Martin HYTCH
7
Documents
Présentation
Dr Martin Hytch develops quantitative electron microscopy techniques for materials science applications. After carrying out his thesis at the University of Cambridge on the quantitative analysis of high-resolution images (HRTEM) of compound semiconductors in 1991, he moved to France to work at the CECM-CNRS in Paris, where he subsequently joined the CNRS in 1995. He is notably the inventor of the Geometric Phase Analysis (GPA) technique for the determination of strain from high-resolution images and has applied the technique to a wide range of materials problems and nanostructures. He moved to the CEMES-CNRS in Toulouse in 2004 to work on aberration-corrected HRTEM and electron holography. In 2007, he invented the new technique of dark-field electron holography for the measurement of strain and in 2008, he was recipient of the prestigious European Microscopy Award (FEI-EMA), awarded every 4 years at the European Microscopy Congress. Between 2009 and 2014, he headed the nanomaterials group at the CEMES (30 permanent staff). He has authored or coauthored over 130 scientific papers and given 70 invited talks at conferences and workshops.
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Dark-field electron holography as a recording of crystal diffraction in real space: a comparative study with high-resolution X-ray diffraction for strain analysis of MOSFETsJournal of Applied Crystallography, 2020, 53 (4), pp.885-895. ⟨10.1107/S1600576720006020⟩
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Strain evolution of SiGe-on-insulator obtained by the Ge-condensation techniqueAPL Materials, 2019, 7 (4), pp.041120. ⟨10.1063/1.5088441⟩
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Strain/composition interplay in thin SiGe layers on insulator processed by Ge condensationMaterials Science in Semiconductor Processing, 2016, 42, pp.251 - 254. ⟨10.1016/j.mssp.2015.07.034⟩
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Combining high-resolution X-ray reciprocal space mapping and dark-field electron holography for strain analysis in 20 nm pMOS structuresNanotechnology (IEEE-NANO) 2015 IEEE 15th International Conference on, 2015, Unknown, Unknown Region. pp.785-788, ⟨10.1109/NANO.2015.7388727⟩
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Process induced strains in FDSOI devices: a contribution of dark-field electron holographyMicro and Nano 2015, Oct 2015, Athenes, Greece
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Strain imaging of processed layers and devices by dark field electron holographyCongress of the Electron Microscopy Society of India, Jul 2014, ??, India
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Germanium condensation for co-integration: Strain study by dark-field electron holography Nanotechnology Materials and Devices Conference (NMDC), 2014 IEEE 9th, 2014, Unknown, Unknown Region. pp.34-36, ⟨10.1109/NMDC.2014.6997415⟩
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