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Efficiency limit of AlGaAs solar cell modified by AlGaSb quantum dot intermediate band embedded outside the depletion region24th EUPVSEC, 2012, Frankfurt, Germany
Communication dans un congrès
hal-01862183v1
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Optical gain calculation of dilute Nitride InAsN/GaSb laser diodes operating in the mid-infraredEMRS Int. Conference, 2009, Strasbourg, France
Communication dans un congrès
hal-01828413v1
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Dilute-Nitride "W" and "M" InAsN/GaSb laser diodes for gaz analysis in the mid-infrared domainMADICA 2008, 2008, Rabat, Morocco
Communication dans un congrès
hal-01825842v1
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Carrier Concentration Control of GaSb/GaInAsSb SystemTHERMOPHOTOVOLTAIC GENERATION OF ELECTRICITY: TPV7: Seventh World Conference on Thermophotovoltaic Generation of Electricity, 2006, Madrid (Spain), France. ⟨10.1063/1.2711727⟩
Communication dans un congrès
hal-01756645v1
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Nitride-based quantum-well lasers on InAs substrate for midwave-infrared emission.14th International Symposium on Nanostructures: Physics and Technology, NANO 2006, 2006, Saint-Petersbourg, Russia. pp.338-339
Communication dans un congrès
hal-00110201v1
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