
Alexandre Giry
- Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI)
- Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI)
- Département Systèmes (DSYS)
Présentation
Alexandre Giry (CEA) received the Ph.D. degree (cum Laude) in Electrical Engineering from Université Grenoble Alpes (UGA), France. He is currently with CEA-Leti as a research scientist and principal investigator, leading research activities on RF Power IC/MMIC design in Silicon and GaN technologies. He has 20+ years of hands-on experience in RF PA/FEM architecture and design and he has supervised several PhD students and researchers. He has participated in multiple research programs and industrial transfers at national and international levels. His current research interests include RF PA/FEM design and integration in CMOS/BiCMOS/GaN/InP technologies, high-efficiency multimode multiband PA architectures, reconfigurable and mismatch-resilient RF Front-Ends architectures, power management design for high-efficiency PA, advanced packaging and heterogeneous integration solutions for high performance RF/mmW modules. A. Giry is a Technical Program Committee Member of the IEEE Radio Frequency Integrated Circuits (RFIC) Conference. He was co-recipient of the Best Industry Paper Award - Second Place of the 2020 IEEE RFIC Symposium and the Best Industry Paper Award Finalist of the 2021 and 2022 IEEE RFIC Symposium.
Domaines de recherche
Compétences
Publications
Publications
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Bandwidth and efficiency improvement in sequential load modulated balanced amplifiersEuMC 2024 - 54th European Microwave Conference, Sep 2024, Paris, France. pp.35-38, ⟨10.23919/EuMC61614.2024.10732338⟩
Communication dans un congrès
cea-04828972
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Extension of Quasi-Load Insensitive Class-E Doherty Operation with Complex Load Trajectories19th Conference on Ph.D Research in Microelectronics and Electronics (PRIME 2024), Jun 2024, Larnaca, Cyprus. ⟨10.1109/PRIME61930.2024.10559702⟩
Communication dans un congrès
hal-04634025
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Recent Progress on SOI CMOS Power Amplifiers for Mobile and WiFi ApplicationsESSCIRC-ESSDERC'23, Sep 2023, Lisbonne, Portugal. pp.103-114
Communication dans un congrès
cea-04303336
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Sub-6GHz SOI-CMOS High-Efficiency Linear PA Architectures: Challenges, Technics and OpportunitiesAPMC, Dec 2023, Taipei, Taiwan
Communication dans un congrès
cea-04806088
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6.6W/mm 200mm CMOS compatible AlN/GaN/Si MIS-HEMT with in-situ SiN gate dielectric and low temperature ohmic contactsIEDM 2023 - IEEE International Electron Devices Meeting, Dec 2023, San Francisco, United States. ⟨10.1109/IEDM45741.2023.10413676⟩
Communication dans un congrès
cea-04539880
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Analysis and design of wideband sequential load modulated balanced amplifier for 5G applicationsMWSCAS 2023 - 66th IEEE International Midwest Symposium on Circuits and Systems, Aug 2023, Phoenix, United States
Communication dans un congrès
cea-04260821
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A cost effective RF-SOI Drain Extended MOS transistor featuring PSAT=19dBm @28GHz & VDD=3V for 5G Power Amplifier applicationIEDM 2023, Dec 2023, SAN FRANCISCO, United States. ⟨10.1109/IEDM45741.2023.10413696⟩
Communication dans un congrès
cea-04524927
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A high-power SOI-CMOS PA module with Fan-Out Wafer-Level Packaging for 2.4 GHz Wi-Fi 6 applicationsRFIC 2021 - IEEE Radio Frequency Integrated Circuits Symposium, Jun 2021, Atlanta, United States. pp.59-62, ⟨10.1109/RFIC51843.2021.9490483⟩
Communication dans un congrès
hal-04827475
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A Reconfigurable SOI CMOS Doherty Power Amplifier Module for Broadband LTE High-Power User Equipment Applications2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), Aug 2020, Los Angeles, France. pp.79-82, ⟨10.1109/RFIC49505.2020.9218305⟩
Communication dans un congrès
hal-04412828
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A Very Robust and Reliable 2.7GHz +31dBm Si RFSOI Transistor for Power Amplifier Solutions2019 IEEE International Electron Devices Meeting (IEDM), Dec 2019, San Francisco, United States. pp.25.5.1-25.5.4, ⟨10.1109/IEDM19573.2019.8993649⟩
Communication dans un congrès
cea-04778207
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A 2.5GHz LTE Doherty Power Amplifier in SOI-CMOS Technology2019 17th IEEE International New Circuits and Systems Conference (NEWCAS), Jun 2019, Munich, Germany. pp.1-4, ⟨10.1109/NEWCAS44328.2019.8961306⟩
Communication dans un congrès
cea-04779509
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Highly Compact RF Transceiver Module Using High Resistive Silicon Interposer with Embedded Inductors and Heterogeneous Dies Integration2019 IEEE 69th Electronic Components and Technology Conference (ECTC), May 2019, Las Vegas, United States. pp.1279-1286, ⟨10.1109/ECTC.2019.00198⟩
Communication dans un congrès
cea-04785806
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A Broadband High-Efficiency SOI-CMOS PA Module for LTE/LTE-A Handset Applications2019 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), Jun 2019, Boston, United States. pp.299-302, ⟨10.1109/RFIC.2019.8701727⟩
Communication dans un congrès
cea-04794036
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New Analytical Boundary Condition for Optimized Outphasing PA DesignIEEE International New Circuits and Systems Conference (NEWCAS), Jun 2019, Munich, Germany. pp.1-4, ⟨10.1109/NEWCAS44328.2019.8961239⟩
Communication dans un congrès
hal-02296297
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Étude et Dimensionnement d’un Amplificateur de Puissance de Type OutphasingJournées Nationales Microondes (JNM), May 2019, Caen, France
Communication dans un congrès
hal-02296308
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A 3.2–3.6GHz SOI-LDMOS Dual-Input Doherty Power AmplifierIEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S 2019), Oct 2019, San Jose (CA), United States. ⟨10.1109/S3S46989.2019.9320747⟩
Communication dans un congrès
hal-04911387
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Frequency Reconfigurable Dual Narrow Band Antenna matched on the Low Band LTE FDD Physical Layer12th European Conference on Antennas and Propagation (EuCAP 2018), Apr 2018, London, United Kingdom. ⟨10.1049/cp.2018.0891⟩
Communication dans un congrès
hal-01979434
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Output matching network design for broadband class B/J power amplifier2017 13th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), Jun 2017, Giardini Naxos - Taormina, Italy. pp.41-44
Communication dans un congrès
hal-02012859
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Réseau d'adaptation pour amplificateur de puissance large bande en classe B/J continueGDR ONDES, Mar 2017, Grenoble, France
Communication dans un congrès
hal-02021513
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A 130-nm SOI CMOS reconfigurable multimode multiband power amplifier for 2G/3G/4G handset applications2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), May 2016, San Francisco, United States. pp.254-257
Communication dans un congrès
hal-02012869
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Un Amplificateur de Puissance Multimode Multibande reconfigurable en technologie CMOS SOI19èmes Journées Nationales Micro-ondes, Jun 2015, Bordeaux, France
Communication dans un congrès
hal-02021516
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A SOI CMOS reconfigurable output matching network for multimode multiband power amplifiers2015 IEEE MTT-S International Microwave Symposium (IMS2015), May 2015, Phoenix, United States. pp.1-4
Communication dans un congrès
hal-02015026
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Un réseau d'adaptation reconfigurable en technologie CMOS SOI pour amplificateur de puissance multimode multi-bandes19èmes Journées Nationales Micro-ondes, Jun 2015, Bordeaux, France
Communication dans un congrès
hal-02022292
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Amplificateur de puissance à réseau de charge accordable en technologie SOI CMOS pour station de base Femtocell 4G18èmes journées nationales micro-ondes, May 2013, Paris, France. pp.JNM'13
Communication dans un congrès
hal-01020778
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A 2.14GHz Watt-level Power Amplifier with Passive Load Modulation in a SOI CMOS technologyEuropean Solid-State Circuits Conference (ESSCIRC), Sep 2013, Bucarest, Romania. pp.1-4
Communication dans un congrès
hal-00997120
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Enhanced-efficiency front-end module with multi-standard impedance-tunable antenna2012 IEEE 17th International Workshop on Computer Aided Modeling and Design of Communication Links and Networks (CAMAD), Sep 2012, Barcelona, Spain. pp.328-332, ⟨10.1109/CAMAD.2012.6335361⟩
Communication dans un congrès
hal-02428451
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Nonlinear behavior of CRF device at high power levelIEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems 2009, Jan 2009, San Diego, United States. pp.978-1-4244-2831-1, ⟨10.1109/SMIC.2009.4770504⟩
Communication dans un congrès
hal-00437388
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The locus of points of constant output VSWR around the load optimal impedance: evaluation of power transistors robustness2nd Conference on Ph. D Research in MicroElectronics and Electronics (PRIME), Jun 2006, Otranto, Italy. pp.45-48
Communication dans un congrès
hal-00660601
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Linearity measurements of Si/SiGe HBT using a large signal network analyzer and an harmonic load-pull setupEuropean Microwave Week, Sep 2006, Manchester, United Kingdom. pp. 259-262, ⟨10.1109/EUMC.2006.281287⟩
Communication dans un congrès
hal-00660614
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LDMOSFET and SiGeC HBT integrated in a 0.25um BiCMOS technology for RF-PA applicationsBCTM, 2004, Unknown, Unknown Region
Communication dans un congrès
hal-01279420
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A Linear High-Power Reconfigurable SOI-CMOS Front-End Module for WI-FI 6/6E ApplicationsIEEE RFIC, 2022, 2022 (June), pp.39-42. ⟨10.1109/RFIC54546.2022.9863085⟩
Article dans une revue
cea-04176696
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A Novel Approach for Doherty PA Design using a Compact L-C CombinerIEEE Transactions on Circuits and Systems II: Express Briefs, 2022, pp.5. ⟨10.1109/TCSII.2022.3185174⟩
Article dans une revue
hal-03765642
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A 433-MHz SOI CMOS Automatic Impedance Matching CircuitIEEE Transactions on Circuits and Systems II: Express Briefs, 2019, 66 (6), pp.958-962. ⟨10.1109/TCSII.2018.2834158⟩
Article dans une revue
cea-04800081
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High Performance 15-V Novel LDMOS Transistor Architecture in a 0.25µm BiCMOS Process for RF Power Applications.IEEE Transactions on Electron Devices, 2007, 54, pp.861 - 868
Article dans une revue
hal-00198576
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