Jean-Christophe Nallatamby

138
Documents

Publications

Publications

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Multi-scale and Multi-physics Analysis Of a GaN System in Package Using Fan Out Wafer Level Packaging (FO-WLP) Technology

N'Doua Luc Arnaud Kakou , José Anderson Silva , Raphael Sommet , Vincent Bortolussi , Anass Jakani et al.
31st International Workshop on Thermal Investigations of ICs and Systems (THERMINIC 2025), Sep 2025, Naples, Italy
Communication dans un congrès hal-05297916 v1

Multiscale thermal and thermomechanical analysis of a SiP using Fan Out Wafer Level Packaging (FO-WLP) technology

N’doua Luc Arnaud Kakou , Raphaël Sommet , Vincent Bortolussi , Anass Jakani , Jean-Christophe Nallatamby
18eme European Advanced Technology Workshop on Micropackaging and Thermal management, IMAPS, Mar 2025, La Rochelle, France
Communication dans un congrès hal-05029052 v1
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Une nouvelle méthode d'étalonnage rapide pour un banc de mesure de la linéarité basé sur des NVNAs

José Anderson Silva dos Santos , Tibault Reveyrand , Florent Gaillard , Pierre Medrel , Christophe Chang et al.
XXIIIèmes Journées Nationales Microondes, Université Côte d'Azur, Jun 2024, Antibes, France
Communication dans un congrès hal-04724467 v1
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Estimation de l’énergie d’activation réelle sous champ nul d’un piège dans la zone tampon des transistors HEMT dopés Fe

Florent Gaillard , Vaidehi Vijay Painter , P. Vigneshwara Raja , Emmanuel Dupouy , Raphaël Sommet et al.
Journées nationales microondes, Jun 2024, Antibes (France), France
Communication dans un congrès hal-04780965 v1
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Investigation of Thermal Resistance Extraction of GaN HEMTs through DCT Measurements Techniques and TCAD-Based Physical Simulations

M. Bouslama , J.C. Jacquet , F. Gaillard , S. Piotrowicz , Raphaël Sommet et al.
2024 19th European Microwave Integrated Circuits Conference (EuMIC), Sep 2024, Paris, France. pp.178-181, ⟨10.23919/EuMIC61603.2024.10732560⟩
Communication dans un congrès hal-04920459 v1
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Impact of GaN Cap Layer and Carbon-Doped Buffer Layer on Thermal Resistance of HEMTs GaN

Khalil Karrame , Sujan Sarkar , Khade Ramdas Pandurang , Jean-Christophe Nallatamby , Amitava Dasgupta et al.
2024 30th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC), Sep 2024, Toulouse, France. pp.1-4, ⟨10.1109/THERMINIC62015.2024.10732655⟩
Communication dans un congrès hal-04774322 v1
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Modélisation cohérente d'un HEMT AlGaN/GaN de 0.15μm basés sur l'approche ASM-HEMT en prenant en compte la thermique et les pièges

A Santos , Jean-Christophe Nallatamby , Raphaël Sommet , Florent Gaillard , Christophe Chang
XXIII èmes Journées Nationales MicroOndes, Jun 2024, Antibes - Juan les Pins, France
Communication dans un congrès hal-04746963 v1
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Inspection of Trapping and Detrapping Dynamics in Fe-and C-doped GaN-based RF HEMTs by Filling Pulse-Dependent DCT Spectroscopy

P. Vigneshwara Raja , Vaidehi Vijay Painter , Raphaël Sommet , Jean-Christophe Nallatamby
8th IEEE Devices Technology and Manufaturing Conference (EDTM 2024), Mar 2024, Bengalore, India
Communication dans un congrès hal-04519744 v1
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Inspection of Trapping and Detrapping Dynamics in Fe-and C-doped GaN-based RF HEMTs by Filling Pulse-Dependent DCT Spectroscopy

P. Vigneshwara Raja , Vaidehi Vijay Painter , Raphaël Sommet , Jean-Christophe Nallatamby
2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), Mar 2024, Bangalore, France. pp.1-3, ⟨10.1109/EDTM58488.2024.10511773⟩
Communication dans un congrès hal-04774086 v1
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Transient thermal simulation of a SiP FO-WLP embedding a GaN power amplifier

N’doua Luc Arnaud Kakou , Raphaël Sommet , Anass Jakani , Khalil Karrame , Laurent Brunel et al.
2024 30th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC), Sep 2024, Toulouse, France. pp.1-6, ⟨10.1109/THERMINIC62015.2024.10732885⟩
Communication dans un congrès hal-04774334 v1

Combination of thermal measurements and simulation to extract the hotspot temperature of GaN HEMT transistors

Khallil Karrame , Raphaël Sommet , Christophe Chang , Maggy Colas , Jean-Christophe Nallatamby
C'NANO 2023, C'NANO, Mar 2023, Poitiers, France
Communication dans un congrès hal-04997876 v1

A novel fast calibration method for NVNAs based linearity setup

J. dos Santos , T. Reveyrand , F. Gaillard , P. Medrel , J-M. Nebus et al.
2023 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC), Nov 2023, Aveiro, France. pp.1-4, ⟨10.1109/INMMIC57329.2023.10321796⟩
Communication dans un congrès hal-04594834 v1

Identification of Surface Traps and Buffer Trapping Induced Reduction in 2DEG of GaN-based HEMTs

Jean-Christophe Nallatamby , Vigneshwara Raja Paramasivan , Raphaël Sommet
Identification of Surface Traps and Buffer Trapping Induced Reduction in 2DEG of GaN-based HEMTs, Feb 2023, Chennai, India
Communication dans un congrès hal-04195043 v1

Advanced measurement techniques for GaN-based HEMTs: Trap investigation and innovative linearity characterization

Jose Anderson Silva dos Santos , Florent Gaillard , P. Vigneshwara Raja , Michel Prigent , Raphaël Sommet et al.
XXII International Workshop on Physics of Semiconductor Devices, IIT Madras, Dec 2023, Chennai (India), France
Communication dans un congrès hal-04351536 v1

Thermal characterization of AlGaN/GaN HEMTs using thermoreflectance method

Raphaël Sommet , Jean-Christophe Nallatamby
Indo-French Workshop on Microwave and Photonic Technologies, IIT Madras, Feb 2023, Chennai, India
Communication dans un congrès hal-04194954 v1
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Estimation of thermal resistance (RTH) and thermal time constant for AlGaN/GaN HEMTs using TCAD simulation

Vaidehi Vijay Painter , Jean-Christophe Nallatamby , Raphaël Sommet , P. Vigneshwara Raja
XXII International Workshop on Physics of Semiconductor Devices, IIT Madras, Dec 2023, Madras, India
Communication dans un congrès hal-04351449 v1
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Thermoreflectance Measurement: Effect of GaN Cap Layer and Carbon Doped Buffer Layer on Thermal Resistance of HEMTs

Sujan Sarkar , Khallil Karrame , Khade Ramdas Pandurang , Florent Gaillard , Jean-Christophe Nallatamby et al.
XXII International Workshop on Physics of Semiconductor Devices, Dec 2023, Chennai (India), India
Communication dans un congrès hal-04351485 v1
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Etude de l’« Advanced Spice Model » pour la modélisation des transistor HEMT GaN

Alexandre Santos , Julien Frederic , Florent Gaillard , Jean-Christophe Nallatamby , Christopher Chang et al.
XXIIèmes Journées Nationales Microondes, Jun 2022, Limoges, France
Communication dans un congrès hal-03745063 v1
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Evaluation of Trap Signatures in Fe-doped 0.12 µm InAlN/GaN HEMTs by DCT, Y22 and Y21 Techniques

P. Vigneshwara Raja , Emmanuel Dupouy , Raphaël Sommet , Jean-Christophe Nallatamby
6th IEEE International Conference on Emerging Electronics (ICEE-2022), Dec 2022, Bangalore, India
Communication dans un congrès hal-04180970 v1
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Mesure de température par une méthode de thermoréflectance multispectrale

Samuel Lozachmeur , Anass Jakani , Noël Richard , Raphaël Sommet , Jean-Christophe Nallatamby
XXIIèmes Journées Nationales Microondes (JNM) 2022, Jun 2022, Limoges, France
Communication dans un congrès hal-03745093 v1
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Mesure temporelle de la température des dispositifs micro-ondes par thermoréflectance

Anass Jakani , Khallil Karrame , Raphaël Sommet , Jean-Christophe Nallatamby
XXIIèmes Journées Nationales Microondes, Jun 2022, Limoges, France
Communication dans un congrès hal-03745096 v1
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Thermal Simulation and Characterization of GaN HEMT using Gate Resistance Thermometry and Thermoreflectance imaging

Khalil Karrame , Anass Jakani , Luc Kakou , Christophe Chang , Maggy Colas et al.
2022 IEEE MTT-S International Conference on Electromagnetic and Multiphysics Modeling and Optimization (NEMO2022), Jul 2022, Limoges, France
Communication dans un congrès hal-03746163 v1
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HTRB Stress Effects on 0.15 µm AlGaN/GaN HEMT Performance

P.V. Raja , Jean-Christophe Nallatamby , Mohamed Bouslama , Jean-Claude Jacquet , Raphaël Sommet et al.
2022 IEEE MTT-S International Conference on Electromagnetic and Multiphysics Modeling and Optimization (NEMO2022), Jul 2022, Limoges, France
Communication dans un congrès hal-03746165 v1
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La thermique des transistors GaN en régime transitoire : Théorie et mesures

Anass Jakani , Khalil Karrame , Luc Kakou , Raphaël Sommet , Jean-Christophe Nallatamby
XXIIèmes Journées Nationales Microondes, Jun 2022, Limoges, France
Communication dans un congrès hal-03745103 v1
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GaN HEMTs thermal time constants: Theory and Measurements

Anass Jakani , Raphaël Sommet , K. Karrame , Jean-Christophe Nallatamby
23rd International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE) 2022, Apr 2022, St Julian, Malta. pp.1-5, ⟨10.1109/EuroSimE54907.2022.9758888⟩
Communication dans un congrès hal-03745004 v1

High frequency GaN HEMT Modeling with ASM-HEMT

Raphaël Sommet , Jose Anderson Silva dos Santos , Alexandre Santos , Jean-Christophe Nallatamby
17th European Microwave Integrated Circuits Conference (EuMiC), Sep 2022, Milan, Italy
Communication dans un congrès hal-03814218 v1

Surface and Buffer Trap Signatures in Fe-doped AlGaN/GaN HEMT Identified by LF S-parameter TCAD Simulations

Jean-Christophe Nallatamby , Jose Anserson Silva dos Santos , P. Vigneshwara Raja , Mohamed Bouslama , Raphaël Sommet
17th European Microwave Integrated Circuits Conference (EuMiC), Sep 2022, Milan, Italy
Communication dans un congrès hal-03812830 v1

Trap Characterization in InAlN/GaN and AlN/GaN based HEMTs with Fe- and C-doped Buffers

Emmanuel Dupouy , P. Vigneshwara Raja , Florent Gaillard , Raphaël Sommet , Jean-Christophe Nallatamby
2021 16th European Microwave Integrated Circuits Conference (EuMIC), Apr 2022, London, United Kingdom. pp.197-200, ⟨10.23919/EuMIC50153.2022.9783939⟩
Communication dans un congrès hal-03745009 v1
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Effets du dopage fer et carbone dans la zone tampon GaN sur les constantes de temps de pièges dans les HEMT

Jose Anderson Silva dos Santos , Emmanuel Dupouy , Florent Gaillard , P.V. Raja , Guillaume Callet et al.
XXIIèmes Journées Nationales Microondes (JNM) 2022, Jun 2022, Limoges, France
Communication dans un congrès hal-03745041 v1
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Identification des pièges de surface et dans la zone tampon GaN des transistors HEMT dopés Fe

Mohamed Bouslama , Florent Gaillard , P.V. Raja , Emmanuel Dupouy , Christophe Chang et al.
XXIIèmes Journées Nationales Microondes, Jun 2022, Limoges, France
Communication dans un congrès hal-03745526 v1
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Comparison of GaN HEMTs Thermal Results through Different Measurements Methodologies: Validation with 3D Simulation

Anass Jakani , Raphaël Sommet , Florent Gaillard , Jean-Christophe Nallatamby
Thermal Investigations of ICs and Systems (THERMINIC), Sep 2021, Berlin, Germany
Communication dans un congrès hal-03432574 v1

Impact of the Location of Iron Buffer Doping on Trap Signatures in GaN HEMTs

Khushboo Sharma , Emmanuel Dupouy , Mohamed Bouslama , Raphaël Sommet , Jean-Christophe Nallatamby
2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC), Jul 2020, Cardiff, United Kingdom. pp.1-3, ⟨10.1109/INMMiC46721.2020.9160114⟩
Communication dans un congrès hal-02968583 v1

Dual Approach for the characterization of the thermal impedance using 3omega and thermoreflectance methods

Anass Jakani , Raphaël Sommet , Jean-Christophe Nallatamby , Christophe Charbonniaud
2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC), Jul 2020, Cardiff, United Kingdom. pp.1-3, ⟨10.1109/inmmic46721.2020.9160092⟩
Communication dans un congrès hal-02968581 v1

Thermal characterization of AlGaN/GaN HEMT using thermoreflectance method

Raphaël Sommet , Anass Jakani , Jean-Christophe Nallatamby
IMAPS 15 th Workshop on Thermal Management 2020, Feb 2020, La Rochelle, France
Communication dans un congrès hal-02532985 v1

Thermal Modeling Methodology of RF Power Devices to Improve System Level Simulations

Raphaël Sommet , Jean-Christophe Nallatamby , Sébastien Mons , Edouard Ngoya
14th European Microwave Microwave Conference, Sep 2019, Paris, France
Communication dans un congrès hal-02422398 v1

Drain Current Recovery Time Analyses of InAlGaN/GaN HEMTs Realized with a Back-Barrier Buffer Layer

S. Piotrowicz , C. Potier , J.C. Jacquet , J.C. Nallatamby , Michel Prigent et al.
2019 14th European Microwave Integrated Circuits Conference (EuMIC), Sep 2019, Paris, France. pp.41-44, ⟨10.23919/EuMIC.2019.8909641⟩
Communication dans un congrès hal-02460407 v1

Linearity and Efficiency Characterization of AlGaN/GaN and InAlGaN/GaN HEMTs devices using Multi-tone Large Signal Measurements

V. Gillet , M. Bouslama , S. Piotrowicz , C. Potier , O. Patard et al.
2019 49th European Microwave Conference (EuMC), Oct 2019, Paris, France. pp.567-570, ⟨10.23919/EuMC.2019.8910734⟩
Communication dans un congrès hal-02460432 v1

Trapping Investigation of the GaN HEMT Devices Using the Low Frequency Noise Characterization

Mohamed Bouslama , Jean-Christophe Nallatamby , Michel Prigent
25th International Conference on Noise and Fluctuations - ICNF 2019, Jun 2019, Neufchâtel, Switzerland
Communication dans un congrès hal-02458632 v1

Etude des pièges dans les transistors HEMT et MIS-HEMT sur substrat saphir

Mohamed Bouslama , Srikanth Kanaga , Nandita Dasgupta , Jean-Christophe Nallatamby , Amitava Dasgupta
XXIèmes Journées Nationales Microondes, May 2019, Caen, France
Communication dans un congrès hal-02458637 v1

Time Domain Drain Lag Measurement and TCAD based Device Simulations of AlGaN/GaN HEMT: Investigation of Physical Mechanism

Nandha Kumar Subramani , Mohamed Bouslama , Raphaël Sommet , Jean-Christophe Nallatamby
2019 14 th European Microwave Conference, Oct 2019, PARIS, France
Communication dans un congrès hal-02141245 v1

Characterization of Deep-Level Traps in AlInN/GaN HEMTs by I-DLTS and Output Admittance Dispersion

Vigneshwara Raja Paramasivan , Mohamed Bouslama , S. Sarkar , K.R. Pandurang , K. Narang et al.
XXth International Workshop on Physics of Semiconductor Devices (IWPSD2019), Dec 2019, Kolkata, India
Communication dans un congrès hal-02458642 v1

Comparaison de la linéarité de 2 technologies AlGaN/GaN HEMTs en utilisant un signal USMT

Vincent Gillet , Mohamed Bouslama , Christophe Chang , Charles Teyssandier , J.C. Nallatamby et al.
21èmes Journées Nationales Micro-Ondes, May 2019, Caen, France
Communication dans un congrès hal-02460553 v1

Characterization of Different Technologies of GaN HEMTs of 0,15 µm Ultra-Short Gate Length: Identification of Traps Using TCAD Based 2D Physics-based Simulation

Mohamed Bouslama , Raphaël Sommet , Jean-Christophe Nallatamby
2019 14th European Microwave Microwave Conference, Oct 2019, PARIS, France
Communication dans un congrès hal-02141233 v1

Model Order Reduction for thermal FE Analysis and global electrothermal approach

Raphaël Sommet , Jean-Christophe Nallatamby , Edouard Ngoya , Sébastien Mons
IMAPS 14 th Workshop on Thermal Management 2019, Feb 2019, LA ROCHELLE, France
Communication dans un congrès hal-02141267 v1

Extraction de la signature des pièges sur les HEMT GaN à courte longueur de grille en utilisant deux techniques de mesures différentes

Mohamed Bouslama , Christophe Chang , Raphaël Sommet , Jean-Christophe Nallatamby
Journées Nationales Microondes 2019, May 2019, CAEN, France
Communication dans un congrès hal-02141194 v1

Technologie InAlGaN/GaN/SiC à faibles effets mémoires délivrant 10W/mm à 30 GHz

Stéphane Piotrowicz , O. Patard , P. Gamarra , Clément Potier , E. Chartier et al.
21èmes Journées Nationales Micro-Ondes, May 2019, –Caen, France
Communication dans un congrès hal-02460542 v1

Low Frequency Drain Noise Characterization of Different Technologies of GaN HEMTs:Investigation of Trapping Mechanism

Mohamed Bouslama , Ahmad Al Hajjar , Sylvain Laurent , Nandha Kumar Subramani , Jean-Christophe Nallatamby et al.
2018 International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMIC), Jul 2018, Brive La Gaillarde, France. pp.1-3, ⟨10.1109/INMMIC.2018.8430029⟩
Communication dans un congrès hal-02457166 v1

On-wafer time-domain measurement of pulse-to-pulse stability and multi-tones load-pull characterization of linearity to improve the nonlinear modeling of thermal/trapping effects in power GaN HEMTs for radar and telecom applications

Denis Barataud , Michel Campovecchio , Audrey Martin , Pierre Medrel , Neveux Guillaume et al.
EuMW 2018, Sep 2018, MAdrid, Spain
Communication dans un congrès hal-02013184 v1

Investigation of Fast and Slow Charge Trapping Mechanisms of GaN/AlGaN HEMTs through Pulsed I-V Measurements and the Associated New Trap Model

Julien Couvidat , Nandha Kumar Subramani , Vincent Gillet , Sylvain Laurent , Christophe Charbonniaud et al.
2018 International Microwave Symposium (IMS2018), IEEE, Jun 2018, Philadelphia, United States. ⟨10.1109/MWSYM.2018.8439142⟩
Communication dans un congrès hal-01828885 v1

Novel AlN/GaN HEMT Electrical Model including Trapping Effects

Mohamed Bouslama , Julien Couvidat , Ahmad Al Hajjar , Raphaël Sommet , Jean-Christophe Nallatamby
INMMIC 2018 : International Workshop On Integrated Nonlinear Microwave and Millimetre-wave Circuits, Jul 2018, Brive la Gaillarde, France
Communication dans un congrès hal-01837070 v1
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Characterization and Electrical Modeling Including Trapping Effects of AIN/GaN HEMT 4×50μm on Silicon Substrate

Mohamed Bouslama , Ahmad Al Hajjar , Raphaël Sommet , Jean-Christophe Nallatamby , F Medjdoub
13th European Microwave Integrated Circuits Conference (EuMIC 2018), Sep 2018, Madrid, Spain. pp.333-336, ⟨10.23919/EuMIC.2018.8539941⟩
Communication dans un congrès hal-02356757 v1

Noise sources characterization and its compact modeling based on physical device simulations for designing low phase noise oscillators

Jean-Christophe Nallatamby , Michel Prigent , David Cordeau , Jean-Marie Paillot
Frequency and Time Forum and IEEE International Frequency Control Symposium (EFTF/IFCS), 2017 Joint Conference of the European, IEEE, Jul 2017, Besançon, France. ⟨10.1109/FCS.2017.8088837⟩
Communication dans un congrès hal-01652814 v1
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Caractérisation et modélisation non-linéaire du HEMT AlN/GaN sur substrat silicium et validation par mesure Load-Pull

Ahmad Al Hajjar , Julien Couvidat , Jean-Christophe Nallatamby , Raymond Quéré , F Medjdoub
20èmes Journées Nationales Microondes, May 2017, Saint-Malo, France
Communication dans un congrès hal-01661775 v1
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Identification de pièges dans le buffer des HEMTs AlGaN/GaN basée sur des mesures de paramètres S basse fréquence et sur des simulations physiques

Julien Couvidat , Nandha Kumar Subramani , Ahmad Al Hajjar , Jean-Christophe Nallatamby , Raphaël Sommet et al.
20èmes Journées Nationales Microondes, May 2017, Saint-Malo, France
Communication dans un congrès hal-01661791 v1

Thermal Analysis of AlN/GaN/AlGaN HEMTs grown on Si and SiC Substrate through TCAD Simulations and Measurements

A.K. Sahoo , N.K. Subramani , Jean-Christophe Nallatamby , Raphaël Sommet , R Quéré et al.
Proceedings of the 46st European Microwave Conference, EuMW 2016, 2016, London, UK, United Kingdom. pp
Communication dans un congrès hal-01395028 v1

Systematic study of traps in AlN/GaN/AlGaN HEMTs on SiC substrate by numerical TCAD simulation

N. K. Subramani , A. K. Sahoo , Jean-Christophe Nallatamby , R. Sommet , R. Quere
2016 12th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), Jun 2016, Lisbon, Portugal. pp.1-4, ⟨10.1109/PRIME.2016.7519485⟩
Communication dans un congrès hal-01394909 v1

A physics based analytical model and numerical simulation for current-voltage characteristics of microwave power AlGaN/GaN HEMT

Nandha Kumar Subramani , Jean-Christophe Nallatamby , Amit Kumar Sahoo , Raphaël Sommet , Raymond Quere et al.
2016 IEEE MTT-S International Microwave and RF Conference (IMaRC), Dec 2016, New Delhi, France. ⟨10.1109/IMaRC.2016.7939610⟩
Communication dans un congrès hal-01935799 v1

Characterization and modeling of large signal dynamics of GaN HEMTs

Raymond Quéré , Jean-Christophe Nallatamby , Sylvain Laurent , Agostino Benvegnu , Denis Barataud
2015 Asia-Pacific Microwave Conference (APMC), IEEE, Dec 2015, Nanjing, China. pp.1-2, ⟨10.1109/APMC.2015.7411743⟩
Communication dans un congrès hal-01286559 v1

Temperature dependent contact and channel sheet resistance extraction of GaN HEMT.

A.K. Sahoo , N.K. Subramani , Jean-Christophe Nallatamby , N. Rolland , Raymond Quéré et al.
INMMIC, Oct 2015, Taormina, Italy
Communication dans un congrès hal-01285706 v1

Analyse du bruit GR dû aux pièges dans le THB InGaP/GaAs par simulation physique du composant et mesures du bruit BF.

Ahmad Al Hajjar , Sylvain Laurent , Jean-Christophe Nallatamby , Michel Prigent
19èmes Journées Nationales Microondes (JNM), Jun 2015, Bordeaux, France
Communication dans un congrès hal-01285783 v1

Comprehensive Analysis of traps in InGaP/GaAs HBT by GR noise.

Ahmad Al Hajjar , Jean-Christophe Nallatamby , Michel Prigent
10th Conference on Ph.D. Research In Microelectronics and Electronics, PRIME, Jun 2014, Grenoble, France
Communication dans un congrès hal-01285751 v1

Location and origin of traps in InGaP-GaAs by GR noise measurement and simulation

Jean-Christophe Nallatamby , Ahmad Al Hajjar , Sylvain Laurent , Michel Prigent
IMARC, Dec 2014, Bangalore, India
Communication dans un congrès hal-01285724 v1
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High frequency-low loss SAW resonators built on NanoCrystalline Diamond-based substrate

L. Braun , P. Boillot , S. Renaud , E. Girardet , G. Martin et al.
European Frequency and Time Forum (EFTF), Jun 2014, Neuchâtel, Switzerland. pp.7331482, ⟨10.1109/EFTF.2014.7331482⟩
Communication dans un congrès hal-01285775 v1

Characterization and Simulation of Traps in InGaP/GaAs HBT by GR Noise Analysis.

Ahmad Al Hajjar , Jean-Christophe Nallatamby , Michel Prigent , Jean-Claude Jacquet
European Microwave Integrated Circuits Conference, Oct 2014, Roma, Italy
Communication dans un congrès hal-01285731 v1

Characterization of Low Frequency Noise on InGaP/GaAs HBT Transistors at Low and High Level Injection up to 10 MHz

Ahmad Al Hajjar , Khaled Abdelhadi , Jean-Christophe Nallatamby , Michel Prigent
IEEE- Mediterranean Microwave Symposium, Sep 2013, Saida, Lebanon
Communication dans un congrès hal-00914668 v1

Numerical Simulation of LF Noise in Semiconductor Device Using the Transmission-Line Equivalent Circuit of Carrier Transport Model

Khaled Abdelhadi , Jean-Christophe Nallatamby , Jean-Claude Jacquet , Michel Prigent
International Conference on Noise and Fluctuations, Jun 2013, Montpellier, France
Communication dans un congrès hal-00914666 v1

Méthode rigoureuse de simulation du bruit GR assisté par piège dans les composants semi-conducteurs : Application à des TBH en technologie GaInP/GaAs

Khaled Abdelhadi , Ahmad Al Hajjar , Jean-Christophe Nallatamby , Jean-Claude Jacquet , Sylvain Delage et al.
18èmes Journées Nationales Microondes, May 2013, Paris, France
Communication dans un congrès hal-00914669 v1

A Comparison of 2-D Simulations and Measurements of Low Frequency Noise on InGaP/GaAs HBT Transistors at Low and High Level Injection

Khaled Abdelhadi , Ahmad Al Hajjar , Jean-Christophe Nallatamby , Jean-Claude Jacquet , Sylvain Delage et al.
International Conference on Noise and Fluctuations, Jun 2013, Montpellier, France
Communication dans un congrès hal-00914665 v1

Simulation du bruit BF dans les composants semi-conducteurs à l'aide de la représentation électrique distribuée des équations physiques de dérive-diffusion.

Khaled Abdelhadi , Jean-Christophe Nallatamby , Jean-Claude Jacquet , Michel Prigent
18èmes Journées Nationales Microondes, May 2013, Paris, France
Communication dans un congrès hal-00914670 v1

Conception d'un circuit oscillateur MMIC à OCT commutes à large bande d'accord pour des applications spatiales

Nazem Chamaa , Michel Prigent , Jean-Christophe Nallatamby , Dominique Langrez , Sébastien Gribaldo et al.
Journées Nationales Microondes, May 2011, Brest, France. pp.Session 8C-4
Communication dans un congrès hal-00704035 v1

A wideband MMIC oscillator in S-band with 2 switched GaAs HBT VCOs for spatial applications

Nazem Chamaa , Michel Prigent , Jean-Christophe Nallatamby , Dominique Langrez , Sébastien Gribaldo
Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC), Apr 2011, Vienne, Austria. pp.1-4, ⟨10.1109/INMMIC.2011.5773338⟩
Communication dans un congrès hal-00704029 v1

Non linear model of InP/GaAsSb/InP DHBT process for design of a Q-Band MMIC oscillator

Sylvain Laurent , Guillaume Callet , Jean-Christophe Nallatamby , Michel Prigent , Virginie Nodjiadjim et al.
Microwave Integrated Circuits Conference (EuMIC), Paris : France (2010), Sep 2010, Paris, France
Communication dans un congrès hal-00914672 v1

Design and fabrication of a 45GHz MMIC oscillator based on InP/GaAsSb/InP DHBT process

Sylvain Laurent , Antonio Augusto Lisboa de Souza , Jean-Christophe Nallatamby , Michel Prigent , Virginie Nodjiadjim et al.
Workshop on (INMMIC) 2010, Apr 2010, Göteborg, Sweden. pp.54-57, ⟨10.1109/INMMIC.2010.5480139⟩
Communication dans un congrès hal-00606461 v1

On The Determination of the Thermal Impedance of Microwave Bipolar Transistors

Raphaël Sommet , A.A.L. de Souza , Alain Xiong , Juan Obregon , Jean-Christophe Nallatamby et al.
Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm), 2010 The Twelveth Intersociety Conference, Jun 2010, Las Vegas, United States. pp.1 - 8, ⟨10.1109/ITHERM.2010.5501346⟩
Communication dans un congrès hal-00623728 v1

Modélisation non-linéaire de TBH InP/GaAsSb/InP et validation par mesures de load-pull à 40 GHz

S. Laurent , A.A. Lisboa de Souza , Jean-Christophe Nallatamby , Michel Prigent , M. Werquin et al.
16èmes Journées Nationales Microondes, JNM 2009, 2009, France. pp.5E-15, 1-4
Communication dans un congrès hal-00480441 v1

Nonlinear HBT noise modelling and applications

Jean-Christophe Nallatamby , Emmanuel Dupouy , J. Portilla , Michel Prigent , Juan Obregon
European Microwave Week Workshop, Sep 2009, Rome, Italy
Communication dans un congrès hal-00707472 v1

Modèle non-linéaire de TBH InP/GaAsSb/InP et validation par mesures de load-pull à 40 GHz

Sylvain Laurent , Antonio Augusto Lisboa de Souza , Jean-Christophe Nallatamby , Michel Prigent , M. Werquin et al.
16èmes Journées Nationales Microondes (JNM 2009), May 2009, Grenoble, France. pp.5E-15
Communication dans un congrès hal-00707450 v1

Stability of Nonlinear Microwave Circuits and Systems: Concepts, Analysis, and Design

Sébastien Mons , Tibault Reveyrand , Tony Gasseling , Jean-Christophe Nallatamby , Raymond Quéré et al.
IMS workshop, Jun 2009, Boston, United States
Communication dans un congrès hal-00707479 v1

Oscillateur MMIC fonctionnant à 45GHz à base de transistor TBH InP/GaAsSb/InP

Sylvain Laurent , Jean-Christophe Nallatamby , Michel Prigent , M. Riet , P. Berdaguer
16èmes Journées Nationales Microondes, May 2009, Grenoble, France. pp.6C-7
Communication dans un congrès hal-00707442 v1

V-Band Amplifier MMICs Using Multi-Finger InP/GaAsSb DHBT Technology

J. Godin , V. Nodjiadjim , M. Riet , P. Berdaguer , S. Piotrowicz et al.
31st IEEE Compound Semiconductor Integrated Circuit Symposium, CSISC 2009, Oct 2009, Greensboro - Caroline du Nord, United States. pp.1-4, ⟨10.1109/csics.2009.5315658⟩
Communication dans un congrès hal-00474497 v1

Conception et Réalisation d'un Oscillateur Bande X à Très Faible Bruit de Phase

Emmanuel Dupouy , Jean-Christophe Nallatamby , Michel Prigent , C. Laporte , Y. Mancuso
16èmes JNM, May 2009, Grenoble, France. pp.Article n°6C-7
Communication dans un congrès hal-00707428 v1

Advances on modelling and characterization of microwave devices at XLIM laboratory

Jean-Christophe Nallatamby , Juan Obregon , Jean-Michel Nebus , Michel Prigent , Raymond Quéré
Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits. INMMIC 2008, Nov 2008, Malaga, Spain. pp.3-6, ⟨10.1109/INMMIC.2008.4745699⟩
Communication dans un congrès hal-00707378 v1

A low power, low phase noise 10 GHz MIC oscillator

Emmanuel Dupouy , Jean-Christophe Nallatamby , Michel Prigent , C. Laporte
Frequency Control Symposium, 2008 IEEE International, May 2008, Honolulu, Hawaii, United States. pp.312 - 315
Communication dans un congrès hal-00707347 v1

A new experimental method to characterize cyclostationary noise models of bipolar devices

Antonio Augusto Lisboa de Souza , Jean-Christophe Nallatamby , Michel Prigent , Juan Obregon
Frequency Control Symposium, 2008 IEEE International, May 2008, Honolulu (Hawaï), United States. pp.165 - 169, ⟨10.1109/FREQ.2008.4622981⟩
Communication dans un congrès hal-00707370 v1

On the Cyclostationary Properties of the 1/f Noise of Microwave Semiconductor Devices

Antonio Augusto Lisboa de Souza , Jean-Christophe Nallatamby , Michel Prigent , Juan Obregon
Microwave Symposium Digest, 2008 IEEE MTT-S International, Jun 2008, Atlanta, United States. pp.1569 - 1572, ⟨10.1109/MWSYM.2008.4633082⟩
Communication dans un congrès hal-00707144 v1

A Methodology to Characterize the Low-Frequency Noise of InP Based Transistors

Antonio Augusto Lisboa de Souza , Jean-Christophe Nallatamby , Michel Prigent
Microwave Integrated Circuit Conference, 2008. EuMIC 2008. European, Oct 2008, Amsterdam, France. pp.123 - 126, ⟨10.1109/EMICC.2008.4772244⟩
Communication dans un congrès hal-00707157 v1

Conception d'une chaîne de communications à sauts de fréquences chaotiques

S. Obert , A. Layec , Jean-Christophe Nallatamby , Raymond Quéré
15èmes Journées Nationales Microndes, May 2007, TOULOUSE, France
Communication dans un congrès hal-00194524 v1

Impact of self-heating in lf noise measurements with voltage amplifiers.

Antonio Augusto Lisboa de Souza , Jean-Christophe Nallatamby , Michel Prigent , Juan Obregon
Fluctuations and Noise 2007 Symposium., May 2007, Florence, Italy
Communication dans un congrès hal-00197195 v1

Comparaison des Performances de Bancs de Mesure du Bruit Basse-Fréquence des TBH.

Antonio Augusto Lisboa de Souza , Jean-Christophe Nallatamby , Michel Prigent
15èmes Journées Nationales Microondes., May 2007, TOULOUSE, France
Communication dans un congrès hal-00197452 v1

Modèle non-linéaire et en bruit Basse Fréquence de transistors SiGe pour la conception d'oscillateurs en bande X.

Emmanuel Dupouy , Jean-Christophe Nallatamby , Michel Prigent , C. Laporte
15èmes Journées Nationales Micro-ondes., May 2007, TOULOUSE, France
Communication dans un congrès hal-00196688 v1

Design method and new architecture of sub-harmonic balanced cold FET mixer for MVDS applications

Audrey Martin , Michel Campovecchio , Jean-Christophe Nallatamby , P. Butterworth , Raymond Quéré
Integrated Nonlinear Microwave and Millimeter-wave Circuits (INMMIC), Jan 2006, Aveiro, Portugal. pp.90-93, ⟨10.1109/INMMIC.2006.283517⟩
Communication dans un congrès hal-00077154 v1
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SESSION Invitée 5-1 Avancées dans le domaine des oscillateurs MMIC à faible bruit de phase

Jean-Christophe Nallatamby , Michel Prigent , Raphaël Sommet , Marc Camiade , Raymond Quéré et al.
14 èmes Journées Nationales Microondes, May 2005, Nantes, France
Communication dans un congrès hal-03812825 v1

Overview of research activities on the simulation of High frequency devices, circuits and systems using the Scilab/Scicos Environment

Raphaël Sommet , Raymond Quéré , Edouard Ngoya , Sébastien Mons , Jean-Christophe Nallatamby et al.
Scilab International Conference,, 2004, Rocquencourt, France
Communication dans un congrès hal-01279422 v1

Semiconductor device and noise sources modeling: design methods and tools oriented to nonlinear H.F. oscillator CAD

Jean Nallatamby , Raphaël Sommet , Michel Prigent , Juan Obregon
Second International Symposium on Fluctuations and Noise, 2004, Maspalomas, Spain. pp.373, ⟨10.1117/12.546325⟩
Communication dans un congrès hal-02356458 v1

Ensemble d'outils cohérents pour la simulation physique et la caractérisation du bruit dans les composants semi-conducteurs dédiés à la CAO des circuits microondes non linéaires

Zoheir Riah , Raphaël Sommet , Jean-Christophe Nallatamby , Michel Prigent , Juan Obregon
AS bruit, 2004, La Grande Motte, France
Communication dans un congrès hal-01279423 v1

Modélisation des composants semi-conducteurs et de leurs sources de bruit basse fréquence, outils et méthodes de conception, pour la CAO non linéaire des oscillateurs HF

Jean-Christophe Nallatamby , Raphaël Sommet , Michel Prigent , Juan Obregon
AS bruit, 2004, La Grande Motte, France
Communication dans un congrès hal-01279424 v1

Coherent Tools for Physics-Based Simulation and Characterization of Noise in Semiconductor devices oriented to Nonlinear Microwave Circuit CAD

Jean-Christophe Nallatamby , Raphaël Sommet , Michel Prigent , Juan Obregon
SPIE-2004 - invited paper, 2004, Unknown, Unknown Region
Communication dans un congrès hal-01279421 v1

A balanced sub-harmonic cold FET mixer for 40 GHz communication systems

Peter Butterworth , Christophe Charbonniaud , Michel Campovecchio , Jean-Christophe Nallatamby , M. Monnier et al.
GAAS'2003, Gallium Arsenide Applications Symposium, Oct 2003, Munich, Germany. pp. 105-108, ⟨10.6092/unibo/amsacta/474⟩
Communication dans un congrès hal-01070006 v1

A GaInP/GaAs HBT-based low phase noise oscillator in X band for metrology application

Fabrice Arlot , Ahmed Lyoubi , Jean-Christophe Nallatamby , Vincent Giordano , Patrice Salzenstein et al.
32nd European Microwave Conference, 2002, France. pp.503-506
Communication dans un congrès hal-00022907 v1

Stability analysis of Millimetre-wave circuits. Application to DC-40GHz PHEMT amplifier and Ku-band HBT power amplifier

Michel Campovecchio , Jean-Christophe Nallatamby , Sébastien Mons , Raymond Quéré , Gerard Pataut
30th European Microwave Conference, Oct 2000, Paris, France. pp. 1-4, ⟨10.1109/EUMA.2000.338830⟩
Communication dans un congrès hal-01067001 v1

A general program for steady state, stability, and FM noise analysis of microwave oscillators

J.M. Paillot , J.C. Nallatamby , M. Hessane , R. Quere , M. Prigent et al.
IEEE International Digest on Microwave Symposium, May 1990, Dallas, United States. pp.1287-1290, ⟨10.1109/MWSYM.1990.99814⟩
Communication dans un congrès hal-04435292 v1

MMIC Oscillator Phase Noise Measurement and Simulation using Experimental FET L.F. Noise Data and State of Art CAD Tools

J.M. Paillot , R. Pyndiah , J.C. Nallatamby , A. Guivarc'H , C. Ripoll et al.
20th European Microwave Conference, 1990, Oct 1990, Budapest, France. pp.1207-1212, ⟨10.1109/EUMA.1990.336230⟩
Communication dans un congrès hal-04435331 v1

MMIC Oscillator Phase Noise Measurement and Simulation using Experimental FET L.F. Noise Data and State of Art CAD Tools

Jean-Marie Paillot , Ramesh Pyndiah , Jean-Christophe Nallatamby , A. Guivarc'H , C. Ripoll et al.
20th European Microwave Conference, 1990, Oct 1990, Budapest, France. ⟨10.1109/EUMA.1990.336230⟩
Communication dans un congrès hal-01939089 v1
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Multi-scale and Multi-physics Analysis Of a GaN System in Package Using Fan Out Wafer Level Packaging (FO-WLP) Technology

N'Doua Luc Arnaud Kakou , José Anderson Silva dos Santos , Raphael Sommet , Vincent Bortolussi , Anass Jakani et al.
31st International Workshop on Thermal Investigations of ICs and Systems, Sep 2025, Naples, Italy. pp.208 - 208, 2014, ⟨10.1109/impact.2014.7048396⟩
Poster de conférence hal-05297937 v1
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Thermal multiscale simulation of a FO-WLP SiP including a GaN Power Amplifier

N’doua Luc Arnaud Kakou , Raphael Sommet , Laurent Brunel , Vincent Bortolussi , Benoit Lambert et al.
25th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), Apr 2024, Catania, Italie, Italy. pp.1 - 4, 2024, ⟨10.1109/eurosime60745.2024.10491445⟩
Poster de conférence hal-05209690 v1
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Transient thermal simulation of a SiP FO-WLP embedding a GaN power amplifier

N'Doua Luc Arnaud Kakou , Raphael Sommet , Anass Jakani , Khalil Karrame , Laurent Brunel et al.
30th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC), Sep 2024, Toulouse, France
Poster de conférence hal-05209689 v1

Non linear electrothermal and low frequency noise model of InP/GaAsSb/InP DHBT process for design of Q-band MMIC oscillator.

Jean-Christophe Nallatamby , Sylvain Laurent , Jean-Michel Nebus , Michel Prigent
Workshop on InP DHBT technology activities in Europe , Oct 2015, Paris, France
Poster de conférence hal-01285717 v1

Fe-doping starting depth impacts on static and transient characteristics of AlGaN/GaN HEMTs

Vaidehi Vijay Painter , Raphaël Sommet , Christophe Chang , Valeria Di Giacomo Brunel , Florent Gaillard et al.
Micro and Nanostructures, 2025, pp.208197. ⟨10.1016/j.micrna.2025.208197⟩
Article dans une revue hal-05058025 v1
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Joint Use of Thermal Characterization and Simulation of AlGaN/GaN High-Electron Mobility Transistors in Transient and Steady State Regimes to Estimate the Hotspot Temperature

Khalil Karrame , Christophe Chang , Jean-Christophe Nallatamby , Maggy Colas , Raphaël Sommet
Electronics, 2025, 14 (5), pp.935. ⟨10.3390/electronics14050935⟩
Article dans une revue (article de synthèse) hal-04968500 v1

Fe-Related Trapping and Detrapping Dynamics in AlGaN/GaN HEMTs Inspected by Drain Current Transient (DCT) Spectroscopy

Vaidehi Vijay Painter , Raphaël Sommet , Christophe Chang , Valeria Di Giacomo Brunel , Florent Gaillard et al.
IEEE Transactions on Device and Materials Reliability, 2025, pp.1-1. ⟨10.1109/TDMR.2025.3602857⟩
Article dans une revue hal-05225270 v1
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Electrical characteristics and trap signatures for Schottky barrier diodes on 4H-SiC, GaN-on-GaN, AlGaN/GaN epitaxial substrates

Shikha Kumari , Rashmi Singh , Shivam Kumar , N. V. L. Narasimha Murty , Dominique Planson et al.
Semiconductor Science and Technology, 2024, 39 (6), pp.065016. ⟨10.1088/1361-6641/ad4a65⟩
Article dans une revue hal-04574648 v2
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Influence of Field Plate, Gate Width, and Voltage Dependence of Thermal Resistance ( R TH) for AlGaN/GaN HEMT

Vaidehi Vijay Painter , Raphaël Sommet , Jean-Christophe Nallatamby , P. Vigneshwara Raja
IEEE Transactions on Electron Devices, 2024, 71 (11), pp.6552-6559. ⟨10.1109/TED.2024.3453217⟩
Article dans une revue hal-04773850 v1
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HTRB Stress Effects on Static and Dynamic Characteristics of 0.15 μ m AlGaN/GaN HEMTs

P. Vigneshwara Raja , Jean-Christophe Nallatamby , Mohamed Bouslama , Jean-Claude Jacquet , Raphaël Sommet et al.
IEEE Transactions on Microwave Theory and Techniques, 2023, 71 (5), pp.1957-1966. ⟨10.1109/TMTT.2022.3222190⟩
Article dans une revue hal-04176434 v1
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Estimation of Zero-Field Activation Energy for Traps in Fe-and C-Doped GaN-Based HEMTs

P. Vigneshwara Raja , Vaidehi Vijay Painter , Emmanuel Dupouy , Raphaël Sommet , Jean-Christophe Nallatamby
IEEE Transactions on Electron Devices, In press, ⟨10.1109/TED.2023.3302280⟩
Article dans une revue hal-04183483 v1
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Estimation of Trapping Induced Dynamic Reduction in 2DEG Density of GaN-Based HEMTs by Gate-Lag DCT Technique

P. Vigneshwara Raja , Emmanuel Dupouy , Mohamed Bouslama , Raphaël Sommet , Jean-Christophe Nallatamby
IEEE Transactions on Electron Devices, 2022, 69 (9), pp.4864-4869. ⟨10.1109/TED.2022.3193650⟩
Article dans une revue hal-04682660 v1
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Understanding the Thermal Time Constants of GaN HEMTs through Model Order Reduction Technique

Anass Jakani , Raphaël Sommet , Frédérique Simbélie , Jean-Christophe Nallatamby
Electronics, 2021, 10 (24), pp.3138. ⟨10.3390/electronics10243138⟩
Article dans une revue hal-03485119 v1
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Identification of Buffer and Surface Traps in Fe-Doped AlGaN/GaN HEMTs Using Y21 Frequency Dispersion Properties

P. Vigneshwara Raja , Nandha Kumar Subramani , Florent Gaillard , Mohamed Bouslama , Raphaël Sommet et al.
Electronics, 2021, 10 (24), pp.3096. ⟨10.3390/electronics10243096⟩
Article dans une revue hal-03481937 v1
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Investigation of electron trapping in AlGaN/GaN HEMT with Fe-doped buffer through DCT characterization and TCAD device simulations

Mohamed Bouslama , P. Vigneshwara Raja , Florent Gaillard , Raphaël Sommet , Jean-Christophe Nallatamby
AIP Advances, 2021, 11 (12), pp.125316. ⟨10.1063/5.0064493⟩
Article dans une revue hal-03482467 v1

Deep-Level Traps in AlGaN/GaN- and AlInN/GaN-Based HEMTs With Different Buffer Doping Technologies

P. Vigneshwara Raja , Mohamed Bouslama , Sujan Sarkar , Khade Ramdas Pandurang , Jean-Christophe Nallatamby et al.
IEEE Transactions on Electron Devices, 2020, IEEE Transactions on Electron Devices, 67 (6), pp.2304-2310. ⟨10.1109/TED.2020.2988439⟩
Article dans une revue hal-02560807 v1

An Unequally Spaced Multi-Tone Load–Pull Characterization Technique for Simultaneous Linearity and Efficiency Assessment of RF Power Devices

Vincent Gillet , Mohamed Bouslama , Jean-Pierre Teyssier , Michel Prigent , Jean-Christophe Nallatamby et al.
IEEE Transactions on Microwave Theory and Techniques, 2019, 67 (7), pp.2505-2513. ⟨10.1109/TMTT.2019.2918799⟩
Article dans une revue hal-02457164 v1

Dynamic Performance and Characterization of Traps Using Different Measurements Techniques for the New AlGaN/GaN HEMT of 0.15-μm Ultrashort Gate Length

Mohamed Bouslama , Vincent Gillet , Christophe Chang , Christophe Nallatamby , Raphaël Sommet et al.
IEEE Transactions on Microwave Theory and Techniques, 2019, pp.1-8. ⟨10.1109/TMTT.2019.2907540⟩
Article dans une revue hal-02141154 v1
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Identification of GaN Buffer Traps in Microwave Power AlGaN/GaN HEMTs Through Low Frequency S-Parameters Measurements and TCAD-Based Physical Device Simulations

Nandha Kumar Subramani , Julien Couvidat , Ahmad Al Hajjar , Jean-Christophe Nallatamby , Raphaël Sommet et al.
IEEE Journal of the Electron Devices Society, 2017, 5 (3), pp.175 - 181. ⟨10.1109/JEDS.2017.2672685⟩
Article dans une revue hal-01661741 v1

Low-Frequency Noise Characterization in GaN HEMTs: Investigation of Deep Levels and Their Physical Properties

Nandha Kumar Subramani , Julien Couvidat , Ahmad Al Hajjar , Jean-Christophe Nallatamby , Didier Floriot et al.
IEEE Electron Device Letters, 2017, 38 (8), pp.1109 - 1112. ⟨10.1109/LED.2017.2717539⟩
Article dans une revue hal-01661735 v1

Low Frequency Drain Noise Characterization and TCAD Physical Simulations of GaN HEMTs: Identification and analysis of physical location of traps

Nandha Kumar Subramani , Julien Couvidat , Ahmad Al Hajjar , Jean-Christophe Nallatamby , Raymond Quéré
IEEE Electron Device Letters, 2017, pp.1 - 1. ⟨10.1109/LED.2017.2771407⟩
Article dans une revue hal-01661726 v1

Low Frequency Noise Characterization in GaN HEMTs: Investigation of deep levels andtheir physical properties

Nandha Kumar Subramani , Ahmad Al Hajjar , Jean-Christophe Nallatamby , Michel Prigent , Couvidat Julien et al.
IEEE Electron Device Letters, 2017
Article dans une revue hal-02121545 v1

Characterization of Parasitic Resistances of AlN/GaN/AlGaN HEMTs Through TCAD-Based Device Simulations and On-Wafer Measurements

N. K. Subramani , A. K. Sahoo , Jean-Christophe Nallatamby , R. Sommet , N. Rolland et al.
IEEE Transactions on Microwave Theory and Techniques, 2016, 64 (5), pp.1351-1358. ⟨10.1109/TMTT.2016.2549528⟩
Article dans une revue hal-01394908 v1

Small signal modeling of high electron mobility transistors on silicon and silicon carbide substrate with consideration of substrate loss mechanism

A.K. Sahoo , N.K. Subramani , Jean-Christophe Nallatamby , L. Sylvain , Christophe Loyez et al.
Solid-State Electronics, 2015
Article dans une revue hal-01285677 v1

Comprehensive analysis of GR noise in InGaP–GaAs HBT by physics-based simulation and low frequency characterization

Jean-Christophe Nallatamby , Sylvain Laurent , Michel Prigent , Jean-Claude Jacquet , Didier Floriot et al.
Journal of Computational Electronics, 2014, 13 (4)
Article dans une revue hal-01285693 v1

A Microwave Modeling Oxymoron? : Low-Frequency Measurements for Microwave Device Modeling.

Jean-Christophe Nallatamby , Raphaël Sommet , Sylvain Laurent , Michel Prigent , Raymond Quéré et al.
IEEE Microwave Magazine, 2014
Article dans une revue hal-01285688 v1

Numerical simulation and characterization of trapping noise in InGaP-GaAs heterojunctions devices at high injection

Jean-Christophe Nallatamby , Khaled Abdelhadi , Jean-Claude Jacquet , Michel Prigent , Didier Floriot et al.
Solid-State Electronics, 2013, 81, pp.35-44
Article dans une revue hal-00911139 v1

Characterization and modeling of DHBT in InP/GaAsSb technology for the design and fabrication of a Ka Band MMIC oscillator

Sylvain Laurent , Jean-Christophe Nallatamby , Michel Prigent , Muriel Riet , Virginie Nodjiadjim
Active and Passive Electronic Components, 2012, 2012 (Article ID 796973), 15 p. ⟨10.1155/2012/796973⟩
Article dans une revue hal-00704049 v1

Experimental characterization of the cyclostationary low-frequency noise of microwave semiconductor devices under large signal operation

Antonio Augusto Lisboa de Souza , Emmanuel Dupouy , Jean-Christophe Nallatamby , Michel Prigent , Juan Obregon
International Journal of Microwave and Wireless Technologies, 2010, 2, pp.225-233. ⟨10.1017/S1759078710000140⟩
Article dans une revue hal-00704018 v1

Amplitude and phase noise of magnetic tunnel junction oscillators

M. Quinsat , Daria Gusakova , J.F Sierra , J.P. Michel , Dimitri Houssameddine et al.
Applied Physics Letters, 2010, 97 (182507 (2010)), 3 p. ⟨10.1063/1.3506901⟩
Article dans une revue hal-00703948 v1

A GaInP/GaAs HBT-based low phase noise oscillator in X band for metrology application

F. Arlot , A. Lyoubi , Jean-Christophe Nallatamby , V. Giordano , P. Salzenstein et al.
32nd European Microwave Conference, 2002, EuMC, pp.503-506
Article dans une revue hal-00123074 v1

Simulation techniques of nonlinear circuit dynamic behaviour

Michel Prigent , Jean-Christophe Nallatamby , Edouard Ngoya , Raymond Quéré , Juan Obregon
Annals of Telecommunications - annales des télécommunications, 1996, 51 (9-10), pp.541-552
Article dans une revue hal-00924444 v1

Chapitre 4. Perturbations de l'état établi Introduction. Matrices de conversion. Spectres de bruit de phase et d'amplitude des oscillateurs. Pertes de conversion et facteur de bruit d'un mélangeur à diode. Stabilité des circuits non linéaires.

Michel Prigent , Jean-Christophe Nallatamby , Raymond Quéré
Méthodes d'analyse et propriétés des dispositifs hyperfréquences 2 : techniques d'analyse Traité: EGEM, série électronique et micro-électronique, Hermes Sciences Publications, pp.119-150, 2007
Chapitre d'ouvrage hal-00281099 v1

Chap. IV - High frequency oscillator circuit design

Juan Obregon , Jean-Christophe Nallatamby , Michel Prigent , M. Camiade , D. Rigaud
Michal ODYNIEC. RF and Microwave oscillator design, ARTECH House, pp.93-238, 2002, ISBN 978-1-58053-768-1
Chapitre d'ouvrage hal-00329847 v1