Gerard Ghibaudo

734
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Publications

p-type NiOx ultrathin film as highly efficient hole extraction layer in n-type PbS quantum dots based NIR photodiode

Louis David Mohgouk Zouknak , Mickael Gros-Jean , Serge Blonkowski , Charles Leroux , Gérard Ghibaudo
Solid-State Electronics, 2024, 212, pp.108836. ⟨10.1016/j.sse.2023.108836⟩
Article dans une revue cea-04776269 v1
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Numerical simulation and analytical modelling of self-heating in FDSOI MOSFETs down to very deep cryogenic temperatures

Gérard Ghibaudo , M. Cassé , Francis Balestra
World journal of physics, 2023, 01 (02), pp.87-109. ⟨10.56439/WJP/2023.1110⟩
Article dans une revue hal-04273066 v1

On the Zero Temperature Coefficient in FD-SOI MOSFETs

Edoardo Catapano , Tadeu Mota Frutuoso , Mikael Casse , Gérard Ghibaudo
IEEE Transactions on Electron Devices, 2023, 70 (3), pp.845
Article dans une revue cea-04083773 v1

On the Fluctuation–Dissipation of the Oxide Trapped Charge in a MOSFET Operated Down to Deep Cryogenic Temperatures

Gérard Ghibaudo
Fluctuation and Noise Letters, 2023, ⟨10.1142/S0219477523500451⟩
Article dans une revue hal-04264285 v1
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Numerical simulation of electro-thermal properties in FDSOI MOSFETs down to deep cryogenic temperatures

Gérard Ghibaudo , Francis Balestra
Journal of Electronics and Electrical Engineering, 2023, 2 (1), pp.2498. ⟨10.37256/jeee.2120232498⟩
Article dans une revue hal-04246042 v1
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On-wafer drain current aariability in GaN MIS-HEMT on 200-mm silicon substrates

Romeo Kom Kammeugne , Charles Leroux , Christoforos Theodorou , Laura Vauche , Matthew Charles et al.
Journal of Electronics and Electrical Engineering, 2023, 2 (1), pp.12-23. ⟨10.37256/jeee.2120232132⟩
Article dans une revue hal-04305208 v1

Cryogenic MOSFET Subthreshold Current: From Resistive Networks to Percolation Transport in 1-D Systems

E. Catapano , M. Cassé , G. Ghibaudo
IEEE Transactions on Electron Devices, 2023, pp.1-6. ⟨10.1109/TED.2023.3283941⟩
Article dans une revue hal-04134155 v1

New insights into low frequency noise (LFN) sources analysis in GaN/Si MIS-HEMTs

R. Kom Kammeugne , Christoforos Theodorou , C. Leroux , L. Vauche , Xavier Mescot et al.
Solid-State Electronics, 2023, 200, pp.108555. ⟨10.1016/j.sse.2022.108555⟩
Article dans une revue hal-03897338 v1
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TCAD simulations of FDSOI devices down to deep cryogenic temperature

E. Catapano , M. Cassé , F. Gaillard , S. de Franceschi , Tristan Meunier et al.
Solid-State Electronics, 2022, 194, pp.108319. ⟨10.1016/j.sse.2022.108319⟩
Article dans une revue hal-03974981 v1
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Modelling of self-heating effect in FDSOI and bulk MOSFETs operated in deep cryogenic conditions

Gérard Ghibaudo , M. Cassé , F. Serra Di Santa Maria , Christoforos Theodorou , Francis Balestra
Solid-State Electronics, 2022, 192, pp.108265. ⟨10.1016/j.sse.2022.108265⟩
Article dans une revue hal-03852787 v1

Modeling of 1D confinement in FD-SOI trigate nanowires at deep cryogenic temperatures

E. Catapano , M. Cassé , F. Gaillard , Tristan Meunier , M. Vinet et al.
Solid-State Electronics, 2022, 198, pp.108466. ⟨10.1016/j.sse.2022.108466⟩
Article dans une revue hal-04560563 v1
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Comprehensive Kubo-Greenwood modelling of FDSOI MOS devices down to deep cryogenic temperatures

Francesco Serra Di Santa Maria , Lauriane Contamin , Mikaël Cassé , Christoforos Theodorou , Francis Balestra et al.
Solid-State Electronics, 2022, 192, pp.108271. ⟨10.1016/j.sse.2022.108271⟩
Article dans une revue hal-04246049 v1

Calculation of the mobility in Al2O3/GaN electron channel: Effect of p-doping and comparison with experiments

Bledion Rrustemi , François Triozon , Marie-Anne Jaud , William Vandendaele , Gérard Ghibaudo
Solid-State Electronics, 2022, 198, pp.108470. ⟨10.1016/j.sse.2022.108470⟩
Article dans une revue cea-04921920 v1

Modeling and simulations of FDSOI five-gate qubit MOS devices down to deep cryogenic temperatures

E. Catapano , A. Aprà , M. Cassé , F. Gaillard , S. de Franceschi et al.
Solid-State Electronics, 2022, 193, pp.108291. ⟨10.1016/j.sse.2022.108291⟩
Article dans une revue hal-03974993 v1
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Detailed electrical characterization of 200mm CMOS compatible GaN/Si HEMTs down to deep cryogenic temperatures

Donghyun Kim , Christoforos Theodorou , A. Chanuel , Y. Gobil , M. Charles et al.
Solid-State Electronics, 2022, 197, pp.108448. ⟨10.1016/j.sse.2022.108448⟩
Article dans une revue hal-03769945 v1
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Threshold voltage of p-type triple-gate junctionless transistors

T.A. Oproglidis , D.H. Tassis , A. Tsormpatzoglou , T.A. Karatsori , Christoforos Theodorou et al.
Solid-State Electronics, 2022, 197, pp.108451. ⟨10.1016/j.sse.2022.108451⟩
Article dans une revue hal-04305155 v1
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Channel-Width-Dependent Mobility Degradation in Bulk Conduction Regime of Tri-Gate Junctionless Transistors

Dae-Young Jeon , Mireille Mouis , Sylvain Barraud , Gerard Ghibaudo
IEEE Transactions on Electron Devices, 2022, 69 (6), pp.3037-3041. ⟨10.1109/TED.2022.3172056⟩
Article dans une revue hal-03697387 v1
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Model Implementation of Lorentzian Spectra for Circuit Noise Simulations in the Frequency Domain

Angeliki Tataridou , Gerard Ghibaudo , Christoforos Theodorou
IEEE Journal of the Electron Devices Society, 2022, 10, pp.611-619. ⟨10.1109/JEDS.2022.3178352⟩
Article dans une revue hal-03762363 v1

The Core-Shell Junctionless MOSFET

Sorin Cristoloveanu, , Gérard Ghibaudo
Solid-State Electronics, 2022, pp.108567. ⟨10.1016/j.sse.2022.108567⟩
Article dans une revue hal-03897336 v1

Influence of substrate biasing on structural, chemical and electrical properties of Al 2 O 3 thin films deposited by PEALD

S Boubenia , G Lefevre , M Legallais , S Labau , F Bassani et al.
Semiconductor Science and Technology, 2022, 37 (6), pp.065001. ⟨10.1088/1361-6641/ac6287⟩
Article dans une revue hal-03867566 v1

Origin of the Out-of-Equilibrium Body Potential In Silicon on Insulator Devices With Metal Contacts

M. Alepidis , G. Ghibaudo , Maryline Bawedin , Irina Ionica
IEEE Electron Device Letters, 2021, 42 (12), pp.1834-1837. ⟨10.1109/LED.2021.3122472⟩
Article dans une revue hal-04742996 v1

Impact of hot carrier aging on the 1/f and random telegraph noise of short-channel triple-gate junctionless MOSFETs

Theodoros Oproglidis , Theano Karatsori , Christoforos Theodorou , Andreas Tsormpatzoglou , Sylvain Barraud et al.
IEEE Transactions on Device and Materials Reliability, 2021, 21 (3), pp.348-353. ⟨10.1109/TDMR.2021.3094510⟩
Article dans une revue hal-03334750 v1
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Lambert-W Function-based Parameter Extraction for FDSOI MOSFETs Down to Deep Cryogenic Temperatures

F. Serra Di Santa Maria , L. Contamin , B. Cardoso Paz , M. Cassé , Christoforos Theodorou et al.
Solid-State Electronics, 2021, 186, pp.108175. ⟨10.1016/j.sse.2021.108175⟩
Article dans une revue hal-03368225 v1
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Statistical and electrical modeling of FDSOI four-gate qubit MOS devices at room temperature

Edoardo Catapano , Gerard Ghibaudo , Mikael Casse , Tadeu Mota Frutuoso , Bruna Cardoso Paz et al.
IEEE Journal of the Electron Devices Society, 2021, 9, pp.582-590. ⟨10.1109/JEDS.2021.3082201⟩
Article dans une revue hal-03455220 v1
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Front and back channels coupling and transport on 28 nm FD-SOI MOSFETs down to liquid-He temperature

Bruna Cardoso Paz , Mikaël Cassé , Sebastien Haendler , Andre Juge , Emmanuel Vincent et al.
Solid-State Electronics, 2021, 186, pp.108071. ⟨10.1016/j.sse.2021.108071⟩
Article dans une revue hal-03975016 v1
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Poisson-Schrödinger simulation and analytical modeling of inversion charge in FDSOI MOSFET down to 0 K – Towards compact modeling for cryo CMOS application

M. Aouad , T. Poiroux , S. Martinie , F. Triozon , M. Vinet et al.
Solid-State Electronics, 2021, 186, pp.108126. ⟨10.1016/j.sse.2021.108126⟩
Article dans une revue cea-04952484 v1
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On the diffusion current in a MOSFET operated down to deep cryogenic temperatures

Gérard Ghibaudo , M. Aouad , M. Casse , T. Poiroux , Christoforos Theodorou
Solid-State Electronics, 2021, 176, pp.107949. ⟨10.1016/j.sse.2020.107949⟩
Article dans une revue hal-03260956 v1

Investigation on interface charges in SiN/AlxGa1−xN/GaN heterostructures by analyzing the gate-to-channel capacitance and the drain current behaviors

Bledion Rrustemi , Marie-Anne Jaud , François Triozon , Clémentine Piotrowicz , William Vandendaele et al.
Journal of Applied Physics, 2021, 130, pp.105704. ⟨10.1063/5.0058019⟩
Article dans une revue cea-04822316 v1
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Accurate statistical extraction of AlGaN/GaN HEMT device parameters using the Y-function

R. Kom Kammeugne , C. Leroux , J. Cluzel , L. Vauche , C. Le Royer et al.
Solid-State Electronics, 2021, 184, pp.108078. ⟨10.1016/j.sse.2021.108078⟩
Article dans une revue cea-03250807 v1
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New Compact Modeling Solutions for Organic and Amorphous Oxide TFTs

Benjamin Iniguez , Arokia Nathan , Alexander Kloes , Yvan Bonnassieux , Krunoslav Romanjek et al.
IEEE Journal of the Electron Devices Society, 2021, 9, pp.911-932. ⟨10.1109/JEDS.2021.3106836⟩
Article dans une revue hal-03325532 v1

Influence of carbon on pBTI degradation in GaN-on-Si E-mode MOSc-HEMT

A. Viey , W. Vandendaele , M.-A. Jaud , L. Gerrer , X. Garros et al.
IEEE Transactions on Electron Devices, 2021, 68 (4), pp.2017-2024. ⟨10.1109/TED.2021.3050127⟩
Article dans une revue cea-04918499 v1

Intrinsic Mechanism of Mobility Collapse in Short MOSFETs

Sorin Cristoloveanu, , Gerard Ghibaudo
IEEE Transactions on Electron Devices, 2021, 68 (10), pp.5090-5094. ⟨10.1109/TED.2021.3105083⟩
Article dans une revue hal-03353319 v1
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Impact of channel length on the operation of junctionless transistors with substrate biasing

Dae-Young Jeon , Mireille Mouis , Sylvain Barraud , Gérard Ghibaudo
IEEE Transactions on Electron Devices, 2021, 68 (6), pp.3070-3073. ⟨10.1109/TED.2021.3069936⟩
Article dans une revue hal-03194757 v1
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Precise Extraction of Charge Carrier Mobility for Organic Transistors

Yong Xu , Yun Li , Songlin Li , Francis Balestra , Gérard Ghibaudo et al.
Advanced Functional Materials, 2020, Emerging Thin‐Film Transistor Technologies and Applications, 30 (20), pp.1904508. ⟨10.1002/adfm.201904508⟩
Article dans une revue hal-02998279 v1

Drain current local variability analysis in nanoscale junctionless FinFETs utilizing a compact model

T.A. Oproglidis , D.H. Tassis , A. Tsormpatzoglou , G. Ghibaudo , C.A. Dimitriadis
Solid-State Electronics, 2020, 170, pp.107835. ⟨10.1016/j.sse.2020.107835⟩
Article dans une revue hal-02991445 v1

Parameter Extraction and Compact Modeling of OTFTs From 150 K to 350 K

Harold Cortes-Ordonez , C. Haddad , Krunoslav Romanjek , Xavier Mescot , Gérard Ghibaudo et al.
IEEE Transactions on Electron Devices, 2020, pp.1-8. ⟨10.1109/TED.2020.3032082⟩
Article dans une revue hal-02991438 v1

A New Direct Measurement Method of Time Dependent Dielectric Breakdown at High Frequency

Melissa Arabi , Xavier Garros , Jacques Cluzel , Mustapha Rafik , Xavier Federspiel et al.
IEEE Electron Device Letters, 2020, 41 (10), pp.1460-1463. ⟨10.1109/LED.2020.3016383⟩
Article dans une revue hal-02961016 v1
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(Invited) Second Harmonic Generation: A Powerful Non-Destructive Characterization Technique for Dielectric-on-Semiconductor Interfaces

Irina Ionica , Dimitrios Damianos , Anne Kaminski-Cachopo , Danièle Blanc-Pelissier , Gérard Ghibaudo et al.
ECS Transactions, 2020, 97 (1), pp.119-130. ⟨10.1149/09701.0119ecst⟩
Article dans une revue hal-02861584 v1
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Controlling the effective channel thickness of junctionless transistors by substrate bias

Dae-Young Jeon , Mireille Mouis , Sylvain Barraud , Gérard Ghibaudo
IEEE Transactions on Electron Devices, 2020, 67 (11), pp.4736 - 4740. ⟨10.1109/TED.2020.3020284⟩
Article dans une revue hal-02963340 v1
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Effect of Gate Structure on the Trapping Behavior of GaN Junctionless FinFETs

Ki-Sik Im , Sung Jin An , Christoforos Theodorou , Gérard Ghibaudo , Sorin Cristoloveanu, et al.
IEEE Electron Device Letters, 2020, 41 (6), pp.832-835. ⟨10.1109/LED.2020.2991164⟩
Article dans une revue hal-02969750 v1

A2RAM compact modeling: From DC to 1T-DRAM memory operation

F. Tcheme Wakam , J. Lacord , M. Bawedin , S. Martinie , S. Cristoloveanu et al.
Solid-State Electronics, 2020, 168, pp.107731. ⟨10.1016/j.sse.2019.107731⟩
Article dans une revue hal-02991446 v1
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Improvement of AlN Film Quality Using Plasma Enhanced Atomic Layer Deposition with Substrate Biasing

Maxime Legallais , Hussein Mehdi , Sylvain David , Franck Bassani , Sébastien Labau et al.
ACS Applied Materials & Interfaces, 2020, 12 (35), pp.39870-39880. ⟨10.1021/acsami.0c10515⟩
Article dans une revue hal-03030507 v1

Evidence of 2D intersubband scattering in thin film fully depleted silicon-on-insulator transistors operating at 4.2 K

L. Le Guevel , G. Billiot , Bruna Cardoso Paz , M. Tagliaferri , Silvano de Franceschi et al.
Applied Physics Letters, 2020, 116 (24), pp.243502. ⟨10.1063/5.0007100⟩
Article dans une revue hal-03541768 v1
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Channel width dependent subthreshold operation of tri-gate junctionless transistors

Dae-Young Jeon , Mireille Mouis , Sylvain Barraud , Gérard Ghibaudo
Solid-State Electronics, 2020, 171, pp.107860. ⟨10.1016/j.sse.2020.107860⟩
Article dans une revue hal-02922783 v1
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On the modelling of temperature dependence of subthreshold swing in MOSFETs down to cryogenic temperature

Gérard Ghibaudo , Mohamed Aouad , Mikaël Cassé , Sebastien Martinie , Francis Balestra et al.
Solid-State Electronics, 2020, ⟨10.1016/j.sse.2020.107820⟩
Article dans une revue hal-03368147 v1

Cryogenic Operation of Thin-Film FDSOI nMOS Transistors: The Effect of Back Bias on Drain Current and Transconductance

M. Casse , B. Cardoso Paz , G. Ghibaudo , T. Poiroux , S. Barraud et al.
IEEE Transactions on Electron Devices, 2020, 67 (11), pp.4636-4640. ⟨10.1109/TED.2020.3022607⟩
Article dans une revue hal-02991460 v1

Modelling and analysis of gate leakage current and its wafer level variability in advanced FD-SOI MOSFETs

Krishna Pradeep , Thierry Poiroux , Patrick Scheer , Andre Juge , Gérard Ghibaudo
Solid-State Electronics, 2020, 163, pp.107643. ⟨10.1016/j.sse.2019.107643⟩
Article dans une revue hal-02321948 v1
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Performance and Low-Frequency Noise of 22-nm FDSOI Down to 4.2 K for Cryogenic Applications

Bruna Cardoso Paz , Mikaël Cassé , Christoforos Theodorou , Gérard Ghibaudo , Thorsten Kammler et al.
IEEE Transactions on Electron Devices, 2020, 67 (11), pp.4563-4567. ⟨10.1109/TED.2020.3021999⟩
Article dans une revue hal-02969741 v1
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Analysis of the Role of Inter-Nanowire Junctions on Current Percolation Effects in Silicon Nanonet Field-Effect Transistors

T. Cazimajou , M. Mouis , M. Legallais , T.T.T. Nguyen , C. Ternon et al.
Solid-State Electronics, 2020, pp.107725. ⟨10.1016/j.sse.2019.107725⟩
Article dans une revue hal-02380107 v1

In-wafer variability in FD-SOI MOSFETs: detailed analysis and statistical modelling

Krishna Pradeep , Patrick Scheer , Thierry Poiroux , André Juge , Gérard Ghibaudo
Semiconductor Science and Technology, 2020, 35 (5), pp.055023. ⟨10.1088/1361-6641/ab7ab1⟩
Article dans une revue cea-04947546 v1
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Effects of Contact Potential and Sidewall Surface Plane on the Performance of GaN Vertical Nanowire MOSFETs for Low-Voltage Operation

Dong-Hyeok Son , Terirama Thingujam , Jeong-Gil Kim , Dae-Hyun Kim , In Man Kang et al.
IEEE Transactions on Electron Devices, 2020, 67 (4), pp.1547-1552. ⟨10.1109/TED.2020.2975599⟩
Article dans une revue hal-02969751 v1
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Impact of Hot Carrier Aging on the Performance of Triple-Gate Junctionless MOSFETs

Theodoros Oproglidis , Theano Karatsori , Christoforos Theodorou , Andreas Tsormpatzoglou , Sylvain Barraud et al.
IEEE Transactions on Electron Devices, 2020, 67 (2), pp.424-429. ⟨10.1109/TED.2019.2958457⟩
Article dans une revue hal-02461975 v1
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A Method for Series-Resistance-Immune Extraction of Low-Frequency Noise Parameters in Nanoscale MOSFETs

Angeliki Tataridou , Gerard Ghibaudo , Christoforos Theodorou
IEEE Transactions on Electron Devices, 2020, 67 (11), pp.4568-4572. ⟨10.1109/TED.2020.3026612⟩
Article dans une revue hal-03260917 v1

Analysis of MIS-HEMT Device Edge Behavior for GaN Technology Using New Differential Method

R. Kom Kammeugne , C. Leroux , J. Cluzel , L. Vauche , C. Le Royer et al.
IEEE Transactions on Electron Devices, 2020, 67 (11), pp.4649-4653. ⟨10.1109/TED.2020.3015466⟩
Article dans une revue cea-02972351 v1

Analysis of the Electrical Properties of Different HgCdTe Passivations for Infrared Detectors

L. Mangin , F. Rochette , C. Lobre , P. Ballet , P. Duvaut et al.
Journal of Electronic Materials, 2019, ⟨10.1007/s11664-019-07253-z⟩
Article dans une revue hal-02136323 v1
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Reliable Mobility Evaluation of Organic Field-Effect Transistors with Different Contact Metals

Fanming Huang , Ao Liu , Huihui Zhu , Yong Xu , Francis Balestra et al.
IEEE Electron Device Letters, 2019, 40 (4), pp.605 - 608. ⟨10.1109/LED.2019.2901315⟩
Article dans une revue hal-02050199 v1
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Doping profile extraction in thin SOI films: Application to A2RAM

F. Tcheme Wakam , J. Lacord , M. Bawedin , S. Martinie , S. Cristoloveanu et al.
Solid-State Electronics, 2019, 159, pp.3-11. ⟨10.1016/j.sse.2019.03.038⟩
Article dans une revue hal-02321935 v1

Electrical characterization of advanced FDSOI CMOS devices

Gérard Ghibaudo
Composants nanoélectroniques, 2019, 2 (1), ⟨10.21494/ISTE.OP.2018.0304⟩
Article dans une revue hal-02010907 v1
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New prospects on high on-current and steep subthreshold slope for innovative Tunnel FET architectures

C. Diaz Llorente , J.-P. Colinge , S. Martinie , S. Cristoloveanu , J. Wan et al.
Solid-State Electronics, 2019, 159, pp.26-37. ⟨10.1016/j.sse.2019.03.046⟩
Article dans une revue hal-02321885 v1

New Insights on device level TDDB at GHz speed in advanced CMOS nodes

M. Arabi , X. Federspiel , F. Cacho , M. Rafik , A.-P. Nguyen et al.
IEEE Transactions on Device and Materials Reliability, 2019, pp.1-1. ⟨10.1109/TDMR.2019.2914362⟩
Article dans une revue hal-02118352 v1

Charge Pumping in Ultrathin SOI Tunnel FETs: Impact of Back-Gate Voltage

Carlos Diaz Llorente , Christoforos Theodorou , Jean-Pierre Colinge , Sorin Cristoloveanu , Sébastien Martinie et al.
ECS Transactions, 2019, 89 (3), pp.111-120. ⟨10.1149/08903.0111ecst⟩
Article dans une revue hal-02415983 v1

Endurance Statistical Behavior of Resistive Memories Based on Experimental and Theoretical Investigation

Diego Alfaro Robayo , Gilbert Sassine , Quentin Rafhay , Gérard Ghibaudo , Gabriel Molas et al.
IEEE Transactions on Electron Devices, 2019, pp.1-8. ⟨10.1109/TED.2019.2911661⟩
Article dans une revue hal-02126884 v1

Impact of Wet Treatments on the Electrical Performance of Ge 0.9 Sn 0.1 -Based p-MOS Capacitors

Mohamed Aymen Mahjoub , Thibault Haffner , Sébastien Labau , Etienne Eustache , Joris Aubin et al.
ACS Applied Electronic Materials, 2019, 1 (2), pp.260-268. ⟨10.1021/acsaelm.8b00099⟩
Article dans une revue hal-02051071 v1
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Characterization and modeling of 2DEG mobility in AlGaN/AlN/GaN MIS-HEMT

I. Nifa , C. Leroux , A. Torrès , M. Charles , G. Reimbold et al.
Microelectronic Engineering, 2019, 215, pp.110976. ⟨10.1016/j.mee.2019.05.003⟩
Article dans une revue hal-02145457 v1

Analytical expression of top surface charge sensitivity in fully depleted semiconductor on insulator MOS transistor

G. Ghibaudo , G. Pananakakis
Composants nanoélectroniques, 2019, 2 (1), ⟨10.21494/ISTE.OP.2019.0347⟩
Article dans une revue hal-02067076 v1

Impact of CMOS TiN metal gate process on microstructure and its correlation with electrical properties

Pushpendra Kumar , Florian Domengie , Charles Leroux , Patrice Gergaud , G. Ghibaudo
MRS Advances, 2019, pp.1-7. ⟨10.1557/adv.2019.77⟩
Article dans une revue hal-02051062 v1

Temperature dependence of TDDB at high frequency in 28FDSOI

M. Arabi , X. Federspiel , F. Cacho , M. Rafik , A.-P. Nguyen et al.
Microelectronics Reliability, 2019, 100-101, pp.113422. ⟨10.1016/j.microrel.2019.113422⟩
Article dans une revue hal-02361447 v1

Low-Frequency Noise Characteristics of GaN Nanowire Gate-All-Around Transistors With/Without 2-DEG Channel

Ki-Sik Im , M. Siva Pratap Reddy , Raphaël Caulmilone , Christoforos Theodorou , Gérard Ghibaudo et al.
IEEE Transactions on Electron Devices, 2019, 66 (3), pp.1243 - 1248. ⟨10.1109/TED.2019.2894806⟩
Article dans une revue hal-02047570 v1

New Concept of Differential Effective Mobility in MOS Transistors

K. Bennamane , G. Ghibaudo
Active and Passive Electronic Components, 2019, 2019, pp.5716230. ⟨10.1155/2019/5716230⟩
Article dans une revue hal-02059162 v1

New perspectives in defect centric model for NBTI reliability

D. Nouguier , G. Ghibaudo , X. Federspiel , M. Rafik , D. Roy
Microelectronics Reliability, 2019, 98, pp.119-123. ⟨10.1016/j.microrel.2019.05.010⟩
Article dans une revue hal-02136328 v1

On the cumulative distribution function of the defect centric model for BTI reliability

D. Nouguier , G. Pananakakis , X. Federspiel , M. Rafik , D. Roy et al.
Microelectronics Reliability, 2019, 92, pp.168-171. ⟨10.1016/j.microrel.2018.12.003⟩
Article dans une revue hal-01953979 v1

Bottom-up fabrication of InAs-on-nothing MOSFET using selective area molecular beam epitaxy

Matej Pastorek , Aurélien Olivier , Yoann Lechaux , Nicolas Wichmann , Theano Karatsori et al.
Nanotechnology, 2019, 30 (3), pp.035301. ⟨10.1088/1361-6528/aaebbd⟩
Article dans une revue hal-01955057 v1

Impact of contact and channel resistance on the frequency-dependent capacitance and conductance of pseudo-MOSFET

S. Sato , G. Ghibaudo , L. Benea , I. Ionica , Y. Omura et al.
Solid-State Electronics, 2019, 159, pp.197-203. ⟨10.1016/j.sse.2019.03.059⟩
Article dans une revue hal-02321909 v1
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Novel On-Resistance based Methodology for MOSFET Electrical Characterization

T.A. Karatsori , K. Bennamane , Gérard Ghibaudo
Solid-State Electronics, 2019, pp.107722. ⟨10.1016/j.sse.2019.107722⟩
Article dans une revue hal-02379974 v1

Self-Heating Effect in FDSOI Transistors Down to Cryogenic Operation at 4.2 K

K. Triantopoulos , M. Cassé , S. Barraud , S. Haendler , E. Vincent et al.
IEEE Transactions on Electron Devices, 2019, pp.1-8. ⟨10.1109/TED.2019.2919924⟩
Article dans une revue hal-02161716 v1

1/ f noise analysis in high mobility polymer-based OTFTs with non-fluorinated dielectric

Wondwosen Muhea , K. Romanjek , Xavier Mescot , C. Theodorou , M. Charbonneau et al.
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Upgrade of Drain Current Compact Model for Nanoscale Triple-Gate Junctionless Transistors to Continuous and Symmetric

T. Oproglidis , A. Tsormpatzoglou , C. Theodorou , T. Karatsori , G. Ghibaudo et al.
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New NBTI models for degradation and relaxation kinetics valid over extended temperature and stress/recovery ranges

D. Nouguier , X. Federspiel , G. Ghibaudo , M. Rafik , D. Roy
Microelectronics Reliability, 2018, 87, pp.106-112. ⟨10.1016/j.microrel.2018.04.009⟩
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Essential Effects on the Mobility Extraction Reliability for Organic Transistors

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Advanced Functional Materials, 2018, 28 (42), pp.1803907. ⟨10.1002/adfm.201803907⟩
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Origin of Low-Frequency Noise in Triple-Gate Junctionless n-MOSFETs

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Static and low frequency noise characterization of ultra-thin body InAs MOSFETs

T.A. Karatsori , M. Pastorek , C.G. Theodorou , A. Fadjie , Nicolas Wichmann et al.
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Analytical expressions for subthreshold swing in FDSOI MOS structures

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Solid-State Electronics, 2018, 149, pp.57-61. ⟨10.1016/j.sse.2018.08.011⟩
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Study of forward AC stress degradation of GaN-on-Si Schottky diodes

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Field-effect passivation of Si by ALD-Al2O3: second harmonic generation monitoring and simulation

D Damianos , G. Vitrant , A. Kaminski-Cachopo , D. Blanc-Pélissier , G. Ghibaudo et al.
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Series resistance in different operation regime of junctionless transistors

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Solid-State Electronics, 2018, 141, pp.92-95. ⟨10.1016/j.sse.2017.12.013⟩
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Determination of well flat band condition in thin film FDSOI transistors using C-V measurement for accurate parameter extraction

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Solid-State Electronics, 2018, 139, pp.88-93. ⟨10.1016/j.sse.2017.10.038⟩
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Analysis and modeling of wafer-level process variability in 28 nm FD-SOI using split C-V measurements

Krishna Pradeep , Thierry Poiroux , Patrick Scheer , Andre Juge , Gilles Gouget et al.
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Lambert W-function based modelling of P-OTFTs and application to low temperature measurements

Clara Haddad , Stéphanie Jacob , Micaël Charbonneau , Amélie Revaux , Gérard Ghibaudo
Organic Electronics, 2018, 62, pp.610-614. ⟨10.1016/j.orgel.2018.06.037⟩
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Compact modeling of nanoscale triple-gate junctionless transistors covering drift-diffusion to quasi-ballistic carrier transport

T.A. Oproglidis , T.A. Karatsori , S. Barraud , G. Ghibaudo , C.A. Dimitriadis
Solid-State Electronics, 2018, 142, pp.25-30. ⟨10.1016/j.sse.2018.01.005⟩
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Electrical characteristics of silicon percolating nanonet-based field effect transistors in the presence of dispersion

T. Cazimajou , M. Legallais , M. Mouis , C. Ternon , B. Salem et al.
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Characterization of 2DEG in AlGaN/GaN heterostructure by Hall effect

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Analytical Drain Current Compact Model in the Depletion Operation Region of Short-Channel Triple-Gate Junctionless Transistors

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T.A. Oproglidis , T.A. Karatsori , S. Barraud , G. Ghibaudo , C.A. Dimitriadis
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1/f-Noise in AlGaN/GaN Nanowire Omega-FinFETs

Sindhuri Vodapally , Young In Jang , In Man Kang , In-Tak Cho , Jong-Ho Lee et al.
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Comparison for 1/ f Noise Characteristics of AlGaN/GaN FinFET and Planar MISHFET

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Physically-based evaluation of aging contributions in HC/FN-programmed 40 nm NOR Flash technology

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All Operation Region Characterization and Modeling of Drain and Gate Current Mismatch in 14-nm Fully Depleted SOI MOSFETs

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Exploring the Charge Transport in Conjugated Polymers

Yong Xu , Huabin Sun , Wenwu Li , Yen-Fu Li , Francis Balestra et al.
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Reliable gate stack and substrate parameter extraction based on C-V measurements for 14nm node FDSOI technology

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T.A. Karatsori , C.G. Theodorou , S. Haendler , G. Ghibaudo
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Physics and performance of nanoscale semiconductor devices at cryogenic temperatures

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Investigation of Cycle-to-Cycle Variability in HfO 2 -Based OxRAM

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Characterization and modeling of drain current local variability in 28 and 14 nm FDSOI nMOSFETs

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Hot-carrier degradation model for nanoscale ultra-thin body ultra-thin box SOI MOSFETs suitable for circuit simulators

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Hot carrier degradation modeling of short-channel n-FinFETs suitable for circuit simulators

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Low-frequency noise in bare SOI wafers: Experiments and model

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Microscopic Analysis of Erase-Induced Degradation in 40 nm NOR Flash Technology

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Fabrication and electrical characterization of homo- and hetero-structure Si/SiGe nanowire Tunnel Field Effect Transistor grown by vapor–liquid–solid mechanism

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New Y -function based MOSFET parameter extraction method from weak to strong inversion range

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HfO2-Based OxRAM Devices as Synapses for Convolutional Neural Networks

Daniele Garbin , Elisa Vianello , Olivier Bichler , Quentin Rafhay , Christian Gamrat et al.
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Split-Capacitance and Conductance-Frequency Characteristics of SOI Wafers in Pseudo-MOSFET Configuration

Luca Pirro , Amer Diab , Irina Ionica , Gérard Ghibaudo , Lorenzo Faraone et al.
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G. Hiblot , Q. Rafhay , F. Boeuf , G. Ghibaudo
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Impact of Source–Drain Series Resistance on Drain Current Mismatch in Advanced Fully Depleted SOI n-MOSFETs

E. Ioannidis , C. Theodorou , S. Haendler , E. Josse , C. Dimitriadis et al.
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Refined Conformal Mapping Model for MOSFET Parasitic Capacitances Based on Elliptic Integrals

Gaspard Hiblot , Quentin Rafhay , Frédéric Boeuf , Gérard Ghibaudo
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Effective work function modulation by $sacrificial$ gate aluminum diffusion on HfON-based 14nm NMOS devices

C. Suarez-Segovia , C. Leroux , P. Caubet , F. Domengie , G. Reimbold et al.
Microelectronic Engineering, 2015, 147, pp.113-116. ⟨10.1016/j.mee.2015.04.062⟩
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Physically-based extraction methodology for accurate MOSFET degradation assessment

Giulio Torrente , Jean Coignus , Sophie Renard , Alexandre Vernhet , Gilles Reimbold et al.
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Full gate voltage range Lambert-function based methodology for FDSOI MOSFET parameter extraction

T.A. Karatsori , C.G. Theodorou , E.G. Ioannidis , S. Haendler , E. Josse et al.
Solid-State Electronics, 2015, 111, pp.123-128. ⟨10.1016/j.sse.2015.06.002⟩
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Compact Model for Inversion Charge in III–V Bulk MOSFET Including Non-Parabolicity

Gaspard Hiblot , Gabriel Mugny , Quentin Rafhay , Frédéric Boeuf , Gérard Ghibaudo
IEEE Transactions on Nanotechnology, 2015, 14 (4), pp.768-775. ⟨10.1109/TNANO.2015.2444653⟩
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Investigation of Forming, SET, and Data Retention of Conductive-Bridge Random-Access Memory for Stack Optimization

Jeremy Guy , Gabriel Molas , Philippe Blaise , Mathieu Bernard , Anne Roule et al.
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In depth characterization of electron transport in 14nm FD-SOI CMOS devices

Minju Shin , Ming Shi , Mireille Mouis , Antoine Cros , Emmanuel Josse et al.
Solid-State Electronics, 2015, 112, pp.13-18. ⟨10.1016/j.sse.2015.02.012⟩
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Low temperature characterization of mobility in 14nm FD-SOI CMOS devices under interface coupling conditions

Minju Shin , Ming Shi , Mireille Mouis , Antoine Cros , Emmanuel Josse et al.
Solid-State Electronics, 2015, 108, pp.30-35. ⟨10.1016/j.sse.2014.12.013⟩
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Modeling of low-frequency noise in advanced CMOS devices

F. Balestra , G. Ghibaudo , J. Jomaah
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2015, 28 (6), pp.613-627. ⟨10.1002/jnm.2052⟩
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Non-Arrhenius conduction due to the interface-trap-induced disorder in X-doped amorphous In-X-Zn oxides thin-film transistors

Mohammed Benwadih , Jan Chroboczek , Gérard Ghibaudo , Romain Coppard , Dominique Vuillaume
Journal of Applied Physics, 2015, 117 (5), pp.055707. ⟨10.1063/1.4907681⟩
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On the Origin of Improved Charge Transport in Double-Gate In–Ga–Zn–O Thin-Film Transistors: A Low-Frequency Noise Perspective

Yong Xu , Chuan Liu , Paul Seyram K. Amegadez , Gi-Seong Ryu , Huaixin Wei et al.
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Compact model of short-channel effects for FDSOI devices including the influence of back-bias and fringing fields for Si and III–V technology

G. Hiblot , J. Lacord , M. Akbal , Q. Rafhay , F. Boeuf et al.
Solid-State Electronics, 2015, 107, pp.1-7. ⟨10.1016/j.sse.2015.02.001⟩
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Assessment of technological and geometrical device parameters by low-frequency noise investigation in SOI omega-gate nanowire NMOS FETs

M. Koyama , M. Cassé , S. Barraud , G. Ghibaudo , H. Iwai et al.
Solid-State Electronics, 2015, 108, pp.36-41. ⟨10.1016/j.sse.2014.12.010⟩
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Modeling the Dynamic Variability Induced by Charged Traps in a Bilayer Gate Oxide

Alexandre Subirats , Xavier Garros , Joanna El Husseini , Emmanuel Vincent , Gilles Reimbold et al.
IEEE Transactions on Electron Devices, 2015, 62 (2), pp.485-492. ⟨10.1109/TED.2014.2380474⟩
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Drain-Current Flicker Noise Modeling in nMOSFETs From a 14-nm FDSOI Technology

Eleftherios Ioannidis , Christoforos Theodorou , Theano Karatsori , Sebastien Haendler , Charalabos Dimitriadis et al.
IEEE Transactions on Electron Devices, 2015, 62 (5), pp.1574-1579. ⟨10.1109/TED.2015.2411678⟩
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Accurate Boundary Condition for Short-Channel Effect Compact Modeling in MOS Devices

Gaspard Hiblot , Tapas Dutta , Quentin Rafhay , Joris Lacord , Madjid Akbal et al.
IEEE Transactions on Electron Devices, 2015, 62 (1), pp.28-35. ⟨10.1109/TED.2014.2368395⟩
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Experimental and Theoretical Investigation of Magnetoresistance From Linear Regime to Saturation in 14-nm FD-SOI MOS Devices

Minju Shin , Ming Shi , Mireille Mouis , Antoine Cros , Emmanuel Josse et al.
IEEE Transactions on Electron Devices, 2015, 62 (1), pp.3-8. ⟨10.1109/TED.2014.2366170⟩
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Fabrication and characterization of silicon nanowire p-i-n MOS gated diode for use as p-type tunnel FET

V. Brouzet , B. Salem , P. Periwal , G. Rosaz , T. Baron et al.
Applied physics. A, Materials science & processing, 2015, 121 (3), pp.1285-1290. ⟨10.1007/s00339-015-9507-3⟩
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Magnetoresistance mobility characterization in advanced FD-SOI n-MOSFETs

Minju Shin , Ming Shi , Mireille Mouis , Antoine Cros , Emmanuel Josse et al.
Solid-State Electronics, 2015, 103, pp.229-235. ⟨10.1016/j.sse.2014.07.007⟩
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A comparative mismatch study of the 20nm Gate-Last and 28nm Gate-First bulk CMOS technologies

Lama Rahhal , Aurélie Bajolet , Jean-Philippe Manceau , Julien Rosa , Stéphane Ricq et al.
Solid-State Electronics, 2015, 108, pp.53-60. ⟨10.1016/j.sse.2014.12.006⟩
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Analytical Compact Model for Lightly Doped Nanoscale Ultrathin-Body and Box SOI MOSFETs With Back-Gate Control

Theano Karatsori , Andreas Tsormpatzoglou , Christoforos Theodorou , Eleftherios Ioannidis , Sebastien Haendler et al.
IEEE Transactions on Electron Devices, 2015, 62 (10), pp.3117-3124. ⟨10.1109/TED.2015.2464076⟩
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Analytical Model for the Inversion Gate Capacitance of DG and UTBB MOSFETs at the Quantum Capacitance Limit

Gaspard Hiblot , Quentin Rafhay , Frédéric Boeuf , Gérard Ghibaudo
IEEE Transactions on Electron Devices, 2015, 62 (5), pp.1375-1382. ⟨10.1109/TED.2015.2406116⟩
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Dynamic variability in 14nm FD-SOI MOSFETs and transient simulation methodology

Christoforos Theodorou , Eleftherios Ioannidis , Sebastien Haendler , Charalabos Dimitriadis , Gérard Ghibaudo
Solid-State Electronics, 2015, 111, pp.100-103. ⟨10.1016/j.sse.2015.06.001⟩
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Extensive study of Bias Temperature Instability in nanowire transistors

A. Laurent , X. Garros , S. Barraud , G. Reimbold , D. Roy et al.
Microelectronic Engineering, 2015, 147, pp.10-14. ⟨10.1016/j.mee.2015.04.028⟩
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Compact modeling of the shift between classical and quantum threshold voltages in a III–V nanowire

G. Hiblot , Q. Rafhay , F. Boeuf , G. Ghibaudo
Solid-State Electronics, 2014, 100, pp.71-78. ⟨10.1016/j.sse.2014.07.001⟩
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Analytical Modeling of Threshold Voltage and Interface Ideality Factor of Nanoscale Ultrathin Body and Buried Oxide SOI MOSFETs With Back Gate Control

Nikolaos Fasarakis , Theano Karatsori , Dimitrios Tassis , Christoforos Theodorou , François Andrieu et al.
IEEE Transactions on Electron Devices, 2014, 61 (4), pp.969-975. ⟨10.1109/TED.2014.2306015⟩
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Erratum: “Evaluating injection and transport properties of organic field-effect transistors by the convergence point in transfer-length method” [Appl. Phys. Lett. 104 , 013301 (2014)]

Chuan Liu , Yong Xu , Gérard Ghibaudo , Xubing Xu , Takeo Minari et al.
Applied Physics Letters, 2014, 104 (7), pp.079902. ⟨10.1063/1.4866287⟩
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Characterization Methodology for MOSFET Local Systematic Variability in Presence of Statistical Variability

Omar Jonani Franco Piliado , Giancarlo Castaneda , Andre Juge , Gérard Ghibaudo
Journal of Low Power Electronics, 2014, 10 (1), pp.127-136. ⟨10.1166/jolpe.2014.1304⟩
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Study of an embedded buried SiGe structure as a mobility booster for fully-depleted SOI MOSFETs at the 10nm node

S. Morvan , F. Andrieu , J.-C. Barbé , G. Ghibaudo
Solid-State Electronics, 2014, 98, pp.50-54. ⟨10.1016/j.sse.2014.04.013⟩
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Impact of trap localization on low-frequency noise in nanoscale device

Jae Woo Lee , Wan Soo Yun , Gérard Ghibaudo
Journal of Applied Physics, 2014, 115 (19), pp.194501. ⟨10.1063/1.4878456⟩
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Evaluating injection and transport properties of organic field-effect transistors by the convergence point in transfer-length method

Chuan Liu , Yong Xu , Gérard Ghibaudo , Xubing Xu , Takeo Minari et al.
Applied Physics Letters, 2014, 104 (1), pp.013301. ⟨10.1063/1.4860958⟩
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Flat-band voltage and low-field mobility analysis of junctionless transistors under low-temperature

Min-Kyu Joo , Mireille Mouis , Dae-Young Jeon , Sylvain Barraud , So Jeong Jeon et al.
Semiconductor Science and Technology, 2014, 29 (4), pp.045024. ⟨10.1088/0268-1242/29/4/045024⟩
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Physics of the frequency response of rectifying organic Schottky diodes

Stephane Altazin , Raphael Clerc , Romain Gwoziecki , Jean-Marie Verilhac , Damien Boudinet et al.
Journal of Applied Physics, 2014, 115, pp.064509. ⟨10.1063/1.4865739⟩
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Separation of surface accumulation and bulk neutral channel in junctionless transistors

Dae-Young Jeon , So Jeon , Mireille Mouis , Min-Kyu Joo , Sylvain Barraud et al.
Applied Physics Letters, 2014, 104 (26), pp.263510. ⟨10.1063/1.4886139⟩
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Impact of dopant species on the interfacial trap density and mobility in amorphous In-X-Zn-O solution-processed thin-film transistors

Mohammed Benwadih , Jan Chroboczek , Gérard Ghibaudo , Romain Coppard , Dominique Vuillaume
Journal of Applied Physics, 2014, 115 (21), pp.214501. ⟨10.1063/1.4880163⟩
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Low-Frequency Noise Sources in Advanced UTBB FD-SOI MOSFETs

Christoforos Theodorou , Eleftherios Ioannidis , François Andrieu , Thierry Poiroux , Olivier Faynot et al.
IEEE Transactions on Electron Devices, 2014, 61 (4), pp.1161-1167. ⟨10.1109/TED.2014.2307201⟩
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Analytical relationship between subthreshold swing of thermionic and tunnelling currents

G. Hiblot , Quentin Rafhay , F. Boeuf , G. Ghibaudo
Electronics Letters, 2014, 50 (23), pp.1745-1747. ⟨10.1049/el.2014.3206⟩
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Effect of Intertube Junctions on the Thermoelectric Power of Monodispersed Single Walled Carbon Nanotube Networks

Mingxing Piao , Min-Kyu Joo , Junhong Na , Yun-Jeong Kim , Mireille Mouis et al.
Journal of Physical Chemistry C, 2014, 118 (46), pp.26454-26461. ⟨10.1021/jp505682f⟩
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Significant roles of low-temperature post-metallization annealing in solution-processed oxide thin-film transistors

Yong Xu , Chuan Liu , Paul Seyram K. Amegadze , Won-Tae Park , Dang Xuan Xu et al.
Applied Physics Letters, 2014, 105 (13), pp.133505. ⟨10.1063/1.4897003⟩
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MASTAR VA: A predictive and flexible compact model for digital performances evaluation of CMOS technology with conventional CAD tools

Joris Lacord , Gérard Ghibaudo , Frédéric Boeuf
Solid-State Electronics, 2014, 91, pp.137-146. ⟨10.1016/j.sse.2013.10.007⟩
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Compact Modeling of Nanoscale Trapezoidal FinFETs

Nikolaos Fasarakis , Theano Karatsori , Andreas Tsormpatzoglou , Dimitrios Tassis , Konstantinos Papathanasiou et al.
IEEE Transactions on Electron Devices, 2014, 61 (2), pp.324-332. ⟨10.1109/TED.2013.2284503⟩
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(Invited) In Depth Study of Ge Impact on Advanced SiGe PMOS Transistors

A. Soussou , M. Cassé , G. Reimbold , C. Leroux , F. Andrieu et al.
ECS Transactions, 2014, 64 (8), pp.61-68. ⟨10.1149/06408.0061ecst⟩
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Impact of low-frequency noise variability on statistical parameter extraction in ultra-scaled CMOS devices

E. Ioannidis , G. Theodorou , S. Haendler , C.A. Dimitriadis , G. Ghibaudo
Electronics Letters, 2014, 50 (19), pp.1393-1395. ⟨10.1049/el.2014.1837⟩
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Metal evaporation dependent charge injection in organic transistors

Yong Xu , Chuan Liu , Huabin Sun , Francis Balestra , Gérard Ghibaudo et al.
Organic Electronics, 2014, 15 (8), pp.1738-1744. ⟨10.1016/j.orgel.2014.05.006⟩
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Full split C–V method for parameter extraction in ultra thin BOX FDSOI MOS devices

Minju Shin , Ming Shi , Mireille Mouis , Antoine Cros , Emmanuel Josse et al.
Solid-State Electronics, 2014, 99, pp.104-107. ⟨10.1016/j.sse.2014.04.039⟩
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Less mobility degradation induced by transverse electric-field in junctionless transistors

So Jeong Park , Dae-Young Jeon , Laurent Montès , Mireille Mouis , Sylvain Barraud et al.
Applied Physics Letters, 2014, 105 (21), pp.213504. ⟨10.1063/1.4902549⟩
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Evolution of low frequency noise and noise variability through CMOS bulk technology nodes from 0.5μm down to 20nm

E.G. Ioannidis , S. Haendler , C.G. Theodorou , S. Lasserre , C.A. Dimitriadis et al.
Solid-State Electronics, 2014, 95, pp.28-31. ⟨10.1016/j.sse.2014.03.002⟩
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Low-temperature operation of junctionless nanowire transistors: Less surface roughness scattering effects and dominant scattering mechanisms

Dae-Young Jeon , So Jeong Jeon , Mireille Mouis , Sylvain Barraud , Gyu-Tae Kim et al.
Applied Physics Letters, 2014, 105 (26), pp.263505. ⟨10.1063/1.4905366⟩
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Source/drain induced defects in advanced MOSFETs: what device electrical characterization tells

Mireille Mouis , Jae Woo Lee , Daeyoung Jeon , Ming Shi , Minju Shin et al.
Physica Status Solidi C: Current Topics in Solid State Physics, 2014, 11 (1), pp.138-145. ⟨10.1002/pssc.201300317⟩
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Impact of channel width on back biasing effect in tri-gate MOSFET

So Jeong Park , Dae-Young Jeon , Laurent Montès , Sylvain Barraud , Gyu-Tae Kim et al.
Microelectronic Engineering, 2014, 114, pp.91-97. ⟨10.1016/j.mee.2013.09.016⟩
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A Combined Ab Initio and Experimental Study on the Nature of Conductive Filaments in Pt/HfO2/Pt Resistive Random Access Memory

Kan-Hao Xue , Boubacar Traoré , Philippe Blaise , Leonardo Fonseca , Elisa Vianello et al.
IEEE Transactions on Electron Devices, 2014, 61 (5), pp.1394-1402. ⟨10.1109/TED.2014.2312943⟩
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Characterization and modeling of low frequency noise in CMOS inverters

E.G. Ioannidis , S. Haendler , C.A. Dimitriadis , G. Ghibaudo
Solid-State Electronics, 2013, 81, pp.151-156. ⟨10.1016/j.sse.2012.12.001⟩
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Sidewall mobility and series resistance in a multichannel tri-gate MOSFET

S.J. Park , D.Y. Jeon , L. Montes , S. Barraud , G.T. Kim et al.
Semiconductor Science and Technology, 2013, 28 (6), pp.065009. ⟨10.1088/0268-1242/28/6/065009⟩
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Revisited parameter extraction methodology for electrical characterization of junctionless transistors

D.-Y. Jeon , S. J. Park , M. Mouis , M. Berthome , S. Barraud et al.
Solid-State Electronics, 2013, 90, pp.86-93. ⟨10.1016/j.sse.2013.02.047⟩
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Impact Of Single Charge Trapping On The Variability of Ultra-Scaled Planar And Tri-Gate FDSOI MOSFETs: Experiment vs Simulation

A. Subirats , X. Garros , J. El Husseini , C. Le Royer , G. Reimbold et al.
IEEE Transactions on Electron Devices, 2013, 60, pp.2604-2610
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Channel access resistance effects on charge carrier mobility and low-frequency noise in a polymethyl methacrylate passivated SnO2 nanowire field-effect transistors

M.K. Joo , J. Huh , M. Mouis , S.J. Park , D.Y. Jeon et al.
Applied Physics Letters, 2013, 102 (Issue 5), pp.053114. ⟨10.1063/1.4788708⟩
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Unexpected impact of germanium content in SiGe bulk PMOSFETs

C. Diouf , A. Cros , A. Soussou , D. Rideau , S. Haendler et al.
Solid-State Electronics, 2013, 86, pp.45-50. ⟨10.1016/j.sse.2013.04.024⟩
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Mobility coupling effects due to remote Coulomb scattering in thin-film FD-SOI CMOS devices

K. Bennamane , I. Ben Akkez , A. Cros , C. Fenouillet-Beranger , F. Balestra et al.
Electronics Letters, 2013, 49 (7), pp.490-491. ⟨10.1049/el.2012.4150⟩
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A new characterization technique for SOI wafers: Split C(V) in pseudo-MOSFET configuration

A. Diab , C. Fernandez , A. Ohata , N. Rodriguez , I. Ionica et al.
Solid-State Electronics, 2013, 90, pp.127-133. ⟨10.1016/j.sse.2013.02.041⟩
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ANALYTICAL MODELS AND ELECTRICAL CHARACTERISATION OF ADVANCED MOSFETS IN THE QUASI BALLISTIC REGIME

Raphael Clerc , Gérard Ghibaudo
International Journal of High Speed Electronics and Systems, 2013, 22 (1), pp.1350002. ⟨10.1142/S012915641350002X⟩
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Current Conduction Model for Oxide-Based Resistive Random Access Memory Verified by Low Frequency Noise Analysis

Z. Fang , H.Y. Yu , W. J. Fan , G. Ghibaudo , J. Buckley et al.
IEEE Transactions on Electron Devices, 2013, 60 (Issue3), pp.1272-1275. ⟨10.1109/TED.2013.2240457⟩
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Study of carrier transport in strained and unstrained SOI tri-gate and omega-gate silicon nanowire MOSFETs

M. Koyama , M. Casse , R. Coquand , S. Barraud , C. Vizioz et al.
Solid-State Electronics, 2013, 84, pp.46-52. ⟨10.1016/j.sse.2013.02.024⟩
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Impact of Ge proportion on advanced SiGe bulk P-MOSFET matching performances

L. Rahhal , A. Bajolet , C. Diouf , F. Kergomard , J. Rosa et al.
Solid-State Electronics, 2013, 85, pp.15-22. ⟨10.1016/j.sse.2013.03.001⟩
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Grain boundary composition and conduction in HfO2: An ab initio study

K.H. Xue , P. Blaise , L.R.C. Fonseca , G. Molas , E. Vianello et al.
Applied Physics Letters, 2013, 102 (20), pp.201908. ⟨10.1063/1.4807666⟩
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Understanding Ge impact on VT and VFB in Si1-xGex/Si pMOSFETs

A. Soussou , Cédric Leroux , D. Rideau , A. Toffoli , G. Romano et al.
Microelectronic Engineering, 2013, 109, pp.282-285. ⟨10.1016/j.mee.2013.03.008⟩
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Impact of dynamic variability on the operation of CMOS inverter

E.G. Ioannidis , S. Haendler , J.P. Manceau , C.A. Dimitriadis , G. Ghibaudo
Electronics Letters, 2013, 49 (19), pp.214. ⟨10.1049/el.2013.1343⟩
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A new method for the extraction of flat-band voltage and doping concentration in Tri-gate Junctionless Transistors

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Solid-State Electronics, 2013, 81, pp.113-118. ⟨10.1016/j.sse.2012.11.011⟩
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Strain-Enhanced Performance of Si-Nanowire FETs

S. Barraud , R. Coquand , M. Koyamad , D. Cooper , C. Vizioz et al.
ECS Transactions, 2013, 53, pp.125-136
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Static electrical characterization and low frequency noise of a-InHfZnO thin film transistors

S.J. Park , D.-Y. Jeon , S.-E. Ahn , S. Jeon , L. Montes et al.
Thin Solid Films, 2013, 548, pp.560-565. ⟨10.1016/j.tsf.2013.09.024⟩
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RC Model for Frequency Dependence of Split C-V Measurements on Bare SOI Wafers

A. Diab , I. Ionica , G. Ghibaudo , S. Cristoloveanu
IEEE Electron Device Letters, 2013, 34 (6), pp.792-794. ⟨10.1109/LED.2013.2257663⟩
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Gate-last integration on planar FDSOI for low-VTp and low-EOT MOSFETs

S. Morvan , F. Andrieu , Cédric Leroux , X. Garros , M. Casse et al.
Microelectronic Engineering, 2013, 109, pp.306-309. ⟨10.1016/j.mee.2013.03.045⟩
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Effects of channel width variation on electrical characteristics of tri-gate Junctionless Transistors

D.-Y. Jeon , S. J. Park , M. Mouis , S. Barraud , G.-T. Kim et al.
Solid-State Electronics, 2013, 81, pp.58-62. ⟨10.1016/j.sse.2013.01.002⟩
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Origin of the low-frequency noise in n-channel FinFETs

C. G. Theodorou , T. Hoffman , T. Chiarella , G. Ghibaudo , C.A. Dimitriadis
Solid-State Electronics, 2013, 82, pp.21-24. ⟨10.1016/j.sse.2013.01.009⟩
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New parameter extraction method based on split C-V measurements in FDSOI MOSFETs

I. Ben Akkez , A. Cros , C. Fenouillet-Beranger , F. Boeuf , Q. Rafhay et al.
Solid-State Electronics, 2013, 84, pp.142-146. ⟨10.1016/j.sse.2013.02.011⟩
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Y function" method applied to saturation regime: Apparent saturation mobility and saturation velocity extraction

C. Diouf , A. Cros , S. Monfray , J. Mitard , J. Rosa et al.
Solid-State Electronics, 2013, 85, pp.12-14. ⟨10.1016/j.sse.2013.03.007⟩
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Scaling of high-kappa/metal-gate TriGate SOI nanowire transistors down to 10 nm width

R. Coquand , S. Barraud , M. Casse , P. Leroux , C. Vizioz et al.
Solid-State Electronics, 2013, 88, pp.32-36. ⟨10.1016/j.sse.2013.04.006⟩
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Strain-Induced Performance Enhancement of Trigate and Omega-Gate Nanowire FETs Scaled Down to 10-nm Width

R. Coquand , M. Cassé , D. Cooper , V. Maffini-Alvaro , M.-P. Samson et al.
IEEE Transactions on Electron Devices, 2013, 60, pp.727-732. ⟨10.1109/TED.2012.2231684⟩
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Low-temperature electrical characterization of junctionless transistors

Dae-Young Jeon , So Jeong Jeon , Mireille Mouis , Sylvain Barraud , Gyu-Tae Kim et al.
Solid-State Electronics, 2013, 80, pp.135-141
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Back biasing effects in tri-gate junctionless transistors

S.J. Park , D.Y. Jeon , L. Montes , S. Barraud , G.T. Kim et al.
Solid-State Electronics, 2013, 87, pp.74-79. ⟨10.1016/j.sse.2013.06.004⟩
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How small the contacts could be optimal for nanoscale organic transistors?

Y. Xu , C. Liu , W. Scheideler , P. Darmawan , S.L. Li et al.
Organic Electronics, 2013, 14 (7), pp.1797-1804. ⟨10.1016/j.orgel.2013.04.014⟩
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New method for the extraction of bulk channel mobility and flat-band voltage in junctionless transistors

D.Y. Jeon , S.J. Park , M. Mouis , S. Barraud , G.T. Kim et al.
Solid-State Electronics, 2013, 89, pp.139-141. ⟨10.1016/j.sse.2013.08.003⟩
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Study of substrate orientations impact on Ultra Thin Buried Oxide (UTBOX) FDSOI High-K Metal gate technology performances

I. Ben Akkez , C. Fenouillet-Beranger , A. Cros , P. Perreau , S. Haendler et al.
Solid-State Electronics, 2013, 90, pp.134-142. ⟨10.1016/j.sse.2013.02.039⟩
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Materials, Devices and Systems Science, Engineering and Architectures" (Proceedings of ISCDG'2012)

G. Ghibaudo , F. Balestra , S. Deleonibus
Guest Editors, 2013, 63 (1)
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Static and low frequency noise characterization of N-type random network of carbon nanotubes thin film transistors

M.K. Joo , M. Mouis , D.Y. Jeon , G.T. Kim , U.J. Kim et al.
Journ. Appl. Phys., 2013, 114 (15), pp.154503:1-10. ⟨10.1063/1.4825221⟩
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Joule's law for organic transistors exploration: Case of contact resistance

Yong Xu , Chuan Liu , Yun Li , T. Minari , P. Darmawan et al.
Journ. Appl. Phys., 2013, 113 (Issue 6), pp.no. 064507. ⟨10.1063/1.4792066⟩
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Sheet resistance measurement on AlGaN/GaN wafers and dispersion study

J. Lehmann , Cédric Leroux , M. Charles , A. Torres , E. Morvan et al.
Microelectronic Engineering, 2013, 109, pp.334-337. ⟨10.1016/j.mee.2013.03.161⟩
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Investigating doping effects on high-kappa metal gate stack for effective work function engineering

Cédric Leroux , S. Baudot , M. Charbonnier , A. van Der Geest , P. Caubet et al.
Solid-State Electronics, 2013, 88, pp.21-26. ⟨10.1016/j.sse.2013.04.011⟩
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Understanding Thickness-Dependent Charge Transport in Pentacene Transistors by Low-Frequency Noise

Y. Xu , C. Liu , W. Scheideler , S.L. Li , W.W. Li et al.
IEEE Electron Device Letters, 2013, 34 (10), pp.1298-1300. ⟨10.1109/LED.2013.2277613⟩
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Impact of quantum effects on the short channel effects of III-V nMOSFETs in weak and strong inversion regimes

T. Dutta , Q. Rafhay , R. Clerc , J. Lacord , S. Monfray et al.
Solid-State Electronics, 2013, 88, pp.43-48. ⟨10.1016/j.sse.2013.04.007⟩
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Low-frequency noise behavior of junctionless transistors compared to inversion-mode transistors

D.-Y. Jeon , S. J. Park , M. Mouis , S. Barraud , G.-T. Kim et al.
Solid-State Electronics, 2013, 81, pp.101-104. ⟨10.1016/j.sse.2012.12.003⟩
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Revisited approach for the characterization of Gate Induced Drain Leakage

Quentin Rafhay , Cuiqin Xu , Perrine Batude , Mireille Mouis , Maud Vinet et al.
Solid-State Electronics, 2012, 71, pp.37-41. ⟨10.1109/ULIS.2011.5757994⟩
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Performance and Modeling of Si-Nanocrystal Double-Layer Memory Devices With High-k Control Dielectrics

Guillaume Gay , Gabriel Molas , Marc Bocquet , Eric Jalaguier , Marc Gély et al.
IEEE Transactions on Electron Devices, 2012, 59 (4), pp.933 - 940. ⟨10.1109/TED.2012.2182769⟩
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Symmetrical unified compact model of short-channel double-gate MOSFETs

K. Papathanasiou , C.G. Theodorou , A. Tsormpatzoglou , D.H. Tassis , A. Dimitriadis et al.
Solid-State Electronics, 2012, 69, pp.55-61. ⟨10.1016/j.sse.2011.10.002⟩
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Short channel mobility analysis of SiGe nanowire p-type field effect transistors: Origins of the strain induced performance improvement

Jae Woo Lee , Doyoung Jang , Mireille Mouis , Kiichi Tachi , Gyu Tae Kim et al.
Applied Physics Letters, 2012, 101 (14), pp.143502. ⟨10.1063/1.4756910⟩
Article dans une revue hal-02334067 v1

Flicker noise in n-channel nanoscale tri-gate fin-shaped field-effect transistors

C. Theodorou , N. Fasarakis , T. Hoffman , T. Chiarella , G. Ghibaudo et al.
Applied Physics Letters, 2012, 101 (24), pp.243512. ⟨10.1063/1.4772590⟩
Article dans une revue hal-02002339 v1

From Atomistic to Device Level Investigation of Hybrid Redox Molecular/Silicon Field-Effect Memory Devices

Tiziana Pro , Julien Buckley , Régis Barattin , Adrian Calborean , Venera Aiello et al.
IEEE Transactions on Nanotechnology, 2011, 10 (2), pp.275-283. ⟨10.1109/TNANO.2009.2038612⟩
Article dans une revue (data paper) hal-04569713 v1

Diagnosis of low-frequency noise sources in contact resistance of staggered organic transistors

Y. Xu , T. Minari , T. Kazuito , R. Gwoziecki , F. Balestra et al.
Applied Physics Letters, 2011, 98, pp.033505
Article dans une revue hal-00596188 v1

Mobility analysis of surface roughness scattering in FinFET devices

Jae Woo Lee , Doyoung Jang , Mireille Mouis , Gyu Tae Kim , Thomas Chiarella et al.
Solid-State Electronics, 2011, 62 (1), pp.195-201. ⟨10.1016/j.sse.2011.04.020⟩
Article dans une revue istex hal-02334151 v1

A Comparative Study of Surface-Roughness-Induced Variability in Silicon Nanowire and Double-Gate FETs

Alessandro Cresti , Marco Pala , Stefano Poli , Mireille Mouis , Gérard Ghibaudo
IEEE Transactions on Electron Devices, 2011, 58 (8), pp.2274-2281. ⟨10.1109/TED.2011.2147318⟩
Article dans une revue hal-02419609 v1

Origin of Low-Frequency Noise in the Low Drain Current Range of Bottom-Gate Amorphous IGZO Thin-Film Transistors

Christoforos Theodorou , Andreas Tsormpatzoglou , Charalabos Dimitriadis , Shahrukh Khan , Jalal Jomaah et al.
IEEE Electron Device Letters, 2011, 32 (7), pp.898-900. ⟨10.1109/LED.2011.2143386⟩
Article dans une revue hal-02001856 v1

Investigation of charge-trap memories with AlN based band engineered storage layers

Gabriel Molas , J.P. Colonna , R. Kies , D. Belhachemi , Marc Bocquet et al.
Solid-State Electronics, 2011, 58 (1), pp.68 - 74. ⟨10.1016/j.sse.2010.11.030⟩
Article dans une revue istex hal-01804675 v1

Measurement of Dipoles/Roll-Off /Work functions by coupling CV and IPE and study of their dependence on fabrication process

M. Charbonnier , Cédric Leroux , V. Cosnier , P. Besson , E. Martinez et al.
IEEE Transactions on Electron Devices, 2010, 57, pp.1819-1819
Article dans une revue hal-00596197 v1

Modeling the Independent Double Gate Transistor in Accumulation Regime for 1TDRAM Application

V. Puget , G. Bossu , P. Masson , P. Mazoyer , R. Ranica et al.
IEEE Transactions on Electron Devices, 2010, 57 (4), pp.855-865
Article dans une revue hal-00596201 v1

Charge Localization during Program and Retention in Nitrided Read Only Memory-Like Nonvolatile Memory Devices

Emmanuel Nowak , E. Vianello , L. Perniola , Marc Bocquet , G. Molas et al.
Japanese Journal of Applied Physics, 2010, 49, pp.04DD12
Article dans une revue hal-00596309 v1

Source/drain optimization of underlapped lightly doped nanoscale double gate MOSFETs

D.H. Tassis , A. Tsormpatzoglou , C.A. Dimitriadis , G. Ghibaudo , G. Pananakakis et al.
Microelectronic Engineering, 2010, 87, pp.23534-2357
Article dans une revue hal-00596325 v1

Analysis of charge sensitivity and low frequency noise limitation in silicon nanowire sensors

J.W. Lee , D. Jang , T. Kim , M. Mouis , G. Ghibaudo
Journ. Appl. Phys, 2010, 107, pp.044501
Article dans une revue hal-00596315 v1

Origin of low-frequency noise in pentacene field-effect transistors

Y. Xu , T. Minari , K. Tsukagoshi , J. Chroboczek , F. Balestra et al.
Solid-State Electronics, 2010, pp.In Press, Corrected Proof, Available online 4 February 2011
Article dans une revue hal-00596355 v1

Non-metallic effects in silicided gate MOSFETs

N. Rodrriguez , F. Gamiz , R. Clerc , C. Sampedro , A. Godoy et al.
Solid-State Electronics, 2010, 53 (12), pp.1313-1317
Article dans une revue hal-00596351 v1

Low-frequency noise in strained SiGe core-shell nanowire p-channel field effect transistors

J. Doyoung , J.W. Lee , Tachi Kiichi , L. Montes , T. Ernst et al.
Applied Physics Letters, 2010, 97, pp.073505
Article dans une revue hal-00596183 v1

Mobility enhancement by CESL strain in short-channel ultrathin SOI MOSFETs

L. Pham-Nguyen , C. Fenouillet-Beranger , G. Ghibaudo , T. Skotnicki , S. Cristoloveanu
Solid-State Electronics, 2010, 54 (2), pp.123-130
Article dans une revue hal-00596348 v1

Extraction of low-frequency noise in contact resistance of organic field-effect transistors

Y. Xu , T. Minari , K. Tsukagoshi , R. Gwoziecki , R. Coppard et al.
Applied Physics Letters, 2010, 97, pp.033503
Article dans une revue hal-00596185 v1

Modeling Local Electrical Fluctuations in 45nm Heavily Pocket-implanted Bulk MOSFET

C. Mezzomo , A. Bajolet , A. Cathignol , E. Joss , G. Ghibaudo
Journal of Solid State Electrochemistry, 2010, 54, pp.1359-1366
Article dans une revue hal-00596341 v1

Modified transmission-line method for contact resistance extraction in organic field-effect transistors

Y. Xu , R. Gwoziecki , Isabelle Chartier , R. Coppard , F. Balestra et al.
Applied Physics Letters, 2010, 97, pp.063302
Article dans une revue hal-00596184 v1

Gate-all-around technology: Taking advantage of ballistic transport?

Huguenin J.L. , G. Bidal , S. Denorme , D. Fleury , N. Loubet et al.
Solid-State Electronics, 2010, 54 (9), pp.883-889
Article dans une revue hal-00596345 v1

Analytical modeling for the current-voltage characteristics of lightly-doped symmetric double-gate MOSFETs

A. Tsormpatzoglou , D.H. Tassis , C.A. Dimitriadis , G. Ghibaudo , G. Pananakakis et al.
Microelectronic Engineering, 2010, 87, pp.1764-1768
Article dans une revue hal-00596324 v1

Unified soft breakdown MOSFETs compact model: From experiments to circuit simulation

L. Gerrer , M. Rafik , G. Ribes , G. Ghibaudo , E. Vincent
Microelectronics Reliability, 2010, 50, pp.1259-1262
Article dans une revue hal-00596327 v1

HfO2-based Gate Stacks Transport Mechanisms and Parameter Extraction

J. Coignus , Cédric Leroux , R. Clerc , R. Truche , G. Ghibaudo et al.
Solid-State Electronics, 2010, 54 (9), pp.972-978
Article dans une revue hal-00596344 v1

Direct evaluation of low-field mobility and access resistance in pentacene field-effect transistors

X. Yong , M. Takeo , T. Kazuhito , A. Chroboczek , G. Ghibaudo
Journ. Appl. Phys., 2010, 107, pp.114507
Article dans une revue hal-00596318 v1

Analytical low-frequency noise model in the linear region of lightly doped nanoscale double-gate metal-oxide-semiconductor field-effect transistors

E.G. Ioannidis , G. Theodorou C. , A. Tsormpatzoglou , D.H. Tassis , K. Papathanasiou et al.
Journ. Appl. Phys., 2010, 108, pp.064512. ⟨10.1063/1.3483279S⟩
Article dans une revue hal-00596310 v1

A comprehensive study of magnetoresistance mobility in short channel transistors: Application to strained and unstrained silicon-on-insulator field-effect transistors

M. Cassé , F. Rochette , L. Thevenod , N. Bhouri , F. Andrieu et al.
Journ. Appl. Phys., 2009, 105 (8), pp.084503:1-9
Article dans une revue hal-00596113 v1

Analysis of electron mobility in HfO2/TiN gate metal-oxide-semiconductor field effect transistors: The influence of HfO2 thickness, temperature and oxide charge

A. Negara , K. Cherkaoui , Hurley Hurley , C.D Young , P. Majhi et al.
Journ. Appl. Phys., 2009, 105 (2), pp.024510:1-8
Article dans une revue hal-00596109 v1

Reliability of charge trapping memories with high-k control dielectrics

G. Molas , Marc Bocquet , E. Vianello , L. Perniola , H. Grampeix et al.
Microelectronic Engineering, 2009, 86, pp.1796-1803
Article dans une revue hal-00596125 v1

Tuning the dipole at the High-/SiO2 interface in advanced metal gate stacks.

M. Charbonnier , Cédric Leroux , V. Cosnier , P. Besson , F. Martin et al.
Microelectronic Engineering, 2009, 86, pp.1740-1742
Article dans une revue hal-00596131 v1

A New Technique to Extract the Source/Drain Series Resistance of MOSFETs

Dominique Fleury , Antoine Cros , Grégory Bidal , Julien Rosa , Gérard Ghibaudo
IEEE Electron Device Letters, 2009, 30 (9), pp.975 - 977. ⟨10.1109/LED.2009.2026592⟩
Article dans une revue hal-00465767 v1

DC and Low Frequency Noise Characterization of FinFET Devices

K. Bennamane , T. Boutchacha , G. Ghibaudo , M. Mouis , N. Collaert
Solid-State Electronics, 2009, 53, pp.1263-1267
Article dans une revue hal-00596176 v1

Performances Comparison of Si and GaAs Based Resonant Tunneling Diodes

E. Buccafurri , R. Clerc , F. Calmon , M.G. Pala , A. Poncet et al.
Physica Status Solidi C: Current Topics in Solid State Physics, 2009, 6 (6), pp.1408-1411
Article dans une revue hal-00596139 v1

Piezoresistance Effect of Strained and Unstrained Fully-Depleted Silicon-On-Insulator MOSFETs Integrating an HfO2/TiN Gate Stack

F. Rochette , M. Cassé , M. Mouis , A. Haziot , T. Pioger et al.
Solid-State Electronics, 2009, 53 (3), pp.392-396
Article dans une revue hal-00596170 v1

Folded fully depleted FET using Silicon-On-Nothing technology as a highly W-scaled planar solution

G. Bidal , N. Loubet , C. Fenouillet-Beranger , S. Denorme , P. Perreau et al.
Solid-State Electronics, 2009, 53, pp.735-740
Article dans une revue hal-00596173 v1

Low-Temperature Electrical Characterization of Fully Depleted eXtra-strained SOI n-MOSFETs with TiN/HfO2 Gate Stack for the 32-nm Technology Node

Sylvain Feruglio , François Andrieu , Faynot Olivier , Gérard Ghibaudo
Cryogenics, 2009, 49 (11), pp.605-610. ⟨10.1016/j.cryogenics.2008.12.004⟩
Article dans une revue istex hal-01198843 v1

Abnormally high local electrical fluctuations in heavily pocket-implanted bulk long MOSFET

S. Bordez , A. Cros , K. Rochereau , G. Ghibaudo
Solid-State Electronics, 2009, 53 (2), pp.127-133
Article dans une revue hal-00596158 v1

In Situ Comparison of Si/High- K and Si/SiO2 Channel Properties in SOI MOSFETs

L. Pham-Nguyen , C. Fenouillet-Beranger , A. Vandooren , T. Skotnicki , G. Ghibaudo et al.
IEEE Electron Device Letters, 2009, 30 (10), pp.1075-1077. ⟨10.1109/LED.2009.2027141⟩
Article dans une revue hal-00596074 v1
Image document

Impact of a HTO/Al$_2$O$_3$ bi-layer blocking oxide in nitride-trap non-volatile memories

Marc Bocquet , G. Molas , L. Perniola , X. Garros , J. Buckley et al.
Solid-State Electronics, 2009, 53, pp.786 - 791. ⟨10.1016/j.sse.2009.03.018⟩
Article dans une revue hal-01737746 v1

Experimental characterization of the subthreshold leakage current in triple-gate FinFETs

A. Tsormpatzoglou , C.A. Dimitriadis , M. Mouis , G. Ghibaudo , N. Collaert
Solid-State Electronics, 2009, 53 (3), pp.359-363
Article dans une revue hal-00596155 v1

Backscattering coefficient and drift-diffusion mobility extraction in short channel MOS devices

I. Pappas , G. Ghibaudo , C.A. Dimitriadis , C. Fenouillet-Beranger
Solid-State Electronics, 2009, 53 (1), pp.54-56
Article dans une revue hal-00596166 v1

Electrical characterization and design optimization of FinFETs with a TiN/HfO2 gate stack

A. Tsormpatzoglou , D.H. Tassis , C.A. Dimitriadis , M. Mouis , G. Ghibaudo et al.
Semiconductor Science and Technology, 2009, 24 (12), pp.125001:6
Article dans une revue hal-00596144 v1

Method for extraction of  parameter characterizing µeff vs Eeff curves in FD-SOI Si MOS devices

K. Bennamane , G. Ghibaudo , A. Benfdila
Electronics Letters, 2009, 45 (12), pp.655-657
Article dans une revue hal-00596070 v1

SiO2 interfacial layer as the origin of the breakdown of high- dielectrics stacks

M. Rafik , G. Ribes , Daniel Roy , G. Ghibaudo
Journal of Vacuum Science and Technology, 2009, 27 (1), pp.395-399
Article dans une revue hal-00596107 v1

EKV3 compact modeling of MOS transistors from a 0.18 µm CMOS technology for mixed analog-digital circuit design at low temperature

P. Martin , M. Cavelier , R. Fascio , G. Ghibaudo , M. Bucher
Cryogenics, 2009, pp.In Press, Corrected Proof, Available online 1 January 2009
Article dans une revue hal-00596009 v1

Low frequency noise analysis in HfO2/SiO2 gate oxide fully depleted silicon on insulator transistors

L. Zafari , J. Jomaah , G. Ghibaudo , O. Faynot
Journal of Vacuum Science and Technology, 2009, 27 (1), pp.402-405
Article dans une revue hal-00596106 v1
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Contact etch stop a-Si<sub>x</sub>N<sub>y</sub>:H layer: A key factor for single polysilicon flash memory data retention

G. Beylier , D. Benoit , P. Mora , S. Bruyère , G. Ghibaudo
Journal of Vacuum Science and Technology, 2009, 27 (1), pp.486-489. ⟨10.1116/1.3071846⟩
Article dans une revue hal-00596103 v1
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Analytical Modeling of Tunneling Current through SiO2-HfO2 Stacks in MOS Structures

J. Coignus , R. Clerc , Cédric Leroux , G. Reimbold , G. Ghibaudo et al.
Journal of Vacuum Science and Technology, 2009, 27 (1), pp.338-345. ⟨10.1116/1.3043539⟩
Article dans une revue hal-00596105 v1

Investigation of Hybrid Molecular/Silicon Memories With Redox-Active Molecules Acting as Storage Media

T. Pro , J. Buckley , K. Huang , A. Calborean , M. Gely et al.
IEEE Transactions on Nanotechnology, 2009, 8 (2), pp.204-213. ⟨10.1109/TNANO.2008.2009875⟩
Article dans une revue (data paper) hal-04569727 v1

Compact drain current model of short-channel cylindrical gate-all-around MOSFETs

A. Tsormpatzoglou , C.A. Dimitriadis , G. Ghibaudo , G. Pananakakis
Semiconductor Science and Technology, 2009, 24, pp.075017
Article dans une revue hal-00596143 v1

Method for 3D electrical parameters dissociation and extraction in multichannel MOSFET (MCFET)

C. Dupré , T. Ernst , E. Bernard , B. Guillaumot , N. Vulliet et al.
Solid-State Electronics, 2009, 53, pp.746-752
Article dans une revue hal-00596162 v1

New Characterization Methodology of Borderless Silicon Nitride Charge Kinetics Using C-V Hysteresis Loops

G. Beylier , S. Bruyère , P. Mora , G. Ghibaudo
Journal of The Electrochemical Society, 2008, 155, H273-H279
Article dans une revue hal-00391680 v1

Analysis of spatial and energy slow trap profile in HfO2/SiO2 metal-oxide-silicon devices by low frequency noise measurements

L. Zafari , J. Jomaah , G. Ghibaudo
Fluctuation and Noise Letters, 2008, 8, L99
Article dans une revue hal-00391716 v1

Semi-analytical modeling of short channel effects in Si and Ge symmetrical double-gate MOSFETs

A. Tsormpatzoglou , C. Dimitriadis , R. Clerc , Q. Rafhay , G. Pananakakis et al.
IEEE Transactions on Electron Devices, 2008, 54 (8), pp.1943-1946
Article dans une revue hal-00392897 v1

Quantitative Evaluation of Statistical Variability Sources in a 45nm Technological Node LP N-MOSFET

A. Cathignol , B. Cheng , D. Chanemougame , A. R. Brown , K. Rochereau et al.
IEEE Electron Device Letters, 2008, 29 (6), pp.609-611
Article dans une revue hal-00392652 v1

Impact of inside spacer process on fully self-aligned 250 GHz SiGe:C HBTs reliability performances: a-Si vs. Nitride

Mame Andallah Diop , N. Revil , M. Marin , F. Monsieur , P. Chevalier et al.
Microelectronics Reliability, 2008, 48 (8-9), pp.1198-1201
Article dans une revue hal-00392673 v1

Physical Understanding of the Hooge Parameter in ZnO Nanowire Devices.

J. Lee , I. Han , B.Y. Yu , G.C. Yi , G. Ghibaudo
Journal of the Korean Physical Society, 2008, 53, pp.339-342
Article dans une revue hal-00391707 v1

Extraction of eta parameter characterising µ(eff) against E-eff curves in strained Si nMOS devices

K. Bennamane , M. Demichielis , G. Ghibaudo , D. Esseni
Electronics Letters, 2008, 44, 1219-1220
Article dans une revue hal-00391709 v1

On the Physical Origins of Mismatch in Si/SiGe:C Heterojunction Bipolar Transistors for BiCMOS Technologies.

S. Danaie , M. Marin , G. Ghibaudo
Solid-State Electronics, 2008, 52, 323
Article dans une revue hal-00391686 v1

Threshold Voltage Model for Short-Channel Undoped symmetrical Double-Gate MOSFETs

A. Tsormpatzoglou , C.A. Dimitriadis , R. Clerc , G. Pananakakis , G. Ghibaudo
IEEE Transactions on Electron Devices, 2008, 55, 2512
Article dans une revue hal-00391604 v1

3D nanowire gate-all-around transistors: Specific integration and electrical features

C. Dupré , T. Ernst , V. Maffini-Alvaro , V. Delaye , J.-M. Hartmann et al.
Solid-State Electronics, 2008, 52, 519
Article dans une revue hal-00391692 v1

Impact of Silicon nitride CESL on NLDEMOS transistor reliability,

G. Beylier , S. Bruyère , D. Benoit , G. Ghibaudo
Microelectronics Reliability, 2008, 48 (8-9), pp.1539-1543
Article dans une revue hal-00392670 v1

The Quantization Impact of Accumulated Carriers in Silicide-Gated MOSFETs

N. Rodriguez , F. Gámiz , L. Donetti , R. Clerc , G. Ghibaudo et al.
IEEE Electron Device Letters, 2008, 29, pp.628-631
Article dans une revue hal-00391601 v1

Semi-analytical modelling of short channel effects in Si Double-Gate, Tri-Gate and Gate-All-Around MOSFETs

A. Tsormpatzoglou , C.A. Dimitriadis , R. Clerc , G. Pananakakis , G. Ghibaudo
Physica Status Solidi C: Current Topics in Solid State Physics, 2008, 5 (12), pp.3605-3608
Article dans une revue hal-00391594 v1

Low-frequency noise characterization of ZnO nanorod back-gate field-effect transistor structure

J. Lee , B.Y. Yu , C.H. Lee , G.C. Yi , S.H. Son et al.
Physica E: Low-dimensional Systems and Nanostructures, 2008, 40, 2147-2149
Article dans une revue hal-00391703 v1

Evaluation of HfAlO high-k materials for control dielectric applications in non-volatile memories.

G. Molas , Marc Bocquet , J. Buckley , H. Grampeix , M. Gély et al.
Microelectronic Engineering, 2008, 85, 2393-2399
Article dans une revue hal-00391751 v1

Automatic extraction methodology for accurate measurement of effective channel length on 65nm MOSFET technology and Below

Dominique Fleury , Antoine Cros , Krunoslav Romanjek , David Roy , Franck Perrier et al.
IEEE Transactions on Semiconductor Manufacturing, 2008, 21 (4), pp.504 - 512. ⟨10.1109/TSM.2008.2004316⟩
Article dans une revue hal-00465752 v1

Modeling and simulation of coupling effect on low frequency noise in advance SOI MOSFETs.

L. Zafari , J. Jomaah , G. Ghibaudo
Fluctuation and Noise Letters, 2008, 8, L87
Article dans une revue hal-00391713 v1

Automatic Extraction Methodology for Accurate Measurements of Effective Channel Length on 65nm MOSFET Technology and Below.

D. Fleury , A. Cros , K. Romanjek , Daniel Roy , F. Perrier et al.
IEEE Transactions on Semiconductor Manufacturing, 2008
Article dans une revue hal-00391695 v1

Impact of source-to-drain tunnelling on the scalability of arbitrary oriented alternative channel material nMOSFETs

Q. Rafhay , R. Clerc , G. Ghibaudo , G. Pananakakis
Solid-State Electronics, 2008, 52 (Issue 10), pp.1474-1481
Article dans une revue hal-00391582 v1

In-depth Electrical Characterization of sub-45nm fully depleted strained SOI MOSFETs with TiN/HfO2 gate stack

Sylvain Feruglio , F. Andrieu , O. Faynot , G. Ghibaudo
Solid-State Electronics, 2008, 55, 489 (4), ⟨10.1016/j.sse.2007.10.039⟩
Article dans une revue istex hal-00391693 v1

Origin of the Asymmetry in the Statistical Variability of n- and p-channel Poly Si Gate Bulk MOSFETs

A. Asenov , A. Cathignol , B. Cheng , K. P. Mckenna , A. R. Brown et al.
IEEE Electron Device Letters, 2008, 29, 913
Article dans une revue hal-00391676 v1

Impact of Channel Orientation on Ballistic Current of nDGFETs with Alternative Channel Materials

Q. Rafhay , R. Clerc , M. Ferrier , G. Pananakakis , G. Ghibaudo
Solid-State Electronics, 2008, 52 (Issue 4), pp.540-547
Article dans une revue hal-00391540 v1

Experimental evidence of mobility enhancement in short-channel ultra-thin body double-gate MOSFETs by magnetoresistance technique

W. Chaisantikulwat , M. Mouis , G. Ghibaudo , S. Cristoloveanu , J. Widiez et al.
Solid-State Electronics, 2007, 51 (11-12), pp.1494-1499
Article dans une revue hal-00393713 v1

Comparison of carrier velocity gain in Uniaxially and Biaxially Strained N-MOSFETs

T. Benshidoum , G. Ghibaudo , F. Boeuf
Electronics Letters, 2007, 43, pp.647648
Article dans une revue hal-00392835 v1

Impact of TiN plasma post-treatment on alumina electron trapping

A. Bajolet , S. Bruyère , M. Proust , L. Montès , G. Ghibaudo
IEEE Transactions on Device and Materials Reliability, 2007, 7 (2), pp.242-251
Article dans une revue hal-00392849 v1

Borderless silicon nitride defect behaviour and their influences on initial data loss in single polysilicon flash memories

G. Beylier , S. Bruyère , G. Ghibaudo
Microelectronic Engineering, 2007, 84 (9-10), pp.1990-1993
Article dans une revue hal-00393156 v1

High threshold voltage matching performance on gate-all-around MOSFET

A. Cathignol , A. Cros , S. Harrison , R. Cerrutti , P. Coronel et al.
Solid-State Electronics, 2007, 51 (11-12), pp.1450-1457. ⟨10.1016/j.sse.2007.09.033⟩
Article dans une revue hal-00196042 v1

Refined electrical analysis of two charge states transition characteristic of "borderless" silicon nitride

G. Beylier , S. Bruyere , D. Benoit , G. Ghibaudo
Microelectronics Reliability, 2007, 47 (4-5), pp.660-664
Article dans une revue hal-00393545 v1

Modified space-charge limited conduction in tantalum pentoxide MIM capacitors

V. Martinez , C. Besset , F. Monsieur , L. Montès , G. Ghibaudo
Microelectronic Engineering, 2007, 84 (9-10), pp.2310-2313
Article dans une revue hal-00393314 v1

Initial and PBTI-induced traps and charges in Hf-based oxides/TiN stacks

G. Reimbold , J. Mitard , X. Garros , Cédric Leroux , G. Ghibaudo et al.
Microelectronics Reliability, 2007, 47 (4-5), pp.660-664
Article dans une revue hal-00393386 v1

Low frequency noise in biaxially strained silicon n-MOSFETs with ultrathin gate

T. Contaret , B. Touati , G. Ghibaudo , F. Bœuf , T. Skotnicki
Solid-State Electronics, 2007, 51 (4), pp.633-637
Article dans une revue hal-00393634 v1

Automatic statistical full quantum analysis of C-V and I-V characteristics for advanced MOS gate stacks

Cédric Leroux , F. Allain , A. Toffoli , G. Ghibaudo , G. Reimbold
Microelectronic Engineering, 2007, 84 (9-10), pp.2408-2411
Article dans une revue hal-00393151 v1

Tensile strain in arsenic heavily doped Si

G. Borot , L. Rubaldo , L. Clément , R. Pantel , D. Dutartre et al.
Journ. Appl. Phys, 2007, 102 (10), pp.103505:1-5
Article dans une revue hal-00393074 v1

Carrier mobility degradation due to high dose implantation in ultrathin unstrained and strained silicon-on-insulator films

C. Dupré , T. Ernst , J.-M. Hartmann , F. Andrieu , J.-P. Barnes et al.
Journ. Appl. Phys, 2007, 102 (10), pp.104505:1-8
Article dans une revue hal-00393080 v1

Accurate determination of flat band voltage in advanced MOS structure

Charles Leroux , G. Ghibaudo , G. Reimbold
Microelectronics Reliability, 2007, 47 (4-5), pp.743-747
Article dans une revue hal-00393326 v1

Low frequency noise in multi-gate SOI CMOS devices

Leily Zafari , Jalal Jomaah , Gérard Ghibaudo
Solid-State Electronics, 2007, 51 (2), pp.292-298. ⟨10.1016/j.sse.2007.01.005⟩
Article dans une revue hal-00145099 v1

Ultra thin fully depleted SOI MOSFETs: Special charge properties and coupling effects

S. Eminente , S. Cristoloveanu , R. Clerc , A. Ohata , Gérard Ghibaudo
Solid-State Electronics, 2007, 51, pp.239-244
Article dans une revue hal-00393606 v1

Conventional Technological Boosters for Injection Velocity in Ultrathin-Body MOSFETs

M. Ferrier , Raphael Clerc , L. Lucci , Quentin Rafhay , Georges Pananakakis et al.
IEEE Transactions on Nanotechnology, 2007, 6 (6), pp.613-621
Article dans une revue hal-01957720 v1

The influence of HfO2 film thickness on the interface state density and low field mobility of n channel HfO2/TiN gate MOSFETs

M. Negara , K. Cherkaoui , P. Majhi , C. Young , W. Tsai et al.
Microelectronic Engineering, 2007, 84 (9-10), pp.1874-1877
Article dans une revue hal-00393091 v1

Analytical model for quantization on strained and unstrained bulk nMOSFET and its impact on quasi-ballistic current

M. Ferrier , R. Clerc , Gérard Ghibaudo , F. Boeuf , T. Skotnicki
Solid-State Electronics, 2006, 50, pp.69-77
Article dans une revue hal-00145456 v1

Origin of Vt instabilities in high-k dielectrics: Jahn-Tellet effects or oxygen vacancies

G. Ribes S. Bruyère D. Roy C. Parthasarathy M. Muller M. Denais V. Huard T. Skotnicki , G. Ghibaudo
IEEE Transactions on Device and Materials Reliability, 2006, 6, pp.132
Article dans une revue hal-00145510 v1

Low temperature characterization of effective mobility in uniaxially and biaxially strained N-MOSFETs

F. Lime , F. Andrieu , J. Derix , Gérard Ghibaudo , F. Boeuf et al.
Solid-State Electronics, 2006, 50, pp.644
Article dans une revue hal-00145112 v1

Performance and Physics of sub-50nm Strained Si on Si1-xGex-On-Insulator (SGOI) nMOSFETs

F. Andrieu , T. Ernst , O. Faynot , O. Rozeau , Y. Bogumilowicz et al.
Solid-State Electronics, 2006, 50, pp.566
Article dans une revue hal-00145116 v1

A new degradation mode for advanced heterojunction bipolar transistors under reverse bias stress

M. Ruat , A. Pakfar , N. Revil , G. Pananakakis , Gérard Ghibaudo
IEEE Transactions on Device and Materials Reliability, 2006, 6, pp.154
Article dans une revue hal-00145500 v1

Analytical Compact Model for Quantization in Undoped Double-Gate Metal Oxide Semiconductor Field Effect Transistors and Its Impact on Quasi-Ballistic Current

M. Ferrier , R. Clerc , G. Pananakakis , Gérard Ghibaudo , F. Bœuf et al.
Jpn. J. Appl. Phys, 2006, 45, Part 1, No. 4B, pp.3088-3096
Article dans une revue hal-00145451 v1

Impact of gate polysilicon interface on carrier trapping low frequency noise in advanced MOSFET's

Gérard Ghibaudo , J. Jomaah , F. Balestra
Fluctuations and noise letters, 2006, 6, pp.L427
Article dans une revue hal-00145107 v1

Differential Magnetoresistance Technique for Mobility Extraction in Ultra-Short Channel FDSOI Transistors

Gérard Ghibaudo , W. Chaisantikulwat , Mireille Mouis , C. Gallon , C. Fenouillet-Beranger et al.
Solid-State Electronics, 2006, 50 Issue 4, pp.637-643. ⟨10.1016/j.sse.2006.03.035⟩
Article dans une revue istex hal-00145113 v1

Performance and Physics of sub-50nm Strained Si on Si1-xGex-On-Insulator (SGOI) MOSFETs

F. Andrieu , T. Ernst , O. Faynot , O. Rozeau , Y. Bogumilowicz et al.
Solid-State Electronics, 2006, 50, pp.566
Article dans une revue hal-00145501 v1

Modeling and optimization of series resistance of planar MIM capacitors

A. Bajolet , R. Clerc , E. Picollet , N. Segura , S. Boret et al.
Solid-State Electronics, 2006, 50, pp.1244
Article dans une revue hal-00145111 v1

Excess drain noise simulations in ultra thin oxides MOSFETs

T. Contaret , Gérard Ghibaudo , A. Ferron , F. Bœuf
Journal of Computational Electronics, 2006, 5, pp.187
Article dans une revue hal-00145507 v1

Low temperature characterization of effective mobility in uniaxially and biaxially strained N-MOSFETs

F. Lime , F. Andrieu , J. Derix , Gérard Ghibaudo , F. Boeuf et al.
Solid-State Electronics, 2006, 50, pp.644
Article dans une revue hal-00145505 v1

Modeling and optimization of series resistance of planar MIM capacitors

A. Bajolet , R. Clerc , G. Pananakakis , E. Picollet , N. Segura et al.
Solid-State Electronics, 2006, 50, pp.1244-1251
Article dans une revue hal-00145449 v1

Electron mobility in quasi ballistic Si MOSFETs

J. Lusakowski , W. Knap , Y. Meziani , J.- P. Cesso , A. El Fatimy et al.
Solid-State Electronics, 2006, 50, pp.632
Article dans une revue hal-00145502 v1

Degradation of floating gate memory reliability by few electron phenomena

G. Molas , D. Deleruyelle , B. Desalvo , Gérard Ghibaudo , M. Gely et al.
IEEE Transactions on Electron Devices, 2006, 53, pp.2610
Article dans une revue hal-00145101 v1

Origin of Vt instabilities in high-k dielectrics: Jahn-Tellet effects or oxygen vacancies

G. Ribes , S. Bruyère , D. Roy , C. Parthasarathy , M. Muller et al.
IEEE Transactions on Device and Materials Reliability, 2006, 6, pp.132
Article dans une revue hal-00145108 v1

Electron mobility in quasi ballistic Si MOSFETs

J. Łusakowski , W. Knap , Y. Meziani , J.P. Cesso , A. El Fatimy et al.
Solid-State Electronics, 2006, 50, pp.632
Article dans une revue hal-00145115 v1

Impact of gate polysilicon interface on carrier trapping low frequency noise in advanced MOSFET's

Gérard Ghibaudo , J. Jomaah , F. Balestra
Fluctuations and noise letters, 2006, 6, pp.L427
Article dans une revue hal-00145512 v1

On the SILC mechanism in MOSFETS with ultra thin oxides

D. Bauza , Gérard Ghibaudo , F. Rahmoune
Microelectronics Reliability, 2005, vol. 45, pp.849-852
Article dans une revue hal-00145184 v1

A simple approach to account for the impact of quantum confinement on the charge in semi classical montecarlo simulations of Bulk nMOSFETs

R. Hudé , D. Villanueva , R. Clerc , Gérard Ghibaudo , E. Robilliart
ULtimate Integration of Silicon (ULIS) Workshop 2005, 2005, XX, pp.XX
Article dans une revue hal-00146185 v1

New features on the SILC in MOSFET's with ultrathin oxides

D. Bauza , Gérard Ghibaudo , F. Lime , F. Rahmoune
Symposium on the Physics and Chemistry of SiO_2 and the Si-SiO_2 Interface - 5, H.Z. Massoud, 2005, 1-56677-430-6
Article dans une revue hal-00146162 v1

Analytical model of the effects of a nonuniform distribution of stored charge on the electrical characteristics of discrete-trap nonvolatile memories

L. Perniola , S. Bernardini , G. Iannaconne , P. Masson , B. de Salvo et al.
IEEE Transactions on Nanotechnology, 2005, 4 (3), pp.360-368. ⟨10.1109/tnano.2005.847033⟩
Article dans une revue hal-01633144 v1

Analytical model of the effects of a non-uniform distribution of stored charge on the electrical characteristics of discrete-trap memories

L. Perniola , G. Iannacone , B. Desalvo , Gérard Ghibaudo
IEEE Transactions on Nanotechnology, 2005, 4, n°3, pp.360-365
Article dans une revue hal-00145235 v1

Low frequency noise in advanced Si bulk and SOI MOSFETs

J. Jomaah , F. Balestra , Gérard Ghibaudo
Journal of Telecommunications and Information Technology, 2005, pp.24-33
Article dans une revue hal-00145241 v1

Characterization of the effective mobility by split C(V) technique in sub 0.1µm Si and SiGe PMOSFETs

K. Romanjek , F. Andrieu , T. Ernst , Gérard Ghibaudo
Solid-State Electronics, 2005, pp.0
Article dans une revue hal-00145237 v1

Compact model for quasi ballistic transport and quantization in strained and unstrained bulk MOSFETs

M. Ferrier , R. Clerc , Gérard Ghibaudo , F. Boeuf , T. Skotnicki
ULtimate Integration of Silicon (ULIS) Workshop 2005, 2005, XX
Article dans une revue hal-00146183 v1

Modeling of the programming window distribution in multinanocrystals memories

L. Perniola , B. de Salvo , G. Ghibaudo , A. Foglio Para , G. Pananakakis et al.
IEEE Transactions on Nanotechnology, 2003, VOL. 2, NO. 4, p. 277, (2003)
Article dans une revue hal-00477194 v1
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Gate and Substrate Currents in Deep Submicron MOSFETs

B. Szelag , F. Balestra , G. Ghibaudo , M. Dutoit
Journal de Physique IV Proceedings, 1996, 06 (C3), pp.C3-61-C3-66. ⟨10.1051/jp4:1996309⟩
Article dans une revue istex jpa-00254227 v1
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Characterization and Modeling of Silicon CMOS Transistor Operation at Low Temperature

G. Ghibaudo , F. Balestra
Journal de Physique IV Proceedings, 1996, 06 (C3), pp.C3-3-C3-11. ⟨10.1051/jp4:1996301⟩
Article dans une revue jpa-00254219 v1
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Study of saturation velocity overshoot in deep submicron silicon MOSFETS from liquid helium up to room temperature

K. Rais , G. Ghibaudo , F. Balestra , M. Dutoit
Journal de Physique IV Proceedings, 1994, 04 (C6), pp.C6-19-C6-24. ⟨10.1051/jp4:1994603⟩
Article dans une revue jpa-00253097 v1
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Modeling of self-heating effects in thin-film soi MOSFET's as a function of temperature

J. Jomaah , G. Ghibaudo , F. Balestra
Journal de Physique IV Proceedings, 1994, 04 (C6), pp.C6-57-C6-62. ⟨10.1051/jp4:1994609⟩
Article dans une revue istex jpa-00253103 v1
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A NEW METHOD FOR THE EXTRACTION OF MOSFET PARAMETERS AT AMBIENT AND LIQUID HELIUM TEMPERATURES

F. Balestra , L. Hafez , G. Ghibaudo
Journal de Physique Colloques, 1988, 49 (C4), pp.C4-817-C4-820. ⟨10.1051/jphyscol:19884172⟩
Article dans une revue istex jpa-00227914 v1
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Etude de silicium implanté à l'arsenic par effet de transport. Influence du recuit thermique

C. Christofidès , G. Ghibaudo , H. Jaouen
Revue de Physique Appliquée, 1987, 22 (6), pp.407-412. ⟨10.1051/rphysap:01987002206040700⟩
Article dans une revue istex jpa-00245555 v1
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Etude et modélisation de la dégradation des transistors MOS submicroniques soumis à une contrainte électrique

B. Cabon-Till , G. Ghibaudo
Revue de Physique Appliquée, 1986, 21 (5), pp.305-318. ⟨10.1051/rphysap:01986002105030500⟩
Article dans une revue istex jpa-00245448 v1
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Transport dans la couche d'inversion d'un transistor MOS. Utilité du formalisme de Kubo-Greenwood

G. Ghibaudo
Revue de Physique Appliquée, 1986, 21 (2), pp.121-129. ⟨10.1051/rphysap:01986002102012100⟩
Article dans une revue istex jpa-00245417 v1

Influence of source-drain series resistance on MOSFET field-effect mobility

B. Cabon-Till , G. Ghibaudo , S. Cristoloveanu
Electronics Letters, 1985, 21 (11), pp.457-458. ⟨10.1049/el:19850324⟩
Article dans une revue hal-02114100 v1

DENSIFICATION OF THERMAL SIO2 DUE TO INTRINSIC OXIDATION STRESSING

A Fargeix , G. Ghibaudo
Journal of Physics D: Applied Physics, 1984, 17 (11), pp.2331-2336. ⟨10.1088/0022-3727/17/11/020⟩
Article dans une revue istex hal-02114094 v1
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Le matériau silicium sur saphir en France. Revue des propriétés physico-chimiques et électriques

S. Cristoloveanu , G. Ghibaudo , G. Kamarinos
Revue de Physique Appliquée, 1984, 19 (2), pp.161-185. ⟨10.1051/rphysap:01984001902016100⟩
Article dans une revue jpa-00245170 v1

Le matériau silicium sur saphir en France. Revue des propriétés physico-chimiques et électriques

S. Cristoloveanu , G. Ghibaudo , G. Kamarinos
Revue de Physique Appliquée, 1984, 19 (2), pp.161-185. ⟨10.1051/rphysap:01984001902016100⟩
Article dans une revue hal-02114098 v1

Conductivity near a mobility edge in 2D electronic systems

G. Ghibaudo
Journal of Physics C: Solid State Physics, 1984, 17 (17), pp.3067-3072. ⟨10.1088/0022-3719/17/17/015⟩
Article dans une revue istex hal-02114089 v1

Role of stress on the parabolic kinetic constant for dry silicon oxidation

A. Fargeix , G. Ghibaudo
Journal of Applied Physics, 1984, 56 (2), pp.589-591. ⟨10.1063/1.333924⟩
Article dans une revue hal-02114086 v1

A revised analysis of dry oxidation of silicon

A. Fargeix , G. Ghibaudo , G. Kamarinos
Journal of Applied Physics, 1983, 54 (5), pp.2878-2880. ⟨10.1063/1.332286⟩
Article dans une revue hal-02114079 v1

A revised analysis of dry oxidation of silicon

A. Fargeix , G. Ghibaudo
Journal of Applied Physics, 1983, 54 (5), pp.2878-2880. ⟨10.1063/1.332286⟩
Article dans une revue hal-02114081 v1

Evidence of mobility edge in degenerate SOS films

G. Ghibaudo , D Tsamakis , C Papatriantafillou , G. Kamarinos , E Rokofillou
Journal of Physics C: Solid State Physics, 1983, 16 (22), pp.4479-4485. ⟨10.1088/0022-3719/16/22/020⟩
Article dans une revue istex hal-02114082 v1
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Analyse des propriétés de transport électrique dans le silicium sur isolant — Utilisation du pouvoir thermoélectrique

G. Ghibaudo , G. Kamarinos
Revue de Physique Appliquée, 1982, 17 (3), pp.133-143. ⟨10.1051/rphysap:01982001703013300⟩
Article dans une revue istex jpa-00244981 v1

Thermopower of a quasi-two-dimensional electron gas

G. Ghibaudo , G. Kamarinos
physica status solidi (b), 1982, 114 (2), pp.K105-K110. ⟨10.1002/pssb.2221140259⟩
Article dans une revue istex hal-02114075 v1
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Cryogenic electronics for quantum computing ICs: what can bring FDSOI

Mikaël Cassé , Bruna Cardoso Paz , Flavio Bergamaschi , Gérard Ghibaudo , Francis Balestra et al.
245th ECS Meeting, The Electrochemical Society, May 2023, Boston MA, United States. pp.149, ⟨10.1149/11101.0149ecst⟩
Communication dans un congrès hal-04246065 v1
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Experimental Study of Self-Heating Effect in InGaAs HEMTs for Quantum Technologies Down to 10K

F. Serra Di Santa Maria , C. B. Zota , E. Cha , Francis Balestra , Christoforos Theodorou et al.
IEEE International Reliability Physics Symposium (IRPS), Mar 2023, Monterey, United States. ⟨10.1109/IRPS48203.2023.10118294⟩
Communication dans un congrès hal-04246081 v1
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Drain Current Variability in 2-levels Stacked Nanowire Gate All Around P-type Field Effect Transistors

Donghyun Kim , Sylvain Barraud , Gérard Ghibaudo , Christoforos Theodorou , Jae Woo Lee
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), Mar 2023, Seoul, South Korea. pp.1-3, ⟨10.1109/EDTM55494.2023.10103067⟩
Communication dans un congrès hal-04305370 v1

Frequency dependant gate oxide TDDB model

M. Arabi , X. Federspiel , F. Cacho , M. Rafik , S. Blonkowski et al.
irps 2022 6 IEEE International Reliability Physics Symposium, Mar 2022, Dallas, United States. pp.P25-1-P25-5, ⟨10.1109/IRPS48227.2022.9764503⟩
Communication dans un congrès hal-04786056 v1

Electrical characterization and modeling of FDSOI MOSFETs for Cryo-Electronics

Mikael Casse , Bruna Cardoso Paz , Gérard Ghibaudo , Maud Vinet
Workshop On Low Temperature Electronics, Jun 2022, Matera, Italy. pp.10.1109/WOLTE55422.2022.9882859
Communication dans un congrès cea-04285226 v1
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In-depth electrical characterization of deca-nanometer InGaAs MOSFET down to deep cryogenic temperatures

F. Serra Di Santa Maria , Christoforos Theodorou , Francis Balestra , Gérard Ghibaudo , Eunjung Cha et al.
IEEE 52nd European Solid-State Device Research Conference (ESSDERC), Sep 2022, Milan, Italy. ⟨10.1109/ESSDERC55479.2022.9947142⟩
Communication dans un congrès hal-03853017 v1

Second Harmonic Generation: Non-Linear Optics for Characterization of Electrical Properties of Dielectric-on-Semiconductor Interfaces

Irina Ionica , D. Damianos , Baydaa Obeid , Anne Kaminski , Danièle Blanc-Pelissier et al.
symposium D02: Dielectrics for Nanosystems 9: Materials Science, Processing, Reliability, and Manufacturing, conference 241st ECS meeting, May 2022, Vancouver (CA), Canada
Communication dans un congrès hal-04743586 v1

FDSOI for cryoCMOS electronics: device characterization towards compact model

Mikael Casse , Bruna Cardoso Paz , Flavio Bergamaschi , Gérard Ghibaudo , Francesco Serra et al.
IEDM 2022, Dec 2022, San Francisco, United States. pp.827, ⟨10.1109/IEDM45625.2022.10019322⟩
Communication dans un congrès cea-04249903 v1

The impact of free carriers and surface traps on semiconducting piezoelectric devices

Gustavo Ardila , Andres Jenaro Lopez Garcia , Quang Chieu Bui , Thomas Jalabert , Manojit Pusty et al.
6th International on-line Conference on Nanogenerators and Piezotronics, NGPT 2022, Jun 2022, Sundsvall, Sweden
Communication dans un congrès hal-04988727 v1
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Low temperature behavior of FD-SOI MOSFETs from micro- to nano-meter channel lengths

F. Serra Di Santa Maria , Christoforos Theodorou , Xavier Mescot , Francis Balestra , Gérard Ghibaudo et al.
14th Workshop on Low Temperature Electronics ( WOLTE 2021), Apr 2021, Virtual, Italy. ⟨10.1109/WOLTE49037.2021.9555451⟩
Communication dans un congrès hal-03368251 v1

Mechanical energy transducers based on semiconducting piezoelectric nanowires

Gustavo Ardila , Andres Jenaro Lopez Garcia , Vincent Consonni , Alessandro Cresti , G. Ghibaudo et al.
MRM2021 Materials Research Meeting, Dec 2021, Yokohama ( virtual ), Japan
Communication dans un congrès hal-04987897 v1

Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT

A.G. Viey , W. Vandendaele , M.-A. Jaud , J. Coignus , J. Cluzel et al.
2021 IEEE International Reliability Physics Symposium (IRPS), Mar 2021, Monterey, United States. pp.1-8, ⟨10.1109/IRPS46558.2021.9405221⟩
Communication dans un congrès cea-04951884 v1

Reliable method for low field temperature dependent mobility extraction at Al2O3/GaN interface

B. Rrustemi , A. Viey , M.-A. Jaud , F. Triozon , W. Vandendaele et al.
ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC), Sep 2021, Grenoble, France. pp.295-298, ⟨10.1109/ESSDERC53440.2021.9631766⟩
Communication dans un congrès hal-04745770 v1
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“Pinch to Detect”: A Method to Increase the Number of Detectable RTN Traps in Nano-scale MOSFETs

Angeliki Tataridou , Gerard Ghibaudo , Christoforos Theodorou
2021 IEEE International Reliability Physics Symposium (IRPS), Mar 2021, Monterey, United States. ⟨10.1109/IRPS46558.2021.9405102⟩
Communication dans un congrès hal-03260919 v1
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Comprehensive Kubo-Greenwood modelling of FDSOI MOS devices down to deep cryogenic temperatures

F. Serra Di Santa Maria , L. Contamin , M. Cassé , Christoforos Theodorou , Francis Balestra et al.
2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS), Sep 2021, Caen, France. ⟨10.1109/EuroSOI-ULIS53016.2021.9560694⟩
Communication dans un congrès hal-03852877 v1
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VERILOR: A Verilog-A Model of Lorentzian Spectra for Simulating Trap-related Noise in CMOS Circuits

Angeliki Tataridou , Gérard Ghibaudo , Christoforos Theodorou
ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC), Sep 2021, Grenoble, France. pp.247-250, ⟨10.1109/ESSDERC53440.2021.9631802⟩
Communication dans un congrès hal-03876875 v1

Carbon-related pBTI degradation mechanisms in GaN-on-Si E-mode MOSc-HEMT

A. Viey , W. Vandendaele , M.-A. Jaud , L. Gerrer , X. Garros et al.
2020 IEEE International Electron Devices Meeting (IEDM), Dec 2020, San Francisco, United States. pp.23.6.1-23.6.4, ⟨10.1109/IEDM13553.2020.9371938⟩
Communication dans un congrès cea-04904298 v1

Characterization and Lambert – W Function based modeling of FDSOI five-gate qubit MOS devices down to cryogenic temperatures

Edoardo Catapano , Agostino Apra , Mikael Casse , Fréd Gaillard , Silvano de Franceschi et al.
EUROSOI-ULIS, Sep 2021, Caen, France. pp.1-4, ⟨10.1109/EuroSOI-ULIS53016.2021.9560671⟩
Communication dans un congrès cea-04449211 v1

Parasitic capacitance analysis in short channel GaN MIS-HEMTs

R. Kom Kammeugne , C. Leroux , T. Mota Frutuoso , J. Cluzel , L. Vauche et al.
ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC), Sep 2021, Grenoble, France. pp.299-302, ⟨10.1109/ESSDERC53440.2021.9631820⟩
Communication dans un congrès hal-04745735 v1
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Thorough investigation of low frequency noise mechanisms in AlGaN/GaN and Al$_2$O$_3$/GaN HEMTs

R. Kom Kammeugne , Christoforos Theodorou , C. Leroux , Xavier Mescot , L. Vauche et al.
IEDM2021 - IEEE International Electron Devices Meeting, Dec 2021, San Francisco, United States. pp.39.4.1-39.4.4, ⟨10.1109/IEDM19574.2021.9720522⟩
Communication dans un congrès hal-03762149 v1
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Influence of series resistance on the experimental extraction of FinFET noise parameters

Angeliki Tataridou , Gérard Ghibaudo , Christoforos Theodorou
2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS), May 2020, Edinburgh, United Kingdom. pp.1-4, ⟨10.1109/ICMTS48187.2020.9107908⟩
Communication dans un congrès hal-02969736 v1

Integrated Variability Measurements of 28 nm FDSOI MOSFETs down to 4.2 K for Cryogenic CMOS Applications

Bruna Cardoso Paz , Loick Le Guevel , Mikael Casse , Gerard Billiot , Gaël Pillonnet et al.
2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS), May 2020, Edinburgh, United Kingdom. ⟨10.1109/ICMTS48187.2020.9107906⟩
Communication dans un congrès hal-02986756 v1

RF Performance of a Fully Integrated 3D Sequential Technology

X. Garros , J. Lacord , K. Triantopoulos , F. Andrieu , Gérard Ghibaudo et al.
2019 IEEE International Electron Devices Meeting (IEDM), Dec 2019, San Francisco, United States. pp.25.1.1-25.1.4, ⟨10.1109/IEDM19573.2019.8993512⟩
Communication dans un congrès cea-04777738 v1

Variability evaluation of 28nm FD-SOI technology at cryogenic temperatures down to 100mK for quantum computing

B. Cardoso Paz , L. Le Guevel , M. Casse , G. Billiot , G. Pillonnet et al.
2020 IEEE Symposium on VLSI Technology, Jun 2020, Honolulu, United States. ⟨10.1109/VLSITechnology18217.2020.9265034⟩
Communication dans un congrès hal-03211508 v1

28nm FDSOI CMOS Technology (FEOL and BEOL) Thermal Stability for 3D Sequential Integration: Yield and Reliability Analysis

C. Cavalcante , C. Fenouillet-Beranger , P. Batude , X. Garros , X. Federspiel et al.
2020 IEEE Symposium on VLSI Technology, Jun 2020, Honolulu, United States. pp.1-2, ⟨10.1109/VLSITechnology18217.2020.9265075⟩
Communication dans un congrès cea-04521647 v1

All-Operation-Regime Characterization and Modeling of Drain Current Variability in Junctionless and Inversion-Mode FDSOI Transistors

D. Bosch , J. Colinge , Gérard Ghibaudo , X. Garros , S. Barraud et al.
2020 IEEE Symposium on VLSI Technology, Jun 2020, Honolulu, United States. pp.1-2, ⟨10.1109/VLSITechnology18217.2020.9265036⟩
Communication dans un congrès cea-04905872 v1
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Low temperature high voltage analog devices in a 3D sequential integration

Camila Cavalcante , X. Garros , P. Batude , A. Tataridou , J. Lacord et al.
2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Aug 2020, Hsinchu, Taiwan. pp.155-156, ⟨10.1109/VLSI-TSA48913.2020.9203691⟩
Communication dans un congrès hal-02969743 v1

Poisson-Schrödinger simulation of inversion charge in FDSOI MOSFET down to 0K - Towards compact modeling for cryo CMOS application

M. Aouad , S. Martinie , F. Triozon , T. Poiroux , M. Vinet et al.
EUROSOI-ULIS 2020 - Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Sep 2020, Caen, France. pp.1-4, ⟨10.1109/EUROSOI-ULIS49407.2020.9365297⟩
Communication dans un congrès hal-04821261 v1

Investigation of nBTI degradation on GaN-on-Si E-mode MOSc-HEMT

A.G. Viey , W. Vandendaele , M.-A. Jaud , J. Cluzel , J.-P. Barnes et al.
2019 IEEE International Electron Devices Meeting (IEDM), Dec 2019, San Francisco, United States. pp.4.3.1-4.3.4, ⟨10.1109/IEDM19573.2019.8993588⟩
Communication dans un congrès cea-04777991 v1

Y-unction based methodology for accurate statistical extraction of HEMT device parameters for GaN technology

R. Kom Kammeugne , Romeo Kom Kammeugne , Charles Leroux , Jacques Cluzel , Laura Vauche et al.
EUROSOI-ULIS 2020 - Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Sep 2020, Caen, France. pp.1-4, ⟨10.1109/EUROSOI-ULIS49407.2020.9365637⟩
Communication dans un congrès cea-03167130 v1

Characterization Methodology and Physical Compact Modeling of in-Wafer Global and Local Variability

Krishna Pradeep , Thierry Poiroux , Patrick Scheer , Andre Juge , Gilles Gouget et al.
2018 IEEE International Electron Devices Meeting (IEDM), Dec 2018, San Francisco, United States. pp.17.1.1-17.1.4, ⟨10.1109/IEDM.2018.8614589⟩
Communication dans un congrès hal-02050415 v1
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Inter-tier Dynamic Coupling and RF Crosstalk in 3D Sequential Integration

Petros Sideris , J. Lugo-Alvarez , P. Batude , L. Brunet , P. Acosta-Alba et al.
2019 IEEE International Electron Devices Meeting (IEDM), Dec 2019, San Francisco, United States. pp.3.4.1-3.4.4, ⟨10.1109/IEDM19573.2019.8993493⟩
Communication dans un congrès hal-02969757 v1

Statistical Characterization and Modelling of Gate-Induced Drain Leakage Variability in Advanced FDSOI Devices

T. Karatsori , C. Cavalcante , J. Lacord , P. Batude , Christoforos Theodorou et al.
2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2019, San Jose, United States. pp.1-2, ⟨10.1109/S3S46989.2019.9320739⟩
Communication dans un congrès hal-03260930 v1

Reliability and Variability of 1S1R OxRAM-OTS for High Density Crossbar Integration

D. Alfaro Robayo , D. Deleruyelle , E. Vianello , N. Castellani , L. Ciampolini et al.
2019 IEEE International Electron Devices Meeting (IEDM), Dec 2019, San Francisco, United States. pp.35.3.1-35.3.4, ⟨10.1109/IEDM19573.2019.8993439⟩
Communication dans un congrès hal-03029486 v1

Integration of OTS based back-end selector with HfO 2 OxRAM for crossbar arrays

D. Alfaro Robayo , G. Sassine , L. Grenouillet , C. Carabasse , T. Martin et al.
2019 IEEE 11th International Memory Workshop (IMW), May 2019, Monterey, United States. pp.1-4, ⟨10.1109/IMW.2019.8739746⟩
Communication dans un congrès cea-04797602 v1

Influence of Gate Length on pBTI in GaN-on-Si E-Mode MOSc-HEMT

A.G. Viey , W. Vandendaele , Ma Jaud , R. Gwoziecki , A. Torres et al.
2019 IEEE International Reliability Physics Symposium (IRPS), Mar 2019, Monterey, United States. pp.1-6, ⟨10.1109/IRPS.2019.8720554⟩
Communication dans un congrès cea-04797646 v1

Potential of nanonets for the 3D integration of biosensors on CMOS (invited)

Mireille Mouis , Maxime Legallais , Thibauld Cazimajou , Fanny Morisot , Thuy Thi Thu Nguyen et al.
Journées Nationales Nanofils Semiconducteurs Journées Nationales Nanofils Semiconducteurs, Lyon, 13-15 Nov. 2019, Nov 2019, Lyon, France
Communication dans un congrès hal-02400730 v1

Series Resistance Effects on the Back-Gate Biased Operation of Junctionless Transistors (poster)

Daeyoung Jeon , So Jeong Park , Mireille Mouis , Sylvain Barraud , Kim Gyu-Tae et al.
2019 Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS), Apr 2019, Grenoble, France. Actes pp. 36-37, ⟨10.1109/EUROSOI-ULIS45800.2019.9041921⟩
Communication dans un congrès hal-02400587 v1

Potential of semiconducting nanonets for the 3D CMOS integration of biosensors

Mireille Mouis , Maxime Legallais , Thibauld Cazimajou , Fanny Morisot , T.T.T. Nguyên et al.
J2N : journées nationales des nanofils semiconducteurs, Nov 2019, Lyon, France
Communication dans un congrès hal-04756792 v1

Effect of wet treatments on the electrical properties of Al2O3/GeSn MOS capacitors

B. Salem , M. A. Mahjoub , T. Haffner , Y. Guerfi , S. Labau et al.
EMRS Fall Meeting, 2019, EMRS Fall Meeting 2019 (Varsovie, Pologne), Poland
Communication dans un congrès hal-02332929 v1

Development of X-ray Photoelectron Spectroscopy under bias and its application to determine band-energies and dipoles in the HKMG stack

Pushpendra Kumar , Charles Leroux , Florian Domengie , Eugenie Martinez , Virginie Loup et al.
2018 IEEE International Electron Devices Meeting (IEDM), Dec 2018, San Francisco, United States. pp.17.6.1-17.6.4, ⟨10.1109/IEDM.2018.8614554⟩
Communication dans un congrès cea-04805567 v1
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Low-frequency Noise and Random Telegraph Noise in Nanoscale Devices: Modeling and Impact on Circuit Operation

Christoforos Theodorou , Gérard Ghibaudo
25th International Conference on Noise and Fluctuations ICNF 2019, EPFL, Jun 2019, Grenoble, France
Communication dans un congrès hal-02969721 v1

Low Temperature Electrical Characteristics of Si Nanonet Field-Effect Transistors

Thibauld Cazimajou , Thuy Thi Thu Nguyen , Maxime Legallais , Mireille Mouis , Céline Ternon et al.
2019 Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS), Apr 2019, Grenoble, France. Actes pp. 132-133
Communication dans un congrès hal-02400540 v1

On the influence of gate length on pBTI in GaN-on-Si E-mode MOSc-HEMT

Abygael Viey , William Vandendaele , Marie-Anne Jaud , Romain Gwoziecki , Alphonse Torres et al.
2019 IEEE International Reliability Physics Symposium (IRPS), Mar 2019, Monterey, United States. pp.7A.1 session WB GaN
Communication dans un congrès hal-02052343 v1
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A 4-Terminal Method for Oxide and Semiconductor Trap Characterization in FDSOI MOSFETs

Hung Chi Han , Christoforos Theodorou , Gérard Ghibaudo
25th International Conference on Noise and Fluctuations ICNF 2019, EPFL, Jun 2019, Neuchatel, Switzerland
Communication dans un congrès hal-02963338 v1

Characterization and modelling of nanonet-based field-effect transistors in the presence of percolating effects

Thibauld Cazimajou , Maxime Legallais , Thuy Thi Thu Nguyen , Mireille Mouis , Céline Ternon et al.
Nanoelectronics and Smart Systems Technologies for Future Applications (Joint SiNano-NEREID-Nanonets2Sense-Convergence Workshop at ESSDERC 2018), Sep 2018, Dresden, Germany
Communication dans un congrès hal-02401189 v1

Static and Low Frequency Noise Characterization of InGaAs MOSFETs and FinFETs on Insulator

T. Karatsori , K. Bennamane , C. Theodorou , L. Czornomaz , J. Fompeyrine et al.
2018 ESSDERC - 48th European Solid-State Device Research Conference (ESSDERC), Sep 2018, Dresden, Germany. pp.166-169, ⟨10.1109/ESSDERC.2018.8486851⟩
Communication dans un congrès hal-02002326 v1

Performance & reliability of 3D architectures (πfet, Finfet, Ωfet)

A. Laurent , X. Garros , S. Barraud , J. Pelloux-Prayer , M. Cassé et al.
2018 IEEE International Reliability Physics Symposium (IRPS), Mar 2018, Burlingame, United States. pp.6F.3-1-6F.3-6, ⟨10.1109/IRPS.2018.8353647⟩
Communication dans un congrès hal-02050279 v1

Analysis and modelling of wafer level process variability in advanced FD-SOI devices using split C-V and gate current data

Krishna Pradeep , Theano Karatsori , Thierry Poiroux , Andre Juge , Patrick Scheer et al.
Modeling of Systems and Parameter Extraction Working (MOS-AK), ESSDERC/ESSCIRC, Sep 2018, Dresden, Germany
Communication dans un congrès hal-02051931 v1
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Doping profile extraction in thin SOI films: application to A2RAM

F Tcheme Wakam , J. Lacord , M. Bawedin , S. Martinie , S. Cristoloveanu et al.
2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Mar 2018, Granada, Spain. pp.1-4, ⟨10.1109/ULIS.2018.8354339⟩
Communication dans un congrès cea-02270895 v1

Performance and Reliability of a Fully Integrated 3D Sequential Technology

A. Tsiara , X. Garros , L. Brunet , P. Batude , C. Fenouillet-Beranger et al.
2018 IEEE Symposium on VLSI Technology, Jun 2018, Honolulu, United States. pp.75-76, ⟨10.1109/VLSIT.2018.8510625⟩
Communication dans un congrès hal-02050384 v1

Low-frequency noise in surface-treated AlGaN/GaN HFETs

Ki-Sik Im , Jun-Hyeok Lee , Jung-Hee Lee , Christoforos Theodorou , Gérard Ghibaudo et al.
2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Mar 2018, Granada, Spain. pp.77-80, ⟨10.1109/ULIS.2018.8354738⟩
Communication dans un congrès hal-02002314 v1

Impact of low-temperature CoolcubeTM process on the performance of FDSOI Tunnel FETs

C. Diaz Llorente , Jean-Pierre Colinge , Maud Vinet , Christoforos Theodorou , Sorin Cristoloveanu, et al.
2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2018, San Francisco, United States. pp.5.4, ⟨10.1109/S3S.2018.8640190⟩
Communication dans un congrès hal-02010233 v1

A self-Contained Defect-Aware Module for Realistic Simulations of LFN, RTN and Time-Dependent Variability in FD-SOI Devices and Circuits

Christoforos Theodorou , Gérard Ghibaudo
2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2018, San Francisco, United States. pp.20.3, ⟨10.1109/S3S.2018.8640191⟩
Communication dans un congrès hal-02010259 v1

Analytical expression of top surface charge sensitivity in fully depleted semiconductor on insulator MOS transistor

Gérard Ghibaudo , Georges Pananakakis
International Workshop on Semi-conducting Nanometerials for Health, Environment and Security Applications, Nov 2018, Grenoble, France
Communication dans un congrès hal-02052299 v1

Detailed analysis of frequency-dependent impedance in pseudo-MOSFET on thin SOI film

S. Sato , Y. Omura , G. Ghibaudo , L. Benea , S. Cristoloveanu
2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Mar 2018, Granada, Spain. pp.221-224, ⟨10.1109/ULIS.2018.8354774⟩
Communication dans un congrès hal-02007662 v1

Stability and in depth characterization of low-voltage organic thin film transistors based on low-k/high-k bilayer dielectric

Alexandre Gaïtis , Micaël Charbonneau , Gérard Ghibaudo , R. Coppard , Christophe Serbutoviez
Innovations in large-Area Electronics Conference (InnoLAE), Jan 2018, Hinxton, United Kingdom
Communication dans un congrès hal-02051882 v1

Innovative tunnel FET architectures

Carlos Diaz Llorente , Sébastien Martinie , Sorin Cristoloveanu , Jean-Pierre Colinge , Cyrille Le Royer et al.
2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Mar 2018, Granada, Spain. pp.25-28, ⟨10.1109/ULIS.2018.8354725⟩
Communication dans un congrès hal-02007301 v1

Experimental and theoretical investigation of RRAM endurance statistical behavior

D. Alfaro Robayo , G. Sassine , Quentin Rafhay , Gérard Ghibaudo , Gabriel Molas et al.
49th IEEE Semiconductor Interface Specialists Conference (SISC), IEEE, Dec 2018, San Diego, United States. pp.13.2
Communication dans un congrès hal-02052290 v1

Finite element simulation of 2D percolating silicon-nanonet field-effect transistor

T. Cazimajou , M. Mouis , G. Ghibaudo
2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Mar 2018, Granada, Spain. pp.165-168, ⟨10.1109/ULIS.2018.8354760⟩
Communication dans un congrès hal-02016613 v1

Impact of CMOS TiN Metal Gate Process on Microstructure and Its Correlation with Electrical Properties

Pushpendra Kumar , Florian Domengie , Charles Leroux , Patrice Gergaud , Gérard Ghibaudo
2018 MRS Fall Meeting & Exhibit: Symposium PM07—Plasma-Based Synthesis, Processing and Characterization of Novel Materials for Advanced Applications, M. Sankaran, D. Mariotti, T. Nozaki, C.C. Wu, Nov 2018, Boston, United States
Communication dans un congrès hal-02052429 v1

Investigation of the role of back barrier depth and conductivity on the dynamic Ron and substrate ramping behavior of GaN Schottky diodes on silicon substrate

Thomas Lorin , W. Vandendaele , Romain Gwoziecki , C. Gillot , J. Biscarrat et al.
20th European Conference on Power Electronics and Applications (EPE'18 ECCE Europe), Sep 2018, Riga, Latvia
Communication dans un congrès hal-02050406 v1

Analysis of Gate Current Wafer Level Variability in Advanced FD-SOI MOSFETs

Krishna Pradeep , T. Karatsori , T. Poiroux , A. Juge , P. Scheer et al.
2018 ESSDERC - 48th European Solid-State Device Research Conference (ESSDERC), Sep 2018, Dresden, Germany. pp.242-245, ⟨10.1109/ESSDERC.2018.8486847⟩
Communication dans un congrès hal-02065295 v1

Statistical analysis of CBRAM endurance

D. Alfaro Robayo , C. Nail , G. Sassine , J. F Nodin , M. C. Bernard et al.
2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), Apr 2018, Hsinchu, Taiwan. pp.115-116, ⟨10.1109/VLSI-TSA.2018.8403856⟩
Communication dans un congrès hal-02050364 v1

New insights on device level TDDB at GHz speed in advanced CMOS nodes

M. Arabi , X. Federspiel , F. Cacho , M. Rafik , A. Nguyen et al.
2018 IEEE International Integrated Reliability Workshop, Oct 2018, Fallen Leaf Lake, United States
Communication dans un congrès hal-02052398 v1

High temperature investigation of electron transport properties in 2DEG AlGaN/AlN/GaN MIS-HEMT wafer adapted from four-point probe technique

Iliass Nifa , Charles Leroux , Alphonse Torres , Matthew Charles , Jacques Cluzel et al.
20th Conference of Insulating Films on Semiconductors (INFOS 2017), Jun 2017, Potsdam, Germany
Communication dans un congrès hal-02009848 v1

Sensitivity analysis of C-V global variability for 28 nm FD-SOI

Krishna Pradeep , Thierry Poiroux , Patrick Scheer , Gilles Gouget , Andre Juge et al.
EUROSOI-ULIS - 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Apr 2017, Athens, Greece. pp.132-135, ⟨10.1109/ULIS.2017.7962582⟩
Communication dans un congrès hal-02050213 v1

Systematic evaluation of the split C-V based parameter extraction methodologies for 28 nm FD-SOI

Krishna Pradeep , Gilles Gouget , Thierry Poiroux , Patrick Scheer , Andre Juge et al.
2017 International Conference of Microelectronic Test Structures (ICMTS), Mar 2017, Grenoble, France. pp.59-63, ⟨10.1109/ICMTS.2017.7954267⟩
Communication dans un congrès hal-02050209 v1

Effect of La and Al addition used for threshold voltage shift on the BTI reliability of HfON-based FDSOI MOSFETs

Pushpendra Kumar , Charles Leroux , Alain Toffoli , Giovanni Romano , Xavier Garros et al.
2017 IEEE International Reliability Physics Symposium (IRPS), Apr 2017, Monterey, United States. pp.2B-2.1-2B-2.7, ⟨10.1109/IRPS.2017.7936258⟩
Communication dans un congrès hal-02050203 v1

Self-heating assessment and cold current extraction in FDSOI MOSFETs

K. Triantopoulos , M. Cassé , L. Brunet , P. Batude , C. Fenouillet-Beranger et al.
2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2017, Burlingame, United States. pp.6.4, ⟨10.1109/S3S.2017.8309239⟩
Communication dans un congrès hal-02050233 v1

Towards 500°C SPER activated devices for 3D sequential integration

J. Micout , B. Sklenard , P. Batude , Rémy Berthelon , Quentin Rafhay et al.
2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2017, Burlingame, CA, United States. pp.24.3, ⟨10.1109/S3S.2017.8309220⟩
Communication dans un congrès hal-01959113 v1

(Invited) Dipoles in Gate-Stack/FDSOI Structure

Gilles Reimbold , Charles Leroux , Carlos Suarez Segovia , Pushpendra Kumar , Xavier Garros et al.
232nd ECS Meeting: 15th Symposium on Seminconductors, Dielectrics and Metals for Nanoelectronics, D. Misra, S. De Gendt, M. Houssa K. Kita and D. Landheer, Oct 2017, Washington DC, United States
Communication dans un congrès hal-02051924 v1

Comparison of RTN and TDDS methods for trap extraction in trigate nanowires

A. Tsiara , X. Garros , A. Vernhet , S. Barraud , O. Faynot et al.
2017 IEEE International Reliability Physics Symposium (IRPS), Apr 2017, Monterey, United States. pp.3E-4.1-3E-4.6, ⟨10.1109/IRPS.2017.7936297⟩
Communication dans un congrès hal-02050205 v1

A microsecond time resolved current collapse test setup dedicated to GaN-based Schottky diode characterization

T. Lorin , W. van den Daele , C. Gillot , M. Charles , J. Biscarrat et al.
2017 International Conference of Microelectronic Test Structures (ICMTS), Mar 2017, Grenoble, France. pp.150-153, ⟨10.1109/ICMTS.2017.7954286⟩
Communication dans un congrès hal-02050207 v1

High performance low temperature FinFET with DSPER, gate last and Self Aligned Contact for 3D sequential mtegration

J. Micout , V. Lapras , P. Batude , C. Fenouillet-Beranger , J. Lacord et al.
2017 IEEE International Electron Devices Meeting (IEDM), Dec 2017, San Francisco, United States. pp.32.2.1-32.2.4, ⟨10.1109/IEDM.2017.8268484⟩
Communication dans un congrès hal-01959097 v1

New insight on the geometry dependence of BTI in 3D technologies based on experiments and modeling

Xavier Garros , Antoine Laurent , Sylvain Barraud , J. Lacord , Olivier Faynot et al.
2017 IEEE Symposium on VLSI Technology, Jun 2017, Kyoto, Japan. pp.T134-T135, ⟨10.23919/VLSIT.2017.7998152⟩
Communication dans un congrès hal-02050216 v1

Ultra-low power 1T-DRAM in FDSOI technology

H. El Dirani , M.S. Parihar , J. Lacord , S. Martinie , J-Ch. Barbe et al.
20th International Conference on Insulating Films on Semiconductors (INFOS 2017), Jun 2017, Potsdam, Germany
Communication dans un congrès hal-02071682 v1

First SOI Tunnel FETs with low-temperature process

C. Diaz Llorente , C. Le Royer , C-M. Lu , P. Batude , C. Fenouillet-Beranger et al.
2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Apr 2017, Athens, Greece. pp.9-12, ⟨10.1109/ULIS.2017.7962579⟩
Communication dans un congrès hal-02007188 v1

Thermal effects in 3D sequential technology

K. Triantopoulos , M. Cassé , L. Brunet , P. Batude , C. Fenouillet-Beranger et al.
2017 IEEE International Electron Devices Meeting (IEDM), Dec 2017, San Francisco, United States. pp.7.6.1-7.6.4, ⟨10.1109/IEDM.2017.8268348⟩
Communication dans un congrès hal-02050229 v1
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Precise EOT regrowth extraction enabling performance analysis of Low Temperature Extension First devices

Jessy Micout , Quentin Rafhay , Xavier Garros , Mikael Cassé , Jean Coignus et al.
2017 ESSDERC - 47th European Solid-State Device Research Conference, Sep 2017, Leuven, Belgium. pp.144-147, ⟨10.1109/ESSDERC.2017.8066612⟩
Communication dans un congrès cea-01525266 v1

Electrical characterization of percolating silicon nanonet FETs for sensing applications

T. Cazimajou , M. Legallais , M. Mouis , C. Ternon , B. Salem et al.
2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Apr 2017, Athens, Greece. pp.23-26, ⟨10.1109/ULIS.2017.7962591⟩
Communication dans un congrès hal-01929333 v1

Low temperature measurements on organic thin film transistors

Clara Haddad , Stéphanie Jacob , Micaël Charbonneau , Xavier Mescot , Amélie Revaux et al.
2017 E-MRS Spring Meeting: Symposium L:New materials for organic electronics: from synthesis to processing, characterization and device physics, C. Muller, E. Von Hauf, M. Caironi, M. Sommer, May 2017, Strasbourg, France
Communication dans un congrès hal-02072323 v1

Impact of strain on access resistance in planar and nanowire CMOS devices

Rémy Berthelon , F. Andneu , F. Triozon , M. Cassé , L. Bourdet et al.
2017 IEEE Symposium on VLSI Technology, Jun 2017, Kyoto, Japan. pp.T224-T225, ⟨10.23919/VLSIT.2017.7998180⟩
Communication dans un congrès hal-02050220 v1

Assessment of GeSn surface wet treatment for prior to Atomic Layer Deposition of High-k Dielectrics

M.A. Mahjoub , T. Haffner , J. Aubin , J.M. Hartmann , G. Ghibaudo et al.
2017 MRS Fall Meeting & Exhibit: Symposium PM03 : Interfaces and Interface Engineering in Inorganic Materials, Y. Chen, E. Bitzek, M.T. Perez Prado, D. Rowenhorst, Nov 2017, Boston, United States
Communication dans un congrès hal-01929247 v1

Reliability analysis on low temperature gate stack process steps for 3D sequential integration

A. Tsiara , X. Garros , C.-M.V. Lu , C. Fenouillet-Beranger , P. Batude et al.
2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2017, Burlingame, United States. pp.24.2, ⟨10.1109/S3S.2017.8309219⟩
Communication dans un congrès hal-02050231 v1

Statistical characterization and modeling of drain current local and global variability in 14 nm bulk FinFETs

T. Karatsori , C. Theodorou , R. Lavieville , T. Chiarella , J. Mitard et al.
2017 International Conference of Microelectronic Test Structures (ICMTS), Mar 2017, Grenoble, France. pp.41-45, ⟨10.1109/ICMTS.2017.7954263⟩
Communication dans un congrès hal-02002304 v1

Novel C-V measurements based method for the extraction of GaN buffer layer residual doping level in HEMT

Iliass Nifa , Charles Leroux , Alphonse Torres , Charles Charles , Gilles Reimbold et al.
2017 International Conference of Microelectronic Test Structures (ICMTS), Mar 2017, Grenoble, France. pp.154-157, ⟨10.1109/ICMTS.2017.7954287⟩
Communication dans un congrès hal-02009829 v1

Growth and integration of group IV nanowires for Tunnel FET devices

B. Salem , V. Brouzet , P. Periwal , F. Bassani , P. Gentile et al.
Collaborative Conference on Materials Research (CCMR 2017), Jun 2017, Jeju island, South Korea
Communication dans un congrès hal-01891328 v1

Static and low frequency noise characterization of ultra-thin body InAs MOSFETs

T.A. Karatsori , M. Pastorek , Christoforos Theodorou , A. Fadjie , Nicolas Wichmann et al.
2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Apr 2017, Athens, Greece. pp.105-108, ⟨10.1109/ULIS.2017.7962613⟩
Communication dans un congrès hal-02050212 v1

Impact of access resistance on New-Y function methodology for MOSFET parameter extraction in advanced FD-SOI technology

Jean-Baptiste Henry , Antoine Cros , Julien Rosa , Quentin Rafhay , Gérard Ghibaudo
2017 International Conference of Microelectronic Test Structures (ICMTS), Mar 2017, Grenoble, France. pp.68-72, ⟨10.1109/ICMTS.2017.7954269⟩
Communication dans un congrès hal-01959125 v1

Statistical low-frequency noise characterization in sub-15 nm Si/SiGe nanowire Trigate pMOSFETs

Christoforos Theodorou , Romain Lavieville , Theano Karatsori , Sylvain Barraud , Charalabos Dimitriadis et al.
2017 International Conference of Microelectronic Test Structures (ICMTS), Mar 2017, Grenoble, France. pp.141-145, ⟨10.1109/ICMTS.2017.7954284⟩
Communication dans un congrès hal-02002297 v1

Optimisation of the catalytic system towards well-defined donor-acceptor semiconductor polymers

Theodoros Oproglidis , Theano Karatsori , Sylvain Barraud , Gérard Ghibaudo , Charalabos Dimitriadis
European Congress and Exhibit on Advanced Materials and Processes (EUROMAT 2017), symposium C.11 Processes and Materials for Nanoelectronics, D. Tsoukalas, M. Fanciulli and A. Claverie, Sep 2017, Thessalonique, Greece
Communication dans un congrès hal-02068513 v1

Noise-induced dynamic variability in nano-scale CMOS SRAM cells

Christoforos Theodorou , Mouenes Fadlallah , Xavier Garros , Charalabos Dimitriadis , Gérard Ghibaudo
2016 ESSDERC - 46th European Solid-State Device Research Conference, Sep 2016, Lausanne, Switzerland. pp.256-259, ⟨10.1109/ESSDERC.2016.7599634⟩
Communication dans un congrès hal-02002272 v1

Impact of low thermal processes on reliability of HK/MG stacks

Artemisia Tsiara , Xavier Garros , C-M. V. Lu , Claire Fenouillet-Beranger , Gérard Ghibaudo
19th Workshop on Dielectrics in Microelectronics (WoDIM), Jun 2016, Catania, Italy
Communication dans un congrès hal-02051859 v1

RAPIDO Testing of Assisted Write and Read operations for Ultra-Low Power SRAMs

Joseph Nguyen , D. Turgis , David Bonciani , Brice Lhomme , Yann Carminati et al.
W07 International Workshop on Emerging Memory Solutions, Mar 2016, Dresden, Germany
Communication dans un congrès hal-02051768 v1

Low Temperature Characterization of Hole Mobility in Sub-14nm Gate Length Si 0.7 Ge 0.3 Tri-Gate pMOSFETs

R. Lavieville , C. Le Royer , S. Barraud , G. Ghibaudo
12th International Workshop on Low Temperature Electronics (WOLTE-12), Sep 2016, Tempe, United States
Communication dans un congrès hal-02072793 v1

High temperature investigation of electron transport properties in 2DEG AlGaN/AlN/GaN MIS-HEMT

Iliass Nifa , Charles Leroux , Alphonse Torres , Matthew Charles , Denis Blachier et al.
19th Workshop on Dielectrics in Microelectronics (WoDIM), Jun 2016, Catania, Italy
Communication dans un congrès hal-02009860 v1

Improved analysis of NBTI relaxation behavior based on fast I–V measurement

D. Nouguier , C. Ndiaye , G. Ghibaudo , X. Federspiel , M. Rafik et al.
2016 IEEE International Integrated Reliability Workshop (IIRW), Oct 2016, South Lake Tahoe, United States. pp.83-86, ⟨10.1109/IIRW.2016.7904908⟩
Communication dans un congrès hal-02050198 v1

High performance CMOS FDSOI devices activated at low temperature

L. Pasini , P. Batude , J. Lacord , M. Cassé , B. Mathieu et al.
2016 IEEE Symposium on VLSI Technology, Jun 2016, Honolulu, United States. ⟨10.1109/VLSIT.2016.7573407⟩
Communication dans un congrès hal-01730659 v1

Hot carrier degradation in nanowire transistors: Physical mechanisms, width dependence and impact of Self-Heating

A. Laurent , X. Garros , S. Barraud , G. Mariniello , G. Reimbold et al.
2016 IEEE Symposium on VLSI Technology, Jun 2016, Honolulu, United States. pp.39-40, ⟨10.1109/VLSIT.2016.7573374⟩
Communication dans un congrès hal-02050194 v1

Doping Solutions for Advanced CMOS high-k / metal Gate Engineering

Gilles Reimbold , C. Suarez-Segovia , Charles Leroux , Florian Domengie , Philippe Blaise et al.
BIT’s 2nd Annual World Congress of Smart Materials-2016, Mar 2016, Singapore, Singapore
Communication dans un congrès hal-02051782 v1

Characterization and modeling of NBTI permanent and recoverable components variability

D. Nouguier , G. Ghibaudo , X. Federspiel , M. Rafik , D. Roy
2016 IEEE International Reliability Physics Symposium (IRPS), Apr 2016, Pasadena, United States. pp.XT-08-1-XT-08-6, ⟨10.1109/IRPS.2016.7574650⟩
Communication dans un congrès hal-02050196 v1

Drain current local variability from linear to saturation region in 28nm bulk NMOSFETs

T. Karatsori , C. Theodorou , S. Haendler , C. Dimitriadis , G. Ghibaudo
2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Jan 2016, Vienna, Austria. pp.92-95, ⟨10.1109/ULIS.2016.7440060⟩
Communication dans un congrès hal-02002291 v1

New access resistance extraction methodology for 14nm FD-SOI technology

Jean-Baptiste Henry , Antoine Cros , Julien Rosa , Quentin Rafhay , Gérard Ghibaudo
2016 International Conference on Microelectronic Test Structures (ICMTS), Mar 2016, Yokohama, Japan. pp.70-75, ⟨10.1109/ICMTS.2016.7476177⟩
Communication dans un congrès hal-01959130 v1

Vertical CBRAM (V-CBRAM): From Experimental Data to Design Perspectives

G. Piccolboni , M. Parise , G. Molas , A. Levisse , Jean-Michel Portal et al.
2016 IEEE 8th International Memory Workshop (IMW), May 2016, Paris, France. ⟨10.1109/IMW.2016.7495296⟩
Communication dans un congrès hal-01451884 v1

Challenges in electrical characterization of nano devices

Gérard Ghibaudo
NEREID Domain Workshop: Task "Nanoscale FETs", F. Balestra and Anda Mocuta, Sinano Summer School 2016, Oct 2016, Bertinoro, Italy
Communication dans un congrès hal-02078235 v1

MBE-grown oxides-based resistive switching memristive devices

Marie Minvielle , N. Najjari , G. Sassine , C. Botella , Gérard Ghibaudo et al.
19th Workshop on Dielectrics in Microelectronics (WoDIM), Jun 2016, Catania, Italy
Communication dans un congrès hal-02051846 v1

Hot carrier stress: Aging modeling and analysis of defect location

G. Torrente , X. Federspiel , D. Rideau , F. Monsieur , C. Tavernier et al.
2016 IEEE International Reliability Physics Symposium (IRPS), Apr 2016, Pasadena, United States. pp.5A-4-1-5A-4-6, ⟨10.1109/IRPS.2016.7574546⟩
Communication dans un congrès hal-02050195 v1

RAPIDO Testing and Modeling of Assisted Write and Read Operations for SRAMs

Joseph Nguyen , David Turgis , David Bonciani , Brice Lhomme , Yann Carminati et al.
2016 IEEE 25th North Atlantic Test Workshop (NATW), May 2016, Providence, United States. pp.28-33, ⟨10.1109/NATW.2016.14⟩
Communication dans un congrès hal-02050193 v1

Robust EOT and effective work function extraction for 14 nm node FDSOI technology

B. Mohamad , C. Leroux , D. Rideau , M. Haond , G. Reimbold et al.
2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Jan 2016, Vienna, Austria. pp.135-138, ⟨10.1109/ULIS.2016.7440071⟩
Communication dans un congrès hal-02050084 v1

Understanding RRAM endurance, retention and window margin trade-off using experimental results and simulations

C. Nail , G. Molas , P. Blaise , G. Piccolboni , B. Sklenard et al.
2016 IEEE International Electron Devices Meeting (IEDM), Dec 2016, San Francisco, United States. pp.4.5.1-4.5.4, ⟨10.1109/IEDM.2016.7838346⟩
Communication dans un congrès hal-01882789 v1

Statistical characterization of drain current local and global variability in sub 15nm Si/SiGe Trigate pMOSFETs

R. Lavieville , T. Karatsori , C. Theodorou , S. Barraud , C. Dimitriadis et al.
2016 ESSDERC - 46th European Solid-State Device Research Conference, Sep 2016, Lausanne, Switzerland. pp.142-145, ⟨10.1109/ESSDERC.2016.7599607⟩
Communication dans un congrès hal-02002267 v1

Electrical characterization of FDSOI CMOS devices

G. Ghibaudo
2016 ESSDERC - 46th European Solid-State Device Research Conference, Sep 2016, Lausanne, Switzerland. pp.135-141, ⟨10.1109/ESSDERC.2016.7599606⟩
Communication dans un congrès hal-02050197 v1

Full front and back split C-V characterization of CMOS devices from 14nm node FDSOI technology

B. Mohamad , G. Ghibaudo , C. Leroux , E. Josse , G. Reimbold
2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2015, Rohnert Park, United States. pp.9a.4, ⟨10.1109/S3S.2015.7333546⟩
Communication dans un congrès hal-02049810 v1

Comparison between recoverable and permanent NBTI variability components

D. Nouguier , M. Rafik , X. Federspiel , G. Ghibaudo
2015 IEEE International Integrated Reliability Workshop (IIRW), Oct 2015, South Lake Tahoe, United States. pp.87-90, ⟨10.1109/IIRW.2015.7437074⟩
Communication dans un congrès hal-02049829 v1

Effective work function engineering by sacrificial lanthanum diffusion on HfON-based 14 nm NFET devices

Carlos Suarez-Segovia , Charles Leroux , Florian Domengie , Karen Dabertrand , Vincent Joseph et al.
2015 ESSDERC - 45th European Solid-State Device Research Conference, Sep 2015, Graz, Austria. pp.246-249, ⟨10.1109/ESSDERC.2015.7324760⟩
Communication dans un congrès hal-02049792 v1

Quantum simulation of mobility and current enhancement in sub-14nm strained SiGe FD-pMOSFETs

Marco G. Pala , Barbara de Salvo , P. Morin , Gérard Ghibaudo
GRDi CNRS Mecano: Mechanical Issues for Advanced Electron Devices Workshop, M. Mouis, O. Thomas, E. Zschech, C. Paitel, Jun 2015, Grenoble, France
Communication dans un congrès hal-02068476 v1

Influence of epitaxy and gate deposition process on Ron resistance of AlGaN/GaN-on-Si HEMT

J. Lehmann , C. Leroux , M. Charles , A. Torres , E. Morvan et al.
2015 27th IEEE International Symposium on Power Semiconductor Devices & IC's (ISPSD), May 2015, Hong Kong, China. pp.261-264, ⟨10.1109/ISPSD.2015.7123439⟩
Communication dans un congrès hal-02009897 v1

Analysis of the Resistance Drift of Polycrystalline Phase-Change Materials by Low Frequency Noise Measurementtration

Sarra Souiki Souiki-Figuigui , Véronique Sousa , Gérard Ghibaudo , Gabriele Navarro , Martin Coué et al.
2015 MRS Spring Meeting & Exhibit: Symposium Y: Phase-Change Materials for Data Storage, Cognitive Processing and Photonics Applications, R. Agarwal, H.Y. Cheng, R. Mazzarello, R. Simpson, Apr 2015, San Francisco, United States
Communication dans un congrès cea-02051740 v1

Quasi-static capacitance measurements in pseudo-MOSFET configuration for D<inf>it</inf> extraction in SOI wafers

L. Pirro , I. Ionica , X. Mescot , S. Cristoloveanu , G. Ghibaudo et al.
2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Jan 2015, Bologna, Italy. pp.249-252, ⟨10.1109/ULIS.2015.7063820⟩
Communication dans un congrès hal-02004087 v1

Physical understanding of low frequency degradation of NMOS TDDB in High-k metal gate stack-based technology. Implication on lifetime assessment

A. Bezza , M. Rafik , D. Roy , X. Federspiel , P. Mora et al.
2015 IEEE International Reliability Physics Symposium (IRPS), Apr 2015, Monterey, United States. pp.5A.5.1-5A.5.5, ⟨10.1109/IRPS.2015.7112740⟩
Communication dans un congrès hal-02049599 v1

New LFN and RTN analysis methodology in 28 and 14nm FD-SOI MOSFETs

Christoforos Theodorou , Eleftherios Ioannidis , Sebastien Haendler , Nicolas Planes , Emmanuel Josse et al.
2015 IEEE International Reliability Physics Symposium (IRPS), Apr 2015, Monterey, United States. pp.XT.1.1-XT.1.6, ⟨10.1109/IRPS.2015.7112833⟩
Communication dans un congrès hal-02002118 v1

Full front and back gate voltage range method for the parameter extraction of advanced FDSOI CMOS devices

T. Karatsori , C. Theodorou , E. Ioannidis , S. Haendler , E. Josse et al.
2015 73rd Annual Device Research Conference (DRC), Jun 2015, Columbus, United States. pp.115-116, ⟨10.1109/DRC.2015.7175582⟩
Communication dans un congrès hal-02001968 v1

Investigation of Ta2O5-Based Hybrid OXRAM-CBRAM Including a Ti Layer to Generate Oxygen Vacancies.

G. Piccolboni , A. El Kacimi , G. Molas , A. Marty , R. Gassilloud et al.
EMRS, 2015, 2015, Lille, France
Communication dans un congrès hal-01877911 v1

Hot carrier degradation modeling of short-channel n-FinFETs

I. Messaris , N. Fasarakis , T. Karatsori , A. Tsormpatzoglou , G. Ghibaudo et al.
2015 73rd Annual Device Research Conference (DRC), Jun 2015, Columbus, United States. pp.183-184, ⟨10.1109/DRC.2015.7175617⟩
Communication dans un congrès hal-02049708 v1

Advanced 1T1R test vehicle for RRAM nanosecond-range switching-time resolution and reliability assessment

Clement Nguyen , Carlo Cagli , Elisa Vianello , Alain Persico , Gabriel Molas et al.
2015 IEEE International Integrated Reliability Workshop (IIRW), Oct 2015, South Lake Tahoe, CA, United States. pp.17-20, ⟨10.1109/IIRW.2015.7437059⟩
Communication dans un congrès hal-01959140 v1

High performance low temperature activated devices and optimization guidelines for 3D VLSI integration of FD, TriGate, FinFET on insulator

L. Pasini , P. Batude , M. Cassé , B. Mathieu , B. Sklenard et al.
2015 IEEE Symposium on VLSI Technology, Jun 2015, Kyoto, Japan. pp.T50-T51, ⟨10.1109/VLSIT.2015.7223699⟩
Communication dans un congrès hal-02049770 v1

Effective work function modulation by sacrificial aluminium on HfON-based 14nm devices

Carlos Suarez-Segovia , Charles Leroux , P. Caubet , Florian Domengie , Gilles Reimbold et al.
19th Conference on Insulating Films on semiconductors (INFOS), Jun 2015, Udine, Italy. pp.175-176
Communication dans un congrès hal-02051742 v1

Hot carrier degradation modeling of short-channel n-FinFETs suitable for circuit applications

I. Messaris , T.A. Karatsori , Nikolaos Fasarakis , S. Nikolaidis , Gérard Ghibaudo et al.
4th International Conference on Modern Circuits and Systems Technologies (MOCAST), organized by the FP7 Marie Curie IAPP Project FTK, the Greek National projects NANOTRIM and NANOMOS and the Micro & Nano Scientific Society, May 2015, Thessaloniki, Greece
Communication dans un congrès hal-02051771 v1

Hot carrier degradation mechanisms of short-channel FDSOI n-MOSFETs

T. Karatsori , C. Theodorou , S. Haendler , N. Planes , G. Ghibaudo et al.
2015 73rd Annual Device Research Conference (DRC), Jun 2015, Columbus, United States. pp.163-164, ⟨10.1109/DRC.2015.7175607⟩
Communication dans un congrès hal-02001979 v1

Modeling of OxRAM variability from low to high resistance state using a stochastic trap assisted tunneling-based resistor network

Daniele Garbin , Quentin Rafhay , Elisa Vianello , Simon Jeannot , Philippe Candelier et al.
2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Jan 2015, Bologna, Italy. pp.125, ⟨10.1109/ULIS.2015.7063789⟩
Communication dans un congrès hal-01959186 v1

Fabrication and electrical characterisations of Si/Si1-xGex nanowires Tunnel FET device : impact of Germanium concentration

Virginie Brouzet , Bassem Salem , Priyanka Periwal , Thierry Baron , Franck Bassani et al.
2015 MRS Spring Meeting & Exhibit: Symposium S: Semiconductor Nanowires and Devices for Advanced Applications, J. Arbiol, K. Dick Thelander, M. Filler, A. Fontcuberta, Q. Xiong, Apr 2015, San Francisco, United States
Communication dans un congrès cea-01998244 v1

Fabrication and Electrical Characterization of Si and Si/SiGe Nanowires Tunnel Field-Effect-Transistor

Virginie Brouzet , Bassem Salem , P Periwal. , Guillaume Rosaz , Thierry Baron et al.
4èmes Journées Nationales sur les Technologies Emergentes en Micro-Nanofabrication (JNTE 2015), Nov 2015, Ecully, France
Communication dans un congrès hal-02072677 v1
Image document

Investigation of the potentialities of Vertical Resistive RAM (VRRAM) for neuromorphic applications

G. Piccolboni , G. Molas , M. Portal , R. Coquand , Marc Bocquet et al.
2015 IEEE International Electron Devices Meeting (IEDM), Dec 2015, Washington, United States. pp.17.2.1-17.2.4, ⟨10.1109/IEDM.2015.7409717⟩
Communication dans un congrès hal-01804658 v1

On the impact of OxRAM-based synapses variability on convolutional neural networks performance

D. Garbin , E. Vianello , O. Bichler , M. Azzaz , Q. Rafhay et al.
2015 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH´15), Jul 2015, Boston, MA, United States. pp.193-198, ⟨10.1109/NANOARCH.2015.7180611⟩
Communication dans un congrès cea-01839851 v1

Hot Carrier Stress modeling: From degradation kinetics to trap distribution evolution

G. Torrente , X. Federspiel , D. Rideau , F. Monsieur , C. Tavernier et al.
2015 IEEE International Integrated Reliability Workshop (IIRW), Oct 2015, South Lake Tahoe, United States. pp.134-137, ⟨10.1109/IIRW.2015.7437086⟩
Communication dans un congrès hal-02049860 v1

Low frequency noise statistical characterization of 14nm FDSOI technology node

E. Ioannidis , C. Theodorou , S. Haendler , M.-K. Joo , E. Josse et al.
2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Jan 2015, Bologna, Italy. pp.181-184, ⟨10.1109/ULIS.2015.7063803⟩
Communication dans un congrès hal-02002261 v1

Low-frequency noise in bare SOI wafers: Experiments and model

Luca Pirro , Irina Ionica , Sorin Cristoloveanu , Gérard Ghibaudo
2015 ESSDERC - 45th European Solid-State Device Research Conference, Sep 2015, Graz, Austria. pp.286-289, ⟨10.1109/ESSDERC.2015.7324770⟩
Communication dans un congrès hal-02004194 v1

3DVLSI with CoolCube process: An alternative path to scaling

P. Batude , C. Fenouillet-Beranger , L. Pasini , V. Lu , F. Deprat et al.
2015 IEEE Symposium on VLSI Technology, Jun 2015, Kyoto, Japan. pp.T48-T49, ⟨10.1109/VLSIT.2015.7223698⟩
Communication dans un congrès hal-02049760 v1

New compact model for performance and process variability assessment in 14nm FDSOI CMOS technology

Y. Denis , F. Monsieur , G. Ghibaudo , J. Mazurier , E. Josse et al.
2015 International Conference on Microelectronic Test Structures (ICMTS), Mar 2015, Tempe, United States. pp.59-64, ⟨10.1109/ICMTS.2015.7106109⟩
Communication dans un congrès hal-02049575 v1

Electrical Characterization of Advanced CMOS devices

Gérard Ghibaudo
4th International Conference on Modern Circuits and Systems Technologies (MOCAST), organized by the FP7 Marie Curie IAPP Project FTK, the Greek National projects NANOTRIM and NANOMOS and the Micro & Nano Scientific Society, May 2015, Thessaloniki, Greece
Communication dans un congrès hal-02051772 v1

CMOS roadmap analysis from the perspective of III-V technology using MASTAR

Gaspard Hiblot , Quentin Rafhay , Gabriel Mugny , Gérard Ghibaudo , Frédéric Boeuf
2015 Silicon Nanoelectronics Workshop (SNW), Jun 2015, Kyoto, Japan. pp.115-116
Communication dans un congrès hal-02049782 v1

Impact of the W scaling on bias temperature instability in nanowire transistors

A. Laurent , Xavier Garros , Sylvain Barraud , Gilles Reimbold , E. Vincent et al.
19th Conference on Insulating Films on semiconductors (INFOS), Jun 2015, Udine, Italy. pp.243-244
Communication dans un congrès hal-02051750 v1

Optimization of Trigate-On-Insulator MOSFET aspect ratio with MASTAR

Gaspard Hiblot , Quentin Rafhay , Loic Gaben , Gérard Ghibaudo , Frédéric Boeuf
2015 ESSDERC - 45th European Solid-State Device Research Conference, Sep 2015, Graz, Austria. pp.242-245, ⟨10.1109/ESSDERC.2015.7324759⟩
Communication dans un congrès hal-01959154 v1

Development of analytical compact drain current model for28 nm FDSOI MOSFETs

T.A. Karatsori , Andreas Tsormpatzoglou , Christoforos Theodorou , E.G. Ioannidis , Sebastien Haendler et al.
4th International Conference on Modern Circuits and Systems Technologies (MOCAST), organized by the FP7 Marie Curie IAPP Project FTK, the Greek National projects NANOTRIM and NANOMOS and the Micro & Nano Scientific Society, May 2015, Thessaloniki, Greece
Communication dans un congrès hal-02051762 v1

Impact of short-channel effects on velocity overshoot in MOSFET

Gaspard Hiblot , Quentin Rafhay , Frédéric Boeuf , Gérard Ghibaudo
2015 IEEE 13th International New Circuits and Systems Conference (NEWCAS), Jun 2015, Grenoble, France. pp.521-524, ⟨10.1109/NEWCAS.2015.7182061⟩
Communication dans un congrès hal-02049733 v1

Novel sheet resistance measurement on AlGaN/GaN HEMT wafer adapted from four-point probe technique

J. Lehmann , C. Leroux , G. Reimbold , M. Charles , A. Torres et al.
2015 International Conference on Microelectronic Test Structures (ICMTS), Mar 2015, Tempe, United States. pp.163-168, ⟨10.1109/ICMTS.2015.7106134⟩
Communication dans un congrès hal-02009889 v1

Analysis of the SET and RESET states drift of phase-change memories by low frequency noise measurements

S. Souiki-Figuigui , V. Sousa , G. Ghibaudo , G. Navarro , M. Coue et al.
2015 IEEE International Reliability Physics Symposium (IRPS), Apr 2015, Monterey, United States. pp.MY.1.1-MY.1.5, ⟨10.1109/IRPS.2015.7112807⟩
Communication dans un congrès hal-02049588 v1

The importance of the spacer region to explain short channels mobility collapse in 28nm Bulk and FDSOI technologies

F. Monsieur , Y. Denis , D. Rideau , V. Quenette , G. Gouget et al.
2014 ESSDERC - 44th European Solid-State Device Research Conference, Sep 2014, Venice, Italy. pp.254-257, ⟨10.1109/ESSDERC.2014.6948808⟩
Communication dans un congrès hal-02049192 v1

UTBB FD-SOI front- and back-gate coupling aware random telegraph signal impact analysis on a 6T SRAM

K.C Akyel , L. Ciampolini , O. Thomas , D. Turgis , G. Ghibaudo
2014 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2014, Millbrae, United States. pp.7a.3, ⟨10.1109/S3S.2014.7028222⟩
Communication dans un congrès hal-02049387 v1

Resistive switching of HfO2-based metal-insulator-metal devices

Marie Minvielle , Romain Bachelet , Guillaume Saint-Girons , G. Ghibaudo , F. Alibart et al.
Colloque de Recherche Inter Écoles Centrales (CRIEC 2014), Jun 2014, Ecully, France
Communication dans un congrès hal-01489831 v1

Statistical analysis of dynamic variability in 28nm FD-SOI MOSFETs

E. Ioannidis , S. Haendler , C. Theodorou , N. Planes , C. Dimitriadis et al.
2014 ESSDERC - 44th European Solid-State Device Research Conference, Sep 2014, Venice, Italy. pp.214-217, ⟨10.1109/ESSDERC.2014.6948798⟩
Communication dans un congrès hal-02001909 v1

A new approach for modeling drain current process variability applied to FDSOI technology

Y. Denis , F. Monsieur , D. Petit , C. Tavernier , H. Jaouen et al.
2014 15th International Conference on Ultimate Integration on Silicon (ULIS), Apr 2014, Stockholm, Sweden. pp.93-96, ⟨10.1109/ULIS.2014.6813924⟩
Communication dans un congrès hal-02048983 v1

A new gate pattern measurement for evaluating the BTI degradation in circuit conditions

A. Subirats , X. Garros , J. Cluzel , J. El Husseini , F. Cacho et al.
2014 IEEE International Reliability Physics Symposium (IRPS), Jun 2014, Waikoloa, United States. pp.5D.1.1-5D.1.5, ⟨10.1109/IRPS.2014.6860670⟩
Communication dans un congrès hal-02049034 v1

Low-temperature characterization of Hall and effective mobility in junctionless transistors

Min-Kyu Joo , Mireille Mouis , Benjamin Piot , Sylvain Barraud , Minju Shin et al.
2014 11th International Workshop on Low Temperature Electronics (WOLTE), Jul 2014, Grenoble, France. pp.85-88, ⟨10.1109/WOLTE.2014.6881032⟩
Communication dans un congrès hal-02016510 v1

Variability-tolerant Convolutional Neural Network for Pattern Recognition applications based on OxRAM synapses

D. Garbin , O. Bichler , E. Vianello , Q. Rafhay , C. Gamrat et al.
2014 IEEE International Electron Devices Meeting, Dec 2014, San Francisco, United States. pp.28.4.1-28.4.4, ⟨10.1109/IEDM.2014.7047126⟩
Communication dans un congrès cea-01839848 v1

Horizontal Integration and Electrical Characterisation of Si/SiGe Nanowire Tunnel FETs

Virginie Brouzet , Bassem Salem , Priyanka Periwal , Guillaume Rosaz , Thierry Baron et al.
2014 E-MRS Spring Meeting: Symposium X: Materials Research for Group IV semiconductors: Growth, Characterization & Techno, Developments, G. Kissinger, S. Pizzini, H. Yamada-Kaneta, C. Clayes, D. Yang and G. Wilson, May 2014, Lille, France
Communication dans un congrès cea-02067074 v1
Image document

Effective field and universal mobility in high-k metal gate UTBB-FDSOI devices

Olivier Nier , Denis Rideau , Antoine Cros , Frédéric Monsieur , Gérard Ghibaudo et al.
27th International Conference on Microelectronic Test Structures (ICMTS), Mar 2014, Udine, Italy. pp.8 - 13, ⟨10.1109/ICMTS.2014.6841460⟩
Communication dans un congrès hal-01102474 v1

A review of the pseudo-MOSFET and recent developments

Sorin Cristoloveanu, , Irina Ionica , Amer Diab , Luca Pirro , F.Y. Liu et al.
18th Int. Workshop on Dielectrics in Microelectronics (WODIM 2014), Jun 2014, Kinsale, Ireland
Communication dans un congrès hal-02009825 v1

Impact of quantum modulation of the inversion charge in the MOSFET subthreshold regime

Gaspard Hiblot , Quentin Rafhay , Frédéric Boeuf , Gérard Ghibaudo
2014 ESSDERC - 44th European Solid-State Device Research Conference, Sep 2014, Venice, Italy. pp.286-289, ⟨10.1109/ESSDERC.2014.6948816⟩
Communication dans un congrès hal-01959276 v1

Impact of Random Telegraph Signals on 6T high-density SRAM in 28nm UTBB FD-SOI

Kaya Can Akyel , Lorenzo Ciampolini , Olivier Thomas , David Turgis , Gérard Ghibaudo
2014 ESSDERC - 44th European Solid-State Device Research Conference, Sep 2014, Venice, Italy. pp.94-97, ⟨10.1109/ESSDERC.2014.6948766⟩
Communication dans un congrès hal-02048975 v1

Split-CV for pseudo-MOSFET characterization: Experimental setups and associated parameter extraction methods

L. Pirro , I. Ionica , G. Ghibaudo , S. Cristoloveanu
2014 International Conference on Microelectronic Test Structures (ICMTS), Mar 2014, Udine, Italy. pp.14-19, ⟨10.1109/ICMTS.2014.6841461⟩
Communication dans un congrès hal-02003797 v1

Cascode configuration as a substitute to LDE MOSFET for improved electrical mismatch performance

Lama Rahhal , Guillaume Bertrand , Aurélie Bajolet , Julien Rosa , Gérard Ghibaudo
2014 International Conference on Microelectronic Test Structures (ICMTS), Mar 2014, Udine, Italy. pp.238-242, ⟨10.1109/ICMTS.2014.6841499⟩
Communication dans un congrès hal-02049001 v1

Experimental and theoretical understanding of Forming, SET and RESET operations in Conductive Bridge RAM (CBRAM) for memory stack optimization

J. Guy , G. Molas , P. Blaise , C. Carabasse , M. Bernard et al.
2014 IEEE International Electron Devices Meeting (IEDM), Dec 2014, San Francisco, United States. pp.6.5.1-6.5.4, ⟨10.1109/IEDM.2014.7046997⟩
Communication dans un congrès hal-02049407 v1

Frequency dependence of TDDB &amp; PBTI with OTF monitoring methodology in high-k/metal gate stacks

A. Bezza , M. Rafik , D. Roy , X. Federspiel , P. Mora et al.
2014 IEEE International Reliability Physics Symposium (IRPS), Jun 2014, Waikoloa, United States. pp.GD.6.1-GD.6.4, ⟨10.1109/IRPS.2014.6861149⟩
Communication dans un congrès hal-02049042 v1

Surface effects on split C-V measurements on SOI wafers

L. Pirro , Ionica I. , Gérard Ghibaudo , Sorin Cristoloveanu,
10th EUROSOI Workshop, Jan 2014, Tarragone, Spain
Communication dans un congrès hal-01182138 v1

nFET FDSOI activated by low temperature solid phase epitaxial regrowth: Optimization guidelines

L. Pasini , P. Batude , M. Cassé , L. Brunet , P. Rivallin et al.
2014 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2014, Millbrae, United States. pp.6a.3, ⟨10.1109/S3S.2014.7028214⟩
Communication dans un congrès hal-02049393 v1

Electrical transport in thin film transistors with In-Zn-O channels doped with post-transition metals

Mohammed Benwadih , Jan Chroboczek , Gérard Ghibaudo , Romain Coppard , Dominique Vuillaume
Journées Nationales du GdR OXYFUN " Oxydes fonctionnels : du matériau au dispositif ", Jun 2014, Autrans, France
Communication dans un congrès hal-01055034 v1

In depth characterization of hole transport in 14nm FD-SOI pMOS devices

M. Shin , Minghua Shi , M. Mouis , A. Cros , E. Josse et al.
2014 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2014, Millbrae, United States. pp.6a.4, ⟨10.1109/S3S.2014.7028215⟩
Communication dans un congrès hal-02016535 v1

In depth characterization of electron transport in 14nm FD-SOI nMOS devices

Minju Shin , Ming Shi , Mireille Mouis , Antoine Cros , Emmanuel Josse et al.
10th EUROSOI Workshop, Jan 2014, Tarragone, Spain
Communication dans un congrès hal-01182132 v1

Assessment of technological device parameters by low-frequency noise investigation in SOI omega-gate nanowire NMOS FETs

M. Koyama , M. Cassé , S. Barraud , G. Ghibaudo , H. Iwai et al.
2014 15th International Conference on Ultimate Integration on Silicon (ULIS), Apr 2014, Stockholm, Sweden. pp.57-60, ⟨10.1109/ULIS.2014.6813905⟩
Communication dans un congrès hal-02048986 v1

Chemically improved high performance solution processed indium gallium zinc oxide thin-film transistors

Mohammed Benwadih , Jan Chroboczek , Gérard Ghibaudo , Romain Coppard , Dominique Vuillaume
2014 E-MRS Spring Meeting Symposium I - Solution processing and properties of functional oxide thin films and nanostructures, J.E. ten Elshof, N. Mestres, A. Hardy, B. Malic, G.L.Brennecka, May 2014, Lille, France
Communication dans un congrès hal-00957798 v1

Influence of Technological and Geometrical Parameters on Low-Frequency Noise in SOI Omega-Gate Nanowire NMOSFETs

Koyama M. , Cassé M. , Coquand R. , Barraud S. , Gérard Ghibaudo et al.
2014 International Symposium on VLSI Technology, Systems and Apllications, Proceedings of Technical Program (2014 VLSI-TSA), Apr 2014, Taiwan, China. pp.54-55, ⟨10.1109/VLSI-TSA.2014.6839653⟩
Communication dans un congrès hal-01182167 v1

Fabrication and Electrical Characterization of tunnel FET Devices Based on Si/SiGe Heterojunction PIN nanowires

Virginie Brouzet , Bassem Salem , Priyanka Periwal , Thierry Baron , Franck Bassani et al.
2014 E-MRS Fall Meeting: Symposium B: Materials for Optics and Optoelectronics, G. Ben Assayag, M. Perego and P. Pellegrino, Sep 2014, Warsaw, Poland
Communication dans un congrès cea-02067075 v1

(Invited) In Depth Study of Ge Impact on Advanced SiGe PMOS Transistors

A. Soussou , M. Cassé , G. Reimbold , C. Leroux , F. Andrieu et al.
226th ECS and SMEQ Joint International Meeting: 12th Symposium on Semiconductors, Dielectrics and Metal for Nanoelectronics, S. Kar, M. Houssa, H. Jagannathan, K. Kita, D. Landheer, D. Misra and S. Van Elshocht, Oct 2014, Cacun, Mexico
Communication dans un congrès hal-02051731 v1

Investigation of HfO<inf>2</inf>/Ti based vertical RRAM - Performances and variability

G. Piccolboni , G. Molas , C. Carabasse , J. F Nodin , C. Pellissier et al.
2014 14th Non-Volatile Memory Technology Symposium (NVMTS), Oct 2014, Jeju Island, South Korea. pp.134-138, ⟨10.1109/NVMTS.2014.7060867⟩
Communication dans un congrès hal-02049437 v1

A mobility enhancement strategy for sub-14nm power-efficient FDSOI technologies

B. Desalvo , P. Morin , M. Pala , G. Ghibaudo , O. Rozeau et al.
2014 IEEE International Electron Devices Meeting (IEDM), Dec 2014, San Francisco, United States. pp.7.2.1-7.2.4, ⟨10.1109/IEDM.2014.7047002⟩
Communication dans un congrès hal-02049421 v1

Variability analysis &#x2014; Prediction method for nanoscale triple gate FinFETs

D. Tassis , I. Messaris , N. Fasarakis , S. Nikolaidis , G. Ghibaudo et al.
2014 IEEE 29th International Conference on Microelectronics (MIEL), May 2014, Belgrade, Serbia. pp.99-102, ⟨10.1109/MIEL.2014.6842095⟩
Communication dans un congrès hal-02049021 v1

Insights in accesses optimization for nFET low temperature Fully Depleted Silicon On Insulator devices

L. Pasini , B. Sklenard , P. Batude , M. Cassé , P. Rivallin et al.
2014 14th International Workshop on Junction Technology (IWJT), May 2014, Shanghai, China. pp.33-38
Communication dans un congrès hal-02049010 v1

Low temperature characterization of 14nm FDSOI CMOS devices

M. Shin , Minghua Shi , M. Mouis , A. Cros , E. Josse et al.
2014 11th International Workshop on Low Temperature Electronics (WOLTE), Jul 2014, Grenoble, France. pp.29-32, ⟨10.1109/WOLTE.2014.6881018⟩
Communication dans un congrès hal-02049067 v1

Low temperature characterization of mobility in advanced FD-SOI n-MOSFETs under interface coupling conditions

M. Shin , Minghua Shi , Mouis M. , A. Cros , Josse E. et al.
2014 15th International Conference on Ultimate Integration on Silicon (ULIS), Apr 2014, Stockholm, Sweden. pp.61-64, ⟨10.1109/ULIS.2014.6813906⟩
Communication dans un congrès hal-01182148 v1

Mismatch trends in 20nm gate-last bulk CMOS technology

Lama Rahhal , Aurélie Bajolet , Jean-Philippe Manceau , Julien Rosa , Stéphane Ricq et al.
2014 15th International Conference on Ultimate Integration on Silicon (ULIS), Apr 2014, Stockholm, Sweden. pp.133-136, ⟨10.1109/ULIS.2014.6813916⟩
Communication dans un congrès hal-02048981 v1

Transport and interface characterization in ultra-thin body MOS devices

Gérard Ghibaudo
INFOS 2013, Jun 2013, Cracow, Poland
Communication dans un congrès hal-01074466 v1

On the Optimization of Ebeam Lithography Using Hydrogen Silsesquioxane (HSQ) for Innovative Self-Aligned CMOS Process

R. Coquand , S. Monfray , J. Pradelles , L. Martin , M.-P. Samson et al.
223rd ECS Meeting, May 2013, Toronto, Canada
Communication dans un congrès hal-01020074 v1

Strain transfer structure as a mobility booster for fully-depleted SOI MOSFETs at the 10nm node

Sylvain Morvan , Andrieu F. , Barbe J.-C. , Gérard Ghibaudo
14th Int. Conference on Ultimate Integration on Silicon, Mar 2013, Warwick, United Kingdom. ⟨10.1109/ULIS.2013.6523490⟩
Communication dans un congrès hal-01181854 v1

Effective mobility in extra-thin film and ultra-thin BOX SOI wafers.

A. Diab , C. Fernández , L. Pirro , N. Rodriguez , I. Ionica et al.
EuroSOI 2013, Jan 2013, Paris, France. pp.2.4
Communication dans un congrès hal-01068430 v1

Low-Frequency noise behavior of n-channel UTBB FD-SOI MOSFETs

C. G. Theodorou , F. Andrieu , T. Poiroux , O. Faynot , G. Ghibaudo et al.
ICNF 2013 (Int. Conf. on Noise and Fluctuations, Montpellier, France (June 2013), Jun 2013, Montpellier, France. pp.1-4, ⟨10.1109/ICNF.2013.6578986⟩
Communication dans un congrès hal-01025683 v1

Parameters extraction in SiGe/Si pMOSFETs using split CV technique

A. Soussou , Leroux C. , Rideau D. , Toffoli A. , Romano G. et al.
2013 14th International Conference on Ultimate Integration on Silicon (ULIS), Mar 2013, Warwick, United Kingdom. ⟨10.1109/ULIS.2013.6523486⟩
Communication dans un congrès hal-01181784 v1

Modeling of the impact of source/drain regions on short channel effects in MOSFETs

Dutta T. , Quentin Rafhay , Pananakakis G. , Gérard Ghibaudo
14th Int. Conference on Ultimate Integration on Silicon, Mar 2013, Warwick, United Kingdom. ⟨10.1109/ULIS.2013.6523493⟩
Communication dans un congrès hal-01181252 v1

High Field Transport Characterization in Nano MOSFETs using 10GHz capacitance measurements

C. Diouf , A. Cros , D. Gloria , J. Rosa , G. Ghibaudo
IEDM 2013, Dec 2013, Washington, United States. pp.192-195, ⟨10.1109/IEDM.2013.6724583⟩
Communication dans un congrès hal-01074181 v1

Simulation methodology for 2D random network of CNTs field-effect transistors

Joo Min-Kyu , Mouis M. , Kim Gyu-Tae , Kim Un Jeong , Gérard Ghibaudo
14th Int. Conference on Ultimate Integration on Silicon, Mar 2013, Warwick, United Kingdom. pp.197-200,, ⟨10.1109/ULIS.2013.6523518⟩
Communication dans un congrès hal-01181852 v1

Sheet resistance measurement on AlGaN/GaN wafers and dispersion study

J. Lehmann , Cédric Leroux , M. Charles , A. Torres , E. Morvan et al.
INFOS 2013, Jun 2013, Cracow, Poland. pp.P.14
Communication dans un congrès hal-01074271 v1

Evolution of low frequency noise and noise variability through CMOS bulk technology nodes

E.G. Ioannidis , S. Haendler , J. Rosa , J.-P. Manceau , C.A. Dimitriadis et al.
ICNF 2013 (Int. Conf. on Noise and Fluctuations), Jun 2013, Montpellier, France. pp.1-4, ⟨10.1109/ICNF.2013.6578985⟩
Communication dans un congrès hal-01024616 v1

Impact of dynamic variability on SRAM functionality and performance in nanoscaled CMOS technologies.

A. Subirats , X. Garros , J. Mazurier , J. El Husseini , O. Rozeau et al.
IRPS 2013, Apr 2013, Monterey, CA, United States. pp.389-393, ⟨10.1109/IRPS.2013.6532008⟩
Communication dans un congrès hal-01074529 v1

Comparative simulation of TriGate and FinFET on SOI: Evaluating a multiple Threshold voltage strategy on triple gate devices

Gérard Ghibaudo
2013 IEEE SOI-3D-Subthreshold Microelectronics Technology unified conference, Oct 2013, Monterey (CA), United States. ⟨10.1109/S3S.2013.6716523⟩
Communication dans un congrès hal-01181250 v1

Impact of back biasing on the effective mobility in UTBB FDSOI CMOS technology

I. Ben-Akkez , C. Fenouillet-Beranger , A. Cros , F. Balestra , G. Ghibaudo
2013 International Semiconductor Conference Dresden-Grenoble: Technology, Design, Packaging, Simulation and Test International Conference and table Top Exhibition (ISCDG 2013), Sep 2013, Dresden, Germany. ⟨10.1109/ISCDG.2013.6656324⟩
Communication dans un congrès hal-01078796 v1

Electrical simulation and characterization of random networks of conducting 1D structures

Min-Kyu Joo , M. Mouis , G.-T. Kim , U. J. Kim , G. Ghibaudo
first meeting on Transparent Conducting Materials, Nov 2013, grenoble, France
Communication dans un congrès hal-01060935 v1

New insight on the frequency dependence of TDDB in high-k/metal gate stacks

Anas Bezza , Mohammad Rafik , Daniel Roy , X. Federspiel , Pascal Mora et al.
IRW 2013, Oct 2013, South Lake Tahoe, CA, United States. ⟨10.1109/IIRW.2013.6804142⟩
Communication dans un congrès hal-01078341 v1

Scaling of Ω-gate SOI nanowire N- and P-FET down to 10nm gate length: Size- and orientation-dependent strain effects

S. Barraud , R. Coquand , V. Maffini-Alvaro , M.-P. Samson , J.-M. Hartmann et al.
2013 Symposium on VLSI Technology: Digest of Technical Papers, Jun 2013, Kyoto, Japan. pp.T230-231
Communication dans un congrès hal-01182112 v1

New methodology for drain current local variability characterization using Y function method

L. Rahhal , A. Bajolet , C. Diouf , A. Cros , J. Rosa et al.
IEEE ICMTS 2013, Mar 2013, Osaka, Japan. pp.99-103, ⟨10.1109/ICMTS.2013.6528153⟩
Communication dans un congrès hal-01024437 v1

Gate-Last Integration on planar FDSOI for low-VTp and low-EOT MOSFETs

S. Morvan , F. Andrieu , Cédric Leroux , X. Garros , M. Cassé et al.
INFOS 2013, Jun 2013, Cracow, Poland. pp.6.3
Communication dans un congrès hal-01074289 v1

Innovative through-Si 3D lithography for ultimate self-aligned planar Double-Gate and Gate-All-Around nanowire transistors

Coquand R. , Monfray S. , Barraud S. , M. P. Samson , Arvet C. et al.
2013 Symposium on VLSI Technology: Digest of Technical Papers, Jun 2013, Kyoto, Japan. pp.T226-T227
Communication dans un congrès hal-01182106 v1

Horizontal Integration and electrical characterisation of Silicon Nanowire Tunnel FETs

V. Brouzet , B. Salem , P. Periwal , T. Baron , F. Bassani et al.
ICONN 2013, 2013, Annecy, France
Communication dans un congrès hal-00955750 v1

Understanding Ge impact on VT and VFB in Si1-xGex/Si pMOSFETs

A. Soussou , Cédric Leroux , D. Rideau , A. Toffoli , G. Romano et al.
INFOS 2013, Jun 2013, Cracow, Poland. pp.15.4
Communication dans un congrès hal-01074279 v1

Influence of Device Scaling on Low-Frequency Noise in SOI Tri-Gate N- and P-Type Si Nanowire MOSFETs

M. Koyama , M. Cassé , R. Coquand , S. Barraud , G. Ghibaudo et al.
43rd ESSDERC, Sep 2013, Bucarest, Romania. pp.303-307, ⟨10.1109/ESSDERC.2013.6818878⟩
Communication dans un congrès hal-01022530 v1

Electrical characterization of ultra-thin silicon-on-insulator substrates : static and split C–V measurements in the Pseudo–MOSFET configuration

Piro L. , Diab A. , Ionica I. , Gérard Ghibaudo , Cristoloveanu S.
4th Int. Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Technology (ULSIC ), Jul 2013, Villard de Lans, France. pp.203-208
Communication dans un congrès hal-01182173 v1

Strain-enhanced performance of Si-Nanowire FETs

S. Barraud , R. Coquand , M. Koyama , G. Ghibaudo , G. Reimbold
223rd ECS Meeting, May 2013, Toronto, Canada
Communication dans un congrès hal-01020599 v1

Study of Low-Frequency Noise in SOI Tri-gate Si Nanowire MOSFETs

M. Koyama , M. Cassé , R. Coquand , S. Barraud , G. Ghibaudo et al.
ICNF 2013 (Int. Conf. on Noise and Fluctuations), Jun 2013, Montpellier, France. pp.1-4, ⟨10.1109/ICNF.2013.6578950⟩
Communication dans un congrès hal-01024536 v1

Origins of the short channel effects increase in III-V nMOSFET technologies

T. Dutta , Quentin Rafhay , R. Clerc , J. Lacord , S. Monfray et al.
2012 13th International Conference on Ultimate Integration on Silicon (ULIS), Mar 2012, Grenoble, France
Communication dans un congrès hal-01959380 v1
Image document

Physical Understanding of Program Injection and Consumption in Ultra-Scaled SiN Split-Gate Memories

L. Masoero , V. Della Marca , G. Molas , M. Gély , O. Cueto et al.
2012 4th IEEE International Memory Workshop (IMW), May 2012, Milan, France. ⟨10.1109/IMW.2012.6213686⟩
Communication dans un congrès hal-01760589 v1

Impact of front-back gate coupling on low frequency noise in 28 nm FDSOI MOSFETs

Christoforos Theodorou , Eleftherios Ioannidis , Sebastien Haendler , Nicolas Planes , Franck Arnaud et al.
ESSDERC 2012 - 42nd European Solid State Device Research Conference, Sep 2012, Bordeaux, France. pp.334-337, ⟨10.1109/ESSDERC.2012.6343401⟩
Communication dans un congrès hal-02001870 v1

Front-back gate coupling effect on 1/f noise in ultra-thin Si film FDSOI MOSFETs

C. Theodorou , E. Ioannidis , S. Haendler , N. Planes , F. Arnaud et al.
2012 International Semiconductor Conference Dresden-Grenoble (ISCDG) - formerly known as the Semiconductor Conference Dresden (SCD), Sep 2012, Grenoble, France. pp.223-226, ⟨10.1109/ISCDG.2012.6360011⟩
Communication dans un congrès hal-02001882 v1

New parameter extraction method based on split C-V for FDSOI MOSFETs

I. Ben Akkez , A. Cros , C. Fenouillet-Beranger , F. Boeuf , Quentin Rafhay et al.
2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC), Sep 2012, Bordeaux, France. ⟨10.1109/ESSDERC.2012.6343372⟩
Communication dans un congrès hal-01959345 v1
Image document

Scalability of split-gate charge trap memories down to 20nm for low-power embedded memories

L. Masoero , G. Molas , F. Brun , M. Gély , P. Colonna et al.
2011 IEEE International Electron Devices Meeting (IEDM), Dec 2011, Washington, United States. ⟨10.1109/IEDM.2011.6131522⟩
Communication dans un congrès hal-01760601 v1

Contact Resistance in Top Gate / Bottom Contact OTFTs.

S. Altazin , R. Clerc , R. Gwoziecki , D. Boudinet , G. Ghibaudo et al.
Int. Conference on Organics Electronics, 2010, Paris, France
Communication dans un congrès hal-00604542 v1

Impact of hot carrier stress on small signal MOSFET RF parameters

L. Negre , Daniel Roy , S. Boret , P. Scheer , N. Kauffmann et al.
IEEE Integrated Reliability Workshop IRW 2010, 2010, Lake Tahoe, United States
Communication dans un congrès hal-00604565 v1

Mobility characterization in advanced FD-SOI CMOS devices

G. Ghibaudo
1st Ukrainian-French Symposium 'Semiconductor-On-Insulator Materials, Devices and Circuits: Physics, Technology and Diagnostics, 2010, Kiev, Ukraine
Communication dans un congrès hal-00604919 v1

Comparison of Radio Frequency Physical Vapor Deposition target material used for LaOx cap layer deposition in 32nm

S. Baudot , P. Caubet , M. Grégoire , R. A. Bianchi , R. Pantel et al.
Int. Conf. materials for advanced metallization, MAM 2010, 2010, Malines, Belgium
Communication dans un congrès hal-00604574 v1

Experimental Analysis of Surface Roughness Scattering in FinFET

J. W. Lee , D. Jang , M. Mouis , G. T. Kim , T. Chiarella et al.
40th European Solid-State Device Research Conference,, Sep 2010, Sevilla, Spain. pp.305-308
Communication dans un congrès hal-00604290 v1

Electrical characterisation of SOI nanodevices

G. Ghibaudo
EUROSOI Conference,, 2010, Grenoble, France
Communication dans un congrès hal-00604524 v1

MOS Transistor Matching at Low Temperature for Analog Circuit Design

P. Martin , A.S. Royet , G. Ghibaudo
9th Int. Workshop on Low Temperature Electronics, WOLTE 9, Jun 2010, Guaruja, Brazil
Communication dans un congrès hal-00604738 v1

Investigation of the role of H-related defects in Al2O3 blocking layer on charge-trap memory retention by atomistic simulations and device physical modelling

G. Molas , L. Masoero , P. Blaise , A. Padovani , J. P. Colonna et al.
IEEE IEDM 2010,, 2010, San Francisco, CA, Spain
Communication dans un congrès hal-00604550 v1

Static and low frequency noise characterization of P-type polymer and N-type small molecule OFETs

Y. Xu , G. Ghibaudo , F. Balestra , J. Chroboczek , R. Gwoziecki et al.
International Conference on Organic Electronics,, Jun 2010, Paris, France
Communication dans un congrès hal-00604546 v1

Layered HfSiON-based tunnel stacks for voltage reduction and improved reliability in TANOS memories

G. Molas , Marc Bocquet , J. Colonna , V. Vidal , R. Kies et al.
Proceedings of 2010 International Symposium on VLSI Technology, System and Application, Apr 2010, Hsin Chu, France. ⟨10.1109/VTSA.2010.5488949⟩
Communication dans un congrès hal-01745640 v1

Parameter Extraction of Nano-Scale MOSFETs Using Modified Y Function Method

N. Subramanian , G. Ghibaudo , M. Mouis
40th European Solid-State Device Research Conference,, Sep 2010, Sevilla, Spain. pp.309-312
Communication dans un congrès hal-00604302 v1

In-depth analysis of 3D Silicon nanowire SONOS memory characteristics by TCAD simulations

Emmanuel Nowak , A. Hubert , L. Perniola , T. Ernst , G. Ghibaudo et al.
2nd International Memory Workshop, 2010, South Korea
Communication dans un congrès hal-00604552 v1

Ultra-Thin (4nm) Gate-All-Around CMOS devices with High-k/Metal for Low Power Multimedia Applications

J.-L. Huguenin , S. Monfray , G. Bidal , S. Denorme , P. Perreau et al.
SSDM 2010, 2010, tokyo, Japan
Communication dans un congrès hal-00604648 v1

Low temperature characterization of different deep submicron SOI and FinFET devices

J. Jomaah , K. Bennamane , F. Balestra , G. Ghibaudo
9th Int. Workshop on Low Temperature Electronics, WOLTE 9, Jun 2010, Guaruja, Brazil
Communication dans un congrès hal-00604735 v1

Characterization and modelling of device variability in advanced CMOS technologies

G. Ghibaudo , C. Mezzomo , A. Bajolet , A. Cathignol , R. Difrenza
Int. workshop on Simulation and Characterization of Statistical CMOS Variability and Reliability, 2010, Bologna, Italy
Communication dans un congrès hal-00604921 v1

Localized SOI Logic and Bulk I/O devices co-integration for Low Power System-on-Chip Technology.

J.-L. Huguenin , S. Monfray , S. Denorme , G. Bidal , P. Perreau et al.
International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), 2010, Taiwan
Communication dans un congrès hal-00604654 v1

Hybrid Localized SOI/Bulk technology for Low Power System-on-Chip.

J.-L. Huguenin , S. Monfray , G. Bidal , S. Denorme , P. Perreau et al.
IEEE VLSI symposium 2010, 2010, Hawai, United States
Communication dans un congrès hal-00604653 v1

Unified Soft Breakdown MOSFETs Compact Model: From Experiments to Circuit Simulation

L. Gerrer , M. Rafik , G. Ribes , G. Ghibaudo
21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, ESREF 2010,, 2010, Monte CassinO, Italy
Communication dans un congrès hal-00604282 v1

Several Issues for Analog Design with a 0.18 µm CMOS Technology at Low Temperature

P. Martin , A.S. Royet , M. Cavelier , R. Fascio , G. Ghibaudo
9th Int. Workshop on Low Temperature Electronics, WOLTE 9, Jun 2010, Guaruja, Brazil
Communication dans un congrès hal-00604739 v1

Novel characterization of fully-depleted GeOI pMOSFET by magnetoresistance.

W. van den Daele , C. Le Royer , E. Augendre , G. Ghibaudo , S. Cristoloveanu
2010 IEEE International SOI Conference, Oct 2010, San Diego, California, United States
Communication dans un congrès hal-00604645 v1

Improved extraction of effective electric field and hole mobility in Ge and GeOI MOSFETs.

W. van den Daele , C. Le Royer , J. Mitard , G. Ghibaudo , S. Cristoloveanu
6th EUROSOI Workshop, Jan 2010, Grenoble, France
Communication dans un congrès hal-00604533 v1

From DC to RF MOSFET reliability (45mn).

L. Negre , Daniel Roy , S. Boret , P. Scheer , G. Ghibaudo
13th European Microwave Week, 2010, Paris, France
Communication dans un congrès hal-00604281 v1

Drain Current Variability in 45nm Heavily Pocket-implanted Bulk MOSFET: Characterization and Modeling

C. M. Mezzomo , A. Bajolet , A. Cathignol , G. Ghibaudo
40th European Solid-State Device Research Conference,, Sep 2010, Sevilla, Spain
Communication dans un congrès hal-00604288 v1

Electrical Characterization of Si nanowires

G. Ghibaudo
Int. Workshop on silicon nanowires (NANOSIL), 2010, Louvain, Belgium
Communication dans un congrès hal-00604917 v1

Dark Space, Quantum Capacitance and Inversion Capacitance in Si, Ge, GaAs and In0.53Ga0.47As nMOS Capacitors

Q. Rafhay , R. Clerc , J. Coignus , G. Pananakakis , G. Ghibaudo
Int. Conference on Ultimate Integration of Silicon, Mar 2010, Glasgow, UK, United Kingdom
Communication dans un congrès hal-00604652 v1

Quantization Effects in Silicided and Metal Gate MOSFETs. ULIS

N. Rodriguez , F. Gámiz , R. Clerc , C. Sampedro , A. Godoy et al.
Int. Conference on Ultimate Integration of Silicon, Aachen, Mar 2009, Germany. pp.103-106
Communication dans un congrès hal-00604243 v1

Vertical Transport in Spin Coated Ultra Thin Polycrystalline Pentacene Organic Stacks

S. Altazin , R. Clerc , R. Gwoziecki , D. Boudinet , J. M. Verilhac et al.
International Electron Device Meeting, Dec 2009, Balitimore, United States
Communication dans un congrès hal-00603814 v1

Intrinsic Cut Off Frequency of Si and GaAs Based Resonant Tunneling Diodes

E. Buccafurri , R. Clerc , F. Calmon , M. Pala , A. Poncet et al.
Int. Conference on Ultimate Integration of Silicon, Aachen, Mar 2009, Germany. pp.91-94
Communication dans un congrès hal-00604239 v1

Charge Localization During Program and Retention in NROM-like Nonvolatile Memory Devices.

Emmanuel Nowak , E. Vianello , L. Perniola , Marc Bocquet , G. Molas et al.
International Conference on Solid State Devices and Materials (SSDM), 2009, Sendai, Japan
Communication dans un congrès hal-00604215 v1

A stacked SONOS technology, up to 4 levels and 6nm crystalline nanowires, with gate-all-around or independent gates (Φ-Flash), suitable for full 3D integration.

A. Hubert , Emmanuel Nowak , K. Tachi , V. Maffini-Alvaro , C. Vizioz et al.
IEEE International Electron Devices Meeting, Baltimore,, Dec 2009, United States
Communication dans un congrès hal-00603802 v1

Analytical modeling of accumulation-mode suspended gate MOSFET and process challenges for very low operating power devices.

M. Collonge , M. Vinet , M. Ribeiro , J.-M. Pedini , B. Previtali et al.
Conference proceedings to be published, IEEE, 2009, Apr 2009, Hsinchu, Taiwan
Communication dans un congrès hal-00604262 v1

Study of Organic Material FETs by Combined Static and Low Frequency Noise Measurements

Y. Xu , T. Minari , K. Tsukagoshi , K. Bock , M. Fadallah et al.
AIP Conference Proceedings, 2009, Pisa, Italy. pp.163-166
Communication dans un congrès hal-00603795 v1

Drift-diffusion and Ballistic Mobility Characterization in Nano CMOS Devices

G. Ghibaudo , M. Mouis , L. Pham-Nguyen , K. Bennamane , I. Pappas et al.
GDR Nanoélectronique, Atelier, De la réalité et de l'intérêt du transport balistique dans les composants nanoélectroniques, May 2009, Orsay, France
Communication dans un congrès hal-00604959 v1

Oxide Soft BreakDown : From Device Modeling to Small Circuit Simulation

L. Gerrer , G. Ghibaudo , G. Ribes
39th European Solid-State Circuit Research Conference, Sep 2009, Athènes, Greece
Communication dans un congrès hal-00603730 v1

Performance Boosters for Advanced SOI CMOS.

L. Pham Nguyen , C. Fenouillet-Beranger , Pl Perreau , S. Denorme , G. Ghibaudo
Advanced Workshop on 'Frontiers in Electronics' (WOFE 09),, 2009, Rincon, Puerto Rico
Communication dans un congrès hal-00604264 v1

1/f Noise Modeling at Low Temperature with the EKV3 Compact Model.

P. Martin , G. Ghibaudo
NSTI Nanotech 2009, Workshop on Compact Modeling (WCM 2009), May 2009, Houston, United States. pp.636-638
Communication dans un congrès hal-00604193 v1
Image document

A New Technique to Extract the Gate Bias Dependent S/D Series Resistance of Sub-100nm MOSFETs

Dominique Fleury , Antoine Cros , Grégory Bidal , Hugues Brut , Emmanuel Josse et al.
International Symposium on VLSI Technology, Systems and Applications, Apr 2009, Hsinchu, Taiwan. pp.109 - 110, ⟨10.1109/VTSA.2009.5159314⟩
Communication dans un congrès hal-00465769 v1

Mismatch Measure Improvement Using Kelvin Test Structures in Transistor Pair Configuration in Sub-Hundred Nanometer MOSFET Technology

C. M. Mezzomo , M. Marin , C. Leyris , G. Ghibaudo
IEEE International Conference on Microelectronic Test Structures, Apr 2009, Oxnard, United States. pp.62-67
Communication dans un congrès hal-00603793 v1

Electrical noise in semiconductor devices - Case of CMOS technologies.

G. Ghibaudo
Global e-workshop on semiconductor technology, 2009, North Korea
Communication dans un congrès hal-00604750 v1

Guidelines for MOSFET Device Optimization accounting for L-dependent Mobility Degradation.

G. Bidal , D. Fleury , G. Ghibaudo , F. Boeuf , T. Skotnicki
Conference workbook., 2009, kyoto, Japan
Communication dans un congrès hal-00604208 v1

Etat de l'art de la compréhension du transport quasi ballistique dans les composants MOS avancés

R. Clerc , Q. Rafhay , G. Ghibaudo
GDR Nanoélectronique, Atelier, De la réalité et de l'intérêt du transport balistique dans les composants nanoélectroniques, May 2009, Orsay, France
Communication dans un congrès hal-00604961 v1

Impact of Ohmic Contacts on Space Charge Limited Currents in Au / Pentacene / Au Structures

S. Altazin , R. Clerc , R. Gwoziecki , G. Ghibaudo , G. Pananakakis et al.
International Conference on Organic Electronics 2009, Jun 2009, Liverpool, United Kingdom
Communication dans un congrès hal-00603796 v1

From Atomistic to Device Level Investigation of Hybrid Redox Molecular/Silicon Field-Effect Memory Devices IMW

J. Buckley , T. Pro , R. Barattin , A. Calborean , K. Huang et al.
to be published (IEEE Conference Proceedings, 2009), May 2009, Monterey, CA, United States
Communication dans un congrès hal-00603820 v1

Tuning the dipole at the High-k/SiO2 interface in advanced metal gate stacks

M. Charbonnier , Cédric Leroux , V. Cosnier , P. Besson , F. Martin et al.
International Conference on Insulating Films on Semiconductors (INFOS), Jul 2009, Cambridge, United Kingdom
Communication dans un congrès hal-00603834 v1

Electrical Transport characterization of nano CMOS devices with ultra-thin silicon film.

G. Ghibaudo , M. Mouis , L. Pham-Nguyen , K. Bennamane , I. Pappas et al.
to be published, IEEE Conference Proceedings (2009), 2009, kyoto, Japan
Communication dans un congrès hal-00603879 v1

New Experimental Insight into Ballisticity of Transport in Strained Bulk MOSFETs

D. Fleury , G. Bidal , A. Cros , F. Boeuf , T. Skotnicki et al.
IEEE Symposium on VLSI Technology (VLSI Symposium),, Jun 2009, kyoto, Japan
Communication dans un congrès hal-00604249 v1
Image document

Etude expérimentale de la balisticité du transport dans les transistors nMOS contraints sur silicium massif

Dominique Fleury , Grégory Bidal , Antoine Cros , Frédéric Boeuf , Thomas Skotnicki et al.
Journées Nationales du GdR Nanoélectronique, May 2009, Orsay, France. pp.18-19
Communication dans un congrès hal-00465797 v1
Image document

Guidelines for MOSFET Device Optimization accounting for L-dependent Mobility Degradation

Grégory Bidal , Dominique Fleury , Gérard Ghibaudo , Frédéric Boeuf , Thomas Skotnicki
Silicon Nanoelectronics Workshop (SNW), Jun 2009, Kyoto, Japan. pp.25-26
Communication dans un congrès hal-00465794 v2

Pockets engineering impact on mismatch performance on 45nm MOSFET technologies

C. M. Mezzomo , C. Leyris , E. Josse , G. Ghibaudo
Int. Conference on Ultimate Integration of Silicon, Mar 2009, Aachen, Germany. pp.15-18
Communication dans un congrès hal-00604235 v1

Strain sensitivity of gate leakage in biaxially strained FD-SOI nMOSFETs: a benefit for the performance trade-off and a novel way to extract the strain-induced band offset

F. Rochette , X. Garros , G. Reimbold , F. Andrieu , M. Cassé et al.
International Conference on Insulating Films on Semiconductors (INFOS), Jul 2009, Cambridge, United Kingdom
Communication dans un congrès hal-00603824 v1

Challenges and Prospects of RF Oscillators Using Silicon Resonant Tunneling Diodes

E. Buccafurri , A. Medjahdi , F. Calmon , R. Clerc , M. Pala et al.
European Solid-State Device Research Conference, Sep 2009, Athènes, Greece. pp.237-241
Communication dans un congrès hal-00603719 v1

Relationship between mobility and high-k interface properties in advanced Si and SiGe nanowires

K. Tachi , M. Casse , D. Jang , C. Dupré , A. Hubert et al.
IEEE International Electron Devices Meeting, Dec 2009, Balitimore, United States
Communication dans un congrès hal-00603809 v1

Experimental Investigation of Transport Mechanisms through HfO2 Gate Stacks in nMOS Transistors

J. Coignus , Cédric Leroux , R. Clerc , G. Ghibaudo , G. Reimbold et al.
European Solid-State Device Research Conference,, Sep 2009, Athènes, Greece. pp.169-173
Communication dans un congrès hal-00603729 v1

Impact of Coulomb Scattering on the Characteristics of Nanoscale Devices

F. Boeuf , G. Ghibaudo , T. Skotnicki
International Conference on Solid State Devices and Materials (SSDM, 2009, Sendai, Japan
Communication dans un congrès hal-00604219 v1

Mobility enhancement by CESL strain in SOI MOSFETs. Euro-SOI

L. Pham-Nguyen , C. Fenouillet-Beranger , G. Ghibaudo , S. Cristoloveanu
5th EUROSOI Workshop, Jan 2009, Göteborg, Sweden
Communication dans un congrès hal-00603735 v1

Low-Frequency Noise in a 0.18 µm Mixed-Mode CMOS Technology at Low Temperature

P. Martin , M. Cavelier , G. Ghibaudo
International Conference on Noise and Fluctuations (ICNF), 2009, Pisa, Italy
Communication dans un congrès hal-00603794 v1

Impact of Progressive Soft Oxide Breakdown on MOS Parameters: Experiment and Modelling.

L. Gerrer , G. Ribes , G. Ghibaudo , J. Jomaah
15th Workshop on Dielectrics in Microelectronics, Berlin, Germany, Jun 2008, Berlin, Germany
Communication dans un congrès hal-00392468 v1

Contributions and Limits of Charge Pumping Measurement for Addressing Trap Generation in High-K/SiO2 Dielectric Stacks.

M. Rafik , G. Ghibaudo
IEEE IRPS 2008, Phoenix, Arizona, USA, Apr 2008, Phoenix, United States
Communication dans un congrès hal-00392166 v1

Low-Temperature Electrical Characterization of eXtra-strained FD-SOI n-MOSFETs with TiN/HfO2 gate stack for the 32nm Technology Node.

S. Feruglio , F. Andrieu , O. Faynot , Patrick Garda , G. Ghibaudo
8th International Workshop on Low Temperature Electronics, WOLTE 8, Jena/Gabelbach, Germany, Jun 2008, Jena, Germany
Communication dans un congrès hal-00392485 v1

Nano Accumulation-Mode Suspended-Gate MOSFET: Impact of adhesion forces on electro-mechanical characteristics.

M. Collonge , M. Vinet , S. Deleonibus , G. Ghibaudo
IEEE ULIS conference, Udine, Italy, Mar 2008, Udine, Italy
Communication dans un congrès hal-00392458 v1

Impact of Oxide Progressive Soft Breakdown: Experiment and Modeling.

L. Gerrer , G. Ghibaudo , J. Jomaah , G. Ribes
Fringe workshop ESSDERC 08, Edinburgh, UK, Sep 2008, Edinburgh, Ireland
Communication dans un congrès hal-00392142 v1

Pushing Bulk Transistor with Conventional SiON Gate Oxide for Low Power Applications.

G. Bidal , F. Boeuf , F. Payet , S. Denorme , N. Loubet et al.
International Conference on Solid State Devices and Materials (SSDM 2008), Tokyo, Japon, Sep 2008, Tokyo, Japan
Communication dans un congrès hal-00392452 v1

15nm-diameter 3D Stacked Nanowires with optional Independent Gates operation (?FET)

C. Dupré , A. Hubert , S. Bécu , M. Jublot , V. Maffini-Alvaro et al.
IEEE International Electron Devices Meeting 2008, San Francisco, USA, Dec 2008, Grenoble, France
Communication dans un congrès hal-00392154 v1

NANOSIL Network of Excellence: Silicon-based nanostructures and nanodevices for long-term nanoelectronics applications

F. Balestra , E. Parker , D. Leadley , S. Mantl , Emmanuel Dubois et al.
European Materials Research Society (E-MRS 2008), Symposium, May 2008, Strasbourg, France
Communication dans un congrès hal-00391849 v1

Contact etch stop a-SixNy:H layer: a key factor for single polysilicon flash memory data retention.

G. Beylier , D. Benoit , P. Mora , S. Bruyère , G. Ghibaudo
15th Workshop on Dielectrics in Microelectronics, Berlin, Germany, Jun 2008, Berlin, Germany
Communication dans un congrès hal-00392476 v1

On the Influence of Molecular Linker on Charge Transfer Rate in Hybrid Molecular (Ferrocene)/Silicon Field Effect Memories.

J. Buckley , T. Pro , R. Barattin , A. Calborean , M. Gély et al.
23rd IEEE NVSMW / 3rd ICMTD '08, Club Méditerranée, Opio, FRANCE, May 2008, Opio, France
Communication dans un congrès hal-00392147 v1

Coupled Approach for Reliability Study of Fully Self Aligned SiGe:C 250GHz HBTs.

Mame Andallah Diop , N. Revil , M. Marin , F. Monsieur , T. Schwartzmann et al.
Integrated Reliability Workshop IRW, Lake Tahoe, USA, Nov 2008, USA, United States
Communication dans un congrès hal-00392171 v1

How to Monitor Metal-Insulator-Metal (MIM) Capacitors Dielectric Reliability.

V. Martinez , C. Besset , F. Monsieur , D. Ney , L. Montès et al.
26th International Conference on Microelectronics, MIEL, Nis, Serbia, May 2008, Nis, Serbia
Communication dans un congrès hal-00392492 v1

Analog-Digital Circuit Design at Low Temperature.

P. Martin , M. Cavelier , R. Fascio , G. Ghibaudo
8th International Workshop on Low Temperature Electronics, WOLTE 8, Jena/Gabelbach, Germany, Jun 2008, Jena, Germany
Communication dans un congrès hal-00392479 v1

Aspects of nanoelectronics in Minatec.

G. Ghibaudo
Invited paper, Workshop on advances in nanoelectronics, Kuwait City, Kuwait, Mar 2008, Kuwait, Kuwait
Communication dans un congrès hal-00392464 v1

Analytical Modeling of Tunneling Current through SiO2-HfO2 Stacks in MOS Structures

J. Coignus , R. Clerc , Cédric Leroux , G. Reimbold , G. Ghibaudo
15th Workshop on Dielectrics in Microelectronics, Jun 2008, Berlin, France
Communication dans un congrès hal-00391881 v1

Impact of Inside Spacer Process on Fully Self-Aligned 250 GHz SiGe:C HBTs Reliability Performances: a - Si vs. Nitride.

Mame Andallah Diop , N. Revil , M. Marin , F. Monsieur , P. Chevalier et al.
ESREF 2008, Maastricht, The Netherlands, Sep 2008, -, Netherlands
Communication dans un congrès hal-00392127 v1

New characterization methods for nanoMOSFETs.

G. Ghibaudo
MIGAS 2008, Autrans, Jun 2008, Autrans, France
Communication dans un congrès hal-00392178 v1

Low Frequency Noise Analysis in HfO2/SiO2 gate oxide Fully-Depelted SOI Transistors.

L. Zafari , J. Jomaah , G. Ghibaudo , O. Faynot
15th Workshop on Dielectrics in Microelectronics, Berlin, Germany, Jun 2008, Berlin, Germany
Communication dans un congrès hal-00392487 v1

Analysis of Electron Mobility in HfO2/TiN MOSFETs: The influence of HfO2 thickness, Temperature and oxide charge

M.A. Negara , K. Cherkaoui , C.D. Young , P. Majhi , W. Tsai et al.
39th IEEE Semiconductor Interface Specialists Conference, San Diego, Dec 2008, USA, France
Communication dans un congrès hal-00391866 v1

Performances Comparison of Si and GaAs Based Resonant Tunneling Diodes

E. Buccafurri , R. Clerc , F. Calmon , M. Pala , A. Poncet et al.
ISCS 2008, The International Symposium on Compound Semiconductors, Sep 2008, Grenoble, France
Communication dans un congrès hal-00391921 v1

On the Influence of Fin Corner Rounding in 3D Nanocrystal Flash Memories.

Emmanuel Nowak , L. Perniola , G. Ghibaudo , C. Jahan , P. Scheiblin et al.
23rd IEEE NVSMW / 3rd ICMTD '08, Club Méditerranée, Opio, FRANCE, May 2008, Opio, France
Communication dans un congrès hal-00392144 v1

Planar Bulk+ Technology using TiN/Hf-based gate stack for Low Power Applications.

G. Bidal , F. Boeuf , S. Denorme , N. Loubet , C. Laviron et al.
2008 Symposium on VLSI Technology, Hawai, USA, Jun 2008, Hawai, United States
Communication dans un congrès hal-00392459 v1

New Physical Model for ultra-scaled 3D Nitride-Trapping Non-Volatile Memories.

Emmanuel Nowak , Marc Bocquet , L. Perniola , G. Ghibaudo , G. Molas et al.
IEEE International Electron Devices Meeting 2008, San Francisco, USA, Dec 2008, San Francisco, United States
Communication dans un congrès hal-00392162 v1

Reliability of charge trapping memories with high-k control dielectrics

G. Molas , Marc Bocquet , H. Grampeix , J.P. Colonna , L. Masarotto et al.
5th International Symposium on Advanced Gate Stack Technology, Austin, Texas, Sep 2008, Austin, United States
Communication dans un congrès hal-00392559 v1

Experimental characterization of advanced nano-scale MOSFETs

G. Ghibaudo
Sinano School, Bertinoro, Italy,, Sep 2008, Bertinoro, Italy
Communication dans un congrès hal-00392189 v1

Study of Ferrocene/Silicon Hybrid Memories: Influence of the Chemical Linkers and Device Thermal Stability.

T. Pro , J. Buckley , R. Barattin , A. Calborean , M. Gély et al.
38th European Solid-State Device Research Conference (ESSDERC'08), Edinburgh, UK, Sep 2008, -, France
Communication dans un congrès hal-00392137 v1

A Mobility Extraction Method for 3D Multichannel Devices.

C. Dupré , T. Ernst , E. Bernard , B. Guillaumot , N. Vulliet et al.
38th European Solid-State Device Research Conference (ESSDERC'08),, Sep 2008, Grenoble, France
Communication dans un congrès hal-00391984 v1

Estimations of the Ion-Ioff Performances of Nano nMOSFETs with Alternative Channels Materials

Q. Rafhay , R. Clerc , G. Pananakakis , G. Ghibaudo
4th EUROSOI Workshop, Jan 2008, EUROSOI, France. pp.43-44
Communication dans un congrès hal-00391957 v1

SiO2 Interfacial Layer as The Origin of The Breakdown of High-k Dielectric Stacks.

M. Rafik , G. Ribes , G. Ghibaudo
15th Workshop on Dielectrics in Microelectronics, Berlin, Germany, Jun 2008, -, Germany
Communication dans un congrès hal-00392472 v1

Back-Scattering in Quasi Ballistic NanoMOSFETs: The role of Non Thermal Carrier Distributions

R. Clerc , P. Palestri , L. Selmi , G. Ghibaudo
IEEE ULIS conference, Mar 2008, Grenoble, France
Communication dans un congrès hal-00391933 v1

Direct comparison of Si/High-K and Si/SiO2 channels in advanced FD SOI MOSFETs.

L. Pham-Nguyen , C. Fenouillet-Beranger , A. Vandooren , A. Wild , G. Ghibaudo et al.
IEEE International SOI Conference, New Paltz, New York USA, Nov 2008, New York, United States
Communication dans un congrès hal-00392447 v1

Source-to-Drain vs. Band-to-Band Tunneling in Ultra-Scaled DG nMOSFETs with Alternative Channel Materials

Q. Rafhay , R. Clerc , G. Pananakakis , G. Ghibaudo
2008 International Conference on Solid State Devices and Materials, Sep 2008, -, France
Communication dans un congrès hal-00391924 v1

New Y-Function-Based Methodology for Accurate Extraction of Electrical Parameters on Nano-Scaled MOSFETs

D. Fleury , A. Cros , H. Brut , G. Ghibaudo
IEEE International Conference on Microelecronics Test Structure, ICMTS, Edinburgh, Scotland, 2008, Edinburgh, France
Communication dans un congrès hal-00392150 v1

NANOSIL Network of Excellence : silicon-based nanostructures and nanodevices for long-term nanoelectronics applications

F. Balestra , E. Parker , D. Leadley , S. Mantl , Emmanuel Dubois et al.
European Materials Research Society Spring Meeting, E-MRS Spring 2008, Symposium I : Front-end junction and contact formation in future Silicon/Germanium based devices, 2008, Strasbourg, France
Communication dans un congrès hal-00361546 v1

Impact of Silicon nitride CESL on NLDEMOS transistor reliability.

G. Beylier , S. Bruyère , D. Benoit , G. Ghibaudo
ESREF 2008, Maastricht, The Netherlands, Sep 2008, Maastricht, Netherlands
Communication dans un congrès hal-00392129 v1

On the Role of a HTO/Al2O3 Bi-Layer Blocking Oxide in Nitride-Trap Non-Volatile Memories

Marc Bocquet , G. Molas , L. Perniola , X. Garros , J. Buckley et al.
38th European Solid-State Device Research Conference (ESSDERC'08), Edinburgh, UK, Sep 2008, Edinburgh, France
Communication dans un congrès hal-00392558 v1

Impact of scaling on electrostatics of germanium-channel MOSFET-analytical study.

E. Batail , S. Monfray , A. Pouydebasque , G. Ghibaudo , T. Skotnicki
IEEE Silicon Nanoelectronics Workshop, Honolulu, USA, Jun 2008, Honolulu, United States
Communication dans un congrès hal-00392184 v1
Image document

Intrinsic fixed charge and trapping properties of HfAlO interpoly dielectric layers

Marc Bocquet , G. Molas , H. Grampeix , J. Buckley , F. Martin et al.
International Conference on Memory Technology and Design (ICMTD), May 2007, Giens, France
Communication dans un congrès hal-01745578 v1

In-depth Investigation of Hf-based High-k Dielectrics as Storage Layer of Charge-Trap

J. Buckley , Marc Bocquet , G. Molas , M. Gely , P. Brianceau et al.
NVMsIEDM 2006, 2006, San Francisco, United States. pp.XX
Communication dans un congrès hal-00147137 v1

High mobility nanometer-scaled CMOS: opportunities and challenges

T. Ernst , F. Andrieu , O. Weber , C. Dupré , O. Faynot et al.
Third International SiGe Technology and Device Meeting (ISTDM), May 2006, Princeton, New Jersey, United States
Communication dans un congrès hal-00145675 v1

Low Frequency Noise Performance in TiN/HfO2 Fully Depleted SOI nMOSFET

L. Zafari , J. Jomaah , G. Ghibaudo , O. Faynot
IEEE Int. SOI Conference, 2006, USA, United States. pp.XX
Communication dans un congrès hal-00147154 v1

Initial and PBTI-induced traps and charges in Hf(Six)Oy / TiN stacks

G. Reimbold , J. Mitard , X. Garros , C. Leroux , Gérard Ghibaudo et al.
WODIM 06, 2006, Catania, Italy
Communication dans un congrès hal-00145682 v1

Perspectives du Formalisme Dérive Diffusion en Régime Quasi Ballistique pour la Modélisation Analytique des Composants MOS

R. Clerc , P. Palestri , M. Ferrier , Q. Rafhay , G. Pananakakis et al.
GDR Nano, Journées " Simulation et Caractérisation ", 2006, GRENOBLE, France. pp.XX
Communication dans un congrès hal-00148261 v1

Nanoscaled MOSFET transistors on strained Si, SiGe &amp; Ge layers: some integration and electrical feature

Thomas Ernst , Francois Andrieu , Olivier Weber , Jean Michel Hartmann , Cecilia Dupré et al.
210th Meeting of The Electrochemical Society, symposium "SiGe and Ge: Materials, Processing, and Devices", Oct 2006, Cancun, Mexico. pp.# 1496
Communication dans un congrès hal-00145678 v1

Reliability characteristics of 150GHz fT/fmax Heterojunction Bipolar Transistors under reverse, forward and mixed-mode stress

M. Ruat , J. Bourgeat , M. Marin , G. Ghibaudo , N. Revil et al.
Int. Reliability Workshop 2006, 2006, Stanford Sierra, United States. pp.XX
Communication dans un congrès hal-00147143 v1

Electrical Characterization of Single and Multi Gate Device

Gérard Ghibaudo , Sorin Cristoloveanu,
Int. Summer School on Advanced Microelectronics MIGAS 2006, 2006, Autrans, France
Communication dans un congrès hal-00145688 v1

Impact of Film Thickness on LF Noise in SOI Devices

L. Zafari , J. Jomaah , G. Ghibaudo
International Conference on Solid State Devices and Materials (SSDM 2006), 2006, Japan, Japan. pp.XX
Communication dans un congrès hal-00147157 v1

Refined electrical analysis of two charge states transition characteristic of "borderless" silicon nitride

G. Beylier , S. Bruyère , D. Benoit , G. Ghibaudo
WoDIM 2006, 2006, Catania, Italy. pp.XX
Communication dans un congrès hal-00147130 v1

Drain and Gate Current Low Frequency Noise in Biaxially Strained Siliconn-MOSFETs with Ultrathin Gate Oxides

T. Contaret , T. Boutchacha , G. Ghibaudo , F. Bœuf , T. Skotniki
ULIS conference, 2006, Grenoble, France. pp.XX
Communication dans un congrès hal-00146961 v1

New insight on Stress Induced Leakage Current on SiO2/HfO2 stack

M. Rafik , G. Ribes , G. Ghibaudo
XX, 2006, XX, France. pp.XX
Communication dans un congrès hal-00147141 v1

Surface Segregation and Electrical Studies of Heavily Arsenic and Phosphorus in situ Doped Epi and Poly Silicon

G. Borot , L. Rubaldo , N. Breil , J. Boussey , G. Ghibaudo et al.
2006-International-SiGe-Technology-and-Device-Meeting, 2006, CANCUN, Mexico. pp.XX
Communication dans un congrès hal-00147148 v1

Transport parameter extraction in short channel MOS transistors

G. Ghibaudo
Journées du GDR Nanoélectronique, 2006, GRENOBLE, France
Communication dans un congrès hal-00148263 v1

Low Frequency Noise in advanced CMOS devices

Gérard Ghibaudo , J. Jomaah
3rd Int. Symp. On System construction of global network oriented information electronics, 2006, Sendai, Japan
Communication dans un congrès hal-00145666 v1

Experimental evidence of mobility enhancement in short-channel ultra-thin body double-gate MOSFETs

W. Chaisantikulwat , M. Mouis , G. Ghibaudo , S. Cristoloveanu , J. Widiez et al.
36th European Solid-State Device Research Conference (ESSDERC'06), 2006, Genève, Switzerland. Actes pp. 367-370
Communication dans un congrès hal-00147170 v1

Impact of a single grain boundary in the polycrystalline silicon gate on sub 100nm bulk MOSFET characteristics - Implication on matching properties

A. Cathignol , K. Rochereau , G. Ghibaudo
ULIS conference, 2006, Grenoble, France. pp.XX
Communication dans un congrès hal-00146955 v1

Injection Velocity Optimization in Quasi-Ballistic Si-nMOSFETs

M. Ferrier , R. Clerc , Q. Raphay , F. Daugé , Gérard Ghibaudo et al.
Silicon Nanoelectronics Workshop, 2006, Honolulu, United States
Communication dans un congrès hal-00146658 v1

Low Frequency Noise and Fluctuations in sub 0.1µm Bulk and SOI CMOS Technologies

Gérard Ghibaudo , J. Jomaah
MIEL 2005, 2006, Nis, Serbia
Communication dans un congrès hal-00145669 v1

Étude de la mobilité effective dans les DG MOSFET quasi-balistiques

K. Huet , J. Saint-Martin , A. Bournel , G. Ghibaudo , P. Dollfus et al.
xxxx, 2006, Grenoble, France. pp.XX
Communication dans un congrès hal-00148265 v1

Influence of interface coupling on the mobility in FD-SOI MOSFETs

W. Chaisantikulwat , M. Mouis , G. Ghibaudo , S. Cristoloveanu , C. Gallon et al.
NATO International Advanced Research Workshop, 2006, Ukraine, Ukraine. pp.XX
Communication dans un congrès hal-00147174 v1

Influence of interface coupling on the mobility in FDSOI MOSFETs

W. Chaisantikulwat , M. Mouis , G. Ghibaudo , S. Cristoloveanu , C. Gallon et al.
Com à NATO Advanced Research Workshop on Nanoscaled Semiconductor-On-Insulator Structures and Devices, 2006, Ukraine, Ukraine. pp.XX
Communication dans un congrès hal-00147178 v1

Novel 3D integration process for highly scalable Nano-Beam stacked-channels GAA (NBG) CMOSFETs with HfO2/TiN gate stack

T. Ernst , C. Dupre , C. Isheden , E. Bernard , R. Ritzenthaler et al.
IEDM 2006, 2006, San Francisco, United States. pp.XX
Communication dans un congrès hal-00147138 v1

Quantum effects influence on thin silicon film capacitor-less DRAM performance

S. Puget , G. Bossu , A. Regnier , R. Ranica , A. Villaret et al.
International SOI Conference, Oct 2006, New York, United States. pp.157-158
Communication dans un congrès hal-00525093 v1

Improved methodology for the Characterization of Avt MOSFET matching parameter dispersion

A. Cathignol , K. Rochereau , S. Bordez , G. Ghibaudo
IEEE ICMTS 2006, 2006, Grenoble, France. pp.XX
Communication dans un congrès hal-00146936 v1

Impact of emitter resistance mismatch on base and collector current matching in bipolar transistors

S. Danaie , A. Perrotin , G. Ghibaudo , J.-C. Vildeuil , G. Morin et al.
IEEE ICMTS 2006, 2006, Grenoble, France. pp.XX
Communication dans un congrès hal-00146931 v1

Floating Body Effects in 90nm Partially Depleted MOSFETs

L. Zafari , J. Jomaah , G. Ghibaudo
ULIS conference, 2006, GRENOBLE, France. pp.XX
Communication dans un congrès hal-00147163 v1

Low Frequency Noise in Multi-Gate SOI CMOS Devices

L. Zafari , J. Jomaah , G. Ghibaudo
EUROSOI conference, 2006, GRENOBLE, France. pp.XX
Communication dans un congrès hal-00147152 v1

Ultra-thin fully-depleted SOI MOSFETs: special charge properties and coupling effects

S. Eminente , Sorin Cristoloveanu , R. Clerc , A. Ohata , Gérard Ghibaudo
EUROSOI 2006, 2006, Grenoble, France
Communication dans un congrès hal-00146784 v1

Saturation Drain Current analytical modeling of Single Gate Fully Depleted SOI or SON MOSFETs in the Quasi Ballistic Regime of Transport

M. Ferrier , R. Clerc , L. Lucci , Gérard Ghibaudo , A. Vandooren et al.
2006 IEEE International SOI Conference, 2006, Niagara Falls, United States. pp.XX
Communication dans un congrès hal-00146654 v1

Unexpected mobility degradation for very short devices : A new challenge for CMOS scaling

A. Cros , K. Romanjek , D. Fleury , S. Harrison , R. Cerutti et al.
IEDM 2006, 2006, San Francisco, United States. pp.XX
Communication dans un congrès hal-00147133 v1

Investigation of interface defects and bulk charges in metal gate HfO_2 MOSFETs

M.A. Negara , K. Cherkauoi , G. Ghibaudo , D. Bauza , W. Tsaii et al.
European Materials Research Science Spring Meeting, 2006, STRASBOURG, France. pp.XX
Communication dans un congrès hal-00147150 v1

Mobility Extraction in Double-Gate MOSFETs by Magnetoresistance Technique (poster)

W. Chaisantikulwat , M. Mouis , G. Ghibaudo , S. Cristoloveanu , J. Widiez et al.
Journées "Simulation et caractérisation des nanocomposants" du GDR Nanoélectronique, 2006, Grenoble, France. pp.XX
Communication dans un congrès hal-00148279 v1

Quantum effects influence on thin silicon film capacitor-less DRAM performance

S. Puget , G. Bossu , A. Regnier , R. Ranica , A. Villaret et al.
IEEE Int. SOI Conference, 2006, USA, United States. pp.XX
Communication dans un congrès hal-00147145 v1

Impact of TiN post-treatment on Metal Insulator Metal capacitors performances

A. Bajolet , J.P. Manceau , S. Bruyère , R. Clerc , M. Proust et al.
MAM 2006, Materials for Advanced Metallization Conference, 2006, GRENOBLE, France. pp.XX
Communication dans un congrès hal-00146672 v1

Large scale time characterization and analysis of PBTI in HfO2/metal gate stacks

J. Mitard , X. Garros , L.P. Nguyen , Cédric Leroux , G. Ghibaudo et al.
IRPS 2005, 2006, Grenoble, France. pp.XX
Communication dans un congrès hal-00146929 v1
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Unified Analysis of Degraded Base Current in SiGe:C HBTs after Reverse and Forward Reliability Stress

Marie Ruat , Nathalie Revil , Georges Pananakakis , Gérard Ghibaudo
IEEE Bipolar - BiCMOS Circuits and Technology Meeting (BCTM2006), 2006, Maastricht, Netherlands. ⟨10.1109/BIPOL.2006.311156⟩
Communication dans un congrès hal-00147125 v1

Accurate Determination of Flat Band Voltage in advanced MOS structure

Cédric Leroux , G. Ghibaudo , G. Reimbold
WoDIM 2006, 2006, Catania, Italy. pp.XX
Communication dans un congrès hal-00147129 v1

Magnetoresistance Mobility Meaurements in Gate-All-Around SON MOSFETs

W. Chaisantikulwat , M. Mouis , Gérard Ghibaudo , Duncan Kennedy Maude , A. Cros et al.
Workshop Euro-SOI, 2005, GRANADA, Spain. pp.XX
Communication dans un congrès hal-00146521 v1

Magnetoresistance technique for mobility extration in short channel FD-SOI transistors

W. Chaisantikulwat , M. Mouis , Gérard Ghibaudo , C. Gallon , C. Fenouillet-Beranger et al.
35th European Solid-State Device Research Conference (ESSDERC'05), ESSDERC 05, 2005, GRENOBLE, France. pp.569-572
Communication dans un congrès hal-00146565 v1

Electrical characterization of high density trench capacitors, and comparison with planar capacitors

A. Bajolet , J.C. Giraudin , S. Bruyère , C. Rossato , P. Delpech et al.
Workshop sur les nouveaux oxydes à forte permittivité pour l'intégration dans les semiconducteurs, 2005, Autrans, France
Communication dans un congrès hal-00146515 v1

Experimental mobility study of DG-GAA MOSFETs down to 40nm gate length

A. Cros , S. Harrison , P. Coronel , P. Balossier , T. Skotnicki et al.
EUROSOI 2005: First Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits, 2005, Granada, Spain
Communication dans un congrès hal-00146483 v1

New extraction method for gate bias dependent series resistance in nanometric double gate transistors.

A. Cros , S. Harrison , R. Cerutti , P. Coronel , Gérard Ghibaudo et al.
International Conference on Microelectronic Test Structures - ICMTS, 2005, Louvain, Belgium
Communication dans un congrès hal-00146484 v1

In-Depth Study of Strained SGOI nMOSFETs down to 30nm Gate Length

F. Andrieu , T. Ernst , O. Faynot , O. Rozeau , Y. Bogumilowicz et al.
35st European Solid-State Device Research Conference, 2005, Grenoble, France
Communication dans un congrès hal-00146508 v1

3D High Density MIM Capacitors Integrated in BiCMOS Technology

A. Bajolet , C. Giraudin , C. Rossato , L. Pinzelli , S. Bruyère et al.
35th European Solid-State Device Research Conference (ESSDERC'05), 2005, GRENOBLE, France. pp.XX
Communication dans un congrès hal-00146518 v1

Planar glass integrated optical structure based on prism decoupling for sensing application

C.A Sánchez-Pérez , G. Ghibaudo , J.E. Broquin
Photonic Integration, Proc. SPIE 5728, 2005, SAN JOSE CA, United States. pp.XX
Communication dans un congrès hal-00148004 v1

Experimental Investigation of Low and High Field Transport in Substrate- and Process-Induced Strained Nanoscaled MOSFETs

F. Andrieu , T. Ernst , F. Lime , F. Rochette , K. Romanjek et al.
Symposium on VLSI Technology, 2005, Kyoto, Japan. pp.XX
Communication dans un congrès hal-00146481 v1

Investigation of the Effective Field Impact on the Carrier Mobility in sub-100nm MOSFETs

F. Andrieu , T. Ernst , Gérard Ghibaudo , S. Deleonibus
ULtimate Integration of Silicon (ULIS) Workshop, 2005, Bologne, Italy
Communication dans un congrès hal-00146505 v1
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Modelling of the Programming Window Distribution in Multi Nanocrystals Memories

Luca Perniola , Barbara De Salvo , Gérard Ghibaudo , Armando Foglio Para , Georges Pananakakis et al.
ESSDERC, 2003, Lisbon, Portugal. ⟨10.1109/TNANO.2003.820782⟩
Communication dans un congrès hal-00485165 v1

Influence of dots size and dots number fluctuations on the electrical characteristics of multi nanocrystal memory devices

L. Perniola , B. de Salvo , T. Baron , G. Ghibaudo , S. Lombardo
WODIM 2002, 2002, Grenoble, France
Communication dans un congrès hal-00486141 v1

Nano crystal memory devices characterization using the charge pumping technique

P. Masson , L. Militaru , B. de Salvo , G. Ghibaudo , V. Celibert et al.
ESSDERC, 2002, Irlande, Ireland
Communication dans un congrès hal-00484546 v1

Low Temperature Characterization and Modeling of FDSOI Transistors for Cryo CMOS Applications

Mikaël Cassé , Gérard Ghibaudo
Low-Temperature Technologies [Working Title], IntechOpen, 2021, ⟨10.5772/intechopen.98403⟩
Chapitre d'ouvrage hal-03309147 v1
Image document

Noise and Fluctuations in Fully Depleted Silicon-On-Insulator MOSFETs

Christoforos Theodorou , Gérard Ghibaudo
Noise in Nanoscale Semiconductor Devices, 2020
Chapitre d'ouvrage hal-03090062 v1

Nanowire Devices

Gérard Ghibaudo , Sylvain Barraud , Mikaël Cassé , Xin Peng Wang , Guo Qiang Lo et al.
Ed. by F. Balestra. Beyond‐CMOS Nanodevices 2, Wiley-ISTE, pp.25-95, 2014, Nanoscience and Nanotechnology Series, 978-1-84821-655-6 978-1-11898-513-7. ⟨10.1002/9781118985137.ch2⟩
Chapitre d'ouvrage hal-02051240 v1

Electron and Hole Mobility in Semiconductor Devices

Quentin Rafhay , Gérard Ghibaudo
Ed. by J.G. Webster. Wiley Encyclopedia of Electrical and Electronics Engineering, John Wiley & Sons, Inc., 2014, ⟨10.1002/047134608X.W3148.pub2⟩
Chapitre d'ouvrage hal-01959198 v1

Sensitivity of silicon nanowire biochemical sensors

Pierpaolo Palestri , Mireille Mouis , Aryan Afzalian , Luca Selmi , Federico Pittino et al.
F. Balestra. Beyond CMOS Nanodevices 1, Wiley-ISTE, pp.43-64, 2014, Nanoscience and nanotechnology series, 978-1-84821-654-9, 978-1-11898-477-2. ⟨10.1002/9781118984772.ch3⟩
Chapitre d'ouvrage hal-01059156 v1

Modeling of End of the Roadmap nMOSFET with Alternative Channel Material

Quentin Rafhay , R. Clerc , G. Ghibaudo , P. Palestri , L. Selmi
Nanoscale CMOS: Innovative Materials, Modeling and Characterization, John Wiley & Sons, Inc., pp.287-334, 2013
Chapitre d'ouvrage hal-01959425 v1

Special issue of selected papers from "35th ESSDERC Conference", volume 50, Elsevier Sciences

G. Ghibaudo , T. Skotnicki
Elsevier Sciences. Special issue of selected papers from "35th ESSDERC Conference", volume 50, Elsevier Sciences, Guest editors, pp.volume 50, 2006
Chapitre d'ouvrage hal-00148996 v1

Proceedings of the 35th European Solid-State Device Research Conference (ESSDERC 05)

G. Ghibaudo , T. Skotnicki , S. Cristoloveanu , M. Brillouet
Proceedings of the 35th European Solid-State Device Research Conference (ESSDERC 05), IEEE/Color Press, pp.XX, 2005
Chapitre d'ouvrage hal-00148991 v1

Electron and Hole Mobility in Semiconductor Devices

Gérard Ghibaudo
Ed. by J. G. Webster. Wiley Encyclopedia of Electrical and Electronics Engineering, John Wiley & Sons, Inc., 1999, 9780471346081. ⟨10.1002/047134608X.W3148⟩
Chapitre d'ouvrage hal-02061260 v1

Low Temperature Electrical Characteristics of Si Nanonet Field Effect Transistors

T. Cazimajou , M. Legallais , T.T.T. Nguyen , Mireille Mouis , C. Ternon et al.
2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Apr 2019, Grenoble, France. IEEE, pp.1-4, 2020, ⟨10.1109/EUROSOI-ULIS45800.2019.9041882⟩
Proceedings/Recueil des communications hal-04925576 v1

Low-frequency Noise Characterization of Si Nanonet Field Effect Transistors

Thibauld Cazimajou , Christoforos Theodorou , Thuy Thi Nguyen , Maxime Legallais , Mireille Mouis et al.
25th International Conference on Noise and Fluctuations (ICNF), Jun 2019, Neuchatel, Switzerland. ICLAB, p180-183, 2019, ⟨10.5075/epfl-ICLAB-ICNF-269289⟩
Proceedings/Recueil des communications hal-04925581 v1
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NH 3 treatments of Hf-based layers for application as NVM active dielectrics

Marc Bocquet , G. Molas , E. Martínez , H. Grampeix , F. Martin et al.
IEEE Semiconductor Interface Specialists Conference (SISC), Dec 2007, Arlington, United States
Poster de conférence hal-01745607 v1