Sébastien Vinnac

28
Documents

Publications

Publications

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CMOS gate driver with fully integrated fast and robust gate monitoring solution for a full short-circuit protection of sic half bridge power module

Anas El Boubkari , Nicolas C. Rouger , Frédéric Richardeau , Pierre Calmes , Matthew Bacchi et al.

36th EUROPEAN SYMPOSIUM ON RELIABILITY OF ELECTRON DEVICES, FAILURE PHYSICS AND ANALYSIS, Université de Bordeaux, ADERA, Oct 2025, Bordeaux, France

Communication dans un congrès hal-05308086v2
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Surveillance en temps réel et à haute précision de la tension de seuil de grille (VGSTH ) du MOSFET SiC sur bras d'onduleur MLI par l'insertion d'une commutation "spéciale" contrôlée par une architecture de gate-driver parallèle

Frédéric Richardeau , Mathis Picot-Digoix , Sébastien Vinnac , Jean-Marc Blaquière , Stéphane Azzopardi et al.

Symposium de Génie Electrique (SGE 2025), Jul 2025, Toulouse, France

Communication dans un congrès hal-05248644v1
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CMOS Modular Multilevel Active Gate Driver for SiC MOSFET

Tara Niakan , Nicolas C. Rouger , Yazan Barazi , Frédéric Richardeau , Sébastien Vinnac et al.

2025 Energy Conversion Congress & Expo Europe (ECCE Europe), Sep 2025, Birmingham, United Kingdom. pp.1-6, ⟨10.1109/ECCE-Europe62795.2025.11238588⟩

Communication dans un congrès hal-05384982v1
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Low-Voltage Schottky p-GaN HEMT Properties under Extreme Repetitive Short-Circuit Operation Conditions : 2DEG Pinch-off, Stability, Aging, Robustness and Failure-Modes Analysis [Abstract]

Frédéric Richardeau , Lucien Ghizzo , David Trémouilles , Sébastien Vinnac

35th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - ESREF 2024, Sep 2024, Parma, Italy

Communication dans un congrès hal-04713127v1
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On-Line Digital Fine Monitoring of SiC MOSFET Gate-Oxide Health: A Dual-Channel Gate Driving Approach

Mathis Picot-Digoix , T-L Le , S. Azzopardi , Sébastien Vinnac , Frédéric Richardeau et al.

2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Jun 2024, Bremen, Germany. pp.84-87, ⟨10.1109/ISPSD59661.2024.10579698⟩

Communication dans un congrès hal-04647322v2
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CMOS Gate Driver with Integrated Gate Current Monitoring Method for Fault Under Load Short Circuit Detection of SiC Power Modules

Anas El Boubkari , Nicolas Rouger , Frédéric Richardeau , Pierre Calmes , Matthew Bacchi et al.

2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Jun 2024, Bremen, Germany. pp.454-457, ⟨10.1109/ISPSD59661.2024.10579581⟩

Communication dans un congrès hal-04647315v1
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Concept de grille quasi-flottante pour la protection d'un MOSFET SiC et la surveillance de l'intégrité de son oxyde basé sur une architecture de driver à résistances de grilles commutées

Mathis Picot-Digoix , Frédéric Richardeau , Wadia Jouha , Jean-Marc Blaquière , Sébastien Vinnac et al.

Symposium de Génie Électrique, Jul 2023, Lille, France. 6 p

Communication dans un congrès hal-04163149v1
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Design and efficiency measurement of a sub-unit for a 20kW DC-DC multiphase power converter

Bastien Pasquet , Sébastien Vinnac , Jean-Marc Blaquière , Thierry Meynard , Sébastien Sanchez

2023 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles & International Transportation Electrification Conference (ESARS-ITEC), Mar 2023, Venice, Italy. pp.1-6, ⟨10.1109/ESARS-ITEC57127.2023.10114845⟩

Communication dans un congrès hal-04239643v1
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Développement de fonctionnalités rapides, précises et intégrées CMOS, pour la commutation optimale et la protection interne des onduleurs à module SiC MOSFET

Anas Elboubkari , Matthieu Masson , Nicolas C. Rouger , Marc Cousineau , Frédéric Richardeau et al.

SYMPOSIUM DE GENIE ELECTRIQUE (SGE 2023), Jul 2023, Lille, France

Communication dans un congrès hal-04157854v1
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Over-Voltage and Cross-Conduction Hard Switching Stress on Schottky Gate-Type p-GaN HEMT in Half-Bridge Operation Experimental and Physical Approaches [ESREF'23]

Lucien Ghizzo , David Trémouilles , Frédéric Richardeau , Sébastien Vinnac , François Jamin et al.

34th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Oct 2023, Toulouse, France. ⟨10.1016/j.microrel.2023.115172⟩

Communication dans un congrès hal-04252379v1
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p-GaN HEMT Hard Switching Fault Type Short-Circuit Detection Based on the Gate Schottky-Barrier Leakage Current and Using a Dual-Channel Segmented CMOS buffer Gate-Driver

Yazan Barazi , Frédéric Richardeau , Sébastien Vinnac , Nicolas C. Rouger

35th IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD 2023), Hong Kong University of Science and Technology, May 2023, Hong Kong, China. ⟨10.1109/ISPSD57135.2023.10147669⟩

Communication dans un congrès hal-04114246v2
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SiC Power MOSFET Overload Detection, Short-Circuit Protection and Gate-Oxide Integrity Monitoring Using a Switched Resistors Dual-Channel Gate-Driver [ESREF'23]

Mathis Picot-Digoix , Frédéric Richardeau , Wadia Jouha , Jean-Marc Blaquière , Sébastien Vinnac et al.

34th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2023), Oct 2023, Toulouse, France. ⟨10.1016/j.microrel.2023.115082⟩

Communication dans un congrès hal-04252358v1
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Protection rapide et robuste contre les courts-circuits internes de convertisseurs à base de MOSFETs SiC

Yazan Barazi , François Boige , Nicolas C. Rouger , Jean-Marc Blaquière , Sébastien Vinnac et al.

SYMPOSIUM DE GENIE ELECTRIQUE (SGE 2021), 6 - 8 JUILLET 2021, NANTES, FRANCE, Jul 2021, Nantes, France

Communication dans un congrès hal-03287704v1

Towards the implementation of diamond power devices in power converters and measurements of their switching losses

Nicolas C. Rouger , Damien Risaletto , Pierre Lefranc , Pierre-Olivier Jeannin , Hugo Cagnol et al.

MRS Spring Meeting 2021, Apr 2021, Seattle WA, United States

Communication dans un congrès hal-03289135v1
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Short-circuit robustness of parallel SiC MOSFETs and fail-safe mode strategy

François Boige , Asad Fayyaz , Alberto Castellazzi , Frédéric Richardeau , Sébastien Vinnac

European Power Elecrtonics and Applications 2019 - IEEE ECCE Europe, Sep 2019, Gênes, Italy

Communication dans un congrès hal-02334405v1
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Sub-nanosecond delay CMOS Active Gate Driver for Closed-Loop dv/dt Control of GaN Transistors

Bau Plinio , Marc Cousineau , Bernardo Cogo , Frédéric Richardeau , Sébastien Vinnac et al.

31st IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), May 2019, Shanghai, China. ⟨10.1109/ispsd.2019.8757693⟩

Communication dans un congrès hal-02157332v1

First practical evaluation of a complete fail-safe and 100% fault-tolerant inverter for critical load in aerospace application

Frédéric Richardeau , Sébastien Vinnac , Franck Mosser , A. Rashed , A. Boetsch et al.

8th International Conference on Recent Advances in Aerospace Actuation Systems and Components (R3ASC'18), 30 mai-1 juin 2018, Toulouse (FRANCE), 2018, Toulouse, France

Communication dans un congrès hal-03937652v1
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Low-voltage Schottky p-GaN HEMT properties under extreme repetitive short-circuit operation conditions: 2DEG pinch-off, stability, aging, robustness and failure-modes analysis - Selected and Extended Full Paper from ESREF'24

Frédéric Richardeau , L. Ghizzo , D. Trémouilles , S. Vinnac

Microelectronics Reliability, 2025, 173, pp.115871. ⟨10.1016/j.microrel.2025.115871⟩

Article dans une revue hal-05185367v1
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Gate Voltage Dip as a New Indicator for On-Line Health Monitoring of SiC MOSFETs

Mathis Picot-Digoix , Frédéric Richardeau , Jean-Marc Blaquiére , Sébastien Vinnac , Stéphane Azzopardi et al.

IEEE Transactions on Power Electronics, In press, 40 (1), pp.142 - 145. ⟨10.1109/tpel.2024.3476553⟩

Article dans une revue hal-04732708v1
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Quasi-Flying Gate Concept Used for Short-Circuit Detection on SiC Power MOSFETs Based on a Dual-Port Gate Driver

Mathis Picot-Digoix , Frédéric Richardeau , Jean-Marc Blaquière , Sébastien Vinnac , Stéphane Azzopardi et al.

IEEE Transactions on Power Electronics, 2023, pp.1-4. ⟨10.1109/TPEL.2023.3258640⟩

Article dans une revue hal-04039921v1
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Over-voltage and cross-conduction hard switching stress on schottky gate-type p-GaN HEMT in half-bridge operation. Experimental and physical approaches

L. Ghizzo , David Trémouilles , Frédéric Richardeau , S. Vinnac , F. Jamin et al.

Microelectronics Reliability, 2023, 150, pp.115172. ⟨10.1016/j.microrel.2023.115172⟩

Article dans une revue hal-04242294v1
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Commande électronique avancée d'un transistor de puissance au carbure de silicium - Protection extrême et surveillance de l'état de santé de l'oxyde de grille

Mathis Picot-Digoix , Frédéric Richardeau , Jean-Marc Blaquière , Sébastien Vinnac , Thanh Long Le et al.

La Revue de l'électricité et de l'électronique, 2023, 4, 14 p

Article dans une revue hal-04301091v1
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Preconditioning of p-GaN power HEMT for reproducible V measurements

L. Ghizzo , David Trémouilles , Frédéric Richardeau , S. Vinnac , Lucas Moreau et al.

Microelectronics Reliability, 2023, 144, pp.114955. ⟨10.1016/j.microrel.2023.114955⟩

Article dans une revue hal-04049626v1