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Mounira Bouarroudj

Maître de conférences à l'UPEC et rattachée au laboratoire SATIE
9
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  • 1051130

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Publications

"ali-ibrahim"
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Microstructural evolution during the crack propagation at the bond-wire contact area of IGBT power modules upon power cycling

Mustafa Shqair , Zoubir Khatir , Ali Ibrahim , Ayda Halouani , Mounira Bouarroudj-Berkani
Microelectronics Reliability, 2022, ⟨10.1016/j.microrel.2022.114635⟩
Article dans une revue hal-03788643v1

A combined physicochemical-microstructural approach to predict the crack path at the topside interconnections in IGBT power devices

Mustafa Shqair , Zoubir Khatir , Ali Ibrahim , Mounira Bouarroudj-Berkani , Ayda Halouani
Microelectronics Reliability, 2022, 132, pp.114516. ⟨10.1016/j.microrel.2022.114516⟩
Article dans une revue hal-03656143v1

Robustness of 1.2 kV SiC MOSFET devices

Dhouha Othman , Stéphane Lefebvre , Mounira Bouarroudj-Berkani , Zoubir Khatir , Ali Ibrahim
Microelectronics Reliability, 2013, 53 (9-11), pp.1735-1738. ⟨10.1016/j.microrel.2013.07.072⟩
Article dans une revue hal-00876938v1

Comparison Study on Performances and Reliability between MOSFET & JFET Silicon carbide technologies - Abilities for Aeronautics Application

D Othman , Mounira Berkani , S Lefebvre , Ali Ibrahim , Zoubir Khatir
Microelectronics Reliability, 2012, 52 (10), pp.1859-1864. ⟨10.1016/j.microrel.2012.06.078⟩
Article dans une revue hal-00868886v1

Comparison study on performances and robustness between SiC MOSFET & JFET devices - Abilities for aeronautics application

Dhouha Othman , Mounira Bouarroudj-Berkani , Stéphane Lefebvre , Zoubir Khatir , Ali Ibrahim
Microelectronics Reliability, 2012, 52 (9-10), pp.1859-1864
Article dans une revue hal-00739653v1

Condition monitoring and evaluation of Ron degradation during power cycling of SiC-Mosfets power modules

Ali Ibrahim , Zoubir Khatir , Mounira Bouarroudj-Berkani
International Conference on integrated Power Electronics Systems (CIPS), Mar 2022, Berlin, Germany
Communication dans un congrès hal-03656145v1

Physicochemical-microstructural approach for modeling the crack passage at topside metallic parts in IGBT semiconductor power electronics

Mustafa Shqair , Zoubir Khatir , Ali Ibrahim , Mounira Bouarroudj-Berkani , Ayda Halouani
2022 23rd International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), Apr 2022, St Julian, Malta. pp.1-6, ⟨10.1109/EuroSimE54907.2022.9758895⟩
Communication dans un congrès hal-03656147v1

Investigation of 1.2 kV investigation of SiC MOSFETs for aeronautics applications

Dhouha Othman , Stéphane Lefebvre , Mounira Berkani , Zoubir Khatir , Ali Ibrahim
Power Electronics and Applications (EPE), 2013 15th European Conference on, Sep 2013, Lille, France. pp.1-9, ⟨10.1109/EPE.2013.6634665⟩
Communication dans un congrès hal-00881162v1

Robustness of 1.2 kV SiC MOSFET devices

Othman Dhouha , Stéphane Lefebvre , Mounira Berkani , Zoubir Khatir , Ali Ibrahim
ESREF, 2013, Arcachon, France
Communication dans un congrès hal-01700475v1