Richard DAUBRIAC

23
Documents

Publications

Publications

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Evolution of the liquid/solid interface roughness in Si$_{1-x}$Ge$_x$ layers processed by nanosecond laser annealing

R. Demoulin , Richard Daubriac , S. Kerdilès , L. Dagault , O. Adami et al.
Applied Surface Science, 2025, 684, pp.161982. ⟨10.1016/j.apsusc.2024.161982⟩
Article dans une revue hal-04821556 v1
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Nanosecond laser annealing: Impact on superconducting silicon on insulator monocrystalline epilayers

Y. Baron , J. Lábár , S. Lequien , B. Pécz , R. Daubriac et al.
APL Materials, 2024, 12 (12), ⟨10.1063/5.0231177⟩
Article dans une revue hal-04823654 v1

Laser‐Annealed SiO 2 /Si 1− x Ge x Scaffolds for Nanoscaled Devices, Synergy of Experiment, and Computation

Damiano Ricciarelli , Jonas Müller , Guilhem Larrieu , Ioannis Deretzis , Gaetano Calogero et al.
Physica Status Solidi A (applications and materials science), 2024, 221 (24), pp.2400120. ⟨10.1002/pssa.202400120⟩
Article dans une revue cea-04769530 v1
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Large-Scale Epitaxial Integration of Single-Crystalline BiSb Topological Insulator on GaAs (111)A

Mohamed Ali Khaled , Leonardo Cancellara , Salima Fekraoui , Richard Daubriac , François Bertran et al.
ACS Applied Electronic Materials, 2024, 6 (5), pp.3771-3779. ⟨10.1021/acsaelm.4c00400⟩
Article dans une revue hal-04584442 v1
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Impact of surface reflectivity on the ultra-fast laser melting of silicon-germanium alloys

Damiano Ricciarelli , Giovanni Mannino , Ioannis Deretzis , Gaetano Calogero , Giuseppe Fisicaro et al.
Materials Science in Semiconductor Processing, 2023, 165, pp.107635. ⟨10.1016/j.mssp.2023.107635⟩
Article dans une revue hal-04344631 v1
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Structural and Electrical Characterizations of BiSb Topological Insulator Layers Epitaxially Integrated on GaAs

Dima Sadek , Richard Daubriac , Corentin Durand , Richard Monflier , Quentin Gravelier et al.
Crystal Growth & Design, 2022, 22 (8), pp.5081-5091. ⟨10.1021/acs.cgd.2c00585⟩
Article dans une revue hal-03775836 v1

Superconducting Polycrystalline Silicon Layer Obtained by Boron Implantation and Nanosecond Laser Annealing

R. Daubriac , P. Acosta Alba , C. Marcenat , S. Lequien , T. Vethaak et al.
ECS Journal of Solid State Science and Technology, 2021, 10 (1), pp.014004. ⟨10.1149/2162-8777/abdc41⟩
Article dans une revue hal-04442429 v1

Superconducting Polycrystalline Silicon Layer Obtained by Boron Implantation and Nanosecond Laser Annealing

R. Daubriac , P. Acosta Alba , C. Marcenat , S. Lequien , T. Vethaak et al.
ECS Journal of Solid State Science and Technology, 2021, 10 (1), pp.014004. ⟨10.1149/2162-8777/abdc41⟩
Article dans une revue hal-03121810 v1
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A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si 1− x Ge x and Si layers

Richard Daubriac , Emmanuel Scheid , Hiba Rizk , Richard Monflier , Sylvain Joblot et al.
Beilstein Journal of Nanotechnology, 2018, 9, pp.1926 - 1939. ⟨10.3762/bjnano.9.184⟩
Article dans une revue hal-01921179 v1

Epitaxial Topological Insulator Bi1 xSbx lms on GaAs substrates for Spintronic applications

Mohamed Ali Khaled , Danny Petty Gweha Nyoma , Salima Fekraoui , Leonardo Cancellara , Richard Daubriac et al.
Journées de la Matière Condensée, Société Française de Physique, Oct 2024, Marseille, France
Communication dans un congrès hal-04949065 v1

Characterization of epitaxial Bi1-xSbx topological insulator thin films on GaAs(111) substrates

Salima Fekraoui , Ali Khaled Mohamed , Richard Daubriac , Quentin Gravelier , Richard Monflier et al.
Journées de la Matière Condensée 2024, Société Française de Physique, Oct 2024, Marseille, France
Communication dans un congrès hal-04946094 v1

Study on the electrical properties of ultrathin in situ Boron-doped strained Si0.7Ge0.3 layers annealed by nanosecond pulsed laser

Richard Daubriac , Rémi Demoulin , Sébastien Kerdilès , P. Acosta-Alba , M. Opprecht et al.
2023 E-MRS Spring Meeting, May 2023, Strasbourg, France
Communication dans un congrès hal-04442327 v1

Topological insulator Bi1-xSbx films on GaAs substrates as current-induced Spin-Orbit Torques generators

Mohamed Ali Khaled , Richard Daubriac , Leonardo Cancellara , Quentin Gravelier , Thomas Blon et al.
2023 E-MRS Fall Meeting, E-MRS, Sep 2023, Warsaw (Varsovie), Poland
Communication dans un congrès hal-04297125 v1

Study of the electrical and structural properties of Ru thin films annealed by Microsecond UV Laser Annealing for future BEOL interconnections

Richard Daubriac , Leonardo Cancellara , Mohamed Ali Khaled , Lu Lu , Zeinab Chehadi et al.
2023 E-MRS Fall Meeting, Sep 2023, Warsaw, Poland
Communication dans un congrès hal-04442370 v1
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Failure Mode Analysis in Microsecond UV Laser Annealing of Cu Thin Films

Rémi Demoulin , Richard Daubriac , Louis Thuries , Emmanuel Scheid , Fabien Rozé et al.
IEEE International Interconnect Technology Conference (IITC) 2022, Jun 2022, San José, California, United States. ⟨10.1109/iitc52079.2022.9881308⟩
Communication dans un congrès hal-03795894 v1

Stress relaxation and dopant activation in nsec laser annealed SiGe

Fuccio Cristiano , Richard Monflier , Richard Daubriac , Rémi Demoulin , Emmanuel Scheid et al.
IWJT - International Workshop on Junction Technology, Jun 2021, Kyoto (on line), Japan. ⟨10.23919/IWJT52818.2021.9609361⟩
Communication dans un congrès hal-03449341 v1
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Dopant Activation in Ultra-thin SiGeOI and SOI layers characterised by Differential Hall Effect

Richard Daubriac , Emmanuel Scheid , S. Joblot , R. Beneyton , P Acosta Alba et al.
Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Mar 2018, Grenade, Spain
Communication dans un congrès hal-01735436 v1

High performance CMOS FDSOI devices activated at low temperature

L. Pasini , P. Batude , J. Lacord , M. Cassé , B. Mathieu et al.
2016 IEEE Symposium on VLSI Technology, Jun 2016, Honolulu, United States. ⟨10.1109/VLSIT.2016.7573407⟩
Communication dans un congrès hal-01730659 v1

Differential hall characterization of shallow strained SiGe layers

Richard Daubriac , Mahmoud Abou Daher , Emmanuel Scheid , Fuccio Cristiano , S. Joblot et al.
2016 IEEE Nanotechnology Materials and Devices Conference (NMDC), Oct 2016, Toulouse, France. ⟨10.1109/NMDC.2016.7777082⟩
Communication dans un congrès hal-01730652 v1