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Investigation of a sensitive, selective and cost-effective electrochemical meso-porous silicon based gas sensor for NO<sub>2</sub> detection at room temperature
Khaoula Azaiez
,
Hela Mhamdi
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Rabia Benabderrahmane Zaghouani
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Tomas Fiorido
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Jean-Louis Lazzari
et al.
Article dans une revue
hal-04701319
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Growth and characterization of Cu2ZnxFe1-xSnS4 thin films deposited on n-type silicon substrates
M. Sebai
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I. Trabelsi
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G. Bousselmi
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J.-L. Lazzari
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M. Kanzari
Article dans une revue
hal-04311451
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Preparation and characterization of Cu2ZnxFe1−xSnS4 thin films deposited on intrinsic silicon substrates
Marwa Sebai
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Ghada Bousselmi
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Jean-Louis Lazzari
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Mounir Kanzari
Article dans une revue
hal-04311472
v1
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Modelization of electrical and optical characteristics of short-wave infrared type I InGaAsBi/InGaAs/InP quantum wells p-i-n detector
N Sfina
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I Ammar
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J.-L. Lazzari
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Article dans une revue
hal-03144158
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Physical properties of electrodeposited CIGS films on crystalline silicon: Application for photovoltaic hetero-junction
H. Saïdi
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Article dans une revue
hal-03141578
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Study of n-WO3/p-porous silicon structures for gas-sensing applications
H. Mhamdi
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T. Fiorido
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J.-L. Lazzari
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Article dans une revue
hal-02867069
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Energy band gap tuning in Te-doped WS2/WSe2 heterostructures
Anna Krivosheeva
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Victor Borisenko
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J.-L. Lazzari
Article dans une revue
hal-03156173
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Physical properties of electrodeposited CIGS films on crystalline silicon: Application for photovoltaic hetero-junction
H. Saidi
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M.F. Boujmil
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B. Durand
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Article dans une revue
hal-02414308
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Electronic Properties of WS 2 /WSe 2 Heterostructure Containing Te Impurity: The Role of Substituting Position
A. Krivosheeva
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V. Shaposhnikov
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V. e. Borisenko
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Jean-Louis Lazzari
Article dans une revue
hal-02414584
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Electronic Properties of WS 2 /WSe 2 Heterostructure Containing Te Impurity: The Role of Substituting Position
A. Krivosheeva
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V. Shaposhnikov
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V. e. Borisenko
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J.-L. Lazzari
Article dans une revue
hal-03144479
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Optical Gain and Radiative Current Density in Strain Compensated GaAsP/GaAsBi/GaAsP QWs Laser Structure
N Sfina
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A. Jbeli
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Jean-Louis Lazzari
,
M. Saïd
Article dans une revue
hal-02414543
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Optical Gain and Radiative Current Density in Strain Compensated GaAsP/GaAsBi/GaAsP QWs Laser Structure
N. Sfina
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A. Jbeli
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J.-L. Lazzari
,
M. Said
Article dans une revue
hal-03141584
v1
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Enhancement of physical properties of stain-etched porous silicon by integration of WO3 nanoparticles
M. Alaya
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Rabia Benabderrahmane Zaghouani
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S. Khamlich
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J.-L. Lazzari
,
W. Dimassi
Article dans une revue
hal-03156158
v1
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Enhancement of physical properties of stain-etched porous silicon by integration of WO3 nanoparticles
M. Alaya
,
R. Benabderrahmane Zaghouani
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S. Khamlich
,
J. -L. Lazzari
,
W. Dimassi
Article dans une revue
hal-01688043
v1
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Study of WO3-decorated porous silicon and Al2O3-ALD encapsulation
R. Benabderrahmane Zaghouani
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M. Alaya
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H. Nouri
,
J.-L. Lazzari
,
W. Dimassi
Article dans une revue
hal-01958616
v1
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Elaboration and characterization of CuInSe 2 thin films using one-step electrodeposition method on silicon substrate for photovoltaic application
H. Saidi
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M Boujmil
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B Durand
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J-L Lazzari
,
M Bouaïcha
Article dans une revue
hal-01720283
v1
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Elaboration and characterization of CuInSe 2 thin films using one-step electrodeposition method on silicon substrate for photovoltaic application
H Saïdi
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M Boujmil
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B Durand
,
J.-L. Lazzari
,
M Bouaïcha
Article dans une revue
hal-03144205
v1
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Multiscale in modelling and validation for solar photovoltaics
Tareq Abu Hamed
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Nadja Adamovic
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Urs Aeberhard
,
Diego Alonso-Alvarez
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Zoe Amin-Akhlaghi
et al.
Article dans une revue
hal-01908379
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Contribution of a single quantum dots layer in intermediate band solar cells: A capacitance analysis
Hela Boustanji
,
Sihem Jaziri
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J.-L. Lazzari
Article dans une revue
hal-03144529
v1
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Contribution of a single quantum dots layer in intermediate band solar cells: A capacitance analysis
Hela Boustanji
,
Sihem Jaziri
,
Jean-Louis Lazzari
Article dans une revue
hal-01720820
v1
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Releasing confined holes from type-II quantum dots by inelastic scattering with hot photoelectrons
A. Kechiantz
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A. Afanasev
,
J. -L. Lazzari
Article dans une revue
hal-01455013
v1
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Composition dependence of the band offsets in wurtzite nitride-based heterojunctions
Amel Bhouri
,
Jean-Louis Lazzari
Article dans une revue
hal-01455010
v1
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Self-consistent vertical transport calculations in Al(x)Ga1-xN/GaN based resonant tunneling diode
A. Rached
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A. Bhouri
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S. Sakr
,
J. -L. Lazzari
,
H. Belmabrouk
Article dans une revue
hal-01455019
v1
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Composition dependence of the band offsets in wurtzite nitridebased heterojunctions
Amel Bhouri
,
J.-L. Lazzari
Article dans une revue
hal-03150428
v1
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Releasing confined holes from type-II quantum dots by inelastic scattering with hot photoelectrons
A. Kechiantz
,
A. Afanasev
,
J.-L. Lazzari
Article dans une revue
hal-03144548
v1
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Low-defect metamorphic Si (Ge) epilayers on Si (001) with a buried template of nanocavities for multiple-junction solar cells
Mahfoudh Raissi
,
Gabrielle Regula
,
Jean-Louis Lazzari
Article dans une revue
hal-01435212
v1
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Self-consistent vertical transport calculations in AlxGa1–xN/GaN based resonant tunneling diode
A. Rached
,
A. Bhouri
,
S. Sakr
,
J.-L. Lazzari
,
H. Belmabrouk
Article dans une revue
hal-03150265
v1
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Low-defect metamorphic Si (Ge) epilayers on Si (001) with a buried template of nanocavities for multiple-junction solar cells
Mahfoudh Raïssi
,
Gabrielle Regula
,
J.-L. Lazzari
Article dans une revue
hal-03144540
v1
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Resonant tunneling transport in AlxGa1-x/InyGa1-yN/ AlxGa1-x/ InzGa1-zN quantum structures
A Bhouri
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A Rached
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J.-L. Lazzari
Article dans une revue
hal-03150395
v1
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Impact of spatial separation of type-II GaSb quantum dots from the depletion region on the conversion efficiency limit of GaAs solar cells
Ara Kechiantz
,
Andrei Afanasev
,
J.-L. Lazzari
Progress in Photovoltaics: Research and Applications, 2015, 23 (8), pp.1003-1016. ⟨10.1002/pip.2521⟩
Article dans une revue
hal-03151392
v1
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Theoretical study of defect impact on two-dimensional MoS 2
Anna Krivosheeva
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Victor Shaposhnikov
,
Victor Borisenko
,
Jean-Louis Lazzari
,
Chow Waileong
et al.
Article dans une revue
hal-01721079
v1
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Resonant tunneling transport in AlzGa1-zN/InxGa1-x/AlzGa1-zN/InyGa1-yN quantum structures
A. Bhouri
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A. Rached
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J-L. Lazzari
Journal of Physics D: Applied Physics, 2015, 48 (38), pp.385102
Article dans une revue
hal-01214532
v1
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Direct band gap InxGa1-xAs/Ge type II strained quantum wells for short-wave infrared p-i-n photodetector
N. Harbi
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N. Sfina
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A. Jbeli
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J-L. Lazzari
,
M. Said
Optical Materials, 2015, 46, pp.472-480
Article dans une revue
hal-01176915
v1
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Performance evaluation of high-detectivity p-i-n infrared photodetector based on compressively-strained Ge<sub>0.964</sub>Sn<sub>0.036</sub>/Ge multiple quantum wells by quantum modelling
N. Yahyaoui
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N. Sfina
,
J. L. Lazzari
,
A. Bournel
,
M. Said
Article dans une revue
hal-01214522
v1
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Theoretical study of defect impact on two-dimensional MoS 2
Anna Krivosheeva
,
Victor Shaposhnikov
,
Victor Borisenko
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J.-L. Lazzari
,
Chow Waileong
et al.
Article dans une revue
hal-03151410
v1
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Direct band gap In x Ga 1Àx As/Ge type II strained quantum wells for short-wave infrared p-i-n photodetector
N. Harbi
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N. Sfina
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A. Jbeli
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J.-L. Lazzari
,
M. Said
Article dans une revue
hal-03144491
v1
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Band gap modifications of two-dimensional defected MoS2
A.V. Krivosheeva
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V.L. Shaposhnikov
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V.E. Borisenko
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Jean-Louis Lazzari
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N.V. Skorodumova
et al.
Article dans une revue
hal-01721341
v1
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Impact of Spatial Separation of Type-II GaSb Quantum Dots from the Depletion Region on the Conversion Efficiency Limit of GaAs Solar Cells
A. Kechiantz
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A. Afanas'Ev
,
J-L. Lazzari
Progress in Photovoltaics, 2015, 23 (8), pp.1003-1016
Article dans une revue
hal-01176908
v1
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Band gap modifications of two-dimensional defected MoS 2
A. V. Krivosheeva
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V. L. Shaposhnikov
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V. E. Borisenko
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J.-L. Lazzari
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N. V. Skorodumova
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Article dans une revue
hal-03144566
v1
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Stark shift of the absorption spectra in Ge/Ge1−xSnx/Ge type-I single QW cell for mid-wavelength infra-red modulators
N. Yahyaoui
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N. Sfina
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J.-L. Lazzari
,
A. Bournel
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M. Said
Article dans une revue
hal-03144282
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Resonant tunneling transport in Al z Ga 1− z N/In x Ga 1− x N/Al z Ga 1− z N/In y Ga 1− y N quantum structures
A Bhouri
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A Rached
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J.-L. Lazzari
Article dans une revue
hal-03151381
v1
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Resonant tunneling transport in Al z Ga 1− z N/In x Ga 1− x N/Al z Ga 1− z N/In y Ga 1− y N quantum structures
A Bhouri
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A Rached
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J.-L. Lazzari
Article dans une revue
hal-03151396
v1
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Performance evaluation of high-detectivity p-i-n infrared photodetector based on compressively-strained Ge 0.964 Sn 0.036 /Ge multiple quantum wells by quantum modelling
N Yahyaoui
,
N Sfina
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J.-L. Lazzari
,
A Bournel
,
M Said
Article dans une revue
hal-03151362
v1
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Electron transport through cubic InGaN/AlGaN resonant tunneling diodes
N. Yahyaoui
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N. Sfina
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S. Abdi-Ben Nasrallah
,
J-L. Lazzari
,
M. Said
Computer Physics Communications, 2014, 185 (12), pp.3119-3126
Article dans une revue
hal-01221448
v1
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Magnetic properties of AII-BIV-CV2 chalcopyrite semiconductors doped with 3d-elements
A.V. Krivosheeva
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V.L. Shaposhnikov
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V.E. Borisenko
,
J-L. Lazzari
physica status solidi (b), 2014, 251 (5), pp.1007-1019
Article dans une revue
hal-00992902
v1
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Modelling of the quantum transport in strained Si/SiGe/Si superlattices based p-i-n infrared photodetectors for 1.3-1.55 μm optical communication
N. Sfina
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N. Yahyaoui
,
M. Said
,
J.-L. Lazzari
Modelling and Numerical Simulation of Material Science, 2014, 4, pp.37-52
Article dans une revue
hal-00975045
v1
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Wave-function engineering and absorption spectra in Si 0.16 Ge 0.84 /Ge 0.94 Sn 0.06 /Si 0.16 Ge 0.84 strained on relaxed Si 0.10 Ge 0.90 type I quantum well
N. Yahyaoui
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N. Sfina
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J.-L. Lazzari
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A. Bournel
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M. Said
Article dans une revue
hal-03144424
v1
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Band engineering and absorption spectra in compressively strained Ge 0.92 Sn 0.08 /Ge (001) double quantum well for infrared photodetection
N. Yahyaoui
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N. Sfina
,
J.-L. Lazzari
,
A. Bournel
,
M. Said
Article dans une revue
istex
hal-03144555
v1
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Electron transport through cubic InGaN/AlGaN resonant tunneling diodes
S Abdi-Ben Nasrallah
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N. Yahyaoui
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N. Sfina
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S. Abdi-Ben Nasrallah
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J.-L. Lazzari
et al.
Article dans une revue
hal-03144318
v1
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Magnetic properties of A II -B IV -C 2 V chalcopyrite semiconductors doped with 3d-elements
Anna Krivosheeva
,
Victor Shaposhnikov
,
Victor Borisenko
,
J.-L. Lazzari
Article dans une revue
istex
hal-03151346
v1
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Modelling of the Quantum Transport in Strained Si/SiGe/Si Superlattices Based P-i-n Infrared Photodetectors for 1.3 - 1.55 μm Optical Communication
Noureddine Sfina
,
Naima Yahyaoui
,
Moncef Said
,
J.-L. Lazzari
Article dans une revue
hal-03144388
v1
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Computation of the electronic structure and direct-gap absorption spectra in Ge-rich Si1-xGex/Ge/Si1-xGex type-I quantum wells
N. Yahyaoui
,
N. Sfina
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J.-L. Lazzari
,
A. Bournel
,
M. Said
The European Physical Journal B: Condensed Matter and Complex Systems, 2013, 86 (2), pp.59
Article dans une revue
hal-00843724
v1
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Intersubband transitions in quantum well mid-infrared photodetectors
N. Zeiri
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N. Sfina
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S. Abdi-Ben Nasrallah
,
J.-L. Lazzari
,
M. Said
Infrared Physics and Technology, 2013, 60, pp.137-144
Article dans une revue
hal-00975049
v1
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Mn Concentration and Quantum Size Effects on Spin-Polarized Transport Through CdMnTe Based Magnetic Resonant Tunneling Diode
S. Mnasri
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S. Abdi-Ben Nasrallah
,
N. Sfina
,
J.L. Lazzari
,
M. Said
Journal of Nanoscience and Nanotechnology, 2012, 12 (11), pp.8791-8796
Article dans une revue
hal-00843723
v1
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Electronic Properties of GaSb Based Heterostructure for 3 um Emission
A. Jdidi
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S. Abdi-Ben Nasrallah
,
N. Sfina
,
M. Saïd
,
J.-L. Lazzari
Sensor letters, 2012, 9 (6), pp.2257-2260
Article dans une revue
hal-00698897
v1
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Ab initio modeling of the structural, electronic and optical properties of AIIBIVCV2 semiconductors
V.L. Shaposhnikov
,
A.V. Krivosheeva
,
V.E. Borisenko
,
J.L. Lazzari
,
F. Arnaud d'Avitaya
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2012, 85, pp.205201
Article dans une revue
hal-00698898
v1
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Si/S1-xGex/Si-based quantum wells infrared photodetector operating at 1.55 mu m
N. Sfina
,
J.-L. Lazzari
,
M. Said
Superlatices and Microstructures, 2012, 52 (4), pp.901-912
Article dans une revue
hal-00773483
v1
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Structural and electrical characterizations of nanometer scaled aluminum oxide in metal / insulator / silicon (100) heterostructures
N. Rochdi
,
Mahfoudh Raïssi
,
S. Vizzini
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C. Coudreau
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J.-L. Lazzari
et al.
Global Journal of Physical Chemistry, 2011, 2 (2), pp.230-235
Article dans une revue
hal-00603274
v1
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A theoretical study of band structure properties for III-V nitrides quantum wells
S. Ben Rejeb
,
A. Bhouri
,
M. Debbichi
,
J.-L. Lazzari
,
M. Said
Article dans une revue
istex
hal-00624857
v1
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Electrical field and temperature effects in 2D-2D resonant tunneling diodes based on cubic InGaN/AlGaN
A. Bhouri
,
N. Yahyaoui
,
M. Debbichi
,
H. Mejri
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J.-L. Lazzari
et al.
physica status solidi (c), 2011, 8 (5), pp.1544-1547
Article dans une revue
hal-00603259
v1
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AII-BIV-CV2 ternary semiconductors for photovoltaics
A.V. Krivosheeva
,
V.L. Shaposhnikov
,
V.E. Borisenko
,
F. Arnaud d'Avitaya
,
J.-L. Lazzari
Global Journal of Physical Chemistry, 2011, 2 (2), pp.201-205
Article dans une revue
hal-00603275
v1
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Surface morphology and structure of ultra-thin magnesium oxide grown on (100) silicon by atomic layer deposition oxidation
N. Rochdi
,
K. Liudvikouskaya
,
M. Descoins
,
Mahfoudh Raïssi
,
C. Coudreau
et al.
Thin Solid Films, 2011, 519 (19), pp.6302-6306
Article dans une revue
hal-00603279
v1
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Spin polarization and spin-dependent transmittance in II-VI diluted magnetic semiconductor heterostructure
S. Mnasri
,
N. Sfina
,
S. Abdi-Ben Nasrallah
,
J.-L. Lazzari
,
M. Said
Journal of Magnetism and Magnetic Materials, 2011, 323, pp.334-339
Article dans une revue
hal-00566373
v1
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A multi-color quantum well photodetector for mid- and long-wavelength infrared detection
A. Jdidi
,
N. Sfina
,
S. Abdi-Ben Nassrallah
,
M. Saïd
,
J.-L. Lazzari
Article dans une revue
istex
hal-00696826
v1
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Different Architectures of Relaxed Si1-xGex/Si Pseudo-Substrates Grown by Low-Pressure Chemical Vapor Deposition: Structural and Morphological Characteristics
Mahfoudh Raïssi
,
G. Regula
,
C. Hadj Belgacem
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N. Rochdi
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S. Bozzo-Escoubas
et al.
Journal of Crystal Growth, 2011, 328, pp.18-24
Article dans une revue
hal-00624850
v1
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Inter-Diffusion of cobalt and silicon through an ultrathin aluminum oxide layer
T. El Asri
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Mahfoudh Raïssi
,
S. Vizzini
,
A. El Maachi
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E.L. Ameziane
et al.
Applied Surface Science, 2010, 256, pp.2731-2734
Article dans une revue
hal-00475821
v1
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Engineering of Ga1-xInxAsySb1y/GaSb quantum well for III-V based devices emitting near 2.7 µm
A. Jdidi
,
N. Sfina
,
M. Saïd
,
J.L. Lazzari
Institute of physics conference series, 2010, 13, pp.012005
Article dans une revue
hal-00603269
v1
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Interfacial solid phase reactions in cobalt/aluminum oxide/silicon(001) system
Mahfoudh Raïssi
,
S. Vizzini
,
G. Langer
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N. Rochdi
,
H. Oughaddou
et al.
Thin Solid Films, 2010, 518 (21), pp.5992-5994
Article dans une revue
hal-00523867
v1
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Alternative II-IV-V2 and Zn-III-IV-As3 compounds for photovoltaic applications
A.V. Krivosheeva
,
V.L. Shaposhnikov
,
V.E. Borisenko
,
J. L. Lazzari
Fizika, 2010, XVI (3-4EN), pp.33-36
Article dans une revue
hal-00603270
v1
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Electronic and magnetic properties of Mn-doped BeSiAs2 and BeGeAs2 compounds
A.V. Krivosheeva
,
V.L. Shaposhnikov
,
F. Arnaud d'Avitaya
,
V.E. Borisenko
,
J.L. Lazzari
Journal of Physics: Condensed Matter, 2009, 21 (1-6), pp.045507
Article dans une revue
hal-00386900
v1
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A theoretical study of laser structures based on dilute-nitride InAsN for mid-infrared operation
M. Debbichi
,
S. Ridene
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H. Bouchriha
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A. Ben Fredj
,
M. Saïd
et al.
Article dans une revue
istex
hal-01618135
v1
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Nitrogen effect on optical grain and radiative current density for mid-infrared InAs(N)/GaSb/InAs(N) quantum-well laser
M. Debbichi
,
A. Ben Fredj
,
M. Said
,
J.L. Lazzari
,
Y. Cuminal
et al.
Physica E: Low-dimensional Systems and Nanostructures, 2008, 40 (3), pp.489-493
Article dans une revue
hal-00269960
v1
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Optical gain calculation of mid-infrared InAsN/GaSb quantum-well laser for tunable absorption spectroscopy applications
M. Debbichi
,
A. Fredj
,
A. Bhouri
,
M. Saïd
,
J.-L. Lazzari
et al.
Article dans une revue
istex
hal-01617344
v1
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Nitrogen effect on optical gain and radiative current density for mid-infrared InAs(N)/GaSb/InAs(N) quantum-well laser
M. Debbichi
,
A. Ben Fredj
,
M. Saïd
,
J.L Lazzari
,
Y. Cuminal
et al.
Article dans une revue
istex
hal-00327284
v1
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InAsN/GaSb/InAsN ‘W’ quantum well laser for mid-infrared emission: from electronic structure to threshold current density calculations
M Debbichi
,
A Ben Fredj
,
Y. Cuminal
,
J-L Lazzari
,
S Ridene
et al.
Article dans une revue
istex
hal-01617369
v1
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Simulation of p–i–n heterojunctions built on strain-compensated Si/Si0.40Ge0.60/Si multiple quantum wells for photodetection near 1.55 µm
N. Sfina
,
J.-L. Lazzari
,
Y. Cuminal
,
Philippe Christol
,
M. Said
Article dans une revue
istex
hal-00386891
v1
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Coulomb interaction of electron gas in MQWs Si/Si1−xGex/Si
N. Sfina
,
J.-L. Lazzari
,
Y. Cuminal
,
Philippe Christol
,
M. Said
Article dans une revue
istex
hal-01617316
v1
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Structural, electronic and optical properties of II-IV-N-2 compounds (II=Be,Zn;IV=Si,Ge)
V.L. Shaposhnikov
,
A.V. Krivosheeva
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physica status solidi (b), 2008, 245 (1), pp.142-148
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hal-00269959
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A novel quantum-well laser structure based on InAs1-xNx/GaSb system
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hal-00175311
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Growth of magnetic tunnel junctions on Si(001) substrates
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hal-00175305
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Controlled growth of aluminum oxide thin films on hydrogen terminated Si(001) surface
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Journal of Crystal Growth, 2007, 305, pp.26
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hal-00386873
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Resonant tunnelling versus thermally activated transport through strained Si1-xGex/Si/Si1-xGex quantum wells
J.A. Berashevich
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E. Viktor
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F. Arnaud d'Avitaya
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2007, 75 (11), pp.115336
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hal-00165310
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Controlled growth of aluminum oxide thin films on hydrogen terminated Si(001) surface
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Journal of Crystal Growth, 2007, 305, pp.26-29
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Resonant tunneling versus thermally activated transport through strained Si1-xGex/Si/Si1-xGex quantum well
J.A. Berashevich
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F. Arnaud d'Avitaya
Virtual Journal of Nanoscale Science & Technology, 2007, 15 (12), pp.149
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hal-00175316
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Induced electrostatic confinement of electron gas in W strain-compensated Si/SiGe/Si type-II quantum wells
N. Sfina
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J.L Lazzari
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Philippe Christol
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Y. Cuminal
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M. Saïd
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hal-00328229
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Field effect on electron-hole recombination in Si/Si1-Xgex/Si quantum wells having a W-like type II potential profile
N. Sfina
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J.L. Lazzari
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M. Said
Materials Science and Engineering: C, 2006, 26, n° 2-3, pp.214-217
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hal-00068519
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Modeling of the Stark effect in strained n-type Ge0.6Si0.4/Si/Ge0.6Si0.4 resonat tunneling diodes with graded electrostatic GexSi1-x (0.25
N. Sfina
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Nasrallah S. Abdi-Ben
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J.L. Lazzari
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Materials Science in Semiconductor Processing, 2006, 9 (4-5), pp.737-740
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hal-00133705
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Strain-balanced Si<sub>1-x</sub>Ge<sub>x</sub>/Si type II quantum wells for 1.55μm detection and emission
N. Sfina
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J.L. Lazzari
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J. Derrien
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F.A. d'Avitaya
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M. Said
Article dans une revue
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hal-00017817
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Field effect on optical recombination in Si/SiGe quantum hgeterostructures having U, W and M type II potential designs
N. Sfina
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M. Said
Materials Science and Engineering: B, 2005, 124, pp.470-474
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hal-00016469
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Caractérisation au-dessous du seuil de doubles hétérostructures lasers GaInAsSb/GaAlAsSb émettant vers 2,37 μm
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jpa-00249058
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Liquid phase epitaxy and characterization of InAs1- x - ySb x P y on (100) InAs
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hal-03156839
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Preparation et étude de diodes laser a GaInAsSb-GaAlAsSb fonctionnant en continu à 80K
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jpa-00248604
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GaInAsSb/GaSb pn photodiodes for detection to 2.4 μm
E. Tournié
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hal-03156834
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2.5 μm GaInAsSb lattice‐matched to GaSb by liquid phase epitaxy
E. Tournié
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C. Alibert
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hal-03156369
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