Nikolay Cherkashin

206

Documents

Identifiants chercheurs

Présentation

Publications

High Temperature Operation and Spectral Stability of InGaN/GaN Ring Microlasers on Silicon

Natalia Kryzhanovskaya , Sergey Komarov , Eduard Moiseev , Konstantin Ivanov , Dmitry Masyutin et al.

IEEE Photonics Technology Letters, 2026, 38 (4), pp.243-246. ⟨10.1109/LPT.2025.3628068⟩

Article dans une revue hal-05367652v1

Optically Induced Irreversible Ferroelastic and Ferroelectric Switching in Epitaxial BaTiO 3 Films on Silicon

Ibukun Olaniyan , Alfredo Blázquez Martínez , Valentin Väinö Hevelke , Sven Wiesner , Rong Wu et al.

ACS Nano, 2025, ⟨10.1021/acsnano.5c05309⟩

Article dans une revue hal-05327838v1

Origin of strain in H+ ion implanted LiTaO3 single crystals

A. Louiset , S. Schamm-Chardon , O. Kononchuk , C. Magén , Nikolay Cherkashin

APL Materials, 2025, 13 (11), pp.111109. ⟨10.1063/5.0291228⟩

Article dans une revue hal-05363153v1

Ferroelectricity in Single‐Crystalline BaTiO<sub>3</sub> Nanodisks on Silicon

Ibukun Olaniyan , Jürgen Albert , Beatriz Canabarro , Haidong Lu , Sven Wiesner et al.

Advanced Functional Materials, 2025, ⟨10.1002/adfm.202507905⟩

Article dans une revue hal-05202953v1

High temperature evolution of interfacial metal film bonding two 4H-SiC substrates

Maëlle Le Cunff , François Rieutord , Didier Landru , Oleg Kononchuk , Nikolay Cherkashin

Applied Surface Science, 2025, 682, pp.161678. ⟨10.1016/j.apsusc.2024.161678⟩

Article dans une revue hal-04776692v1

Shaping single crystalline BaTiO 3 nanostructures by focused neon or helium ion milling

I I Olaniyan , S W Schmitt , J Albert , J Garcia Fernandez , Cécile Marcelot et al.

Nanotechnology, 2024, 35 (33), pp.335301. ⟨10.1088/1361-6528/ad4713⟩

Article dans une revue hal-04616424v1

Switchable topological polar states in epitaxial BaTiO3 nanoislands on silicon

Ibukun Olaniyan , Iurii Tikhonov , Valentin Väinö Hevelke , Sven Wiesner , Leifeng Zhang et al.

Nature Communications, 2024, 15 (1), pp.10047. ⟨10.1038/s41467-024-54285-z⟩

Article dans une revue hal-04793436v1

High temperature evolution of a confined silicon layer

Maëlle Le Cunff , François Rieutord , Didier Landru , Oleg Kononchuk , Nikolay Cherkashin

Journal of Applied Physics, 2024, 135 (24), ⟨10.1063/5.0205878⟩

Article dans une revue hal-04628219v1

Quantitative mapping of strain and displacement fields over HR-TEM and HR-STEM images of crystals with reference to a virtual lattice

Nikolay Cherkashin , A. Louiset , A. Chmielewski , D.J. Kim , C. Dubourdieu et al.

Ultramicroscopy, 2023, 253, pp.113778. ⟨10.1016/j.ultramic.2023.113778⟩

Article dans une revue hal-04129547v1

Electromechanically Coupled III-N Quantum Dots

Daniele Barettin , Alexei Sakharov , Andrey Tsatsulnikov , Andrey Nikolaev , Nikolay Cherkashin

Nanomaterials, 2023, 13 (2), pp.241. ⟨10.3390/nano13020241⟩

Article dans une revue hal-03924964v1

Impact of Local Composition on the Emission Spectra of InGaN Quantum-Dot LEDs

Daniele Barettin , Alexei V Sakharov , Andrey F Tsatsulnikov , Andrey E Nikolaev , Alessandro Pecchia et al.

Nanomaterials, 2023, 13 (8), pp.1367. ⟨10.3390/nano13081367⟩

Article dans une revue hal-04085810v1

Experimentally-Verified Modeling of InGaAs Quantum Dots

Alexander Kosarev , Vladimir Chaldyshev , Nikolay Cherkashin

Nanomaterials, 2022, 12 (12), pp.1967. ⟨10.3390/nano12121967⟩

Article dans une revue hal-03690840v1

Peculiarities of Epitaxial Growth of III–N LED Heterostructures on SiC/Si Substrates

Nikolay Cherkashin , A. Sakharov , A. Nikolaev , V. Lundin , S. Usov et al.

Pis'ma v Zhurnal Tekhnicheskoi Fiziki / Technical Physics Letters, 2021, 47 (10), pp.753-756. ⟨10.1134/S106378502108006X⟩

Article dans une revue hal-03690810v1

Effect of Nitrogen Doping on the Crystallization Kinetics of Ge2Sb2Te5

Minh Anh Luong , Nikolay Cherkashin , Béatrice Pécassou , Chiara Sabbione , Frédéric Mazen et al.

Nanomaterials, 2021, 11 (7), pp.1729. ⟨10.3390/nano11071729⟩

Article dans une revue hal-03375510v1

Reconstruction of depth resolved strain tensor in off-axis single crystals: Application to H + ions implanted LiTaO 3

Antonin Louiset , Sylvie Schamm-Chardon , Oleg Kononchuk , Nikolay Cherkashin

Applied Physics Letters, 2021, 118 (8), pp.082903. ⟨10.1063/5.0040729⟩

Article dans une revue hal-03154232v1

Metallic AsSb nanoinclusions strongly enriched by Sb in AlGaAsSb metamaterial

Nikolay Bert , Vladimir Chaldyshev , Nikolay Cherkashin , Vladimir Nevedomskiy , Valery Preobrazhenskii et al.

Journal of Applied Physics, 2019, 125 (14), pp.145106. ⟨10.1063/1.5048076⟩

Article dans une revue hal-02096562v1

Sb-rich nanoinclusions in an AlGaAsSb metamaterial

Nikolay Bert , Vladimir Chaldyshev , Nikolay Cherkashin , Vladimir Nevedomskiy , Valery Preobrazhenskii et al.

MRS Advances, 2019, pp.1-8. ⟨10.1557/adv.2019.44⟩

Article dans une revue hal-02086243v1

Quantum dot 850 nm VCSELs with extreme high temperature stability operating at bit rates up to 25 Gbit/s at 150 °C

N. Ledentsov Jr. , M. Agustin , V.A. Shchukin , J.-R. Kropp , N. Ledentsov et al.

Solid-State Electronics, 2019, 155, pp.150-158. ⟨10.1016/j.sse.2019.03.018⟩

Article dans une revue hal-02123597v1

Compositional accuracy in atom probe tomography analyses performed on III-N light emitting diodes

Enrico Di Russo , Nikolay Cherkashin , Maxim Korytov , A. Nikolaev , A. Sakharov et al.

Journal of Applied Physics, 2019, 126 (12), pp.124307. ⟨10.1063/1.5113799⟩

Article dans une revue hal-02298940v1

Room temperature yellow InGaAlP quantum dot laser

N.N. Ledentsov , V.A. Shchukin , Yu. Shernyakov , M.M. Kulagina , A.S. Payusov et al.

Solid-State Electronics, 2019, 155, pp.129-138. ⟨10.1016/j.sse.2019.03.009⟩

Article dans une revue hal-02123602v1

InGaAlP/GaAs Injection Lasers of the Orange Optical Range (~600 nm)

A. Nadtochiy , Yu. Shernyakov , M. Kulagina , A. Payusov , N. Yu. Gordeev et al.

Fizika i tekhnika poluprovodnicov / Semiconductors, 2019, 53 (12), pp.1699-1704. ⟨10.1134/S1063782619160218⟩

Article dans une revue hal-02905168v1

Morphology of GaAs crystals heterogeneously integrated on nominal (001) Si by epitaxial lateral overgrowth on tunnel oxide via Ge nano-seeding

Marie Coste , Timothée Molière , Nikolay Cherkashin , Géraldine Hallais , Laetitia Vincent et al.

Thin Solid Films, 2018, 647, pp.13-18. ⟨10.1016/j.tsf.2017.12.015⟩

Article dans une revue istex hal-02322919v1

Room-temperature yellow-orange (In,Ga,Al)P–GaP laser diodes grown on (n11) GaAs substrates

N. N Ledentsov , V A Shchukin , Yu M Shernyakov , M. M Kulagina , A. S Payusov et al.

Optics Express, 2018, 26 (11), pp.13985-13994. ⟨10.1364/OE.26.013985⟩

Article dans une revue hal-01793971v1

Detailed characterisation of focused ion beam induced lateral damage on silicon carbide samples by electrical scanning probe microscopy and transmission electron microscopy

F. Stumpf , A. A. Abu Quba , P. Singer , M. Rumler , Nikolay Cherkashin et al.

Journal of Applied Physics, 2018, 123 (12), pp.125104. ⟨10.1063/1.5022558⟩

Article dans une revue hal-01745004v1

Impact of He and H relative depth distributions on the result of sequential He+ and H+ ion implantation and annealing in silicon

Nikolay Cherkashin , Nabil Daghbouj , Grégory Seine , Alain Claverie

Journal of Applied Physics, 2018, 123 (16), pp.161556 - 161559. ⟨10.1063/1.5012505⟩

Article dans une revue hal-01736014v1

A method to determine the pressure and densities of gas stored in blisters: Application to H and He sequential ion implantation in silicon

Nabil Daghbouj , Nikolay Cherkashin , Alain Claverie

Microelectronic Engineering, 2018, 190, pp.54-56. ⟨10.1016/j.mee.2018.01.006⟩

Article dans une revue hal-01736187v1

A bottom-up approach for controlled deformation of carbon nanotubes through blistering of supporting substrate surface

V S Prudkovskiy , Fabrice Iacovella , K P Katin , M M Maslov , Nikolay Cherkashin

Nanotechnology, 2018, 29 (36), pp.365304. ⟨10.1088/1361-6528/aacc5d⟩

Article dans une revue hal-01827571v1

Carrier transport and emission efficiency in InGaN quantum-dot based light-emitting diodes

Daniele Barettin , Matthias auf Der Maur , Aldo Di Carlo , Alessandro Pecchia , Andrei F Tsatsulnikov et al.

Nanotechnology, 2017, 28 (27), ⟨10.1088/1361-6528/aa75a8⟩

Article dans une revue hal-01736017v1

Electron microscopy by specimen design: application to strain measurements

Nikolay Cherkashin , Thibaud Denneulin , Martin Hÿtch

Scientific Reports, 2017, 7 (1), pp.12394 - 12394. ⟨10.1038/s41598-017-12695-8⟩

Article dans une revue hal-01707848v1

(In,Ga,Al)P-GaP laser diodes grown on high-index GaAs surfaces emitting in the green, yellow and bright red spectral range

N.N. Ledentsov , V.A. Shchukin , Y.M. Shernyakov , M.M. Kulagina , A.S. Payusov et al.

Semiconductor Science and Technology, 2017, 32 (2), ⟨10.1088/1361-6641/aa5144⟩

Article dans une revue hal-01736018v1

Influence of electromechanical coupling on optical properties of InGaN quantum-dot based light-emitting diodes

D. Barettin , M.A.D. Maur , A.D. Di Carlo , A. Pecchia , A.F. Tsatsulnikov et al.

Nanotechnology, 2017, 28 (1), ⟨10.1088/0957-4484/28/1/015701⟩

Article dans une revue hal-01736015v1

Multi-color monolithic III-nitride light-emitting diodes: Factors controlling emission spectra and efficiency

S.Y. Karpov , Nikolay Cherkashin , Wsevolod V. Lundin , Andrey E. Nikolaev , Alexei V. Sakharov et al.

Physica Status Solidi A (applications and materials science), 2016, 213 (1), pp.19-29. ⟨10.1002/pssa.201532491⟩

Article dans une revue hal-01721146v1

High current density GaAs/Si rectifying heterojunction by defect free Epitaxial Lateral overgrowth on Tunnel Oxide from nano-seed

Charles Renard , Timothée Molière , Nikolay Cherkashin , José Alvarez , Laetitia Vincent et al.

Scientific Reports, 2016, 6, pp.25328. ⟨10.1038/srep25328⟩

Article dans une revue hal-01316731v1

On the origin of dislocation loops in irradiated materials: A point of view from silicon

Alain Claverie , Nikolay Cherkashin

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2016, 374, pp.82-89. ⟨10.1016/j.nimb.2015.09.011⟩

Article dans une revue istex hal-01719487v1

Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs

Andrei F. Tsatsulnikov , Wsevolod V. Lundin , Alexei V. Sakharov , E.E. Zavarin , S.O. Usov et al.

Semiconductors, 2016, 50 (9), pp.1241-1247. ⟨10.1134/S1063782616090232⟩

Article dans une revue hal-01721148v1

Effect of the order of He+ and H+ ion co-implantation on damage generation and thermal evolution of complexes, platelets, and blisters in silicon

Nabil Daghbouj , Nikolay Cherkashin , François-Xavier Darras , Vincent Paillard , M. Fnaiech et al.

Journal of Applied Physics, 2016, 119 (13), pp.135308 - 245301. ⟨10.1063/1.4945032⟩

Article dans une revue hal-01719485v1

Determination of the free gibbs energy of plate-like precipitates of hydrogen molecules and silicon vacancies formed after H+ ion implantation into silicon and annealing

Nikolay Cherkashin , François-Xavier Darras , Alain Claverie

Solid State Phenomena, 2016, 242, pp.190-195. ⟨10.4028/www.scientific.net/SSP.242.190⟩

Article dans une revue hal-01719486v1

Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation

V.G. Tikhomirov , V.E. Zemlyakov , V.V. Volkov , Y.M. Parnes , V.N. Vyuginov et al.

Semiconductors, 2016, 50 (2), pp.244-248. ⟨10.1134/S1063782616020263⟩

Article dans une revue hal-01721147v1

Effect of the design of the active region of monolithic multi-color LED heterostructures on their spectra and emission efficiency

Andrei F. Tsatsulnikov , Wsevolod V. Lundin , Alexei V. Sakharov , E.E. Zavarin , S.O. Usov et al.

Semiconductors, 2015, 49 (11), pp.1516-1521. ⟨10.1134/S1063782615110238⟩

Article dans une revue hal-01721152v1

Formation of three-dimensional islands in the active region of InGaN based light emitting diodes using a growth interruption approach

Andrei F. F Tsatsulnikov , Wsevolod V. V Lundin , Alexei V. V Sakharov , Andrey E. E Nikolaev , E.E. E Zavarin et al.

Science of advanced materials, 2015, 7 (8), pp.1629-1635. ⟨10.1166/sam.2015.2277⟩

Article dans une revue hal-01721151v1

Modelling of point defect complex formation and its application to H+ ion implanted silicon

Nikolay Cherkashin , François-Xavier Darras , P. Pochet , S. Reboh , Nicolas Ratel-Ramond et al.

Acta Materialia, 2015, 99, pp.187-195. ⟨10.1016/j.actamat.2015.07.078⟩

Article dans une revue istex hal-01736020v1

Cracks and blisters formed close to a silicon wafer surface by He-H co-implantation at low energy

Nikolay Cherkashin , Nabil Daghbouj , François-Xavier Darras , M. Fnaiech , Alain Claverie

Journal of Applied Physics, 2015, 118 (24), pp.245301 - 135308. ⟨10.1063/1.4938108⟩

Article dans une revue hal-01719496v1

Role of compositional fluctuations and their suppression on the strain and luminescence of InGaN alloys

Konstantinos Pantzas , Gilles Patriarche , David Troadec , Mathieu Kociak , Nikolay Cherkashin et al.

Journal of Applied Physics, 2015, 117 (5), pp.55705. ⟨10.1063/1.4907210⟩

Article dans une revue hal-01721149v1

Extended Defects Formation in Nanosecond Laser-Annealed Ion Implanted Silicon

Yang Qiu , Fuccio Cristiano , Karim Huet , Fulvio Mazzamuto , Giuseppe Fisicaro et al.

Nano Letters, 2014, 14 (4), pp.1769-1775. ⟨10.1021/nl4042438⟩

Article dans une revue hal-01659180v1

The effect of Ge content on the formation and evolution of 113 defects in SiGe alloys

Larbi Laânab , Amine Belafhaili , Fuccio Cristiano , Nikolay Cherkashin , Alain Claverie

Physica Status Solidi C: Current Topics in Solid State Physics, 2014, 11 (1), pp.20-23. ⟨10.1002/pssc.201300177⟩

Article dans une revue istex hal-01719497v1

Growth of high quality micrometer scale GaAs/Si crystals from (001) Si nano-areas in SiO<inf>2</inf>

Charles Renard , Nikolay Cherkashin , Alexandre Jaffré , Timothée Molière , Géraldine Hallais et al.

Journal of Crystal Growth, 2014, 401, pp.554-558. ⟨10.1016/j.jcrysgro.2014.01.065⟩

Article dans une revue istex hal-01721160v1

Local stress-induced effects on AlGaAs/AlOx oxidation front shape

Fares Chouchane , Guilhem Almuneau , Nikolay Cherkashin , Alexandre Arnoult , Guy Lacoste et al.

Applied Physics Letters, 2014, 105 (4), pp.41909 - 41909. ⟨10.1063/1.4892094⟩

Article dans une revue hal-01721161v1

Dynamic scattering theory for dark-field electron holography of 3D strain fields

Axel Lubk , Elsa Javon , Nikolay Cherkashin , Shay Reboh , Christophe Gatel et al.

Ultramicroscopy, 2014, 136, pp.42-49. ⟨10.1016/j.ultramic.2013.07.007⟩

Article dans une revue istex hal-01721153v1

Dependence of the efficiency of III-N blue LEDs on the structural perfection of GaN epitaxial buffer layers

Wsevolod V. Lundin , Andrey E. Nikolaev , A.V. Sakharov , S.O. Usov , E.E. Zavarin et al.

Semiconductors, 2014, 48 (1), pp.53-57. ⟨10.1134/S1063782614010199⟩

Article dans une revue hal-01721154v1

Quantification of the number of Si interstitials formed by hydrogen implantation in silicon using boron marker layers

François-Xavier Darras , Nikolay Cherkashin , Fuccio Cristiano , Emmanuel Scheid , Oleg Kononchuk et al.

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2014, 327 (1), pp.29-32. ⟨10.1016/j.nimb.2013.09.045⟩

Article dans une revue istex hal-01719500v1

Dynamical effects in strain measurements by dark-field electron holography

Elsa Javon , Axel Lubk , Robin Cours , Shay Reboh , Nikolay Cherkashin et al.

Ultramicroscopy, 2014, 147, pp.70-85. ⟨10.1016/j.ultramic.2014.06.005⟩

Article dans une revue istex hal-01721158v1

Local strain measurements at dislocations, disclinations and domain boundaries

Martin Hÿtch , Christophe Gatel , Axel Lubk , Thibaud Denneulin , Lise Durand et al.

Microscopy and Microanalysis, 2014, 20 (3), pp.1044-1045. ⟨10.1017/S1431927614006941⟩

Article dans une revue hal-01721157v1

X-ray determination of threading dislocation densities in GaN/Al<inf>2</inf>O<inf>3</inf>(0001) films grown by metalorganic vapor phase epitaxy

Viktor S. Kopp , Vladimir M. Kaganer , Marina V. Baidakova , Wsevolod V. Lundin , Andrey E. Nikolaev et al.

Journal of Applied Physics, 2014, 115 (7), pp.073507. ⟨10.1063/1.4865502⟩

Article dans une revue hal-01721159v1

Influence of the Germanium content on the amorphization of silicon-germanium alloys during ion implantation

A. Belafhaili , L. Laânab , Fuccio Cristiano , Nikolay Cherkashin , Alain Claverie

Materials Science in Semiconductor Processing, 2013, 16 (6), pp.1655-1658. ⟨10.1016/j.mssp.2013.04.014⟩

Article dans une revue istex hal-01736024v1

Nanoscale organization by elastic interactions between H and He platelets in Si

Shay Reboh , J-F. Barbot , Maxime Vallet , M.F. Beaufort , F. Rieutord et al.

Journal of Applied Physics, 2013, 114 (7), pp.073517. ⟨10.1063/1.4818812⟩

Article dans une revue hal-01736021v1

Strain in hydrogen-implanted si investigated using dark-field electron holography

Nikolay Cherkashin , Shay Reboh , Axel Lubk , Martin Hÿtch , Alain Claverie

Applied Physics Express, 2013, 6 (9), ⟨10.7567/APEX.6.091301⟩

Article dans une revue hal-01736022v1

Determination of stress, strain, and elemental distribution within In(Ga)As quantum dots embedded in GaAs using advanced transmission electron microscopy

Nikolay Cherkashin , Shay Reboh , Martin Hÿtch , Alain Claverie , V.V. Preobrazhenskii et al.

Applied Physics Letters, 2013, 102 (17), pp.173115. ⟨10.1063/1.4804380⟩

Article dans une revue hal-01736028v1

Dislocation and antiphase domain free microscale GaAs crystals grown on SiO2 from (001) Si nano-areas

Charles Renard , Nikolay Cherkashin , Alexandre Jaffré , Laetitia Vincent , A. Michel et al.

Applied Physics Letters, 2013, 102 (19), pp.191915 - 191915-4. ⟨10.1063/1.4807386⟩

Article dans une revue hal-00931275v1

Effect of H-implantation in the local elastic properties of silicon crystals

Shay Reboh , F. Rieutord , L. Vignoud , F. Mazen , Nikolay Cherkashin et al.

Applied Physics Letters, 2013, 103 (18), pp.181911. ⟨10.1063/1.4828659⟩

Article dans une revue hal-01736023v1

Confinement of vacancies during annealing of H implanted GaN sandwiched between two {InGaN/GaN} superlattices

Nikolay Cherkashin , Alain Claverie , D. Sotta , J.-M. Bethoux , L. Capello et al.

Applied Physics Letters, 2012, 101 (2), pp.023105. ⟨10.1063/1.4733619⟩

Article dans une revue hal-01736033v1

InGaN/GaN heterostructures grown by submonolayer deposition

A.F. Tsatsulnikov , W.V. Lundin , E.E. Zavarin , A.V. Sakharov , Y.G. Musikhin et al.

Semiconductors, 2012, 46 (10), pp.1335-1340. ⟨10.1134/S106378261210017X⟩

Article dans une revue istex hal-01736029v1

Nanoscale concentration and strain distribution in pseudomorphic films Si1−xGex/Si processed by pulsed laser induced epitaxy

L. Vincent , F. Fossard , T. Kociniewski , L. Largeau , Nikolay Cherkashin et al.

Applied Surface Science, 2012, 258 (23), pp.9208-9212. ⟨10.1016/j.apsusc.2011.07.074⟩

Article dans une revue istex hal-01736031v1

Application of the O-lattice theory for the reconstruction of the high-angle near 90? tilt Si(1 1 0)/(0 0 1) boundary created by wafer bonding

Nikolay Cherkashin , O. Kononchuk , Shay Reboh , Martin Hÿtch

Acta Materialia, 2012, 60 (3), pp.1161-1173. ⟨10.1016/j.actamat.2011.10.054⟩

Article dans une revue istex hal-01736034v1

Composition and local strain mapping in Au-catalyzed axial Si/Ge nanowires

L. Vincent , R. Boukhicha , Nikolay Cherkashin , Shay Reboh , G. Patriarche et al.

Nanotechnology, 2012, 23 (39), ⟨10.1088/0957-4484/23/39/395701⟩

Article dans une revue istex hal-01736036v1

Monolithic white LEDs: Approaches, technology, design

V.M. Ustinov , A.F. Tsatsulnikov , V.V. Lundin , A.V. Sakharov , A.E. Nikolaev et al.

Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques, 2012, 6 (3), pp.501-504. ⟨10.1134/S1027451012060237⟩

Article dans une revue hal-01736030v1

Effect of stimulated phase separation on properties of blue, green and monolithic white LEDs

A.F. Tsatsulnikov , W.V. Lundin , A.V. Sakharov , E.E. Zavarin , S.O. Usov et al.

Physica Status Solidi C: Current Topics in Solid State Physics, 2012, 9 (3-4), pp.774-777. ⟨10.1002/pssc.201100339⟩

Article dans une revue istex hal-01736032v1

Composite InGaN/GaN/InAlN heterostructures emitting in the yellow-red spectral region

A.F. Tsatsulnikov , W.V. Lundin , E.E. Zavarin , A.E. Nikolaev , A.V. Sakharov et al.

Semiconductors, 2012, 46 (10), pp.1281-1285. ⟨10.1134/S1063782612100168⟩

Article dans une revue istex hal-01736035v1

Specific features of depth distribution profiles of implanted cobalt ions in rutile TiO 2

A.A. Achkeev , R.I. Khaibullin , L.R. Tagirov , A. Mackova , V. Hnatowicz et al.

Physics of the Solid State, 2011, 53 (3), pp.543-553. ⟨10.1134/S1063783411030024⟩

Article dans une revue istex hal-01736037v1

Strain mapping in layers and devices by electron holography

Martin Hÿtch , Nikolay Cherkashin , Shay Reboh , Florent Houdellier , Alain Claverie

Physica Status Solidi A (applications and materials science), 2011, 208 (3), pp.580-583. ⟨10.1002/pssa.201000281⟩

Article dans une revue istex hal-01736038v1

InGaN/GaN short-period superlattices: synthesis, properties, applications

A. F. Tsatsulnikov , W. V. Lundin , A. V. Sakharov , E. E. Zavarin , S. O. Usov et al.

Physica Status Solidi C: Current Topics in Solid State Physics, 2011, 8 (7-8), pp.2308--2310. ⟨10.1002/pssc.201001040⟩

Article dans une revue istex hal-01736040v1

Reconstruction of a high angle tilt (110)/(001) boundary in Si using O-lattice theory

Nikolay Cherkashin , O. Kononchuk , Martin Hÿtch

Solid State Phenomena, 2011, 178-179, pp.489-494. ⟨10.4028/www.scientific.net/SSP.178-179.489⟩

Article dans une revue hal-01736039v1

Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice

W.V. Lundin , A.E. Nikolaev , A.V. Sakharov , E.E. Zavarin , G.A. Valkovskiy et al.

Journal of Crystal Growth, 2011, 315 (1), pp.267--271. ⟨10.1016/j.jcrysgro.2010.09.043⟩

Article dans une revue istex hal-01736042v1

Effect of pressure in the growth reactor on the properties of the active region in the InGaN/GaN light-emitting diodes

W.V. Lundin , E.E. Zavarin , M.A. Sinitsyn , A.V. Sakharov , S.O. Usov et al.

Semiconductors, 2010, 44 (1), pp.123-126. ⟨10.1134/S1063782610010215⟩

Article dans une revue istex hal-01736044v1

The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes

V.S. Sizov , A.F. Tsatsulnikov , A.V. Sakharov , W.V. Lundin , E.E. Zavarin et al.

Semiconductors, 2010, 44 (7), pp.924-930. ⟨10.1134/S106378261007016X⟩

Article dans une revue istex hal-01736047v1

Controlled drive-in and precipitation of hydrogen during plasma hydrogenation of silicon using a thin compressively strained SiGe layer

F. Okba , Nikolay Cherkashin , Z. Di , M. Nastasi , F. Rossi et al.

Applied Physics Letters, 2010, 97 (3), pp.31917-31917. ⟨10.1063/1.3467455⟩

Article dans une revue hal-01736050v1

On the microstructure of Si coimplanted with H+ and He + ions at moderate energies

Shay Reboh , F. Schaurich , A. Declemy , J-F. Barbot , M.F. Beaufort et al.

Journal of Applied Physics, 2010, 108 (2), pp.023502. ⟨10.1063/1.3459884⟩

Article dans une revue hal-01736048v1

Fabrication, structural and electrical properties of compressively strained Ge-on-insulator substrates.

M. Hartmann , L. Sanchez , W. van den Daele , A. Abadie , L. Baud et al.

Semiconductor Science & Technology, 2010, 25, pp.075010

Article dans une revue hal-00596336v1

Formation of composite InGaN/GaN/InAlN quantum dots

A.F. Tsatsul'Nikov , E.E. Zavarin , N.V. Kryzhanovskaya , W.V. Lundin , A.V. Saharov et al.

Semiconductors, 2010, 44 (10), pp.1338-1341. ⟨10.1134/S1063782610100167⟩

Article dans une revue istex hal-01736045v1

Cyclic Deposition / Etch processes for the formation of Si raised sources and drains in advanced MOSFETs

J.M. Hartmann , M. Py , P.H. Morel , T. Ernst , B. Prévitali et al.

ECS Transactions, 2010, 33 (6), pp.391-407. ⟨10.1149/1.3487570⟩

Article dans une revue hal-01736046v1

Amorphization, recrystallization and end of range defects in germanium

Alain Claverie , S. Koffel , Nikolay Cherkashin , Gérard Benassayag , P. Scheiblin

Thin Solid Films, 2010, 518 (9), pp.2307--2313. ⟨10.1016/j.tsf.2009.09.162⟩

Article dans une revue istex hal-01736049v1

Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes

A.F. Tsatsulnikov , W.V. Lundin , A.V. Sakharov , E.E. Zavarin , S.O. Usov et al.

Semiconductors, 2010, 44 (1), pp.93-97. ⟨10.1134/S1063782610010161⟩

Article dans une revue istex hal-01736052v1

On the influence of elastic strain on the accommodation of carbon atoms into substitutional sites in strained Si:C layers grown on Si substrates

Nikolay Cherkashin , Martin Hÿtch , Florent Houdellier , Florian Hüe , Vincent Paillard et al.

Applied Physics Letters, 2009, 94 (14), pp.141910. ⟨10.1063/1.3116648⟩

Article dans une revue hal-00417300v1

Epitaxial growth of Ge thick layers on nominal and 6° off Si(0 0 1)\mathsemicolon Ge surface passivation by Si

J M Hartmann , A Abbadie , Nikolay Cherkashin , H Grampeix , L Clavelier

Semiconductor Science and Technology, 2009, 24 (5), pp.055002. ⟨10.1088/0268-1242/24/5/055002⟩

Article dans une revue istex hal-01736056v1

Modeling and experiments on diffusion and activation of phosphorus in germanium

P. Tsouroutas , D. Tsoukalas , I. Zergioti , Nikolay Cherkashin , Alain Claverie

Journal of Applied Physics, 2009, 105 (9), pp.094910. ⟨10.1063/1.3117485⟩

Article dans une revue hal-01736053v1

Effect of strain relaxation on active-region formation in InGaN/(Al)GaN heterostructures for green LEDs

A.V. Sakharov , W.V. Lundin , E.E. Zavarin , M.A. Sinitsyn , A.E. Nikolaev et al.

Semiconductors, 2009, 43 (6), pp.812-817. ⟨10.1134/S1063782609060232⟩

Article dans une revue istex hal-01736055v1

End of range defects in Ge

S. Koffel , Nikolay Cherkashin , Florent Houdellier , Martin Hÿtch , Gérard Benassayag et al.

Journal of Applied Physics, 2009, 105, pp.126110. ⟨10.1063/1.3153985⟩

Article dans une revue hal-01736054v1

Diffusion and activation of phosphorus in germanium

P. Tsouroutas , D. Tsoukalas , I. Zergioti , Nikolay Cherkashin , Alain Claverie

Materials Science in Semiconductor Processing, 2008, 11 (5-6), pp.372--377. ⟨10.1016/j.mssp.2008.09.005⟩

Article dans une revue istex hal-01736063v1

Reduced Pressure-Chemical Vapour Deposition of Si/SiGe heterostructures for nanoelectronics

J.M. Hartmann , F. Andrieu , D. Lafond , T. Ernst , Y. Bogumilowicz et al.

Materials Science and Engineering: B, 2008, 154-155 (1-3), pp.76-84. ⟨10.1016/j.mseb.2008.08.009⟩

Article dans une revue istex hal-01736060v1

Imaging Si nanoparticles embedded in SiO2 layers by (S)TEM-EELS

Sylvie Schamm-Chardon , Caroline Bonafos , H. Coffin , Nikolay Cherkashin , Marzia Carrada et al.

Ultramicroscopy, 2008, 108 (4), pp.346--357. ⟨10.1016/j.ultramic.2007.05.008⟩

Article dans une revue istex hal-01736064v1

Impact of the transient formation of molecular hydrogen on the microcrack nucleation and evolution in H-implanted Si (001)

S. Personnic , K.K. Bourdelle , F. Letertre , A. Tauzin , Nikolay Cherkashin et al.

Journal of Applied Physics, 2008, 103 (2), pp.23508-1 - 23508-9. ⟨10.1063/1.2829807⟩

Article dans une revue hal-01736058v1

Formation and evolution of F nanobubbles in amorphous and crystalline Si

S. Boninelli , G. Impellizzeri , S. Mirabella , F. Priolo , E. Napolitani et al.

Applied Physics Letters, 2008, 93 (6), pp.61906 - 171916. ⟨10.1063/1.2969055⟩

Article dans une revue hal-01736061v1

Splitting kinetics of Si$_{0.8}$Ge$_{0.2}$ layers implanted with H or sequentially with He and H

P. Nguyen , K.K. Bourdelle , C. Aulnette , F. Lallement , N. Daix et al.

Journal of Applied Physics, 2008, 104, pp.113526. ⟨10.1063/1.3033555⟩

Article dans une revue hal-01736059v1

Oxide-nitride-oxide memory stacks formed by low-energy Si ion implantation into nitride and wet oxidation

V. Ioannou-Sougleridis , P. Dimitrakis , V.Em. Vamvakas , P. Normand , Caroline Bonafos et al.

Microelectronic Engineering, 2007, 84 (9-10), pp.1986--1989. ⟨10.1016/j.mee.2007.04.068⟩

Article dans une revue istex hal-01736069v1

Comparison of platelet formation in hydrogen and helium-implanted silicon

Xavier Hebras , P. Nguyen , K.K. Bourdelle , F. Letertre , Nikolay Cherkashin et al.

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2007, 262 (1), pp.24-28. ⟨10.1016/j.nimb.2007.04.158⟩

Article dans une revue istex hal-01736070v1

Wet oxidation of nitride layer implanted with low-energy Si ions for improved oxide-nitride-oxide memory stacks

V. Ioannou-Sougleridis , P. Dimitrakis , V.Em. Vamvakas , P. Normand , Caroline Bonafos et al.

Applied Physics Letters, 2007, 90 (26), pp.263513. ⟨10.1063/1.2752769⟩

Article dans une revue hal-01736066v1

Influence of the initial supersaturation of solute atoms on the size of nanoparticles grown by an Ostwald ripening mechanism

Nikolay Cherkashin , Alain Claverie , Caroline Bonafos , V.V. Chaldyshev , N.A. Bert et al.

Journal of Applied Physics, 2007, 102 (2), pp.023520. ⟨10.1063/1.2749303⟩

Article dans une revue hal-01736067v1

Materials science issues for the fabrication of nanocrystal memory devices by ultra low energy ion implantation

Alain Claverie , Caroline Bonafos , Gérard Benassayag , Sylvie Schamm-Chardon , Nikolay Cherkashin et al.

Defect and Diffusion Forum (Online), 2006, 258-260, pp.531-541

Article dans une revue hal-00204809v1

Transformation of {1 1 3} defects into dislocation loops mediated by the {1 1 1} rod-like defects

S. Boninelli , Nikolay Cherkashin , Alain Claverie , Fuccio Cristiano

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2006, 253 (1-2), pp.80-84. ⟨10.1016/j.nimb.2006.10.019⟩

Article dans une revue istex hal-01736073v1

Defects evolution and dopant activation anomalies in ion implanted silicon

Fuccio Cristiano , Y. Lamrani , F. Severac , M. Gavelle , S. Boninelli et al.

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2006, 253 (1-2), pp.68-79. ⟨10.1016/j.nimb.2006.10.046⟩

Article dans une revue istex hal-01736079v1

Evidences of an intermediate rodlike defect during the transformation of {113} defects into dislocation loops

S. Boninelli , Nikolay Cherkashin , Alain Claverie , Fuccio Cristiano

Applied Physics Letters, 2006, 89 (16), pp.161904. ⟨10.1063/1.2361178⟩

Article dans une revue hal-01736076v1

Laser annealing for n+/p junction formation in germanium

P. Tsouroutas , D. Tsoukalas , A. Florakis , I. Zergioti , A.A. Serafetinides et al.

Materials Science in Semiconductor Processing, 2006, 9 (4-5), pp.644--649. ⟨10.1016/j.mssp.2006.08.013⟩

Article dans une revue istex hal-01736078v1

Oxidation of Si nanocrystals fabricated by ultralow-energy ion implantation in thin SiO2 layers

H. Coffin , Caroline Bonafos , Sylvie Schamm-Chardon , Nikolay Cherkashin , Gérard Benassayag et al.

Journal of Applied Physics, 2006, 99 (4), pp.044302. ⟨10.1063/1.2171785⟩

Article dans une revue hal-01736074v1

Quantitative local strain measurements in compressive strained Ge/tensile strained Si bi-layers grown on top of relaxed Si0.5Ge0.5 virtual substrates

Nikolay Cherkashin , Martin Hÿtch , Etienne Snoeck , Florian Hüe , J.M. Hartmann et al.

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2006, 253 (1-2), pp.145-148. ⟨10.1016/j.nimb.2006.10.051⟩

Article dans une revue istex hal-01736071v1

Synthesis of mono and bi-layer of Si nanocrystals embedded in a dielectric matrix by e-beam evaporation of SiO/SiO2 thin films

M. Perego , M. Fanciulli , Caroline Bonafos , Nikolay Cherkashin

Materials Science and Engineering: C, 2006, 26 (5-7), pp.835--839. ⟨10.1016/j.msec.2005.09.058⟩

Article dans une revue istex hal-01736077v1

Quantitative strain and stress measurements in Ge/Si dual channels grown on a Si0.5Ge0.5 virtual substrate

Nikolay Cherkashin , Martin Hÿtch , Etienne Snoeck , Alain Claverie , J.M. Hartmann et al.

Materials Science and Engineering: B, 2005, 124-125, pp.118--122. ⟨10.1016/j.mseb.2005.08.054⟩

Article dans une revue istex hal-01736084v1

Si nanocrystals by ultra-low-energy ion beam-synthesis for non-volatile memory applications

Caroline Bonafos , H. Coffin , Sylvie Schamm-Chardon , Nikolay Cherkashin , Gérard Benassayag et al.

Solid-State Electronics, 2005, 49 (11), pp.1734--1744. ⟨10.1016/j.sse.2005.10.001⟩

Article dans une revue istex hal-01736088v1

Fabrication of nanocrystal memories by ultra low energy ion implantation

Nikolay Cherkashin , Caroline Bonafos , H. Coffin , Marzia Carrada , Sylvie Schamm-Chardon et al.

Physica Status Solidi C: Current Topics in Solid State Physics, 2005, 2 (6), pp.1907--1911. ⟨10.1002/pssc.200460523⟩

Article dans une revue hal-01736090v1

Size and aerial density distributions of Ge nanocrystals in a SiO 2 layer produced by molecular beam epitaxy and rapid thermal processing

A. Kanjilal , J.L. Hansen , P. Gaiduk , A.N. Larsen , P. Normand et al.

Applied physics. A, Materials science & processing, 2005, 81 (2), pp.363-366. ⟨10.1007/s00339-004-2924-3⟩

Article dans une revue istex hal-01736082v1

Si nanocrystals by ultra-low energy ion implantation for non-volatile memory applications

H. Coffin , Caroline Bonafos , Sylvie Schamm-Chardon , Marzia Carrada , Nikolay Cherkashin et al.

Materials Science and Engineering: B, 2005, 124-125, pp.499--503. ⟨10.1016/j.mseb.2005.08.129⟩

Article dans une revue istex hal-01736081v1

SiGe virtual substrates growth up to 50% Ge concentration for Si/Ge dual channel epitaxy

Y. Bogumilowicz , J.M. Hartmann , Nikolay Cherkashin , Alain Claverie , G. Rolland et al.

Materials Science and Engineering: B, 2005, 124-125 (SUPPL.), pp.113-117. ⟨10.1016/j.mseb.2005.08.052⟩

Article dans une revue istex hal-01736080v1

Deactivation of Solid Phase Epitaxy-Activated Boron Ultrashallow Junctions

W. Lerch , S. Paul , J. Niess , Fuccio Cristiano , Y. Lamrani et al.

Journal of The Electrochemical Society, 2005, 152 (10), pp.G787. ⟨10.1149/1.2018176⟩

Article dans une revue hal-01736089v1

Structure determination of clusters formed in ultra-low energy high-dose implanted silicon

Nikolay Cherkashin , Martin Hÿtch , Fuccio Cristiano , Alain Claverie

Solid State Phenomena, 2005, 108-109, pp.303-308. ⟨10.4028/www.scientific.net/SSP.108-109.303⟩

Article dans une revue hal-01736085v1

High germanium content SiGe virtual substrates grown at high temperatures

Y. Bogumilowicz , J.M. Hartmann , F. Laugier , G. Rolland , T. Billon et al.

Journal of Crystal Growth, 2005, 283 (3-4), pp.346--355. ⟨10.1016/j.jcrysgro.2005.06.036⟩

Article dans une revue istex hal-01736086v1

On the “Life” of {113} Defects

Nikolay Cherkashin , P. Calvo , Fuccio Cristiano , B. de Mauduit , Alain Claverie

MRS Online Proceedings Library, 2004, 810, pp.103-108. ⟨10.1557/PROC-810-C3.7⟩

Article dans une revue hal-01736093v1

Ion beam induced defects in crystalline silicon

Fuccio Cristiano , Nikolay Cherkashin , Xavier Hebras , P. Calvo , Y. Lamrani et al.

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2004, 216 (1-4), pp.46-56. ⟨10.1016/j.nimb.2003.11.019⟩

Article dans une revue istex hal-01736101v1

Capacitance study of electron traps in low-temperature-grown GaAs

P. N. Brunkov , A. A. Gutkin , A. K. Moiseenko , Yu. G. Musikhin , V. V. Chaldyshev et al.

Semiconductors, 2004, 38 (4), pp.387--392. ⟨10.1134/1.1734663⟩

Article dans une revue istex hal-01736105v1

Multi-dot floating-gates for nonvolatile semiconductor memories: Their ion beam synthesis and morphology

T. Müller , K.-H. Heinig , W. Möller , Caroline Bonafos , H. Coffin et al.

Applied Physics Letters, 2004, 85 (12), pp.2373-2375

Article dans une revue hal-01736097v1

Depth dependence of defect evolution and TED during annealing

B. Colombeau , N.E.B. Cowern , Fuccio Cristiano , P. Calvo , Y. Lamrani et al.

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2004, 216, pp.90-94

Article dans une revue hal-00140976v1

Manipulation of two-dimensional arrays of Si nanocrystals embedded in thin SiO 2 layers by low energy ion implantation

Caroline Bonafos , Marzia Carrada , Nikolay Cherkashin , H. Coffin , D. Chassaing et al.

Journal of Applied Physics, 2004, 95 (10), pp.5696-5702. ⟨10.1063/1.1695594⟩

Article dans une revue hal-01736103v1

Thermal stability of boron electrical activation in preamorphised ultra-shallow junctions

Fuccio Cristiano , Nikolay Cherkashin , P. Calvo , Y. Lamrani , Xavier Hebras et al.

Materials Science and Engineering: B, 2004, 114-115 (SPEC. ISS.), pp.174-179. ⟨10.1016/j.mseb.2004.07.049⟩

Article dans une revue istex hal-01736096v1

Resonant Raman scattering of a single layer of Si nanocrystals on a silicon substrate

A. Wellner , Vincent Paillard , H. Coffin , Nikolay Cherkashin , Caroline Bonafos

Journal of Applied Physics, 2004, 96 (4), pp.2403-2405. ⟨10.1063/1.1765853⟩

Article dans une revue hal-01736095v1

Thermal evolution of {1 1 3} defects in silicon: transformation against dissolution

P. Calvo , Alain Claverie , Nikolay Cherkashin , B. Colombeau , Y. Lamrani et al.

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2004, 216 (1-4), pp.173-177. ⟨10.1016/j.nimb.2003.11.075⟩

Article dans une revue istex hal-01736098v1

Activation, Diffusion and Defect Analysis of a Spike Anneal Thermal Cycle

Silke Paul , Wilfried Lerch , Xavier Hebras , Nikolay Cherkashin , Fuccio Cristiano

MRS Online Proceedings Library, 2004, 810, ⟨10.1557/proc-810-c5.4⟩

Article dans une revue hal-01736104v1

Effect of nonradiative recombination centers on photoluminescence efficiency in quantum dot structures

M. V. Maksimov , D. S. Sizov , A. G. Makarov , I. N. Kayander , L. V. Asryan et al.

Semiconductors, 2004, 38 (10), pp.1207--1211. ⟨10.1134/1.1808830⟩

Article dans une revue istex hal-01736102v1

High Ge content Si / SiGe heterostructures for microelectronics and optoelectronics purposes

Y. Bogumilowicz , J.M. Hartmann , J.F. Damlencourt , B. Vandelle , A. Abbadie et al.

Proceedings - Electrochemical Society, 2004, 7, pp.665-679

Article dans une revue hal-01736107v1

Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications

P. Normand , E. Kapetanakis , P. Dimitrakis , D. Skarlatos , K. Beltsios et al.

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2004, 216 (1-4), pp.228-238. ⟨10.1016/j.nimb.2003.11.039⟩

Article dans une revue istex hal-01736094v1

Control over the parameters of InAs-GaAs quantum dot arrays in the Stranski-Krastanow growth mode

Nikolay Cherkashin , M. V. Maksimov , A. G. Makarov , V. A. Shchukin , V. M. Ustinov et al.

Semiconductors, 2003, 37 (7), pp.861--865. ⟨10.1134/1.1592865⟩

Article dans une revue istex hal-01736113v1

Effect of annealing environment on the memory properties of thin oxides with embedded si nanocrystals obtained by low-energy ion-beam synthesis

P. Normand , E. Kapetanakis , P. Dimitrakis , D. Tsoukalas , K. Beltsios et al.

Applied Physics Letters, 2003, 83 (1), pp.168-170. ⟨10.1063/1.1588378⟩

Article dans une revue hal-01736112v1

Effect of ion energy and dose on the positioning of 2D-arrays of Si nanocrystals ion beam synthesised in thin SiO2 layers

Marzia Carrada , Nikolay Cherkashin , Caroline Bonafos , Gérard Benassayag , D. Chassaing et al.

Materials Science and Engineering: B, 2003, 101 (1-3), pp.204-207. ⟨10.1016/S0921-5107(02)00724-9⟩

Article dans une revue istex hal-01736116v1

Structural and electrical properties of silicon dioxide layers with embedded germanium nanocrystals grown by molecular beam epitaxy

A. Kanjilal , J.L. Hansen , P. Gaiduk , A.N. Larsen , Nikolay Cherkashin et al.

Applied Physics Letters, 2003, 82 (8), pp.1212-1214. ⟨10.1063/1.1555709⟩

Article dans une revue hal-01736109v1

Clusters formation in ultralow-energy high-dose boron-implanted silicon

Fuccio Cristiano , Xavier Hebras , Nikolay Cherkashin , Alain Claverie , W. Lerch et al.

Applied Physics Letters, 2003, 83 (26), pp.5407-5409. ⟨10.1063/1.1637440⟩

Article dans une revue hal-01736115v1

Multi-Dot Floating-Gates in MOSFETs for nonvolatile memories - Their ion beam synthesis and morphology

T. Müller , K.-H. Heinig , Caroline Bonafos , H. Coffin , Nikolay Cherkashin et al.

Materials Research Society Symposium - Proceedings, 2003, 792, pp.333-338. ⟨10.1557/PROC-792-R8.7⟩

Article dans une revue hal-01736111v1

Polarized micro-photoluminescence spectroscopy of GaN nanocolumns

T.V. Shubina , V.N. Jmerik , S.V. Ivanov , D.D. Solnyshkov , Nikolay Cherkashin et al.

Physica Status Solidi C: Current Topics in Solid State Physics, 2003, 7, pp.2602-2605. ⟨10.1002/pssc.200303330⟩

Article dans une revue istex hal-01736108v1

Time evolution of the depth profile of {113} defects during transient enhanced diffusion in silicon

B. Colombeau , N.E.B. Cowern , Fuccio Cristiano , P. Calvo , Nikolay Cherkashin et al.

Applied Physics Letters, 2003, 83 (10), pp.1953-1955. ⟨10.1063/1.1608489⟩

Article dans une revue hal-01736110v1

Effects of annealing conditions on charge storage of Si nanocrystal memory devices obtained by low-energy ion beam synthesis

P. Normand , E. Kapetanakis , P. Dimitrakis , D. Skarlatos , D. Tsoukalas et al.

Microelectronic Engineering, 2003, 67-68, pp.629-634. ⟨10.1016/S0167-9317(03)00124-2⟩

Article dans une revue istex hal-01736114v1

The influence of heat treatment conditions on the evaporation of defect regions in structures with InGaAs quantum dots in the GaAs matrix

D. S. Sizov , M. V. Maksimov , A. F. Tsatsul'Nikov , Nikolay Cherkashin , N. V. Kryzhanovskaya et al.

Semiconductors, 2002, 36 (9), pp.1020--1026. ⟨10.1134/1.1507285⟩

Article dans une revue istex hal-01736122v1

Dependence of junction depth and sheet resistance on the thermal budget in the low temperature pre-stabilization regime

B. Bayha , S. Paul , W. Lerch , D.F. Downey , E.A. Arevalo et al.

Proceedings of the International Conference on Ion Implantation Technology, 2002, 22-27-September-2002, pp.618-621. ⟨10.1109/IIT.2002.1258081⟩

Article dans une revue hal-01736121v1

Effect of the growth parameters on the electron structure of quantum dots in InGaAs/GaAs heterostructures

A.A. Tonkikh , V.A. Egorov , N.K. Polyakov , G.?. Tsyrlin , B.V. Volovik et al.

Technical Physics Letters, 2002, 28 (3), pp.191-193. ⟨10.1134/1.1467272⟩

Article dans une revue istex hal-01736119v1

Two- and three-dimensional arrays of nanoscale as clusters in low-temperature grown GaAs

N.A. Bert , Nikolay Cherkashin , V.V. Chaldyshev , Alain Claverie , V.V. Preobrazhenskii et al.

IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC, 2002, pp.233-236. ⟨10.1109/SIM.2002.1242762⟩

Article dans une revue hal-01736118v1

Reversibility of the island shape, volume and density in Stranski-Krastanow growth

N N Ledentsov , V A Shchukin , D Bimberg , V M Ustinov , Nikolay Cherkashin et al.

Semiconductor Science and Technology, 2001, 16 (6), pp.502--506. ⟨10.1088/0268-1242/16/6/316⟩

Article dans une revue istex hal-01736128v1

InGaAs nanodomains formed in situ on the surface of (Al,Ga)As

I.L. Krestnikov , Nikolay Cherkashin , D.S. Sizov , D.A. Bedarev , I.V. Kochnev et al.

Technical Physics Letters, 2001, 27 (3), pp.233-235. ⟨10.1134/1.1359837⟩

Article dans une revue istex hal-01736125v1

Transmission electron microscopy of GaN columnar nanostructures grown by molecular beam epitaxy

V. V. Mamutin , Nikolay Cherkashin , V. A. Vekshin , V. N. Zhmerik , S. V. Ivanov

Physics of the Solid State, 2001, 43 (1), pp.151--156. ⟨10.1134/1.1340201⟩

Article dans une revue istex hal-01736127v1

Optical and structural properties of self-organized InGaAsN/GaAs nanostructures

B V Volovik , a R Kovsh , W Passenberg , H Kuenzel , N Grote et al.

Semiconductor Science and Technology, 2001, 16 (3), pp.186--190. ⟨10.1088/0268-1242/16/3/312⟩

Article dans une revue istex hal-01736129v1

Photoluminescence emission (1.3-1.4 ?m) from quantum dots heterostructures based on GaAs

V.A. Egorov , N.K. Polyakov , A.A. Tonkikh , V.N. Petrov , G.E. Cirlin et al.

Applied Surface Science, 2001, 175-176, pp.243-248

Article dans une revue hal-01736123v1

Reduction of defect density in structures with InAs-GaAs quantum dots grown at low temperature for 1.55 ?m range

N.D. Zakharov , P. Werner , U. Gösele , N.N. Ledentsov , D. Bimberg et al.

Materials Research Society Symposium - Proceedings, 2001, 672, pp.O8.5.1-O8.5.6

Article dans une revue hal-01736124v1

TEM structural studies of undoped and Si-doped GaN grown on Al2O3 substrate

Nikolay Cherkashin , N.A. Bert , Yu.G. Musikhin , S.V. Novikov , T.S. Cheng et al.

Semiconductors, 2000, 34 (8), pp.867-871. ⟨10.1134/1.1188090⟩

Article dans une revue istex hal-01736131v1

Formation of defect-free InGaAs-GaAs quantum dots for 1.3 ?m spectral range grown by metal-organic chemical vapor deposition

I.L. Krestnikov , N.N. Ledentsov , M.V. Maximov , D. Bimberg , D.A. Bedarev et al.

Proceedings of the 8th International Symposium Nanostructures: Physics and Technology, 2000, pp.355-358

Article dans une revue hal-01736132v1

Thermal annealing of defects in InGaAs/GaAs heterostructures with three-dimensional islands

M.M. Sobolev , I.V. Kochnev , V.M. Lantratov , N.A. Bert , Nikolay Cherkashin et al.

Semiconductors, 2000, 34 (2), pp.195-204. ⟨10.1134/1.1187932⟩

Article dans une revue istex hal-01736130v1

Influence of annealing on the formation of inGaAs quantum dots in GaAs matrix during metal organic chemical vapor deposition

Nikolay Cherkashin , N.A. Bert , N.N. Ledentsov , I.V. Kochnev , V.M. Lantratov et al.

Proceedings of the 8th International Symposium Nanostructures: Physics and Technology, 2000, pp.117-120

Article dans une revue hal-01736134v1

1.3 \mathrmμm luminescence and gain from defect-free InGaAs-GaAs quantum dots grown by metal-organic chemical vapour deposition

N N Ledentsov , M V Maximov , D Bimberg , T Maka , C M Sotomayor Torres et al.

Semiconductor Science and Technology, 2000, 15 (6), pp.604--607. ⟨10.1088/0268-1242/15/6/320⟩

Article dans une revue istex hal-01736135v1

Hole and electron traps in the InGaAs/GaAs heterostructures with quantum dots

M.M. Sobolev , I.V. Kochnev , V.M. Lantratov , Nikolay Cherkashin , V.V. Emtsev

Physica B: Condensed Matter, 1999, 273-274, pp.959-962

Article dans une revue hal-01736136v1

Novel approach for displacement and strain mapping from HR-(S)TEM images of crystalline materials

Nikolay Cherkashin

Microscopy of Semi-Conducting Materials Conference 2023, Thomas Walther, Rachel A Oliver, Apr 2023, Cambridge (GB), United Kingdom

Communication dans un congrès hal-04258683v1

Solid and Liquid State Dewetting of Thin Silicon Films Sandwiched between Two Silicon Carbide Substrates

Maëlle Le Cunff , Nikolay Cherkashin , Francois Rieutord , Didier Landru , Oleg Kononchuk

244th ECS Meeting, Oct 2023, Gothenburg, Sweden. pp.1623-1623, ⟨10.1149/MA2023-02331623mtgabs⟩

Communication dans un congrès hal-04735314v1

Polarization pattern at the atomic scale in ferroelectric BaTiO3 under different boundary conditions by HRSTEM

Beatriz Rodrigues Canabarro , Ibukun Olaniyan , Dong Jik Kim , Sebastian Schmitt , César Magen et al.

IMF 2023 - The 15th International Meeting on Ferroelectricity, Mar 2023, Tel AViv, Israel

Communication dans un congrès hal-04253508v1

Reciprocal space-based method for quantitative mapping of strain, absolute and polarization related displacement fields in HR-STEM images of ferroelectrics

Nikolay Cherkashin , Antonin Louiset , Adrian Chmielewski , Dong Jik Kim , Catherine Dubourdieu et al.

IMF 2023 - The 15th International Meeting on Ferroelectricity, Mar 2023, Tel AViv, Israel

Communication dans un congrès hal-04253511v1

Polarization pattern at the atomic scale in ferroelectric BaTiO3 under different boundary conditions by HRSTEM

Beatriz Rodrigues Canabarro , Teresa Hungria , Ibukun Olaniyan , Dong Jik Kim , Sebastian Schmitt et al.

CSBMM and CIASEM 2023, Nov 2023, Olinda, Brazil

Communication dans un congrès hal-04253523v1

Fabrication of barium titanate nanopillars by neon ion milling

Ibukun Olaniyan , S.W. Schmitt , Javier Garcia-Fernandez , J. Albert , Veeresh Deshpande et al.

IEEE ISAF 2022, Jun 2022, Tours, France

Communication dans un congrès hal-03750458v1

Quantitative mapping of strain and displacement fields in complex oxides by STEM studies

Nikolay Cherkashin

Emergent phenomena in low-dimensional ferroelectric structures, May 2022, Berlin, Germany

Communication dans un congrès hal-03698690v1

Determination of intrinsic strain tensor components in nanostructures from HR-(S)TEM images in absence of reference lattice

Nikolay Cherkashin

GADEST-19, Sep 2022, Mondsee, Austria

Communication dans un congrès hal-03814716v1

Time-Resolved Cathodoluminescence in a Transmission Electron Microscope

Sophie Meuret , Nikolay Cherkashin , L. H. G. Tizei , Yves Auad , Sébastien J. Weber et al.

11th International Conference on Metamaterials, Photonic Crystals and Plasmonics (META 2021), Jul 2021, Warsaw, Poland

Communication dans un congrès hal-04449931v1

Transfer of Si and LiTaO3 thin layers: physics behind a fracture of materials by SmartCutTM technology

Nikolay Cherkashin

International conference PhysicA.SPb/2020, Oct 2020, Saint-Petersbourg, Russia

Communication dans un congrès hal-03019217v1

Quantum-dot oxide-confined 850-nm VCSELs with extreme temperature stability operating at 25 Gbit/s up to 180deg C

Nikolay Ledentsov , Lukasz Chorchos , Oleg Makarov , Jörg-Reinhardt Kropp , Vitaly Shchukin et al.

Vertical-Cavity Surface-Emitting Lasers XXIV, Feb 2020, San Francisco, United States. pp.15, ⟨10.1117/12.2543244⟩

Communication dans un congrès hal-03375527v1

Building blocks development for defect-free growth of GaAs on silicon for tandem solar cells

Denis Mencaraglia , Charles Renard , Nikolay Cherkashin , G. Hallais , Alexandre Jaffré et al.

36th European Photovoltaic Solar Energy Conference and Exhibition, WIP, Sep 2019, Marseille, France. pp.757, ⟨10.4229/EUPVSEC20192019-3BV.2.49⟩

Communication dans un congrès hal-02343896v1

Quantitative strain distribution in electromechanically coupled IV-IV and III-V semiconductor quantum dots

Nikolay Cherkashin

MGCTF 2019, Jul 2019, Saint Petersbourg, Russia

Communication dans un congrès hal-02304422v1

Strain measurements and mapping with a nanometer resolution and high precision at the most basic conventional TEM: moiré based technique by specimen design

Nikolay Cherkashin

Energy Materials Nanotechnology (EMN 2018), May 2018, Heraklion, Greece

Communication dans un congrès hal-01763087v1

Advanced methods for strain measurement in crystalline nanomaterials: application to multilayer InAlGaP quantum dots formed on high-index (11l)GaAs substrates”

Nikolay Cherkashin , V.A. Shchukin , Nikolai N. Ledentsov

XXVII International Materials Research Congress (IMRC 2018), Aug 2018, Cancun, Mexico

Communication dans un congrès hal-01773833v1

New developments of the SmartCut process for slicing thin layers

Alain Claverie , Nikolay Cherkashin

EMN Conference, May 2018, Héraklion, Greece

Communication dans un congrès hal-01767500v1

Advanced methods for strain measurements in crystalline materials by transmission electron microscopy”, Nanostructures: Physics and Technology

Nikolay Cherkashin

26th Intern. Symposium, Jun 2018, Minsk, Belarus

Communication dans un congrès hal-01767536v1

Materials science behind the Smart Cut process

Nikolay Cherkashin , François-Xavier Darras , Nabil Daghbouj , Alain Claverie

22nd Intern. Conf. on Ion Implantation Technology (IIT 2018), Sep 2018, Würzburg, Germany

Communication dans un congrès hal-01767778v1

Sequential He++H+ ion implantation in silicon: factors affecting blistering”

Nikolay Cherkashin , Nabil Daghbouj , Alain Claverie

4th International Conference On Nano Structuring by Ion Beam (ICNIB 2017), Oct 2017, Indore, India

Communication dans un congrès hal-01763083v1

. Effect of the Order of He and H Ion Sequential Implantations on Damage Generation and Subsequent Thermal Evolution of Defects in Silicon

Alain Claverie , Nikolay Cherkashin

SMMIB 2017, 2017, Lisbonne, Portugal

Communication dans un congrès hal-01763581v1

Green, yellow and bright red (In,Ga,Al)P-GaP diode lasers grown on high-index GaAs substrates

N.N. Ledentsov , V.A. Shchukin , Y.M. Shernyakov , M.M. Kulagina , A.S. Payusov et al.

SPIE LASE 2017, High-Power Diode Laser Technology XV, Jan 2017, San Francisco, United States. ⟨10.1117/12.2252957⟩

Communication dans un congrès hal-01736016v1

The materials science behind the Smart Cut process

Alain Claverie , Nikolay Cherkashin

IWPSD 2017, 2017, New Delhi, India

Communication dans un congrès hal-01763588v1

Blistering of silicon surfaces due to very low energy H and He co-implantation

Alain Claverie , Nabil Daghbouj , Nikolay Cherkashin

EMN Conference, May 2016, Dubrovnic, Croatia

Communication dans un congrès hal-01763096v1

Advanced characterization of semiconductors

Nikolay Cherkashin , François-Xavier Darras , Maxim Korytov , Christophe Gatel , Martin Hÿtch

XV B-MRS, Sep 2016, Campinas, Brazil

Communication dans un congrès hal-01767758v1

MOCVD Grown InGaN/GaN Three-Dimensional Islands: Growth Approaches, Strain-Composition Characterization, Exploitation for LEDs

Nikolay Cherkashin , Martin Hÿtch , Maxim Korytov , Daniele Barettin , A. V. Sakharov et al.

Energy Materials Nanotechnology (EMN), May 2016, Dubrovnik, Croatia

Communication dans un congrès hal-01763074v1

Green (In,Ga,Al)P-GaP light-emitting diodes grown on high-index GaAs surfaces

N.N. Ledentsov , V.A. Shchukin , J. Lyytikäinen , O. Okhotnikov , Nikolay Cherkashin et al.

SPIE OPTO 2015, Feb 2015, San Francisco, United States. ⟨10.1117/12.2083953⟩

Communication dans un congrès hal-01736019v1

Realistic model of LED structure with InGaN quantum-dots active region

Daniele Barettin , Matthias auf Der Maur , Alessandro Pecchia , Walter Rodrigues , Andrei F. Tsatsulnikov et al.

Nanotechnology (IEEE-NANO) 2015 IEEE 15th International Conference on, 2015, Unknown, Unknown Region. pp.1543-1546, ⟨10.1109/NANO.2015.7388939⟩

Communication dans un congrès hal-01721150v1

Measurement of crystalline lattice strain by transmission electron microscopy”

Nikolay Cherkashin , Florent Houdellier , Martin Hÿtch , Maxim Korytov

14ème colloque de la Société Française des Microscopies, Jun 2015, Nice, France

Communication dans un congrès hal-01763051v1

Strain imaging of processed layers and devices by dark field electron holography

Alain Claverie , Victor Boureau , Martin Hÿtch , Nikolay Cherkashin

Congress of the Electron Microscopy Society of India, Jul 2014, ??, India

Communication dans un congrès hal-01763638v1

Extended defects in ion-implanted si during nanosecond laser annealing

Fuccio Cristiano , Y. Qiu , Eléna Bedel-Pereira , Karim Huet , Fulvio Mazzamuto et al.

Junction Technology (IWJT), 2014 International Workshop on, May 2014, Shanghai, China. pp.7-12, ⟨10.1109/IWJT.2014.6842019⟩

Communication dans un congrès hal-01721156v1

Route toward III-V multispectral solar cells on silicon

Timothée Molière , Charles Renard , Alexandre Jaffré , Laetitia Vincent , Daniel Bouchier et al.

E-MRS Spring Meeting 2014, European Materials Research Society, May 2014, Lille, France

Communication dans un congrès hal-01099576v1

Defects and Strain imaging of ion implanted materials

Alain Claverie , Nikolay Cherkashin

Ion Implantation Technology 2014, Jun 2014, Portland, United States

Communication dans un congrès hal-01763647v1

Optoelectronic structures with InAlN layers grown by MOVPE

A.V. Sakharov , W.V. Lundin , E.E. Zavarin , M.A. Sinitsyn , S.O. Usov et al.

30th International Conference on the Physics of Semiconductors, Jul 2010, Séoul, South Korea. pp.107-108, ⟨10.1063/1.3666279⟩

Communication dans un congrès hal-01736041v1

Determination of strain within Si1-yCy layers grown by CVD on a Si substrate

Nikolay Cherkashin , A. Gouye , Florian Hüe , Florent Houdellier , Martin Hÿtch et al.

Symposium C – Quantitative Electron Microscopy for Materials Science, 2007, undetermined, France. pp.12-19, ⟨10.1557/PROC-1026-C07-03⟩

Communication dans un congrès hal-01736057v1

Deep green and monolithic white LEDs based on combination of short-period InGaN/GaN superlattice and InGaN QWs

A.F. Tsatsulnikov , W.V. Lundin , A.V. Sakharov , E.E. Zavarin , S.O. Usov et al.

PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors, 2011, Seoul, France. pp.253-254, ⟨10.1063/1.3666350⟩

Communication dans un congrès hal-01736043v1

Strain Mapping of Layers and Devices Using Electron Holography

Alain Claverie , Nikolay Cherkashin , Florian Hüe , Shay Reboh , Florent Houdellier et al.

ECS Trans. 2010, 2010, Unknown, Unknown Region. ⟨10.1149/1.3487533⟩

Communication dans un congrès hal-01736051v1

Critical Analysis of Different Techniques for Measuring Strain in Si1-yCy Layers Grown by CVD on a Si Substrate

Nikolay Cherkashin , Adrien Gouye , Florian Hüe , Florent Houdellier , Martin Hÿtch et al.

ECS Transactions, May 2008, Unknown, Unknown Region. ⟨10.1149/1.2911510⟩

Communication dans un congrès hal-01736065v1

Crystalline Structure of HfZrO Thin Films and ZrO2 / HfO2 bi-Layers Grown by AVD for MOS Applications

Sandrine Lhostis , Clement Gaumer , Caroline Bonafos , Sylvie Schamm-Chardon , Nikolay Cherkashin et al.

ECS Transactions, 2008, Unknown, Unknown Region. ⟨10.1149/1.2911489⟩

Communication dans un congrès hal-01736062v1

Materials science issues for the fabrication of naocrystal memory devices by ultra low energy ion implantation

Alain Claverie , Caroline Bonafos , Gérard Benassayag , Sylvie Schamm-Chardon , Nikolay Cherkashin et al.

2nd International Conference on Diffusion in Solids and Liquids, DSL-2006, 2006, Aveiro, Portugal

Communication dans un congrès hal-00115744v1

Review of some critical aspects of Ge and GeOI substrates

L. Clavelier , C. Deguet , C. Le Royer , B. Vincent , J.-F. Damlencourt et al.

Workshop on Germanium for CMOS, Nov 2006, ville indéterminée, Unknown Region. pp.789-805, ⟨10.1149/1.2355874⟩

Communication dans un congrès hal-01736072v1

Time dependence study of hydrogen-induced defects in silicon during thermal anneals

S. Personnic , A. Tauzin , K.K. Bourdelle , F. Letertre , N. Kernevez et al.

16th International Conference on Ion Implantation Technology (IIT 2006), Jun 2006, Marseille (France), France. pp.65-68, ⟨10.1063/1.2401463⟩

Communication dans un congrès hal-01736075v1

Ge nanocrystals in MOS-memory structures produced by molecular-beam epitaxy and rapid-thermal processing

A.N. Larsen , A. Kanjilal , J.L. Hansen , P. Gaiduk , P. Normand et al.

Symposium D – Materials and Processes for Nonvolatile Memories, 2005, indéterminée, Unknown Region. pp.263-267, ⟨10.1557/PROC-830-D6.2⟩

Communication dans un congrès hal-01736092v1

Oxidation of Si nanocrystals fabricated by ultra-low energy ion implantation in thin SiO2 layers

H. Coffin , Caroline Bonafos , Sylvie Schamm-Chardon , Nikolay Cherkashin , Marc Respaud et al.

Symposium D – Materials and Processes for Nonvolatile Memories, 2005, indéterminée, Unknown Region. pp.281-286, ⟨10.1557/PROC-830-D6.6⟩

Communication dans un congrès hal-01736087v1

Strained Si and Ge MOSFETs with high-K/metal gate stack for high mobility dual channel CMOS

O. Weber , Y. Bogumilowicz , T. Ernst , J.-M. Hartmann , F. Ducroquet et al.

IEEE International Electron Devices Meeting, 2005, Dec 2005, Washington, United States. pp.137-140, ⟨10.1109/IEDM.2005.1609288⟩

Communication dans un congrès hal-01736083v1

Manipulation of 2D arrays of Si nanocrystals by ultra-low-energy ion beam-synthesis for nonvolatile memories applications

Caroline Bonafos , Nikolay Cherkashin , Marzia Carrada , H. Coffin , Gérard Benassayag et al.

Symposium D – Materials and Processes for Nonvolatile Memories, 2005, indéterminée, Unknown Region. pp.217-222, ⟨10.1557/PROC-830-D5.2⟩

Communication dans un congrès hal-01736091v1

Solid phase epitaxy process integration on 50-nm PMOS devices: Effects of defects on chemical and electrical characteristics of ultra shallow junctions

R. El Farhane , C. Laviron , Fuccio Cristiano , Nikolay Cherkashin , P. Morin et al.

Symposium C – Silicon Front-End Junction Formation-Physics and Technology, 2004, indéterminée, Unknown Region. pp.21-27, ⟨10.1557/PROC-810-C1.4⟩

Communication dans un congrès hal-01736099v1

Activation, diffusion and defect analysis of a spike anneal thermal cycle

Silke Paul , Wilfried Lerch , Xavier Hebras , Nikolay Cherkashin , Fuccio Cristiano

Symposium C – Silicon Front-End Junction Formation-Physics and Technology, 2004, indéterminée, Unknown Region. pp.215-221, ⟨10.1557/PROC-810-C5.4⟩

Communication dans un congrès hal-01736106v1

Solid phase epitaxy - Activation and deactivation of boron in ultra-shallow junctions

W. Lerch , S. Paul , J. Niess , Fuccio Cristiano , Y. Lamrani et al.

Advanced short-time thermal processing for Si-based CMOS devices , 2004, indéterminée, Unknown Region. pp.90-105

Communication dans un congrès hal-01736100v1

Relation between thermal evolution of interstitial defects and transient enhanced diffusion in silicon

Alain Claverie , Fuccio Cristiano , B. Colombeau , Xavier Hebras , P. Calvo et al.

2003, pp.73

Communication dans un congrès hal-00146421v1

High luminescence efficiency from GaAsN layers grown by MBE with RF nitrogen plasma source

V.M. Ustinov , Nikolay Cherkashin , N.A. Bert , A.F. Tsatsul'Nikov , A.R. Kovsh et al.

Symposium H – Progress in Semiconductor Materials for Optoelectronic Applications, 2001, Boston, United States. pp.35-40, ⟨10.1557/PROC-692-H1.10.1⟩

Communication dans un congrès hal-01736117v1

1.3-\upmum edge- and surface-emitting quantum dot lasers grown on GaAs substrates

Victor M. Ustinov , Alexey E. Zhukov , Nikolay A. Maleev , Anton Y. Egorov , Alexey R. Kovsh et al.

Physics and Simulation of Optoelectronic Devices X, 2002, Unknown, Unknown Region. ⟨10.1117/12.470541⟩

Communication dans un congrès hal-01736120v1

Building blocks development for defect-free growth of GaAs on silicon for tandem solar cells

Denis Mencaraglia , Charles Renard , J.P. Connolly , Nikolay Cherkashin , G. Hallais et al.

JNPV 2019, Dec 2019, Dourdan, France

Poster de conférence hal-02344131v1

Characterization of Process-Induced Defects

Nikolay Cherkashin , Alain Claverie

Alain Claverie ; Mireille Mouis. Transmission Electron Microscopy in Micro-Nanoelectronics, Wiley-Blackwell, pp.165--198, 2013, ⟨10.1002/9781118579022.ch7⟩

Chapitre d'ouvrage hal-01736027v1

Dark-Field Electron Holography for Strain Mapping

Martin Hÿtch , Florent Houdellier , Nikolay Cherkashin , Shay Reboh , Elsa Javon et al.

Alain Claverie; Mireille Mouis. Transmission Electron Microscopy in Micro-Nanoelectronics, Wiley-Blackwell, pp.81--106, 2013, ⟨10.1002/9781118579022.ch4⟩

Chapitre d'ouvrage hal-01736026v1

Précipitation sous contrainte dans les semiconducteurs

Obtention De , Nikolay Cherkashin

Science des matériaux [cond-mat.mtrl-sci]. Univesité Toulouse III- Paul Sabatier; Ecole doctorale Sciences de la matière; Section CNU Milieux denses et matériaux, 2017

HDR tel-01800161v1

Chargement...

Nikolay Cherkashin

Présentation

Publications

Publications

High Temperature Operation and Spectral Stability of InGaN/GaN Ring Microlasers on Silicon

Optically Induced Irreversible Ferroelastic and Ferroelectric Switching in Epitaxial BaTiO 3 Films on Silicon

Origin of strain in H+ ion implanted LiTaO3 single crystals

Ferroelectricity in Single‐Crystalline BaTiO<sub>3</sub> Nanodisks on Silicon

High temperature evolution of interfacial metal film bonding two 4H-SiC substrates

Shaping single crystalline BaTiO 3 nanostructures by focused neon or helium ion milling

Switchable topological polar states in epitaxial BaTiO3 nanoislands on silicon

High temperature evolution of a confined silicon layer

Quantitative mapping of strain and displacement fields over HR-TEM and HR-STEM images of crystals with reference to a virtual lattice

Electromechanically Coupled III-N Quantum Dots

Impact of Local Composition on the Emission Spectra of InGaN Quantum-Dot LEDs

Experimentally-Verified Modeling of InGaAs Quantum Dots

Peculiarities of Epitaxial Growth of III–N LED Heterostructures on SiC/Si Substrates

Effect of Nitrogen Doping on the Crystallization Kinetics of Ge2Sb2Te5

Reconstruction of depth resolved strain tensor in off-axis single crystals: Application to H + ions implanted LiTaO 3

Metallic AsSb nanoinclusions strongly enriched by Sb in AlGaAsSb metamaterial

Sb-rich nanoinclusions in an AlGaAsSb metamaterial

Quantum dot 850 nm VCSELs with extreme high temperature stability operating at bit rates up to 25 Gbit/s at 150 °C

Compositional accuracy in atom probe tomography analyses performed on III-N light emitting diodes

Room temperature yellow InGaAlP quantum dot laser

InGaAlP/GaAs Injection Lasers of the Orange Optical Range (~600 nm)

Morphology of GaAs crystals heterogeneously integrated on nominal (001) Si by epitaxial lateral overgrowth on tunnel oxide via Ge nano-seeding

Room-temperature yellow-orange (In,Ga,Al)P–GaP laser diodes grown on (n11) GaAs substrates

Detailed characterisation of focused ion beam induced lateral damage on silicon carbide samples by electrical scanning probe microscopy and transmission electron microscopy

Impact of He and H relative depth distributions on the result of sequential He+ and H+ ion implantation and annealing in silicon

A method to determine the pressure and densities of gas stored in blisters: Application to H and He sequential ion implantation in silicon

A bottom-up approach for controlled deformation of carbon nanotubes through blistering of supporting substrate surface

Carrier transport and emission efficiency in InGaN quantum-dot based light-emitting diodes

Electron microscopy by specimen design: application to strain measurements

(In,Ga,Al)P-GaP laser diodes grown on high-index GaAs surfaces emitting in the green, yellow and bright red spectral range

Influence of electromechanical coupling on optical properties of InGaN quantum-dot based light-emitting diodes

Multi-color monolithic III-nitride light-emitting diodes: Factors controlling emission spectra and efficiency

High current density GaAs/Si rectifying heterojunction by defect free Epitaxial Lateral overgrowth on Tunnel Oxide from nano-seed

On the origin of dislocation loops in irradiated materials: A point of view from silicon

Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs

Effect of the order of He+ and H+ ion co-implantation on damage generation and thermal evolution of complexes, platelets, and blisters in silicon

Determination of the free gibbs energy of plate-like precipitates of hydrogen molecules and silicon vacancies formed after H+ ion implantation into silicon and annealing

Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation

Effect of the design of the active region of monolithic multi-color LED heterostructures on their spectra and emission efficiency

Formation of three-dimensional islands in the active region of InGaN based light emitting diodes using a growth interruption approach

Modelling of point defect complex formation and its application to H+ ion implanted silicon

Cracks and blisters formed close to a silicon wafer surface by He-H co-implantation at low energy

Role of compositional fluctuations and their suppression on the strain and luminescence of InGaN alloys

Extended Defects Formation in Nanosecond Laser-Annealed Ion Implanted Silicon

The effect of Ge content on the formation and evolution of 113 defects in SiGe alloys

Growth of high quality micrometer scale GaAs/Si crystals from (001) Si nano-areas in SiO<inf>2</inf>

Local stress-induced effects on AlGaAs/AlOx oxidation front shape

Dynamic scattering theory for dark-field electron holography of 3D strain fields

Dependence of the efficiency of III-N blue LEDs on the structural perfection of GaN epitaxial buffer layers

Quantification of the number of Si interstitials formed by hydrogen implantation in silicon using boron marker layers

Dynamical effects in strain measurements by dark-field electron holography

Local strain measurements at dislocations, disclinations and domain boundaries

X-ray determination of threading dislocation densities in GaN/Al<inf>2</inf>O<inf>3</inf>(0001) films grown by metalorganic vapor phase epitaxy

Influence of the Germanium content on the amorphization of silicon-germanium alloys during ion implantation

Nanoscale organization by elastic interactions between H and He platelets in Si

Strain in hydrogen-implanted si investigated using dark-field electron holography

Determination of stress, strain, and elemental distribution within In(Ga)As quantum dots embedded in GaAs using advanced transmission electron microscopy

Dislocation and antiphase domain free microscale GaAs crystals grown on SiO2 from (001) Si nano-areas

Effect of H-implantation in the local elastic properties of silicon crystals

Confinement of vacancies during annealing of H implanted GaN sandwiched between two {InGaN/GaN} superlattices

InGaN/GaN heterostructures grown by submonolayer deposition

Nanoscale concentration and strain distribution in pseudomorphic films Si1−xGex/Si processed by pulsed laser induced epitaxy

Application of the O-lattice theory for the reconstruction of the high-angle near 90? tilt Si(1 1 0)/(0 0 1) boundary created by wafer bonding

Composition and local strain mapping in Au-catalyzed axial Si/Ge nanowires

Monolithic white LEDs: Approaches, technology, design

Effect of stimulated phase separation on properties of blue, green and monolithic white LEDs

Composite InGaN/GaN/InAlN heterostructures emitting in the yellow-red spectral region

Specific features of depth distribution profiles of implanted cobalt ions in rutile TiO 2

Strain mapping in layers and devices by electron holography

InGaN/GaN short-period superlattices: synthesis, properties, applications

Reconstruction of a high angle tilt (110)/(001) boundary in Si using O-lattice theory

Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice

Effect of pressure in the growth reactor on the properties of the active region in the InGaN/GaN light-emitting diodes

The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes

Controlled drive-in and precipitation of hydrogen during plasma hydrogenation of silicon using a thin compressively strained SiGe layer

On the microstructure of Si coimplanted with H+ and He + ions at moderate energies

Quantum dot 850 nm VCSELs with extreme high temperature stability operating at bit rates up to 25 Gbit/s at 150 °C