Publications
Publications
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Characterization of a Fault-Tolerant RISC-V SoC in an SRAM-based FPGA under Proton Irradiation27th IEEE Latin American Test Symposium, Mar 2026, Florianopolis, Brazil |
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Comparative analysis of SEGR and SEB susceptibility in Si and SiC MOSFETs using TCAD modelingRADECS 2025 - RADiation and its Effects on Components and Systems Conference, Sep 2025, Anvers, Belgium |
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HARV-SoC Evaluation on SmartFusion2 and PolarFire FPGAs Under Neutron RadiationRadiation and its Effects on Components and Systems Conference, Sep 2025, Antwerp, Belgium |
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Special Session Paper: Simulation Methodologies and Experiments for Reliability Analysis of Devices in Radiation Harsh Environments38th IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, Oct 2025, Barcelona, Spain |
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Physical Explanation for the Higher Sensitivity to Ion-Induced Burnout in SiC Schottky Diodes Compared to Si Schottky DiodesRADiation Effects on Components and Systems (RADECS), Sep 2024, Maspalomas, Canary Islands, Spain |
Proton and Electron Flux Measurement and Simulation during Stratospheric Balloon FlightsRADECS 2023, Sep 2023, Toulouse, France |
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Impact of Ground Material and Space Protons Direction on Neutron Flux in AtmosphereNSREC, Jul 2023, Kansas City (US), United States |
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Studying the South Atlantic Anomaly temporal evolution from 1998 to 2022 using the SEM-2 proton fluxEGU, Apr 2023, Vienne (Austria), Austria. ⟨10.5194/egusphere-egu23-12704⟩ |
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CARMEN 2 & 3 LEO data projection on RBSP elliptical orbit using machine learning algorithmsRADECS, Oct 2022, Venice Italy, Italy |
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Benchmarks of Energy Deposition Studies for Heavy-Ion Collimation Losses at the LHC13th International Particle Accelerator Conference, Jun 2022, Muangthong Thani, Thailand. pp.WEPOST019, ⟨10.18429/JACoW-IPAC2022-WEPOST019⟩ |
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LEO on Electric Orbit Raising (EOR) projection from CARMEN 3 and 4 datasCOSPAR, Jul 2022, Athens (Greece), Greece |
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Impact of Atmospheric and Space Radiation on Sensitive Electronic DevicesETS 2022 - 27th IEEE European Test Symposium, May 2022, Barcelona, Spain. pp.1-10, ⟨10.1109/ets54262.2022.9810454⟩ |
Power Deposition Studies for Crystal-Based Heavy Ion Collimation in the LHC13th International Particle Accelerator Conference, Jun 2022, Muangthong Thani, Thailand. pp.WEPOST018, ⟨10.18429/JACoW-IPAC2022-WEPOST018⟩ |
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Risk of Halo-Induced Magnet Quenches in the HL-LHC Beam Dump Insertion12th International Particle Accelerator Conference , May 2021, Online, Brazil. pp.MOPAB002, ⟨10.18429/JACoW-IPAC2021-MOPAB002⟩ |
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Impact of electrical stress and neutron irradiation on reliability of silicon carbide power MOSFETIEEE RADECS 2019, Sep 2019, Montpellier, France. pp.1365 - 1373, ⟨10.1109/TNS.2020.2983599⟩ |
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Evaluation and Analysis of Technologies for Robotic Platforms for the Nuclear Decommissioning2020 15th Design & Technology of Integrated Systems in Nanoscale Era (DTIS), Apr 2020, Marrakech, Morocco. pp.1-6, ⟨10.1109/DTIS48698.2020.9081293⟩ |
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Development and evaluation of a flexible instrumentation layer for system-level testing of radiation effectsIEEE Latin American Test Symposium (LATS) 2020, Mar 2020, Maceio, Brazil. pp.1-6, ⟨10.1109/LATS49555.2020.9093681⟩ |
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Effect of Temperature on Single Event Latchup SensitivityInternational Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), Apr 2020, Marrakech, Morocco. ⟨10.1109/dtis48698.2020.9081275⟩ |
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Exploiting Transistor Folding Layout as RHBD technique against Single Event TransientsIEEE RADECS 2019, Sep 2019, Montpellier, France. pp.1581 - 1589, ⟨10.1109/tns.2020.3003166⟩ |
Silicon carbide power MOSFETs under neutron irradiation: Failure In Time demonstration and long term reliability degradation evaluation55th IEEE Nuclear Space and Radiation Effects Conference, Jul 2019, San Antonio, United States |
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Single Event Latchup Cross Section Calculation from TCAD Simulations – Effects of the Doping Profiles and Anode to Cathode SpacingIEEE RADECS 2019, Sep 2019, Montpellier, France |
Analysis of Total Dose Effects on a PDSOI n-channel High Voltage Transistor for Analog ApplicationsIEEE RADECS 2019, Sep 2019, Montpellier, France |
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TCAD simulation of radiation-induced leakage current in SDRAM29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2018), Oct 2018, Aalborg, Denmark |
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SEE Flux and Spectral Hardness Calibration of Neutron Spallation and Mixed Field FacilitiesRADECS: Radiation Effects on Components and Systems, Sep 2018, Goteborg, Sweden |
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Impact of Complex-Logic Cell Layout on the Single-Event Transient SensitivityIEEE RADECS2018, Sep 2018, Goteborg, Sweden |
Investigation on Passive and Autonomous Mode Operation of Floating Gate DosimetersIEEE RADECS2018, 2018, Goteborg, Sweden |
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Analysis of the charge sharing effect in the SET sensitivity of bulk 45nm standard cell layouts under heavy ions29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2018), Oct 2018, Aalborg, Denmark |
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Aging and Gate Bias Effects on TID Sensitivity of Wide Bandgap Power DevicesIEEE RADECS2018, Sep 2018, Goteborg, Sweden |
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A calculation method to estimate single event upset cross sectionESREF 2017 - 28th European Symposium on Reliability of Electron devices, Failure physics and analysis, Sep 2017, Bordeaux, France. pp.644-649, ⟨10.1016/j.microrel.2017.07.056⟩ |
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Monte Carlo simulation of particle-induced bit upsets13th International Conference on Radiation Shielding (ICRS-13) & 19th Topical Meeting of the Radiation Protection & Shielding Division of the American Nuclear Society -2016 (RPSD-2016), Oct 2016, Paris, France. pp.06033, ⟨10.1051/epjconf/201715306033⟩ |
Investigation on the Sensitivity Degradation of Dosimeters based on Floating Gate StructureIEEE RADECS, 2017, Genève, Switzerland |
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Floating Gate Dosimeter suitability for Accelerator-like Environments16th European Conference on Radiation and its Effects on Components and Systems (IEEE RADECS), 2016, Bremen, Germany. pp.2054-2060, ⟨10.1109/TNS.2017.2681651⟩ |
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Analysis of Single-Event Effects in DDR3 and DDR3L SDRAMs Using Laser Testing and Monte-Carlo SimulationsNSREC 2017, 2017, New Orleans, United States |
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Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random- Access MemoryRADECS: Radiation and Its Effects on Components and Systems, Oct 2017, Genève, Switzerland |
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TCAD prediction of dose effects on MOSFETs with ECORCEIEEE RADECS, 2017, Genève, Switzerland |
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Structural pattern extraction from asynchronous two-photon laser fault injection using spectral analysisEuropean Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF) 2017, 2017, Bordeaux, France |
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The Power Law Shape of Heavy Ions Experimental Cross SectionNSREC: Nuclear and Space Radiation Effects Conference, IEEE NPSS (Nuclear & Plasma Sciences Society ), Jul 2016, Portland, United States |
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TCAD Simulations of Leakage Currents Induced by SDRAM Single-Event Cell DegradationIEEE RADECS 2016, 2016, Brême, Germany |
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MTCube project: COTS memory SEE ground-test results and in-orbit error rate prediction4S: Small Satellites Systems and Services Symposium, Centre national d'études spatiales (CNES); European Space Agency (ESA), May 2016, La Valletta, Malta |
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Comparison of the Effects of Muon and Low-Energy Proton Irradiation on a 65 nm Low-Power SRAMRADECS: Radiation and Its Effects on Components and Systems, Sep 2016, Bremen, Germany |
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SEL Hardness Assurance in a Mixed Radiation Field51th IEEE Nuclear Space and Radiation Effects Conference, 2015, Boston, United States |
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Real-Time SRAM Based Particle DetectorIWASI: International Workshop on Advances in Sensors and Interfaces, Politecnico di Bari, Jun 2015, Gallipoli, Italy. pp.58-62, ⟨10.1109/IWASI.2015.7184968⟩ |
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Proton-Induced SDRAM Cell DegradationRADECS: Radiation and Its Effects on Components and Systems, Sep 2015, Moscou, Russia. ⟨10.1109/RADECS.2015.7365650⟩ |
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Simulation tools for soft error rate calculations in SRAMCMOS Emerging Technologies Conference, 2015, Vancouver, Canada |
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Experimental Characterization and In-flight Observation of Weakened Cells in SDRAMIEEE RADECS 2015, 2015, Moscou, Russia |
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A Methodology for the Analysis of Memory Response to Radiation through Bitmap Superposition and SlicingRADECS: Radiation and Its Effects on Components and Systems, Sep 2015, Moscou, Russia. ⟨10.1109/RADECS.2015.7365578⟩ |
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Investigation of Alpha Emissivity as a Function of Time51th IEEE Nuclear Space and Radiation Effects Conference, 2015, Boston, United States |
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Impact of Stacked-Layer Structure on SEE Rate of SRAMsNSREC: Nuclear and Space Radiation Effects Conference, IEEE / NPSS, Jul 2015, Boston, United States |
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Heavy-ion radiation impact on a 4Mb FRAM under Different Test ConditionsRADECS: Radiation and Its Effects on Components and Systems, Sep 2015, Moscou, Russia. ⟨10.1109/RADECS.2015.7365617⟩ |
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Generic Analytic Expression of Heavy Ion SEU Cross Section Derived from Monte-Carlo Diffusion-Based Prediction CodeNSREC: Nuclear and Space Radiation Effects Conference, IEEE / NPSS, Jul 2015, Boston, United States |
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Investigation on MCU Clustering Methodologies for Cross-Section Estimation of RAMsNSREC: Nuclear and Space Radiation Effects Conference, Jul 2015, Boston, MA, United States. ⟨10.1109/TNS.2015.2496874⟩ |
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Impact of natural radioactivity on the Soft Error RateCMOS Emerging Technologies Conference, 2014, Grenoble, France |
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Single Event Upset Prediction from Heavy Ions Cross Sections with No ParametersNSREC: Nuclear and Space Radiation Effects Conference, Jul 2014, Paris, France |
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Presentation of the MTCube CubeSat Project4S Symposium 2014 - Small Satellites Systems and Services, European Space Agency (ESA); Centre National d'Etudes Spatiales (CNES), May 2014, Majorca, Spain |
Contraintes radiatives que subit l'électronique au sol et en altitude - Notions fondamentalesJournées RADSOL du GDR ERRATA, 2014, Paris, France |
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Use of CCD to Detect Terrestrial Cosmic Rays at Ground Level: Altitude Vs. Underground Experiments, Modeling and Numerical Monte Carlo SimulationNSREC: Nuclear and Space Radiation Effects Conference, Jul 2014, Paris, France |
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On the Use of Post-Irradiation-Gate-Stress Results to Refine Sensitive operating area determination50th IEEE Nuclear Space and Radiation Effects Conference, 2014, Paris, France |
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SEL Cross Section Energy Dependence Impact on the High Energy Accelerator Failure Rate50th IEEE Nuclear Space and Radiation Effects Conference, 2014, Paris, France |
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Real-Time Testing of 90nm COTS SRAMs at Concordia Station in AntarcticaNSREC: Nuclear and Space Radiation Effects Conference, Jul 2014, Paris, France |
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Efficient Dynamic Test Methods for COTS SRAMs Under Heavy Ion IrradiationNSREC: Nuclear and Space Radiation Effects Conference, Jul 2014, Paris, France |
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SEL Cross Section Energy Dependence Impact on the High-Energy Accelerator Error RateIEEE-NSREC 2014, 2014, Paris, France |
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SEU Cross Section Calculation Based on Experimental Data of Another kind of ParticleNSREC: Nuclear and Space Radiation Effects Conference, Jul 2014, Paris, France |
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An Integrated Solid Detector For Onboard Detection Of Natural Radiations In AtmosphereiWoRID: International Workshop on Radiation Imaging Detectors, SOLEIL synchrotron, Jun 2013, Paris, France |
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Post-Irradiation-Gate-Stress on Power MOSFETs: Quantification of Latent Defects-Induced Reliability DegradationNuclear and Space Radiation Effects (NSREC), 2013, San Francisco, United States |
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Characterization of an SRAM Based Particle Detector For Mixed-Field Radiation EnvironmentsIWASI: International Workshop on Advances in Sensors and Interfaces, Jun 2013, Bari, Italy. pp.75-80, ⟨10.1109/IWASI.2013.6576070⟩ |
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Impact of Single Event Gate Rupture and latent defects on Power MOSFETs switching operationIEEE RADECS 2013, 2013, Oxford, United Kingdom |
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SRAM Soft Error Rate Evaluation Under Atmospheric Neutron Radiation and PVT variationsIOLTS: International On-Line Testing Symposium, Jul 2013, Chania, Crete, Greece. pp.145-150, ⟨10.1109/IOLTS.2013.6604066⟩ |
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SEE Measurements and Simulations using Mono-Energetic GeV-Energy Hadron BeamsNuclear and Space Radiation Effects (NSREC), 2013, San Francisco, United States |
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Gate voltage contribution to neutron-induced SEB of Trench Gate Fieldstop IGBTRADECS: Radiation and Its Effects on Components and Systems, Sep 2013, Oxford, United Kingdom. ⟨10.1109/RADECS.2013.6937428⟩ |
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Comparison of the transient current shapes obtained with the diffusion model and the double exponential law — Impact on the SERRADECS: Radiation and Its Effects on Components and Systems, Sep 2013, Oxford, United Kingdom. ⟨10.1109/RADECS.2013.6937441⟩ |
On the correlation between Static Noise Margin and Soft Error Rate evaluated for a 40nm SRAM cellDFT: Defect and Fault Tolerance in VLSI and Nanotechnology Systems, Oct 2013, New York, United States. pp.143-148, ⟨10.1109/DFT.2013.6653597⟩ |
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Temperature Impact on the Neutron SER of a Commercial 90nm SRAMNSREC: Nuclear and Space Radiation Effects Conference, Jul 2013, San Francisco, Ca, United States. pp.1-4 |
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Multiple-Cell-Upsets on a commercial 90nm SRAM in Dynamic ModeRADECS: Radiation and Its Effects on Components and Systems, Sep 2013, Oxford, United Kingdom. pp.1-4, ⟨10.1109/RADECS.2013.6937429⟩ |
Analytical Method to Evaluate Soft Error Rate Due to Alpha PollutantsNuclear and Space Radiation Effects (NSREC), 2013, San Francisco, United States |
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Problématique et ordres de grandeurJournées RADSOL du GDR ERRATA, 2013, Paris, France |
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Evaluating An SEU Monitor For Mixed-Field Radiation EnvironmentsiWoRID: International Workshop on Radiation Imaging Detectors, SOLEIL Synchrotron, Jun 2013, Paris, France |
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Effect of thorium decay chain disequilibrium on alpha emissivityIEEE RADECS 2013, 2013, Oxford, United Kingdom |
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SEU Monitoring in Mixed-Field Radiation Environments of Particle AcceleratorsRADECS: Radiation and Its Effects on Components and Systems, Sep 2013, Oxford, United Kingdom. pp.1-4, ⟨10.1109/RADECS.2013.6937419⟩ |
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Complete Framework for the Estimation of the SRAM Core-Cell Resilience to RadiationRADECS: Radiation and its Effects on Components and Systems, Sep 2012, Biarritz, France |
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A Simple Method for Assessing Power Devices Sensitivity to SEEs in Atmospheric EnvironmentIEEE RADECS 2012, 2012, Biarritz, France |
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SEU Measurements and Simulations in a Mixed Field EnvironmentIEEE RADECS 2012, 2012, Biarritz, France |
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Characteristics of the Transient Currents Induced by Atmospheric Neutrons on a 40nm Electrode of an NMOS TransistorNSREC: Nuclear and Space Radiation Effects Conference, Jul 2012, Miami, Florida, United States. pp.1-4 |
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A Novel Framework for Evaluating the SRAM Core-Cell Sensitivity to NeutronsRADECS: European Conference on Radiation and Its Effects on Components and Systems, Sep 2012, Biarritz, France. pp.1-4 |
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Proton Flux Anisotropy in the Atmosphere: Experiment and ModelingRADECS: European Conference on Radiation and Its Effects on Components and Systems, Sep 2012, Biarritz, France. pp.1-4 |
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Trench Fieldstop IGBT failures at ground levelSEE Symposium, 2012, San Diego, United States |
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A Silicon Diode Based Detector for the Natural Radiative Environment Measurement in AltitudeIEEE (Nuclear Plasma Society) Real Time Conference, Jun 2012, Berkeley, CA, United States. pp.1-6, ⟨10.1109/RTC.2012.6418104⟩ |
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Alpha particle-induced transient currents in 65 nm and 40 nm technologiesSEE'2012: Single Event Effects Symposium, Apr 2012, San Diego, CA, United States. pp.1 |
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Dynamic Mode Test of a Commercial 4Mb Toggle MRAM under Neutron RadiationRADECS: European Conference on Radiation and Its Effects on Components and Systems, Sep 2012, Biarritz, France. pp.1-4 |
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Soft Error Triggering Criterion Based on Simple Electrical Model of the SRAM cellIEEE RADECS 2012, 2012, Biarritz, France |
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Neutrons-induced IGBT Failure: Effects of the Number of Tested Devices on the Cross Section CalculationIEEE RADECS 2012, 2012, Biarritz, France |
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Evaluation of Test Algorithms Stress Effect on SRAMs under Neutron RadiationIOLTS: International On-Line Testing Symposium, Jun 2012, Sitges, Spain. pp.212-222, ⟨10.1109/IOLTS.2012.6313853⟩ |
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Synergy of non-ionizing and ionizing processes in the reliability degradation of Power MOSFETs oxideIEEE RADECS, 2011, Seville, Spain |
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Neutron-Induced Failure in Super-Junction, IGBT, and SiC Power DevicesRADECS: Radiation and Its Effects on Components and Systems, Sep 2011, Seville, Spain. pp.226-231, ⟨10.1109/RADECS.2011.6131395⟩ |
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Dynamic-Stress Neutrons Test of Commercial SRAMsIEEE Nuclear and Space Radiation Effects Conference, Jul 2012, Las Vegas, NV, United States. pp.1-4 |
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Neutron-Induced Multiple Bit Upsets on Dynamically-Stressed Commercial SRAM ArraysRADECS: European Conference on Radiation and Its Effects on Components and Systems, Sep 2011, Seville, Spain. pp.274-280, ⟨10.1109/RADECS.2011.6131396⟩ |
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Neutron-Induced Failures of Trench Gate Fieldstop IGBTIEEE NSREC, 2011, Las Végas, United States |
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Robust Data Collection and Transfer Framework for a Distributed SRAM Based Neutron SensorIEEE International Workshop on Advances in Sensors and Interfaces, Jun 2011, Savelletri di Fasano, Italy. pp.176-180, ⟨10.1109/IWASI.2011.6004712⟩ |
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Neutron Detection in Atmospheric Environment through Static and Dynamic SRAM-Based Test BenchIEEE Latin American test Workshop, Mar 2011, Porto de Galinhas, Brazil. pp.1-6 |
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Effect of Uranium Chain Disequilibrium on Alpha Disintegration RateIEEE NSREC, 2011, Las Végas, United States |
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A Monte-Carlo Engineer Tool for the Prediction of SEU Proton Cross Section from Heavy Ion DataRADECS 2011, 2011, Seville, Spain |
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Alpha-Soft Error Rate due to new generations of high-k gate oxides and metal gate electrodes in a 32 nm nodeRADECS 2011, 2011, Seville, Spain |
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Behavior of CVD diamond-based TL dosimeters in radiotherapy environments using photon and electron beams from treatment accelerators21st Conference on Diamond, Diamond like Materials, Carbon Nanotubes and Nitrides, Sep 2010, Budapest, Hungary |
ORACLE : A tool for predicting Soft Error RateSupercomputing in nuclear Application, 2010, Tokyo, Japan |
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Impact of Resistive-Open Defects on SRAM sensitivity to Soft ErrorsRADECS: European Conference on Radiation and Its Effects on Components and Systems, Sep 2010, Langenfeld, Austria |
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Front End of Line, Back End of Line, and Packaging Contribution to Soft Errors Induced by Alpha Particles47th IEEE Nuclear Space and Radiation Effects Conference, 2010, Denver, United States |
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Caractérisation électromagnétique d'une diode perturbée par des convertisseurs lors d'une campagne de mesures en ballonClub Opto-Hyper, May 2010, Toulouse, France |
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ORACLE: A tool for predicting Soft Error RateSupercomputing in nuclear Application, 2010, Tokyo, Japan |
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Comparison of SER induced by Uranium and Thorium8th European Workshop on Radiation and its Effects on Components and Systems, 2010, Langenfeld, Austria |
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Velocity effect on heavy ion-induced gate oxide latent defects47th IEEE Nuclear Space and Radiation Effects Conference, 2010, Denver, United States |
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R&D For a GEANT4-based, multi-scale simulation environment to study the radiation effects on electronic devicesSupercomputing in nuclear Application, 2010, Tokyo, Japan |
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Radioactive Nuclei Induced Soft Errors at Ground Level46th IEEE Nuclear Space and Radiation Effects Conference, 2009, Québec, Canada |
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Use of BOBST for the Detection of Neutrons Induced Errors in SRAMIWASI: International Workshop on Advances in Sensors and Interfaces, Jun 2009, Trani, Italy |
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Neutron Detection through an SRAM-Based Test BenchIWASI'09: International Workshop On Advances in Sensors and Interfaces, Jun 2009, Trani, Italy. pp.64-69, ⟨10.1109/IWASI.2009.5184769⟩ |
Prediction of Multiple Cell Upset induced by heavy ions in a 90nm bulk SRAM7th European Workshop on Radiation and its Effects on Components and Systems, 2008, Jyvaskyla, Finland |
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Hafnium and Uranium Contributions to Soft Error Rate45th IEEE Nuclear Space and Radiation Effects Conference, 2008, Tucson, United States |
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Study of the Contribution of Latent Defects Induced by Swift Heavy Ion Irradiation on the Gate Oxide Breakdown7th European Workshop on Radiation and its Effects on Components and Systems, 2008, Jyvaskyla, Finland |
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30 MeV and 63 MeV neutron induced energy deposition in a silicon diode: Experimental validation of Monte Carlo simulation45th IEEE Nuclear Space and Radiation Effects Conference, 2008, Tucson, United States |
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Investigation of the influence of process and design on soft error rate in integrated CMOS technologies thanks to Monte Carlo simulation2008 IEEE International Reliability Physics Symposium (IRPS), Apr 2008, Phoenix, United States. ⟨10.1109/RELPHY.2008.4559010⟩ |
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Multiple Event Transient Induced by Nuclear Reactions in CMOS Logic Cells13th IEEE International On-Line Testing symposium (IOLT'07), Jul 2007, Crete, Greece. pp.137-145, ⟨10.1109/IOLTS.2007.46⟩ |
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Determination of the Deposited Energy in a Silicon Volume by n-Si Nuclear Interaction using 14 MeV neutron source43th IEEE Nuclear Space and Radiation Effects Conference, 2006, Ponte Vedra Beach, United States |
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Prediction of transients induced by neutrons/protons in CMOS combinational logic cells12th IEEE International On-Line Testing Symposium (IOLTS'06), 2006, Lake Como, Italy. 9 pp., ⟨10.1109/IOLTS.2006.51⟩ |
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A review of DASIE code family: contribution to SEU/MBU understanding11th IEEE International On-Line Testing Symposium, 2005, Saint Raphael, France |
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Comparison of Experimental and Simulated Am/Be Neutron Source Energy Spectra Obtained in Silicon Detector8th European Conference on Radiation and its Effects on Components and Systems, 2005, Cap d'Agde, France |
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Neutron-Induced SEU in SRAMs: Simulations With n-Si and n-O Interactions42th IEEE Nuclear Space and Radiation Effects Conference, 2005, Seattle, United States |
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Monte-Carlo simulations to quantify neutron-induced multiple bit upsets in advanced SRAMs5th European Workshop on Radiation and its Effects on Components and Systems, 2004, Madrid, Spain |
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SEU calculations for neutron induced alpha in sensitive RAMs41th IEEE Nuclear Space and Radiation Effects Conference, 2004, Atlanta, United States |
A Detailed Electrical Analysis of SEE on 28 nm FDSOI SRAM ArchitecturesIEEE, pp.1-6, 2023, ⟨10.1109/SBCCI60457.2023.10261665⟩ |
Single-Event Effects, from Space to Accelerator EnvironmentsSpringer International Publishing, 2025, ISBN978-3-031-71723-9. ⟨10.1007/978-3-031-71723-9⟩ |