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Nikolay Cherkashin
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- 0000-0002-0322-0864
- IdRef : 183426924
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Extended defects in ion-implanted si during nanosecond laser annealingJunction Technology (IWJT), 2014 International Workshop on, May 2014, Shanghai, China. pp.7-12, ⟨10.1109/IWJT.2014.6842019⟩
Communication dans un congrès
hal-01721156v1
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