
Antoine Létoublon
235
Documents
Présentation
Specialist in X-ray scattering on epitaxial thin films. Antiphase boundaries and Microtwins quantitative measurements in III-V on Si materials. X-ray labsetup and synchrotron radiation...
Publications
Publications
GaP WGM microdisks for second order nonlinear optics2024 24th International Conference on Transparent Optical Networks (ICTON), Jul 2024, Bari, Italy. pp.1-1, ⟨10.1109/icton62926.2024.10647803⟩
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hal-04688508
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Caractérisation de couches minces de ZnS et design de guides d'ondes en ZnS pour la photonique non linéaireJournée nationale de l'optique guidée, Jul 2023, Lyon, France
Communication dans un congrès
hal-04197066
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Unusual anharmonicity and hierarchy of relaxational dynamics in 3D hybrid halide perovskitesEMRS Fall Meeting 2023, Sep 2023, Varsovie, Poland
Communication dans un congrès
hal-04227095
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Pseudospin-phonon dynamics in lead halide hybrid perovskitesNanoge HPATOM2, Feb 2022, online, France
Communication dans un congrès
hal-03562709
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Tunable bandgap III-V alloys on a low-cost Si substrate for solar-assisted water splittingInternational Workshop on Emerging Solar Energy Materials and Applications (ESEMA 2022), May 2022, Porquerolles, France
Communication dans un congrès
hal-03968129
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Low-frequency lattice dynamics in lead halide hybrid perovskitesJournées de la diffusion neutronique (JDN), Nov 2022, Grenoble (E-meeting), France
Communication dans un congrès
hal-04866530
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Epitaxial growth of Cu(In,Ga)S2 thin films on GaP/Si(001) pseudo-substrate: towards Cu(In,Ga)S2/Si tandem solar cells12è Journées Nationales du PhotoVoltaïque (JNPV 2022), Nov 2022, Dourdan, France
Communication dans un congrès
hal-03968298
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ANR EPCIS: first results on High-Efficiency Epitaxial CIGSu on Silicon Tandem Solar Cell12è Journées Nationales du PhotoVoltaïque (JNPV 2022), Nov 2022, Dourdan, France
Communication dans un congrès
hal-03968258
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MBE-grown GaAs on a low-cost Si substrate for solar hydrogen productionEMRS Fall Meeting 2022, European Materials Research Society, Sep 2022, Warsaw, Poland
Communication dans un congrès
hal-03967984
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Lattice dynamics in 3D lead halide hybrid perovskitesElectron and phonon dynamics in soft optoelectronic materials, Technical University of Munich - Institute for Advanced Study, Sep 2022, Munich, Germany
Communication dans un congrès
hal-03948056
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Unusual anharmonicity and pseudospin-phonon dynamics in 3D halide perovskitesInternational Conference on Emerging Light Emitting Materials (EMLEM 2022), Oct 2022, Limassol, Cyprus
Communication dans un congrès
hal-03949021
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CIGS growth on a GaP/Si(001) platform: towards CIGS/Si tandem solar cellsSPIE Photonics West - OPTO 2021, Mar 2021, Online Only, United States. pp.1168721, ⟨10.1117/12.2591986⟩
Communication dans un congrès
hal-03392186
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Optical losses in GaP microdisks on Si with controlled random polarity17è Journées de la Matière Condensée (JMC 17), Aug 2021, Rennes (virtual), France
Communication dans un congrès
hal-03402730
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Importance of lattice softness and phonon anharmonicity for the optoelectronic properties of 3D, 2D and 0D halide perovskitesJournées de la diffusion neutronique, Sep 2021, Grenoble, France
Communication dans un congrès
hal-03366819
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High-Quality Factor Zinc-Blende III-V Microdisks on Silicon for Nonlinear PhotonicsCompound Semiconductor Week 2021 (CSW 2021), May 2021, Stockholm, France
Communication dans un congrès
hal-03285528
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Is a substrate miscut really required for high quality III-V/Si monolithic integration?21st International Conference on Molecular Beam Epitaxy (ICMBE 2021), Sep 2021, Mexico (virtual), Mexico
Communication dans un congrès
hal-03402689
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Optical and structural characterization of thin MoS2 layers on SiO2/Si substrates, towards the development of MoS2/Si heterojunction photovoltaics.44th International Semiconductor Conference (CAS 2021), Oct 2021, Online, Romania. ⟨10.1109/CAS52836.2021.9604140⟩
Communication dans un congrès
hal-03796793
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Crystal-polarity engineered gallium phosphide microdisks grown on siliconIOP conference- PHOTON2020, Sep 2020, virtual, United Kingdom
Communication dans un congrès
hal-03032794
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CIGS growth on a GaP/Si(001) platform : towards CIGS/Si tandem solar cellsSPIE Photonics West - OPTO 2020, Feb 2020, San Francisco, United States. pp.11275-4
Communication dans un congrès
hal-02879656
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GaPSb/Si tandem material with APBs for efficient overall water splittingJournées Nanomatériaux de Rennes, Jan 2020, Rennes, France
Communication dans un congrès
hal-03032905
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Universal growth mechanism of III-V/Si: using antiphase boundaries for devices.Réunion plénière du GDR Pulse (PULSE 2019), Jul 2019, Clermont-Ferrand, France
Communication dans un congrès
hal-02189095
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Studies on Si/CIGS Epitaxial Tandem Solar CellsE-MRS 2019 Spring Meeting, symposium D: Advances in silicon-nanoelectronics, -nanostructures and high-efficiency Si-photovoltaics, May 2019, Nice, France
Communication dans un congrès
hal-04396608
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III-V/Si photoelectrodes: a new route for solar hydrogen production11è Journées Scientifiques de Porquerolles (JSP2019), C'Nano-PACA, Sep 2019, Porquerolles, France
Communication dans un congrès
hal-02305423
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A universal mechanism to describe III-V epitaxy on Si20th European Molecular Beam Epitaxy Workshop (Euro-MBE 2019), Feb 2019, Lenggries, Germany
Communication dans un congrès
hal-02048639
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GaPSb/Si photoelectrode for Solar Fuel ProductionEuropean COST multsicaleSolar Final meeting, Apr 2019, Sofia, Bulgaria
Communication dans un congrès
hal-03102622
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Solar Water Splitting: surface energy engineering of GaP Template on SiEuropean Materials Research Society - Spring Meeting 2019 (E-MRS 2019 Spring Meeting), Apr 2019, Phoenix, United States
Communication dans un congrès
hal-02114792
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CIGS Growth on a III-V/Si(001) Platform: Towards CIGS/Si Tandem Solar Cells36th European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC 2019), Sep 2019, Marseille, France. pp.769
Communication dans un congrès
hal-03408403
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(114) GaP surface texturation on Si for water splittingEMRS Spring meeting 2018, Jun 2018, Strasbourg, France
Communication dans un congrès
hal-01708047
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GaP Template on Si for Solar Water Splitting: surface energy engineeringnanoGe Fall Meeting 2018 (NGFM18), Oct 2018, Torremolinos, Spain
Communication dans un congrès
hal-01909068
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A universal mechanism to describe the III-V on Si growth by Molecular Beam Epitaxy20th International Conference on Molecular-Beam Epitaxy (ICMBE 2018), Sep 2018, Shanghai, China. pp.Th-C1-3(S)
Communication dans un congrès
hal-01910554
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Low-frequency Raman spectroscopy and elastic softness of hybrid lead halide perovskites4è Journées Pérovskites Halogénées (JPH 2018), May 2018, Autrans, France. pp.29
Communication dans un congrès
hal-01968771
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Nano Beam X-ray Scattering on GaP/Si for III-V Monolithic Integration on SiliconEuropean Materials Research Society - Spring Meeting 2018 (E-MRS 2018 Spring Meeting), Jun 2018, Strasbourg, France
Communication dans un congrès
hal-02352639
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Large scale textured GaP(114) growth on vicinal Si substrate by Molecular Beam Epitaxy for water splitting applications20th International Conference on Molecular-Beam Epitaxy (ICMBE 2018), Sep 2018, Shanghai, China. pp.Tu-P-43(S)
Communication dans un congrès
hal-01910556
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A general III-V/Si growth process descriptionEuropean Materials Research Society - Spring Meeting 2018 (E-MRS 2018 Spring Meeting), Jun 2018, Strasbourg, France
Communication dans un congrès
hal-01910535
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III-V/Si heterogeneous growth : thermodynamics and antiphase domains formation34th International Conference on the Physics of Semiconductors (ICPS 2018), Jul 2018, Montpellier, France
Communication dans un congrès
hal-01910543
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Elastic softness of hybrid lead halide perovskitesJournées de la Diffusion Neutronique (JDN 2018), May 2018, Roquebrune-sur-Argens, France
Communication dans un congrès
hal-01933567
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GaP/Si(001) polar-on-nonpolar epitaxial growth revisited by scanning tunneling microscopy.Réunion plénière du GDR Pulse (PULSE 2017), Oct 2017, Paris, France
Communication dans un congrès
hal-01715954
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GaP/Si(001) polar-on-nonpolar epitaxial growth revisited by scanning tunneling microscopy16th International Conference on the Formation of Semiconductor Interfaces (ICFSI-16), Jul 2017, Hannover, Germany
Communication dans un congrès
hal-01715971
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Opportunities and Obstacles of Monolithic III-V Integration on SiliconDesign, Automation & Test in Europe conference (DATE 2017) - 3rd International Workshop on Optical/Photonic Interconnects for Computing Systems (OPTICS Workshop), Mar 2017, Lausanne, Switzerland
Communication dans un congrès
hal-01549924
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III-V/Si 3D crystal growth: a thermodynamic descriptionEnergy Materials Nanotechnology Meeting 2017 / Collaborative Conference on Crystal Growth (EMN 3CG 2017), Aug 2017, Berlin, Germany
Communication dans un congrès
hal-01708282
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Role of marker layers on antiphase domains in GaP/Si heterostructuresExtended Defects in Semiconductors (EDS 2016), Sep 2016, Les Issambres, France
Communication dans un congrès
hal-01496758
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Tailoring second-order harmonic generation with crystal antiphase domains in GaP/Si19th International Conference on Molecular-Beam Epitaxy (IC-MBE 2016), Sep 2016, Montpellier, France
Communication dans un congrès
hal-01496763
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First stage results on III-V/Si tandem cells using GaAsPN dilute-nitrideEuropean Materials Research Society - Spring Meeting 2016 (E-MRS 2016 Spring Meeting), May 2016, Lille, France
Communication dans un congrès
hal-01496924
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Impact of crystal antiphase boundaries on second harmonic generation in GaP microdisksEuropean Materials Research Society - Spring Meeting 2016 (E-MRS 2016 Spring Meeting), May 2016, Lille, France
Communication dans un congrès
hal-01497145
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Low energy phonon spectroscopy and translation-rotation coupling in hybrid perovskites crystals2è Journées Pérovskites Hybrides (JPH 2016), May 2016, Rennes, France
Communication dans un congrès
hal-01416169
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Advanced concepts of photovoltaics based on III-V compounds16th International Conference of Physical Chemistry (ROMPHYSCHEM-16), Sep 2016, Galaţi, Romania
Communication dans un congrès
hal-01496667
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Raman and Brillouin scattering from single crystals of CH3NH3PbBr3 around the cubic to tetragonal phase transition2èmes Journées Perovskites Hybrides (JPH 2016), May 2016, Rennes, France
Communication dans un congrès
hal-01337984
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3D GaP/Si(001) growth mode and antiphase boundaries19th International Conference on Molecular-Beam Epitaxy (IC-MBE 2016), Sep 2016, Montpellier, France
Communication dans un congrès
hal-01497144
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Etude de la croissance cohérente de GaP/Si(001) en couche minceRéunion plénière du GDR Pulse (PULSE 2016), Jul 2016, Marseille, France
Communication dans un congrès
hal-01497149
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Plastic crystal behavior, tight-binding modelling and low energy phonon spectroscopy in hybrid perovskites crystalsHybrid and Organic Photovoltaics Conference (HOPV 2016), Jun 2016, Swansea, United Kingdom
Communication dans un congrès
hal-01420429
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Numerical and experimental ongoing on III-V/Si high-efficiency tandem solar cellEuropean Congress and Exhibition on Advanced Materials and Processes (EUROMAT 2015), Sep 2015, Warsaw, Poland
Communication dans un congrès
hal-01203374
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Monolithic integration of GaAsPN dilute-nitride compounds on silicon substrates: toward the III-V/Si tandem solar cellSPIE Photonics West - OPTO 2015, Feb 2015, San Francisco, United States
Communication dans un congrès
hal-01497194
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Investigation des propriétés optiques des micro-disques de GaP pour l’intégration de fonctions optiques sur siliciumOptique Bretagne 2015 - 35ème Journées Nationales d'Optique Guidée (JNOG'35), Jul 2015, Rennes, France. pp.133-135
Communication dans un congrès
hal-01497234
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Toward the III-V/Si high efficiency tandem solar cell7th International Workshop on "Advanced optical and X-ray characterization techniques of multifunctional materials for information and communication technologies, health and renewable energy applications", Sep 2015, Bucarest, Romania
Communication dans un congrès
hal-01497190
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GaAsPN-based PIN solar cells MBE-grown on GaP substrates: toward the III-V/Si tandem solar cellSPIE Photonics West - OPTO 2015, Feb 2015, San Francisco, United States. pp.93580H, ⟨10.1117/12.2081376⟩
Communication dans un congrès
hal-01166431
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Analyse quantitative des antiphases dans des nanocouches épitaxiales GaP/Si pour la photonique sur siliciumRayons X & Matière 2015, Dec 2015, Grenoble, France
Communication dans un congrès
hal-01497228
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Investigation of the optical properties of GaP microdisks for optical functions integrated on siliconCompound Semiconductor Week 2015 (CSW 2015), Jun 2015, Santa-Barbara, United States
Communication dans un congrès
hal-01147496
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Quantitative evaluation of microtwins and antiphase defects towards a GaP/Si platform for monolithic integrated photonicsEuropean Materials Research Society - Spring Meeting 2015 (E-MRS 2015 Spring Meeting), May 2015, Lille, France
Communication dans un congrès
hal-01497220
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(In)GaP integration on Si for photonics and energyEuropean Materials Research Society - Fall Meeting 2015 (E-MRS 2015 Fall Meeting), Sep 2015, Warsaw, Poland
Communication dans un congrès
hal-01497184
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Epitaxie cohérente de composés GaP et GaAsPN à azote dilué sur substrats de Si pour l’élaboration de cellules PV tandem III-V/SiMatériaux 2014, Nov 2014, Montpellier, France
Communication dans un congrès
hal-01115312
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Analyse quantitative par diffraction des rayons X des défauts plans dans GaP/SI pour la photonique sur SiRéunion plénière du GDR Pulse (PULSE 2014), Oct 2014, Toulouse, France
Communication dans un congrès
hal-01137337
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Thorough structural and optical analyses of GaP-based heterostructures monolithically grown on silicon substrates for photonics on Si applications: toward the laser on silicon and high efficiency photovoltaics on silicon6th International Workshop on "Advanced optical and X-ray characterization techniques of multifunctional materials for information and communication technologies, health and renewable energy applications", Sep 2014, Bucharest, Romania
Communication dans un congrès
hal-01114912
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Low cristalline defect density in GaP/Si nanolayersEuropean Materials Research Society 2014 Sptring Meeting (E-MRS 2014), May 2014, Lille, France
Communication dans un congrès
hal-01115024
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Advanced concepts of III-V-based Solar Cells heterostructures: towards III-V/Si CPV on Si substrates and hot-carrier solar cells on InP substratesEuropean Materials Research Society 2014 Sptring Meeting (E-MRS 2014), May 2014, Lille, France
Communication dans un congrès
hal-01115019
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Intégration pseudomorphique dans la filière GaP/Si pour les applications lasers sur pucejournées thématiques du GDR Ondes GT2, Nov 2014, Orsay, France
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hal-01114901
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Abrupt heterointerface and low defect density in GaP/Si nanolayersCompound Semiconductor Week 2014, May 2014, Montpellier, France
Communication dans un congrès
hal-01115278
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Quantitative evaluation of microtwins and antiphase defects in GaP/Si nanolayers for III-V photonics platform on silicon12th Biennal Conference on High-Resolution X-Ray Diffraction and Imaging, Sep 2014, Villard de Lans, France
Communication dans un congrès
hal-01115004
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Intégration optique par croissance directe de nanostructures III-V sur silicium14èmes Journées Nano, Micro et Optoélectronique (JNMO), May 2013, Evian, France
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hal-00918745
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Enhanced incorporation of nitrogen on atomic step edges adsorption sites in diluted nitrides alloyseuro-MBE conference, Mar 2013, Levi, Finland
Communication dans un congrès
hal-00918668
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GaAsPN compounds for Si photonicsInternational Workshop "Silicon & Photonics", Jun 2013, Rennes, France
Communication dans un congrès
hal-00918743
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Développement d'un cluster de croissance UHVCVD-MBE pour l'intégration pseudomorphique III-V/SiRéunion plénière du GDR Pulse (PULSE 2013), Jul 2013, Aix-en-Provence, France
Communication dans un congrès
hal-00918749
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Analyse quantitative de la perfection cristalline de nanocouches épitaxiales GaP/SiXème colloque rayons X et matière, Nov 2013, Nantes, France
Communication dans un congrès
hal-00918790
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Analyse quantitative des micromacles dans des nanocouches épitaxiales GaP/Si pour la photonique sur siliciumXème colloque rayons X et matière, Nov 2013, Nantes, France
Communication dans un congrès
hal-00918791
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Advanced X-ray analyses on epitaxially-grown thin films for optoelectronic applications15th International Conference of Physical Chemistry - ROMPHYSCHEM-15, Sep 2013, Bucharest, Romania
Communication dans un congrès
hal-00918793
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HR-TEM study of GaN-GaP type II interfaces18th Microscopy of Semiconducting Materials MSMXVIII, Apr 2013, Oxford, United Kingdom
Communication dans un congrès
hal-00918664
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Etude par TEM et DRX des défauts cristallins dans des couches épitaxiées par MBE de GaP sur Silicium (001)Réunion plénière du GDR Pulse (PULSE 2013), Jul 2013, Aix-en-Provence, France
Communication dans un congrès
hal-00918748
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UHVCVD-MBE growth cluster for III-N-V/Si solar cellsCompound semiconductors week, ISCS, 2013, May 2013, Kobe, Japan
Communication dans un congrès
hal-00918735
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gamma-X competition for the optical transition of (In,Ga)As(N)/GaP quantum dots (QDs)European Materials research society meeting EMRS 2013, May 2013, Strasbourg, France
Communication dans un congrès
hal-00918730
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Growth of GaP on biatomic Si steps using a UHVCVD-MBE clustereuro-MBE conference, Mar 2013, Levi, Finland
Communication dans un congrès
hal-00918666
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Monolithic integration of diluted-nitride III-V-N compounds on silicon substrates : toward the III-V/Si Concentrated PhotovoltaicsInternational Symposium on Inorganic and Environmental Materials, Oct 2013, Rennes, France
Communication dans un congrès
hal-00918754
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Quantitative study of microtwins in GaP/Si thin film and GaAsPN quantum wells grown on silicon substrates17th International Conference on Molecular Beam Epitaxy (MBE 2012), Sep 2012, Nara, Japan. pp.25-28, ⟨10.1016/j.jcrysgro.2012.11.046⟩
Communication dans un congrès
istex
hal-00788399
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Optimisation des propriétés structurale de l'interface GaP/Si et des propriétés électroniques de cellules solaires GaAsPN/GaP pour la fabrication de cellule tandemJournées nationales du Photovoltaïque JNPV 2013, Dec 2013, Dourdan, France
Communication dans un congrès
hal-00918758
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Origin and observations of extended defects in III-V epilayers on SiInternational Workshop "Silicon & Photonics", Jun 2013, Rennes, France
Communication dans un congrès
hal-00918738
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Ab initio investigation of defect nucleation at III-V/Si heterointerface for tandem solar cells applicationsEuropean Materials Research Society meeting E-MRS 2013, May 2013, Strasbourg, France
Communication dans un congrès
hal-00918729
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Raman investigation of GaP-Si interfaces grown by molecular beam epitaxyEuropean Materials Research Society Spring Meeting 2012 (E-MRS Spring 2012), May 2012, Strasbourg, France. pp.72-75, ⟨10.1016/j.tsf.2012.11.132⟩
Communication dans un congrès
istex
hal-00788308
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New concept of photovoltaic heterostructure GaP/c-Si : AFORS-HET simulation and first pseudomorphic approachJournées nationales du Photovoltaïque JNPV 2013, Dec 2013, Dourdan, France
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hal-00918767
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Structural and optical properties of AlGaP confinement layers and InGaAs quantum dots light emitters onto GaP substrate: towards photonics on silicon applicationEuropean Materials Research Society Spring Meeting 2012 (E-MRS Spring 2012), May 2012, Strasbourg, France. pp.87-91, ⟨10.1016/j.tsf.2012.10.134⟩
Communication dans un congrès
istex
hal-00918657
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Crystalline defects in GaP layers grown on Si (001)euro-MBE conference 2013, Mar 2013, Levi, Finland
Communication dans un congrès
hal-00918665
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UHVCVD-MBE growth for tandem solar cells4th PhotoVoltaic Technical Conference (PVTC 2013), May 2013, Aix-en-Provence, France
Communication dans un congrès
hal-00918732
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Evaluation of InGaP(N) and GaAsP(N) materials lattice-matched to Si for multi-junction solar cellsinternational conference on MBE, 2012, Japan
Communication dans un congrès
hal-00726772
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coherent integration of photonics on silicon through the growth of GaP/SiTechnical Meeting of Sandie European Network of Excellence, 2012, Berlin, Germany
Communication dans un congrès
hal-00788526
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Monolithic growth of III-V-N diluted nitride devices on Si substrate for solar cellsJournées nationales du photovoltaïque JNPV2012, 2012, Chantilly, France
Communication dans un congrès
hal-00788544
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Sb surfactant mediated growth of InAs/AlAsSb quantum wells up to 8 monolayersInternational Conference on Superlattices, Nanostructures and Nanodevices, Jul 2012, Dresden, Germany
Communication dans un congrès
hal-00809031
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Growth of III-V GaP on biatomic Si steps using a UHVCVD-MBE clusterJournées nationales du photovoltaïque 2012, 2012, Chantilly, France
Communication dans un congrès
hal-00788460
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Développement d'un laser sur silicium dans l'approche pseudomorphiqueJournées nationales de l'optique guidée, 2012, Lyon, France
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hal-00788434
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Potentiality of GaAsPN and InGaPN for photovoltaic applications3rd PhotoVoltaic Technical Conference (PVTC 2012), Jun 2012, Aix-en-Provence, France
Communication dans un congrès
hal-00726855
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InGaPN and GaAsPN layers for tandem solar cells on siliconEuropean materials research society international conference (EMRS), 2012, Strasbourg, France
Communication dans un congrès
hal-00726850
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Dilute nitride GaNAsP for photonic applications on siliconInternational Symposium on nitrides (ISNT), 2012, saint-Malo, France
Communication dans un congrès
hal-00726885
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Evaluation of InGaPN and GaAsPN materials lattice-matched to Si for multi-junction solar cellsJournées nationales du photovoltaïque (JNPV 2012), 2012, Chantilly, France
Communication dans un congrès
hal-00788478
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Coherent integration of photonics on silicon through the growth of nanostructures on GaP/SiPhotonics west 2012, Jan 2012, San Fransisco, United States. pp.82681H, ⟨10.1117/12.910279⟩
Communication dans un congrès
hal-00654337
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Interpretation of the two-components observed in high resolution X-ray diffraction omega-scan peaks from mosaic thin films: case of both PLD-grown ZnO on c-sapphire substrate and MBE-grown GaP on silicon substrate3rd International Workshop "Current trends and advanced ellipsometric and XRD techniques for the characterization of nanostructured materials", Sep 2011, Bucharest, Romania
Communication dans un congrès
hal-00726686
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MBE growth of (GaAsPN/GaPN)/GaP quantum wells light emitting diodeeuro-MBE 2011, Mar 2011, Alpe d'Huez, France
Communication dans un congrès
hal-00654313
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Studies of PLD-grown ZnO and MBE-grown GaP mosaic thin films by x-ray scattering methods: beyond the restrictive omega rocking curve linewidth as a figure-of-meritPhotonics West, Jan 2011, San Fransisco, United States. pp.79400L, ⟨10.1117/12.877661⟩
Communication dans un congrès
hal-00654279
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Structural characterisation of GaP/Si nanolayersEuropean Materials Research Society 2011, May 2011, Strasbourg, France
Communication dans un congrès
hal-00654330
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Carrier injection in GaAsP(N)/GaPN Quantum Wells on SiliconCompound Semiconductor Week 2011 - 23rd International Conference on Indium Phosphide and Related Materials (IPRM 2011), May 2011, Berlin, Germany. pp.1
Communication dans un congrès
hal-00654285
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Structural charaterisation of GaP/Si nanolayersCompound Semiconductor Week 2011 - 23rd International Conference on Indium Phosphide and Related Materials (IPRM 2011), May 2011, Berlin, Germany. pp.1-4
Communication dans un congrès
hal-00654292
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structural characterization of MBE grown GaP/Si nanolayerseuro-MBE, Mar 2011, Alpe d'Huez, France
Communication dans un congrès
hal-00654309
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caractérisation de semi-conducteurs III-V nanostructurés par microscopie à force atomiqueJournées de la microscopie champ proche Bretagne, Jun 2010, Rennes, France. pp.1
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hal-00504500
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Croissance hétérogène de semi-conducteurs III-V sur silicium : vers l'optoélectronique sur siliciumSéminaire PONANT 2010, Jul 2010, Rennes, France. pp.9-11
Communication dans un congrès
hal-00504506
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Fundamental studies for coherent growth of III-V materials on Si: toward Photonics on SiliconEMRS, Jun 2009, Strasbourg, France. pp.1
Communication dans un congrès
hal-00491771
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Heterogeneous growth and characterisation of III-V material on Si (001) substrate for photonics applicationsjournées de la Société Française de métallurgie et matériaux (SF2M) 2009, Jun 2009, Rennes, France. pp.W. Guo
Communication dans un congrès
hal-00486672
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Transition fils boites dans le système InAs/InP (100)Journées de la Société Française de métallurgie et matériaux (SF2M), Jun 2009, Rennes, France. pp.W. Lu
Communication dans un congrès
hal-00486673
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First step to Si photonics: synthesis of quantum dot light-emitters on GaP substrate by MBE9th International Conference Trends in Nanotechnologies (TNT 2008), Sep 2008, Oviedo, Spain. pp.2207, ⟨10.1002/pssc.200881722⟩
Communication dans un congrès
istex
hal-00491426
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Self-organized growth of InAs quantum dots on InP substrate emitting at 1.55-μmSecond French Research Organizations - Tohoku University Joint Workshop on Frontier Materials, Nov 2009, Sendai, Japan. p-23
Communication dans un congrès
hal-00491459
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Improvement of 1.55 µm InAs QD laser using vicinal (001)InP substrateIPRM, Indium Phosphide & Related Materials, May 2009, Newportbeach, United States. pp.41 - 44, ⟨10.1109/ICIPRM.2009.5012422⟩
Communication dans un congrès
hal-00485799
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Toward a light-emitter on Si: Growth of InAs and InP nanostructure on GaP substrate(International Workshop on Semiconductor Quantum Dot Devices and Applications), Jul 2008, Rennes, France. pp.1
Communication dans un congrès
hal-00491776
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Epitaxie des boites quantiques hautes performances InAs/InGaAsP/InP(100) pour des applications laserJournée nanosciences de bretagne (JNB2),, Jun 2008, Nantes, France
Communication dans un congrès
hal-00486169
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Epifanix: a software tool for automated analysis of X-ray diffraction scans on epitaxial layersJournées de l'association française de cristallographie AFC 2008, Jul 2008, Rennes, France. pp.A. Letoublon
Communication dans un congrès
hal-00486681
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Growth and characterization of single phase GaP on Si(001)Colloque de l'Association Française de Cristallographie 2008, Jul 2008, Rennes, France. pp.W. Guo
Communication dans un congrès
hal-00486678
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Self-organized growth of InAs quantum dots on InP(001)SQDA (International Workshop on Semiconductor Quantum Dot Devices and Applications), Jul 2008, Rennes, France. pp.G. Elias
Communication dans un congrès
hal-00486675
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Effect of lateral coupling on the carrier redistribution in InAs/InP(311)B high dots surface densityInternational Workshop on Semiconductor Quantum Dot Devices and Applications, Jul 2008, rennes, France. pp.1
Communication dans un congrès
hal-00491786
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Croissance par MBE de Boites quantiques InP sur GaP/Sijournées nanoscience de Bretagne, Jun 2008, Nantes, France. pp.1
Communication dans un congrès
hal-00491778
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InAs quantum dots grown on GaAsSb buffer layer lattice matched on InP2nd SANDiE Workshop on Characterization and modelling of self-assembled semiconductor nanostructures, Dec 2007, Paris, France. pp.W. Lu
Communication dans un congrès
hal-00486709
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Atomic scale structural characterization of long wavelength InAs/InP quantum dots and wiresLWQD (International Workshop on Long Wavelength Quantum Dots : Growth and Applications, Jul 2007, Rennes, France. pp.J.-M. Ulloa
Communication dans un congrès
hal-00486715
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Study of InAs/InP(311)B stacked quantum dots for laser emission at 1.55 µmLWQD, International SANDIE Workshop on Long Wave Length Quantum Dots : Growth and Application, Jul 2007, Rennes, France. pp.G. Elias
Communication dans un congrès
hal-00486707
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Study of InAs/InP(311)B stacked quantum dots for laser emission at 1.55 µm14th European Molecular Beam Epitaxy Workshop, Mar 2007, Sierra Nevada, Spain. pp.A. Letoublon
Communication dans un congrès
hal-00486711
v1
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Stransky-Krastanow Gas Source MBE growth and optical properties of InAs/GaP quantum dotseuro-MBE conference, Mar 2007, Sierra nevada, Granada, France. pp.1
Communication dans un congrès
hal-00491810
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Boîtes quantiques InAs/InP(113) pour l'émission à 1.55 µm : contrôle de la croissance et caractérisation Structurale11ème JNMO (Journées Nano-Micro Electronique et Optoélectronique ), Apr 2006, Aussois, France
Communication dans un congrès
hal-00486720
v1
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Atomic scale analysis of intermixing, segregation and decompostion during self assembly of nanostructures4th international conference on semiconductor quantum dots, May 2006, Paris, France
Communication dans un congrès
hal-00486661
v1
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Strain, size and composition of InAs quantum sticks, embedded in InP, determined via X-ray anomalous diffraction and diffraction anomalous fine structure in grazing incidence2004, pp.11-15
Communication dans un congrès
hal-00140720
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Grazing incidence diffraction anomalous fine structure : a tool for investigating strain distribution and interdiffusion in InAs/InP quantum wires2003, pp.541-542
Communication dans un congrès
hal-00149938
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Grazing incidence diffraction anomalous fine structure of self-assembled semiconductor nanostructures2002, pp.24-33
Communication dans un congrès
hal-00149685
v1
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Study of InAs/InP using grazing incidence diffraction anomalous fine structureEcole Prédoctorale sur la Physique Mésoscopique, 2001, Les Houches, France
Communication dans un congrès
hal-00152576
v1
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InP-based Materials on Si for Energy and Photonic Applications23rd International Conference on Molecular-Beam Epitaxy (ICMBE 2024)., Sep 2024, Matsue, Japan
Poster de conférence
hal-04745313
v1
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Cost-efficient III-V/Si photo-electrodes for hydrogen productionPEPR H2 days, Mar 2024, Grenoble, France
Poster de conférence
hal-04745403
v1
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Fabrication and characterization of zinc sulfide nanowaveguides for 2nd-order nonlinear photonics36th International Confererence on the Physics of Semiconductors 2024, Jul 2024, Ottawa, Canada
Poster de conférence
hal-04745344
v1
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Microstructure characterization of CIGS/GaP/Si tandem solar cellsEuropean Microscopy Congress (EMC) 2024, Aug 2024, Copenhagen, Denmark
Poster de conférence
hal-04745370
v1
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III-V GaP solar cells on silicon12è Journées Nationales du PhotoVoltaïque (JNPV 2022), Nov 2022, Dourdan, France
Poster de conférence
hal-03968270
v1
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Photoemission study of S-vapour exposed epi-GaP/c-Si(001) surfaces12è Journées Nationales du PhotoVoltaïque (JNPV 2022), Nov 2022, Dourdan, France
Poster de conférence
hal-03968206
v1
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Bandgap engineering of III-V semiconductors on silicon for solar hydrogen production5èmes Journées des Carburants Solaires, Sep 2021, Saint Jacut de la Mer, France
Poster de conférence
hal-03408286
v1
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Performances of III-P/Si based photoelectrodes for solar hydrogen productionJournées Nationales du photovoltaïque 2020, Jan 2021, Dourdan, France. 2021
Poster de conférence
hal-03032889
v1
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CIGS growth on a GaP/Si(001) platform: towards CIGS/Si tandem solar cells11è Journées Nationales du PhotoVoltaïque (JNPV 2021), Jan 2021, Dourdan, France
Poster de conférence
hal-03408374
v1
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MBE-grown GaAs(x)P(1-x)/Si photoelectrodes for solar hydrogen production21st International Conference on Molecular-Beam Epitaxy (ICMBE 2018), Sep 2021, Mexico (virtual), Mexico
Poster de conférence
hal-03402702
v1
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Epitaxial growth of Cu(In, Ga)S2 thin films on GaP/Si(001) pseudo-substrate for CIGS/Si tandem solar cellJNPV 2021, Dec 2021, Dourdan, France
Poster de conférence
hal-04648753
v1
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Electron-phonon interactions around antiphase boundaries in InGaP/SiGe/Si : structural and optical characterizationsInternational Symposium : 20th Anniversary of LPQM, Apr 2019, Cachan, France
Poster de conférence
hal-02882424
v1
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A Study on the Strain Distribution by Scanning X-ray diffraction on GaP/Si for III-V Monolithic Integration on Silicon for Nonlinear OpticsRayons X et Matière 2019, Nov 2019, Nancy, France
Poster de conférence
hal-03108397
v1
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Photoluminescence of 2D-vertical In-rich APBs embedded in InGaP/SiGe/Si20th International Conference on Molecular-Beam Epitaxy (ICMBE 2018), Sep 2018, Shanghai, China. 2018
Poster de conférence
hal-01909074
v2
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Antiphase boundaries in InGaP/SiGe/Si : structural and optical propertiesEuropean Materials Research Society - Spring Meeting 2018 (E-MRS 2018 Spring Meeting), Jun 2018, Strasbourg, France. 2018
Poster de conférence
hal-01864388
v1
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Elastic softness of hybrid lead halide perovskitesInternational Conference on Perovskite Thin Film Photovoltaics, Photonics and Optoelectronics 2018 (ABXPV&PEROPTO 18), Feb 2018, Rennes, France. 2018
Poster de conférence
hal-01722941
v1
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Scanning tunneling microscopy investigation of GaP epitaxial growth on nominal and vicinal Si(001) substrates for optoelectronic applicationsEuropean Materials Research Society - Spring Meeting 2018 (E-MRS 2018 Spring Meeting), Jun 2018, Strasbourg, France. 2018
Poster de conférence
hal-01866135
v1
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Excitons bounded around In-rich antiphase boundaries34th International Conference on the Physics of Semiconductors (ICPS 2018), Jul 2018, Montpellier, France. 2018
Poster de conférence
hal-01864401
v1
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Study of the 3D growth mode of III-V on Si by DFTRéunion plénière du GDR Pulse (PULSE 2017), Oct 2017, Paris, France
Poster de conférence
hal-01708149
v1
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Towards III-V on silicon solar cells7è Journées Nationales du PhotoVoltaïque (JNPV 2017), Dec 2017, Dourdan, France. 107, pp.191603 - 191603, 2015
Poster de conférence
hal-01660154
v1
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Structural and dynamic properties of hybrid perovskites for photovoltaic applications3è Journées Pérovskites Hybrides (JPH 2017), May 2017, Angers, France
Poster de conférence
hal-01523643
v1
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GaP/Si(001) polar-on-nonpolar epitaxial growth revisited by scanning tunneling microscopy31è colloque Journées Surfaces et Interfaces (JSI 2017), Jan 2017, Rennes, France
Poster de conférence
hal-01715988
v1
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Scanning tunneling microscopy investigation of GaP epitaxial growth on nominal and vicinal Si(001) substrates for optoelectronic applicationsEuropean Materials Research Society - Spring Meeting 2016 (E-MRS 2016 Spring Meeting), May 2016, Lille, France
Poster de conférence
hal-01497071
v1
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GaAsPN Single and Tandem Solar Cells on Silicon19th International Conference on Molecular-Beam Epitaxy (IC-MBE 2016), Sep 2016, Montpellier, France
Poster de conférence
hal-01496922
v1
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Relationship between antiphase domains, roughness and surface/interface energies during the epitaxial growth of GaP on SiEuropean Materials Research Society - Spring Meeting 2016 (E-MRS 2016 Spring Meeting), May 2016, Lille, France
Poster de conférence
hal-01497064
v1
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Impact of Antiphase Boundaries on Non-linear Frequency Conversion in GaP/Si MicrodisksCompound Semiconductor Week 2016 (CSW 2016), Jun 2016, Toyama, Japan
Poster de conférence
hal-01496739
v1
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AlGaP-growth and doping by MBE19th International Conference on Molecular-Beam Epitaxy (IC-MBE 2016), Sep 2016, Montpellier, France
Poster de conférence
hal-01497057
v1
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Etude par microscopie à effet tunnel de la croissance épitaxiale de GaP sur substrats Si(001) nominaux et vicinaux pour l’optoélectroniqueRéunion plénière du GDR Pulse (PULSE 2016), Jul 2016, Marseille, France
Poster de conférence
hal-01497147
v1
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Scanning tunneling microscopy investigation of GaP MBE growth on nominal and vicinal Si(001) substrates for optoelectronic applications19th International Conference on Molecular-Beam Epitaxy (IC-MBE 2016), Sep 2016, Montpellier, France
Poster de conférence
hal-01496729
v1
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X-ray Coherent Scattering on GaP/Si for III-V Monolithic Integration on SiliconInternational Workshop on Phase Retrieval and Coherent Scattering (COHERENCE 2016), Jun 2016, Saint-Malo, France. 2016
Poster de conférence
hal-01496666
v1
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GaP/Si Antiphase domains annihilation at the early stages of growthSummer School of the French Epitaxy Network, Sep 2015, Porquerolles, France
Poster de conférence
hal-02497252
v1
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Vers les cellules solaires à haut rendement à base de composés III-V sur substrats bas-couts de siliciumOptique Bretagne 2015 - Horizons de l'Optique, Jul 2015, Rennes, France
Poster de conférence
hal-01497238
v1
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Carrier injection in GaP-based laser waveguides and dilute nitrides gain medium18th European Molecular Beam Epitaxy Workshop (Euro-MBE 2015), Mar 2015, Canazei, Italy. 2015
Poster de conférence
hal-01147468
v1
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Lattice-matched GaAsPN/GaP single junction solar cell for high-efficiency tandem solar cells on siliconEuro-MBE 2015, Mar 2015, Canazei, Italy. 2015
Poster de conférence
hal-01147439
v1
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Electrical injection in GaP-based laser waveguides and active areas26th International Conference on Indium Phosphide and Related Materials (IPRM 2014), May 2014, Montpellier, France. IEEE, 26th International Conference on Indium Phosphide and Related Materials (IPRM 2014), pp.P23, 2014, ⟨10.1109/ICIPRM.2014.6880545⟩
Poster de conférence
hal-01114889
v1
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Substrate bonding using electroplated copper through silicon vias for VCSEL fabrication26th International Conference on Indium Phosphide and Related Materials (IPRM 2014), May 2014, Montpellier, France. IEEE, Indium Phosphide and Related Materials Proceedings (IPRM 2014), 26th International Conference on, pp.P21, 2014, ⟨10.1109/ICIPRM.2014.6880543⟩
Poster de conférence
hal-01112963
v1
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Development of GaAsPN alloy for its integration in III-V/Si tandem solar cellWorkshop on above 25% efficiency solar cells via low cost approaches, Jul 2014, Palaiseau, France
Poster de conférence
hal-01115014
v1
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