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Nikolay Cherkashin

194
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Impact of Local Composition on the Emission Spectra of InGaN Quantum-Dot LEDs

Daniele Barettin , Alexei V Sakharov , Andrey F Tsatsulnikov , Andrey E Nikolaev , Alessandro Pecchia
Nanomaterials, 2023, 13 (8), pp.1367. ⟨10.3390/nano13081367⟩
Article dans une revue hal-04085810v1
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Quantitative mapping of strain and displacement fields over HR-TEM and HR-STEM images of crystals with reference to a virtual lattice

Nikolay Cherkashin , A. Louiset , A. Chmielewski , D.J. Kim , C. Dubourdieu
Ultramicroscopy, 2023, 253, pp.113778. ⟨10.1016/j.ultramic.2023.113778⟩
Article dans une revue hal-04129547v1
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Electromechanically Coupled III-N Quantum Dots

Daniele Barettin , Alexei Sakharov , Andrey Tsatsulnikov , Andrey Nikolaev , Nikolay Cherkashin
Nanomaterials, 2023, 13 (2), pp.241. ⟨10.3390/nano13020241⟩
Article dans une revue hal-03924964v1
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Experimentally-Verified Modeling of InGaAs Quantum Dots

Alexander Kosarev , Vladimir Chaldyshev , Nikolay Cherkashin
Nanomaterials, 2022, 12 (12), pp.1967. ⟨10.3390/nano12121967⟩
Article dans une revue hal-03690840v1
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Effect of Nitrogen Doping on the Crystallization Kinetics of Ge2Sb2Te5

Minh Anh Luong , Nikolay Cherkashin , Béatrice Pécassou , Chiara Sabbione , Frédéric Mazen
Nanomaterials, 2021, 11 (7), pp.1729. ⟨10.3390/nano11071729⟩
Article dans une revue hal-03375510v1

Peculiarities of Epitaxial Growth of III–N LED Heterostructures on SiC/Si Substrates

Nikolay Cherkashin , A. Sakharov , A. Nikolaev , V. Lundin , S. Usov
Pis'ma v Zhurnal Tekhnicheskoi Fiziki / Technical Physics Letters, 2021, 47 (10), pp.753-756. ⟨10.1134/S106378502108006X⟩
Article dans une revue hal-03690810v1
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Reconstruction of depth resolved strain tensor in off-axis single crystals: Application to H + ions implanted LiTaO 3

Antonin Louiset , Sylvie Schamm-Chardon , Oleg Kononchuk , Nikolay Cherkashin
Applied Physics Letters, 2021, 118 (8), pp.082903. ⟨10.1063/5.0040729⟩
Article dans une revue hal-03154232v1

Metallic AsSb nanoinclusions strongly enriched by Sb in AlGaAsSb metamaterial

Nikolay Bert , Vladimir Chaldyshev , Nikolay Cherkashin , Vladimir Nevedomskiy , Valery Preobrazhenskii
Journal of Applied Physics, 2019, 125 (14), pp.145106. ⟨10.1063/1.5048076⟩
Article dans une revue hal-02096562v1

Room temperature yellow InGaAlP quantum dot laser

N.N. Ledentsov , V.A. Shchukin , Yu. Shernyakov , M.M. Kulagina , A.S. Payusov
Solid-State Electronics, 2019, 155, pp.129-138. ⟨10.1016/j.sse.2019.03.009⟩
Article dans une revue hal-02123602v1

Quantum dot 850 nm VCSELs with extreme high temperature stability operating at bit rates up to 25 Gbit/s at 150 °C

N. Ledentsov Jr. , M. Agustin , V.A. Shchukin , J.-R. Kropp , N. Ledentsov
Solid-State Electronics, 2019, 155, pp.150-158. ⟨10.1016/j.sse.2019.03.018⟩
Article dans une revue hal-02123597v1

Compositional accuracy in atom probe tomography analyses performed on III-N light emitting diodes

Enrico Di Russo , Nikolay Cherkashin , Maxim Korytov , A. Nikolaev , A. Sakharov
Journal of Applied Physics, 2019, 126 (12), pp.124307. ⟨10.1063/1.5113799⟩
Article dans une revue hal-02298940v1

Sb-rich nanoinclusions in an AlGaAsSb metamaterial

Nikolay Bert , Vladimir Chaldyshev , Nikolay Cherkashin , Vladimir Nevedomskiy , Valery Preobrazhenskii
MRS Advances, 2019, pp.1-8. ⟨10.1557/adv.2019.44⟩
Article dans une revue hal-02086243v1

InGaAlP/GaAs Injection Lasers of the Orange Optical Range (~600 nm)

A. Nadtochiy , Yu. Shernyakov , M. Kulagina , A. Payusov , N. Yu. Gordeev
Fizika i tekhnika poluprovodnicov / Semiconductors, 2019, 53 (12), pp.1699-1704. ⟨10.1134/S1063782619160218⟩
Article dans une revue hal-02905168v1
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Impact of He and H relative depth distributions on the result of sequential He+ and H+ ion implantation and annealing in silicon

Nikolay Cherkashin , Nabil Daghbouj , Grégory Seine , Alain Claverie
Journal of Applied Physics, 2018, 123 (16), pp.161556 - 161559. ⟨10.1063/1.5012505⟩
Article dans une revue hal-01736014v1
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Room-temperature yellow-orange (In,Ga,Al)P–GaP laser diodes grown on (n11) GaAs substrates

N. N Ledentsov , V A Shchukin , Yu M Shernyakov , M. M Kulagina , A. S Payusov
Optics Express, 2018, 26 (11), pp.13985-13994. ⟨10.1364/OE.26.013985⟩
Article dans une revue hal-01793971v1

Morphology of GaAs crystals heterogeneously integrated on nominal (001) Si by epitaxial lateral overgrowth on tunnel oxide via Ge nano-seeding

Marie Coste , Timothée Molière , Nikolay Cherkashin , Géraldine Hallais , Laetitia Vincent
Thin Solid Films, 2018, 647, pp.13-18. ⟨10.1016/j.tsf.2017.12.015⟩
Article dans une revue hal-02322919v1
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Detailed characterisation of focused ion beam induced lateral damage on silicon carbide samples by electrical scanning probe microscopy and transmission electron microscopy

F. Stumpf , A. A. Abu Quba , P. Singer , M. Rumler , Nikolay Cherkashin
Journal of Applied Physics, 2018, 123 (12), pp.125104. ⟨10.1063/1.5022558⟩
Article dans une revue hal-01745004v1
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A method to determine the pressure and densities of gas stored in blisters: Application to H and He sequential ion implantation in silicon

Nabil Daghbouj , Nikolay Cherkashin , Alain Claverie
Microelectronic Engineering, 2018, 190, pp.54-56. ⟨10.1016/j.mee.2018.01.006⟩
Article dans une revue hal-01736187v1
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A bottom-up approach for controlled deformation of carbon nanotubes through blistering of supporting substrate surface

V S Prudkovskiy , Fabrice Iacovella , K P Katin , M M Maslov , Nikolay Cherkashin
Nanotechnology, 2018, 29 (36), pp.365304. ⟨10.1088/1361-6528/aacc5d⟩
Article dans une revue hal-01827571v1

(In,Ga,Al)P-GaP laser diodes grown on high-index GaAs surfaces emitting in the green, yellow and bright red spectral range

N.N. Ledentsov , V.A. Shchukin , Y.M. Shernyakov , M.M. Kulagina , A.S. Payusov
Semiconductor Science and Technology, 2017, 32 (2), ⟨10.1088/1361-6641/aa5144⟩
Article dans une revue hal-01736018v1

Carrier transport and emission efficiency in InGaN quantum-dot based light-emitting diodes

Daniele Barettin , Matthias auf Der Maur , Aldo Di Carlo , Alessandro Pecchia , Andrei F Tsatsulnikov
Nanotechnology, 2017, 28 (27), ⟨10.1088/1361-6528/aa75a8⟩
Article dans une revue hal-01736017v1
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Electron microscopy by specimen design: application to strain measurements

Nikolay Cherkashin , Thibaud Denneulin , Martin Hÿtch
Scientific Reports, 2017, 7 (1), pp.12394 - 12394. ⟨10.1038/s41598-017-12695-8⟩
Article dans une revue hal-01707848v1

Influence of electromechanical coupling on optical properties of InGaN quantum-dot based light-emitting diodes

D. Barettin , M.A.D. Maur , A.D. Di Carlo , A. Pecchia , A.F. Tsatsulnikov
Nanotechnology, 2017, 28 (1), ⟨10.1088/0957-4484/28/1/015701⟩
Article dans une revue hal-01736015v1

Multi-color monolithic III-nitride light-emitting diodes: Factors controlling emission spectra and efficiency

S.Y. Karpov , Nikolay Cherkashin , Wsevolod V. Lundin , Andrey E. Nikolaev , Alexei V. Sakharov
physica status solidi (a), 2016, 213 (1), pp.19-29. ⟨10.1002/pssa.201532491⟩
Article dans une revue hal-01721146v1

On the origin of dislocation loops in irradiated materials: A point of view from silicon

Alain Claverie , Nikolay Cherkashin
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2016, 374, pp.82-89. ⟨10.1016/j.nimb.2015.09.011⟩
Article dans une revue hal-01719487v1

Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs

Andrei F. Tsatsulnikov , Wsevolod V. Lundin , Alexei V. Sakharov , E.E. Zavarin , S.O. Usov
Semiconductors, 2016, 50 (9), pp.1241-1247. ⟨10.1134/S1063782616090232⟩
Article dans une revue hal-01721148v1
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Effect of the order of He+ and H+ ion co-implantation on damage generation and thermal evolution of complexes, platelets, and blisters in silicon

Nabil Daghbouj , Nikolay Cherkashin , François-Xavier Darras , Vincent Paillard , M. Fnaiech
Journal of Applied Physics, 2016, 119 (13), pp.135308 - 245301. ⟨10.1063/1.4945032⟩
Article dans une revue hal-01719485v1
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High current density GaAs/Si rectifying heterojunction by defect free Epitaxial Lateral overgrowth on Tunnel Oxide from nano-seed

Charles Renard , Timothée Molière , Nikolay Cherkashin , José Alvarez , Laetitia Vincent
Scientific Reports, 2016, 6, pp.25328. ⟨10.1038/srep25328⟩
Article dans une revue hal-01316731v1

Determination of the free gibbs energy of plate-like precipitates of hydrogen molecules and silicon vacancies formed after H+ ion implantation into silicon and annealing

Nikolay Cherkashin , François-Xavier Darras , Alain Claverie
Solid State Phenomena, 2016, 242, pp.190-195. ⟨10.4028/www.scientific.net/SSP.242.190⟩
Article dans une revue hal-01719486v1

Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation

V.G. Tikhomirov , V.E. Zemlyakov , V.V. Volkov , Y.M. Parnes , V.N. Vyuginov
Semiconductors, 2016, 50 (2), pp.244-248. ⟨10.1134/S1063782616020263⟩
Article dans une revue hal-01721147v1
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Formation of three-dimensional islands in the active region of InGaN based light emitting diodes using a growth interruption approach

Andrei F. F Tsatsulnikov , Wsevolod V. V Lundin , Alexei V. V Sakharov , Andrey E. E Nikolaev , E.E. E Zavarin
Science of advanced materials, 2015, 7 (8), pp.1629-1635. ⟨10.1166/sam.2015.2277⟩
Article dans une revue hal-01721151v1

Effect of the design of the active region of monolithic multi-color LED heterostructures on their spectra and emission efficiency

Andrei F. Tsatsulnikov , Wsevolod V. Lundin , Alexei V. Sakharov , E.E. Zavarin , S.O. Usov
Semiconductors, 2015, 49 (11), pp.1516-1521. ⟨10.1134/S1063782615110238⟩
Article dans une revue hal-01721152v1
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Cracks and blisters formed close to a silicon wafer surface by He-H co-implantation at low energy

Nikolay Cherkashin , Nabil Daghbouj , François-Xavier Darras , M. Fnaiech , Alain Claverie
Journal of Applied Physics, 2015, 118 (24), pp.245301 - 135308. ⟨10.1063/1.4938108⟩
Article dans une revue hal-01719496v1
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Role of compositional fluctuations and their suppression on the strain and luminescence of InGaN alloys

Konstantinos Pantzas , Gilles Patriarche , David Troadec , Mathieu Kociak , Nikolay Cherkashin
Journal of Applied Physics, 2015, 117 (5), pp.55705. ⟨10.1063/1.4907210⟩
Article dans une revue hal-01721149v1

Modelling of point defect complex formation and its application to H+ ion implanted silicon

Nikolay Cherkashin , François-Xavier Darras , P. Pochet , S. Reboh , Nicolas Ratel-Ramond
Acta Materialia, 2015, 99, pp.187-195. ⟨10.1016/j.actamat.2015.07.078⟩
Article dans une revue hal-01736020v1
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Extended Defects Formation in Nanosecond Laser-Annealed Ion Implanted Silicon

Yang Qiu , Fuccio Cristiano , Karim Huet , Fulvio Mazzamuto , Giuseppe Fisicaro
Nano Letters, 2014, 14 (4), pp.1769-1775. ⟨10.1021/nl4042438⟩
Article dans une revue hal-01659180v1

The effect of Ge content on the formation and evolution of 113 defects in SiGe alloys

Larbi Laânab , Amine Belafhaili , Fuccio Cristiano , Nikolay Cherkashin , Alain Claverie
physica status solidi (c), 2014, 11 (1), pp.20-23. ⟨10.1002/pssc.201300177⟩
Article dans une revue hal-01719497v1

Local strain measurements at dislocations, disclinations and domain boundaries

Martin Hÿtch , Christophe Gatel , Axel Lubk , Thibaud Denneulin , Lise Durand
Microscopy and Microanalysis, 2014, 20 (3), pp.1044-1045. ⟨10.1017/S1431927614006941⟩
Article dans une revue hal-01721157v1
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X-ray determination of threading dislocation densities in GaN/Al2O3(0001) films grown by metalorganic vapor phase epitaxy

Viktor S. Kopp , Vladimir M. Kaganer , Marina V. Baidakova , Wsevolod V. Lundin , Andrey E. Nikolaev
Journal of Applied Physics, 2014, 115 (7), pp.073507. ⟨10.1063/1.4865502⟩
Article dans une revue hal-01721159v1
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Local stress-induced effects on AlGaAs/AlOx oxidation front shape

Fares Chouchane , Guilhem Almuneau , Nikolay Cherkashin , Alexandre Arnoult , Guy Lacoste
Applied Physics Letters, 2014, 105 (4), pp.41909 - 41909. ⟨10.1063/1.4892094⟩
Article dans une revue hal-01721161v1

Growth of high quality micrometer scale GaAs/Si crystals from (001) Si nano-areas in SiO2

Charles Renard , Nikolay Cherkashin , Alexandre Jaffré , Timothée Molière , Géraldine Hallais
Journal of Crystal Growth, 2014, 401, pp.554-558. ⟨10.1016/j.jcrysgro.2014.01.065⟩
Article dans une revue hal-01721160v1

Quantification of the number of Si interstitials formed by hydrogen implantation in silicon using boron marker layers

François-Xavier Darras , Nikolay Cherkashin , Fuccio Cristiano , Emmanuel Scheid , Oleg Kononchuk
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2014, 327 (1), pp.29-32. ⟨10.1016/j.nimb.2013.09.045⟩
Article dans une revue hal-01719500v1

Dynamical effects in strain measurements by dark-field electron holography

Elsa Javon , Axel Lubk , Robin Cours , Shay Reboh , Nikolay Cherkashin
Ultramicroscopy, 2014, 147, pp.70-85. ⟨10.1016/j.ultramic.2014.06.005⟩
Article dans une revue hal-01721158v1

Dependence of the efficiency of III-N blue LEDs on the structural perfection of GaN epitaxial buffer layers

Wsevolod V. Lundin , Andrey E. Nikolaev , A.V. Sakharov , S.O. Usov , E.E. Zavarin
Semiconductors, 2014, 48 (1), pp.53-57. ⟨10.1134/S1063782614010199⟩
Article dans une revue hal-01721154v1

Dynamic scattering theory for dark-field electron holography of 3D strain fields

Axel Lubk , Elsa Javon , Nikolay Cherkashin , Shay Reboh , Christophe Gatel
Ultramicroscopy, 2014, 136, pp.42-49. ⟨10.1016/j.ultramic.2013.07.007⟩
Article dans une revue hal-01721153v1

Dislocation and antiphase domain free microscale GaAs crystals grown on SiO2 from (001) Si nano-areas

Charles Renard , Nikolay Cherkashin , Alexandre Jaffré , Laetitia Vincent , A. Michel
Applied Physics Letters, 2013, 102 (19), pp.191915 - 191915-4. ⟨10.1063/1.4807386⟩
Article dans une revue hal-00931275v1

Influence of the Germanium content on the amorphization of silicon-germanium alloys during ion implantation

A. Belafhaili , L. Laânab , Fuccio Cristiano , Nikolay Cherkashin , Alain Claverie
Materials Science in Semiconductor Processing, 2013, 16 (6), pp.1655-1658. ⟨10.1016/j.mssp.2013.04.014⟩
Article dans une revue hal-01736024v1
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Nanoscale organization by elastic interactions between H and He platelets in Si

Shay Reboh , J-F. Barbot , Maxime Vallet , M.F. Beaufort , F. Rieutord
Journal of Applied Physics, 2013, 114 (7), pp.073517. ⟨10.1063/1.4818812⟩
Article dans une revue hal-01736021v1

Strain in hydrogen-implanted si investigated using dark-field electron holography

Nikolay Cherkashin , Shay Reboh , Axel Lubk , Martin Hÿtch , Alain Claverie
Applied Physics Express, 2013, 6 (9), ⟨10.7567/APEX.6.091301⟩
Article dans une revue hal-01736022v1
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Determination of stress, strain, and elemental distribution within In(Ga)As quantum dots embedded in GaAs using advanced transmission electron microscopy

Nikolay Cherkashin , Shay Reboh , Martin Hÿtch , Alain Claverie , V.V. Preobrazhenskii
Applied Physics Letters, 2013, 102 (17), pp.173115. ⟨10.1063/1.4804380⟩
Article dans une revue hal-01736028v1
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Effect of H-implantation in the local elastic properties of silicon crystals

Shay Reboh , F. Rieutord , L. Vignoud , F. Mazen , Nikolay Cherkashin
Applied Physics Letters, 2013, 103 (18), pp.181911. ⟨10.1063/1.4828659⟩
Article dans une revue hal-01736023v1

Composite InGaN/GaN/InAlN heterostructures emitting in the yellow-red spectral region

A.F. Tsatsulnikov , W.V. Lundin , E.E. Zavarin , A.E. Nikolaev , A.V. Sakharov
Semiconductors, 2012, 46 (10), pp.1281-1285. ⟨10.1134/S1063782612100168⟩
Article dans une revue hal-01736035v1

InGaN/GaN heterostructures grown by submonolayer deposition

A.F. Tsatsulnikov , W.V. Lundin , E.E. Zavarin , A.V. Sakharov , Y.G. Musikhin
Semiconductors, 2012, 46 (10), pp.1335-1340. ⟨10.1134/S106378261210017X⟩
Article dans une revue hal-01736029v1

Composition and local strain mapping in Au-catalyzed axial Si/Ge nanowires

L. Vincent , R. Boukhicha , Nikolay Cherkashin , Shay Reboh , G. Patriarche
Nanotechnology, 2012, 23 (39), ⟨10.1088/0957-4484/23/39/395701⟩
Article dans une revue hal-01736036v1

Nanoscale concentration and strain distribution in pseudomorphic films Si1−xGex/Si processed by pulsed laser induced epitaxy

L. Vincent , F. Fossard , T. Kociniewski , L. Largeau , Nikolay Cherkashin
Applied Surface Science, 2012, 258 (23), pp.9208-9212. ⟨10.1016/j.apsusc.2011.07.074⟩
Article dans une revue hal-01736031v1

Application of the O-lattice theory for the reconstruction of the high-angle near 90? tilt Si(1 1 0)/(0 0 1) boundary created by wafer bonding

Nikolay Cherkashin , O. Kononchuk , Shay Reboh , Martin Hÿtch
Acta Materialia, 2012, 60 (3), pp.1161-1173. ⟨10.1016/j.actamat.2011.10.054⟩
Article dans une revue hal-01736034v1
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Confinement of vacancies during annealing of H implanted GaN sandwiched between two {InGaN/GaN} superlattices

Nikolay Cherkashin , Alain Claverie , D. Sotta , J.-M. Bethoux , L. Capello
Applied Physics Letters, 2012, 101 (2), pp.023105. ⟨10.1063/1.4733619⟩
Article dans une revue hal-01736033v1

Monolithic white LEDs: Approaches, technology, design

V.M. Ustinov , A.F. Tsatsulnikov , V.V. Lundin , A.V. Sakharov , A.E. Nikolaev
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques, 2012, 6 (3), pp.501-504. ⟨10.1134/S1027451012060237⟩
Article dans une revue hal-01736030v1

Effect of stimulated phase separation on properties of blue, green and monolithic white LEDs

A.F. Tsatsulnikov , W.V. Lundin , A.V. Sakharov , E.E. Zavarin , S.O. Usov
physica status solidi (c), 2012, 9 (3-4), pp.774-777. ⟨10.1002/pssc.201100339⟩
Article dans une revue hal-01736032v1

Strain mapping in layers and devices by electron holography

Martin Hÿtch , Nikolay Cherkashin , Shay Reboh , Florent Houdellier , Alain Claverie
physica status solidi (a), 2011, 208 (3), pp.580-583. ⟨10.1002/pssa.201000281⟩
Article dans une revue hal-01736038v1

InGaN/GaN short-period superlattices: synthesis, properties, applications

A. F. Tsatsulnikov , W. V. Lundin , A. V. Sakharov , E. E. Zavarin , S. O. Usov
physica status solidi (c), 2011, 8 (7-8), pp.2308--2310. ⟨10.1002/pssc.201001040⟩
Article dans une revue hal-01736040v1

Specific features of depth distribution profiles of implanted cobalt ions in rutile TiO 2

A.A. Achkeev , R.I. Khaibullin , L.R. Tagirov , A. Mackova , V. Hnatowicz
Physics of the Solid State, 2011, 53 (3), pp.543-553. ⟨10.1134/S1063783411030024⟩
Article dans une revue hal-01736037v1

Reconstruction of a high angle tilt (110)/(001) boundary in Si using O-lattice theory

Nikolay Cherkashin , O. Kononchuk , Martin Hÿtch
Solid State Phenomena, 2011, 178-179, pp.489-494. ⟨10.4028/www.scientific.net/SSP.178-179.489⟩
Article dans une revue hal-01736039v1

Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice

W.V. Lundin , A.E. Nikolaev , A.V. Sakharov , E.E. Zavarin , G.A. Valkovskiy
Journal of Crystal Growth, 2011, 315 (1), pp.267--271. ⟨10.1016/j.jcrysgro.2010.09.043⟩
Article dans une revue hal-01736042v1

Effect of pressure in the growth reactor on the properties of the active region in the InGaN/GaN light-emitting diodes

W.V. Lundin , E.E. Zavarin , M.A. Sinitsyn , A.V. Sakharov , S.O. Usov
Semiconductors, 2010, 44 (1), pp.123-126. ⟨10.1134/S1063782610010215⟩
Article dans une revue hal-01736044v1

Amorphization, recrystallization and end of range defects in germanium

Alain Claverie , S. Koffel , Nikolay Cherkashin , Gérard Benassayag , P. Scheiblin
Thin Solid Films, 2010, 518 (9), pp.2307--2313. ⟨10.1016/j.tsf.2009.09.162⟩
Article dans une revue hal-01736049v1

Formation of composite InGaN/GaN/InAlN quantum dots

A.F. Tsatsul'Nikov , E.E. Zavarin , N.V. Kryzhanovskaya , W.V. Lundin , A.V. Saharov
Semiconductors, 2010, 44 (10), pp.1338-1341. ⟨10.1134/S1063782610100167⟩
Article dans une revue hal-01736045v1

Fabrication, structural and electrical properties of compressively strained Ge-on-insulator substrates.

M. Hartmann , L. Sanchez , W. van den Daele , A. Abadie , L. Baud
Semiconductor Science & Technology, 2010, 25, pp.075010
Article dans une revue hal-00596336v1
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On the microstructure of Si coimplanted with H+ and He + ions at moderate energies

Shay Reboh , F. Schaurich , A. Declemy , J-F. Barbot , M.F. Beaufort
Journal of Applied Physics, 2010, 108 (2), pp.023502. ⟨10.1063/1.3459884⟩
Article dans une revue hal-01736048v1

The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes

V.S. Sizov , A.F. Tsatsulnikov , A.V. Sakharov , W.V. Lundin , E.E. Zavarin
Semiconductors, 2010, 44 (7), pp.924-930. ⟨10.1134/S106378261007016X⟩
Article dans une revue hal-01736047v1
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Controlled drive-in and precipitation of hydrogen during plasma hydrogenation of silicon using a thin compressively strained SiGe layer

F. Okba , Nikolay Cherkashin , Z. Di , M. Nastasi , F. Rossi
Applied Physics Letters, 2010, 97 (3), pp.31917-31917. ⟨10.1063/1.3467455⟩
Article dans une revue hal-01736050v1

Cyclic Deposition / Etch processes for the formation of Si raised sources and drains in advanced MOSFETs

J.M. Hartmann , M. Py , P.H. Morel , T. Ernst , B. Prévitali
ECS Transactions, 2010, 33 (6), pp.391-407. ⟨10.1149/1.3487570⟩
Article dans une revue hal-01736046v1

Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes

A.F. Tsatsulnikov , W.V. Lundin , A.V. Sakharov , E.E. Zavarin , S.O. Usov
Semiconductors, 2010, 44 (1), pp.93-97. ⟨10.1134/S1063782610010161⟩
Article dans une revue hal-01736052v1
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End of range defects in Ge

S. Koffel , Nikolay Cherkashin , Florent Houdellier , Martin Hÿtch , Gérard Benassayag
Journal of Applied Physics, 2009, 105, pp.126110. ⟨10.1063/1.3153985⟩
Article dans une revue hal-01736054v1
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Modeling and experiments on diffusion and activation of phosphorus in germanium

P. Tsouroutas , D. Tsoukalas , I. Zergioti , Nikolay Cherkashin , Alain Claverie
Journal of Applied Physics, 2009, 105 (9), pp.094910. ⟨10.1063/1.3117485⟩
Article dans une revue hal-01736053v1

Epitaxial growth of Ge thick layers on nominal and 6° off Si(0 0 1)\mathsemicolon Ge surface passivation by Si

J M Hartmann , A Abbadie , Nikolay Cherkashin , H Grampeix , L Clavelier
Semiconductor Science and Technology, 2009, 24 (5), pp.055002. ⟨10.1088/0268-1242/24/5/055002⟩
Article dans une revue hal-01736056v1
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On the influence of elastic strain on the accommodation of carbon atoms into substitutional sites in strained Si:C layers grown on Si substrates

Nikolay Cherkashin , Martin Hÿtch , Florent Houdellier , Florian Hüe , Vincent Paillard
Applied Physics Letters, 2009, 94 (14), pp.141910. ⟨10.1063/1.3116648⟩
Article dans une revue hal-00417300v1

Effect of strain relaxation on active-region formation in InGaN/(Al)GaN heterostructures for green LEDs

A.V. Sakharov , W.V. Lundin , E.E. Zavarin , M.A. Sinitsyn , A.E. Nikolaev
Semiconductors, 2009, 43 (6), pp.812-817. ⟨10.1134/S1063782609060232⟩
Article dans une revue hal-01736055v1

Diffusion and activation of phosphorus in germanium

P. Tsouroutas , D. Tsoukalas , I. Zergioti , Nikolay Cherkashin , Alain Claverie
Materials Science in Semiconductor Processing, 2008, 11 (5-6), pp.372--377. ⟨10.1016/j.mssp.2008.09.005⟩
Article dans une revue hal-01736063v1
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Formation and evolution of F nanobubbles in amorphous and crystalline Si

S. Boninelli , G. Impellizzeri , S. Mirabella , F. Priolo , E. Napolitani
Applied Physics Letters, 2008, 93 (6), pp.61906 - 171916. ⟨10.1063/1.2969055⟩
Article dans une revue hal-01736061v1
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Impact of the transient formation of molecular hydrogen on the microcrack nucleation and evolution in H-implanted Si (001)

S. Personnic , K.K. Bourdelle , F. Letertre , A. Tauzin , Nikolay Cherkashin
Journal of Applied Physics, 2008, 103 (2), pp.23508-1 - 23508-9. ⟨10.1063/1.2829807⟩
Article dans une revue hal-01736058v1

Reduced Pressure-Chemical Vapour Deposition of Si/SiGe heterostructures for nanoelectronics

J.M. Hartmann , F. Andrieu , D. Lafond , T. Ernst , Y. Bogumilowicz
Materials Science and Engineering: B, 2008, 154-155 (1-3), pp.76-84. ⟨10.1016/j.mseb.2008.08.009⟩
Article dans une revue hal-01736060v1

Imaging Si nanoparticles embedded in SiO2 layers by (S)TEM-EELS

Sylvie Schamm-Chardon , Caroline Bonafos , H. Coffin , Nikolay Cherkashin , Marzia Carrada
Ultramicroscopy, 2008, 108 (4), pp.346--357. ⟨10.1016/j.ultramic.2007.05.008⟩
Article dans une revue hal-01736064v1
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Splitting kinetics of Si$_{0.8}$Ge$_{0.2}$ layers implanted with H or sequentially with He and H

P. Nguyen , K.K. Bourdelle , C. Aulnette , F. Lallement , N. Daix
Journal of Applied Physics, 2008, 104, pp.113526. ⟨10.1063/1.3033555⟩
Article dans une revue hal-01736059v1
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Influence of the initial supersaturation of solute atoms on the size of nanoparticles grown by an Ostwald ripening mechanism

Nikolay Cherkashin , Alain Claverie , Caroline Bonafos , V.V. Chaldyshev , N.A. Bert
Journal of Applied Physics, 2007, 102 (2), pp.023520. ⟨10.1063/1.2749303⟩
Article dans une revue hal-01736067v1
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Wet oxidation of nitride layer implanted with low-energy Si ions for improved oxide-nitride-oxide memory stacks

V. Ioannou-Sougleridis , P. Dimitrakis , V.Em. Vamvakas , P. Normand , Caroline Bonafos
Applied Physics Letters, 2007, 90 (26), pp.263513. ⟨10.1063/1.2752769⟩
Article dans une revue hal-01736066v1

Comparison of platelet formation in hydrogen and helium-implanted silicon

Xavier Hebras , P. Nguyen , K.K. Bourdelle , F. Letertre , Nikolay Cherkashin
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2007, 262 (1), pp.24-28. ⟨10.1016/j.nimb.2007.04.158⟩
Article dans une revue hal-01736070v1

Oxide-nitride-oxide memory stacks formed by low-energy Si ion implantation into nitride and wet oxidation

V. Ioannou-Sougleridis , P. Dimitrakis , V.Em. Vamvakas , P. Normand , Caroline Bonafos
Microelectronic Engineering, 2007, 84 (9-10), pp.1986--1989. ⟨10.1016/j.mee.2007.04.068⟩
Article dans une revue hal-01736069v1

Materials science issues for the fabrication of nanocrystal memory devices by ultra low energy ion implantation

Alain Claverie , Caroline Bonafos , Gérard Benassayag , Sylvie Schamm-Chardon , Nikolay Cherkashin
Defect Diffus. Forum, 2006, 258-260, pp.531-541
Article dans une revue hal-00204809v1
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Evidences of an intermediate rodlike defect during the transformation of {113} defects into dislocation loops

S. Boninelli , Nikolay Cherkashin , Alain Claverie , Fuccio Cristiano
Applied Physics Letters, 2006, 89 (16), pp.161904. ⟨10.1063/1.2361178⟩
Article dans une revue hal-01736076v1

Transformation of {1 1 3} defects into dislocation loops mediated by the {1 1 1} rod-like defects

S. Boninelli , Nikolay Cherkashin , Alain Claverie , Fuccio Cristiano
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2006, 253 (1-2), pp.80-84. ⟨10.1016/j.nimb.2006.10.019⟩
Article dans une revue hal-01736073v1

Defects evolution and dopant activation anomalies in ion implanted silicon

Fuccio Cristiano , Y. Lamrani , F. Severac , M. Gavelle , S. Boninelli
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2006, 253 (1-2), pp.68-79. ⟨10.1016/j.nimb.2006.10.046⟩
Article dans une revue hal-01736079v1
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Oxidation of Si nanocrystals fabricated by ultralow-energy ion implantation in thin SiO2 layers

H. Coffin , Caroline Bonafos , Sylvie Schamm-Chardon , Nikolay Cherkashin , Gérard Benassayag
Journal of Applied Physics, 2006, 99 (4), pp.044302. ⟨10.1063/1.2171785⟩
Article dans une revue hal-01736074v1

Laser annealing for n+/p junction formation in germanium

P. Tsouroutas , D. Tsoukalas , A. Florakis , I. Zergioti , A.A. Serafetinides
Materials Science in Semiconductor Processing, 2006, 9 (4-5), pp.644--649. ⟨10.1016/j.mssp.2006.08.013⟩
Article dans une revue hal-01736078v1

Quantitative local strain measurements in compressive strained Ge/tensile strained Si bi-layers grown on top of relaxed Si0.5Ge0.5 virtual substrates

Nikolay Cherkashin , Martin Hÿtch , Etienne Snoeck , Florian Hüe , J.M. Hartmann
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2006, 253 (1-2), pp.145-148. ⟨10.1016/j.nimb.2006.10.051⟩
Article dans une revue hal-01736071v1

Synthesis of mono and bi-layer of Si nanocrystals embedded in a dielectric matrix by e-beam evaporation of SiO/SiO2 thin films

M. Perego , M. Fanciulli , Caroline Bonafos , Nikolay Cherkashin
Materials Science and Engineering: C, 2006, 26 (5-7), pp.835--839. ⟨10.1016/j.msec.2005.09.058⟩
Article dans une revue hal-01736077v1

Quantitative strain and stress measurements in Ge/Si dual channels grown on a Si0.5Ge0.5 virtual substrate

Nikolay Cherkashin , Martin Hÿtch , Etienne Snoeck , Alain Claverie , J.M. Hartmann
Materials Science and Engineering: B, 2005, 124-125, pp.118--122. ⟨10.1016/j.mseb.2005.08.054⟩
Article dans une revue hal-01736084v1

Si nanocrystals by ultra-low-energy ion beam-synthesis for non-volatile memory applications

Caroline Bonafos , H. Coffin , Sylvie Schamm-Chardon , Nikolay Cherkashin , Gérard Benassayag
Solid-State Electronics, 2005, 49 (11), pp.1734--1744. ⟨10.1016/j.sse.2005.10.001⟩
Article dans une revue hal-01736088v1

Si nanocrystals by ultra-low energy ion implantation for non-volatile memory applications

H. Coffin , Caroline Bonafos , Sylvie Schamm-Chardon , Marzia Carrada , Nikolay Cherkashin
Materials Science and Engineering: B, 2005, 124-125, pp.499--503. ⟨10.1016/j.mseb.2005.08.129⟩
Article dans une revue hal-01736081v1

SiGe virtual substrates growth up to 50% Ge concentration for Si/Ge dual channel epitaxy

Y. Bogumilowicz , J.M. Hartmann , Nikolay Cherkashin , Alain Claverie , G. Rolland
Materials Science and Engineering: B, 2005, 124-125 (SUPPL.), pp.113-117. ⟨10.1016/j.mseb.2005.08.052⟩
Article dans une revue hal-01736080v1

Deactivation of Solid Phase Epitaxy-Activated Boron Ultrashallow Junctions

W. Lerch , S. Paul , J. Niess , Fuccio Cristiano , Y. Lamrani
Journal of The Electrochemical Society, 2005, 152 (10), pp.G787. ⟨10.1149/1.2018176⟩
Article dans une revue hal-01736089v1

Size and aerial density distributions of Ge nanocrystals in a SiO 2 layer produced by molecular beam epitaxy and rapid thermal processing

A. Kanjilal , J.L. Hansen , P. Gaiduk , A.N. Larsen , P. Normand
Applied physics. A, Materials science & processing, 2005, 81 (2), pp.363-366. ⟨10.1007/s00339-004-2924-3⟩
Article dans une revue hal-01736082v1
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Fabrication of nanocrystal memories by ultra low energy ion implantation

Nikolay Cherkashin , Caroline Bonafos , H. Coffin , Marzia Carrada , Sylvie Schamm-Chardon
physica status solidi (c), 2005, 2 (6), pp.1907--1911. ⟨10.1002/pssc.200460523⟩
Article dans une revue hal-01736090v1

Structure determination of clusters formed in ultra-low energy high-dose implanted silicon

Nikolay Cherkashin , Martin Hÿtch , Fuccio Cristiano , Alain Claverie
Solid State Phenomena, 2005, 108-109, pp.303-308. ⟨10.4028/www.scientific.net/SSP.108-109.303⟩
Article dans une revue hal-01736085v1

High germanium content SiGe virtual substrates grown at high temperatures

Y. Bogumilowicz , J.M. Hartmann , F. Laugier , G. Rolland , T. Billon
Journal of Crystal Growth, 2005, 283 (3-4), pp.346--355. ⟨10.1016/j.jcrysgro.2005.06.036⟩
Article dans une revue hal-01736086v1

On the “Life” of {113} Defects

Nikolay Cherkashin , P. Calvo , Fuccio Cristiano , B. de Mauduit , Alain Claverie
MRS Proceedings, 2004, 810, pp.103-108. ⟨10.1557/PROC-810-C3.7⟩
Article dans une revue hal-01736093v1

Capacitance study of electron traps in low-temperature-grown GaAs

P. N. Brunkov , A. A. Gutkin , A. K. Moiseenko , Yu. G. Musikhin , V. V. Chaldyshev
Semiconductors, 2004, 38 (4), pp.387--392. ⟨10.1134/1.1734663⟩
Article dans une revue hal-01736105v1

Ion beam induced defects in crystalline silicon

Fuccio Cristiano , Nikolay Cherkashin , Xavier Hebras , P. Calvo , Y. Lamrani
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2004, 216 (1-4), pp.46-56. ⟨10.1016/j.nimb.2003.11.019⟩
Article dans une revue hal-01736101v1

Effect of nonradiative recombination centers on photoluminescence efficiency in quantum dot structures

M. V. Maksimov , D. S. Sizov , A. G. Makarov , I. N. Kayander , L. V. Asryan
Semiconductors, 2004, 38 (10), pp.1207--1211. ⟨10.1134/1.1808830⟩
Article dans une revue hal-01736102v1

High Ge content Si / SiGe heterostructures for microelectronics and optoelectronics purposes

Y. Bogumilowicz , J.M. Hartmann , J.F. Damlencourt , B. Vandelle , A. Abbadie
Proceedings - Electrochemical Society, 2004, 7, pp.665-679
Article dans une revue hal-01736107v1

Depth dependence of defect evolution and TED during annealing

B. Colombeau , N.E.B. Cowern , Fuccio Cristiano , P. Calvo , Y. Lamrani
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2004, 216, pp.90-94
Article dans une revue hal-00140976v1

Thermal stability of boron electrical activation in preamorphised ultra-shallow junctions

Fuccio Cristiano , Nikolay Cherkashin , P. Calvo , Y. Lamrani , Xavier Hebras
Materials Science and Engineering: B, 2004, 114-115 (SPEC. ISS.), pp.174-179. ⟨10.1016/j.mseb.2004.07.049⟩
Article dans une revue hal-01736096v1
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Manipulation of two-dimensional arrays of Si nanocrystals embedded in thin SiO 2 layers by low energy ion implantation

Caroline Bonafos , Marzia Carrada , Nikolay Cherkashin , H. Coffin , D. Chassaing
Journal of Applied Physics, 2004, 95 (10), pp.5696-5702. ⟨10.1063/1.1695594⟩
Article dans une revue hal-01736103v1
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Resonant Raman scattering of a single layer of Si nanocrystals on a silicon substrate

A. Wellner , Vincent Paillard , H. Coffin , Nikolay Cherkashin , Caroline Bonafos
Journal of Applied Physics, 2004, 96 (4), pp.2403-2405. ⟨10.1063/1.1765853⟩
Article dans une revue hal-01736095v1
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Multi-dot floating-gates for nonvolatile semiconductor memories: Their ion beam synthesis and morphology

T. Müller , K.-H. Heinig , W. Möller , Caroline Bonafos , H. Coffin
Applied Physics Letters, 2004, 85 (12), pp.2373-2375
Article dans une revue hal-01736097v1

Activation, Diffusion and Defect Analysis of a Spike Anneal Thermal Cycle

Silke Paul , Wilfried Lerch , Xavier Hebras , Nikolay Cherkashin , Fuccio Cristiano
MRS Proceedings, 2004, 810, ⟨10.1557/proc-810-c5.4⟩
Article dans une revue hal-01736104v1

Thermal evolution of {1 1 3} defects in silicon: transformation against dissolution

P. Calvo , Alain Claverie , Nikolay Cherkashin , B. Colombeau , Y. Lamrani
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2004, 216 (1-4), pp.173-177. ⟨10.1016/j.nimb.2003.11.075⟩
Article dans une revue hal-01736098v1

Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications

P. Normand , E. Kapetanakis , P. Dimitrakis , D. Skarlatos , K. Beltsios
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2004, 216 (1-4), pp.228-238. ⟨10.1016/j.nimb.2003.11.039⟩
Article dans une revue hal-01736094v1
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Time evolution of the depth profile of {113} defects during transient enhanced diffusion in silicon

B. Colombeau , N.E.B. Cowern , Fuccio Cristiano , P. Calvo , Nikolay Cherkashin
Applied Physics Letters, 2003, 83 (10), pp.1953-1955. ⟨10.1063/1.1608489⟩
Article dans une revue hal-01736110v1

Multi-Dot Floating-Gates in MOSFETs for nonvolatile memories - Their ion beam synthesis and morphology

T. Müller , K.-H. Heinig , Caroline Bonafos , H. Coffin , Nikolay Cherkashin
Materials Research Society Symposium - Proceedings, 2003, 792, pp.333-338. ⟨10.1557/PROC-792-R8.7⟩
Article dans une revue hal-01736111v1

Polarized micro-photoluminescence spectroscopy of GaN nanocolumns

T.V. Shubina , V.N. Jmerik , S.V. Ivanov , D.D. Solnyshkov , Nikolay Cherkashin
physica status solidi (c), 2003, 7, pp.2602-2605. ⟨10.1002/pssc.200303330⟩
Article dans une revue hal-01736108v1

Effect of ion energy and dose on the positioning of 2D-arrays of Si nanocrystals ion beam synthesised in thin SiO2 layers

Marzia Carrada , Nikolay Cherkashin , Caroline Bonafos , Gérard Benassayag , D. Chassaing
Materials Science and Engineering: B, 2003, 101 (1-3), pp.204-207. ⟨10.1016/S0921-5107(02)00724-9⟩
Article dans une revue hal-01736116v1

Control over the parameters of InAs-GaAs quantum dot arrays in the Stranski-Krastanow growth mode

Nikolay Cherkashin , M. V. Maksimov , A. G. Makarov , V. A. Shchukin , V. M. Ustinov
Semiconductors, 2003, 37 (7), pp.861--865. ⟨10.1134/1.1592865⟩
Article dans une revue hal-01736113v1
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Effect of annealing environment on the memory properties of thin oxides with embedded si nanocrystals obtained by low-energy ion-beam synthesis

P. Normand , E. Kapetanakis , P. Dimitrakis , D. Tsoukalas , K. Beltsios
Applied Physics Letters, 2003, 83 (1), pp.168-170. ⟨10.1063/1.1588378⟩
Article dans une revue hal-01736112v1
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Structural and electrical properties of silicon dioxide layers with embedded germanium nanocrystals grown by molecular beam epitaxy

A. Kanjilal , J.L. Hansen , P. Gaiduk , A.N. Larsen , Nikolay Cherkashin
Applied Physics Letters, 2003, 82 (8), pp.1212-1214. ⟨10.1063/1.1555709⟩
Article dans une revue hal-01736109v1
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Clusters formation in ultralow-energy high-dose boron-implanted silicon

Fuccio Cristiano , Xavier Hebras , Nikolay Cherkashin , Alain Claverie , W. Lerch
Applied Physics Letters, 2003, 83 (26), pp.5407-5409. ⟨10.1063/1.1637440⟩
Article dans une revue hal-01736115v1

Effects of annealing conditions on charge storage of Si nanocrystal memory devices obtained by low-energy ion beam synthesis

P. Normand , E. Kapetanakis , P. Dimitrakis , D. Skarlatos , D. Tsoukalas
Microelectronic Engineering, 2003, 67-68, pp.629-634. ⟨10.1016/S0167-9317(03)00124-2⟩
Article dans une revue hal-01736114v1

The influence of heat treatment conditions on the evaporation of defect regions in structures with InGaAs quantum dots in the GaAs matrix

D. S. Sizov , M. V. Maksimov , A. F. Tsatsul'Nikov , Nikolay Cherkashin , N. V. Kryzhanovskaya
Semiconductors, 2002, 36 (9), pp.1020--1026. ⟨10.1134/1.1507285⟩
Article dans une revue hal-01736122v1

Dependence of junction depth and sheet resistance on the thermal budget in the low temperature pre-stabilization regime

B. Bayha , S. Paul , W. Lerch , D.F. Downey , E.A. Arevalo
Proceedings of the International Conference on Ion Implantation Technology, 2002, 22-27-September-2002, pp.618-621. ⟨10.1109/IIT.2002.1258081⟩
Article dans une revue hal-01736121v1

Effect of the growth parameters on the electron structure of quantum dots in InGaAs/GaAs heterostructures

A.A. Tonkikh , V.A. Egorov , N.K. Polyakov , G.?. Tsyrlin , B.V. Volovik
Technical Physics Letters, 2002, 28 (3), pp.191-193. ⟨10.1134/1.1467272⟩
Article dans une revue hal-01736119v1

Two- and three-dimensional arrays of nanoscale as clusters in low-temperature grown GaAs

N.A. Bert , Nikolay Cherkashin , V.V. Chaldyshev , Alain Claverie , V.V. Preobrazhenskii
IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC, 2002, pp.233-236. ⟨10.1109/SIM.2002.1242762⟩
Article dans une revue hal-01736118v1

Optical and structural properties of self-organized InGaAsN/GaAs nanostructures

B V Volovik , a R Kovsh , W Passenberg , H Kuenzel , N Grote
Semiconductor Science and Technology, 2001, 16 (3), pp.186--190. ⟨10.1088/0268-1242/16/3/312⟩
Article dans une revue hal-01736129v1

InGaAs nanodomains formed in situ on the surface of (Al,Ga)As

I.L. Krestnikov , Nikolay Cherkashin , D.S. Sizov , D.A. Bedarev , I.V. Kochnev
Technical Physics Letters, 2001, 27 (3), pp.233-235. ⟨10.1134/1.1359837⟩
Article dans une revue hal-01736125v1

Transmission electron microscopy of GaN columnar nanostructures grown by molecular beam epitaxy

V. V. Mamutin , Nikolay Cherkashin , V. A. Vekshin , V. N. Zhmerik , S. V. Ivanov
Physics of the Solid State, 2001, 43 (1), pp.151--156. ⟨10.1134/1.1340201⟩
Article dans une revue hal-01736127v1

Reversibility of the island shape, volume and density in Stranski-Krastanow growth

N N Ledentsov , V A Shchukin , D Bimberg , V M Ustinov , Nikolay Cherkashin
Semiconductor Science and Technology, 2001, 16 (6), pp.502--506. ⟨10.1088/0268-1242/16/6/316⟩
Article dans une revue hal-01736128v1

Photoluminescence emission (1.3-1.4 ?m) from quantum dots heterostructures based on GaAs

V.A. Egorov , N.K. Polyakov , A.A. Tonkikh , V.N. Petrov , G.E. Cirlin
Applied Surface Science, 2001, 175-176, pp.243-248
Article dans une revue hal-01736123v1

Reduction of defect density in structures with InAs-GaAs quantum dots grown at low temperature for 1.55 ?m range

N.D. Zakharov , P. Werner , U. Gösele , N.N. Ledentsov , D. Bimberg
Materials Research Society Symposium - Proceedings, 2001, 672, pp.O8.5.1-O8.5.6
Article dans une revue hal-01736124v1

Formation of defect-free InGaAs-GaAs quantum dots for 1.3 ?m spectral range grown by metal-organic chemical vapor deposition

I.L. Krestnikov , N.N. Ledentsov , M.V. Maximov , D. Bimberg , D.A. Bedarev
Proceedings of the 8th International Symposium Nanostructures: Physics and Technology, 2000, pp.355-358
Article dans une revue hal-01736132v1

Thermal annealing of defects in InGaAs/GaAs heterostructures with three-dimensional islands

M.M. Sobolev , I.V. Kochnev , V.M. Lantratov , N.A. Bert , Nikolay Cherkashin
Semiconductors, 2000, 34 (2), pp.195-204. ⟨10.1134/1.1187932⟩
Article dans une revue hal-01736130v1

1.3 \mathrmμm luminescence and gain from defect-free InGaAs-GaAs quantum dots grown by metal-organic chemical vapour deposition

N N Ledentsov , M V Maximov , D Bimberg , T Maka , C M Sotomayor Torres
Semiconductor Science and Technology, 2000, 15 (6), pp.604--607. ⟨10.1088/0268-1242/15/6/320⟩
Article dans une revue hal-01736135v1

Influence of annealing on the formation of inGaAs quantum dots in GaAs matrix during metal organic chemical vapor deposition

Nikolay Cherkashin , N.A. Bert , N.N. Ledentsov , I.V. Kochnev , V.M. Lantratov
Proceedings of the 8th International Symposium Nanostructures: Physics and Technology, 2000, pp.117-120
Article dans une revue hal-01736134v1

TEM structural studies of undoped and Si-doped GaN grown on Al2O3 substrate

Nikolay Cherkashin , N.A. Bert , Yu.G. Musikhin , S.V. Novikov , T.S. Cheng
Semiconductors, 2000, 34 (8), pp.867-871. ⟨10.1134/1.1188090⟩
Article dans une revue hal-01736131v1

Hole and electron traps in the InGaAs/GaAs heterostructures with quantum dots

M.M. Sobolev , I.V. Kochnev , V.M. Lantratov , Nikolay Cherkashin , V.V. Emtsev
Physica B: Condensed Matter, 1999, 273-274, pp.959-962
Article dans une revue hal-01736136v1

Novel approach for displacement and strain mapping from HR-(S)TEM images of crystalline materials

Nikolay Cherkashin
Microscopy of Semi-Conducting Materials Conference 2023, Thomas Walther, Rachel A Oliver, Apr 2023, Cambridge (GB), United Kingdom
Communication dans un congrès hal-04258683v1

Quantitative mapping of strain and displacement fields in complex oxides by STEM studies

Nikolay Cherkashin
Emergent phenomena in low-dimensional ferroelectric structures, May 2022, Berlin, Germany
Communication dans un congrès hal-03698690v1

Fabrication of barium titanate nanopillars by neon ion milling

Ibukun Olaniyan , S.W. Schmitt , Javier Garcia-Fernandez , J. Albert , Veeresh Deshpande
IEEE ISAF 2022, Jun 2022, Tours, France
Communication dans un congrès hal-03750458v1

Determination of intrinsic strain tensor components in nanostructures from HR-(S)TEM images in absence of reference lattice

Nikolay Cherkashin
GADEST-19, Sep 2022, Mondsee, Austria
Communication dans un congrès hal-03814716v1

Time-Resolved Cathodoluminescence in a Transmission Electron Microscope

Sophie Meuret , Nikolay Cherkashin , L. H. G. Tizei , Yves Auad , Sébastien J. Weber
11th International Conference on Metamaterials, Photonic Crystals and Plasmonics (META 2021), Jul 2021, Warsaw, Poland
Communication dans un congrès hal-04449931v1

Transfer of Si and LiTaO3 thin layers: physics behind a fracture of materials by SmartCutTM technology

Nikolay Cherkashin
International conference PhysicA.SPb/2020, Oct 2020, Saint-Petersbourg, Russia
Communication dans un congrès hal-03019217v1

Quantum-dot oxide-confined 850-nm VCSELs with extreme temperature stability operating at 25 Gbit/s up to 180deg C

Nikolay Ledentsov , Lukasz Chorchos , Oleg Makarov , Jörg-Reinhardt Kropp , Vitaly Shchukin
Vertical-Cavity Surface-Emitting Lasers XXIV, Feb 2020, San Francisco, United States. pp.15, ⟨10.1117/12.2543244⟩
Communication dans un congrès hal-03375527v1
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Building blocks development for defect-free growth of GaAs on silicon for tandem solar cells

Denis Mencaraglia , Charles Renard , Nikolay Cherkashin , G. Hallais , Alexandre Jaffré
36th European Photovoltaic Solar Energy Conference and Exhibition, WIP, Sep 2019, Marseille, France. pp.757, ⟨10.4229/EUPVSEC20192019-3BV.2.49⟩
Communication dans un congrès hal-02343896v1

Quantitative strain distribution in electromechanically coupled IV-IV and III-V semiconductor quantum dots

Nikolay Cherkashin
MGCTF 2019, Jul 2019, Saint Petersbourg, Russia
Communication dans un congrès hal-02304422v1

Strain measurements and mapping with a nanometer resolution and high precision at the most basic conventional TEM: moiré based technique by specimen design

Nikolay Cherkashin
Energy Materials Nanotechnology (EMN 2018), May 2018, Heraklion, Greece
Communication dans un congrès hal-01763087v1

Advanced methods for strain measurement in crystalline nanomaterials: application to multilayer InAlGaP quantum dots formed on high-index (11l)GaAs substrates”

Nikolay Cherkashin , V.A. Shchukin , Nikolai N. Ledentsov
XXVII International Materials Research Congress (IMRC 2018), Aug 2018, Cancun, Mexico
Communication dans un congrès hal-01773833v1

New developments of the SmartCut process for slicing thin layers

Alain Claverie , Nikolay Cherkashin
EMN Conference, May 2018, Héraklion, Greece
Communication dans un congrès hal-01767500v1

Advanced methods for strain measurements in crystalline materials by transmission electron microscopy”, Nanostructures: Physics and Technology

Nikolay Cherkashin
26th Intern. Symposium, Jun 2018, Minsk, Belarus
Communication dans un congrès hal-01767536v1

Materials science behind the Smart Cut process

Nikolay Cherkashin , François-Xavier Darras , Nabil Daghbouj , Alain Claverie
22nd Intern. Conf. on Ion Implantation Technology (IIT 2018), Sep 2018, Würzburg, Germany
Communication dans un congrès hal-01767778v1

Green, yellow and bright red (In,Ga,Al)P-GaP diode lasers grown on high-index GaAs substrates

N.N. Ledentsov , V.A. Shchukin , Y.M. Shernyakov , M.M. Kulagina , A.S. Payusov
SPIE LASE 2017, High-Power Diode Laser Technology XV, Jan 2017, San Francisco, United States. ⟨10.1117/12.2252957⟩
Communication dans un congrès hal-01736016v1

Sequential He++H+ ion implantation in silicon: factors affecting blistering”

Nikolay Cherkashin , Nabil Daghbouj , Alain Claverie
4th International Conference On Nano Structuring by Ion Beam (ICNIB 2017), Oct 2017, Indore, India
Communication dans un congrès hal-01763083v1

. Effect of the Order of He and H Ion Sequential Implantations on Damage Generation and Subsequent Thermal Evolution of Defects in Silicon

Alain Claverie , Nikolay Cherkashin
SMMIB 2017, 2017, Lisbonne, Portugal
Communication dans un congrès hal-01763581v1

The materials science behind the Smart Cut process

Alain Claverie , Nikolay Cherkashin
IWPSD 2017, 2017, New Delhi, India
Communication dans un congrès hal-01763588v1

Blistering of silicon surfaces due to very low energy H and He co-implantation

Alain Claverie , Nabil Daghbouj , Nikolay Cherkashin
EMN Conference, May 2016, Dubrovnic, Croatia
Communication dans un congrès hal-01763096v1

MOCVD Grown InGaN/GaN Three-Dimensional Islands: Growth Approaches, Strain-Composition Characterization, Exploitation for LEDs

Nikolay Cherkashin , Martin Hÿtch , Maxim Korytov , Daniele Barettin , A. V. Sakharov
Energy Materials Nanotechnology (EMN), May 2016, Dubrovnik, Croatia
Communication dans un congrès hal-01763074v1

Advanced characterization of semiconductors

Nikolay Cherkashin , François-Xavier Darras , Maxim Korytov , Christophe Gatel , Martin Hÿtch
XV B-MRS, Sep 2016, Campinas, Brazil
Communication dans un congrès hal-01767758v1

Green (In,Ga,Al)P-GaP light-emitting diodes grown on high-index GaAs surfaces

N.N. Ledentsov , V.A. Shchukin , J. Lyytikäinen , O. Okhotnikov , Nikolay Cherkashin
SPIE OPTO 2015, Feb 2015, San Francisco, United States. ⟨10.1117/12.2083953⟩
Communication dans un congrès hal-01736019v1

Realistic model of LED structure with InGaN quantum-dots active region

Daniele Barettin , Matthias auf Der Maur , Alessandro Pecchia , Walter Rodrigues , Andrei F. Tsatsulnikov
Nanotechnology (IEEE-NANO) 2015 IEEE 15th International Conference on, 2015, Unknown, Unknown Region. pp.1543-1546, ⟨10.1109/NANO.2015.7388939⟩
Communication dans un congrès hal-01721150v1

Measurement of crystalline lattice strain by transmission electron microscopy”

Nikolay Cherkashin , Florent Houdellier , Martin Hÿtch , Maxim Korytov
14ème colloque de la Société Française des Microscopies, Jun 2015, Nice, France
Communication dans un congrès hal-01763051v1

Strain imaging of processed layers and devices by dark field electron holography

Alain Claverie , Victor Boureau , Martin Hÿtch , Nikolay Cherkashin
Congress of the Electron Microscopy Society of India, Jul 2014, ??, India
Communication dans un congrès hal-01763638v1

Extended defects in ion-implanted si during nanosecond laser annealing

Fuccio Cristiano , Y. Qiu , Eléna Bedel-Pereira , Karim Huet , Fulvio Mazzamuto
Junction Technology (IWJT), 2014 International Workshop on, May 2014, Shanghai, China. pp.7-12, ⟨10.1109/IWJT.2014.6842019⟩
Communication dans un congrès hal-01721156v1

Route toward III-V multispectral solar cells on silicon

Timothée Molière , Charles Renard , Alexandre Jaffré , Laetitia Vincent , Daniel Bouchier
E-MRS Spring Meeting 2014, European Materials Research Society, May 2014, Lille, France
Communication dans un congrès hal-01099576v1

Defects and Strain imaging of ion implanted materials

Alain Claverie , Nikolay Cherkashin
Ion Implantation Technology 2014, Jun 2014, Portland, United States
Communication dans un congrès hal-01763647v1
Image document

Deep green and monolithic white LEDs based on combination of short-period InGaN/GaN superlattice and InGaN QWs

A.F. Tsatsulnikov , W.V. Lundin , A.V. Sakharov , E.E. Zavarin , S.O. Usov
PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors, 2011, Seoul, France. pp.253-254, ⟨10.1063/1.3666350⟩
Communication dans un congrès hal-01736043v1

Strain Mapping of Layers and Devices Using Electron Holography

Alain Claverie , Nikolay Cherkashin , Florian Hüe , Shay Reboh , Florent Houdellier
ECS Trans. 2010, 2010, Unknown, Unknown Region. ⟨10.1149/1.3487533⟩
Communication dans un congrès hal-01736051v1
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Optoelectronic structures with InAlN layers grown by MOVPE

A.V. Sakharov , W.V. Lundin , E.E. Zavarin , M.A. Sinitsyn , S.O. Usov
30th International Conference on the Physics of Semiconductors, Jul 2010, Séoul, South Korea. pp.107-108, ⟨10.1063/1.3666279⟩
Communication dans un congrès hal-01736041v1

Crystalline Structure of HfZrO Thin Films and ZrO2 / HfO2 bi-Layers Grown by AVD for MOS Applications

Sandrine Lhostis , Clement Gaumer , Caroline Bonafos , Sylvie Schamm-Chardon , Nikolay Cherkashin
ECS Transactions, 2008, Unknown, Unknown Region. ⟨10.1149/1.2911489⟩
Communication dans un congrès hal-01736062v1

Critical Analysis of Different Techniques for Measuring Strain in Si1-yCy Layers Grown by CVD on a Si Substrate

Nikolay Cherkashin , Adrien Gouye , Florian Hüe , Florent Houdellier , Martin Hÿtch
ECS Transactions, May 2008, Unknown, Unknown Region. ⟨10.1149/1.2911510⟩
Communication dans un congrès hal-01736065v1

Determination of strain within Si1-yCy layers grown by CVD on a Si substrate

Nikolay Cherkashin , A. Gouye , Florian Hüe , Florent Houdellier , Martin Hÿtch
Symposium C – Quantitative Electron Microscopy for Materials Science, 2007, undetermined, France. pp.12-19, ⟨10.1557/PROC-1026-C07-03⟩
Communication dans un congrès hal-01736057v1

Materials science issues for the fabrication of naocrystal memory devices by ultra low energy ion implantation

Alain Claverie , Caroline Bonafos , Gérard Benassayag , Sylvie Schamm-Chardon , Nikolay Cherkashin
2nd International Conference on Diffusion in Solids and Liquids, DSL-2006, 2006, Aveiro, Portugal
Communication dans un congrès hal-00115744v1
Image document

Time dependence study of hydrogen-induced defects in silicon during thermal anneals

S. Personnic , A. Tauzin , K.K. Bourdelle , F. Letertre , N. Kernevez
16th International Conference on Ion Implantation Technology (IIT 2006), Jun 2006, Marseille (France), France. pp.65-68, ⟨10.1063/1.2401463⟩
Communication dans un congrès hal-01736075v1

Review of some critical aspects of Ge and GeOI substrates

L. Clavelier , C. Deguet , C. Le Royer , B. Vincent , J.-F. Damlencourt
Workshop on Germanium for CMOS, Nov 2006, ville indéterminée, Unknown Region. pp.789-805, ⟨10.1149/1.2355874⟩
Communication dans un congrès hal-01736072v1

Ge nanocrystals in MOS-memory structures produced by molecular-beam epitaxy and rapid-thermal processing

A.N. Larsen , A. Kanjilal , J.L. Hansen , P. Gaiduk , P. Normand
Symposium D – Materials and Processes for Nonvolatile Memories, 2005, indéterminée, Unknown Region. pp.263-267, ⟨10.1557/PROC-830-D6.2⟩
Communication dans un congrès hal-01736092v1

Strained Si and Ge MOSFETs with high-K/metal gate stack for high mobility dual channel CMOS

O. Weber , Y. Bogumilowicz , T. Ernst , J.-M. Hartmann , F. Ducroquet
IEEE International Electron Devices Meeting, 2005, Dec 2005, Washington, United States. pp.137-140, ⟨10.1109/IEDM.2005.1609288⟩
Communication dans un congrès hal-01736083v1

Oxidation of Si nanocrystals fabricated by ultra-low energy ion implantation in thin SiO2 layers

H. Coffin , Caroline Bonafos , Sylvie Schamm-Chardon , Nikolay Cherkashin , Marc Respaud
Symposium D – Materials and Processes for Nonvolatile Memories, 2005, indéterminée, Unknown Region. pp.281-286, ⟨10.1557/PROC-830-D6.6⟩
Communication dans un congrès hal-01736087v1

Manipulation of 2D arrays of Si nanocrystals by ultra-low-energy ion beam-synthesis for nonvolatile memories applications

Caroline Bonafos , Nikolay Cherkashin , Marzia Carrada , H. Coffin , Gérard Benassayag
Symposium D – Materials and Processes for Nonvolatile Memories, 2005, indéterminée, Unknown Region. pp.217-222, ⟨10.1557/PROC-830-D5.2⟩
Communication dans un congrès hal-01736091v1

Solid phase epitaxy process integration on 50-nm PMOS devices: Effects of defects on chemical and electrical characteristics of ultra shallow junctions

R. El Farhane , C. Laviron , Fuccio Cristiano , Nikolay Cherkashin , P. Morin
Symposium C – Silicon Front-End Junction Formation-Physics and Technology, 2004, indéterminée, Unknown Region. pp.21-27, ⟨10.1557/PROC-810-C1.4⟩
Communication dans un congrès hal-01736099v1

Solid phase epitaxy - Activation and deactivation of boron in ultra-shallow junctions

W. Lerch , S. Paul , J. Niess , Fuccio Cristiano , Y. Lamrani
Advanced short-time thermal processing for Si-based CMOS devices , 2004, indéterminée, Unknown Region. pp.90-105
Communication dans un congrès hal-01736100v1

Activation, diffusion and defect analysis of a spike anneal thermal cycle

Silke Paul , Wilfried Lerch , Xavier Hebras , Nikolay Cherkashin , Fuccio Cristiano
Symposium C – Silicon Front-End Junction Formation-Physics and Technology, 2004, indéterminée, Unknown Region. pp.215-221, ⟨10.1557/PROC-810-C5.4⟩
Communication dans un congrès hal-01736106v1

Relation between thermal evolution of interstitial defects and transient enhanced diffusion in silicon

Alain Claverie , Fuccio Cristiano , B. Colombeau , Xavier Hebras , P. Calvo
2003, pp.73
Communication dans un congrès hal-00146421v1

1.3-\upmum edge- and surface-emitting quantum dot lasers grown on GaAs substrates

Victor M. Ustinov , Alexey E. Zhukov , Nikolay A. Maleev , Anton Y. Egorov , Alexey R. Kovsh
Physics and Simulation of Optoelectronic Devices X, 2002, Unknown, Unknown Region. ⟨10.1117/12.470541⟩
Communication dans un congrès hal-01736120v1

High luminescence efficiency from GaAsN layers grown by MBE with RF nitrogen plasma source

V.M. Ustinov , Nikolay Cherkashin , N.A. Bert , A.F. Tsatsul'Nikov , A.R. Kovsh
Symposium H – Progress in Semiconductor Materials for Optoelectronic Applications, 2001, Boston, United States. pp.35-40, ⟨10.1557/PROC-692-H1.10.1⟩
Communication dans un congrès hal-01736117v1

Dark-Field Electron Holography for Strain Mapping

Martin Hÿtch , Florent Houdellier , Nikolay Cherkashin , Shay Reboh , Elsa Javon
Alain Claverie; Mireille Mouis. Transmission Electron Microscopy in Micro-Nanoelectronics, Wiley-Blackwell, pp.81--106, 2013, ⟨10.1002/9781118579022.ch4⟩
Chapitre d'ouvrage hal-01736026v1

Characterization of Process-Induced Defects

Nikolay Cherkashin , Alain Claverie
Alain Claverie ; Mireille Mouis. Transmission Electron Microscopy in Micro-Nanoelectronics, Wiley-Blackwell, pp.165--198, 2013, ⟨10.1002/9781118579022.ch7⟩
Chapitre d'ouvrage hal-01736027v1
Image document

Précipitation sous contrainte dans les semiconducteurs

Obtention De , Nikolay Cherkashin
Science des matériaux [cond-mat.mtrl-sci]. Univesité Toulouse III- Paul Sabatier; Ecole doctorale Sciences de la matière; Section CNU Milieux denses et matériaux, 2017
HDR tel-01800161v1