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Laurent RAYMOND

23
Documents
Affiliations actuelles
  • 179898

Publications

Scattering Theory of Non-Equilibrium Noise and Delta $T$ current fluctuations through a quantum dot

Benoît Grémaud , A. Popoff , Jérôme Rech , Thibaut Jonckheere , Laurent Raymond
Journal of Physics: Condensed Matter, 2022, 34 (18), pp.185301. ⟨10.1088/1361-648X/ac5200⟩
Article dans une revue hal-03433076v1
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Microscopic theory of photo-assisted electronic transport in normal-metal/BCS-superconductor junctions

Bruno Bertin-Johannet , Jérôme Rech , Thibaut Jonckheere , Benoît Grémaud , Laurent Raymond
Physical Review B, 2022, 105 (11), pp.115112. ⟨10.1103/PhysRevB.105.115112⟩
Article dans une revue hal-03824044v1
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Stochastic multiscale model for HfO2-based resistive random access memories with 1T1R configuration

Silvana Guitarra , Laurent Raymond , Lionel Trojman
Solid-State Electronics, 2021, 176, pp.107947. ⟨10.1016/j.sse.2020.107947⟩
Article dans une revue hal-03218283v1
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Stochastic based compact model to predict highly variable electrical characteristics of organic CBRAM devices

Silvana Guitarra , P. Mahato , D. Deleruyelle , L. Raymond , L. Trojman
Solid-State Electronics, 2021, 185, pp.108055. ⟨10.1016/j.sse.2021.108055⟩
Article dans une revue hal-03252877v1
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Theory of nonequilibrium noise in general multiterminal superconducting hybrid devices: Application to multiple Cooper pair resonances

R. Jacquet , A. Popoff , K.-I. Imura , Jérôme Rech , T. Jonckheere
Physical Review B, 2020, 102 (6), pp.064510. ⟨10.1103/PhysRevB.102.064510⟩
Article dans une revue hal-02926658v1
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Evidence of Majorana fermions in the noise characteristic of normal metal–topological superconductor junctions

Thibaut Jonckheere , Jérôme Rech , Laurent Raymond , Alex Zazunov , Reinhold Egger
Eur.Phys.J.ST, 2020, 229 (4), pp.577-592. ⟨10.1140/epjst/e2019-900119-5⟩
Article dans une revue hal-02497829v1
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Finite frequency noise in a normal metal–topological superconductor junction

D. Bathellier , L. Raymond , Thibaut Jonckheere , Jérôme Rech , A. Zazunov
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2019, 99 (10), pp.104502. ⟨10.1103/PhysRevB.99.104502⟩
Article dans une revue hal-02070910v1
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Quantum treatment of phonon scattering for modeling of three-dimensional atomistic transport

Y. Lee , M. Bescond , N. Cavassilas , D. Logoteta , L. Raymond
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2017, 95 (20), ⟨10.1103/PhysRevB.95.201412⟩
Article dans une revue hal-01694198v1

Stress influence on substitutional impurity segregation on dislocation loops in IV-IV semiconductors

A. Portavoce , J. Perrin Toinin , K. Hoummada , L. Raymond , G. Treglia
Computational Materials Science, 2016, 114, pp.23-32. ⟨10.1016/j.commatsci.2015.12.016⟩
Article dans une revue hal-01435206v1

Study of the scaling and the temperature for RERAM cells using the QPC model

Lionel Trojman , Silvana Guitarra , Luis Miguel Procel , Laurent Raymond
IEEE Latin America Transactions, 2016, 14 (12), pp.4693-4698. ⟨10.1109/TLA.2016.7816999⟩
Article dans une revue hal-02952173v1
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Anomalous quantum Hall effect induced by disorder in topological insulators

Laurent Raymond , Alberto Verga , Arnaud D Demion
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2015, 92, pp.075101. ⟨10.1103/PhysRevB.92.075101⟩
Article dans une revue hal-01500468v1
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Carrier injection engineering in nanowire transistors via dopant and shape monitoring of the access regions

Salim Berrada , Marc Bescond , Nicolas Cavassilas , Laurent Raymond , Michel Lannoo
Applied Physics Letters, 2015, 107 (15), pp.153508. ⟨10.1063/1.4933392⟩
Article dans une revue hal-03517633v1

3D real-space quantum transport simulation of nanowire MOS transistors: Influence of the ionized doping impurity

M. Bescond , M. Lannoo , Fabienne Michelini , L. Raymond , Marco Pala
Microelectronics Journal, 2009, 40, pp.756-758
Article dans une revue hal-00596132v1

Dielectric resonances of ordered passive arrays

Steffen Schäfer , Laurent Raymond , Gilbert Albinet
The European Physical Journal B: Condensed Matter and Complex Systems, 2005, 43, pp.81-92
Article dans une revue hal-00112266v1

Dielectric resonances in disordered media

Laurent Raymond , Jean-Marie Laugier , Steffen Schäfer , Gilbert Albinet
The European Physical Journal B: Condensed Matter and Complex Systems, 2003, 31, pp.355-364
Article dans une revue hal-00122376v1
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Finite frequency noise: an original probe for topological superconductors

Jérôme Rech , Didier Bathellier , Laurent Raymond , Thibaut Jonckheere , Alex Zazunov
25th International Conference on Noise and Fluctuations (ICNF 2019), Jun 2019, Neuchâtel, Switzerland
Communication dans un congrès hal-03509467v1

Resistive Switching Model of OxRAM Devices Based on Intrinsic Electrical Parameters

Silvana Guitarra , Lionel Trojman , Laurent Raymond
2019 Latin American Electron Devices Conference (LAEDC), Feb 2019, Armenia, Colombia. pp.1-4, ⟨10.1109/LAED.2019.8714728⟩
Communication dans un congrès hal-02951702v1

Model for resistive switching in bipolar Hafnium-based memories

Silvana Guitarra , Laurent Raymond , Lionel Trojman
WOMEN IN PHYSICS: 6th IUPAP International Conference on Women in Physics, 2019, Birmingham, United Kingdom. pp.060005, ⟨10.1063/1.5110123⟩
Communication dans un congrès hal-02953546v1

A phenomenological model of the resistive switching for Hf-based ReRAM devices

Silvana Guitarra , Lionel Trojman , Laurent Raymond
2018 IEEE Third Ecuador Technical Chapters Meeting (ETCM), Oct 2018, Cuenca, Ecuador. pp.1-5, ⟨10.1109/ETCM.2018.8580284⟩
Communication dans un congrès hal-02951710v1
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Time-resolved quantum transport for optoelectronics

Fabienne Michelini , Katawoura Beltako , M. Bescond , N. Cavassilas , L. Raymond
2017 IEEE International Electron Devices Meeting (IEDM), Dec 2017, San Francisco, France. ⟨10.1109/IEDM.2017.8268478⟩
Communication dans un congrès hal-01761825v1

Influence of ionized impurities in Silicon Nanowire Transistors

M. Bescond , M. Lannoo , L. Raymond , Fabienne Michelini , M. G. Pala
Proceedings of IWCE 2009, IEEE Conference Proceedings CFP09462-PRT, ISBN 978-1-4244-3926-3, 2009, Beijing, China. pp.137-140
Communication dans un congrès hal-00603874v1

Full 3D real-space NEGF simulation of transport and magnetotransport in Si-Nanowire FETs

C. Buran , M.G. Pala , M. Mouis , M. Bescond , M. Michelini
Fringe workshop ESSDERC 08, Edinburgh, UK, Sep 2008, Edinburgh, Ireland
Communication dans un congrès hal-00392550v1