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Pierre Lefebvre

Pierre LEFEBVRE - Directeur de Recherche CNRS - Directeur du Laboratoire Charles Coulomb (L2C)
276
Documents
Identifiants chercheurs

Publications

Surface related optical properties of GaN-based nanowires.

Pierre Lefebvre
V. Consonni, G. Feuillet. Wide Band Gap Semiconductor Nanowires 1., John Wiley & Sons, Inc., Hoboken, NJ, USA., pp.59-79, 2014, Print: 978-1-84821-597-9. Online:9781118984321. ⟨10.1002/9781118984321.ch3⟩
Chapitre d'ouvrage hal-01061571v1

Physics and optical properties of GaN-AlGaN quantum wells.

Pierre Lefebvre , Bernard Gil , Jean Massies , Nicolas Grandjean , Mathieu Leroux
H. Jiang; O. Manasreh III-V Nitride Semiconductors : Optical Properties I, Taylor & Francis Books, pp.249, 2002, 1-56032-972-6
Chapitre d'ouvrage hal-01306468v1
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Electrostatic modulation of excitonic fluid in GaN/AlGaN quantum wells by deposition of few-layer graphene and nickel/gold films

R. Aristegui , P. Lefebvre , C. Brimont , T. Guillet , M. Vladimirova
Physical Review B, 2023, 108 (12), pp.125421. ⟨10.1103/PhysRevB.108.125421⟩
Article dans une revue hal-04251300v1
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Effect of electric bias on trapping and release of excitons in GaN/(Al,Ga)N quantum wells

R. Aristegui , F. Chiaruttini , B. Jouault , P. Lefebvre , C. Brimont
Physical Review B, 2022, 106 (3), pp.035429. ⟨10.1103/PhysRevB.106.035429⟩
Article dans une revue hal-03759667v1
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Complexity of the dipolar exciton Mott transition in GaN/(AlGa)N nanostructures

F. Chiaruttini , T. Guillet , Christelle Brimont , D. Scalbert , S. Cronenberger
Physical Review B, 2021, 103 (4), pp.045308. ⟨10.1103/PhysRevB.103.045308⟩
Article dans une revue hal-03014825v2
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Trapping Dipolar Exciton Fluids in GaN/(AlGa)N Nanostructures

François Chiaruttini , Thierry Guillet , Christelle Brimont , Benoit Jouault , Pierre Lefebvre
Nano Letters, 2019, 19 (8), pp.4911-4918. ⟨10.1021/acs.nanolett.9b00914⟩
Article dans une revue hal-02272702v1
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Switching of exciton character in double InGaN/GaN quantum wells

T. Suski , G Staszczak , K P Korona , P. Lefebvre , E. Monroy
Physical Review B, 2018, 98, ⟨10.1103/PhysRevB.98.165302⟩
Article dans une revue hal-01891681v1
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Room-Temperature Transport of Indirect Excitons in (Al,Ga)N/GaN Quantum Wells

Fedor Fedichkin , Thierry Guillet , Pierre Valvin , Benoit Jouault , Christelle Brimont
Physical Review Applied, 2016, 6 (1), pp.014011. ⟨10.1103/PhysRevApplied.6.014011⟩
Article dans une revue hal-01353893v2
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Picosecond dynamics of free and bound excitons in doped diamond.

Julien Barjon , Pierre Valvin , Christelle Brimont , Pierre Lefebvre , Ovidiu Brinza
Physical Review B, 2016, 93 (11), pp.115202. ⟨10.1103/PhysRevB.93.115202⟩
Article dans une revue hal-01287753v1
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Transport of indirect excitons in ZnO quantum wells.

Yuliya Kuznetsova , Fedor Fedichkin , Peristera Andreakou , Eric V. Calman , L. V. Butov
Optics Letters, 2015, 40 (15), pp.3667-3670. ⟨10.1364/OL.40.003667⟩
Article dans une revue hal-01181619v1
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Transport of dipolar excitons in (Al,Ga)N/GaN quantum wells.

Fedor Fedichkin , Peristera Andreakou , Benoit Jouault , Maria Vladimirova , Thierry Guillet
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2015, 91 (20), pp.205424. ⟨10.1103/PhysRevB.91.205424⟩
Article dans une revue hal-01154792v1

Light-Emitting-Diodes based on ordered InGaN nanocolumns emitting in the blue, green and yellow spectral range.

Ana Bengoechea-Encabo , Steven Albert , D. Lopez-Romero , Pierre Lefebvre , Francesca Barbagini
Nanotechnology, 2014, 25 (43), pp.435203. ⟨10.1088/0957-4484/25/43/435203⟩
Article dans une revue hal-01073992v1

VIS-UV ZnCdO/ZnO multiple quantum well nanowires and the quantification of Cd diffusion.

Manuel Lopez-Ponce , A. Nakamura , M. Suzuki , J. Temmyo , S. Agouram
Nanotechnology, 2014, 25, pp.255202. ⟨10.1088/0957-4484/25/25/255202⟩
Article dans une revue hal-01009919v1
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Sub-meV linewidth in GaN nanowire ensembles: Absence of surface excitons due to the field ionization of donors

Pierre Corfdir , Johannes K. Zettler , Christian Hauswald , Sergio Fernandez-Garrido , Oliver Brandt
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2014, 90 (20), pp.205301. ⟨10.1103/PhysRevB.90.205301⟩
Article dans une revue hal-01083398v1
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Optical properties and microstructure of 2.02-3.30 eV ZnCdO nanowires: Effect of thermal annealing

Manuel Lopez-Ponce , A. Hierro , J.-M. Ulloa , Pierre Lefebvre , E. Munoz
Applied Physics Letters, 2013, 102, pp.143103. ⟨10.1063/1.4799491⟩
Article dans une revue hal-00809307v1

Three-dimensional magneto-photoluminescence as a probe of the electronic properties of crystal phase quantum disks in GaAs nanowires.

Pierre Corfdir , Barbara van Hattem , Emanuele Uccelli , Sonia Conesa-Boj , Pierre Lefebvre
Nano Letters, 2013, 13 (11), pp.5303. ⟨10.1021/nl4028186⟩
Article dans une revue hal-00904133v1
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Oxygen photo-adsorption related quenching of photoluminescence in group-III nitride nanocolumns.

Pierre Lefebvre , Steven Albert , Jelena Ristic , S. Fernandez-Garrido , J. Grandal
Superlattices and Microstructures, 2012, 52, pp.165. ⟨10.1016/j.spmi.2012.05.001⟩
Article dans une revue hal-00704495v1
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Selective area growth and characterization of InGaN nano-disks implemented in GaN nanocolumns with different top morphologies.

Steven Albert , Ana Bengoechea-Encabo , Pierre Lefebvre , Francesca Barbagini , M.A. Sanchez-Garcia
Applied Physics Letters, 2012, 100, pp.231906. ⟨10.1063/1.4728115⟩
Article dans une revue hal-00704507v1
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Thermal carrier emission and nonradiative recombinations in nonpolar(Al,Ga)N/GaN quantum wells grown on bulk GaN.

Pierre Corfdir , Amélie Dussaigne , H. Teisseyre , T. Suski , Izabella Grzegory
Journal of Applied Physics, 2012, 111, pp.033517. ⟨10.1063/1.3681816⟩
Article dans une revue hal-00677582v1
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Impact of biexcitons on the relaxation mechanisms of polaritons in III-nitride based multi-quantum well microcavities.

P. Corfdir , J. Levrat , G. Rossbach , R. Butté , E. Feltin
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2012, 85 (24), pp.245308. ⟨10.1103/PhysRevB.85.245308⟩
Article dans une revue hal-00708277v1

Role of the dielectric mismatch on the properties of donors in semiconductor nanostructures bounded by air.

Pierre Corfdir , Pierre Lefebvre
Journal of Applied Physics, 2012, 112, pp.106104. ⟨10.1063/1.4765031⟩
Article dans une revue hal-00758583v1
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Importance of excitonic effects and the question of internal electric fields in stacking faults and crystal phase quantum discs: the model-case of GaN.

Pierre Corfdir , Pierre Lefebvre
Journal of Applied Physics, 2012, 112 (5), pp.053512. ⟨10.1063/1.4749789⟩
Article dans une revue hal-00750406v1
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Intrinsic dynamics of weakly and strongly confined excitons in nonpolar nitride-based heterostructures.

Pierre Corfdir , J. Levrat , Amélie Dussaigne , Pierre Lefebvre , H. Teisseyre
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 83 (24), pp.245326. ⟨10.1103/PhysRevB.83.245326⟩
Article dans une revue hal-00631188v1
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Emission control of InGaN nanocolumns grown by molecular-beam epitaxy on Si(111) substrates.

Steven Albert , Ana Bengoechea-Encabo , Pierre Lefebvre , M.A. Sanchez-Garcia , E. Calleja
Applied Physics Letters, 2011, 99, pp.131108. ⟨10.1063/1.3644986⟩
Article dans une revue hal-00631167v1

Radiative defects in GaN nanocolumns: Correlation with growth conditions and sample morphology.

Pierre Lefebvre , S. Fernandez-Garrido , J. Grandal , J. Ristic , M.A. Sanchez-Garcia
Applied Physics Letters, 2011, 98 (8), pp.083104. ⟨10.1063/1.3556643⟩
Article dans une revue hal-00631205v1
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Exciton recombination dynamics in a-plane (Al,Ga)N/GaN quantum wells probed by picosecond photo and cathodoluminescence.

P. Corfdir , Pierre Lefebvre , Laurent Balet , Samuel Sonderegger , Amélie Dussaigne
Journal of Applied Physics, 2010, 107 (4), pp.043524. ⟨10.1063/1.3305336⟩
Article dans une revue hal-00632548v1

One-dimensional exciton luminescence induced by extended defects in nonpolar GaN/(Al,Ga)N quantum wells.

Amélie Dussaigne , Pierre Corfdir , Jacques Levrat , T Zhu , Denis Martin
Semiconductor Science and Technology, 2010, 26 (2), pp.025012. ⟨10.1088/0268-1242/26/2/025012⟩
Article dans une revue hal-01260924v1

Exciton localization on basal stacking faults in a-plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy

P. Corfdir , Pierre Lefebvre , J. Levrat , Amélie Dussaigne , Jean-Daniel Ganière
Journal of Applied Physics, 2009, 105, pp.043102. ⟨10.1063/1.3075596⟩
Article dans une revue hal-00390006v1

Time-resolved spectroscopy on GaN nanocolumns grown by plasma assisted molecular beam epitaxy on Si substrates

P. Corfdir , Pierre Lefebvre , J. Ristic , Pierre Valvin , E. Calleja
Journal of Applied Physics, 2009, 105, pp.013113. ⟨10.1063/1.3062742⟩
Article dans une revue hal-00390003v1
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Electron localization by a donor in the vicinity of a basal stacking fault in GaN.

P. Corfdir , Pierre Lefebvre , J. Ristic , Jean-Daniel Ganière , Benoit Deveaud-Plédran
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2009, 80 (15), pp.153309. ⟨10.1103/PhysRevB.80.153309⟩
Article dans une revue hal-00632552v1

Exciton dynamics involving basal stacking faults in a-plane GaN studied by low-temperature time-resolved cathodoluminescence.

P. Corfdir , J. Ristic , Pierre Lefebvre , Amélie Dussaigne , D. Martin
Applied Physics Letters, 2009, 94, pp.201115. ⟨10.1063/1.3142396⟩
Article dans une revue hal-00391736v1
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Polarized emission of GaN/AlN quantum dots : single dot spectroscopy and symmetry-based theory

Richard Bardoux , Thierry Guillet , B. Gil , P. Lefebvre , T. Bretagnon
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2008, 77, pp.235315. ⟨10.1103/PhysRevB.77.235315⟩
Article dans une revue hal-00261181v3

Optical properties of GaN/AlN quantum dots

Pierre Lefebvre , B. Gayral
Comptes Rendus. Physique, 2008, 9, pp.816. ⟨10.1016/j.crhy.2008.10.008⟩
Article dans une revue hal-00389996v1
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Comparison of strong coupling regimes in bulk GaAs, GaN and ZnO semiconductor microcavities

Stéphane Faure , T. Guillet , P. Lefebvre , T. Bretagnon , B. Gil
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2008, 78, pp.235323. ⟨10.1103/PhysRevB.78.235323⟩
Article dans une revue hal-00327759v1

Polarized emission from GaN/AlN quantum dots: Single-dot spectroscopy and symmetry-based theory;

Richard Bardoux , Thierry Guillet , Bernard Gil , Pierre Lefebvre , Thierry Bretagnon
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2008, 77 (23), pp.235315. ⟨10.1103/PhysRevB.77.235315⟩
Article dans une revue hal-01220150v1

Barrier composition dependence of the internal electric field in ZnO∕Zn1−xMgxO quantum wells.

Thierry Bretagnon , Pierre Lefebvre , Thierry Guillet , Thierry Taliercio , Bernard Gil
Applied Physics Letters, 2007, 90 (20), pp.201912. ⟨10.1063/1.2740576⟩
Article dans une revue hal-01304724v1

Investigation of Non-Radiative Processes in InAs/(Ga,In)(N,As) Quantum Dots.

Maxime Hugues , Mirja Richter , Jean-Michel Chauveau , Benjamin Damilano , Jean-Yves Duboz
Japanese Journal of Applied Physics, part 2 : Letters, 2007, 46 (14), pp.L317. ⟨10.1143/JJAP.46.L317⟩
Article dans une revue hal-01304760v1

Contribution of long lived metastable states to the PL of InP dots in indirect band-gap barrier layers

Robert Seguin , Thierry Guillet , T. Taliercio , P. Lefebvre , T. Bretagnon
European Physical Journal: Applied Physics, 2007, 37, pp.15. ⟨10.1051/epjap:2007006⟩
Article dans une revue hal-00389970v1

Time-resolved photoluminescence and optically stimulated luminescence measurements of picosecond-excited SrS:Ce,Sm phosphor

F. Ravotti , D. Benoit , P. Lefèbvre , P. Valvin , J.-R. Vaillé
Journal of Applied Physics, 2007, 102 (12), pp.123102. ⟨10.1063/1.2822474⟩
Article dans une revue hal-00327469v1
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Spin-exchange interaction in ZnO-based quantum wells.

Bernard Gil , Pierre Lefebvre , Thierry Bretagnon , Thierry Guillet , J.A. Sans
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2006, 74 (15), pp.153302. ⟨10.1103/PhysRevB.74.153302⟩
Article dans une revue hal-01304535v1

Strong potential profile fluctuations and effective localization process in InGaN∕GaN multiple quantum wells grown on {10‐1m} faceted surface GaN template.

Soufien Haffouz , Hao Tang , J.A. Bardwell , Pierre Lefebvre , Thierry Bretagnon
Journal of Applied Physics, 2006, 100 (1), pp.013528. ⟨10.1063/1.2214211⟩
Article dans une revue hal-01304537v1

Radiative lifetime of a single electron-hole pair in GaN∕AlN quantum dots.

Thierry Bretagnon , Pierre Lefebvre , Pierre Valvin , Richard Bardoux , Thierry Guillet
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2006, 73 (11), pp.113304. ⟨10.1103/PhysRevB.73.113304⟩
Article dans une revue hal-01304534v1

Photoluminescence of single GaN∕AlN hexagonal quantum dots on Si(111): Spectral diffusion effects.

Richard Bardoux , Thierry Guillet , Pierre Lefebvre , Thierry Taliercio , Thierry Bretagnon
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2006, 74 (19), pp.195319. ⟨10.1103/PhysRevB.74.195319⟩
Article dans une revue hal-01304536v1

Efficient radiative recombination and potential profile fluctuations in low-dislocation InGaN∕GaN multiple quantum wells on bulk GaN substrates.

G. Franssen , S. Grzanka , Robert Czernecki , Tadeusz Suski , L Marona
Journal of Applied Physics, 2005, 97 (10), pp.103507. ⟨10.1063/1.1897066⟩
Article dans une revue hal-01304034v1

Localization Effects in InGaN/GaN Double Heterostructure Laser Diode Structures Grown on Bulk GaN Crystals.

Robert Czernecki , G. Franssen , Tadeusz Suski , T. Swietlik , J. Borysiuk
Japanese Journal of Applied Physics, 2005, 44 (Part1 - N°10), pp.7244. ⟨10.1143/JJAP.44.7244⟩
Article dans une revue hal-01304041v1

Internal electric field in wurtzite ZnO/Zn0.78Mg0.22O quantum wells.

Christian Morhain , Thierry Bretagnon , Pierre Lefebvre , X Tang , Pierre Valvin
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2005, 72 (24), pp.241305. ⟨10.1103/PhysRevB.72.241305⟩
Article dans une revue hal-01304048v1

Photoluminescence energy and linewidth in GaN/AlN stackings of quantum dot planes.

Sokratis Kalliakos , Thierry Bretagnon , Pierre Lefebvre , Thierry Taliercio , Bernard Gil
Journal of Applied Physics, 2004, 96 (1), pp.180. ⟨10.1063/1.1753085⟩
Article dans une revue hal-01303942v1

From GaAs:N to oversaturated GaAsN: Analysis of the band-gap reduction

T. Taliercio , R. Intartaglia , B. Gil , P. Lefèbvre , T. Bretagnon
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2004, 69 (7), pp.073303.1-073303.4. ⟨10.1103/PhysRevB.69.073303⟩
Article dans une revue hal-00330627v1

Observation and modeling of the time-dependent descreening of internal electric field in a wurtzite GaN/Al0.15Ga0.85N quantum well after high photoexcitation.

Pierre Lefebvre , Sokratis Kalliakos , Thierry Bretagnon , Pierre Valvin , Thierry Taliercio
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2004, 69 (3), pp.035307. ⟨10.1103/PhysRevB.69.035307⟩
Article dans une revue hal-01303935v1

Isoelectronic traps in heavily doped GaAs:(In,N)

R. Intartaglia , T. Taliercio , P. Valvin , B. Gil , P. Lefèbvre
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2003, 68 (23), pp.235202.1-235202.5. ⟨10.1103/PhysRevB.68.235202⟩
Article dans une revue hal-00327975v1

Nonlinear behavior of photoabsorption in hexagonal nitride quantum wells due to free carrier screening of the internal fields.

Sokratis Kalliakos , Pierre Lefebvre , Thierry Taliercio
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2003, 67 (20), pp.205307. ⟨10.1103/PhysRevB.67.205307⟩
Article dans une revue hal-01303911v1

Time dependence of the photoluminescence of GaN/AlN quantum dots under high photoexcitation.

Thierry Bretagnon , Sokratis Kalliakos , Pierre Lefebvre , Pierre Valvin , Bernard Gil
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2003, 68 (20), pp.205301. ⟨10.1103/PhysRevB.68.205301⟩
Article dans une revue hal-01303926v1

Donor-acceptor-like behavior of electron-hole pair recombinations in low-dimensional (Ga,In)N/GaN systems.

Aurélien Morel , Pierre Lefebvre , Sokratis Kalliakos , Thierry Taliercio , Thierry Bretagnon
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2003, 68 (4), pp.045331. ⟨10.1103/PhysRevB.68.045331⟩
Article dans une revue hal-01303919v1

Determination of built-in electric fields in quaternary InAlGaN heterostructures.

Henryk Teisseyre , Tadeusz Suski , S. Lepkowsky , Stéphanie Anceau , Piotr Perlin
Applied Physics Letters, 2003, 82 (10), pp.1541. ⟨10.1063/1.1559948⟩
Article dans une revue hal-01303282v1

Time-resolved spectroscopy of (Al,Ga,In)N based quantum wells: Localization effects and effective reduction of internal electric fields.

Pierre Lefebvre , Stéphanie Anceau , Pierre Valvin , Thierry Taliercio , Leszek Konczewicz
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2002, 66 (19), pp.195330. ⟨10.1103/PhysRevB.66.195330⟩
Article dans une revue hal-01303261v1

Micro Epitaxial lateral overgrowth of GaN/sapphire by Metal Organic Vapour Phase Epitaxy.

Eric Frayssinet , Bernard Beaumont , Jean-Pierre Faurie , Pierre Gibart , Zsolt Makkai
MRS Internet Journal of Nitride Semiconductor Research, 2002, 7, pp.8
Article dans une revue hal-01303258v1

Large size dependence of exciton-longitudinal-optical-phonon coupling in nitride-based quantum wells and quantum boxes.

Sokratis Kalliakos , Xuebin Zhang , Thierry Taliercio , Pierre Lefebvre , Bernard Gil
Applied Physics Letters, 2002, 80 (3), pp.428. ⟨10.1063/1.1433165⟩
Article dans une revue hal-01303257v1

Effects of GaAlN barriers and of dimensionality on optical recombination processes in InGaN quantum wells and quantum boxes.

Pierre Lefebvre , Thierry Taliercio , Aurélien Morel , Jacques Allègre , Mathieu Gallart
Applied Physics Letters, 2001, 78 (11), pp.1538. ⟨10.1063/1.1352664⟩
Article dans une revue hal-01303205v1

Exclusion principle and screening of excitons in GaN/AlxGa1−xN quantum wells.

Pierre Bigenwald , Alexey Kavokin , Bernard Gil , Pierre Lefebvre
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2001, 63 (3), pp.035315. ⟨10.1103/PhysRevB.63.035315⟩
Article dans une revue hal-01303201v1

Cw and time-resolved spectroscopy in homoepitaxial GaN films and GaN-GaAlN quantum wells grown by molecular beam epitaxy.

Thierry Taliercio , Mathieu Gallart , Pierre Lefebvre , Aurélien Morel , Bernard Gil
Solid State Communications, 2001, 117 (7), pp.445. ⟨10.1016/S0038-1098(00)00475-0⟩
Article dans une revue hal-01302922v1

Carrier relaxation dynamics for As defects in GaN.

Bernard Gil , Aurélien Morel , Thierry Taliercio , Pierre Lefebvre , C.T. Foxon
Applied Physics Letters, 2001, 79 (1), pp.69. ⟨10.1063/1.1380400⟩
Article dans une revue hal-01303208v1

Optical properties of group-III nitride quantum wells and quantum boxes.

Thierry Taliercio , Pierre Lefebvre , Aurélien Morel , Bernard Gil
Journal of Physics: Condensed Matter, 2001, 13 (32), pp.7027. ⟨10.1088/0953-8984/13/32/310⟩
Article dans une revue hal-01303255v1

High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy.

Pierre Lefebvre , Aurélien Morel , Mathieu Gallart , Thierry Taliercio , Jacques Allègre
Applied Physics Letters, 2001, 78 (9), pp.1252. ⟨10.1063/1.1351517⟩
Article dans une revue hal-01303203v1

Influence of electron-phonon interaction on the optical properties of III nitride semiconductors.

Xuebin Zhang , Thierry Taliercio , Sokratis Kalliakos , Pierre Lefebvre
Journal of Physics: Condensed Matter, 2001, 13 (32), pp.7053. ⟨10.1088/0953-8984/13/32/312⟩
Article dans une revue hal-01303256v1

Optical properties of GaN epilayers and GaN/AlGaN quantum wells grown by molecular beam epitaxy on GaN(0001) single crystal substrate.

Nicolas Grandjean , Benjamin Damilano , Jean Massies , Gérard Neu , M Teissere
Journal of Applied Physics, 2000, 88 (1), pp.183. ⟨10.1063/1.373640⟩
Article dans une revue hal-01302893v1

Excitons and Trions Confined on CdTe Nano-Islands: Optical Tuning of the Dielectric Response.

Thierry Taliercio , Pierre Lefebvre , Vincent Calvo , Noël Magnéa , Henry Mathieu
physica status solidi (b), 2000, 220 (2), pp.875. ⟨10.1002/(SICI)1521-3951(200008)220:2<875::AID-PSSB875>3.0.CO;2-W⟩
Article dans une revue hal-01302898v1

Strain effects in GaN epilayers.

Bernard Gil , Pierre Lefebvre , Hadis Morkoc
Comptes Rendus de l'Academie des Sciences. Série IV, Physique, Astronomie, 2000, 1 (1), pp.51. ⟨10.1016/S1296-2147(00)00101-3⟩
Article dans une revue hal-01302886v1

Electron-hole plasma effect on excitons in GaN/AlxGa1−xN quantum wells.

Pierre Bigenwald , Alexey Kavokin , Bernard Gil , Pierre Lefebvre
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2000, 61 (23), pp.15621. ⟨10.1103/PhysRevB.61.15621⟩
Article dans une revue hal-01302903v1

Barrier-width dependence of group-III nitrides quantum-well transition energies.

Mathieu Leroux , Nicolas Grandjean , Jean Massies , Bernard Gil , Pierre Lefebvre
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1999, 60 (3), pp.1496. ⟨10.1103/PhysRevB.60.1496⟩
Article dans une revue hal-01302659v1

Time-resolved photoluminescence as a probe of internal electric fields in GaN-(GaAl)N quantum wells.

Pierre Lefebvre , Jacques Allègre , Bernard Gil , Henry Mathieu , Nicolas Grandjean
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1999, 59 (23), pp.15363. ⟨10.1103/PhysRevB.59.15363⟩
Article dans une revue hal-01302335v1

Observation of long-lived oblique excitons in GaN-AlGaN multiple quantum wells

B. Gil , P. Lefebvre , J. Allègre , H. Mathieu , N. Grandjean
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1999, 59 (15), pp.10246 - 10250. ⟨10.1103/PhysRevB.59.10246⟩
Article dans une revue hal-01756619v1

Photoreflectance investigations of the bowing parameter in AlGaN alloys lattice-matched to GaN.

Tj Ochalski , Bernard Gil , Pierre Lefebvre , Nicolas Grandjean , Mathieu Leroux
Applied Physics Letters, 1999, 74 (22), pp.3353. ⟨10.1063/1.123342⟩
Article dans une revue hal-01302666v1

Photoreflectance spectroscopy as a powerful tool for the investigation of GaN-AlGaN quantum well structures

Tj Ochalski , Bernard Gil , Pierre Lefebvre , N. Grandjean , J. Massies
Solid State Communications, 1999, 109, pp.567-571
Article dans une revue hal-00546569v1

Observation of long-lived oblique excitons in GaN-AlGaN multiple quantum wells.

Bernard Gil , Pierre Lefebvre , Jacques Allègre , Henry Mathieu , Nicolas Grandjean
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1999, 59 (15), pp.10246. ⟨10.1103/PhysRevB.59.10246⟩
Article dans une revue hal-01302655v1

Recombination dynamics of free and localized excitons in GaN/Ga0.93Al0.07N quantum wells

Pierre Lefebvre , Jacques Allègre , Bernard Gil , Alexei Kavokin , Henry Mathieu
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1998, 57 (16), pp.R9447. ⟨10.1103/PhysRevB.57.R9447⟩
Article dans une revue hal-01287782v1

Optical studies of ultrashort-period GaAs/AlAs superlattices grown on (In,Ga)As pseudosubstrate.

Mohammed Rezki , A.M. Vasson , Aime Vasson , Pierre Lefebvre , Vincent Calvo
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1998, 58 (12), pp.R7540. ⟨10.1103/PhysRevB.58.R7540⟩
Article dans une revue hal-01288966v1

Charged excitons trapped on monomolecular CdTe islands in wide ZnTe-(Zn,Mg)Te quantum wells.

Thierry Taliercio , Pierre Lefebvre , Vincent Calvo , Denis Scalbert , Noël Magnéa
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1998, 58 (23), pp.15408. ⟨10.1103/PhysRevB.58.15408⟩
Article dans une revue hal-01302334v1

Quantum confined Stark effect due to built-in internal polarization fields in (Al,Ga)N/GaN quantum wells.

Mathieu Leroux , Nicolas Grandjean , M. Laügt , Jean Massies , Bernard Gil
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1998, 58 (20), pp.R13371. ⟨10.1103/PhysRevB.58.R13371⟩
Article dans une revue hal-01291688v1

Optical properties versus growth conditions of CdTe submonolayers inserted in ZnTe quantum wells.

Vincent Calvo , Noël Magnéa , Thierry Taliercio , Pierre Lefebvre , Jacques Allègre
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1998, 58 (23), pp.15736. ⟨10.1103/PhysRevB.58.15736⟩
Article dans une revue hal-01302330v1

Optical absorption of type-II superlattices.

Stephan Glutsch , Pierre Lefebvre , Daniel S. Chemla
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1997, 55 (23), pp.15786. ⟨10.1103/PhysRevB.55.15786⟩
Article dans une revue hal-01237153v1

Distinct center-of-mass quantization of light-hole and heavy-hole excitons in wide ZnTe-(Zn,Mg)Te quantum wells.

Pierre Lefebvre , Vincent Calvo , Noël Magnéa , Thierry Taliercio , Jacques Allègre
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1997, 56 (16), pp.R10040. ⟨10.1103/PhysRevB.56.R10040⟩
Article dans une revue hal-01260899v1

Dynamics of photoluminescence in medium-size CdSe quantum crystallites.

Pierre Lefebvre , Henry Mathieu , Jacques Allègre , Tristan Richard , Anne Combette-Roos
Semiconductor Science and Technology, 1997, 12 (8), pp.958. ⟨10.1088/0268-1242/12/8/005⟩
Article dans une revue hal-01260896v1

Analytical model for the refractive index in quantum wells derived from the complex dielectric constant of Wannier excitons in noninteger dimensions.

Christian Tanguy , Pierre Lefebvre , Henry Mathieu , R.J. Elliott
Journal of Applied Physics, 1997, 82 (2), pp.798. ⟨10.1063/1.365580⟩
Article dans une revue hal-01260885v1

Optical investigation of CdTe monomolecular islands in wide ZnTe/(Zn,Mg)Te quantum wells: Evidence of a vertical self-ordering.

Pierre Lefebvre , Vincent Calvo , Noël Magnéa , Thierry Taliercio , Jacques Allègre
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1997, 56 (7), pp.3907. ⟨10.1103/PhysRevB.56.3907⟩
Article dans une revue hal-01260891v1

Effects of finite spin-orbit splitting on optical properties of spherical semiconductor quantum dots.

Tristan Richard , Pierre Lefebvre , Henry Mathieu , Jacques Allègre
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1996, 53 (11), pp.7287. ⟨10.1103/PhysRevB.53.7287⟩
Article dans une revue hal-01179203v1

Evidence of the ordered growth of monomolecular ZnTe islands in CdTe/(Cd,Zn)Te quantum wells on a nominal (001) surface.

Vincent Calvo , Pierre Lefebvre , Jacques Allègre , A. Bellabchara , Henry Mathieu
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1996, 53 (24), pp.R16164. ⟨10.1103/PhysRevB.53.R16164⟩
Article dans une revue hal-01233762v1

Influence of spin-orbit split-off band on optical properties of spherical semiconductor nanocrystals. The case of CdTe.

Pierre Lefebvre , Tristan Richard , Henry Mathieu , Jacques Allègre
Solid State Communications, 1996, 98 (4), pp.303. ⟨10.1016/0038-1098(96)00044-0⟩
Article dans une revue hal-01233756v1

Quantum wells with zero valence-band offset: Drastic enhancement of forbidden excitonic transitions.

A.V. Kavokin , M.A. Kaliteevski , S.V Goupalov , J.D. Berger , O. Lyngnes
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1996, 54 (16), pp.R11078. ⟨10.1103/PhysRevB.54.R11078⟩
Article dans une revue hal-01233781v1

Measurement of the optical band gap and crystal-field splitting in wurtzite CdTe.

Pierre Lefebvre , Tristan Richard , Jacques Allègre , Henry Mathieu , Anne Combette-Roos
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1996, 53 (23), pp.15440. ⟨10.1103/PhysRevB.53.15440⟩
Article dans une revue hal-01179205v1

Quantum confinement effects of CdS nanocrystals in a sodium borosilicate glass prepared by the sol-gel process.

Henry Mathieu , Tristan Richard , Jacques Allègre , Pierre Lefebvre , Gérald Arnaud
Journal of Applied Physics, 1995, 77 (1), pp.287. ⟨10.1063/1.359389⟩
Article dans une revue hal-01178746v1

Confined excitons in semiconductors: Correlation between binding energy and spectral absorption shape.

Pierre Lefebvre , Philippe Christol , Henry Mathieu , Glutsch Stephan
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1995, 52 (8), pp.5756. ⟨10.1103/PhysRevB.52.5756⟩
Article dans une revue hal-01178748v1

A single equation describes excitonic absorption spectra in all quantum-sized semiconductors.

Philippe Christol , Pierre Lefebvre , Henry Mathieu
IEEE Journal of Quantum Electronics, 1994, 30 (10), pp.2287. ⟨10.1109/3.328597⟩
Article dans une revue hal-01176124v1

Improved modeling of excitons in type-II semiconductor heterostructures by use of a three-dimensional variational function.

A. Bellabchara , Pierre Lefebvre , Philippe Christol , Henry Mathieu
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1994, 50 (16), pp.11840. ⟨10.1103/PhysRevB.50.11840⟩
Article dans une revue hal-01176125v1
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Low dimensionality semiconductors: modelling of excitons via a fractional-dimensional space

Philippe Christol , P. Lefebvre , H. Mathieu
Journal de Physique III, 1993, 3 (9), pp.1783-1789. ⟨10.1051/jp3:1993237⟩
Article dans une revue jpa-00249040v1
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General formalism for excitonic absorption edges in confined systems with arbitrary dimensionality

P. Lefebvre , Philippe Christol , H. Mathieu
Journal de Physique IV Proceedings, 1993, 03 (C5), pp.C5-377-C5-380. ⟨10.1051/jp4:1993579⟩
Article dans une revue jpa-00251666v1

Unified formulation of excitonic absorption spectra of semiconductor quantum wells, superlattices, and quantum wires.

Pierre Lefebvre , Philippe Christol , Henry Mathieu
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1993, 48 (23), pp.17308. ⟨10.1103/PhysRevB.48.17308⟩
Article dans une revue hal-01176109v1

Uniaxial-stress investigation of asymmetrical GaAs-(Ga,Al)As double quantum wells.

Bernard Gil , Pierre Lefebvre , Bonnel Philippe , Henry Mathieu , Christiane Deparis
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1993, 47 (4), pp.1954. ⟨10.1103/PhysRevB.47.1954⟩
Article dans une revue hal-01176102v1

Fractional‐dimensional calculation of exciton binding energies in semiconductor quantum wells and quantum‐well wires.

Philippe Christol , Pierre Lefebvre , Henry Mathieu
Journal of Applied Physics, 1993, 74 (9), pp.5626. ⟨10.1063/1.354224⟩
Article dans une revue hal-01176107v1

Excitons in semiconductor quantum wells: A straightforward analytical calculation

Henry Mathieu , Pierre Lefebvre , Philippe Christol
Journal of Applied Physics, 1992, 72 (1), pp.300. ⟨10.1063/1.352137⟩
Article dans une revue hal-01175835v1

Photoreflectance and piezophotoreflectance studies of strained-layer InxGa1-xAs quantum wells.

Arnaud Gérald , Jacques Allègre , Pierre Lefebvre , Henry Mathieu , L.K. Howard
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1992, 46 (23), pp.15290. ⟨10.1103/PhysRevB.46.15290⟩
Article dans une revue hal-01176053v1

Optical properties of InGaAs films embedded in plasma etched InP wells.

A. Georgakilas , Christou A. , Pierre Lefebvre , Jacques Allègre , K. Zekentes
Applied Physics Letters, 1992, 61 (7), pp.798. ⟨10.1063/1.107805⟩
Article dans une revue hal-01176049v1

Excitons in semiconductor superlattices: Heuristic description of the transfer between Wannier-like and Frenkel-like regimes.

Pierre Lefebvre , Philippe Christol , Henry Mathieu
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1992, 46 (20), pp.13603. ⟨10.1103/PhysRevB.46.13603⟩
Article dans une revue hal-01176050v1

Influence of the spin-orbit split-off valence band in InGaAs/AlGaAs strained-layer quantum wells.

Bernard Gil , L.K. Howard , David J. Dunstan , Boring Philippe , Pierre Lefebvre
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1992, 45 (7), pp.3906. ⟨10.1103/PhysRevB.45.3906⟩
Article dans une revue hal-01175827v1

Simple analytical method for calculating exciton binding energies in semiconductor quantum wells

Henry Mathieu , Pierre Lefebvre , Philippe Christol
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1992, 46 (7), pp.4092. ⟨10.1103/PhysRevB.46.4092⟩
Article dans une revue hal-01175849v1

Resonant tunneling via stress-induced valence-band mixings in GaAs-(Ga,Al)As asymmetrical double quantum wells

Pierre Lefebvre , Bonnel Philippe , Bernard Gil , Henry Mathieu
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1991, 44 (11), pp.5635. ⟨10.1103/PhysRevB.44.5635⟩
Article dans une revue hal-01175824v1

Valence-band coupling in thin (Ga,In)As-AlAs strained quantum wells.

Bernard Gil , Pierre Lefebvre , P. Boring , Karen J. Moore , Geoffrey Duggan
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1991, 44 (4), pp.1942. ⟨10.1103/PhysRevB.44.1942⟩
Article dans une revue hal-01175678v1

Electronic structure of (1 1 3)-grown GaAs-(GaAl)As single quantum wells under biaxial strain fields.

Youness El Khalifi , Pierre Lefebvre , Jacques Allègre , Bernard Gil , Henry Mathieu
Solid State Communications, 1990, 75 (8), pp.677. ⟨10.1016/0038-1098(90)90223-X⟩
Article dans une revue hal-01175668v1

Reflectance study of inter-well couplings in GaAs-(Ga,Al)As double quantum wells.

Bonnel Philippe , Pierre Lefebvre , Bernard Gil , Henry Mathieu , Christiane Deparis
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1990, 42 (6), pp.3435. ⟨10.1103/PhysRevB.42.3435⟩
Article dans une revue hal-01175677v1

Symmetry of conduction states for GaAs-AlAs type II superlattices from uniaxial stress.

Pierre Lefebvre , Bernard Gil , Henry Mathieu , Planel Richard
Physical Review B: Condensed Matter (1978-1997), 1989, 39 (8), pp.5550. ⟨10.1103/PhysRevB.39.5550⟩
Article dans une revue hal-01175665v1

Piezospectroscopy of GaAs-AlAs superlattices.

Pierre Lefebvre , Bernard Gil , Henry Mathieu , Planel Richard
Physical Review B: Condensed Matter (1978-1997), 1989, 40 (11), pp.7802. ⟨10.1103/PhysRevB.40.7802⟩
Article dans une revue hal-01175666v1

Band offset and lattice mismatch effects in strained-layer CdTe-ZnTe superlattices.

Henry Mathieu , Jacques Allègre , A Chatt , Pierre Lefebvre , Jp Faurie
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1988, 38 (11), pp.9. ⟨10.1103/PhysRevB.38.7740⟩
Article dans une revue hal-01175590v1
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Magnetoexcitons in a narrow single GaAs-Ga0.5Al0.5As quantum well grown by Molecular Beam Epitaxy.

Pierre Lefebvre , Bernard Gil , J.P Lascaray , Henry Mathieu , Dieter Bimberg
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1988, 37 (8), pp.4171. ⟨10.1103/PhysRevB.37.4171⟩
Article dans une revue hal-01175578v1

Reflectance spectroscopy on GaAs-Ga0.5Al0.5As single quantum wells, under in-plane uni¬axial stress, at liquid helium temperature.

Bernard Gil , Pierre Lefebvre , Henry Mathieu , G. Platero , M. Altarelli
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1988, 38 (2), pp.6. ⟨10.1103/PhysRevB.38.1215⟩
Article dans une revue hal-01175583v1

Exchange effects on excitons in quantum wells.

Yong Chen , Bernard Gil , Pierre Lefebvre , Henry Mathieu
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1988, 37 (11), pp.4. ⟨10.1103/PhysRevB.37.6429⟩
Article dans une revue hal-01175568v1

Effect of hydrostatic pressure on GaAs-Ga1-xAlxAs microstructures.

Pierre Lefebvre , Bernard Gil , Henry Mathieu
Physical Review B: Condensed Matter (1978-1997), 1987, 35 (11), pp.5. ⟨10.1103/PhysRevB.35.5630⟩
Article dans une revue hal-01175550v1
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Microstructures III-V sous pression hydrostatique

P. Lefebvre , B. Gil , H. Mathieu
Revue de Physique Appliquée, 1987, 22 (8), pp.859-866. ⟨10.1051/rphysap:01987002208085900⟩
Article dans une revue jpa-00245624v1

Differential spectroscopy of GaAs-Ga1-xAlxAs quantum wells : an unambiguous identifica¬tion of light-hole and heavy-hole states.

Henry Mathieu , Pierre Lefebvre , Jacques Allègre , Bernard Gil , A. Regreny
Physical Review B: Condensed Matter (1978-1997), 1987, 36 (12), pp.4. ⟨10.1103/PhysRevB.36.6581⟩
Article dans une revue hal-01175558v1

Nonparabolic behavior of GaSb-AlSb quantum wells under hydrostatic pressure.

Pierre Lefebvre , Bernard Gil , Jacques Allègre , Henry Mathieu , Raisin Claude
Physical Review B: Condensed Matter (1978-1997), 1987, 35 (3), pp.6. ⟨10.1103/PhysRevB.35.1230⟩
Article dans une revue hal-01175485v1

Control Over Dipolar Exciton Fluids in GaN/(AlGa)N Nanostructures

Maria Vladimirova , François Chiaruttini , Thierry Guillet , Christelle Brimont , Benoit Jouault
13th International Conference on Nitride Semiconductors (ICNS-13), Jul 2019, Bellevue, United States
Communication dans un congrès hal-02466858v1

Control over dipolar exciton fluids in GaN/(AlGa)N nanostructures

Maria Vladimirova , François Chiaruttini , Thierry Guillet , Christelle Brimont , Pierre Lefebvre
5th INTERNATIONAL CONFERENCE ON QUANTUM TECHNOLOGIES, Jul 2019, Moscou, Russia
Communication dans un congrès hal-02466887v1

Phase transition of indirect excitons in GaN quantum wells.

Thierry Guillet , François Chiaruttini , Christelle Brimont , Thierry Bretagnon , Laetitia Doyennette
International Workshop on Nitride semiconductors - IWN2018., Nov 2018, Kanazawa, Japan
Communication dans un congrès hal-01910225v1

Trapping dynamics of indirect excitons into electrostatic traps in GaN quantum wells.

Thierry Guillet , François Chiaruttini , Christelle Brimont , Thierry Bretagnon , Laetitia Doyennette
TERAMETANANO-3: Terahertz Emission, Metamaterials and Nanophotonics., Alexey Kavokin - Jerome Tignon - Timothy C. H. Liew - Pavel Belov, Mar 2018, Uxmal, Mexico
Communication dans un congrès hal-01908823v1

Electrostatic trapping of indirect excitons in GaN/AlGaN quantum wells.

François Chiaruttini , Thierry Guillet , Christelle Brimont , Thierry Bretagnon , Laetitia Doyennette
International Conference on the Physics of Semiconductors, Jul 2018, Montpellier, France
Communication dans un congrès hal-01907806v1

Switching of exciton character in double InGaN/GaN quantum wells.

T. Suski , G Staszczak , K Korona , Pierre Lefebvre , E. Monroy
International Workshop on Nitride semiconductors - IWN2018., Nov 2018, Kanazawa, Japan
Communication dans un congrès hal-01908886v1

Indirect Excitons in Group III-Nitride-Based Quantum Wells.

Pierre Lefebvre , Benoit Jouault , Thierry Guillet , Christelle Brimont , Pierre Valvin
CIMTEC 2018 - 14th Intl Conference on Modern Materials and Technologies - 8th Forum on New Materials, Shuji NAKAMURA; University of California; USA (Honorary Chair) Michele MUCCINI; CNR-ISMN; Italy (C, Jun 2018, Pérouse, Italy
Communication dans un congrès hal-01908795v1

On the nature of light emission in polar GaN/(AlGa)N quantum wells

Maria Vladimirova , Thierry Guillet , Christelle Brimont , Denis Scalbert , Benoit Jouault
International Conference on Hybrid Photonics and Materials, Sep 2017, Miconos, Greece
Communication dans un congrès hal-01932705v1

Indirect excitons in polar GaN/(AlGa)N quantum wells

Maria Vladimirova , Thierry Guillet , Christelle Brimont , Pierre Lefebvre , Thierry Bretagnon
International school/colloquium in honor of E. Gross, Oct 2017, St-Petersbourg, Russia
Communication dans un congrès hal-01932812v1

Homogeneous versus inhomogeneous broadening of the photoluminescence in polar GaN/(AlGa)N quantum wells.

Masha Vladimirova , Thierry Guillet , Benoit Jouault , Christelle Brimont , Denis Scalbert
International Conference on Physics of Light-Matter Coupling in Nanostructures – PLMCN18., Sven Höfling, Alexei Kavokin, Jul 2017, Würtzburg, Germany
Communication dans un congrès hal-01908565v1

Transport of indirect excitons in GaN quantum wells.

Thierry Guillet , Benoit Jouault , Fedor Fedichkin , Pierre Lefebvre , Christelle Brimont
International Workshop on Nitride Semiconductors (IWN 2016), Alan Doolittle, Tomás Palacios, Stacia Keller, Siddharth Rajan, Oct 2016, Orlando, United States
Communication dans un congrès hal-01388983v1

Indirect excitons in AlGaN/GaN polar quantum wells.

Maria Vladimirova , Benoit Jouault , Fedor Fedichkin , Thierry Guillet , Christelle Brimont
17th International Conference on Physics of Light-Matter Coupling in Nanostructures – PLMCN17., Yasuhiko Arakawa, Mar 2016, Nara, Japan
Communication dans un congrès hal-01388908v1

Indirect excitons in polar group III nitride quantum wells.

Fedor Fedichkin , Benoit Jouault , Thierry Guillet , Christelle Brimont , Pierre Valvin
8th International Conference on Materials Science and Condensed Matter Physics, Leonid Kulyuk, Sep 2016, Chisinau, Moldova
Communication dans un congrès hal-01388929v1

Searching for Indirect Excitons in Coupled Double InGaN/GaN Quantum Wells

Tadeusz Suski , Grzegorz Staszczak , Pierre Lefebvre , Krzysztof Piotr Korona , Piotr Drozdz
International Workshop on Nitride Semiconductors (IWN 2016), Oct 2016, Orlando, United States
Communication dans un congrès hal-01389862v1

Picosecond dynamics of free and bound excitons in doped diamond

Julien Barjon , Pierre Valvin , Christelle Brimont , Pierre Lefebvre , Ovidiu Brinza
Hasselt Diamond Workshop 2016 - SBDD XXI, Miloš Nesládek, Mar 2016, Hasselt, Belgium. ⟨10.1103/PhysRevB.93.115202⟩
Communication dans un congrès hal-01306898v1

Indirect excitons in wide band gap semiconductors.

Fedor Fedichkin , Benoit Jouault , Thierry Guillet , Christelle Brimont , Pierre Valvin
International School on Nanophotonics and Photovoltaics. INSP 2015., MISP : Mediterranean Institute of Fundamental Physics, Sep 2015, Cefalu, Italy
Communication dans un congrès hal-01389731v1

“Naturally” indirect excitons in wide band-gap semiconductor quantum wells.

Pierre Lefebvre
INDEX International School on the Physics of Indirect Excitons , Guillaume Malpuech; Masha Vladimirova, Mar 2015, Les Houches, France
Communication dans un congrès hal-01305086v1

Transport of Indirect Excitons in Polar GaN/AlGaN Quantum Well Structures Grown on Sapphire and GaN Substrates.

Fedor Fedichkin , Benoit Jouault , Maria Vladimirova , Thierry Guillet , Christelle Brimont
Collective Electronic Excitations in 2D (CEE 2D 2015) - INDEX Conference, François Dubin, ICFO (ES); Vittorio Pellegrini, Scuola Normale Superiore & IIT (IT); Aron Pinczuk, Columbia University (USA); David Ritchie, University of Cambridge (UK); Massimo Rontani, Cnr Nano (IT); Thomas Satzoukidis, Scuola Normale Superiore (IT); Masha Vladimirova, CNRS (FR), Sep 2015, Pise, Italy
Communication dans un congrès hal-01305122v1

Transport of Indirect Excitons in Polar GaN/AlGaN Quantum Wells.

Fedor Fedichkin , Benoit Jouault , Peristera Andreakou , Pierre Valvin , Maria Vladimirova
15th conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN15), Bernard Gil, Jun 2014, Montpellier, France
Communication dans un congrès hal-01305383v1

Impact of surface and internal electrical fields on the properties of donor atoms in GaN nanowires.

Pierre Corfdir , Oliver Brandt , Pierre Lefebvre
International Workshop on Nitride Semiconductors – IWN 2014., Tadeusz Suski; Detlef Hommel, Aug 2014, Wroclaw, Poland
Communication dans un congrès hal-01305403v1

ZnCdO/ZnO multiple quantum well nanowires emitting in the visible.

Manuel Lopez-Ponce , Atsushi Nakamura , M. Suzuki , J. Temmyo , S. Agouram
8th International Workshop on Zinc Oxide and Related Materials - IWZnO 2014., Sep 2014, Niagara Falls, Canada
Communication dans un congrès hal-01305424v1

Transient photoluminescence of aluminum-rich (Al, Ga) N low-dimensional structures

Pierre Lefebvre , Christelle Brimont , Pierre Valvin , Bernard Gil , H. Miyake
International Conference on Nitride Semiconductors – ICNS10., Jaime A. Freitas Jr, Aug 2013, Washington DC, United States. pp.765, ⟨10.1002/pssa.201300505⟩
Communication dans un congrès hal-01021458v1

Spatio-Temporal Dynamical Properties of Naturally Indirect Excitons in Polar Nitride Quantum Wells.

Pierre Lefebvre
European Materials Research Society (E-MRS) Srping Meeting. Symposium L: Group III Nitrides., European Materials Research Society (E-MRS), May 2013, Strasbourg, France
Communication dans un congrès hal-00796426v1

Towards purely radiative recombination at room-temperature in nonpolar AlGaN/GaN quantum wells.

Pierre Corfdir , Amélie Dussaigne , Mehran Shahmohammadi , Henryk Teisseyre , Tadeusz Suski
E-MRS Fall Meeting, Sep 2013, Varsovie, Poland
Communication dans un congrès hal-01907907v1

Towards purely radiative recombination at room-temperature in nonpolar AlGaN/GaN quantum wells

Pierre Corfdir , Amélie Dussaigne , Mehran Shahmohammadi , Henryk Teisseyre , Tadeusz Suski
E-MRS Fall Meeting, European Materials Society, Sep 2013, Varsovie, Poland
Communication dans un congrès hal-01306226v1

Advances on MBE Selective Area Growth of III- Nitride nanostructures: from nanoLEDs to pseudo substrates.

S. Albert , A. Bengoechea-Encabo , F. Barbagini , D. López-Romero , M. A. Sanchez-García
Workshop on Frontier Electronics - WOFE., Chairman: M.Shur - Rensselaer Polytechnic Institute,Troy, NY, USA, Dec 2013, San Juan, Puerto Rico. pp.1450020, ⟨10.1142/S0129156414500207⟩
Communication dans un congrès hal-01081163v1

Purely radiative exciton recombination in (Al,Ga)N/GaN quantum wells grown on the a-facet of GaN crystals.

Pierre Corfdir , Amélie Dussaigne , H. Teisseyre , Tadeusz Suski , Izabella Grzegory
International Workshop on Nitride semiconductors (IWN 2012)., Oct 2012, Sapporo, Japan
Communication dans un congrès hal-00708711v1

Impact of biexcitons on the formation of polariton condensates in III-nitride based multiple quantum well microcavities.

Pierre Corfdir , E. Giraud , J. Levrat , G. Rossbach , R. Butté
International Workshop on Nitride semiconductors (IWN 2012)., Oct 2012, Sapporo, Japan
Communication dans un congrès hal-00708717v1

Excitonic effects in GaN stacking faults and crystal phase quantum wells

Pierre Corfdir , Pierre Lefebvre
UK Semiconductors 2012, Jul 2012, Sheffield, United Kingdom
Communication dans un congrès hal-00708658v1

Purely radiative recombinations and thermal carrier emission in nonpolar (Al,Ga)N/GaN quantum wells.

Pierre Corfdir , Amélie Dussaigne , H. Teisseyre , Tadeusz Suski , Izabella Grzegory
International Conference on the Physics of Semiconductors, Jul 2012, Zürich, Switzerland
Communication dans un congrès hal-00708669v1

Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates

Pierre Corfdir , Amelie Dussaigne , Henryk Teisseyre , Tadeusz Suski , Izabella Grzegory
International Workshop on Nitride semiconductors., Oct 2012, Sapporo, Japan. pp.08JC01, ⟨10.7567/JJAP.52.08JC01⟩
Communication dans un congrès hal-01179181v1

Study of the effect of rapid thermal annealing in high Cd content Zn1-XCdXO nanowires grown by MOCVD.

Manuel Lopez-Ponce , A. Hierro , J.-M. Ulloa , Pierre Lefebvre , E. Muñoz
International Workshop on ZnO and Related Materials., Sep 2012, Nice, France
Communication dans un congrès hal-00708700v1

Analysis and control of emission properties of InGaN-on-GaN nanocolumns grown by molecular-beam epitaxy on Si(111) substrates.

Pierre Lefebvre
SPIE-Photonic West-OPTO. "Gallium Nitride Materials and Devices VII". (Conference 8262)., Jan 2012, San Francisco, United States
Communication dans un congrès hal-00708483v1

Picosecond Time-Resolved Cathodoluminescence to Probe Exciton Dynamics in a-Plane (Al,Ga)N/GaN Quantum Wells.

P. Corfdir , Pierre Lefebvre , Amélie Dussaigne , Laurent Balet , Samuel Sonderegger
Microscopy and Microanalysis 2011, Aug 2011, Nashville, Tennessee., United States. pp.1868-1869, ⟨10.1017/S143192761101021X⟩
Communication dans un congrès hal-00796090v1

Direct observation of biexciton localization dynamics in (Al,Ga)N/GaN multi quantum wells.

Pierre Corfdir , J. Levrat , R. Butté , E. Feltin , J.F. Carlin
38th International Symposium on Compound Semiconductors - ISCS 2011., May 2011, Berlin, Germany
Communication dans un congrès hal-00797375v1

Plasma-assisted MBE growth of III-N nanorods: applications to optoelectronic devices and photovoltaics.

E. Calleja , Ana Bengoechea-Encabo , Steven Albert , M.A. Sanchez-Garcia , Francesca Barbagini
11th International Conference on Light-Matter Coupling in Nanostructures, PLMCN11, Apr 2011, Berlin, Germany
Communication dans un congrès hal-00632240v1

Picosecond Time-Resolved Cathodoluminescence to Probe Exciton Dynamics in GaN and GaN based heterostructures

Pierre Corfdir , Pierre Lefebvre , Amélie Dussaigne , Laurent Balet , Samuel Sonderegger
Cathodo-luminescence 2011. , Oct 2011, Gaithersburg, MD, United States
Communication dans un congrès hal-01306660v1

Efficient phosphor-free, white light emission by using ordered arrays of GaN/InGaN nanocolumnar LEDs grown by Selective Area MBE.

Steven Albert , Ana Bengoechea-Encabo , M.A. Sanchez-Garcia , Francesca Barbagini , E. Calleja
Workshop on Frontier Electronics - WOFE 7, Dec 2011, San Juan, Puerto Rico. pp.1250010, ⟨10.1142/S0129156412500103⟩
Communication dans un congrès hal-00656647v1

Control of the Morphology on Selective Area Growth of GaN Nanocolumns by Rf-Plasma-Assisted MBE.

Ana Bengoechea-Encabo , Steven Albert , Francesca Barbagini , Pierre Lefebvre , M.A. Sanchez-Garcia
9th International Conference on Nitride Semiconductors - ICNS9., Jul 2011, Glasgow, United Kingdom
Communication dans un congrès hal-00631606v1

Emission Control of InGaN Nanocolumns on Si(111) substrates Grown by MBE .

Steven Albert , Pierre Lefebvre , J. Grandal , M.A. Sanchez-Garcia , E. Calleja
9th International Conference on Nitride Semiconductors - ICNS9., Jul 2011, Glasgow, United Kingdom
Communication dans un congrès hal-00631744v1

Biexciton-Assisted Relaxation Mechanisms In III-Nitride Based Multi-Quantum Well Microcavities.

Pierre Corfdir , J. Levrat , G. Rossbach , R. Butté , E. Feltin
9th International Conference on Nitride Semiconductors. ICNS9., Jul 2011, Glasgow, United Kingdom
Communication dans un congrès hal-00631761v1

E-beam nanopatterning for the ordered growth of GaN/InGaN nanorods.

Francesca Barbagini , Ana Bengoechea-Encabo , Steven Albert , Pierre Lefebvre , Javier Martinez
37th International Conference on Micro and Nano Engineering (MNE 2011)., Sep 2011, Berlin, Germany. pp.374, ⟨10.1016/j.mee.2012.07.024⟩
Communication dans un congrès hal-00726087v1

Surface-related optical properties of GaN and InGaN nanocolumns.

Pierre Lefebvre
European Materials Research Society Spring Meeting., May 2011, Nice, France
Communication dans un congrès hal-00631334v1

Selective area growth of GaN nanocolumns by rf-plasma assisted MBE at low temperature and under nitrogen-rich conditions.

Steven Albert , Ana Bengoechea-Encabo , Francesca Barbagini , Pierre Lefebvre , M.A. Sanchez-Garcia
9th International Conference on Nitride Semiconductors - ICNS9., Jul 2011, Glasgow, United Kingdom
Communication dans un congrès hal-00631745v1

MBE growth and characterization of InGaN-based films and nanocolumns on Silicon substrates and GaN templates.

Miguel A. Sanchez-Garcia , Steven Albert , Ana Bengoechea-Encabo , Pierre Lefebvre , E. Calleja
2011 German-Japanese-Spanish Joint Workshop on Frontiers in Photonic and Electronic Materials and Devices, Elias Muñoz, Mar 2011, Grenade, Spain
Communication dans un congrès hal-01306674v1

MBE growth and characterization of InGaN nanocolumns on Silicon substrates.

Steven Albert , Pierre Lefebvre , J. Grandal , M.A. Sanchez-Garcia , E. Calleja
European Materials Research Society Spring Meeting., May 2011, Nice, France
Communication dans un congrès hal-00632236v1

On the spontaneous and ordered growth of III-N nanocolumns: growth on nonpolar substrates and applications to Optoelectronic Devices.

E. Calleja , Ana Bengoechea-Encabo , J. Grandal , S. Fernandez-Garrido , M.A. Sanchez-Garcia
39 th International School and Conference on the Physics of Semiconductors., Jun 2010, Jaszowiec, Poland
Communication dans un congrès hal-00634066v1

Carrier localization and surface effects in InGaN nanocolumns grown by plasma-assisted molecular beam epitaxy.

Pierre Lefebvre , Steven Albert , J. Ristic , M.A. Sanchez-Garcia , E. Calleja
International Workshop on Nitride Semiconductors - IWN 2010, Sep 2010, Tampa, Floride., United States
Communication dans un congrès hal-00633510v1

Distortion of donor properties in III-nitride based nano-scale systems.

Pierre Corfdir , Pierre Lefebvre , Jean-Daniel Ganière , Benoit Deveaud-Plédran
International Workshop on Nitride Semiconductors - IWN 2010, Sep 2010, Tampa, Floride., United States
Communication dans un congrès hal-00633495v1

Novel Picosecond Time-Resolved Cathodoluminescence to Probe Exciton Recombination Dynamics in GaN and GaN Based Heterostructures.

Samuel Sonderegger , P. Corfdir , Laurent Balet , T. Zhu , Amélie Dussaigne
Microscopy and Microanalysis (M&M) 2010, Aug 2010, Portland, United States. pp.500, ⟨10.1017/S1431927610058162⟩
Communication dans un congrès hal-00741055v1

Spontaneous and ordered growth of III-N nanocolumns: growth mechanisms and applications to Optoelectronic Devices.

E. Calleja , Ana Bengoechea-Encabo , J. Grandal , S. Fernandez-Garrido , J. Ristic
International Workshop on Nitride Semiconductors - IWN 2010, Sep 2010, Tampa, Floride., United States
Communication dans un congrès hal-00633516v1

Selective area growth of GaN nanocolumns by rf-plasma-assisted MBE.

Ana Bengoechea-Encabo , J. Grandal , S. Fernandez-Garrido , M.A. Sanchez-Garcia , Francesca Barbagini
16th International Conference on Molecular Beam Epitaxy (MBE 2010), Aug 2010, Berlin, Germany
Communication dans un congrès hal-00633529v1

Time-resolved cathodoluminescence on polychromatic light emitting (In,Ga)N quantum wells grown on (11-22) GaN facets.

Pierre Corfdir , Dobri Simeonov , E. Feltin , J.F. Carlin , Pierre Lefebvre
(10th Int. Workshop on Beam Injection Assessment of Microstructures in Semicond - BIAMS 2010jul. 2010, Jul 2010, Halle, Germany. pp.1394, ⟨10.1002/pssc.201084005⟩
Communication dans un congrès hal-00631325v1

Internal efficiency of LEDs: An application of Quantum Mechanics.

Pierre Lefebvre
ForumLED - Europe 2010, Dec 2010, Lyon, France
Communication dans un congrès hal-00634063v1

Exciton dynamics in a-plane (Al,Ga)N/GaN single quantum wells grown by molecular beam epitaxy on ELO-GaN.

Pierre Corfdir , Pierre Lefebvre , Amélie Dussaigne , Laurent Balet , Samuel Sonderegger
International Workshop on Nitride Semiconductors - IWN 2010, Sep 2010, Tampa, Floride., United States
Communication dans un congrès hal-00633490v1

Low-temperature picosecond time-resolved cathodoluminescence study of localization in a-plane GaN.

Pierre Corfdir , Pierre Lefebvre , J. Ristic , Samuel Sonderegger , Laurent Balet
Int. Conf. on Nitride Semiconductors - ICNS8., Oct 2009, Jeju, South Korea
Communication dans un congrès hal-00797195v1

Effect of the internal electric field on excitonic transitions in ZnO/(Zn,Mg)O quantum wells.

Thierry Bretagnon , Thierry Guillet , Pierre Lefebvre , Bernard Gil , Christian Morhain
9th Physics of Light-Matter Coupling and Nanostructures - PLMCN., Apr 2009, Lecce, Italy
Communication dans un congrès hal-00797192v1

Polarized emission from a single GaN/AlN quantum dot : Experiment and theory

Thierry Guillet , Richard Bardoux , Thierry Bretagnon , Bernard Gil , Pierre Lefebvre
Journées Boîtes Quantiques, Jun 2009, Grenoble, France
Communication dans un congrès hal-00633306v1

Picosecond time-resolved cathodoluminescence to study GaN based materials

Samuel Sonderegger , Pierre Corfdir , Laurent Balet , J. Ristic , Pierre Lefebvre
2nd GCOE International Symposium on Photonics and Electronics Science and Engineering, Mar 2009, Kyoto, Japan
Communication dans un congrès hal-00797197v1

Time-resolved spectroscopy of excitonic transitions in ZnO/(Zn,Mg)O quantum wells grown by MBE

Pierre Lefebvre
14th European Molecular Beam Epitaxy Workshop (Euro-MBE), Mar 2008, Grenade, Spain
Communication dans un congrès hal-00389978v1

Polarized emission from a single GaN/AlN quantum dot : Experiment and theory

Thierry Guillet , Richard Bardoux , B. Gil , T. Bretagnon , P. Lefebvre
International Conference on LightMatter Coupling in Nanostructures (PLMCN8), Apr 2008, Tokyo, Japan
Communication dans un congrès hal-00389909v1

Propriétés optiques de nanostructures à base de ZnO

Pierre Lefebvre
12èmes Journées Nano, Micro et Optoélectroniques, Jun 2008, Saint-Pierre d'Oléron, France
Communication dans un congrès hal-00389974v1

Which quasi-particles in wide band gap bulk microcavities ?

Stéphane Faure , Thierry Guillet , P. Lefebvre , T. Bretagnon , T. Taliercio
8th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN8), Apr 2008, Tokyo, Japan
Communication dans un congrès hal-00388717v1

Time-resolved photoluminescence of GaN nanocolumns grown by molecular beam epitaxy on Si.

P. Corfdir , J. Ristic , Pierre Lefebvre , E. Calleja , Jean-Daniel Ganière
International Workshop on Nitride Semiconductors – IWN08, Oct 2008, Montreux, Switzerland
Communication dans un congrès hal-00390010v1

Polarized emission from a single GaN/AlN quantum dot : Experiment and theory

P. Lefebvre , Thierry Guillet , Richard Bardoux , B. Gil , T. Bretagnon
International Workshop on Nitride Semiconductors (IWN2008), Oct 2008, Montreux, Switzerland
Communication dans un congrès hal-00389910v1

Etude du couplage fort exciton-photon dans les microcavités massives ZnO par photoluminescence

Stéphane Faure , Thierry Guillet , T. Bretagnon , P. Lefebvre , B. Gil
11ème Journées de la Matière Condensée (JMC11), Aug 2008, Strasbourg, France
Communication dans un congrès hal-00389906v1

Emission polarisée d'une boîte quantique unique GaN/AlN : expérience et théorie

Thierry Guillet , Richard Bardoux , B. Gil , P. Lefebvre , T. Bretagnon
11ème Journées de la Matière Condensée, Aug 2008, Strasbourg, France
Communication dans un congrès hal-00389559v1

Internal electric field in ZnO/Zn1-xMgxO in single quantum wells.

Thierry Bretagnon , Stéphane Faure , Thierry Guillet , Pierre Lefebvre , Bernard Gil
Fifth International Workshop on Zinc Oxide and Related Materials., Sep 2008, Ypsilanti, Michigan., United States
Communication dans un congrès hal-00797187v1

Emission properties of basal stacking faults in a-plane gallium nitride

P. Corfdir , Pierre Lefebvre , J. Levrat , Amélie Dussaigne , J. Ristic
9th International Workshop on Beam Injection Assessment of Microstructures in Semiconductors. BIAMS 2008, Jun 2008, Tolède, Spain
Communication dans un congrès hal-00390009v1

Unusual dynamics of time-resolved emission from wide-band gap quantum dots.

Pierre Lefebvre
Workshop on Advances in Physics and Applications of Low-Dimensional Systems, Jul 2007, Brazilia, Brazil
Communication dans un congrès hal-00389998v1

Micro-Photoluminescence of isolated GaN/AlN hexagonal QDs: Role of the trapping dynamics of charges at AlN defects

Richard Bardoux , Pierre Lefebvre , Thierry Guillet , Thierry Bretagnon , Thierry Taliercio
14th European Molecular Beam Epitaxy Workshop (14th Euro-MBE), Mar 2007, Grenade, Spain
Communication dans un congrès hal-01306794v1

Linear polarization of the emission of a single polar GaN/AlN quantum dot

Richard Bardoux , Pierre Lefebvre , Thierry Guillet , Thierry Bretagnon , Thierry Taliercio
7th International Conference of Nitride Semiconductors (ICNS-7) , Sep 2007, Las Vegas, United States
Communication dans un congrès hal-01306799v1

Synthes de nanofils de ZnO dans des matériaux poreux ordonnés: experience et simulation moléculaire

Jean-Claude Tedenac , Aude. Mezy , T. Bretagnon , Benoit Coasne , Corine Gerardin
Matériaux 2006, Nov 2007, Dijon, France
Communication dans un congrès hal-00339577v1

Time-resolved spectroscopy of excitonic transitions in ZnO/(Zn,Mg)O quantum wells grown by MBE.

Pierre Lefebvre
14th Euro-MBE Workshop., Mar 2007, Grenade, Spain
Communication dans un congrès hal-01306409v1

Morphology control of ZnO nanomaterials using double hydrophilis block polymers

Jean-Claude Tedenac , Aude. Mezy , Corine Gerardin , Didier Null Tichit , S. Suwanboon
2007 MRS fall meeting, Nov 2007, Boston, United States. pp.1
Communication dans un congrès hal-00279166v1

Polar and non-polar ZnO/ZnMgO quantum well heterostructures

Christian Morhain , Jean-Michel Chauveau , M. Teisseire , B. Lo , M. Laügt
International Symposium on Blue Lasers and Light Emitting Diodes – ISBLLED06., May 2006, Montpellier, France
Communication dans un congrès hal-01309700v1

Optical properties of quantum nanostructures based on wide band-gap semiconductor compounds.

Pierre Lefebvre
6th French-Japanese Workshop on Nanomaterials. , Mar 2006, Sapporo, Japan
Communication dans un congrès hal-01309482v1

Radiative lifetime in wurtzite GaN/AlN quantum dots.

Richard Bardoux , T. Bretagnon , Thierry Guillet , P. Lefebvre , T. Taliercio
International Symposium on Blue Laser and Light Emitting Diodes (ISBLED06), May 2006, Montpellier, France. pp.183, ⟨10.1002/pssc.200673559⟩
Communication dans un congrès hal-00389911v1

Time-resolved spectroscopy of excitonic transitions in ZnO/(Zn, Mg)O quantum wells

Thierry Guillet , Thierry Bretagnon , Thierry Taliercio , Pierre Lefebvre , Bernard Gil
6th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN 2006), J. Christen, Sep 2006, Magdeburg, Germany. pp.352, ⟨10.1016/j.spmi.2007.03.030⟩
Communication dans un congrès hal-01308666v1

Contrôle de la croissance de nanomatériaux d'oxyde de zinc par des copolymères diblocs hydrophiles.

Aude Mezy , S. Suwanboon , Didier Ravot , Jean-Claude Tedenac , Corine Gérardin
Matériaux 2006, Fédération Française des Matériaux, Nov 2006, Dijon, France
Communication dans un congrès hal-01309706v1

Carrier recombination dynamics and internal electric fields in GaN/AlN self-organized quantum dots.

Pierre Lefebvre , Thierry Bretagnon , Thierry Taliercio , Thierry Guillet , Bernard Gil
6th International Conference on Nitride Semiconductors (ICNS6). , Aug 2006, Brème, Germany
Communication dans un congrès hal-01309937v1

Synthèse de nanofils de ZnO dans des Matériaux Poreux Ordonnés: Experience et Simulation Moléculaire.

Aude Mezy , Jean-Claude Tedenac , Benoit Coasne , S. Suwanboon , Didier Ravot
Matériaux 2006, Fédération Française des Matériaux, Nov 2006, Dijon, France
Communication dans un congrès hal-01309705v1

Study of Sharp Photoluminescence Spectra of Individual GaN/AlN Quantum Dots. Spectral Diffusion Effects.

Richard Bardoux , Thierry Guillet , P. Lefebvre , T. Taliercio , T. Bretagnon
International Workshop on Nitrides Semiconductors (IWN), Oct 2006, Kyoto, Japan
Communication dans un congrès hal-00389908v1

Continuous wave and time resolved spectroscopy of InAsN/GaAsN based quantum dots

Thierry Taliercio , Pierre Valvin , Romuald Intartaglia , Vincent Sallet , J.C. Harmand
5th International Conference on Light–Matter Coupling in Nanostructures (PLMCN5). , Jun 2005, Glasgow, United Kingdom. pp.2598-2603, ⟨10.1002/pssa.200562030⟩
Communication dans un congrès hal-01309747v1

k.P energy band structure of ZnO/Zn1-xMgxO quantum well heterostructures

K. Zitouni , A. Kadri , Pierre Lefebvre , Bernard Gil
E-MRS Spring Meeting, May 2005, Strasbourg, France. pp.91, ⟨10.1016/j.spmi.2005.08.033⟩
Communication dans un congrès hal-00389991v1

Optical properties of ZnO nanorods and nanowires

Aude Mezy , Stéphanie Anceau , T. Bretagnon , Pierre Lefebvre , T. Taliercio
E-MRS Spring Meeting, May 2005, Strasbourg, France. pp.358, ⟨10.1016/j.spmi.2005.08.079⟩
Communication dans un congrès hal-00389990v1

Time resolved photoluminescence of ZnO / (Zn,Mg)O quantum wells. Internal electric field effects.

Thierry Bretagnon , Pierre Valvin , Pierre Lefebvre , Bernard Gil , Christian Morhain
E-MRS Spring Meeting - Symposium G : ZnO and Related Materials., May 2005, Strasbourg, France
Communication dans un congrès hal-01309933v1

Longitudinal-optical phonon broadening due to nitrogen atom incorporation in InGaAsN/GaAs quantum wells

Romuald Intartaglia , Thierry Taliercio , Pierre Valvin , Guilhem Almuneau , Pierre Lefebvre
5th International Conference on Light–Matter Coupling in Nanostructures (PLMCN5)., Jun 2005, Glasgow, United Kingdom. pp.3887, ⟨10.1002/pssc.200562039⟩
Communication dans un congrès hal-01309930v1

Time resolved photoluminescence study of ZnO/(Zn,Mg)O quantum wells

Thierry Bretagnon , Pierre Valvin , Pierre Lefebvre , Bernard Gil , Christian Morhain
International Conference on Materials for Advanced Technologies (ICMAT 2005) Symposium N — ZnO and Related Materials, Jul 2005, Singapour, Singapore. pp.12-15, ⟨10.1016/j.jcrysgro.2005.10.034⟩
Communication dans un congrès hal-01309928v1

Morphology Control of ZnO Nanomaterials using Double Hydrophilic Block Copolymers

Aude Mezy , Didier Ravot , Corine Gerardin , Didier Null Tichit , Jean-Claude Tedenac
MRS Fall Meeting, Dec 2005, Boston, United States. pp.Rb15-05.1
Communication dans un congrès hal-00389989v1

Enhancement of localization and confinement effects in quaternary group-III nitride multi-quantum wells on SiC substrate

Stéphanie Anceau , Pierre Lefebvre , Tadeusz Suski , Leszek Konczewicz , H Hirayama
EXMATEC'04 - 7th Int. Conf. on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies., Jun 2004, Montpellier, France. pp.642, ⟨10.1002/pssa.200460455⟩
Communication dans un congrès hal-01310242v1

Evidence de l'interaction dipôle-dipôle dans la photoluminescence résolue en temps des boîtes quantiques GaN/AlN.

Laurent Chusseau , Pierre Lefebvre , Thierry Bretagnon , Bernard Gil
Journées Nationales Micro- et Opto-électronique – Xèmes JNMO., Jun 2004, La Grande Motte, France
Communication dans un congrès hal-01312278v1

Micro-photoluminescence of GaN quantum dots embedded in 100 nm wide cylindrical AlN pillars

Thierry Taliercio , Sébastien Rousset , Pierre Lefebvre , Thierry Bretagnon , Thierry Guillet
European Materials Research Society 2004, Symposium L. InN, GaN, AlN and Related Materials, their Heterostructures and Devices., European Materials Research Society, May 2004, Strasbourg, France. pp.783-790, ⟨10.1016/j.spmi.2004.09.034⟩
Communication dans un congrès hal-01312254v1

Carrier recombination processes in GaAsN: from the dilute limit to alloying

Romuald Intartaglia , Thierry Taliercio , Pierre Lefebvre , Thierry Bretagnon , Thierry Guillet
E-MRS Spring Meeting, European Materials Society, May 2004, Strasbourg, France. pp.365, ⟨10.1049/ip-opt:20040867⟩
Communication dans un congrès hal-01310044v1

Nontrivial carrier recombination dynamics and optical properties of over-excited GaN/AlN quantum dots

S. Kalliakos , Thierry Bretagnon , Pierre Lefebvre , Sandrine Juillaguet , T. Taliercio
5th International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2004), Mar 2004, Gyeongju, South Korea. pp.2779-2782, ⟨10.1002/pssb.200404996⟩
Communication dans un congrès hal-00543738v1

Carrier Recombination Dynamics of Over-Excited Hexagonal GaN/AlN Quantum Dots.

Pierre Lefebvre , Sokratis Kalliakos , Thierry Bretagnon , Thierry Taliercio , Bernard Gil
E-MRS Spring Meeting - Symposium L., European Materials Research Society, May 2004, Strasbourg, France
Communication dans un congrès hal-01310227v1

Coexistence in photoluminescence of free exciton and bound exciton in low nitrogen content GaInNAs layers

Romuald Intartaglia , Thierry Taliercio , Bernard Gil , Pierre Lefebvre , Pierre Valvin
5th International Conference on Nitride Semiconductors - ICNS 5., May 2003, Nara, Japan. pp.2631, ⟨10.1002/pssc.200303271⟩
Communication dans un congrès hal-01312489v1

Optical properties of GaN/AlN quantum boxes under high photo-excitation

S. Kalliakos , Thierry Bretagnon , Pierre Lefebvre , Sandrine Juillaguet , T. Taliercio
5th International Conference on Nitride Semiconductors (ICNS-5), Axel Hoffmann, May 2003, Nara, Japan. pp.2666-2669, ⟨10.1002/pssc.200303270⟩
Communication dans un congrès hal-00543736v1

New model of electron-hole pair recombination in (Ga,In)N/GaN low-dimensional systems

Pierre Lefebvre , Aurélien Morel , Thierry Taliercio , Sokratis Kalliakos , Bernard Gil
5th International Conference on Nitride Semiconductors - ICNS 5., May 2003, Nara, Japan
Communication dans un congrès hal-01312484v1

Surprisingly low built-in electric fields in quaternary InAlGaN heterostructures.

Stéphanie Anceau , Pierre Lefebvre , Tadeusz Suski , S. Lepkowsky , Henryk Teisseyre
1st E-MRS Fall Meeting ., European Materials Research Society, Sep 2003, Varsovie, Poland. pp.190-194, ⟨10.1002/pssa.200303980⟩
Communication dans un congrès hal-01312293v1

Original physical properties of low-dimensional systems based on group-III nitride semiconductors.

Pierre Lefebvre
1st E-MRS Fall Meeting ., European Materials Research Society, Sep 2003, Varsovie, Poland
Communication dans un congrès hal-01312286v1

Photo-induced interband absorption in group-III nitride quantum wells

Sokratis Kalliakos , Pierre Lefebvre , Thierry Taliercio
International Conference on Superlattices, Nano-structures and Nano-devices - ICSNN 2002., Jul 2002, Toulouse, France. pp.247-249, ⟨10.1016/S1386-9477(02)00785-3⟩
Communication dans un congrès hal-01322938v1

Two-dimensional “pseudo-donor–acceptor-pairs” model of recombination dynamics in InGaN/GaN quantum wells

Aurélien Morel , Pierre Lefebvre , Thierry Taliercio , Bernard Gil , Nicolas Grandjean
International Conference on Superlattices, Nano-structures and Nano-devices - ICSNN 2002., Jul 2002, Toulouse, France. pp.64-67, ⟨10.1016/S1386-9477(02)00762-2⟩
Communication dans un congrès hal-01319596v1

Optical properties of group-III nitride based quantum wells and quantum boxes.

Pierre Lefebvre
12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. , Jun 2002, Smolenice, Slovakia. pp.227 - 232 ⟨10.1109/SIM.2002.1242761⟩
Communication dans un congrès hal-01316057v1

Small Built-in Electric Fields in Quaternary InAlGaN Heterostructures

Henryk Teisseyre , Tadeusz Suski , S. Lepkowsky , Stéphanie Anceau , Piotr Perlin
International Workshop on Nitride Semiconductors (IWN 2002), Jul 2002, Aix-la-Chapelle, Germany. pp.764-768, ⟨10.1002/1521-3951(200212)234:3<764::AID-PSSB764>3.0.CO;2-0⟩
Communication dans un congrès hal-01319469v1

Light-Hole and Heavy-Hole Excitons: the Right Probe for the Physics of Low N Content GaAsN

Thierry Taliercio , Bernard Gil , Pierre Lefebvre , Marie-Amandine Pinault , Eric Tournié
International Workshop on Nitride Semiconductors (IWN 2002), Jul 2002, Aix-la-Chapelle, Germany. pp.778-781, ⟨10.1002/1521-3951(200212)234:3<778::AID-PSSB778>3.0.CO;2-H⟩
Communication dans un congrès hal-01319577v1

Highly Photo-Excited Nitride Quantum Wells: Threshold for Exciton Bleaching

Philippe Christol , P. Bigenwald , A. Kavokin , B. Gil , P. Lefebvre
3rd International Conference on Nitride Semiconductors, Bernard GIL; Pierre LEFEBVRE, Jul 1999, Montpellier (FR), France. pp.481 - 486, ⟨10.1002/(SICI)1521-3951(199911)216:1<481::AID-PSSB481>3.0.CO;2-K⟩
Communication dans un congrès hal-01756604v1

Microcalorimetric absorption spectroscopy in GaN–AlGaN quantum wells

Axel Göldner , Axel Hoffmann , Bernard Gil , Pierre Lefebvre , Pierre Bigenwald
European-MRS Spring Meeting - Symposium L : Nitrides and Related Wide Band Gap Materials, Jun 1998, Strasbourg, France. pp.319 - 322, ⟨10.1016/S0921-5107(98)00363-8⟩
Communication dans un congrès hal-01756610v1

Optical properties of InGaN/GaN multiple quantum wells

J. Allegre , Pierre Lefebvre , Sandrine Juillaguet , Jean Camassel , Wojciech Knap
7th International Conference on Silicon Carbide, III-Nitrides and Related Materials (ICSCIII-N 97), Aug 1997, STOCKHOLM (SWEDEN), France. pp.1295-1298
Communication dans un congrès hal-00543785v1

Croissance de multi-puits quantiques dans le système (Al)GaInAs sur AlGaAsSb accordé sur InP

Guilhem Almuneau , F. Genty , Laurent Chusseau , C. Picard , T. Taliercio
Séminaire National : Epitaxie par Jets Moléculaires, 1997, Saint-Aygulf, France
Communication dans un congrès hal-01904251v1

Universal formulation of excitonic linear absorption spectra in all semiconductor microstructures

Philippe Christol , Pierre Lefebvre , Henry Mathieu
7th International Conference on Superlattices Microstructures and Microdevices, Aug 1994, Banff, AB Canada, Canada. pp.19 - 21, ⟨10.1006/spmi.1995.1005⟩
Communication dans un congrès hal-01756184v1

Universal formulation of excitonic linear absorption spectra in all semiconductor microstructures

Pierre Lefebvre , Philippe Christol , Henry Mathieu
7th International Conference on Superlattices Microstructures and Microdevices, Aug 1994, Banff, AB Canada, Canada. pp.19 - 21, ⟨10.1006/spmi.1995.1005⟩
Communication dans un congrès hal-01756638v1

General formalism for excitonic absorption edges in confined systems with arbitrary dimensionality

P. Lefebvre , Philippe Christol , H. Mathieu
3rd International Conference on Optics of Excitons in Confined Systems, Aug 1993, Montpellier, France. pp.377 - 380, ⟨10.1051/jp4:1993579⟩
Communication dans un congrès hal-01756636v1

Low dimensionality semiconductors: modelling of excitons via a fractional-dimensional space

Philippe Christol , P. Lefebvre , H. Mathieu
4èmes Journées de Microélectronique et Optoélectronique III-V, Oct 1992, La Grande Motte, France. pp.1783 - 1789, ⟨10.1051/jp3:1993237⟩
Communication dans un congrès hal-01756634v1

Hetero- and multi-quantum well structures in wide-gap II-VI semiconductors

M. Averous , B Bertho , B Boiron , B Boring , Thierry Cloitre
E-MRS Advanced Research Workshop, Jan 1991, Montpellier, France. pp.A1 - A7, ⟨10.1088/0268-1242/6/9A/001⟩
Communication dans un congrès hal-01817883v1
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FINE STRUCTURE OF EXCITONS IN QUANTUM WELLS

B. Gil , Y. Chen , P. Lefebvre , H. Mathieu
Modulated Semiconductor Structures III, Jul 1987, Montpellier (France), France. pp.C5-549-C5-552, ⟨10.1051/jphyscol:19875118⟩
Communication dans un congrès jpa-00226701v1

On the nature of light emission in polar GaN/(AlGa)N quantum wells.

Christelle Brimont , Thierry Guillet , Denis Scalbert , Benoit Jouault , Pierre Valvin
12th International Conference on Nitride Semiconductors – ICNS12., Jul 2017, Strasbourg, France.
Poster de conférence hal-01907860v1

Transport of Indirect Excitons in Polar GaN/AlGaN Quantum Wells.

Fedor Fedichkin , Peristera Andreakou , Pierre Valvin , Maria Vladimirova , Thierry Guillet
Condensed Matter in Paris – CMD25 – JMC14. , Aug 2014, Paris, France.
Poster de conférence hal-01305395v1
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Transport of Indirect Excitons in Polar GaN/AlGaN Quantum Wells.

F Fedichkin , P Andreakou , P Valvin , M Vladimirova , T Guillet
Compound Semiconductor Week 2014, May 2014, Montpellier, France.
Poster de conférence hal-01305161v1

Dipolar exciton fluids in (Al,Ga)N/GaN quantum wells

Andreas Kruse , Pierre Valvin , Maria Vladimirova , Thierry Guillet , Thierry Bretagnon
14th International Conference on the Physics of Light-Matter Coupling in Nanostructures - PLMCN14, May 2013, Hersonissos, Crète, Greece.
Poster de conférence hal-01306241v1

Time-resolved Photoluminescence spectroscopy of Zn1-XCdXO nanowires.

Manuel Lopez-Ponce , Pierre Lefebvre , Christelle Brimont , Pierre Valvin , J.-M. Ulloa
International Workshop on ZnO and Related Materials., Sep 2012, Nice, France
Poster de conférence hal-00708706v1

Excitonic effects in GaN stacking faults and crystal phase quantum wells

Pierre Corfdir , Pierre Lefebvre
International Conference on the Physics of Semiconductors, Jul 2012, Zürich, Switzerland
Poster de conférence hal-00708666v1

Role of the dielectric mismatch on the emission properties of GaN nanostructures.

Pierre Corfdir , Pierre Lefebvre
International Workshop on Nitride semiconductors (IWN 2012)., Oct 2012, Sapporo, Japan
Poster de conférence hal-00708726v1

Time-resolved photoluminescence of high-aluminum-content (Al,Ga)N quantum wells and epilayers emitting in the 215-255 nm range.

Pierre Lefebvre , Christelle Brimont , Pierre Valvin , H. Miyake , K. Hiramatsu
International Workshop on Nitride semiconductors (IWN 2012)., Oct 2012, Sapporo, Japan
Poster de conférence hal-00797472v1

Optical properties of a hybrid nitride-ZnO microcavity.

Pierre Lefebvre , Christelle Brimont , Thierry Guillet , Thierry Bretagnon , Bernard Gil
SPIE-OPTO-Photonic West. "Gallium Nitride Materials & Devices VII"., Jan 2012, San Francisco, United States
Poster de conférence hal-00708677v1

Dynamics of cavity biexcitons in III-Nitride based multi quantum well Microcavities

Pierre Corfdir , J. Levrat , G. Rossbach , R. Butté , E. Feltin
Optics of Excitons in Confined Systems (OECS 12)., Sep 2011, Paris, France
Poster de conférence hal-00631405v1

Radiative Recombination Governed Lifetimes In Non-polar (Al,Ga)N/GaN Quantum Wells Grown On Bulk GaN Crystals.

Pierre Corfdir , Amélie Dussaigne , H. Teisseyre , Izabella Grzegory , Tadeusz Suski
9th International Conference on Nitride Semiconductors. ICNS9., Jul 2011, Glasgow, United Kingdom
Poster de conférence hal-00631755v1

Growth and Characterization of InGaN/GaN Quantum Dots for violet-blue Applications

Zarko Gacevic , Pierre Lefebvre , Frank Bertram , G. Schmidt , P. Veit
9th International Conference on Nitride Semiconductors - ICNS9., Jul 2011, Glasgow, United Kingdom
Poster de conférence hal-00632224v1

Radiative recombination limited lifetimes in non-polar (Al,Ga)N/GaN quantum wells grown on bulk GaN crystals.

Pierre Corfdir , Amélie Dussaigne , H. Teisseyre , Izabella Grzegory , Tadeusz Suski
38th International Symposium on Compound Semiconductors - ISCS38., May 2011, Berlin, Germany
Poster de conférence hal-00632230v1

Exciton relaxation and recombination mechanisms in a-plane GaN probed by time-resolved cathodoluminescence.

Pierre Corfdir , Pierre Lefebvre , Amélie Dussaigne , J. Ristic , T. Zhu
10th International Workshop on Beam Injection Assessment of Microstructures in Semiconductors - BIAMS 2010, Jul 2010, Halle (Saale), Germany
Poster de conférence hal-00634162v1

Radiative Recombination Limited Lifetimes in a-plane (Al,Ga)N/GaN single quantum wells grown on GaN.

Pierre Corfdir , Amélie Dussaigne , Pierre Lefebvre , H. Teisseyre , Tadeusz Suski
International Workshop on Nitride Semiconductors - IWN 2010, Sep 2010, Tampa, Floride., United States
Poster de conférence hal-00633505v1

GaN nanocolumns grown on Si(111) by plasma-assisted MBE: Correlation of structural and optical properties with growth parameters.

S. Fernandez-Garrido , J. Grandal , Pierre Lefebvre , M.A. Sanchez-Garcia , E. Calleja
3rd International Symposium on Growth of III-Nitrides - ISGN3., Jul 2010, Montpellier, France
Poster de conférence hal-00633536v1

MBE growth and characterization of InN/InGaN thin films and nanostructures on GaN templates and Si(111) substrates.

Steven Albert , J. Grandal , M.A. Sanchez-Garcia , Pierre Lefebvre , J. Ristic
16th International Conference on Molecular Beam Epitaxy (MBE 2010), Aug 2010, Berlin, Germany
Poster de conférence hal-00633522v1

Radiative lifetimes of localized and free excitons in homoepitaxial non-polar (Al,Ga)N/GaN single quantum well.

Pierre Corfdir , Amélie Dussaigne , Pierre Lefebvre , H. Teisseyre , Jean-Daniel Ganière
39 th International School and Conference on the Physics of Semiconductors., Jun 2010, Jaszowiec, Poland
Poster de conférence hal-00634159v1

Exciton localization on basal stacking faults in a-plane GaN probed by picosecond time-resolved cathodoluminescence.

Pierre Corfdir , Pierre Lefebvre , J. Ristic , Amélie Dussaigne , Samuel Sonderegger
Int. Conf. On Optics of Excitons in Confined Systems - OECS11., Sep 2009, Madrid, Spain
Poster de conférence hal-00797193v1

Optical properties of V-pits in GaN through temperature-dependent picosecond Time-Resolved Cathodolminescence (pTRCL)

Samuel Sonderegger , Pierre Corfdir , Laurent Balet , Pierre Lefebvre , Denis Martin
Int. Conf. on Nitride Semiconductors - ICNS8., Oct 2009, Jeju, South Korea
Poster de conférence hal-00797196v1

Strong coupling of multiple branches polariton in a ZnO microcavity.

Stéphane Faure , Thierry Guillet , Christelle Brimont , Thierry Bretagnon , Pierre Lefebvre
Int. Conf. On Optics of Excitons in Confined Systems - OECS11., Sep 2009, Madrid, Spain
Poster de conférence hal-00797194v1

Spectroscopy of GaN nanocolumns grown by molecular beam epitaxy on Si.

Pierre Corfdir , Jean-Daniel Ganière , J. Ristic , Pierre Lefebvre , B. Deveaud
Meeting annuel de la Société Suisse de Physique., Mar 2008, Genève, Switzerland
Poster de conférence hal-00797191v1

Which quasi-particle in wide band gap bulk microcavities?

Stéphane Faure , Thierry Guillet , Pierre Lefebvre , Thierry Bretagnon , Thierry Taliercio
2nd International School on Nanophotonics , Sep 2007, Maratea, Italy.
Poster de conférence hal-01306849v1

Determination of internal electric field in ZnO/(Zn,Mg)O quantum wells from time resolved photoluminescence experiments

Thierry Bretagnon , Thierry Guillet , Pierre Lefebvre , Thierry Taliercio , Bernard Gil
28th International Conference on the Physics of Semiconductors - ICPS 28. , Jul 2006, Vienne, Austria.
Poster de conférence hal-01309701v1

ZnO / (Zn,Mg)O Quantum Wells : a Time Resolved Photoluminescence Study

Thierry Bretagnon , Pierre Lefebvre , Bernard Gil , Christian Morhain
International Symposium on Blue Lasers and Light Emitting Diodes – ISBLLED06., May 2006, Montpellier, France
Poster de conférence hal-01309698v1

Excitons in GaN/AlGaN homoepitaxial quantum wells grown along the nonpolar (02-11) direction on bulk GaN substrates.

Henryk Teisseyre , C. Skierbiszewski , Boleslaw Łucznik , Kamler G. , Feduniewicz A.
6th International Conference on Nitride Semiconductors (ICNS6). , Aug 2006, Brème, Germany.
Poster de conférence hal-01309939v1

Localization effects in InGaN/GaN wide quantum well structures grown on bulk GaN crystals.

Robert Czernecki , Piotr Perlin , G. Franssen , T. Swietlik , J. Borysiuk
6th International Conference on Nitride Semiconductors (ICNS6). , Aug 2006, Brème, Germany.
Poster de conférence hal-01309942v1

Micro-photoluminescence of isolated hexagonal GaN/AlN quantum dots : role of the electron-hole dipole

Richard Bardoux , Thierry Guillet , Pierre Lefebvre , Thierry Taliercio , Thierry Bretagnon
Wolfgang Jantsch; Friederich Schafler. 28th International Conference on the Physics of Semiconductors - ICPS 28. , Jul 2006, Vienne, Austria. AIP Publishing, AIP Conference Proceedings, 893, pp.941, 2007, PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors - ICPS 2006. ⟨10.1063/1.2730203⟩
Poster de conférence hal-01309696v1

Malices et fourberies des boîtes quantiques GaN/AlN.

Pierre Lefebvre , Thierry Bretagnon , Thierry Taliercio , Thierry Guillet , Bernard Gil
Journées Nationales Micro- et Opto-électronique – Xèmes JNMO., Jun 2004, La Grande Motte, France.
Poster de conférence hal-01312258v1

Dynamique de recombinaison des porteurs dans des puits quantiques GaInAsN/GaAs.

Romuald Intartaglia , Thierry Taliercio , Pierre Valvin , Thierry Guillet , Thierry Bretagnon
9èmes Journées de la Matière Condensée, Aug 2004, Nancy, France
Poster de conférence hal-01312282v1

Amélioration de l’efficacité radiative dans les puits quantiques à base d’(Al,Ga,In)N pour les composants optoélectroniques

Stéphanie Anceau , Pierre Lefebvre , Tadeusz Suski , Leszek Konczewicz , H Hirayama
Journées du GDR "Semiconducteurs à Grands Gaps"., May 2004, Fréjus, France
Poster de conférence hal-01312280v1

Continuous-wave versus time-resolved photo-luminescence of GaN/AlN quantum dots.

Pierre Lefebvre , Thierry Bretagnon , Thierry Taliercio , Thierry Guillet , Bernard Gil
Summer School "Semiconductor Quantum Dots: Physics and Devices"., Sep 2004, Ascona, Switzerland
Poster de conférence hal-01312253v1

Carrier recombination dynamics in GaN/AlN quantum dots.

Thierry Bretagnon , Pierre Lefebvre , Pierre Valvin , Thierry Taliercio , Thierry Guillet
EXMATEC'04 - 7th Int. Conf. on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies., Jun 2004, Montpellier, France
Poster de conférence hal-01310832v1

Small internal electric fields in quaternary InGaAlN heterostructures

Stéphanie Anceau , S. Lepkowsky , Henryk Teisseyre , Tadeusz Suski , Piotr Perlin
Michael Shur; Arturas Zukauskas. NATO Advanced Research Workshop on UV Solid State Light Emitters and Detectors., Jun 2003, Vilnius, Lithuania. Kluwer Academic Publisher, Dordrecht, Pays-Bas.; lOS Press, Amsterdam, Pays-Bas.; NATO Scientific Affairs Division., 144, pp.215-222, UV Solid-State Light Emitters and Detectors. NATO Science Series II: Mathematics, Physics and Chemistry. ⟨10.1007/978-1-4020-2103-9⟩
Poster de conférence hal-01312494v1

Nonlinear optical absorption induced by high photo-excitation of group-III nitride based quantum wells

Pierre Lefebvre , Sokratis Kalliakos , Thierry Taliercio
5th International Conference on Nitride Semiconductors - ICNS 5., May 2003, Nara, Japan.
Poster de conférence hal-01312666v1

Evolution of internal electric fields with the wel thickness of quaternary InAlGaN quantum wells

Stéphanie Anceau , Henryk Teisseyre , Tadeusz Suski , S. Lepkowsky , Leszek Konczewicz
Joint 19th AIRAPT - 41th EHPRG Int. Conf. on High Pressure Science and Technology , Jul 2003, Bordeaux, France
Poster de conférence hal-01312667v1

Internal electric fields in quaternary InAlGaN heterostructures

Henryk Teisseyre , Tadeusz Suski , S. Lepkowsky , Stéphanie Anceau , Piotr Perlin
5th International Conference on Nitride Semiconductors - ICNS 5., May 2003, Nara, Japan.
Poster de conférence hal-01312665v1

Proceedings of the 7th International Conference on Optics and Excitons in Confined Systems (OECS7).

Gérald Bastard , Pierre Lefebvre
Pierre Lefebvre; Gérald Bastard. 7th International Conference on Optics and Excitons in Confined Systems (OECS7)., Sep 2001, Montpellier, France. 190 (2-3), WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, pp.303-603 (Part 1) et 605-870 (Part 2), 2002, Proceedings of the 7th International Conference on Optics and Excitons in Confined Systems (OECS7)., ⟨10.1002/1521-396X(200204)190:2<303::AID-PSSA303>3.0.CO;2-B⟩
Proceedings/Recueil des communications hal-01312678v1

Proceedings Symposium H, "GaN & Related Compounds". E-MRS Spring Meeting.

Hiroshi Amano , E. Calleja , Jürgen Christen , Markus Kamp , Pierre Lefebvre
Pierre Lefebvre; Enrique Calleja; Tadeusz Suski; Jürgen Christen; Hiroshi Amano; James Speck; Markus Kamp. E-MRS Spring Meeting. Symposium H, "GaN & Related Compounds". , Jun 2002, Strasbourg, France. 93 (1-3), Elsevier Science B.V., pp.1-245, 2002, ⟨10.1016/S0921-5107(02)00114-9⟩
Proceedings/Recueil des communications hal-01312713v1