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Structural and electronic properties of hydrogenated polymorphous silicon films deposited at high rate
Yrebegnan Soro
,
Marie-Estelle Gueunier-Farret
,
Jean-Paul Kleider
Journal articles
hal-00710726v1
|
|
Characterization of silicon heterojunctions for Solar Cells
Jean-Paul Kleider
,
José Alvarez
,
Martin Labrune
,
Pere Roca I Cabarrocas
,
Olga Alexandrovna Maslova
et al.
Journal articles
hal-00641696v1
|
|
New silicon thin-film technology associated with original DC-DC converter: An economic alternative way to improve photovoltaic systems efficiencies
Foudil Dadouche
,
Olivier Bethoux
,
Jean-Paul Kleider
Journal articles
hal-00710738v1
|
|
Conductive-probe atomic force microscopy characterization of silicon nanowires
José Alvarez
,
Irène Ngo
,
Marie-Estelle Gueunier-Farret
,
Jean-Paul Kleider
,
Linwei Yu
et al.
Journal articles
hal-00710727v1
|
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Discerning passivation mechanisms at a-Si:H/c-Si interfaces by means of photoconductance measurements
Caspar Leendertz
,
N. Mingirulli
,
T.F. Schulze
,
Jean-Paul Kleider
,
Bernd Rech
et al.
Journal articles
hal-00710735v1
|
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Giant and reversible enhancement of the electrical resistance of GaAs1−xNx by hydrogen irradiation
José Alvarez
,
Jean-Paul Kleider
,
R. Trotta
,
A. Polimeni
,
M. Capizzi
et al.
Journal articles
hal-00710737v1
|
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Spatially resolved lifetime measurements of silicon heterojunctions from the modulated photoluminescence technique
Wilfried Favre
,
Jean-Paul Kleider
,
D Munoz
,
S. Martin-De-Nicolas
,
P.-J. Ribeyron
et al.
Journal articles
hal-00710728v1
|
|
Study of the interfacial properties of amorphous Silicon/n-type crystalline Silicon heterojunction through static coplanar conductance measurements
Wilfried Favre
,
M. Labrune
,
Foudil Dadouche
,
A.S. Gudovskikh
,
Pere Roca I Cabarrocas
et al.
physica status solidi (c), 2010, 7 (3), pp.1037-1040
Journal articles
hal-00555226v1
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Open-circuit voltage increase dynamics in high and low deposition rate polymorphous silicon solar cells
E.V. Johnson
,
Foudil Dadouche
,
Marie-Estelle Farret-Gueunier
,
Jean-Paul Kleider
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Pere Roca I Cabarrocas
et al.
physica status solidi (a), 2010, 207 (3), pp.691-694
Journal articles
hal-00555228v1
|
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Observation by conductive-probe atomic force microscopy of strongly inverted surface layers at the hydrogenated amorphous silicon/crystalline silicon heterojunctions
Olga Alexandrovna Maslova
,
José Alvarez
,
E.V. Gushina
,
Wilfried Favre
,
Marie-Estelle Gueunier-Farret
et al.
Applied Physics Letters, 2010, 97 (25), pp.252110
Journal articles
hal-00557102v1
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2D simulations of interdigitated back contact heterojunctions solar cells based on n-type crystalline silicon
Djicknoum Diouf
,
Jean-Paul Kleider
,
T. Desrues
,
P.-J. Ribeyron
physica status solidi (c), 2010, 7 (3), pp.1033-1036
Journal articles
hal-00555230v1
|
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Band structure at heterojunction interfaces of GaInP solar cells
A.S. Gudovskikh
,
Jean-Paul Kleider
,
N.A. Kalyuzhnyy
,
V.M. Lantratov
,
S.A. Mintairov
et al.
Solar Energy Materials and Solar Cells, 2010, 94 (11), pp.1953-1958
Journal articles
hal-00555232v1
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B-Doped a-Si:H contact improvement on silicon heterojunctions solar cells and interdigitated back contact structure
T. Desrues
,
P.-J. Ribeyron
,
A. Vandenheynde
,
S. Ozanne
,
Florent Souche
et al.
physica status solidi (c), 2010, 7 (3), pp.1011-1015
Journal articles
hal-00555227v1
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Photoconductivity of two-phase hydrogenated silicon films
A.G Kazanskii
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E.I Terukov
,
P.A Forsh
,
Jean-Paul Kleider
Semiconductors, 2010, 44, pp.494-497
Journal articles
hal-00555231v1
|
|
III-phosphides heterojunction solar cell interface properties from admittance spectroscopy
A.S. Gudovskikh
,
Jean-Paul Kleider
,
Rémy Chouffot
,
N.A. Kalyuzhnyy
,
S.A. Mintairov
et al.
Journal of Physics D: Applied Physics, 2009, 42, pp. 165307-165315
Journal articles
hal-00445963v1
|
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Modulated photoluminescence as an effective lifetime measurement method : application to a-Si:H/c-Si heterojunction solar cells
Rémy Chouffot
,
Aurore Brézard
,
Jean-Paul Kleider
,
R. Brüggemann
,
M. Labrune
et al.
Materials Science and Engineering: B, 2009, 159, pp. 186-189
Journal articles
hal-00445959v1
|
|
Ultraviolet Detectors Based on Ultraviolet–Ozone Modified Hydrogenated Diamond Surfaces
José Alvarez
,
M. Liao
,
Jean-Paul Kleider
,
Y. Koide
,
M. Imura
et al.
Japanese Journal of Applied Physics, part 2 : Letters, 2009, 2, pp. 065501-065503
Journal articles
hal-00445962v1
|
|
Electronic and structural properties of the amorphous/crystalline silicon interface
Jean-Paul Kleider
,
Rémy Chouffot
,
A.S. Gudovskikh
,
Pere Roca I Cabarrocas
,
M. Labrune
et al.
Thin Solid Films, 2009, 517, pp. 6386-6391
Journal articles
hal-00445964v1
|
|
Characterization of defect levels in semi−insulating 6H−SiC by means of photoinduced transient spectroscopyand modulated photocurrent technique
Christophe Longeaud
,
Jean-Paul Kleider
,
P. Kaminski
,
R. Kozlowski
,
M. Miczuga
et al.
Journal of Physics: Condensed Matter, 2009, 21, pp. 045801-045815
Journal articles
hal-00445958v1
|
|
Determination of hydrogenated amorphous silicon density of states parameters from photoconductivity measurements
Christophe Longeaud
,
Julien Schmidt
,
R.R. Koropecki
,
Jean-Paul Kleider
Journal of Optoelectronics and Advanced Materials, 2009, 11 (9), pp.1064-1071
Journal articles
hal-00763198v1
|
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An intelligent measurement system for diagnosing of semi-insulating materials by photoinduced transient spectroscopy
M. Suproniuk
,
P. Kaminski
,
M. Miczuga
,
M. Pawlowski
,
R. Kozlowski
et al.
Przeglad Elektrotechniczny , 2009, 11/2009, pp.93-98
Journal articles
hal-00763193v1
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|
Study of interdigitated back contact silicon heterojonction solar cells by two dimensional numerical simulations
Djicknoum Diouf
,
Jean-Paul Kleider
,
T. Desrues
,
P.-J. Ribeyron
Materials Science and Engineering: B, 2009, 159, pp. 291-294
Journal articles
hal-00445960v1
|
|
Persistent positive and transient absolute negative photoconductivity observed in diamond photodetectors
M. Liao
,
Y. Koide
,
José Alvarez
,
M. Imura
,
Jean-Paul Kleider
et al.
Journal articles
hal-00763137v1
|
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Device grade hydrogenated polymorphous silicon deposited at high rates
Yrebegnan Moussa Soro
,
A. Abramov
,
Marie-Estelle Gueunier-Farret
,
E.V. Johnson
,
Christophe Longeaud
et al.
Journal of Non-Crystalline Solids, 2008, 354, pp.2092
Journal articles
hal-00350767v1
|
|
Polymorphous silicon thin films deposited at high rate: transport properties and density of states
Yrebegnan Moussa Soro
,
A. Abramov
,
Marie-Estelle Gueunier-Farret
,
E.V. Johnson
,
Christophe Longeaud
et al.
Thin Solid Films, 2008, 516, pp.6888
Journal articles
hal-00350886v1
|
|
Comparison of photoluminescence and capacitance spectroscopies as efficient tools for interface characterisation of heterojunction solar cells
Rémy Chouffot
,
Samah Ibrahim
,
R. Brüggemann
,
A.S. Gudovskikh
,
Jean-Paul Kleider
et al.
Journal of Non-Crystalline Solids, 2008, 354, pp.2416
Journal articles
hal-00350778v1
|
|
Electric field-controlled sign of the capacitance in metal-carbon nitride-metal devices
C. Godet
,
Jean-Paul Kleider
,
A.S. Gudovskikh
Journal of Non-Crystalline Solids, 2008, 354, pp.2637
Journal articles
hal-00350732v1
|
|
New method for interface characterization in heterojunction solar cells based on diffusion capacitance measurements
A.S. Gudovskikh
,
Rémy Chouffot
,
Jean-Paul Kleider
,
N.A. Kaluzhniy
,
V. Lantratov
et al.
Thin Solid Films, 2008, 516, pp.6786
Journal articles
hal-00350881v1
|
|
Distributed Electron Cyclotron Resonance plasma: a technology for large area deposition of device quality a-Si:H at very high rate
P. Leempoel
,
P. Descamps
,
T. Kervyn de Meerendré
,
J. Charliac
,
Pere Roca I Cabarrocas
et al.
Thin Solid Films, 2008, 516, pp.6853
Journal articles
hal-00350890v1
|
|
Modulated photoconductivity in the high and low frequency regimes
J.A. Schmidt
,
Christophe Longeaud
,
R.R. Koropecki
,
R. Arce
,
Jean-Paul Kleider
et al.
Journal of Non-Crystalline Solids, 2008, 354, pp.2914
Journal articles
hal-00350791v1
|
|
High interfacial conductivity at amorphous silicon/crystalline silicon heterojunctions
Jean-Paul Kleider
,
Yrebegnan Moussa Soro
,
Rémy Chouffot
,
A.S. Gudovskikh
,
Pere Roca I Cabarrocas
et al.
Journal of Non-Crystalline Solids, 2008, 354, pp.2441
Journal articles
hal-00350786v1
|
|
Determination of the conduction band offset between hydrogenated amorphous silicon and crystalline silicon from surface inversion layer conductance measurements
Jean-Paul Kleider
,
A.S. Gudovskikh
,
Pere Roca I Cabarrocas
Applied Physics Letters, 2008, 92, pp.162101
Journal articles
hal-00350871v1
|
|
Etude Didactique des Systèmes Photovoltaïques : Optimisation Thermique et Electrique
Cédric Jaouen
,
Erik Lacombe
,
Olivier Bethoux
,
Jean-Paul Kleider
La Revue 3 E. I, 2008, 52, pp.59
Journal articles
hal-02054712v1
|
|
Scaling analysis of field-enhanced bandtail hopping transport in amorphous carbon nitride
Christian Godet
,
Jean-Paul Kleider
,
A. Gudovskikh
Journal articles
hal-00322073v1
|
|
Effect of thermal coupling on the electronic properties of hydrogenated amorphous silicon thin films deposited by ECR
T.H. Dao
,
Marie-Estelle Gueunier-Farret
,
D. Daineka
,
P. Bulkin
,
Pere Roca I Cabarrocas
et al.
Thin Solid Films, 2007, 515, pp.7650-7653
Journal articles
hal-00322079v1
|
|
Influence of the molecular structure of copper phtalocyanines on their ordering in thin films and, photoluminescence and absorption spectra
V.L. Berkovits
,
A.V. Ziminov
,
A.G. Kazanskii
,
A.G. Kolos'Ko
,
E.I. Terukov
et al.
Physics of the Solid State, 2007, 49, pp.272-277
Journal articles
hal-00322069v1
|
|
Local photoconductivity on diamond metal-semiconductor-metal photodetectors measured by conducting probe atomic force microscopy
José Alvarez
,
Frédéric Houzé
,
Jean-Paul Kleider
,
M. Liao
,
Y. Koide
et al.
Diamond and Related Materials, 2007, 16, pp.1074-1077
Journal articles
hal-00320360v1
|
|
Frequency scaling of ac hopping transport in amorphous carbon nitride
C. Godet
,
Jean-Paul Kleider
,
A.S. Gudovskikh
Diamond and Related Materials, 2007, 16, pp.1799-1805
Journal articles
hal-00322081v1
|
|
Capacitance spectroscopy of amorphous/crystalline silicon heterojunction solar cells at forward bias and under illumination
Alexander Gudovskikh
,
Jean-Paul Kleider
Applied Physics Letters, 2007, 90, pp.034104
Journal articles
hal-00322070v1
|
|
Determination of band offsets in a-Si:H/c-Si heterojunctions from capacitance-voltage measurements: capabilities and limits
A.S. Gudovskikh
,
Samah Ibrahim
,
Jean-Paul Kleider
,
J. Damon-Lacoste
,
Pere Roca I Cabarrocas
et al.
Thin Solid Films, 2007, 515, pp.7481-7485
Journal articles
hal-00322077v1
|
|
Electrical characterization of Schottky diodes based on boron doped homoepitaxial diamond films by conducting probe atomic force microscopy
José Alvarez
,
Frédéric Houzé
,
Jean-Paul Kleider
,
M. Liao
,
Y. Koide
et al.
Superlattices and Microstructures, 2006, 40, pp.343-349
Journal articles
hal-00320288v1
|
|
About the efficiency limits of heterojunction solar cells
J. Damon-Lacoste
,
Pere Roca I Cabarrocas
,
P. Chatterjee
,
Y. Veschetti
,
Alexander Gudovskikh
et al.
Journal of Non-Crystalline Solids, 2006, 352, pp.1928-1932
Journal articles
hal-00321740v1
|
|
Determination of semiconductors band gap states parameters from photoconductivity measurements: I- Theoretical developments
Christophe Longeaud
,
J.A. Schmidt
,
Jean-Paul Kleider
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2006, 73, pp.235316
Journal articles
hal-00321720v1
|
|
Interface properties of a-Si:H/c-Si heterojunction solar cells from admittance spectroscopy
Alexander Gudovskikh
,
Jean-Paul Kleider
,
J. Damon-Lacoste
,
Pere Roca I Cabarrocas
,
Y. Veschetti
et al.
Thin Solid Films, 2006, 511-512, pp.385-389
Journal articles
hal-00321738v1
|
|
DC and AC hopping transport in metal/amorphous carbon nitride/metal devices
Jean-Paul Kleider
,
Alexander Gudovskikh
,
C. Godet
Journal of Non-Crystalline Solids, 2006, 352, pp.1323-1326
Journal articles
hal-00321741v1
|
|
Local electrical characterization of Schottky diodes on H-terminated diamond surfaces by conducting probe atomic force microscopy
Frédéric Houzé
,
José Alvarez
,
Jean-Paul Kleider
,
P. Bergonzo
,
E. Snidero
et al.
Diamond and Related Materials, 2006, 15, pp.618-621
Journal articles
hal-00320285v1
|
|
Device quality a-Si:H deposited from electron cyclotron resonance at very high deposition rates
Marie-Estelle Gueunier-Farret
,
Cyril Bazin
,
Jean-Paul Kleider
,
Christophe Longeaud
,
P. Bulkin
et al.
Journal of Non-Crystalline Solids, 2006, 352, pp.1913-1916
Journal articles
hal-00321731v1
|
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Transport properties and defects in silicon nanoparticles and effect of embedding in amorphous silicon layers
M.E. Gueunier-Farret
,
J.P. Kleider
,
F. Voigt
,
R. Brüggemann
,
G.H. Bauer
et al.
Journal articles
hal-02116929v1
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|
New approach to capacitance spectroscopy for interface characterization of a-Si:H/c-Si heterojunctions
Alexander Gudovskikh
,
Jean-Paul Kleider
,
R. Stangl
Journal of Non-Crystalline Solids, 2006, 352, pp.1213-1216
Journal articles
hal-00321743v1
|
|
Interface properties of a-Si:H/c-Si heterojunction solar cells from admittance spectroscopy
A.S. Gudovskikh
,
Kleider J.P.
,
J. Damon-Lacoste
,
Roca I Cabarrocas P.
,
Y. Veschetti
et al.
Thin Solid Films, 2006, 511-512, pp.219-223
Journal articles
hal-00081376v1
|
|
Optimisation of amorphous and polymorphous silicon thin layers for formation of front-side heterojonction solar cells on p-type crystalline silicon substrate
Y. Veschetti
,
J.C. Muller
,
A.S. Gudovskikh
,
J.P. Kleider
,
E. Rolland
et al.
Thin Solid Films, 2006, 511-512, pp. 543-547
Journal articles
hal-00207846v1
|
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Optimisation of amorphous and polymorphous thin silicon layers for formation of front-side heterojunction solar cells on p-type crystalline silicon
Y. Veschetti
,
J.C. Muller
,
J. Damon-Lacoste
,
Pere Roca I Cabarrocas
,
Alexander Gudovskikh
et al.
Thin Solid Films, 2006, 511-512, pp.543-547
Journal articles
hal-00321734v1
|
|
About the efficiency limits of heterojunction solar cells
J. Damon-Lacoste
,
Pere Roca I Cabarrocas
,
P. Chatterjee
,
Y. Veschetti
,
A.S. Gudovskikh
et al.
Journal of Non-Crystalline Solids, 2006, 352, pp.1928-1932
Journal articles
hal-00349875v1
|
|
Parameters of the density of states in the gap of defective semiconductors determined from photoconductivity measurements
J.A. Schmidt
,
Christophe Longeaud
,
R.R. Koropecki
,
Jean-Paul Kleider
Journal of Non-Crystalline Solids, 2006, 352, pp.1024-1027
Journal articles
hal-00321725v1
|
|
Disorder and localization in bandtail hopping transport: Experiments and concepts
C. Godet
,
Jean-Paul Kleider
Journal of Materials Science: Materials in Electronics, 2006, 17, pp.413-426
Journal articles
hal-00321744v1
|
|
Light-intensity dependence of the steady state photoconductivity used to estimate the density of states in the gap of intrinsic semiconductors
J.A. Schmidt
,
Christophe Longeaud
,
Jean-Paul Kleider
Thin Solid Films, 2005, 493, pp.319-324
Journal articles
hal-00321248v1
|
|
Characterization of a-Si:H/c-Si interface by admittance spectroscopy
Alexander Gudovskikh
,
Jean-Paul Kleider
,
E.I. Terukov
Semiconductors, 2005, 39, pp.903-909
Journal articles
hal-00321250v1
|
|
Deep defects and their electron capture cross sections in polymorphous silicon-germanium thin films
M. Meaudre
,
Marie-Estelle Gueunier-Farret
,
R. Meaudre
,
Jean-Paul Kleider
,
S. Vignoli
et al.
Journal of Applied Physics, 2005, 98, pp.33531
Journal articles
hal-00321252v1
|
|
Electroluminescence in amorphous-crystalline silicon heterostructures
M.S. Bresler
,
O.B. Gusev
,
E.I. Terukov
,
W. Fuhs
,
A. Froitzheim
et al.
Journal of Non-Crystalline Solids, 2004, 338-340, pp.440-443
Journal articles
hal-00320876v1
|
|
Investigation of bandgap states using the modulated photocurrent technique in both low and high frequency regimes
Jean-Paul Kleider
,
Christophe Longeaud
,
Marie-Estelle Gueunier
Journal of Non-Crystalline Solids, 2004, 338-340, pp.390-399
Journal articles
hal-00320874v1
|
|
Uv-visible sensors based on polymorphous silicon
C. Guedj
,
N. Moussy
,
W. Rabaud
,
Pere Roca I Cabarrocas
,
S. Tchakarov
et al.
Journal of Non-Crystalline Solids, 2004, 338-340, pp.749-753
Journal articles
hal-00320867v1
|
|
Effects of proton irradiation on the electronic properties of microcrystalline silicon
R. Brüggemann
,
S. Brehme
,
Jean-Paul Kleider
,
Marie-Estelle Gueunier
,
W. Bronner
et al.
Journal of Non-Crystalline Solids, 2004, 338-340, pp.477-480
Journal articles
hal-00321028v1
|
|
Modulated photocurrent in the recombination regime
Marie-Estelle Gueunier
,
Christophe Longeaud
,
Jean-Paul Kleider
European Physical Journal: Applied Physics, 2004, 26, pp.75-85
Journal articles
hal-00320883v1
|
|
The modulated photocurrent technique: a powerful tool to investigate band gap states in silicon based thin films
Jean-Paul Kleider
,
Christophe Longeaud
,
Marie-Estelle Gueunier
Phys. stat. sol., 2004, 1, pp.1208-1226
Journal articles
hal-00321029v1
|
|
On the metastability of the surface conductivity in hydrogen-terminated polycrystalline CVD diamond
José Alvarez
,
Jean-Paul Kleider
,
E. Snidero
,
P. Bergonzo
,
D. Tromson
et al.
Diamond and Related Materials, 2004, 13, pp.751-754
Journal articles
hal-00321021v1
|
|
Very high UV-visible selectivity in polycrystalline CVD diamond films
José Alvarez
,
A. Godard
,
Jean-Paul Kleider
,
P. Bergonzo
,
D. Tromson
et al.
Diamond and Related Materials, 2004, 13, pp.881-885
Journal articles
hal-00321024v1
|
|
Investigations of a-Si:H/c-Si heterojunction solar cells interface properties
Alexander Gudovskikh
,
Jean-Paul Kleider
,
A. Froitzheim
,
W. Fuhs
,
E.I. Terukov
et al.
Thin Solid Films, 2004, 451-452, pp.345-348
Journal articles
hal-00320873v1
|
|
High-field transport in amorphous carbon and carbon nitride films
S. Kumar
,
C. Godet
,
Alexander Gudovskikh
,
Jean-Paul Kleider
,
G. Adamopoulos
et al.
Journal of Non-Crystalline Solids, 2004, 338-340, pp.349-352
Journal articles
hal-00320878v1
|
|
Investigation of nc-Si inclusions behaviour in multilayer a-Si:H films obtained by layer by layer technique
Alexander Gudovskikh
,
Jean-Paul Kleider
,
V.P. Afanasjev
,
A.Z. Kazak-Kazakevich
,
A.P. Sazanov
et al.
Journal of Non-Crystalline Solids, 2004, 338-340, pp.135-138
Journal articles
hal-00320870v1
|
|
Polycrystalline AlN films deposited at low temperature for selective UV detectors
José Alvarez
,
Alexander Gudovskikh
,
Jean-Paul Kleider
,
V. Afanasjev
,
V.V. Luchinin
et al.
Sensors and Actuators A: Physical , 2004, 113, pp.355-359
Journal articles
hal-00321026v1
|
|
Hydrogen, microstructure and defect density in hydrogenated amorphous silicon
Pere Roca I Cabarrocas
,
Z. Djebbour
,
J. Kleider
,
C. Longeaud
,
D. Mencaraglia
et al.
Journal articles
jpa-00246677v1
|