
Martin HYTCH
122
Documents
Présentation
Publications
41
40
30
25
24
16
13
11
11
11
11
10
10
10
9
9
9
9
8
8
7
7
7
7
6
5
5
5
5
4
4
4
4
4
4
4
4
4
4
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
69
36
3
2
1
Publications
|
AI Automation for Transmission Electron Microscope AlignmentEMC2024, Aug 2024, Copenhagen, Denmark
Communication dans un congrès
hal-04626351
v1
|
AI driven TEM configuration for better data acquisition18e Colloque de la Société Française des Microscopies, Société Française des Microscopies (SFmu), Jul 2023, Rouen, France
Communication dans un congrès
hal-04636457
v1
|
|
|
In-Situ Electrical Biasing of Electrically Connected TEM Lamellae with Embedded NanodevicesISTFA 2021, Oct 2021, Phoenix, France. pp.190-195, ⟨10.31399/asm.cp.istfa2021p0190⟩
Communication dans un congrès
hal-03412037
v1
|
Fabrication by neon ion milling and characterization of barium titanate nanopillarsInternational Symposium on Applications of Ferroelectrics, ISAF 2021, May 2021, Sydney (AUSTRALIA), Australia
Communication dans un congrès
hal-04618582
v1
|
|
Towards AI-automated TEMThe 20th International Microscopy Congress, International Federation of Societies for Microscopy (IFSM); Korean Society of Microscopy (KSM), Sep 2023, Busan (South Korea), South Korea
Communication dans un congrès
hal-04636435
v1
|
|
Epitaxial BaTiO3 on Silicon and Silicon Germanium: Nanoscale Characterization, Ferroelectricity and Integration into TiN-Gated DevicesMRS Spring 2016, Mar 2016, Phœnix, États-Unis
Communication dans un congrès
hal-02083658
v1
|
|
MOCVD Grown InGaN/GaN Three-Dimensional Islands: Growth Approaches, Strain-Composition Characterization, Exploitation for LEDsEnergy Materials Nanotechnology (EMN), May 2016, Dubrovnik, Croatia
Communication dans un congrès
hal-01763074
v1
|
|
Advanced characterization of semiconductorsXV B-MRS, Sep 2016, Campinas, Brazil
Communication dans un congrès
hal-01767758
v1
|
|
In situ electron microscopy of hard and soft matterJoint XIII Interamerican Microscopy Congress & XVI Venezuelan Congress for Microscopy and Microanalysis 'CIASEM-2015', Oct 2015, Isla de Margarita, Venezuela
Communication dans un congrès
hal-02123302
v1
|
|
Growth parameters and tetragonality at the nanoscale of MBE epitaxial BaTiO3 films on SiEMRS Spring 2015, May 2015, Lille, France
Communication dans un congrès
hal-02081622
v1
|
|
Combining high-resolution X-ray reciprocal space mapping and dark-field electron holography for strain analysis in 20 nm pMOS structuresNanotechnology (IEEE-NANO) 2015 IEEE 15th International Conference on, 2015, Unknown, Unknown Region. pp.785-788, ⟨10.1109/NANO.2015.7388727⟩
Communication dans un congrès
hal-01719495
v1
|
|
Development of TEM and SEM high brightness electron guns using cold field emission from a carbon nanotipPICO-2015, Apr 2015, Jülich, Netherlands
Communication dans un congrès
hal-02123316
v1
|
|
Molecular beam epitaxy of ferroelectric complex oxides on silicon19th Conference on "Insulating Films on Semiconductors (INFOS), Jul 2015, Udine, Italy
Communication dans un congrès
hal-01489594
v1
|
|
Process induced strains in FDSOI devices: a contribution of dark-field electron holographyMicro and Nano 2015, Oct 2015, Athenes, Greece
Communication dans un congrès
hal-01763625
v1
|
|
Realistic model of LED structure with InGaN quantum-dots active regionNanotechnology (IEEE-NANO) 2015 IEEE 15th International Conference on, 2015, Unknown, Unknown Region. pp.1543-1546, ⟨10.1109/NANO.2015.7388939⟩
Communication dans un congrès
hal-01721150
v1
|
|
Strain and Cation Stoichiometry in Epitaxial BaTiO3 Thin Films Grown on SiliconMRS 2015 Fall Meeting, Nov 2015, Boston, United States
Communication dans un congrès
hal-01965445
v1
|
|
Complex oxides on semiconductors for nanoelectronic applicationsTMS 2015 144th Annual Meeting, 2015, Orlando, Fl, USA, United States
Communication dans un congrès
hal-01489569
v1
|
|
Measurement of crystalline lattice strain by transmission electron microscopy”14ème colloque de la Société Française des Microscopies, Jun 2015, Nice, France
Communication dans un congrès
hal-01763051
v1
|
|
Strain imaging of processed layers and devices by dark field electron holographyCongress of the Electron Microscopy Society of India, Jul 2014, ??, India
Communication dans un congrès
hal-01763638
v1
|
|
Epitaxial growth of BaTiO3 on semiconductor substrates by molecular beam epitaxy for ferroelectric devicesEMRS 2014 Fall meeting, Sep 2014, Warsaw, Poland
Communication dans un congrès
hal-01489916
v1
|
|
Epitaxial growth of BaTiO3 on Si and SOI by molecular beam epitaxy for ferroelectric applicationsISAF 2014, May 2014, Penn State University in State College, PA, USA, United States
Communication dans un congrès
hal-01489874
v1
|
|
Synthesis and applications of individual carbon-nanotube-supported carbon nanoconesIEEE Nanotechnology Materials and Devices Conference, Oct 2014, Aci Castello, Italy
Communication dans un congrès
hal-02123308
v1
|
|
Epitaxy of ferroelectric complex oxides on semiconductors for field-effect devices10th International Conference on Physics of Advanced Materials, Sep 2014, Iasi, Romania
Communication dans un congrès
hal-01965375
v1
|
|
Germanium condensation for co-integration: Strain study by dark-field electron holography Nanotechnology Materials and Devices Conference (NMDC), 2014 IEEE 9th, 2014, Unknown, Unknown Region. pp.34-36, ⟨10.1109/NMDC.2014.6997415⟩
Communication dans un congrès
hal-01719498
v1
|
|
Epitaxial growth by molecular beam epitaxy of ferroelectric BaTiO3 on siliconWorkshop “Les oxydes pour l’optique et la photonique”, 2014, Meudon, France
Communication dans un congrès
hal-01489873
v1
|
|
Local tetragonality of epitaxial BaTiO3 thin films on Si for ferroelectric applicationsIMC2014 - 18th International Microscopy congress, Sep 2014, Prague, Czech Republic
Communication dans un congrès
hal-01489876
v1
|
|
Monolithic integration of epitaxial BaTiO3 on Si and SiGe for ferroelectric devicesAVS 61st International Symposium, 2014, Baltimore, USA, United States
Communication dans un congrès
hal-01490296
v1
|
|
|
Optoelectronic structures with InAlN layers grown by MOVPE30th International Conference on the Physics of Semiconductors, Jul 2010, Séoul, South Korea. pp.107-108, ⟨10.1063/1.3666279⟩
Communication dans un congrès
hal-01736041
v1
|
Determination of strain within Si1-yCy layers grown by CVD on a Si substrateSymposium C – Quantitative Electron Microscopy for Materials Science, 2007, undetermined, France. pp.12-19, ⟨10.1557/PROC-1026-C07-03⟩
Communication dans un congrès
hal-01736057
v1
|
|
|
Deep green and monolithic white LEDs based on combination of short-period InGaN/GaN superlattice and InGaN QWsPHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors, 2011, Seoul, France. pp.253-254, ⟨10.1063/1.3666350⟩
Communication dans un congrès
hal-01736043
v1
|
Strain Mapping of Layers and Devices Using Electron HolographyECS Trans. 2010, 2010, Unknown, Unknown Region. ⟨10.1149/1.3487533⟩
Communication dans un congrès
hal-01736051
v1
|
|
|
Silica coated nanoparticles: synthesis,magnetic properties and spin structureISMANAM, Aug 2007, Corfou, Greece. pp.473-478, ⟨10.1016/j.jallcom.2008.08.121⟩
Communication dans un congrès
hal-00662962
v1
|
Critical Analysis of Different Techniques for Measuring Strain in Si1-yCy Layers Grown by CVD on a Si SubstrateECS Transactions, May 2008, Unknown, Unknown Region. ⟨10.1149/1.2911510⟩
Communication dans un congrès
hal-01736065
v1
|
|
Strained Si and Ge MOSFETs with high-K/metal gate stack for high mobility dual channel CMOSIEEE International Electron Devices Meeting, 2005, Dec 2005, Washington, United States. pp.137-140, ⟨10.1109/IEDM.2005.1609288⟩
Communication dans un congrès
hal-01736083
v1
|
Matière condensée : organisation et dynamiqueRapport de conjoncture du comité national de la recherche scientifique : Édition 2014, CNRS Éditions, 2015, 978-2-271-08613-6
Chapitre d'ouvrage
hal-01461528
v1
|
|
Dark-Field Electron Holography for Strain MappingAlain Claverie; Mireille Mouis. Transmission Electron Microscopy in Micro-Nanoelectronics, Wiley-Blackwell, pp.81--106, 2013, ⟨10.1002/9781118579022.ch4⟩
Chapitre d'ouvrage
hal-01736026
v1
|
|
CHAPTER 6 - Aberration Correction With the SACTEM-Toulouse: From Imaging to DiffractionP.W.Hawkes. Advances in Imaging and Electron Physics vol 153, 153, Academic press, 2008, Aberration-Corrected Electron Microscopy, 978-0-12-374220-9. ⟨10.1016/S1076-5670(08)01006-9⟩
Chapitre d'ouvrage
hal-01742322
v1
|
Chargement...
Chargement...