Mohamed Boutchich
- Laboratoire Génie électrique et électronique de Paris (GeePs)
Publications
Publications
Time Resolved Emission Spectroscopy of Si-doped MBE grown GaAsPBiPVSEC-36, Chulalongkorn University, Nov 2025, Bangkok, Thailand |
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Power factor of low dimensional materials for thermoelectric applications10th International Nanoelectronic Conference (INEC 2025), IEEE Taiwan and Singapore chapter, Jan 2025, Tamsui, Taiwan |
Growth and thermoelectric properties of few-layered Bismuth OxyselenideIEEE 23rd International Conference on Nanotechnology (IEEE-NANO), IEEE, Jul 2023, Jeju City, South Korea |
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Challenges in characterization of low dimensional materials: application to thermoelectricsSéminaire invité IPB Bogor Indonésie, Mar 2023, INSTITUT PERTANIAN BOGOR University, Indonesia (remote lecture), France |
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Thermoelectric properties at the nanoscaleInvited Talk KEK, High Energy Accelerator Research Organization (KEK)-Tsukuba, Aug 2022, Tsukuba (JAPAN), France |
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Probing of the electronic properties of graphene and 2d analogues: ARPES & PEEM on graphene-based heterostructuresAWPESM2019 Workshop - invited speaker, Synchrotron Light Research Institution (SLRI), Nakhon Ratchasima, Thailand, Jun 2019, Nakhon Ratchasima, Thailand |
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Oral presentation - Work function mapping of functionalized graphene grown on 4H-SiC (0001) substrateInternational Electron Devices & Materials Symposium (IEDMS2019), Chang Gung University, Oct 2019, Taoyuan, Taiwan |
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Spatio-temporal observation of photogenerated electron dynamics in twisted grapheneThe 4th Advanced Electromagnetics Symposium, Jul 2016, Malaga, Spain |
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Etude du Dopage de Graphène Epitaxial sur SiC(0001) par Spectroscopies de PhotoélectronsELSPEC'16, 7eme conférence francophone sur les spectroscopies d’électrons, May 2016, Meudon, France |
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Probing the electronic properties of CVD graphene superlatticesNanotechnology Materials and Devices Conference (NMDC), 2016 IEEE, Sep 2016, Toulouse, France. ⟨10.1109/NMDC.2016.7777071⟩ |
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Graphene and beyond for heterojunctions - Research opportunitiesXNEM Workshop, AASTMT, Oct 2015, le Caire, Egypt |
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Characterization of graphene and applications to heterojunctionsInternational Conference on Novel Material : Engineering and Properties - Soleil 2015, Synchrotron Soleil, Sep 2015, Saclay, France |
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Spatially resolved photoluminescence on multi stack InAs quantum dotsInternational Workshop on Nanostructures Characterization and Nanomaterials – Bangkok 2015, Mohamed Boutchich - ICT ASIA 2D NANOTEC, Aug 2015, Bangkok, Thailand |
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Probing and Modulation of the electronic properties of graphene for heterostructuresNanodevices Workshop - CGU Taiwan, Pr C S Lai, Dec 2015, Taoyuan, Taiwan |
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Raman spectroscopy on Bi and Trilayer flakes of grapheneNano-TN 2015, Feb 2015, Hammamet, Tunisia |
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Electronic properties of CVD Graphene capped with p and n-type doped amorphous silicon26th International Conference on Amorphous and nanocrystalline Semiconductors (ICANS 26), Sep 2015, Aachen, Germany |
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Work function engineering of doped Trilayer graphene grown on 4H-SiC (0001)ANM2015,6th International Conference on Advanced Nanomaterials, Jul 2015, Aveiro, Portugal |
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Coupling on a confocal imaging system µ-Raman, µ-PL, AFM and electrical extensions at a sub micrometric scaleInternational Workshop on Nanostructure Characterization and Nanomaterials, Thai Organic and Printed Electronics Innovation Center (TOPIC) / NECTEC, Aug 2015, Bangkok, Thailand |
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Characterization of a-Si:H/c-Si heterojunction by temperature dependent modulated photoluminescence26th International Conference on Amorphous and nanocrystalline Semiconductors (ICANS 26), Sep 2015, Aachen, Germany |
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TEMPERATURE DEPENDENT PHOTOLUMINESCENCE IN SILICON BASED HETEROJUNCTION SOLAR CELLEU PVSEC 2014, Sep 2014, Amsterdam, Netherlands. pp.1214-1217 |
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Preface: The Irago Conference 2014: A 360 Degree Outlook at Critical Scientific and Technological Challenges for a Sustainable SocietyThe Irago Conference 2014, Oct 2014, Tsukuba-city, Japan. pp.1-2 (2015), ⟨10.1063/1.4913535⟩ |
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Research & Partnership opportunities in III-V on Si at LGEP and SupélecFrance-USA Workshop on Quantum Engineered High Efficiency Photvoltaics, Jun 2014, Houston, United States |
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Doping and characterization of trilayer graphene on 4H-SiC (0001)International Workshop on Nanodevices and Materials, Nov 2014, Tokyo, Japan |
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Electronic Properties of Large Area Nitrogen Doped Trilayer Graphene on 4H-SiC (0001)IRAGO 2014, Nov 2014, Tsukuba, Japan. pp.7PM-4 |
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Photoluminescence techniques for heterojunction solar cell characterizationJNPV 2013, Dec 2013, Dourdan, France |
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Photoluminescence techniques for heterojunction solar cell characterizationJournées Junior FédESol 2013, Dec 2013, Dourdan, France |
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Ultraviolet photodetectors based on hydrogenated/oxidized diamond surfaces characterization of silicon heterojunctions for solar cellsIUMRS-ICEM 2012, Mar 2012, Yokohama, Japan |
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Graphene oxide reduced through chemical and biological processesIrago Conference 2012, Nov 2012, Aichi, Japan |
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Amorphous and microcrystalline silicon diamond based heterojunctionsICANS24, Aug 2011, Nara, Japan |
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A new infrared microsensorSensor 2003, 2003, Nuremberg, Germany |
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Réalisation de nouveaux microradiomètres sur silicium. Etude des propriétés thermoélectriques du polysilicium dopé N et P8èmes Journées Nationales Microélectronique et Optoélectronique, JNMO 2001, 2001, Aussois, France |
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Thermoelectric infrared microsensor using suspended membranes made by silicon micromachiningSPIE 15th Annual International Symposium on Aerospace/Defense Sensing, Simulation and Controls, Infrared Technology and Applications, AeroSense 2001, Apr 2001, Orlando, FL, United States. pp.380-388, ⟨10.1117/12.445332⟩ |
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Méthode de mesure de l'absorptivité différentielle de 2 matériaux. Application en UV et IRConférence Métrologie 2001, 2001, Saint Louis, France |
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New developments on IR distribution-patterned microradiometers familySPIE 15th Annual International Symposium on Aerospace/Defense Sensing, Simulation and Controls, Infrared Technology and Applications, AeroSense 2001, Apr 2001, Orlando, United States. pp.389-396, ⟨10.1117/12.445333⟩ |
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A new ultra-violet microradiometerSensors 2001, 2001, Nuremberg, Germany. pp.221-226 |
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Nouveau microcapteur de rayonnement ultraviolet à absorption différentielleJournées Micro et Nano Technologies, 2000, Paris, France |
Method for obtaining a graphene-based field effect transistor, in particular a memory field effect transistor, equipped with an embedded dielectric elementFrance, Patent n° : EP 16 305 161.8. 2016 |
Microcapteurs de rayonnement infrarouge en technologie silicium2002 |
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Bidimensional materials for low power and energy harvesting devices: Modulation of the electronic properties of grapheneEngineering Sciences [physics]. Université Pierre et Marie Curie (Paris 6), 2016 |