
Frédéric Richardeau
- Convertisseurs Statiques (LAPLACE-CS)
Présentation
Frédéric Richardeau est Directeur de Recherche au CNRS, chargé de cours spécialisé en électronique de puissance depuis plus de 25 ans au LEEI-ENSEEIHT puis au LAPLACE au sein de Toulouse - INP sur le site de l'ENSEEIHT. Animateur scientifique du pôle GDR ME²-MS (Maîtrise de l'Énergie Électrique – des Matériaux aux Systèmes) de 2001 à 2005, fondateur et animateur de l'action transversale intergroupe FIDIAG au sein du LAPLACE de 2006 à 2013 et responsable de l'équipe de recherche sur les Convertisseurs Statiques de 2009 à 2015 (30 personnes, enseignants, chercheurs et doctorants). Membre du CoNRS de 2016 à 2018, de l'ANR CES 05, de l'HCERES et ponctuellement du CNU 63ème section. Ses travaux portent sur la caractérisation, la modélisation et la conception de nouveaux composants actifs semi-conducteurs Silicium et WBG plus robustes et aux modes de défaillances maîtrisés en lien avec leur électronique de commande intégrée comme organe évolué de surveillance, de diagnostic et de conditionnement jusqu'à la recherche de structures de conversion électroniques de puissance sécurisées, reconfigurables et à tolérance de panne pour applications critiques.
https://orcid.org/0000-0002-6964-8054
https://scholar.google.com/citations?hl=fr&user=3Vvd0SYAAAAJ&view_op=list_works&sortby=pubdate
https://www.researchgate.net/profile/Frederic-Richardeau
https://fr.linkedin.com/in/fr%C3%A9d%C3%A9ric-richardeau-8689b710a
Domaines de recherche
Compétences
Publications
Publications
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Low-Voltage Schottky p-GaN HEMT Properties under Extreme Repetitive Short-Circuit Operation Conditions : 2DEG Pinch-off, Stability, Aging, Robustness and Failure-Modes Analysis [Abstract]35th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - ESREF 2024, Sep 2024, Parma, Italy
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hal-04713127
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On-Line Digital Fine Monitoring of SiC MOSFET Gate-Oxide Health: A Dual-Channel Gate Driving Approach2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Jun 2024, Bremen, Germany. pp.84-87, ⟨10.1109/ISPSD59661.2024.10579698⟩
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hal-04647322
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Système de gestion optimale du temps-mort intégré au gate-driver CMOS grâce à la mesure du courant de grille pour les MOSFETs SiCCongrès de l'école doctorale GEETS, Ecole Doctorale GEETS, Jun 2024, TOULOUSE (FRANCE), France
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hal-04606906
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Analysis of Failure Mechanisms Occuring at Breakdown Voltage in power p-GaN HEMT31st edition of the IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2024), Jul 2024, Singapore (SG), Singapore
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hal-04687318
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Preliminary SiC MOSFET Gate-Cracking Modeling under Short-Circuit Based on Rankine's Damage Energetic Approach Using a Wide Temperature-Range Elastoplastic 2D Simulation [Abstract]35th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - ESREF 2024, Sep 2024, Parma, Italy
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hal-04713129
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CMOS Gate Driver with Integrated Gate Current Monitoring Method for Fault Under Load Short Circuit Detection of SiC Power Modules2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Jun 2024, Bremen, Germany. pp.454-457, ⟨10.1109/ISPSD59661.2024.10579581⟩
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hal-04647315
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A Full Transient ElectroThermal - Elastoplastic Mechanical and Metallurgical 2D FEM of SiC MOSFET for Gate-Region Stress Investigation under Short-Pulse Short-Circuit (Invited)2024 IEEE International Reliability Physics Symposium (IRPS), Apr 2024, Grapevine - Dallas, United States. pp.7B.2-1-7B.2-8, ⟨10.1109/IRPS48228.2024.10529493⟩
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hal-04579761
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On the Electro-Thermal 2D FEM Parametric Analysis of SiC Vertical Mosfet including Gate-Oxide Charge-Trapping Thermal Dependency. Application for Fast Transient Extreme Short-Circuit OperationIEEE 30th International Conference Mixed Design of Integrated Circuits and Systems, Institute of Computer Science of AGH University of Science and Technology, Jun 2023, Kraków, Poland. https://www.mixdes.org/Mixdes3/, ⟨10.23919/MIXDES58562.2023.10203258⟩
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hal-04147859
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Concept de grille quasi-flottante pour la protection d'un MOSFET SiC et la surveillance de l'intégrité de son oxyde basé sur une architecture de driver à résistances de grilles commutéesSymposium de Génie Électrique, Jul 2023, Lille, France. 6 p
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hal-04163149
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CMOS Gate Driver with Integrated Ultra-Accurate and Fast Gate Charge Sensor for Robust and Ultra-Fast Short Circuit Detection of SiC power modules2023 IEEE 35th International Symposium on Power Semiconductor Devices and ICs (IEEE ISPSD), Hong Kong University of Science and Technology (HKUST), May 2023, Hong Kong, France. pp.68-71, ⟨10.1109/ispsd57135.2023.10147567⟩
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hal-04132615
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Transient Thermal 2D FEM Analysis of SiC Mosfet in Short-Circuit Operation Including Solidus-Liquidus Phase Transition of the Aluminum Source Electrode24th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE 2023) - IEEE Electronics Packaging Society, Apr 2023, Graz, Austria. ⟨10.1109/EuroSimE56861.2023.10100775⟩
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hal-04074503
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Backside Fault Localization and Defect Physical Analysis of Degraded Power HEMT p-GaN Transistors Stressed in DC and AC Switching Modes49th International Symposium for Testing and Failure Analysis ISTFA 2023), Nov 2023, Phoenix, United States. pp.491-499, ⟨10.31399/asm.cp.istfa2023p0491⟩
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hal-04307540
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Méthode de préconditionnement du HEMT GaN pour une mesure reproductible de VthSYMPOSIUM DE GENIE ELECTRIQUE (SGE 2023), Jul 2023, Lille, France. https://sge2023.sciencesconf.org/resource/page/id/35
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hal-04157673
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Développement de fonctionnalités rapides, précises et intégrées CMOS, pour la commutation optimale et la protection interne des onduleurs à module SiC MOSFETSYMPOSIUM DE GENIE ELECTRIQUE (SGE 2023), Jul 2023, Lille, France
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hal-04157854
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Static and Dynamic Characterization of a 1.2 kV SiC MOSFET in Third Quadrant2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe), Sep 2023, Aalborg, Denmark. pp.1-8, ⟨10.23919/epe23ecceeurope58414.2023.10264635⟩
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hal-04254245
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p-GaN HEMT Hard Switching Fault Type Short-Circuit Detection Based on the Gate Schottky-Barrier Leakage Current and Using a Dual-Channel Segmented CMOS buffer Gate-Driver35th IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD 2023), Hong Kong University of Science and Technology, May 2023, Hong Kong, China. ⟨10.1109/ISPSD57135.2023.10147669⟩
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hal-04114246
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Full-SiC Single-Chip Buck and Boost MOSFET-JBS Converters for Ultimate Efficient Power Vertical IntegrationIEEE 30th International Conference Mixed Design of Integrated Circuits and Systems, Institute of Computer Science of AGH University of Science and Technology, Jun 2023, Kraków, Poland. https://www.mixdes.org/Mixdes3/, ⟨10.23919/MIXDES58562.2023.10203213⟩
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hal-04147862
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Full-SiC Single-Chip High-Side and Low-Side Dual-MOSFET for Ultimate Power Vertical Integration -Basic Concept and Technology25th Conference on Power Electronics and Applications (and Exhibition), EPE ’23 (IEEE) ECCE Europe (Energy Conversion Congress and Expo Europe), Sep 2023, Aalborg, Denmark. ⟨10.23919/EPE23ECCEEurope58414.2023.10264325⟩
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hal-04203163
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Thermo-Mechanical and Metallurgical Preliminary Analysis of SiC MOSFET Gate-Damage Mode under Short-Circuit based on a Complete Transient Multiphysics 2D FEM [Best Paper Award]34th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, ESREF'23, Université Toulouse 3 Paul Sabatier, Université de Bordeaux, IMS, LAAS-CNRS, CNES, Oct 2023, Toulouse, France. ⟨10.1016/j.microrel.2023.115081⟩
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hal-04233908
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Over-Voltage and Cross-Conduction Hard Switching Stress on Schottky Gate-Type p-GaN HEMT in Half-Bridge Operation Experimental and Physical Approaches [ESREF'23]34th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Oct 2023, Toulouse, France. ⟨10.1016/j.microrel.2023.115172⟩
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hal-04252379
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SiC Power MOSFET Overload Detection, Short-Circuit Protection and Gate-Oxide Integrity Monitoring Using a Switched Resistors Dual-Channel Gate-Driver [ESREF'23]34th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2023), Oct 2023, Toulouse, France. ⟨10.1016/j.microrel.2023.115082⟩
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hal-04252358
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CMOS gate driver for SiC power modulesCongrès annuel de l'Ecole Doctorale Génie Electrique, Electronique, Télécommunications et Santé : du Système au Nanosystème - ED 323 (GEET) - Université de Toulouse, Ecole Doctorale GEET, Jun 2023, Toulouse, France. https://adum.fr/as/ed/GEET/article.pl
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hal-04132694
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Concept and technology for full monolithic MOSFET and JBS vertical integration in multi-terminal 4H-SiC power convertersICSCRM 2023 - International Conference on Silicon Carbide and Related Materials, Sep 2023, Sorrente, Italy
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hal-04221605
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Gate-damage safe failure-mode deep analysis under short-circuit operation of 1.2kV and 1.7kV power SiC MOSFET using dedicated gate-source / drain-source voltage depolarization and damage-mode optical imagingIEEE WiPDA-Europe 2022 United Kingdom, Sep 2022, Warwick, United Kingdom. ⟨10.1109/WiPDAEurope55971.2022.9936342⟩
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hal-03781951
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Protection rapide et robuste contre les courts-circuits internes de convertisseurs à base de MOSFETs SiCSYMPOSIUM DE GENIE ELECTRIQUE (SGE 2021), 6 - 8 JUILLET 2021, NANTES, FRANCE, Jul 2021, Nantes, France
Communication dans un congrès
hal-03287704
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Towards a safe failure mode under short-circuit operation of power SiC MOSFET using optimal gate source voltage depolarization32th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 2021, Oct 2021, Bordeaux, France
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hal-03371959
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Robustness study of a fast protection method based on the gate-charge dedicated for SiC MOSFETs power device32th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 2021, Oct 2021, Bordeaux, France
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hal-03371958
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Repetitive short circuit capability of SiC MOSFET at specific low gate-source voltage bias for more robust extreme operation32th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 2021, Oct 2021, Bordeaux, France
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hal-03371962
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Modélisation électrothermique compacte des modes de défaillance du Mosfet SiC en régime extrême de court-circuit. Application au développement d'une protection intégrée pour convertisseur sécurisé à tolérance de panne4ème Symposium de Génie Électrique (SGE 2021), Jul 2021, Nantes, France
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hal-03286429
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Contrôle ultra-rapide et intégré de dv/dt en boucle fermée lors de l’amorçage de transistors à semiconducteurs grand-gapSymposium de Génie Electrique 2021, Jul 2021, Nantes, France
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hal-02966771
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Effect of gate-source bias voltage and gate-drain leakage current on the short-circuit performance of FTO-type SiC power MOSFETs2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), May 2021, Nagoya, Japan. pp.255-258, ⟨10.23919/ISPSD50666.2021.9452253⟩
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hal-03288783
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Fast cut-off, low I 2 T and high temperature monolithic on-chip fuse on silicon substrate for new fail-safe embedded power switch32th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 2021, Oct 2021, Bordeaux, France
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hal-03372248
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New monolithic multi-terminal Si-chips integrating a power converter phase-leg for specific applications28th International Conference Mixed Design of Integrated Circuits and Systems (on-line) June 24-26, 2021, Lodz, POLAND, Jun 2021, Lodz (online), Poland. ⟨10.23919/MIXDES52406.2021.9497636⟩
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hal-03286416
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CMOS Gate Driver with fast short circuit protection for SiC MOSFETs2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Sep 2020, Vienna (virtual), Austria. pp.94-97, ⟨10.1109/ISPSD46842.2020.9170164⟩
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hal-02920189
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‘ig,vgs’ Monitoring for Fast and Robust SiC MOSFET Short-Circuit Protection with High integration Capability2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe), Sep 2020, Lyon (Virtual ), France. pp.P.1-P.10, ⟨10.23919/EPE20ECCEEurope43536.2020.9215619⟩
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hal-02980827
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Modular Multilevel SOI-CMOS Active Gate Driver Architecture for SiC MOSFETs2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Sep 2020, Vienna (virtual ), Austria. pp.278-281, ⟨10.1109/ISPSD46842.2020.9170181⟩
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hal-02920129
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SiC MOSFETs soft and hard failure modes: functional analysis and structural characterization2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Sep 2020, Vienna ( virtual ), Austria. pp.170-173, ⟨10.1109/ISPSD46842.2020.9170094⟩
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hal-02994864
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Fail-safe switching-cells architectures based on monolithic on-chip fuse22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe), Sep 2020, Lyon, France. pp.P.1-P.10, ⟨10.23919/EPE20ECCEEurope43536.2020.9215608⟩
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hal-02980784
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Modeling and Design of High Bandwidth Feedback Loop for dv/dt Control in CMOS AGD for GaN2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Sep 2020, Vienna ( virtual ), Austria. pp.106-109, ⟨10.1109/ISPSD46842.2020.9170106⟩
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hal-02920181
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Gate-damage accumulation and off-line recovery in SiC power MOSFETs with soft short-circuit failure mode31st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Oct 2020, Athènes, Greece. pp.113943, ⟨10.1016/j.microrel.2020.113943⟩
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hal-02986512
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Aging and failure mechanisms of SiC Power MOSFETs under repetitive short- circuit pulses of different durationInternational Conference on Silicon Carbide and Related Materials 2019, Sep 2019, Kyoto, Japan
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hal-02334396
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3D-FE electro-thermo-magnetic modeling of automotive power electronic modules -Wire- bonding and Copper clip technologies comparisonInternational Workshop on Integrated Power Packaging, Apr 2019, TOULOUSE, France
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hal-02157327
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Short-circuit robustness of parallel SiC MOSFETs and fail-safe mode strategyEuropean Power Elecrtonics and Applications 2019 - IEEE ECCE Europe, Sep 2019, Gênes, Italy
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hal-02334405
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Sub-nanosecond delay CMOS Active Gate Driver for Closed-Loop dv/dt Control of GaN Transistors31st IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), May 2019, Shanghai, China. ⟨10.1109/ispsd.2019.8757693⟩
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hal-02157332
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Comparison between ig Integration and vgs Derivation methods dedicated to fast Short-Circuit 2D-Diagnosis for Wide Band Gap Power DevicesELECTRIMACS 2019, May 2019, Salerno, Italy
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hal-02180892
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Reliablity issues in 4H-SiC MOSFETskeynote presentation, First International Workshop on Wide Band Gap Innovative SiC for Advanced Power, Tours, France, on March 7, 2019. University of Tours and Italian Inter-University Consortium for Nanoelectronics (IUNET), European Project WinSiC4AP, www.winsic4ap-project.org, Mar 2019, Tours, France
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hal-02342945
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Circuit-Type modelling of SiC power Mosfet in short-circuit operation including selective fail-to-open and fail-to-short modes competition30th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Sep 2019, Toulouse, France. ⟨10.1016/j.microrel.2019.113501⟩
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hal-02337067
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Complementary multi-terminal power chips integrating ultimate wire-bond-less switching cells for compact Si-power convertersEPE’19-ECCE Europe, Sep 2019, Geneva, Italy
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hal-03937618
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Etude de la robustesse et exploitation des défaillances de MOSFETs SiC 1200V en régime extrême de court-circuitEcole thématique Fiab-Surf, 2019, labellisée par le CNRS-INSIS. De la physique d'endommagement à la sûreté de fonctionnement des convertisseurs statiques, 17-21 juin 2019, Saint-Pierre d'Oléron, Jun 2019, Saint-Pierre d'Oléron, France
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hal-02342941
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Monolithic asymmetric switching cells integrated on vertical multi-terminal Si power chipsEPE Conference and Applications, Sep 2019, Gênes, Italy. 8p
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hal-02337047
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Switching Cells and Power Devices - An IntroductionECPE Tutorials, "Power Circuits for Clean Switching and Low Losses", 17 – 18 October 2018, INSA de Lyon, Campus LyonTech, La Doua Villeurbanne/Lyon, France, Oct 2018, Lyon, France
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hal-02342948
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Ensure an original and safe “fail-to-open” mode in planar and trench power SiC MOSFET devices in extreme short-circuit operation29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis ( ESREF 2018 ), Oct 2018, Aalborg, Denmark. pp.598-603, ⟨10.1016/j.microrel.2018.07.026⟩
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hal-02180574
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Towards innovative hybrid and ultra-compact switching-cellsPower Circuits for Clean Switching and Low Losses, Oct. 17-18, 2018, Lyon (FRANCE), 2018, Lyon, France
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hal-04157349
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Etude des propriétés uniques des MOSFET en Carbure de Silicium (SiC) en régime de court-circuit"Analyse et mécanismes de défaillance des composants pour l'électronique", ATELIER ANADEF 2018, Jun 2018, Hossegor, France
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hal-02342934
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100% Back-up Inverter-Leg with an Original and Automatic Safe-ConnectionECPE Workshop "Availability of Power Electronics by Fault-Tolerant Designs in Automotive and Aircraft", 3 - 4 July 2019, Filderhalle Leinfelden-Echterdingen, Stuttgart, Germany, Jul 2018, Munich, Germany
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hal-02342949
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A CMOS gate driver with ultra-fast dV/dt embedded control dedicated to optimum EMI and turn-on losses management for GaN power transistors2018 14th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), Jul 2018, Prague, France. pp.105-108, ⟨10.1109/PRIME.2018.8430331⟩
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hal-02335492
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Étude des propriétés uniques des MOSFET SiC en régime de court-circuit (CC) en vue de la sécurisation de cellule de commutationÉcole thématique 2018 GRANDS-GAPS, Matériaux Grands Gaps pour l'Électronique de Puissance : Enjeux, Intégration système et commande rapprochée, 18-22 juin 2018, Toulouse (FRANCE), 2018, Toulouse, France
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hal-04157350
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Gate leakage-current, damaged gate and open-circuit failure-mode of recent SiC Power Mosfet : Overview and analysis of unique properties for converter protection and possible future safety management2018 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles & International Transportation Electrification Conference (ESARS-ITEC), Nov 2018, Nottingham, France. pp.1-6, ⟨10.1109/ESARS-ITEC.2018.8607551⟩
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hal-02180839
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Realization of a Monolithic Multi-Terminal Si-Power Chip Integrating a 2-Phase Rectifier Composed of Vertical PIN Diodes Insulated by Vertical P+Walls20th European Conference on Power Electronics and Applications (EPE'18 ECCE Europe), Sep 2018, Riga, Latvia
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hal-02180828
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Monolithic Complementary Multi-terminal RC-IGBT Chips for Compact Multi-phase Power Converter25th International Conference "Mixed Design of Integrated Circuits and System" (MIXDES 2018), Jun 2018, Gdynia, Poland. 5p., ⟨10.23919/MIXDES.2018.8436866⟩
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hal-01930709
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Etude des propriétés uniques des MOSFET SiC en régime de court-circuit (CC) en vue de la sécurisation de cellule de commutationEcole thématique Grands-Gaps, 2018, labellisée par le CNRS. Topic Matériaux Grands Gaps pour l'Electronique de Puissance : Enjeux, Intégration système et commande rapprochée, Jun 2018, Cahors, France
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hal-02342936
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First practical evaluation of a complete fail-safe and 100% fault-tolerant inverter for critical load in aerospace application8th International Conference on Recent Advances in Aerospace Actuation Systems and Components (R3ASC'18), 30 mai-1 juin 2018, Toulouse (FRANCE), 2018, Toulouse, France
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hal-03937652
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Robust magnetic control of inter-cell-transformers including reduced numbers of phases operation for interleaved and paralleled convertersElectrimacs 2017, Jul 2017, Toulouse, France
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hal-02336906
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Global electro-thermal modelling and circuit-type simulation of SiC Mosfet power devices in short-circuit operation for critical system analysisELECTRIMACS 2017, Jul 2017, Toulouse, France
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hal-02336868
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Gate leakage-current analysis and modelling of planar and trench power SiC Mosfet devices in extreme short-circuit operation28th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2017), Sept. 25-28, 2017, Bordeaux (FRANCE), 2017, Bordeaux, France
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hal-03937650
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Robustesse et modélisation électrothermique en régime extrême du Mosfet SiCSéminaire ISP3D (pôle intégration de puissance) GDR SEEDS, 15-16 mars 2017, Toulouse (FRANCE), 2017, Toulouse, France
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hal-04157347
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Investigation on damaged planar-oxide of 1200V SiC Power Mosfets in non-destructive short-circuit operation28th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2017), Sept. 25-28, 2017, Bordeaux (FRANCE), 2017, Bordeaux, France
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hal-03937651
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Puces multipôles compactes à RC-IGBT pour l'intégration fractionnée et optimale de cellules de commutation. Evaluation des performances électriques sur PCB.Symposium de Genie Electrique, Jun 2016, Grenoble, France
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hal-01361635
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Mixed monolithic-hybrid integration of multiphase power converter: preliminary evaluation of the 3-chip integration conceptESARS ITEC 2016 - 4th International Conference on Electrical Systems for Aircraft, Railway, Ship propulsion and Road Vehicles & International Transportation Electrification Conference, Nov 2016, Toulouse, France
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hal-01407911
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Behavioral model of gallium nitride normally ON power HEMT dedicated to inverter simulation and test of driving strategies2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe), Sep 2015, Geneva, Switzerland. pp.1-11, ⟨10.1109/EPE.2015.7309208⟩
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hal-02920266
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Analysis of the three-chip switching cells approach for integrated multi-phase power converter combining monolithic and hybrid techniques: Experimental validation on SiC and Si power assembly prototypesPower Electronics and Applications (EPE'15 ECCE-Europe), 2015 17th European Conference on., Sep 2015, Genève, Switzerland. ⟨10.1109/EPE.2015.7311711⟩
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hal-01230267
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Realisation and characterisation of compact generic IGBT-based multiphase power converters using the two-chip multi-pole integration approach4th Micro/Nano-Electronics Packaging and Assembly, Design and Manufacturing Forum (MiNaPAD Forum 2015), April 21-23 2015, Grenoble (FRANCE), Apr 2015, Grenoble, France
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hal-01234269
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RC-IGBT-thyristor structure having trenches filled with dielectric on the backside: Physical analysis and application to the integration of a multiphase generic power converter using the "two-chip" approachPower Electronics and Applications (EPE'15 ECCE-Europe), 2015 17th European Conference on, Sep 2015, Geneva, Switzerland. ⟨10.1109/EPE.2015.7311704⟩
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hal-01235956
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A generic Reverse Conducting IGBT structure for monolithic switching cells integrationPower Electronics and Applications (EPE'14-ECCE Europe), 2014 16th European Conference on., Aug 2014, Lappeenranta, Finland. ⟨10.1109/EPE.2014.6910977⟩
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hal-01234236
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Comparison and design of InterCell transformer structures in fault-operation for parallel multicell convertersEnergy Conversion Congress and Exposition (ECCE), Pittsburgh, PA, (USA), 2014, Pittsburgh, United States. pp.3089-96, ⟨10.1109/ECCE.2014.6953820⟩
Communication dans un congrès
hal-03902992
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On-line Tj monitoring sensor embedded on VSI driver board - Application on a 5kW high speed PMSM for aeronautic "blowing-fanPCIM’14 – International Conference on Power Conversion and Intelligent Motion, 20-22 May 2014, Nuremberg (GERMANY), 2014, Nuremberg, Germany. pp.1-8
Communication dans un congrès
hal-03937621
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Monolithic Multi-poles Converter Device for Medium Power ApplicationsEuropean Power Electronics Conference and Application, EPE-ECCE, Aug 2014, Lappeenranta, Finland. pp.1-7, ⟨10.1109/EPE.2014.6911021⟩
Communication dans un congrès
hal-03937646
v1
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Design and fault-operation analysis of a modular, cyclic-cascade intercell transformer (ICT) for a parallel, X-phase converterElectrimacs 2014 : 11th International Conference on Modeling and Simulation of Electric Machines, Converters and Systems, 19-22 May 2014, Valence (SPAIN), 2014, Valence, Spain
Communication dans un congrès
hal-03937623
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Fault tolerant control for hybrid 4 leg npc-flying capacitors topologyElectrimacs 2014 : 11th International Conference on Modeling and Simulation of Electric Machines, Converters and Systems, 19-22 May 2014, Valence (SPAIN), 2014, Valence, Spain
Communication dans un congrès
hal-03937622
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A generic snapback free Reverse Conducting IGBT structure suitable for monolithic switching cells integrationEuropean Power Electronics Conference and Application, EPE-ECCE, 26 -28 août 2014, Lappeenranta (FINLAND), 2014, Lappeenranta, Finland
Communication dans un congrès
hal-03937647
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Sécurité électrique et reconfiguration sur défaillance interne - Des structures de base aux architectures complexesSéminaire organisé dans le cadre du CMCU LSE-ENIT / LAPLACE ENIT Tunis, TUNISIA, 2014, Tunis, Tunisie
Communication dans un congrès
hal-03987876
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Simulation d'une structure générique RC-IGBT sans "tension de retournement" adaptée à l'intégration monolithique de cellules de commutation sur puce SiSymposium de Génie Électrique 2014, Jul 2014, Cachan, France. 7p
Communication dans un congrès
hal-01065236
v1
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A single-chip integration approach of switching cells suitable for medium power applications.MIXDES 2013 : 20th International Conference 'Mixed Design of Integrated Circuits and Systems' Gdynia, Poland, Jun 2013, Gdynia, Poland. pp.421-5
Communication dans un congrès
hal-03937619
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Méthodologie de pré-dimensionnement d'un coupleur magnétique robuste à structure monolithique pour convertisseur parallèle entrelacéJCGE, Saint Nazaire, France, 2013, Saint Nazaire, France
Communication dans un congrès
hal-03937077
v1
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Switching Optimization of WBG Power Devices on Inverter LegPCIM Europe 2013; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, May 2013, Nürnberg, Germany
Communication dans un congrès
hal-02964301
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Multi-switch Si-chip structures and on-substrate packaging techniques for improving the electrical performance of power modules15th European Conference on Power Electronics and Applications, Lille, France, Sep 2013, Lille, France. ⟨10.1109/EPE.2013.6634426⟩
Communication dans un congrès
hal-03937620
v1
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Pre-design methodology and results of a robust monolithic InterCellTransformer (ICT) for parallel multicell converterIECON 2013: 39th Annual Conference of the IEEE Industrial Electronics Society, 2013, Vienne, Austria. ⟨10.1109/IECON.2013.6700505⟩
Communication dans un congrès
hal-03937078
v1
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PCB Dual-Switch Fuse with Energetic Materials Embedded. Application for New Fail-Safe and Fault-Tolerant ConvertersECPE – Workshop, "Integrated Power Boards", Rijswijk/Delft, Netherlands, 2012, Rijswijk/Delft, Netherlands
Communication dans un congrès
hal-04157346
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Monolithically integrated switching cells suitable for high density power conversion11th International Seminar on Power Semiconductors, Prague, Czech Republic, Aug 2012, Prague, Czech Republic. pp.222-229
Communication dans un congrès
hal-03937614
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New design and evaluation of a fully integrated PCB dual-switch fuse – Energetic materials assisted. Application for new fail-safe and fault-tolerant convertersPCIM 2012: International Conference on Power Conversion and Intelligent Motion, Nuremberg, GERMANY, 2012, Nuremberg, Germany
Communication dans un congrès
hal-03937499
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Conception et évaluation d’un rupteur-fusible multivoies, à assistance pyrotechnique, intégré sur PCB, pour l’isolement des défauts internes des convertisseurs d’électronique de puissance. Application à une nouvelle structure de redondanceEPF 2012: Electronique de Puissance du Futur, Bordeaux, France, 2012, Bordeaux, France
Communication dans un congrès
hal-03937616
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Cellules de commutation monolithiques intégrables sur siliciumEPF 2012: Electronique de Puissance du Futur, Bordeaux, France, Jul 2012, Bordeaux, France. 6p
Communication dans un congrès
hal-03937615
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Diagnosis strategies and reconfiguration of a 5-level double-boost PFC with fault-tolerant capabilityISIE 2011: IEEE International Symposium on Industrial Electronics, Gdansk, POLAND, 2011, Gdansk, Poland. ⟨10.1109/ISIE.2011.5984440⟩
Communication dans un congrès
hal-03902942
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Comparison of Short-Circuit Failure Capability of Epoxy Molded Package versus Silicone Gel Module for New Fault-Tolerant Inverter and Interleaved ChopperPCIM 2011: International Conference on Power Conversion and Intelligent Motion, Nuremberg, GERMANY, 2011, Nuremberg, Germany
Communication dans un congrès
hal-03891963
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Comparison of Short-Circuit Failure "Ohmic Mode" of Epoxy Molded Package versus Silicone Gel Module for New Fail-Safe and Interruptible Power Converters21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Bordeaux, France, 2011, Bordeaux, France
Communication dans un congrès
hal-03891964
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Short fail-safe capability and fault diagnosis strategies dedicated to a reconfigurable 5-level double-boost PFCEPE 2011: 14th European Conference on Power Electronics and Applications, Birmingham, UNITED KINGDOM, 2011, Birmingham, United Kingdom
Communication dans un congrès
hal-03902945
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Complete short-circuit failure mode properties and comparison based on IGBT standard packaging. Application to new fault-tolerant inverter and interleaved chopper with reduced parts count.EPE 2011: 14th European Conference on Power Electronics and Applications, Birmingham, UNITED KINGDOM, 2011, Birmingham, United Kingdom
Communication dans un congrès
hal-03891962
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Modes de vieillissement et de défaillance de modules IGBT sous cyclage actif à haute températureCongrès national EPF2010, 2010, Saint Nazaire, France
Communication dans un congrès
hal-01913792
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Comparison of different inverter architectures and controls in terms of conducted EMI2010 IEEE International Conference on Industrial Technology (ICIT 2010), Mar 2010, Vina del Mar, France. ⟨10.1109/ICIT.2010.5472713⟩
Communication dans un congrès
hal-01688869
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Fault Diagnosis and PD-PWM Reconfiguration of a 5-Level Double-Boost PFC with Fault-Tolerant CapabilityIECON 2010: 36th Annual Conference of the IEEE Industrial Electronics Society, Phoenix, USA, 2010, Phoenix, United States. ⟨10.1109/IECON.2010.5675074⟩
Communication dans un congrès
hal-03902865
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Exploring potentials and performance of two circuit architectures to develop a new integrated switch dedicated to self-switching power convertersEPE 2009: 13th European Conference on Power Electronics and Applications Conference, Barcelone,SPAIN, Sep 2009, Barcelone, Spain
Communication dans un congrès
hal-03937498
v1
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5-Level Double-Boost Type PFC with Fault-Tolerant CapabilityEPE 2009: 13th European Conference on Power Electronics and Applications, Barcelone, SPAIN, 2009, Barcelone, Spain
Communication dans un congrès
hal-03891756
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New self-controlled and self-protected IGBT based integrated switchISPSD 2009: 21th IEEE International Symposium on Power Semiconductor, Barcelone,SPAIN, Jun 2009, Barcelone, Spain
Communication dans un congrès
hal-03937497
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New self-controlled and self-protected integrated power switch9th International Seminar on Power Semiconductors, Prague, Czech Republic, Aug 2008, Prague, Czech Republic
Communication dans un congrès
hal-03937496
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New self-controlled and self-protected integrated power switchJournées Nationales du Réseau Doctotal de Recherche en Microélectronique, Bordeaux, France, May 2008, Bordeaux, France
Communication dans un congrès
hal-03937495
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Driver Générique d’Interrupteur Bidirectionnel Tension/Courant à Propriétés d’AucommutationEPF 2008, 1éème conférence de l'Electronique de Puissance du Futur, Jul 2008, Tours, France
Communication dans un congrès
hal-02966790
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Diagnostic thermique transitoire des assemblages pour composants de puissance - Evaluation théorique d'une méthode indirecte par déconvolution, non intrusive et sans a priori,EPF 2008: Congrès Electronique de Puissance du Futur, Tours, France, 2008, Tours, France
Communication dans un congrès
hal-03891720
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Development of a self-protected and self-controlled integrated power switch: comparison of two circuit architecturesIEEE Electronic Devices Society conference on Bipolar / BiCMOS Circuits and Technology, Monterey, Canada, Oct 2008, Monterey, Canada. pp.49-52
Communication dans un congrès
hal-03937493
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Thyristor dual intégré pour convertisseur à commutation automatiqueCongrés Electronique de Puissance du Futur, Tours, France, Jul 2008, Tours, France. 4p
Communication dans un congrès
hal-03937494
v1
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Safety Management and Fault Tolerant TopologiesWorkshop "Built-In Reliability", European Center for Power Electronics, 2008, Toulouse, France
Communication dans un congrès
hal-04072677
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Driver Générique pour Cellule de Commutation Bidirectionnelle en Tension et en CourantJournées GDR SEEDS-ISP3D 2007, Intégration des Systèmes de Puissances en 3D, Oct 2007, Arcachon, France
Communication dans un congrès
hal-02966800
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Stability of DC link with reduced energy storage for regenerative synchronous drive - Analytical approachEPE 2007 Conference, Sep 2007, Aalborg, Denmark. pp.0
Communication dans un congrès
hal-04044823
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Fault-Tolerant Power Supply for Embedded Electric DrivesWorkshop on power supply and energy management for defence applications, Agence européenne de la défense, Bruxelles, Belgium, 2007, Bruxelles, Belgium
Communication dans un congrès
hal-03987636
v1
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Design of an Integrated Self-Switching Mode Device for Power ConvertersMIXDES '07 : 14th International conference on Mixed design of integrated circuits and systems, Ciechocinek, Poland, Jun 2007, Ciechocinek, Poland. pp.574-579
Communication dans un congrès
hal-03937492
v1
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Comparison of four AC/DC Front Stage Converters Including an Original Regenerative Self-commutated RectifierWorkshop on power supply and energy management for defence applications, Agence européenne de la défense, Bruxelles, Belgium, 2007, Bruxelles, Belgium
Communication dans un congrès
hal-03987875
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Fault-tolerant inverter for on-board aircraft EHA2007 European Conference on Power Electronics and Applications, Sep 2007, Aalborg, Denmark. pp.1-9, ⟨10.1109/EPE.2007.4417537⟩
Communication dans un congrès
hal-02516717
v1
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Onduleur à tolérance de pannes dédié à l'alimentation d'un actionneur électrohydrostatique pour réseau avionElectronique de Puissance du Futur, 11ème édition, Jul 2006, Grenoble, France
Communication dans un congrès
hal-02516802
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A Trench IGBT distributed model with thermo-sensible parametersEPE 2005, Sep 2005, Dresde, Germany
Communication dans un congrès
hal-00184525
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Nouvelles fonctions de commutation de puissance intégrées sur SiliciumJournées GdR, Oct 2005, Lyon, France
Communication dans un congrès
hal-00188228
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METHODOLOGIE DE DIMENSIONNEMENT D'UN REDRESSEUR MLI A PRELEVEMENT SINUSConference: Electronique de Puissance du Futur EPF'1998, Dec 1998, Belfort, France
Communication dans un congrès
hal-02520119
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Fuse on PiN Silicon Diode Monolithic Integration for New Fail-Safe Power Converters TopologiesELECTRIMACS 2022, 993, Springer International Publishing, pp.289-303, 2023, Lecture Notes in Electrical Engineering, 978-3-031-24836-8. ⟨10.1007/978-3-031-24837-5_22⟩
Chapitre d'ouvrage
hal-04132175
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Introduction à la sûreté de fonctionnement de l'onduleur de tensionTechniques de l'ingénieur, Chapitre d'ouvrage, 2017, Modes de défauts principaux et principes de sécurisation
Chapitre d'ouvrage
hal-04052498
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De la gestion des contraintes de commutation à la commutation douceTechniques de l'ingénieur Convertisseurs électriques et applications, Base documentaire : TIB253DUO (d3077), Editions T.I., pp.1-10, 2008, ⟨10.51257/a-v1-d3077⟩
Chapitre d'ouvrage
hal-02900623
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Synthèse fonctionnelle des interrupteurs dans la cellule de commutationConvertisseurs électriques et applications, Base documentaire : TIB253DUO (d3076), Editions T.I., pp.1-18, 2008, ⟨10.51257/a-v1-d3076⟩
Chapitre d'ouvrage
hal-02882313
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Des dipôles à la cellule de commutationTechniques de l'ingénieur Convertisseurs électriques et applications, Base documentaire : TIB253DUO (d3075), Editions T.I., pp.1-14, 2006, ⟨10.51257/a-v1-d3075⟩
Chapitre d'ouvrage
hal-02882435
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Interactions convertisseur-machine2008
Autre publication scientifique
hal-04065148
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