Alexandre Giry

Ingénieur Chercheur
18%
Libre accès
34
Documents
Affiliations actuelles
  • Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI)
  • Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI)
  • Département Systèmes (DSYS)
Identifiants chercheurs

Présentation

Alexandre Giry (CEA) received the Ph.D. degree (cum Laude) in Electrical Engineering from Université Grenoble Alpes (UGA), France. He is currently with CEA-Leti as a research scientist and principal investigator, leading research activities on RF Power IC/MMIC design in Silicon and GaN technologies. He has 20+ years of hands-on experience in RF PA/FEM architecture and design and he has supervised several PhD students and researchers. He has participated in multiple research programs and industrial transfers at national and international levels. His current research interests include RF PA/FEM design and integration in CMOS/BiCMOS/GaN/InP technologies, high-efficiency multimode multiband PA architectures, reconfigurable and mismatch-resilient RF Front-Ends architectures, power management design for high-efficiency PA, advanced packaging and heterogeneous integration solutions for high performance RF/mmW modules. A. Giry is a Technical Program Committee Member of the IEEE Radio Frequency Integrated Circuits (RFIC) Conference. He was co-recipient of the Best Industry Paper Award - Second Place of the 2020 IEEE RFIC Symposium and the Best Industry Paper Award Finalist of the 2021 and 2022 IEEE RFIC Symposium.

Domaines de recherche

Micro et nanotechnologies/Microélectronique Electronique

Compétences

RF Radiofrequency Power Amplifier mmW Front-End Module

Publications

13
8
7
3
3
4
3
3
2
2
2
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
13
10
7
5
4
4
4
4
4
4
3
3
3
3
3
3
3
3
3
3
3
3
3
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
2
1
1
2
5
2
1
3
6
1
2
1
3
2
1
1
1
2
1
1
2
16
11
3
1

Publications

Image document

Bandwidth and efficiency improvement in sequential load modulated balanced amplifiers

Mohammad Moussa , Ayssar Serhan , Pascal Reynier , Dominique Morche , Alexandre Giry
EuMC 2024 - 54th European Microwave Conference, Sep 2024, Paris, France. pp.35-38, ⟨10.23919/EuMC61614.2024.10732338⟩
Communication dans un congrès cea-04828972 v1

Extension of Quasi-Load Insensitive Class-E Doherty Operation with Complex Load Trajectories

Mehdi Otmani , Ayssar Serhan , Jean-Daniel Arnould , Estelle Lauga-Larroze , Alexandre Giry
19th Conference on Ph.D Research in Microelectronics and Electronics (PRIME 2024), Jun 2024, Larnaca, Cyprus. ⟨10.1109/PRIME61930.2024.10559702⟩
Communication dans un congrès hal-04634025 v1

Recent Progress on SOI CMOS Power Amplifiers for Mobile and WiFi Applications

Alexandre Giry , Ayssar Serhan , Ali Alshakoush , Pascal Reynier
ESSCIRC-ESSDERC'23, Sep 2023, Lisbonne, Portugal. pp.103-114
Communication dans un congrès cea-04303336 v1

Sub-6GHz SOI-CMOS High-Efficiency Linear PA Architectures: Challenges, Technics and Opportunities

Ayssar Serhan , Alexandre Giry , Pascal Reynier
APMC, Dec 2023, Taipei, Taiwan
Communication dans un congrès cea-04806088 v1
Image document

6.6W/mm 200mm CMOS compatible AlN/GaN/Si MIS-HEMT with in-situ SiN gate dielectric and low temperature ohmic contacts

Erwan Morvan , Yveline Gobil , Fanny Morisot , Jérôme Biscarrat , Matthew Charles et al.
IEDM 2023 - IEEE International Electron Devices Meeting, Dec 2023, San Francisco, United States. ⟨10.1109/IEDM45741.2023.10413676⟩
Communication dans un congrès cea-04539880 v1
Image document

Analysis and design of wideband sequential load modulated balanced amplifier for 5G applications

Mohammad Moussa , Ayssar Serhan , Pascal Reynier , Dominique Morche , Alexandre Giry
MWSCAS 2023 - 66th IEEE International Midwest Symposium on Circuits and Systems, Aug 2023, Phoenix, United States
Communication dans un congrès cea-04260821 v1

A cost effective RF-SOI Drain Extended MOS transistor featuring PSAT=19dBm @28GHz & VDD=3V for 5G Power Amplifier application

Xavier Garros , Alexis Divay , Joris Lacord , Ayssar Serhan , Thibaud Fache et al.
IEDM 2023, Dec 2023, SAN FRANCISCO, United States. ⟨10.1109/IEDM45741.2023.10413696⟩
Communication dans un congrès cea-04524927 v1

A high-power SOI-CMOS PA module with Fan-Out Wafer-Level Packaging for 2.4 GHz Wi-Fi 6 applications

P. Reynier , A. Serhan , D. Parat , R. Mourot , M. Gaye et al.
RFIC 2021 - IEEE Radio Frequency Integrated Circuits Symposium, Jun 2021, Atlanta, United States. pp.59-62, ⟨10.1109/RFIC51843.2021.9490483⟩
Communication dans un congrès hal-04827475 v1

A Reconfigurable SOI CMOS Doherty Power Amplifier Module for Broadband LTE High-Power User Equipment Applications

A. Serhan , D. Parat , P. Reynier , M. Pezzin , R. Mourot et al.
2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), Aug 2020, Los Angeles, France. pp.79-82, ⟨10.1109/RFIC49505.2020.9218305⟩
Communication dans un congrès hal-04412828 v1

A Very Robust and Reliable 2.7GHz +31dBm Si RFSOI Transistor for Power Amplifier Solutions

X. Garros , F. Cacho , E. Vincent , E. Granger , F. Gaillard et al.
2019 IEEE International Electron Devices Meeting (IEDM), Dec 2019, San Francisco, United States. pp.25.5.1-25.5.4, ⟨10.1109/IEDM19573.2019.8993649⟩
Communication dans un congrès cea-04778207 v1

A 2.5GHz LTE Doherty Power Amplifier in SOI-CMOS Technology

A. Giry , E. Mercier , A. Serhan , D. Parat , P. Reynier et al.
2019 17th IEEE International New Circuits and Systems Conference (NEWCAS), Jun 2019, Munich, Germany. pp.1-4, ⟨10.1109/NEWCAS44328.2019.8961306⟩
Communication dans un congrès cea-04779509 v1

Highly Compact RF Transceiver Module Using High Resistive Silicon Interposer with Embedded Inductors and Heterogeneous Dies Integration

G. Pares , Michel Jean-Philippe , Deschaseaux Edouard , Ferris Pierre , Serhan Ayssar et al.
2019 IEEE 69th Electronic Components and Technology Conference (ECTC), May 2019, Las Vegas, United States. pp.1279-1286, ⟨10.1109/ECTC.2019.00198⟩
Communication dans un congrès cea-04785806 v1

A Broadband High-Efficiency SOI-CMOS PA Module for LTE/LTE-A Handset Applications

A. Serhan , D. Parat , P. Reynier , R. Berro , R. Mourot et al.
2019 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), Jun 2019, Boston, United States. pp.299-302, ⟨10.1109/RFIC.2019.8701727⟩
Communication dans un congrès cea-04794036 v1

New Analytical Boundary Condition for Optimized Outphasing PA Design

Joe Bachi , Ayssar Serhan , Dang-Kièn Germain Pham , Patricia Desgreys , Alexandre Giry
IEEE International New Circuits and Systems Conference (NEWCAS), Jun 2019, Munich, Germany. pp.1-4, ⟨10.1109/NEWCAS44328.2019.8961239⟩
Communication dans un congrès hal-02296297 v1
Image document

Étude et Dimensionnement d’un Amplificateur de Puissance de Type Outphasing

Joe Bachi , Ayssar Serhan , Dang-Kièn Germain Pham , Patricia Desgreys , Alexandre Giry
Journées Nationales Microondes (JNM), May 2019, Caen, France
Communication dans un congrès hal-02296308 v1

A 3.2–3.6GHz SOI-LDMOS Dual-Input Doherty Power Amplifier

Saad Boutayeb , Ayssar Serhan , Pascal Reynier , Damien Parat , Alexis Divay et al.
IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S 2019), Oct 2019, San Jose (CA), United States. ⟨10.1109/S3S46989.2019.9320747⟩
Communication dans un congrès hal-04911387 v1
Image document

Frequency Reconfigurable Dual Narrow Band Antenna matched on the Low Band LTE FDD Physical Layer

Serge Bories , François Sarrazin , Alexandre Giry
12th European Conference on Antennas and Propagation (EuCAP 2018), Apr 2018, London, United Kingdom. ⟨10.1049/cp.2018.0891⟩
Communication dans un congrès hal-01979434 v1

Output matching network design for broadband class B/J power amplifier

Saad Boutayeb , Alexandre Giry , Ayssar Serhan , Jean-Daniel Arnould , Estelle Lauga-Larroze
2017 13th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), Jun 2017, Giardini Naxos - Taormina, Italy. pp.41-44
Communication dans un congrès hal-02012859 v1

Réseau d'adaptation pour amplificateur de puissance large bande en classe B/J continue

Saad Boutayeb , Alexandre Giry , Ayssar Serhan , Jean-Daniel Arnould , Estelle Lauga-Larroze
GDR ONDES, Mar 2017, Grenoble, France
Communication dans un congrès hal-02021513 v1

A 130-nm SOI CMOS reconfigurable multimode multiband power amplifier for 2G/3G/4G handset applications

Pierre Ferris , Gauthier Tant , Alexandre Giry , Jean-Daniel Arnould , J.-M. Fournier
2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), May 2016, San Francisco, United States. pp.254-257
Communication dans un congrès hal-02012869 v1

Un Amplificateur de Puissance Multimode Multibande reconfigurable en technologie CMOS SOI

Pierre Ferris , G. Tant , D. Parat , Alexandre Giry , Jean-Daniel Arnould et al.
19èmes Journées Nationales Micro-ondes, Jun 2015, Bordeaux, France
Communication dans un congrès hal-02021516 v1

A SOI CMOS reconfigurable output matching network for multimode multiband power amplifiers

G. Tant , A. Giry , P. Ferris , G. Pares , Jean-Daniel Arnould et al.
2015 IEEE MTT-S International Microwave Symposium (IMS2015), May 2015, Phoenix, United States. pp.1-4
Communication dans un congrès hal-02015026 v1

Un réseau d'adaptation reconfigurable en technologie CMOS SOI pour amplificateur de puissance multimode multi-bandes

Gauthier Tant , Pierre Ferris , Alexandre Giry , Jean-Daniel Arnould , Jean-Michel Fournier et al.
19èmes Journées Nationales Micro-ondes, Jun 2015, Bordeaux, France
Communication dans un congrès hal-02022292 v1

Amplificateur de puissance à réseau de charge accordable en technologie SOI CMOS pour station de base Femtocell 4G

G. Tant , A. Giry , Jean-Daniel Arnould , J.-M. Fournier , P. Vincent
18èmes journées nationales micro-ondes, May 2013, Paris, France. pp.JNM'13
Communication dans un congrès hal-01020778 v1

A 2.14GHz Watt-level Power Amplifier with Passive Load Modulation in a SOI CMOS technology

G. Tant , A. Giry , P. Vincent , Jean-Daniel Arnould , J.-M. Fournier
European Solid-State Circuits Conference (ESSCIRC), Sep 2013, Bucarest, Romania. pp.1-4
Communication dans un congrès hal-00997120 v1

Enhanced-efficiency front-end module with multi-standard impedance-tunable antenna

Constant Niamien , L. Dussopt , M.A.C. Niamien , A. Giry , A. Chebihi et al.
2012 IEEE 17th International Workshop on Computer Aided Modeling and Design of Communication Links and Networks (CAMAD), Sep 2012, Barcelona, Spain. pp.328-332, ⟨10.1109/CAMAD.2012.6335361⟩
Communication dans un congrès hal-02428451 v1

Nonlinear behavior of CRF device at high power level

Loïc Mourot , Pierre Bar , A. Giry , G. Parat , Stéphane Bila et al.
IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems 2009, Jan 2009, San Diego, United States. pp.978-1-4244-2831-1, ⟨10.1109/SMIC.2009.4770504⟩
Communication dans un congrès hal-00437388 v1

The locus of points of constant output VSWR around the load optimal impedance: evaluation of power transistors robustness

F. Blanchet , D. Pache , A. Giry , Mohamed El Yaagoubi , Denis Barataud et al.
2nd Conference on Ph. D Research in MicroElectronics and Electronics (PRIME), Jun 2006, Otranto, Italy. pp.45-48
Communication dans un congrès hal-00660601 v1

Linearity measurements of Si/SiGe HBT using a large signal network analyzer and an harmonic load-pull setup

F. Blanchet , Mohamed El Yaagoubi , Denis Barataud , Jean-Michel Nebus , Denis Pache et al.
European Microwave Week, Sep 2006, Manchester, United Kingdom. pp. 259-262, ⟨10.1109/EUMC.2006.281287⟩
Communication dans un congrès hal-00660614 v1

LDMOSFET and SiGeC HBT integrated in a 0.25um BiCMOS technology for RF-PA applications

Dorothée Muller , Alexandre Giry , Caroline Arnaud , C Arricastres , Raphaël Sommet et al.
BCTM, 2004, Unknown, Unknown Region
Communication dans un congrès hal-01279420 v1