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High temperature evolution of interfacial metal film bonding two 4H-SiC substrates
Maëlle Le Cunff
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Article dans une revue
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Shaping single crystalline BaTiO 3 nanostructures by focused neon or helium ion milling
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Switchable topological polar states in epitaxial BaTiO3 nanoislands on silicon
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High temperature evolution of a confined silicon layer
Maëlle Le Cunff
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Article dans une revue
hal-04628219
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Quantitative mapping of strain and displacement fields over HR-TEM and HR-STEM images of crystals with reference to a virtual lattice
Nikolay Cherkashin
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Article dans une revue
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Electromechanically Coupled III-N Quantum Dots
Daniele Barettin
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Andrey Tsatsulnikov
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Andrey Nikolaev
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Nikolay Cherkashin
Article dans une revue
hal-03924964
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Impact of Local Composition on the Emission Spectra of InGaN Quantum-Dot LEDs
Daniele Barettin
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Alessandro Pecchia
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Article dans une revue
hal-04085810
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Experimentally-Verified Modeling of InGaAs Quantum Dots
Alexander Kosarev
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Article dans une revue
hal-03690840
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Effect of Nitrogen Doping on the Crystallization Kinetics of Ge2Sb2Te5
Minh Anh Luong
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Chiara Sabbione
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Frédéric Mazen
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Article dans une revue
hal-03375510
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Peculiarities of Epitaxial Growth of III–N LED Heterostructures on SiC/Si Substrates
Nikolay Cherkashin
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A. Nikolaev
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Article dans une revue
hal-03690810
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Reconstruction of depth resolved strain tensor in off-axis single crystals: Application to H + ions implanted LiTaO 3
Antonin Louiset
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Sylvie Schamm-Chardon
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Article dans une revue
hal-03154232
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InGaAlP/GaAs Injection Lasers of the Orange Optical Range (~600 nm)
A. Nadtochiy
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Article dans une revue
hal-02905168
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Sb-rich nanoinclusions in an AlGaAsSb metamaterial
Nikolay Bert
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Vladimir Chaldyshev
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Nikolay Cherkashin
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Vladimir Nevedomskiy
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Valery Preobrazhenskii
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Article dans une revue
hal-02086243
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Metallic AsSb nanoinclusions strongly enriched by Sb in AlGaAsSb metamaterial
Nikolay Bert
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Vladimir Chaldyshev
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Nikolay Cherkashin
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Vladimir Nevedomskiy
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Valery Preobrazhenskii
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Article dans une revue
hal-02096562
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Quantum dot 850 nm VCSELs with extreme high temperature stability operating at bit rates up to 25 Gbit/s at 150 °C
N. Ledentsov Jr.
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J.-R. Kropp
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Article dans une revue
hal-02123597
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Compositional accuracy in atom probe tomography analyses performed on III-N light emitting diodes
Enrico Di Russo
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Maxim Korytov
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A. Nikolaev
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Article dans une revue
hal-02298940
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Room temperature yellow InGaAlP quantum dot laser
N.N. Ledentsov
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V.A. Shchukin
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Yu. Shernyakov
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Article dans une revue
hal-02123602
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Detailed characterisation of focused ion beam induced lateral damage on silicon carbide samples by electrical scanning probe microscopy and transmission electron microscopy
F. Stumpf
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P. Singer
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M. Rumler
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Article dans une revue
hal-01745004
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Morphology of GaAs crystals heterogeneously integrated on nominal (001) Si by epitaxial lateral overgrowth on tunnel oxide via Ge nano-seeding
Marie Coste
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Timothée Molière
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Nikolay Cherkashin
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Géraldine Hallais
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Laetitia Vincent
et al.
Article dans une revue
hal-02322919
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Room-temperature yellow-orange (In,Ga,Al)P–GaP laser diodes grown on (n11) GaAs substrates
N. N Ledentsov
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Yu M Shernyakov
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M. M Kulagina
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A. S Payusov
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Article dans une revue
hal-01793971
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Impact of He and H relative depth distributions on the result of sequential He+ and H+ ion implantation and annealing in silicon
Nikolay Cherkashin
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Nabil Daghbouj
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Grégory Seine
,
Alain Claverie
Article dans une revue
hal-01736014
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A bottom-up approach for controlled deformation of carbon nanotubes through blistering of supporting substrate surface
V S Prudkovskiy
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Fabrice Iacovella
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K P Katin
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M M Maslov
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Nikolay Cherkashin
Article dans une revue
hal-01827571
v1
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A method to determine the pressure and densities of gas stored in blisters: Application to H and He sequential ion implantation in silicon
Nabil Daghbouj
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Nikolay Cherkashin
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Alain Claverie
Article dans une revue
hal-01736187
v1
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Influence of electromechanical coupling on optical properties of InGaN quantum-dot based light-emitting diodes
D. Barettin
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M.A.D. Maur
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A.D. Di Carlo
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A. Pecchia
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A.F. Tsatsulnikov
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Article dans une revue
hal-01736015
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Carrier transport and emission efficiency in InGaN quantum-dot based light-emitting diodes
Daniele Barettin
,
Matthias auf Der Maur
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Aldo Di Carlo
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Alessandro Pecchia
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Andrei F Tsatsulnikov
et al.
Article dans une revue
hal-01736017
v1
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Electron microscopy by specimen design: application to strain measurements
Nikolay Cherkashin
,
Thibaud Denneulin
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Martin Hÿtch
Article dans une revue
hal-01707848
v1
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(In,Ga,Al)P-GaP laser diodes grown on high-index GaAs surfaces emitting in the green, yellow and bright red spectral range
N.N. Ledentsov
,
V.A. Shchukin
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Y.M. Shernyakov
,
M.M. Kulagina
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A.S. Payusov
et al.
Article dans une revue
hal-01736018
v1
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Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation
V.G. Tikhomirov
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V.E. Zemlyakov
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V.V. Volkov
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Y.M. Parnes
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V.N. Vyuginov
et al.
Article dans une revue
hal-01721147
v1
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Determination of the free gibbs energy of plate-like precipitates of hydrogen molecules and silicon vacancies formed after H+ ion implantation into silicon and annealing
Nikolay Cherkashin
,
François-Xavier Darras
,
Alain Claverie
Article dans une revue
hal-01719486
v1
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High current density GaAs/Si rectifying heterojunction by defect free Epitaxial Lateral overgrowth on Tunnel Oxide from nano-seed
Charles Renard
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Timothée Molière
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Nikolay Cherkashin
,
José Alvarez
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Laetitia Vincent
et al.
Article dans une revue
hal-01316731
v1
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Multi-color monolithic III-nitride light-emitting diodes: Factors controlling emission spectra and efficiency
S.Y. Karpov
,
Nikolay Cherkashin
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Wsevolod V. Lundin
,
Andrey E. Nikolaev
,
Alexei V. Sakharov
et al.
Article dans une revue
hal-01721146
v1
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Effect of the order of He+ and H+ ion co-implantation on damage generation and thermal evolution of complexes, platelets, and blisters in silicon
Nabil Daghbouj
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Nikolay Cherkashin
,
François-Xavier Darras
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Vincent Paillard
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M. Fnaiech
et al.
Article dans une revue
hal-01719485
v1
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Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs
Andrei F. Tsatsulnikov
,
Wsevolod V. Lundin
,
Alexei V. Sakharov
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E.E. Zavarin
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S.O. Usov
et al.
Article dans une revue
hal-01721148
v1
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On the origin of dislocation loops in irradiated materials: A point of view from silicon
Alain Claverie
,
Nikolay Cherkashin
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2016, 374, pp.82-89. ⟨10.1016/j.nimb.2015.09.011⟩
Article dans une revue
hal-01719487
v1
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Role of compositional fluctuations and their suppression on the strain and luminescence of InGaN alloys
Konstantinos Pantzas
,
Gilles Patriarche
,
David Troadec
,
Mathieu Kociak
,
Nikolay Cherkashin
et al.
Article dans une revue
hal-01721149
v1
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Modelling of point defect complex formation and its application to H+ ion implanted silicon
Nikolay Cherkashin
,
François-Xavier Darras
,
P. Pochet
,
S. Reboh
,
Nicolas Ratel-Ramond
et al.
Article dans une revue
hal-01736020
v1
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Cracks and blisters formed close to a silicon wafer surface by He-H co-implantation at low energy
Nikolay Cherkashin
,
Nabil Daghbouj
,
François-Xavier Darras
,
M. Fnaiech
,
Alain Claverie
Article dans une revue
hal-01719496
v1
|
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Formation of three-dimensional islands in the active region of InGaN based light emitting diodes using a growth interruption approach
Andrei F. F Tsatsulnikov
,
Wsevolod V. V Lundin
,
Alexei V. V Sakharov
,
Andrey E. E Nikolaev
,
E.E. E Zavarin
et al.
Article dans une revue
hal-01721151
v1
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Effect of the design of the active region of monolithic multi-color LED heterostructures on their spectra and emission efficiency
Andrei F. Tsatsulnikov
,
Wsevolod V. Lundin
,
Alexei V. Sakharov
,
E.E. Zavarin
,
S.O. Usov
et al.
Article dans une revue
hal-01721152
v1
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The effect of Ge content on the formation and evolution of 113 defects in SiGe alloys
Larbi Laânab
,
Amine Belafhaili
,
Fuccio Cristiano
,
Nikolay Cherkashin
,
Alain Claverie
Article dans une revue
istex
hal-01719497
v1
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Extended Defects Formation in Nanosecond Laser-Annealed Ion Implanted Silicon
Yang Qiu
,
Fuccio Cristiano
,
Karim Huet
,
Fulvio Mazzamuto
,
Giuseppe Fisicaro
et al.
Article dans une revue
hal-01659180
v1
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Dynamic scattering theory for dark-field electron holography of 3D strain fields
Axel Lubk
,
Elsa Javon
,
Nikolay Cherkashin
,
Shay Reboh
,
Christophe Gatel
et al.
Article dans une revue
hal-01721153
v1
|
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Dependence of the efficiency of III-N blue LEDs on the structural perfection of GaN epitaxial buffer layers
Wsevolod V. Lundin
,
Andrey E. Nikolaev
,
A.V. Sakharov
,
S.O. Usov
,
E.E. Zavarin
et al.
Article dans une revue
hal-01721154
v1
|
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Growth of high quality micrometer scale GaAs/Si crystals from (001) Si nano-areas in SiO<inf>2</inf>
Charles Renard
,
Nikolay Cherkashin
,
Alexandre Jaffré
,
Timothée Molière
,
Géraldine Hallais
et al.
Article dans une revue
hal-01721160
v1
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Local stress-induced effects on AlGaAs/AlOx oxidation front shape
Fares Chouchane
,
Guilhem Almuneau
,
Nikolay Cherkashin
,
Alexandre Arnoult
,
Guy Lacoste
et al.
Article dans une revue
hal-01721161
v1
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Dynamical effects in strain measurements by dark-field electron holography
Elsa Javon
,
Axel Lubk
,
Robin Cours
,
Shay Reboh
,
Nikolay Cherkashin
et al.
Article dans une revue
hal-01721158
v1
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Quantification of the number of Si interstitials formed by hydrogen implantation in silicon using boron marker layers
François-Xavier Darras
,
Nikolay Cherkashin
,
Fuccio Cristiano
,
Emmanuel Scheid
,
Oleg Kononchuk
et al.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2014, 327 (1), pp.29-32. ⟨10.1016/j.nimb.2013.09.045⟩
Article dans une revue
hal-01719500
v1
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Local strain measurements at dislocations, disclinations and domain boundaries
Martin Hÿtch
,
Christophe Gatel
,
Axel Lubk
,
Thibaud Denneulin
,
Lise Durand
et al.
Article dans une revue
hal-01721157
v1
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X-ray determination of threading dislocation densities in GaN/Al<inf>2</inf>O<inf>3</inf>(0001) films grown by metalorganic vapor phase epitaxy
Viktor S. Kopp
,
Vladimir M. Kaganer
,
Marina V. Baidakova
,
Wsevolod V. Lundin
,
Andrey E. Nikolaev
et al.
Article dans une revue
hal-01721159
v1
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Effect of H-implantation in the local elastic properties of silicon crystals
Shay Reboh
,
F. Rieutord
,
L. Vignoud
,
F. Mazen
,
Nikolay Cherkashin
et al.
Article dans une revue
hal-01736023
v1
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Influence of the Germanium content on the amorphization of silicon-germanium alloys during ion implantation
A. Belafhaili
,
L. Laânab
,
Fuccio Cristiano
,
Nikolay Cherkashin
,
Alain Claverie
Article dans une revue
istex
hal-01736024
v1
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Nanoscale organization by elastic interactions between H and He platelets in Si
Shay Reboh
,
J-F. Barbot
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Maxime Vallet
,
M.F. Beaufort
,
F. Rieutord
et al.
Article dans une revue
hal-01736021
v1
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Strain in hydrogen-implanted si investigated using dark-field electron holography
Nikolay Cherkashin
,
Shay Reboh
,
Axel Lubk
,
Martin Hÿtch
,
Alain Claverie
Article dans une revue
hal-01736022
v1
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Determination of stress, strain, and elemental distribution within In(Ga)As quantum dots embedded in GaAs using advanced transmission electron microscopy
Nikolay Cherkashin
,
Shay Reboh
,
Martin Hÿtch
,
Alain Claverie
,
V.V. Preobrazhenskii
et al.
Article dans une revue
hal-01736028
v1
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Dislocation and antiphase domain free microscale GaAs crystals grown on SiO2 from (001) Si nano-areas
Charles Renard
,
Nikolay Cherkashin
,
Alexandre Jaffré
,
Laetitia Vincent
,
A. Michel
et al.
Article dans une revue
hal-00931275
v1
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Confinement of vacancies during annealing of H implanted GaN sandwiched between two {InGaN/GaN} superlattices
Nikolay Cherkashin
,
Alain Claverie
,
D. Sotta
,
J.-M. Bethoux
,
L. Capello
et al.
Article dans une revue
hal-01736033
v1
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Application of the O-lattice theory for the reconstruction of the high-angle near 90? tilt Si(1 1 0)/(0 0 1) boundary created by wafer bonding
Nikolay Cherkashin
,
O. Kononchuk
,
Shay Reboh
,
Martin Hÿtch
Article dans une revue
istex
hal-01736034
v1
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Nanoscale concentration and strain distribution in pseudomorphic films Si1−xGex/Si processed by pulsed laser induced epitaxy
L. Vincent
,
F. Fossard
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T. Kociniewski
,
L. Largeau
,
Nikolay Cherkashin
et al.
Article dans une revue
istex
hal-01736031
v1
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InGaN/GaN heterostructures grown by submonolayer deposition
A.F. Tsatsulnikov
,
W.V. Lundin
,
E.E. Zavarin
,
A.V. Sakharov
,
Y.G. Musikhin
et al.
Article dans une revue
istex
hal-01736029
v1
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Composition and local strain mapping in Au-catalyzed axial Si/Ge nanowires
L. Vincent
,
R. Boukhicha
,
Nikolay Cherkashin
,
Shay Reboh
,
G. Patriarche
et al.
Article dans une revue
istex
hal-01736036
v1
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Monolithic white LEDs: Approaches, technology, design
V.M. Ustinov
,
A.F. Tsatsulnikov
,
V.V. Lundin
,
A.V. Sakharov
,
A.E. Nikolaev
et al.
Article dans une revue
hal-01736030
v1
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Effect of stimulated phase separation on properties of blue, green and monolithic white LEDs
A.F. Tsatsulnikov
,
W.V. Lundin
,
A.V. Sakharov
,
E.E. Zavarin
,
S.O. Usov
et al.
Article dans une revue
istex
hal-01736032
v1
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Composite InGaN/GaN/InAlN heterostructures emitting in the yellow-red spectral region
A.F. Tsatsulnikov
,
W.V. Lundin
,
E.E. Zavarin
,
A.E. Nikolaev
,
A.V. Sakharov
et al.
Article dans une revue
istex
hal-01736035
v1
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Specific features of depth distribution profiles of implanted cobalt ions in rutile TiO 2
A.A. Achkeev
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R.I. Khaibullin
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L.R. Tagirov
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A. Mackova
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V. Hnatowicz
et al.
Article dans une revue
istex
hal-01736037
v1
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Strain mapping in layers and devices by electron holography
Martin Hÿtch
,
Nikolay Cherkashin
,
Shay Reboh
,
Florent Houdellier
,
Alain Claverie
Article dans une revue
istex
hal-01736038
v1
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InGaN/GaN short-period superlattices: synthesis, properties, applications
A. F. Tsatsulnikov
,
W. V. Lundin
,
A. V. Sakharov
,
E. E. Zavarin
,
S. O. Usov
et al.
Article dans une revue
istex
hal-01736040
v1
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Reconstruction of a high angle tilt (110)/(001) boundary in Si using O-lattice theory
Nikolay Cherkashin
,
O. Kononchuk
,
Martin Hÿtch
Article dans une revue
hal-01736039
v1
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Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice
W.V. Lundin
,
A.E. Nikolaev
,
A.V. Sakharov
,
E.E. Zavarin
,
G.A. Valkovskiy
et al.
Article dans une revue
istex
hal-01736042
v1
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Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes
A.F. Tsatsulnikov
,
W.V. Lundin
,
A.V. Sakharov
,
E.E. Zavarin
,
S.O. Usov
et al.
Article dans une revue
istex
hal-01736052
v1
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The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes
V.S. Sizov
,
A.F. Tsatsulnikov
,
A.V. Sakharov
,
W.V. Lundin
,
E.E. Zavarin
et al.
Article dans une revue
istex
hal-01736047
v1
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Controlled drive-in and precipitation of hydrogen during plasma hydrogenation of silicon using a thin compressively strained SiGe layer
F. Okba
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Nikolay Cherkashin
,
Z. Di
,
M. Nastasi
,
F. Rossi
et al.
Article dans une revue
hal-01736050
v1
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Effect of pressure in the growth reactor on the properties of the active region in the InGaN/GaN light-emitting diodes
W.V. Lundin
,
E.E. Zavarin
,
M.A. Sinitsyn
,
A.V. Sakharov
,
S.O. Usov
et al.
Article dans une revue
istex
hal-01736044
v1
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On the microstructure of Si coimplanted with H+ and He + ions at moderate energies
Shay Reboh
,
F. Schaurich
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A. Declemy
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J-F. Barbot
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M.F. Beaufort
et al.
Article dans une revue
hal-01736048
v1
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Fabrication, structural and electrical properties of compressively strained Ge-on-insulator substrates.
M. Hartmann
,
L. Sanchez
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W. van den Daele
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A. Abadie
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L. Baud
et al.
Semiconductor Science & Technology, 2010, 25, pp.075010
Article dans une revue
hal-00596336
v1
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Formation of composite InGaN/GaN/InAlN quantum dots
A.F. Tsatsul'Nikov
,
E.E. Zavarin
,
N.V. Kryzhanovskaya
,
W.V. Lundin
,
A.V. Saharov
et al.
Article dans une revue
istex
hal-01736045
v1
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Cyclic Deposition / Etch processes for the formation of Si raised sources and drains in advanced MOSFETs
J.M. Hartmann
,
M. Py
,
P.H. Morel
,
T. Ernst
,
B. Prévitali
et al.
Article dans une revue
hal-01736046
v1
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Amorphization, recrystallization and end of range defects in germanium
Alain Claverie
,
S. Koffel
,
Nikolay Cherkashin
,
Gérard Benassayag
,
P. Scheiblin
Article dans une revue
istex
hal-01736049
v1
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|
Modeling and experiments on diffusion and activation of phosphorus in germanium
P. Tsouroutas
,
D. Tsoukalas
,
I. Zergioti
,
Nikolay Cherkashin
,
Alain Claverie
Article dans une revue
hal-01736053
v1
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|
Epitaxial growth of Ge thick layers on nominal and 6° off Si(0 0 1)\mathsemicolon Ge surface passivation by Si
J M Hartmann
,
A Abbadie
,
Nikolay Cherkashin
,
H Grampeix
,
L Clavelier
Article dans une revue
istex
hal-01736056
v1
|
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On the influence of elastic strain on the accommodation of carbon atoms into substitutional sites in strained Si:C layers grown on Si substrates
Nikolay Cherkashin
,
Martin Hÿtch
,
Florent Houdellier
,
Florian Hüe
,
Vincent Paillard
et al.
Article dans une revue
hal-00417300
v1
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Effect of strain relaxation on active-region formation in InGaN/(Al)GaN heterostructures for green LEDs
A.V. Sakharov
,
W.V. Lundin
,
E.E. Zavarin
,
M.A. Sinitsyn
,
A.E. Nikolaev
et al.
Article dans une revue
istex
hal-01736055
v1
|
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End of range defects in Ge
S. Koffel
,
Nikolay Cherkashin
,
Florent Houdellier
,
Martin Hÿtch
,
Gérard Benassayag
et al.
Article dans une revue
hal-01736054
v1
|
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Splitting kinetics of Si$_{0.8}$Ge$_{0.2}$ layers implanted with H or sequentially with He and H
P. Nguyen
,
K.K. Bourdelle
,
C. Aulnette
,
F. Lallement
,
N. Daix
et al.
Article dans une revue
hal-01736059
v1
|
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Diffusion and activation of phosphorus in germanium
P. Tsouroutas
,
D. Tsoukalas
,
I. Zergioti
,
Nikolay Cherkashin
,
Alain Claverie
Article dans une revue
istex
hal-01736063
v1
|
|
Impact of the transient formation of molecular hydrogen on the microcrack nucleation and evolution in H-implanted Si (001)
S. Personnic
,
K.K. Bourdelle
,
F. Letertre
,
A. Tauzin
,
Nikolay Cherkashin
et al.
Article dans une revue
hal-01736058
v1
|
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Imaging Si nanoparticles embedded in SiO2 layers by (S)TEM-EELS
Sylvie Schamm-Chardon
,
Caroline Bonafos
,
H. Coffin
,
Nikolay Cherkashin
,
Marzia Carrada
et al.
Article dans une revue
istex
hal-01736064
v1
|
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Reduced Pressure-Chemical Vapour Deposition of Si/SiGe heterostructures for nanoelectronics
J.M. Hartmann
,
F. Andrieu
,
D. Lafond
,
T. Ernst
,
Y. Bogumilowicz
et al.
Article dans une revue
istex
hal-01736060
v1
|
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Formation and evolution of F nanobubbles in amorphous and crystalline Si
S. Boninelli
,
G. Impellizzeri
,
S. Mirabella
,
F. Priolo
,
E. Napolitani
et al.
Article dans une revue
hal-01736061
v1
|
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Oxide-nitride-oxide memory stacks formed by low-energy Si ion implantation into nitride and wet oxidation
V. Ioannou-Sougleridis
,
P. Dimitrakis
,
V.Em. Vamvakas
,
P. Normand
,
Caroline Bonafos
et al.
Article dans une revue
istex
hal-01736069
v1
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Wet oxidation of nitride layer implanted with low-energy Si ions for improved oxide-nitride-oxide memory stacks
V. Ioannou-Sougleridis
,
P. Dimitrakis
,
V.Em. Vamvakas
,
P. Normand
,
Caroline Bonafos
et al.
Article dans une revue
hal-01736066
v1
|
|
Comparison of platelet formation in hydrogen and helium-implanted silicon
Xavier Hebras
,
P. Nguyen
,
K.K. Bourdelle
,
F. Letertre
,
Nikolay Cherkashin
et al.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2007, 262 (1), pp.24-28. ⟨10.1016/j.nimb.2007.04.158⟩
Article dans une revue
istex
hal-01736070
v1
|
|
Influence of the initial supersaturation of solute atoms on the size of nanoparticles grown by an Ostwald ripening mechanism
Nikolay Cherkashin
,
Alain Claverie
,
Caroline Bonafos
,
V.V. Chaldyshev
,
N.A. Bert
et al.
Article dans une revue
hal-01736067
v1
|
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Synthesis of mono and bi-layer of Si nanocrystals embedded in a dielectric matrix by e-beam evaporation of SiO/SiO2 thin films
M. Perego
,
M. Fanciulli
,
Caroline Bonafos
,
Nikolay Cherkashin
Article dans une revue
istex
hal-01736077
v1
|
|
Laser annealing for n+/p junction formation in germanium
P. Tsouroutas
,
D. Tsoukalas
,
A. Florakis
,
I. Zergioti
,
A.A. Serafetinides
et al.
Article dans une revue
istex
hal-01736078
v1
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Materials science issues for the fabrication of nanocrystal memory devices by ultra low energy ion implantation
Alain Claverie
,
Caroline Bonafos
,
Gérard Benassayag
,
Sylvie Schamm-Chardon
,
Nikolay Cherkashin
et al.
Defect Diffus. Forum, 2006, 258-260, pp.531-541
Article dans une revue
hal-00204809
v1
|
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Transformation of {1 1 3} defects into dislocation loops mediated by the {1 1 1} rod-like defects
S. Boninelli
,
Nikolay Cherkashin
,
Alain Claverie
,
Fuccio Cristiano
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2006, 253 (1-2), pp.80-84. ⟨10.1016/j.nimb.2006.10.019⟩
Article dans une revue
istex
hal-01736073
v1
|
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Defects evolution and dopant activation anomalies in ion implanted silicon
Fuccio Cristiano
,
Y. Lamrani
,
F. Severac
,
M. Gavelle
,
S. Boninelli
et al.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2006, 253 (1-2), pp.68-79. ⟨10.1016/j.nimb.2006.10.046⟩
Article dans une revue
istex
hal-01736079
v1
|
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Evidences of an intermediate rodlike defect during the transformation of {113} defects into dislocation loops
S. Boninelli
,
Nikolay Cherkashin
,
Alain Claverie
,
Fuccio Cristiano
Article dans une revue
hal-01736076
v1
|
|
Oxidation of Si nanocrystals fabricated by ultralow-energy ion implantation in thin SiO2 layers
H. Coffin
,
Caroline Bonafos
,
Sylvie Schamm-Chardon
,
Nikolay Cherkashin
,
Gérard Benassayag
et al.
Article dans une revue
hal-01736074
v1
|
|
Quantitative local strain measurements in compressive strained Ge/tensile strained Si bi-layers grown on top of relaxed Si0.5Ge0.5 virtual substrates
Nikolay Cherkashin
,
Martin Hÿtch
,
Etienne Snoeck
,
Florian Hüe
,
J.M. Hartmann
et al.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2006, 253 (1-2), pp.145-148. ⟨10.1016/j.nimb.2006.10.051⟩
Article dans une revue
istex
hal-01736071
v1
|
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Structure determination of clusters formed in ultra-low energy high-dose implanted silicon
Nikolay Cherkashin
,
Martin Hÿtch
,
Fuccio Cristiano
,
Alain Claverie
Article dans une revue
hal-01736085
v1
|
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High germanium content SiGe virtual substrates grown at high temperatures
Y. Bogumilowicz
,
J.M. Hartmann
,
F. Laugier
,
G. Rolland
,
T. Billon
et al.
Article dans une revue
istex
hal-01736086
v1
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Fabrication of nanocrystal memories by ultra low energy ion implantation
Nikolay Cherkashin
,
Caroline Bonafos
,
H. Coffin
,
Marzia Carrada
,
Sylvie Schamm-Chardon
et al.
Article dans une revue
hal-01736090
v1
|
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Size and aerial density distributions of Ge nanocrystals in a SiO 2 layer produced by molecular beam epitaxy and rapid thermal processing
A. Kanjilal
,
J.L. Hansen
,
P. Gaiduk
,
A.N. Larsen
,
P. Normand
et al.
Article dans une revue
istex
hal-01736082
v1
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Si nanocrystals by ultra-low-energy ion beam-synthesis for non-volatile memory applications
Caroline Bonafos
,
H. Coffin
,
Sylvie Schamm-Chardon
,
Nikolay Cherkashin
,
Gérard Benassayag
et al.
Article dans une revue
istex
hal-01736088
v1
|
|
Quantitative strain and stress measurements in Ge/Si dual channels grown on a Si0.5Ge0.5 virtual substrate
Nikolay Cherkashin
,
Martin Hÿtch
,
Etienne Snoeck
,
Alain Claverie
,
J.M. Hartmann
et al.
Article dans une revue
istex
hal-01736084
v1
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SiGe virtual substrates growth up to 50% Ge concentration for Si/Ge dual channel epitaxy
Y. Bogumilowicz
,
J.M. Hartmann
,
Nikolay Cherkashin
,
Alain Claverie
,
G. Rolland
et al.
Article dans une revue
istex
hal-01736080
v1
|
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Deactivation of Solid Phase Epitaxy-Activated Boron Ultrashallow Junctions
W. Lerch
,
S. Paul
,
J. Niess
,
Fuccio Cristiano
,
Y. Lamrani
et al.
Article dans une revue
hal-01736089
v1
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Si nanocrystals by ultra-low energy ion implantation for non-volatile memory applications
H. Coffin
,
Caroline Bonafos
,
Sylvie Schamm-Chardon
,
Marzia Carrada
,
Nikolay Cherkashin
et al.
Article dans une revue
istex
hal-01736081
v1
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Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications
P. Normand
,
E. Kapetanakis
,
P. Dimitrakis
,
D. Skarlatos
,
K. Beltsios
et al.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2004, 216 (1-4), pp.228-238. ⟨10.1016/j.nimb.2003.11.039⟩
Article dans une revue
istex
hal-01736094
v1
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Multi-dot floating-gates for nonvolatile semiconductor memories: Their ion beam synthesis and morphology
T. Müller
,
K.-H. Heinig
,
W. Möller
,
Caroline Bonafos
,
H. Coffin
et al.
Applied Physics Letters, 2004, 85 (12), pp.2373-2375
Article dans une revue
hal-01736097
v1
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Ion beam induced defects in crystalline silicon
Fuccio Cristiano
,
Nikolay Cherkashin
,
Xavier Hebras
,
P. Calvo
,
Y. Lamrani
et al.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2004, 216 (1-4), pp.46-56. ⟨10.1016/j.nimb.2003.11.019⟩
Article dans une revue
istex
hal-01736101
v1
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Capacitance study of electron traps in low-temperature-grown GaAs
P. N. Brunkov
,
A. A. Gutkin
,
A. K. Moiseenko
,
Yu. G. Musikhin
,
V. V. Chaldyshev
et al.
Article dans une revue
istex
hal-01736105
v1
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On the “Life” of {113} Defects
Nikolay Cherkashin
,
P. Calvo
,
Fuccio Cristiano
,
B. de Mauduit
,
Alain Claverie
Article dans une revue
hal-01736093
v1
|
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Thermal stability of boron electrical activation in preamorphised ultra-shallow junctions
Fuccio Cristiano
,
Nikolay Cherkashin
,
P. Calvo
,
Y. Lamrani
,
Xavier Hebras
et al.
Article dans une revue
istex
hal-01736096
v1
|
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Manipulation of two-dimensional arrays of Si nanocrystals embedded in thin SiO 2 layers by low energy ion implantation
Caroline Bonafos
,
Marzia Carrada
,
Nikolay Cherkashin
,
H. Coffin
,
D. Chassaing
et al.
Article dans une revue
hal-01736103
v1
|
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Depth dependence of defect evolution and TED during annealing
B. Colombeau
,
N.E.B. Cowern
,
Fuccio Cristiano
,
P. Calvo
,
Y. Lamrani
et al.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2004, 216, pp.90-94
Article dans une revue
hal-00140976
v1
|
|
Resonant Raman scattering of a single layer of Si nanocrystals on a silicon substrate
A. Wellner
,
Vincent Paillard
,
H. Coffin
,
Nikolay Cherkashin
,
Caroline Bonafos
Article dans une revue
hal-01736095
v1
|
|
Activation, Diffusion and Defect Analysis of a Spike Anneal Thermal Cycle
Silke Paul
,
Wilfried Lerch
,
Xavier Hebras
,
Nikolay Cherkashin
,
Fuccio Cristiano
Article dans une revue
hal-01736104
v1
|
|
Thermal evolution of {1 1 3} defects in silicon: transformation against dissolution
P. Calvo
,
Alain Claverie
,
Nikolay Cherkashin
,
B. Colombeau
,
Y. Lamrani
et al.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2004, 216 (1-4), pp.173-177. ⟨10.1016/j.nimb.2003.11.075⟩
Article dans une revue
istex
hal-01736098
v1
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Effect of nonradiative recombination centers on photoluminescence efficiency in quantum dot structures
M. V. Maksimov
,
D. S. Sizov
,
A. G. Makarov
,
I. N. Kayander
,
L. V. Asryan
et al.
Article dans une revue
istex
hal-01736102
v1
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High Ge content Si / SiGe heterostructures for microelectronics and optoelectronics purposes
Y. Bogumilowicz
,
J.M. Hartmann
,
J.F. Damlencourt
,
B. Vandelle
,
A. Abbadie
et al.
Proceedings - Electrochemical Society, 2004, 7, pp.665-679
Article dans une revue
hal-01736107
v1
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Effects of annealing conditions on charge storage of Si nanocrystal memory devices obtained by low-energy ion beam synthesis
P. Normand
,
E. Kapetanakis
,
P. Dimitrakis
,
D. Skarlatos
,
D. Tsoukalas
et al.
Article dans une revue
istex
hal-01736114
v1
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|
Control over the parameters of InAs-GaAs quantum dot arrays in the Stranski-Krastanow growth mode
Nikolay Cherkashin
,
M. V. Maksimov
,
A. G. Makarov
,
V. A. Shchukin
,
V. M. Ustinov
et al.
Article dans une revue
istex
hal-01736113
v1
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Effect of annealing environment on the memory properties of thin oxides with embedded si nanocrystals obtained by low-energy ion-beam synthesis
P. Normand
,
E. Kapetanakis
,
P. Dimitrakis
,
D. Tsoukalas
,
K. Beltsios
et al.
Article dans une revue
hal-01736112
v1
|
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Effect of ion energy and dose on the positioning of 2D-arrays of Si nanocrystals ion beam synthesised in thin SiO2 layers
Marzia Carrada
,
Nikolay Cherkashin
,
Caroline Bonafos
,
Gérard Benassayag
,
D. Chassaing
et al.
Article dans une revue
istex
hal-01736116
v1
|
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Clusters formation in ultralow-energy high-dose boron-implanted silicon
Fuccio Cristiano
,
Xavier Hebras
,
Nikolay Cherkashin
,
Alain Claverie
,
W. Lerch
et al.
Article dans une revue
hal-01736115
v1
|
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Structural and electrical properties of silicon dioxide layers with embedded germanium nanocrystals grown by molecular beam epitaxy
A. Kanjilal
,
J.L. Hansen
,
P. Gaiduk
,
A.N. Larsen
,
Nikolay Cherkashin
et al.
Article dans une revue
hal-01736109
v1
|
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Time evolution of the depth profile of {113} defects during transient enhanced diffusion in silicon
B. Colombeau
,
N.E.B. Cowern
,
Fuccio Cristiano
,
P. Calvo
,
Nikolay Cherkashin
et al.
Article dans une revue
hal-01736110
v1
|
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Polarized micro-photoluminescence spectroscopy of GaN nanocolumns
T.V. Shubina
,
V.N. Jmerik
,
S.V. Ivanov
,
D.D. Solnyshkov
,
Nikolay Cherkashin
et al.
Article dans une revue
istex
hal-01736108
v1
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Multi-Dot Floating-Gates in MOSFETs for nonvolatile memories - Their ion beam synthesis and morphology
T. Müller
,
K.-H. Heinig
,
Caroline Bonafos
,
H. Coffin
,
Nikolay Cherkashin
et al.
Article dans une revue
hal-01736111
v1
|
|
Two- and three-dimensional arrays of nanoscale as clusters in low-temperature grown GaAs
N.A. Bert
,
Nikolay Cherkashin
,
V.V. Chaldyshev
,
Alain Claverie
,
V.V. Preobrazhenskii
et al.
Article dans une revue
hal-01736118
v1
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The influence of heat treatment conditions on the evaporation of defect regions in structures with InGaAs quantum dots in the GaAs matrix
D. S. Sizov
,
M. V. Maksimov
,
A. F. Tsatsul'Nikov
,
Nikolay Cherkashin
,
N. V. Kryzhanovskaya
et al.
Article dans une revue
istex
hal-01736122
v1
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Effect of the growth parameters on the electron structure of quantum dots in InGaAs/GaAs heterostructures
A.A. Tonkikh
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V.A. Egorov
,
N.K. Polyakov
,
G.?. Tsyrlin
,
B.V. Volovik
et al.
Article dans une revue
istex
hal-01736119
v1
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Dependence of junction depth and sheet resistance on the thermal budget in the low temperature pre-stabilization regime
B. Bayha
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S. Paul
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W. Lerch
,
D.F. Downey
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E.A. Arevalo
et al.
Proceedings of the International Conference on Ion Implantation Technology, 2002, 22-27-September-2002, pp.618-621. ⟨10.1109/IIT.2002.1258081⟩
Article dans une revue
hal-01736121
v1
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Photoluminescence emission (1.3-1.4 ?m) from quantum dots heterostructures based on GaAs
V.A. Egorov
,
N.K. Polyakov
,
A.A. Tonkikh
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V.N. Petrov
,
G.E. Cirlin
et al.
Applied Surface Science, 2001, 175-176, pp.243-248
Article dans une revue
hal-01736123
v1
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Reduction of defect density in structures with InAs-GaAs quantum dots grown at low temperature for 1.55 ?m range
N.D. Zakharov
,
P. Werner
,
U. Gösele
,
N.N. Ledentsov
,
D. Bimberg
et al.
Materials Research Society Symposium - Proceedings, 2001, 672, pp.O8.5.1-O8.5.6
Article dans une revue
hal-01736124
v1
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Reversibility of the island shape, volume and density in Stranski-Krastanow growth
N N Ledentsov
,
V A Shchukin
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D Bimberg
,
V M Ustinov
,
Nikolay Cherkashin
et al.
Article dans une revue
istex
hal-01736128
v1
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InGaAs nanodomains formed in situ on the surface of (Al,Ga)As
I.L. Krestnikov
,
Nikolay Cherkashin
,
D.S. Sizov
,
D.A. Bedarev
,
I.V. Kochnev
et al.
Article dans une revue
istex
hal-01736125
v1
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Transmission electron microscopy of GaN columnar nanostructures grown by molecular beam epitaxy
V. V. Mamutin
,
Nikolay Cherkashin
,
V. A. Vekshin
,
V. N. Zhmerik
,
S. V. Ivanov
Article dans une revue
istex
hal-01736127
v1
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Optical and structural properties of self-organized InGaAsN/GaAs nanostructures
B V Volovik
,
a R Kovsh
,
W Passenberg
,
H Kuenzel
,
N Grote
et al.
Article dans une revue
istex
hal-01736129
v1
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TEM structural studies of undoped and Si-doped GaN grown on Al2O3 substrate
Nikolay Cherkashin
,
N.A. Bert
,
Yu.G. Musikhin
,
S.V. Novikov
,
T.S. Cheng
et al.
Article dans une revue
istex
hal-01736131
v1
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Thermal annealing of defects in InGaAs/GaAs heterostructures with three-dimensional islands
M.M. Sobolev
,
I.V. Kochnev
,
V.M. Lantratov
,
N.A. Bert
,
Nikolay Cherkashin
et al.
Article dans une revue
istex
hal-01736130
v1
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Influence of annealing on the formation of inGaAs quantum dots in GaAs matrix during metal organic chemical vapor deposition
Nikolay Cherkashin
,
N.A. Bert
,
N.N. Ledentsov
,
I.V. Kochnev
,
V.M. Lantratov
et al.
Proceedings of the 8th International Symposium Nanostructures: Physics and Technology, 2000, pp.117-120
Article dans une revue
hal-01736134
v1
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1.3 \mathrmμm luminescence and gain from defect-free InGaAs-GaAs quantum dots grown by metal-organic chemical vapour deposition
N N Ledentsov
,
M V Maximov
,
D Bimberg
,
T Maka
,
C M Sotomayor Torres
et al.
Article dans une revue
istex
hal-01736135
v1
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Formation of defect-free InGaAs-GaAs quantum dots for 1.3 ?m spectral range grown by metal-organic chemical vapor deposition
I.L. Krestnikov
,
N.N. Ledentsov
,
M.V. Maximov
,
D. Bimberg
,
D.A. Bedarev
et al.
Proceedings of the 8th International Symposium Nanostructures: Physics and Technology, 2000, pp.355-358
Article dans une revue
hal-01736132
v1
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Hole and electron traps in the InGaAs/GaAs heterostructures with quantum dots
M.M. Sobolev
,
I.V. Kochnev
,
V.M. Lantratov
,
Nikolay Cherkashin
,
V.V. Emtsev
Physica B: Condensed Matter, 1999, 273-274, pp.959-962
Article dans une revue
hal-01736136
v1
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