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Mohamed Boutchich
Dr Boutchich Mohamed
Associate Professor in Electrical Engineering
Sorbonne University
13
Documents
Affiliations actuelles
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Electronic properties of embedded graphene: doped amorphous silicon/CVD graphene heterostructuresJournal of Physics: Condensed Matter, 2016, 28 (40), pp.404001. ⟨10.1088/0953-8984/28/40/404001⟩
Article dans une revue
hal-01363551v1
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Tuning the work function of monolayer graphene on 4H-SiC (0001) with nitric acidNanotechnology, 2015, 26 (44), pp.445702. ⟨10.1088/0957-4484/26/44/445702⟩
Article dans une revue
hal-01244484v1
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Characterization of N-doped multilayer graphene grown on 4H-SiC (0001)AIP Conference Proceedings, 2015, 1649, pp.8. ⟨10.1063/1.4913537⟩
Article dans une revue
hal-01239163v1
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Characterization of graphene oxide reduced through chemical and biological processesJournal of Physics: Conference Series, 2013, 433 (1), pp.012001. ⟨10.1088/1742-6596/433/1/012001⟩
Article dans une revue
hal-00931274v1
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Etude du Dopage de Graphène Epitaxial sur SiC(0001) par Spectroscopies de PhotoélectronsELSPEC'16, 7eme conférence francophone sur les spectroscopies d’électrons, May 2016, Meudon, France
Communication dans un congrès
hal-01449031v1
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Work function engineering of doped Trilayer graphene grown on 4H-SiC (0001)ANM2015,6th International Conference on Advanced Nanomaterials, Jul 2015, Aveiro, Portugal
Communication dans un congrès
hal-01257881v1
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Electronic properties of CVD Graphene capped with p and n-type doped amorphous silicon26th International Conference on Amorphous and nanocrystalline Semiconductors (ICANS 26), Sep 2015, Aachen, Germany
Communication dans un congrès
hal-01232115v1
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Doping and characterization of trilayer graphene on 4H-SiC (0001)International Workshop on Nanodevices and Materials, Nov 2014, Tokyo, Japan
Communication dans un congrès
hal-01104494v1
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Electronic Properties of Large Area Nitrogen Doped Trilayer Graphene on 4H-SiC (0001)IRAGO 2014, Nov 2014, Tsukuba, Japan. pp.7PM-4
Communication dans un congrès
hal-01104492v1
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Graphene oxide reduced through chemical and biological processesIrago Conference 2012, Nov 2012, Aichi, Japan
Communication dans un congrès
hal-00779022v1
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Role of Anions in the AuCl3-Doping Trilayers N-doped Graphene on 4H-SiC (0001)IRAGO 2014, Nov 2014, Tsukuba, Japan. pp.7P8
Poster de conférence
hal-01104496v1
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Engineering of CVD graphene optoelectronic properties Application as transparent electrode in solar cellsCMD25-JMC14, Aug 2014, Paris, France
Poster de conférence
hal-01104502v1
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Nitric Acid doping of epitaxial graphene on SiC (0001) substrateGraphene 2014, May 2014, Toulouse, France. Proceedings of the 4th edition of Graphene Conference
Poster de conférence
hal-01104503v1
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