Yvan Cuminal
Publications
Publications
Design and fabrication of organic solar cells dedicated for a use at high temperatures for application in a hybrid pv-csp systemsJournées Nationales du Photovoltaïque (JNPV) 2025, Nov 2025, Strasbourg, France |
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Design and fabrication of organic solar cells dedicated for a use at high temperatures for application in a hybrid PV-CSP systemsJournées Nationales du Photovoltaïque (JNPV) 2024, Dec 2024, Dourdan, France |
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Modélisation de cellules solaires multijonctions III-Sb réalistesJournées Nationales du Photovoltaïque, Nov 2022, Dourdan, France |
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Insight into the factors affecting the performances of a conventional GaAs solar cell operating at up to 200 °CJournées Nationales du Photovoltaïque 2021, Nov 2021, Dourdan, France |
Characterization and numerical analysis of III-Sb tandem solar cellsJournées Nationales du Photovoltaïque, Dec 2019, Dourdan, France |
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Potential of AlGaAsSb alloys for GaSb-based multi-junction solar cellsForum of Revolutions in Renewable Energy in 21th Century (FOREN-2019), Oct 2019, Rome, Italy |
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Characterization and pseudo-3D modeling of GaSb solar cells for high-concentration photovoltaics36th European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC), Sep 2019, Marseille, France |
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Indoor energy micro-sources for energetically antonomous nomadic devices36th European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC), Sep 2019, Marseille, France |
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Sources d'énergies indoor pour objets communicants énergétiquement autonomesJournées Nationales du Photovoltaïque, Dec 2019, Dourdan, France |
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Etude d’une méthode de caractérisation thermique de couches minces par technique opto-électro-thermique sur données synthétiquesCongrès annuel de la Société Française de Thermique (SFT), May 2018, Pau, France |
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Investigation of GaSb solar cell with an AlGaAsSb window layer for applications as a bottom subcell of 4-junction solar cellsJournées Nationales du Photovoltaïque, Dec 2018, Dourdan, France |
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Investigation of antimonide-based semiconductors for high-efficiency multi-junction solar cells2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC), Jun 2018, Waikoloa Village, France. pp.0937-0942 |
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Développement et optimisation d'une méthode de caractérisation thermique de couches minces par technique électrothermique sur données synthétiquesCongrès annuel de la Société Française de Thermique (SFT), May 2017, Marseille, France |
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Impact de la résistance série sous forte concentration solaire dans le cas de cellules antimoniuresJournées Nationales du PhotoVoltaïque, Dec 2016, Dourdan, France |
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Interest of Antimonide Compounds Based Multijunction Cells for High Concentrating Photovoltaics20th Sede Boqer Symposium on Solar Electricity Production, Sep 2016, Sede Boqer, Israel |
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Solar cells based on GaAs: Thermal behavior study11TH INTERNATIONAL CONFERENCE ON CONCENTRATOR PHOTOVOLTAIC SYSTEMS: CPV-11, 2016, Aix-les-Bains, France. pp.020002, ⟨10.1063/1.4931502⟩ |
Contacts ohmiques pour cellules solaires à base de matériaux antimoniures dans le cadre d'applications aux fortes concentrations solairesJournées Nationales sur l'Energie Solaire, Jun 2016, Perpignan, France |
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Multi-junctions PV concentrator solar cells, state of the art. Interest of antimonide compoundsEMRS Spring meeting, 2015, Lille, France |
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Structures à base de matériaux antimoniures pour la conversion de l’énergie solaire concentrée4ème JNPV, 2014, Dourdan, France |
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Homogeneous High Ohmic Phosphorus Doping for Advanced Solar Cell Manufacturing Using Reduced Pressure Diffusion Techniques28th European Photovoltaic Solar Energy Conference and Exhibition, 2013, Montpellier, France |
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Plasma Texturing for Solar Cell: Study on Hybrid Mono-Like and on Traditional Multicrystalline Wafers28th European Photovoltaic Solar Energy Conference and Exhibition, 2013, Paris, France |
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Improvement of Performance of Crystalline Silicon Solar Cells by the Use of Dry Polishing28th European Photovoltaic Solar Energy Conference and Exhibition, 2013, Paris, France. ⟨10.4229/28thEUPVSEC2013-2DV.3.9⟩ |
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Efficiency limit of AlGaAs solar cell modified by AlGaSb quantum dot intermediate band embedded outside the depletion region24th EUPVSEC, 2012, Frankfurt, Germany |
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CHARACTERIZATION OF GaSb SOLAR CELLS STRUCTURES UNDER HIGH SOLAR CONCENTRATIONSProceedings of International Conference Nanomeeting – 2011, 2011, Minsk, Belarus. ⟨10.1142/9789814343909_0135⟩ |
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Numerical Model of Transport in Microcrystalline Silicon FilmsInternational Conference on Amorphous and Nanocrystalline Semiconductors (ICANS 24), 2011, Tokyo, Japan |
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Deep Levels induced by a negative bias stress applied on commercial VDMOSFET transistorAbstracts of the Materials Research Society spring meeting (MRS), 2011, San Francisco, United States |
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Modelling of the boron diffusion from BCl3 process: Application for N-type crystalline silicon solar cellsCIMA, Beyrouth, 2011, Beyrouth, Lebanon |
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GaSb solar cells structures under high solar concentrationInternational Conference Nanomeeting 2011, 2011, Minsk, Belarus |
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Process description approach for n-type multicrystalline silicon solar cells fabrication26th European Photovoltaic Solar Energy Conference, 2010, Valencia, Spain |
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GaSb based solar cells designed for high solar concentrationThin films 2010 International Conference, 2010, Aix en Provence, France |
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Effect of pressure on electrical properties of short period InAs/GaSb superlattice13th International Conference on High Pressure Semiconductor Physics (HPSP-13), Jul 2008, Fortaleza (BRAZIL), France. pp.643-647 |
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Optical gain calculation of dilute Nitride InAsN/GaSb laser diodes operating in the mid-infraredEMRS Int. Conference, 2009, Strasbourg, France |
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THEORETICAL COMPARISON OF DILUTE-NITRIDE "W" AND "M" InAsN / GaSb MID-INFRARED LASER DIODESProceedings of the International Conference on Nanomeeting 2009, May 2009, Minsk, Belarus. ⟨10.1142/9789814280365_0141⟩ |
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New chemical etching procedures of antimonide-based materials for infrared detectors2d International Meeting on Materials for Electronic Applications, 2009, Hammamet, Tunisia |
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VSpectral characteristics of the photosensitive and light emitting short-period superlattices in the InAs-GaSb systemWorkshop “Frontiers of nanoscale spintronics and photovoltaic", 2009, Marseille, France |
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Surface treatments of Sb-based photodetectorsMADICA 2008, 2008, Rabat, Morocco |
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Improvement material performances of InAs/GaSb superlattice photodiodesEXMATEC, Jun 2008, Łódź, Poland |
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Improvement performances of InAs/GaSb superlattice photodiodeEXMATEC'08, 2008, Lodz, Poland |
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Dilute-Nitride "W" and "M" InAsN/GaSb laser diodes for gaz analysis in the mid-infrared domainMADICA 2008, 2008, Rabat, Morocco |
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Surface passivation of GaInAsSb photodiode with thioacetamideWILEY-VCH Verlag GmbH & Co. KGaA, Jan 2007, Wenheim, France. 4 p |
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Electrical and optical properties of InAs/InSb/GaSb superlattices for mid-infrared applications.14th International Symposium nanostrucutres : Physics and Technology., Jun 2006, St Petersbourg., Russia |
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Photodétecteurs infrarouges non redroidis à superréseaux InAs/GaSb : modélisation et caractérisation optique.11eme Journées Nano-Micro Electronique et Optoélectronique, Apr 2006, Aussois, France |
Nitride-based quantum-well lasers on InAs substrate for midwave-infrared emission.14th International Symposium on Nanostructures: Physics and Technology, NANO 2006, 2006, Saint-Petersbourg, Russia. pp.338-339 |
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Multiphysic FEMLAB modelling to evaluate mid-infrared photonic detector performancesNov 2005, pp.109-112 |
Improvement of Sb-based multiquantum well lasers by Coulomb enhancementSemiconductor and Integrated Optoelectronics Conference (SIOE), 1998, Cardiff, United Kingdom. pp.3 - 8, ⟨10.1049/ip-opt:19990456⟩ |
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GaInAsSb/GaSb multiple quantum well lasers for tunable diode laser spectroscopy between 2 and 2.65 µm2nd International Conference on Tunable Diode Laser Spectroscopy (TDLS), 1998, Moscow, Russia |
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Room Temperature Mid-Infrared Quantum Well Lasers for Gas AnalysisMaterials Research Society Fall Meeting (MRS), 1998, Boston, United States |
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Room temperature GaInAsSb/GaSb Quantum Well Laser for Tunable Diode Laser Absorption Spectroscopy around 2.35 µmMid-Infrared Optoelectronics and Devices, 1998, Prague, Czech Republic |
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Gas analysis using diode lasers near 2.35 µmMiddle Infrared (2-15 µm) Coherent Sources (MICS), 1998, Cargese, France |
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Edge and Surface Emitting Sb-based Mid-Infrared Type II Quantum Well lasersXth International MBE Congress, 1998, Cannes, France |
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Novel Sb-based mid-infrared laser structures designed by wave function engineeringMid-Infrared Optoelectronics and Devices, 1998, Prague, Czech Republic |
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Low-threshold continuous-wave operation of 2.38 µm GaInAsSb/GaSb type-II quantum-well laser diodesIEEE 16th International Semiconductor Laser Conference (ISLC), 1998, Nara, Japan |
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Mid-infrared GaSb-InAs-based multiple quantum well lasersOptoelectronics and High-Power Lasers & Applications, 1998, San Jose, United States. ⟨10.1117/12.304451⟩ |
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Edge and surface emitting mid-infrared quantum well lasers for gas analysisMid-Infrared Optoelectronics and Devices, 1998, Prague, Czech Republic |
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The importance of the induced electrostatic confinement in the design of type II mid-infrared lasersSemiconductor and Integrated Opto-electronics conference (SIOE), 1998, Cardiff, United Kingdom |
Fabrication, characterization and modeling of III-Sb based multijunction solar cellsLes Houches School of Physics - Physics of solar cells: from basic principles to material science, Apr 2022, Les Houches, France |
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Analysis of the performances of a conventional GaAs solar cell operating at up to 200 °CJournées Nationales du Photovoltaïque 2020, Jan 2021, En ligne, France |
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Caractérisation et modélisation d’une cellule tandem AlGaAsSb/GaSbJournées Nationales du Photovoltaïque, Nov 2021, Dourdan, France |
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Physics of GaAs solar cells operating under thermal stressLes Houches School of Physics - Physics of Solar Cells: from basic principles to advanced characterization, Mar 2020, Les Houches, France |
Multiple-junction photovoltaic cell based on antimonide materialsUnited States, Patent n° : US Patent App. 15/312,570, 2017. 2017 |