Pierre Lefebvre
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pierre-lefebvre
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0000-0001-8513-5489
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033942463
- ResearcherID : Q-7571-2019
Présentation
Directeur de Recherche au CNRS. Spécialiste des propriétés optiques des puits quantiques et autres nanostructures à base de semiconducteurs, notamment les nitrures d'éléments III et le ZnO. Expert en modélisation et en diverses spectroscopies (photoluminescence simple ou résolue en temps, réflectivité, absorption...) permettant l'étude des excitons dans ces systèmes. Google Scholar : https://scholar.google.fr/citations?user=YuoEELIAAAAJ&hl=fr .
Publications
Publications
Light-emitting diode chip. Phosphor-free-all-InGaN White Light LEDs using Nanocolumns.Germany, Patent n° : EP2506321. L2C:11-359. 2012 |
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Optical gas sensing device.Germany, Patent n° : EP2518475. 2012 |
Surface related optical properties of GaN-based nanowires.V. Consonni, G. Feuillet. Wide Band Gap Semiconductor Nanowires 1., John Wiley & Sons, Inc., Hoboken, NJ, USA., pp.59-79, 2014, Print: 978-1-84821-597-9. Online:9781118984321. ⟨10.1002/9781118984321.ch3⟩ |
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Physics and optical properties of GaN-AlGaN quantum wells.H. Jiang; O. Manasreh III-V Nitride Semiconductors : Optical Properties I, Taylor & Francis Books, pp.249, 2002, 1-56032-972-6 |
Physique des Semiconducteurs et des Composants Electroniques - Problèmes Résolus.Dunod, 2001, Collection Sciences Sup, 2-10-004662-4 |
Complexity of dipolar exciton Mott transition in GaN/(AlGa)N nanostructuresOptics of Excitons in Confined Systems, University of Dortmund, Aug 2021, Dortmund, Germany |
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Control Over Dipolar Exciton Fluids in GaN/(AlGa)N Nanostructures13th International Conference on Nitride Semiconductors (ICNS-13), Jul 2019, Bellevue, United States |
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Controlled and thermalized indirect exciton fluids in a GaN/AlGaN quantum well with electrostatic traps20th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN19), Jul 2019, Suzdal, Russia |
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Control over dipolar exciton fluids in GaN/(AlGa)N nanostructures5th INTERNATIONAL CONFERENCE ON QUANTUM TECHNOLOGIES, Jul 2019, Moscou, Russia |
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Electrostatic trapping of indirect excitons in GaN/AlGaN quantum wells.International Conference on the Physics of Semiconductors, Jul 2018, Montpellier, France |
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Trapping dynamics of indirect excitons into electrostatic traps in GaN quantum wells.TERAMETANANO-3: Terahertz Emission, Metamaterials and Nanophotonics., Alexey Kavokin - Jerome Tignon - Timothy C. H. Liew - Pavel Belov, Mar 2018, Uxmal, Mexico |
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Phase transition of indirect excitons in GaN quantum wells.International Workshop on Nitride semiconductors - IWN2018., Nov 2018, Kanazawa, Japan |
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Switching of exciton character in double InGaN/GaN quantum wells.International Workshop on Nitride semiconductors - IWN2018., Nov 2018, Kanazawa, Japan |
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Indirect Excitons in Group III-Nitride-Based Quantum Wells.CIMTEC 2018 - 14th Intl Conference on Modern Materials and Technologies - 8th Forum on New Materials, Shuji NAKAMURA; University of California; USA (Honorary Chair) Michele MUCCINI; CNR-ISMN; Italy (C, Jun 2018, Pérouse, Italy |
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On the nature of light emission in polar GaN/(AlGa)N quantum wellsInternational Conference on Hybrid Photonics and Materials, Sep 2017, Miconos, Greece |
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Homogeneous versus inhomogeneous broadening of the photoluminescence in polar GaN/(AlGa)N quantum wells.International Conference on Physics of Light-Matter Coupling in Nanostructures – PLMCN18., Sven Höfling, Alexei Kavokin, Jul 2017, Würtzburg, Germany |
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Indirect excitons in polar GaN/(AlGa)N quantum wellsInternational school/colloquium in honor of E. Gross, Oct 2017, St-Petersbourg, Russia |
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Indirect excitons in polar group III nitride quantum wells.8th International Conference on Materials Science and Condensed Matter Physics, Leonid Kulyuk, Sep 2016, Chisinau, Moldova |
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Transport of indirect excitons in GaN quantum wells.International Workshop on Nitride Semiconductors (IWN 2016), Alan Doolittle, Tomás Palacios, Stacia Keller, Siddharth Rajan, Oct 2016, Orlando, United States |
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Searching for Indirect Excitons in Coupled Double InGaN/GaN Quantum WellsInternational Workshop on Nitride Semiconductors (IWN 2016), Oct 2016, Orlando, United States |
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Picosecond dynamics of free and bound excitons in doped diamondHasselt Diamond Workshop 2016 - SBDD XXI, Miloš Nesládek, Mar 2016, Hasselt, Belgium. ⟨10.1103/PhysRevB.93.115202⟩ |
Indirect excitons in AlGaN/GaN polar quantum wells.17th International Conference on Physics of Light-Matter Coupling in Nanostructures – PLMCN17., Yasuhiko Arakawa, Mar 2016, Nara, Japan |
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Transport of Indirect Excitons in Polar GaN/AlGaN Quantum Well Structures Grown on Sapphire and GaN Substrates.Collective Electronic Excitations in 2D (CEE 2D 2015) - INDEX Conference, François Dubin, ICFO (ES); Vittorio Pellegrini, Scuola Normale Superiore & IIT (IT); Aron Pinczuk, Columbia University (USA); David Ritchie, University of Cambridge (UK); Massimo Rontani, Cnr Nano (IT); Thomas Satzoukidis, Scuola Normale Superiore (IT); Masha Vladimirova, CNRS (FR), Sep 2015, Pise, Italy |
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“Naturally” indirect excitons in wide band-gap semiconductor quantum wells.INDEX International School on the Physics of Indirect Excitons , Guillaume Malpuech; Masha Vladimirova, Mar 2015, Les Houches, France |
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Indirect excitons in wide band gap semiconductors.International School on Nanophotonics and Photovoltaics. INSP 2015., MISP : Mediterranean Institute of Fundamental Physics, Sep 2015, Cefalu, Italy |
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Impact of surface and internal electrical fields on the properties of donor atoms in GaN nanowires.International Workshop on Nitride Semiconductors – IWN 2014., Tadeusz Suski; Detlef Hommel, Aug 2014, Wroclaw, Poland |
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Transient photoluminescence of aluminum-rich (Al, Ga) N low-dimensional structuresInternational Conference on Nitride Semiconductors – ICNS10., Jaime A. Freitas Jr, Aug 2013, Washington DC, United States. pp.765, ⟨10.1002/pssa.201300505⟩ |
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Transport of Indirect Excitons in Polar GaN/AlGaN Quantum Wells.15th conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN15), Bernard Gil, Jun 2014, Montpellier, France |
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Advances on MBE Selective Area Growth of III- Nitride nanostructures: from nanoLEDs to pseudo substrates.Workshop on Frontier Electronics - WOFE., Chairman: M.Shur - Rensselaer Polytechnic Institute,Troy, NY, USA, Dec 2013, San Juan, Puerto Rico. pp.1450020, ⟨10.1142/S0129156414500207⟩ |
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ZnCdO/ZnO multiple quantum well nanowires emitting in the visible.8th International Workshop on Zinc Oxide and Related Materials - IWZnO 2014., Sep 2014, Niagara Falls, Canada |
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Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN SubstratesInternational Workshop on Nitride semiconductors., Oct 2012, Sapporo, Japan. pp.08JC01, ⟨10.7567/JJAP.52.08JC01⟩ |
Towards purely radiative recombination at room-temperature in nonpolar AlGaN/GaN quantum wells.E-MRS Fall Meeting, Sep 2013, Varsovie, Poland |
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Spatio-Temporal Dynamical Properties of Naturally Indirect Excitons in Polar Nitride Quantum Wells.European Materials Research Society (E-MRS) Srping Meeting. Symposium L: Group III Nitrides., European Materials Research Society (E-MRS), May 2013, Strasbourg, France |
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Towards purely radiative recombination at room-temperature in nonpolar AlGaN/GaN quantum wellsE-MRS Fall Meeting, European Materials Society, Sep 2013, Varsovie, Poland |
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Purely radiative recombinations and thermal carrier emission in nonpolar (Al,Ga)N/GaN quantum wells.International Conference on the Physics of Semiconductors, Jul 2012, Zürich, Switzerland |
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Excitonic effects in GaN stacking faults and crystal phase quantum wellsUK Semiconductors 2012, Jul 2012, Sheffield, United Kingdom |
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Impact of biexcitons on the formation of polariton condensates in III-nitride based multiple quantum well microcavities.International Workshop on Nitride semiconductors (IWN 2012)., Oct 2012, Sapporo, Japan |
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Efficient phosphor-free, white light emission by using ordered arrays of GaN/InGaN nanocolumnar LEDs grown by Selective Area MBE.Workshop on Frontier Electronics - WOFE 7, Dec 2011, San Juan, Puerto Rico. pp.1250010, ⟨10.1142/S0129156412500103⟩ |
Purely radiative exciton recombination in (Al,Ga)N/GaN quantum wells grown on the a-facet of GaN crystals.International Workshop on Nitride semiconductors (IWN 2012)., Oct 2012, Sapporo, Japan |
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Study of the effect of rapid thermal annealing in high Cd content Zn1-XCdXO nanowires grown by MOCVD.International Workshop on ZnO and Related Materials., Sep 2012, Nice, France |
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Analysis and control of emission properties of InGaN-on-GaN nanocolumns grown by molecular-beam epitaxy on Si(111) substrates.SPIE-Photonic West-OPTO. "Gallium Nitride Materials and Devices VII". (Conference 8262)., Jan 2012, San Francisco, United States |
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E-beam nanopatterning for the ordered growth of GaN/InGaN nanorods.37th International Conference on Micro and Nano Engineering (MNE 2011)., Sep 2011, Berlin, Germany. pp.374, ⟨10.1016/j.mee.2012.07.024⟩ |
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Biexciton-Assisted Relaxation Mechanisms In III-Nitride Based Multi-Quantum Well Microcavities.9th International Conference on Nitride Semiconductors. ICNS9., Jul 2011, Glasgow, United Kingdom |
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Control of the Morphology on Selective Area Growth of GaN Nanocolumns by Rf-Plasma-Assisted MBE.9th International Conference on Nitride Semiconductors - ICNS9., Jul 2011, Glasgow, United Kingdom |
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Emission Control of InGaN Nanocolumns on Si(111) substrates Grown by MBE .9th International Conference on Nitride Semiconductors - ICNS9., Jul 2011, Glasgow, United Kingdom |
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Picosecond Time-Resolved Cathodoluminescence to Probe Exciton Dynamics in GaN and GaN based heterostructuresCathodo-luminescence 2011. , Oct 2011, Gaithersburg, MD, United States |
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Picosecond Time-Resolved Cathodoluminescence to Probe Exciton Dynamics in a-Plane (Al,Ga)N/GaN Quantum Wells.Microscopy and Microanalysis 2011, Aug 2011, Nashville, Tennessee., United States. pp.1868-1869, ⟨10.1017/S143192761101021X⟩ |
Plasma-assisted MBE growth of III-N nanorods: applications to optoelectronic devices and photovoltaics.11th International Conference on Light-Matter Coupling in Nanostructures, PLMCN11, Apr 2011, Berlin, Germany |
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Direct observation of biexciton localization dynamics in (Al,Ga)N/GaN multi quantum wells.38th International Symposium on Compound Semiconductors - ISCS 2011., May 2011, Berlin, Germany |
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Selective area growth of GaN nanocolumns by rf-plasma assisted MBE at low temperature and under nitrogen-rich conditions.9th International Conference on Nitride Semiconductors - ICNS9., Jul 2011, Glasgow, United Kingdom |
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Surface-related optical properties of GaN and InGaN nanocolumns.European Materials Research Society Spring Meeting., May 2011, Nice, France |
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Time-resolved cathodoluminescence on polychromatic light emitting (In,Ga)N quantum wells grown on (11-22) GaN facets.(10th Int. Workshop on Beam Injection Assessment of Microstructures in Semicond - BIAMS 2010jul. 2010, Jul 2010, Halle, Germany. pp.1394, ⟨10.1002/pssc.201084005⟩ |
MBE growth and characterization of InGaN nanocolumns on Silicon substrates.European Materials Research Society Spring Meeting., May 2011, Nice, France |
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MBE growth and characterization of InGaN-based films and nanocolumns on Silicon substrates and GaN templates.2011 German-Japanese-Spanish Joint Workshop on Frontiers in Photonic and Electronic Materials and Devices, Elias Muñoz, Mar 2011, Grenade, Spain |
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Distortion of donor properties in III-nitride based nano-scale systems.International Workshop on Nitride Semiconductors - IWN 2010, Sep 2010, Tampa, Floride., United States |
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Novel Picosecond Time-Resolved Cathodoluminescence to Probe Exciton Recombination Dynamics in GaN and GaN Based Heterostructures.Microscopy and Microanalysis (M&M) 2010, Aug 2010, Portland, United States. pp.500, ⟨10.1017/S1431927610058162⟩ |
Carrier localization and surface effects in InGaN nanocolumns grown by plasma-assisted molecular beam epitaxy.International Workshop on Nitride Semiconductors - IWN 2010, Sep 2010, Tampa, Floride., United States |
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Spontaneous and ordered growth of III-N nanocolumns: growth mechanisms and applications to Optoelectronic Devices.International Workshop on Nitride Semiconductors - IWN 2010, Sep 2010, Tampa, Floride., United States |
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Selective area growth of GaN nanocolumns by rf-plasma-assisted MBE.16th International Conference on Molecular Beam Epitaxy (MBE 2010), Aug 2010, Berlin, Germany |
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On the spontaneous and ordered growth of III-N nanocolumns: growth on nonpolar substrates and applications to Optoelectronic Devices.39 th International School and Conference on the Physics of Semiconductors., Jun 2010, Jaszowiec, Poland |
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Internal efficiency of LEDs: An application of Quantum Mechanics.ForumLED - Europe 2010, Dec 2010, Lyon, France |
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Exciton dynamics in a-plane (Al,Ga)N/GaN single quantum wells grown by molecular beam epitaxy on ELO-GaN.International Workshop on Nitride Semiconductors - IWN 2010, Sep 2010, Tampa, Floride., United States |
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Low-temperature picosecond time-resolved cathodoluminescence study of localization in a-plane GaN.Int. Conf. on Nitride Semiconductors - ICNS8., Oct 2009, Jeju, South Korea |
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Polarized emission from a single GaN/AlN quantum dot : Experiment and theoryJournées Boîtes Quantiques, Jun 2009, Grenoble, France |
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Picosecond time-resolved cathodoluminescence to study GaN based materials2nd GCOE International Symposium on Photonics and Electronics Science and Engineering, Mar 2009, Kyoto, Japan |
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Effect of the internal electric field on excitonic transitions in ZnO/(Zn,Mg)O quantum wells.9th Physics of Light-Matter Coupling and Nanostructures - PLMCN., Apr 2009, Lecce, Italy |
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Which quasi-particles in wide band gap bulk microcavities ?8th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN8), Apr 2008, Tokyo, Japan |
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Time-resolved photoluminescence of GaN nanocolumns grown by molecular beam epitaxy on Si.International Workshop on Nitride Semiconductors – IWN08, Oct 2008, Montreux, Switzerland |
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Propriétés optiques de nanostructures à base de ZnO12èmes Journées Nano, Micro et Optoélectroniques, Jun 2008, Saint-Pierre d'Oléron, France |
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Polarized emission from a single GaN/AlN quantum dot : Experiment and theoryInternational Conference on LightMatter Coupling in Nanostructures (PLMCN8), Apr 2008, Tokyo, Japan |
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Time-resolved spectroscopy of excitonic transitions in ZnO/(Zn,Mg)O quantum wells grown by MBE14th European Molecular Beam Epitaxy Workshop (Euro-MBE), Mar 2008, Grenade, Spain |
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Etude du couplage fort exciton-photon dans les microcavités massives ZnO par photoluminescence11ème Journées de la Matière Condensée (JMC11), Aug 2008, Strasbourg, France |
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Polarized emission from a single GaN/AlN quantum dot : Experiment and theoryInternational Workshop on Nitride Semiconductors (IWN2008), Oct 2008, Montreux, Switzerland |
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Emission polarisée d'une boîte quantique unique GaN/AlN : expérience et théorie11ème Journées de la Matière Condensée, Aug 2008, Strasbourg, France |
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Internal electric field in ZnO/Zn1-xMgxO in single quantum wells.Fifth International Workshop on Zinc Oxide and Related Materials., Sep 2008, Ypsilanti, Michigan., United States |
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Emission properties of basal stacking faults in a-plane gallium nitride9th International Workshop on Beam Injection Assessment of Microstructures in Semiconductors. BIAMS 2008, Jun 2008, Tolède, Spain |
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Time-resolved spectroscopy of excitonic transitions in ZnO/(Zn, Mg)O quantum wells6th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN 2006), J. Christen, Sep 2006, Magdeburg, Germany. pp.352, ⟨10.1016/j.spmi.2007.03.030⟩ |
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Synthes de nanofils de ZnO dans des matériaux poreux ordonnés: experience et simulation moléculaireMatériaux 2006, Nov 2007, Dijon, France |
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Linear polarization of the emission of a single polar GaN/AlN quantum dot7th International Conference of Nitride Semiconductors (ICNS-7) , Sep 2007, Las Vegas, United States |
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Radiative lifetime in wurtzite GaN/AlN quantum dots.International Symposium on Blue Laser and Light Emitting Diodes (ISBLED06), May 2006, Montpellier, France. pp.183, ⟨10.1002/pssc.200673559⟩ |
Micro-Photoluminescence of isolated GaN/AlN hexagonal QDs: Role of the trapping dynamics of charges at AlN defects14th European Molecular Beam Epitaxy Workshop (14th Euro-MBE), Mar 2007, Grenade, Spain |
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Unusual dynamics of time-resolved emission from wide-band gap quantum dots.Workshop on Advances in Physics and Applications of Low-Dimensional Systems, Jul 2007, Brazilia, Brazil |
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Time-resolved spectroscopy of excitonic transitions in ZnO/(Zn,Mg)O quantum wells grown by MBE.14th Euro-MBE Workshop., Mar 2007, Grenade, Spain |
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Morphology control of ZnO nanomaterials using double hydrophilis block polymers2007 MRS fall meeting, Nov 2007, Boston, United States. pp.1 |
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Contrôle de la croissance de nanomatériaux d'oxyde de zinc par des copolymères diblocs hydrophiles.Matériaux 2006, Fédération Française des Matériaux, Nov 2006, Dijon, France |
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Optical properties of quantum nanostructures based on wide band-gap semiconductor compounds.6th French-Japanese Workshop on Nanomaterials. , Mar 2006, Sapporo, Japan |
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Polar and non-polar ZnO/ZnMgO quantum well heterostructuresInternational Symposium on Blue Lasers and Light Emitting Diodes – ISBLLED06., May 2006, Montpellier, France |
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k.P energy band structure of ZnO/Zn1-xMgxO quantum well heterostructuresE-MRS Spring Meeting, May 2005, Strasbourg, France. pp.91, ⟨10.1016/j.spmi.2005.08.033⟩ |
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Optical properties of ZnO nanorods and nanowiresE-MRS Spring Meeting, May 2005, Strasbourg, France. pp.358, ⟨10.1016/j.spmi.2005.08.079⟩ |
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Study of Sharp Photoluminescence Spectra of Individual GaN/AlN Quantum Dots. Spectral Diffusion Effects.International Workshop on Nitrides Semiconductors (IWN), Oct 2006, Kyoto, Japan |
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Morphology Control of ZnO Nanomaterials using Double Hydrophilic Block CopolymersMRS Fall Meeting, Dec 2005, Boston, United States. pp.Rb15-05.1 |
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Time resolved photoluminescence study of ZnO/(Zn,Mg)O quantum wellsInternational Conference on Materials for Advanced Technologies (ICMAT 2005) Symposium N — ZnO and Related Materials, Jul 2005, Singapour, Singapore. pp.12-15, ⟨10.1016/j.jcrysgro.2005.10.034⟩ |
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Carrier recombination dynamics and internal electric fields in GaN/AlN self-organized quantum dots.6th International Conference on Nitride Semiconductors (ICNS6). , Aug 2006, Brème, Germany |
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Synthèse de nanofils de ZnO dans des Matériaux Poreux Ordonnés: Experience et Simulation Moléculaire.Matériaux 2006, Fédération Française des Matériaux, Nov 2006, Dijon, France |
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Time resolved photoluminescence of ZnO / (Zn,Mg)O quantum wells. Internal electric field effects.E-MRS Spring Meeting - Symposium G : ZnO and Related Materials., May 2005, Strasbourg, France |
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Longitudinal-optical phonon broadening due to nitrogen atom incorporation in InGaAsN/GaAs quantum wells5th International Conference on Light–Matter Coupling in Nanostructures (PLMCN5)., Jun 2005, Glasgow, United Kingdom. pp.3887, ⟨10.1002/pssc.200562039⟩ |
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Continuous wave and time resolved spectroscopy of InAsN/GaAsN based quantum dots5th International Conference on Light–Matter Coupling in Nanostructures (PLMCN5). , Jun 2005, Glasgow, United Kingdom. pp.2598-2603, ⟨10.1002/pssa.200562030⟩ |
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Enhancement of localization and confinement effects in quaternary group-III nitride multi-quantum wells on SiC substrateEXMATEC'04 - 7th Int. Conf. on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies., Jun 2004, Montpellier, France. pp.642, ⟨10.1002/pssa.200460455⟩ |
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Evidence de l'interaction dipôle-dipôle dans la photoluminescence résolue en temps des boîtes quantiques GaN/AlN.Journées Nationales Micro- et Opto-électronique – Xèmes JNMO., Jun 2004, La Grande Motte, France |
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Micro-photoluminescence of GaN quantum dots embedded in 100 nm wide cylindrical AlN pillarsEuropean Materials Research Society 2004, Symposium L. InN, GaN, AlN and Related Materials, their Heterostructures and Devices., European Materials Research Society, May 2004, Strasbourg, France. pp.783-790, ⟨10.1016/j.spmi.2004.09.034⟩ |
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Surprisingly low built-in electric fields in quaternary InAlGaN heterostructures.1st E-MRS Fall Meeting ., European Materials Research Society, Sep 2003, Varsovie, Poland. pp.190-194, ⟨10.1002/pssa.200303980⟩ |
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Nontrivial carrier recombination dynamics and optical properties of over-excited GaN/AlN quantum dots5th International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2004), Mar 2004, Gyeongju, South Korea. pp.2779-2782, ⟨10.1002/pssb.200404996⟩ |
Carrier Recombination Dynamics of Over-Excited Hexagonal GaN/AlN Quantum Dots.E-MRS Spring Meeting - Symposium L., European Materials Research Society, May 2004, Strasbourg, France |
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Carrier recombination processes in GaAsN: from the dilute limit to alloyingE-MRS Spring Meeting, European Materials Society, May 2004, Strasbourg, France. pp.365, ⟨10.1049/ip-opt:20040867⟩ |
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New model of electron-hole pair recombination in (Ga,In)N/GaN low-dimensional systems5th International Conference on Nitride Semiconductors - ICNS 5., May 2003, Nara, Japan |
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Two-dimensional “pseudo-donor–acceptor-pairs” model of recombination dynamics in InGaN/GaN quantum wellsInternational Conference on Superlattices, Nano-structures and Nano-devices - ICSNN 2002., Jul 2002, Toulouse, France. pp.64-67, ⟨10.1016/S1386-9477(02)00762-2⟩ |
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Optical properties of GaN/AlN quantum boxes under high photo-excitation5th International Conference on Nitride Semiconductors (ICNS-5), Axel Hoffmann, May 2003, Nara, Japan. pp.2666-2669, ⟨10.1002/pssc.200303270⟩ |
Coexistence in photoluminescence of free exciton and bound exciton in low nitrogen content GaInNAs layers5th International Conference on Nitride Semiconductors - ICNS 5., May 2003, Nara, Japan. pp.2631, ⟨10.1002/pssc.200303271⟩ |
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Photo-induced interband absorption in group-III nitride quantum wellsInternational Conference on Superlattices, Nano-structures and Nano-devices - ICSNN 2002., Jul 2002, Toulouse, France. pp.247-249, ⟨10.1016/S1386-9477(02)00785-3⟩ |
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Original physical properties of low-dimensional systems based on group-III nitride semiconductors.1st E-MRS Fall Meeting ., European Materials Research Society, Sep 2003, Varsovie, Poland |
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Optical properties of group-III nitride based quantum wells and quantum boxes.12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. , Jun 2002, Smolenice, Slovakia. pp.227 - 232 ⟨10.1109/SIM.2002.1242761⟩ |
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Small Built-in Electric Fields in Quaternary InAlGaN HeterostructuresInternational Workshop on Nitride Semiconductors (IWN 2002), Jul 2002, Aix-la-Chapelle, Germany. pp.764-768, ⟨10.1002/1521-3951(200212)234:3<764::AID-PSSB764>3.0.CO;2-0⟩ |
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Light-Hole and Heavy-Hole Excitons: the Right Probe for the Physics of Low N Content GaAsNInternational Workshop on Nitride Semiconductors (IWN 2002), Jul 2002, Aix-la-Chapelle, Germany. pp.778-781, ⟨10.1002/1521-3951(200212)234:3<778::AID-PSSB778>3.0.CO;2-H⟩ |
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Highly Photo-Excited Nitride Quantum Wells: Threshold for Exciton Bleaching3rd International Conference on Nitride Semiconductors, Bernard GIL; Pierre LEFEBVRE, Jul 1999, Montpellier (FR), France. pp.481 - 486, ⟨10.1002/(SICI)1521-3951(199911)216:1<481::AID-PSSB481>3.0.CO;2-K⟩ |
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Microcalorimetric absorption spectroscopy in GaN–AlGaN quantum wellsEuropean-MRS Spring Meeting - Symposium L : Nitrides and Related Wide Band Gap Materials, Jun 1998, Strasbourg, France. pp.319 - 322, ⟨10.1016/S0921-5107(98)00363-8⟩ |
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Optical properties of InGaN/GaN multiple quantum wells7th International Conference on Silicon Carbide, III-Nitrides and Related Materials (ICSCIII-N 97), Aug 1997, STOCKHOLM (SWEDEN), France. pp.1295-1298 |
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Croissance de multi-puits quantiques dans le système (Al)GaInAs sur AlGaAsSb accordé sur InPSéminaire National : Epitaxie par Jets Moléculaires, 1997, Saint-Aygulf, France |
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Universal formulation of excitonic linear absorption spectra in all semiconductor microstructures7th International Conference on Superlattices Microstructures and Microdevices, Aug 1994, Banff, AB Canada, Canada. pp.19 - 21, ⟨10.1006/spmi.1995.1005⟩ |
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Universal formulation of excitonic linear absorption spectra in all semiconductor microstructures7th International Conference on Superlattices Microstructures and Microdevices, Aug 1994, Banff, AB Canada, Canada. pp.19 - 21, ⟨10.1006/spmi.1995.1005⟩ |
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General formalism for excitonic absorption edges in confined systems with arbitrary dimensionality3rd International Conference on Optics of Excitons in Confined Systems, Aug 1993, Montpellier, France. pp.377 - 380, ⟨10.1051/jp4:1993579⟩ |
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Low dimensionality semiconductors: modelling of excitons via a fractional-dimensional space4èmes Journées de Microélectronique et Optoélectronique III-V, Oct 1992, La Grande Motte, France. pp.1783 - 1789, ⟨10.1051/jp3:1993237⟩ |
Hetero- and multi-quantum well structures in wide-gap II-VI semiconductorsE-MRS Advanced Research Workshop, Jan 1991, Montpellier, France. pp.A1 - A7, ⟨10.1088/0268-1242/6/9A/001⟩ |
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FINE STRUCTURE OF EXCITONS IN QUANTUM WELLSModulated Semiconductor Structures III, Jul 1987, Montpellier (France), France. pp.C5-549-C5-552, ⟨10.1051/jphyscol:19875118⟩ |
Tuning GaN/AlGaN quantum well emission by deposition of Few-Layer Graphene and Nickel/Gold filmsICNS -14th International Conference on Nitride Semiconductors, Nov 2023, Fukuoka, Japan. |
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Probing the Mott transition of indirect excitons in GaN/(AlGa)N heterostructuresInternational Workshop on Nitride Semiconductors (IWN 2022), Oct 2022, Berlin, Germany |
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On the nature of light emission in polar GaN/(AlGa)N quantum wells.12th International Conference on Nitride Semiconductors – ICNS12., Jul 2017, Strasbourg, France. |
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Transport of Indirect Excitons in Polar GaN/AlGaN Quantum Wells.Condensed Matter in Paris – CMD25 – JMC14. , Aug 2014, Paris, France. |
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Transport of Indirect Excitons in Polar GaN/AlGaN Quantum Wells.Compound Semiconductor Week 2014, May 2014, Montpellier, France. |
Dipolar exciton fluids in (Al,Ga)N/GaN quantum wells14th International Conference on the Physics of Light-Matter Coupling in Nanostructures - PLMCN14, May 2013, Hersonissos, Crète, Greece. |
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Time-resolved Photoluminescence spectroscopy of Zn1-XCdXO nanowires.International Workshop on ZnO and Related Materials., Sep 2012, Nice, France |
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Role of the dielectric mismatch on the emission properties of GaN nanostructures.International Workshop on Nitride semiconductors (IWN 2012)., Oct 2012, Sapporo, Japan |
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Optical properties of a hybrid nitride-ZnO microcavity.SPIE-OPTO-Photonic West. "Gallium Nitride Materials & Devices VII"., Jan 2012, San Francisco, United States |
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Time-resolved photoluminescence of high-aluminum-content (Al,Ga)N quantum wells and epilayers emitting in the 215-255 nm range.International Workshop on Nitride semiconductors (IWN 2012)., Oct 2012, Sapporo, Japan |
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Excitonic effects in GaN stacking faults and crystal phase quantum wellsInternational Conference on the Physics of Semiconductors, Jul 2012, Zürich, Switzerland |
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Radiative Recombination Governed Lifetimes In Non-polar (Al,Ga)N/GaN Quantum Wells Grown On Bulk GaN Crystals.9th International Conference on Nitride Semiconductors. ICNS9., Jul 2011, Glasgow, United Kingdom |
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Dynamics of cavity biexcitons in III-Nitride based multi quantum well MicrocavitiesOptics of Excitons in Confined Systems (OECS 12)., Sep 2011, Paris, France |
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Radiative recombination limited lifetimes in non-polar (Al,Ga)N/GaN quantum wells grown on bulk GaN crystals.38th International Symposium on Compound Semiconductors - ISCS38., May 2011, Berlin, Germany |
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Growth and Characterization of InGaN/GaN Quantum Dots for violet-blue Applications9th International Conference on Nitride Semiconductors - ICNS9., Jul 2011, Glasgow, United Kingdom |
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MBE growth and characterization of InN/InGaN thin films and nanostructures on GaN templates and Si(111) substrates.16th International Conference on Molecular Beam Epitaxy (MBE 2010), Aug 2010, Berlin, Germany |
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GaN nanocolumns grown on Si(111) by plasma-assisted MBE: Correlation of structural and optical properties with growth parameters.3rd International Symposium on Growth of III-Nitrides - ISGN3., Jul 2010, Montpellier, France |
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Radiative Recombination Limited Lifetimes in a-plane (Al,Ga)N/GaN single quantum wells grown on GaN.International Workshop on Nitride Semiconductors - IWN 2010, Sep 2010, Tampa, Floride., United States |
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Exciton relaxation and recombination mechanisms in a-plane GaN probed by time-resolved cathodoluminescence.10th International Workshop on Beam Injection Assessment of Microstructures in Semiconductors - BIAMS 2010, Jul 2010, Halle (Saale), Germany |
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Radiative lifetimes of localized and free excitons in homoepitaxial non-polar (Al,Ga)N/GaN single quantum well.39 th International School and Conference on the Physics of Semiconductors., Jun 2010, Jaszowiec, Poland |
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Exciton localization on basal stacking faults in a-plane GaN probed by picosecond time-resolved cathodoluminescence.Int. Conf. On Optics of Excitons in Confined Systems - OECS11., Sep 2009, Madrid, Spain |
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Strong coupling of multiple branches polariton in a ZnO microcavity.Int. Conf. On Optics of Excitons in Confined Systems - OECS11., Sep 2009, Madrid, Spain |
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Optical properties of V-pits in GaN through temperature-dependent picosecond Time-Resolved Cathodolminescence (pTRCL)Int. Conf. on Nitride Semiconductors - ICNS8., Oct 2009, Jeju, South Korea |
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Spectroscopy of GaN nanocolumns grown by molecular beam epitaxy on Si.Meeting annuel de la Société Suisse de Physique., Mar 2008, Genève, Switzerland |
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Which quasi-particle in wide band gap bulk microcavities?2nd International School on Nanophotonics , Sep 2007, Maratea, Italy. |
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Excitons in GaN/AlGaN homoepitaxial quantum wells grown along the nonpolar (02-11) direction on bulk GaN substrates.6th International Conference on Nitride Semiconductors (ICNS6). , Aug 2006, Brème, Germany. |
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Determination of internal electric field in ZnO/(Zn,Mg)O quantum wells from time resolved photoluminescence experiments28th International Conference on the Physics of Semiconductors - ICPS 28. , Jul 2006, Vienne, Austria. |
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ZnO / (Zn,Mg)O Quantum Wells : a Time Resolved Photoluminescence StudyInternational Symposium on Blue Lasers and Light Emitting Diodes – ISBLLED06., May 2006, Montpellier, France |
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Micro-photoluminescence of isolated hexagonal GaN/AlN quantum dots : role of the electron-hole dipoleWolfgang Jantsch; Friederich Schafler. 28th International Conference on the Physics of Semiconductors - ICPS 28. , Jul 2006, Vienne, Austria. AIP Publishing, AIP Conference Proceedings, 893, pp.941, 2007, PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors - ICPS 2006. ⟨10.1063/1.2730203⟩ |
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Localization effects in InGaN/GaN wide quantum well structures grown on bulk GaN crystals.6th International Conference on Nitride Semiconductors (ICNS6). , Aug 2006, Brème, Germany. |
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Amélioration de l’efficacité radiative dans les puits quantiques à base d’(Al,Ga,In)N pour les composants optoélectroniquesJournées du GDR "Semiconducteurs à Grands Gaps"., May 2004, Fréjus, France |
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Dynamique de recombinaison des porteurs dans des puits quantiques GaInAsN/GaAs.9èmes Journées de la Matière Condensée, Aug 2004, Nancy, France |
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Malices et fourberies des boîtes quantiques GaN/AlN.Journées Nationales Micro- et Opto-électronique – Xèmes JNMO., Jun 2004, La Grande Motte, France. |
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Continuous-wave versus time-resolved photo-luminescence of GaN/AlN quantum dots.Summer School "Semiconductor Quantum Dots: Physics and Devices"., Sep 2004, Ascona, Switzerland |
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Carrier recombination dynamics in GaN/AlN quantum dots.EXMATEC'04 - 7th Int. Conf. on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies., Jun 2004, Montpellier, France |
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Evolution of internal electric fields with the wel thickness of quaternary InAlGaN quantum wellsJoint 19th AIRAPT - 41th EHPRG Int. Conf. on High Pressure Science and Technology , Jul 2003, Bordeaux, France |
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Nonlinear optical absorption induced by high photo-excitation of group-III nitride based quantum wells5th International Conference on Nitride Semiconductors - ICNS 5., May 2003, Nara, Japan. |
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Small internal electric fields in quaternary InGaAlN heterostructuresMichael Shur; Arturas Zukauskas. NATO Advanced Research Workshop on UV Solid State Light Emitters and Detectors., Jun 2003, Vilnius, Lithuania. Kluwer Academic Publisher, Dordrecht, Pays-Bas.; lOS Press, Amsterdam, Pays-Bas.; NATO Scientific Affairs Division., 144, pp.215-222, UV Solid-State Light Emitters and Detectors. NATO Science Series II: Mathematics, Physics and Chemistry. ⟨10.1007/978-1-4020-2103-9⟩ |
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Internal electric fields in quaternary InAlGaN heterostructures5th International Conference on Nitride Semiconductors - ICNS 5., May 2003, Nara, Japan. |
Proceedings of the 7th International Conference on Optics and Excitons in Confined Systems (OECS7).Pierre Lefebvre; Gérald Bastard. 7th International Conference on Optics and Excitons in Confined Systems (OECS7)., Sep 2001, Montpellier, France. 190 (2-3), WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, pp.303-603 (Part 1) et 605-870 (Part 2), 2002, Proceedings of the 7th International Conference on Optics and Excitons in Confined Systems (OECS7)., ⟨10.1002/1521-396X(200204)190:2<303::AID-PSSA303>3.0.CO;2-B⟩ |
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Proceedings Symposium H, "GaN & Related Compounds". E-MRS Spring Meeting.Pierre Lefebvre; Enrique Calleja; Tadeusz Suski; Jürgen Christen; Hiroshi Amano; James Speck; Markus Kamp. E-MRS Spring Meeting. Symposium H, "GaN & Related Compounds". , Jun 2002, Strasbourg, France. 93 (1-3), Elsevier Science B.V., pp.1-245, 2002, ⟨10.1016/S0921-5107(02)00114-9⟩ |