Gerard Ghibaudo

Gérard Ghibaudo, Fellow IEEE 2013-2022, was born in France in 1954. He graduated from Grenoble Institute of Technology in 1979 and obtained the PhD degree in Electronics in 1981, the State Thesis degree in Physics in 1984 and the PhD supervision habilitation diploma in 1986 from Grenoble University. He was CNRS PhD student from 1979 to 1981 and became associate researcher at CNRS in 1981 in LPCS laboratory (Grenoble). He was finally promoted Director of Research at CNRS in 1992 (exceptional class in 2014). He was Director of IMEP-LAHC Laboratory located at MINATEC-INPG center from 2007 to 2013. During the academic year 1987-1988, he spent a sabbatical year at Naval Research Laboratory in Washington, DC (USA) where he worked on the characterization of MOSFETs. His main research activities were in the field of electronics transport, oxidation of silicon, MOS device physics, fluctuations and low frequency noise and dielectric reliability. He participated to over 20 European projects and was responsible for over 50 research contracts. Dr. G. Ghibaudo has supervised over 125 PhD students in his career. He was co-founder of the First European Workshop on Low Temperature Electronics (WOLTE 94) and organizer of 20 Workshops/Summer School during the last 40 years. Dr. G. Ghibaudo was member of the Editorial board of Solid State Electronics and served as associate editor of Microelectronics reliability journal and Journal of Active and Passive Electronic Component. During his career he authored over 596 articles in International Refereed Journals and 762 communications in International Conferences. He participated to 86 invited papers in International Conferences and he wrote 34 book chapters. Dr. G. Ghibaudo featured over 952 items and 13.945 citations in Web of Science where he had an H index of 48. G. Ghibaudo is ranking 14% world top researcher among Elsevier Standford 100,000 top-scientists.
736
Documents

Publications

Publications

p-type NiOx ultrathin film as highly efficient hole extraction layer in n-type PbS quantum dots based NIR photodiode

Louis David Mohgouk Zouknak , Mickael Gros-Jean , Serge Blonkowski , Charles Leroux , Gérard Ghibaudo

Solid-State Electronics, 2024, 212, pp.108836. ⟨10.1016/j.sse.2023.108836⟩

Article dans une revue cea-04776269v1
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Numerical simulation and analytical modelling of self-heating in FDSOI MOSFETs down to very deep cryogenic temperatures

Gérard Ghibaudo , M. Cassé , Francis Balestra

World journal of physics, 2023, 01 (02), pp.87-109. ⟨10.56439/WJP/2023.1110⟩

Article dans une revue hal-04273066v1

On the Fluctuation–Dissipation of the Oxide Trapped Charge in a MOSFET Operated Down to Deep Cryogenic Temperatures

Gérard Ghibaudo

Fluctuation and Noise Letters, 2023, ⟨10.1142/S0219477523500451⟩

Article dans une revue hal-04264285v1

On the Zero Temperature Coefficient in FD-SOI MOSFETs

Edoardo Catapano , Tadeu Mota Frutuoso , Mikael Casse , Gérard Ghibaudo

IEEE Transactions on Electron Devices, 2023, 70 (3), pp.845

Article dans une revue cea-04083773v1
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Numerical simulation of electro-thermal properties in FDSOI MOSFETs down to deep cryogenic temperatures

Gérard Ghibaudo , Francis Balestra

Journal of Electronics and Electrical Engineering, 2023, 2 (1), pp.2498. ⟨10.37256/jeee.2120232498⟩

Article dans une revue hal-04246042v1
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On-wafer drain current aariability in GaN MIS-HEMT on 200-mm silicon substrates

Romeo Kom Kammeugne , Charles Leroux , Christoforos Theodorou , Laura Vauche , Matthew Charles et al.

Journal of Electronics and Electrical Engineering, 2023, 2 (1), pp.12-23. ⟨10.37256/jeee.2120232132⟩

Article dans une revue hal-04305208v1

Cryogenic MOSFET Subthreshold Current: From Resistive Networks to Percolation Transport in 1-D Systems

E. Catapano , M. Cassé , G. Ghibaudo

IEEE Transactions on Electron Devices, 2023, pp.1-6. ⟨10.1109/TED.2023.3283941⟩

Article dans une revue hal-04134155v1

New insights into low frequency noise (LFN) sources analysis in GaN/Si MIS-HEMTs

R. Kom Kammeugne , Christoforos Theodorou , C. Leroux , L. Vauche , Xavier Mescot et al.

Solid-State Electronics, 2023, 200, pp.108555. ⟨10.1016/j.sse.2022.108555⟩

Article dans une revue hal-03897338v1
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TCAD simulations of FDSOI devices down to deep cryogenic temperature

E. Catapano , M. Cassé , F. Gaillard , S. de Franceschi , Tristan Meunier et al.

Solid-State Electronics, 2022, 194, pp.108319. ⟨10.1016/j.sse.2022.108319⟩

Article dans une revue hal-03974981v1
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Modelling of self-heating effect in FDSOI and bulk MOSFETs operated in deep cryogenic conditions

Gérard Ghibaudo , M. Cassé , F. Serra Di Santa Maria , Christoforos Theodorou , Francis Balestra

Solid-State Electronics, 2022, 192, pp.108265. ⟨10.1016/j.sse.2022.108265⟩

Article dans une revue hal-03852787v1

Modeling of 1D confinement in FD-SOI trigate nanowires at deep cryogenic temperatures

E. Catapano , M. Cassé , F. Gaillard , Tristan Meunier , M. Vinet et al.

Solid-State Electronics, 2022, 198, pp.108466. ⟨10.1016/j.sse.2022.108466⟩

Article dans une revue hal-04560563v1
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Comprehensive Kubo-Greenwood modelling of FDSOI MOS devices down to deep cryogenic temperatures

Francesco Serra Di Santa Maria , Lauriane Contamin , Mikaël Cassé , Christoforos Theodorou , Francis Balestra et al.

Solid-State Electronics, 2022, 192, pp.108271. ⟨10.1016/j.sse.2022.108271⟩

Article dans une revue hal-04246049v1

Calculation of the mobility in Al2O3/GaN electron channel: Effect of p-doping and comparison with experiments

Bledion Rrustemi , François Triozon , Marie-Anne Jaud , William Vandendaele , Gérard Ghibaudo

Solid-State Electronics, 2022, 198, pp.108470. ⟨10.1016/j.sse.2022.108470⟩

Article dans une revue cea-04921920v1

Modeling and simulations of FDSOI five-gate qubit MOS devices down to deep cryogenic temperatures

E. Catapano , A. Aprà , M. Cassé , F. Gaillard , S. de Franceschi et al.

Solid-State Electronics, 2022, 193, pp.108291. ⟨10.1016/j.sse.2022.108291⟩

Article dans une revue hal-03974993v1
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Threshold voltage of p-type triple-gate junctionless transistors

T.A. Oproglidis , D.H. Tassis , A. Tsormpatzoglou , T.A. Karatsori , Christoforos Theodorou et al.

Solid-State Electronics, 2022, 197, pp.108451. ⟨10.1016/j.sse.2022.108451⟩

Article dans une revue hal-04305155v1
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Channel-Width-Dependent Mobility Degradation in Bulk Conduction Regime of Tri-Gate Junctionless Transistors

Dae-Young Jeon , Mireille Mouis , Sylvain Barraud , Gerard Ghibaudo

IEEE Transactions on Electron Devices, 2022, 69 (6), pp.3037-3041. ⟨10.1109/TED.2022.3172056⟩

Article dans une revue hal-03697387v1
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Detailed electrical characterization of 200mm CMOS compatible GaN/Si HEMTs down to deep cryogenic temperatures

Donghyun Kim , Christoforos Theodorou , A. Chanuel , Y. Gobil , M. Charles et al.

Solid-State Electronics, 2022, 197, pp.108448. ⟨10.1016/j.sse.2022.108448⟩

Article dans une revue hal-03769945v1
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Model Implementation of Lorentzian Spectra for Circuit Noise Simulations in the Frequency Domain

Angeliki Tataridou , Gerard Ghibaudo , Christoforos Theodorou

IEEE Journal of the Electron Devices Society, 2022, 10, pp.611-619. ⟨10.1109/JEDS.2022.3178352⟩

Article dans une revue hal-03762363v1

The Core-Shell Junctionless MOSFET

Sorin Cristoloveanu, , Gérard Ghibaudo

Solid-State Electronics, 2022, pp.108567. ⟨10.1016/j.sse.2022.108567⟩

Article dans une revue hal-03897336v1

Influence of substrate biasing on structural, chemical and electrical properties of Al 2 O 3 thin films deposited by PEALD

S Boubenia , G Lefevre , M Legallais , S Labau , F Bassani et al.

Semiconductor Science and Technology, 2022, 37 (6), pp.065001. ⟨10.1088/1361-6641/ac6287⟩

Article dans une revue hal-03867566v1
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Poisson-Schrödinger simulation and analytical modeling of inversion charge in FDSOI MOSFET down to 0 K – Towards compact modeling for cryo CMOS application

M. Aouad , T. Poiroux , S. Martinie , F. Triozon , M. Vinet et al.

Solid-State Electronics, 2021, 186, pp.108126. ⟨10.1016/j.sse.2021.108126⟩

Article dans une revue cea-04952484v1
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Front and back channels coupling and transport on 28 nm FD-SOI MOSFETs down to liquid-He temperature

Bruna Cardoso Paz , Mikaël Cassé , Sebastien Haendler , Andre Juge , Emmanuel Vincent et al.

Solid-State Electronics, 2021, 186, pp.108071. ⟨10.1016/j.sse.2021.108071⟩

Article dans une revue hal-03975016v1
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Statistical and electrical modeling of FDSOI four-gate qubit MOS devices at room temperature

Edoardo Catapano , Gerard Ghibaudo , Mikael Casse , Tadeu Mota Frutuoso , Bruna Cardoso Paz et al.

IEEE Journal of the Electron Devices Society, 2021, 9, pp.582-590. ⟨10.1109/JEDS.2021.3082201⟩

Article dans une revue hal-03455220v1

Origin of the Out-of-Equilibrium Body Potential In Silicon on Insulator Devices With Metal Contacts

M. Alepidis , G. Ghibaudo , Maryline Bawedin , Irina Ionica

IEEE Electron Device Letters, 2021, 42 (12), pp.1834-1837. ⟨10.1109/LED.2021.3122472⟩

Article dans une revue hal-04742996v1

Impact of hot carrier aging on the 1/f and random telegraph noise of short-channel triple-gate junctionless MOSFETs

Theodoros Oproglidis , Theano Karatsori , Christoforos Theodorou , Andreas Tsormpatzoglou , Sylvain Barraud et al.

IEEE Transactions on Device and Materials Reliability, 2021, 21 (3), pp.348-353. ⟨10.1109/TDMR.2021.3094510⟩

Article dans une revue hal-03334750v1
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Lambert-W Function-based Parameter Extraction for FDSOI MOSFETs Down to Deep Cryogenic Temperatures

F. Serra Di Santa Maria , L. Contamin , B. Cardoso Paz , M. Cassé , Christoforos Theodorou et al.

Solid-State Electronics, 2021, 186, pp.108175. ⟨10.1016/j.sse.2021.108175⟩

Article dans une revue hal-03368225v1
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New Compact Modeling Solutions for Organic and Amorphous Oxide TFTs

Benjamin Iniguez , Arokia Nathan , Alexander Kloes , Yvan Bonnassieux , Krunoslav Romanjek et al.

IEEE Journal of the Electron Devices Society, 2021, 9, pp.911-932. ⟨10.1109/JEDS.2021.3106836⟩

Article dans une revue hal-03325532v1

Investigation on interface charges in SiN/AlxGa1−xN/GaN heterostructures by analyzing the gate-to-channel capacitance and the drain current behaviors

Bledion Rrustemi , Marie-Anne Jaud , François Triozon , Clémentine Piotrowicz , William Vandendaele et al.

Journal of Applied Physics, 2021, 130, pp.105704. ⟨10.1063/5.0058019⟩

Article dans une revue cea-04822316v1
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On the diffusion current in a MOSFET operated down to deep cryogenic temperatures

Gérard Ghibaudo , M. Aouad , M. Casse , T. Poiroux , Christoforos Theodorou

Solid-State Electronics, 2021, 176, pp.107949. ⟨10.1016/j.sse.2020.107949⟩

Article dans une revue hal-03260956v1
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Accurate statistical extraction of AlGaN/GaN HEMT device parameters using the Y-function

R. Kom Kammeugne , C. Leroux , J. Cluzel , L. Vauche , C. Le Royer et al.

Solid-State Electronics, 2021, 184, pp.108078. ⟨10.1016/j.sse.2021.108078⟩

Article dans une revue cea-03250807v1

Influence of carbon on pBTI degradation in GaN-on-Si E-mode MOSc-HEMT

A. Viey , W. Vandendaele , M.-A. Jaud , L. Gerrer , X. Garros et al.

IEEE Transactions on Electron Devices, 2021, 68 (4), pp.2017-2024. ⟨10.1109/TED.2021.3050127⟩

Article dans une revue cea-04918499v1

Intrinsic Mechanism of Mobility Collapse in Short MOSFETs

Sorin Cristoloveanu, , Gerard Ghibaudo

IEEE Transactions on Electron Devices, 2021, 68 (10), pp.5090-5094. ⟨10.1109/TED.2021.3105083⟩

Article dans une revue hal-03353319v1
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Impact of channel length on the operation of junctionless transistors with substrate biasing

Dae-Young Jeon , Mireille Mouis , Sylvain Barraud , Gérard Ghibaudo

IEEE Transactions on Electron Devices, 2021, 68 (6), pp.3070-3073. ⟨10.1109/TED.2021.3069936⟩

Article dans une revue hal-03194757v1
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Precise Extraction of Charge Carrier Mobility for Organic Transistors

Yong Xu , Yun Li , Songlin Li , Francis Balestra , Gérard Ghibaudo et al.

Advanced Functional Materials, 2020, Emerging Thin‐Film Transistor Technologies and Applications, 30 (20), pp.1904508. ⟨10.1002/adfm.201904508⟩

Article dans une revue hal-02998279v1

Drain current local variability analysis in nanoscale junctionless FinFETs utilizing a compact model

T.A. Oproglidis , D.H. Tassis , A. Tsormpatzoglou , G. Ghibaudo , C.A. Dimitriadis

Solid-State Electronics, 2020, 170, pp.107835. ⟨10.1016/j.sse.2020.107835⟩

Article dans une revue hal-02991445v1

Parameter Extraction and Compact Modeling of OTFTs From 150 K to 350 K

Harold Cortes-Ordonez , C. Haddad , Krunoslav Romanjek , Xavier Mescot , Gérard Ghibaudo et al.

IEEE Transactions on Electron Devices, 2020, pp.1-8. ⟨10.1109/TED.2020.3032082⟩

Article dans une revue hal-02991438v1

A New Direct Measurement Method of Time Dependent Dielectric Breakdown at High Frequency

Melissa Arabi , Xavier Garros , Jacques Cluzel , Mustapha Rafik , Xavier Federspiel et al.

IEEE Electron Device Letters, 2020, 41 (10), pp.1460-1463. ⟨10.1109/LED.2020.3016383⟩

Article dans une revue hal-02961016v1

Evidence of 2D intersubband scattering in thin film fully depleted silicon-on-insulator transistors operating at 4.2 K

L. Le Guevel , G. Billiot , Bruna Cardoso Paz , M. Tagliaferri , Silvano de Franceschi et al.

Applied Physics Letters, 2020, 116 (24), pp.243502. ⟨10.1063/5.0007100⟩

Article dans une revue hal-03541768v1
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Channel width dependent subthreshold operation of tri-gate junctionless transistors

Dae-Young Jeon , Mireille Mouis , Sylvain Barraud , Gérard Ghibaudo

Solid-State Electronics, 2020, 171, pp.107860. ⟨10.1016/j.sse.2020.107860⟩

Article dans une revue hal-02922783v1
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On the modelling of temperature dependence of subthreshold swing in MOSFETs down to cryogenic temperature

Gérard Ghibaudo , Mohamed Aouad , Mikaël Cassé , Sebastien Martinie , Francis Balestra et al.

Solid-State Electronics, 2020, ⟨10.1016/j.sse.2020.107820⟩

Article dans une revue hal-03368147v1
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Effect of Gate Structure on the Trapping Behavior of GaN Junctionless FinFETs

Ki-Sik Im , Sung Jin An , Christoforos Theodorou , Gérard Ghibaudo , Sorin Cristoloveanu, et al.

IEEE Electron Device Letters, 2020, 41 (6), pp.832-835. ⟨10.1109/LED.2020.2991164⟩

Article dans une revue hal-02969750v1

A2RAM compact modeling: From DC to 1T-DRAM memory operation

F. Tcheme Wakam , J. Lacord , M. Bawedin , S. Martinie , S. Cristoloveanu et al.

Solid-State Electronics, 2020, 168, pp.107731. ⟨10.1016/j.sse.2019.107731⟩

Article dans une revue hal-02991446v1
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Improvement of AlN Film Quality Using Plasma Enhanced Atomic Layer Deposition with Substrate Biasing

Maxime Legallais , Hussein Mehdi , Sylvain David , Franck Bassani , Sébastien Labau et al.

ACS Applied Materials & Interfaces, 2020, 12 (35), pp.39870-39880. ⟨10.1021/acsami.0c10515⟩

Article dans une revue hal-03030507v1
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Controlling the effective channel thickness of junctionless transistors by substrate bias

Dae-Young Jeon , Mireille Mouis , Sylvain Barraud , Gérard Ghibaudo

IEEE Transactions on Electron Devices, 2020, 67 (11), pp.4736 - 4740. ⟨10.1109/TED.2020.3020284⟩

Article dans une revue hal-02963340v1
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(Invited) Second Harmonic Generation: A Powerful Non-Destructive Characterization Technique for Dielectric-on-Semiconductor Interfaces

Irina Ionica , Dimitrios Damianos , Anne Kaminski-Cachopo , Danièle Blanc-Pelissier , Gérard Ghibaudo et al.

ECS Transactions, 2020, 97 (1), pp.119-130. ⟨10.1149/09701.0119ecst⟩

Article dans une revue hal-02861584v1
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Analysis of the Role of Inter-Nanowire Junctions on Current Percolation Effects in Silicon Nanonet Field-Effect Transistors

T. Cazimajou , M. Mouis , M. Legallais , T.T.T. Nguyen , C. Ternon et al.

Solid-State Electronics, 2020, pp.107725. ⟨10.1016/j.sse.2019.107725⟩

Article dans une revue hal-02380107v1

Cryogenic Operation of Thin-Film FDSOI nMOS Transistors: The Effect of Back Bias on Drain Current and Transconductance

M. Casse , B. Cardoso Paz , G. Ghibaudo , T. Poiroux , S. Barraud et al.

IEEE Transactions on Electron Devices, 2020, 67 (11), pp.4636-4640. ⟨10.1109/TED.2020.3022607⟩

Article dans une revue hal-02991460v1

Modelling and analysis of gate leakage current and its wafer level variability in advanced FD-SOI MOSFETs

Krishna Pradeep , Thierry Poiroux , Patrick Scheer , Andre Juge , Gérard Ghibaudo

Solid-State Electronics, 2020, 163, pp.107643. ⟨10.1016/j.sse.2019.107643⟩

Article dans une revue hal-02321948v1
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Performance and Low-Frequency Noise of 22-nm FDSOI Down to 4.2 K for Cryogenic Applications

Bruna Cardoso Paz , Mikaël Cassé , Christoforos Theodorou , Gérard Ghibaudo , Thorsten Kammler et al.

IEEE Transactions on Electron Devices, 2020, 67 (11), pp.4563-4567. ⟨10.1109/TED.2020.3021999⟩

Article dans une revue hal-02969741v1
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Effects of Contact Potential and Sidewall Surface Plane on the Performance of GaN Vertical Nanowire MOSFETs for Low-Voltage Operation

Dong-Hyeok Son , Terirama Thingujam , Jeong-Gil Kim , Dae-Hyun Kim , In Man Kang et al.

IEEE Transactions on Electron Devices, 2020, 67 (4), pp.1547-1552. ⟨10.1109/TED.2020.2975599⟩

Article dans une revue hal-02969751v1

In-wafer variability in FD-SOI MOSFETs: detailed analysis and statistical modelling

Krishna Pradeep , Patrick Scheer , Thierry Poiroux , André Juge , Gérard Ghibaudo

Semiconductor Science and Technology, 2020, 35 (5), pp.055023. ⟨10.1088/1361-6641/ab7ab1⟩

Article dans une revue cea-04947546v1
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A Method for Series-Resistance-Immune Extraction of Low-Frequency Noise Parameters in Nanoscale MOSFETs

Angeliki Tataridou , Gerard Ghibaudo , Christoforos Theodorou

IEEE Transactions on Electron Devices, 2020, 67 (11), pp.4568-4572. ⟨10.1109/TED.2020.3026612⟩

Article dans une revue hal-03260917v1

Analysis of MIS-HEMT Device Edge Behavior for GaN Technology Using New Differential Method

R. Kom Kammeugne , C. Leroux , J. Cluzel , L. Vauche , C. Le Royer et al.

IEEE Transactions on Electron Devices, 2020, 67 (11), pp.4649-4653. ⟨10.1109/TED.2020.3015466⟩

Article dans une revue cea-02972351v1
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Impact of Hot Carrier Aging on the Performance of Triple-Gate Junctionless MOSFETs

Theodoros Oproglidis , Theano Karatsori , Christoforos Theodorou , Andreas Tsormpatzoglou , Sylvain Barraud et al.

IEEE Transactions on Electron Devices, 2020, 67 (2), pp.424-429. ⟨10.1109/TED.2019.2958457⟩

Article dans une revue hal-02461975v1

Analysis of the Electrical Properties of Different HgCdTe Passivations for Infrared Detectors

L. Mangin , F. Rochette , C. Lobre , P. Ballet , P. Duvaut et al.

Journal of Electronic Materials, 2019, ⟨10.1007/s11664-019-07253-z⟩

Article dans une revue hal-02136323v1
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Reliable Mobility Evaluation of Organic Field-Effect Transistors with Different Contact Metals

Fanming Huang , Ao Liu , Huihui Zhu , Yong Xu , Francis Balestra et al.

IEEE Electron Device Letters, 2019, 40 (4), pp.605 - 608. ⟨10.1109/LED.2019.2901315⟩

Article dans une revue hal-02050199v1

Endurance Statistical Behavior of Resistive Memories Based on Experimental and Theoretical Investigation

Diego Alfaro Robayo , Gilbert Sassine , Quentin Rafhay , Gérard Ghibaudo , Gabriel Molas et al.

IEEE Transactions on Electron Devices, 2019, pp.1-8. ⟨10.1109/TED.2019.2911661⟩

Article dans une revue hal-02126884v1

Charge Pumping in Ultrathin SOI Tunnel FETs: Impact of Back-Gate Voltage

Carlos Diaz Llorente , Christoforos Theodorou , Jean-Pierre Colinge , Sorin Cristoloveanu , Sébastien Martinie et al.

ECS Transactions, 2019, 89 (3), pp.111-120. ⟨10.1149/08903.0111ecst⟩

Article dans une revue hal-02415983v1

New Insights on device level TDDB at GHz speed in advanced CMOS nodes

M. Arabi , X. Federspiel , F. Cacho , M. Rafik , A.-P. Nguyen et al.

IEEE Transactions on Device and Materials Reliability, 2019, pp.1-1. ⟨10.1109/TDMR.2019.2914362⟩

Article dans une revue hal-02118352v1

Electrical characterization of advanced FDSOI CMOS devices

Gérard Ghibaudo

Composants nanoélectroniques, 2019, 2 (1), ⟨10.21494/ISTE.OP.2018.0304⟩

Article dans une revue hal-02010907v1
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New prospects on high on-current and steep subthreshold slope for innovative Tunnel FET architectures

C. Diaz Llorente , J.-P. Colinge , S. Martinie , S. Cristoloveanu , J. Wan et al.

Solid-State Electronics, 2019, 159, pp.26-37. ⟨10.1016/j.sse.2019.03.046⟩

Article dans une revue hal-02321885v1
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Doping profile extraction in thin SOI films: Application to A2RAM

F. Tcheme Wakam , J. Lacord , M. Bawedin , S. Martinie , S. Cristoloveanu et al.

Solid-State Electronics, 2019, 159, pp.3-11. ⟨10.1016/j.sse.2019.03.038⟩

Article dans une revue hal-02321935v1

Temperature dependence of TDDB at high frequency in 28FDSOI

M. Arabi , X. Federspiel , F. Cacho , M. Rafik , A.-P. Nguyen et al.

Microelectronics Reliability, 2019, 100-101, pp.113422. ⟨10.1016/j.microrel.2019.113422⟩

Article dans une revue hal-02361447v1

Impact of Wet Treatments on the Electrical Performance of Ge 0.9 Sn 0.1 -Based p-MOS Capacitors

Mohamed Aymen Mahjoub , Thibault Haffner , Sébastien Labau , Etienne Eustache , Joris Aubin et al.

ACS Applied Electronic Materials, 2019, 1 (2), pp.260-268. ⟨10.1021/acsaelm.8b00099⟩

Article dans une revue hal-02051071v1

Analytical expression of top surface charge sensitivity in fully depleted semiconductor on insulator MOS transistor

G. Ghibaudo , G. Pananakakis

Composants nanoélectroniques, 2019, 2 (1), ⟨10.21494/ISTE.OP.2019.0347⟩

Article dans une revue hal-02067076v1

Impact of CMOS TiN metal gate process on microstructure and its correlation with electrical properties

Pushpendra Kumar , Florian Domengie , Charles Leroux , Patrice Gergaud , G. Ghibaudo

MRS Advances, 2019, pp.1-7. ⟨10.1557/adv.2019.77⟩

Article dans une revue hal-02051062v1
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Characterization and modeling of 2DEG mobility in AlGaN/AlN/GaN MIS-HEMT

I. Nifa , C. Leroux , A. Torrès , M. Charles , G. Reimbold et al.

Microelectronic Engineering, 2019, 215, pp.110976. ⟨10.1016/j.mee.2019.05.003⟩

Article dans une revue hal-02145457v1

On the cumulative distribution function of the defect centric model for BTI reliability

D. Nouguier , G. Pananakakis , X. Federspiel , M. Rafik , D. Roy et al.

Microelectronics Reliability, 2019, 92, pp.168-171. ⟨10.1016/j.microrel.2018.12.003⟩

Article dans une revue hal-01953979v1

Bottom-up fabrication of InAs-on-nothing MOSFET using selective area molecular beam epitaxy

Matej Pastorek , Aurélien Olivier , Yoann Lechaux , Nicolas Wichmann , Theano Karatsori et al.

Nanotechnology, 2019, 30 (3), pp.035301. ⟨10.1088/1361-6528/aaebbd⟩

Article dans une revue hal-01955057v1

Low-Frequency Noise Characteristics of GaN Nanowire Gate-All-Around Transistors With/Without 2-DEG Channel

Ki-Sik Im , M. Siva Pratap Reddy , Raphaël Caulmilone , Christoforos Theodorou , Gérard Ghibaudo et al.

IEEE Transactions on Electron Devices, 2019, 66 (3), pp.1243 - 1248. ⟨10.1109/TED.2019.2894806⟩

Article dans une revue hal-02047570v1

New perspectives in defect centric model for NBTI reliability

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New Concept of Differential Effective Mobility in MOS Transistors

K. Bennamane , G. Ghibaudo

Active and Passive Electronic Components, 2019, 2019, pp.5716230. ⟨10.1155/2019/5716230⟩

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Impact of contact and channel resistance on the frequency-dependent capacitance and conductance of pseudo-MOSFET

S. Sato , G. Ghibaudo , L. Benea , I. Ionica , Y. Omura et al.

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Self-Heating Effect in FDSOI Transistors Down to Cryogenic Operation at 4.2 K

K. Triantopoulos , M. Cassé , S. Barraud , S. Haendler , E. Vincent et al.

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Novel On-Resistance based Methodology for MOSFET Electrical Characterization

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Upgrade of Drain Current Compact Model for Nanoscale Triple-Gate Junctionless Transistors to Continuous and Symmetric

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1/ f noise analysis in high mobility polymer-based OTFTs with non-fluorinated dielectric

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New NBTI models for degradation and relaxation kinetics valid over extended temperature and stress/recovery ranges

D. Nouguier , X. Federspiel , G. Ghibaudo , M. Rafik , D. Roy

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Origin of Low-Frequency Noise in Triple-Gate Junctionless n-MOSFETs

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Analytical expressions for subthreshold swing in FDSOI MOS structures

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Study of forward AC stress degradation of GaN-on-Si Schottky diodes

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Static and low frequency noise characterization of ultra-thin body InAs MOSFETs

T.A. Karatsori , M. Pastorek , C.G. Theodorou , A. Fadjie , Nicolas Wichmann et al.

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Essential Effects on the Mobility Extraction Reliability for Organic Transistors

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Field-effect passivation of Si by ALD-Al2O3: second harmonic generation monitoring and simulation

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New insights on SOI Tunnel FETs with low-temperature process flow for CoolCube™ integration

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Lambert W-function based modelling of P-OTFTs and application to low temperature measurements

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Analysis and modeling of wafer-level process variability in 28 nm FD-SOI using split C-V measurements

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Series resistance in different operation regime of junctionless transistors

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Compact modeling of nanoscale triple-gate junctionless transistors covering drift-diffusion to quasi-ballistic carrier transport

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Electrical characteristics of silicon percolating nanonet-based field effect transistors in the presence of dispersion

T. Cazimajou , M. Legallais , M. Mouis , C. Ternon , B. Salem et al.

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Determination of well flat band condition in thin film FDSOI transistors using C-V measurement for accurate parameter extraction

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Analytical Drain Current Compact Model in the Depletion Operation Region of Short-Channel Triple-Gate Junctionless Transistors

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1/f-Noise in AlGaN/GaN Nanowire Omega-FinFETs

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Comparison for 1/ f Noise Characteristics of AlGaN/GaN FinFET and Planar MISHFET

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IEEE Transactions on Electron Devices, 2017, 64 (9), pp.3634-3638. ⟨10.1109/TED.2017.2730919⟩

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Microelectronic Engineering, 2017, 178, pp.245-249. ⟨10.1016/j.mee.2017.05.047⟩

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Reliable gate stack and substrate parameter extraction based on C-V measurements for 14nm node FDSOI technology

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T.A. Karatsori , C.G. Theodorou , S. Haendler , G. Ghibaudo

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Quantitative Analysis of La and Al Additives Role on Dipole Magnitude Inducing Vt Shift in High-K/Metal Gate Stack

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Low Temperature Characterization of Hole Mobility in Sub-14nm Gate Length Si 0.7 Ge 0.3 Tri-Gate pMOSFETs

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C Nail. , G Molas. , P Blaise. , B Sklenard. , R Berthier. et al.

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Physics and performance of nanoscale semiconductor devices at cryogenic temperatures

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Solid-State Electronics, 2016, 117, pp.88-93. ⟨10.1016/j.sse.2015.11.011⟩

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Low-frequency noise in bare SOI wafers: Experiments and model

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Hot carrier degradation modeling of short-channel n-FinFETs suitable for circuit simulators

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Behavior of subthreshold conduction in junctionless transistors

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Microelectronic Engineering, 2016, 159, pp.9-16. ⟨10.1016/j.mee.2016.01.035⟩

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E.G. Ioannidis , S. Haendler , E. Josse , N. Planes , G. Ghibaudo

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Fabrication and electrical characterization of homo- and hetero-structure Si/SiGe nanowire Tunnel Field Effect Transistor grown by vapor–liquid–solid mechanism

V. Brouzet , B. Salem , P. Periwal , R. Alcotte , F. Chouchane et al.

Solid-State Electronics, 2016, 118, pp.26 - 29. ⟨10.1016/j.sse.2016.01.005⟩

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Microscopic Analysis of Erase-Induced Degradation in 40 nm NOR Flash Technology

Giulio Torrente , Jean Coignus , Alexandre Vernhet , Jean-Luc Ogier , David Roy et al.

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Characterization and Modeling of NBTI in Nanoscale UltraThin Body UltraThin Box FD-SOI MOSFETs

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IEEE Transactions on Electron Devices, 2016, 63 (12), pp.4913-4918. ⟨10.1109/TED.2016.2620720⟩

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Interface trap density evaluation on bare silicon-on-insulator wafers using the quasi-static capacitance technique

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Solid-State Electronics, 2016, 115, pp.126-132. ⟨10.1016/j.sse.2015.09.004⟩

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New Y -function based MOSFET parameter extraction method from weak to strong inversion range

J.B. Henry , Q. Rafhay , A. Cros , G. Ghibaudo

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Split-Capacitance and Conductance-Frequency Characteristics of SOI Wafers in Pseudo-MOSFET Configuration

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HfO2-Based OxRAM Devices as Synapses for Convolutional Neural Networks

Daniele Garbin , Elisa Vianello , Olivier Bichler , Quentin Rafhay , Christian Gamrat et al.

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Compact modeling of subthreshold swing in double gate and nanowire MOSFETs, for Si and GaAs channel materials

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Investigation of Forming, SET, and Data Retention of Conductive-Bridge Random-Access Memory for Stack Optimization

Jeremy Guy , Gabriel Molas , Philippe Blaise , Mathieu Bernard , Anne Roule et al.

IEEE Transactions on Electron Devices, 2015, 62 (11), pp.3482-3489. ⟨10.1109/TED.2015.2476825⟩

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Modeling of low-frequency noise in advanced CMOS devices

F. Balestra , G. Ghibaudo , J. Jomaah

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2015, 28 (6), pp.613-627. ⟨10.1002/jnm.2052⟩

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Low temperature characterization of mobility in 14nm FD-SOI CMOS devices under interface coupling conditions

Minju Shin , Ming Shi , Mireille Mouis , Antoine Cros , Emmanuel Josse et al.

Solid-State Electronics, 2015, 108, pp.30-35. ⟨10.1016/j.sse.2014.12.013⟩

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In depth characterization of electron transport in 14nm FD-SOI CMOS devices

Minju Shin , Ming Shi , Mireille Mouis , Antoine Cros , Emmanuel Josse et al.

Solid-State Electronics, 2015, 112, pp.13-18. ⟨10.1016/j.sse.2015.02.012⟩

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Non-Arrhenius conduction due to the interface-trap-induced disorder in X-doped amorphous In-X-Zn oxides thin-film transistors

Mohammed Benwadih , Jan Chroboczek , Gérard Ghibaudo , Romain Coppard , Dominique Vuillaume

Journal of Applied Physics, 2015, 117 (5), pp.055707. ⟨10.1063/1.4907681⟩

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Physically-based extraction methodology for accurate MOSFET degradation assessment

Giulio Torrente , Jean Coignus , Sophie Renard , Alexandre Vernhet , Gilles Reimbold et al.

Microelectronics Reliability, 2015, 55 (9-10), pp.1417-1421. ⟨10.1016/j.microrel.2015.06.063⟩

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Compact Model for Inversion Charge in III–V Bulk MOSFET Including Non-Parabolicity

Gaspard Hiblot , Gabriel Mugny , Quentin Rafhay , Frédéric Boeuf , Gérard Ghibaudo

IEEE Transactions on Nanotechnology, 2015, 14 (4), pp.768-775. ⟨10.1109/TNANO.2015.2444653⟩

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Full gate voltage range Lambert-function based methodology for FDSOI MOSFET parameter extraction

T.A. Karatsori , C.G. Theodorou , E.G. Ioannidis , S. Haendler , E. Josse et al.

Solid-State Electronics, 2015, 111, pp.123-128. ⟨10.1016/j.sse.2015.06.002⟩

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Refined Conformal Mapping Model for MOSFET Parasitic Capacitances Based on Elliptic Integrals

Gaspard Hiblot , Quentin Rafhay , Frédéric Boeuf , Gérard Ghibaudo

IEEE Transactions on Electron Devices, 2015, 62 (3), pp.972-979. ⟨10.1109/TED.2015.2388788⟩

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Impact of Source–Drain Series Resistance on Drain Current Mismatch in Advanced Fully Depleted SOI n-MOSFETs

E. Ioannidis , C. Theodorou , S. Haendler , E. Josse , C. Dimitriadis et al.

IEEE Electron Device Letters, 2015, 36 (5), pp.433-435. ⟨10.1109/LED.2015.2411289⟩

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Effective work function modulation by $sacrificial$ gate aluminum diffusion on HfON-based 14nm NMOS devices

C. Suarez-Segovia , C. Leroux , P. Caubet , F. Domengie , G. Reimbold et al.

Microelectronic Engineering, 2015, 147, pp.113-116. ⟨10.1016/j.mee.2015.04.062⟩

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Compact model of short-channel effects for FDSOI devices including the influence of back-bias and fringing fields for Si and III–V technology

G. Hiblot , J. Lacord , M. Akbal , Q. Rafhay , F. Boeuf et al.

Solid-State Electronics, 2015, 107, pp.1-7. ⟨10.1016/j.sse.2015.02.001⟩

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On the Origin of Improved Charge Transport in Double-Gate In–Ga–Zn–O Thin-Film Transistors: A Low-Frequency Noise Perspective

Yong Xu , Chuan Liu , Paul Seyram K. Amegadez , Gi-Seong Ryu , Huaixin Wei et al.

IEEE Electron Device Letters, 2015, 36 (10), pp.1040-1043. ⟨10.1109/LED.2015.2467164⟩

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Assessment of technological and geometrical device parameters by low-frequency noise investigation in SOI omega-gate nanowire NMOS FETs

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Solid-State Electronics, 2015, 108, pp.36-41. ⟨10.1016/j.sse.2014.12.010⟩

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Impact of trap localization on low-frequency noise in nanoscale device

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S. Morvan , F. Andrieu , J.-C. Barbé , G. Ghibaudo

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Significant roles of low-temperature post-metallization annealing in solution-processed oxide thin-film transistors

Yong Xu , Chuan Liu , Paul Seyram K. Amegadze , Won-Tae Park , Dang Xuan Xu et al.

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Low-Frequency Noise Sources in Advanced UTBB FD-SOI MOSFETs

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Evaluating injection and transport properties of organic field-effect transistors by the convergence point in transfer-length method

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Metal evaporation dependent charge injection in organic transistors

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IEEE Transactions on Electron Devices, 2013, 60, pp.2604-2610

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Static electrical characterization and low frequency noise of a-InHfZnO thin film transistors

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Grain boundary composition and conduction in HfO2: An ab initio study

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Applied Physics Letters, 2013, 102 (20), pp.201908. ⟨10.1063/1.4807666⟩

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Channel access resistance effects on charge carrier mobility and low-frequency noise in a polymethyl methacrylate passivated SnO2 nanowire field-effect transistors

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Applied Physics Letters, 2013, 102 (Issue 5), pp.053114. ⟨10.1063/1.4788708⟩

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Current Conduction Model for Oxide-Based Resistive Random Access Memory Verified by Low Frequency Noise Analysis

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Impact of Ge proportion on advanced SiGe bulk P-MOSFET matching performances

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Unexpected impact of germanium content in SiGe bulk PMOSFETs

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Solid-State Electronics, 2013, 86, pp.45-50. ⟨10.1016/j.sse.2013.04.024⟩

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Solid-State Electronics, 2013, 84, pp.46-52. ⟨10.1016/j.sse.2013.02.024⟩

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Electronics Letters, 2013, 49 (7), pp.490-491. ⟨10.1049/el.2012.4150⟩

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ANALYTICAL MODELS AND ELECTRICAL CHARACTERISATION OF ADVANCED MOSFETS IN THE QUASI BALLISTIC REGIME

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International Journal of High Speed Electronics and Systems, 2013, 22 (1), pp.1350002. ⟨10.1142/S012915641350002X⟩

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Effects of channel width variation on electrical characteristics of tri-gate Junctionless Transistors

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Solid-State Electronics, 2013, 81, pp.58-62. ⟨10.1016/j.sse.2013.01.002⟩

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Y function" method applied to saturation regime: Apparent saturation mobility and saturation velocity extraction

C. Diouf , A. Cros , S. Monfray , J. Mitard , J. Rosa et al.

Solid-State Electronics, 2013, 85, pp.12-14. ⟨10.1016/j.sse.2013.03.007⟩

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Origin of the low-frequency noise in n-channel FinFETs

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Solid-State Electronics, 2013, 82, pp.21-24. ⟨10.1016/j.sse.2013.01.009⟩

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New parameter extraction method based on split C-V measurements in FDSOI MOSFETs

I. Ben Akkez , A. Cros , C. Fenouillet-Beranger , F. Boeuf , Q. Rafhay et al.

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R. Coquand , S. Barraud , M. Casse , P. Leroux , C. Vizioz et al.

Solid-State Electronics, 2013, 88, pp.32-36. ⟨10.1016/j.sse.2013.04.006⟩

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Low-temperature electrical characterization of junctionless transistors

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Solid-State Electronics, 2013, 80, pp.135-141

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Strain-Induced Performance Enhancement of Trigate and Omega-Gate Nanowire FETs Scaled Down to 10-nm Width

R. Coquand , M. Cassé , D. Cooper , V. Maffini-Alvaro , M.-P. Samson et al.

IEEE Transactions on Electron Devices, 2013, 60, pp.727-732. ⟨10.1109/TED.2012.2231684⟩

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Back biasing effects in tri-gate junctionless transistors

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Solid-State Electronics, 2013, 87, pp.74-79. ⟨10.1016/j.sse.2013.06.004⟩

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Study of substrate orientations impact on Ultra Thin Buried Oxide (UTBOX) FDSOI High-K Metal gate technology performances

I. Ben Akkez , C. Fenouillet-Beranger , A. Cros , P. Perreau , S. Haendler et al.

Solid-State Electronics, 2013, 90, pp.134-142. ⟨10.1016/j.sse.2013.02.039⟩

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New method for the extraction of bulk channel mobility and flat-band voltage in junctionless transistors

D.Y. Jeon , S.J. Park , M. Mouis , S. Barraud , G.T. Kim et al.

Solid-State Electronics, 2013, 89, pp.139-141. ⟨10.1016/j.sse.2013.08.003⟩

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Sheet resistance measurement on AlGaN/GaN wafers and dispersion study

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Microelectronic Engineering, 2013, 109, pp.334-337. ⟨10.1016/j.mee.2013.03.161⟩

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Joule's law for organic transistors exploration: Case of contact resistance

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Journ. Appl. Phys., 2013, 113 (Issue 6), pp.no. 064507. ⟨10.1063/1.4792066⟩

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Static and low frequency noise characterization of N-type random network of carbon nanotubes thin film transistors

M.K. Joo , M. Mouis , D.Y. Jeon , G.T. Kim , U.J. Kim et al.

Journ. Appl. Phys., 2013, 114 (15), pp.154503:1-10. ⟨10.1063/1.4825221⟩

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Materials, Devices and Systems Science, Engineering and Architectures" (Proceedings of ISCDG'2012)

G. Ghibaudo , F. Balestra , S. Deleonibus

Guest Editors, 2013, 63 (1)

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How small the contacts could be optimal for nanoscale organic transistors?

Y. Xu , C. Liu , W. Scheideler , P. Darmawan , S.L. Li et al.

Organic Electronics, 2013, 14 (7), pp.1797-1804. ⟨10.1016/j.orgel.2013.04.014⟩

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Understanding Thickness-Dependent Charge Transport in Pentacene Transistors by Low-Frequency Noise

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IEEE Electron Device Letters, 2013, 34 (10), pp.1298-1300. ⟨10.1109/LED.2013.2277613⟩

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Low-frequency noise behavior of junctionless transistors compared to inversion-mode transistors

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Solid-State Electronics, 2013, 81, pp.101-104. ⟨10.1016/j.sse.2012.12.003⟩

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Investigating doping effects on high-kappa metal gate stack for effective work function engineering

Cédric Leroux , S. Baudot , M. Charbonnier , A. van Der Geest , P. Caubet et al.

Solid-State Electronics, 2013, 88, pp.21-26. ⟨10.1016/j.sse.2013.04.011⟩

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Impact of quantum effects on the short channel effects of III-V nMOSFETs in weak and strong inversion regimes

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Performance and Modeling of Si-Nanocrystal Double-Layer Memory Devices With High-k Control Dielectrics

Guillaume Gay , Gabriel Molas , Marc Bocquet , Eric Jalaguier , Marc Gély et al.

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Short channel mobility analysis of SiGe nanowire p-type field effect transistors: Origins of the strain induced performance improvement

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Applied Physics Letters, 2012, 101 (14), pp.143502. ⟨10.1063/1.4756910⟩

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Symmetrical unified compact model of short-channel double-gate MOSFETs

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Solid-State Electronics, 2012, 69, pp.55-61. ⟨10.1016/j.sse.2011.10.002⟩

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Revisited approach for the characterization of Gate Induced Drain Leakage

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Solid-State Electronics, 2012, 71, pp.37-41. ⟨10.1109/ULIS.2011.5757994⟩

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Flicker noise in n-channel nanoscale tri-gate fin-shaped field-effect transistors

C. Theodorou , N. Fasarakis , T. Hoffman , T. Chiarella , G. Ghibaudo et al.

Applied Physics Letters, 2012, 101 (24), pp.243512. ⟨10.1063/1.4772590⟩

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Diagnosis of low-frequency noise sources in contact resistance of staggered organic transistors

Y. Xu , T. Minari , T. Kazuito , R. Gwoziecki , F. Balestra et al.

Applied Physics Letters, 2011, 98, pp.033505

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From Atomistic to Device Level Investigation of Hybrid Redox Molecular/Silicon Field-Effect Memory Devices

Tiziana Pro , Julien Buckley , Régis Barattin , Adrian Calborean , Venera Aiello et al.

IEEE Transactions on Nanotechnology, 2011, 10 (2), pp.275-283. ⟨10.1109/TNANO.2009.2038612⟩

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Mobility analysis of surface roughness scattering in FinFET devices

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Solid-State Electronics, 2011, 62 (1), pp.195-201. ⟨10.1016/j.sse.2011.04.020⟩

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A Comparative Study of Surface-Roughness-Induced Variability in Silicon Nanowire and Double-Gate FETs

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IEEE Transactions on Electron Devices, 2011, 58 (8), pp.2274-2281. ⟨10.1109/TED.2011.2147318⟩

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Origin of Low-Frequency Noise in the Low Drain Current Range of Bottom-Gate Amorphous IGZO Thin-Film Transistors

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IEEE Electron Device Letters, 2011, 32 (7), pp.898-900. ⟨10.1109/LED.2011.2143386⟩

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Investigation of charge-trap memories with AlN based band engineered storage layers

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Solid-State Electronics, 2011, 58 (1), pp.68 - 74. ⟨10.1016/j.sse.2010.11.030⟩

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Analysis of charge sensitivity and low frequency noise limitation in silicon nanowire sensors

J.W. Lee , D. Jang , T. Kim , M. Mouis , G. Ghibaudo

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Measurement of Dipoles/Roll-Off /Work functions by coupling CV and IPE and study of their dependence on fabrication process

M. Charbonnier , Cédric Leroux , V. Cosnier , P. Besson , E. Martinez et al.

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Charge Localization during Program and Retention in Nitrided Read Only Memory-Like Nonvolatile Memory Devices

Emmanuel Nowak , E. Vianello , L. Perniola , Marc Bocquet , G. Molas et al.

Japanese Journal of Applied Physics, 2010, 49, pp.04DD12

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Source/drain optimization of underlapped lightly doped nanoscale double gate MOSFETs

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Microelectronic Engineering, 2010, 87, pp.23534-2357

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Modeling the Independent Double Gate Transistor in Accumulation Regime for 1TDRAM Application

V. Puget , G. Bossu , P. Masson , P. Mazoyer , R. Ranica et al.

IEEE Transactions on Electron Devices, 2010, 57 (4), pp.855-865

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Mobility enhancement by CESL strain in short-channel ultrathin SOI MOSFETs

L. Pham-Nguyen , C. Fenouillet-Beranger , G. Ghibaudo , T. Skotnicki , S. Cristoloveanu

Solid-State Electronics, 2010, 54 (2), pp.123-130

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Non-metallic effects in silicided gate MOSFETs

N. Rodrriguez , F. Gamiz , R. Clerc , C. Sampedro , A. Godoy et al.

Solid-State Electronics, 2010, 53 (12), pp.1313-1317

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Low-frequency noise in strained SiGe core-shell nanowire p-channel field effect transistors

J. Doyoung , J.W. Lee , Tachi Kiichi , L. Montes , T. Ernst et al.

Applied Physics Letters, 2010, 97, pp.073505

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Origin of low-frequency noise in pentacene field-effect transistors

Y. Xu , T. Minari , K. Tsukagoshi , J. Chroboczek , F. Balestra et al.

Solid-State Electronics, 2010, pp.In Press, Corrected Proof, Available online 4 February 2011

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Gate-all-around technology: Taking advantage of ballistic transport?

Huguenin J.L. , G. Bidal , S. Denorme , D. Fleury , N. Loubet et al.

Solid-State Electronics, 2010, 54 (9), pp.883-889

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Modeling Local Electrical Fluctuations in 45nm Heavily Pocket-implanted Bulk MOSFET

C. Mezzomo , A. Bajolet , A. Cathignol , E. Joss , G. Ghibaudo

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Analytical modeling for the current-voltage characteristics of lightly-doped symmetric double-gate MOSFETs

A. Tsormpatzoglou , D.H. Tassis , C.A. Dimitriadis , G. Ghibaudo , G. Pananakakis et al.

Microelectronic Engineering, 2010, 87, pp.1764-1768

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Modified transmission-line method for contact resistance extraction in organic field-effect transistors

Y. Xu , R. Gwoziecki , Isabelle Chartier , R. Coppard , F. Balestra et al.

Applied Physics Letters, 2010, 97, pp.063302

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Extraction of low-frequency noise in contact resistance of organic field-effect transistors

Y. Xu , T. Minari , K. Tsukagoshi , R. Gwoziecki , R. Coppard et al.

Applied Physics Letters, 2010, 97, pp.033503

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HfO2-based Gate Stacks Transport Mechanisms and Parameter Extraction

J. Coignus , Cédric Leroux , R. Clerc , R. Truche , G. Ghibaudo et al.

Solid-State Electronics, 2010, 54 (9), pp.972-978

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Direct evaluation of low-field mobility and access resistance in pentacene field-effect transistors

X. Yong , M. Takeo , T. Kazuhito , A. Chroboczek , G. Ghibaudo

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Unified soft breakdown MOSFETs compact model: From experiments to circuit simulation

L. Gerrer , M. Rafik , G. Ribes , G. Ghibaudo , E. Vincent

Microelectronics Reliability, 2010, 50, pp.1259-1262

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Analytical low-frequency noise model in the linear region of lightly doped nanoscale double-gate metal-oxide-semiconductor field-effect transistors

E.G. Ioannidis , G. Theodorou C. , A. Tsormpatzoglou , D.H. Tassis , K. Papathanasiou et al.

Journ. Appl. Phys., 2010, 108, pp.064512. ⟨10.1063/1.3483279S⟩

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Analysis of electron mobility in HfO2/TiN gate metal-oxide-semiconductor field effect transistors: The influence of HfO2 thickness, temperature and oxide charge

A. Negara , K. Cherkaoui , Hurley Hurley , C.D Young , P. Majhi et al.

Journ. Appl. Phys., 2009, 105 (2), pp.024510:1-8

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Reliability of charge trapping memories with high-k control dielectrics

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Microelectronic Engineering, 2009, 86, pp.1796-1803

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A comprehensive study of magnetoresistance mobility in short channel transistors: Application to strained and unstrained silicon-on-insulator field-effect transistors

M. Cassé , F. Rochette , L. Thevenod , N. Bhouri , F. Andrieu et al.

Journ. Appl. Phys., 2009, 105 (8), pp.084503:1-9

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In Situ Comparison of Si/High- K and Si/SiO2 Channel Properties in SOI MOSFETs

L. Pham-Nguyen , C. Fenouillet-Beranger , A. Vandooren , T. Skotnicki , G. Ghibaudo et al.

IEEE Electron Device Letters, 2009, 30 (10), pp.1075-1077. ⟨10.1109/LED.2009.2027141⟩

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Piezoresistance Effect of Strained and Unstrained Fully-Depleted Silicon-On-Insulator MOSFETs Integrating an HfO2/TiN Gate Stack

F. Rochette , M. Cassé , M. Mouis , A. Haziot , T. Pioger et al.

Solid-State Electronics, 2009, 53 (3), pp.392-396

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Folded fully depleted FET using Silicon-On-Nothing technology as a highly W-scaled planar solution

G. Bidal , N. Loubet , C. Fenouillet-Beranger , S. Denorme , P. Perreau et al.

Solid-State Electronics, 2009, 53, pp.735-740

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Abnormally high local electrical fluctuations in heavily pocket-implanted bulk long MOSFET

S. Bordez , A. Cros , K. Rochereau , G. Ghibaudo

Solid-State Electronics, 2009, 53 (2), pp.127-133

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Low-Temperature Electrical Characterization of Fully Depleted eXtra-strained SOI n-MOSFETs with TiN/HfO2 Gate Stack for the 32-nm Technology Node

Sylvain Feruglio , François Andrieu , Faynot Olivier , Gérard Ghibaudo

Cryogenics, 2009, 49 (11), pp.605-610. ⟨10.1016/j.cryogenics.2008.12.004⟩

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Performances Comparison of Si and GaAs Based Resonant Tunneling Diodes

E. Buccafurri , R. Clerc , F. Calmon , M.G. Pala , A. Poncet et al.

Physica Status Solidi C: Current Topics in Solid State Physics, 2009, 6 (6), pp.1408-1411

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DC and Low Frequency Noise Characterization of FinFET Devices

K. Bennamane , T. Boutchacha , G. Ghibaudo , M. Mouis , N. Collaert

Solid-State Electronics, 2009, 53, pp.1263-1267

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Tuning the dipole at the High-/SiO2 interface in advanced metal gate stacks.

M. Charbonnier , Cédric Leroux , V. Cosnier , P. Besson , F. Martin et al.

Microelectronic Engineering, 2009, 86, pp.1740-1742

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A New Technique to Extract the Source/Drain Series Resistance of MOSFETs

Dominique Fleury , Antoine Cros , Grégory Bidal , Julien Rosa , Gérard Ghibaudo

IEEE Electron Device Letters, 2009, 30 (9), pp.975 - 977. ⟨10.1109/LED.2009.2026592⟩

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Backscattering coefficient and drift-diffusion mobility extraction in short channel MOS devices

I. Pappas , G. Ghibaudo , C.A. Dimitriadis , C. Fenouillet-Beranger

Solid-State Electronics, 2009, 53 (1), pp.54-56

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Experimental characterization of the subthreshold leakage current in triple-gate FinFETs

A. Tsormpatzoglou , C.A. Dimitriadis , M. Mouis , G. Ghibaudo , N. Collaert

Solid-State Electronics, 2009, 53 (3), pp.359-363

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Electrical characterization and design optimization of FinFETs with a TiN/HfO2 gate stack

A. Tsormpatzoglou , D.H. Tassis , C.A. Dimitriadis , M. Mouis , G. Ghibaudo et al.

Semiconductor Science and Technology, 2009, 24 (12), pp.125001:6

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Impact of a HTO/Al$_2$O$_3$ bi-layer blocking oxide in nitride-trap non-volatile memories

Marc Bocquet , G. Molas , L. Perniola , X. Garros , J. Buckley et al.

Solid-State Electronics, 2009, 53, pp.786 - 791. ⟨10.1016/j.sse.2009.03.018⟩

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Low frequency noise analysis in HfO2/SiO2 gate oxide fully depleted silicon on insulator transistors

L. Zafari , J. Jomaah , G. Ghibaudo , O. Faynot

Journal of Vacuum Science and Technology, 2009, 27 (1), pp.402-405

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SiO2 interfacial layer as the origin of the breakdown of high- dielectrics stacks

M. Rafik , G. Ribes , Daniel Roy , G. Ghibaudo

Journal of Vacuum Science and Technology, 2009, 27 (1), pp.395-399

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Method for extraction of  parameter characterizing µeff vs Eeff curves in FD-SOI Si MOS devices

K. Bennamane , G. Ghibaudo , A. Benfdila

Electronics Letters, 2009, 45 (12), pp.655-657

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EKV3 compact modeling of MOS transistors from a 0.18 µm CMOS technology for mixed analog-digital circuit design at low temperature

P. Martin , M. Cavelier , R. Fascio , G. Ghibaudo , M. Bucher

Cryogenics, 2009, pp.In Press, Corrected Proof, Available online 1 January 2009

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Contact etch stop a-Si<sub>x</sub>N<sub>y</sub>:H layer: A key factor for single polysilicon flash memory data retention

G. Beylier , D. Benoit , P. Mora , S. Bruyère , G. Ghibaudo

Journal of Vacuum Science and Technology, 2009, 27 (1), pp.486-489. ⟨10.1116/1.3071846⟩

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Analytical Modeling of Tunneling Current through SiO2-HfO2 Stacks in MOS Structures

J. Coignus , R. Clerc , Cédric Leroux , G. Reimbold , G. Ghibaudo et al.

Journal of Vacuum Science and Technology, 2009, 27 (1), pp.338-345. ⟨10.1116/1.3043539⟩

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Investigation of Hybrid Molecular/Silicon Memories With Redox-Active Molecules Acting as Storage Media

T. Pro , J. Buckley , K. Huang , A. Calborean , M. Gely et al.

IEEE Transactions on Nanotechnology, 2009, 8 (2), pp.204-213. ⟨10.1109/TNANO.2008.2009875⟩

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Method for 3D electrical parameters dissociation and extraction in multichannel MOSFET (MCFET)

C. Dupré , T. Ernst , E. Bernard , B. Guillaumot , N. Vulliet et al.

Solid-State Electronics, 2009, 53, pp.746-752

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Compact drain current model of short-channel cylindrical gate-all-around MOSFETs

A. Tsormpatzoglou , C.A. Dimitriadis , G. Ghibaudo , G. Pananakakis

Semiconductor Science and Technology, 2009, 24, pp.075017

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Analysis of spatial and energy slow trap profile in HfO2/SiO2 metal-oxide-silicon devices by low frequency noise measurements

L. Zafari , J. Jomaah , G. Ghibaudo

Fluctuation and Noise Letters, 2008, 8, L99

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New Characterization Methodology of Borderless Silicon Nitride Charge Kinetics Using C-V Hysteresis Loops

G. Beylier , S. Bruyère , P. Mora , G. Ghibaudo

Journal of The Electrochemical Society, 2008, 155, H273-H279

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The Quantization Impact of Accumulated Carriers in Silicide-Gated MOSFETs

N. Rodriguez , F. Gámiz , L. Donetti , R. Clerc , G. Ghibaudo et al.

IEEE Electron Device Letters, 2008, 29, pp.628-631

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Impact of Silicon nitride CESL on NLDEMOS transistor reliability,

G. Beylier , S. Bruyère , D. Benoit , G. Ghibaudo

Microelectronics Reliability, 2008, 48 (8-9), pp.1539-1543

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Semi-analytical modelling of short channel effects in Si Double-Gate, Tri-Gate and Gate-All-Around MOSFETs

A. Tsormpatzoglou , C.A. Dimitriadis , R. Clerc , G. Pananakakis , G. Ghibaudo

Physica Status Solidi C: Current Topics in Solid State Physics, 2008, 5 (12), pp.3605-3608

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Physical Understanding of the Hooge Parameter in ZnO Nanowire Devices.

J. Lee , I. Han , B.Y. Yu , G.C. Yi , G. Ghibaudo

Journal of the Korean Physical Society, 2008, 53, pp.339-342

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Semi-analytical modeling of short channel effects in Si and Ge symmetrical double-gate MOSFETs

A. Tsormpatzoglou , C. Dimitriadis , R. Clerc , Q. Rafhay , G. Pananakakis et al.

IEEE Transactions on Electron Devices, 2008, 54 (8), pp.1943-1946

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Impact of inside spacer process on fully self-aligned 250 GHz SiGe:C HBTs reliability performances: a-Si vs. Nitride

Mame Andallah Diop , N. Revil , M. Marin , F. Monsieur , P. Chevalier et al.

Microelectronics Reliability, 2008, 48 (8-9), pp.1198-1201

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Threshold Voltage Model for Short-Channel Undoped symmetrical Double-Gate MOSFETs

A. Tsormpatzoglou , C.A. Dimitriadis , R. Clerc , G. Pananakakis , G. Ghibaudo

IEEE Transactions on Electron Devices, 2008, 55, 2512

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Quantitative Evaluation of Statistical Variability Sources in a 45nm Technological Node LP N-MOSFET

A. Cathignol , B. Cheng , D. Chanemougame , A. R. Brown , K. Rochereau et al.

IEEE Electron Device Letters, 2008, 29 (6), pp.609-611

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Extraction of eta parameter characterising µ(eff) against E-eff curves in strained Si nMOS devices

K. Bennamane , M. Demichielis , G. Ghibaudo , D. Esseni

Electronics Letters, 2008, 44, 1219-1220

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On the Physical Origins of Mismatch in Si/SiGe:C Heterojunction Bipolar Transistors for BiCMOS Technologies.

S. Danaie , M. Marin , G. Ghibaudo

Solid-State Electronics, 2008, 52, 323

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3D nanowire gate-all-around transistors: Specific integration and electrical features

C. Dupré , T. Ernst , V. Maffini-Alvaro , V. Delaye , J.-M. Hartmann et al.

Solid-State Electronics, 2008, 52, 519

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Low-frequency noise characterization of ZnO nanorod back-gate field-effect transistor structure

J. Lee , B.Y. Yu , C.H. Lee , G.C. Yi , S.H. Son et al.

Physica E: Low-dimensional Systems and Nanostructures, 2008, 40, 2147-2149

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Evaluation of HfAlO high-k materials for control dielectric applications in non-volatile memories.

G. Molas , Marc Bocquet , J. Buckley , H. Grampeix , M. Gély et al.

Microelectronic Engineering, 2008, 85, 2393-2399

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Automatic Extraction Methodology for Accurate Measurements of Effective Channel Length on 65nm MOSFET Technology and Below.

D. Fleury , A. Cros , K. Romanjek , Daniel Roy , F. Perrier et al.

IEEE Transactions on Semiconductor Manufacturing, 2008

Article dans une revue hal-00391695v1

Modeling and simulation of coupling effect on low frequency noise in advance SOI MOSFETs.

L. Zafari , J. Jomaah , G. Ghibaudo

Fluctuation and Noise Letters, 2008, 8, L87

Article dans une revue hal-00391713v1

Impact of source-to-drain tunnelling on the scalability of arbitrary oriented alternative channel material nMOSFETs

Q. Rafhay , R. Clerc , G. Ghibaudo , G. Pananakakis

Solid-State Electronics, 2008, 52 (Issue 10), pp.1474-1481

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Automatic extraction methodology for accurate measurement of effective channel length on 65nm MOSFET technology and Below

Dominique Fleury , Antoine Cros , Krunoslav Romanjek , David Roy , Franck Perrier et al.

IEEE Transactions on Semiconductor Manufacturing, 2008, 21 (4), pp.504 - 512. ⟨10.1109/TSM.2008.2004316⟩

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Origin of the Asymmetry in the Statistical Variability of n- and p-channel Poly Si Gate Bulk MOSFETs

A. Asenov , A. Cathignol , B. Cheng , K. P. Mckenna , A. R. Brown et al.

IEEE Electron Device Letters, 2008, 29, 913

Article dans une revue hal-00391676v1

In-depth Electrical Characterization of sub-45nm fully depleted strained SOI MOSFETs with TiN/HfO2 gate stack

Sylvain Feruglio , F. Andrieu , O. Faynot , G. Ghibaudo

Solid-State Electronics, 2008, 55, 489 (4), ⟨10.1016/j.sse.2007.10.039⟩

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Impact of Channel Orientation on Ballistic Current of nDGFETs with Alternative Channel Materials

Q. Rafhay , R. Clerc , M. Ferrier , G. Pananakakis , G. Ghibaudo

Solid-State Electronics, 2008, 52 (Issue 4), pp.540-547

Article dans une revue hal-00391540v1

Experimental evidence of mobility enhancement in short-channel ultra-thin body double-gate MOSFETs by magnetoresistance technique

W. Chaisantikulwat , M. Mouis , G. Ghibaudo , S. Cristoloveanu , J. Widiez et al.

Solid-State Electronics, 2007, 51 (11-12), pp.1494-1499

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Comparison of carrier velocity gain in Uniaxially and Biaxially Strained N-MOSFETs

T. Benshidoum , G. Ghibaudo , F. Boeuf

Electronics Letters, 2007, 43, pp.647648

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Borderless silicon nitride defect behaviour and their influences on initial data loss in single polysilicon flash memories

G. Beylier , S. Bruyère , G. Ghibaudo

Microelectronic Engineering, 2007, 84 (9-10), pp.1990-1993

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Impact of TiN plasma post-treatment on alumina electron trapping

A. Bajolet , S. Bruyère , M. Proust , L. Montès , G. Ghibaudo

IEEE Transactions on Device and Materials Reliability, 2007, 7 (2), pp.242-251

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High threshold voltage matching performance on gate-all-around MOSFET

A. Cathignol , A. Cros , S. Harrison , R. Cerrutti , P. Coronel et al.

Solid-State Electronics, 2007, 51 (11-12), pp.1450-1457. ⟨10.1016/j.sse.2007.09.033⟩

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Refined electrical analysis of two charge states transition characteristic of "borderless" silicon nitride

G. Beylier , S. Bruyere , D. Benoit , G. Ghibaudo

Microelectronics Reliability, 2007, 47 (4-5), pp.660-664

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Initial and PBTI-induced traps and charges in Hf-based oxides/TiN stacks

G. Reimbold , J. Mitard , X. Garros , Cédric Leroux , G. Ghibaudo et al.

Microelectronics Reliability, 2007, 47 (4-5), pp.660-664

Article dans une revue hal-00393386v1

Modified space-charge limited conduction in tantalum pentoxide MIM capacitors

V. Martinez , C. Besset , F. Monsieur , L. Montès , G. Ghibaudo

Microelectronic Engineering, 2007, 84 (9-10), pp.2310-2313

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Low frequency noise in biaxially strained silicon n-MOSFETs with ultrathin gate

T. Contaret , B. Touati , G. Ghibaudo , F. Bœuf , T. Skotnicki

Solid-State Electronics, 2007, 51 (4), pp.633-637

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Carrier mobility degradation due to high dose implantation in ultrathin unstrained and strained silicon-on-insulator films

C. Dupré , T. Ernst , J.-M. Hartmann , F. Andrieu , J.-P. Barnes et al.

Journ. Appl. Phys, 2007, 102 (10), pp.104505:1-8

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Automatic statistical full quantum analysis of C-V and I-V characteristics for advanced MOS gate stacks

Cédric Leroux , F. Allain , A. Toffoli , G. Ghibaudo , G. Reimbold

Microelectronic Engineering, 2007, 84 (9-10), pp.2408-2411

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Tensile strain in arsenic heavily doped Si

G. Borot , L. Rubaldo , L. Clément , R. Pantel , D. Dutartre et al.

Journ. Appl. Phys, 2007, 102 (10), pp.103505:1-5

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Low frequency noise in multi-gate SOI CMOS devices

Leily Zafari , Jalal Jomaah , Gérard Ghibaudo

Solid-State Electronics, 2007, 51 (2), pp.292-298. ⟨10.1016/j.sse.2007.01.005⟩

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Ultra thin fully depleted SOI MOSFETs: Special charge properties and coupling effects

S. Eminente , S. Cristoloveanu , R. Clerc , A. Ohata , Gérard Ghibaudo

Solid-State Electronics, 2007, 51, pp.239-244

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Conventional Technological Boosters for Injection Velocity in Ultrathin-Body MOSFETs

M. Ferrier , Raphael Clerc , L. Lucci , Quentin Rafhay , Georges Pananakakis et al.

IEEE Transactions on Nanotechnology, 2007, 6 (6), pp.613-621

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Accurate determination of flat band voltage in advanced MOS structure

Charles Leroux , G. Ghibaudo , G. Reimbold

Microelectronics Reliability, 2007, 47 (4-5), pp.743-747

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The influence of HfO2 film thickness on the interface state density and low field mobility of n channel HfO2/TiN gate MOSFETs

M. Negara , K. Cherkaoui , P. Majhi , C. Young , W. Tsai et al.

Microelectronic Engineering, 2007, 84 (9-10), pp.1874-1877

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Low temperature characterization of effective mobility in uniaxially and biaxially strained N-MOSFETs

F. Lime , F. Andrieu , J. Derix , Gérard Ghibaudo , F. Boeuf et al.

Solid-State Electronics, 2006, 50, pp.644

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Analytical model for quantization on strained and unstrained bulk nMOSFET and its impact on quasi-ballistic current

M. Ferrier , R. Clerc , Gérard Ghibaudo , F. Boeuf , T. Skotnicki

Solid-State Electronics, 2006, 50, pp.69-77

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Origin of Vt instabilities in high-k dielectrics: Jahn-Tellet effects or oxygen vacancies

G. Ribes S. Bruyère D. Roy C. Parthasarathy M. Muller M. Denais V. Huard T. Skotnicki , G. Ghibaudo

IEEE Transactions on Device and Materials Reliability, 2006, 6, pp.132

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Modeling and optimization of series resistance of planar MIM capacitors

A. Bajolet , R. Clerc , E. Picollet , N. Segura , S. Boret et al.

Solid-State Electronics, 2006, 50, pp.1244

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Low temperature characterization of effective mobility in uniaxially and biaxially strained N-MOSFETs

F. Lime , F. Andrieu , J. Derix , Gérard Ghibaudo , F. Boeuf et al.

Solid-State Electronics, 2006, 50, pp.644

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Excess drain noise simulations in ultra thin oxides MOSFETs

T. Contaret , Gérard Ghibaudo , A. Ferron , F. Bœuf

Journal of Computational Electronics, 2006, 5, pp.187

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Modeling and optimization of series resistance of planar MIM capacitors

A. Bajolet , R. Clerc , G. Pananakakis , E. Picollet , N. Segura et al.

Solid-State Electronics, 2006, 50, pp.1244-1251

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Analytical compact model for quantization in undoped double-gate metal oxide semiconductor field effect transistors and its impact on quasi-ballistic current

Marlène Ferrier , Raphaël Clerc , Georges Pananakakis , Gérard Ghibaudo , Frédéric Boeuf et al.

Japanese Journal of Applied Physics Part 1: Regular Papers and Short Notes and Review Papers, 2006, 45 (45), pp.3088. ⟨10.1143/JJAP.45.3088⟩

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Impact of gate polysilicon interface on carrier trapping low frequency noise in advanced MOSFET's

Gérard Ghibaudo , J. Jomaah , F. Balestra

Fluctuations and noise letters, 2006, 6, pp.L427

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Performance and Physics of sub-50nm Strained Si on Si1-xGex-On-Insulator (SGOI) MOSFETs

F. Andrieu , T. Ernst , O. Faynot , O. Rozeau , Y. Bogumilowicz et al.

Solid-State Electronics, 2006, 50, pp.566

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Differential Magnetoresistance Technique for Mobility Extraction in Ultra-Short Channel FDSOI Transistors

Gérard Ghibaudo , W. Chaisantikulwat , Mireille Mouis , C. Gallon , C. Fenouillet-Beranger et al.

Solid-State Electronics, 2006, 50 Issue 4, pp.637-643. ⟨10.1016/j.sse.2006.03.035⟩

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Analytical Compact Model for Quantization in Undoped Double-Gate Metal Oxide Semiconductor Field Effect Transistors and Its Impact on Quasi-Ballistic Current

M. Ferrier , R. Clerc , G. Pananakakis , Gérard Ghibaudo , F. Bœuf et al.

Jpn. J. Appl. Phys, 2006, 45, Part 1, No. 4B, pp.3088-3096

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A new degradation mode for advanced heterojunction bipolar transistors under reverse bias stress

M. Ruat , A. Pakfar , N. Revil , G. Pananakakis , Gérard Ghibaudo

IEEE Transactions on Device and Materials Reliability, 2006, 6, pp.154

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Performance and Physics of sub-50nm Strained Si on Si1-xGex-On-Insulator (SGOI) nMOSFETs

F. Andrieu , T. Ernst , O. Faynot , O. Rozeau , Y. Bogumilowicz et al.

Solid-State Electronics, 2006, 50, pp.566

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Origin of Vt instabilities in high-k dielectrics: Jahn-Tellet effects or oxygen vacancies

G. Ribes , S. Bruyère , D. Roy , C. Parthasarathy , M. Muller et al.

IEEE Transactions on Device and Materials Reliability, 2006, 6, pp.132

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Electron mobility in quasi ballistic Si MOSFETs

J. Lusakowski , W. Knap , Y. Meziani , J.- P. Cesso , A. El Fatimy et al.

Solid-State Electronics, 2006, 50, pp.632

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Degradation of floating gate memory reliability by few electron phenomena

G. Molas , D. Deleruyelle , B. Desalvo , Gérard Ghibaudo , M. Gely et al.

IEEE Transactions on Electron Devices, 2006, 53, pp.2610

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Electron mobility in quasi ballistic Si MOSFETs

J. Łusakowski , W. Knap , Y. Meziani , J.P. Cesso , A. El Fatimy et al.

Solid-State Electronics, 2006, 50, pp.632

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Impact of gate polysilicon interface on carrier trapping low frequency noise in advanced MOSFET's

Gérard Ghibaudo , J. Jomaah , F. Balestra

Fluctuations and noise letters, 2006, 6, pp.L427

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New features on the SILC in MOSFET's with ultrathin oxides

D. Bauza , Gérard Ghibaudo , F. Lime , F. Rahmoune

Symposium on the Physics and Chemistry of SiO_2 and the Si-SiO_2 Interface - 5, H.Z. Massoud, 2005, 1-56677-430-6

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A simple approach to account for the impact of quantum confinement on the charge in semi classical montecarlo simulations of Bulk nMOSFETs

R. Hudé , D. Villanueva , R. Clerc , Gérard Ghibaudo , E. Robilliart

ULtimate Integration of Silicon (ULIS) Workshop 2005, 2005, XX, pp.XX

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On the SILC mechanism in MOSFETS with ultra thin oxides

D. Bauza , Gérard Ghibaudo , F. Rahmoune

Microelectronics Reliability, 2005, vol. 45, pp.849-852

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Analytical model of the effects of a nonuniform distribution of stored charge on the electrical characteristics of discrete-trap nonvolatile memories

L. Perniola , S. Bernardini , G. Iannaconne , P. Masson , B. de Salvo et al.

IEEE Transactions on Nanotechnology, 2005, 4 (3), pp.360-368. ⟨10.1109/tnano.2005.847033⟩

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Characterization of the effective mobility by split C(V) technique in sub 0.1µm Si and SiGe PMOSFETs

K. Romanjek , F. Andrieu , T. Ernst , Gérard Ghibaudo

Solid-State Electronics, 2005, pp.0

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Low frequency noise in advanced Si bulk and SOI MOSFETs

J. Jomaah , F. Balestra , Gérard Ghibaudo

Journal of Telecommunications and Information Technology, 2005, pp.24-33

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Analytical model of the effects of a non-uniform distribution of stored charge on the electrical characteristics of discrete-trap memories

L. Perniola , G. Iannacone , B. Desalvo , Gérard Ghibaudo

IEEE Transactions on Nanotechnology, 2005, 4, n°3, pp.360-365

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Compact model for quasi ballistic transport and quantization in strained and unstrained bulk MOSFETs

M. Ferrier , R. Clerc , Gérard Ghibaudo , F. Boeuf , T. Skotnicki

ULtimate Integration of Silicon (ULIS) Workshop 2005, 2005, XX

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Modeling of the programming window distribution in multinanocrystals memories

L. Perniola , B. de Salvo , G. Ghibaudo , A. Foglio Para , G. Pananakakis et al.

IEEE Transactions on Nanotechnology, 2003, VOL. 2, NO. 4, p. 277, (2003)

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Gate and Substrate Currents in Deep Submicron MOSFETs

B. Szelag , F. Balestra , G. Ghibaudo , M. Dutoit

Journal de Physique IV Proceedings, 1996, 06 (C3), pp.C3-61-C3-66. ⟨10.1051/jp4:1996309⟩

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Characterization and Modeling of Silicon CMOS Transistor Operation at Low Temperature

G. Ghibaudo , F. Balestra

Journal de Physique IV Proceedings, 1996, 06 (C3), pp.C3-3-C3-11. ⟨10.1051/jp4:1996301⟩

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Study of saturation velocity overshoot in deep submicron silicon MOSFETS from liquid helium up to room temperature

K. Rais , G. Ghibaudo , F. Balestra , M. Dutoit

Journal de Physique IV Proceedings, 1994, 04 (C6), pp.C6-19-C6-24. ⟨10.1051/jp4:1994603⟩

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Modeling of self-heating effects in thin-film soi MOSFET's as a function of temperature

J. Jomaah , G. Ghibaudo , F. Balestra

Journal de Physique IV Proceedings, 1994, 04 (C6), pp.C6-57-C6-62. ⟨10.1051/jp4:1994609⟩

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A NEW METHOD FOR THE EXTRACTION OF MOSFET PARAMETERS AT AMBIENT AND LIQUID HELIUM TEMPERATURES

F. Balestra , L. Hafez , G. Ghibaudo

Journal de Physique Colloques, 1988, 49 (C4), pp.C4-817-C4-820. ⟨10.1051/jphyscol:19884172⟩

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Etude de silicium implanté à l'arsenic par effet de transport. Influence du recuit thermique

C. Christofidès , G. Ghibaudo , H. Jaouen

Revue de Physique Appliquée, 1987, 22 (6), pp.407-412. ⟨10.1051/rphysap:01987002206040700⟩

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Transport dans la couche d'inversion d'un transistor MOS. Utilité du formalisme de Kubo-Greenwood

G. Ghibaudo

Revue de Physique Appliquée, 1986, 21 (2), pp.121-129. ⟨10.1051/rphysap:01986002102012100⟩

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Etude et modélisation de la dégradation des transistors MOS submicroniques soumis à une contrainte électrique

B. Cabon-Till , G. Ghibaudo

Revue de Physique Appliquée, 1986, 21 (5), pp.305-318. ⟨10.1051/rphysap:01986002105030500⟩

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Influence of source-drain series resistance on MOSFET field-effect mobility

B. Cabon-Till , G. Ghibaudo , S. Cristoloveanu

Electronics Letters, 1985, 21 (11), pp.457-458. ⟨10.1049/el:19850324⟩

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DENSIFICATION OF THERMAL SIO2 DUE TO INTRINSIC OXIDATION STRESSING

A Fargeix , G. Ghibaudo

Journal of Physics D: Applied Physics, 1984, 17 (11), pp.2331-2336. ⟨10.1088/0022-3727/17/11/020⟩

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Le matériau silicium sur saphir en France. Revue des propriétés physico-chimiques et électriques

S. Cristoloveanu , G. Ghibaudo , G. Kamarinos

Revue de Physique Appliquée, 1984, 19 (2), pp.161-185. ⟨10.1051/rphysap:01984001902016100⟩

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Conductivity near a mobility edge in 2D electronic systems

G. Ghibaudo

Journal of Physics C: Solid State Physics, 1984, 17 (17), pp.3067-3072. ⟨10.1088/0022-3719/17/17/015⟩

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Le matériau silicium sur saphir en France. Revue des propriétés physico-chimiques et électriques

S. Cristoloveanu , G. Ghibaudo , G. Kamarinos

Revue de Physique Appliquée, 1984, 19 (2), pp.161-185. ⟨10.1051/rphysap:01984001902016100⟩

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Role of stress on the parabolic kinetic constant for dry silicon oxidation

A. Fargeix , G. Ghibaudo

Journal of Applied Physics, 1984, 56 (2), pp.589-591. ⟨10.1063/1.333924⟩

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A revised analysis of dry oxidation of silicon

A. Fargeix , G. Ghibaudo , G. Kamarinos

Journal of Applied Physics, 1983, 54 (5), pp.2878-2880. ⟨10.1063/1.332286⟩

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A revised analysis of dry oxidation of silicon

A. Fargeix , G. Ghibaudo

Journal of Applied Physics, 1983, 54 (5), pp.2878-2880. ⟨10.1063/1.332286⟩

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Evidence of mobility edge in degenerate SOS films

G. Ghibaudo , D Tsamakis , C Papatriantafillou , G. Kamarinos , E Rokofillou

Journal of Physics C: Solid State Physics, 1983, 16 (22), pp.4479-4485. ⟨10.1088/0022-3719/16/22/020⟩

Article dans une revue istex hal-02114082v1
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Analyse des propriétés de transport électrique dans le silicium sur isolant — Utilisation du pouvoir thermoélectrique

G. Ghibaudo , G. Kamarinos

Revue de Physique Appliquée, 1982, 17 (3), pp.133-143. ⟨10.1051/rphysap:01982001703013300⟩

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Thermopower of a quasi-two-dimensional electron gas

G. Ghibaudo , G. Kamarinos

physica status solidi (b), 1982, 114 (2), pp.K105-K110. ⟨10.1002/pssb.2221140259⟩

Article dans une revue istex hal-02114075v1
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Cryogenic electronics for quantum computing ICs: what can bring FDSOI

Mikaël Cassé , Bruna Cardoso Paz , Flavio Bergamaschi , Gérard Ghibaudo , Francis Balestra et al.

245th ECS Meeting, The Electrochemical Society, May 2023, Boston MA, United States. pp.149, ⟨10.1149/11101.0149ecst⟩

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Experimental Study of Self-Heating Effect in InGaAs HEMTs for Quantum Technologies Down to 10K

F. Serra Di Santa Maria , C. B. Zota , E. Cha , Francis Balestra , Christoforos Theodorou et al.

IEEE International Reliability Physics Symposium (IRPS), Mar 2023, Monterey, United States. ⟨10.1109/IRPS48203.2023.10118294⟩

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Drain Current Variability in 2-levels Stacked Nanowire Gate All Around P-type Field Effect Transistors

Donghyun Kim , Sylvain Barraud , Gérard Ghibaudo , Christoforos Theodorou , Jae Woo Lee

2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), Mar 2023, Seoul, South Korea. pp.1-3, ⟨10.1109/EDTM55494.2023.10103067⟩

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Second Harmonic Generation: Non-Linear Optics for Characterization of Electrical Properties of Dielectric-on-Semiconductor Interfaces

Irina Ionica , D. Damianos , Baydaa Obeid , Anne Kaminski , Danièle Blanc-Pelissier et al.

symposium D02: Dielectrics for Nanosystems 9: Materials Science, Processing, Reliability, and Manufacturing, conference 241st ECS meeting, May 2022, Vancouver (CA), Canada

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Electrical characterization and modeling of FDSOI MOSFETs for Cryo-Electronics

Mikael Casse , Bruna Cardoso Paz , Gérard Ghibaudo , Maud Vinet

Workshop On Low Temperature Electronics, Jun 2022, Matera, Italy. pp.10.1109/WOLTE55422.2022.9882859

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In-depth electrical characterization of deca-nanometer InGaAs MOSFET down to deep cryogenic temperatures

F. Serra Di Santa Maria , Christoforos Theodorou , Francis Balestra , Gérard Ghibaudo , Eunjung Cha et al.

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Frequency dependant gate oxide TDDB model

M. Arabi , X. Federspiel , F. Cacho , M. Rafik , S. Blonkowski et al.

irps 2022 6 IEEE International Reliability Physics Symposium, Mar 2022, Dallas, United States. pp.P25-1-P25-5, ⟨10.1109/IRPS48227.2022.9764503⟩

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FDSOI for cryoCMOS electronics: device characterization towards compact model

Mikael Casse , Bruna Cardoso Paz , Flavio Bergamaschi , Gérard Ghibaudo , Francesco Serra et al.

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The impact of free carriers and surface traps on semiconducting piezoelectric devices

Gustavo Ardila , Andres Jenaro Lopez Garcia , Quang Chieu Bui , Thomas Jalabert , Manojit Pusty et al.

6th International on-line Conference on Nanogenerators and Piezotronics, NGPT 2022, Jun 2022, Sundsvall, Sweden

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Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT

A.G. Viey , W. Vandendaele , M.-A. Jaud , J. Coignus , J. Cluzel et al.

2021 IEEE International Reliability Physics Symposium (IRPS), Mar 2021, Monterey, United States. pp.1-8, ⟨10.1109/IRPS46558.2021.9405221⟩

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Mechanical energy transducers based on semiconducting piezoelectric nanowires

Gustavo Ardila , Andres Jenaro Lopez Garcia , Vincent Consonni , Alessandro Cresti , G. Ghibaudo et al.

MRM2021 Materials Research Meeting, Dec 2021, Yokohama ( virtual ), Japan

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Low temperature behavior of FD-SOI MOSFETs from micro- to nano-meter channel lengths

F. Serra Di Santa Maria , Christoforos Theodorou , Xavier Mescot , Francis Balestra , Gérard Ghibaudo et al.

14th Workshop on Low Temperature Electronics ( WOLTE 2021), Apr 2021, Virtual, Italy. ⟨10.1109/WOLTE49037.2021.9555451⟩

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Comprehensive Kubo-Greenwood modelling of FDSOI MOS devices down to deep cryogenic temperatures

F. Serra Di Santa Maria , L. Contamin , M. Cassé , Christoforos Theodorou , Francis Balestra et al.

2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS), Sep 2021, Caen, France. ⟨10.1109/EuroSOI-ULIS53016.2021.9560694⟩

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“Pinch to Detect”: A Method to Increase the Number of Detectable RTN Traps in Nano-scale MOSFETs

Angeliki Tataridou , Gerard Ghibaudo , Christoforos Theodorou

2021 IEEE International Reliability Physics Symposium (IRPS), Mar 2021, Monterey, United States. ⟨10.1109/IRPS46558.2021.9405102⟩

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Characterization and Lambert-W Function based modeling of FDSOI five-gate qubit MOS devices down to cryogenic temperatures

Edoardo Catapano , Agostino Apra , Mikael Casse , Fréd Gaillard , Silvano de Franceschi et al.

EUROSOI-ULIS - 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Sep 2021, Caen, France. ⟨10.1109/EuroSOI-ULIS53016.2021.9560671⟩

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Reliable method for low field temperature dependent mobility extraction at Al2O3/GaN interface

B. Rrustemi , A. Viey , M.-A. Jaud , F. Triozon , W. Vandendaele et al.

ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC), Sep 2021, Grenoble, France. pp.295-298, ⟨10.1109/ESSDERC53440.2021.9631766⟩

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VERILOR: A Verilog-A Model of Lorentzian Spectra for Simulating Trap-related Noise in CMOS Circuits

Angeliki Tataridou , Gérard Ghibaudo , Christoforos Theodorou

ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC), Sep 2021, Grenoble, France. pp.247-250, ⟨10.1109/ESSDERC53440.2021.9631802⟩

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Carbon-related pBTI degradation mechanisms in GaN-on-Si E-mode MOSc-HEMT

A. Viey , W. Vandendaele , M.-A. Jaud , L. Gerrer , X. Garros et al.

2020 IEEE International Electron Devices Meeting (IEDM), Dec 2020, San Francisco, United States. pp.23.6.1-23.6.4, ⟨10.1109/IEDM13553.2020.9371938⟩

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Parasitic capacitance analysis in short channel GaN MIS-HEMTs

R. Kom Kammeugne , C. Leroux , T. Mota Frutuoso , J. Cluzel , L. Vauche et al.

ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC), Sep 2021, Grenoble, France. pp.299-302, ⟨10.1109/ESSDERC53440.2021.9631820⟩

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Thorough investigation of low frequency noise mechanisms in AlGaN/GaN and Al$_2$O$_3$/GaN HEMTs

R. Kom Kammeugne , Christoforos Theodorou , C. Leroux , Xavier Mescot , L. Vauche et al.

IEDM2021 - IEEE International Electron Devices Meeting, Dec 2021, San Francisco, United States. pp.39.4.1-39.4.4, ⟨10.1109/IEDM19574.2021.9720522⟩

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Integrated Variability Measurements of 28 nm FDSOI MOSFETs down to 4.2 K for Cryogenic CMOS Applications

Bruna Cardoso Paz , Loick Le Guevel , Mikael Casse , Gerard Billiot , Gaël Pillonnet et al.

2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS), May 2020, Edinburgh, United Kingdom. ⟨10.1109/ICMTS48187.2020.9107906⟩

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Influence of series resistance on the experimental extraction of FinFET noise parameters

Angeliki Tataridou , Gérard Ghibaudo , Christoforos Theodorou

2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS), May 2020, Edinburgh, United Kingdom. pp.1-4, ⟨10.1109/ICMTS48187.2020.9107908⟩

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RF Performance of a Fully Integrated 3D Sequential Technology

X. Garros , J. Lacord , K. Triantopoulos , F. Andrieu , Gérard Ghibaudo et al.

2019 IEEE International Electron Devices Meeting (IEDM), Dec 2019, San Francisco, United States. pp.25.1.1-25.1.4, ⟨10.1109/IEDM19573.2019.8993512⟩

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Low temperature high voltage analog devices in a 3D sequential integration

Camila Cavalcante , X. Garros , P. Batude , A. Tataridou , J. Lacord et al.

2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Aug 2020, Hsinchu, Taiwan. pp.155-156, ⟨10.1109/VLSI-TSA48913.2020.9203691⟩

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Variability evaluation of 28nm FD-SOI technology at cryogenic temperatures down to 100mK for quantum computing

B. Cardoso Paz , L. Le Guevel , M. Casse , G. Billiot , G. Pillonnet et al.

2020 IEEE Symposium on VLSI Technology, Jun 2020, Honolulu, United States. ⟨10.1109/VLSITechnology18217.2020.9265034⟩

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28nm FDSOI CMOS Technology (FEOL and BEOL) Thermal Stability for 3D Sequential Integration: Yield and Reliability Analysis

C. Cavalcante , C. Fenouillet-Beranger , P. Batude , X. Garros , X. Federspiel et al.

2020 IEEE Symposium on VLSI Technology, Jun 2020, Honolulu, United States. pp.1-2, ⟨10.1109/VLSITechnology18217.2020.9265075⟩

Communication dans un congrès cea-04521647v1

All-Operation-Regime Characterization and Modeling of Drain Current Variability in Junctionless and Inversion-Mode FDSOI Transistors

D. Bosch , J. Colinge , Gérard Ghibaudo , X. Garros , S. Barraud et al.

2020 IEEE Symposium on VLSI Technology, Jun 2020, Honolulu, United States. pp.1-2, ⟨10.1109/VLSITechnology18217.2020.9265036⟩

Communication dans un congrès cea-04905872v1

Poisson-Schrödinger simulation of inversion charge in FDSOI MOSFET down to 0K - Towards compact modeling for cryo CMOS application

M. Aouad , S. Martinie , F. Triozon , T. Poiroux , M. Vinet et al.

EUROSOI-ULIS 2020 - Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Sep 2020, Caen, France. pp.1-4, ⟨10.1109/EUROSOI-ULIS49407.2020.9365297⟩

Communication dans un congrès hal-04821261v1

Investigation of nBTI degradation on GaN-on-Si E-mode MOSc-HEMT

A.G. Viey , W. Vandendaele , M.-A. Jaud , J. Cluzel , J.-P. Barnes et al.

2019 IEEE International Electron Devices Meeting (IEDM), Dec 2019, San Francisco, United States. pp.4.3.1-4.3.4, ⟨10.1109/IEDM19573.2019.8993588⟩

Communication dans un congrès cea-04777991v1

Y-unction based methodology for accurate statistical extraction of HEMT device parameters for GaN technology

R. Kom Kammeugne , Romeo Kom Kammeugne , Charles Leroux , Jacques Cluzel , Laura Vauche et al.

EUROSOI-ULIS 2020 - Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Sep 2020, Caen, France. pp.1-4, ⟨10.1109/EUROSOI-ULIS49407.2020.9365637⟩

Communication dans un congrès cea-03167130v1

Reliability and Variability of 1S1R OxRAM-OTS for High Density Crossbar Integration

D. Alfaro Robayo , D. Deleruyelle , E. Vianello , N. Castellani , L. Ciampolini et al.

2019 IEEE International Electron Devices Meeting (IEDM), Dec 2019, San Francisco, United States. pp.35.3.1-35.3.4, ⟨10.1109/IEDM19573.2019.8993439⟩

Communication dans un congrès hal-03029486v1

Characterization Methodology and Physical Compact Modeling of in-Wafer Global and Local Variability

Krishna Pradeep , Thierry Poiroux , Patrick Scheer , Andre Juge , Gilles Gouget et al.

2018 IEEE International Electron Devices Meeting (IEDM), Dec 2018, San Francisco, United States. pp.17.1.1-17.1.4, ⟨10.1109/IEDM.2018.8614589⟩

Communication dans un congrès hal-02050415v1
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Inter-tier Dynamic Coupling and RF Crosstalk in 3D Sequential Integration

Petros Sideris , J. Lugo-Alvarez , P. Batude , L. Brunet , P. Acosta-Alba et al.

2019 IEEE International Electron Devices Meeting (IEDM), Dec 2019, San Francisco, United States. pp.3.4.1-3.4.4, ⟨10.1109/IEDM19573.2019.8993493⟩

Communication dans un congrès hal-02969757v1

Influence of Gate Length on pBTI in GaN-on-Si E-Mode MOSc-HEMT

A.G. Viey , W. Vandendaele , Ma Jaud , R. Gwoziecki , A. Torres et al.

2019 IEEE International Reliability Physics Symposium (IRPS), Mar 2019, Monterey, United States. pp.1-6, ⟨10.1109/IRPS.2019.8720554⟩

Communication dans un congrès cea-04797646v1

Integration of OTS based back-end selector with HfO 2 OxRAM for crossbar arrays

D. Alfaro Robayo , G. Sassine , L. Grenouillet , C. Carabasse , T. Martin et al.

2019 IEEE 11th International Memory Workshop (IMW), May 2019, Monterey, United States. pp.1-4, ⟨10.1109/IMW.2019.8739746⟩

Communication dans un congrès cea-04797602v1

Statistical Characterization and Modelling of Gate-Induced Drain Leakage Variability in Advanced FDSOI Devices

T. Karatsori , C. Cavalcante , J. Lacord , P. Batude , Christoforos Theodorou et al.

2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2019, San Jose, United States. pp.1-2, ⟨10.1109/S3S46989.2019.9320739⟩

Communication dans un congrès hal-03260930v1

Potential of semiconducting nanonets for the 3D CMOS integration of biosensors

Mireille Mouis , Maxime Legallais , Thibauld Cazimajou , Fanny Morisot , T.T.T. Nguyên et al.

J2N : journées nationales des nanofils semiconducteurs, Nov 2019, Lyon, France

Communication dans un congrès hal-04756792v1

Potential of nanonets for the 3D integration of biosensors on CMOS (invited)

Mireille Mouis , Maxime Legallais , Thibauld Cazimajou , Fanny Morisot , Thuy Thi Thu Nguyen et al.

Journées Nationales Nanofils Semiconducteurs Journées Nationales Nanofils Semiconducteurs, Lyon, 13-15 Nov. 2019, Nov 2019, Lyon, France

Communication dans un congrès hal-02400730v1

Series Resistance Effects on the Back-Gate Biased Operation of Junctionless Transistors (poster)

Daeyoung Jeon , So Jeong Park , Mireille Mouis , Sylvain Barraud , Kim Gyu-Tae et al.

2019 Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS), Apr 2019, Grenoble, France. Actes pp. 36-37, ⟨10.1109/EUROSOI-ULIS45800.2019.9041921⟩

Communication dans un congrès hal-02400587v1

Development of X-ray Photoelectron Spectroscopy under bias and its application to determine band-energies and dipoles in the HKMG stack

Pushpendra Kumar , Charles Leroux , Florian Domengie , Eugenie Martinez , Virginie Loup et al.

2018 IEEE International Electron Devices Meeting (IEDM), Dec 2018, San Francisco, United States. pp.17.6.1-17.6.4, ⟨10.1109/IEDM.2018.8614554⟩

Communication dans un congrès cea-04805567v1

Effect of wet treatments on the electrical properties of Al2O3/GeSn MOS capacitors

B. Salem , M. A. Mahjoub , T. Haffner , Y. Guerfi , S. Labau et al.

EMRS Fall Meeting, 2019, EMRS Fall Meeting 2019 (Varsovie, Pologne), Poland

Communication dans un congrès hal-02332929v1
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Low-frequency Noise and Random Telegraph Noise in Nanoscale Devices: Modeling and Impact on Circuit Operation

Christoforos Theodorou , Gérard Ghibaudo

25th International Conference on Noise and Fluctuations ICNF 2019, EPFL, Jun 2019, Grenoble, France

Communication dans un congrès hal-02969721v1

Low Temperature Electrical Characteristics of Si Nanonet Field-Effect Transistors

Thibauld Cazimajou , Thuy Thi Thu Nguyen , Maxime Legallais , Mireille Mouis , Céline Ternon et al.

2019 Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS), Apr 2019, Grenoble, France. Actes pp. 132-133

Communication dans un congrès hal-02400540v1

On the influence of gate length on pBTI in GaN-on-Si E-mode MOSc-HEMT

Abygael Viey , William Vandendaele , Marie-Anne Jaud , Romain Gwoziecki , Alphonse Torres et al.

2019 IEEE International Reliability Physics Symposium (IRPS), Mar 2019, Monterey, United States. pp.7A.1 session WB GaN

Communication dans un congrès hal-02052343v1
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A 4-Terminal Method for Oxide and Semiconductor Trap Characterization in FDSOI MOSFETs

Hung Chi Han , Christoforos Theodorou , Gérard Ghibaudo

25th International Conference on Noise and Fluctuations ICNF 2019, EPFL, Jun 2019, Neuchatel, Switzerland

Communication dans un congrès hal-02963338v1

Static and Low Frequency Noise Characterization of InGaAs MOSFETs and FinFETs on Insulator

T. Karatsori , K. Bennamane , C. Theodorou , L. Czornomaz , J. Fompeyrine et al.

2018 ESSDERC - 48th European Solid-State Device Research Conference (ESSDERC), Sep 2018, Dresden, Germany. pp.166-169, ⟨10.1109/ESSDERC.2018.8486851⟩

Communication dans un congrès hal-02002326v1

Analysis and modelling of wafer level process variability in advanced FD-SOI devices using split C-V and gate current data

Krishna Pradeep , Theano Karatsori , Thierry Poiroux , Andre Juge , Patrick Scheer et al.

Modeling of Systems and Parameter Extraction Working (MOS-AK), ESSDERC/ESSCIRC, Sep 2018, Dresden, Germany

Communication dans un congrès hal-02051931v1

Characterization and modelling of nanonet-based field-effect transistors in the presence of percolating effects

Thibauld Cazimajou , Maxime Legallais , Thuy Thi Thu Nguyen , Mireille Mouis , Céline Ternon et al.

Nanoelectronics and Smart Systems Technologies for Future Applications (Joint SiNano-NEREID-Nanonets2Sense-Convergence Workshop at ESSDERC 2018), Sep 2018, Dresden, Germany

Communication dans un congrès hal-02401189v1
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Doping profile extraction in thin SOI films: application to A2RAM

F Tcheme Wakam , J. Lacord , M. Bawedin , S. Martinie , S. Cristoloveanu et al.

2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Mar 2018, Granada, Spain. pp.1-4, ⟨10.1109/ULIS.2018.8354339⟩

Communication dans un congrès cea-02270895v1

Performance & reliability of 3D architectures (πfet, Finfet, Ωfet)

A. Laurent , X. Garros , S. Barraud , J. Pelloux-Prayer , M. Cassé et al.

2018 IEEE International Reliability Physics Symposium (IRPS), Mar 2018, Burlingame, United States. pp.6F.3-1-6F.3-6, ⟨10.1109/IRPS.2018.8353647⟩

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Detailed analysis of frequency-dependent impedance in pseudo-MOSFET on thin SOI film

S. Sato , Y. Omura , G. Ghibaudo , L. Benea , S. Cristoloveanu

2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Mar 2018, Granada, Spain. pp.221-224, ⟨10.1109/ULIS.2018.8354774⟩

Communication dans un congrès hal-02007662v1

A self-Contained Defect-Aware Module for Realistic Simulations of LFN, RTN and Time-Dependent Variability in FD-SOI Devices and Circuits

Christoforos Theodorou , Gérard Ghibaudo

2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2018, San Francisco, United States. pp.20.3, ⟨10.1109/S3S.2018.8640191⟩

Communication dans un congrès hal-02010259v1

Analytical expression of top surface charge sensitivity in fully depleted semiconductor on insulator MOS transistor

Gérard Ghibaudo , Georges Pananakakis

International Workshop on Semi-conducting Nanometerials for Health, Environment and Security Applications, Nov 2018, Grenoble, France

Communication dans un congrès hal-02052299v1

Low-frequency noise in surface-treated AlGaN/GaN HFETs

Ki-Sik Im , Jun-Hyeok Lee , Jung-Hee Lee , Christoforos Theodorou , Gérard Ghibaudo et al.

2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Mar 2018, Granada, Spain. pp.77-80, ⟨10.1109/ULIS.2018.8354738⟩

Communication dans un congrès hal-02002314v1

Impact of low-temperature CoolcubeTM process on the performance of FDSOI Tunnel FETs

C. Diaz Llorente , Jean-Pierre Colinge , Maud Vinet , Christoforos Theodorou , Sorin Cristoloveanu, et al.

2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2018, San Francisco, United States. pp.5.4, ⟨10.1109/S3S.2018.8640190⟩

Communication dans un congrès hal-02010233v1

Performance and Reliability of a Fully Integrated 3D Sequential Technology

A. Tsiara , X. Garros , L. Brunet , P. Batude , C. Fenouillet-Beranger et al.

2018 IEEE Symposium on VLSI Technology, Jun 2018, Honolulu, United States. pp.75-76, ⟨10.1109/VLSIT.2018.8510625⟩

Communication dans un congrès hal-02050384v1

Stability and in depth characterization of low-voltage organic thin film transistors based on low-k/high-k bilayer dielectric

Alexandre Gaïtis , Micaël Charbonneau , Gérard Ghibaudo , R. Coppard , Christophe Serbutoviez

Innovations in large-Area Electronics Conference (InnoLAE), Jan 2018, Hinxton, United Kingdom

Communication dans un congrès hal-02051882v1

Experimental and theoretical investigation of RRAM endurance statistical behavior

D. Alfaro Robayo , G. Sassine , Quentin Rafhay , Gérard Ghibaudo , Gabriel Molas et al.

49th IEEE Semiconductor Interface Specialists Conference (SISC), IEEE, Dec 2018, San Diego, United States. pp.13.2

Communication dans un congrès hal-02052290v1

Innovative tunnel FET architectures

Carlos Diaz Llorente , Sébastien Martinie , Sorin Cristoloveanu , Jean-Pierre Colinge , Cyrille Le Royer et al.

2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Mar 2018, Granada, Spain. pp.25-28, ⟨10.1109/ULIS.2018.8354725⟩

Communication dans un congrès hal-02007301v1

Finite element simulation of 2D percolating silicon-nanonet field-effect transistor

T. Cazimajou , M. Mouis , G. Ghibaudo

2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Mar 2018, Granada, Spain. pp.165-168, ⟨10.1109/ULIS.2018.8354760⟩

Communication dans un congrès hal-02016613v1

Analysis of Gate Current Wafer Level Variability in Advanced FD-SOI MOSFETs

Krishna Pradeep , T. Karatsori , T. Poiroux , A. Juge , P. Scheer et al.

2018 ESSDERC - 48th European Solid-State Device Research Conference (ESSDERC), Sep 2018, Dresden, Germany. pp.242-245, ⟨10.1109/ESSDERC.2018.8486847⟩

Communication dans un congrès hal-02065295v1

Impact of CMOS TiN Metal Gate Process on Microstructure and Its Correlation with Electrical Properties

Pushpendra Kumar , Florian Domengie , Charles Leroux , Patrice Gergaud , Gérard Ghibaudo

2018 MRS Fall Meeting & Exhibit: Symposium PM07—Plasma-Based Synthesis, Processing and Characterization of Novel Materials for Advanced Applications, M. Sankaran, D. Mariotti, T. Nozaki, C.C. Wu, Nov 2018, Boston, United States

Communication dans un congrès hal-02052429v1

Investigation of the role of back barrier depth and conductivity on the dynamic Ron and substrate ramping behavior of GaN Schottky diodes on silicon substrate

Thomas Lorin , W. Vandendaele , Romain Gwoziecki , C. Gillot , J. Biscarrat et al.

20th European Conference on Power Electronics and Applications (EPE'18 ECCE Europe), Sep 2018, Riga, Latvia

Communication dans un congrès hal-02050406v1

New insights on device level TDDB at GHz speed in advanced CMOS nodes

M. Arabi , X. Federspiel , F. Cacho , M. Rafik , A. Nguyen et al.

2018 IEEE International Integrated Reliability Workshop, Oct 2018, Fallen Leaf Lake, United States

Communication dans un congrès hal-02052398v1

Statistical analysis of CBRAM endurance

D. Alfaro Robayo , C. Nail , G. Sassine , J. F Nodin , M. C. Bernard et al.

2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), Apr 2018, Hsinchu, Taiwan. pp.115-116, ⟨10.1109/VLSI-TSA.2018.8403856⟩

Communication dans un congrès hal-02050364v1

Systematic evaluation of the split C-V based parameter extraction methodologies for 28 nm FD-SOI

Krishna Pradeep , Gilles Gouget , Thierry Poiroux , Patrick Scheer , Andre Juge et al.

2017 International Conference of Microelectronic Test Structures (ICMTS), Mar 2017, Grenoble, France. pp.59-63, ⟨10.1109/ICMTS.2017.7954267⟩

Communication dans un congrès hal-02050209v1

Effect of La and Al addition used for threshold voltage shift on the BTI reliability of HfON-based FDSOI MOSFETs

Pushpendra Kumar , Charles Leroux , Alain Toffoli , Giovanni Romano , Xavier Garros et al.

2017 IEEE International Reliability Physics Symposium (IRPS), Apr 2017, Monterey, United States. pp.2B-2.1-2B-2.7, ⟨10.1109/IRPS.2017.7936258⟩

Communication dans un congrès hal-02050203v1

Sensitivity analysis of C-V global variability for 28 nm FD-SOI

Krishna Pradeep , Thierry Poiroux , Patrick Scheer , Gilles Gouget , Andre Juge et al.

EUROSOI-ULIS - 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Apr 2017, Athens, Greece. pp.132-135, ⟨10.1109/ULIS.2017.7962582⟩

Communication dans un congrès hal-02050213v1

Self-heating assessment and cold current extraction in FDSOI MOSFETs

K. Triantopoulos , M. Cassé , L. Brunet , P. Batude , C. Fenouillet-Beranger et al.

2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2017, Burlingame, United States. pp.6.4, ⟨10.1109/S3S.2017.8309239⟩

Communication dans un congrès hal-02050233v1

High temperature investigation of electron transport properties in 2DEG AlGaN/AlN/GaN MIS-HEMT wafer adapted from four-point probe technique

Iliass Nifa , Charles Leroux , Alphonse Torres , Matthew Charles , Jacques Cluzel et al.

20th Conference of Insulating Films on Semiconductors (INFOS 2017), Jun 2017, Potsdam, Germany

Communication dans un congrès hal-02009848v1

Electrical characterization of percolating silicon nanonet FETs for sensing applications

T. Cazimajou , M. Legallais , M. Mouis , C. Ternon , B. Salem et al.

2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Apr 2017, Athens, Greece. pp.23-26, ⟨10.1109/ULIS.2017.7962591⟩

Communication dans un congrès hal-01929333v1

First SOI Tunnel FETs with low-temperature process

C. Diaz Llorente , C. Le Royer , C-M. Lu , P. Batude , C. Fenouillet-Beranger et al.

2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Apr 2017, Athens, Greece. pp.9-12, ⟨10.1109/ULIS.2017.7962579⟩

Communication dans un congrès hal-02007188v1
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Precise EOT regrowth extraction enabling performance analysis of Low Temperature Extension First devices

Jessy Micout , Quentin Rafhay , Xavier Garros , Mikael Cassé , Jean Coignus et al.

2017 ESSDERC - 47th European Solid-State Device Research Conference, Sep 2017, Leuven, Belgium. pp.144-147, ⟨10.1109/ESSDERC.2017.8066612⟩

Communication dans un congrès cea-01525266v1

Thermal effects in 3D sequential technology

K. Triantopoulos , M. Cassé , L. Brunet , P. Batude , C. Fenouillet-Beranger et al.

2017 IEEE International Electron Devices Meeting (IEDM), Dec 2017, San Francisco, United States. pp.7.6.1-7.6.4, ⟨10.1109/IEDM.2017.8268348⟩

Communication dans un congrès hal-02050229v1

Ultra-low power 1T-DRAM in FDSOI technology

H. El Dirani , M.S. Parihar , J. Lacord , S. Martinie , J-Ch. Barbe et al.

20th International Conference on Insulating Films on Semiconductors (INFOS 2017), Jun 2017, Potsdam, Germany

Communication dans un congrès hal-02071682v1

(Invited) Dipoles in Gate-Stack/FDSOI Structure

Gilles Reimbold , Charles Leroux , Carlos Suarez Segovia , Pushpendra Kumar , Xavier Garros et al.

232nd ECS Meeting: 15th Symposium on Seminconductors, Dielectrics and Metals for Nanoelectronics, D. Misra, S. De Gendt, M. Houssa K. Kita and D. Landheer, Oct 2017, Washington DC, United States

Communication dans un congrès hal-02051924v1

High performance low temperature FinFET with DSPER, gate last and Self Aligned Contact for 3D sequential mtegration

J. Micout , V. Lapras , P. Batude , C. Fenouillet-Beranger , J. Lacord et al.

2017 IEEE International Electron Devices Meeting (IEDM), Dec 2017, San Francisco, United States. pp.32.2.1-32.2.4, ⟨10.1109/IEDM.2017.8268484⟩

Communication dans un congrès hal-01959097v1

New insight on the geometry dependence of BTI in 3D technologies based on experiments and modeling

Xavier Garros , Antoine Laurent , Sylvain Barraud , J. Lacord , Olivier Faynot et al.

2017 IEEE Symposium on VLSI Technology, Jun 2017, Kyoto, Japan. pp.T134-T135, ⟨10.23919/VLSIT.2017.7998152⟩

Communication dans un congrès hal-02050216v1

A microsecond time resolved current collapse test setup dedicated to GaN-based Schottky diode characterization

T. Lorin , W. van den Daele , C. Gillot , M. Charles , J. Biscarrat et al.

2017 International Conference of Microelectronic Test Structures (ICMTS), Mar 2017, Grenoble, France. pp.150-153, ⟨10.1109/ICMTS.2017.7954286⟩

Communication dans un congrès hal-02050207v1

Comparison of RTN and TDDS methods for trap extraction in trigate nanowires

A. Tsiara , X. Garros , A. Vernhet , S. Barraud , O. Faynot et al.

2017 IEEE International Reliability Physics Symposium (IRPS), Apr 2017, Monterey, United States. pp.3E-4.1-3E-4.6, ⟨10.1109/IRPS.2017.7936297⟩

Communication dans un congrès hal-02050205v1

Towards 500°C SPER activated devices for 3D sequential integration

J. Micout , B. Sklenard , P. Batude , Rémy Berthelon , Quentin Rafhay et al.

2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2017, Burlingame, CA, United States. pp.24.3, ⟨10.1109/S3S.2017.8309220⟩

Communication dans un congrès hal-01959113v1

Low temperature measurements on organic thin film transistors

Clara Haddad , Stéphanie Jacob , Micaël Charbonneau , Xavier Mescot , Amélie Revaux et al.

2017 E-MRS Spring Meeting: Symposium L:New materials for organic electronics: from synthesis to processing, characterization and device physics, C. Muller, E. Von Hauf, M. Caironi, M. Sommer, May 2017, Strasbourg, France

Communication dans un congrès hal-02072323v1

Impact of strain on access resistance in planar and nanowire CMOS devices

Rémy Berthelon , F. Andneu , F. Triozon , M. Cassé , L. Bourdet et al.

2017 IEEE Symposium on VLSI Technology, Jun 2017, Kyoto, Japan. pp.T224-T225, ⟨10.23919/VLSIT.2017.7998180⟩

Communication dans un congrès hal-02050220v1

Assessment of GeSn surface wet treatment for prior to Atomic Layer Deposition of High-k Dielectrics

M.A. Mahjoub , T. Haffner , J. Aubin , J.M. Hartmann , G. Ghibaudo et al.

2017 MRS Fall Meeting & Exhibit: Symposium PM03 : Interfaces and Interface Engineering in Inorganic Materials, Y. Chen, E. Bitzek, M.T. Perez Prado, D. Rowenhorst, Nov 2017, Boston, United States

Communication dans un congrès hal-01929247v1

Reliability analysis on low temperature gate stack process steps for 3D sequential integration

A. Tsiara , X. Garros , C.-M.V. Lu , C. Fenouillet-Beranger , P. Batude et al.

2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2017, Burlingame, United States. pp.24.2, ⟨10.1109/S3S.2017.8309219⟩

Communication dans un congrès hal-02050231v1

Statistical characterization and modeling of drain current local and global variability in 14 nm bulk FinFETs

T. Karatsori , C. Theodorou , R. Lavieville , T. Chiarella , J. Mitard et al.

2017 International Conference of Microelectronic Test Structures (ICMTS), Mar 2017, Grenoble, France. pp.41-45, ⟨10.1109/ICMTS.2017.7954263⟩

Communication dans un congrès hal-02002304v1

Growth and integration of group IV nanowires for Tunnel FET devices

B. Salem , V. Brouzet , P. Periwal , F. Bassani , P. Gentile et al.

Collaborative Conference on Materials Research (CCMR 2017), Jun 2017, Jeju island, South Korea

Communication dans un congrès hal-01891328v1

Novel C-V measurements based method for the extraction of GaN buffer layer residual doping level in HEMT

Iliass Nifa , Charles Leroux , Alphonse Torres , Charles Charles , Gilles Reimbold et al.

2017 International Conference of Microelectronic Test Structures (ICMTS), Mar 2017, Grenoble, France. pp.154-157, ⟨10.1109/ICMTS.2017.7954287⟩

Communication dans un congrès hal-02009829v1

Impact of access resistance on New-Y function methodology for MOSFET parameter extraction in advanced FD-SOI technology

Jean-Baptiste Henry , Antoine Cros , Julien Rosa , Quentin Rafhay , Gérard Ghibaudo

2017 International Conference of Microelectronic Test Structures (ICMTS), Mar 2017, Grenoble, France. pp.68-72, ⟨10.1109/ICMTS.2017.7954269⟩

Communication dans un congrès hal-01959125v1

Static and low frequency noise characterization of ultra-thin body InAs MOSFETs

T.A. Karatsori , M. Pastorek , Christoforos Theodorou , A. Fadjie , Nicolas Wichmann et al.

2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Apr 2017, Athens, Greece. pp.105-108, ⟨10.1109/ULIS.2017.7962613⟩

Communication dans un congrès hal-02050212v1

Statistical low-frequency noise characterization in sub-15 nm Si/SiGe nanowire Trigate pMOSFETs

Christoforos Theodorou , Romain Lavieville , Theano Karatsori , Sylvain Barraud , Charalabos Dimitriadis et al.

2017 International Conference of Microelectronic Test Structures (ICMTS), Mar 2017, Grenoble, France. pp.141-145, ⟨10.1109/ICMTS.2017.7954284⟩

Communication dans un congrès hal-02002297v1

Optimisation of the catalytic system towards well-defined donor-acceptor semiconductor polymers

Theodoros Oproglidis , Theano Karatsori , Sylvain Barraud , Gérard Ghibaudo , Charalabos Dimitriadis

European Congress and Exhibit on Advanced Materials and Processes (EUROMAT 2017), symposium C.11 Processes and Materials for Nanoelectronics, D. Tsoukalas, M. Fanciulli and A. Claverie, Sep 2017, Thessalonique, Greece

Communication dans un congrès hal-02068513v1

Noise-induced dynamic variability in nano-scale CMOS SRAM cells

Christoforos Theodorou , Mouenes Fadlallah , Xavier Garros , Charalabos Dimitriadis , Gérard Ghibaudo

2016 ESSDERC - 46th European Solid-State Device Research Conference, Sep 2016, Lausanne, Switzerland. pp.256-259, ⟨10.1109/ESSDERC.2016.7599634⟩

Communication dans un congrès hal-02002272v1

Impact of low thermal processes on reliability of HK/MG stacks

Artemisia Tsiara , Xavier Garros , C-M. V. Lu , Claire Fenouillet-Beranger , Gérard Ghibaudo

19th Workshop on Dielectrics in Microelectronics (WoDIM), Jun 2016, Catania, Italy

Communication dans un congrès hal-02051859v1

RAPIDO Testing of Assisted Write and Read operations for Ultra-Low Power SRAMs

Joseph Nguyen , D. Turgis , David Bonciani , Brice Lhomme , Yann Carminati et al.

W07 International Workshop on Emerging Memory Solutions, Mar 2016, Dresden, Germany

Communication dans un congrès hal-02051768v1

Doping Solutions for Advanced CMOS high-k / metal Gate Engineering

Gilles Reimbold , C. Suarez-Segovia , Charles Leroux , Florian Domengie , Philippe Blaise et al.

BIT’s 2nd Annual World Congress of Smart Materials-2016, Mar 2016, Singapore, Singapore

Communication dans un congrès hal-02051782v1

Characterization and modeling of NBTI permanent and recoverable components variability

D. Nouguier , G. Ghibaudo , X. Federspiel , M. Rafik , D. Roy

2016 IEEE International Reliability Physics Symposium (IRPS), Apr 2016, Pasadena, United States. pp.XT-08-1-XT-08-6, ⟨10.1109/IRPS.2016.7574650⟩

Communication dans un congrès hal-02050196v1

Hot carrier degradation in nanowire transistors: Physical mechanisms, width dependence and impact of Self-Heating

A. Laurent , X. Garros , S. Barraud , G. Mariniello , G. Reimbold et al.

2016 IEEE Symposium on VLSI Technology, Jun 2016, Honolulu, United States. pp.39-40, ⟨10.1109/VLSIT.2016.7573374⟩

Communication dans un congrès hal-02050194v1

High performance CMOS FDSOI devices activated at low temperature

L. Pasini , P. Batude , J. Lacord , M. Cassé , B. Mathieu et al.

2016 IEEE Symposium on VLSI Technology, Jun 2016, Honolulu, United States. ⟨10.1109/VLSIT.2016.7573407⟩

Communication dans un congrès hal-01730659v1

Improved analysis of NBTI relaxation behavior based on fast I–V measurement

D. Nouguier , C. Ndiaye , G. Ghibaudo , X. Federspiel , M. Rafik et al.

2016 IEEE International Integrated Reliability Workshop (IIRW), Oct 2016, South Lake Tahoe, United States. pp.83-86, ⟨10.1109/IIRW.2016.7904908⟩

Communication dans un congrès hal-02050198v1

High temperature investigation of electron transport properties in 2DEG AlGaN/AlN/GaN MIS-HEMT

Iliass Nifa , Charles Leroux , Alphonse Torres , Matthew Charles , Denis Blachier et al.

19th Workshop on Dielectrics in Microelectronics (WoDIM), Jun 2016, Catania, Italy

Communication dans un congrès hal-02009860v1

Low Temperature Characterization of Hole Mobility in Sub-14nm Gate Length Si 0.7 Ge 0.3 Tri-Gate pMOSFETs

R. Lavieville , C. Le Royer , S. Barraud , G. Ghibaudo

12th International Workshop on Low Temperature Electronics (WOLTE-12), Sep 2016, Tempe, United States

Communication dans un congrès hal-02072793v1

New access resistance extraction methodology for 14nm FD-SOI technology

Jean-Baptiste Henry , Antoine Cros , Julien Rosa , Quentin Rafhay , Gérard Ghibaudo

2016 International Conference on Microelectronic Test Structures (ICMTS), Mar 2016, Yokohama, Japan. pp.70-75, ⟨10.1109/ICMTS.2016.7476177⟩

Communication dans un congrès hal-01959130v1

Drain current local variability from linear to saturation region in 28nm bulk NMOSFETs

T. Karatsori , C. Theodorou , S. Haendler , C. Dimitriadis , G. Ghibaudo

2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Jan 2016, Vienna, Austria. pp.92-95, ⟨10.1109/ULIS.2016.7440060⟩

Communication dans un congrès hal-02002291v1

MBE-grown oxides-based resistive switching memristive devices

Marie Minvielle , N. Najjari , G. Sassine , C. Botella , Gérard Ghibaudo et al.

19th Workshop on Dielectrics in Microelectronics (WoDIM), Jun 2016, Catania, Italy

Communication dans un congrès hal-02051846v1

Challenges in electrical characterization of nano devices

Gérard Ghibaudo

NEREID Domain Workshop: Task "Nanoscale FETs", F. Balestra and Anda Mocuta, Sinano Summer School 2016, Oct 2016, Bertinoro, Italy

Communication dans un congrès hal-02078235v1

Vertical CBRAM (V-CBRAM): From Experimental Data to Design Perspectives

G. Piccolboni , M. Parise , G. Molas , A. Levisse , Jean-Michel Portal et al.

2016 IEEE 8th International Memory Workshop (IMW), May 2016, Paris, France. ⟨10.1109/IMW.2016.7495296⟩

Communication dans un congrès hal-01451884v1

Robust EOT and effective work function extraction for 14 nm node FDSOI technology

B. Mohamad , C. Leroux , D. Rideau , M. Haond , G. Reimbold et al.

2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Jan 2016, Vienna, Austria. pp.135-138, ⟨10.1109/ULIS.2016.7440071⟩

Communication dans un congrès hal-02050084v1

Hot carrier stress: Aging modeling and analysis of defect location

G. Torrente , X. Federspiel , D. Rideau , F. Monsieur , C. Tavernier et al.

2016 IEEE International Reliability Physics Symposium (IRPS), Apr 2016, Pasadena, United States. pp.5A-4-1-5A-4-6, ⟨10.1109/IRPS.2016.7574546⟩

Communication dans un congrès hal-02050195v1

RAPIDO Testing and Modeling of Assisted Write and Read Operations for SRAMs

Joseph Nguyen , David Turgis , David Bonciani , Brice Lhomme , Yann Carminati et al.

2016 IEEE 25th North Atlantic Test Workshop (NATW), May 2016, Providence, United States. pp.28-33, ⟨10.1109/NATW.2016.14⟩

Communication dans un congrès hal-02050193v1

Understanding RRAM endurance, retention and window margin trade-off using experimental results and simulations

C. Nail , G. Molas , P. Blaise , G. Piccolboni , B. Sklenard et al.

2016 IEEE International Electron Devices Meeting (IEDM), Dec 2016, San Francisco, United States. pp.4.5.1-4.5.4, ⟨10.1109/IEDM.2016.7838346⟩

Communication dans un congrès hal-01882789v1

Statistical characterization of drain current local and global variability in sub 15nm Si/SiGe Trigate pMOSFETs

R. Lavieville , T. Karatsori , C. Theodorou , S. Barraud , C. Dimitriadis et al.

2016 ESSDERC - 46th European Solid-State Device Research Conference, Sep 2016, Lausanne, Switzerland. pp.142-145, ⟨10.1109/ESSDERC.2016.7599607⟩

Communication dans un congrès hal-02002267v1

Electrical characterization of FDSOI CMOS devices

G. Ghibaudo

2016 ESSDERC - 46th European Solid-State Device Research Conference, Sep 2016, Lausanne, Switzerland. pp.135-141, ⟨10.1109/ESSDERC.2016.7599606⟩

Communication dans un congrès hal-02050197v1

Full front and back split C-V characterization of CMOS devices from 14nm node FDSOI technology

B. Mohamad , G. Ghibaudo , C. Leroux , E. Josse , G. Reimbold

2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2015, Rohnert Park, United States. pp.9a.4, ⟨10.1109/S3S.2015.7333546⟩

Communication dans un congrès hal-02049810v1

Comparison between recoverable and permanent NBTI variability components

D. Nouguier , M. Rafik , X. Federspiel , G. Ghibaudo

2015 IEEE International Integrated Reliability Workshop (IIRW), Oct 2015, South Lake Tahoe, United States. pp.87-90, ⟨10.1109/IIRW.2015.7437074⟩

Communication dans un congrès hal-02049829v1

Investigation of Ta2O5-Based Hybrid OXRAM-CBRAM Including a Ti Layer to Generate Oxygen Vacancies.

G. Piccolboni , A. El Kacimi , G. Molas , A. Marty , R. Gassilloud et al.

EMRS, 2015, 2015, Lille, France

Communication dans un congrès hal-01877911v1

High performance low temperature activated devices and optimization guidelines for 3D VLSI integration of FD, TriGate, FinFET on insulator

L. Pasini , P. Batude , M. Cassé , B. Mathieu , B. Sklenard et al.

2015 IEEE Symposium on VLSI Technology, Jun 2015, Kyoto, Japan. pp.T50-T51, ⟨10.1109/VLSIT.2015.7223699⟩

Communication dans un congrès hal-02049770v1

Effective work function modulation by sacrificial aluminium on HfON-based 14nm devices

Carlos Suarez-Segovia , Charles Leroux , P. Caubet , Florian Domengie , Gilles Reimbold et al.

19th Conference on Insulating Films on semiconductors (INFOS), Jun 2015, Udine, Italy. pp.175-176

Communication dans un congrès hal-02051742v1

Advanced 1T1R test vehicle for RRAM nanosecond-range switching-time resolution and reliability assessment

Clement Nguyen , Carlo Cagli , Elisa Vianello , Alain Persico , Gabriel Molas et al.

2015 IEEE International Integrated Reliability Workshop (IIRW), Oct 2015, South Lake Tahoe, CA, United States. pp.17-20, ⟨10.1109/IIRW.2015.7437059⟩

Communication dans un congrès hal-01959140v1

Hot carrier degradation modeling of short-channel n-FinFETs

I. Messaris , N. Fasarakis , T. Karatsori , A. Tsormpatzoglou , G. Ghibaudo et al.

2015 73rd Annual Device Research Conference (DRC), Jun 2015, Columbus, United States. pp.183-184, ⟨10.1109/DRC.2015.7175617⟩

Communication dans un congrès hal-02049708v1

New LFN and RTN analysis methodology in 28 and 14nm FD-SOI MOSFETs

Christoforos Theodorou , Eleftherios Ioannidis , Sebastien Haendler , Nicolas Planes , Emmanuel Josse et al.

2015 IEEE International Reliability Physics Symposium (IRPS), Apr 2015, Monterey, United States. pp.XT.1.1-XT.1.6, ⟨10.1109/IRPS.2015.7112833⟩

Communication dans un congrès hal-02002118v1

Full front and back gate voltage range method for the parameter extraction of advanced FDSOI CMOS devices

T. Karatsori , C. Theodorou , E. Ioannidis , S. Haendler , E. Josse et al.

2015 73rd Annual Device Research Conference (DRC), Jun 2015, Columbus, United States. pp.115-116, ⟨10.1109/DRC.2015.7175582⟩

Communication dans un congrès hal-02001968v1

Physical understanding of low frequency degradation of NMOS TDDB in High-k metal gate stack-based technology. Implication on lifetime assessment

A. Bezza , M. Rafik , D. Roy , X. Federspiel , P. Mora et al.

2015 IEEE International Reliability Physics Symposium (IRPS), Apr 2015, Monterey, United States. pp.5A.5.1-5A.5.5, ⟨10.1109/IRPS.2015.7112740⟩

Communication dans un congrès hal-02049599v1

Effective work function engineering by sacrificial lanthanum diffusion on HfON-based 14 nm NFET devices

Carlos Suarez-Segovia , Charles Leroux , Florian Domengie , Karen Dabertrand , Vincent Joseph et al.

2015 ESSDERC - 45th European Solid-State Device Research Conference, Sep 2015, Graz, Austria. pp.246-249, ⟨10.1109/ESSDERC.2015.7324760⟩

Communication dans un congrès hal-02049792v1

Analysis of the Resistance Drift of Polycrystalline Phase-Change Materials by Low Frequency Noise Measurementtration

Sarra Souiki Souiki-Figuigui , Véronique Sousa , Gérard Ghibaudo , Gabriele Navarro , Martin Coué et al.

2015 MRS Spring Meeting & Exhibit: Symposium Y: Phase-Change Materials for Data Storage, Cognitive Processing and Photonics Applications, R. Agarwal, H.Y. Cheng, R. Mazzarello, R. Simpson, Apr 2015, San Francisco, United States

Communication dans un congrès cea-02051740v1

Quantum simulation of mobility and current enhancement in sub-14nm strained SiGe FD-pMOSFETs

Marco G. Pala , Barbara de Salvo , P. Morin , Gérard Ghibaudo

GRDi CNRS Mecano: Mechanical Issues for Advanced Electron Devices Workshop, M. Mouis, O. Thomas, E. Zschech, C. Paitel, Jun 2015, Grenoble, France

Communication dans un congrès hal-02068476v1

Influence of epitaxy and gate deposition process on Ron resistance of AlGaN/GaN-on-Si HEMT

J. Lehmann , C. Leroux , M. Charles , A. Torres , E. Morvan et al.

2015 27th IEEE International Symposium on Power Semiconductor Devices & IC's (ISPSD), May 2015, Hong Kong, China. pp.261-264, ⟨10.1109/ISPSD.2015.7123439⟩

Communication dans un congrès hal-02009897v1

Quasi-static capacitance measurements in pseudo-MOSFET configuration for D<inf>it</inf> extraction in SOI wafers

L. Pirro , I. Ionica , X. Mescot , S. Cristoloveanu , G. Ghibaudo et al.

2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Jan 2015, Bologna, Italy. pp.249-252, ⟨10.1109/ULIS.2015.7063820⟩

Communication dans un congrès hal-02004087v1

Fabrication and electrical characterisations of Si/Si1-xGex nanowires Tunnel FET device : impact of Germanium concentration

Virginie Brouzet , Bassem Salem , Priyanka Periwal , Thierry Baron , Franck Bassani et al.

2015 MRS Spring Meeting & Exhibit: Symposium S: Semiconductor Nanowires and Devices for Advanced Applications, J. Arbiol, K. Dick Thelander, M. Filler, A. Fontcuberta, Q. Xiong, Apr 2015, San Francisco, United States

Communication dans un congrès cea-01998244v1

Modeling of OxRAM variability from low to high resistance state using a stochastic trap assisted tunneling-based resistor network

Daniele Garbin , Quentin Rafhay , Elisa Vianello , Simon Jeannot , Philippe Candelier et al.

2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Jan 2015, Bologna, Italy. pp.125, ⟨10.1109/ULIS.2015.7063789⟩

Communication dans un congrès hal-01959186v1

Hot carrier degradation mechanisms of short-channel FDSOI n-MOSFETs

T. Karatsori , C. Theodorou , S. Haendler , N. Planes , G. Ghibaudo et al.

2015 73rd Annual Device Research Conference (DRC), Jun 2015, Columbus, United States. pp.163-164, ⟨10.1109/DRC.2015.7175607⟩

Communication dans un congrès hal-02001979v1

Hot carrier degradation modeling of short-channel n-FinFETs suitable for circuit applications

I. Messaris , T.A. Karatsori , Nikolaos Fasarakis , S. Nikolaidis , Gérard Ghibaudo et al.

4th International Conference on Modern Circuits and Systems Technologies (MOCAST), organized by the FP7 Marie Curie IAPP Project FTK, the Greek National projects NANOTRIM and NANOMOS and the Micro & Nano Scientific Society, May 2015, Thessaloniki, Greece

Communication dans un congrès hal-02051771v1
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Investigation of the potentialities of Vertical Resistive RAM (VRRAM) for neuromorphic applications

G. Piccolboni , G. Molas , M. Portal , R. Coquand , Marc Bocquet et al.

2015 IEEE International Electron Devices Meeting (IEDM), Dec 2015, Washington, United States. pp.17.2.1-17.2.4, ⟨10.1109/IEDM.2015.7409717⟩

Communication dans un congrès hal-01804658v1

On the impact of OxRAM-based synapses variability on convolutional neural networks performance

D. Garbin , E. Vianello , O. Bichler , M. Azzaz , Q. Rafhay et al.

2015 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH´15), Jul 2015, Boston, MA, United States. pp.193-198, ⟨10.1109/NANOARCH.2015.7180611⟩

Communication dans un congrès cea-01839851v1

Low-frequency noise in bare SOI wafers: Experiments and model

Luca Pirro , Irina Ionica , Sorin Cristoloveanu , Gérard Ghibaudo

2015 ESSDERC - 45th European Solid-State Device Research Conference, Sep 2015, Graz, Austria. pp.286-289, ⟨10.1109/ESSDERC.2015.7324770⟩

Communication dans un congrès hal-02004194v1

Fabrication and Electrical Characterization of Si and Si/SiGe Nanowires Tunnel Field-Effect-Transistor

Virginie Brouzet , Bassem Salem , P Periwal. , Guillaume Rosaz , Thierry Baron et al.

4èmes Journées Nationales sur les Technologies Emergentes en Micro-Nanofabrication (JNTE 2015), Nov 2015, Ecully, France

Communication dans un congrès hal-02072677v1

Hot Carrier Stress modeling: From degradation kinetics to trap distribution evolution

G. Torrente , X. Federspiel , D. Rideau , F. Monsieur , C. Tavernier et al.

2015 IEEE International Integrated Reliability Workshop (IIRW), Oct 2015, South Lake Tahoe, United States. pp.134-137, ⟨10.1109/IIRW.2015.7437086⟩

Communication dans un congrès hal-02049860v1

Low frequency noise statistical characterization of 14nm FDSOI technology node

E. Ioannidis , C. Theodorou , S. Haendler , M.-K. Joo , E. Josse et al.

2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Jan 2015, Bologna, Italy. pp.181-184, ⟨10.1109/ULIS.2015.7063803⟩

Communication dans un congrès hal-02002261v1

Optimization of Trigate-On-Insulator MOSFET aspect ratio with MASTAR

Gaspard Hiblot , Quentin Rafhay , Loic Gaben , Gérard Ghibaudo , Frédéric Boeuf

2015 ESSDERC - 45th European Solid-State Device Research Conference, Sep 2015, Graz, Austria. pp.242-245, ⟨10.1109/ESSDERC.2015.7324759⟩

Communication dans un congrès hal-01959154v1

New compact model for performance and process variability assessment in 14nm FDSOI CMOS technology

Y. Denis , F. Monsieur , G. Ghibaudo , J. Mazurier , E. Josse et al.

2015 International Conference on Microelectronic Test Structures (ICMTS), Mar 2015, Tempe, United States. pp.59-64, ⟨10.1109/ICMTS.2015.7106109⟩

Communication dans un congrès hal-02049575v1

CMOS roadmap analysis from the perspective of III-V technology using MASTAR

Gaspard Hiblot , Quentin Rafhay , Gabriel Mugny , Gérard Ghibaudo , Frédéric Boeuf

2015 Silicon Nanoelectronics Workshop (SNW), Jun 2015, Kyoto, Japan. pp.115-116

Communication dans un congrès hal-02049782v1

Development of analytical compact drain current model for28 nm FDSOI MOSFETs

T.A. Karatsori , Andreas Tsormpatzoglou , Christoforos Theodorou , E.G. Ioannidis , Sebastien Haendler et al.

4th International Conference on Modern Circuits and Systems Technologies (MOCAST), organized by the FP7 Marie Curie IAPP Project FTK, the Greek National projects NANOTRIM and NANOMOS and the Micro & Nano Scientific Society, May 2015, Thessaloniki, Greece

Communication dans un congrès hal-02051762v1

Impact of the W scaling on bias temperature instability in nanowire transistors

A. Laurent , Xavier Garros , Sylvain Barraud , Gilles Reimbold , E. Vincent et al.

19th Conference on Insulating Films on semiconductors (INFOS), Jun 2015, Udine, Italy. pp.243-244

Communication dans un congrès hal-02051750v1

Electrical Characterization of Advanced CMOS devices

Gérard Ghibaudo

4th International Conference on Modern Circuits and Systems Technologies (MOCAST), organized by the FP7 Marie Curie IAPP Project FTK, the Greek National projects NANOTRIM and NANOMOS and the Micro & Nano Scientific Society, May 2015, Thessaloniki, Greece

Communication dans un congrès hal-02051772v1

3DVLSI with CoolCube process: An alternative path to scaling

P. Batude , C. Fenouillet-Beranger , L. Pasini , V. Lu , F. Deprat et al.

2015 IEEE Symposium on VLSI Technology, Jun 2015, Kyoto, Japan. pp.T48-T49, ⟨10.1109/VLSIT.2015.7223698⟩

Communication dans un congrès hal-02049760v1

Analysis of the SET and RESET states drift of phase-change memories by low frequency noise measurements

S. Souiki-Figuigui , V. Sousa , G. Ghibaudo , G. Navarro , M. Coue et al.

2015 IEEE International Reliability Physics Symposium (IRPS), Apr 2015, Monterey, United States. pp.MY.1.1-MY.1.5, ⟨10.1109/IRPS.2015.7112807⟩

Communication dans un congrès hal-02049588v1

Impact of short-channel effects on velocity overshoot in MOSFET

Gaspard Hiblot , Quentin Rafhay , Frédéric Boeuf , Gérard Ghibaudo

2015 IEEE 13th International New Circuits and Systems Conference (NEWCAS), Jun 2015, Grenoble, France. pp.521-524, ⟨10.1109/NEWCAS.2015.7182061⟩

Communication dans un congrès hal-02049733v1

Novel sheet resistance measurement on AlGaN/GaN HEMT wafer adapted from four-point probe technique

J. Lehmann , C. Leroux , G. Reimbold , M. Charles , A. Torres et al.

2015 International Conference on Microelectronic Test Structures (ICMTS), Mar 2015, Tempe, United States. pp.163-168, ⟨10.1109/ICMTS.2015.7106134⟩

Communication dans un congrès hal-02009889v1

A new approach for modeling drain current process variability applied to FDSOI technology

Y. Denis , F. Monsieur , D. Petit , C. Tavernier , H. Jaouen et al.

2014 15th International Conference on Ultimate Integration on Silicon (ULIS), Apr 2014, Stockholm, Sweden. pp.93-96, ⟨10.1109/ULIS.2014.6813924⟩

Communication dans un congrès hal-02048983v1

Statistical analysis of dynamic variability in 28nm FD-SOI MOSFETs

E. Ioannidis , S. Haendler , C. Theodorou , N. Planes , C. Dimitriadis et al.

2014 ESSDERC - 44th European Solid-State Device Research Conference, Sep 2014, Venice, Italy. pp.214-217, ⟨10.1109/ESSDERC.2014.6948798⟩

Communication dans un congrès hal-02001909v1

The importance of the spacer region to explain short channels mobility collapse in 28nm Bulk and FDSOI technologies

F. Monsieur , Y. Denis , D. Rideau , V. Quenette , G. Gouget et al.

2014 ESSDERC - 44th European Solid-State Device Research Conference, Sep 2014, Venice, Italy. pp.254-257, ⟨10.1109/ESSDERC.2014.6948808⟩

Communication dans un congrès hal-02049192v1

Resistive switching of HfO2-based metal-insulator-metal devices

Marie Minvielle , Romain Bachelet , Guillaume Saint-Girons , G. Ghibaudo , F. Alibart et al.

Colloque de Recherche Inter Écoles Centrales (CRIEC 2014), Jun 2014, Ecully, France

Communication dans un congrès hal-01489831v1

UTBB FD-SOI front- and back-gate coupling aware random telegraph signal impact analysis on a 6T SRAM

K.C Akyel , L. Ciampolini , O. Thomas , D. Turgis , G. Ghibaudo

2014 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2014, Millbrae, United States. pp.7a.3, ⟨10.1109/S3S.2014.7028222⟩

Communication dans un congrès hal-02049387v1

nFET FDSOI activated by low temperature solid phase epitaxial regrowth: Optimization guidelines

L. Pasini , P. Batude , M. Cassé , L. Brunet , P. Rivallin et al.

2014 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2014, Millbrae, United States. pp.6a.3, ⟨10.1109/S3S.2014.7028214⟩

Communication dans un congrès hal-02049393v1

Surface effects on split C-V measurements on SOI wafers

L. Pirro , Ionica I. , Gérard Ghibaudo , Sorin Cristoloveanu,

10th EUROSOI Workshop, Jan 2014, Tarragone, Spain

Communication dans un congrès hal-01182138v1

Cascode configuration as a substitute to LDE MOSFET for improved electrical mismatch performance

Lama Rahhal , Guillaume Bertrand , Aurélie Bajolet , Julien Rosa , Gérard Ghibaudo

2014 International Conference on Microelectronic Test Structures (ICMTS), Mar 2014, Udine, Italy. pp.238-242, ⟨10.1109/ICMTS.2014.6841499⟩

Communication dans un congrès hal-02049001v1

Frequency dependence of TDDB &amp; PBTI with OTF monitoring methodology in high-k/metal gate stacks

A. Bezza , M. Rafik , D. Roy , X. Federspiel , P. Mora et al.

2014 IEEE International Reliability Physics Symposium (IRPS), Jun 2014, Waikoloa, United States. pp.GD.6.1-GD.6.4, ⟨10.1109/IRPS.2014.6861149⟩

Communication dans un congrès hal-02049042v1

Experimental and theoretical understanding of Forming, SET and RESET operations in Conductive Bridge RAM (CBRAM) for memory stack optimization

J. Guy , G. Molas , P. Blaise , C. Carabasse , M. Bernard et al.

2014 IEEE International Electron Devices Meeting (IEDM), Dec 2014, San Francisco, United States. pp.6.5.1-6.5.4, ⟨10.1109/IEDM.2014.7046997⟩

Communication dans un congrès hal-02049407v1

Impact of Random Telegraph Signals on 6T high-density SRAM in 28nm UTBB FD-SOI

Kaya Can Akyel , Lorenzo Ciampolini , Olivier Thomas , David Turgis , Gérard Ghibaudo

2014 ESSDERC - 44th European Solid-State Device Research Conference, Sep 2014, Venice, Italy. pp.94-97, ⟨10.1109/ESSDERC.2014.6948766⟩

Communication dans un congrès hal-02048975v1

Split-CV for pseudo-MOSFET characterization: Experimental setups and associated parameter extraction methods

L. Pirro , I. Ionica , G. Ghibaudo , S. Cristoloveanu

2014 International Conference on Microelectronic Test Structures (ICMTS), Mar 2014, Udine, Italy. pp.14-19, ⟨10.1109/ICMTS.2014.6841461⟩

Communication dans un congrès hal-02003797v1

A new gate pattern measurement for evaluating the BTI degradation in circuit conditions

A. Subirats , X. Garros , J. Cluzel , J. El Husseini , F. Cacho et al.

2014 IEEE International Reliability Physics Symposium (IRPS), Jun 2014, Waikoloa, United States. pp.5D.1.1-5D.1.5, ⟨10.1109/IRPS.2014.6860670⟩

Communication dans un congrès hal-02049034v1

Variability-tolerant Convolutional Neural Network for Pattern Recognition applications based on OxRAM synapses

D. Garbin , O. Bichler , E. Vianello , Q. Rafhay , C. Gamrat et al.

2014 IEEE International Electron Devices Meeting, Dec 2014, San Francisco, United States. pp.28.4.1-28.4.4, ⟨10.1109/IEDM.2014.7047126⟩

Communication dans un congrès cea-01839848v1
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Effective field and universal mobility in high-k metal gate UTBB-FDSOI devices

Olivier Nier , Denis Rideau , Antoine Cros , Frédéric Monsieur , Gérard Ghibaudo et al.

27th International Conference on Microelectronic Test Structures (ICMTS), Mar 2014, Udine, Italy. pp.8 - 13, ⟨10.1109/ICMTS.2014.6841460⟩

Communication dans un congrès hal-01102474v1

Low-temperature characterization of Hall and effective mobility in junctionless transistors

Min-Kyu Joo , Mireille Mouis , Benjamin Piot , Sylvain Barraud , Minju Shin et al.

2014 11th International Workshop on Low Temperature Electronics (WOLTE), Jul 2014, Grenoble, France. pp.85-88, ⟨10.1109/WOLTE.2014.6881032⟩

Communication dans un congrès hal-02016510v1

A review of the pseudo-MOSFET and recent developments

Sorin Cristoloveanu, , Irina Ionica , Amer Diab , Luca Pirro , F.Y. Liu et al.

18th Int. Workshop on Dielectrics in Microelectronics (WODIM 2014), Jun 2014, Kinsale, Ireland

Communication dans un congrès hal-02009825v1

Horizontal Integration and Electrical Characterisation of Si/SiGe Nanowire Tunnel FETs

Virginie Brouzet , Bassem Salem , Priyanka Periwal , Guillaume Rosaz , Thierry Baron et al.

2014 E-MRS Spring Meeting: Symposium X: Materials Research for Group IV semiconductors: Growth, Characterization & Techno, Developments, G. Kissinger, S. Pizzini, H. Yamada-Kaneta, C. Clayes, D. Yang and G. Wilson, May 2014, Lille, France

Communication dans un congrès cea-02067074v1

Impact of quantum modulation of the inversion charge in the MOSFET subthreshold regime

Gaspard Hiblot , Quentin Rafhay , Frédéric Boeuf , Gérard Ghibaudo

2014 ESSDERC - 44th European Solid-State Device Research Conference, Sep 2014, Venice, Italy. pp.286-289, ⟨10.1109/ESSDERC.2014.6948816⟩

Communication dans un congrès hal-01959276v1

In depth characterization of electron transport in 14nm FD-SOI nMOS devices

Minju Shin , Ming Shi , Mireille Mouis , Antoine Cros , Emmanuel Josse et al.

10th EUROSOI Workshop, Jan 2014, Tarragone, Spain

Communication dans un congrès hal-01182132v1

Electrical transport in thin film transistors with In-Zn-O channels doped with post-transition metals

Mohammed Benwadih , Jan Chroboczek , Gérard Ghibaudo , Romain Coppard , Dominique Vuillaume

Journées Nationales du GdR OXYFUN " Oxydes fonctionnels : du matériau au dispositif ", Jun 2014, Autrans, France

Communication dans un congrès hal-01055034v1

In depth characterization of hole transport in 14nm FD-SOI pMOS devices

M. Shin , Minghua Shi , M. Mouis , A. Cros , E. Josse et al.

2014 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2014, Millbrae, United States. pp.6a.4, ⟨10.1109/S3S.2014.7028215⟩

Communication dans un congrès hal-02016535v1

(Invited) In Depth Study of Ge Impact on Advanced SiGe PMOS Transistors

A. Soussou , M. Cassé , G. Reimbold , C. Leroux , F. Andrieu et al.

226th ECS and SMEQ Joint International Meeting: 12th Symposium on Semiconductors, Dielectrics and Metal for Nanoelectronics, S. Kar, M. Houssa, H. Jagannathan, K. Kita, D. Landheer, D. Misra and S. Van Elshocht, Oct 2014, Cacun, Mexico

Communication dans un congrès hal-02051731v1

Fabrication and Electrical Characterization of tunnel FET Devices Based on Si/SiGe Heterojunction PIN nanowires

Virginie Brouzet , Bassem Salem , Priyanka Periwal , Thierry Baron , Franck Bassani et al.

2014 E-MRS Fall Meeting: Symposium B: Materials for Optics and Optoelectronics, G. Ben Assayag, M. Perego and P. Pellegrino, Sep 2014, Warsaw, Poland

Communication dans un congrès cea-02067075v1

Assessment of technological device parameters by low-frequency noise investigation in SOI omega-gate nanowire NMOS FETs

M. Koyama , M. Cassé , S. Barraud , G. Ghibaudo , H. Iwai et al.

2014 15th International Conference on Ultimate Integration on Silicon (ULIS), Apr 2014, Stockholm, Sweden. pp.57-60, ⟨10.1109/ULIS.2014.6813905⟩

Communication dans un congrès hal-02048986v1

Investigation of HfO<inf>2</inf>/Ti based vertical RRAM - Performances and variability

G. Piccolboni , G. Molas , C. Carabasse , J. F Nodin , C. Pellissier et al.

2014 14th Non-Volatile Memory Technology Symposium (NVMTS), Oct 2014, Jeju Island, South Korea. pp.134-138, ⟨10.1109/NVMTS.2014.7060867⟩

Communication dans un congrès hal-02049437v1

Chemically improved high performance solution processed indium gallium zinc oxide thin-film transistors

Mohammed Benwadih , Jan Chroboczek , Gérard Ghibaudo , Romain Coppard , Dominique Vuillaume

2014 E-MRS Spring Meeting Symposium I - Solution processing and properties of functional oxide thin films and nanostructures, J.E. ten Elshof, N. Mestres, A. Hardy, B. Malic, G.L.Brennecka, May 2014, Lille, France

Communication dans un congrès hal-00957798v1

Influence of Technological and Geometrical Parameters on Low-Frequency Noise in SOI Omega-Gate Nanowire NMOSFETs

Koyama M. , Cassé M. , Coquand R. , Barraud S. , Gérard Ghibaudo et al.

2014 International Symposium on VLSI Technology, Systems and Apllications, Proceedings of Technical Program (2014 VLSI-TSA), Apr 2014, Taiwan, China. pp.54-55, ⟨10.1109/VLSI-TSA.2014.6839653⟩

Communication dans un congrès hal-01182167v1

A mobility enhancement strategy for sub-14nm power-efficient FDSOI technologies

B. Desalvo , P. Morin , M. Pala , G. Ghibaudo , O. Rozeau et al.

2014 IEEE International Electron Devices Meeting (IEDM), Dec 2014, San Francisco, United States. pp.7.2.1-7.2.4, ⟨10.1109/IEDM.2014.7047002⟩

Communication dans un congrès hal-02049421v1

Insights in accesses optimization for nFET low temperature Fully Depleted Silicon On Insulator devices

L. Pasini , B. Sklenard , P. Batude , M. Cassé , P. Rivallin et al.

2014 14th International Workshop on Junction Technology (IWJT), May 2014, Shanghai, China. pp.33-38

Communication dans un congrès hal-02049010v1

Variability analysis &#x2014; Prediction method for nanoscale triple gate FinFETs

D. Tassis , I. Messaris , N. Fasarakis , S. Nikolaidis , G. Ghibaudo et al.

2014 IEEE 29th International Conference on Microelectronics (MIEL), May 2014, Belgrade, Serbia. pp.99-102, ⟨10.1109/MIEL.2014.6842095⟩

Communication dans un congrès hal-02049021v1

Mismatch trends in 20nm gate-last bulk CMOS technology

Lama Rahhal , Aurélie Bajolet , Jean-Philippe Manceau , Julien Rosa , Stéphane Ricq et al.

2014 15th International Conference on Ultimate Integration on Silicon (ULIS), Apr 2014, Stockholm, Sweden. pp.133-136, ⟨10.1109/ULIS.2014.6813916⟩

Communication dans un congrès hal-02048981v1

Low temperature characterization of mobility in advanced FD-SOI n-MOSFETs under interface coupling conditions

M. Shin , Minghua Shi , Mouis M. , A. Cros , Josse E. et al.

2014 15th International Conference on Ultimate Integration on Silicon (ULIS), Apr 2014, Stockholm, Sweden. pp.61-64, ⟨10.1109/ULIS.2014.6813906⟩

Communication dans un congrès hal-01182148v1

Low temperature characterization of 14nm FDSOI CMOS devices

M. Shin , Minghua Shi , M. Mouis , A. Cros , E. Josse et al.

2014 11th International Workshop on Low Temperature Electronics (WOLTE), Jul 2014, Grenoble, France. pp.29-32, ⟨10.1109/WOLTE.2014.6881018⟩

Communication dans un congrès hal-02049067v1

Strain transfer structure as a mobility booster for fully-depleted SOI MOSFETs at the 10nm node

Sylvain Morvan , Andrieu F. , Barbe J.-C. , Gérard Ghibaudo

14th Int. Conference on Ultimate Integration on Silicon, Mar 2013, Warwick, United Kingdom. ⟨10.1109/ULIS.2013.6523490⟩

Communication dans un congrès hal-01181854v1

Transport and interface characterization in ultra-thin body MOS devices

Gérard Ghibaudo

INFOS 2013, Jun 2013, Cracow, Poland

Communication dans un congrès hal-01074466v1

On the Optimization of Ebeam Lithography Using Hydrogen Silsesquioxane (HSQ) for Innovative Self-Aligned CMOS Process

R. Coquand , S. Monfray , J. Pradelles , L. Martin , M.-P. Samson et al.

223rd ECS Meeting, May 2013, Toronto, Canada

Communication dans un congrès hal-01020074v1

Impact of back biasing on the effective mobility in UTBB FDSOI CMOS technology

I. Ben-Akkez , C. Fenouillet-Beranger , A. Cros , F. Balestra , G. Ghibaudo

2013 International Semiconductor Conference Dresden-Grenoble: Technology, Design, Packaging, Simulation and Test International Conference and table Top Exhibition (ISCDG 2013), Sep 2013, Dresden, Germany. ⟨10.1109/ISCDG.2013.6656324⟩

Communication dans un congrès hal-01078796v1

New insight on the frequency dependence of TDDB in high-k/metal gate stacks

Anas Bezza , Mohammad Rafik , Daniel Roy , X. Federspiel , Pascal Mora et al.

IRW 2013, Oct 2013, South Lake Tahoe, CA, United States. ⟨10.1109/IIRW.2013.6804142⟩

Communication dans un congrès hal-01078341v1

Impact of dynamic variability on SRAM functionality and performance in nanoscaled CMOS technologies.

A. Subirats , X. Garros , J. Mazurier , J. El Husseini , O. Rozeau et al.

IRPS 2013, Apr 2013, Monterey, CA, United States. pp.389-393, ⟨10.1109/IRPS.2013.6532008⟩

Communication dans un congrès hal-01074529v1

Comparative simulation of TriGate and FinFET on SOI: Evaluating a multiple Threshold voltage strategy on triple gate devices

Gérard Ghibaudo

2013 IEEE SOI-3D-Subthreshold Microelectronics Technology unified conference, Oct 2013, Monterey (CA), United States. ⟨10.1109/S3S.2013.6716523⟩

Communication dans un congrès hal-01181250v1

Electrical simulation and characterization of random networks of conducting 1D structures

Min-Kyu Joo , M. Mouis , G.-T. Kim , U. J. Kim , G. Ghibaudo

first meeting on Transparent Conducting Materials, Nov 2013, grenoble, France

Communication dans un congrès hal-01060935v1

Sheet resistance measurement on AlGaN/GaN wafers and dispersion study

J. Lehmann , Cédric Leroux , M. Charles , A. Torres , E. Morvan et al.

INFOS 2013, Jun 2013, Cracow, Poland. pp.P.14

Communication dans un congrès hal-01074271v1

Evolution of low frequency noise and noise variability through CMOS bulk technology nodes

E.G. Ioannidis , S. Haendler , J. Rosa , J.-P. Manceau , C.A. Dimitriadis et al.

ICNF 2013 (Int. Conf. on Noise and Fluctuations), Jun 2013, Montpellier, France. pp.1-4, ⟨10.1109/ICNF.2013.6578985⟩

Communication dans un congrès hal-01024616v1

Simulation methodology for 2D random network of CNTs field-effect transistors

Joo Min-Kyu , Mouis M. , Kim Gyu-Tae , Kim Un Jeong , Gérard Ghibaudo

14th Int. Conference on Ultimate Integration on Silicon, Mar 2013, Warwick, United Kingdom. pp.197-200,, ⟨10.1109/ULIS.2013.6523518⟩

Communication dans un congrès hal-01181852v1

Modeling of the impact of source/drain regions on short channel effects in MOSFETs

Dutta T. , Quentin Rafhay , Pananakakis G. , Gérard Ghibaudo

14th Int. Conference on Ultimate Integration on Silicon, Mar 2013, Warwick, United Kingdom. ⟨10.1109/ULIS.2013.6523493⟩

Communication dans un congrès hal-01181252v1

Effective mobility in extra-thin film and ultra-thin BOX SOI wafers.

A. Diab , C. Fernández , L. Pirro , N. Rodriguez , I. Ionica et al.

EuroSOI 2013, Jan 2013, Paris, France. pp.2.4

Communication dans un congrès hal-01068430v1

Low-Frequency noise behavior of n-channel UTBB FD-SOI MOSFETs

C. G. Theodorou , F. Andrieu , T. Poiroux , O. Faynot , G. Ghibaudo et al.

ICNF 2013 (Int. Conf. on Noise and Fluctuations, Montpellier, France (June 2013), Jun 2013, Montpellier, France. pp.1-4, ⟨10.1109/ICNF.2013.6578986⟩

Communication dans un congrès hal-01025683v1

High Field Transport Characterization in Nano MOSFETs using 10GHz capacitance measurements

C. Diouf , A. Cros , D. Gloria , J. Rosa , G. Ghibaudo

IEDM 2013, Dec 2013, Washington, United States. pp.192-195, ⟨10.1109/IEDM.2013.6724583⟩

Communication dans un congrès hal-01074181v1

Parameters extraction in SiGe/Si pMOSFETs using split CV technique

A. Soussou , Leroux C. , Rideau D. , Toffoli A. , Romano G. et al.

2013 14th International Conference on Ultimate Integration on Silicon (ULIS), Mar 2013, Warwick, United Kingdom. ⟨10.1109/ULIS.2013.6523486⟩

Communication dans un congrès hal-01181784v1

Scaling of Ω-gate SOI nanowire N- and P-FET down to 10nm gate length: Size- and orientation-dependent strain effects

S. Barraud , R. Coquand , V. Maffini-Alvaro , M.-P. Samson , J.-M. Hartmann et al.

2013 Symposium on VLSI Technology: Digest of Technical Papers, Jun 2013, Kyoto, Japan. pp.T230-231

Communication dans un congrès hal-01182112v1

New methodology for drain current local variability characterization using Y function method

L. Rahhal , A. Bajolet , C. Diouf , A. Cros , J. Rosa et al.

IEEE ICMTS 2013, Mar 2013, Osaka, Japan. pp.99-103, ⟨10.1109/ICMTS.2013.6528153⟩

Communication dans un congrès hal-01024437v1

Innovative through-Si 3D lithography for ultimate self-aligned planar Double-Gate and Gate-All-Around nanowire transistors

Coquand R. , Monfray S. , Barraud S. , M. P. Samson , Arvet C. et al.

2013 Symposium on VLSI Technology: Digest of Technical Papers, Jun 2013, Kyoto, Japan. pp.T226-T227

Communication dans un congrès hal-01182106v1

Gate-Last Integration on planar FDSOI for low-VTp and low-EOT MOSFETs

S. Morvan , F. Andrieu , Cédric Leroux , X. Garros , M. Cassé et al.

INFOS 2013, Jun 2013, Cracow, Poland. pp.6.3

Communication dans un congrès hal-01074289v1

Understanding Ge impact on VT and VFB in Si1-xGex/Si pMOSFETs

A. Soussou , Cédric Leroux , D. Rideau , A. Toffoli , G. Romano et al.

INFOS 2013, Jun 2013, Cracow, Poland. pp.15.4

Communication dans un congrès hal-01074279v1

Strain-enhanced performance of Si-Nanowire FETs

S. Barraud , R. Coquand , M. Koyama , G. Ghibaudo , G. Reimbold

223rd ECS Meeting, May 2013, Toronto, Canada

Communication dans un congrès hal-01020599v1

Horizontal Integration and electrical characterisation of Silicon Nanowire Tunnel FETs

V. Brouzet , B. Salem , P. Periwal , T. Baron , F. Bassani et al.

ICONN 2013, 2013, Annecy, France

Communication dans un congrès hal-00955750v1

Influence of Device Scaling on Low-Frequency Noise in SOI Tri-Gate N- and P-Type Si Nanowire MOSFETs

M. Koyama , M. Cassé , R. Coquand , S. Barraud , G. Ghibaudo et al.

43rd ESSDERC, Sep 2013, Bucarest, Romania. pp.303-307, ⟨10.1109/ESSDERC.2013.6818878⟩

Communication dans un congrès hal-01022530v1

Electrical characterization of ultra-thin silicon-on-insulator substrates : static and split C–V measurements in the Pseudo–MOSFET configuration

Piro L. , Diab A. , Ionica I. , Gérard Ghibaudo , Cristoloveanu S.

4th Int. Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Technology (ULSIC ), Jul 2013, Villard de Lans, France. pp.203-208

Communication dans un congrès hal-01182173v1

Study of Low-Frequency Noise in SOI Tri-gate Si Nanowire MOSFETs

M. Koyama , M. Cassé , R. Coquand , S. Barraud , G. Ghibaudo et al.

ICNF 2013 (Int. Conf. on Noise and Fluctuations), Jun 2013, Montpellier, France. pp.1-4, ⟨10.1109/ICNF.2013.6578950⟩

Communication dans un congrès hal-01024536v1

Origins of the short channel effects increase in III-V nMOSFET technologies

T. Dutta , Quentin Rafhay , R. Clerc , J. Lacord , S. Monfray et al.

2012 13th International Conference on Ultimate Integration on Silicon (ULIS), Mar 2012, Grenoble, France

Communication dans un congrès hal-01959380v1

Impact of front-back gate coupling on low frequency noise in 28 nm FDSOI MOSFETs

Christoforos Theodorou , Eleftherios Ioannidis , Sebastien Haendler , Nicolas Planes , Franck Arnaud et al.

ESSDERC 2012 - 42nd European Solid State Device Research Conference, Sep 2012, Bordeaux, France. pp.334-337, ⟨10.1109/ESSDERC.2012.6343401⟩

Communication dans un congrès hal-02001870v1

Front-back gate coupling effect on 1/f noise in ultra-thin Si film FDSOI MOSFETs

C. Theodorou , E. Ioannidis , S. Haendler , N. Planes , F. Arnaud et al.

2012 International Semiconductor Conference Dresden-Grenoble (ISCDG) - formerly known as the Semiconductor Conference Dresden (SCD), Sep 2012, Grenoble, France. pp.223-226, ⟨10.1109/ISCDG.2012.6360011⟩

Communication dans un congrès hal-02001882v1
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Physical Understanding of Program Injection and Consumption in Ultra-Scaled SiN Split-Gate Memories

L. Masoero , V. Della Marca , G. Molas , M. Gély , O. Cueto et al.

2012 4th IEEE International Memory Workshop (IMW), May 2012, Milan, France. ⟨10.1109/IMW.2012.6213686⟩

Communication dans un congrès hal-01760589v1

New parameter extraction method based on split C-V for FDSOI MOSFETs

I. Ben Akkez , A. Cros , C. Fenouillet-Beranger , F. Boeuf , Quentin Rafhay et al.

2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC), Sep 2012, Bordeaux, France. ⟨10.1109/ESSDERC.2012.6343372⟩

Communication dans un congrès hal-01959345v1
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Scalability of split-gate charge trap memories down to 20nm for low-power embedded memories

L. Masoero , G. Molas , F. Brun , M. Gély , P. Colonna et al.

2011 IEEE International Electron Devices Meeting (IEDM), Dec 2011, Washington, United States. ⟨10.1109/IEDM.2011.6131522⟩

Communication dans un congrès hal-01760601v1

Mobility characterization in advanced FD-SOI CMOS devices

G. Ghibaudo

1st Ukrainian-French Symposium 'Semiconductor-On-Insulator Materials, Devices and Circuits: Physics, Technology and Diagnostics, 2010, Kiev, Ukraine

Communication dans un congrès hal-00604919v1

Impact of hot carrier stress on small signal MOSFET RF parameters

L. Negre , Daniel Roy , S. Boret , P. Scheer , N. Kauffmann et al.

IEEE Integrated Reliability Workshop IRW 2010, 2010, Lake Tahoe, United States

Communication dans un congrès hal-00604565v1

Contact Resistance in Top Gate / Bottom Contact OTFTs.

S. Altazin , R. Clerc , R. Gwoziecki , D. Boudinet , G. Ghibaudo et al.

Int. Conference on Organics Electronics, 2010, Paris, France

Communication dans un congrès hal-00604542v1

Investigation of the role of H-related defects in Al2O3 blocking layer on charge-trap memory retention by atomistic simulations and device physical modelling

G. Molas , L. Masoero , P. Blaise , A. Padovani , J. P. Colonna et al.

IEEE IEDM 2010,, 2010, San Francisco, CA, Spain

Communication dans un congrès hal-00604550v1

Static and low frequency noise characterization of P-type polymer and N-type small molecule OFETs

Y. Xu , G. Ghibaudo , F. Balestra , J. Chroboczek , R. Gwoziecki et al.

International Conference on Organic Electronics,, Jun 2010, Paris, France

Communication dans un congrès hal-00604546v1

Experimental Analysis of Surface Roughness Scattering in FinFET

J. W. Lee , D. Jang , M. Mouis , G. T. Kim , T. Chiarella et al.

40th European Solid-State Device Research Conference,, Sep 2010, Sevilla, Spain. pp.305-308

Communication dans un congrès hal-00604290v1

Electrical characterisation of SOI nanodevices

G. Ghibaudo

EUROSOI Conference,, 2010, Grenoble, France

Communication dans un congrès hal-00604524v1

MOS Transistor Matching at Low Temperature for Analog Circuit Design

P. Martin , A.S. Royet , G. Ghibaudo

9th Int. Workshop on Low Temperature Electronics, WOLTE 9, Jun 2010, Guaruja, Brazil

Communication dans un congrès hal-00604738v1

Comparison of Radio Frequency Physical Vapor Deposition target material used for LaOx cap layer deposition in 32nm

S. Baudot , P. Caubet , M. Grégoire , R. A. Bianchi , R. Pantel et al.

Int. Conf. materials for advanced metallization, MAM 2010, 2010, Malines, Belgium

Communication dans un congrès hal-00604574v1

Parameter Extraction of Nano-Scale MOSFETs Using Modified Y Function Method

N. Subramanian , G. Ghibaudo , M. Mouis

40th European Solid-State Device Research Conference,, Sep 2010, Sevilla, Spain. pp.309-312

Communication dans un congrès hal-00604302v1

Ultra-Thin (4nm) Gate-All-Around CMOS devices with High-k/Metal for Low Power Multimedia Applications

J.-L. Huguenin , S. Monfray , G. Bidal , S. Denorme , P. Perreau et al.

SSDM 2010, 2010, tokyo, Japan

Communication dans un congrès hal-00604648v1

Layered HfSiON-based tunnel stacks for voltage reduction and improved reliability in TANOS memories

G. Molas , Marc Bocquet , J. Colonna , V. Vidal , R. Kies et al.

Proceedings of 2010 International Symposium on VLSI Technology, System and Application, Apr 2010, Hsin Chu, France. ⟨10.1109/VTSA.2010.5488949⟩

Communication dans un congrès hal-01745640v1

In-depth analysis of 3D Silicon nanowire SONOS memory characteristics by TCAD simulations

Emmanuel Nowak , A. Hubert , L. Perniola , T. Ernst , G. Ghibaudo et al.

2nd International Memory Workshop, 2010, South Korea

Communication dans un congrès hal-00604552v1

Low temperature characterization of different deep submicron SOI and FinFET devices

J. Jomaah , K. Bennamane , F. Balestra , G. Ghibaudo

9th Int. Workshop on Low Temperature Electronics, WOLTE 9, Jun 2010, Guaruja, Brazil

Communication dans un congrès hal-00604735v1

Characterization and modelling of device variability in advanced CMOS technologies

G. Ghibaudo , C. Mezzomo , A. Bajolet , A. Cathignol , R. Difrenza

Int. workshop on Simulation and Characterization of Statistical CMOS Variability and Reliability, 2010, Bologna, Italy

Communication dans un congrès hal-00604921v1

Localized SOI Logic and Bulk I/O devices co-integration for Low Power System-on-Chip Technology.

J.-L. Huguenin , S. Monfray , S. Denorme , G. Bidal , P. Perreau et al.

International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), 2010, Taiwan

Communication dans un congrès hal-00604654v1

Hybrid Localized SOI/Bulk technology for Low Power System-on-Chip.

J.-L. Huguenin , S. Monfray , G. Bidal , S. Denorme , P. Perreau et al.

IEEE VLSI symposium 2010, 2010, Hawai, United States

Communication dans un congrès hal-00604653v1

Unified Soft Breakdown MOSFETs Compact Model: From Experiments to Circuit Simulation

L. Gerrer , M. Rafik , G. Ribes , G. Ghibaudo

21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, ESREF 2010,, 2010, Monte CassinO, Italy

Communication dans un congrès hal-00604282v1

Improved extraction of effective electric field and hole mobility in Ge and GeOI MOSFETs.

W. van den Daele , C. Le Royer , J. Mitard , G. Ghibaudo , S. Cristoloveanu

6th EUROSOI Workshop, Jan 2010, Grenoble, France

Communication dans un congrès hal-00604533v1

Novel characterization of fully-depleted GeOI pMOSFET by magnetoresistance.

W. van den Daele , C. Le Royer , E. Augendre , G. Ghibaudo , S. Cristoloveanu

2010 IEEE International SOI Conference, Oct 2010, San Diego, California, United States

Communication dans un congrès hal-00604645v1

Several Issues for Analog Design with a 0.18 µm CMOS Technology at Low Temperature

P. Martin , A.S. Royet , M. Cavelier , R. Fascio , G. Ghibaudo

9th Int. Workshop on Low Temperature Electronics, WOLTE 9, Jun 2010, Guaruja, Brazil

Communication dans un congrès hal-00604739v1

Dark Space, Quantum Capacitance and Inversion Capacitance in Si, Ge, GaAs and In0.53Ga0.47As nMOS Capacitors

Q. Rafhay , R. Clerc , J. Coignus , G. Pananakakis , G. Ghibaudo

Int. Conference on Ultimate Integration of Silicon, Mar 2010, Glasgow, UK, United Kingdom

Communication dans un congrès hal-00604652v1

From DC to RF MOSFET reliability (45mn).

L. Negre , Daniel Roy , S. Boret , P. Scheer , G. Ghibaudo

13th European Microwave Week, 2010, Paris, France

Communication dans un congrès hal-00604281v1

Drain Current Variability in 45nm Heavily Pocket-implanted Bulk MOSFET: Characterization and Modeling

C. M. Mezzomo , A. Bajolet , A. Cathignol , G. Ghibaudo

40th European Solid-State Device Research Conference,, Sep 2010, Sevilla, Spain

Communication dans un congrès hal-00604288v1

Electrical Characterization of Si nanowires

G. Ghibaudo

Int. Workshop on silicon nanowires (NANOSIL), 2010, Louvain, Belgium

Communication dans un congrès hal-00604917v1

Quantization Effects in Silicided and Metal Gate MOSFETs. ULIS

N. Rodriguez , F. Gámiz , R. Clerc , C. Sampedro , A. Godoy et al.

Int. Conference on Ultimate Integration of Silicon, Aachen, Mar 2009, Germany. pp.103-106

Communication dans un congrès hal-00604243v1

Intrinsic Cut Off Frequency of Si and GaAs Based Resonant Tunneling Diodes

E. Buccafurri , R. Clerc , F. Calmon , M. Pala , A. Poncet et al.

Int. Conference on Ultimate Integration of Silicon, Aachen, Mar 2009, Germany. pp.91-94

Communication dans un congrès hal-00604239v1

Vertical Transport in Spin Coated Ultra Thin Polycrystalline Pentacene Organic Stacks

S. Altazin , R. Clerc , R. Gwoziecki , D. Boudinet , J. M. Verilhac et al.

International Electron Device Meeting, Dec 2009, Balitimore, United States

Communication dans un congrès hal-00603814v1

Etat de l'art de la compréhension du transport quasi ballistique dans les composants MOS avancés

R. Clerc , Q. Rafhay , G. Ghibaudo

GDR Nanoélectronique, Atelier, De la réalité et de l'intérêt du transport balistique dans les composants nanoélectroniques, May 2009, Orsay, France

Communication dans un congrès hal-00604961v1

Impact of Ohmic Contacts on Space Charge Limited Currents in Au / Pentacene / Au Structures

S. Altazin , R. Clerc , R. Gwoziecki , G. Ghibaudo , G. Pananakakis et al.

International Conference on Organic Electronics 2009, Jun 2009, Liverpool, United Kingdom

Communication dans un congrès hal-00603796v1

Guidelines for MOSFET Device Optimization accounting for L-dependent Mobility Degradation.

G. Bidal , D. Fleury , G. Ghibaudo , F. Boeuf , T. Skotnicki

Conference workbook., 2009, kyoto, Japan

Communication dans un congrès hal-00604208v1

Electrical noise in semiconductor devices - Case of CMOS technologies.

G. Ghibaudo

Global e-workshop on semiconductor technology, 2009, North Korea

Communication dans un congrès hal-00604750v1

1/f Noise Modeling at Low Temperature with the EKV3 Compact Model.

P. Martin , G. Ghibaudo

NSTI Nanotech 2009, Workshop on Compact Modeling (WCM 2009), May 2009, Houston, United States. pp.636-638

Communication dans un congrès hal-00604193v1

Performance Boosters for Advanced SOI CMOS.

L. Pham Nguyen , C. Fenouillet-Beranger , Pl Perreau , S. Denorme , G. Ghibaudo

Advanced Workshop on 'Frontiers in Electronics' (WOFE 09),, 2009, Rincon, Puerto Rico

Communication dans un congrès hal-00604264v1

Mismatch Measure Improvement Using Kelvin Test Structures in Transistor Pair Configuration in Sub-Hundred Nanometer MOSFET Technology

C. M. Mezzomo , M. Marin , C. Leyris , G. Ghibaudo

IEEE International Conference on Microelectronic Test Structures, Apr 2009, Oxnard, United States. pp.62-67

Communication dans un congrès hal-00603793v1
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A New Technique to Extract the Gate Bias Dependent S/D Series Resistance of Sub-100nm MOSFETs

Dominique Fleury , Antoine Cros , Grégory Bidal , Hugues Brut , Emmanuel Josse et al.

International Symposium on VLSI Technology, Systems and Applications, Apr 2009, Hsinchu, Taiwan. pp.109 - 110, ⟨10.1109/VTSA.2009.5159314⟩

Communication dans un congrès hal-00465769v1

Charge Localization During Program and Retention in NROM-like Nonvolatile Memory Devices.

Emmanuel Nowak , E. Vianello , L. Perniola , Marc Bocquet , G. Molas et al.

International Conference on Solid State Devices and Materials (SSDM), 2009, Sendai, Japan

Communication dans un congrès hal-00604215v1

A stacked SONOS technology, up to 4 levels and 6nm crystalline nanowires, with gate-all-around or independent gates (Φ-Flash), suitable for full 3D integration.

A. Hubert , Emmanuel Nowak , K. Tachi , V. Maffini-Alvaro , C. Vizioz et al.

IEEE International Electron Devices Meeting, Baltimore,, Dec 2009, United States

Communication dans un congrès hal-00603802v1

Drift-diffusion and Ballistic Mobility Characterization in Nano CMOS Devices

G. Ghibaudo , M. Mouis , L. Pham-Nguyen , K. Bennamane , I. Pappas et al.

GDR Nanoélectronique, Atelier, De la réalité et de l'intérêt du transport balistique dans les composants nanoélectroniques, May 2009, Orsay, France

Communication dans un congrès hal-00604959v1

Analytical modeling of accumulation-mode suspended gate MOSFET and process challenges for very low operating power devices.

M. Collonge , M. Vinet , M. Ribeiro , J.-M. Pedini , B. Previtali et al.

Conference proceedings to be published, IEEE, 2009, Apr 2009, Hsinchu, Taiwan

Communication dans un congrès hal-00604262v1

Study of Organic Material FETs by Combined Static and Low Frequency Noise Measurements

Y. Xu , T. Minari , K. Tsukagoshi , K. Bock , M. Fadallah et al.

AIP Conference Proceedings, 2009, Pisa, Italy. pp.163-166

Communication dans un congrès hal-00603795v1

Oxide Soft BreakDown : From Device Modeling to Small Circuit Simulation

L. Gerrer , G. Ghibaudo , G. Ribes

39th European Solid-State Circuit Research Conference, Sep 2009, Athènes, Greece

Communication dans un congrès hal-00603730v1

Tuning the dipole at the High-k/SiO2 interface in advanced metal gate stacks

M. Charbonnier , Cédric Leroux , V. Cosnier , P. Besson , F. Martin et al.

International Conference on Insulating Films on Semiconductors (INFOS), Jul 2009, Cambridge, United Kingdom

Communication dans un congrès hal-00603834v1

From Atomistic to Device Level Investigation of Hybrid Redox Molecular/Silicon Field-Effect Memory Devices IMW

J. Buckley , T. Pro , R. Barattin , A. Calborean , K. Huang et al.

to be published (IEEE Conference Proceedings, 2009), May 2009, Monterey, CA, United States

Communication dans un congrès hal-00603820v1
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Guidelines for MOSFET Device Optimization accounting for L-dependent Mobility Degradation

Grégory Bidal , Dominique Fleury , Gérard Ghibaudo , Frédéric Boeuf , Thomas Skotnicki

Silicon Nanoelectronics Workshop (SNW), Jun 2009, Kyoto, Japan. pp.25-26

Communication dans un congrès hal-00465794v2

Pockets engineering impact on mismatch performance on 45nm MOSFET technologies

C. M. Mezzomo , C. Leyris , E. Josse , G. Ghibaudo

Int. Conference on Ultimate Integration of Silicon, Mar 2009, Aachen, Germany. pp.15-18

Communication dans un congrès hal-00604235v1
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Etude expérimentale de la balisticité du transport dans les transistors nMOS contraints sur silicium massif

Dominique Fleury , Grégory Bidal , Antoine Cros , Frédéric Boeuf , Thomas Skotnicki et al.

Journées Nationales du GdR Nanoélectronique, May 2009, Orsay, France. pp.18-19

Communication dans un congrès hal-00465797v1

New Experimental Insight into Ballisticity of Transport in Strained Bulk MOSFETs

D. Fleury , G. Bidal , A. Cros , F. Boeuf , T. Skotnicki et al.

IEEE Symposium on VLSI Technology (VLSI Symposium),, Jun 2009, kyoto, Japan

Communication dans un congrès hal-00604249v1

Electrical Transport characterization of nano CMOS devices with ultra-thin silicon film.

G. Ghibaudo , M. Mouis , L. Pham-Nguyen , K. Bennamane , I. Pappas et al.

to be published, IEEE Conference Proceedings (2009), 2009, kyoto, Japan

Communication dans un congrès hal-00603879v1

Strain sensitivity of gate leakage in biaxially strained FD-SOI nMOSFETs: a benefit for the performance trade-off and a novel way to extract the strain-induced band offset

F. Rochette , X. Garros , G. Reimbold , F. Andrieu , M. Cassé et al.

International Conference on Insulating Films on Semiconductors (INFOS), Jul 2009, Cambridge, United Kingdom

Communication dans un congrès hal-00603824v1

Challenges and Prospects of RF Oscillators Using Silicon Resonant Tunneling Diodes

E. Buccafurri , A. Medjahdi , F. Calmon , R. Clerc , M. Pala et al.

European Solid-State Device Research Conference, Sep 2009, Athènes, Greece. pp.237-241

Communication dans un congrès hal-00603719v1

Impact of Coulomb Scattering on the Characteristics of Nanoscale Devices

F. Boeuf , G. Ghibaudo , T. Skotnicki

International Conference on Solid State Devices and Materials (SSDM, 2009, Sendai, Japan

Communication dans un congrès hal-00604219v1

Relationship between mobility and high-k interface properties in advanced Si and SiGe nanowires

K. Tachi , M. Casse , D. Jang , C. Dupré , A. Hubert et al.

IEEE International Electron Devices Meeting, Dec 2009, Balitimore, United States

Communication dans un congrès hal-00603809v1

Mobility enhancement by CESL strain in SOI MOSFETs. Euro-SOI

L. Pham-Nguyen , C. Fenouillet-Beranger , G. Ghibaudo , S. Cristoloveanu

5th EUROSOI Workshop, Jan 2009, Göteborg, Sweden

Communication dans un congrès hal-00603735v1

Experimental Investigation of Transport Mechanisms through HfO2 Gate Stacks in nMOS Transistors

J. Coignus , Cédric Leroux , R. Clerc , G. Ghibaudo , G. Reimbold et al.

European Solid-State Device Research Conference,, Sep 2009, Athènes, Greece. pp.169-173

Communication dans un congrès hal-00603729v1

Low-Frequency Noise in a 0.18 µm Mixed-Mode CMOS Technology at Low Temperature

P. Martin , M. Cavelier , G. Ghibaudo

International Conference on Noise and Fluctuations (ICNF), 2009, Pisa, Italy

Communication dans un congrès hal-00603794v1

Impact of Progressive Soft Oxide Breakdown on MOS Parameters: Experiment and Modelling.

L. Gerrer , G. Ribes , G. Ghibaudo , J. Jomaah

15th Workshop on Dielectrics in Microelectronics, Berlin, Germany, Jun 2008, Berlin, Germany

Communication dans un congrès hal-00392468v1

Analog-Digital Circuit Design at Low Temperature.

P. Martin , M. Cavelier , R. Fascio , G. Ghibaudo

8th International Workshop on Low Temperature Electronics, WOLTE 8, Jena/Gabelbach, Germany, Jun 2008, Jena, Germany

Communication dans un congrès hal-00392479v1

Contact etch stop a-SixNy:H layer: a key factor for single polysilicon flash memory data retention.

G. Beylier , D. Benoit , P. Mora , S. Bruyère , G. Ghibaudo

15th Workshop on Dielectrics in Microelectronics, Berlin, Germany, Jun 2008, Berlin, Germany

Communication dans un congrès hal-00392476v1

15nm-diameter 3D Stacked Nanowires with optional Independent Gates operation (?FET)

C. Dupré , A. Hubert , S. Bécu , M. Jublot , V. Maffini-Alvaro et al.

IEEE International Electron Devices Meeting 2008, San Francisco, USA, Dec 2008, Grenoble, France

Communication dans un congrès hal-00392154v1

On the Influence of Molecular Linker on Charge Transfer Rate in Hybrid Molecular (Ferrocene)/Silicon Field Effect Memories.

J. Buckley , T. Pro , R. Barattin , A. Calborean , M. Gély et al.

23rd IEEE NVSMW / 3rd ICMTD '08, Club Méditerranée, Opio, FRANCE, May 2008, Opio, France

Communication dans un congrès hal-00392147v1

NANOSIL Network of Excellence: Silicon-based nanostructures and nanodevices for long-term nanoelectronics applications

F. Balestra , E. Parker , D. Leadley , S. Mantl , Emmanuel Dubois et al.

European Materials Research Society (E-MRS 2008), Symposium, May 2008, Strasbourg, France

Communication dans un congrès hal-00391849v1

Coupled Approach for Reliability Study of Fully Self Aligned SiGe:C 250GHz HBTs.

Mame Andallah Diop , N. Revil , M. Marin , F. Monsieur , T. Schwartzmann et al.

Integrated Reliability Workshop IRW, Lake Tahoe, USA, Nov 2008, USA, United States

Communication dans un congrès hal-00392171v1

How to Monitor Metal-Insulator-Metal (MIM) Capacitors Dielectric Reliability.

V. Martinez , C. Besset , F. Monsieur , D. Ney , L. Montès et al.

26th International Conference on Microelectronics, MIEL, Nis, Serbia, May 2008, Nis, Serbia

Communication dans un congrès hal-00392492v1

Aspects of nanoelectronics in Minatec.

G. Ghibaudo

Invited paper, Workshop on advances in nanoelectronics, Kuwait City, Kuwait, Mar 2008, Kuwait, Kuwait

Communication dans un congrès hal-00392464v1

Pushing Bulk Transistor with Conventional SiON Gate Oxide for Low Power Applications.

G. Bidal , F. Boeuf , F. Payet , S. Denorme , N. Loubet et al.

International Conference on Solid State Devices and Materials (SSDM 2008), Tokyo, Japon, Sep 2008, Tokyo, Japan

Communication dans un congrès hal-00392452v1

Impact of Oxide Progressive Soft Breakdown: Experiment and Modeling.

L. Gerrer , G. Ghibaudo , J. Jomaah , G. Ribes

Fringe workshop ESSDERC 08, Edinburgh, UK, Sep 2008, Edinburgh, Ireland

Communication dans un congrès hal-00392142v1

Nano Accumulation-Mode Suspended-Gate MOSFET: Impact of adhesion forces on electro-mechanical characteristics.

M. Collonge , M. Vinet , S. Deleonibus , G. Ghibaudo

IEEE ULIS conference, Udine, Italy, Mar 2008, Udine, Italy

Communication dans un congrès hal-00392458v1

Low-Temperature Electrical Characterization of eXtra-strained FD-SOI n-MOSFETs with TiN/HfO2 gate stack for the 32nm Technology Node.

S. Feruglio , F. Andrieu , O. Faynot , Patrick Garda , G. Ghibaudo

8th International Workshop on Low Temperature Electronics, WOLTE 8, Jena/Gabelbach, Germany, Jun 2008, Jena, Germany

Communication dans un congrès hal-00392485v1

Contributions and Limits of Charge Pumping Measurement for Addressing Trap Generation in High-K/SiO2 Dielectric Stacks.

M. Rafik , G. Ghibaudo

IEEE IRPS 2008, Phoenix, Arizona, USA, Apr 2008, Phoenix, United States

Communication dans un congrès hal-00392166v1

Low Frequency Noise Analysis in HfO2/SiO2 gate oxide Fully-Depelted SOI Transistors.

L. Zafari , J. Jomaah , G. Ghibaudo , O. Faynot

15th Workshop on Dielectrics in Microelectronics, Berlin, Germany, Jun 2008, Berlin, Germany

Communication dans un congrès hal-00392487v1

New Physical Model for ultra-scaled 3D Nitride-Trapping Non-Volatile Memories.

Emmanuel Nowak , Marc Bocquet , L. Perniola , G. Ghibaudo , G. Molas et al.

IEEE International Electron Devices Meeting 2008, San Francisco, USA, Dec 2008, San Francisco, United States

Communication dans un congrès hal-00392162v1

Impact of Inside Spacer Process on Fully Self-Aligned 250 GHz SiGe:C HBTs Reliability Performances: a - Si vs. Nitride.

Mame Andallah Diop , N. Revil , M. Marin , F. Monsieur , P. Chevalier et al.

ESREF 2008, Maastricht, The Netherlands, Sep 2008, -, Netherlands

Communication dans un congrès hal-00392127v1

On the Influence of Fin Corner Rounding in 3D Nanocrystal Flash Memories.

Emmanuel Nowak , L. Perniola , G. Ghibaudo , C. Jahan , P. Scheiblin et al.

23rd IEEE NVSMW / 3rd ICMTD '08, Club Méditerranée, Opio, FRANCE, May 2008, Opio, France

Communication dans un congrès hal-00392144v1

Performances Comparison of Si and GaAs Based Resonant Tunneling Diodes

E. Buccafurri , R. Clerc , F. Calmon , M. Pala , A. Poncet et al.

ISCS 2008, The International Symposium on Compound Semiconductors, Sep 2008, Grenoble, France

Communication dans un congrès hal-00391921v1

Analytical Modeling of Tunneling Current through SiO2-HfO2 Stacks in MOS Structures

J. Coignus , R. Clerc , Cédric Leroux , G. Reimbold , G. Ghibaudo

15th Workshop on Dielectrics in Microelectronics, Jun 2008, Berlin, France

Communication dans un congrès hal-00391881v1

New characterization methods for nanoMOSFETs.

G. Ghibaudo

MIGAS 2008, Autrans, Jun 2008, Autrans, France

Communication dans un congrès hal-00392178v1

Planar Bulk+ Technology using TiN/Hf-based gate stack for Low Power Applications.

G. Bidal , F. Boeuf , S. Denorme , N. Loubet , C. Laviron et al.

2008 Symposium on VLSI Technology, Hawai, USA, Jun 2008, Hawai, United States

Communication dans un congrès hal-00392459v1

Analysis of Electron Mobility in HfO2/TiN MOSFETs: The influence of HfO2 thickness, Temperature and oxide charge

M.A. Negara , K. Cherkaoui , C.D. Young , P. Majhi , W. Tsai et al.

39th IEEE Semiconductor Interface Specialists Conference, San Diego, Dec 2008, USA, France

Communication dans un congrès hal-00391866v1

Estimations of the Ion-Ioff Performances of Nano nMOSFETs with Alternative Channels Materials

Q. Rafhay , R. Clerc , G. Pananakakis , G. Ghibaudo

4th EUROSOI Workshop, Jan 2008, EUROSOI, France. pp.43-44

Communication dans un congrès hal-00391957v1

Reliability of charge trapping memories with high-k control dielectrics

G. Molas , Marc Bocquet , H. Grampeix , J.P. Colonna , L. Masarotto et al.

5th International Symposium on Advanced Gate Stack Technology, Austin, Texas, Sep 2008, Austin, United States

Communication dans un congrès hal-00392559v1

A Mobility Extraction Method for 3D Multichannel Devices.

C. Dupré , T. Ernst , E. Bernard , B. Guillaumot , N. Vulliet et al.

38th European Solid-State Device Research Conference (ESSDERC'08),, Sep 2008, Grenoble, France

Communication dans un congrès hal-00391984v1

Study of Ferrocene/Silicon Hybrid Memories: Influence of the Chemical Linkers and Device Thermal Stability.

T. Pro , J. Buckley , R. Barattin , A. Calborean , M. Gély et al.

38th European Solid-State Device Research Conference (ESSDERC'08), Edinburgh, UK, Sep 2008, -, France

Communication dans un congrès hal-00392137v1

Experimental characterization of advanced nano-scale MOSFETs

G. Ghibaudo

Sinano School, Bertinoro, Italy,, Sep 2008, Bertinoro, Italy

Communication dans un congrès hal-00392189v1

SiO2 Interfacial Layer as The Origin of The Breakdown of High-k Dielectric Stacks.

M. Rafik , G. Ribes , G. Ghibaudo

15th Workshop on Dielectrics in Microelectronics, Berlin, Germany, Jun 2008, -, Germany

Communication dans un congrès hal-00392472v1

Source-to-Drain vs. Band-to-Band Tunneling in Ultra-Scaled DG nMOSFETs with Alternative Channel Materials

Q. Rafhay , R. Clerc , G. Pananakakis , G. Ghibaudo

2008 International Conference on Solid State Devices and Materials, Sep 2008, -, France

Communication dans un congrès hal-00391924v1

Direct comparison of Si/High-K and Si/SiO2 channels in advanced FD SOI MOSFETs.

L. Pham-Nguyen , C. Fenouillet-Beranger , A. Vandooren , A. Wild , G. Ghibaudo et al.

IEEE International SOI Conference, New Paltz, New York USA, Nov 2008, New York, United States

Communication dans un congrès hal-00392447v1

New Y-Function-Based Methodology for Accurate Extraction of Electrical Parameters on Nano-Scaled MOSFETs

D. Fleury , A. Cros , H. Brut , G. Ghibaudo

IEEE International Conference on Microelecronics Test Structure, ICMTS, Edinburgh, Scotland, 2008, Edinburgh, France

Communication dans un congrès hal-00392150v1

Back-Scattering in Quasi Ballistic NanoMOSFETs: The role of Non Thermal Carrier Distributions

R. Clerc , P. Palestri , L. Selmi , G. Ghibaudo

IEEE ULIS conference, Mar 2008, Grenoble, France

Communication dans un congrès hal-00391933v1

NANOSIL Network of Excellence : silicon-based nanostructures and nanodevices for long-term nanoelectronics applications

F. Balestra , E. Parker , D. Leadley , S. Mantl , Emmanuel Dubois et al.

European Materials Research Society Spring Meeting, E-MRS Spring 2008, Symposium I : Front-end junction and contact formation in future Silicon/Germanium based devices, 2008, Strasbourg, France

Communication dans un congrès hal-00361546v1

Impact of Silicon nitride CESL on NLDEMOS transistor reliability.

G. Beylier , S. Bruyère , D. Benoit , G. Ghibaudo

ESREF 2008, Maastricht, The Netherlands, Sep 2008, Maastricht, Netherlands

Communication dans un congrès hal-00392129v1

Impact of scaling on electrostatics of germanium-channel MOSFET-analytical study.

E. Batail , S. Monfray , A. Pouydebasque , G. Ghibaudo , T. Skotnicki

IEEE Silicon Nanoelectronics Workshop, Honolulu, USA, Jun 2008, Honolulu, United States

Communication dans un congrès hal-00392184v1

On the Role of a HTO/Al2O3 Bi-Layer Blocking Oxide in Nitride-Trap Non-Volatile Memories

Marc Bocquet , G. Molas , L. Perniola , X. Garros , J. Buckley et al.

38th European Solid-State Device Research Conference (ESSDERC'08), Edinburgh, UK, Sep 2008, Edinburgh, France

Communication dans un congrès hal-00392558v1
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Intrinsic fixed charge and trapping properties of HfAlO interpoly dielectric layers

Marc Bocquet , G. Molas , H. Grampeix , J. Buckley , F. Martin et al.

International Conference on Memory Technology and Design (ICMTD), May 2007, Giens, France

Communication dans un congrès hal-01745578v1

Low Frequency Noise Performance in TiN/HfO2 Fully Depleted SOI nMOSFET

L. Zafari , J. Jomaah , G. Ghibaudo , O. Faynot

IEEE Int. SOI Conference, 2006, USA, United States. pp.XX

Communication dans un congrès hal-00147154v1

In-depth Investigation of Hf-based High-k Dielectrics as Storage Layer of Charge-Trap

J. Buckley , Marc Bocquet , G. Molas , M. Gely , P. Brianceau et al.

NVMsIEDM 2006, 2006, San Francisco, United States. pp.XX

Communication dans un congrès hal-00147137v1

Initial and PBTI-induced traps and charges in Hf(Six)Oy / TiN stacks

G. Reimbold , J. Mitard , X. Garros , C. Leroux , Gérard Ghibaudo et al.

WODIM 06, 2006, Catania, Italy

Communication dans un congrès hal-00145682v1

High mobility nanometer-scaled CMOS: opportunities and challenges

T. Ernst , F. Andrieu , O. Weber , C. Dupré , O. Faynot et al.

Third International SiGe Technology and Device Meeting (ISTDM), May 2006, Princeton, New Jersey, United States

Communication dans un congrès hal-00145675v1

Low Frequency Noise and Fluctuations in sub 0.1µm Bulk and SOI CMOS Technologies

Gérard Ghibaudo , J. Jomaah

MIEL 2005, 2006, Nis, Serbia

Communication dans un congrès hal-00145669v1

Étude de la mobilité effective dans les DG MOSFET quasi-balistiques

K. Huet , J. Saint-Martin , A. Bournel , G. Ghibaudo , P. Dollfus et al.

xxxx, 2006, Grenoble, France. pp.XX

Communication dans un congrès hal-00148265v1

Low Frequency Noise in advanced CMOS devices

Gérard Ghibaudo , J. Jomaah

3rd Int. Symp. On System construction of global network oriented information electronics, 2006, Sendai, Japan

Communication dans un congrès hal-00145666v1

Impact of a single grain boundary in the polycrystalline silicon gate on sub 100nm bulk MOSFET characteristics - Implication on matching properties

A. Cathignol , K. Rochereau , G. Ghibaudo

ULIS conference, 2006, Grenoble, France. pp.XX

Communication dans un congrès hal-00146955v1

Injection Velocity Optimization in Quasi-Ballistic Si-nMOSFETs

M. Ferrier , R. Clerc , Q. Raphay , F. Daugé , Gérard Ghibaudo et al.

Silicon Nanoelectronics Workshop, 2006, Honolulu, United States

Communication dans un congrès hal-00146658v1

Surface Segregation and Electrical Studies of Heavily Arsenic and Phosphorus in situ Doped Epi and Poly Silicon

G. Borot , L. Rubaldo , N. Breil , J. Boussey , G. Ghibaudo et al.

2006-International-SiGe-Technology-and-Device-Meeting, 2006, CANCUN, Mexico. pp.XX

Communication dans un congrès hal-00147148v1

Experimental evidence of mobility enhancement in short-channel ultra-thin body double-gate MOSFETs

W. Chaisantikulwat , M. Mouis , G. Ghibaudo , S. Cristoloveanu , J. Widiez et al.

36th European Solid-State Device Research Conference (ESSDERC'06), 2006, Genève, Switzerland. Actes pp. 367-370

Communication dans un congrès hal-00147170v1

Transport parameter extraction in short channel MOS transistors

G. Ghibaudo

Journées du GDR Nanoélectronique, 2006, GRENOBLE, France

Communication dans un congrès hal-00148263v1

Reliability characteristics of 150GHz fT/fmax Heterojunction Bipolar Transistors under reverse, forward and mixed-mode stress

M. Ruat , J. Bourgeat , M. Marin , G. Ghibaudo , N. Revil et al.

Int. Reliability Workshop 2006, 2006, Stanford Sierra, United States. pp.XX

Communication dans un congrès hal-00147143v1

Refined electrical analysis of two charge states transition characteristic of "borderless" silicon nitride

G. Beylier , S. Bruyère , D. Benoit , G. Ghibaudo

WoDIM 2006, 2006, Catania, Italy. pp.XX

Communication dans un congrès hal-00147130v1

Drain and Gate Current Low Frequency Noise in Biaxially Strained Siliconn-MOSFETs with Ultrathin Gate Oxides

T. Contaret , T. Boutchacha , G. Ghibaudo , F. Bœuf , T. Skotniki

ULIS conference, 2006, Grenoble, France. pp.XX

Communication dans un congrès hal-00146961v1

Nanoscaled MOSFET transistors on strained Si, SiGe &amp; Ge layers: some integration and electrical feature

Thomas Ernst , Francois Andrieu , Olivier Weber , Jean Michel Hartmann , Cecilia Dupré et al.

210th Meeting of The Electrochemical Society, symposium "SiGe and Ge: Materials, Processing, and Devices", Oct 2006, Cancun, Mexico. pp.# 1496

Communication dans un congrès hal-00145678v1

Electrical Characterization of Single and Multi Gate Device

Gérard Ghibaudo , Sorin Cristoloveanu,

Int. Summer School on Advanced Microelectronics MIGAS 2006, 2006, Autrans, France

Communication dans un congrès hal-00145688v1

Perspectives du Formalisme Dérive Diffusion en Régime Quasi Ballistique pour la Modélisation Analytique des Composants MOS

R. Clerc , P. Palestri , M. Ferrier , Q. Rafhay , G. Pananakakis et al.

GDR Nano, Journées " Simulation et Caractérisation ", 2006, GRENOBLE, France. pp.XX

Communication dans un congrès hal-00148261v1

New insight on Stress Induced Leakage Current on SiO2/HfO2 stack

M. Rafik , G. Ribes , G. Ghibaudo

XX, 2006, XX, France. pp.XX

Communication dans un congrès hal-00147141v1

Impact of Film Thickness on LF Noise in SOI Devices

L. Zafari , J. Jomaah , G. Ghibaudo

International Conference on Solid State Devices and Materials (SSDM 2006), 2006, Japan, Japan. pp.XX

Communication dans un congrès hal-00147157v1

Saturation Drain Current analytical modeling of Single Gate Fully Depleted SOI or SON MOSFETs in the Quasi Ballistic Regime of Transport

M. Ferrier , R. Clerc , L. Lucci , Gérard Ghibaudo , A. Vandooren et al.

2006 IEEE International SOI Conference, 2006, Niagara Falls, United States. pp.XX

Communication dans un congrès hal-00146654v1

Influence of interface coupling on the mobility in FD-SOI MOSFETs

W. Chaisantikulwat , M. Mouis , G. Ghibaudo , S. Cristoloveanu , C. Gallon et al.

NATO International Advanced Research Workshop, 2006, Ukraine, Ukraine. pp.XX

Communication dans un congrès hal-00147174v1

Influence of interface coupling on the mobility in FDSOI MOSFETs

W. Chaisantikulwat , M. Mouis , G. Ghibaudo , S. Cristoloveanu , C. Gallon et al.

Com à NATO Advanced Research Workshop on Nanoscaled Semiconductor-On-Insulator Structures and Devices, 2006, Ukraine, Ukraine. pp.XX

Communication dans un congrès hal-00147178v1

Floating Body Effects in 90nm Partially Depleted MOSFETs

L. Zafari , J. Jomaah , G. Ghibaudo

ULIS conference, 2006, GRENOBLE, France. pp.XX

Communication dans un congrès hal-00147163v1

Low Frequency Noise in Multi-Gate SOI CMOS Devices

L. Zafari , J. Jomaah , G. Ghibaudo

EUROSOI conference, 2006, GRENOBLE, France. pp.XX

Communication dans un congrès hal-00147152v1

Improved methodology for the Characterization of Avt MOSFET matching parameter dispersion

A. Cathignol , K. Rochereau , S. Bordez , G. Ghibaudo

IEEE ICMTS 2006, 2006, Grenoble, France. pp.XX

Communication dans un congrès hal-00146936v1

Novel 3D integration process for highly scalable Nano-Beam stacked-channels GAA (NBG) CMOSFETs with HfO2/TiN gate stack

T. Ernst , C. Dupre , C. Isheden , E. Bernard , R. Ritzenthaler et al.

IEDM 2006, 2006, San Francisco, United States. pp.XX

Communication dans un congrès hal-00147138v1

Ultra-thin fully-depleted SOI MOSFETs: special charge properties and coupling effects

S. Eminente , Sorin Cristoloveanu , R. Clerc , A. Ohata , Gérard Ghibaudo

EUROSOI 2006, 2006, Grenoble, France

Communication dans un congrès hal-00146784v1

Impact of emitter resistance mismatch on base and collector current matching in bipolar transistors

S. Danaie , A. Perrotin , G. Ghibaudo , J.-C. Vildeuil , G. Morin et al.

IEEE ICMTS 2006, 2006, Grenoble, France. pp.XX

Communication dans un congrès hal-00146931v1

Quantum effects influence on thin silicon film capacitor-less DRAM performance

S. Puget , G. Bossu , A. Regnier , R. Ranica , A. Villaret et al.

International SOI Conference, Oct 2006, New York, United States. pp.157-158

Communication dans un congrès hal-00525093v1

Investigation of interface defects and bulk charges in metal gate HfO_2 MOSFETs

M.A. Negara , K. Cherkauoi , G. Ghibaudo , D. Bauza , W. Tsaii et al.

European Materials Research Science Spring Meeting, 2006, STRASBOURG, France. pp.XX

Communication dans un congrès hal-00147150v1

Unexpected mobility degradation for very short devices : A new challenge for CMOS scaling

A. Cros , K. Romanjek , D. Fleury , S. Harrison , R. Cerutti et al.

IEDM 2006, 2006, San Francisco, United States. pp.XX

Communication dans un congrès hal-00147133v1

Quantum effects influence on thin silicon film capacitor-less DRAM performance

S. Puget , G. Bossu , A. Regnier , R. Ranica , A. Villaret et al.

IEEE Int. SOI Conference, 2006, USA, United States. pp.XX

Communication dans un congrès hal-00147145v1

Impact of TiN post-treatment on Metal Insulator Metal capacitors performances

A. Bajolet , J.P. Manceau , S. Bruyère , R. Clerc , M. Proust et al.

MAM 2006, Materials for Advanced Metallization Conference, 2006, GRENOBLE, France. pp.XX

Communication dans un congrès hal-00146672v1

Mobility Extraction in Double-Gate MOSFETs by Magnetoresistance Technique (poster)

W. Chaisantikulwat , M. Mouis , G. Ghibaudo , S. Cristoloveanu , J. Widiez et al.

Journées "Simulation et caractérisation des nanocomposants" du GDR Nanoélectronique, 2006, Grenoble, France. pp.XX

Communication dans un congrès hal-00148279v1

Large scale time characterization and analysis of PBTI in HfO2/metal gate stacks

J. Mitard , X. Garros , L.P. Nguyen , Cédric Leroux , G. Ghibaudo et al.

IRPS 2005, 2006, Grenoble, France. pp.XX

Communication dans un congrès hal-00146929v1

Accurate Determination of Flat Band Voltage in advanced MOS structure

Cédric Leroux , G. Ghibaudo , G. Reimbold

WoDIM 2006, 2006, Catania, Italy. pp.XX

Communication dans un congrès hal-00147129v1
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Unified Analysis of Degraded Base Current in SiGe:C HBTs after Reverse and Forward Reliability Stress

Marie Ruat , Nathalie Revil , Georges Pananakakis , Gérard Ghibaudo

IEEE Bipolar - BiCMOS Circuits and Technology Meeting (BCTM2006), 2006, Maastricht, Netherlands. ⟨10.1109/BIPOL.2006.311156⟩

Communication dans un congrès hal-00147125v1

Magnetoresistance Mobility Meaurements in Gate-All-Around SON MOSFETs

W. Chaisantikulwat , M. Mouis , Gérard Ghibaudo , Duncan Kennedy Maude , A. Cros et al.

Workshop Euro-SOI, 2005, GRANADA, Spain. pp.XX

Communication dans un congrès hal-00146521v1

Magnetoresistance technique for mobility extration in short channel FD-SOI transistors

W. Chaisantikulwat , M. Mouis , Gérard Ghibaudo , C. Gallon , C. Fenouillet-Beranger et al.

35th European Solid-State Device Research Conference (ESSDERC'05), ESSDERC 05, 2005, GRENOBLE, France. pp.569-572

Communication dans un congrès hal-00146565v1

Experimental mobility study of DG-GAA MOSFETs down to 40nm gate length

A. Cros , S. Harrison , P. Coronel , P. Balossier , T. Skotnicki et al.

EUROSOI 2005: First Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits, 2005, Granada, Spain

Communication dans un congrès hal-00146483v1

Electrical characterization of high density trench capacitors, and comparison with planar capacitors

A. Bajolet , J.C. Giraudin , S. Bruyère , C. Rossato , P. Delpech et al.

Workshop sur les nouveaux oxydes à forte permittivité pour l'intégration dans les semiconducteurs, 2005, Autrans, France

Communication dans un congrès hal-00146515v1

In-Depth Study of Strained SGOI nMOSFETs down to 30nm Gate Length

F. Andrieu , T. Ernst , O. Faynot , O. Rozeau , Y. Bogumilowicz et al.

35st European Solid-State Device Research Conference, 2005, Grenoble, France

Communication dans un congrès hal-00146508v1

New extraction method for gate bias dependent series resistance in nanometric double gate transistors.

A. Cros , S. Harrison , R. Cerutti , P. Coronel , Gérard Ghibaudo et al.

International Conference on Microelectronic Test Structures - ICMTS, 2005, Louvain, Belgium

Communication dans un congrès hal-00146484v1

Planar glass integrated optical structure based on prism decoupling for sensing application

C.A Sánchez-Pérez , G. Ghibaudo , J.E. Broquin

Photonic Integration, Proc. SPIE 5728, 2005, SAN JOSE CA, United States. pp.XX

Communication dans un congrès hal-00148004v1

3D High Density MIM Capacitors Integrated in BiCMOS Technology

A. Bajolet , C. Giraudin , C. Rossato , L. Pinzelli , S. Bruyère et al.

35th European Solid-State Device Research Conference (ESSDERC'05), 2005, GRENOBLE, France. pp.XX

Communication dans un congrès hal-00146518v1

Analytical model for subband engineering in undoped double gate MOSFETs

Marlène Ferrier , Raphaël Clerc , Georges Pananakakis , Gérard Ghibaudo , Frédéric Boeuf et al.

International Conference on Solid State Devices and Materials 2005, Sep 2005, Kobe, Japan. pp.280-281

Communication dans un congrès hal-00146187v1

Experimental Investigation of Low and High Field Transport in Substrate- and Process-Induced Strained Nanoscaled MOSFETs

F. Andrieu , T. Ernst , F. Lime , F. Rochette , K. Romanjek et al.

Symposium on VLSI Technology, 2005, Kyoto, Japan. pp.XX

Communication dans un congrès hal-00146481v1

Investigation of the Effective Field Impact on the Carrier Mobility in sub-100nm MOSFETs

F. Andrieu , T. Ernst , Gérard Ghibaudo , S. Deleonibus

ULtimate Integration of Silicon (ULIS) Workshop, 2005, Bologne, Italy

Communication dans un congrès hal-00146505v1
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Modelling of the Programming Window Distribution in Multi Nanocrystals Memories

Luca Perniola , Barbara De Salvo , Gérard Ghibaudo , Armando Foglio Para , Georges Pananakakis et al.

ESSDERC, 2003, Lisbon, Portugal. ⟨10.1109/TNANO.2003.820782⟩

Communication dans un congrès hal-00485165v1

Influence of dots size and dots number fluctuations on the electrical characteristics of multi nanocrystal memory devices

L. Perniola , B. de Salvo , T. Baron , G. Ghibaudo , S. Lombardo

WODIM 2002, 2002, Grenoble, France

Communication dans un congrès hal-00486141v1

Nano crystal memory devices characterization using the charge pumping technique

P. Masson , L. Militaru , B. de Salvo , G. Ghibaudo , V. Celibert et al.

ESSDERC, 2002, Irlande, Ireland

Communication dans un congrès hal-00484546v1

Low Temperature Characterization and Modeling of FDSOI Transistors for Cryo CMOS Applications

Mikaël Cassé , Gérard Ghibaudo

Low-Temperature Technologies [Working Title], IntechOpen, 2021, ⟨10.5772/intechopen.98403⟩

Chapitre d'ouvrage hal-03309147v1
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Noise and Fluctuations in Fully Depleted Silicon-On-Insulator MOSFETs

Christoforos Theodorou , Gérard Ghibaudo

Noise in Nanoscale Semiconductor Devices, 2020

Chapitre d'ouvrage hal-03090062v1

Nanowire Devices

Gérard Ghibaudo , Sylvain Barraud , Mikaël Cassé , Xin Peng Wang , Guo Qiang Lo et al.

Ed. by F. Balestra. Beyond‐CMOS Nanodevices 2, Wiley-ISTE, pp.25-95, 2014, Nanoscience and Nanotechnology Series, 978-1-84821-655-6 978-1-11898-513-7. ⟨10.1002/9781118985137.ch2⟩

Chapitre d'ouvrage hal-02051240v1

Electron and Hole Mobility in Semiconductor Devices

Quentin Rafhay , Gérard Ghibaudo

Ed. by J.G. Webster. Wiley Encyclopedia of Electrical and Electronics Engineering, John Wiley & Sons, Inc., 2014, ⟨10.1002/047134608X.W3148.pub2⟩

Chapitre d'ouvrage hal-01959198v1

Sensitivity of silicon nanowire biochemical sensors

Pierpaolo Palestri , Mireille Mouis , Aryan Afzalian , Luca Selmi , Federico Pittino et al.

F. Balestra. Beyond CMOS Nanodevices 1, Wiley-ISTE, pp.43-64, 2014, Nanoscience and nanotechnology series, 978-1-84821-654-9, 978-1-11898-477-2. ⟨10.1002/9781118984772.ch3⟩

Chapitre d'ouvrage hal-01059156v1

Modeling of End of the Roadmap nMOSFET with Alternative Channel Material

Quentin Rafhay , R. Clerc , G. Ghibaudo , P. Palestri , L. Selmi

Nanoscale CMOS: Innovative Materials, Modeling and Characterization, John Wiley & Sons, Inc., pp.287-334, 2013

Chapitre d'ouvrage hal-01959425v1

Special issue of selected papers from "35th ESSDERC Conference", volume 50, Elsevier Sciences

G. Ghibaudo , T. Skotnicki

Elsevier Sciences. Special issue of selected papers from "35th ESSDERC Conference", volume 50, Elsevier Sciences, Guest editors, pp.volume 50, 2006

Chapitre d'ouvrage hal-00148996v1

Proceedings of the 35th European Solid-State Device Research Conference (ESSDERC 05)

G. Ghibaudo , T. Skotnicki , S. Cristoloveanu , M. Brillouet

Proceedings of the 35th European Solid-State Device Research Conference (ESSDERC 05), IEEE/Color Press, pp.XX, 2005

Chapitre d'ouvrage hal-00148991v1

Electron and Hole Mobility in Semiconductor Devices

Gérard Ghibaudo

Ed. by J. G. Webster. Wiley Encyclopedia of Electrical and Electronics Engineering, John Wiley & Sons, Inc., 1999, 9780471346081. ⟨10.1002/047134608X.W3148⟩

Chapitre d'ouvrage hal-02061260v1

Low Temperature Electrical Characteristics of Si Nanonet Field Effect Transistors

T. Cazimajou , M. Legallais , T.T.T. Nguyen , Mireille Mouis , C. Ternon et al.

2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Apr 2019, Grenoble, France. IEEE, pp.1-4, 2020, ⟨10.1109/EUROSOI-ULIS45800.2019.9041882⟩

Proceedings/Recueil des communications hal-04925576v1

Low-frequency Noise Characterization of Si Nanonet Field Effect Transistors

Thibauld Cazimajou , Christoforos Theodorou , Thuy Thi Nguyen , Maxime Legallais , Mireille Mouis et al.

25th International Conference on Noise and Fluctuations (ICNF), Jun 2019, Neuchatel, Switzerland. ICLAB, p180-183, 2019, ⟨10.5075/epfl-ICLAB-ICNF-269289⟩

Proceedings/Recueil des communications hal-04925581v1
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NH 3 treatments of Hf-based layers for application as NVM active dielectrics

Marc Bocquet , G. Molas , E. Martínez , H. Grampeix , F. Martin et al.

IEEE Semiconductor Interface Specialists Conference (SISC), Dec 2007, Arlington, United States

Poster de conférence hal-01745607v1