
Nicolas Rouger
- Convertisseurs Statiques (LAPLACE-CS)
Présentation
My field of interest is power electronics, and more particularly, power semiconductor devices. Recently, I have focused my research activity on the next generation of power semiductor devices based on widebandgap (SiC, GaN) and ultrawidebandgap materials (Diamond). For SiC and GaN, I focus on integration techniques and dedicated Silicon CMOS gate drivers to improve the performances and offer new trade-offs. For diamond, I work with pionners such as CNRS/Institut Néel and Diamfab start-up company in Grenoble, to design power semiconductor devices with outstanding performances, and implement those in the next generation of power converters.
As a scientist at CNRS/Laplace in Toulouse, I supervise grad. students, PhD students and postdocs, with my colleagues in the power converter research group, other academic colleagues and industrial partners. Between Jan 2020 and Jan 2025, I have been the group leader of this research group, composed of 35 persons, and worked closely with other group leaders and laboratory board of directors, to continuously improve our activities.
I lead and actively contribute to research projects on power electronics, funded by local, national or international funding agencies, from basic science to applications towards energy transition. Notably, I am involved in the SEMA joint lab between NXP Semiconductors and CNRS (Laplace, Laas, Institut Polytechnique Toulouse, Univ. Toulouse 3 Paul Sabatier) since its creation in 2020, to innovate on electrical mobility.
Publications
Publications
Lateral deep depletion diamond MOSFET breakdown voltage improvement up to 950 V29th Hasselt Diamond Workshop 2025 - SBDD XXIX, Mar 2025, Hasselt, Belgium
Communication dans un congrès
hal-05057593
v1
|
|
Diamond FET improvement to reach industrial reality8th French Japan workshop on Diamond electronic devices, Jun 2024, Agay, France
Communication dans un congrès
hal-04625261
v1
|
|
|
Système de gestion optimale du temps-mort intégré au gate-driver CMOS grâce à la mesure du courant de grille pour les MOSFETs SiCCongrès de l'école doctorale GEETS, Ecole Doctorale GEETS, Jun 2024, TOULOUSE (FRANCE), France
Communication dans un congrès
hal-04606906
v2
|
2D & 3D simulation of a diamond Junction Field Effect Transistor and comparison with experiments34th International Conference on Diamond and Carbon Materials (ICDCM), Elsevier, Sep 2024, Dresden, Germany
Communication dans un congrès
hal-04699011
v1
|
|
Gate driver topologies, concepts and challenges for WBG devices - Invited short course speaker2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Jun 2024, Bremen, Germany. ⟨10.5281/zenodo.12941224⟩
Communication dans un congrès
hal-04661363
v1
|
|
First interdigitated diamond FET toward industrial power electronics28th international Hasselt Diamond Workshop (SBDD XXVIII), Feb 2024, Hasselt, Belgium
Communication dans un congrès
hal-04506082
v1
|
|
Vertical 1kV deep depletion diamond MOSFET: optimization and compact model28th international Hasselt Diamond Workshop (SBDD XXVIII), Feb 2024, Hasselt, Belgium
Communication dans un congrès
hal-04506071
v1
|
|
First interdigitated diamond FET toward industrial power electronics34th International Conference on Diamond and Carbon Materials (ICDCM), Elsevier, Sep 2024, Dresden, Germany
Communication dans un congrès
hal-04699018
v1
|
|
|
CMOS Gate Driver with Integrated Gate Current Monitoring Method for Fault Under Load Short Circuit Detection of SiC Power Modules2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Jun 2024, Bremen, Germany. pp.454-457, ⟨10.1109/ISPSD59661.2024.10579581⟩
Communication dans un congrès
hal-04647315
v1
|
|
Tunable isolated gate driver supply for automated switching loss measurement of Power Field Effect TransistorsIEEE Design Methodologies Conference 2024, Nov 2024, Grenoble, France. ⟨10.1109/DMC62632.2024.10812130⟩
Communication dans un congrès
hal-04844860
v1
|
|
A 200V Monolithic GaN Half-Bridge with Active Gate Driver Including a Fast dv/dt Feedback Loop2nd Bi-annual IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA-Europe 2024), Sep 2024, Cardiff (GB), United Kingdom. ⟨10.1109/WiPDAEurope62087.2024.10797415⟩
Communication dans un congrès
hal-04844869
v1
|
|
What brings diamond compared to wide bandgap materials in power semiconductor devices?33rd International Conference on Diamond and Carbon Materials, Elsevier, Sep 2023, Mallorca (Spain), Spain
Communication dans un congrès
hal-04221279
v1
|
|
CMOS Gate Driver with Integrated Ultra-Accurate and Fast Gate Charge Sensor for Robust and Ultra-Fast Short Circuit Detection of SiC power modules2023 IEEE 35th International Symposium on Power Semiconductor Devices and ICs (IEEE ISPSD), Hong Kong University of Science and Technology (HKUST), May 2023, Hong Kong, France. pp.68-71, ⟨10.1109/ispsd57135.2023.10147567⟩
Communication dans un congrès
hal-04132615
v1
|
Electro-thermal analysis of paralleled diamond devices for higher total currentHasselt Diamond Workshop 2023 - SBDD XXVII, Mar 2023, Hasselt, Belgium
Communication dans un congrès
hal-04099964
v1
|
|
|
Transistors en diamant à effet de champ pour l'électronique de puissance : comparaison de grilles (JFET) et amélioration de la tenue en tension (MOSFET)Symposium de Génie Electrique (SGE 2023), Jul 2023, Lille, France
Communication dans un congrès
hal-04169088
v1
|
|
Développement de fonctionnalités rapides, précises et intégrées CMOS, pour la commutation optimale et la protection interne des onduleurs à module SiC MOSFETSYMPOSIUM DE GENIE ELECTRIQUE (SGE 2023), Jul 2023, Lille, France
Communication dans un congrès
hal-04157854
v1
|
Deep-depletion diamond metal–oxide–semiconductor field-effect transistor with source-field plate for power convertersHasselt Diamond Workshop 2023 - SBDD XXVII, Mar 2023, Hasselt, Belgium
Communication dans un congrès
hal-04099969
v1
|
|
Threshold voltage shift of deep-depletion ZrO2/O-terminated diamond MOSFET: numerical simulations and comparison with measurementsHasselt Diamond Workshop 2023 - SBDD XXVII, Mar 2023, Hasselt, Belgium
Communication dans un congrès
hal-04099953
v1
|
|
|
Static and Dynamic Characterization of a 1.2 kV SiC MOSFET in Third Quadrant2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe), Sep 2023, Aalborg, Denmark. pp.1-8, ⟨10.23919/epe23ecceeurope58414.2023.10264635⟩
Communication dans un congrès
hal-04254245
v1
|
|
p-GaN HEMT Hard Switching Fault Type Short-Circuit Detection Based on the Gate Schottky-Barrier Leakage Current and Using a Dual-Channel Segmented CMOS buffer Gate-Driver35th IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD 2023), Hong Kong University of Science and Technology, May 2023, Hong Kong, China. ⟨10.1109/ISPSD57135.2023.10147669⟩
Communication dans un congrès
hal-04114246
v2
|
Diamond electro-optically controlled JFET based memoryHasselt Diamond Workshop 2023 - SBDD XXVII, Mar 2023, Hasselt, Belgium
Communication dans un congrès
hal-04099978
v1
|
|
|
CMOS gate driver for SiC power modulesCongrès annuel de l'Ecole Doctorale Génie Electrique, Electronique, Télécommunications et Santé : du Système au Nanosystème - ED 323 (GEET) - Université de Toulouse, Ecole Doctorale GEET, Jun 2023, Toulouse, France. https://adum.fr/as/ed/GEET/article.pl
Communication dans un congrès
hal-04132694
v1
|
Commutation time of non-volatile photo-switch based on diamond Junction Field Effect Transistor26th Hasselt Diamond Workshop - SBDD XXVI, Mar 2022, Hasselt, Belgium
Communication dans un congrès
hal-03738021
v1
|
|
Deep-Depletion diamond metal-oxide-semiconductor field-effect transistor with source-field plate for power converters32nd International Conference on Diamond and Carbon Materials, Sep 2022, Lisbonne, Portugal
Communication dans un congrès
hal-03867163
v1
|
|
Optimal Design of Diamond Field Effect Transistors Towards a Key Milestone for Diamond Power ElectronicsMRS Spring 2022 - Symposium EQ01 - Ultra-Wide Bandgap Materials and Devices, May 2022, Honolulu & Virtual, United States
Communication dans un congrès
hal-03692793
v1
|
|
Non-volatile photo-switch using a diamond pn junction diamond15th International Conference on New Diamond and Nano Carbons NDNC 2022, Jun 2022, Kanazawa, Japan
Communication dans un congrès
hal-03738034
v1
|
|
Diamond Power Devices: Benchmarks, Optimal Design and Integration in Power ConvertersIEEE International Workshop on Integrated Power Packaging IWIPP 2022, Aug 2022, Grenoble, France
Communication dans un congrès
hal-03768884
v1
|
|
How a diamond pn junction can be used to fabricate a non-volatile photo-switch?26th Hasselt Diamond Workshop - SBDD XXVI, Mar 2022, Hasselt, Belgium
Communication dans un congrès
hal-03738014
v1
|
|
Commutation time of non-volatile photo-switch based on diamond Junction Field Effect Transistor15th International Conference on New Diamond and Nano Carbons NDNC 2022, Jun 2022, Kanazawa, Japan
Communication dans un congrès
hal-03738050
v1
|
|
Non-volatile tuning of normally-on and off states of the deep depletion ZrO2/diamond MOSFETs32nd International Conference on Diamond and Carbon Materials, Sep 2022, Lisbonne, Portugal
Communication dans un congrès
hal-03867172
v1
|
|
Design of a Source Field-Plated Deep-Depletion Diamond MOSFETsMRS Spring 2022 - Symposium EQ01 - Ultra-Wide Bandgap Materials and Devices, May 2022, Honolulu HI, United States
Communication dans un congrès
hal-03692802
v1
|
|
Comparison of diamond based non-volatile photo-switch using phosphorus and nitrogen deep donors as gate dopants32nd International Conference on Diamond and Carbon Materials, Sep 2022, Lisbonne, Portugal
Communication dans un congrès
hal-03867185
v1
|
|
Electro-thermal simulations of a diamond MOSFET26th Hasselt Diamond Workshop - SBDD XXVI, Mar 2022, Hasselt, Belgium
Communication dans un congrès
hal-03647967
v1
|
|
|
Robustness study of a fast protection method based on the gate-charge dedicated for SiC MOSFETs power device32th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 2021, Oct 2021, Bordeaux, France
Communication dans un congrès
hal-03371958
v1
|
|
Protection rapide et robuste contre les courts-circuits internes de convertisseurs à base de MOSFETs SiCSYMPOSIUM DE GENIE ELECTRIQUE (SGE 2021), 6 - 8 JUILLET 2021, NANTES, FRANCE, Jul 2021, Nantes, France
Communication dans un congrès
hal-03287704
v1
|
|
Contrôle ultra-rapide et intégré de dv/dt en boucle fermée lors de l’amorçage de transistors à semiconducteurs grand-gapSymposium de Génie Electrique 2021, Jul 2021, Nantes, France
Communication dans un congrès
hal-02966771
v1
|
Hybrid power module with Diamond and SiC power devices: modeling, performances and challengesMRS Spring Meeting 2021, Apr 2021, Seattle WA, United States
Communication dans un congrès
hal-03289137
v1
|
|
Towards the implementation of diamond power devices in power converters and measurements of their switching lossesMRS Spring Meeting 2021, Apr 2021, Seattle WA, United States
Communication dans un congrès
hal-03289135
v1
|
|
Diamond Inter-Digited JFET for Power Electronic Devices31st International Conference on Diamond and Carbon Materials, Sep 2021, On Line, Spain
Communication dans un congrès
hal-03375284
v1
|
|
|
CMOS Gate Driver with fast short circuit protection for SiC MOSFETs2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Sep 2020, Vienna (virtual), Austria. pp.94-97, ⟨10.1109/ISPSD46842.2020.9170164⟩
Communication dans un congrès
hal-02920189
v1
|
|
Modular Multilevel SOI-CMOS Active Gate Driver Architecture for SiC MOSFETs2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Sep 2020, Vienna (virtual ), Austria. pp.278-281, ⟨10.1109/ISPSD46842.2020.9170181⟩
Communication dans un congrès
hal-02920129
v1
|
|
‘ig,vgs’ Monitoring for Fast and Robust SiC MOSFET Short-Circuit Protection with High integration Capability2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe), Sep 2020, Lyon (Virtual ), France. pp.P.1-P.10, ⟨10.23919/EPE20ECCEEurope43536.2020.9215619⟩
Communication dans un congrès
hal-02980827
v1
|
Optical control of power devices: combining photonics, CMOS integration and monolithic integration for the next generation of power converters2020 International Topical Meeting on Microwave Photonics (MWP), Nov 2020, Matsue, Japan. ⟨10.23919/MWP48676.2020⟩
Communication dans un congrès
hal-03288672
v1
|
|
|
Modeling and Design of High Bandwidth Feedback Loop for dv/dt Control in CMOS AGD for GaN2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Sep 2020, Vienna ( virtual ), Austria. pp.106-109, ⟨10.1109/ISPSD46842.2020.9170106⟩
Communication dans un congrès
hal-02920181
v1
|
|
Sub-nanosecond delay CMOS Active Gate Driver for Closed-Loop dv/dt Control of GaN Transistors31st IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), May 2019, Shanghai, China. ⟨10.1109/ispsd.2019.8757693⟩
Communication dans un congrès
hal-02157332
v1
|
|
Comparison between ig Integration and vgs Derivation methods dedicated to fast Short-Circuit 2D-Diagnosis for Wide Band Gap Power DevicesELECTRIMACS 2019, May 2019, Salerno, Italy
Communication dans un congrès
hal-02180892
v1
|
|
175V, > 5.4 MV/cm, 50 m(omega).cm2 at 250°C Diamond MOSFET and its reverse conduction2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), May 2019, Shanghai, China. pp.151-154, ⟨10.1109/ISPSD.2019.8757645⟩
Communication dans un congrès
hal-02377367
v1
|
A CMOS gate driver with ultra-fast dV/dt embedded control dedicated to optimum EMI and turn-on losses management for GaN power transistors2018 14th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), Jul 2018, Prague, France. pp.105-108, ⟨10.1109/PRIME.2018.8430331⟩
Communication dans un congrès
hal-02335492
v1
|
|
Diamond Schottky barrier diodes for power electronics applicationsECCE 2018, Sep 2018, Portland, United States
Communication dans un congrès
hal-01885530
v1
|
|
Double chips low side - high side configurable full gate driver circuits for a high speed inverter legCIPS 2018 10th International Conference on Integrated Power Electronics Systems, 2018, Mar 2018, Stuttgart, Germany
Communication dans un congrès
hal-01743621
v1
|
|
|
Diodes Schottky en Diamant : augmentation du calibre en courant et parallélisationSymposium de Génie Electrique, Université de Lorraine [UL], Jul 2018, Nancy, France
Communication dans un congrès
hal-02981846
v1
|
|
Solderless Leadframe Assisted Wafer-Level Packaging Technology for Power Electronics2018 IEEE 68th Electronic Components and Technology Conference (ECTC), May 2018, San Diego, France. pp.1251-1257, ⟨10.1109/ECTC.2018.00193⟩
Communication dans un congrès
cea-02185324
v1
|
|
Transistors Haute Tension de type MOSFET et MESFET en diamant pour l'électronique de puissanceSymposium de Génie Electrique, Université de Lorraine [UL], Jul 2018, Nancy, France
Communication dans un congrès
hal-02981917
v1
|
Diamond Devices for Power Electronics11th Conference on New Diamond and Nano Carbons, May 2017, Cairns, Australia
Communication dans un congrès
hal-01590457
v1
|
|
200V, 4MV/cm lateral diamond MOSFET2017 IEEE International Electron Devices Meeting (IEDM), Dec 2017, San Francisco, United States. ⟨10.1109/IEDM.2017.8268458⟩
Communication dans un congrès
hal-01701734
v1
|
|
Operating temperature as a trade-off parameter for designing drift region of diamond power devices28th International Conference on Diamond and Carbon Materials, Sep 2017, Göteborg, Sweden
Communication dans un congrès
hal-01590470
v1
|
|
Diamond Schottky diodes interactions in power electronics applicationMRS 2017 Fall Meeting, Nov 2017, Boston, United States
Communication dans un congrès
hal-01655900
v1
|
|
Parallel and interleaved structures for diamond Schottky diodesEPE 2017 (ECCE Europe), Sep 2017, Varsovie, Poland
Communication dans un congrès
hal-01590604
v1
|
|
Contributions aux circuits de commande gate driver dédiés à la haute température et aux très fortes vitesses de commutationSymposium de Génie Electrique (SGE'16), Jun 2016, Grenoble, France
Communication dans un congrès
hal-01333015
v1
|
|
Contributions to dedicated gate driver circuitry for very high switching speed high temperature power devicesPower Semiconductor Devices and ICs (ISPSD), 2016 28th International Symposium on, Jun 2016, Prague, Czech Republic
Communication dans un congrès
hal-01362327
v1
|
|
Trade-off for optimizing drift region of diamond power devicesE-MRS 2016, Sep 2016, Varsovie, Poland
Communication dans un congrès
hal-01370942
v1
|
|
Integrated temperature sensor with diamond Schottky diodes using a thermosensitive parameterICDCM2016 - International Conference on Diamond and Carbon Materials, Sep 2016, Montpellier, France
Communication dans un congrès
hal-01366471
v1
|
|
|
Simulation numérique et caractérisation de composants de puissance en diamantSymposium de Genie Electrique, Jun 2016, Grenoble, France
Communication dans un congrès
hal-01361596
v1
|
|
Contributions aux circuits de « gate-driver » dédiés aux transistors de puissance à forte vitesse de commutation dans un environnement haute temperatureSymposium de Genie Electrique, Jun 2016, Grenoble, France
Communication dans un congrès
hal-01361602
v1
|
High Speed Optical Gate Driver for Wide Band Gap Power TransistorsEnergy Conversion Congress & Exposition (ECCE 2016), Sep 2016, Milwaukee, United States
Communication dans un congrès
hal-01375801
v1
|
|
CMOS SOI gate driver with integrated optical supply and optical driving for fast power transistors Power Semiconductor Devices and ICs (ISPSD), 2016 28th International Symposium on, Jun 2016, Prague, Czech Republic
Communication dans un congrès
hal-01362313
v1
|
|
Optical Gate Control of Power TransistorsIEICE-NPERC-J Joint Symposium on Smart Applications of Photonics to New Generation Power Electronics, Dec 2016, Tokyo, Japan
Communication dans un congrès
hal-01420808
v1
|
|
Optimization and design of diamond High Voltage power devicesE-MRS Spring meeting 2016 , May 2016, Lille, France
Communication dans un congrès
hal-01313983
v1
|
|
Optimal design of unipolar diamond power devices: drift region and channel doseHasselt Diamond Workshop 2016 - SBDD XXI, Mar 2016, Hasselt, Belgium
Communication dans un congrès
hal-01288495
v1
|
|
|
Mise en place d'un packaging 3D collectif de composants de puissance à structure verticaleSymposium de Genie Electrique, Jun 2016, Grenoble, France
Communication dans un congrès
hal-01361603
v1
|
Diamond power electronics : from device simulation to implementation in power converters2016 MRS Spring Meeting and Exhibit - Diamond Power Electronic Devices symposium, Mar 2016, Phoenix, United States
Communication dans un congrès
hal-01306761
v1
|
|
Towards vertical power device 3D packaging on 8-inch wafer Power Semiconductor Devices and ICs (ISPSD), 2016 28th International Symposium on, Jun 2016, Prague, Czech Republic
Communication dans un congrès
hal-01362296
v1
|
|
Monolithic integration in CVD diamond: Schottky power diodes and integrated temperature sensor2016 MRS Spring Meeting and Exhibit - Diamond Power Electronic Devices symposium, Mar 2016, Phoenix, United States
Communication dans un congrès
hal-01306775
v1
|
|
|
La diode Schottky en diamant : le présent et le futurSymposium de Genie Electrique, Jun 2016, Grenoble, France
Communication dans un congrès
hal-01361578
v1
|
CMOS gate drivers with integrated optical interfaces for extremely fast power transistors ESARS-ITEC 2016, Nov 2016, Toulouse, France
Communication dans un congrès
hal-01413331
v1
|
|
CMOS Gate Drivers for High Speed - High Voltage Wide Bandgap Power SwitchesCMOS Emerging Technologies Research 2015, May 2015, Vancouver, Canada
Communication dans un congrès
hal-01159160
v1
|
|
Enabling high switching speed for diamond power transistors3rd French-Japanese workshop on Diamond Power Device, Jul 2015, France
Communication dans un congrès
hal-01176598
v1
|
|
CMOS Gate Driver with Integrated Optical receiver for Power Electronics applicationsECCE Europe 2015, Sep 2015, Genève, Switzerland
Communication dans un congrès
hal-01208262
v1
|
|
Integrated gate driver circuits with an ultra-compact design and high level of galvanic isolation for power transistorsInternational Conference on Integrated Power Electronics Systems (CIPS 2014), Feb 2014, Nuremberg, Germany. ISBN 978-3-8007-3578-5, pp 348-353
Communication dans un congrès
hal-00957347
v1
|
|
Comparison of atomic layer deposited HfO2, ZrO2 and Al2O3 on O-terminated boron doped diamondSBDD 2014, Feb 2014, Hasselt, Belgium
Communication dans un congrès
hal-00989688
v1
|
|
Leakage current conduction mechanisms in atomic layer deposited HfO2, ZrO2 and Al2O3 on O-terminated diamondInternational Conference on Diamond and Carbon Materials, 2014, Seville, Spain
Communication dans un congrès
hal-02329087
v1
|
|
Challenges of diamond devices for power electronicsThe 2nd Japan - France CVD diamond power device workshop, 2014, Kyushu, Japan
Communication dans un congrès
hal-02338451
v1
|
|
Advanced Wafer Level Packaging Technology by Layer Transfer Engineering : Application to 3D Packaging for vertical power devicesFrom nano to macro power electronics and packaging international workshop, Oct 2014, Tours, France
Communication dans un congrès
hal-01092423
v1
|
|
Modeling and characterization of 0.35 μm CMOS coreless transformer for gate driversISPSD 2014, Apr 2014, Hawai, United States
Communication dans un congrès
hal-00989648
v1
|
|
|
Méthodes spécifiques de caractérisation et de commande de composants grand gap en environnement variableSymposium de Génie Électrique 2014, Jul 2014, Cachan, France
Communication dans un congrès
hal-01065402
v1
|
|
Transfert isolé des signaux de commande dans le contexte de l'intégration pour les composants actifs d'électronique de puissanceSymposium de Génie Électrique 2014, Jul 2014, Cachan, France
Communication dans un congrès
hal-01065361
v1
|
CMOS Integrated Optical Isolator for Power Transistor Gate DriverIECON 2014, Oct 2014, Dallas, United States
Communication dans un congrès
hal-01084058
v1
|
|
Challenges and benefits of microelectronics for power electronics: from integrated optical driving to optimized power semiconductor switchesPh. D. Research in Microelectronics and Electronics (PRIME), 2014 10th Conference on, 2014, Grenoble, France. pp.1--1
Communication dans un congrès
hal-02338452
v1
|
|
3D Packaging for vertical power devicesCIPS 2014, Feb 2014, Nuremberg, Germany
Communication dans un congrès
hal-00989640
v1
|
|
Diamond bipolar device simulationIEEE Workshop on Wide Bandgap Power Devices and Applications, Oct 2013, Columbus, United States
Communication dans un congrès
hal-00911320
v1
|
|
Models and parameters study for diamond electronic devices simulations74th Japan Society of Applied Physics Autumn Meeting. (JSAP-MRS joint symposia), Sep 2013, Kyoto, Japan
Communication dans un congrès
hal-00989536
v1
|
|
Performance Measurements of an Optical Detector Designed for Monolithic Integration with a Power VDMOSI2MTC 2013, May 2013, Minnéapolis, United States
Communication dans un congrès
hal-00828612
v1
|
|
True 3D Packaging Solution for Stacked Vertical Power DevicesThe 25th International Symposium on Power Semiconductor Devices and ICs. (ISPSD 2013), May 2013, Kanazawa, Japan. pp.97-100
Communication dans un congrès
hal-00843807
v1
|
|
|
A Specific Switching Characterization Method for Evaluation of Operating Point and Temperature Impacts on Wide Bandgap DevicesIEEE WipDa 2013, Oct 2013, Columbus, United States. ⟨10.1109/WiPDA.2013.6695573⟩
Communication dans un congrès
hal-00988288
v1
|
|
An Adaptive Output Impedance Gate Drive for Safer and More Efficient Control of Wide Bandgap DevicesIEEE WipDa 2013, 2013, Columbus, United States. ⟨10.1109/WiPDA.2013.6695564⟩
Communication dans un congrès
hal-00988293
v1
|
Integration of Dual Active Bridge DC/DC Converters for Converters Networks applicationsPCIM 2012, May 2012, Nuremberg, Germany
Communication dans un congrès
hal-00696167
v1
|
|
Evaluation des Performances d'une Chaîne de Traction pour Véhicule Electrique pour Différentes Structures d'Electronique de PuissanceElectronique de Puissance du Futur 2012, Jul 2012, France
Communication dans un congrès
hal-00716734
v1
|
|
A vertical power device conductive assembly at wafer level using direct bonding technologyIn Power Semiconductor Devices and ICs (ISPSD), Jun 2012, France. pp.77-80
Communication dans un congrès
hal-00820244
v1
|
|
Integrated Low Power Low Voltage Isolated Switch Mode Power SupplyIn Industrial Electronics CONference, IEEE IECON 2012, Oct 2012, France. pp.500-505
Communication dans un congrès
hal-00820246
v1
|
|
Vers une filière et un support de conception EDA (Electronic Design Automation) des fonctions de coupure spécifiquesElectronique de Puissance du Futur 2012, Jul 2012, Bordeaux, France. 4p
Communication dans un congrès
hal-00716857
v1
|
|
Implementation of monolithic multiple vertical power diodes in a multiphase converterApplied Power Electronics Conference and Exposition (APEC), 2012 Twenty-Seventh Annual IEEE, Feb 2012, Orlando, United States. pp.169-175
Communication dans un congrès
hal-00706742
v1
|
|
An Integration of Dual Active Bridge DC/DC Converters Used in Micro Converters NetworksPower Electronics/Intelligent Motion/Power Quality PCIM Europe Conference 2012, May 2012, Nuremberg, Germany
Communication dans un congrès
hal-00706753
v1
|
|
Etude expérimentale d'un étage intégré d'isolation par voie optique pour transistors de puissanceElectronique de Puissance du Futur 2012, Jul 2012, France
Communication dans un congrès
hal-00716725
v1
|
|
Packaging à l'échelle du wafer pour les convertisseurs multicellulairesElectronique de Puissance du Futur 2012, Jul 2012, France
Communication dans un congrès
hal-00716747
v1
|
|
Convertisseur intégré pour les applications réseaux de micro convertisseursElectronique de Puissance du Futur 2012, Jul 2012, France
Communication dans un congrès
hal-00716729
v1
|
|
|
Integrated Low Power and High Bandwidth Optical Isolator for Monolithic Power MOSFETs DriverProceedings of 23rd International Symposium on Power Semiconductor Devices & IC's, May 2011, San Diego, United States. pp.356-359
Communication dans un congrès
hal-00599257
v1
|
A novel Power System in Package with 3D chip on chip interconnections of the power transistor and its gate driverProceedings of 23rd International Symposium on Power Semiconductor Devices & IC's, May 2011, San Diego, United States. pp.328-331
Communication dans un congrès
hal-00599317
v1
|
|
CASCADED INVERTERS FOR ELECTRICAL VEHICLES: TOWARDS A BETTER MANAGEMENT OF TRACTION CHAIN FROM THE BATTERY TO THE MOTOR?ISIE 2011, Jun 2011, Gdansk, Poland
Communication dans un congrès
hal-00606381
v1
|
|
Benefits of Cascaded Inverters for Electrical Vehicles'Drive-TrainsECCE, Sep 2011, Phoenix, United States
Communication dans un congrès
hal-00728008
v1
|
|
Towards reduced threshold voltages for vertical power Mosfet transistorsISIE 2011, Jun 2011, Gdansk, Poland
Communication dans un congrès
hal-00607324
v1
|
|
Design and characterization of an integrated coreless transformer onto a CMOS gate driver for gate signal insulation purposesIEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), May 2011, San Diego, United States
Communication dans un congrès
hal-01068882
v1
|
|
|
Design and characterization of a signal insulation coreless transformer integrated in a CMOS gate driver chipDesign and characterization of a signal insulation coreless transformer integrated in a CMOS gate driver chip, May 2011, San Diego, United States. pp.360-363
Communication dans un congrès
hal-00599260
v1
|
|
Conception, intégration 3D et caractérisation d'un circuit de commande CMOS pour transistors de puissanceÉlectronique de Puissance du Futur, Jun 2010, Saint-Nazaire, France
Communication dans un congrès
hal-00498844
v1
|
|
Silicon Nanophotonics Fabrication: an Innovative Graduate CourseThe 17th International Conference on Telecommunications, Apr 2010, Doha, Qatar
Communication dans un congrès
hal-00476550
v1
|
|
Tension de seuil réduite pour composants de puissance à grille: Intérêts et conséquences.Électronique de Puissance du Futur, Jun 2010, Saint-Nazaire, France. 4p
Communication dans un congrès
hal-00498857
v1
|
|
Flexible Parameter Identification Tool for semiconductor Device DesignXI-th International Workshop on Optimization and Inverse Problems in Electromagnetism, Sep 2010, Sofia, Bulgaria. pp.ISBN 978-954-438-855-3
Communication dans un congrès
hal-00520042
v1
|
|
optimization of a power MOSFET And Its Monolithically integrated self-powering CircuitsXI-th International Workshop on Optimization and Inverse Problems in Electromagnetism, Sep 2010, Sofia, Bulgaria. pp.ISBN 978-954-438-855-3
Communication dans un congrès
hal-00520051
v1
|
Current Trends in Silicon Photonics in the Context of Higher EducationCMOS Emerging Technologies Workshop 2010, 2010, Canada
Communication dans un congrès
hal-00608293
v1
|
|
|
3D hybrid integration and functional interconnection of a power transistor and its gate driverECCE (Energy Conversion Conference and Exposition) IEEE, Sep 2010, Atlanta, United States
Communication dans un congrès
hal-00520083
v1
|
Design of a 1550nm SiGe/Si quantum-well optical modulatorProceedings of SPIE Photonics North, 2010, United States
Communication dans un congrès
hal-00545393
v1
|
|
|
Design and characterization of an integrated CMOS gate driver for vertical power MOSFETsECCE (Energy Conversion Conference and Exposition) IEEE, Sep 2010, Atlanta, United States
Communication dans un congrès
hal-00520085
v1
|
Integrated Photoreceiver For An Isolated Control Signal Transfert In Favour Of Power TransistorsIEEE 20th International Symposium on Power Semiconductor Devices and ICs (ISPSD'08), May 2008, Orlando, United States. pp. 213-216
Communication dans un congrès
hal-00282182
v1
|
|
Toward Integrated Gate Driver Supplies : Practical and Analytical Analysis of High-Voltage CapabilitiesPower Electronics Specialists Conference PESC 08, Jun 2008, Rhodes, Greece. IEEE pesc conference, pp 873-879
Communication dans un congrès
hal-00292642
v1
|
|
|
Intégration Monolithique d'un Récepteur Optique au sein de Transistors de Puissance : Enjeux et PossibilitésEPF 2008 XIIème colloque Electronique de Puissance du Futur, Jul 2008, Tours, France. pp.141-146
Communication dans un congrès
hal-00296716
v1
|
Toward generic fully integrated gate driver power suppliesIEEE IECON 2006, Nov 2006, Paris, France
Communication dans un congrès
hal-00199403
v1
|
|
High Efficiency and Fully Integrated Self Powering Technique For VIPer Based Flyback ConvertersIAS-IEEE Conference, Oct 2006, Tampa, Floride, United States
Communication dans un congrès
hal-00198345
v1
|
|
Simulation, Design and Testing of Integrated Power Supply For Insulated Gate TransistorsIEEE ISPSD'06, Jun 2006, Naples, Italy
Communication dans un congrès
hal-00193829
v1
|
|
Nouvelles fonctions de commutation de puissance intégrées sur SiliciumJournées GdR, Oct 2005, Lyon, France
Communication dans un congrès
hal-00188228
v1
|
Optical Gate Control of Power Transistors IEICE-NPERC-J Joint Symposium on Smart Applications of Photonics to New Generation Power Electronics , Dec 2016, Tokyo, Japan
Poster de conférence
hal-01413341
v1
|
Diamond devices in power converters: needs, constraints, and impactWoodhead Publishing. Power Electronics Device Applications of Diamond Semiconductors, chap 6.2, pp.400-431, 2018, 978-0-08-102183-5
Chapitre d'ouvrage
hal-04072435
v1
|
|
Commande des composants à semi-conducteurs de puissance : contexteTechniques de l'Ingénieur , d3230v2, 2017
Chapitre d'ouvrage
hal-01756766
v1
|
|
Industrial and power electronicsintroducing to circuits andsystems, Unesco, 2012
Chapitre d'ouvrage
hal-00821040
v1
|
Diamond MIS TransistorUnited States, Patent n° : US11569381 (B2). 2023
Brevet
hal-04019131
v1
|
|
Dispositif de commande, de protection et de surveillance de d'état de santé d’un transistor de puissanceFrance, Patent n° : FR2207714 // Priorité 27/07/22. 2023
Brevet
hal-04765219
v1
|
|
Optoelectronic device for generating single photons, associated memory, multiplexer, implant and methodFrance, Patent n° : FR3123149 (B1), US2024243218 (A1), PCT/EP2022/063421. 2023
Brevet
hal-04913328
v1
|
|
DEVICE FOR CONTROLLING, PROTECTING AND MONITORING THE STATE OF HEALTH OF A POWER TRANSISTORFrance, Patent n° : WO2023FR51145 20230724. 2022
Brevet
hal-04778732
v1
|
|
Dispositif électronique de puissance a structure d’interconnexion électrique planeFrance, N° de brevet: 16/54036. 2016
Brevet
hal-01518798
v1
|
|
Dispositif électronique de puissance à cellule de commutation 3D verticaleFrance, N° de brevet: 14/60636. 2014
Brevet
hal-01518820
v1
|
Promotion d'une approche système dans l'intégration monolithique pour semi-conducteurs de puissance2006
Autre publication scientifique
hal-00202667
v1
|
Deliverable D1.4 – Report on fabricated Diamond power transistors – Batch 2Public deliverable of Diamond Converter and Arc fault DEtection for high-altitude operations (Horizon Europe). 2024
Rapport
hal-04710737
v1
|
|
Deliverable D1.3 – Report on Functional prototype Diamond power Field Effect Transistors (batch 1)Public deliverable of Diamond Converter and Arc fault DEtection for high-altitude operations (Horizon Europe). 2023
Rapport
hal-04710720
v1
|
|
Deliverable D1.2 – Preliminary Design of the Diamond Power DevicePublic deliverable of Diamond Converter and Arc fault DEtection for high-altitude operations (Horizon Europe). 2022
Rapport
(rapport d’expertise collective)
hal-04710707
v1
|
|
Deliverable D1.1 – State of the Art of diamond power devices and convertersPublic deliverable of Diamond Converter and Arc fault DEtection for high-altitude operations (Horizon Europe). 2021
Rapport
(rapport d’expertise collective)
hal-04710672
v1
|
|
Intégration monolithique des fonctions d'interface au sein de composants de puissance à structure verticaleEnergie électrique. Institut National Polytechnique de Grenoble - INPG, 2008. Français. ⟨NNT : ⟩
Thèse
tel-00344847
v1
|
|
HABILITATION A DIRIGER DES RECHERCHES Spécialité : Electronique, Electrotechnique, Automatique et Traitement du signal (EEATS)Energie électrique. Institut Polytechnique de Grenoble, 2015
HDR
tel-01187283
v1
|
|
Two Phase PWM2024
Logiciel
hal-04699064
v1
|