Nicolas Rouger
- Convertisseurs Statiques (LAPLACE-CS)
Présentation
My field of interest is power electronics, and more particularly, power semiconductor devices. Recently, I have focused my research activity on the next generation of power semiductor devices based on widebandgap (SiC, GaN) and ultrawidebandgap materials (Diamond). For SiC and GaN, I focus on integration techniques and dedicated Silicon CMOS gate drivers to improve the performances and offer new trade-offs. For diamond, I work with pionners such as CNRS/Institut Néel and Diamfab start-up company in Grenoble, to design power semiconductor devices with outstanding performances, and implement those in the next generation of power converters. As a scientist at CNRS/Laplace in Toulouse, I supervise grad. students, PhD students and postdocs, with my colleagues in the power converter research group, other academic colleagues and industrial partners. Between Jan 2020 and Jan 2025, I have been the group leader of this research group, composed of 35 persons, and worked closely with other group leaders and laboratory board of directors, to continuously improve our activities. I lead and actively contribute to research projects on power electronics, funded by local, national or international funding agencies, from basic science to applications towards energy transition. Notably, I am involved in the SEMA joint lab between NXP Semiconductors and CNRS (Laplace, Laas, Institut Polytechnique Toulouse, Univ. Toulouse 3 Paul Sabatier) since its creation in 2020, to innovate on electrical mobility.
Publications
Publications
Scaling current rating of diamond-based MOSFETs: Interdigitated lateral deep-depletion diamond field-effect transistor30th Hasselt Diamond Workshop SBDD XXX, Mar 2026, Hasselt (Belgium), Belgium |
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Lateral diamond MOSFET simulation for a monolithic switching cell30th Hasselt Diamond Workshop SBDD XXX, Mar 2026, Hasselt (Belgium), Belgium |
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Over 300 mA in a diamond JFET: interdigitated FET structure optimization30th Hasselt Diamond Workshop SBDD XXX, Mar 2026, Hasselt (Belgium), Belgium |
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Système de gestion adaptative du temps-mort intégré au gate-driver CMOS pour MOSFET SiCSymposium de Génie Électrique SGE 2025, Jul 2025, Toulouse, France |
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Cellule de commutation GaN et son circuit driver monolithique à contrôle actif rapide de dV/dtSymposium de Génie Électrique SGE 2025, cnrs, ups, Jul 2025, Toulouse, France |
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CMOS gate driver with fully integrated fast and robust gate monitoring solution for a full short-circuit protection of sic half bridge power module36th EUROPEAN SYMPOSIUM ON RELIABILITY OF ELECTRON DEVICES, FAILURE PHYSICS AND ANALYSIS, Université de Bordeaux, ADERA, Oct 2025, Bordeaux, France |
Lateral deep depletion diamond MOSFET breakdown voltage improvement up to 950 V29th Hasselt Diamond Workshop 2025 - SBDD XXIX, Mar 2025, Hasselt, Belgium |
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Science ouverte et collaborative pour l'élaboration d'un banc automatisé de caractérisation de pertes en commutation par oppositionSymposium de Génie Électrique SGE 2025, Jul 2025, Toulouse, France |
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Vers la caractérisation en commutation de transistors diamant à effet de champ de type pSymposium de Génie Électrique SGE 2025, Jul 2025, Toulouse, France |
Source field plate addition on deep depletion diamond MOSFET to increase the breakdown up to 850 V35th International Conference on Diamond and Carbon Materials (ICDCM 2025), Aug 2025, Glasgow, United Kingdom |
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Commande de grille dynamique en tension multiniveaux pour transistor SiCSymposium de Génie Électrique SGE 2025, cnrs, ups, Jul 2025, Toulouse, France |
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Over 1kV Deep Depletion Diamond MOSFET2025 37th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Jun 2025, Kumamoto, Japan. pp.373-376, ⟨10.23919/ISPSD62843.2025.11117478⟩ |
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Transistor à effet de champ interdigité en diamant : augmentation du calibre en courantSymposium de Génie Électrique SGE 2025, Jul 2025, Toulouse, France |
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CMOS Modular Multilevel Active Gate Driver for SiC MOSFET2025 Energy Conversion Congress & Expo Europe (ECCE Europe), Sep 2025, Birmingham, United Kingdom. pp.1-6, ⟨10.1109/ECCE-Europe62795.2025.11238588⟩ |
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Towards Monolithic GaN Power ICs : A Comparative Analysis of four All-GaN Gate Drivers2025 Energy Conversion Congress & Expo Europe (ECCE Europe), Sep 2025, Birmingham, United Kingdom. pp.1-6, ⟨10.1109/ECCE-Europe62795.2025.11238917⟩ |
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Alimentation isolée ajustable numériquement pour la commande rapprochée de transistors de puissance, en science ouverteSymposium de Génie Électrique SGE 2025, cnrs, ups, Jul 2025, Toulouse, France |
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A 200V Monolithic GaN Half-Bridge with Active Gate Driver Including a Fast dv/dt Feedback Loop2nd Bi-annual IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA-Europe 2024), Sep 2024, Cardiff (GB), United Kingdom. ⟨10.1109/WiPDAEurope62087.2024.10797415⟩ |
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Système de gestion optimale du temps-mort intégré au gate-driver CMOS grâce à la mesure du courant de grille pour les MOSFETs SiCCongrès de l'école doctorale GEETS, Ecole Doctorale GEETS, Jun 2024, TOULOUSE (FRANCE), France |
2D & 3D simulation of a diamond Junction Field Effect Transistor and comparison with experiments34th International Conference on Diamond and Carbon Materials (ICDCM), Elsevier, Sep 2024, Dresden, Germany |
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Gate driver topologies, concepts and challenges for WBG devices - Invited short course speaker2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Jun 2024, Bremen, Germany. ⟨10.5281/zenodo.12941224⟩ |
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Diamond FET improvement to reach industrial reality8th French Japan workshop on Diamond electronic devices, Jun 2024, Agay, France |
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First interdigitated diamond FET toward industrial power electronics34th International Conference on Diamond and Carbon Materials (ICDCM), Elsevier, Sep 2024, Dresden, Germany |
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First interdigitated diamond FET toward industrial power electronics28th international Hasselt Diamond Workshop (SBDD XXVIII), Feb 2024, Hasselt, Belgium |
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Vertical 1kV deep depletion diamond MOSFET: optimization and compact model28th international Hasselt Diamond Workshop (SBDD XXVIII), Feb 2024, Hasselt, Belgium |
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CMOS Gate Driver with Integrated Gate Current Monitoring Method for Fault Under Load Short Circuit Detection of SiC Power Modules2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Jun 2024, Bremen, Germany. pp.454-457, ⟨10.1109/ISPSD59661.2024.10579581⟩ |
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Tunable isolated gate driver supply for automated switching loss measurement of Power Field Effect TransistorsIEEE Design Methodologies Conference 2024, Nov 2024, Grenoble, France. ⟨10.1109/DMC62632.2024.10812130⟩ |
Electro-thermal analysis of paralleled diamond devices for higher total currentHasselt Diamond Workshop 2023 - SBDD XXVII, Mar 2023, Hasselt, Belgium |
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CMOS Gate Driver with Integrated Ultra-Accurate and Fast Gate Charge Sensor for Robust and Ultra-Fast Short Circuit Detection of SiC power modules2023 IEEE 35th International Symposium on Power Semiconductor Devices and ICs (IEEE ISPSD), Hong Kong University of Science and Technology (HKUST), May 2023, Hong Kong, France. pp.68-71, ⟨10.1109/ispsd57135.2023.10147567⟩ |
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Transistors en diamant à effet de champ pour l'électronique de puissance : comparaison de grilles (JFET) et amélioration de la tenue en tension (MOSFET)Symposium de Génie Electrique (SGE 2023), Jul 2023, Lille, France |
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What brings diamond compared to wide bandgap materials in power semiconductor devices?33rd International Conference on Diamond and Carbon Materials, Elsevier, Sep 2023, Mallorca (Spain), Spain |
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Développement de fonctionnalités rapides, précises et intégrées CMOS, pour la commutation optimale et la protection interne des onduleurs à module SiC MOSFETSYMPOSIUM DE GENIE ELECTRIQUE (SGE 2023), Jul 2023, Lille, France |
Deep-depletion diamond metal–oxide–semiconductor field-effect transistor with source-field plate for power convertersHasselt Diamond Workshop 2023 - SBDD XXVII, Mar 2023, Hasselt, Belgium |
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Static and Dynamic Characterization of a 1.2 kV SiC MOSFET in Third Quadrant2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe), Sep 2023, Aalborg, Denmark. pp.1-8, ⟨10.23919/epe23ecceeurope58414.2023.10264635⟩ |
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p-GaN HEMT Hard Switching Fault Type Short-Circuit Detection Based on the Gate Schottky-Barrier Leakage Current and Using a Dual-Channel Segmented CMOS buffer Gate-Driver35th IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD 2023), Hong Kong University of Science and Technology, May 2023, Hong Kong, China. ⟨10.1109/ISPSD57135.2023.10147669⟩ |
Threshold voltage shift of deep-depletion ZrO2/O-terminated diamond MOSFET: numerical simulations and comparison with measurementsHasselt Diamond Workshop 2023 - SBDD XXVII, Mar 2023, Hasselt, Belgium |
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Diamond electro-optically controlled JFET based memoryHasselt Diamond Workshop 2023 - SBDD XXVII, Mar 2023, Hasselt, Belgium |
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CMOS gate driver for SiC power modulesCongrès annuel de l'Ecole Doctorale Génie Electrique, Electronique, Télécommunications et Santé : du Système au Nanosystème - ED 323 (GEET) - Université de Toulouse, Ecole Doctorale GEET, Jun 2023, Toulouse, France. https://adum.fr/as/ed/GEET/article.pl |
Electro-thermal simulations of a diamond MOSFET26th Hasselt Diamond Workshop - SBDD XXVI, Mar 2022, Hasselt, Belgium |
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Optimal Design of Diamond Field Effect Transistors Towards a Key Milestone for Diamond Power ElectronicsMRS Spring 2022 - Symposium EQ01 - Ultra-Wide Bandgap Materials and Devices, May 2022, Honolulu & Virtual, United States |
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Deep-Depletion diamond metal-oxide-semiconductor field-effect transistor with source-field plate for power converters32nd International Conference on Diamond and Carbon Materials, Sep 2022, Lisbonne, Portugal |
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Non-volatile photo-switch using a diamond pn junction diamond15th International Conference on New Diamond and Nano Carbons NDNC 2022, Jun 2022, Kanazawa, Japan |
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Commutation time of non-volatile photo-switch based on diamond Junction Field Effect Transistor26th Hasselt Diamond Workshop - SBDD XXVI, Mar 2022, Hasselt, Belgium |
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Commutation time of non-volatile photo-switch based on diamond Junction Field Effect Transistor15th International Conference on New Diamond and Nano Carbons NDNC 2022, Jun 2022, Kanazawa, Japan |
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How a diamond pn junction can be used to fabricate a non-volatile photo-switch?26th Hasselt Diamond Workshop - SBDD XXVI, Mar 2022, Hasselt, Belgium |
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Diamond Power Devices: Benchmarks, Optimal Design and Integration in Power ConvertersIEEE International Workshop on Integrated Power Packaging IWIPP 2022, Aug 2022, Grenoble, France |
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Design of a Source Field-Plated Deep-Depletion Diamond MOSFETsMRS Spring 2022 - Symposium EQ01 - Ultra-Wide Bandgap Materials and Devices, May 2022, Honolulu HI, United States |
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Non-volatile tuning of normally-on and off states of the deep depletion ZrO2/diamond MOSFETs32nd International Conference on Diamond and Carbon Materials, Sep 2022, Lisbonne, Portugal |
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Comparison of diamond based non-volatile photo-switch using phosphorus and nitrogen deep donors as gate dopants32nd International Conference on Diamond and Carbon Materials, Sep 2022, Lisbonne, Portugal |
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Protection rapide et robuste contre les courts-circuits internes de convertisseurs à base de MOSFETs SiCSYMPOSIUM DE GENIE ELECTRIQUE (SGE 2021), 6 - 8 JUILLET 2021, NANTES, FRANCE, Jul 2021, Nantes, France |
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Robustness study of a fast protection method based on the gate-charge dedicated for SiC MOSFETs power device32th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 2021, Oct 2021, Bordeaux, France |
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Contrôle ultra-rapide et intégré de dv/dt en boucle fermée lors de l’amorçage de transistors à semiconducteurs grand-gapSymposium de Génie Electrique 2021, Jul 2021, Nantes, France |
Diamond Inter-Digited JFET for Power Electronic Devices31st International Conference on Diamond and Carbon Materials, Sep 2021, On Line, Spain |
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Towards the implementation of diamond power devices in power converters and measurements of their switching lossesMRS Spring Meeting 2021, Apr 2021, Seattle WA, United States |
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Hybrid power module with Diamond and SiC power devices: modeling, performances and challengesMRS Spring Meeting 2021, Apr 2021, Seattle WA, United States |
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‘ig,vgs’ Monitoring for Fast and Robust SiC MOSFET Short-Circuit Protection with High integration Capability2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe), Sep 2020, Lyon (Virtual ), France. pp.P.1-P.10, ⟨10.23919/EPE20ECCEEurope43536.2020.9215619⟩ |
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Modular Multilevel SOI-CMOS Active Gate Driver Architecture for SiC MOSFETs2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Sep 2020, Vienna (virtual ), Austria. pp.278-281, ⟨10.1109/ISPSD46842.2020.9170181⟩ |
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CMOS Gate Driver with fast short circuit protection for SiC MOSFETs2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Sep 2020, Vienna (virtual), Austria. pp.94-97, ⟨10.1109/ISPSD46842.2020.9170164⟩ |
Optical control of power devices: combining photonics, CMOS integration and monolithic integration for the next generation of power converters2020 International Topical Meeting on Microwave Photonics (MWP), Nov 2020, Matsue, Japan. ⟨10.23919/MWP48676.2020⟩ |
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Modeling and Design of High Bandwidth Feedback Loop for dv/dt Control in CMOS AGD for GaN2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Sep 2020, Vienna ( virtual ), Austria. pp.106-109, ⟨10.1109/ISPSD46842.2020.9170106⟩ |
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Sub-nanosecond delay CMOS Active Gate Driver for Closed-Loop dv/dt Control of GaN Transistors31st IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), May 2019, Shanghai, China. ⟨10.1109/ispsd.2019.8757693⟩ |
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Comparison between ig Integration and vgs Derivation methods dedicated to fast Short-Circuit 2D-Diagnosis for Wide Band Gap Power DevicesELECTRIMACS 2019, May 2019, Salerno, Italy |
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175V, > 5.4 MV/cm, 50 m(omega).cm2 at 250°C Diamond MOSFET and its reverse conduction2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), May 2019, Shanghai, China. pp.151-154, ⟨10.1109/ISPSD.2019.8757645⟩ |
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Transistors Haute Tension de type MOSFET et MESFET en diamant pour l'électronique de puissanceSymposium de Génie Electrique, Université de Lorraine [UL], Jul 2018, Nancy, France |
Double chips low side - high side configurable full gate driver circuits for a high speed inverter legCIPS 2018 10th International Conference on Integrated Power Electronics Systems, 2018, Mar 2018, Stuttgart, Germany |
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A CMOS gate driver with ultra-fast dV/dt embedded control dedicated to optimum EMI and turn-on losses management for GaN power transistors2018 14th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), Jul 2018, Prague, France. pp.105-108, ⟨10.1109/PRIME.2018.8430331⟩ |
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Diamond Schottky barrier diodes for power electronics applicationsECCE 2018, Sep 2018, Portland, United States |
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Diodes Schottky en Diamant : augmentation du calibre en courant et parallélisationSymposium de Génie Electrique, Université de Lorraine [UL], Jul 2018, Nancy, France |
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Solderless Leadframe Assisted Wafer-Level Packaging Technology for Power Electronics2018 IEEE 68th Electronic Components and Technology Conference (ECTC), May 2018, San Diego, France. pp.1251-1257, ⟨10.1109/ECTC.2018.00193⟩ |
Diamond Devices for Power Electronics11th Conference on New Diamond and Nano Carbons, May 2017, Cairns, Australia |
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Diamond Schottky diodes interactions in power electronics applicationMRS 2017 Fall Meeting, Nov 2017, Boston, United States |
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200V, 4MV/cm lateral diamond MOSFET2017 IEEE International Electron Devices Meeting (IEDM), Dec 2017, San Francisco, United States. ⟨10.1109/IEDM.2017.8268458⟩ |
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Operating temperature as a trade-off parameter for designing drift region of diamond power devices28th International Conference on Diamond and Carbon Materials, Sep 2017, Göteborg, Sweden |
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Parallel and interleaved structures for diamond Schottky diodesEPE 2017 (ECCE Europe), Sep 2017, Varsovie, Poland |
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CMOS gate drivers with integrated optical interfaces for extremely fast power transistorsESARS-ITEC 2016, Nov 2016, Toulouse, France |
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La diode Schottky en diamant : le présent et le futurSymposium de Genie Electrique, Jun 2016, Grenoble, France |
Integrated temperature sensor with diamond Schottky diodes using a thermosensitive parameterICDCM2016 - International Conference on Diamond and Carbon Materials, Sep 2016, Montpellier, France |
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Simulation numérique et caractérisation de composants de puissance en diamantSymposium de Genie Electrique, Jun 2016, Grenoble, France |
Contributions to dedicated gate driver circuitry for very high switching speed high temperature power devicesPower Semiconductor Devices and ICs (ISPSD), 2016 28th International Symposium on, Jun 2016, Prague, Czech Republic |
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Contributions aux circuits de commande gate driver dédiés à la haute température et aux très fortes vitesses de commutationSymposium de Génie Electrique (SGE'16), Jun 2016, Grenoble, France |
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Trade-off for optimizing drift region of diamond power devicesE-MRS 2016, Sep 2016, Varsovie, Poland |
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High Speed Optical Gate Driver for Wide Band Gap Power TransistorsEnergy Conversion Congress & Exposition (ECCE 2016), Sep 2016, Milwaukee, United States |
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Contributions aux circuits de « gate-driver » dédiés aux transistors de puissance à forte vitesse de commutation dans un environnement haute temperatureSymposium de Genie Electrique, Jun 2016, Grenoble, France |
CMOS SOI gate driver with integrated optical supply and optical driving for fast power transistorsPower Semiconductor Devices and ICs (ISPSD), 2016 28th International Symposium on, Jun 2016, Prague, Czech Republic |
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Optical Gate Control of Power TransistorsIEICE-NPERC-J Joint Symposium on Smart Applications of Photonics to New Generation Power Electronics, Dec 2016, Tokyo, Japan |
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Optimization and design of diamond High Voltage power devicesE-MRS Spring meeting 2016 , May 2016, Lille, France |
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Optimal design of unipolar diamond power devices: drift region and channel doseHasselt Diamond Workshop 2016 - SBDD XXI, Mar 2016, Hasselt, Belgium |
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Mise en place d'un packaging 3D collectif de composants de puissance à structure verticaleSymposium de Genie Electrique, Jun 2016, Grenoble, France |
Diamond power electronics : from device simulation to implementation in power converters2016 MRS Spring Meeting and Exhibit - Diamond Power Electronic Devices symposium, Mar 2016, Phoenix, United States |
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Monolithic integration in CVD diamond: Schottky power diodes and integrated temperature sensor2016 MRS Spring Meeting and Exhibit - Diamond Power Electronic Devices symposium, Mar 2016, Phoenix, United States |
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Towards vertical power device 3D packaging on 8-inch waferPower Semiconductor Devices and ICs (ISPSD), 2016 28th International Symposium on, Jun 2016, Prague, Czech Republic |
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CMOS Gate Drivers for High Speed - High Voltage Wide Bandgap Power SwitchesCMOS Emerging Technologies Research 2015, May 2015, Vancouver, Canada |
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CMOS Gate Driver with Integrated Optical receiver for Power Electronics applicationsECCE Europe 2015, Sep 2015, Genève, Switzerland |
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Enabling high switching speed for diamond power transistors3rd French-Japanese workshop on Diamond Power Device, Jul 2015, France |
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Challenges and benefits of microelectronics for power electronics: from integrated optical driving to optimized power semiconductor switchesPh. D. Research in Microelectronics and Electronics (PRIME), 2014 10th Conference on, 2014, Grenoble, France. pp.1--1 |
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3D Packaging for vertical power devicesCIPS 2014, Feb 2014, Nuremberg, Germany |
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Modeling and characterization of 0.35 μm CMOS coreless transformer for gate driversISPSD 2014, Apr 2014, Hawai, United States |
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Challenges of diamond devices for power electronicsThe 2nd Japan - France CVD diamond power device workshop, 2014, Kyushu, Japan |
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Leakage current conduction mechanisms in atomic layer deposited HfO2, ZrO2 and Al2O3 on O-terminated diamondInternational Conference on Diamond and Carbon Materials, 2014, Seville, Spain |
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Advanced Wafer Level Packaging Technology by Layer Transfer Engineering : Application to 3D Packaging for vertical power devicesFrom nano to macro power electronics and packaging international workshop, Oct 2014, Tours, France |
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Méthodes spécifiques de caractérisation et de commande de composants grand gap en environnement variableSymposium de Génie Électrique 2014, Jul 2014, Cachan, France |
Comparison of atomic layer deposited HfO2, ZrO2 and Al2O3 on O-terminated boron doped diamondSBDD 2014, Feb 2014, Hasselt, Belgium |
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Integrated gate driver circuits with an ultra-compact design and high level of galvanic isolation for power transistorsInternational Conference on Integrated Power Electronics Systems (CIPS 2014), Feb 2014, Nuremberg, Germany. ISBN 978-3-8007-3578-5, pp 348-353 |
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Transfert isolé des signaux de commande dans le contexte de l'intégration pour les composants actifs d'électronique de puissanceSymposium de Génie Électrique 2014, Jul 2014, Cachan, France |
CMOS Integrated Optical Isolator for Power Transistor Gate DriverIECON 2014, Oct 2014, Dallas, United States |
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An Adaptive Output Impedance Gate Drive for Safer and More Efficient Control of Wide Bandgap DevicesIEEE WipDa 2013, 2013, Columbus, United States. ⟨10.1109/WiPDA.2013.6695564⟩ |
Models and parameters study for diamond electronic devices simulations74th Japan Society of Applied Physics Autumn Meeting. (JSAP-MRS joint symposia), Sep 2013, Kyoto, Japan |
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Performance Measurements of an Optical Detector Designed for Monolithic Integration with a Power VDMOSI2MTC 2013, May 2013, Minnéapolis, United States |
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True 3D Packaging Solution for Stacked Vertical Power DevicesThe 25th International Symposium on Power Semiconductor Devices and ICs. (ISPSD 2013), May 2013, Kanazawa, Japan. pp.97-100 |
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A Specific Switching Characterization Method for Evaluation of Operating Point and Temperature Impacts on Wide Bandgap DevicesIEEE WipDa 2013, Oct 2013, Columbus, United States. ⟨10.1109/WiPDA.2013.6695573⟩ |
Diamond bipolar device simulationIEEE Workshop on Wide Bandgap Power Devices and Applications, Oct 2013, Columbus, United States |
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Convertisseur intégré pour les applications réseaux de micro convertisseursElectronique de Puissance du Futur 2012, Jul 2012, France |
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Evaluation des Performances d'une Chaîne de Traction pour Véhicule Electrique pour Différentes Structures d'Electronique de PuissanceElectronique de Puissance du Futur 2012, Jul 2012, France |
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Integration of Dual Active Bridge DC/DC Converters for Converters Networks applicationsPCIM 2012, May 2012, Nuremberg, Germany |
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Integrated Low Power Low Voltage Isolated Switch Mode Power SupplyIn Industrial Electronics CONference, IEEE IECON 2012, Oct 2012, France. pp.500-505 |
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A vertical power device conductive assembly at wafer level using direct bonding technologyIn Power Semiconductor Devices and ICs (ISPSD), Jun 2012, France. pp.77-80 |
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Vers une filière et un support de conception EDA (Electronic Design Automation) des fonctions de coupure spécifiquesElectronique de Puissance du Futur 2012, Jul 2012, Bordeaux, France. 4p |
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Implementation of monolithic multiple vertical power diodes in a multiphase converterApplied Power Electronics Conference and Exposition (APEC), 2012 Twenty-Seventh Annual IEEE, Feb 2012, Orlando, United States. pp.169-175 |
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An Integration of Dual Active Bridge DC/DC Converters Used in Micro Converters NetworksPower Electronics/Intelligent Motion/Power Quality PCIM Europe Conference 2012, May 2012, Nuremberg, Germany |
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Etude expérimentale d'un étage intégré d'isolation par voie optique pour transistors de puissanceElectronique de Puissance du Futur 2012, Jul 2012, France |
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Packaging à l'échelle du wafer pour les convertisseurs multicellulairesElectronique de Puissance du Futur 2012, Jul 2012, France |
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CASCADED INVERTERS FOR ELECTRICAL VEHICLES: TOWARDS A BETTER MANAGEMENT OF TRACTION CHAIN FROM THE BATTERY TO THE MOTOR?ISIE 2011, Jun 2011, Gdansk, Poland |
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A novel Power System in Package with 3D chip on chip interconnections of the power transistor and its gate driverProceedings of 23rd International Symposium on Power Semiconductor Devices & IC's, May 2011, San Diego, United States. pp.328-331 |
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Integrated Low Power and High Bandwidth Optical Isolator for Monolithic Power MOSFETs DriverProceedings of 23rd International Symposium on Power Semiconductor Devices & IC's, May 2011, San Diego, United States. pp.356-359 |
Benefits of Cascaded Inverters for Electrical Vehicles'Drive-TrainsECCE, Sep 2011, Phoenix, United States |
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Towards reduced threshold voltages for vertical power Mosfet transistorsISIE 2011, Jun 2011, Gdansk, Poland |
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Design and characterization of a signal insulation coreless transformer integrated in a CMOS gate driver chipDesign and characterization of a signal insulation coreless transformer integrated in a CMOS gate driver chip, May 2011, San Diego, United States. pp.360-363 |
Design and characterization of an integrated coreless transformer onto a CMOS gate driver for gate signal insulation purposesIEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), May 2011, San Diego, United States |
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Current Trends in Silicon Photonics in the Context of Higher EducationCMOS Emerging Technologies Workshop 2010, 2010, Canada |
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optimization of a power MOSFET And Its Monolithically integrated self-powering CircuitsXI-th International Workshop on Optimization and Inverse Problems in Electromagnetism, Sep 2010, Sofia, Bulgaria. pp.ISBN 978-954-438-855-3 |
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Silicon Nanophotonics Fabrication: an Innovative Graduate CourseThe 17th International Conference on Telecommunications, Apr 2010, Doha, Qatar |
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Flexible Parameter Identification Tool for semiconductor Device DesignXI-th International Workshop on Optimization and Inverse Problems in Electromagnetism, Sep 2010, Sofia, Bulgaria. pp.ISBN 978-954-438-855-3 |
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Tension de seuil réduite pour composants de puissance à grille: Intérêts et conséquences.Électronique de Puissance du Futur, Jun 2010, Saint-Nazaire, France. 4p |
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3D hybrid integration and functional interconnection of a power transistor and its gate driverECCE (Energy Conversion Conference and Exposition) IEEE, Sep 2010, Atlanta, United States |
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Conception, intégration 3D et caractérisation d'un circuit de commande CMOS pour transistors de puissanceÉlectronique de Puissance du Futur, Jun 2010, Saint-Nazaire, France |
Design of a 1550nm SiGe/Si quantum-well optical modulatorProceedings of SPIE Photonics North, 2010, United States |
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Design and characterization of an integrated CMOS gate driver for vertical power MOSFETsECCE (Energy Conversion Conference and Exposition) IEEE, Sep 2010, Atlanta, United States |
Toward Integrated Gate Driver Supplies : Practical and Analytical Analysis of High-Voltage CapabilitiesPower Electronics Specialists Conference PESC 08, Jun 2008, Rhodes, Greece. IEEE pesc conference, pp 873-879 |
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Integrated Photoreceiver For An Isolated Control Signal Transfert In Favour Of Power TransistorsIEEE 20th International Symposium on Power Semiconductor Devices and ICs (ISPSD'08), May 2008, Orlando, United States. pp. 213-216 |
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Intégration Monolithique d'un Récepteur Optique au sein de Transistors de Puissance : Enjeux et PossibilitésEPF 2008 XIIème colloque Electronique de Puissance du Futur, Jul 2008, Tours, France. pp.141-146 |
Simulation, Design and Testing of Integrated Power Supply For Insulated Gate TransistorsIEEE ISPSD'06, Jun 2006, Naples, Italy |
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High Efficiency and Fully Integrated Self Powering Technique For VIPer Based Flyback ConvertersIAS-IEEE Conference, Oct 2006, Tampa, Floride, United States |
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Toward generic fully integrated gate driver power suppliesIEEE IECON 2006, Nov 2006, Paris, France |
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Nouvelles fonctions de commutation de puissance intégrées sur SiliciumJournées GdR, Oct 2005, Lyon, France |
Optical Gate Control of Power TransistorsIEICE-NPERC-J Joint Symposium on Smart Applications of Photonics to New Generation Power Electronics , Dec 2016, Tokyo, Japan |
Diamond devices in power converters: needs, constraints, and impactWoodhead Publishing. Power Electronics Device Applications of Diamond Semiconductors, chap 6.2, pp.400-431, 2018, 978-0-08-102183-5 |
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Commande des composants à semi-conducteurs de puissance : contexteTechniques de l'Ingénieur , d3230v2, 2017 |
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