk/Delft, Netherlands, 2012, Rijswijk/Delft, Netherlands
Conference papers
hal-04157346v1
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Comparison of Short-Circuit Failure Capability of Epoxy Molded Package versus Silicone Gel Module for New Fault-Tolerant Inverter and Interleaved ChopperPCIM 2011: International Conference on Power Conversion and Intelligent Motion, Nuremberg, GERMANY, 2011, Nuremberg, Germany
Conference papers
hal-03891963v1
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Diagnosis strategies and reconfiguration of a 5-level double-boost PFC with fault-tolerant capabilityISIE 2011: IEEE International Symposium on Industrial Electronics, Gdansk, POLAND, 2011, Gdansk, Poland. ⟨10.1109/ISIE.2011.5984440⟩
Conference papers
hal-03902942v1
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Comparison of Short-Circuit Failure "Ohmic Mode" of Epoxy Molded Package versus Silicone Gel Module for New Fail-Safe and Interruptible Power Converters21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Bordeaux, France, 2011, Bordeaux, France
Conference papers
hal-03891964v1
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Short fail-safe capability and fault diagnosis strategies dedicated to a reconfigurable 5-level double-boost PFCEPE 2011: 14th European Conference on Power Electronics and Applications, Birmingham, UNITED KINGDOM, 2011, Birmingham, United Kingdom
Conference papers
hal-03902945v1
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Complete short-circuit failure mode properties and comparison based on IGBT standard packaging. Application to new fault-tolerant inverter and interleaved chopper with reduced parts count.EPE 2011: 14th European Conference on Power Electronics and Applications, Birmingham, UNITED KINGDOM, 2011, Birmingham, United Kingdom
Conference papers
hal-03891962v1
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Modes de vieillissement et de défaillance de modules IGBT sous cyclage actif à haute températureCongrès national EPF2010, 2010, Saint Nazaire, France
Conference papers
hal-01913792v1
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Fault Diagnosis and PD-PWM Reconfiguration of a 5-Level Double-Boost PFC with Fault-Tolerant CapabilityIECON 2010: 36th Annual Conference of the IEEE Industrial Electronics Society, Phoenix, USA, 2010, Phoenix, United States. ⟨10.1109/IECON.2010.5675074⟩
Conference papers
hal-03902865v1
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Comparison of different inverter architectures and controls in terms of conducted EMI2010 IEEE International Conference on Industrial Technology (ICIT 2010), Mar 2010, Vina del Mar, France. ⟨10.1109/ICIT.2010.5472713⟩
Conference papers
hal-01688869v1
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5-Level Double-Boost Type PFC with Fault-Tolerant Capability |