Pierre Lefebvre

Pierre LEFEBVRE - Directeur de Recherche CNRS - Directeur du Laboratoire Charles Coulomb (L2C)
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Documents
Identifiants chercheurs

Présentation

Directeur de Recherche au CNRS. Spécialiste des propriétés optiques des puits quantiques et autres nanostructures à base de semiconducteurs, notamment les nitrures d'éléments III et le ZnO. Expert en modélisation et en diverses spectroscopies (photoluminescence simple ou résolue en temps, réflectivité, absorption...) permettant l'étude des excitons dans ces systèmes.

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Publications

Surface related optical properties of GaN-based nanowires.

Pierre Lefebvre
V. Consonni, G. Feuillet. Wide Band Gap Semiconductor Nanowires 1., John Wiley & Sons, Inc., Hoboken, NJ, USA., pp.59-79, 2014, Print: 978-1-84821-597-9. Online:9781118984321. ⟨10.1002/9781118984321.ch3⟩
Chapitre d'ouvrage hal-01061571 v1

Physics and optical properties of GaN-AlGaN quantum wells.

Pierre Lefebvre , Bernard Gil , Jean Massies , Nicolas Grandjean , Mathieu Leroux et al.
H. Jiang; O. Manasreh III-V Nitride Semiconductors : Optical Properties I, Taylor & Francis Books, pp.249, 2002, 1-56032-972-6
Chapitre d'ouvrage hal-01306468 v1
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Electrostatic modulation of excitonic fluid in GaN/AlGaN quantum wells by deposition of few-layer graphene and nickel/gold films

R. Aristegui , P. Lefebvre , C. Brimont , T. Guillet , M. Vladimirova et al.
Physical Review B, 2023, 108 (12), pp.125421. ⟨10.1103/PhysRevB.108.125421⟩
Article dans une revue hal-04251300 v1
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Effect of electric bias on trapping and release of excitons in GaN/(Al,Ga)N quantum wells

R. Aristegui , F. Chiaruttini , B. Jouault , P. Lefebvre , C. Brimont et al.
Physical Review B, 2022, 106 (3), pp.035429. ⟨10.1103/PhysRevB.106.035429⟩
Article dans une revue hal-03759667 v1
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Complexity of the dipolar exciton Mott transition in GaN/(AlGa)N nanostructures

François Chiaruttini , Thierry Guillet , Christelle Brimont , Denis Scalbert , Steeve Cronenberger et al.
Physical Review B, 2021, 103 (4), pp.045308. ⟨10.1103/PhysRevB.103.045308⟩
Article dans une revue hal-03014825 v2
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Trapping Dipolar Exciton Fluids in GaN/(AlGa)N Nanostructures

François Chiaruttini , Thierry Guillet , Christelle Brimont , Benoit Jouault , Pierre Lefebvre et al.
Nano Letters, 2019, 19 (8), pp.4911-4918. ⟨10.1021/acs.nanolett.9b00914⟩
Article dans une revue hal-02272702 v1
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Switching of exciton character in double InGaN/GaN quantum wells

T. Suski , G Staszczak , K P Korona , P. Lefebvre , E. Monroy et al.
Physical Review B, 2018, 98, ⟨10.1103/PhysRevB.98.165302⟩
Article dans une revue hal-01891681 v1
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Room-Temperature Transport of Indirect Excitons in (Al,Ga)N/GaN Quantum Wells

Fedor Fedichkin , Thierry Guillet , Pierre Valvin , Benoit Jouault , Christelle Brimont et al.
Physical Review Applied, 2016, 6 (1), pp.014011. ⟨10.1103/PhysRevApplied.6.014011⟩
Article dans une revue hal-01353893 v2
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Picosecond dynamics of free and bound excitons in doped diamond.

Julien Barjon , Pierre Valvin , Christelle Brimont , Pierre Lefebvre , Ovidiu Brinza et al.
Physical Review B, 2016, 93 (11), pp.115202. ⟨10.1103/PhysRevB.93.115202⟩
Article dans une revue hal-01287753 v1
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Transport of dipolar excitons in (Al,Ga)N/GaN quantum wells.

Fedor Fedichkin , Peristera Andreakou , Benoit Jouault , Maria Vladimirova , Thierry Guillet et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2015, 91 (20), pp.205424. ⟨10.1103/PhysRevB.91.205424⟩
Article dans une revue hal-01154792 v1
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Transport of indirect excitons in ZnO quantum wells.

Yuliya Kuznetsova , Fedor Fedichkin , Peristera Andreakou , Eric V. Calman , L. V. Butov et al.
Optics Letters, 2015, 40 (15), pp.3667-3670. ⟨10.1364/OL.40.003667⟩
Article dans une revue hal-01181619 v1
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VIS-UV ZnCdO/ZnO multiple quantum well nanowires and the quantification of Cd diffusion.

Manuel Lopez-Ponce , A. Nakamura , M. Suzuki , J. Temmyo , S. Agouram et al.
Nanotechnology, 2014, 25, pp.255202. ⟨10.1088/0957-4484/25/25/255202⟩
Article dans une revue hal-01009919 v1
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Light-Emitting-Diodes based on ordered InGaN nanocolumns emitting in the blue, green and yellow spectral range.

Ana Bengoechea-Encabo , Steven Albert , D. Lopez-Romero , Pierre Lefebvre , Francesca Barbagini et al.
Nanotechnology, 2014, 25 (43), pp.435203. ⟨10.1088/0957-4484/25/43/435203⟩
Article dans une revue hal-01073992 v1
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Sub-meV linewidth in GaN nanowire ensembles: Absence of surface excitons due to the field ionization of donors

Pierre Corfdir , Johannes K. Zettler , Christian Hauswald , Sergio Fernandez-Garrido , Oliver Brandt et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2014, 90 (20), pp.205301. ⟨10.1103/PhysRevB.90.205301⟩
Article dans une revue hal-01083398 v1
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Optical properties and microstructure of 2.02-3.30 eV ZnCdO nanowires: Effect of thermal annealing

Manuel Lopez-Ponce , A. Hierro , J.-M. Ulloa , Pierre Lefebvre , E. Munoz et al.
Applied Physics Letters, 2013, 102, pp.143103. ⟨10.1063/1.4799491⟩
Article dans une revue hal-00809307 v1

Three-dimensional magneto-photoluminescence as a probe of the electronic properties of crystal phase quantum disks in GaAs nanowires.

Pierre Corfdir , Barbara van Hattem , Emanuele Uccelli , Sonia Conesa-Boj , Pierre Lefebvre et al.
Nano Letters, 2013, 13 (11), pp.5303. ⟨10.1021/nl4028186⟩
Article dans une revue hal-00904133 v1
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Selective area growth and characterization of InGaN nano-disks implemented in GaN nanocolumns with different top morphologies.

Steven Albert , Ana Bengoechea-Encabo , Pierre Lefebvre , Francesca Barbagini , M.A. Sanchez-Garcia et al.
Applied Physics Letters, 2012, 100, pp.231906. ⟨10.1063/1.4728115⟩
Article dans une revue hal-00704507 v1
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Oxygen photo-adsorption related quenching of photoluminescence in group-III nitride nanocolumns.

Pierre Lefebvre , Steven Albert , Jelena Ristic , S. Fernandez-Garrido , J. Grandal et al.
Superlattices and Microstructures, 2012, 52, pp.165. ⟨10.1016/j.spmi.2012.05.001⟩
Article dans une revue hal-00704495 v1
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Thermal carrier emission and nonradiative recombinations in nonpolar(Al,Ga)N/GaN quantum wells grown on bulk GaN.

Pierre Corfdir , Amélie Dussaigne , H. Teisseyre , T. Suski , Izabella Grzegory et al.
Journal of Applied Physics, 2012, 111, pp.033517. ⟨10.1063/1.3681816⟩
Article dans une revue hal-00677582 v1
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Importance of excitonic effects and the question of internal electric fields in stacking faults and crystal phase quantum discs: the model-case of GaN.

Pierre Corfdir , Pierre Lefebvre
Journal of Applied Physics, 2012, 112 (5), pp.053512. ⟨10.1063/1.4749789⟩
Article dans une revue hal-00750406 v1
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Role of the dielectric mismatch on the properties of donors in semiconductor nanostructures bounded by air.

Pierre Corfdir , Pierre Lefebvre
Journal of Applied Physics, 2012, 112 (10), pp.106104. ⟨10.1063/1.4765031⟩
Article dans une revue hal-00758583 v1
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Impact of biexcitons on the relaxation mechanisms of polaritons in III-nitride based multi-quantum well microcavities.

P. Corfdir , J. Levrat , G. Rossbach , R. Butté , E. Feltin et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2012, 85 (24), pp.245308. ⟨10.1103/PhysRevB.85.245308⟩
Article dans une revue hal-00708277 v1
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Intrinsic dynamics of weakly and strongly confined excitons in nonpolar nitride-based heterostructures.

Pierre Corfdir , J. Levrat , Amélie Dussaigne , Pierre Lefebvre , H. Teisseyre et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 83 (24), pp.245326. ⟨10.1103/PhysRevB.83.245326⟩
Article dans une revue hal-00631188 v1
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Radiative defects in GaN nanocolumns: Correlation with growth conditions and sample morphology.

Pierre Lefebvre , S. Fernandez-Garrido , J. Grandal , J. Ristic , M.A. Sanchez-Garcia et al.
Applied Physics Letters, 2011, 98 (8), pp.083104. ⟨10.1063/1.3556643⟩
Article dans une revue hal-00631205 v1
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Emission control of InGaN nanocolumns grown by molecular-beam epitaxy on Si(111) substrates.

Steven Albert , Ana Bengoechea-Encabo , Pierre Lefebvre , M.A. Sanchez-Garcia , E. Calleja et al.
Applied Physics Letters, 2011, 99, pp.131108. ⟨10.1063/1.3644986⟩
Article dans une revue hal-00631167 v1
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Exciton recombination dynamics in a-plane (Al,Ga)N/GaN quantum wells probed by picosecond photo and cathodoluminescence.

P. Corfdir , Pierre Lefebvre , Laurent Balet , Samuel Sonderegger , Amélie Dussaigne et al.
Journal of Applied Physics, 2010, 107 (4), pp.043524. ⟨10.1063/1.3305336⟩
Article dans une revue hal-00632548 v1

One-dimensional exciton luminescence induced by extended defects in nonpolar GaN/(Al,Ga)N quantum wells.

Amélie Dussaigne , Pierre Corfdir , Jacques Levrat , T Zhu , Denis Martin et al.
Semiconductor Science and Technology, 2010, 26 (2), pp.025012. ⟨10.1088/0268-1242/26/2/025012⟩
Article dans une revue hal-01260924 v1
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Exciton localization on basal stacking faults in a-plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy

Pierre Corfdir , Pierre Lefebvre , Jacques Levrat , Amélie Dussaigne , Jean-Daniel Ganière et al.
Journal of Applied Physics, 2009, 105 (4), pp.043102. ⟨10.1063/1.3075596⟩
Article dans une revue hal-00390006 v1
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Time-resolved spectroscopy on GaN nanocolumns grown by plasma assisted molecular beam epitaxy on Si substrates

P. Corfdir , Pierre Lefebvre , J. Ristic , Pierre Valvin , E. Calleja et al.
Journal of Applied Physics, 2009, 105, pp.013113. ⟨10.1063/1.3062742⟩
Article dans une revue hal-00390003 v1
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Electron localization by a donor in the vicinity of a basal stacking fault in GaN.

P. Corfdir , Pierre Lefebvre , J. Ristic , Jean-Daniel Ganière , Benoit Deveaud-Plédran
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2009, 80 (15), pp.153309. ⟨10.1103/PhysRevB.80.153309⟩
Article dans une revue hal-00632552 v1
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Low-temperature time-resolved cathodoluminescence study of exciton dynamics involving basal stacking faults in a-plane GaN

Pierre Corfdir , Jelena Ristic , Pierre Lefebvre , Amélie Dussaigne , Denis Martin et al.
Applied Physics Letters, 2009, 94, pp.201115. ⟨10.1063/1.3142396⟩
Article dans une revue hal-00391736 v1
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Polarized emission of GaN/AlN quantum dots : single dot spectroscopy and symmetry-based theory

Richard Bardoux , Thierry Guillet , B. Gil , P. Lefebvre , T. Bretagnon et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2008, 77, pp.235315. ⟨10.1103/PhysRevB.77.235315⟩
Article dans une revue hal-00261181 v3
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Comparison of strong coupling regimes in bulk GaAs, GaN and ZnO semiconductor microcavities

Stéphane Faure , T. Guillet , P. Lefebvre , T. Bretagnon , B. Gil
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2008, 78, pp.235323. ⟨10.1103/PhysRevB.78.235323⟩
Article dans une revue hal-00327759 v1
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Optical properties of GaN/AlN quantum dots

Pierre Lefebvre , B. Gayral
Comptes Rendus. Physique, 2008, 9, pp.816. ⟨10.1016/j.crhy.2008.10.008⟩
Article dans une revue istex hal-00389996 v1

Contribution of long lived metastable states to the PL of InP dots in indirect band-gap barrier layers

Robert Seguin , Thierry Guillet , T. Taliercio , P. Lefebvre , T. Bretagnon et al.
European Physical Journal: Applied Physics, 2007, 37, pp.15. ⟨10.1051/epjap:2007006⟩
Article dans une revue istex hal-00389970 v1
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Barrier composition dependence of the internal electric field in ZnO∕Zn1−xMgxO quantum wells.

Thierry Bretagnon , Pierre Lefebvre , Thierry Guillet , Thierry Taliercio , Bernard Gil et al.
Applied Physics Letters, 2007, 90 (20), pp.201912. ⟨10.1063/1.2740576⟩
Article dans une revue hal-01304724 v1
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Time-resolved photoluminescence and optically stimulated luminescence measurements of picosecond-excited SrS:Ce,Sm phosphor

F. Ravotti , D. Benoit , P. Lefèbvre , P. Valvin , J.-R. Vaillé et al.
Journal of Applied Physics, 2007, 102 (12), pp.123102. ⟨10.1063/1.2822474⟩
Article dans une revue hal-00327469 v1
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Investigation of Non-Radiative Processes in InAs/(Ga,In)(N,As) Quantum Dots.

Maxime Hugues , Mirja Richter , Jean-Michel Chauveau , Benjamin Damilano , Jean-Yves Duboz et al.
Japanese Journal of Applied Physics, 2007, 46 (4L), pp.L317. ⟨10.1143/JJAP.46.L317⟩
Article dans une revue hal-01304760 v1
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Spin-exchange interaction in ZnO-based quantum wells.

Bernard Gil , Pierre Lefebvre , Thierry Bretagnon , Thierry Guillet , J.A. Sans et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2006, 74 (15), pp.153302. ⟨10.1103/PhysRevB.74.153302⟩
Article dans une revue hal-01304535 v1

Radiative lifetime of a single electron-hole pair in GaN∕AlN quantum dots.

Thierry Bretagnon , Pierre Lefebvre , Pierre Valvin , Richard Bardoux , Thierry Guillet et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2006, 73 (11), pp.113304. ⟨10.1103/PhysRevB.73.113304⟩
Article dans une revue hal-01304534 v1

Photoluminescence of single GaN∕AlN hexagonal quantum dots on Si(111): Spectral diffusion effects.

Richard Bardoux , Thierry Guillet , Pierre Lefebvre , Thierry Taliercio , Thierry Bretagnon et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2006, 74 (19), pp.195319. ⟨10.1103/PhysRevB.74.195319⟩
Article dans une revue hal-01304536 v1

Strong potential profile fluctuations and effective localization process in InGaN∕GaN multiple quantum wells grown on {10‐1m} faceted surface GaN template.

Soufien Haffouz , Hao Tang , J.A. Bardwell , Pierre Lefebvre , Thierry Bretagnon et al.
Journal of Applied Physics, 2006, 100 (1), pp.013528. ⟨10.1063/1.2214211⟩
Article dans une revue hal-01304537 v1

Internal electric field in wurtzite ZnO/Zn0.78Mg0.22O quantum wells.

Christian Morhain , Thierry Bretagnon , Pierre Lefebvre , X Tang , Pierre Valvin et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2005, 72 (24), pp.241305. ⟨10.1103/PhysRevB.72.241305⟩
Article dans une revue hal-01304048 v1

Localization Effects in InGaN/GaN Double Heterostructure Laser Diode Structures Grown on Bulk GaN Crystals.

Robert Czernecki , G. Franssen , Tadeusz Suski , T. Swietlik , J. Borysiuk et al.
Japanese Journal of Applied Physics, 2005, 44 (Part1 - N°10), pp.7244. ⟨10.1143/JJAP.44.7244⟩
Article dans une revue hal-01304041 v1

Efficient radiative recombination and potential profile fluctuations in low-dislocation InGaN∕GaN multiple quantum wells on bulk GaN substrates.

G. Franssen , S. Grzanka , Robert Czernecki , Tadeusz Suski , L Marona et al.
Journal of Applied Physics, 2005, 97 (10), pp.103507. ⟨10.1063/1.1897066⟩
Article dans une revue hal-01304034 v1

From GaAs:N to oversaturated GaAsN: Analysis of the band-gap reduction

T. Taliercio , R. Intartaglia , B. Gil , P. Lefèbvre , T. Bretagnon et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2004, 69 (7), pp.073303.1-073303.4. ⟨10.1103/PhysRevB.69.073303⟩
Article dans une revue hal-00330627 v1

Photoluminescence energy and linewidth in GaN/AlN stackings of quantum dot planes.

Sokratis Kalliakos , Thierry Bretagnon , Pierre Lefebvre , Thierry Taliercio , Bernard Gil et al.
Journal of Applied Physics, 2004, 96 (1), pp.180. ⟨10.1063/1.1753085⟩
Article dans une revue hal-01303942 v1

Observation and modeling of the time-dependent descreening of internal electric field in a wurtzite GaN/Al0.15Ga0.85N quantum well after high photoexcitation.

Pierre Lefebvre , Sokratis Kalliakos , Thierry Bretagnon , Pierre Valvin , Thierry Taliercio et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2004, 69 (3), pp.035307. ⟨10.1103/PhysRevB.69.035307⟩
Article dans une revue hal-01303935 v1

Isoelectronic traps in heavily doped GaAs:(In,N)

R. Intartaglia , T. Taliercio , P. Valvin , B. Gil , P. Lefèbvre et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2003, 68 (23), pp.235202.1-235202.5. ⟨10.1103/PhysRevB.68.235202⟩
Article dans une revue hal-00327975 v1

Donor-acceptor-like behavior of electron-hole pair recombinations in low-dimensional (Ga,In)N/GaN systems.

Aurélien Morel , Pierre Lefebvre , Sokratis Kalliakos , Thierry Taliercio , Thierry Bretagnon et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2003, 68 (4), pp.045331. ⟨10.1103/PhysRevB.68.045331⟩
Article dans une revue hal-01303919 v1

Determination of built-in electric fields in quaternary InAlGaN heterostructures.

Henryk Teisseyre , Tadeusz Suski , S. Lepkowsky , Stéphanie Anceau , Piotr Perlin et al.
Applied Physics Letters, 2003, 82 (10), pp.1541. ⟨10.1063/1.1559948⟩
Article dans une revue hal-01303282 v1

Nonlinear behavior of photoabsorption in hexagonal nitride quantum wells due to free carrier screening of the internal fields.

Sokratis Kalliakos , Pierre Lefebvre , Thierry Taliercio
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2003, 67 (20), pp.205307. ⟨10.1103/PhysRevB.67.205307⟩
Article dans une revue hal-01303911 v1

Time dependence of the photoluminescence of GaN/AlN quantum dots under high photoexcitation.

Thierry Bretagnon , Sokratis Kalliakos , Pierre Lefebvre , Pierre Valvin , Bernard Gil et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2003, 68 (20), pp.205301. ⟨10.1103/PhysRevB.68.205301⟩
Article dans une revue hal-01303926 v1

Micro Epitaxial lateral overgrowth of GaN/sapphire by Metal Organic Vapour Phase Epitaxy.

Eric Frayssinet , Bernard Beaumont , Jean-Pierre Faurie , Pierre Gibart , Zsolt Makkai et al.
MRS Internet Journal of Nitride Semiconductor Research, 2002, 7, pp.8
Article dans une revue hal-01303258 v1

Large size dependence of exciton-longitudinal-optical-phonon coupling in nitride-based quantum wells and quantum boxes.

Sokratis Kalliakos , Xuebin Zhang , Thierry Taliercio , Pierre Lefebvre , Bernard Gil et al.
Applied Physics Letters, 2002, 80 (3), pp.428. ⟨10.1063/1.1433165⟩
Article dans une revue hal-01303257 v1

Time-resolved spectroscopy of (Al,Ga,In)N based quantum wells: Localization effects and effective reduction of internal electric fields.

Pierre Lefebvre , Stéphanie Anceau , Pierre Valvin , Thierry Taliercio , Leszek Konczewicz et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2002, 66 (19), pp.195330. ⟨10.1103/PhysRevB.66.195330⟩
Article dans une revue hal-01303261 v1

Effects of GaAlN barriers and of dimensionality on optical recombination processes in InGaN quantum wells and quantum boxes.

Pierre Lefebvre , Thierry Taliercio , Aurélien Morel , Jacques Allègre , Mathieu Gallart et al.
Applied Physics Letters, 2001, 78 (11), pp.1538. ⟨10.1063/1.1352664⟩
Article dans une revue hal-01303205 v1

Exclusion principle and screening of excitons in GaN/AlxGa1−xN quantum wells.

Pierre Bigenwald , Alexey Kavokin , Bernard Gil , Pierre Lefebvre
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2001, 63 (3), pp.035315. ⟨10.1103/PhysRevB.63.035315⟩
Article dans une revue hal-01303201 v1

Influence of electron-phonon interaction on the optical properties of III nitride semiconductors.

Xuebin Zhang , Thierry Taliercio , Sokratis Kalliakos , Pierre Lefebvre
Journal of Physics: Condensed Matter, 2001, 13 (32), pp.7053. ⟨10.1088/0953-8984/13/32/312⟩
Article dans une revue hal-01303256 v1

Cw and time-resolved spectroscopy in homoepitaxial GaN films and GaN-GaAlN quantum wells grown by molecular beam epitaxy.

Thierry Taliercio , Mathieu Gallart , Pierre Lefebvre , Aurélien Morel , Bernard Gil et al.
Solid State Communications, 2001, 117 (7), pp.445. ⟨10.1016/S0038-1098(00)00475-0⟩
Article dans une revue istex hal-01302922 v1

Carrier relaxation dynamics for As defects in GaN.

Bernard Gil , Aurélien Morel , Thierry Taliercio , Pierre Lefebvre , C.T. Foxon et al.
Applied Physics Letters, 2001, 79 (1), pp.69. ⟨10.1063/1.1380400⟩
Article dans une revue hal-01303208 v1

Optical properties of group-III nitride quantum wells and quantum boxes.

Thierry Taliercio , Pierre Lefebvre , Aurélien Morel , Bernard Gil
Journal of Physics: Condensed Matter, 2001, 13 (32), pp.7027. ⟨10.1088/0953-8984/13/32/310⟩
Article dans une revue hal-01303255 v1

High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy.

Pierre Lefebvre , Aurélien Morel , Mathieu Gallart , Thierry Taliercio , Jacques Allègre et al.
Applied Physics Letters, 2001, 78 (9), pp.1252. ⟨10.1063/1.1351517⟩
Article dans une revue hal-01303203 v1

Optical properties of GaN epilayers and GaN/AlGaN quantum wells grown by molecular beam epitaxy on GaN(0001) single crystal substrate.

Nicolas Grandjean , Benjamin Damilano , Jean Massies , Gérard Neu , M Teissere et al.
Journal of Applied Physics, 2000, 88 (1), pp.183. ⟨10.1063/1.373640⟩
Article dans une revue hal-01302893 v1

Excitons and Trions Confined on CdTe Nano-Islands: Optical Tuning of the Dielectric Response.

Thierry Taliercio , Pierre Lefebvre , Vincent Calvo , Noël Magnéa , Henry Mathieu et al.
physica status solidi (b), 2000, 220 (2), pp.875. ⟨10.1002/(SICI)1521-3951(200008)220:2<875::AID-PSSB875>3.0.CO;2-W⟩
Article dans une revue istex hal-01302898 v1

Strain effects in GaN epilayers.

Bernard Gil , Pierre Lefebvre , Hadis Morkoc
Comptes Rendus de l'Academie des Sciences. Série IV, Physique, Astronomie, 2000, 1 (1), pp.51. ⟨10.1016/S1296-2147(00)00101-3⟩
Article dans une revue istex hal-01302886 v1

Electron-hole plasma effect on excitons in GaN/AlxGa1−xN quantum wells.

Pierre Bigenwald , Alexey Kavokin , Bernard Gil , Pierre Lefebvre
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2000, 61 (23), pp.15621. ⟨10.1103/PhysRevB.61.15621⟩
Article dans une revue hal-01302903 v1

Barrier-width dependence of group-III nitrides quantum-well transition energies.

Mathieu Leroux , Nicolas Grandjean , Jean Massies , Bernard Gil , Pierre Lefebvre et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1999, 60 (3), pp.1496. ⟨10.1103/PhysRevB.60.1496⟩
Article dans une revue hal-01302659 v1

Time-resolved photoluminescence as a probe of internal electric fields in GaN-(GaAl)N quantum wells.

Pierre Lefebvre , Jacques Allègre , Bernard Gil , Henry Mathieu , Nicolas Grandjean et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1999, 59 (23), pp.15363. ⟨10.1103/PhysRevB.59.15363⟩
Article dans une revue hal-01302335 v1

Photoreflectance investigations of the bowing parameter in AlGaN alloys lattice-matched to GaN.

Tj Ochalski , Bernard Gil , Pierre Lefebvre , Nicolas Grandjean , Mathieu Leroux et al.
Applied Physics Letters, 1999, 74 (22), pp.3353. ⟨10.1063/1.123342⟩
Article dans une revue hal-01302666 v1

Observation of long-lived oblique excitons in GaN-AlGaN multiple quantum wells

B. Gil , P. Lefebvre , J. Allègre , H. Mathieu , N. Grandjean et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1999, 59 (15), pp.10246 - 10250. ⟨10.1103/PhysRevB.59.10246⟩
Article dans une revue hal-01756619 v1

Photoreflectance spectroscopy as a powerful tool for the investigation of GaN-AlGaN quantum well structures

Tj Ochalski , Bernard Gil , Pierre Lefebvre , N. Grandjean , J. Massies et al.
Solid State Communications, 1999, 109, pp.567-571
Article dans une revue hal-00546569 v1

Observation of long-lived oblique excitons in GaN-AlGaN multiple quantum wells.

Bernard Gil , Pierre Lefebvre , Jacques Allègre , Henry Mathieu , Nicolas Grandjean et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1999, 59 (15), pp.10246. ⟨10.1103/PhysRevB.59.10246⟩
Article dans une revue hal-01302655 v1

Recombination dynamics of free and localized excitons in GaN/Ga0.93Al0.07N quantum wells

Pierre Lefebvre , Jacques Allègre , Bernard Gil , Alexei Kavokin , Henry Mathieu et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1998, 57 (16), pp.R9447. ⟨10.1103/PhysRevB.57.R9447⟩
Article dans une revue hal-01287782 v1

Optical studies of ultrashort-period GaAs/AlAs superlattices grown on (In,Ga)As pseudosubstrate.

Mohammed Rezki , A.M. Vasson , Aime Vasson , Pierre Lefebvre , Vincent Calvo et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1998, 58 (12), pp.R7540. ⟨10.1103/PhysRevB.58.R7540⟩
Article dans une revue hal-01288966 v1

Quantum confined Stark effect due to built-in internal polarization fields in (Al,Ga)N/GaN quantum wells.

Mathieu Leroux , Nicolas Grandjean , M. Laügt , Jean Massies , Bernard Gil et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1998, 58 (20), pp.R13371. ⟨10.1103/PhysRevB.58.R13371⟩
Article dans une revue hal-01291688 v1

Optical properties versus growth conditions of CdTe submonolayers inserted in ZnTe quantum wells.

Vincent Calvo , Noël Magnéa , Thierry Taliercio , Pierre Lefebvre , Jacques Allègre et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1998, 58 (23), pp.15736. ⟨10.1103/PhysRevB.58.15736⟩
Article dans une revue hal-01302330 v1

Charged excitons trapped on monomolecular CdTe islands in wide ZnTe-(Zn,Mg)Te quantum wells.

Thierry Taliercio , Pierre Lefebvre , Vincent Calvo , Denis Scalbert , Noël Magnéa et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1998, 58 (23), pp.15408. ⟨10.1103/PhysRevB.58.15408⟩
Article dans une revue hal-01302334 v1

Distinct center-of-mass quantization of light-hole and heavy-hole excitons in wide ZnTe-(Zn,Mg)Te quantum wells.

Pierre Lefebvre , Vincent Calvo , Noël Magnéa , Thierry Taliercio , Jacques Allègre et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1997, 56 (16), pp.R10040. ⟨10.1103/PhysRevB.56.R10040⟩
Article dans une revue hal-01260899 v1

Optical absorption of type-II superlattices.

Stephan Glutsch , Pierre Lefebvre , Daniel S. Chemla
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1997, 55 (23), pp.15786. ⟨10.1103/PhysRevB.55.15786⟩
Article dans une revue hal-01237153 v1

Analytical model for the refractive index in quantum wells derived from the complex dielectric constant of Wannier excitons in noninteger dimensions.

Christian Tanguy , Pierre Lefebvre , Henry Mathieu , R.J. Elliott
Journal of Applied Physics, 1997, 82 (2), pp.798. ⟨10.1063/1.365580⟩
Article dans une revue hal-01260885 v1

Dynamics of photoluminescence in medium-size CdSe quantum crystallites.

Pierre Lefebvre , Henry Mathieu , Jacques Allègre , Tristan Richard , Anne Combette-Roos et al.
Semiconductor Science and Technology, 1997, 12 (8), pp.958. ⟨10.1088/0268-1242/12/8/005⟩
Article dans une revue istex hal-01260896 v1

Optical investigation of CdTe monomolecular islands in wide ZnTe/(Zn,Mg)Te quantum wells: Evidence of a vertical self-ordering.

Pierre Lefebvre , Vincent Calvo , Noël Magnéa , Thierry Taliercio , Jacques Allègre et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1997, 56 (7), pp.3907. ⟨10.1103/PhysRevB.56.3907⟩
Article dans une revue hal-01260891 v1

Effects of finite spin-orbit splitting on optical properties of spherical semiconductor quantum dots.

Tristan Richard , Pierre Lefebvre , Henry Mathieu , Jacques Allègre
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1996, 53 (11), pp.7287. ⟨10.1103/PhysRevB.53.7287⟩
Article dans une revue hal-01179203 v1

Measurement of the optical band gap and crystal-field splitting in wurtzite CdTe.

Pierre Lefebvre , Tristan Richard , Jacques Allègre , Henry Mathieu , Anne Combette-Roos et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1996, 53 (23), pp.15440. ⟨10.1103/PhysRevB.53.15440⟩
Article dans une revue hal-01179205 v1

Evidence of the ordered growth of monomolecular ZnTe islands in CdTe/(Cd,Zn)Te quantum wells on a nominal (001) surface.

Vincent Calvo , Pierre Lefebvre , Jacques Allègre , A. Bellabchara , Henry Mathieu et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1996, 53 (24), pp.R16164. ⟨10.1103/PhysRevB.53.R16164⟩
Article dans une revue hal-01233762 v1

Quantum wells with zero valence-band offset: Drastic enhancement of forbidden excitonic transitions.

A.V. Kavokin , M.A. Kaliteevski , S.V Goupalov , J.D. Berger , O. Lyngnes et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1996, 54 (16), pp.R11078. ⟨10.1103/PhysRevB.54.R11078⟩
Article dans une revue hal-01233781 v1

Influence of spin-orbit split-off band on optical properties of spherical semiconductor nanocrystals. The case of CdTe.

Pierre Lefebvre , Tristan Richard , Henry Mathieu , Jacques Allègre
Solid State Communications, 1996, 98 (4), pp.303. ⟨10.1016/0038-1098(96)00044-0⟩
Article dans une revue istex hal-01233756 v1

Quantum confinement effects of CdS nanocrystals in a sodium borosilicate glass prepared by the sol-gel process.

Henry Mathieu , Tristan Richard , Jacques Allègre , Pierre Lefebvre , Gérald Arnaud et al.
Journal of Applied Physics, 1995, 77 (1), pp.287. ⟨10.1063/1.359389⟩
Article dans une revue hal-01178746 v1

Confined excitons in semiconductors: Correlation between binding energy and spectral absorption shape.

Pierre Lefebvre , Philippe Christol , Henry Mathieu , Glutsch Stephan
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1995, 52 (8), pp.5756. ⟨10.1103/PhysRevB.52.5756⟩
Article dans une revue hal-01178748 v1

Improved modeling of excitons in type-II semiconductor heterostructures by use of a three-dimensional variational function.

A. Bellabchara , Pierre Lefebvre , Philippe Christol , Henry Mathieu
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1994, 50 (16), pp.11840. ⟨10.1103/PhysRevB.50.11840⟩
Article dans une revue hal-01176125 v1

A single equation describes excitonic absorption spectra in all quantum-sized semiconductors.

Philippe Christol , Pierre Lefebvre , Henry Mathieu
IEEE Journal of Quantum Electronics, 1994, 30 (10), pp.2287. ⟨10.1109/3.328597⟩
Article dans une revue hal-01176124 v1
Image document

Low dimensionality semiconductors: modelling of excitons via a fractional-dimensional space

Philippe Christol , P. Lefebvre , H. Mathieu
Journal de Physique III, 1993, 3 (9), pp.1783-1789. ⟨10.1051/jp3:1993237⟩
Article dans une revue jpa-00249040 v1
Image document

General formalism for excitonic absorption edges in confined systems with arbitrary dimensionality

P. Lefebvre , Philippe Christol , H. Mathieu
Journal de Physique IV Proceedings, 1993, 03 (C5), pp.C5-377-C5-380. ⟨10.1051/jp4:1993579⟩
Article dans une revue jpa-00251666 v1

Uniaxial-stress investigation of asymmetrical GaAs-(Ga,Al)As double quantum wells.

Bernard Gil , Pierre Lefebvre , Bonnel Philippe , Henry Mathieu , Christiane Deparis et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1993, 47 (4), pp.1954. ⟨10.1103/PhysRevB.47.1954⟩
Article dans une revue hal-01176102 v1

Unified formulation of excitonic absorption spectra of semiconductor quantum wells, superlattices, and quantum wires.

Pierre Lefebvre , Philippe Christol , Henry Mathieu
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1993, 48 (23), pp.17308. ⟨10.1103/PhysRevB.48.17308⟩
Article dans une revue hal-01176109 v1

Fractional‐dimensional calculation of exciton binding energies in semiconductor quantum wells and quantum‐well wires.

Philippe Christol , Pierre Lefebvre , Henry Mathieu
Journal of Applied Physics, 1993, 74 (9), pp.5626. ⟨10.1063/1.354224⟩
Article dans une revue hal-01176107 v1

Excitons in semiconductor quantum wells: A straightforward analytical calculation

Henry Mathieu , Pierre Lefebvre , Philippe Christol
Journal of Applied Physics, 1992, 72 (1), pp.300. ⟨10.1063/1.352137⟩
Article dans une revue hal-01175835 v1

Photoreflectance and piezophotoreflectance studies of strained-layer InxGa1-xAs quantum wells.

Arnaud Gérald , Jacques Allègre , Pierre Lefebvre , Henry Mathieu , L.K. Howard et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1992, 46 (23), pp.15290. ⟨10.1103/PhysRevB.46.15290⟩
Article dans une revue hal-01176053 v1

Optical properties of InGaAs films embedded in plasma etched InP wells.

A. Georgakilas , Christou A. , Pierre Lefebvre , Jacques Allègre , K. Zekentes et al.
Applied Physics Letters, 1992, 61 (7), pp.798. ⟨10.1063/1.107805⟩
Article dans une revue hal-01176049 v1

Simple analytical method for calculating exciton binding energies in semiconductor quantum wells

Henry Mathieu , Pierre Lefebvre , Philippe Christol
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1992, 46 (7), pp.4092. ⟨10.1103/PhysRevB.46.4092⟩
Article dans une revue hal-01175849 v1

Influence of the spin-orbit split-off valence band in InGaAs/AlGaAs strained-layer quantum wells.

Bernard Gil , L.K. Howard , David J. Dunstan , Boring Philippe , Pierre Lefebvre
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1992, 45 (7), pp.3906. ⟨10.1103/PhysRevB.45.3906⟩
Article dans une revue hal-01175827 v1

Excitons in semiconductor superlattices: Heuristic description of the transfer between Wannier-like and Frenkel-like regimes.

Pierre Lefebvre , Philippe Christol , Henry Mathieu
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1992, 46 (20), pp.13603. ⟨10.1103/PhysRevB.46.13603⟩
Article dans une revue hal-01176050 v1

Resonant tunneling via stress-induced valence-band mixings in GaAs-(Ga,Al)As asymmetrical double quantum wells

Pierre Lefebvre , Bonnel Philippe , Bernard Gil , Henry Mathieu
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1991, 44 (11), pp.5635. ⟨10.1103/PhysRevB.44.5635⟩
Article dans une revue hal-01175824 v1

Valence-band coupling in thin (Ga,In)As-AlAs strained quantum wells.

Bernard Gil , Pierre Lefebvre , P. Boring , Karen J. Moore , Geoffrey Duggan et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1991, 44 (4), pp.1942. ⟨10.1103/PhysRevB.44.1942⟩
Article dans une revue hal-01175678 v1

Reflectance study of inter-well couplings in GaAs-(Ga,Al)As double quantum wells.

Bonnel Philippe , Pierre Lefebvre , Bernard Gil , Henry Mathieu , Christiane Deparis et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1990, 42 (6), pp.3435. ⟨10.1103/PhysRevB.42.3435⟩
Article dans une revue hal-01175677 v1

Electronic structure of (1 1 3)-grown GaAs-(GaAl)As single quantum wells under biaxial strain fields.

Youness El Khalifi , Pierre Lefebvre , Jacques Allègre , Bernard Gil , Henry Mathieu et al.
Solid State Communications, 1990, 75 (8), pp.677. ⟨10.1016/0038-1098(90)90223-X⟩
Article dans une revue istex hal-01175668 v1

Symmetry of conduction states for GaAs-AlAs type II superlattices from uniaxial stress.

Pierre Lefebvre , Bernard Gil , Henry Mathieu , Planel Richard
Physical Review B: Condensed Matter (1978-1997), 1989, 39 (8), pp.5550. ⟨10.1103/PhysRevB.39.5550⟩
Article dans une revue hal-01175665 v1

Piezospectroscopy of GaAs-AlAs superlattices.

Pierre Lefebvre , Bernard Gil , Henry Mathieu , Planel Richard
Physical Review B: Condensed Matter (1978-1997), 1989, 40 (11), pp.7802. ⟨10.1103/PhysRevB.40.7802⟩
Article dans une revue hal-01175666 v1

Band offset and lattice mismatch effects in strained-layer CdTe-ZnTe superlattices.

Henry Mathieu , Jacques Allègre , A Chatt , Pierre Lefebvre , Jp Faurie
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1988, 38 (11), pp.9. ⟨10.1103/PhysRevB.38.7740⟩
Article dans une revue hal-01175590 v1

Reflectance spectroscopy on GaAs-Ga0.5Al0.5As single quantum wells, under in-plane uni¬axial stress, at liquid helium temperature.

Bernard Gil , Pierre Lefebvre , Henry Mathieu , G. Platero , M. Altarelli et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1988, 38 (2), pp.6. ⟨10.1103/PhysRevB.38.1215⟩
Article dans une revue hal-01175583 v1

Exchange effects on excitons in quantum wells.

Yong Chen , Bernard Gil , Pierre Lefebvre , Henry Mathieu
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1988, 37 (11), pp.4. ⟨10.1103/PhysRevB.37.6429⟩
Article dans une revue hal-01175568 v1
Image document

Magnetoexcitons in a narrow single GaAs-Ga0.5Al0.5As quantum well grown by Molecular Beam Epitaxy.

Pierre Lefebvre , Bernard Gil , J.P Lascaray , Henry Mathieu , Dieter Bimberg et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1988, 37 (8), pp.4171. ⟨10.1103/PhysRevB.37.4171⟩
Article dans une revue hal-01175578 v1

Effect of hydrostatic pressure on GaAs-Ga1-xAlxAs microstructures.

Pierre Lefebvre , Bernard Gil , Henry Mathieu
Physical Review B: Condensed Matter (1978-1997), 1987, 35 (11), pp.5. ⟨10.1103/PhysRevB.35.5630⟩
Article dans une revue hal-01175550 v1

Nonparabolic behavior of GaSb-AlSb quantum wells under hydrostatic pressure.

Pierre Lefebvre , Bernard Gil , Jacques Allègre , Henry Mathieu , Raisin Claude
Physical Review B: Condensed Matter (1978-1997), 1987, 35 (3), pp.6. ⟨10.1103/PhysRevB.35.1230⟩
Article dans une revue hal-01175485 v1
Image document

Microstructures III-V sous pression hydrostatique

P. Lefebvre , B. Gil , H. Mathieu
Revue de Physique Appliquée, 1987, 22 (8), pp.859-866. ⟨10.1051/rphysap:01987002208085900⟩
Article dans une revue istex jpa-00245624 v1

Differential spectroscopy of GaAs-Ga1-xAlxAs quantum wells : an unambiguous identifica¬tion of light-hole and heavy-hole states.

Henry Mathieu , Pierre Lefebvre , Jacques Allègre , Bernard Gil , A. Regreny
Physical Review B: Condensed Matter (1978-1997), 1987, 36 (12), pp.4. ⟨10.1103/PhysRevB.36.6581⟩
Article dans une revue hal-01175558 v1

Complexity of dipolar exciton Mott transition in GaN/(AlGa)N nanostructures

Masha Vladimirova , François Chiaruttini , Thierry Guillet , Christelle Brimont , Denis Scalbert et al.
Optics of Excitons in Confined Systems, University of Dortmund, Aug 2021, Dortmund, Germany
Communication dans un congrès hal-04878035 v1

Controlled and thermalized indirect exciton fluids in a GaN/AlGaN quantum well with electrostatic traps

Thierry Guillet , François Chiaruttini , Christelle Brimont , Benoit Jouault , Pierre Lefebvre et al.
20th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN19), Jul 2019, Suzdal, Russia
Communication dans un congrès hal-04874180 v1

Control Over Dipolar Exciton Fluids in GaN/(AlGa)N Nanostructures

Maria Vladimirova , François Chiaruttini , Thierry Guillet , Christelle Brimont , Benoit Jouault et al.
13th International Conference on Nitride Semiconductors (ICNS-13), Jul 2019, Bellevue, United States
Communication dans un congrès hal-02466858 v1

Control over dipolar exciton fluids in GaN/(AlGa)N nanostructures

Maria Vladimirova , François Chiaruttini , Thierry Guillet , Christelle Brimont , Pierre Lefebvre et al.
5th INTERNATIONAL CONFERENCE ON QUANTUM TECHNOLOGIES, Jul 2019, Moscou, Russia
Communication dans un congrès hal-02466887 v1

Phase transition of indirect excitons in GaN quantum wells.

Thierry Guillet , François Chiaruttini , Christelle Brimont , Thierry Bretagnon , Laetitia Doyennette et al.
International Workshop on Nitride semiconductors - IWN2018., Nov 2018, Kanazawa, Japan
Communication dans un congrès hal-01910225 v1

Trapping dynamics of indirect excitons into electrostatic traps in GaN quantum wells.

Thierry Guillet , François Chiaruttini , Christelle Brimont , Thierry Bretagnon , Laetitia Doyennette et al.
TERAMETANANO-3: Terahertz Emission, Metamaterials and Nanophotonics., Alexey Kavokin - Jerome Tignon - Timothy C. H. Liew - Pavel Belov, Mar 2018, Uxmal, Mexico
Communication dans un congrès hal-01908823 v1

Electrostatic trapping of indirect excitons in GaN/AlGaN quantum wells.

François Chiaruttini , Thierry Guillet , Christelle Brimont , Thierry Bretagnon , Laetitia Doyennette et al.
International Conference on the Physics of Semiconductors, Jul 2018, Montpellier, France
Communication dans un congrès hal-01907806 v1

Switching of exciton character in double InGaN/GaN quantum wells.

T. Suski , G Staszczak , K Korona , Pierre Lefebvre , E. Monroy et al.
International Workshop on Nitride semiconductors - IWN2018., Nov 2018, Kanazawa, Japan
Communication dans un congrès hal-01908886 v1

Indirect Excitons in Group III-Nitride-Based Quantum Wells.

Pierre Lefebvre , Benoit Jouault , Thierry Guillet , Christelle Brimont , Pierre Valvin et al.
CIMTEC 2018 - 14th Intl Conference on Modern Materials and Technologies - 8th Forum on New Materials, Shuji NAKAMURA; University of California; USA (Honorary Chair) Michele MUCCINI; CNR-ISMN; Italy (C, Jun 2018, Pérouse, Italy
Communication dans un congrès hal-01908795 v1

Homogeneous versus inhomogeneous broadening of the photoluminescence in polar GaN/(AlGa)N quantum wells.

Masha Vladimirova , Thierry Guillet , Benoit Jouault , Christelle Brimont , Denis Scalbert et al.
International Conference on Physics of Light-Matter Coupling in Nanostructures – PLMCN18., Sven Höfling, Alexei Kavokin, Jul 2017, Würtzburg, Germany
Communication dans un congrès hal-01908565 v1

Indirect excitons in polar GaN/(AlGa)N quantum wells

Maria Vladimirova , Thierry Guillet , Christelle Brimont , Pierre Lefebvre , Thierry Bretagnon et al.
International school/colloquium in honor of E. Gross, Oct 2017, St-Petersbourg, Russia
Communication dans un congrès hal-01932812 v1

On the nature of light emission in polar GaN/(AlGa)N quantum wells

Maria Vladimirova , Thierry Guillet , Christelle Brimont , Denis Scalbert , Benoit Jouault et al.
International Conference on Hybrid Photonics and Materials, Sep 2017, Miconos, Greece
Communication dans un congrès hal-01932705 v1

Transport of indirect excitons in GaN quantum wells.

Thierry Guillet , Benoit Jouault , Fedor Fedichkin , Pierre Lefebvre , Christelle Brimont et al.
International Workshop on Nitride Semiconductors (IWN 2016), Alan Doolittle, Tomás Palacios, Stacia Keller, Siddharth Rajan, Oct 2016, Orlando, United States
Communication dans un congrès hal-01388983 v1

Indirect excitons in polar group III nitride quantum wells.

Fedor Fedichkin , Benoit Jouault , Thierry Guillet , Christelle Brimont , Pierre Valvin et al.
8th International Conference on Materials Science and Condensed Matter Physics, Leonid Kulyuk, Sep 2016, Chisinau, Moldova
Communication dans un congrès hal-01388929 v1

Picosecond dynamics of free and bound excitons in doped diamond

Julien Barjon , Pierre Valvin , Christelle Brimont , Pierre Lefebvre , Ovidiu Brinza et al.
Hasselt Diamond Workshop 2016 - SBDD XXI, Miloš Nesládek, Mar 2016, Hasselt, Belgium. ⟨10.1103/PhysRevB.93.115202⟩
Communication dans un congrès hal-01306898 v1

Searching for Indirect Excitons in Coupled Double InGaN/GaN Quantum Wells

Tadeusz Suski , Grzegorz Staszczak , Pierre Lefebvre , Krzysztof Piotr Korona , Piotr Drozdz et al.
International Workshop on Nitride Semiconductors (IWN 2016), Oct 2016, Orlando, United States
Communication dans un congrès hal-01389862 v1

Indirect excitons in AlGaN/GaN polar quantum wells.

Maria Vladimirova , Benoit Jouault , Fedor Fedichkin , Thierry Guillet , Christelle Brimont et al.
17th International Conference on Physics of Light-Matter Coupling in Nanostructures – PLMCN17., Yasuhiko Arakawa, Mar 2016, Nara, Japan
Communication dans un congrès hal-01388908 v1

Indirect excitons in wide band gap semiconductors.

Fedor Fedichkin , Benoit Jouault , Thierry Guillet , Christelle Brimont , Pierre Valvin et al.
International School on Nanophotonics and Photovoltaics. INSP 2015., MISP : Mediterranean Institute of Fundamental Physics, Sep 2015, Cefalu, Italy
Communication dans un congrès hal-01389731 v1

Transport of Indirect Excitons in Polar GaN/AlGaN Quantum Well Structures Grown on Sapphire and GaN Substrates.

Fedor Fedichkin , Benoit Jouault , Maria Vladimirova , Thierry Guillet , Christelle Brimont et al.
Collective Electronic Excitations in 2D (CEE 2D 2015) - INDEX Conference, François Dubin, ICFO (ES); Vittorio Pellegrini, Scuola Normale Superiore & IIT (IT); Aron Pinczuk, Columbia University (USA); David Ritchie, University of Cambridge (UK); Massimo Rontani, Cnr Nano (IT); Thomas Satzoukidis, Scuola Normale Superiore (IT); Masha Vladimirova, CNRS (FR), Sep 2015, Pise, Italy
Communication dans un congrès hal-01305122 v1

“Naturally” indirect excitons in wide band-gap semiconductor quantum wells.

Pierre Lefebvre
INDEX International School on the Physics of Indirect Excitons , Guillaume Malpuech; Masha Vladimirova, Mar 2015, Les Houches, France
Communication dans un congrès hal-01305086 v1

Transport of Indirect Excitons in Polar GaN/AlGaN Quantum Wells.

Fedor Fedichkin , Benoit Jouault , Peristera Andreakou , Pierre Valvin , Maria Vladimirova et al.
15th conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN15), Bernard Gil, Jun 2014, Montpellier, France
Communication dans un congrès hal-01305383 v1

Transient photoluminescence of aluminum-rich (Al, Ga) N low-dimensional structures

Pierre Lefebvre , Christelle Brimont , Pierre Valvin , Bernard Gil , H. Miyake et al.
International Conference on Nitride Semiconductors – ICNS10., Jaime A. Freitas Jr, Aug 2013, Washington DC, United States. pp.765, ⟨10.1002/pssa.201300505⟩
Communication dans un congrès istex hal-01021458 v1

Impact of surface and internal electrical fields on the properties of donor atoms in GaN nanowires.

Pierre Corfdir , Oliver Brandt , Pierre Lefebvre
International Workshop on Nitride Semiconductors – IWN 2014., Tadeusz Suski; Detlef Hommel, Aug 2014, Wroclaw, Poland
Communication dans un congrès hal-01305403 v1

Advances on MBE Selective Area Growth of III- Nitride nanostructures: from nanoLEDs to pseudo substrates.

S. Albert , A. Bengoechea-Encabo , F. Barbagini , D. López-Romero , M. A. Sanchez-García et al.
Workshop on Frontier Electronics - WOFE., Chairman: M.Shur - Rensselaer Polytechnic Institute,Troy, NY, USA, Dec 2013, San Juan, Puerto Rico. pp.1450020, ⟨10.1142/S0129156414500207⟩
Communication dans un congrès hal-01081163 v1

ZnCdO/ZnO multiple quantum well nanowires emitting in the visible.

Manuel Lopez-Ponce , Atsushi Nakamura , M. Suzuki , J. Temmyo , S. Agouram et al.
8th International Workshop on Zinc Oxide and Related Materials - IWZnO 2014., Sep 2014, Niagara Falls, Canada
Communication dans un congrès hal-01305424 v1

Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates

Pierre Corfdir , Amelie Dussaigne , Henryk Teisseyre , Tadeusz Suski , Izabella Grzegory et al.
International Workshop on Nitride semiconductors., Oct 2012, Sapporo, Japan. pp.08JC01, ⟨10.7567/JJAP.52.08JC01⟩
Communication dans un congrès hal-01179181 v1

Spatio-Temporal Dynamical Properties of Naturally Indirect Excitons in Polar Nitride Quantum Wells.

Pierre Lefebvre
European Materials Research Society (E-MRS) Srping Meeting. Symposium L: Group III Nitrides., European Materials Research Society (E-MRS), May 2013, Strasbourg, France
Communication dans un congrès hal-00796426 v1

Towards purely radiative recombination at room-temperature in nonpolar AlGaN/GaN quantum wells.

Pierre Corfdir , Amélie Dussaigne , Mehran Shahmohammadi , Henryk Teisseyre , Tadeusz Suski et al.
E-MRS Fall Meeting, Sep 2013, Varsovie, Poland
Communication dans un congrès hal-01907907 v1

Towards purely radiative recombination at room-temperature in nonpolar AlGaN/GaN quantum wells

Pierre Corfdir , Amélie Dussaigne , Mehran Shahmohammadi , Henryk Teisseyre , Tadeusz Suski et al.
E-MRS Fall Meeting, European Materials Society, Sep 2013, Varsovie, Poland
Communication dans un congrès hal-01306226 v1

Purely radiative exciton recombination in (Al,Ga)N/GaN quantum wells grown on the a-facet of GaN crystals.

Pierre Corfdir , Amélie Dussaigne , H. Teisseyre , Tadeusz Suski , Izabella Grzegory et al.
International Workshop on Nitride semiconductors (IWN 2012)., Oct 2012, Sapporo, Japan
Communication dans un congrès hal-00708711 v1

Impact of biexcitons on the formation of polariton condensates in III-nitride based multiple quantum well microcavities.

Pierre Corfdir , E. Giraud , J. Levrat , G. Rossbach , R. Butté et al.
International Workshop on Nitride semiconductors (IWN 2012)., Oct 2012, Sapporo, Japan
Communication dans un congrès hal-00708717 v1

Efficient phosphor-free, white light emission by using ordered arrays of GaN/InGaN nanocolumnar LEDs grown by Selective Area MBE.

Steven Albert , Ana Bengoechea-Encabo , M.A. Sanchez-Garcia , Francesca Barbagini , E. Calleja et al.
Workshop on Frontier Electronics - WOFE 7, Dec 2011, San Juan, Puerto Rico. pp.1250010, ⟨10.1142/S0129156412500103⟩
Communication dans un congrès hal-00656647 v1

Excitonic effects in GaN stacking faults and crystal phase quantum wells

Pierre Corfdir , Pierre Lefebvre
UK Semiconductors 2012, Jul 2012, Sheffield, United Kingdom
Communication dans un congrès hal-00708658 v1

Purely radiative recombinations and thermal carrier emission in nonpolar (Al,Ga)N/GaN quantum wells.

Pierre Corfdir , Amélie Dussaigne , H. Teisseyre , Tadeusz Suski , Izabella Grzegory et al.
International Conference on the Physics of Semiconductors, Jul 2012, Zürich, Switzerland
Communication dans un congrès hal-00708669 v1

Study of the effect of rapid thermal annealing in high Cd content Zn1-XCdXO nanowires grown by MOCVD.

Manuel Lopez-Ponce , A. Hierro , J.-M. Ulloa , Pierre Lefebvre , E. Muñoz et al.
International Workshop on ZnO and Related Materials., Sep 2012, Nice, France
Communication dans un congrès hal-00708700 v1

Analysis and control of emission properties of InGaN-on-GaN nanocolumns grown by molecular-beam epitaxy on Si(111) substrates.

Pierre Lefebvre
SPIE-Photonic West-OPTO. "Gallium Nitride Materials and Devices VII". (Conference 8262)., Jan 2012, San Francisco, United States
Communication dans un congrès hal-00708483 v1

E-beam nanopatterning for the ordered growth of GaN/InGaN nanorods.

Francesca Barbagini , Ana Bengoechea-Encabo , Steven Albert , Pierre Lefebvre , Javier Martinez et al.
37th International Conference on Micro and Nano Engineering (MNE 2011)., Sep 2011, Berlin, Germany. pp.374, ⟨10.1016/j.mee.2012.07.024⟩
Communication dans un congrès hal-00726087 v1

Picosecond Time-Resolved Cathodoluminescence to Probe Exciton Dynamics in a-Plane (Al,Ga)N/GaN Quantum Wells.

P. Corfdir , Pierre Lefebvre , Amélie Dussaigne , Laurent Balet , Samuel Sonderegger et al.
Microscopy and Microanalysis 2011, Aug 2011, Nashville, Tennessee., United States. pp.1868-1869, ⟨10.1017/S143192761101021X⟩
Communication dans un congrès hal-00796090 v1

Direct observation of biexciton localization dynamics in (Al,Ga)N/GaN multi quantum wells.

Pierre Corfdir , J. Levrat , R. Butté , E. Feltin , J.F. Carlin et al.
38th International Symposium on Compound Semiconductors - ISCS 2011., May 2011, Berlin, Germany
Communication dans un congrès hal-00797375 v1

Plasma-assisted MBE growth of III-N nanorods: applications to optoelectronic devices and photovoltaics.

E. Calleja , Ana Bengoechea-Encabo , Steven Albert , M.A. Sanchez-Garcia , Francesca Barbagini et al.
11th International Conference on Light-Matter Coupling in Nanostructures, PLMCN11, Apr 2011, Berlin, Germany
Communication dans un congrès hal-00632240 v1

Picosecond Time-Resolved Cathodoluminescence to Probe Exciton Dynamics in GaN and GaN based heterostructures

Pierre Corfdir , Pierre Lefebvre , Amélie Dussaigne , Laurent Balet , Samuel Sonderegger et al.
Cathodo-luminescence 2011. , Oct 2011, Gaithersburg, MD, United States
Communication dans un congrès hal-01306660 v1

Emission Control of InGaN Nanocolumns on Si(111) substrates Grown by MBE .

Steven Albert , Pierre Lefebvre , J. Grandal , M.A. Sanchez-Garcia , E. Calleja
9th International Conference on Nitride Semiconductors - ICNS9., Jul 2011, Glasgow, United Kingdom
Communication dans un congrès hal-00631744 v1

Control of the Morphology on Selective Area Growth of GaN Nanocolumns by Rf-Plasma-Assisted MBE.

Ana Bengoechea-Encabo , Steven Albert , Francesca Barbagini , Pierre Lefebvre , M.A. Sanchez-Garcia et al.
9th International Conference on Nitride Semiconductors - ICNS9., Jul 2011, Glasgow, United Kingdom
Communication dans un congrès hal-00631606 v1

Surface-related optical properties of GaN and InGaN nanocolumns.

Pierre Lefebvre
European Materials Research Society Spring Meeting., May 2011, Nice, France
Communication dans un congrès hal-00631334 v1

Selective area growth of GaN nanocolumns by rf-plasma assisted MBE at low temperature and under nitrogen-rich conditions.

Steven Albert , Ana Bengoechea-Encabo , Francesca Barbagini , Pierre Lefebvre , M.A. Sanchez-Garcia et al.
9th International Conference on Nitride Semiconductors - ICNS9., Jul 2011, Glasgow, United Kingdom
Communication dans un congrès hal-00631745 v1

Time-resolved cathodoluminescence on polychromatic light emitting (In,Ga)N quantum wells grown on (11-22) GaN facets.

Pierre Corfdir , Dobri Simeonov , E. Feltin , J.F. Carlin , Pierre Lefebvre et al.
(10th Int. Workshop on Beam Injection Assessment of Microstructures in Semicond - BIAMS 2010jul. 2010, Jul 2010, Halle, Germany. pp.1394, ⟨10.1002/pssc.201084005⟩
Communication dans un congrès hal-00631325 v1

MBE growth and characterization of InGaN-based films and nanocolumns on Silicon substrates and GaN templates.

Miguel A. Sanchez-Garcia , Steven Albert , Ana Bengoechea-Encabo , Pierre Lefebvre , E. Calleja et al.
2011 German-Japanese-Spanish Joint Workshop on Frontiers in Photonic and Electronic Materials and Devices, Elias Muñoz, Mar 2011, Grenade, Spain
Communication dans un congrès hal-01306674 v1

MBE growth and characterization of InGaN nanocolumns on Silicon substrates.

Steven Albert , Pierre Lefebvre , J. Grandal , M.A. Sanchez-Garcia , E. Calleja
European Materials Research Society Spring Meeting., May 2011, Nice, France
Communication dans un congrès hal-00632236 v1

Biexciton-Assisted Relaxation Mechanisms In III-Nitride Based Multi-Quantum Well Microcavities.

Pierre Corfdir , J. Levrat , G. Rossbach , R. Butté , E. Feltin et al.
9th International Conference on Nitride Semiconductors. ICNS9., Jul 2011, Glasgow, United Kingdom
Communication dans un congrès hal-00631761 v1

On the spontaneous and ordered growth of III-N nanocolumns: growth on nonpolar substrates and applications to Optoelectronic Devices.

E. Calleja , Ana Bengoechea-Encabo , J. Grandal , S. Fernandez-Garrido , M.A. Sanchez-Garcia et al.
39 th International School and Conference on the Physics of Semiconductors., Jun 2010, Jaszowiec, Poland
Communication dans un congrès hal-00634066 v1

Spontaneous and ordered growth of III-N nanocolumns: growth mechanisms and applications to Optoelectronic Devices.

E. Calleja , Ana Bengoechea-Encabo , J. Grandal , S. Fernandez-Garrido , J. Ristic et al.
International Workshop on Nitride Semiconductors - IWN 2010, Sep 2010, Tampa, Floride., United States
Communication dans un congrès hal-00633516 v1

Selective area growth of GaN nanocolumns by rf-plasma-assisted MBE.

Ana Bengoechea-Encabo , J. Grandal , S. Fernandez-Garrido , M.A. Sanchez-Garcia , Francesca Barbagini et al.
16th International Conference on Molecular Beam Epitaxy (MBE 2010), Aug 2010, Berlin, Germany
Communication dans un congrès hal-00633529 v1

Carrier localization and surface effects in InGaN nanocolumns grown by plasma-assisted molecular beam epitaxy.

Pierre Lefebvre , Steven Albert , J. Ristic , M.A. Sanchez-Garcia , E. Calleja
International Workshop on Nitride Semiconductors - IWN 2010, Sep 2010, Tampa, Floride., United States
Communication dans un congrès hal-00633510 v1

Internal efficiency of LEDs: An application of Quantum Mechanics.

Pierre Lefebvre
ForumLED - Europe 2010, Dec 2010, Lyon, France
Communication dans un congrès hal-00634063 v1

Exciton dynamics in a-plane (Al,Ga)N/GaN single quantum wells grown by molecular beam epitaxy on ELO-GaN.

Pierre Corfdir , Pierre Lefebvre , Amélie Dussaigne , Laurent Balet , Samuel Sonderegger et al.
International Workshop on Nitride Semiconductors - IWN 2010, Sep 2010, Tampa, Floride., United States
Communication dans un congrès hal-00633490 v1

Novel Picosecond Time-Resolved Cathodoluminescence to Probe Exciton Recombination Dynamics in GaN and GaN Based Heterostructures.

Samuel Sonderegger , P. Corfdir , Laurent Balet , T. Zhu , Amélie Dussaigne et al.
Microscopy and Microanalysis (M&M) 2010, Aug 2010, Portland, United States. pp.500, ⟨10.1017/S1431927610058162⟩
Communication dans un congrès hal-00741055 v1

Distortion of donor properties in III-nitride based nano-scale systems.

Pierre Corfdir , Pierre Lefebvre , Jean-Daniel Ganière , Benoit Deveaud-Plédran
International Workshop on Nitride Semiconductors - IWN 2010, Sep 2010, Tampa, Floride., United States
Communication dans un congrès hal-00633495 v1

Polarized emission from a single GaN/AlN quantum dot : Experiment and theory

Thierry Guillet , Richard Bardoux , Thierry Bretagnon , Bernard Gil , Pierre Lefebvre et al.
Journées Boîtes Quantiques, Jun 2009, Grenoble, France
Communication dans un congrès hal-00633306 v1

Picosecond time-resolved cathodoluminescence to study GaN based materials

Samuel Sonderegger , Pierre Corfdir , Laurent Balet , J. Ristic , Pierre Lefebvre et al.
2nd GCOE International Symposium on Photonics and Electronics Science and Engineering, Mar 2009, Kyoto, Japan
Communication dans un congrès hal-00797197 v1

Effect of the internal electric field on excitonic transitions in ZnO/(Zn,Mg)O quantum wells.

Thierry Bretagnon , Thierry Guillet , Pierre Lefebvre , Bernard Gil , Christian Morhain
9th Physics of Light-Matter Coupling and Nanostructures - PLMCN., Apr 2009, Lecce, Italy
Communication dans un congrès hal-00797192 v1

Low-temperature picosecond time-resolved cathodoluminescence study of localization in a-plane GaN.

Pierre Corfdir , Pierre Lefebvre , J. Ristic , Samuel Sonderegger , Laurent Balet et al.
Int. Conf. on Nitride Semiconductors - ICNS8., Oct 2009, Jeju, South Korea
Communication dans un congrès hal-00797195 v1

Time-resolved spectroscopy of excitonic transitions in ZnO/(Zn,Mg)O quantum wells grown by MBE

Pierre Lefebvre
14th European Molecular Beam Epitaxy Workshop (Euro-MBE), Mar 2008, Grenade, Spain
Communication dans un congrès hal-00389978 v1

Polarized emission from a single GaN/AlN quantum dot : Experiment and theory

Thierry Guillet , Richard Bardoux , B. Gil , T. Bretagnon , P. Lefebvre et al.
International Conference on LightMatter Coupling in Nanostructures (PLMCN8), Apr 2008, Tokyo, Japan
Communication dans un congrès hal-00389909 v1

Propriétés optiques de nanostructures à base de ZnO

Pierre Lefebvre
12èmes Journées Nano, Micro et Optoélectroniques, Jun 2008, Saint-Pierre d'Oléron, France
Communication dans un congrès hal-00389974 v1

Time-resolved photoluminescence of GaN nanocolumns grown by molecular beam epitaxy on Si.

P. Corfdir , J. Ristic , Pierre Lefebvre , E. Calleja , Jean-Daniel Ganière et al.
International Workshop on Nitride Semiconductors – IWN08, Oct 2008, Montreux, Switzerland
Communication dans un congrès hal-00390010 v1

Internal electric field in ZnO/Zn1-xMgxO in single quantum wells.

Thierry Bretagnon , Stéphane Faure , Thierry Guillet , Pierre Lefebvre , Bernard Gil et al.
Fifth International Workshop on Zinc Oxide and Related Materials., Sep 2008, Ypsilanti, Michigan., United States
Communication dans un congrès hal-00797187 v1

Emission polarisée d'une boîte quantique unique GaN/AlN : expérience et théorie

Thierry Guillet , Richard Bardoux , B. Gil , P. Lefebvre , T. Bretagnon et al.
11ème Journées de la Matière Condensée, Aug 2008, Strasbourg, France
Communication dans un congrès hal-00389559 v1

Polarized emission from a single GaN/AlN quantum dot : Experiment and theory

P. Lefebvre , Thierry Guillet , Richard Bardoux , B. Gil , T. Bretagnon et al.
International Workshop on Nitride Semiconductors (IWN2008), Oct 2008, Montreux, Switzerland
Communication dans un congrès hal-00389910 v1

Etude du couplage fort exciton-photon dans les microcavités massives ZnO par photoluminescence

Stéphane Faure , Thierry Guillet , T. Bretagnon , P. Lefebvre , B. Gil
11ème Journées de la Matière Condensée (JMC11), Aug 2008, Strasbourg, France
Communication dans un congrès hal-00389906 v1

Emission properties of basal stacking faults in a-plane gallium nitride

P. Corfdir , Pierre Lefebvre , J. Levrat , Amélie Dussaigne , J. Ristic et al.
9th International Workshop on Beam Injection Assessment of Microstructures in Semiconductors. BIAMS 2008, Jun 2008, Tolède, Spain
Communication dans un congrès hal-00390009 v1

Which quasi-particles in wide band gap bulk microcavities ?

Stéphane Faure , Thierry Guillet , P. Lefebvre , T. Bretagnon , T. Taliercio et al.
8th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN8), Apr 2008, Tokyo, Japan
Communication dans un congrès hal-00388717 v1

Micro-Photoluminescence of isolated GaN/AlN hexagonal QDs: Role of the trapping dynamics of charges at AlN defects

Richard Bardoux , Pierre Lefebvre , Thierry Guillet , Thierry Bretagnon , Thierry Taliercio et al.
14th European Molecular Beam Epitaxy Workshop (14th Euro-MBE), Mar 2007, Grenade, Spain
Communication dans un congrès hal-01306794 v1

Unusual dynamics of time-resolved emission from wide-band gap quantum dots.

Pierre Lefebvre
Workshop on Advances in Physics and Applications of Low-Dimensional Systems, Jul 2007, Brazilia, Brazil
Communication dans un congrès hal-00389998 v1

Radiative lifetime in wurtzite GaN/AlN quantum dots.

Richard Bardoux , T. Bretagnon , Thierry Guillet , P. Lefebvre , T. Taliercio et al.
International Symposium on Blue Laser and Light Emitting Diodes (ISBLED06), May 2006, Montpellier, France. pp.183, ⟨10.1002/pssc.200673559⟩
Communication dans un congrès hal-00389911 v1

Synthes de nanofils de ZnO dans des matériaux poreux ordonnés: experience et simulation moléculaire

Jean-Claude Tedenac , Aude. Mezy , T. Bretagnon , Benoit Coasne , Corine Gerardin et al.
Matériaux 2006, Nov 2007, Dijon, France
Communication dans un congrès hal-00339577 v1

Linear polarization of the emission of a single polar GaN/AlN quantum dot

Richard Bardoux , Pierre Lefebvre , Thierry Guillet , Thierry Bretagnon , Thierry Taliercio et al.
7th International Conference of Nitride Semiconductors (ICNS-7) , Sep 2007, Las Vegas, United States
Communication dans un congrès hal-01306799 v1

Time-resolved spectroscopy of excitonic transitions in ZnO/(Zn, Mg)O quantum wells

Thierry Guillet , Thierry Bretagnon , Thierry Taliercio , Pierre Lefebvre , Bernard Gil et al.
6th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN 2006), J. Christen, Sep 2006, Magdeburg, Germany. pp.352, ⟨10.1016/j.spmi.2007.03.030⟩
Communication dans un congrès istex hal-01308666 v1

Morphology control of ZnO nanomaterials using double hydrophilis block polymers

Jean-Claude Tedenac , Aude. Mezy , Corine Gerardin , Didier Null Tichit , S. Suwanboon et al.
2007 MRS fall meeting, Nov 2007, Boston, United States. pp.1
Communication dans un congrès hal-00279166 v1

Time-resolved spectroscopy of excitonic transitions in ZnO/(Zn,Mg)O quantum wells grown by MBE.

Pierre Lefebvre
14th Euro-MBE Workshop., Mar 2007, Grenade, Spain
Communication dans un congrès hal-01306409 v1

k.P energy band structure of ZnO/Zn1-xMgxO quantum well heterostructures

K. Zitouni , A. Kadri , Pierre Lefebvre , Bernard Gil
E-MRS Spring Meeting, May 2005, Strasbourg, France. pp.91, ⟨10.1016/j.spmi.2005.08.033⟩
Communication dans un congrès istex hal-00389991 v1

Optical properties of ZnO nanorods and nanowires

Aude Mezy , Stéphanie Anceau , T. Bretagnon , Pierre Lefebvre , T. Taliercio et al.
E-MRS Spring Meeting, May 2005, Strasbourg, France. pp.358, ⟨10.1016/j.spmi.2005.08.079⟩
Communication dans un congrès istex hal-00389990 v1

Polar and non-polar ZnO/ZnMgO quantum well heterostructures

Christian Morhain , Jean-Michel Chauveau , M. Teisseire , B. Lo , M. Laügt et al.
International Symposium on Blue Lasers and Light Emitting Diodes – ISBLLED06., May 2006, Montpellier, France
Communication dans un congrès hal-01309700 v1

Optical properties of quantum nanostructures based on wide band-gap semiconductor compounds.

Pierre Lefebvre
6th French-Japanese Workshop on Nanomaterials. , Mar 2006, Sapporo, Japan
Communication dans un congrès hal-01309482 v1

Contrôle de la croissance de nanomatériaux d'oxyde de zinc par des copolymères diblocs hydrophiles.

Aude Mezy , S. Suwanboon , Didier Ravot , Jean-Claude Tedenac , Corine Gérardin et al.
Matériaux 2006, Fédération Française des Matériaux, Nov 2006, Dijon, France
Communication dans un congrès hal-01309706 v1

Study of Sharp Photoluminescence Spectra of Individual GaN/AlN Quantum Dots. Spectral Diffusion Effects.

Richard Bardoux , Thierry Guillet , P. Lefebvre , T. Taliercio , T. Bretagnon et al.
International Workshop on Nitrides Semiconductors (IWN), Oct 2006, Kyoto, Japan
Communication dans un congrès hal-00389908 v1

Synthèse de nanofils de ZnO dans des Matériaux Poreux Ordonnés: Experience et Simulation Moléculaire.

Aude Mezy , Jean-Claude Tedenac , Benoit Coasne , S. Suwanboon , Didier Ravot et al.
Matériaux 2006, Fédération Française des Matériaux, Nov 2006, Dijon, France
Communication dans un congrès hal-01309705 v1

Carrier recombination dynamics and internal electric fields in GaN/AlN self-organized quantum dots.

Pierre Lefebvre , Thierry Bretagnon , Thierry Taliercio , Thierry Guillet , Bernard Gil et al.
6th International Conference on Nitride Semiconductors (ICNS6). , Aug 2006, Brème, Germany
Communication dans un congrès hal-01309937 v1

Time resolved photoluminescence study of ZnO/(Zn,Mg)O quantum wells

Thierry Bretagnon , Pierre Valvin , Pierre Lefebvre , Bernard Gil , Christian Morhain et al.
International Conference on Materials for Advanced Technologies (ICMAT 2005) Symposium N — ZnO and Related Materials, Jul 2005, Singapour, Singapore. pp.12-15, ⟨10.1016/j.jcrysgro.2005.10.034⟩
Communication dans un congrès istex hal-01309928 v1

Morphology Control of ZnO Nanomaterials using Double Hydrophilic Block Copolymers

Aude Mezy , Didier Ravot , Corine Gerardin , Didier Null Tichit , Jean-Claude Tedenac et al.
MRS Fall Meeting, Dec 2005, Boston, United States. pp.Rb15-05.1
Communication dans un congrès hal-00389989 v1

Continuous wave and time resolved spectroscopy of InAsN/GaAsN based quantum dots

Thierry Taliercio , Pierre Valvin , Romuald Intartaglia , Vincent Sallet , J.C. Harmand et al.
5th International Conference on Light–Matter Coupling in Nanostructures (PLMCN5). , Jun 2005, Glasgow, United Kingdom. pp.2598-2603, ⟨10.1002/pssa.200562030⟩
Communication dans un congrès istex hal-01309747 v1

Enhancement of localization and confinement effects in quaternary group-III nitride multi-quantum wells on SiC substrate

Stéphanie Anceau , Pierre Lefebvre , Tadeusz Suski , Leszek Konczewicz , H Hirayama et al.
EXMATEC'04 - 7th Int. Conf. on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies., Jun 2004, Montpellier, France. pp.642, ⟨10.1002/pssa.200460455⟩
Communication dans un congrès istex hal-01310242 v1

Time resolved photoluminescence of ZnO / (Zn,Mg)O quantum wells. Internal electric field effects.

Thierry Bretagnon , Pierre Valvin , Pierre Lefebvre , Bernard Gil , Christian Morhain
E-MRS Spring Meeting - Symposium G : ZnO and Related Materials., May 2005, Strasbourg, France
Communication dans un congrès hal-01309933 v1

Longitudinal-optical phonon broadening due to nitrogen atom incorporation in InGaAsN/GaAs quantum wells

Romuald Intartaglia , Thierry Taliercio , Pierre Valvin , Guilhem Almuneau , Pierre Lefebvre et al.
5th International Conference on Light–Matter Coupling in Nanostructures (PLMCN5)., Jun 2005, Glasgow, United Kingdom. pp.3887, ⟨10.1002/pssc.200562039⟩
Communication dans un congrès istex hal-01309930 v1

Surprisingly low built-in electric fields in quaternary InAlGaN heterostructures.

Stéphanie Anceau , Pierre Lefebvre , Tadeusz Suski , S. Lepkowsky , Henryk Teisseyre et al.
1st E-MRS Fall Meeting ., European Materials Research Society, Sep 2003, Varsovie, Poland. pp.190-194, ⟨10.1002/pssa.200303980⟩
Communication dans un congrès istex hal-01312293 v1

Nontrivial carrier recombination dynamics and optical properties of over-excited GaN/AlN quantum dots

S. Kalliakos , Thierry Bretagnon , Pierre Lefebvre , Sandrine Juillaguet , T. Taliercio et al.
5th International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2004), Mar 2004, Gyeongju, South Korea. pp.2779-2782, ⟨10.1002/pssb.200404996⟩
Communication dans un congrès istex hal-00543738 v1

Carrier Recombination Dynamics of Over-Excited Hexagonal GaN/AlN Quantum Dots.

Pierre Lefebvre , Sokratis Kalliakos , Thierry Bretagnon , Thierry Taliercio , Bernard Gil et al.
E-MRS Spring Meeting - Symposium L., European Materials Research Society, May 2004, Strasbourg, France
Communication dans un congrès hal-01310227 v1

Carrier recombination processes in GaAsN: from the dilute limit to alloying

Romuald Intartaglia , Thierry Taliercio , Pierre Lefebvre , Thierry Bretagnon , Thierry Guillet et al.
E-MRS Spring Meeting, European Materials Society, May 2004, Strasbourg, France. pp.365, ⟨10.1049/ip-opt:20040867⟩
Communication dans un congrès hal-01310044 v1

Micro-photoluminescence of GaN quantum dots embedded in 100 nm wide cylindrical AlN pillars

Thierry Taliercio , Sébastien Rousset , Pierre Lefebvre , Thierry Bretagnon , Thierry Guillet et al.
European Materials Research Society 2004, Symposium L. InN, GaN, AlN and Related Materials, their Heterostructures and Devices., European Materials Research Society, May 2004, Strasbourg, France. pp.783-790, ⟨10.1016/j.spmi.2004.09.034⟩
Communication dans un congrès istex hal-01312254 v1

Evidence de l'interaction dipôle-dipôle dans la photoluminescence résolue en temps des boîtes quantiques GaN/AlN.

Laurent Chusseau , Pierre Lefebvre , Thierry Bretagnon , Bernard Gil
Journées Nationales Micro- et Opto-électronique – Xèmes JNMO., Jun 2004, La Grande Motte, France
Communication dans un congrès hal-01312278 v1

Photo-induced interband absorption in group-III nitride quantum wells

Sokratis Kalliakos , Pierre Lefebvre , Thierry Taliercio
International Conference on Superlattices, Nano-structures and Nano-devices - ICSNN 2002., Jul 2002, Toulouse, France. pp.247-249, ⟨10.1016/S1386-9477(02)00785-3⟩
Communication dans un congrès istex hal-01322938 v1

Optical properties of GaN/AlN quantum boxes under high photo-excitation

S. Kalliakos , Thierry Bretagnon , Pierre Lefebvre , Sandrine Juillaguet , T. Taliercio et al.
5th International Conference on Nitride Semiconductors (ICNS-5), Axel Hoffmann, May 2003, Nara, Japan. pp.2666-2669, ⟨10.1002/pssc.200303270⟩
Communication dans un congrès hal-00543736 v1

Coexistence in photoluminescence of free exciton and bound exciton in low nitrogen content GaInNAs layers

Romuald Intartaglia , Thierry Taliercio , Bernard Gil , Pierre Lefebvre , Pierre Valvin et al.
5th International Conference on Nitride Semiconductors - ICNS 5., May 2003, Nara, Japan. pp.2631, ⟨10.1002/pssc.200303271⟩
Communication dans un congrès istex hal-01312489 v1

New model of electron-hole pair recombination in (Ga,In)N/GaN low-dimensional systems

Pierre Lefebvre , Aurélien Morel , Thierry Taliercio , Sokratis Kalliakos , Bernard Gil
5th International Conference on Nitride Semiconductors - ICNS 5., May 2003, Nara, Japan
Communication dans un congrès hal-01312484 v1

Two-dimensional “pseudo-donor–acceptor-pairs” model of recombination dynamics in InGaN/GaN quantum wells

Aurélien Morel , Pierre Lefebvre , Thierry Taliercio , Bernard Gil , Nicolas Grandjean et al.
International Conference on Superlattices, Nano-structures and Nano-devices - ICSNN 2002., Jul 2002, Toulouse, France. pp.64-67, ⟨10.1016/S1386-9477(02)00762-2⟩
Communication dans un congrès istex hal-01319596 v1

Original physical properties of low-dimensional systems based on group-III nitride semiconductors.

Pierre Lefebvre
1st E-MRS Fall Meeting ., European Materials Research Society, Sep 2003, Varsovie, Poland
Communication dans un congrès hal-01312286 v1

Light-Hole and Heavy-Hole Excitons: the Right Probe for the Physics of Low N Content GaAsN

Thierry Taliercio , Bernard Gil , Pierre Lefebvre , Marie-Amandine Pinault , Eric Tournié
International Workshop on Nitride Semiconductors (IWN 2002), Jul 2002, Aix-la-Chapelle, Germany. pp.778-781, ⟨10.1002/1521-3951(200212)234:3<778::AID-PSSB778>3.0.CO;2-H⟩
Communication dans un congrès istex hal-01319577 v1

Small Built-in Electric Fields in Quaternary InAlGaN Heterostructures

Henryk Teisseyre , Tadeusz Suski , S. Lepkowsky , Stéphanie Anceau , Piotr Perlin et al.
International Workshop on Nitride Semiconductors (IWN 2002), Jul 2002, Aix-la-Chapelle, Germany. pp.764-768, ⟨10.1002/1521-3951(200212)234:3<764::AID-PSSB764>3.0.CO;2-0⟩
Communication dans un congrès istex hal-01319469 v1

Optical properties of group-III nitride based quantum wells and quantum boxes.

Pierre Lefebvre
12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. , Jun 2002, Smolenice, Slovakia. pp.227 - 232 ⟨10.1109/SIM.2002.1242761⟩
Communication dans un congrès hal-01316057 v1

Microcalorimetric absorption spectroscopy in GaN–AlGaN quantum wells

Axel Göldner , Axel Hoffmann , Bernard Gil , Pierre Lefebvre , Pierre Bigenwald et al.
European-MRS Spring Meeting - Symposium L : Nitrides and Related Wide Band Gap Materials, Jun 1998, Strasbourg, France. pp.319 - 322, ⟨10.1016/S0921-5107(98)00363-8⟩
Communication dans un congrès istex hal-01756610 v1

Highly Photo-Excited Nitride Quantum Wells: Threshold for Exciton Bleaching

Philippe Christol , P. Bigenwald , A. Kavokin , B. Gil , P. Lefebvre
3rd International Conference on Nitride Semiconductors, Bernard GIL; Pierre LEFEBVRE, Jul 1999, Montpellier (FR), France. pp.481 - 486, ⟨10.1002/(SICI)1521-3951(199911)216:1<481::AID-PSSB481>3.0.CO;2-K⟩
Communication dans un congrès istex hal-01756604 v1

Optical properties of InGaN/GaN multiple quantum wells

J. Allegre , Pierre Lefebvre , Sandrine Juillaguet , Jean Camassel , Wojciech Knap et al.
7th International Conference on Silicon Carbide, III-Nitrides and Related Materials (ICSCIII-N 97), Aug 1997, STOCKHOLM (SWEDEN), France. pp.1295-1298
Communication dans un congrès hal-00543785 v1

Croissance de multi-puits quantiques dans le système (Al)GaInAs sur AlGaAsSb accordé sur InP

Guilhem Almuneau , F. Genty , Laurent Chusseau , C. Picard , T. Taliercio et al.
Séminaire National : Epitaxie par Jets Moléculaires, 1997, Saint-Aygulf, France
Communication dans un congrès hal-01904251 v1

Universal formulation of excitonic linear absorption spectra in all semiconductor microstructures

Pierre Lefebvre , Philippe Christol , Henry Mathieu
7th International Conference on Superlattices Microstructures and Microdevices, Aug 1994, Banff, AB Canada, Canada. pp.19 - 21, ⟨10.1006/spmi.1995.1005⟩
Communication dans un congrès istex hal-01756638 v1

Universal formulation of excitonic linear absorption spectra in all semiconductor microstructures

Philippe Christol , Pierre Lefebvre , Henry Mathieu
7th International Conference on Superlattices Microstructures and Microdevices, Aug 1994, Banff, AB Canada, Canada. pp.19 - 21, ⟨10.1006/spmi.1995.1005⟩
Communication dans un congrès istex hal-01756184 v1

General formalism for excitonic absorption edges in confined systems with arbitrary dimensionality

P. Lefebvre , Philippe Christol , H. Mathieu
3rd International Conference on Optics of Excitons in Confined Systems, Aug 1993, Montpellier, France. pp.377 - 380, ⟨10.1051/jp4:1993579⟩
Communication dans un congrès hal-01756636 v1

Low dimensionality semiconductors: modelling of excitons via a fractional-dimensional space

Philippe Christol , P. Lefebvre , H. Mathieu
4èmes Journées de Microélectronique et Optoélectronique III-V, Oct 1992, La Grande Motte, France. pp.1783 - 1789, ⟨10.1051/jp3:1993237⟩
Communication dans un congrès hal-01756634 v1

Hetero- and multi-quantum well structures in wide-gap II-VI semiconductors

M. Averous , B Bertho , B Boiron , B Boring , Thierry Cloitre et al.
E-MRS Advanced Research Workshop, Jan 1991, Montpellier, France. pp.A1 - A7, ⟨10.1088/0268-1242/6/9A/001⟩
Communication dans un congrès istex hal-01817883 v1
Image document

FINE STRUCTURE OF EXCITONS IN QUANTUM WELLS

B. Gil , Y. Chen , P. Lefebvre , H. Mathieu
Modulated Semiconductor Structures III, Jul 1987, Montpellier (France), France. pp.C5-549-C5-552, ⟨10.1051/jphyscol:19875118⟩
Communication dans un congrès istex jpa-00226701 v1

Tuning GaN/AlGaN quantum well emission by deposition of Few-Layer Graphene and Nickel/Gold films

Christelle Brimont , Rémi Aristegui , Pierre Lefebvre , Thierry Guillet , Maria Vladimirova et al.
ICNS -14th International Conference on Nitride Semiconductors, Nov 2023, Fukuoka, Japan.
Poster de conférence hal-04793643 v1

Probing the Mott transition of indirect excitons in GaN/(AlGa)N heterostructures

François Chiaruttini , Christelle Brimont , Denis Scalbert , Steeve Cronenberger , Pierre Lefebvre et al.
International Workshop on Nitride Semiconductors (IWN 2022), Oct 2022, Berlin, Germany
Poster de conférence hal-04874207 v1

On the nature of light emission in polar GaN/(AlGa)N quantum wells.

Christelle Brimont , Thierry Guillet , Denis Scalbert , Benoit Jouault , Pierre Valvin et al.
12th International Conference on Nitride Semiconductors – ICNS12., Jul 2017, Strasbourg, France.
Poster de conférence hal-01907860 v1

Transport of Indirect Excitons in Polar GaN/AlGaN Quantum Wells.

Fedor Fedichkin , Peristera Andreakou , Pierre Valvin , Maria Vladimirova , Thierry Guillet et al.
Condensed Matter in Paris – CMD25 – JMC14. , Aug 2014, Paris, France.
Poster de conférence hal-01305395 v1
Image document

Transport of Indirect Excitons in Polar GaN/AlGaN Quantum Wells.

F Fedichkin , P Andreakou , P Valvin , M Vladimirova , T Guillet et al.
Compound Semiconductor Week 2014, May 2014, Montpellier, France.
Poster de conférence hal-01305161 v1

Dipolar exciton fluids in (Al,Ga)N/GaN quantum wells

Andreas Kruse , Pierre Valvin , Maria Vladimirova , Thierry Guillet , Thierry Bretagnon et al.
14th International Conference on the Physics of Light-Matter Coupling in Nanostructures - PLMCN14, May 2013, Hersonissos, Crète, Greece.
Poster de conférence hal-01306241 v1

Time-resolved Photoluminescence spectroscopy of Zn1-XCdXO nanowires.

Manuel Lopez-Ponce , Pierre Lefebvre , Christelle Brimont , Pierre Valvin , J.-M. Ulloa et al.
International Workshop on ZnO and Related Materials., Sep 2012, Nice, France
Poster de conférence hal-00708706 v1

Role of the dielectric mismatch on the emission properties of GaN nanostructures.

Pierre Corfdir , Pierre Lefebvre
International Workshop on Nitride semiconductors (IWN 2012)., Oct 2012, Sapporo, Japan
Poster de conférence hal-00708726 v1

Optical properties of a hybrid nitride-ZnO microcavity.

Pierre Lefebvre , Christelle Brimont , Thierry Guillet , Thierry Bretagnon , Bernard Gil et al.
SPIE-OPTO-Photonic West. "Gallium Nitride Materials & Devices VII"., Jan 2012, San Francisco, United States
Poster de conférence hal-00708677 v1

Time-resolved photoluminescence of high-aluminum-content (Al,Ga)N quantum wells and epilayers emitting in the 215-255 nm range.

Pierre Lefebvre , Christelle Brimont , Pierre Valvin , H. Miyake , K. Hiramatsu et al.
International Workshop on Nitride semiconductors (IWN 2012)., Oct 2012, Sapporo, Japan
Poster de conférence hal-00797472 v1

Excitonic effects in GaN stacking faults and crystal phase quantum wells

Pierre Corfdir , Pierre Lefebvre
International Conference on the Physics of Semiconductors, Jul 2012, Zürich, Switzerland
Poster de conférence hal-00708666 v1

Dynamics of cavity biexcitons in III-Nitride based multi quantum well Microcavities

Pierre Corfdir , J. Levrat , G. Rossbach , R. Butté , E. Feltin et al.
Optics of Excitons in Confined Systems (OECS 12)., Sep 2011, Paris, France
Poster de conférence hal-00631405 v1

Radiative Recombination Governed Lifetimes In Non-polar (Al,Ga)N/GaN Quantum Wells Grown On Bulk GaN Crystals.

Pierre Corfdir , Amélie Dussaigne , H. Teisseyre , Izabella Grzegory , Tadeusz Suski et al.
9th International Conference on Nitride Semiconductors. ICNS9., Jul 2011, Glasgow, United Kingdom
Poster de conférence hal-00631755 v1

Radiative recombination limited lifetimes in non-polar (Al,Ga)N/GaN quantum wells grown on bulk GaN crystals.

Pierre Corfdir , Amélie Dussaigne , H. Teisseyre , Izabella Grzegory , Tadeusz Suski et al.
38th International Symposium on Compound Semiconductors - ISCS38., May 2011, Berlin, Germany
Poster de conférence hal-00632230 v1

Growth and Characterization of InGaN/GaN Quantum Dots for violet-blue Applications

Zarko Gacevic , Pierre Lefebvre , Frank Bertram , G. Schmidt , P. Veit et al.
9th International Conference on Nitride Semiconductors - ICNS9., Jul 2011, Glasgow, United Kingdom
Poster de conférence hal-00632224 v1

Radiative lifetimes of localized and free excitons in homoepitaxial non-polar (Al,Ga)N/GaN single quantum well.

Pierre Corfdir , Amélie Dussaigne , Pierre Lefebvre , H. Teisseyre , Jean-Daniel Ganière et al.
39 th International School and Conference on the Physics of Semiconductors., Jun 2010, Jaszowiec, Poland
Poster de conférence hal-00634159 v1

Radiative Recombination Limited Lifetimes in a-plane (Al,Ga)N/GaN single quantum wells grown on GaN.

Pierre Corfdir , Amélie Dussaigne , Pierre Lefebvre , H. Teisseyre , Tadeusz Suski et al.
International Workshop on Nitride Semiconductors - IWN 2010, Sep 2010, Tampa, Floride., United States
Poster de conférence hal-00633505 v1

Exciton relaxation and recombination mechanisms in a-plane GaN probed by time-resolved cathodoluminescence.

Pierre Corfdir , Pierre Lefebvre , Amélie Dussaigne , J. Ristic , T. Zhu et al.
10th International Workshop on Beam Injection Assessment of Microstructures in Semiconductors - BIAMS 2010, Jul 2010, Halle (Saale), Germany
Poster de conférence hal-00634162 v1

MBE growth and characterization of InN/InGaN thin films and nanostructures on GaN templates and Si(111) substrates.

Steven Albert , J. Grandal , M.A. Sanchez-Garcia , Pierre Lefebvre , J. Ristic et al.
16th International Conference on Molecular Beam Epitaxy (MBE 2010), Aug 2010, Berlin, Germany
Poster de conférence hal-00633522 v1

GaN nanocolumns grown on Si(111) by plasma-assisted MBE: Correlation of structural and optical properties with growth parameters.

S. Fernandez-Garrido , J. Grandal , Pierre Lefebvre , M.A. Sanchez-Garcia , E. Calleja
3rd International Symposium on Growth of III-Nitrides - ISGN3., Jul 2010, Montpellier, France
Poster de conférence hal-00633536 v1

Exciton localization on basal stacking faults in a-plane GaN probed by picosecond time-resolved cathodoluminescence.

Pierre Corfdir , Pierre Lefebvre , J. Ristic , Amélie Dussaigne , Samuel Sonderegger et al.
Int. Conf. On Optics of Excitons in Confined Systems - OECS11., Sep 2009, Madrid, Spain
Poster de conférence hal-00797193 v1

Strong coupling of multiple branches polariton in a ZnO microcavity.

Stéphane Faure , Thierry Guillet , Christelle Brimont , Thierry Bretagnon , Pierre Lefebvre et al.
Int. Conf. On Optics of Excitons in Confined Systems - OECS11., Sep 2009, Madrid, Spain
Poster de conférence hal-00797194 v1

Optical properties of V-pits in GaN through temperature-dependent picosecond Time-Resolved Cathodolminescence (pTRCL)

Samuel Sonderegger , Pierre Corfdir , Laurent Balet , Pierre Lefebvre , Denis Martin et al.
Int. Conf. on Nitride Semiconductors - ICNS8., Oct 2009, Jeju, South Korea
Poster de conférence hal-00797196 v1

Spectroscopy of GaN nanocolumns grown by molecular beam epitaxy on Si.

Pierre Corfdir , Jean-Daniel Ganière , J. Ristic , Pierre Lefebvre , B. Deveaud et al.
Meeting annuel de la Société Suisse de Physique., Mar 2008, Genève, Switzerland
Poster de conférence hal-00797191 v1

Which quasi-particle in wide band gap bulk microcavities?

Stéphane Faure , Thierry Guillet , Pierre Lefebvre , Thierry Bretagnon , Thierry Taliercio et al.
2nd International School on Nanophotonics , Sep 2007, Maratea, Italy.
Poster de conférence hal-01306849 v1

Determination of internal electric field in ZnO/(Zn,Mg)O quantum wells from time resolved photoluminescence experiments

Thierry Bretagnon , Thierry Guillet , Pierre Lefebvre , Thierry Taliercio , Bernard Gil et al.
28th International Conference on the Physics of Semiconductors - ICPS 28. , Jul 2006, Vienne, Austria.
Poster de conférence hal-01309701 v1

ZnO / (Zn,Mg)O Quantum Wells : a Time Resolved Photoluminescence Study

Thierry Bretagnon , Pierre Lefebvre , Bernard Gil , Christian Morhain
International Symposium on Blue Lasers and Light Emitting Diodes – ISBLLED06., May 2006, Montpellier, France
Poster de conférence hal-01309698 v1

Excitons in GaN/AlGaN homoepitaxial quantum wells grown along the nonpolar (02-11) direction on bulk GaN substrates.

Henryk Teisseyre , C. Skierbiszewski , Boleslaw Łucznik , Kamler G. , Feduniewicz A. et al.
6th International Conference on Nitride Semiconductors (ICNS6). , Aug 2006, Brème, Germany.
Poster de conférence hal-01309939 v1

Localization effects in InGaN/GaN wide quantum well structures grown on bulk GaN crystals.

Robert Czernecki , Piotr Perlin , G. Franssen , T. Swietlik , J. Borysiuk et al.
6th International Conference on Nitride Semiconductors (ICNS6). , Aug 2006, Brème, Germany.
Poster de conférence hal-01309942 v1

Micro-photoluminescence of isolated hexagonal GaN/AlN quantum dots : role of the electron-hole dipole

Richard Bardoux , Thierry Guillet , Pierre Lefebvre , Thierry Taliercio , Thierry Bretagnon et al.
Wolfgang Jantsch; Friederich Schafler. 28th International Conference on the Physics of Semiconductors - ICPS 28. , Jul 2006, Vienne, Austria. AIP Publishing, AIP Conference Proceedings, 893, pp.941, 2007, PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors - ICPS 2006. ⟨10.1063/1.2730203⟩
Poster de conférence hal-01309696 v1

Malices et fourberies des boîtes quantiques GaN/AlN.

Pierre Lefebvre , Thierry Bretagnon , Thierry Taliercio , Thierry Guillet , Bernard Gil et al.
Journées Nationales Micro- et Opto-électronique – Xèmes JNMO., Jun 2004, La Grande Motte, France.
Poster de conférence hal-01312258 v1

Dynamique de recombinaison des porteurs dans des puits quantiques GaInAsN/GaAs.

Romuald Intartaglia , Thierry Taliercio , Pierre Valvin , Thierry Guillet , Thierry Bretagnon et al.
9èmes Journées de la Matière Condensée, Aug 2004, Nancy, France
Poster de conférence hal-01312282 v1

Amélioration de l’efficacité radiative dans les puits quantiques à base d’(Al,Ga,In)N pour les composants optoélectroniques

Stéphanie Anceau , Pierre Lefebvre , Tadeusz Suski , Leszek Konczewicz , H Hirayama et al.
Journées du GDR "Semiconducteurs à Grands Gaps"., May 2004, Fréjus, France
Poster de conférence hal-01312280 v1

Continuous-wave versus time-resolved photo-luminescence of GaN/AlN quantum dots.

Pierre Lefebvre , Thierry Bretagnon , Thierry Taliercio , Thierry Guillet , Bernard Gil et al.
Summer School "Semiconductor Quantum Dots: Physics and Devices"., Sep 2004, Ascona, Switzerland
Poster de conférence hal-01312253 v1

Carrier recombination dynamics in GaN/AlN quantum dots.

Thierry Bretagnon , Pierre Lefebvre , Pierre Valvin , Thierry Taliercio , Thierry Guillet et al.
EXMATEC'04 - 7th Int. Conf. on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies., Jun 2004, Montpellier, France
Poster de conférence hal-01310832 v1

Small internal electric fields in quaternary InGaAlN heterostructures

Stéphanie Anceau , S. Lepkowsky , Henryk Teisseyre , Tadeusz Suski , Piotr Perlin et al.
Michael Shur; Arturas Zukauskas. NATO Advanced Research Workshop on UV Solid State Light Emitters and Detectors., Jun 2003, Vilnius, Lithuania. Kluwer Academic Publisher, Dordrecht, Pays-Bas.; lOS Press, Amsterdam, Pays-Bas.; NATO Scientific Affairs Division., 144, pp.215-222, UV Solid-State Light Emitters and Detectors. NATO Science Series II: Mathematics, Physics and Chemistry. ⟨10.1007/978-1-4020-2103-9⟩
Poster de conférence hal-01312494 v1

Nonlinear optical absorption induced by high photo-excitation of group-III nitride based quantum wells

Pierre Lefebvre , Sokratis Kalliakos , Thierry Taliercio
5th International Conference on Nitride Semiconductors - ICNS 5., May 2003, Nara, Japan.
Poster de conférence hal-01312666 v1

Internal electric fields in quaternary InAlGaN heterostructures

Henryk Teisseyre , Tadeusz Suski , S. Lepkowsky , Stéphanie Anceau , Piotr Perlin et al.
5th International Conference on Nitride Semiconductors - ICNS 5., May 2003, Nara, Japan.
Poster de conférence hal-01312665 v1

Evolution of internal electric fields with the wel thickness of quaternary InAlGaN quantum wells

Stéphanie Anceau , Henryk Teisseyre , Tadeusz Suski , S. Lepkowsky , Leszek Konczewicz et al.
Joint 19th AIRAPT - 41th EHPRG Int. Conf. on High Pressure Science and Technology , Jul 2003, Bordeaux, France
Poster de conférence hal-01312667 v1

Proceedings of the 7th International Conference on Optics and Excitons in Confined Systems (OECS7).

Gérald Bastard , Pierre Lefebvre
Pierre Lefebvre; Gérald Bastard. 7th International Conference on Optics and Excitons in Confined Systems (OECS7)., Sep 2001, Montpellier, France. 190 (2-3), WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, pp.303-603 (Part 1) et 605-870 (Part 2), 2002, Proceedings of the 7th International Conference on Optics and Excitons in Confined Systems (OECS7)., ⟨10.1002/1521-396X(200204)190:2<303::AID-PSSA303>3.0.CO;2-B⟩
Proceedings/Recueil des communications istex hal-01312678 v1

Proceedings Symposium H, "GaN & Related Compounds". E-MRS Spring Meeting.

Hiroshi Amano , E. Calleja , Jürgen Christen , Markus Kamp , Pierre Lefebvre et al.
Pierre Lefebvre; Enrique Calleja; Tadeusz Suski; Jürgen Christen; Hiroshi Amano; James Speck; Markus Kamp. E-MRS Spring Meeting. Symposium H, "GaN & Related Compounds". , Jun 2002, Strasbourg, France. 93 (1-3), Elsevier Science B.V., pp.1-245, 2002, ⟨10.1016/S0921-5107(02)00114-9⟩
Proceedings/Recueil des communications istex hal-01312713 v1