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Gerard Ghibaudo

Gérard Ghibaudo, Fellow IEEE 2013-2022, was born in France in 1954. He graduated from Grenoble Institute of Technology in 1979 and obtained the PhD degree in Electronics in 1981, the State Thesis degree in Physics in 1984 and the PhD supervision habilitation diploma in 1986 from Grenoble University. He was CNRS PhD student from 1979 to 1981 and became associate researcher at CNRS in 1981 in LPCS laboratory (Grenoble). He was finally promoted Director of Research at CNRS in 1992 (exceptional class in 2014). He was Director of IMEP-LAHC Laboratory located at MINATEC-INPG center from 2007 to 2013. During the academic year 1987-1988, he spent a sabbatical year at Naval Research Laboratory in Washington, DC (USA) where he worked on the characterization of MOSFETs. His main research activities were in the field of electronics transport, oxidation of silicon, MOS device physics, fluctuations and low frequency noise and dielectric reliability. He participated to over 20 European projects and was responsible for over 50 research contracts. Dr. G. Ghibaudo has supervised over 125 PhD students in his career. He was co-founder of the First European Workshop on Low Temperature Electronics (WOLTE 94) and organizer of 20 Workshops/Summer School during the last 40 years. Dr. G. Ghibaudo was member of the Editorial board of Solid State Electronics and served as associate editor of Microelectronics reliability journal and Journal of Active and Passive Electronic Component. During his career he authored over 596 articles in International Refereed Journals and 762 communications in International Conferences. He participated to 86 invited papers in International Conferences and he wrote 34 book chapters. Dr. G. Ghibaudo featured over 952 items and 13.945 citations in Web of Science where he had an H index of 48. G. Ghibaudo is ranking 14% world top researcher among Elsevier Standford 100,000 top-scientists.
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Documents

Publications

New insights into low frequency noise (LFN) sources analysis in GaN/Si MIS-HEMTs

R. Kom Kammeugne , C. Theodorou , C. Leroux , L. Vauche , X. Mescot
Solid-State Electronics, 2023, 200, pp.108555. ⟨10.1016/j.sse.2022.108555⟩
Journal articles hal-03897338v1
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Numerical simulation of electro-thermal properties in FDSOI MOSFETs down to deep cryogenic temperatures

Gérard Ghibaudo , Francis Balestra
Journal of Electronics and Electrical Engineering, 2023, 2 (1), pp.2498. ⟨10.37256/jeee.2120232498⟩
Journal articles hal-04246042v1

On the Fluctuation–Dissipation of the Oxide Trapped Charge in a MOSFET Operated Down to Deep Cryogenic Temperatures

G. Ghibaudo
Fluctuation and Noise Letters, 2023, ⟨10.1142/S0219477523500451⟩
Journal articles hal-04264285v1

On the fluctuation-dissipation of the oxide trapped charge in a MOSFET operated down to deep cryogenic temperatures

Gérard Ghibaudo
Fluctuation and Noise Letters, 2023, ⟨10.1142/S0219477523500451⟩
Journal articles hal-04126191v1

Numerical Simulation of Electro-Thermal Properties in FDSOI MOSFETs Down to Deep Cryogenic Temperatures

Gérard Ghibaudo
Journal of Electrical and Electronic Engineering, 2023
Journal articles hal-04126208v1

Cryogenic MOSFET Subthreshold Current: From Resistive Networks to Percolation Transport in 1-D Systems

E. Catapano , M. Cassé , G. Ghibaudo
IEEE Transactions on Electron Devices, 2023, pp.1-6. ⟨10.1109/TED.2023.3283941⟩
Journal articles hal-04134155v1
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On-wafer drain current aariability in GaN MIS-HEMT on 200-mm silicon substrates

Romeo Kom Kammeugne , Charles Leroux , Christoforos Theodorou , Laura Vauche , Matthew Charles
Journal of Electronics and Electrical Engineering, 2023, 2 (1), pp.12-23. ⟨10.37256/jeee.2120232132⟩
Journal articles hal-04305208v1
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Channel-Width-Dependent Mobility Degradation in Bulk Conduction Regime of Tri-Gate Junctionless Transistors

Dae-Young Jeon , Mireille Mouis , Sylvain Barraud , Gerard Ghibaudo
IEEE Transactions on Electron Devices, 2022, 69 (6), pp.3037-3041. ⟨10.1109/TED.2022.3172056⟩
Journal articles hal-03697387v1
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Modelling of self-heating effect in FDSOI and bulk MOSFETs operated in deep cryogenic conditions

Gérard Ghibaudo , M. Cassé , F. Serra Di Santa Maria , C. Theodorou , Francis Balestra
Solid-State Electronics, 2022, ⟨10.1016/j.sse.2022.108265⟩
Journal articles hal-03852787v1
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Comprehensive Kubo-Greenwood modelling of FDSOI MOS devices down to deep cryogenic temperatures

Francesco Serra Di Santa Maria , Lauriane Contamin , Mikaël Cassé , Christoforos Theodorou , Francis Balestra
Solid-State Electronics, 2022, 192, pp.108271. ⟨10.1016/j.sse.2022.108271⟩
Journal articles hal-04246049v1
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Model Implementation of Lorentzian Spectra for Circuit Noise Simulations in the Frequency Domain

Angeliki Tataridou , Gerard Ghibaudo , Christoforos Theodorou
IEEE Journal of the Electron Devices Society, 2022, 10, pp.611-619. ⟨10.1109/JEDS.2022.3178352⟩
Journal articles hal-03762363v1
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Impact of channel length on the operation of junctionless transistors with substrate biasing

Dae-Young Jeon , Mireille Mouis , Sylvain Barraud , Gérard Ghibaudo
IEEE Transactions on Electron Devices, 2021, 68 (6), pp.3070-3073. ⟨10.1109/TED.2021.3069936⟩
Journal articles hal-03194757v1
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New Compact Modeling Solutions for Organic and Amorphous Oxide TFTs

Benjamin Iniguez , Arokia Nathan , Alexander Kloes , Yvan Bonnassieux , Krunoslav Romanjek
IEEE Journal of the Electron Devices Society, 2021, 9, pp.911-932. ⟨10.1109/JEDS.2021.3106836⟩
Journal articles hal-03325532v1

Statistical and electrical modeling of FDSOI four-gate qubit MOS devices at room temperature

Edoardo Catapano , Gerard Ghibaudo , Mikael Casse , Tadeu Mota Frutuoso , Bruna Cardoso Paz
IEEE Journal of the Electron Devices Society, 2021, 9, pp.582-590. ⟨10.1109/JEDS.2021.3082201⟩
Journal articles hal-03455220v1

Impact of Hot Carrier Aging on the 1/f and Random Telegraph Noise of Short-Channel Triple-Gate Junctionless MOSFETs

Theodoros Oproglidis , Theano Karatsori , Christoforos Theodorou , Andreas Tsormpatzoglou , Sylvain Barraud
IEEE Transactions on Device and Materials Reliability, 2021, 21 (3), pp.348-353. ⟨10.1109/TDMR.2021.3094510⟩
Journal articles hal-03334750v1
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Lambert-W Function-based Parameter Extraction for FDSOI MOSFETs Down to Deep Cryogenic Temperatures

F. Serra Di Santa Maria , L. Contamin , B. Cardoso Paz , M. Cassé , Christoforos Theodorou
Solid-State Electronics, 2021, 186, pp.108175. ⟨10.1016/j.sse.2021.108175⟩
Journal articles hal-03368225v1

Intrinsic Mechanism of Mobility Collapse in Short MOSFETs

Sorin Cristoloveanu , Gerard Ghibaudo
IEEE Transactions on Electron Devices, 2021, 68 (10), pp.5090-5094. ⟨10.1109/TED.2021.3105083⟩
Journal articles hal-03353319v1

Analysis of MIS-HEMT Device Edge Behavior for GaN Technology Using New Differential Method

R. Kom Kammeugne , C. Leroux , J. Cluzel , L. Vauche , C. Le Royer
IEEE Transactions on Electron Devices, In press, pp.1-5. ⟨10.1109/TED.2020.3015466⟩
Journal articles cea-02972351v1
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A Method for Series-Resistance-Immune Extraction of Low-Frequency Noise Parameters in Nanoscale MOSFETs

Angeliki Tataridou , Gerard Ghibaudo , Christoforos Theodorou
IEEE Transactions on Electron Devices, 2020, 67 (11), pp.4568-4572. ⟨10.1109/TED.2020.3026612⟩
Journal articles hal-03260917v1
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Impact of Hot Carrier Aging on the Performance of Triple-Gate Junctionless MOSFETs

Theodoros Oproglidis , Theano Karatsori , Christoforos Theodorou , Andreas Tsormpatzoglou , Sylvain Barraud
IEEE Transactions on Electron Devices, 2020, 67 (2), pp.424-429. ⟨10.1109/TED.2019.2958457⟩
Journal articles hal-02461975v1

Modelling and analysis of gate leakage current and its wafer level variability in advanced FD-SOI MOSFETs

Krishna Pradeep , Thierry Poiroux , Patrick Scheer , Andre Juge , Gérard Ghibaudo
Solid-State Electronics, 2020, 163, pp.107643. ⟨10.1016/j.sse.2019.107643⟩
Journal articles hal-02321948v1

Cryogenic Operation of Thin-Film FDSOI nMOS Transistors: The Effect of Back Bias on Drain Current and Transconductance

M. Casse , B. Cardoso Paz , G. Ghibaudo , T. Poiroux , S. Barraud
IEEE Transactions on Electron Devices, 2020, 67 (11), pp.4636-4640. ⟨10.1109/TED.2020.3022607⟩
Journal articles hal-02991460v1
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Performance and Low-Frequency Noise of 22-nm FDSOI Down to 4.2 K for Cryogenic Applications

Bruna Cardoso Paz , Mikaël Cassé , Christoforos Theodorou , Gérard Ghibaudo , Thorsten Kammler
IEEE Transactions on Electron Devices, 2020, 67 (11), pp.4563-4567. ⟨10.1109/TED.2020.3021999⟩
Journal articles hal-02969741v1
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Analysis of the Role of Inter-Nanowire Junctions on Current Percolation Effects in Silicon Nanonet Field-Effect Transistors

T. Cazimajou , M. Mouis , M. Legallais , T.T.T. Nguyen , C. Ternon
Solid-State Electronics, 2020, pp.107725. ⟨10.1016/j.sse.2019.107725⟩
Journal articles hal-02380107v1

Evidence of 2D intersubband scattering in thin film fully depleted silicon-on-insulator transistors operating at 4.2 K

L. Le Guevel , G. Billiot , Bruna Cardoso Paz , M. Tagliaferri , Silvano de Franceschi
Applied Physics Letters, 2020, 116 (24), pp.243502. ⟨10.1063/5.0007100⟩
Journal articles hal-03541768v1
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On the modelling of temperature dependence of subthreshold swing in MOSFETs down to cryogenic temperature

Gérard Ghibaudo , Mohamed Aouad , Mikaël Cassé , Sebastien Martinie , Francis Balestra
Solid-State Electronics, 2020, ⟨10.1016/j.sse.2020.107820⟩
Journal articles hal-03368147v1
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Channel width dependent subthreshold operation of tri-gate junctionless transistors

Dae-Young Jeon , Mireille Mouis , Sylvain Barraud , Gérard Ghibaudo
Solid-State Electronics, 2020, 171, pp.107860. ⟨10.1016/j.sse.2020.107860⟩
Journal articles hal-02922783v1
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(Invited) Second Harmonic Generation: A Powerful Non-Destructive Characterization Technique for Dielectric-on-Semiconductor Interfaces

Irina Ionica , Dimitrios Damianos , Anne Kaminski-Cachopo , Danièle Blanc-Pelissier , Gérard Ghibaudo
ECS Transactions, 2020, 97 (1), pp.119-130. ⟨10.1149/09701.0119ecst⟩
Journal articles hal-02861584v1
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Precise Extraction of Charge Carrier Mobility for Organic Transistors

Yong Xu , Yun Li , Songlin Li , Francis Balestra , Gérard Ghibaudo
Advanced Functional Materials, 2020, Emerging Thin‐Film Transistor Technologies and Applications, 30 (20), pp.1904508. ⟨10.1002/adfm.201904508⟩
Journal articles hal-02998279v1

A New Direct Measurement Method of Time Dependent Dielectric Breakdown at High Frequency

Melissa Arabi , Xavier Garros , Jacques Cluzel , Mustapha Rafik , Xavier Federspiel
IEEE Electron Device Letters, 2020, 41 (10), pp.1460-1463. ⟨10.1109/LED.2020.3016383⟩
Journal articles hal-02961016v1

Drain current local variability analysis in nanoscale junctionless FinFETs utilizing a compact model

T.A. Oproglidis , D.H. Tassis , A. Tsormpatzoglou , G. Ghibaudo , C.A. Dimitriadis
Solid-State Electronics, 2020, 170, pp.107835. ⟨10.1016/j.sse.2020.107835⟩
Journal articles hal-02991445v1

Parameter Extraction and Compact Modeling of OTFTs From 150 K to 350 K

Harold Cortes-Ordonez , C. Haddad , Xavier Mescot , Krunoslav Romanjek , Gérard Ghibaudo
IEEE Transactions on Electron Devices, 2020, pp.1-8. ⟨10.1109/TED.2020.3032082⟩
Journal articles hal-02991438v1
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Improvement of AlN Film Quality Using Plasma Enhanced Atomic Layer Deposition with Substrate Biasing

Maxime Legallais , Hussein Mehdi , Sylvain David , Franck Bassani , Sébastien Labau
ACS Applied Materials & Interfaces, 2020, 12 (35), pp.39870-39880. ⟨10.1021/acsami.0c10515⟩
Journal articles hal-03030507v1

A2RAM compact modeling: From DC to 1T-DRAM memory operation

F. Tcheme Wakam , J. Lacord , M. Bawedin , S. Martinie , S. Cristoloveanu
Solid-State Electronics, 2020, 168, pp.107731. ⟨10.1016/j.sse.2019.107731⟩
Journal articles hal-02991446v1
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Controlling the effective channel thickness of junctionless transistors by substrate bias

Dae-Young Jeon , Mireille Mouis , Sylvain Barraud , Gérard Ghibaudo
IEEE Transactions on Electron Devices, 2020, 67 (11), pp.4736 - 4740. ⟨10.1109/TED.2020.3020284⟩
Journal articles hal-02963340v1
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Effects of Contact Potential and Sidewall Surface Plane on the Performance of GaN Vertical Nanowire MOSFETs for Low-Voltage Operation

Dong-Hyeok Son , Terirama Thingujam , Jeong-Gil Kim , Dae-Hyun Kim , In Man Kang
IEEE Transactions on Electron Devices, 2020, 67 (4), pp.1547-1552. ⟨10.1109/TED.2020.2975599⟩
Journal articles hal-02969751v1

1/ f noise analysis in high mobility polymer-based OTFTs with non-fluorinated dielectric

Wondwosen Muhea , K. Romanjek , X. Mescot , C. Theodorou , M. Charbonneau
Applied Physics Letters, 2019, 114 (24), pp.243301. ⟨10.1063/1.5093266⟩
Journal articles hal-02161717v1

Analysis and Compact Modeling of Gate Capacitance in Organic Thin-Film Transistors

H. Cortes-Ordonez , S. Jacob , F. Mohamed , G. Ghibaudo , B. Iñiguez
IEEE Transactions on Electron Devices, 2019, pp.1-5. ⟨10.1109/TED.2019.2906827⟩
Journal articles hal-02113591v1

Upgrade of Drain Current Compact Model for Nanoscale Triple-Gate Junctionless Transistors to Continuous and Symmetric

T. Oproglidis , A. Tsormpatzoglou , C. Theodorou , T. Karatsori , G. Ghibaudo
IEEE Transactions on Electron Devices, 2019, 66 (10), pp.4486-4489. ⟨10.1109/TED.2019.2937159⟩
Journal articles hal-02321988v1

Impact of Wet Treatments on the Electrical Performance of Ge 0.9 Sn 0.1 -Based p-MOS Capacitors

Mohamed Aymen Mahjoub , Thibault Haffner , Sébastien Labau , Etienne Eustache , Joris Aubin
ACS Applied Electronic Materials, 2019, 1 (2), pp.260-268. ⟨10.1021/acsaelm.8b00099⟩
Journal articles hal-02051071v1

Impact of CMOS TiN metal gate process on microstructure and its correlation with electrical properties

Pushpendra Kumar , Florian Domengie , Charles Leroux , Patrice Gergaud , G. Ghibaudo
MRS Advances, 2019, pp.1-7. ⟨10.1557/adv.2019.77⟩
Journal articles hal-02051062v1
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Characterization and modeling of 2DEG mobility in AlGaN/AlN/GaN MIS-HEMT

I. Nifa , C. Leroux , A. Torrès , M. Charles , G. Reimbold
Microelectronic Engineering, 2019, 215, pp.110976. ⟨10.1016/j.mee.2019.05.003⟩
Journal articles hal-02145457v1

Analytical expression of top surface charge sensitivity in fully depleted semiconductor on insulator MOS transistor

G. Ghibaudo , G. Pananakakis
Composants nanoélectroniques, 2019, 2 (1), ⟨10.21494/ISTE.OP.2019.0347⟩
Journal articles hal-02067076v1

Temperature dependence of TDDB at high frequency in 28FDSOI

M. Arabi , X. Federspiel , F. Cacho , M. Rafik , A.-P. Nguyen
Microelectronics Reliability, 2019, 100-101, pp.113422. ⟨10.1016/j.microrel.2019.113422⟩
Journal articles hal-02361447v1

Endurance Statistical Behavior of Resistive Memories Based on Experimental and Theoretical Investigation

Diego Alfaro Robayo , Gilbert Sassine , Quentin Rafhay , Gérard Ghibaudo , Gabriel Molas
IEEE Transactions on Electron Devices, 2019, pp.1-8. ⟨10.1109/TED.2019.2911661⟩
Journal articles hal-02126884v1

Charge Pumping in Ultrathin SOI Tunnel FETs: Impact of Back-Gate Voltage

Carlos Diaz Llorente , Christoforos Theodorou , Jean-Pierre Colinge , Sorin Cristoloveanu , Sébastien Martinie
ECS Transactions, In press, 89 (3), pp.111-120. ⟨10.1149/08903.0111ecst⟩
Journal articles hal-02415983v1

New Insights on device level TDDB at GHz speed in advanced CMOS nodes

M. Arabi , X. Federspiel , F. Cacho , M. Rafik , A.-P. Nguyen
IEEE Transactions on Device and Materials Reliability, 2019, pp.1-1. ⟨10.1109/TDMR.2019.2914362⟩
Journal articles hal-02118352v1
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Doping profile extraction in thin SOI films: Application to A2RAM

F. Tcheme Wakam , J. Lacord , M. Bawedin , S. Martinie , S. Cristoloveanu
Solid-State Electronics, 2019, 159, pp.3-11. ⟨10.1016/j.sse.2019.03.038⟩
Journal articles hal-02321935v1

Analysis of the Electrical Properties of Different HgCdTe Passivations for Infrared Detectors

L. Mangin , F. Rochette , C. Lobre , P. Ballet , P. Duvaut
Journal of Electronic Materials, 2019, ⟨10.1007/s11664-019-07253-z⟩
Journal articles hal-02136323v1
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Reliable Mobility Evaluation of Organic Field-Effect Transistors with Different Contact Metals

Fanming Huang , Ao Liu , Huihui Zhu , Yong Xu , Francis Balestra
IEEE Electron Device Letters, 2019, 40 (4), pp.605 - 608. ⟨10.1109/LED.2019.2901315⟩
Journal articles hal-02050199v1

Electrical characterization of advanced FDSOI CMOS devices

Gérard Ghibaudo
Composants nanoélectroniques, 2019, 2 (1), ⟨10.21494/ISTE.OP.2018.0304⟩
Journal articles hal-02010907v1
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New prospects on high on-current and steep subthreshold slope for innovative Tunnel FET architectures

C. Diaz Llorente , J.-P. Colinge , S. Martinie , S. Cristoloveanu , J. Wan
Solid-State Electronics, 2019, 159, pp.26-37. ⟨10.1016/j.sse.2019.03.046⟩
Journal articles hal-02321885v1

Self-Heating Effect in FDSOI Transistors Down to Cryogenic Operation at 4.2 K

K. Triantopoulos , M. Cassé , S. Barraud , S. Haendler , E. Vincent
IEEE Transactions on Electron Devices, 2019, pp.1-8. ⟨10.1109/TED.2019.2919924⟩
Journal articles hal-02161716v1
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Novel On-Resistance based Methodology for MOSFET Electrical Characterization

T.A. Karatsori , K. Bennamane , Gérard Ghibaudo
Solid-State Electronics, 2019, pp.107722. ⟨10.1016/j.sse.2019.107722⟩
Journal articles hal-02379974v1

Impact of contact and channel resistance on the frequency-dependent capacitance and conductance of pseudo-MOSFET

S. Sato , G. Ghibaudo , L. Benea , I. Ionica , Y. Omura
Solid-State Electronics, 2019, 159, pp.197-203. ⟨10.1016/j.sse.2019.03.059⟩
Journal articles hal-02321909v1

New Concept of Differential Effective Mobility in MOS Transistors

K. Bennamane , G. Ghibaudo
Active and Passive Electronic Components, 2019, 2019, pp.5716230. ⟨10.1155/2019/5716230⟩
Journal articles hal-02059162v1

On the cumulative distribution function of the defect centric model for BTI reliability

D. Nouguier , G. Pananakakis , X. Federspiel , M. Rafik , D. Roy
Microelectronics Reliability, 2019, 92, pp.168-171. ⟨10.1016/j.microrel.2018.12.003⟩
Journal articles hal-01953979v1

New perspectives in defect centric model for NBTI reliability

D. Nouguier , G. Ghibaudo , X. Federspiel , M. Rafik , D. Roy
Microelectronics Reliability, 2019, 98, pp.119-123. ⟨10.1016/j.microrel.2019.05.010⟩
Journal articles hal-02136328v1

Low-Frequency Noise Characteristics of GaN Nanowire Gate-All-Around Transistors With/Without 2-DEG Channel

Ki-Sik Im , M. Siva Pratap Reddy , Raphaël Caulmilone , Christoforos Theodorou , Gérard Ghibaudo
IEEE Transactions on Electron Devices, 2019, 66 (3), pp.1243 - 1248. ⟨10.1109/TED.2019.2894806⟩
Journal articles hal-02047570v1

Bottom-up fabrication of InAs-on-nothing MOSFET using selective area molecular beam epitaxy

Matej Pastorek , Aurélien Olivier , Yoann Lechaux , Nicolas Wichmann , Theano Karatsori
Nanotechnology, 2019, 30 (3), pp.035301. ⟨10.1088/1361-6528/aaebbd⟩
Journal articles hal-01955057v1

Lambert W-function based modelling of P-OTFTs and application to low temperature measurements

Clara Haddad , Stéphanie Jacob , Micaël Charbonneau , Amélie Revaux , Gérard Ghibaudo
Organic Electronics, 2018, 62, pp.610-614. ⟨10.1016/j.orgel.2018.06.037⟩
Journal articles hal-01948062v1

Series resistance in different operation regime of junctionless transistors

Dae-Young Jeon , So Jeong Jeon , Mireille Mouis , Sylvain Barraud , Gyu-Tae Kim
Solid-State Electronics, 2018, 141, pp.92-95. ⟨10.1016/j.sse.2017.12.013⟩
Journal articles hal-01948025v1

A Simple Method for Estimation of Silicon Film Thickness in Tri-Gate Junctionless Transistors

Dae-Young Jeon , So Jeong Park , Mireille Mouis , Sylvain Barraud , Gyu-Tae Kim
IEEE Electron Device Letters, 2018, 39 (9), pp.1282-1285. ⟨10.1109/LED.2018.2857623⟩
Journal articles hal-01948046v1

Determination of well flat band condition in thin film FDSOI transistors using C-V measurement for accurate parameter extraction

B. Mohamad , C. Leroux , G. Reimbold , G. Ghibaudo
Solid-State Electronics, 2018, 139, pp.88-93. ⟨10.1016/j.sse.2017.10.038⟩
Journal articles hal-01948022v1

Compact modeling of nanoscale triple-gate junctionless transistors covering drift-diffusion to quasi-ballistic carrier transport

T.A. Oproglidis , T.A. Karatsori , S. Barraud , G. Ghibaudo , C.A. Dimitriadis
Solid-State Electronics, 2018, 142, pp.25-30. ⟨10.1016/j.sse.2018.01.005⟩
Journal articles hal-01948027v1

Analysis and modeling of wafer-level process variability in 28 nm FD-SOI using split C-V measurements

Krishna Pradeep , Thierry Poiroux , Patrick Scheer , Andre Juge , Gilles Gouget
Solid-State Electronics, 2018, 145, pp.19-28. ⟨10.1016/j.sse.2018.04.001⟩
Journal articles hal-01948041v1

Effect of Temperature on the Performance of Triple-Gate Junctionless Transistors

Theodoros Oproglidis , Theano Karatsori , Sylvain Barraud , Gérard Ghibaudo , Charalabos Dimitriadis
IEEE Transactions on Electron Devices, 2018, 65 (8), pp.3562-3566. ⟨10.1109/TED.2018.2839196⟩
Journal articles hal-01948044v1

Electrical characteristics of silicon percolating nanonet-based field effect transistors in the presence of dispersion

T. Cazimajou , M. Legallais , M. Mouis , C. Ternon , B. Salem
Solid-State Electronics, 2018, 143, pp.83-89. ⟨10.1016/j.sse.2017.11.013⟩
Journal articles hal-01948032v1
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Field-effect passivation of Si by ALD-Al2O3: second harmonic generation monitoring and simulation

D Damianos , G. Vitrant , A. Kaminski-Cachopo , D. Blanc-Pélissier , G. Ghibaudo
Journal of Applied Physics, 2018, 124 (12), pp.125309. ⟨10.1063/1.5041062⟩
Journal articles hal-01883529v1

Static and low frequency noise characterization of ultra-thin body InAs MOSFETs

T.A. Karatsori , M. Pastorek , C.G. Theodorou , A. Fadjie , Nicolas Wichmann
Solid-State Electronics, 2018, 143, pp.56-61. ⟨10.1016/j.sse.2017.12.001⟩
Journal articles hal-01948029v1

Origin of Low-Frequency Noise in Triple-Gate Junctionless n-MOSFETs

Theodoros Oproglidis , Theano Karatsori , Christoforos Theodorou , Dimitrios Tassis , Sylvain Barraud
IEEE Transactions on Electron Devices, 2018, 65 (12), pp.5481-5486. ⟨10.1109/TED.2018.2873838⟩
Journal articles hal-02002330v1

Study of forward AC stress degradation of GaN-on-Si Schottky diodes

T. Lorin , W. Vandendaele , R. Gwoziecki , C. Gillot , J. Biscarrat
Microelectronics Reliability, 2018, 88-90, pp.641-644. ⟨10.1016/j.microrel.2018.07.103⟩
Journal articles hal-01948047v1

Analytical expressions for subthreshold swing in FDSOI MOS structures

G. Ghibaudo , G. Pananakakis
Solid-State Electronics, 2018, 149, pp.57-61. ⟨10.1016/j.sse.2018.08.011⟩
Journal articles hal-01948058v1

Essential Effects on the Mobility Extraction Reliability for Organic Transistors

Yong Xu , Huabin Sun , Ao Liu , Huihui Zhu , Binhong Li
Advanced Functional Materials, 2018, 28 (42), pp.1803907. ⟨10.1002/adfm.201803907⟩
Journal articles hal-01948052v1

New NBTI models for degradation and relaxation kinetics valid over extended temperature and stress/recovery ranges

D. Nouguier , X. Federspiel , G. Ghibaudo , M. Rafik , D. Roy
Microelectronics Reliability, 2018, 87, pp.106-112. ⟨10.1016/j.microrel.2018.04.009⟩
Journal articles hal-01948045v1

New insights on SOI Tunnel FETs with low-temperature process flow for CoolCube™ integration

C. Diaz Llorente , C. Le Royer , P. Batude , C. Fenouillet-Beranger , S. Martinie
Solid-State Electronics, 2018, 144, pp.78-85. ⟨10.1016/j.sse.2018.03.006⟩
Journal articles hal-01948037v1

On the Understanding of Cathode Related Trapping Effects in GaN-on-Si Schottky Diodes

Thomas Lorin , William Vandendaele , Romain Gwoziecki , Yannick Baines , Jérôme Biscarrat
IEEE Journal of the Electron Devices Society, 2018, 6, pp.956-964. ⟨10.1109/JEDS.2018.2842100⟩
Journal articles hal-01948024v1

Physics and performance of nanoscale semiconductor devices at cryogenic temperatures

F. Balestra , G. Ghibaudo
Semiconductor Science and Technology, 2017, 32 (2), pp.023002. ⟨10.1088/1361-6641/32/2/023002⟩
Journal articles hal-01947988v1

Reliable gate stack and substrate parameter extraction based on C-V measurements for 14nm node FDSOI technology

B. Mohamad , C. Leroux , D. Rideau , M. Haond , G. Reimbold
Solid-State Electronics, 2017, 128, pp.10-16. ⟨10.1016/j.sse.2016.10.010⟩
Journal articles hal-01947810v1

Ultra-low power 1T-DRAM in FDSOI technology

H. El Dirani , M.S. Parihar , J. Lacord , S. Martinie , J-Ch. Barbe
Microelectronic Engineering, 2017, 178, pp.245-249. ⟨10.1016/j.mee.2017.05.047⟩
Journal articles hal-01948006v1

Impact of low thermal processes on reliability of high-k/metal gate stacks

Artemisia Tsiara , Xavier Garros , Cao-Minh Vincent Lu , Claire Fenouillet-Beranger , Gérard Ghibaudo
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics, 2017, 35 (1), pp.01A114. ⟨10.1116/1.4973905⟩
Journal articles hal-01947807v1

Exploring the Charge Transport in Conjugated Polymers

Yong Xu , Huabin Sun , Wenwu Li , Yen-Fu Li , Francis Balestra
Advanced Materials, 2017, 29 (41), pp.1702729. ⟨10.1002/adma.201702729⟩
Journal articles hal-01948017v1

Leakage current conduction in metal gate junctionless nanowire transistors

T.A. Oproglidis , T.A. Karatsori , S. Barraud , G. Ghibaudo , C.A. Dimitriadis
Solid-State Electronics, 2017, 131, pp.20-23. ⟨10.1016/j.sse.2017.02.003⟩
Journal articles hal-01948000v1

Characterization of 2DEG in AlGaN/GaN heterostructure by Hall effect

Iliass Nifa , Charles Leroux , Alphonse Torres , Matthew Charles , Denis Blachier
Microelectronic Engineering, 2017, 178, pp.128-131. ⟨10.1016/j.mee.2017.05.009⟩
Journal articles hal-01948003v1

Analytical Drain Current Compact Model in the Depletion Operation Region of Short-Channel Triple-Gate Junctionless Transistors

Theodoros Oproglidis , Andreas Tsormpatzoglou , Dimitrios Tassis , Theano Karatsori , Sylvain Barraud
IEEE Transactions on Electron Devices, 2017, 64 (1), pp.66-72. ⟨10.1109/TED.2016.2632753⟩
Journal articles hal-01947806v1

Comparison for 1/ f Noise Characteristics of AlGaN/GaN FinFET and Planar MISHFET

Sindhuri Vodapally , Christoforos Theodorou , Youngho Bae , Gérard Ghibaudo , Sorin Cristoloveanu
IEEE Transactions on Electron Devices, 2017, 64 (9), pp.3634-3638. ⟨10.1109/TED.2017.2730919⟩
Journal articles hal-02006996v1

Physically-based evaluation of aging contributions in HC/FN-programmed 40 nm NOR Flash technology

Giulio Torrente , Jean Coignus , Alexandre Vernhet , Jean-Luc Ogier , David Roy
Microelectronics Reliability, 2017, 79, pp.281-287. ⟨10.1016/j.microrel.2017.05.039⟩
Journal articles hal-01948021v1

All Operation Region Characterization and Modeling of Drain and Gate Current Mismatch in 14-nm Fully Depleted SOI MOSFETs

Theano Karatsori , Christoforos Theodorou , Emmanuel Josse , Charalabos Dimitriadis , G. Ghibaudo
IEEE Transactions on Electron Devices, 2017, 64 (5), pp.2080-2085. ⟨10.1109/TED.2017.2686381⟩
Journal articles hal-01947996v1

1/f-Noise in AlGaN/GaN Nanowire Omega-FinFETs

Sindhuri Vodapally , Young In Jang , In Man Kang , In-Tak Cho , Jong-Ho Lee
IEEE Electron Device Letters, 2017, 38 (2), pp.252-254. ⟨10.1109/LED.2016.2645211⟩
Journal articles hal-01947987v1

Impact of series resistance on the operation of junctionless transistors

Dae-Young Jeon , So Jeong Jeon , Mireille Mouis , Sylvain Barraud , Gyu-Tae Kim
Solid-State Electronics, 2017, 129, pp.103-107. ⟨10.1016/j.sse.2016.12.004⟩
Journal articles hal-01947990v1

Chaotic Behavior of Random Telegraph Noise in Nanoscale UTBB FD-SOI MOSFETs

Dimitrios Tassis , Stavros Stavrinides , Michael Hanias , Christoforos Theodorou , Gérard Ghibaudo
IEEE Electron Device Letters, 2017, 38 (4), pp.517-520. ⟨10.1109/LED.2017.2672783⟩
Journal articles hal-01947995v1

Low Temperature Characterization of Hole Mobility in Sub-14nm Gate Length Si 0.7 Ge 0.3 Tri-Gate pMOSFETs

R. Lavieville , C. Le Royer , S. Barraud , G. Ghibaudo
Journal of Physics: Conference Series, 2017, 834, pp.012001. ⟨10.1088/1742-6596/834/1/012001⟩
Journal articles hal-02072781v1

A New Method for Series Resistance Extraction of Nanometer MOSFETs

Renan Trevisoli , Rodrigo Trevisoli Trevisoli , Michelly de Souza , Sylvain Barraud , Maud Vinet
IEEE Transactions on Electron Devices, 2017, 64 (7), pp.2797-2803. ⟨10.1109/TED.2017.2704928⟩
Journal articles hal-01948007v1

A Link between CBRAM Performances and Material Microscopic Properties Based on Electrical Characterization and Atomistic Simulations

C Nail. , G Molas. , P Blaise. , B Sklenard. , R Berthier.
IEEE Transactions on Electron Devices, 2017, 64 (11), pp.4479-4485. ⟨10.1109/TED.2017.2750910⟩
Journal articles hal-01929355v1

Drain current local variability from linear to saturation region in 28nm bulk NMOSFETs

T.A. Karatsori , C.G. Theodorou , S. Haendler , G. Ghibaudo
Solid-State Electronics, 2017, 128, pp.31-36. ⟨10.1016/j.sse.2016.10.020⟩
Journal articles hal-01947983v1

Quantitative Analysis of La and Al Additives Role on Dipole Magnitude Inducing Vt Shift in High-K/Metal Gate Stack

C. Suarez-Segovia , C. Leroux , F. Domengie , G. Ghibaudo
IEEE Electron Device Letters, 2017, 38 (3), pp.379-382. ⟨10.1109/LED.2017.2651644⟩
Journal articles hal-01947993v1

New Y -function based MOSFET parameter extraction method from weak to strong inversion range

J.B. Henry , Q. Rafhay , A. Cros , G. Ghibaudo
Solid-State Electronics, 2016, 123, pp.84-88. ⟨10.1016/j.sse.2016.06.004⟩
Journal articles hal-01947687v1

Fabrication and electrical characterization of homo- and hetero-structure Si/SiGe nanowire Tunnel Field Effect Transistor grown by vapor–liquid–solid mechanism

V. Brouzet , B. Salem , P. Periwal , R. Alcotte , F. Chouchane
Solid-State Electronics, 2016, 118, pp.26 - 29. ⟨10.1016/j.sse.2016.01.005⟩
Journal articles hal-01882006v1

Microscopic Analysis of Erase-Induced Degradation in 40 nm NOR Flash Technology

Giulio Torrente , Jean Coignus , Alexandre Vernhet , Jean-Luc Ogier , David Roy
IEEE Transactions on Device and Materials Reliability, 2016, 16 (4), pp.597-603. ⟨10.1109/TDMR.2016.2613138⟩
Journal articles hal-01947802v1

Behavior of subthreshold conduction in junctionless transistors

So Jeong Park , Dae-Young Jeon , Laurent Montes , Mireille Mouis , Sylvain Barraud
Solid-State Electronics, 2016, 124, pp.58-63. ⟨10.1016/j.sse.2016.06.007⟩
Journal articles hal-01947688v1

Low-frequency noise in bare SOI wafers: Experiments and model

L. Pirro , I. Ionica , S. Cristoloveanu , G. Ghibaudo
Solid-State Electronics, 2016, 125, pp.167-174. ⟨10.1016/j.sse.2016.07.012⟩
Journal articles hal-01947800v1

Hot carrier degradation modeling of short-channel n-FinFETs suitable for circuit simulators

I. Messaris , T.A. Karatsori , N. Fasarakis , C.G. Theodorou , S. Nikolaidis
Microelectronics Reliability, 2016, 56, pp.10-16. ⟨10.1016/j.microrel.2015.11.002⟩
Journal articles hal-01947672v1

Influence of AC signal oscillator level on effective mobility measurement by split C–V technique in MOSFETs

T.A. Karatsori , G. Ghibaudo , C.A. Dimitriadis , G. Theodorou
Electronics Letters, 2016, 52 (17), pp.1492-1493. ⟨10.1049/el.2016.1715⟩
Journal articles hal-01947685v1

Characterization and modeling of drain current local variability in 28 and 14 nm FDSOI nMOSFETs

E.G. Ioannidis , S. Haendler , E. Josse , N. Planes , G. Ghibaudo
Solid-State Electronics, 2016, 118, pp.4-11. ⟨10.1016/j.sse.2016.01.002⟩
Journal articles hal-01947676v1

Hot-carrier degradation model for nanoscale ultra-thin body ultra-thin box SOI MOSFETs suitable for circuit simulators

T.A. Karatsori , C.G. Theodorou , S. Haendler , N. Planes , G. Ghibaudo
Microelectronic Engineering, 2016, 159, pp.9-16. ⟨10.1016/j.mee.2016.01.035⟩
Journal articles hal-01947682v1

Investigation of Cycle-to-Cycle Variability in HfO 2 -Based OxRAM

Giuseppe Piccolboni , Gabriel Molas , Daniele Garbin , Elisa Vianello , Olga Cueto
IEEE Electron Device Letters, 2016, 37 (6), pp.721-723. ⟨10.1109/LED.2016.2553370⟩
Journal articles hal-02049907v1

Study of Hot-Carrier-Induced Traps in Nanoscale UTBB FD-SOI MOSFETs by Low-Frequency Noise Measurements

Theano Karatsori , Christoforos Theodorou , Xavier Mescot , Sebastien Haendler , Nicolas Planes
IEEE Transactions on Electron Devices, 2016, 63 (8), pp.3222-3228. ⟨10.1109/TED.2016.2583504⟩
Journal articles hal-01947684v1

Low frequency noise variability in ultra scaled FD-SOI n-MOSFETs: Dependence on gate bias, frequency and temperature

C.G. Theodorou , E.G. Ioannidis , S. Haendler , E. Josse , C.A. Dimitriadis
Solid-State Electronics, 2016, 117, pp.88-93. ⟨10.1016/j.sse.2015.11.011⟩
Journal articles hal-01947673v1

Resistive memory variability: A simplified trap-assisted tunneling model

Daniele Garbin , Elisa Vianello , Quentin Rafhay , Mourad Azzaz , Philippe Candelier
Solid-State Electronics, 2016, 115, pp.126-132. ⟨10.1016/j.sse.2015.09.004⟩
Journal articles hal-01947671v1

Interface trap density evaluation on bare silicon-on-insulator wafers using the quasi-static capacitance technique

L. Pirro , I. Ionica , G. Ghibaudo , X. Mescot , L. Faraone
Journal of Applied Physics, 2016, 119 (17), pp.175702. ⟨10.1063/1.4947498⟩
Journal articles hal-01947679v1

Characterization and Modeling of NBTI in Nanoscale UltraThin Body UltraThin Box FD-SOI MOSFETs

Theano Karatsori , Christoforos Theodorou , Sebastien Haendler , Nicolas Planes , Gérard Ghibaudo
IEEE Transactions on Electron Devices, 2016, 63 (12), pp.4913-4918. ⟨10.1109/TED.2016.2620720⟩
Journal articles hal-01947804v1

A comparative mismatch study of the 20nm Gate-Last and 28nm Gate-First bulk CMOS technologies

Lama Rahhal , Aurélie Bajolet , Jean-Philippe Manceau , Julien Rosa , Stéphane Ricq
Solid-State Electronics, 2015, 108, pp.53-60. ⟨10.1016/j.sse.2014.12.006⟩
Journal articles hal-01947642v1

Extensive study of Bias Temperature Instability in nanowire transistors

A. Laurent , X. Garros , S. Barraud , G. Reimbold , D. Roy
Microelectronic Engineering, 2015, 147, pp.10-14. ⟨10.1016/j.mee.2015.04.028⟩
Journal articles hal-01947659v1

Dynamic variability in 14nm FD-SOI MOSFETs and transient simulation methodology

Christoforos Theodorou , Eleftherios Ioannidis , Sebastien Haendler , Charalabos Dimitriadis , Gérard Ghibaudo
Solid-State Electronics, 2015, 111, pp.100-103. ⟨10.1016/j.sse.2015.06.001⟩
Journal articles hal-01947651v1

Analytical Compact Model for Lightly Doped Nanoscale Ultrathin-Body and Box SOI MOSFETs With Back-Gate Control

Theano Karatsori , Andreas Tsormpatzoglou , Christoforos Theodorou , Eleftherios Ioannidis , Sebastien Haendler
IEEE Transactions on Electron Devices, 2015, 62 (10), pp.3117-3124. ⟨10.1109/TED.2015.2464076⟩
Journal articles hal-01947657v1

Analytical Model for the Inversion Gate Capacitance of DG and UTBB MOSFETs at the Quantum Capacitance Limit

Gaspard Hiblot , Quentin Rafhay , Frédéric Boeuf , Gérard Ghibaudo
IEEE Transactions on Electron Devices, 2015, 62 (5), pp.1375-1382. ⟨10.1109/TED.2015.2406116⟩
Journal articles hal-01947637v1

Investigation of Forming, SET, and Data Retention of Conductive-Bridge Random-Access Memory for Stack Optimization

Jeremy Guy , Gabriel Molas , Philippe Blaise , Mathieu Bernard , Anne Roule
IEEE Transactions on Electron Devices, 2015, 62 (11), pp.3482-3489. ⟨10.1109/TED.2015.2476825⟩
Journal articles hal-01947665v1

Modeling of low-frequency noise in advanced CMOS devices

F. Balestra , G. Ghibaudo , J. Jomaah
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2015, 28 (6), pp.613-627. ⟨10.1002/jnm.2052⟩
Journal articles hal-01947663v1

Low temperature characterization of mobility in 14nm FD-SOI CMOS devices under interface coupling conditions

Minju Shin , Ming Shi , Mireille Mouis , Antoine Cros , Emmanuel Josse
Solid-State Electronics, 2015, 108, pp.30-35. ⟨10.1016/j.sse.2014.12.013⟩
Journal articles hal-01947639v1

In depth characterization of electron transport in 14nm FD-SOI CMOS devices

Minju Shin , Ming Shi , Mireille Mouis , Antoine Cros , Emmanuel Josse
Solid-State Electronics, 2015, 112, pp.13-18. ⟨10.1016/j.sse.2015.02.012⟩
Journal articles hal-01947656v1
Image document

Non-Arrhenius conduction due to the interface-trap-induced disorder in X-doped amorphous In-X-Zn oxides thin-film transistors

Mohammed Benwadih , Jan Chroboczek , Gérard Ghibaudo , Romain Coppard , Dominique Vuillaume
Journal of Applied Physics, 2015, 117 (5), pp.055707. ⟨10.1063/1.4907681⟩
Journal articles hal-01947633v1

Impact of Source–Drain Series Resistance on Drain Current Mismatch in Advanced Fully Depleted SOI n-MOSFETs

E. Ioannidis , C. Theodorou , S. Haendler , E. Josse , C. Dimitriadis
IEEE Electron Device Letters, 2015, 36 (5), pp.433-435. ⟨10.1109/LED.2015.2411289⟩
Journal articles hal-01947636v1

Effective work function modulation by $sacrificial$ gate aluminum diffusion on HfON-based 14nm NMOS devices

C. Suarez-Segovia , C. Leroux , P. Caubet , F. Domengie , G. Reimbold
Microelectronic Engineering, 2015, 147, pp.113-116. ⟨10.1016/j.mee.2015.04.062⟩
Journal articles hal-01947661v1

Refined Conformal Mapping Model for MOSFET Parasitic Capacitances Based on Elliptic Integrals

Gaspard Hiblot , Quentin Rafhay , Frédéric Boeuf , Gérard Ghibaudo
IEEE Transactions on Electron Devices, 2015, 62 (3), pp.972-979. ⟨10.1109/TED.2015.2388788⟩
Journal articles hal-01947634v1

Compact modeling of subthreshold swing in double gate and nanowire MOSFETs, for Si and GaAs channel materials

G. Hiblot , Q. Rafhay , F. Boeuf , G. Ghibaudo
Solid-State Electronics, 2015, 111, pp.188-195. ⟨10.1016/j.sse.2015.06.008⟩
Journal articles hal-01947653v1

HfO2-Based OxRAM Devices as Synapses for Convolutional Neural Networks

Daniele Garbin , Elisa Vianello , Olivier Bichler , Quentin Rafhay , Christian Gamrat
IEEE Transactions on Electron Devices, 2015, 62 (8), pp.2494-2501. ⟨10.1109/TED.2015.2440102⟩
Journal articles hal-01947647v1

Split-Capacitance and Conductance-Frequency Characteristics of SOI Wafers in Pseudo-MOSFET Configuration

Luca Pirro , Amer Diab , Irina Ionica , Gérard Ghibaudo , Lorenzo Faraone
IEEE Transactions on Electron Devices, 2015, 62 (9), pp.2717-2723. ⟨10.1109/TED.2015.2454438⟩
Journal articles hal-01947654v1

Compact Model for Inversion Charge in III–V Bulk MOSFET Including Non-Parabolicity

Gaspard Hiblot , Gabriel Mugny , Quentin Rafhay , Frédéric Boeuf , Gérard Ghibaudo
IEEE Transactions on Nanotechnology, 2015, 14 (4), pp.768-775. ⟨10.1109/TNANO.2015.2444653⟩
Journal articles hal-01947645v1

Full gate voltage range Lambert-function based methodology for FDSOI MOSFET parameter extraction

T.A. Karatsori , C.G. Theodorou , E.G. Ioannidis , S. Haendler , E. Josse
Solid-State Electronics, 2015, 111, pp.123-128. ⟨10.1016/j.sse.2015.06.002⟩
Journal articles hal-01947652v1

Physically-based extraction methodology for accurate MOSFET degradation assessment

Giulio Torrente , Jean Coignus , Sophie Renard , Alexandre Vernhet , Gilles Reimbold
Microelectronics Reliability, 2015, 55 (9-10), pp.1417-1421. ⟨10.1016/j.microrel.2015.06.063⟩
Journal articles hal-01947649v1

Magnetoresistance mobility characterization in advanced FD-SOI n-MOSFETs

Minju Shin , Ming Shi , Mireille Mouis , Antoine Cros , Emmanuel Josse
Solid-State Electronics, 2015, 103, pp.229-235. ⟨10.1016/j.sse.2014.07.007⟩
Journal articles hal-01947629v1

Experimental and Theoretical Investigation of Magnetoresistance From Linear Regime to Saturation in 14-nm FD-SOI MOS Devices

Minju Shin , Ming Shi , Mireille Mouis , Antoine Cros , Emmanuel Josse
IEEE Transactions on Electron Devices, 2015, 62 (1), pp.3-8. ⟨10.1109/TED.2014.2366170⟩
Journal articles hal-01947630v1

Modeling the Dynamic Variability Induced by Charged Traps in a Bilayer Gate Oxide

Alexandre Subirats , Xavier Garros , Joanna El Husseini , Emmanuel Vincent , Gilles Reimbold
IEEE Transactions on Electron Devices, 2015, 62 (2), pp.485-492. ⟨10.1109/TED.2014.2380474⟩
Journal articles hal-01947632v1

Drain-Current Flicker Noise Modeling in nMOSFETs From a 14-nm FDSOI Technology

Eleftherios Ioannidis , Christoforos Theodorou , Theano Karatsori , Sebastien Haendler , Charalabos Dimitriadis
IEEE Transactions on Electron Devices, 2015, 62 (5), pp.1574-1579. ⟨10.1109/TED.2015.2411678⟩
Journal articles hal-01947638v1

Fabrication and characterization of silicon nanowire p-i-n MOS gated diode for use as p-type tunnel FET

V. Brouzet , B. Salem , P. Periwal , G. Rosaz , T. Baron
Applied physics. A, Materials science & processing, 2015, 121 (3), pp.1285-1290. ⟨10.1007/s00339-015-9507-3⟩
Journal articles hal-01947669v1

Accurate Boundary Condition for Short-Channel Effect Compact Modeling in MOS Devices

Gaspard Hiblot , Tapas Dutta , Quentin Rafhay , Joris Lacord , Madjid Akbal
IEEE Transactions on Electron Devices, 2015, 62 (1), pp.28-35. ⟨10.1109/TED.2014.2368395⟩
Journal articles hal-01947631v1

On the Origin of Improved Charge Transport in Double-Gate In–Ga–Zn–O Thin-Film Transistors: A Low-Frequency Noise Perspective

Yong Xu , Chuan Liu , Paul Seyram K. Amegadez , Gi-Seong Ryu , Huaixin Wei
IEEE Electron Device Letters, 2015, 36 (10), pp.1040-1043. ⟨10.1109/LED.2015.2467164⟩
Journal articles hal-01947658v1

Assessment of technological and geometrical device parameters by low-frequency noise investigation in SOI omega-gate nanowire NMOS FETs

M. Koyama , M. Cassé , S. Barraud , G. Ghibaudo , H. Iwai
Solid-State Electronics, 2015, 108, pp.36-41. ⟨10.1016/j.sse.2014.12.010⟩
Journal articles hal-01947641v1

Compact model of short-channel effects for FDSOI devices including the influence of back-bias and fringing fields for Si and III–V technology

G. Hiblot , J. Lacord , M. Akbal , Q. Rafhay , F. Boeuf
Solid-State Electronics, 2015, 107, pp.1-7. ⟨10.1016/j.sse.2015.02.001⟩
Journal articles hal-01947635v1

A Combined Ab Initio and Experimental Study on the Nature of Conductive Filaments in Pt/HfO2/Pt Resistive Random Access Memory

Kan-Hao Xue , Boubacar Traoré , Philippe Blaise , Leonardo Fonseca , Elisa Vianello
IEEE Transactions on Electron Devices, 2014, 61 (5), pp.1394-1402. ⟨10.1109/TED.2014.2312943⟩
Journal articles hal-01947613v1

Impact of channel width on back biasing effect in tri-gate MOSFET

So Jeong Park , Dae-Young Jeon , Laurent Montes , Sylvain Barraud , Gyu-Tae Kim
Microelectronic Engineering, 2014, 114, pp.91-97. ⟨10.1016/j.mee.2013.09.016⟩
Journal articles hal-01947596v1

(Invited) In Depth Study of Ge Impact on Advanced SiGe PMOS Transistors

A. Soussou , M. Cassé , G. Reimbold , C. Leroux , F. Andrieu
ECS Transactions, 2014, 64 (8), pp.61-68. ⟨10.1149/06408.0061ecst⟩
Journal articles hal-01947593v1

Impact of low-frequency noise variability on statistical parameter extraction in ultra-scaled CMOS devices

E. Ioannidis , G. Theodorou , S. Haendler , C.A. Dimitriadis , G. Ghibaudo
Electronics Letters, 2014, 50 (19), pp.1393-1395. ⟨10.1049/el.2014.1837⟩
Journal articles hal-01947621v1

Metal evaporation dependent charge injection in organic transistors

Yong Xu , Chuan Liu , Huabin Sun , Francis Balestra , Gérard Ghibaudo
Organic Electronics, 2014, 15 (8), pp.1738-1744. ⟨10.1016/j.orgel.2014.05.006⟩
Journal articles hal-01947617v1

Compact Modeling of Nanoscale Trapezoidal FinFETs

Nikolaos Fasarakis , Theano Karatsori , Andreas Tsormpatzoglou , Dimitrios Tassis , Konstantinos Papathanasiou
IEEE Transactions on Electron Devices, 2014, 61 (2), pp.324-332. ⟨10.1109/TED.2013.2284503⟩
Journal articles hal-01947598v1

MASTAR VA: A predictive and flexible compact model for digital performances evaluation of CMOS technology with conventional CAD tools

Joris Lacord , Gérard Ghibaudo , Frédéric Boeuf
Solid-State Electronics, 2014, 91, pp.137-146. ⟨10.1016/j.sse.2013.10.007⟩
Journal articles hal-01947590v1

Significant roles of low-temperature post-metallization annealing in solution-processed oxide thin-film transistors

Yong Xu , Chuan Liu , Paul Seyram K. Amegadze , Won-Tae Park , Dang Xuan Xu
Applied Physics Letters, 2014, 105 (13), pp.133505. ⟨10.1063/1.4897003⟩
Journal articles hal-01947622v1

Evaluating injection and transport properties of organic field-effect transistors by the convergence point in transfer-length method

Chuan Liu , Yong Xu , Gérard Ghibaudo , Xubing Xu , Takeo Minari
Applied Physics Letters, 2014, 104 (1), pp.013301. ⟨10.1063/1.4860958⟩
Journal articles hal-01947594v1

Separation of surface accumulation and bulk neutral channel in junctionless transistors

Dae-Young Jeon , So Jeon , Mireille Mouis , Min-Kyu Joo , Sylvain Barraud
Applied Physics Letters, 2014, 104 (26), pp.263510. ⟨10.1063/1.4886139⟩
Journal articles hal-01947616v1

Flat-band voltage and low-field mobility analysis of junctionless transistors under low-temperature

Min-Kyu Joo , Mireille Mouis , Dae-Young Jeon , Sylvain Barraud , So Jeong Jeon
Semiconductor Science and Technology, 2014, 29 (4), pp.045024. ⟨10.1088/0268-1242/29/4/045024⟩
Journal articles hal-01947608v1
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Physics of the frequency response of rectifying organic Schottky diodes

Stephane Altazin , Raphael Clerc , Romain Gwoziecki , Jean-Marie Verilhac , Damien Boudinet
Journal of Applied Physics, 2014, 115, pp.064509. ⟨10.1063/1.4865739⟩
Journal articles hal-00947497v1
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Impact of dopant species on the interfacial trap density and mobility in amorphous In-X-Zn-O solution-processed thin-film transistors

Mohammed Benwadih , Jan Chroboczek , Gérard Ghibaudo , Romain Coppard , Dominique Vuillaume
Journal of Applied Physics, 2014, 115 (21), pp.214501. ⟨10.1063/1.4880163⟩
Journal articles hal-01947615v1

Impact of trap localization on low-frequency noise in nanoscale device

Jae Woo Lee , Wan Soo Yun , Gérard Ghibaudo
Journal of Applied Physics, 2014, 115 (19), pp.194501. ⟨10.1063/1.4878456⟩
Journal articles hal-01947614v1

Characterization Methodology for MOSFET Local Systematic Variability in Presence of Statistical Variability

Omar Jonani Franco Piliado , Giancarlo Castaneda , Andre Juge , Gérard Ghibaudo
Journal of Low Power Electronics, 2014, 10 (1), pp.127-136. ⟨10.1166/jolpe.2014.1304⟩
Journal articles hal-02050867v1

Compact modeling of the shift between classical and quantum threshold voltages in a III–V nanowire

G. Hiblot , Q. Rafhay , F. Boeuf , G. Ghibaudo
Solid-State Electronics, 2014, 100, pp.71-78. ⟨10.1016/j.sse.2014.07.001⟩
Journal articles hal-01947623v1

Study of an embedded buried SiGe structure as a mobility booster for fully-depleted SOI MOSFETs at the 10nm node

S. Morvan , F. Andrieu , J.-C. Barbé , G. Ghibaudo
Solid-State Electronics, 2014, 98, pp.50-54. ⟨10.1016/j.sse.2014.04.013⟩
Journal articles hal-01947618v1

Analytical Modeling of Threshold Voltage and Interface Ideality Factor of Nanoscale Ultrathin Body and Buried Oxide SOI MOSFETs With Back Gate Control

Nikolaos Fasarakis , Theano Karatsori , Dimitrios Tassis , Christoforos Theodorou , François Andrieu
IEEE Transactions on Electron Devices, 2014, 61 (4), pp.969-975. ⟨10.1109/TED.2014.2306015⟩
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Erratum: “Evaluating injection and transport properties of organic field-effect transistors by the convergence point in transfer-length method” [Appl. Phys. Lett. 104 , 013301 (2014)]

Chuan Liu , Yong Xu , Gérard Ghibaudo , Xubing Xu , Takeo Minari
Applied Physics Letters, 2014, 104 (7), pp.079902. ⟨10.1063/1.4866287⟩
Journal articles hal-01947602v1

Low-Frequency Noise Sources in Advanced UTBB FD-SOI MOSFETs

Christoforos Theodorou , Eleftherios Ioannidis , François Andrieu , Thierry Poiroux , Olivier Faynot
IEEE Transactions on Electron Devices, 2014, 61 (4), pp.1161-1167. ⟨10.1109/TED.2014.2307201⟩
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Analytical relationship between subthreshold swing of thermionic and tunnelling currents

G. Hiblot , Quentin Rafhay , F. Boeuf , G. Ghibaudo
Electronics Letters, 2014, 50 (23), pp.1745-1747. ⟨10.1049/el.2014.3206⟩
Journal articles hal-01959261v1

Effect of Intertube Junctions on the Thermoelectric Power of Monodispersed Single Walled Carbon Nanotube Networks

Mingxing Piao , Min-Kyu Joo , Junhong Na , Yun-Jeong Kim , Mireille Mouis
Journal of Physical Chemistry C, 2014, 118 (46), pp.26454-26461. ⟨10.1021/jp505682f⟩
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Low-temperature operation of junctionless nanowire transistors: Less surface roughness scattering effects and dominant scattering mechanisms

Dae-Young Jeon , So Jeong Jeon , Mireille Mouis , Sylvain Barraud , Gyu-Tae Kim
Applied Physics Letters, 2014, 105 (26), pp.263505. ⟨10.1063/1.4905366⟩
Journal articles hal-01947628v1

Source/drain induced defects in advanced MOSFETs: what device electrical characterization tells

Mireille Mouis , Jae Woo Lee , Daeyoung Jeon , Ming Shi , Minju Shin
physica status solidi (c), 2014, 11 (1), pp.138-145. ⟨10.1002/pssc.201300317⟩
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Evolution of low frequency noise and noise variability through CMOS bulk technology nodes from 0.5μm down to 20nm

E.G. Ioannidis , S. Haendler , C.G. Theodorou , S. Lasserre , C.A. Dimitriadis
Solid-State Electronics, 2014, 95, pp.28-31. ⟨10.1016/j.sse.2014.03.002⟩
Journal articles hal-01947609v1

Less mobility degradation induced by transverse electric-field in junctionless transistors

So Jeong Park , Dae-Young Jeon , Laurent Montes , Mireille Mouis , Sylvain Barraud
Applied Physics Letters, 2014, 105 (21), pp.213504. ⟨10.1063/1.4902549⟩
Journal articles hal-01947627v1

Full split C–V method for parameter extraction in ultra thin BOX FDSOI MOS devices

Minju Shin , Ming Shi , Mireille Mouis , Antoine Cros , Emmanuel Josse
Solid-State Electronics, 2014, 99, pp.104-107. ⟨10.1016/j.sse.2014.04.039⟩
Journal articles hal-01947620v1

Understanding Thickness-Dependent Charge Transport in Pentacene Transistors by Low-Frequency Noise

Y. Xu , C. Liu , W. Scheideler , S.L. Li , W.W. Li
IEEE Electron Device Letters, 2013, 34 (10), pp.1298-1300. ⟨10.1109/LED.2013.2277613⟩
Journal articles hal-00994392v1

Low-frequency noise behavior of junctionless transistors compared to inversion-mode transistors

D.-Y. Jeon , S. J. Park , M. Mouis , S. Barraud , G.-T. Kim
Solid-State Electronics, 2013, 81, pp.101-104. ⟨10.1016/j.sse.2012.12.003⟩
Journal articles hal-01002104v1

Impact of quantum effects on the short channel effects of III-V nMOSFETs in weak and strong inversion regimes

T. Dutta , Q. Rafhay , R. Clerc , J. Lacord , S. Monfray
Solid-State Electronics, 2013, 88, pp.43-48. ⟨10.1016/j.sse.2013.04.007⟩
Journal articles hal-01002086v1

Investigating doping effects on high-kappa metal gate stack for effective work function engineering

Cédric Leroux , S. Baudot , M. Charbonnier , A. van Der Geest , P. Caubet
Solid-State Electronics, 2013, 88, pp.21-26. ⟨10.1016/j.sse.2013.04.011⟩
Journal articles hal-01002092v1

Origin of the low-frequency noise in n-channel FinFETs

C. G. Theodorou , T. Hoffman , T. Chiarella , G. Ghibaudo , C.A. Dimitriadis
Solid-State Electronics, 2013, 82, pp.21-24. ⟨10.1016/j.sse.2013.01.009⟩
Journal articles hal-01002150v1

New parameter extraction method based on split C-V measurements in FDSOI MOSFETs

I. Ben Akkez , A. Cros , C. Fenouillet-Beranger , F. Boeuf , Q. Rafhay
Solid-State Electronics, 2013, 84, pp.142-146. ⟨10.1016/j.sse.2013.02.011⟩
Journal articles hal-01002112v1

"Y function" method applied to saturation regime: Apparent saturation mobility and saturation velocity extraction

C. Diouf , A. Cros , S. Monfray , J. Mitard , J. Rosa
Solid-State Electronics, 2013, 85, pp.12-14. ⟨10.1016/j.sse.2013.03.007⟩
Journal articles hal-01001922v1

Effects of channel width variation on electrical characteristics of tri-gate Junctionless Transistors

D.-Y. Jeon , S. J. Park , M. Mouis , S. Barraud , G.-T. Kim
Solid-State Electronics, 2013, 81, pp.58-62. ⟨10.1016/j.sse.2013.01.002⟩
Journal articles hal-01001968v1

RC Model for Frequency Dependence of Split C-V Measurements on Bare SOI Wafers

A. Diab , I. Ionica , G. Ghibaudo , S. Cristoloveanu
IEEE Electron Device Letters, 2013, 34 (6), pp.792-794. ⟨10.1109/LED.2013.2257663⟩
Journal articles hal-00994383v1

Gate-last integration on planar FDSOI for low-VTp and low-EOT MOSFETs

S. Morvan , F. Andrieu , Cédric Leroux , X. Garros , M. Casse
Microelectronic Engineering, 2013, 109, pp.306-309. ⟨10.1016/j.mee.2013.03.045⟩
Journal articles hal-00996453v1

Channel access resistance effects on charge carrier mobility and low-frequency noise in a polymethyl methacrylate passivated SnO2 nanowire field-effect transistors

M.K. Joo , J. Huh , M. Mouis , S.J. Park , D.Y. Jeon
Applied Physics Letters, 2013, 102 (Issue 5), pp.053114. ⟨10.1063/1.4788708⟩
Journal articles hal-01017436v1
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ANALYTICAL MODELS AND ELECTRICAL CHARACTERISATION OF ADVANCED MOSFETS IN THE QUASI BALLISTIC REGIME

Raphael Clerc , Gérard Ghibaudo
International Journal of High Speed Electronics and Systems, 2013, 22 (1), pp.1350002. ⟨10.1142/S012915641350002X⟩
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Mobility coupling effects due to remote Coulomb scattering in thin-film FD-SOI CMOS devices

K. Bennamane , I. Ben Akkez , A. Cros , C. Fenouillet-Beranger , F. Balestra
Electronics Letters, 2013, 49 (7), pp.490-491. ⟨10.1049/el.2012.4150⟩
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Grain boundary composition and conduction in HfO2: An ab initio study

K.H. Xue , P. Blaise , L.R.C. Fonseca , G. Molas , E. Vianello
Applied Physics Letters, 2013, 102 (20), pp.201908. ⟨10.1063/1.4807666⟩
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Current Conduction Model for Oxide-Based Resistive Random Access Memory Verified by Low Frequency Noise Analysis

Z. Fang , H.Y. Yu , W. J. Fan , G. Ghibaudo , J. Buckley
IEEE Transactions on Electron Devices, 2013, 60 (Issue3), pp.1272-1275. ⟨10.1109/TED.2013.2240457⟩
Journal articles hal-01017480v1

Study of carrier transport in strained and unstrained SOI tri-gate and omega-gate silicon nanowire MOSFETs

M. Koyama , M. Casse , R. Coquand , S. Barraud , C. Vizioz
Solid-State Electronics, 2013, 84, pp.46-52. ⟨10.1016/j.sse.2013.02.024⟩
Journal articles hal-01002176v1

A new characterization technique for SOI wafers: Split C(V) in pseudo-MOSFET configuration

A. Diab , C. Fernandez , A. Ohata , N. Rodriguez , I. Ionica
Solid-State Electronics, 2013, 90, pp.127-133. ⟨10.1016/j.sse.2013.02.041⟩
Journal articles hal-01001928v1

Unexpected impact of germanium content in SiGe bulk PMOSFETs

C. Diouf , A. Cros , A. Soussou , D. Rideau , S. Haendler
Solid-State Electronics, 2013, 86, pp.45-50. ⟨10.1016/j.sse.2013.04.024⟩
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Impact of Ge proportion on advanced SiGe bulk P-MOSFET matching performances

L. Rahhal , A. Bajolet , C. Diouf , F. Kergomard , J. Rosa
Solid-State Electronics, 2013, 85, pp.15-22. ⟨10.1016/j.sse.2013.03.001⟩
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Sidewall mobility and series resistance in a multichannel tri-gate MOSFET

S.J. Park , D.Y. Jeon , L. Montes , S. Barraud , G.T. Kim
Semiconductor Science and Technology, 2013, 28 (6), pp.065009. ⟨10.1088/0268-1242/28/6/065009⟩
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Impact Of Single Charge Trapping On The Variability of Ultra-Scaled Planar And Tri-Gate FDSOI MOSFETs: Experiment vs Simulation

A. Subirats , X. Garros , J. El Husseini , C. Le Royer , G. Reimbold
IEEE Transactions on Electron Devices, 2013, 60, pp.2604-2610
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Revisited parameter extraction methodology for electrical characterization of junctionless transistors

D.-Y. Jeon , S. J. Park , M. Mouis , M. Berthome , S. Barraud
Solid-State Electronics, 2013, 90, pp.86-93. ⟨10.1016/j.sse.2013.02.047⟩
Journal articles hal-01002163v1

Characterization and modeling of low frequency noise in CMOS inverters

E.G. Ioannidis , S. Haendler , C.A. Dimitriadis , G. Ghibaudo
Solid-State Electronics, 2013, 81, pp.151-156. ⟨10.1016/j.sse.2012.12.001⟩
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Strain-Enhanced Performance of Si-Nanowire FETs

S. Barraud , R. Coquand , M. Koyamad , D. Cooper , C. Vizioz
ECS Transactions, 2013, 53, pp.125-136
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Impact of dynamic variability on the operation of CMOS inverter

E.G. Ioannidis , S. Haendler , J.P. Manceau , C.A. Dimitriadis , G. Ghibaudo
Electronics Letters, 2013, 49 (19), pp.214. ⟨10.1049/el.2013.1343⟩
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A new method for the extraction of flat-band voltage and doping concentration in Tri-gate Junctionless Transistors

D.-Y. Jeon , S. J. Park , M. Mouis , S. Barraud , G.-T. Kim
Solid-State Electronics, 2013, 81, pp.113-118. ⟨10.1016/j.sse.2012.11.011⟩
Journal articles hal-01001935v1

Static electrical characterization and low frequency noise of a-InHfZnO thin film transistors

S.J. Park , D.-Y. Jeon , S.-E. Ahn , S. Jeon , L. Montes
Thin Solid Films, 2013, 548, pp.560-565. ⟨10.1016/j.tsf.2013.09.024⟩
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Understanding Ge impact on VT and VFB in Si1-xGex/Si pMOSFETs

A. Soussou , Cédric Leroux , D. Rideau , A. Toffoli , G. Romano
Microelectronic Engineering, 2013, 109, pp.282-285. ⟨10.1016/j.mee.2013.03.008⟩
Journal articles hal-00996510v1

Joule's law for organic transistors exploration: Case of contact resistance

Yong Xu , Chuan Liu , Yun Li , T. Minari , P. Darmawan
Journ. Appl. Phys., 2013, 113 (Issue 6), pp.no. 064507. ⟨10.1063/1.4792066⟩
Journal articles hal-00994576v1

"Materials, Devices and Systems Science, Engineering and Architectures" (Proceedings of ISCDG'2012)

G. Ghibaudo , F. Balestra , S. Deleonibus
Guest Editors, 2013, 63 (1)
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Static and low frequency noise characterization of N-type random network of carbon nanotubes thin film transistors

M.K. Joo , M. Mouis , D.Y. Jeon , G.T. Kim , U.J. Kim
Journ. Appl. Phys., 2013, 114 (15), pp.154503:1-10. ⟨10.1063/1.4825221⟩
Journal articles hal-01017541v1

How small the contacts could be optimal for nanoscale organic transistors?

Y. Xu , C. Liu , W. Scheideler , P. Darmawan , S.L. Li
Organic Electronics, 2013, 14 (7), pp.1797-1804. ⟨10.1016/j.orgel.2013.04.014⟩
Journal articles hal-00996572v1

Sheet resistance measurement on AlGaN/GaN wafers and dispersion study

J. Lehmann , Cédric Leroux , M. Charles , A. Torres , E. Morvan
Microelectronic Engineering, 2013, 109, pp.334-337. ⟨10.1016/j.mee.2013.03.161⟩
Journal articles hal-00996470v1

Study of substrate orientations impact on Ultra Thin Buried Oxide (UTBOX) FDSOI High-K Metal gate technology performances

I. Ben Akkez , C. Fenouillet-Beranger , A. Cros , P. Perreau , S. Haendler
Solid-State Electronics, 2013, 90, pp.134-142. ⟨10.1016/j.sse.2013.02.039⟩
Journal articles hal-01002180v1

New method for the extraction of bulk channel mobility and flat-band voltage in junctionless transistors

D.Y. Jeon , S.J. Park , M. Mouis , S. Barraud , G.T. Kim
Solid-State Electronics, 2013, 89, pp.139-141. ⟨10.1016/j.sse.2013.08.003⟩
Journal articles hal-01002110v1

Low-temperature electrical characterization of junctionless transistors

Dae-Young Jeon , So Jeong Jeon , Mireille Mouis , Sylvain Barraud , Gyu-Tae Kim
Solid-State Electronics, 2013, 80, pp.135-141
Journal articles hal-02016366v1

Strain-Induced Performance Enhancement of Trigate and Omega-Gate Nanowire FETs Scaled Down to 10-nm Width

R. Coquand , M. Cassé , D. Cooper , V. Maffini-Alvaro , M.-P. Samson
IEEE Transactions on Electron Devices, 2013, 60, pp.727-732. ⟨10.1109/TED.2012.2231684⟩
Journal articles hal-01017518v1

Scaling of high-kappa/metal-gate TriGate SOI nanowire transistors down to 10 nm width

R. Coquand , S. Barraud , M. Casse , P. Leroux , C. Vizioz
Solid-State Electronics, 2013, 88, pp.32-36. ⟨10.1016/j.sse.2013.04.006⟩
Journal articles hal-01002171v1

Back biasing effects in tri-gate junctionless transistors

S.J. Park , D.Y. Jeon , L. Montes , S. Barraud , G.T. Kim
Solid-State Electronics, 2013, 87, pp.74-79. ⟨10.1016/j.sse.2013.06.004⟩
Journal articles hal-01001960v1

Flicker noise in n-channel nanoscale tri-gate fin-shaped field-effect transistors

C. Theodorou , N. Fasarakis , T. Hoffman , T. Chiarella , G. Ghibaudo
Applied Physics Letters, 2012, 101 (24), pp.243512. ⟨10.1063/1.4772590⟩
Journal articles hal-02002339v1

Revisited approach for the characterization of Gate Induced Drain Leakage

Quentin Rafhay , Cuiqin Xu , Perrine Batude , Mireille Mouis , Maud Vinet
Solid-State Electronics, 2012, 71, pp.37-41. ⟨10.1109/ULIS.2011.5757994⟩
Journal articles hal-01959351v1

Performance and Modeling of Si-Nanocrystal Double-Layer Memory Devices With High-k Control Dielectrics

Guillaume Gay , Gabriel Molas , Marc Bocquet , Eric Jalaguier , Marc Gély
IEEE Transactions on Electron Devices, 2012, 59 (4), pp.933 - 940. ⟨10.1109/TED.2012.2182769⟩
Journal articles hal-01804667v1

Symmetrical unified compact model of short-channel double-gate MOSFETs

K. Papathanasiou , C.G. Theodorou , A. Tsormpatzoglou , D.H. Tassis , A. Dimitriadis
Solid-State Electronics, 2012, 69, pp.55-61. ⟨10.1016/j.sse.2011.10.002⟩
Journal articles hal-02001897v1

Short channel mobility analysis of SiGe nanowire p-type field effect transistors: Origins of the strain induced performance improvement

Jae Woo Lee , Doyoung Jang , Mireille Mouis , Kiichi Tachi , Gyu Tae Kim
Applied Physics Letters, 2012, 101 (14), pp.143502. ⟨10.1063/1.4756910⟩
Journal articles hal-02334067v1

Investigation of charge-trap memories with AlN based band engineered storage layers

Gabriel Molas , J.P. Colonna , R. Kies , D. Belhachemi , Marc Bocquet
Solid-State Electronics, 2011, 58 (1), pp.68 - 74. ⟨10.1016/j.sse.2010.11.030⟩
Journal articles hal-01804675v1

Diagnosis of low-frequency noise sources in contact resistance of staggered organic transistors

Y. Xu , T. Minari , T. Kazuito , R. Gwoziecki , F. Balestra
Applied Physics Letters, 2011, 98, pp.033505
Journal articles hal-00596188v1

Mobility analysis of surface roughness scattering in FinFET devices

Jae Woo Lee , Doyoung Jang , Mireille Mouis , Gyu Tae Kim , Thomas Chiarella
Solid-State Electronics, 2011, 62 (1), pp.195-201. ⟨10.1016/j.sse.2011.04.020⟩
Journal articles hal-02334151v1

Origin of Low-Frequency Noise in the Low Drain Current Range of Bottom-Gate Amorphous IGZO Thin-Film Transistors

Christoforos Theodorou , Andreas Tsormpatzoglou , Charalabos Dimitriadis , Shahrukh Khan , Jalal Jomaah
IEEE Electron Device Letters, 2011, 32 (7), pp.898-900. ⟨10.1109/LED.2011.2143386⟩
Journal articles hal-02001856v1

A Comparative Study of Surface-Roughness-Induced Variability in Silicon Nanowire and Double-Gate FETs

Alessandro Cresti , Marco Pala , Stefano Poli , Mireille Mouis , Gérard Ghibaudo
IEEE Transactions on Electron Devices, 2011, 58 (8), pp.2274-2281. ⟨10.1109/TED.2011.2147318⟩
Journal articles hal-02419609v1

Analytical low-frequency noise model in the linear region of lightly doped nanoscale double-gate metal-oxide-semiconductor field-effect transistors

E.G. Ioannidis , G. Theodorou C. , A. Tsormpatzoglou , D.H. Tassis , K. Papathanasiou
Journ. Appl. Phys., 2010, 108, pp.064512. ⟨10.1063/1.3483279S⟩
Journal articles hal-00596310v1

Mobility enhancement by CESL strain in short-channel ultrathin SOI MOSFETs

L. Pham-Nguyen , C. Fenouillet-Beranger , G. Ghibaudo , T. Skotnicki , S. Cristoloveanu
Solid-State Electronics, 2010, 54 (2), pp.123-130
Journal articles hal-00596348v1

Origin of low-frequency noise in pentacene field-effect transistors

Y. Xu , T. Minari , K. Tsukagoshi , J. Chroboczek , F. Balestra
Solid-State Electronics, 2010, pp.In Press, Corrected Proof, Available online 4 February 2011
Journal articles hal-00596355v1

Modeling the Independent Double Gate Transistor in Accumulation Regime for 1TDRAM Application

V. Puget , G. Bossu , P. Masson , P. Mazoyer , R. Ranica
IEEE Transactions on Electron Devices, 2010, 57 (4), pp.855-865
Journal articles hal-00596201v1

Source/drain optimization of underlapped lightly doped nanoscale double gate MOSFETs

D.H. Tassis , A. Tsormpatzoglou , C.A. Dimitriadis , G. Ghibaudo , G. Pananakakis
Microelectronic Engineering, 2010, 87, pp.23534-2357
Journal articles hal-00596325v1

Analysis of charge sensitivity and low frequency noise limitation in silicon nanowire sensors

J.W. Lee , D. Jang , T. Kim , M. Mouis , G. Ghibaudo
Journ. Appl. Phys, 2010, 107, pp.044501
Journal articles hal-00596315v1

Charge Localization during Program and Retention in Nitrided Read Only Memory-Like Nonvolatile Memory Devices

Emmanuel Nowak , E. Vianello , L. Perniola , Marc Bocquet , G. Molas
Japanese Journal of Applied Physics, 2010, 49, pp.04DD12
Journal articles hal-00596309v1

Measurement of Dipoles/Roll-Off /Work functions by coupling CV and IPE and study of their dependence on fabrication process

M. Charbonnier , Cédric Leroux , V. Cosnier , P. Besson , E. Martinez
IEEE Transactions on Electron Devices, 2010, 57, pp.1819-1819
Journal articles hal-00596197v1

Non-metallic effects in silicided gate MOSFETs

N. Rodrriguez , F. Gamiz , R. Clerc , C. Sampedro , A. Godoy
Solid-State Electronics, 2010, 53 (12), pp.1313-1317
Journal articles hal-00596351v1

Low-frequency noise in strained SiGe core-shell nanowire p-channel field effect transistors

J. Doyoung , J.W. Lee , Tachi Kiichi , L. Montes , T. Ernst
Applied Physics Letters, 2010, 97, pp.073505
Journal articles hal-00596183v1

Unified soft breakdown MOSFETs compact model: From experiments to circuit simulation

L. Gerrer , M. Rafik , G. Ribes , G. Ghibaudo , E. Vincent
Microelectronics Reliability, 2010, 50, pp.1259-1262
Journal articles hal-00596327v1

Direct evaluation of low-field mobility and access resistance in pentacene field-effect transistors

X. Yong , M. Takeo , T. Kazuhito , A. Chroboczek , G. Ghibaudo
Journ. Appl. Phys., 2010, 107, pp.114507
Journal articles hal-00596318v1

HfO2-based Gate Stacks Transport Mechanisms and Parameter Extraction

J. Coignus , Cédric Leroux , R. Clerc , R. Truche , G. Ghibaudo
Solid-State Electronics, 2010, 54 (9), pp.972-978
Journal articles hal-00596344v1

Gate-all-around technology: Taking advantage of ballistic transport?

Huguenin J.L. , G. Bidal , S. Denorme , D. Fleury , N. Loubet
Solid-State Electronics, 2010, 54 (9), pp.883-889
Journal articles hal-00596345v1

Extraction of low-frequency noise in contact resistance of organic field-effect transistors

Y. Xu , T. Minari , K. Tsukagoshi , R. Gwoziecki , R. Coppard
Applied Physics Letters, 2010, 97, pp.033503
Journal articles hal-00596185v1

Analytical modeling for the current-voltage characteristics of lightly-doped symmetric double-gate MOSFETs

A. Tsormpatzoglou , D.H. Tassis , C.A. Dimitriadis , G. Ghibaudo , G. Pananakakis
Microelectronic Engineering, 2010, 87, pp.1764-1768
Journal articles hal-00596324v1

Modified transmission-line method for contact resistance extraction in organic field-effect transistors

Y. Xu , R. Gwoziecki , Isabelle Chartier , R. Coppard , F. Balestra
Applied Physics Letters, 2010, 97, pp.063302
Journal articles hal-00596184v1

Modeling Local Electrical Fluctuations in 45nm Heavily Pocket-implanted Bulk MOSFET

C. Mezzomo , A. Bajolet , A. Cathignol , E. Joss , G. Ghibaudo
Journal of Solid State Electrochemistry, 2010, 54, pp.1359-1366
Journal articles hal-00596341v1

Compact drain current model of short-channel cylindrical gate-all-around MOSFETs

A. Tsormpatzoglou , C.A. Dimitriadis , G. Ghibaudo , G. Pananakakis
Semiconductor Science and Technology, 2009, 24, pp.075017
Journal articles hal-00596143v1

Method for 3D electrical parameters dissociation and extraction in multichannel MOSFET (MCFET)

C. Dupré , T. Ernst , E. Bernard , B. Guillaumot , N. Vulliet
Solid-State Electronics, 2009, 53, pp.746-752
Journal articles hal-00596162v1

Electrical characterization and design optimization of FinFETs with a TiN/HfO2 gate stack

A. Tsormpatzoglou , D.H. Tassis , C.A. Dimitriadis , M. Mouis , G. Ghibaudo
Semiconductor Science and Technology, 2009, 24 (12), pp.125001:6
Journal articles hal-00596144v1

Experimental characterization of the subthreshold leakage current in triple-gate FinFETs

A. Tsormpatzoglou , C.A. Dimitriadis , M. Mouis , G. Ghibaudo , N. Collaert
Solid-State Electronics, 2009, 53 (3), pp.359-363
Journal articles hal-00596155v1

Backscattering coefficient and drift-diffusion mobility extraction in short channel MOS devices

I. Pappas , G. Ghibaudo , C.A. Dimitriadis , C. Fenouillet-Beranger
Solid-State Electronics, 2009, 53 (1), pp.54-56
Journal articles hal-00596166v1
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Impact of a HTO/Al$_2$O$_3$ bi-layer blocking oxide in nitride-trap non-volatile memories

Marc Bocquet , G. Molas , L. Perniola , X. Garros , J. Buckley
Solid-State Electronics, 2009, 53, pp.786 - 791. ⟨10.1016/j.sse.2009.03.018⟩
Journal articles hal-01737746v1

In Situ Comparison of Si/High- K and Si/SiO2 Channel Properties in SOI MOSFETs

L. Pham-Nguyen , C. Fenouillet-Beranger , A. Vandooren , T. Skotnicki , G. Ghibaudo
IEEE Electron Device Letters, 2009, 30 (10), pp.1075-1077. ⟨10.1109/LED.2009.2027141⟩
Journal articles hal-00596074v1

Abnormally high local electrical fluctuations in heavily pocket-implanted bulk long MOSFET

S. Bordez , A. Cros , K. Rochereau , G. Ghibaudo
Solid-State Electronics, 2009, 53 (2), pp.127-133
Journal articles hal-00596158v1

Piezoresistance Effect of Strained and Unstrained Fully-Depleted Silicon-On-Insulator MOSFETs Integrating an HfO2/TiN Gate Stack

F. Rochette , M. Cassé , M. Mouis , A. Haziot , T. Pioger
Solid-State Electronics, 2009, 53 (3), pp.392-396
Journal articles hal-00596170v1

Folded fully depleted FET using Silicon-On-Nothing technology as a highly W-scaled planar solution

G. Bidal , N. Loubet , C. Fenouillet-Beranger , S. Denorme , P. Perreau
Solid-State Electronics, 2009, 53, pp.735-740
Journal articles hal-00596173v1

Low-Temperature Electrical Characterization of Fully Depleted eXtra-strained SOI n-MOSFETs with TiN/HfO2 Gate Stack for the 32-nm Technology Node

Sylvain Feruglio , François Andrieu , Faynot Olivier , Gérard Ghibaudo
Cryogenics, 2009, 49 (11), pp.605-610. ⟨10.1016/j.cryogenics.2008.12.004⟩
Journal articles hal-01198843v1

Investigation of Hybrid Molecular/Silicon Memories With Redox-Active Molecules Acting as Storage Media

T. Pro , J. Buckley , K. Huang , A. Calborean , M. Gely
IEEE Transactions on Nanotechnology, 2009, 8, pp.204-213
Journal articles hal-00596094v1

Tuning the dipole at the High-/SiO2 interface in advanced metal gate stacks.

M. Charbonnier , Cédric Leroux , V. Cosnier , P. Besson , F. Martin
Microelectronic Engineering, 2009, 86, pp.1740-1742
Journal articles hal-00596131v1

A New Technique to Extract the Source/Drain Series Resistance of MOSFETs

Dominique Fleury , Antoine Cros ,