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Nikolay Cherkashin

196
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Shaping single crystalline BaTiO 3 nanostructures by focused neon or helium ion milling

I I Olaniyan , S W Schmitt , J Albert , J Garcia Fernandez , Cécile Marcelot
Nanotechnology, 2024, 35 (33), pp.335301. ⟨10.1088/1361-6528/ad4713⟩
Journal articles hal-04616424v1
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High temperature evolution of a confined silicon layer

Maëlle Le Cunff , François Rieutord , Didier Landru , Oleg Kononchuk , Nikolay Cherkashin
Journal of Applied Physics, 2024, 135 (24), ⟨10.1063/5.0205878⟩
Journal articles hal-04628219v1
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Electromechanically Coupled III-N Quantum Dots

Daniele Barettin , Alexei Sakharov , Andrey Tsatsulnikov , Andrey Nikolaev , Nikolay Cherkashin
Nanomaterials, 2023, 13 (2), pp.241. ⟨10.3390/nano13020241⟩
Journal articles hal-03924964v1
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Quantitative mapping of strain and displacement fields over HR-TEM and HR-STEM images of crystals with reference to a virtual lattice

Nikolay Cherkashin , A. Louiset , A. Chmielewski , D.J. Kim , C. Dubourdieu
Ultramicroscopy, 2023, 253, pp.113778. ⟨10.1016/j.ultramic.2023.113778⟩
Journal articles hal-04129547v1
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Impact of Local Composition on the Emission Spectra of InGaN Quantum-Dot LEDs

Daniele Barettin , Alexei V Sakharov , Andrey F Tsatsulnikov , Andrey E Nikolaev , Alessandro Pecchia
Nanomaterials, 2023, 13 (8), pp.1367. ⟨10.3390/nano13081367⟩
Journal articles hal-04085810v1
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Experimentally-Verified Modeling of InGaAs Quantum Dots

Alexander Kosarev , Vladimir Chaldyshev , Nikolay Cherkashin
Nanomaterials, 2022, 12 (12), pp.1967. ⟨10.3390/nano12121967⟩
Journal articles hal-03690840v1
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Effect of Nitrogen Doping on the Crystallization Kinetics of Ge2Sb2Te5

Minh Anh Luong , Nikolay Cherkashin , Béatrice Pécassou , Chiara Sabbione , Frédéric Mazen
Nanomaterials, 2021, 11 (7), pp.1729. ⟨10.3390/nano11071729⟩
Journal articles hal-03375510v1

Peculiarities of Epitaxial Growth of III–N LED Heterostructures on SiC/Si Substrates

Nikolay Cherkashin , A. Sakharov , A. Nikolaev , V. Lundin , S. Usov
Pis'ma v Zhurnal Tekhnicheskoi Fiziki / Technical Physics Letters, 2021, 47 (10), pp.753-756. ⟨10.1134/S106378502108006X⟩
Journal articles hal-03690810v1
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Reconstruction of depth resolved strain tensor in off-axis single crystals: Application to H + ions implanted LiTaO 3

Antonin Louiset , Sylvie Schamm-Chardon , Oleg Kononchuk , Nikolay Cherkashin
Applied Physics Letters, 2021, 118 (8), pp.082903. ⟨10.1063/5.0040729⟩
Journal articles hal-03154232v1

Metallic AsSb nanoinclusions strongly enriched by Sb in AlGaAsSb metamaterial

Nikolay Bert , Vladimir Chaldyshev , Nikolay Cherkashin , Vladimir Nevedomskiy , Valery Preobrazhenskii
Journal of Applied Physics, 2019, 125 (14), pp.145106. ⟨10.1063/1.5048076⟩
Journal articles hal-02096562v1

InGaAlP/GaAs Injection Lasers of the Orange Optical Range (~600 nm)

A. Nadtochiy , Yu. Shernyakov , M. Kulagina , A. Payusov , N. Yu. Gordeev
Fizika i tekhnika poluprovodnicov / Semiconductors, 2019, 53 (12), pp.1699-1704. ⟨10.1134/S1063782619160218⟩
Journal articles hal-02905168v1

Quantum dot 850 nm VCSELs with extreme high temperature stability operating at bit rates up to 25 Gbit/s at 150 °C

N. Ledentsov Jr. , M. Agustin , V.A. Shchukin , J.-R. Kropp , N. Ledentsov
Solid-State Electronics, 2019, 155, pp.150-158. ⟨10.1016/j.sse.2019.03.018⟩
Journal articles hal-02123597v1

Room temperature yellow InGaAlP quantum dot laser

N.N. Ledentsov , V.A. Shchukin , Yu. Shernyakov , M.M. Kulagina , A.S. Payusov
Solid-State Electronics, 2019, 155, pp.129-138. ⟨10.1016/j.sse.2019.03.009⟩
Journal articles hal-02123602v1

Compositional accuracy in atom probe tomography analyses performed on III-N light emitting diodes

Enrico Di Russo , Nikolay Cherkashin , Maxim Korytov , A. Nikolaev , A. Sakharov
Journal of Applied Physics, 2019, 126 (12), pp.124307. ⟨10.1063/1.5113799⟩
Journal articles hal-02298940v1

Sb-rich nanoinclusions in an AlGaAsSb metamaterial

Nikolay Bert , Vladimir Chaldyshev , Nikolay Cherkashin , Vladimir Nevedomskiy , Valery Preobrazhenskii
MRS Advances, 2019, pp.1-8. ⟨10.1557/adv.2019.44⟩
Journal articles hal-02086243v1
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Impact of He and H relative depth distributions on the result of sequential He+ and H+ ion implantation and annealing in silicon

Nikolay Cherkashin , Nabil Daghbouj , Grégory Seine , Alain Claverie
Journal of Applied Physics, 2018, 123 (16), pp.161556 - 161559. ⟨10.1063/1.5012505⟩
Journal articles hal-01736014v1
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Room-temperature yellow-orange (In,Ga,Al)P–GaP laser diodes grown on (n11) GaAs substrates

N. N Ledentsov , V A Shchukin , Yu M Shernyakov , M. M Kulagina , A. S Payusov
Optics Express, 2018, 26 (11), pp.13985-13994. ⟨10.1364/OE.26.013985⟩
Journal articles hal-01793971v1
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Detailed characterisation of focused ion beam induced lateral damage on silicon carbide samples by electrical scanning probe microscopy and transmission electron microscopy

F. Stumpf , A. A. Abu Quba , P. Singer , M. Rumler , Nikolay Cherkashin
Journal of Applied Physics, 2018, 123 (12), pp.125104. ⟨10.1063/1.5022558⟩
Journal articles hal-01745004v1

Morphology of GaAs crystals heterogeneously integrated on nominal (001) Si by epitaxial lateral overgrowth on tunnel oxide via Ge nano-seeding

Marie Coste , Timothée Molière , Nikolay Cherkashin , Géraldine Hallais , Laetitia Vincent
Thin Solid Films, 2018, 647, pp.13-18. ⟨10.1016/j.tsf.2017.12.015⟩
Journal articles hal-02322919v1
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A bottom-up approach for controlled deformation of carbon nanotubes through blistering of supporting substrate surface

V S Prudkovskiy , Fabrice Iacovella , K P Katin , M M Maslov , Nikolay Cherkashin
Nanotechnology, 2018, 29 (36), pp.365304. ⟨10.1088/1361-6528/aacc5d⟩
Journal articles hal-01827571v1
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A method to determine the pressure and densities of gas stored in blisters: Application to H and He sequential ion implantation in silicon

Nabil Daghbouj , Nikolay Cherkashin , Alain Claverie
Microelectronic Engineering, 2018, 190, pp.54-56. ⟨10.1016/j.mee.2018.01.006⟩
Journal articles hal-01736187v1

Influence of electromechanical coupling on optical properties of InGaN quantum-dot based light-emitting diodes

D. Barettin , M.A.D. Maur , A.D. Di Carlo , A. Pecchia , A.F. Tsatsulnikov
Nanotechnology, 2017, 28 (1), ⟨10.1088/0957-4484/28/1/015701⟩
Journal articles hal-01736015v1

Carrier transport and emission efficiency in InGaN quantum-dot based light-emitting diodes

Daniele Barettin , Matthias auf Der Maur , Aldo Di Carlo , Alessandro Pecchia , Andrei F Tsatsulnikov
Nanotechnology, 2017, 28 (27), ⟨10.1088/1361-6528/aa75a8⟩
Journal articles hal-01736017v1

(In,Ga,Al)P-GaP laser diodes grown on high-index GaAs surfaces emitting in the green, yellow and bright red spectral range

N.N. Ledentsov , V.A. Shchukin , Y.M. Shernyakov , M.M. Kulagina , A.S. Payusov
Semiconductor Science and Technology, 2017, 32 (2), ⟨10.1088/1361-6641/aa5144⟩
Journal articles hal-01736018v1
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Electron microscopy by specimen design: application to strain measurements

Nikolay Cherkashin , Thibaud Denneulin , Martin Hÿtch
Scientific Reports, 2017, 7 (1), pp.12394 - 12394. ⟨10.1038/s41598-017-12695-8⟩
Journal articles hal-01707848v1

Multi-color monolithic III-nitride light-emitting diodes: Factors controlling emission spectra and efficiency

S.Y. Karpov , Nikolay Cherkashin , Wsevolod V. Lundin , Andrey E. Nikolaev , Alexei V. Sakharov
physica status solidi (a), 2016, 213 (1), pp.19-29. ⟨10.1002/pssa.201532491⟩
Journal articles hal-01721146v1

Determination of the free gibbs energy of plate-like precipitates of hydrogen molecules and silicon vacancies formed after H+ ion implantation into silicon and annealing

Nikolay Cherkashin , François-Xavier Darras , Alain Claverie
Solid State Phenomena, 2016, 242, pp.190-195. ⟨10.4028/www.scientific.net/SSP.242.190⟩
Journal articles hal-01719486v1

Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation

V.G. Tikhomirov , V.E. Zemlyakov , V.V. Volkov , Y.M. Parnes , V.N. Vyuginov
Semiconductors, 2016, 50 (2), pp.244-248. ⟨10.1134/S1063782616020263⟩
Journal articles hal-01721147v1
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Effect of the order of He+ and H+ ion co-implantation on damage generation and thermal evolution of complexes, platelets, and blisters in silicon

Nabil Daghbouj , Nikolay Cherkashin , François-Xavier Darras , Vincent Paillard , M. Fnaiech
Journal of Applied Physics, 2016, 119 (13), pp.135308 - 245301. ⟨10.1063/1.4945032⟩
Journal articles hal-01719485v1

Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs

Andrei F. Tsatsulnikov , Wsevolod V. Lundin , Alexei V. Sakharov , E.E. Zavarin , S.O. Usov
Semiconductors, 2016, 50 (9), pp.1241-1247. ⟨10.1134/S1063782616090232⟩
Journal articles hal-01721148v1

On the origin of dislocation loops in irradiated materials: A point of view from silicon

Alain Claverie , Nikolay Cherkashin
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2016, 374, pp.82-89. ⟨10.1016/j.nimb.2015.09.011⟩
Journal articles hal-01719487v1
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High current density GaAs/Si rectifying heterojunction by defect free Epitaxial Lateral overgrowth on Tunnel Oxide from nano-seed

Charles Renard , Timothée Molière , Nikolay Cherkashin , José Alvarez , Laetitia Vincent
Scientific Reports, 2016, 6, pp.25328. ⟨10.1038/srep25328⟩
Journal articles hal-01316731v1
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Cracks and blisters formed close to a silicon wafer surface by He-H co-implantation at low energy

Nikolay Cherkashin , Nabil Daghbouj , François-Xavier Darras , M. Fnaiech , Alain Claverie
Journal of Applied Physics, 2015, 118 (24), pp.245301 - 135308. ⟨10.1063/1.4938108⟩
Journal articles hal-01719496v1
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Role of compositional fluctuations and their suppression on the strain and luminescence of InGaN alloys

Konstantinos Pantzas , Gilles Patriarche , David Troadec , Mathieu Kociak , Nikolay Cherkashin
Journal of Applied Physics, 2015, 117 (5), pp.55705. ⟨10.1063/1.4907210⟩
Journal articles hal-01721149v1

Modelling of point defect complex formation and its application to H+ ion implanted silicon

Nikolay Cherkashin , François-Xavier Darras , P. Pochet , S. Reboh , Nicolas Ratel-Ramond
Acta Materialia, 2015, 99, pp.187-195. ⟨10.1016/j.actamat.2015.07.078⟩
Journal articles hal-01736020v1
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Formation of three-dimensional islands in the active region of InGaN based light emitting diodes using a growth interruption approach

Andrei F. F Tsatsulnikov , Wsevolod V. V Lundin , Alexei V. V Sakharov , Andrey E. E Nikolaev , E.E. E Zavarin
Science of advanced materials, 2015, 7 (8), pp.1629-1635. ⟨10.1166/sam.2015.2277⟩
Journal articles hal-01721151v1

Effect of the design of the active region of monolithic multi-color LED heterostructures on their spectra and emission efficiency

Andrei F. Tsatsulnikov , Wsevolod V. Lundin , Alexei V. Sakharov , E.E. Zavarin , S.O. Usov
Semiconductors, 2015, 49 (11), pp.1516-1521. ⟨10.1134/S1063782615110238⟩
Journal articles hal-01721152v1

The effect of Ge content on the formation and evolution of 113 defects in SiGe alloys

Larbi Laânab , Amine Belafhaili , Fuccio Cristiano , Nikolay Cherkashin , Alain Claverie
physica status solidi (c), 2014, 11 (1), pp.20-23. ⟨10.1002/pssc.201300177⟩
Journal articles hal-01719497v1
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Extended Defects Formation in Nanosecond Laser-Annealed Ion Implanted Silicon

Yang Qiu , Fuccio Cristiano , Karim Huet , Fulvio Mazzamuto , Giuseppe Fisicaro
Nano Letters, 2014, 14 (4), pp.1769-1775. ⟨10.1021/nl4042438⟩
Journal articles hal-01659180v1

Quantification of the number of Si interstitials formed by hydrogen implantation in silicon using boron marker layers

François-Xavier Darras , Nikolay Cherkashin , Fuccio Cristiano , Emmanuel Scheid , Oleg Kononchuk
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2014, 327 (1), pp.29-32. ⟨10.1016/j.nimb.2013.09.045⟩
Journal articles hal-01719500v1

Dynamical effects in strain measurements by dark-field electron holography

Elsa Javon , Axel Lubk , Robin Cours , Shay Reboh , Nikolay Cherkashin
Ultramicroscopy, 2014, 147, pp.70-85. ⟨10.1016/j.ultramic.2014.06.005⟩
Journal articles hal-01721158v1

Dynamic scattering theory for dark-field electron holography of 3D strain fields

Axel Lubk , Elsa Javon , Nikolay Cherkashin , Shay Reboh , Christophe Gatel
Ultramicroscopy, 2014, 136, pp.42-49. ⟨10.1016/j.ultramic.2013.07.007⟩
Journal articles hal-01721153v1

Dependence of the efficiency of III-N blue LEDs on the structural perfection of GaN epitaxial buffer layers

Wsevolod V. Lundin , Andrey E. Nikolaev , A.V. Sakharov , S.O. Usov , E.E. Zavarin
Semiconductors, 2014, 48 (1), pp.53-57. ⟨10.1134/S1063782614010199⟩
Journal articles hal-01721154v1

Growth of high quality micrometer scale GaAs/Si crystals from (001) Si nano-areas in SiO2

Charles Renard , Nikolay Cherkashin , Alexandre Jaffré , Timothée Molière , Géraldine Hallais
Journal of Crystal Growth, 2014, 401, pp.554-558. ⟨10.1016/j.jcrysgro.2014.01.065⟩
Journal articles hal-01721160v1
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Local stress-induced effects on AlGaAs/AlOx oxidation front shape

Fares Chouchane , Guilhem Almuneau , Nikolay Cherkashin , Alexandre Arnoult , Guy Lacoste
Applied Physics Letters, 2014, 105 (4), pp.41909 - 41909. ⟨10.1063/1.4892094⟩
Journal articles hal-01721161v1
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X-ray determination of threading dislocation densities in GaN/Al2O3(0001) films grown by metalorganic vapor phase epitaxy

Viktor S. Kopp , Vladimir M. Kaganer , Marina V. Baidakova , Wsevolod V. Lundin , Andrey E. Nikolaev
Journal of Applied Physics, 2014, 115 (7), pp.073507. ⟨10.1063/1.4865502⟩
Journal articles hal-01721159v1

Local strain measurements at dislocations, disclinations and domain boundaries

Martin Hÿtch , Christophe Gatel , Axel Lubk , Thibaud Denneulin , Lise Durand
Microscopy and Microanalysis, 2014, 20 (3), pp.1044-1045. ⟨10.1017/S1431927614006941⟩
Journal articles hal-01721157v1
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Nanoscale organization by elastic interactions between H and He platelets in Si

Shay Reboh , J-F. Barbot , Maxime Vallet , M.F. Beaufort , F. Rieutord
Journal of Applied Physics, 2013, 114 (7), pp.073517. ⟨10.1063/1.4818812⟩
Journal articles hal-01736021v1
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Effect of H-implantation in the local elastic properties of silicon crystals

Shay Reboh , F. Rieutord , L. Vignoud , F. Mazen , Nikolay Cherkashin
Applied Physics Letters, 2013, 103 (18), pp.181911. ⟨10.1063/1.4828659⟩
Journal articles hal-01736023v1

Influence of the Germanium content on the amorphization of silicon-germanium alloys during ion implantation

A. Belafhaili , L. Laânab , Fuccio Cristiano , Nikolay Cherkashin , Alain Claverie
Materials Science in Semiconductor Processing, 2013, 16 (6), pp.1655-1658. ⟨10.1016/j.mssp.2013.04.014⟩
Journal articles hal-01736024v1

Dislocation and antiphase domain free microscale GaAs crystals grown on SiO2 from (001) Si nano-areas

Charles Renard , Nikolay Cherkashin , Alexandre Jaffré , Laetitia Vincent , A. Michel
Applied Physics Letters, 2013, 102 (19), pp.191915 - 191915-4. ⟨10.1063/1.4807386⟩
Journal articles hal-00931275v1

Strain in hydrogen-implanted si investigated using dark-field electron holography

Nikolay Cherkashin , Shay Reboh , Axel Lubk , Martin Hÿtch , Alain Claverie
Applied Physics Express, 2013, 6 (9), ⟨10.7567/APEX.6.091301⟩
Journal articles hal-01736022v1
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Determination of stress, strain, and elemental distribution within In(Ga)As quantum dots embedded in GaAs using advanced transmission electron microscopy

Nikolay Cherkashin , Shay Reboh , Martin Hÿtch , Alain Claverie , V.V. Preobrazhenskii
Applied Physics Letters, 2013, 102 (17), pp.173115. ⟨10.1063/1.4804380⟩
Journal articles hal-01736028v1

Composition and local strain mapping in Au-catalyzed axial Si/Ge nanowires

L. Vincent , R. Boukhicha , Nikolay Cherkashin , Shay Reboh , G. Patriarche
Nanotechnology, 2012, 23 (39), ⟨10.1088/0957-4484/23/39/395701⟩
Journal articles hal-01736036v1

Application of the O-lattice theory for the reconstruction of the high-angle near 90? tilt Si(1 1 0)/(0 0 1) boundary created by wafer bonding

Nikolay Cherkashin , O. Kononchuk , Shay Reboh , Martin Hÿtch
Acta Materialia, 2012, 60 (3), pp.1161-1173. ⟨10.1016/j.actamat.2011.10.054⟩
Journal articles hal-01736034v1

Nanoscale concentration and strain distribution in pseudomorphic films Si1−xGex/Si processed by pulsed laser induced epitaxy

L. Vincent , F. Fossard , T. Kociniewski , L. Largeau , Nikolay Cherkashin
Applied Surface Science, 2012, 258 (23), pp.9208-9212. ⟨10.1016/j.apsusc.2011.07.074⟩
Journal articles hal-01736031v1

InGaN/GaN heterostructures grown by submonolayer deposition

A.F. Tsatsulnikov , W.V. Lundin , E.E. Zavarin , A.V. Sakharov , Y.G. Musikhin
Semiconductors, 2012, 46 (10), pp.1335-1340. ⟨10.1134/S106378261210017X⟩
Journal articles hal-01736029v1

Composite InGaN/GaN/InAlN heterostructures emitting in the yellow-red spectral region

A.F. Tsatsulnikov , W.V. Lundin , E.E. Zavarin , A.E. Nikolaev , A.V. Sakharov
Semiconductors, 2012, 46 (10), pp.1281-1285. ⟨10.1134/S1063782612100168⟩
Journal articles hal-01736035v1
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Confinement of vacancies during annealing of H implanted GaN sandwiched between two {InGaN/GaN} superlattices

Nikolay Cherkashin , Alain Claverie , D. Sotta , J.-M. Bethoux , L. Capello
Applied Physics Letters, 2012, 101 (2), pp.023105. ⟨10.1063/1.4733619⟩
Journal articles hal-01736033v1

Monolithic white LEDs: Approaches, technology, design

V.M. Ustinov , A.F. Tsatsulnikov , V.V. Lundin , A.V. Sakharov , A.E. Nikolaev
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques, 2012, 6 (3), pp.501-504. ⟨10.1134/S1027451012060237⟩
Journal articles hal-01736030v1

Effect of stimulated phase separation on properties of blue, green and monolithic white LEDs

A.F. Tsatsulnikov , W.V. Lundin , A.V. Sakharov , E.E. Zavarin , S.O. Usov
physica status solidi (c), 2012, 9 (3-4), pp.774-777. ⟨10.1002/pssc.201100339⟩
Journal articles hal-01736032v1

InGaN/GaN short-period superlattices: synthesis, properties, applications

A. F. Tsatsulnikov , W. V. Lundin , A. V. Sakharov , E. E. Zavarin , S. O. Usov
physica status solidi (c), 2011, 8 (7-8), pp.2308--2310. ⟨10.1002/pssc.201001040⟩
Journal articles hal-01736040v1

Strain mapping in layers and devices by electron holography

Martin Hÿtch , Nikolay Cherkashin , Shay Reboh , Florent Houdellier , Alain Claverie
physica status solidi (a), 2011, 208 (3), pp.580-583. ⟨10.1002/pssa.201000281⟩
Journal articles hal-01736038v1

Specific features of depth distribution profiles of implanted cobalt ions in rutile TiO 2

A.A. Achkeev , R.I. Khaibullin , L.R. Tagirov , A. Mackova , V. Hnatowicz
Physics of the Solid State, 2011, 53 (3), pp.543-553. ⟨10.1134/S1063783411030024⟩
Journal articles hal-01736037v1

Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice

W.V. Lundin , A.E. Nikolaev , A.V. Sakharov , E.E. Zavarin , G.A. Valkovskiy
Journal of Crystal Growth, 2011, 315 (1), pp.267--271. ⟨10.1016/j.jcrysgro.2010.09.043⟩
Journal articles hal-01736042v1

Reconstruction of a high angle tilt (110)/(001) boundary in Si using O-lattice theory

Nikolay Cherkashin , O. Kononchuk , Martin Hÿtch
Solid State Phenomena, 2011, 178-179, pp.489-494. ⟨10.4028/www.scientific.net/SSP.178-179.489⟩
Journal articles hal-01736039v1

Effect of pressure in the growth reactor on the properties of the active region in the InGaN/GaN light-emitting diodes

W.V. Lundin , E.E. Zavarin , M.A. Sinitsyn , A.V. Sakharov , S.O. Usov
Semiconductors, 2010, 44 (1), pp.123-126. ⟨10.1134/S1063782610010215⟩
Journal articles hal-01736044v1

Formation of composite InGaN/GaN/InAlN quantum dots

A.F. Tsatsul'Nikov , E.E. Zavarin , N.V. Kryzhanovskaya , W.V. Lundin , A.V. Saharov
Semiconductors, 2010, 44 (10), pp.1338-1341. ⟨10.1134/S1063782610100167⟩
Journal articles hal-01736045v1

Fabrication, structural and electrical properties of compressively strained Ge-on-insulator substrates.

M. Hartmann , L. Sanchez , W. van den Daele , A. Abadie , L. Baud
Semiconductor Science & Technology, 2010, 25, pp.075010
Journal articles hal-00596336v1

Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes

A.F. Tsatsulnikov , W.V. Lundin , A.V. Sakharov , E.E. Zavarin , S.O. Usov
Semiconductors, 2010, 44 (1), pp.93-97. ⟨10.1134/S1063782610010161⟩
Journal articles hal-01736052v1
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On the microstructure of Si coimplanted with H+ and He + ions at moderate energies

Shay Reboh , F. Schaurich , A. Declemy , J-F. Barbot , M.F. Beaufort
Journal of Applied Physics, 2010, 108 (2), pp.023502. ⟨10.1063/1.3459884⟩
Journal articles hal-01736048v1

Amorphization, recrystallization and end of range defects in germanium

Alain Claverie , S. Koffel , Nikolay Cherkashin , Gérard Benassayag , P. Scheiblin
Thin Solid Films, 2010, 518 (9), pp.2307--2313. ⟨10.1016/j.tsf.2009.09.162⟩
Journal articles hal-01736049v1
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Controlled drive-in and precipitation of hydrogen during plasma hydrogenation of silicon using a thin compressively strained SiGe layer

F. Okba , Nikolay Cherkashin , Z. Di , M. Nastasi , F. Rossi
Applied Physics Letters, 2010, 97 (3), pp.31917-31917. ⟨10.1063/1.3467455⟩
Journal articles hal-01736050v1

The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes

V.S. Sizov , A.F. Tsatsulnikov , A.V. Sakharov , W.V. Lundin , E.E. Zavarin
Semiconductors, 2010, 44 (7), pp.924-930. ⟨10.1134/S106378261007016X⟩
Journal articles hal-01736047v1

Cyclic Deposition / Etch processes for the formation of Si raised sources and drains in advanced MOSFETs

J.M. Hartmann , M. Py , P.H. Morel , T. Ernst , B. Prévitali
ECS Transactions, 2010, 33 (6), pp.391-407. ⟨10.1149/1.3487570⟩
Journal articles hal-01736046v1
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Modeling and experiments on diffusion and activation of phosphorus in germanium

P. Tsouroutas , D. Tsoukalas , I. Zergioti , Nikolay Cherkashin , Alain Claverie
Journal of Applied Physics, 2009, 105 (9), pp.094910. ⟨10.1063/1.3117485⟩
Journal articles hal-01736053v1

Epitaxial growth of Ge thick layers on nominal and 6° off Si(0 0 1)\mathsemicolon Ge surface passivation by Si

J M Hartmann , A Abbadie , Nikolay Cherkashin , H Grampeix , L Clavelier
Semiconductor Science and Technology, 2009, 24 (5), pp.055002. ⟨10.1088/0268-1242/24/5/055002⟩
Journal articles hal-01736056v1
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On the influence of elastic strain on the accommodation of carbon atoms into substitutional sites in strained Si:C layers grown on Si substrates

Nikolay Cherkashin , Martin Hÿtch , Florent Houdellier , Florian Hüe , Vincent Paillard
Applied Physics Letters, 2009, 94 (14), pp.141910. ⟨10.1063/1.3116648⟩
Journal articles hal-00417300v1
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End of range defects in Ge

S. Koffel , Nikolay Cherkashin , Florent Houdellier , Martin Hÿtch , Gérard Benassayag
Journal of Applied Physics, 2009, 105, pp.126110. ⟨10.1063/1.3153985⟩
Journal articles hal-01736054v1

Effect of strain relaxation on active-region formation in InGaN/(Al)GaN heterostructures for green LEDs

A.V. Sakharov , W.V. Lundin , E.E. Zavarin , M.A. Sinitsyn , A.E. Nikolaev
Semiconductors, 2009, 43 (6), pp.812-817. ⟨10.1134/S1063782609060232⟩
Journal articles hal-01736055v1

Diffusion and activation of phosphorus in germanium

P. Tsouroutas , D. Tsoukalas , I. Zergioti , Nikolay Cherkashin , Alain Claverie
Materials Science in Semiconductor Processing, 2008, 11 (5-6), pp.372--377. ⟨10.1016/j.mssp.2008.09.005⟩
Journal articles hal-01736063v1
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Splitting kinetics of Si$_{0.8}$Ge$_{0.2}$ layers implanted with H or sequentially with He and H

P. Nguyen , K.K. Bourdelle , C. Aulnette , F. Lallement , N. Daix
Journal of Applied Physics, 2008, 104, pp.113526. ⟨10.1063/1.3033555⟩
Journal articles hal-01736059v1
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Formation and evolution of F nanobubbles in amorphous and crystalline Si

S. Boninelli , G. Impellizzeri , S. Mirabella , F. Priolo , E. Napolitani
Applied Physics Letters, 2008, 93 (6), pp.61906 - 171916. ⟨10.1063/1.2969055⟩
Journal articles hal-01736061v1

Reduced Pressure-Chemical Vapour Deposition of Si/SiGe heterostructures for nanoelectronics

J.M. Hartmann , F. Andrieu , D. Lafond , T. Ernst , Y. Bogumilowicz
Materials Science and Engineering: B, 2008, 154-155 (1-3), pp.76-84. ⟨10.1016/j.mseb.2008.08.009⟩
Journal articles hal-01736060v1

Imaging Si nanoparticles embedded in SiO2 layers by (S)TEM-EELS

Sylvie Schamm-Chardon , Caroline Bonafos , H. Coffin , Nikolay Cherkashin , Marzia Carrada
Ultramicroscopy, 2008, 108 (4), pp.346--357. ⟨10.1016/j.ultramic.2007.05.008⟩
Journal articles hal-01736064v1
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Impact of the transient formation of molecular hydrogen on the microcrack nucleation and evolution in H-implanted Si (001)

S. Personnic , K.K. Bourdelle , F. Letertre , A. Tauzin , Nikolay Cherkashin
Journal of Applied Physics, 2008, 103 (2), pp.23508-1 - 23508-9. ⟨10.1063/1.2829807⟩
Journal articles hal-01736058v1

Comparison of platelet formation in hydrogen and helium-implanted silicon

Xavier Hebras , P. Nguyen , K.K. Bourdelle , F. Letertre , Nikolay Cherkashin
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2007, 262 (1), pp.24-28. ⟨10.1016/j.nimb.2007.04.158⟩
Journal articles hal-01736070v1
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Wet oxidation of nitride layer implanted with low-energy Si ions for improved oxide-nitride-oxide memory stacks

V. Ioannou-Sougleridis , P. Dimitrakis , V.Em. Vamvakas , P. Normand , Caroline Bonafos
Applied Physics Letters, 2007, 90 (26), pp.263513. ⟨10.1063/1.2752769⟩
Journal articles hal-01736066v1
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Influence of the initial supersaturation of solute atoms on the size of nanoparticles grown by an Ostwald ripening mechanism

Nikolay Cherkashin , Alain Claverie , Caroline Bonafos , V.V. Chaldyshev , N.A. Bert
Journal of Applied Physics, 2007, 102 (2), pp.023520. ⟨10.1063/1.2749303⟩
Journal articles hal-01736067v1

Oxide-nitride-oxide memory stacks formed by low-energy Si ion implantation into nitride and wet oxidation

V. Ioannou-Sougleridis , P. Dimitrakis , V.Em. Vamvakas , P. Normand , Caroline Bonafos
Microelectronic Engineering, 2007, 84 (9-10), pp.1986--1989. ⟨10.1016/j.mee.2007.04.068⟩
Journal articles hal-01736069v1

Materials science issues for the fabrication of nanocrystal memory devices by ultra low energy ion implantation

Alain Claverie , Caroline Bonafos , Gérard Benassayag , Sylvie Schamm-Chardon , Nikolay Cherkashin
Defect Diffus. Forum, 2006, 258-260, pp.531-541
Journal articles hal-00204809v1
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Evidences of an intermediate rodlike defect during the transformation of {113} defects into dislocation loops

S. Boninelli , Nikolay Cherkashin , Alain Claverie , Fuccio Cristiano
Applied Physics Letters, 2006, 89 (16), pp.161904. ⟨10.1063/1.2361178⟩
Journal articles hal-01736076v1

Defects evolution and dopant activation anomalies in ion implanted silicon

Fuccio Cristiano , Y. Lamrani , F. Severac , M. Gavelle , S. Boninelli
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2006, 253 (1-2), pp.68-79. ⟨10.1016/j.nimb.2006.10.046⟩
Journal articles hal-01736079v1

Transformation of {1 1 3} defects into dislocation loops mediated by the {1 1 1} rod-like defects

S. Boninelli , Nikolay Cherkashin , Alain Claverie , Fuccio Cristiano
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2006, 253 (1-2), pp.80-84. ⟨10.1016/j.nimb.2006.10.019⟩
Journal articles hal-01736073v1

Synthesis of mono and bi-layer of Si nanocrystals embedded in a dielectric matrix by e-beam evaporation of SiO/SiO2 thin films

M. Perego , M. Fanciulli , Caroline Bonafos , Nikolay Cherkashin
Materials Science and Engineering: C, 2006, 26 (5-7), pp.835--839. ⟨10.1016/j.msec.2005.09.058⟩
Journal articles hal-01736077v1
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Oxidation of Si nanocrystals fabricated by ultralow-energy ion implantation in thin SiO2 layers

H. Coffin , Caroline Bonafos , Sylvie Schamm-Chardon , Nikolay Cherkashin , Gérard Benassayag
Journal of Applied Physics, 2006, 99 (4), pp.044302. ⟨10.1063/1.2171785⟩
Journal articles hal-01736074v1

Laser annealing for n+/p junction formation in germanium

P. Tsouroutas , D. Tsoukalas , A. Florakis , I. Zergioti , A.A. Serafetinides
Materials Science in Semiconductor Processing, 2006, 9 (4-5), pp.644--649. ⟨10.1016/j.mssp.2006.08.013⟩
Journal articles hal-01736078v1

Quantitative local strain measurements in compressive strained Ge/tensile strained Si bi-layers grown on top of relaxed Si0.5Ge0.5 virtual substrates

Nikolay Cherkashin , Martin Hÿtch , Etienne Snoeck , Florian Hüe , J.M. Hartmann
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2006, 253 (1-2), pp.145-148. ⟨10.1016/j.nimb.2006.10.051⟩
Journal articles hal-01736071v1

Si nanocrystals by ultra-low-energy ion beam-synthesis for non-volatile memory applications

Caroline Bonafos , H. Coffin , Sylvie Schamm-Chardon , Nikolay Cherkashin , Gérard Benassayag
Solid-State Electronics, 2005, 49 (11), pp.1734--1744. ⟨10.1016/j.sse.2005.10.001⟩
Journal articles hal-01736088v1

Quantitative strain and stress measurements in Ge/Si dual channels grown on a Si0.5Ge0.5 virtual substrate

Nikolay Cherkashin , Martin Hÿtch , Etienne Snoeck , Alain Claverie , J.M. Hartmann
Materials Science and Engineering: B, 2005, 124-125, pp.118--122. ⟨10.1016/j.mseb.2005.08.054⟩
Journal articles hal-01736084v1

Structure determination of clusters formed in ultra-low energy high-dose implanted silicon

Nikolay Cherkashin , Martin Hÿtch , Fuccio Cristiano , Alain Claverie
Solid State Phenomena, 2005, 108-109, pp.303-308. ⟨10.4028/www.scientific.net/SSP.108-109.303⟩
Journal articles hal-01736085v1

High germanium content SiGe virtual substrates grown at high temperatures

Y. Bogumilowicz , J.M. Hartmann , F. Laugier , G. Rolland , T. Billon
Journal of Crystal Growth, 2005, 283 (3-4), pp.346--355. ⟨10.1016/j.jcrysgro.2005.06.036⟩
Journal articles hal-01736086v1

Deactivation of Solid Phase Epitaxy-Activated Boron Ultrashallow Junctions

W. Lerch , S. Paul , J. Niess , Fuccio Cristiano , Y. Lamrani
Journal of The Electrochemical Society, 2005, 152 (10), pp.G787. ⟨10.1149/1.2018176⟩
Journal articles hal-01736089v1

SiGe virtual substrates growth up to 50% Ge concentration for Si/Ge dual channel epitaxy

Y. Bogumilowicz , J.M. Hartmann , Nikolay Cherkashin , Alain Claverie , G. Rolland
Materials Science and Engineering: B, 2005, 124-125 (SUPPL.), pp.113-117. ⟨10.1016/j.mseb.2005.08.052⟩
Journal articles hal-01736080v1

Si nanocrystals by ultra-low energy ion implantation for non-volatile memory applications

H. Coffin , Caroline Bonafos , Sylvie Schamm-Chardon , Marzia Carrada , Nikolay Cherkashin
Materials Science and Engineering: B, 2005, 124-125, pp.499--503. ⟨10.1016/j.mseb.2005.08.129⟩
Journal articles hal-01736081v1
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Fabrication of nanocrystal memories by ultra low energy ion implantation

Nikolay Cherkashin , Caroline Bonafos , H. Coffin , Marzia Carrada , Sylvie Schamm-Chardon
physica status solidi (c), 2005, 2 (6), pp.1907--1911. ⟨10.1002/pssc.200460523⟩
Journal articles hal-01736090v1

Size and aerial density distributions of Ge nanocrystals in a SiO 2 layer produced by molecular beam epitaxy and rapid thermal processing

A. Kanjilal , J.L. Hansen , P. Gaiduk , A.N. Larsen , P. Normand
Applied physics. A, Materials science & processing, 2005, 81 (2), pp.363-366. ⟨10.1007/s00339-004-2924-3⟩
Journal articles hal-01736082v1

On the “Life” of {113} Defects

Nikolay Cherkashin , P. Calvo , Fuccio Cristiano , B. de Mauduit , Alain Claverie
MRS Proceedings, 2004, 810, pp.103-108. ⟨10.1557/PROC-810-C3.7⟩
Journal articles hal-01736093v1

Ion beam induced defects in crystalline silicon

Fuccio Cristiano , Nikolay Cherkashin , Xavier Hebras , P. Calvo , Y. Lamrani
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2004, 216 (1-4), pp.46-56. ⟨10.1016/j.nimb.2003.11.019⟩
Journal articles hal-01736101v1

Capacitance study of electron traps in low-temperature-grown GaAs

P. N. Brunkov , A. A. Gutkin , A. K. Moiseenko , Yu. G. Musikhin , V. V. Chaldyshev
Semiconductors, 2004, 38 (4), pp.387--392. ⟨10.1134/1.1734663⟩
Journal articles hal-01736105v1
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Resonant Raman scattering of a single layer of Si nanocrystals on a silicon substrate

A. Wellner , Vincent Paillard , H. Coffin , Nikolay Cherkashin , Caroline Bonafos
Journal of Applied Physics, 2004, 96 (4), pp.2403-2405. ⟨10.1063/1.1765853⟩
Journal articles hal-01736095v1

Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications

P. Normand , E. Kapetanakis , P. Dimitrakis , D. Skarlatos , K. Beltsios
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2004, 216 (1-4), pp.228-238. ⟨10.1016/j.nimb.2003.11.039⟩
Journal articles hal-01736094v1

Depth dependence of defect evolution and TED during annealing

B. Colombeau , N.E.B. Cowern , Fuccio Cristiano , P. Calvo , Y. Lamrani
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2004, 216, pp.90-94
Journal articles hal-00140976v1
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Manipulation of two-dimensional arrays of Si nanocrystals embedded in thin SiO 2 layers by low energy ion implantation

Caroline Bonafos , Marzia Carrada , Nikolay Cherkashin , H. Coffin , D. Chassaing
Journal of Applied Physics, 2004, 95 (10), pp.5696-5702. ⟨10.1063/1.1695594⟩
Journal articles hal-01736103v1

Thermal stability of boron electrical activation in preamorphised ultra-shallow junctions

Fuccio Cristiano , Nikolay Cherkashin , P. Calvo , Y. Lamrani , Xavier Hebras
Materials Science and Engineering: B, 2004, 114-115 (SPEC. ISS.), pp.174-179. ⟨10.1016/j.mseb.2004.07.049⟩
Journal articles hal-01736096v1

High Ge content Si / SiGe heterostructures for microelectronics and optoelectronics purposes

Y. Bogumilowicz , J.M. Hartmann , J.F. Damlencourt , B. Vandelle , A. Abbadie
Proceedings - Electrochemical Society, 2004, 7, pp.665-679
Journal articles hal-01736107v1

Effect of nonradiative recombination centers on photoluminescence efficiency in quantum dot structures

M. V. Maksimov , D. S. Sizov , A. G. Makarov , I. N. Kayander , L. V. Asryan
Semiconductors, 2004, 38 (10), pp.1207--1211. ⟨10.1134/1.1808830⟩
Journal articles hal-01736102v1
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Multi-dot floating-gates for nonvolatile semiconductor memories: Their ion beam synthesis and morphology

T. Müller , K.-H. Heinig , W. Möller , Caroline Bonafos , H. Coffin
Applied Physics Letters, 2004, 85 (12), pp.2373-2375
Journal articles hal-01736097v1

Activation, Diffusion and Defect Analysis of a Spike Anneal Thermal Cycle

Silke Paul , Wilfried Lerch , Xavier Hebras , Nikolay Cherkashin , Fuccio Cristiano
MRS Proceedings, 2004, 810, ⟨10.1557/proc-810-c5.4⟩
Journal articles hal-01736104v1

Thermal evolution of {1 1 3} defects in silicon: transformation against dissolution

P. Calvo , Alain Claverie , Nikolay Cherkashin , B. Colombeau , Y. Lamrani
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2004, 216 (1-4), pp.173-177. ⟨10.1016/j.nimb.2003.11.075⟩
Journal articles hal-01736098v1

Effects of annealing conditions on charge storage of Si nanocrystal memory devices obtained by low-energy ion beam synthesis

P. Normand , E. Kapetanakis , P. Dimitrakis , D. Skarlatos , D. Tsoukalas
Microelectronic Engineering, 2003, 67-68, pp.629-634. ⟨10.1016/S0167-9317(03)00124-2⟩
Journal articles hal-01736114v1

Effect of ion energy and dose on the positioning of 2D-arrays of Si nanocrystals ion beam synthesised in thin SiO2 layers

Marzia Carrada , Nikolay Cherkashin , Caroline Bonafos , Gérard Benassayag , D. Chassaing
Materials Science and Engineering: B, 2003, 101 (1-3), pp.204-207. ⟨10.1016/S0921-5107(02)00724-9⟩
Journal articles hal-01736116v1

Polarized micro-photoluminescence spectroscopy of GaN nanocolumns

T.V. Shubina , V.N. Jmerik , S.V. Ivanov , D.D. Solnyshkov , Nikolay Cherkashin
physica status solidi (c), 2003, 7, pp.2602-2605. ⟨10.1002/pssc.200303330⟩
Journal articles hal-01736108v1

Multi-Dot Floating-Gates in MOSFETs for nonvolatile memories - Their ion beam synthesis and morphology

T. Müller , K.-H. Heinig , Caroline Bonafos , H. Coffin , Nikolay Cherkashin
Materials Research Society Symposium - Proceedings, 2003, 792, pp.333-338. ⟨10.1557/PROC-792-R8.7⟩
Journal articles hal-01736111v1
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Time evolution of the depth profile of {113} defects during transient enhanced diffusion in silicon

B. Colombeau , N.E.B. Cowern , Fuccio Cristiano , P. Calvo , Nikolay Cherkashin
Applied Physics Letters, 2003, 83 (10), pp.1953-1955. ⟨10.1063/1.1608489⟩
Journal articles hal-01736110v1
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Effect of annealing environment on the memory properties of thin oxides with embedded si nanocrystals obtained by low-energy ion-beam synthesis

P. Normand , E. Kapetanakis , P. Dimitrakis , D. Tsoukalas ,