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Nicolas Rouger

5
Documents
Affiliations actuelles
  • 405657
Identifiants chercheurs
Site web
  • https://scholar.google.fr/citations?user=K1uNl9AAAAAJ

Présentation

My field of interest is power electronics, and more particularly, power semiconductor devices. Recently, I have focused my research activity on the next generation of power semiductor devices based on widebandgap (SiC, GaN) and ultrawidebandgap materials (Diamond). For SiC and GaN, I focus on integration techniques and dedicated Silicon CMOS gate drivers to improve the performances and offer new trade-offs. For diamond, I work with pionners such as CNRS/Institut Néel and Diamfab start-up company in Grenoble, to design power semiconductor devices with outstanding performances, and implement those in the next generation of power converters. As a scientist at CNRS/Laplace in Toulouse, I supervise grad. students, PhD students and postdocs, with my colleagues in the power converter research group, other academic colleagues and industrial partners. Since Jan. 2020, I have the privilege to be the head of this research group, composed of 35 persons, and work closely with other group leaders and laboratory board of directors, to continuously improve our activities. I lead and actively contribute to research projects on power electronics, funded by local, national or international funding agencies, from basic science to applications towards energy transition. Notably, I am involved in the SEMA joint lab between NXP Semiconductors and CNRS (Laplace, Laas, Institut Polytechnique Toulouse, Univ. Toulouse 3 Paul Sabatier) since its creation in 2020, to innovate on electrical mobility.

Publications

"sebastien-vinnac"
Image document

p-GaN HEMT Hard Switching Fault Type Short-Circuit Detection Based on the Gate Schottky-Barrier Leakage Current and Using a Dual-Channel Segmented CMOS buffer Gate-Driver

Yazan Barazi , Frédéric Richardeau , Sébastien Vinnac , Nicolas C. Rouger
35th IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD 2023), Hong Kong University of Science and Technology, May 2023, Hong Kong, China. ⟨10.1109/ISPSD57135.2023.10147669⟩
Communication dans un congrès hal-04114246v2
Image document

Développement de fonctionnalités rapides, précises et intégrées CMOS, pour la commutation optimale et la protection interne des onduleurs à module SiC MOSFET

Anas Elboubkari , Matthieu Masson , Nicolas C. Rouger , Marc Cousineau , Frédéric Richardeau
SYMPOSIUM DE GENIE ELECTRIQUE (SGE 2023), Jul 2023, Lille, France
Communication dans un congrès hal-04157854v1

Towards the implementation of diamond power devices in power converters and measurements of their switching losses

Nicolas C. Rouger , Damien Risaletto , Pierre Lefranc , Pierre-Olivier Jeannin , Hugo Cagnol
MRS Spring Meeting 2021, Apr 2021, Seattle, United States
Communication dans un congrès hal-03289135v1
Image document

Protection rapide et robuste contre les courts-circuits internes de convertisseurs à base de MOSFETs SiC

Yazan Barazi , François Boige , Nicolas C. Rouger , Jean-Marc Blaquière , Sébastien Vinnac
SYMPOSIUM DE GENIE ELECTRIQUE (SGE 2021), 6 - 8 JUILLET 2021, NANTES, FRANCE, Jul 2021, Nantes, France
Communication dans un congrès hal-03287704v1
Image document

Sub-nanosecond delay CMOS Active Gate Driver for Closed-Loop dv/dt Control of GaN Transistors

Bau Plinio , Marc Cousineau , Bernardo Cogo , Frédéric Richardeau , Sébastien Vinnac
31st IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), May 2019, Shanghai, China. ⟨10.1109/ispsd.2019.8757693⟩
Communication dans un congrès hal-02157332v1