Richard DAUBRIAC
12
Documents
Publications
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Impact of surface reflectivity on the ultra-fast laser melting of silicon-germanium alloysMaterials Science in Semiconductor Processing, 2023, 165, pp.107635. ⟨10.1016/j.mssp.2023.107635⟩
Article dans une revue
hal-04344631v1
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Structural and Electrical Characterizations of BiSb Topological Insulator Layers Epitaxially Integrated on GaAsCrystal Growth & Design, 2022, 22 (8), pp.5081-5091. ⟨10.1021/acs.cgd.2c00585⟩
Article dans une revue
hal-03775836v1
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A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si 1− x Ge x and Si layersBeilstein Journal of Nanotechnology, 2018, 9, pp.1926 - 1939. ⟨10.3762/bjnano.9.184⟩
Article dans une revue
hal-01921179v1
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Study of the electrical and structural properties of Ru thin films annealed by Microsecond UV Laser Annealing for future BEOL interconnections2023 E-MRS Fall Meeting, Sep 2023, Warsaw, Poland
Communication dans un congrès
hal-04442370v1
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Topological insulator Bi1-xSbx films on GaAs substrates as current-induced Spin-Orbit Torques generators2023 E-MRS Fall Meeting, E-MRS, Sep 2023, Warsaw (Varsovie), Poland
Communication dans un congrès
hal-04297125v1
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Failure Mode Analysis in Microsecond UV Laser Annealing of Cu Thin FilmsIEEE International Interconnect Technology Conference (IITC) 2022, Jun 2022, San José, California, United States. ⟨10.1109/iitc52079.2022.9881308⟩
Communication dans un congrès
hal-03795894v1
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Stress relaxation and dopant activation in nsec laser annealed SiGeIWJT - International Workshop on Junction Technology, Jun 2021, Kyoto (on line), Japan. ⟨10.23919/IWJT52818.2021.9609361⟩
Communication dans un congrès
hal-03449341v1
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Dopant Activation in Ultra-thin SiGeOI and SOI layers characterised by Differential Hall EffectJoint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Mar 2018, Grenade, Spain
Communication dans un congrès
hal-01735436v1
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Differential hall characterization of shallow strained SiGe layers2016 IEEE Nanotechnology Materials and Devices Conference (NMDC), Oct 2016, Toulouse, France. ⟨10.1109/NMDC.2016.7777082⟩
Communication dans un congrès
hal-01730652v1
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High performance CMOS FDSOI devices activated at low temperature2016 IEEE Symposium on VLSI Technology, Jun 2016, Honolulu, United States. ⟨10.1109/VLSIT.2016.7573407⟩
Communication dans un congrès
hal-01730659v1
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A Differential Hall Effect method with sub-nanometre resolution for active dopant concentration profiling in ultra-thin Si 1-x Ge x and Si doped layers2018
Pré-publication, Document de travail
hal-01730674v1
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Caractérisation de techniques d'implantations ioniques alternatives pour l'optimisation du module source-drain de la technologie FDSOI 28nmMicro et nanotechnologies/Microélectronique. INSA de Toulouse, 2018. Français. ⟨NNT : 2018ISAT0031⟩
Thèse
tel-02087031v2
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