Martin HYTCH
113
Documents
Présentation
Dr Martin Hytch develops quantitative electron microscopy techniques for materials science applications. After carrying out his thesis at the University of Cambridge on the quantitative analysis of high-resolution images (HRTEM) of compound semiconductors in 1991, he moved to France to work at the CECM-CNRS in Paris, where he subsequently joined the CNRS in 1995. He is notably the inventor of the Geometric Phase Analysis (GPA) technique for the determination of strain from high-resolution images and has applied the technique to a wide range of materials problems and nanostructures. He moved to the CEMES-CNRS in Toulouse in 2004 to work on aberration-corrected HRTEM and electron holography. In 2007, he invented the new technique of dark-field electron holography for the measurement of strain and in 2008, he was recipient of the prestigious European Microscopy Award (FEI-EMA), awarded every 4 years at the European Microscopy Congress. Between 2009 and 2014, he headed the nanomaterials group at the CEMES (30 permanent staff). He has authored or coauthored over 130 scientific papers and given 70 invited talks at conferences and workshops.
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In-Situ Electrical Biasing of Electrically Connected TEM Lamellae with Embedded NanodevicesISTFA 2021, Oct 2021, Phoenix, France. pp.190-195, ⟨10.31399/asm.cp.istfa2021p0190⟩
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Epitaxial BaTiO3 on Silicon and Silicon Germanium: Nanoscale Characterization, Ferroelectricity and Integration into TiN-Gated DevicesMRS Spring 2016, Mar 2016, Phœnix, États-Unis
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MOCVD Grown InGaN/GaN Three-Dimensional Islands: Growth Approaches, Strain-Composition Characterization, Exploitation for LEDsEnergy Materials Nanotechnology (EMN), May 2016, Dubrovnik, Croatia
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Advanced characterization of semiconductorsXV B-MRS, Sep 2016, Campinas, Brazil
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In situ electron microscopy of hard and soft matterJoint XIII Interamerican Microscopy Congress & XVI Venezuelan Congress for Microscopy and Microanalysis 'CIASEM-2015', Oct 2015, Isla de Margarita, Venezuela
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Growth parameters and tetragonality at the nanoscale of MBE epitaxial BaTiO3 films on SiEMRS Spring 2015, May 2015, Lille, France
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Measurement of crystalline lattice strain by transmission electron microscopy”14ème colloque de la Société Française des Microscopies, Jun 2015, Nice, France
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Development of TEM and SEM high brightness electron guns using cold field emission from a carbon nanotipPICO-2015, Apr 2015, Jülich, Netherlands
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Combining high-resolution X-ray reciprocal space mapping and dark-field electron holography for strain analysis in 20 nm pMOS structuresNanotechnology (IEEE-NANO) 2015 IEEE 15th International Conference on, 2015, Unknown, Unknown Region. pp.785-788, ⟨10.1109/NANO.2015.7388727⟩
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Process induced strains in FDSOI devices: a contribution of dark-field electron holographyMicro and Nano 2015, Oct 2015, Athenes, Greece
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Molecular beam epitaxy of ferroelectric complex oxides on silicon19th Conference on "Insulating Films on Semiconductors (INFOS), Jul 2015, Udine, Italy
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Realistic model of LED structure with InGaN quantum-dots active regionNanotechnology (IEEE-NANO) 2015 IEEE 15th International Conference on, 2015, Unknown, Unknown Region. pp.1543-1546, ⟨10.1109/NANO.2015.7388939⟩
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Complex oxides on semiconductors for nanoelectronic applicationsTMS 2015 144th Annual Meeting, 2015, Orlando, Fl, USA, United States
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Strain and Cation Stoichiometry in Epitaxial BaTiO3 Thin Films Grown on SiliconMRS 2015 Fall Meeting, Nov 2015, Boston, United States
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Strain imaging of processed layers and devices by dark field electron holographyCongress of the Electron Microscopy Society of India, Jul 2014, ??, India
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Epitaxial growth of BaTiO3 on semiconductor substrates by molecular beam epitaxy for ferroelectric devicesEMRS 2014 Fall meeting, Sep 2014, Warsaw, Poland
Communication dans un congrès
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Epitaxial growth of BaTiO3 on Si and SOI by molecular beam epitaxy for ferroelectric applicationsISAF 2014, May 2014, Penn State University in State College, PA, USA, United States
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Synthesis and applications of individual carbon-nanotube-supported carbon nanoconesIEEE Nanotechnology Materials and Devices Conference, Oct 2014, Aci Castello, Italy
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Epitaxy of ferroelectric complex oxides on semiconductors for field-effect devices10th International Conference on Physics of Advanced Materials, Sep 2014, Iasi, Romania
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Germanium condensation for co-integration: Strain study by dark-field electron holography Nanotechnology Materials and Devices Conference (NMDC), 2014 IEEE 9th, 2014, Unknown, Unknown Region. pp.34-36, ⟨10.1109/NMDC.2014.6997415⟩
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Epitaxial growth by molecular beam epitaxy of ferroelectric BaTiO3 on siliconWorkshop “Les oxydes pour l’optique et la photonique”, 2014, Meudon, France
Communication dans un congrès
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Local tetragonality of epitaxial BaTiO3 thin films on Si for ferroelectric applicationsIMC2014 - 18th International Microscopy congress, Sep 2014, Prague, Czech Republic
Communication dans un congrès
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Monolithic integration of epitaxial BaTiO3 on Si and SiGe for ferroelectric devicesAVS 61st International Symposium, 2014, Baltimore, USA, United States
Communication dans un congrès
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Deep green and monolithic white LEDs based on combination of short-period InGaN/GaN superlattice and InGaN QWsPHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors, 2011, Seoul, France. pp.253-254, ⟨10.1063/1.3666350⟩
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Optoelectronic structures with InAlN layers grown by MOVPE30th International Conference on the Physics of Semiconductors, Jul 2010, Séoul, South Korea. pp.107-108, ⟨10.1063/1.3666279⟩
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Strain Mapping of Layers and Devices Using Electron HolographyECS Trans. 2010, 2010, Unknown, Unknown Region. ⟨10.1149/1.3487533⟩
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Critical Analysis of Different Techniques for Measuring Strain in Si1-yCy Layers Grown by CVD on a Si SubstrateECS Transactions, May 2008, Unknown, Unknown Region. ⟨10.1149/1.2911510⟩
Communication dans un congrès
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Silica coated nanoparticles: synthesis,magnetic properties and spin structureISMANAM, Aug 2007, Corfou, Greece. pp.473-478, ⟨10.1016/j.jallcom.2008.08.121⟩
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Determination of strain within Si1-yCy layers grown by CVD on a Si substrateSymposium C – Quantitative Electron Microscopy for Materials Science, 2007, undetermined, France. pp.12-19, ⟨10.1557/PROC-1026-C07-03⟩
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Strained Si and Ge MOSFETs with high-K/metal gate stack for high mobility dual channel CMOSIEEE International Electron Devices Meeting, 2005, Dec 2005, Washington, United States. pp.137-140, ⟨10.1109/IEDM.2005.1609288⟩
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Matière condensée : organisation et dynamiqueRapport de conjoncture du comité national de la recherche scientifique : Édition 2014, CNRS Éditions, 2015, 978-2-271-08613-6
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Dark-Field Electron Holography for Strain MappingAlain Claverie; Mireille Mouis. Transmission Electron Microscopy in Micro-Nanoelectronics, Wiley-Blackwell, pp.81--106, 2013, ⟨10.1002/9781118579022.ch4⟩
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CHAPTER 6 - Aberration Correction With the SACTEM-Toulouse: From Imaging to DiffractionP.W.Hawkes. Advances in Imaging and Electron Physics vol 153, 153, Academic press, 2008, Aberration-Corrected Electron Microscopy, 978-0-12-374220-9. ⟨10.1016/S1076-5670(08)01006-9⟩
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