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Measurement of minority carrier diffusion length in p -GaN using electron emission spectroscopy (EES)
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Ultrafast dynamics of hot carriers in a quasi–two-dimensional electron gas on InSe
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Amina Taleb-Ibrahimi
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Evidence for trap-assisted Auger recombination in MBE grown InGaN quantum wells by electron emission spectroscopy
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Transmission of high-energy electrons through metal-semiconductor Schottky junctions
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Direct measurement of hot-carrier generation in a semiconductor barrier heterostructure: Identification of the dominant mechanism for thermal droop
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Identification of low-energy peaks in electron emission spectroscopy of InGaN/GaN light-emitting diodes
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Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy
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Polarized Luminescence of Anisotropic LaPO 4 :Eu Nanocrystal Polymorphs
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Philippe Goldner
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Oscar Malta
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Ultrafast electron dynamics reveal the high potential of InSe for hot-carrier optoelectronics
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Localization landscape theory of disorder in semiconductors. II. Urbach tails of disordered quantum well layers
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James Speck
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Localization landscape theory of disorder in semiconductors. III. Application to carrier transport and recombination in light emitting diodes
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Svitlana Mayboroda
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Monitoring the orientation of rare-earth-doped nanorods for flow shear tomography
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Sébastien Michelin
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Michiel Hilbers
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Lucio Martinelli
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Elodie Chaudan
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Injection energy dependence of spin-polarized hot-electron transport through a ferromagnetic metal / oxide / semiconductor junction
Nicolas Rougemaille
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Driss Lamine
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G. Lampel
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Y. Lassailly
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J. Peretti
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2008, 77, pp.094409
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Apertureless near-field optical microscopy: A study of the local tip field enhancement using photosensitive azobenzene-containing films
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The formation of the Pb/Si(111) interface studied by in situ ellipsometry and surface spectroscopy
G Quentel
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G Gauch
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Alain Jean Degiovanni
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W Yang
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