Thierry Taliercio
- Université de Montpellier (UM)
Publications
Publications
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EXEMPLES D’ACTIVITÉS POUR ACCOMPAGNER LE PORTFOLIO DE COMPÉTENCES DÈS LE BUT 148ème Colloques GEII à Mulhouse, May 2023, Mulhouse, France |
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Le portfolio de compétences : outil d’accompagnement des étudiant.e.s de BUTBiennale Internationale de l'Eduction, de la formation et des pratiques professionnelles, Sep 2023, Paris, France |
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Photonique THz : Lumière laser structurée pour l'émission THz & modulation THz pilotée par laserJournées Nationales d'Optique Guidée, Jul 2023, Lyon, France |
Near-field thermal radiation, thermophotovoltaics and polaritonsThermal Polaritonics Workshop, Apr 2023, Tokyo, France |
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Low bandgap (near-field) TPV: materials and structuresThe 14th World Conference on Thermophotovoltaic Generation of Electricity (TPV-14), Andrej Lenert, May 2023, Online, United States |
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Controlling near-field thermal energy for conversion devices and sensingProgram on Emerging Regimes and Implications of Quantum and Thermal Fluctuational Electrodynamics (Flectro2022), Kavli Institute of Theoretical Physics (KITP), Jul 2022, UC Santa Barbara, United States. ⟨10.26081/K6R93X⟩ |
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Quantum plasmonics and hyperbolic material for biosensingQuantum Sensing and Nano Electronics and Photonics XVIII, Jan 2022, San Francisco, France. pp.59, ⟨10.1117/12.2615652⟩ |
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Waveguide-Integrated optically-tuned THz modulatorFrench-German TeraHertz Conference, May 2022, La gande Motte, France |
Solid-state/optical alternatives to thermoelectricity for thermal-to-electrical energy conversion18th European Conference on Thermoelectrics (ECT), Oct 2022, Barcelona, Spain |
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Photogenerated metasurface-based THz ModulatorGDR Plasmonique Active, Jun 2021, Troyes (France), France |
Low-energy bandgap thermophotovoltaic cells for harnessing near-field thermal photonsC’Nano 2020, The Nanoscience meeting, Nov 2021, Toulouse, France |
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Low-energy bandgap thermophotovoltaic cells for medium-grade heat sources2021 Spring Meeting of the European Materials Research Society (E-MRS), May 2021, En ligne, France |
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Efficient near-field thermophotovoltaic conversion with InSb cells2021 Spring Meeting of the European Materials Research Society (E-MRS), May 2021, En ligne, France |
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Low Optical Power-Driven THz ModulatorGDR Nano TeraMIR, Jun 2021, Metz (France), France |
Near-field thermophotovoltaic conversion with high electrical power density and efficiency above 14%MRS Spring meeting, Symposium "Nanoscale heat transport", Apr 2021, Seattle (remote), United States |
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Efficient near-field thermophotovoltaic conversion with InSb cellsSFT "Nanoscale Heat Transport Days", Jan 2020, Paris, France |
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Long-wave infrared spectral filter with semiconductor materialsNanophotonics VIII, Apr 2020, Online, United States. pp.43, ⟨10.1117/12.2554384⟩ |
Recent advances in near-field thermophotovoltaicssTE2C virtual colloquium, Daniele M. Trucchi, Gaspare Varvaro (CNR-ISM, Roma, Italy), Nov 2020, Online, Italy |
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Near-field radiative heat transfer experiments and thermophotovoltaic conversionFocus Session on « Fluctuational Electrodynamics and Heat Transfer », Progress In Electromagnetism Research (PIERS) 2019 conference, Jun 2019, Rome, Italy |
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Near-field radiative heat transfer measurements between a sphere and a substrate: large temperature differences, geometrical effects and materialsMRS Spring Meeting Symposium "Nanoscale Heat Transport: Fundamentals", Apr 2019, Phoenix, United States |
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Semiconductor-based nanostructures for spectral filteringSPIE Nanoscience + Engineering 2019, Aug 2019, San Diego, United States. ⟨10.1117/12.2527758⟩ |
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Low pump irradiance to modulate THz waves driven by photogenerated carriers in an InAs slab44th International Conference on Infrared, Millimeter, and Terahertz Waves, Sep 2019, Paris, France |
Near-field thermophotovoltaic conversion with InSb cellsE-MRS Fall Meeting Symposium "Nanomaterials thermal transport properties and nanothermodynamics, Sep 2019, Varsovie, Poland |
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Mesures expérimentales du transfert radiatif en champ proche et de la conversion thermophotovoltaïqueJournées Nationales du Réseau Doctoral en Micro-nanoélectronique (JNRDM), Jun 2019, Montpellier, France |
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Photo-generated carriers in InAs slab at THz frequencies induced by a continuous wave low irradianceFrench-German THz Conference, Apr 2019, Kaiserlautern, Germany |
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Semiconductor nanostructures for spectral filteringSPP 9, May 2019, Copenhague, Denmark |
Plasmonic bio-sensing based on highly doped semiconductorsSeminary at Politecnico di Milano, 2018, Milan, Italy |
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All-semiconductor mid-IR plasmonics for femtolitre IR-spectroscopyInternational Conference on Biomedical Photonics, 2018, La Grande Motte, France |
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Plasmonique tout-semi-conducteur pour les applications du moyen-infrarougeCongrès de la Société Française d’Optique, 2018, Toulouse, France |
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Absorbeurs parfaits à base de semi-conducteurs fortement dopés pour la spectroscopie vibrationnelle exaltéeGroupement de Recherches 3430, Plasmonique Moléculaire, Sprectroscopies Exaltées, Journées plénières, 2018, Paris-Saclay, France |
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Near-field radiative heat transfer experiments for thermophotovoltaic conversion5th International Conference on Near-Field Optics, Nanophotonics and Related Techniques (NFO), Aug 2018, Troyes, France |
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Plasmonique tout semiconducteur pour les bio-capteurs16èmes JNMO Journées Nano, Micro, et Opto-électronique, 2018, Cap Esterel-Agay, France |
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Mid-infrared surface plasmon polaritons in a novel highly doped semiconductor34th International Conference on the Physics of Semiconductors, 2018, Montpellier, France |
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Design of efficient photovoltaic cells for near-field thermophotovoltaicsEurotherm 111: Nanoscale and Microscale Heat Transfer VI, Dec 2018, Levi, Finland |
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Plasmonique tout semiconducteur pour l’infrarougeJournée du département Photonique et Onde de l’Institut d’Electronique et des Systèmes, 2018, Montpellier, France |
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III-V semiconductor plasmonics for microfluidic molecular sensingFinal conference of PROMIS, Photonics by the Lake, 2018, Windermere, United Kingdom |
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Near-field radiative heat transfer experiments for thermophotovoltaic conversion: temperature and material dependenceGDRe workshop on Thermal Nanosciences and NanoEngineering, Oct 2018, Lyon, France |
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Surface enhanced infrared absorption with highly doped InAsSb plasmonic nanostructuresGDR NanoTeraMIR, 2018, Montpellier, France |
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Thermophotovoltaic devices for solar and thermal energy conversionJournées Nationales sur l'Énergie Solaire «Congrès JNES 2018», Jun 2018, Villeurbanne, France |
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Highly doped semiconductors based plasmonic devicesFunctional Materials, Materials and devices for green photonics, EMRS Spring Meeting 2018, 2018, Strasbourg, France |
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Near-field radiative heat transfer experiments for thermophotovoltaic conversion: temperature and material dependenceEurotherm 111: Nanoscale and Microscale Heat Transfer VI, Dec 2018, Levi, Finland |
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Plasmonic and metamaterials devices operating from mid infrared to THz frequencies based on highly doped semiconductorsGDR NanoTeraMIR, 2018, Montpellier, France |
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Etude expérimentale du transfert radiative en champ proche pour la conversion thermophotovoltaïqueJournées Nationales sur l’Energie Solaire, Jun 2018, Villeurbanne, France |
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All-semiconductor plasmonic metamaterials for mid-infrared perfect absorption and selective thermal emissionNanophotonics and Micro/Nano Optics International Conference, 2018, Roma, Italy |
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Mid-IR surface enhanced absorption spectroscopy with 1D Highly Si-Doped InAsSb nano-antennasE-MRS Spring Meeting, 2017, Strasbourg, France |
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Surface enhanced infrared absorption with highly doped InAsSb plasmonic nano-antenna arraysNanophotonics and Micro/Nano Optics International Conference, 2017, Barcelone, Spain |
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Zero-dimensional Zener Tunnelling and Plasmon Resonances due to N- and H- Incorporation in the Narrow Gap InAsEDISON (advanced) Fall Conference, 2017, Buffalo, United States |
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Etude spectroscopique de structures résonantes à plasmons de surface localisés par nanoscopie infrarouge au voisinage de la fréquence plasma20ème Forum des microscopies à sonde locale, Mar 2017, Juvignac, France |
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Plasmonic bio-sensing based on highly doped semiconductorsOptics + Photonics (SPIE), 2017, San Diego, United States |
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THz absorbers with highly doped semiconductors based in plasmonic nano-resonatorsE-MRS Spring Meeting, 2017, Strasbourg, France |
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Spectroscopic investigation of localized surface plasmon resonator structure by infrared nanoscopy near the plasma frequencyMETA’17, 2017, Incheon, South Korea |
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Universal metamaterial absorber11th International Congress on Engineered Material Platforms for Novel Wave Phenomena – Metamaterials, 2017, Marseille, France |
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GaSb oxidation for plasmonic enhanced mid-IR molecular spectroscopyNanophotonics and Micro/Nano Optics International Conference, 2017, Barcelone, Spain |
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Surface-enhanced infrared absorption using highly doped InAsSb/GaSb Nanostructures2016 MRS (Material Research Society) Fall Meeting, 2016, Boston, United States |
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Type II heterojunction tunnel diodes based on GaAs for multi-junction solar cells: Fabrication, characterization and simulation2016 IEEE Nanotechnology Materials and Devices Conference (NMDC), Oct 2016, Toulouse, France. pp.7777108, ⟨10.1109/NMDC.2016.7777108⟩ |
THz absorbers with Sb-III highly doped semiconductors based in plasmonic nano-resonatorsIEEE Nanotechnology Materials and Devices Conferences (NDMC), 2016, Toulouse, France |
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Brewster mode : optical monitoring of the semiconductor doping levelPhotonic West OPTO (SPIE), 2016, San Francisco, United States |
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Highly doped InAsSb nanoribbon on GaSb for plasmonics applications13th Infrared Optoelectronics: Materials and devices (MIOMD-XI), 2016, Beijing, China |
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Tuning of the localized surface plasmon wavelength in highly doped InAsSb/GaSb nanostructuresPhotonic West OPTO (SPIE), 2016, San Francisco, United States |
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Optimization of plasmonic grating resonators based on highly-doped semiconductors for sensing applications using 2D finite-difference time-domain simulationsPhotonic West OPTO (SPIE), 2016, San Francisco, United States |
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Highly doped InAsSb plasmonic arrays for mid-infrared biosensingIEEE Nanotechnology Materials and Devices Conferences (NDMC), 2016, Toulouse, France |
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All semiconductor plasmonics for bio-sensingInternational Conference on Energy, Materials & Photonics, 2016, Troyes, France |
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Observation of Fano resonances in highly doped semiconductor plasmonic resonatorsSPIE NanoScience + Engineering, 2015, San Diego, United States |
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Brewster “mode” or how to optically monitor the doping concentration in highly doped semiconductor layersMETA15 Conference, 2015, New York, United States |
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Highly doped semiconductor plasmonics for mid-IR applications7th International Conference on Surface Plasmon Photonics, 2015, Jérusalem, Israel |
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Technologies of oxide confinement and high contrast grating mirrors for mid-infrared VCSELsICTON 2014, Jul 2014, Graz, Austria. pp.1-4, ⟨10.1109/ICTON.2014.6876343⟩ |
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GaSb-based grating regrowth for mid-infrared optoelectronic devices18th IC-MBE, 2014, Flagstaff, United States |
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Localized Surface Plasmons Resonances on GaSb-based materials for Infrared applicationsPhotonics Plamsonics Magneto-optics 2013, IMAGINENANO, 2013, Bilbao, Spain |
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GaSb-based all-semiconductor mid-IR plasmonicsPhotonics West (SPIE), 2013, San Francisco, United States |
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All-semiconductor plasmonics for mid-IR applicationsOptics + Photonics (SPIE), 2013, San Diego, United States |
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Metal-free plasmonics for infrared applications7th Russian-French workshop on Nanosciences and Nanotechnologies, 2013, Novosibirsk, Russia |
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GaAs/GaSb(001) nanostructures at the atomic scaleSPIE Photonics West, Opto-2013, 2013, San Francisco, United States |
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Experimental study of surface plasmons polaritons on arrays of doped and un-doped semiconductors3rd International Conference on Metamaterials, Photonic Crystals and Plasmonics (META2012), 2012, Paris, France |
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Highly doped semiconductors for mid-infrared plasmonics36th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2012), 2012, Porquerolles, France |
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Pseudo-volume-plasmon into arrays of doped and un-doped semiconductors3rd International conference on meta-materials, photonic crystals and plasmonics, META12, 2012, Paris, France |
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GaAs-based monolithic high contrast gratings for mid-infrared VCSELsSemiconductor and Integrated OptoElectronics 2012 (SIOE), 2012, Cardiff, United Kingdom |
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Surface and localized plasmons polaritons on arrays of doped and un-doped semiconductors11th Infrared Optoelectronics: Materials and devices (MIOMD-XI), 2012, Chicago, United States |
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AlOx/GaAs high contrast grating mirrors for mid infrared VCSELsICTON 2012, Jul 2012, Coventry, United Kingdom. pp.1-3, ⟨10.1109/ICTON.2012.6254396⟩ |
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Nanostructured arrays of doped semiconductors for IR nanophotonicsPhotonics Plamsonics Magneto-optics 2011, IMAGINENANO, Apr 2011, Bilbao, Spain |
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Méta-matériau à bande bande interdite photonique ajustable à base de réseaux de semi-conducteursColloque National Méta-matériaux – Orsay, Mar 2011, Orsay, France |
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Optimized GaAs High Contrast Grating Design and Fabrication for Mid-infrared Application at 2.3 μmFrontiers in Optics 2011, Oct 2011, San Jose, United States. pp.CD-ROM Proceedings |
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Highly Tensile-Strained Ga0.5In0.5As/GaSb Heterostructures37th International Symposium on Compound Semiconductors (ISCS2010), 2010, Takamatsu, Japan |
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MBE growth of highly tensile strained Ga(In)As/GaSb quantum wells16th Int. Conf. on Molecular-Beam Epitaxy (MBE16), 2010, Berlin, Germany |
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Tensile-Strained Ga1-xInxAs / GaSb Heterostructures for Mid-IR Applications10th Mid-Infrared Optcal Materials and Devices International Conference (MIOMD-10), 2010, Shanghai, China |
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Polarized emission from a single GaN/AlN quantum dot : Experiment and theoryJournées Boîtes Quantiques, Jun 2009, Grenoble, France |
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Polarized emission from a single GaN/AlN quantum dot : Experiment and theoryInternational Conference on LightMatter Coupling in Nanostructures (PLMCN8), Apr 2008, Tokyo, Japan |
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Polarized emission from a single GaN/AlN quantum dot : Experiment and theoryInternational Workshop on Nitride Semiconductors (IWN2008), Oct 2008, Montreux, Switzerland |
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Which quasi-particles in wide band gap bulk microcavities ?8th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN8), Apr 2008, Tokyo, Japan |
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Micro-Photoluminescence of isolated GaN/AlN hexagonal QDs: Role of the trapping dynamics of charges at AlN defects14th European Molecular Beam Epitaxy Workshop (14th Euro-MBE), Mar 2007, Grenade, Spain |
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Time-resolved spectroscopy of excitonic transitions in ZnO/(Zn, Mg)O quantum wells6th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN 2006), J. Christen, Sep 2006, Magdeburg, Germany. pp.352, ⟨10.1016/j.spmi.2007.03.030⟩ |
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Linear polarization of the emission of a single polar GaN/AlN quantum dot7th International Conference of Nitride Semiconductors (ICNS-7) , Sep 2007, Las Vegas, United States |
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Radiative lifetime in wurtzite GaN/AlN quantum dots.International Symposium on Blue Laser and Light Emitting Diodes (ISBLED06), May 2006, Montpellier, France. pp.183, ⟨10.1002/pssc.200673559⟩ |
Optical properties of ZnO nanorods and nanowiresE-MRS Spring Meeting, May 2005, Strasbourg, France. pp.358, ⟨10.1016/j.spmi.2005.08.079⟩ |
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Study of Sharp Photoluminescence Spectra of Individual GaN/AlN Quantum Dots. Spectral Diffusion Effects.International Workshop on Nitrides Semiconductors (IWN), Oct 2006, Kyoto, Japan |
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Carrier recombination dynamics and internal electric fields in GaN/AlN self-organized quantum dots.6th International Conference on Nitride Semiconductors (ICNS6). , Aug 2006, Brème, Germany |
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Continuous wave and time resolved spectroscopy of InAsN/GaAsN based quantum dots5th International Conference on Light–Matter Coupling in Nanostructures (PLMCN5). , Jun 2005, Glasgow, United Kingdom. pp.2598-2603, ⟨10.1002/pssa.200562030⟩ |
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Longitudinal-optical phonon broadening due to nitrogen atom incorporation in InGaAsN/GaAs quantum wells5th International Conference on Light–Matter Coupling in Nanostructures (PLMCN5)., Jun 2005, Glasgow, United Kingdom. pp.3887, ⟨10.1002/pssc.200562039⟩ |
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Nontrivial carrier recombination dynamics and optical properties of over-excited GaN/AlN quantum dots5th International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2004), Mar 2004, Gyeongju, South Korea. pp.2779-2782, ⟨10.1002/pssb.200404996⟩ |
Carrier Recombination Dynamics of Over-Excited Hexagonal GaN/AlN Quantum Dots.E-MRS Spring Meeting - Symposium L., European Materials Research Society, May 2004, Strasbourg, France |
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Carrier recombination processes in GaAsN: from the dilute limit to alloyingE-MRS Spring Meeting, European Materials Society, May 2004, Strasbourg, France. pp.365, ⟨10.1049/ip-opt:20040867⟩ |
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Micro-photoluminescence of GaN quantum dots embedded in 100 nm wide cylindrical AlN pillarsEuropean Materials Research Society 2004, Symposium L. InN, GaN, AlN and Related Materials, their Heterostructures and Devices., European Materials Research Society, May 2004, Strasbourg, France. pp.783-790, ⟨10.1016/j.spmi.2004.09.034⟩ |
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Photo-induced interband absorption in group-III nitride quantum wellsInternational Conference on Superlattices, Nano-structures and Nano-devices - ICSNN 2002., Jul 2002, Toulouse, France. pp.247-249, ⟨10.1016/S1386-9477(02)00785-3⟩ |
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Coexistence in photoluminescence of free exciton and bound exciton in low nitrogen content GaInNAs layers5th International Conference on Nitride Semiconductors - ICNS 5., May 2003, Nara, Japan. pp.2631, ⟨10.1002/pssc.200303271⟩ |
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Optical properties of GaN/AlN quantum boxes under high photo-excitation5th International Conference on Nitride Semiconductors (ICNS-5), Axel Hoffmann, May 2003, Nara, Japan. pp.2666-2669, ⟨10.1002/pssc.200303270⟩ |
New model of electron-hole pair recombination in (Ga,In)N/GaN low-dimensional systems5th International Conference on Nitride Semiconductors - ICNS 5., May 2003, Nara, Japan |
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Two-dimensional “pseudo-donor–acceptor-pairs” model of recombination dynamics in InGaN/GaN quantum wellsInternational Conference on Superlattices, Nano-structures and Nano-devices - ICSNN 2002., Jul 2002, Toulouse, France. pp.64-67, ⟨10.1016/S1386-9477(02)00762-2⟩ |
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Light-Hole and Heavy-Hole Excitons: the Right Probe for the Physics of Low N Content GaAsNInternational Workshop on Nitride Semiconductors (IWN 2002), Jul 2002, Aix-la-Chapelle, Germany. pp.778-781, ⟨10.1002/1521-3951(200212)234:3<778::AID-PSSB778>3.0.CO;2-H⟩ |
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Croissance de multi-puits quantiques dans le système (Al)GaInAs sur AlGaAsSb accordé sur InPSéminaire National : Epitaxie par Jets Moléculaires, 1997, Saint-Aygulf, France |
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Porous silicon membranes for gas sensors applicationsE-MRS Spring Conf., 1994, Strasbourg, France |
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Positron lifetime spectroscopy of n-type and p-type porous siliconE-MRS Spring Conf., 1994, Strasbourg, France |
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Porous silicon membranes and sensors applicationsEUROSENSORS VIII, 1994, Toulouse, France |
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Acoustic microscopy investigation of porous siliconE-MRS Spring Conf., 1994, Strasbourg, France |
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Elastic characterization of porous silicon by acoustic microscopyICSMM-7, 1994, Banff, Canada |
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Positron annihilation investigation of porous siliconICSMM-7, 1994, Banff, Canada |
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Journées Nano, Micro et Optoélectronique (JNMO)Journées Nano, Micro et Optoélectronique (JNMO) 2024, 2024 |
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0.75–1.1-THz Waveguide-Integrated Amplitude Modulator based on InAs photo-excitation2023 48th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Sep 2023, Montreal, Canada. IEEE, pp.1-2, 2023, ⟨10.1109/IRMMW-THz57677.2023.10299360⟩ |
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Semiconductor plasmonics and metamaterials for IR applicationsSPIE Proceedings, 12002, SPIE, pp.1, 2022, ⟨10.1117/12.2612190⟩ |
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Waveguide-integrated optically-controlled THz modulator47th International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2022, Aug 2022, Delft, Netherlands. IEEE, pp.1-2, 2022, International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz, 978-172819427-1. ⟨10.1109/IRMMW-THz50927.2022.9895784⟩ |
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Harnessing near-field thermal photons with efficient photovoltaic conversion2019 |
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Spin-Exchange Interaction in ZnO-based Quantum Wells2006 |
Infrared near-field nanoscopy study of all-semiconductor plasmonic gratings near plasma frequency15th International Conference on Near-field Optics, Nanophotonics and related Techniques (NFO-15), Aug 2018, Troyes, France |
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Which quasi-particle in wide band gap bulk microcavities?2nd International School on Nanophotonics , Sep 2007, Maratea, Italy. |
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Determination of internal electric field in ZnO/(Zn,Mg)O quantum wells from time resolved photoluminescence experiments28th International Conference on the Physics of Semiconductors - ICPS 28. , Jul 2006, Vienne, Austria. |
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Micro-photoluminescence of isolated hexagonal GaN/AlN quantum dots : role of the electron-hole dipoleWolfgang Jantsch; Friederich Schafler. 28th International Conference on the Physics of Semiconductors - ICPS 28. , Jul 2006, Vienne, Austria. AIP Publishing, AIP Conference Proceedings, 893, pp.941, 2007, PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors - ICPS 2006. ⟨10.1063/1.2730203⟩ |
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Malices et fourberies des boîtes quantiques GaN/AlN.Journées Nationales Micro- et Opto-électronique – Xèmes JNMO., Jun 2004, La Grande Motte, France. |
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Dynamique de recombinaison des porteurs dans des puits quantiques GaInAsN/GaAs.9èmes Journées de la Matière Condensée, Aug 2004, Nancy, France |
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Continuous-wave versus time-resolved photo-luminescence of GaN/AlN quantum dots.Summer School "Semiconductor Quantum Dots: Physics and Devices"., Sep 2004, Ascona, Switzerland |
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Carrier recombination dynamics in GaN/AlN quantum dots.EXMATEC'04 - 7th Int. Conf. on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies., Jun 2004, Montpellier, France |
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Nonlinear optical absorption induced by high photo-excitation of group-III nitride based quantum wells5th International Conference on Nitride Semiconductors - ICNS 5., May 2003, Nara, Japan. |
Response to "Comment on 'Radiative and nonradiative recombination processes in InN films grown by metal organic chemical vapor deposition'" Appl. Phys. Lett. 87, 176101 (2005)2005, pp.87, 176102. ⟨10.1063/1.2117613⟩ |