
Pierre Lefebvre
Pierre LEFEBVRE - Directeur de Recherche CNRS - Directeur du Laboratoire Charles Coulomb (L2C)
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Publications
Light-emitting diode chip. Phosphor-free-all-InGaN White Light LEDs using Nanocolumns.Germany, Patent n° : EP2506321. L2C:11-359. 2012
Brevet
hal-02074092
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Optical gas sensing device.Germany, Patent n° : EP2518475. 2012
Brevet
hal-01306407
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Surface related optical properties of GaN-based nanowires.V. Consonni, G. Feuillet. Wide Band Gap Semiconductor Nanowires 1., John Wiley & Sons, Inc., Hoboken, NJ, USA., pp.59-79, 2014, Print: 978-1-84821-597-9. Online:9781118984321. ⟨10.1002/9781118984321.ch3⟩
Chapitre d'ouvrage
hal-01061571
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Physics and optical properties of GaN-AlGaN quantum wells.H. Jiang; O. Manasreh III-V Nitride Semiconductors : Optical Properties I, Taylor & Francis Books, pp.249, 2002, 1-56032-972-6
Chapitre d'ouvrage
hal-01306468
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Physique des Semiconducteurs et des Composants Electroniques - Problèmes Résolus.Dunod, 2001, Collection Sciences Sup, 2-10-004662-4
Ouvrages
hal-01306435
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Complexity of dipolar exciton Mott transition in GaN/(AlGa)N nanostructuresOptics of Excitons in Confined Systems, University of Dortmund, Aug 2021, Dortmund, Germany
Communication dans un congrès
hal-04878035
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Control Over Dipolar Exciton Fluids in GaN/(AlGa)N Nanostructures13th International Conference on Nitride Semiconductors (ICNS-13), Jul 2019, Bellevue, United States
Communication dans un congrès
hal-02466858
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Controlled and thermalized indirect exciton fluids in a GaN/AlGaN quantum well with electrostatic traps20th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN19), Jul 2019, Suzdal, Russia
Communication dans un congrès
hal-04874180
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Control over dipolar exciton fluids in GaN/(AlGa)N nanostructures5th INTERNATIONAL CONFERENCE ON QUANTUM TECHNOLOGIES, Jul 2019, Moscou, Russia
Communication dans un congrès
hal-02466887
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Electrostatic trapping of indirect excitons in GaN/AlGaN quantum wells.International Conference on the Physics of Semiconductors, Jul 2018, Montpellier, France
Communication dans un congrès
hal-01907806
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Trapping dynamics of indirect excitons into electrostatic traps in GaN quantum wells.TERAMETANANO-3: Terahertz Emission, Metamaterials and Nanophotonics., Alexey Kavokin - Jerome Tignon - Timothy C. H. Liew - Pavel Belov, Mar 2018, Uxmal, Mexico
Communication dans un congrès
hal-01908823
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Phase transition of indirect excitons in GaN quantum wells.International Workshop on Nitride semiconductors - IWN2018., Nov 2018, Kanazawa, Japan
Communication dans un congrès
hal-01910225
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Switching of exciton character in double InGaN/GaN quantum wells.International Workshop on Nitride semiconductors - IWN2018., Nov 2018, Kanazawa, Japan
Communication dans un congrès
hal-01908886
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Indirect Excitons in Group III-Nitride-Based Quantum Wells.CIMTEC 2018 - 14th Intl Conference on Modern Materials and Technologies - 8th Forum on New Materials, Shuji NAKAMURA; University of California; USA (Honorary Chair) Michele MUCCINI; CNR-ISMN; Italy (C, Jun 2018, Pérouse, Italy
Communication dans un congrès
hal-01908795
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Homogeneous versus inhomogeneous broadening of the photoluminescence in polar GaN/(AlGa)N quantum wells.International Conference on Physics of Light-Matter Coupling in Nanostructures – PLMCN18., Sven Höfling, Alexei Kavokin, Jul 2017, Würtzburg, Germany
Communication dans un congrès
hal-01908565
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Indirect excitons in polar GaN/(AlGa)N quantum wellsInternational school/colloquium in honor of E. Gross, Oct 2017, St-Petersbourg, Russia
Communication dans un congrès
hal-01932812
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On the nature of light emission in polar GaN/(AlGa)N quantum wellsInternational Conference on Hybrid Photonics and Materials, Sep 2017, Miconos, Greece
Communication dans un congrès
hal-01932705
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Indirect excitons in polar group III nitride quantum wells.8th International Conference on Materials Science and Condensed Matter Physics, Leonid Kulyuk, Sep 2016, Chisinau, Moldova
Communication dans un congrès
hal-01388929
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Transport of indirect excitons in GaN quantum wells.International Workshop on Nitride Semiconductors (IWN 2016), Alan Doolittle, Tomás Palacios, Stacia Keller, Siddharth Rajan, Oct 2016, Orlando, United States
Communication dans un congrès
hal-01388983
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Searching for Indirect Excitons in Coupled Double InGaN/GaN Quantum WellsInternational Workshop on Nitride Semiconductors (IWN 2016), Oct 2016, Orlando, United States
Communication dans un congrès
hal-01389862
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Picosecond dynamics of free and bound excitons in doped diamondHasselt Diamond Workshop 2016 - SBDD XXI, Miloš Nesládek, Mar 2016, Hasselt, Belgium. ⟨10.1103/PhysRevB.93.115202⟩
Communication dans un congrès
hal-01306898
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Indirect excitons in AlGaN/GaN polar quantum wells.17th International Conference on Physics of Light-Matter Coupling in Nanostructures – PLMCN17., Yasuhiko Arakawa, Mar 2016, Nara, Japan
Communication dans un congrès
hal-01388908
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“Naturally” indirect excitons in wide band-gap semiconductor quantum wells.INDEX International School on the Physics of Indirect Excitons , Guillaume Malpuech; Masha Vladimirova, Mar 2015, Les Houches, France
Communication dans un congrès
hal-01305086
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Transport of Indirect Excitons in Polar GaN/AlGaN Quantum Well Structures Grown on Sapphire and GaN Substrates.Collective Electronic Excitations in 2D (CEE 2D 2015) - INDEX Conference, François Dubin, ICFO (ES); Vittorio Pellegrini, Scuola Normale Superiore & IIT (IT); Aron Pinczuk, Columbia University (USA); David Ritchie, University of Cambridge (UK); Massimo Rontani, Cnr Nano (IT); Thomas Satzoukidis, Scuola Normale Superiore (IT); Masha Vladimirova, CNRS (FR), Sep 2015, Pise, Italy
Communication dans un congrès
hal-01305122
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Indirect excitons in wide band gap semiconductors.International School on Nanophotonics and Photovoltaics. INSP 2015., MISP : Mediterranean Institute of Fundamental Physics, Sep 2015, Cefalu, Italy
Communication dans un congrès
hal-01389731
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Impact of surface and internal electrical fields on the properties of donor atoms in GaN nanowires.International Workshop on Nitride Semiconductors – IWN 2014., Tadeusz Suski; Detlef Hommel, Aug 2014, Wroclaw, Poland
Communication dans un congrès
hal-01305403
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Transient photoluminescence of aluminum-rich (Al, Ga) N low-dimensional structuresInternational Conference on Nitride Semiconductors – ICNS10., Jaime A. Freitas Jr, Aug 2013, Washington DC, United States. pp.765, ⟨10.1002/pssa.201300505⟩
Communication dans un congrès
istex
hal-01021458
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Transport of Indirect Excitons in Polar GaN/AlGaN Quantum Wells.15th conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN15), Bernard Gil, Jun 2014, Montpellier, France
Communication dans un congrès
hal-01305383
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Advances on MBE Selective Area Growth of III- Nitride nanostructures: from nanoLEDs to pseudo substrates.Workshop on Frontier Electronics - WOFE., Chairman: M.Shur - Rensselaer Polytechnic Institute,Troy, NY, USA, Dec 2013, San Juan, Puerto Rico. pp.1450020, ⟨10.1142/S0129156414500207⟩
Communication dans un congrès
hal-01081163
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ZnCdO/ZnO multiple quantum well nanowires emitting in the visible.8th International Workshop on Zinc Oxide and Related Materials - IWZnO 2014., Sep 2014, Niagara Falls, Canada
Communication dans un congrès
hal-01305424
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Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN SubstratesInternational Workshop on Nitride semiconductors., Oct 2012, Sapporo, Japan. pp.08JC01, ⟨10.7567/JJAP.52.08JC01⟩
Communication dans un congrès
hal-01179181
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Towards purely radiative recombination at room-temperature in nonpolar AlGaN/GaN quantum wellsE-MRS Fall Meeting, European Materials Society, Sep 2013, Varsovie, Poland
Communication dans un congrès
hal-01306226
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Towards purely radiative recombination at room-temperature in nonpolar AlGaN/GaN quantum wells.E-MRS Fall Meeting, Sep 2013, Varsovie, Poland
Communication dans un congrès
hal-01907907
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Spatio-Temporal Dynamical Properties of Naturally Indirect Excitons in Polar Nitride Quantum Wells.European Materials Research Society (E-MRS) Srping Meeting. Symposium L: Group III Nitrides., European Materials Research Society (E-MRS), May 2013, Strasbourg, France
Communication dans un congrès
hal-00796426
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Excitonic effects in GaN stacking faults and crystal phase quantum wellsUK Semiconductors 2012, Jul 2012, Sheffield, United Kingdom
Communication dans un congrès
hal-00708658
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Purely radiative recombinations and thermal carrier emission in nonpolar (Al,Ga)N/GaN quantum wells.International Conference on the Physics of Semiconductors, Jul 2012, Zürich, Switzerland
Communication dans un congrès
hal-00708669
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Efficient phosphor-free, white light emission by using ordered arrays of GaN/InGaN nanocolumnar LEDs grown by Selective Area MBE.Workshop on Frontier Electronics - WOFE 7, Dec 2011, San Juan, Puerto Rico. pp.1250010, ⟨10.1142/S0129156412500103⟩
Communication dans un congrès
hal-00656647
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Impact of biexcitons on the formation of polariton condensates in III-nitride based multiple quantum well microcavities.International Workshop on Nitride semiconductors (IWN 2012)., Oct 2012, Sapporo, Japan
Communication dans un congrès
hal-00708717
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Purely radiative exciton recombination in (Al,Ga)N/GaN quantum wells grown on the a-facet of GaN crystals.International Workshop on Nitride semiconductors (IWN 2012)., Oct 2012, Sapporo, Japan
Communication dans un congrès
hal-00708711
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Study of the effect of rapid thermal annealing in high Cd content Zn1-XCdXO nanowires grown by MOCVD.International Workshop on ZnO and Related Materials., Sep 2012, Nice, France
Communication dans un congrès
hal-00708700
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Analysis and control of emission properties of InGaN-on-GaN nanocolumns grown by molecular-beam epitaxy on Si(111) substrates.SPIE-Photonic West-OPTO. "Gallium Nitride Materials and Devices VII". (Conference 8262)., Jan 2012, San Francisco, United States
Communication dans un congrès
hal-00708483
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E-beam nanopatterning for the ordered growth of GaN/InGaN nanorods.37th International Conference on Micro and Nano Engineering (MNE 2011)., Sep 2011, Berlin, Germany. pp.374, ⟨10.1016/j.mee.2012.07.024⟩
Communication dans un congrès
hal-00726087
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Control of the Morphology on Selective Area Growth of GaN Nanocolumns by Rf-Plasma-Assisted MBE.9th International Conference on Nitride Semiconductors - ICNS9., Jul 2011, Glasgow, United Kingdom
Communication dans un congrès
hal-00631606
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Emission Control of InGaN Nanocolumns on Si(111) substrates Grown by MBE .9th International Conference on Nitride Semiconductors - ICNS9., Jul 2011, Glasgow, United Kingdom
Communication dans un congrès
hal-00631744
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Picosecond Time-Resolved Cathodoluminescence to Probe Exciton Dynamics in GaN and GaN based heterostructuresCathodo-luminescence 2011. , Oct 2011, Gaithersburg, MD, United States
Communication dans un congrès
hal-01306660
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Plasma-assisted MBE growth of III-N nanorods: applications to optoelectronic devices and photovoltaics.11th International Conference on Light-Matter Coupling in Nanostructures, PLMCN11, Apr 2011, Berlin, Germany
Communication dans un congrès
hal-00632240
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Direct observation of biexciton localization dynamics in (Al,Ga)N/GaN multi quantum wells.38th International Symposium on Compound Semiconductors - ISCS 2011., May 2011, Berlin, Germany
Communication dans un congrès
hal-00797375
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Picosecond Time-Resolved Cathodoluminescence to Probe Exciton Dynamics in a-Plane (Al,Ga)N/GaN Quantum Wells.Microscopy and Microanalysis 2011, Aug 2011, Nashville, Tennessee., United States. pp.1868-1869, ⟨10.1017/S143192761101021X⟩
Communication dans un congrès
hal-00796090
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Selective area growth of GaN nanocolumns by rf-plasma assisted MBE at low temperature and under nitrogen-rich conditions.9th International Conference on Nitride Semiconductors - ICNS9., Jul 2011, Glasgow, United Kingdom
Communication dans un congrès
hal-00631745
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Surface-related optical properties of GaN and InGaN nanocolumns.European Materials Research Society Spring Meeting., May 2011, Nice, France
Communication dans un congrès
hal-00631334
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Time-resolved cathodoluminescence on polychromatic light emitting (In,Ga)N quantum wells grown on (11-22) GaN facets.(10th Int. Workshop on Beam Injection Assessment of Microstructures in Semicond - BIAMS 2010jul. 2010, Jul 2010, Halle, Germany. pp.1394, ⟨10.1002/pssc.201084005⟩
Communication dans un congrès
istex
hal-00631325
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MBE growth and characterization of InGaN nanocolumns on Silicon substrates.European Materials Research Society Spring Meeting., May 2011, Nice, France
Communication dans un congrès
hal-00632236
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MBE growth and characterization of InGaN-based films and nanocolumns on Silicon substrates and GaN templates.2011 German-Japanese-Spanish Joint Workshop on Frontiers in Photonic and Electronic Materials and Devices, Elias Muñoz, Mar 2011, Grenade, Spain
Communication dans un congrès
hal-01306674
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Biexciton-Assisted Relaxation Mechanisms In III-Nitride Based Multi-Quantum Well Microcavities.9th International Conference on Nitride Semiconductors. ICNS9., Jul 2011, Glasgow, United Kingdom
Communication dans un congrès
hal-00631761
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Carrier localization and surface effects in InGaN nanocolumns grown by plasma-assisted molecular beam epitaxy.International Workshop on Nitride Semiconductors - IWN 2010, Sep 2010, Tampa, Floride., United States
Communication dans un congrès
hal-00633510
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Spontaneous and ordered growth of III-N nanocolumns: growth mechanisms and applications to Optoelectronic Devices.International Workshop on Nitride Semiconductors - IWN 2010, Sep 2010, Tampa, Floride., United States
Communication dans un congrès
hal-00633516
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Selective area growth of GaN nanocolumns by rf-plasma-assisted MBE.16th International Conference on Molecular Beam Epitaxy (MBE 2010), Aug 2010, Berlin, Germany
Communication dans un congrès
hal-00633529
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On the spontaneous and ordered growth of III-N nanocolumns: growth on nonpolar substrates and applications to Optoelectronic Devices.39 th International School and Conference on the Physics of Semiconductors., Jun 2010, Jaszowiec, Poland
Communication dans un congrès
hal-00634066
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Exciton dynamics in a-plane (Al,Ga)N/GaN single quantum wells grown by molecular beam epitaxy on ELO-GaN.International Workshop on Nitride Semiconductors - IWN 2010, Sep 2010, Tampa, Floride., United States
Communication dans un congrès
hal-00633490
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Internal efficiency of LEDs: An application of Quantum Mechanics.ForumLED - Europe 2010, Dec 2010, Lyon, France
Communication dans un congrès
hal-00634063
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Distortion of donor properties in III-nitride based nano-scale systems.International Workshop on Nitride Semiconductors - IWN 2010, Sep 2010, Tampa, Floride., United States
Communication dans un congrès
hal-00633495
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Novel Picosecond Time-Resolved Cathodoluminescence to Probe Exciton Recombination Dynamics in GaN and GaN Based Heterostructures.Microscopy and Microanalysis (M&M) 2010, Aug 2010, Portland, United States. pp.500, ⟨10.1017/S1431927610058162⟩
Communication dans un congrès
hal-00741055
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Polarized emission from a single GaN/AlN quantum dot : Experiment and theoryJournées Boîtes Quantiques, Jun 2009, Grenoble, France
Communication dans un congrès
hal-00633306
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Picosecond time-resolved cathodoluminescence to study GaN based materials2nd GCOE International Symposium on Photonics and Electronics Science and Engineering, Mar 2009, Kyoto, Japan
Communication dans un congrès
hal-00797197
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Effect of the internal electric field on excitonic transitions in ZnO/(Zn,Mg)O quantum wells.9th Physics of Light-Matter Coupling and Nanostructures - PLMCN., Apr 2009, Lecce, Italy
Communication dans un congrès
hal-00797192
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Low-temperature picosecond time-resolved cathodoluminescence study of localization in a-plane GaN.Int. Conf. on Nitride Semiconductors - ICNS8., Oct 2009, Jeju, South Korea
Communication dans un congrès
hal-00797195
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Time-resolved photoluminescence of GaN nanocolumns grown by molecular beam epitaxy on Si.International Workshop on Nitride Semiconductors – IWN08, Oct 2008, Montreux, Switzerland
Communication dans un congrès
hal-00390010
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Propriétés optiques de nanostructures à base de ZnO12èmes Journées Nano, Micro et Optoélectroniques, Jun 2008, Saint-Pierre d'Oléron, France
Communication dans un congrès
hal-00389974
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Polarized emission from a single GaN/AlN quantum dot : Experiment and theoryInternational Conference on LightMatter Coupling in Nanostructures (PLMCN8), Apr 2008, Tokyo, Japan
Communication dans un congrès
hal-00389909
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Time-resolved spectroscopy of excitonic transitions in ZnO/(Zn,Mg)O quantum wells grown by MBE14th European Molecular Beam Epitaxy Workshop (Euro-MBE), Mar 2008, Grenade, Spain
Communication dans un congrès
hal-00389978
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Internal electric field in ZnO/Zn1-xMgxO in single quantum wells.Fifth International Workshop on Zinc Oxide and Related Materials., Sep 2008, Ypsilanti, Michigan., United States
Communication dans un congrès
hal-00797187
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Etude du couplage fort exciton-photon dans les microcavités massives ZnO par photoluminescence11ème Journées de la Matière Condensée (JMC11), Aug 2008, Strasbourg, France
Communication dans un congrès
hal-00389906
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Polarized emission from a single GaN/AlN quantum dot : Experiment and theoryInternational Workshop on Nitride Semiconductors (IWN2008), Oct 2008, Montreux, Switzerland
Communication dans un congrès
hal-00389910
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Emission polarisée d'une boîte quantique unique GaN/AlN : expérience et théorie11ème Journées de la Matière Condensée, Aug 2008, Strasbourg, France
Communication dans un congrès
hal-00389559
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Emission properties of basal stacking faults in a-plane gallium nitride9th International Workshop on Beam Injection Assessment of Microstructures in Semiconductors. BIAMS 2008, Jun 2008, Tolède, Spain
Communication dans un congrès
hal-00390009
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Which quasi-particles in wide band gap bulk microcavities ?8th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN8), Apr 2008, Tokyo, Japan
Communication dans un congrès
hal-00388717
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Time-resolved spectroscopy of excitonic transitions in ZnO/(Zn, Mg)O quantum wells6th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN 2006), J. Christen, Sep 2006, Magdeburg, Germany. pp.352, ⟨10.1016/j.spmi.2007.03.030⟩
Communication dans un congrès
istex
hal-01308666
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Linear polarization of the emission of a single polar GaN/AlN quantum dot7th International Conference of Nitride Semiconductors (ICNS-7) , Sep 2007, Las Vegas, United States
Communication dans un congrès
hal-01306799
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Synthes de nanofils de ZnO dans des matériaux poreux ordonnés: experience et simulation moléculaireMatériaux 2006, Nov 2007, Dijon, France
Communication dans un congrès
hal-00339577
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Radiative lifetime in wurtzite GaN/AlN quantum dots.International Symposium on Blue Laser and Light Emitting Diodes (ISBLED06), May 2006, Montpellier, France. pp.183, ⟨10.1002/pssc.200673559⟩
Communication dans un congrès
istex
hal-00389911
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Micro-Photoluminescence of isolated GaN/AlN hexagonal QDs: Role of the trapping dynamics of charges at AlN defects14th European Molecular Beam Epitaxy Workshop (14th Euro-MBE), Mar 2007, Grenade, Spain
Communication dans un congrès
hal-01306794
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Unusual dynamics of time-resolved emission from wide-band gap quantum dots.Workshop on Advances in Physics and Applications of Low-Dimensional Systems, Jul 2007, Brazilia, Brazil
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hal-00389998
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Morphology control of ZnO nanomaterials using double hydrophilis block polymers2007 MRS fall meeting, Nov 2007, Boston, United States. pp.1
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hal-00279166
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Time-resolved spectroscopy of excitonic transitions in ZnO/(Zn,Mg)O quantum wells grown by MBE.14th Euro-MBE Workshop., Mar 2007, Grenade, Spain
Communication dans un congrès
hal-01306409
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Contrôle de la croissance de nanomatériaux d'oxyde de zinc par des copolymères diblocs hydrophiles.Matériaux 2006, Fédération Française des Matériaux, Nov 2006, Dijon, France
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hal-01309706
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Polar and non-polar ZnO/ZnMgO quantum well heterostructuresInternational Symposium on Blue Lasers and Light Emitting Diodes – ISBLLED06., May 2006, Montpellier, France
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hal-01309700
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Optical properties of quantum nanostructures based on wide band-gap semiconductor compounds.6th French-Japanese Workshop on Nanomaterials. , Mar 2006, Sapporo, Japan
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hal-01309482
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k.P energy band structure of ZnO/Zn1-xMgxO quantum well heterostructuresE-MRS Spring Meeting, May 2005, Strasbourg, France. pp.91, ⟨10.1016/j.spmi.2005.08.033⟩
Communication dans un congrès
istex
hal-00389991
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Optical properties of ZnO nanorods and nanowiresE-MRS Spring Meeting, May 2005, Strasbourg, France. pp.358, ⟨10.1016/j.spmi.2005.08.079⟩
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istex
hal-00389990
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Study of Sharp Photoluminescence Spectra of Individual GaN/AlN Quantum Dots. Spectral Diffusion Effects.International Workshop on Nitrides Semiconductors (IWN), Oct 2006, Kyoto, Japan
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hal-00389908
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Carrier recombination dynamics and internal electric fields in GaN/AlN self-organized quantum dots.6th International Conference on Nitride Semiconductors (ICNS6). , Aug 2006, Brème, Germany
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hal-01309937
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Time resolved photoluminescence study of ZnO/(Zn,Mg)O quantum wellsInternational Conference on Materials for Advanced Technologies (ICMAT 2005) Symposium N — ZnO and Related Materials, Jul 2005, Singapour, Singapore. pp.12-15, ⟨10.1016/j.jcrysgro.2005.10.034⟩
Communication dans un congrès
istex
hal-01309928
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Morphology Control of ZnO Nanomaterials using Double Hydrophilic Block CopolymersMRS Fall Meeting, Dec 2005, Boston, United States. pp.Rb15-05.1
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hal-00389989
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Synthèse de nanofils de ZnO dans des Matériaux Poreux Ordonnés: Experience et Simulation Moléculaire.Matériaux 2006, Fédération Française des Matériaux, Nov 2006, Dijon, France
Communication dans un congrès
hal-01309705
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Time resolved photoluminescence of ZnO / (Zn,Mg)O quantum wells. Internal electric field effects.E-MRS Spring Meeting - Symposium G : ZnO and Related Materials., May 2005, Strasbourg, France
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hal-01309933
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Longitudinal-optical phonon broadening due to nitrogen atom incorporation in InGaAsN/GaAs quantum wells5th International Conference on Light–Matter Coupling in Nanostructures (PLMCN5)., Jun 2005, Glasgow, United Kingdom. pp.3887, ⟨10.1002/pssc.200562039⟩
Communication dans un congrès
istex
hal-01309930
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Enhancement of localization and confinement effects in quaternary group-III nitride multi-quantum wells on SiC substrateEXMATEC'04 - 7th Int. Conf. on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies., Jun 2004, Montpellier, France. pp.642, ⟨10.1002/pssa.200460455⟩
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istex
hal-01310242
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Continuous wave and time resolved spectroscopy of InAsN/GaAsN based quantum dots5th International Conference on Light–Matter Coupling in Nanostructures (PLMCN5). , Jun 2005, Glasgow, United Kingdom. pp.2598-2603, ⟨10.1002/pssa.200562030⟩
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istex
hal-01309747
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Surprisingly low built-in electric fields in quaternary InAlGaN heterostructures.1st E-MRS Fall Meeting ., European Materials Research Society, Sep 2003, Varsovie, Poland. pp.190-194, ⟨10.1002/pssa.200303980⟩
Communication dans un congrès
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hal-01312293
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Nontrivial carrier recombination dynamics and optical properties of over-excited GaN/AlN quantum dots5th International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2004), Mar 2004, Gyeongju, South Korea. pp.2779-2782, ⟨10.1002/pssb.200404996⟩
Communication dans un congrès
istex
hal-00543738
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Carrier Recombination Dynamics of Over-Excited Hexagonal GaN/AlN Quantum Dots.E-MRS Spring Meeting - Symposium L., European Materials Research Society, May 2004, Strasbourg, France
Communication dans un congrès
hal-01310227
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Carrier recombination processes in GaAsN: from the dilute limit to alloyingE-MRS Spring Meeting, European Materials Society, May 2004, Strasbourg, France. pp.365, ⟨10.1049/ip-opt:20040867⟩
Communication dans un congrès
hal-01310044
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Micro-photoluminescence of GaN quantum dots embedded in 100 nm wide cylindrical AlN pillarsEuropean Materials Research Society 2004, Symposium L. InN, GaN, AlN and Related Materials, their Heterostructures and Devices., European Materials Research Society, May 2004, Strasbourg, France. pp.783-790, ⟨10.1016/j.spmi.2004.09.034⟩
Communication dans un congrès
istex
hal-01312254
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Evidence de l'interaction dipôle-dipôle dans la photoluminescence résolue en temps des boîtes quantiques GaN/AlN.Journées Nationales Micro- et Opto-électronique – Xèmes JNMO., Jun 2004, La Grande Motte, France
Communication dans un congrès
hal-01312278
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New model of electron-hole pair recombination in (Ga,In)N/GaN low-dimensional systems5th International Conference on Nitride Semiconductors - ICNS 5., May 2003, Nara, Japan
Communication dans un congrès
hal-01312484
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Two-dimensional “pseudo-donor–acceptor-pairs” model of recombination dynamics in InGaN/GaN quantum wellsInternational Conference on Superlattices, Nano-structures and Nano-devices - ICSNN 2002., Jul 2002, Toulouse, France. pp.64-67, ⟨10.1016/S1386-9477(02)00762-2⟩
Communication dans un congrès
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hal-01319596
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Coexistence in photoluminescence of free exciton and bound exciton in low nitrogen content GaInNAs layers5th International Conference on Nitride Semiconductors - ICNS 5., May 2003, Nara, Japan. pp.2631, ⟨10.1002/pssc.200303271⟩
Communication dans un congrès
istex
hal-01312489
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Optical properties of GaN/AlN quantum boxes under high photo-excitation5th International Conference on Nitride Semiconductors (ICNS-5), Axel Hoffmann, May 2003, Nara, Japan. pp.2666-2669, ⟨10.1002/pssc.200303270⟩
Communication dans un congrès
istex
hal-00543736
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Photo-induced interband absorption in group-III nitride quantum wellsInternational Conference on Superlattices, Nano-structures and Nano-devices - ICSNN 2002., Jul 2002, Toulouse, France. pp.247-249, ⟨10.1016/S1386-9477(02)00785-3⟩
Communication dans un congrès
istex
hal-01322938
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Original physical properties of low-dimensional systems based on group-III nitride semiconductors.1st E-MRS Fall Meeting ., European Materials Research Society, Sep 2003, Varsovie, Poland
Communication dans un congrès
hal-01312286
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Light-Hole and Heavy-Hole Excitons: the Right Probe for the Physics of Low N Content GaAsNInternational Workshop on Nitride Semiconductors (IWN 2002), Jul 2002, Aix-la-Chapelle, Germany. pp.778-781, ⟨10.1002/1521-3951(200212)234:3<778::AID-PSSB778>3.0.CO;2-H⟩
Communication dans un congrès
istex
hal-01319577
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Small Built-in Electric Fields in Quaternary InAlGaN HeterostructuresInternational Workshop on Nitride Semiconductors (IWN 2002), Jul 2002, Aix-la-Chapelle, Germany. pp.764-768, ⟨10.1002/1521-3951(200212)234:3<764::AID-PSSB764>3.0.CO;2-0⟩
Communication dans un congrès
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hal-01319469
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Optical properties of group-III nitride based quantum wells and quantum boxes.12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. , Jun 2002, Smolenice, Slovakia. pp.227 - 232 ⟨10.1109/SIM.2002.1242761⟩
Communication dans un congrès
hal-01316057
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Microcalorimetric absorption spectroscopy in GaN–AlGaN quantum wellsEuropean-MRS Spring Meeting - Symposium L : Nitrides and Related Wide Band Gap Materials, Jun 1998, Strasbourg, France. pp.319 - 322, ⟨10.1016/S0921-5107(98)00363-8⟩
Communication dans un congrès
istex
hal-01756610
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Highly Photo-Excited Nitride Quantum Wells: Threshold for Exciton Bleaching3rd International Conference on Nitride Semiconductors, Bernard GIL; Pierre LEFEBVRE, Jul 1999, Montpellier (FR), France. pp.481 - 486, ⟨10.1002/(SICI)1521-3951(199911)216:1<481::AID-PSSB481>3.0.CO;2-K⟩
Communication dans un congrès
istex
hal-01756604
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Optical properties of InGaN/GaN multiple quantum wells7th International Conference on Silicon Carbide, III-Nitrides and Related Materials (ICSCIII-N 97), Aug 1997, STOCKHOLM (SWEDEN), France. pp.1295-1298
Communication dans un congrès
hal-00543785
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Croissance de multi-puits quantiques dans le système (Al)GaInAs sur AlGaAsSb accordé sur InPSéminaire National : Epitaxie par Jets Moléculaires, 1997, Saint-Aygulf, France
Communication dans un congrès
hal-01904251
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Universal formulation of excitonic linear absorption spectra in all semiconductor microstructures7th International Conference on Superlattices Microstructures and Microdevices, Aug 1994, Banff, AB Canada, Canada. pp.19 - 21, ⟨10.1006/spmi.1995.1005⟩
Communication dans un congrès
istex
hal-01756638
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Universal formulation of excitonic linear absorption spectra in all semiconductor microstructures7th International Conference on Superlattices Microstructures and Microdevices, Aug 1994, Banff, AB Canada, Canada. pp.19 - 21, ⟨10.1006/spmi.1995.1005⟩
Communication dans un congrès
istex
hal-01756184
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General formalism for excitonic absorption edges in confined systems with arbitrary dimensionality3rd International Conference on Optics of Excitons in Confined Systems, Aug 1993, Montpellier, France. pp.377 - 380, ⟨10.1051/jp4:1993579⟩
Communication dans un congrès
hal-01756636
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Low dimensionality semiconductors: modelling of excitons via a fractional-dimensional space4èmes Journées de Microélectronique et Optoélectronique III-V, Oct 1992, La Grande Motte, France. pp.1783 - 1789, ⟨10.1051/jp3:1993237⟩
Communication dans un congrès
hal-01756634
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Hetero- and multi-quantum well structures in wide-gap II-VI semiconductorsE-MRS Advanced Research Workshop, Jan 1991, Montpellier, France. pp.A1 - A7, ⟨10.1088/0268-1242/6/9A/001⟩
Communication dans un congrès
istex
hal-01817883
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FINE STRUCTURE OF EXCITONS IN QUANTUM WELLSModulated Semiconductor Structures III, Jul 1987, Montpellier (France), France. pp.C5-549-C5-552, ⟨10.1051/jphyscol:19875118⟩
Communication dans un congrès
istex
jpa-00226701
v1
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Tuning GaN/AlGaN quantum well emission by deposition of Few-Layer Graphene and Nickel/Gold filmsICNS -14th International Conference on Nitride Semiconductors, Nov 2023, Fukuoka, Japan.
Poster de conférence
hal-04793643
v1
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Probing the Mott transition of indirect excitons in GaN/(AlGa)N heterostructuresInternational Workshop on Nitride Semiconductors (IWN 2022), Oct 2022, Berlin, Germany
Poster de conférence
hal-04874207
v1
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On the nature of light emission in polar GaN/(AlGa)N quantum wells.12th International Conference on Nitride Semiconductors – ICNS12., Jul 2017, Strasbourg, France.
Poster de conférence
hal-01907860
v1
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Transport of Indirect Excitons in Polar GaN/AlGaN Quantum Wells.Condensed Matter in Paris – CMD25 – JMC14. , Aug 2014, Paris, France.
Poster de conférence
hal-01305395
v1
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Transport of Indirect Excitons in Polar GaN/AlGaN Quantum Wells.Compound Semiconductor Week 2014, May 2014, Montpellier, France.
Poster de conférence
hal-01305161
v1
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Dipolar exciton fluids in (Al,Ga)N/GaN quantum wells14th International Conference on the Physics of Light-Matter Coupling in Nanostructures - PLMCN14, May 2013, Hersonissos, Crète, Greece.
Poster de conférence
hal-01306241
v1
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Time-resolved Photoluminescence spectroscopy of Zn1-XCdXO nanowires.International Workshop on ZnO and Related Materials., Sep 2012, Nice, France
Poster de conférence
hal-00708706
v1
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Role of the dielectric mismatch on the emission properties of GaN nanostructures.International Workshop on Nitride semiconductors (IWN 2012)., Oct 2012, Sapporo, Japan
Poster de conférence
hal-00708726
v1
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Optical properties of a hybrid nitride-ZnO microcavity.SPIE-OPTO-Photonic West. "Gallium Nitride Materials & Devices VII"., Jan 2012, San Francisco, United States
Poster de conférence
hal-00708677
v1
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Time-resolved photoluminescence of high-aluminum-content (Al,Ga)N quantum wells and epilayers emitting in the 215-255 nm range.International Workshop on Nitride semiconductors (IWN 2012)., Oct 2012, Sapporo, Japan
Poster de conférence
hal-00797472
v1
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Excitonic effects in GaN stacking faults and crystal phase quantum wellsInternational Conference on the Physics of Semiconductors, Jul 2012, Zürich, Switzerland
Poster de conférence
hal-00708666
v1
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Radiative Recombination Governed Lifetimes In Non-polar (Al,Ga)N/GaN Quantum Wells Grown On Bulk GaN Crystals.9th International Conference on Nitride Semiconductors. ICNS9., Jul 2011, Glasgow, United Kingdom
Poster de conférence
hal-00631755
v1
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Dynamics of cavity biexcitons in III-Nitride based multi quantum well MicrocavitiesOptics of Excitons in Confined Systems (OECS 12)., Sep 2011, Paris, France
Poster de conférence
hal-00631405
v1
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Radiative recombination limited lifetimes in non-polar (Al,Ga)N/GaN quantum wells grown on bulk GaN crystals.38th International Symposium on Compound Semiconductors - ISCS38., May 2011, Berlin, Germany
Poster de conférence
hal-00632230
v1
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Growth and Characterization of InGaN/GaN Quantum Dots for violet-blue Applications9th International Conference on Nitride Semiconductors - ICNS9., Jul 2011, Glasgow, United Kingdom
Poster de conférence
hal-00632224
v1
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Exciton relaxation and recombination mechanisms in a-plane GaN probed by time-resolved cathodoluminescence.10th International Workshop on Beam Injection Assessment of Microstructures in Semiconductors - BIAMS 2010, Jul 2010, Halle (Saale), Germany
Poster de conférence
hal-00634162
v1
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Radiative Recombination Limited Lifetimes in a-plane (Al,Ga)N/GaN single quantum wells grown on GaN.International Workshop on Nitride Semiconductors - IWN 2010, Sep 2010, Tampa, Floride., United States
Poster de conférence
hal-00633505
v1
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Radiative lifetimes of localized and free excitons in homoepitaxial non-polar (Al,Ga)N/GaN single quantum well.39 th International School and Conference on the Physics of Semiconductors., Jun 2010, Jaszowiec, Poland
Poster de conférence
hal-00634159
v1
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GaN nanocolumns grown on Si(111) by plasma-assisted MBE: Correlation of structural and optical properties with growth parameters.3rd International Symposium on Growth of III-Nitrides - ISGN3., Jul 2010, Montpellier, France
Poster de conférence
hal-00633536
v1
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MBE growth and characterization of InN/InGaN thin films and nanostructures on GaN templates and Si(111) substrates.16th International Conference on Molecular Beam Epitaxy (MBE 2010), Aug 2010, Berlin, Germany
Poster de conférence
hal-00633522
v1
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Exciton localization on basal stacking faults in a-plane GaN probed by picosecond time-resolved cathodoluminescence.Int. Conf. On Optics of Excitons in Confined Systems - OECS11., Sep 2009, Madrid, Spain
Poster de conférence
hal-00797193
v1
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Strong coupling of multiple branches polariton in a ZnO microcavity.Int. Conf. On Optics of Excitons in Confined Systems - OECS11., Sep 2009, Madrid, Spain
Poster de conférence
hal-00797194
v1
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Optical properties of V-pits in GaN through temperature-dependent picosecond Time-Resolved Cathodolminescence (pTRCL)Int. Conf. on Nitride Semiconductors - ICNS8., Oct 2009, Jeju, South Korea
Poster de conférence
hal-00797196
v1
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Spectroscopy of GaN nanocolumns grown by molecular beam epitaxy on Si.Meeting annuel de la Société Suisse de Physique., Mar 2008, Genève, Switzerland
Poster de conférence
hal-00797191
v1
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Which quasi-particle in wide band gap bulk microcavities?2nd International School on Nanophotonics , Sep 2007, Maratea, Italy.
Poster de conférence
hal-01306849
v1
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Excitons in GaN/AlGaN homoepitaxial quantum wells grown along the nonpolar (02-11) direction on bulk GaN substrates.6th International Conference on Nitride Semiconductors (ICNS6). , Aug 2006, Brème, Germany.
Poster de conférence
hal-01309939
v1
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ZnO / (Zn,Mg)O Quantum Wells : a Time Resolved Photoluminescence StudyInternational Symposium on Blue Lasers and Light Emitting Diodes – ISBLLED06., May 2006, Montpellier, France
Poster de conférence
hal-01309698
v1
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Determination of internal electric field in ZnO/(Zn,Mg)O quantum wells from time resolved photoluminescence experiments28th International Conference on the Physics of Semiconductors - ICPS 28. , Jul 2006, Vienne, Austria.
Poster de conférence
hal-01309701
v1
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Micro-photoluminescence of isolated hexagonal GaN/AlN quantum dots : role of the electron-hole dipoleWolfgang Jantsch; Friederich Schafler. 28th International Conference on the Physics of Semiconductors - ICPS 28. , Jul 2006, Vienne, Austria. AIP Publishing, AIP Conference Proceedings, 893, pp.941, 2007, PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors - ICPS 2006. ⟨10.1063/1.2730203⟩
Poster de conférence
hal-01309696
v1
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Localization effects in InGaN/GaN wide quantum well structures grown on bulk GaN crystals.6th International Conference on Nitride Semiconductors (ICNS6). , Aug 2006, Brème, Germany.
Poster de conférence
hal-01309942
v1
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Amélioration de l’efficacité radiative dans les puits quantiques à base d’(Al,Ga,In)N pour les composants optoélectroniquesJournées du GDR "Semiconducteurs à Grands Gaps"., May 2004, Fréjus, France
Poster de conférence
hal-01312280
v1
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Dynamique de recombinaison des porteurs dans des puits quantiques GaInAsN/GaAs.9èmes Journées de la Matière Condensée, Aug 2004, Nancy, France
Poster de conférence
hal-01312282
v1
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Malices et fourberies des boîtes quantiques GaN/AlN.Journées Nationales Micro- et Opto-électronique – Xèmes JNMO., Jun 2004, La Grande Motte, France.
Poster de conférence
hal-01312258
v1
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Continuous-wave versus time-resolved photo-luminescence of GaN/AlN quantum dots.Summer School "Semiconductor Quantum Dots: Physics and Devices"., Sep 2004, Ascona, Switzerland
Poster de conférence
hal-01312253
v1
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Carrier recombination dynamics in GaN/AlN quantum dots.EXMATEC'04 - 7th Int. Conf. on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies., Jun 2004, Montpellier, France
Poster de conférence
hal-01310832
v1
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Nonlinear optical absorption induced by high photo-excitation of group-III nitride based quantum wells5th International Conference on Nitride Semiconductors - ICNS 5., May 2003, Nara, Japan.
Poster de conférence
hal-01312666
v1
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Small internal electric fields in quaternary InGaAlN heterostructuresMichael Shur; Arturas Zukauskas. NATO Advanced Research Workshop on UV Solid State Light Emitters and Detectors., Jun 2003, Vilnius, Lithuania. Kluwer Academic Publisher, Dordrecht, Pays-Bas.; lOS Press, Amsterdam, Pays-Bas.; NATO Scientific Affairs Division., 144, pp.215-222, UV Solid-State Light Emitters and Detectors. NATO Science Series II: Mathematics, Physics and Chemistry. ⟨10.1007/978-1-4020-2103-9⟩
Poster de conférence
hal-01312494
v1
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Internal electric fields in quaternary InAlGaN heterostructures5th International Conference on Nitride Semiconductors - ICNS 5., May 2003, Nara, Japan.
Poster de conférence
hal-01312665
v1
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Evolution of internal electric fields with the wel thickness of quaternary InAlGaN quantum wellsJoint 19th AIRAPT - 41th EHPRG Int. Conf. on High Pressure Science and Technology , Jul 2003, Bordeaux, France
Poster de conférence
hal-01312667
v1
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Proceedings of the 7th International Conference on Optics and Excitons in Confined Systems (OECS7).Pierre Lefebvre; Gérald Bastard. 7th International Conference on Optics and Excitons in Confined Systems (OECS7)., Sep 2001, Montpellier, France. 190 (2-3), WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, pp.303-603 (Part 1) et 605-870 (Part 2), 2002, Proceedings of the 7th International Conference on Optics and Excitons in Confined Systems (OECS7)., ⟨10.1002/1521-396X(200204)190:2<303::AID-PSSA303>3.0.CO;2-B⟩
Proceedings/Recueil des communications
istex
hal-01312678
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Proceedings Symposium H, "GaN & Related Compounds". E-MRS Spring Meeting.Pierre Lefebvre; Enrique Calleja; Tadeusz Suski; Jürgen Christen; Hiroshi Amano; James Speck; Markus Kamp. E-MRS Spring Meeting. Symposium H, "GaN & Related Compounds". , Jun 2002, Strasbourg, France. 93 (1-3), Elsevier Science B.V., pp.1-245, 2002, ⟨10.1016/S0921-5107(02)00114-9⟩
Proceedings/Recueil des communications
istex
hal-01312713
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