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Frédéric Richardeau
Directeur de Recherche au CNRS
Lab. LAPLACE
Université de Toulouse, CNRS, INPT, UPS
Toulouse, France
51%
Libre accès
37
Documents
Affiliations actuelles
- 405657
Identifiants chercheurs
- frederic-richardeau
- 0000-0002-6964-8054
- Google Scholar : https://scholar.google.com/citations?hl=fr&user=3Vvd0SYAAAAJ
- IdRef : 059705744
Présentation
Frédéric Richardeau is a Research Director at the CNRS and has been a lecturer in power electronics for some twenty years at the LEEI-ENSEEIHT and then at Lab. LAPLACE - Toulouse - France. He was the leader of the CNRS GDR ME²-MS (Electrical Energy Management - from Materials to Systems) from 2001 to 2005. Founder and leader of the FIDIAG transverse action within LAPLACE from 2006 to 2013 and leader of the Power Electronics team from 2009 to 2015. Member of the CoNRS from 2016 to 2018, ANR and HCERES. His work focuses on the characterization, modeling and design of more robust active semiconductor Si and WBG components with controlled failure modes in connection with their gate-driver as an advanced monitoring, diagnostic and conditioning device, up to the search for secure, reconfigurable and fault-tolerant power electronics conversion structures for critical applications.
https://orcid.org/0000-0002-6964-8054
https://scholar.google.com/citations?hl=fr&user=3Vvd0SYAAAAJ&view_op=list_works&sortby=pubdate
https://www.researchgate.net/profile/Frederic-Richardeau
https://ieeexplore.ieee.org/author/38349724400?searchWithin=%22Author%20Ids%22:38349724400&history=no&highlight=true&returnFacets=ALL&returnType=SEARCH&sortType=newest
https://fr.linkedin.com/in/fr%C3%A9d%C3%A9ric-richardeau-8689b710a
Frédéric Richardeau est Directeur de Recherche au CNRS, chargé de cours spécialisé en électronique de puissance depuis plus de 25 ans au LEEI-ENSEEIHT puis au LAPLACE au sein de Toulouse - INP sur le site de l'ENSEEIHT. Animateur scientifique du pôle GDR ME²-MS (Maîtrise de l'Énergie Électrique – des Matériaux aux Systèmes) de 2001 à 2005, fondateur et animateur de l'action transversale intergroupe FIDIAG au sein du LAPLACE de 2006 à 2013 et responsable de l'équipe de recherche sur les Convertisseurs Statiques de 2009 à 2015 (30 personnes, enseignants, chercheurs et doctorants). Membre du CoNRS de 2016 à 2018, de l'ANR CES 05, de l'HCERES et ponctuellement du CNU 63ème section. Ses travaux portent sur la caractérisation, la modélisation et la conception de nouveaux composants actifs semi-conducteurs Silicium et WBG plus robustes et aux modes de défaillances maîtrisés en lien avec leur électronique de commande intégrée comme organe évolué de surveillance, de diagnostic et de conditionnement jusqu'à la recherche de structures de conversion électroniques de puissance sécurisées, reconfigurables et à tolérance de panne pour applications critiques.
https://orcid.org/0000-0002-6964-8054
https://scholar.google.com/citations?hl=fr&user=3Vvd0SYAAAAJ&view_op=list_works&sortby=pubdate
https://www.researchgate.net/profile/Frederic-Richardeau
https://ieeexplore.ieee.org/author/38349724400?searchWithin=%22Author%20Ids%22:38349724400&history=no&highlight=true&returnFacets=ALL&returnType=SEARCH&sortType=newest
https://fr.linkedin.com/in/fr%C3%A9d%C3%A9ric-richardeau-8689b710a
Domaines de recherche
Energie électrique
Compétences
Electronique de Puissance
Composants actifs semi-conducteurs
Modélisation
Intégration et technologies
Publications
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Full-SiC Single-Chip Buck and Boost MOSFET-JBS Converters for Ultimate Efficient Power Vertical IntegrationIEEE 30th International Conference Mixed Design of Integrated Circuits and Systems, Institute of Computer Science of AGH University of Science and Technology, Jun 2023, Kraków, Poland. https://www.mixdes.org/Mixdes3/, ⟨10.23919/MIXDES58562.2023.10203213⟩
Communication dans un congrès
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Full-SiC Single-Chip High-Side and Low-Side Dual-MOSFET for Ultimate Power Vertical Integration -Basic Concept and Technology25th Conference on Power Electronics and Applications (and Exhibition), EPE ’23 (IEEE) ECCE Europe (Energy Conversion Congress and Expo Europe), Sep 2023, Aalborg, Denmark. ⟨10.23919/EPE23ECCEEurope58414.2023.10264325⟩
Communication dans un congrès
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Concept and technology for full monolithic MOSFET and JBS vertical integration in multi-terminal 4H-SiC power converters20th International Conference on Silicon Carbide and Related Materials (ICSCRM) - ICSCRM 2023, Naples University - Federico II, Sep 2023, Sorrento, Italy
Communication dans un congrès
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Fast cut-off, low I 2 T and high temperature monolithic on-chip fuse on silicon substrate for new fail-safe embedded power switch32th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 2021, Oct 2021, Bordeaux, France
Communication dans un congrès
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New monolithic multi-terminal Si-chips integrating a power converter phase-leg for specific applications28th International Conference Mixed Design of Integrated Circuits and Systems (on-line) June 24-26, 2021, Lodz, POLAND, Jun 2021, Lodz (online), Poland. ⟨10.23919/MIXDES52406.2021.9497636⟩
Communication dans un congrès
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Fail-safe switching-cells architectures based on monolithic on-chip fuse22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe), Sep 2020, Lyon, France. pp.P.1-P.10, ⟨10.23919/EPE20ECCEEurope43536.2020.9215608⟩
Communication dans un congrès
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Complementary multi-terminal power chips integrating ultimate wire-bond-less switching cells for compact Si-power convertersEPE’19-ECCE Europe, Sept. 2-6, 2019, Geneva (ITALIA), 2019, Geneva, Italy
Communication dans un congrès
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Monolithic asymmetric switching cells integrated on vertical multi-terminal Si power chipsEPE Conference and Applications, Sep 2019, Gênes, Italy. 8p
Communication dans un congrès
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Switching Cells and Power Devices - An IntroductionECPE Tutorials, "Power Circuits for Clean Switching and Low Losses", 17 – 18 October 2018, INSA de Lyon, Campus LyonTech, La Doua Villeurbanne/Lyon, France, Oct 2018, Lyon, France
Communication dans un congrès
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Ensure an original and safe “fail-to-open” mode in planar and trench power SiC MOSFET devices in extreme short-circuit operation29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis ( ESREF 2018 ), Oct 2018, Aalborg, Denmark. pp.598-603, ⟨10.1016/j.microrel.2018.07.026⟩
Communication dans un congrès
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Towards innovative hybrid and ultra-compact switching-cellsPower Circuits for Clean Switching and Low Losses, Oct. 17-18, 2018, Lyon (FRANCE), 2018, Lyon, France
Communication dans un congrès
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Realization of a Monolithic Multi-Terminal Si-Power Chip Integrating a 2-Phase Rectifier Composed of Vertical PIN Diodes Insulated by Vertical P+Walls20th European Conference on Power Electronics and Applications (EPE'18 ECCE Europe), Sep 2018, Riga, Latvia
Communication dans un congrès
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Monolithic Complementary Multi-terminal RC-IGBT Chips for Compact Multi-phase Power Converter25th International Conference "Mixed Design of Integrated Circuits and System" (MIXDES 2018), Jun 2018, Gdynia, Poland. 5p., ⟨10.23919/MIXDES.2018.8436866⟩
Communication dans un congrès
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Mixed monolithic-hybrid integration of multiphase power converter: preliminary evaluation of the 3-chip integration conceptESARS ITEC 2016 - 4th International Conference on Electrical Systems for Aircraft, Railway, Ship propulsion and Road Vehicles & International Transportation Electrification Conference, Nov 2016, Toulouse, France
Communication dans un congrès
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Puces multipôles compactes à RC-IGBT pour l'intégration fractionnée et optimale de cellules de commutation. Evaluation des performances électriques sur PCB.Symposium de Genie Electrique, Jun 2016, Grenoble, France
Communication dans un congrès
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Analysis of the three-chip switching cells approach for integrated multi-phase power converter combining monolithic and hybrid techniques: Experimental validation on SiC and Si power assembly prototypesPower Electronics and Applications (EPE'15 ECCE-Europe), 2015 17th European Conference on., Sep 2015, Genève, Switzerland. ⟨10.1109/EPE.2015.7311711⟩
Communication dans un congrès
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RC-IGBT-thyristor structure having trenches filled with dielectric on the backside: Physical analysis and application to the integration of a multiphase generic power converter using the "two-chip" approachPower Electronics and Applications (EPE'15 ECCE-Europe), 2015 17th European Conference on, Sep 2015, Geneva, Switzerland. ⟨10.1109/EPE.2015.7311704⟩
Communication dans un congrès
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Realisation and characterisation of compact generic IGBT-based multiphase power converters using the two-chip multi-pole integration approach4th Micro/Nano-Electronics Packaging and Assembly, Design and Manufacturing Forum (MiNaPAD Forum 2015), April 21-23 2015, Grenoble (FRANCE), Apr 2015, Grenoble, France
Communication dans un congrès
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A generic snapback free Reverse Conducting IGBT structure suitable for monolithic switching cells integrationEuropean Power Electronics Conference and Application, EPE-ECCE, 26 -28 août 2014, Lappeenranta (FINLAND), 2014, Lappeenranta, Finland
Communication dans un congrès
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A generic Reverse Conducting IGBT structure for monolithic switching cells integrationPower Electronics and Applications (EPE'14-ECCE Europe), 2014 16th European Conference on., Aug 2014, Lappeenranta, Finland. ⟨10.1109/EPE.2014.6910977⟩
Communication dans un congrès
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Monolithic Multi-poles Converter Device for Medium Power ApplicationsEuropean Power Electronics Conference and Application, EPE-ECCE, Aug 2014, Lappeenranta, Finland. pp.1-7, ⟨10.1109/EPE.2014.6911021⟩
Communication dans un congrès
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Simulation d'une structure générique RC-IGBT sans "tension de retournement" adaptée à l'intégration monolithique de cellules de commutation sur puce SiSymposium de Génie Électrique 2014, Jul 2014, Cachan, France. 7p
Communication dans un congrès
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A single-chip integration approach of switching cells suitable for medium power applications.MIXDES 2013 : 20th International Conference 'Mixed Design of Integrated Circuits and Systems' Gdynia, Poland, Jun 2013, Gdynia, Poland. pp.421-5
Communication dans un congrès
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Multi-switch Si-chip structures and on-substrate packaging techniques for improving the electrical performance of power modules15th European Conference on Power Electronics and Applications, Lille, France, Sep 2013, Lille, France. ⟨10.1109/EPE.2013.6634426⟩
Communication dans un congrès
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Monolithically integrated switching cells suitable for high density power conversion11th International Seminar on Power Semiconductors, Prague, Czech Republic, Aug 2012, Prague, Czech Republic. pp.222-229
Communication dans un congrès
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Cellules de commutation monolithiques intégrables sur siliciumEPF 2012: Electronique de Puissance du Futur, Bordeaux, France, Jul 2012, Bordeaux, France. 6p
Communication dans un congrès
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Exploring potentials and performance of two circuit architectures to develop a new integrated switch dedicated to self-switching power convertersEPE 2009: 13th European Conference on Power Electronics and Applications Conference, Barcelone,SPAIN, Sep 2009, Barcelone, Spain
Communication dans un congrès
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Design of an Integrated Self-Switching Mode Device for Power ConvertersMIXDES '07 : 14th International conference on Mixed design of integrated circuits and systems, Ciechocinek, Poland, Jun 2007, Ciechocinek, Poland. pp.574-579
Communication dans un congrès
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Fuse on PiN Silicon Diode Monolithic Integration for New Fail-Safe Power Converters TopologiesELECTRIMACS 2022, 993, Springer International Publishing, pp.289-303, 2023, Lecture Notes in Electrical Engineering, 978-3-031-24836-8. ⟨10.1007/978-3-031-24837-5_22⟩
Chapitre d'ouvrage
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Puces multipôles de puissance intégrant de manière monolithique des cellules de découpage asymétriques et modules de puissance multi-phase utilisant la ou plusieurs desdites puces multipôlesFrance, N° de brevet: FR3060849A1. 2016
Brevet
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Convertisseur électronique de puissance utilisant deux puces multi-pôles de puissance à substrats complémentaires N et PFrance, N° de brevet: FR3050571A1. 2016
Brevet
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Cellule monolithique de circuit intégré et notamment cellule de commutation monolithiqueFrance, N° de brevet: FR2981200A1. 2011
Brevet
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