
Matthieu MORET
54
Documents
Publications
Publications
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Optimization of the shunt resistance of Cu(In,Ga)Se2 cells for indoor applications13èmes Journées Nationales du Photovoltaïque (JNPV 2023), Dec 2023, Dourdan, France.
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Toward the Reproducible Growth of Graphene on Wide SiC Steps: A Study of the Geometric Properties of 4H-SiC (0001) SubstratesECSCRM 2021, Oct 2021, Tours (FR), France. pp.59-63, ⟨10.4028/p-1ak21z⟩
Communication dans un congrès
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Optical investigations and strain effect in AlGaN/GaN epitaxial layers33RD INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, 2017, PEKIN, China. pp.UNSP 012021, ⟨10.1088/1742-6596/864/1/012021⟩
Communication dans un congrès
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X-ray diffraction study of A- plane non polar InN epilayer grown by MOCVDGALLIUM NITRIDE MATERIALS AND DEVICES X, conferenceOrganizer, 2015, San Francisco, United States. pp.936328, ⟨10.1117/12.2077513⟩
Communication dans un congrès
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In-situ monitoring of CuInSe2 thin films growth by light scatteringE-MRS 2014 Spring Meeting, Symposium A, Thin-Film Chalcogenide Photovoltaic Materials, Daniel Abou-Ras; Marika Edoff; Takashi Minemoto; David Mitzi; Alessandro Romeo, May 2014, Lille, France. pp.276, ⟨10.1016/j.tsf.2014.10.083⟩
Communication dans un congrès
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High excitation photoluminescence effects as a probing tool for the growth of Cu(In,Ga)Se-2PHYSICS SIMULATION AND PHOTONIC ENGINEERING OF PHOTOVOLTAIC DEVICES IV, 2015, San Francisco, California, United States. pp.93581A, ⟨10.1117/12.2076938⟩
Communication dans un congrès
hal-01134308
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(112) and (220)/(204)-oriented CuInSe2 thin films grown by co-evaporation under vacuumE-MRS Spring Meeting, May 2012, Strasbourg, France. pp.143-147, ⟨10.1016/j.tsf.2013.01.053⟩
Communication dans un congrès
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Annealing effect of CdS thin films deposited by chemical bath deposition on different substratesPhotovoltaic Specialists Conference (PVSC), 2013 IEEE 39th, Jun 2013, Tampa, United States. pp.1173, ⟨10.1109/PVSC.2013.6744349⟩
Communication dans un congrès
hal-01009387
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Unintentional incorporation of H and related structural and free-electron properties of c- and a-plane InNE-MRS ICAM IUMRS 2011 Spring Meeting – Symposium H, May 2011, Nice, France. pp.91-94, ⟨10.1002/pssa.201100175⟩
Communication dans un congrès
istex
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Phages recognizing the Indium Nitride semiconductor surface via their peptidesE-MRS Symposium on Peptide-based Materials - from Nanostructures to Applications, Jun 2010, Strasbourg (FRANCE), France. pp.143-147
Communication dans un congrès
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MOVPE growth and characterization of polar, semipolar and nonpolar InN on sapphire substrateISGN3, Jul 2010, France. pp.1183-1186, ⟨10.1002/pssa.201001192⟩
Communication dans un congrès
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Free electron properties and hydrogen in InN grown by MOVPEISGN3, Jul 2010, France. pp.1179-1182, ⟨10.1002/pssa.201001151⟩
Communication dans un congrès
istex
hal-00633877
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MOVPE growth and characterization of indium nitride on C-, A-, M-, and R-plane sapphireSymposium on Group III Nitride Semiconductors held at the 2009 EMRS Spring Meeting, Jun 2009, Strasbourg (FRANCE), France. pp.24-28
Communication dans un congrès
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Recent advances in the MOVPE growth of indium nitrideSymposium on Group III Nitride Semiconductors held at the 2009 EMRS Spring Meeting, Jun 2009, Strasbourg (FRANCE), France. pp.9-18
Communication dans un congrès
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Recent Advances in the MOVPE Epitaxy of Indium NitrideCIMTEC 2010 _ Forum on new materials, Jun 2010, Italy
Communication dans un congrès
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Alternative precursors for MOVPE growth of InN and GaN at low temperature2nd International Symposium on the growth of III-NItrides (ISGN-2), Jul 2008, Laforet Shuzenji, Izu, Japan. pp.2791, ⟨10.1016/j.jcrysgro.2009.01.038⟩
Communication dans un congrès
istex
hal-00390309
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InN excitonic deformation potentials determined experimentally2nd International Symposium on Growth of III-Nitrides (ISGN-2), Jul 2008, Laforet Shuzenji, Izu, Japan. pp.2798, ⟨10.1016/j.jcrysgro.2009.01.010⟩
Communication dans un congrès
istex
hal-00390295
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MOVPE growth of InN films and quantum dotsE-MRS Fall Meeting, Sep 2009, Poland
Communication dans un congrès
hal-00807795
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MOVPE growth of InN buffer layers on sapphire2nd International Symposium on the gGrowth of III-Nitrides, Jul 2008, Laforet Shuzenji, Izu, Japan. pp.2787, ⟨10.1016/j.jcrysgro.2009.01.008⟩
Communication dans un congrès
istex
hal-00390306
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Growth of InN films and nanostructures by MOVPE2nd International Symposium on Growth of III-Nitride (ISGN-2), Jul 2008, Laforet Shuzenji, Izu, Japan. pp.2761, ⟨10.1016/j.jcrysgro.2009.01.037⟩
Communication dans un congrès
istex
hal-00390294
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Optical, structural investigations and band-gap bowing parameter of GaInN alloys2nd International Symposium on Growth of III-Nitride (ISGN-2), Jul 2008, Laforet Shuzenji, Izu, Japan. pp.2795, ⟨10.1016/j.jcrysgro.2009.01.009⟩
Communication dans un congrès
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hal-00390296
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Modeling of nitride semiconductor based double heterostructure tunnel diodesSymposium on New Applications for Wide-Bandgap Semiconductors, Apr 2003, SAN FRANCISCO (CA), United States. pp.227-232
Communication dans un congrès
hal-00540478
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High reflectivity AlGaN/GaN Bragg mirrors grown by MOCVD for microcavities applications.Symposium on New Applications for Wide-Bandgap Semiconductors, Apr 2003, SAN FRANCISCO (CA), United States. pp.233-238
Communication dans un congrès
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Photonic crystal properties of GaN infilled artificial opals25th International Conference on the Physics of Semiconductors (ICPS25), Sep 2000, OSAKA (JAPAN), Japan. pp.1741-1742
Communication dans un congrès
hal-00546180
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Croissance cristalline: une évolution vers des procédés complexesScience des matériaux [cond-mat.mtrl-sci]. Université de Montpellier, 2022
HDR
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