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Jérémy Postel-Pellerin

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Correlation between 1064 nm laser attack and thermal behavior in STT-MRAM

Nicole Yazigy , J. Postel-Pellerin , G. Di Pendina , R.C. Sousa , V. Della Marca
Microelectronics Reliability, 2023, 150, pp.115167. ⟨10.1016/j.microrel.2023.115167⟩
Journal articles hal-04524638v1
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Experimental analysis on stochastic behavior of preswitching time in STT-MRAM

N. Yazigy , J. Postel-Pellerin , V. Della Marca , K. Terziyan , S. Nadifi
Microelectronics Reliability, 2022, 138, pp.114677. ⟨10.1016/j.microrel.2022.114677⟩
Journal articles hal-03941025v1
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Experimental Analysis of Oxide-Based RAM Analog Synaptic Behavior

Hassan Aziza , Jeremy Postel-Pellerin , Mathieu Moreau
Electronics, 2022, 12 (1), pp.49. ⟨10.3390/electronics12010049⟩
Journal articles hal-03941057v1
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1T-NOR Flash memory after endurance degradation: An advanced TCAD simulation

F. Matteo , R. Simola , J. Postel-Pellerin , K. Coulié
Microelectronics Reliability, 2022, 138, pp.114621. ⟨10.1016/j.microrel.2022.114621⟩
Journal articles hal-03941091v1
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STATE: A Test Structure for Rapid and Reliable Prediction of Resistive RAM Endurance

H. Aziza , J. Postel-Pellerin , M. Moreau
IEEE Transactions on Device and Materials Reliability, 2022, 22 (4), pp.500-505. ⟨10.1109/TDMR.2022.3213191⟩
Journal articles hal-03941082v1
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Real-time switching dynamics in STT-MRAM

N Yazigy , J Postel-Pellerin , V Della Marca , K Terziyan , R C Sousa
IEEE Journal of the Electron Devices Society, 2022, ⟨10.1109/jeds.2022.3185324⟩
Journal articles hal-03708265v1
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EEPROM endurance degradation at different temperatures: State of the art TCAD simulation

Franck Matteo , Karine Coulié , Roberto Simola , Jérémy Postel-Pellerin , Franck Melul
Microelectronics Reliability, 2022, 136, pp.114717. ⟨10.1016/j.microrel.2022.114717⟩
Journal articles hal-03941108v1
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True Random Number Generator Integration in a Resistive RAM Memory Array Using Input Current Limitation

Hassen Aziza , Jeremy Postel-Pellerin , Hussein Bazzi , Pierre Canet , Mathieu Moreau
IEEE Transactions on Nanotechnology, 2020, 19, pp.214-222. ⟨10.1109/TNANO.2020.2976735⟩
Journal articles hal-03504843v1
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A global modeling approach of the leakage phenomena in dielectrics

Jérémy Postel-Pellerin , Gilles Micolau , Philippe Chiquet , Maminirina Joelson , Jean-Baptiste Decitre
E3S Web of Conferences, 2019, 88, pp.05002. ⟨10.1051/e3sconf/20198805002⟩
Journal articles hal-02618292v1
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Phenomenological modelling of non-volatile memory threshold voltage shift induced by nonlinear ionization with a femtosecond laser

Philippe Chiquet , Maxime Chambonneau , V. Della Marca , Jérémy Postel-Pellerin , Pierre Canet
Scientific Reports, 2019, 9 (7392), ⟨10.1038/s41598-019-43344-x⟩
Journal articles hal-02137915v1
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Quantitative correlation between Flash and equivalent transistor for endurance electrical parameters extraction

V. Della Marca , J. Postel-Pellerin , T. Kempf , A. Regnier , P. Chiquet
Microelectronics Reliability, 2018, 88-90, pp.159 - 163. ⟨10.1016/j.microrel.2018.06.116⟩
Journal articles hal-01900789v1
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Impact of Line Resistance Combined with Device Variability on Resistive RAM Memories

Hassen Aziza , Pierre Canet , Jérémy Postel-Pellerin
Advances in Science, Technology and Engineering Systems Journal, 2018, 3 (1), pp.11-17. ⟨10.25046/aj030102⟩
Journal articles hal-02335339v1
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Suppressing the memory state of floating gate transistors with repeated femtosecond laser backside irradiations

Maxime Chambonneau , Sarra Souiki Souiki-Figuigui , Philippe Chiquet , Vincenzo Della Marca , Jérémy Postel-Pellerin
Applied Physics Letters, 2017, 110, pp.161112 - 161112
Journal articles hal-01655116v1

Enhancement of flash memory endurance using short pulsed program/erase signals

P. Chiquet , J. Postel-Pellerin , C. Tuninetti , S. Souiki-Figuigui , P. Masson
ACTA IMEKO, 2016, 5 (4), pp.29-36. ⟨10.21014/acta_imeko.v5i4.422⟩
Journal articles hal-01451431v1

Impact of resistive paths on NVM array reliability: Application to Flash & ReRAM memories

P. Canet , J. Postel-Pellerin , Hassen Aziza
Microelectronics Reliability, 2016, 64 (SI), pp.36-41. ⟨10.1016/j.microrel.2016.07.096⟩
Journal articles hal-01434941v1

Impact of endurance degradation on the programming efficiency and the energy consumption of NOR flash memories

V. Della Marca , J. Postel-Pellerin , G. Just , P. Canet , J.-L. Ogier
Microelectronics Reliability, 2014, 54 (9-10), pp.2262 - 2265. ⟨10.1016/j.microrel.2014.07.063⟩
Journal articles hal-01760459v1

Experimental setup for non-destructive measurement of tunneling currents in semiconductor devices

Philippe Chiquet , Pascal Masson , Jérémy Postel-Pellerin , Romain Laffont , Gilles Micolau
Measurement - Journal of the International Measurement Confederation (IMEKO), 2014, 54, pp.234-240. ⟨10.1016/j.measurement.2014.02.015⟩
Journal articles hal-01315418v1
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Push the flash floating gate memories toward the future low energy application

V. Della Marca , G. Just , A. Regnier , L. Ogier , R. Simola
Solid-State Electronics, 2013, 79, pp.210 - 217. ⟨10.1016/j.sse.2012.09.001⟩
Journal articles hal-01760461v1
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Improved Performance of Silicon Nanocrystal Memories for Application Working Over a Wide Range of Temperature

V. Della Marca , J. Amouroux , G. Molas , J. Postel-Pellerin , F. Lalande
ECS Transactions, 2013, 53 (4), pp.129 - 139. ⟨10.1149/05304.0129ecst⟩
Journal articles hal-01760473v1

Effects of Lightly Doped Drain and Channel Doping Variations on Flash Memory Performances and Reliability

Guillaume Just , V. Della Marca , Arnaud Regnier , Jean-Luc Ogier , Jérémy Postel-Pellerin
Journal of Low Power Electronics, 2012, 8 (5), pp.717 - 724. ⟨10.1166/jolpe.2012.1230⟩
Journal articles hal-01760474v1
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Analysis of Conductance Variability in RRAM for Accurate Neuromorphic Computing

Hassen Aziza , J. Postel-Pellerin , Moritz Fieback , Said Hamdioui , Hanzhi Xun
25th IEEE Latin-American Test Symposium, Apr 2024, Maceio, Brazil
Conference papers hal-04540709v1

Experimental analysis on stochastic behavior of preswitching time in STT-MRAM

N. Yazigy , J. Postel-Pellerin , V. Della Marca , K. Terziyan , S. Nadifi
European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Sep 2022, Berlin, Germany. ⟨10.1016/j.microrel.2022.114677⟩
Conference papers hal-03941219v1

1T-NOR Flash memory after endurance degradation: An advanced TCAD simulation

F. Matteo , R. Simola , J. Postel-Pellerin , K. Coulié
European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Sep 2022, Berlin, Germany. pp.114621, ⟨10.1016/j.microrel.2022.114621⟩
Conference papers hal-03941212v1
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Advanced TCAD Simulation of Tunnel Oxide Degradation for EEPROM Applications

F. Matteo , R. Simola , J. Postel-Pellerin , K. Coulie
IEEE 4th International Conference on Dielectrics (ICD 2022), Jul 2022, Palerme, Italy. pp.764-768, ⟨10.1109/ICD53806.2022.9863611⟩
Conference papers hal-03941192v1
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STATE: A Test Structure for Rapid Prediction of Resistive RAM Electrical Parameter Variability

Hassen Aziza , Jeremy Postel-Pellerin , Hussein Bazzi , Mathieu Moreau , Adnan Harb
IEEE International Symposium on Circuits and Systems (ISCAS) 2022, May 2022, Austin, United States. pp.3532-3536, ⟨10.1109/ISCAS48785.2022.9937716⟩
Conference papers hal-03941188v1
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Resistive RAM SET and RESET Switching Voltage Evaluation as an Entropy Source for Random Number Generation

Hussein Bazzi , Jeremy Postel-Pellerin , Hassen Aziza , Mathieu Moreau , Adnan Harb
2020 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT), Oct 2020, Frascati, Italy. pp.1-4, ⟨10.1109/DFT50435.2020.9250726⟩
Conference papers hal-03504288v1
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True random number generation exploiting SET voltage variability in resistive RAM memory arrays

Jérémy Postel-Pellerin , Hussein Bazzi , Hassen Aziza , Pierre Canet , Mathieu Moreau
2019 19th Non-Volatile Memory Technology Symposium (NVMTS), Oct 2019, Durham, France. pp.1-5, ⟨10.1109/NVMTS47818.2019.9043369⟩
Conference papers hal-03504849v1
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An Augmented OxRAM Synapse for Spiking Neural Network (SNN) Circuits

Hassen Aziza , H. Bazzi , J. Postel-Pellerin , P. Canet , M. Moreau
2019 14th International Conference on Design & Technology of Integrated Systems In Nanoscale Era (DTIS), Apr 2019, Mykonos, France. ⟨10.1109/DTIS.2019.8735057⟩
Conference papers hal-02306907v1

MRAM: from STT to SOT, for security and memory

M. Kharbouche-Harrari , Rana Alhalabi , J. Postel-Pellerin , Romain Wacquez , Driss Aboulkassimi
XXXIII CONFERENCE ON DESIGN OF CIRCUITS AND INTEGRATED SYSTEMS (DCIS), Nov 2018, Lyon, France
Conference papers hal-01982788v1

Impact of a laser pulse on a STT-MRAM bitcell: security and reliability issues

M. Kharbouche-Harrari , J. Postel-Pellerin , G. Di Pendina , R. Wacquez , D. Aboulkassimi
2018 IEEE 24th International Symposium on On-Line Testing And Robust System Design (IOLTS), Jul 2018, Platja d'Aro, Spain. pp.243-244, ⟨10.1109/IOLTS.2018.8474088⟩
Conference papers hal-01976697v1

ReRAM ON/OFF resistance ratio degradation due to line resistance combined with device variability in 28nm FDSOI technology

Hassen Aziza , P. Canet , J. Postel-Pellerin , Mathieu Moreau , Jean-Michel Portal
2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Apr 2017, Athens, Greece. ⟨10.1109/ULIS.2017.7962594⟩
Conference papers hal-01745666v1

Impact of Resistive Paths on NVM Array Reliability: Application to Flash & ReRAM Memories

P. Canet , J. Postel-Pellerin , Hassen Aziza
27th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2016), Sep 2016, Halle, Germany
Conference papers hal-01463140v1
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Toward an innovative stochastic modeling of electric charges losses trough dielectrics

G. Micolau , J. Postel-Pellerin , P. Chiquet , M. Joelson , C. Abbas
Inter-Disciplinary Underground Science and Technology (i-DUST) Conference, Jun 2016, Avignon, France. pp.9, ⟨10.1051/e3sconf/20161204004⟩
Conference papers hal-01451874v1

Effect Of Short Pulsed Program/Erase Cycling On Flash Memory Devices

P. Chiquet , J. Postel-Pellerin , C. Tuninetti , S. Souiki-Figuigui , P. Masson
Workshop on New Perspectives in Measurements, Tools and Techniques for system’s reliability, maintainability and safety, Jun 2016, Milan, Italy
Conference papers hal-01437034v1

Simulation of the programming efficiency and the energy consumption of Flash memories during endurance degradation

J. Postel-Pellerin , P. Chiquet , V. Della Marca
International Semiconductor Conference (CAS), 2016, Oct 2016, Sinaia, Romania. ⟨10.1109/SMICND.2016.7783052⟩
Conference papers hal-01436469v1
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NVM cell degradation induced by femtosecond laser backside irradiation for reliability tests

V. Della Marca , M. Chambonneau , S. Souiki-Figuigui , J. Postel-Pellerin , P. Canet
2016 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2016, Pasadena, United States. ⟨10.1109/IRPS.2016.7574580⟩
Conference papers hal-01418479v1

Indirect measurement of low tunneling currents through dielectrics using floating gate structures

J. Postel-Pellerin , P. Chiquet , Gilles Micolau , D. Boyer
IEEE International Conference on Dielectrics (ICD), Jul 2016, Montpellier, France. pp.1065-1068
Conference papers hal-01594071v1

Electromagnetic Analysis Perturbation using Chaos Generator

Thomas Sarno , Romain Wacquez , Edith Kussener , Philippe Maurine , Khalil Jradi
Truedevice 2016, Nov 2016, Barcelona, Spain
Conference papers hal-01455446v1

Optimization of the ATW Non-Volatile Memory for Connected Smart Objects

Jonathan Bartoli , V. Della Marca , Jérémy Postel-Pellerin , Julien Delalleau , Arnaud Regnier
2015 IEEE International Memory Workshop (IMW), May 2015, Monterey, France. ⟨10.1109/IMW.2015.7150299⟩
Conference papers hal-01760536v1

Advanced experimental setup for reliability and current consumption measurements of Flash non-volatile memories

V. Della Marca , T. Wakrim , J. Postel-Pellerin , P. Canet
IMEKO TC4, Sep 2014, Benevento, Italy
Conference papers hal-01760548v1

Improving Flash memory endurance and consumption with ultra-short channel-hot-electron programming pulses

J. Postel-Pellerin , P. Chiquet , V. Della Marca , T. Wakrim , G. Just
2014 International Semiconductor Conference (CAS), Oct 2014, Sinaia, France. ⟨10.1109/SMICND.2014.6966433⟩
Conference papers hal-01760566v1

A new non-volatile memory cell based on the flash architecture for embedded low energy applications: ATW (Asymmetrical Tunnel Window)

J. Bartoli , V. Della Marca , J. Delalleau , A. Regnier , S. Niel
2014 International Semiconductor Conference (CAS), Oct 2014, Sinaia, France. ⟨10.1109/SMICND.2014.6966409⟩
Conference papers hal-01760564v1
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Dynamic behavior of silicon nanocrystal memories during the hot carrier injection

V. Della Marca , L. Masoero , J. Postel-Pellerin , F. Lalande , J. Amouroux
IEEE International Conference on Solid Dielectrics (ICSD 2013), Jun 2013, Bologne, Italy. ⟨10.1109/ICSD.2013.6619820⟩
Conference papers hal-01760571v1

Determination of physical properties of semiconductor-oxide-semiconductor structures using a new fast gate current measurement protocol.

P. Chiquet , P. Masson , Gilles Micolau , R. Laffont , F. Lalande
11th IEEE International Conference on Solid Dielectrics , Jul 2013, Bologne, Italy
Conference papers hal-01315415v1
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Optimization of programming consumption of silicon nanocrystal memories for low power applications

V. Della Marca , L. Masoero , G. Molas , J. Amouroux , E. Petit-Faivre
2012 International Semiconductor Conference Dresden-Grenoble (ISCDG) - formerly known as the Semiconductor Conference Dresden (SCD), Sep 2012, Grenoble, France. ⟨10.1109/ISCDG.2012.6359988⟩
Conference papers hal-01760573v1
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How to improve the silicon nanocrystal memory cell performances for low power applications

V. Della Marca , J. Amouroux , G. Molas , J. Postel-Pellerin , F. Lalande
2012 International Semiconductor Conference (CAS 2012), Oct 2012, Sinaia, Romania. ⟨10.1109/SMICND.2012.6400686⟩
Conference papers hal-01760587v1
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Experimental study to push the Flash floating gate memories toward low energy applications

V. Della Marca , A. Regnier , J. Ogier , R. Simola , S. Niel
2011 International Semiconductor Device Research Symposium (ISDRS), Dec 2011, College Park, France. pp.73 - 77, ⟨10.1109/ISDRS.2011.6135271⟩
Conference papers hal-01760595v1

Energy consumption optimization in nonvolatile silicon nanocrystal memories

V. Della Marca , Julien Amouroux , Julien Delalleau , Laurent Lopez , Jean-Luc Ogier
2011 International Semiconductor Conference (CAS 2011), Oct 2011, Sinaia, France. ⟨10.1109/SMICND.2011.6095810⟩
Conference papers hal-01760593v1
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Fiabilité des Mémoires Non-Volatiles de type Flash en architectures NOR et NAND

Jérémy Postel-Pellerin
Micro et nanotechnologies/Microélectronique. Université de Provence - Aix-Marseille I, 2008. Français. ⟨NNT : ⟩
Theses tel-00370377v1