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Martin HYTCH

12
Documents

Présentation

Dr Martin Hytch develops quantitative electron microscopy techniques for materials science applications. After carrying out his thesis at the University of Cambridge on the quantitative analysis of high-resolution images (HRTEM) of compound semiconductors in 1991, he moved to France to work at the CECM-CNRS in Paris, where he subsequently joined the CNRS in 1995. He is notably the inventor of the Geometric Phase Analysis (GPA) technique for the determination of strain from high-resolution images and has applied the technique to a wide range of materials problems and nanostructures. He moved to the CEMES-CNRS in Toulouse in 2004 to work on aberration-corrected HRTEM and electron holography. In 2007, he invented the new technique of dark-field electron holography for the measurement of strain and in 2008, he was recipient of the prestigious European Microscopy Award (FEI-EMA), awarded every 4 years at the European Microscopy Congress. Between 2009 and 2014, he headed the nanomaterials group at the CEMES (30 permanent staff). He has authored or coauthored over 130 scientific papers and given 70 invited talks at conferences and workshops.

Publications

florent-houdellier
"alain-claverie"

Mechanics of silicon nitride thin-film stressors on a transistor-like geometry

Shay Reboh , P. Morin , Martin Hÿtch , Florent Houdellier , Alain Claverie
APL Materials, 2013, 1 (4), ⟨10.1063/1.4826545⟩
Article dans une revue hal-01724108v1

Strain mapping in layers and devices by electron holography

Martin Hÿtch , Nikolay Cherkashin , Shay Reboh , Florent Houdellier , Alain Claverie
physica status solidi (a), 2011, 208 (3), pp.580-583. ⟨10.1002/pssa.201000281⟩
Article dans une revue hal-01736038v1
Image document

End of range defects in Ge

S. Koffel , Nikolay Cherkashin , Florent Houdellier , Martin Hÿtch , Gérard Benassayag
Journal of Applied Physics, 2009, 105, pp.126110. ⟨10.1063/1.3153985⟩
Article dans une revue hal-01736054v1
Image document

Strain mapping of tensiley strained silicon transistors with embedded Si1−yCy source and drain by dark-field holography

Florian Hüe , Martin Hÿtch , Florent Houdellier , Hugo Bender , Alain Claverie
Applied Physics Letters, 2009, 95 (7), pp.73103 - 73103. ⟨10.1063/1.3192356⟩
Article dans une revue hal-01742020v1

Selective growth of tensily strained Si1−yCy films on patterned Si substrates

A. Gouye , Florian Hüe , A. Halimaoui , O. Kermarrec , Y. Campidelli
Materials Science in Semiconductor Processing, 2009, 12 (1-2), pp.34 - 39. ⟨10.1016/j.mssp.2009.07.006⟩
Article dans une revue hal-01742015v1
Image document

On the influence of elastic strain on the accommodation of carbon atoms into substitutional sites in strained Si:C layers grown on Si substrates

Nikolay Cherkashin , Martin Hÿtch , Florent Houdellier , Florian Hüe , Vincent Paillard
Applied Physics Letters, 2009, 94 (14), pp.141910. ⟨10.1063/1.3116648⟩
Article dans une revue hal-00417300v1

Strain mapping in MOSFETS by high-resolution electron microscopy and electron holography

Florian Hüe , Martin Hÿtch , Florent Houdellier , Etienne Snoeck , Alain Claverie
Materials Science and Engineering: B, 2008, 154-155, pp.221 - 224. ⟨10.1016/j.mseb.2008.10.020⟩
Article dans une revue hal-01742010v1
Image document

Direct Mapping of Strain in a Strained Silicon Transistor by High-Resolution Electron Microscopy

Florian Hüe , Martin Hÿtch , Hugo Bender , Florent Houdellier , Alain Claverie
Physical Review Letters, 2008, 100 (15), ⟨10.1103/PhysRevLett.100.156602⟩
Article dans une revue hal-01741994v1

Dark-Field Electron Holography for Strain Mapping

Martin Hÿtch , Florent Houdellier , Nikolay Cherkashin , Shay Reboh , Elsa Javon
Alain Claverie; Mireille Mouis. Transmission Electron Microscopy in Micro-Nanoelectronics, Wiley-Blackwell, pp.81--106, 2013, ⟨10.1002/9781118579022.ch4⟩
Chapitre d'ouvrage hal-01736026v1