Benjamin Damilano

161
Documents

Publications

Publications

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Polarity inversions within AlN films on sapphire exploiting silicon and oxygen diffusion during high temperature annealing

Valeria Bonito Oliva , Sylvia Hagedorn , Eric Robin , Holm Kirmse , Jean-Luc Rouviere et al.
Crystal Growth & Design, 2025, 25 (15), pp.5697-5708. ⟨10.1021/acs.cgd.4c01641⟩
Article dans une revue hal-05227803 v1

Swift heavy ion irradiation puts InGaN/GaN multi-quantum wells on the track for efficient green light emission

M. Sall , G. Sow , A. Baillard , A. Dujarrier , L. Goodwin et al.
Nano Trends, 2025, 9, pp.100078. ⟨10.1016/j.nwnano.2025.100078⟩
Article dans une revue hal-04922995 v1
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Enhancing solar cell efficiency of AlxIn1-xN/Si heterojunctions using an a-Si buffer: A study of material, interface and device properties

M. Sun , R.G. Cornejo , M. de la Mata , S.I. Molina , Benjamin Damilano et al.
Surfaces and Interfaces, 2025, 72, pp.107278. ⟨10.1016/j.surfin.2025.107278⟩
Article dans une revue hal-05227790 v1
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Investigation of AlGaN UV emitting tunnel junction LED devices by off-axis electron holography

David Cooper , Victor Fan Arcara , Benjamin Damilano , Jean-Yves Duboz
Nanotechnology, 2024, 35 (43), pp.435206. ⟨10.1088/1361-6528/ad690a⟩
Article dans une revue hal-04726776 v1
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Perspectives for III-Nitride photonic platforms

Philippe Boucaud , Nagesh Bhat , Maksym Gromovyi , Moustafa El Kurdi , Antoine Reserbat-Plantey et al.
Nano Futures, 2024, 8 (2), pp.022001. ⟨10.1088/2399-1984/ad41aa⟩
Article dans une revue (article de synthèse) hal-04560375 v1
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Vector Beam Generation from Standing Hollow GaN Nanowire Lasers on Sapphire Substrates

Masato Takiguchi , Sylvain Sergent , Benjamin Damilano , Stéphane Vézian , Sébastien Chenot et al.
ACS photonics, 2024, 11 (2), pp.789-794. ⟨10.1021/acsphotonics.3c01735⟩
Article dans une revue hal-04489537 v1
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Molecular beam epitaxy of GaN/AlGaN quantum wells on bulk GaN substrate in the step-flow or step meandering regime: Influence on indirect exciton diffusion

B. Damilano , R. Aristégui , H. Teisseyre , S. Vézian , V. Guigoz et al.
Journal of Applied Physics, 2024, 135 (9), ⟨10.1063/5.0182659⟩
Article dans une revue hal-04489504 v1
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Regular red-green-blue InGaN quantum wells with In content up to 40% grown on InGaN nanopyramids

Amélie Dussaigne , Colin Paillet , Névine Rochat , David Cooper , Adeline Grenier et al.
Communications Materials, 2024, 5 (1), pp.280. ⟨10.1038/s43246-024-00725-8⟩
Article dans une revue hal-05219604 v1
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GaN/AlN bilayers for integrated photonics

Nagesh Bhat , Maksym Gromovyi , Moustafa El Kurdi , Xavier Checoury , Benjamin Damilano et al.
Optical Materials Express, 2024, 14 (3), pp.792. ⟨10.1364/ome.515887⟩
Article dans une revue hal-04484997 v1
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Nanoporous GaN by selective area sublimation through an epitaxial nanomask: AlN versus Si$_x$N$_y$

B Damilano , S. Vézian , J. Brault , P Ruterana , B. Gil et al.
Nanotechnology, 2023, 34 (24), pp.245602. ⟨10.1088/1361-6528/acc3a2⟩
Article dans une revue hal-04248760 v1
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Intrinsic polarity inversion in III-nitride waveguides for efficient nonlinear interactions

M. Gromovyi , N. Bhat , H. Tronche , P. Baldi , M. El Kurdi et al.
Optics Express, 2023, 31 (19), pp.31397-31409. ⟨10.1364/OE.501221⟩
Article dans une revue hal-04211196 v1
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Low‐Temperature Electrical Transport Properties of Molecular Beam Epitaxy‐Grown Mg‐Doped GaN Subjected to a High‐Temperature Annealing Process

Leszek Konczewicz , Sandrine Juillaguet , Marcin Zajac , Elzbieta Litwin-Staszewska , Mohamed Al Khalfioui et al.
Physica Status Solidi A (applications and materials science), 2023, Nitride Semiconductors, 220 (16), pp.2200769. ⟨10.1002/pssa.202200769⟩
Article dans une revue hal-04248758 v1
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Electrostatic modulation of excitonic fluid in GaN/AlGaN quantum wells by deposition of few-layer graphene and nickel/gold films

R. Aristegui , P. Lefebvre , C. Brimont , T. Guillet , M. Vladimirova et al.
Physical Review B, 2023, 108 (12), pp.125421. ⟨10.1103/PhysRevB.108.125421⟩
Article dans une revue hal-04251300 v1
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Influence of surface roughness on the lasing characteristics of optically pumped thin-film GaN microdisks

Hui Zi , Yuk Fai Cheung , Benjamin Damilano , Eric Frayssinet , Blandine Alloing et al.
Optics Letters, 2022, 47 (6), pp.1521-1524. ⟨10.1364/ol.449482⟩
Article dans une revue hal-04285358 v1
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Porous Nitride Light-Emitting Diodes

Nuño Amador-Mendez , Tiphaine Mathieu-Pennober , Stéphane Vézian , Marie-Pierre Chauvat , Magali Morales et al.
ACS photonics, 2022, 9 (4), pp.1256-1263. ⟨10.1021/acsphotonics.1c01729⟩
Article dans une revue hal-03864353 v1
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Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors

Thi Huong Ngo , Rémi Comyn , Sébastien Chenot , Julien Brault , Benjamin Damilano et al.
Solid-State Electronics, 2022, 188, pp.108210. ⟨10.1016/j.sse.2021.108210⟩
Article dans une revue hal-03467546 v1
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Influence of surface roughness on the lasing characteristics of optically pumped thin-film GaN microdisks

Hui Zi , Yuk Fai Cheung , Benjamin Damilano , Eric Frayssinet , Blandine Alloing et al.
Optics Letters, 2022, 47 (6), pp.1521. ⟨10.1364/OL.449482⟩
Article dans une revue hal-03681897 v1
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Light Polarization in Tunnel Junction Injected UV Light‐Emitting Diodes

Jean-Yves Duboz , Victor Fan Arcara , Cynthia Kessaci , Stéphane Vézian , Benjamin Damilano
Physica Status Solidi A (applications and materials science), 2022, 219 (7), pp.2200055. ⟨10.1002/pssa.202200055⟩
Article dans une revue hal-03828269 v1
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Effect of electric bias on trapping and release of excitons in GaN/(Al,Ga)N quantum wells

R. Aristegui , F. Chiaruttini , B. Jouault , P. Lefebvre , C. Brimont et al.
Physical Review B, 2022, 106 (3), pp.035429. ⟨10.1103/PhysRevB.106.035429⟩
Article dans une revue hal-03759667 v1
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Les nouvelles diodes électroluminescentes pour l’émission UV

Julien Brault , Benjamin Damilano , Jean-Yves Duboz , Bernard Gil
Reflets de la Physique, 2022, 71, pp.16-21. ⟨10.1051/refdp/202271016⟩
Article dans une revue hal-03784792 v1

On the origin of twist in 3D nucleation islands of tetrahedrally coordinated semiconductors heteroepitaxially grown along hexagonal orientations

Philippe Vennéguès , Ludovic Largeau , Virginie Brändli , Benjamin Damilano , Karine Tavernier et al.
Journal of Applied Physics, 2022, 132 (16), pp.165102. ⟨10.1063/5.0111558⟩
Article dans une revue hal-03966716 v1
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Preferential sublimation along threading dislocations in InGaN/GaN single quantum well for improved photoluminescence

Benjamin Damilano , Stéphane Vézian , Marie-Pierre Chauvat , Pierre Ruterana , Nuño Amador-Méndez et al.
Journal of Applied Physics, 2022, 132 (3), pp.035302. ⟨10.1063/5.0089892⟩
Article dans une revue hal-03865257 v1
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Selective sublimation of GaN and regrowth of AlGaN to co-integrate enhancement mode and depletion mode high electron mobility transistors

Thi Huong Ngo , Rémi Comyn , Sébastien Chenot , Julien Brault , Maud Nemoz et al.
Journal of Crystal Growth, 2022, 593, pp.126779. ⟨10.1016/j.jcrysgro.2022.126779⟩
Article dans une revue hal-03741626 v1
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Employing Cathodoluminescence for Nanothermometry and Thermal Transport Measurements in Semiconductor Nanowires

Kelly W Mauser , Magdalena Solà-Garcia , Matthias Liebtrau , Benjamin Damilano , Pierre-Marie Coulon et al.
ACS Nano, 2021, 15 (7), pp.11385-11395. ⟨10.1021/acsnano.1c00850⟩
Article dans une revue hal-03418883 v1
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Broadband decoupling of intensity and polarization with vectorial Fourier metasurfaces

Qinghua Song , Arthur Baroni , Pin Chieh Wu , Sébastien Chenot , Virginie Brandli et al.
Nature Communications, 2021, 12, pp.3631. ⟨10.1038/s41467-021-23908-0⟩
Article dans une revue hal-03111022 v2
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Mapping of the electrostatic potentials in MOCVD and hybrid GaN tunnel junctions for InGaN/GaN blue emitting light emitting diodes by off-axis electron holography correlated with structural, chemical, and optoelectronic characterization

D. Cooper , V. Fan Arcara , B. Damilano , L. Amichi , A. Mavel et al.
Journal of Applied Physics, 2021, 130 (2), pp.025704. ⟨10.1063/5.0054810⟩
Article dans une revue hal-03418879 v1
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Whispering-gallery mode InGaN microdisks on GaN substrates

H Zi , W y Fu , F Tabataba-Vakili , H Kim-Chauveau , E Frayssinet et al.
Optics Express, 2021, 29, ⟨10.1364/oe.427727⟩
Article dans une revue hal-03436102 v1
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Bandwidth Unlimited Polarization-Maintaining Metasurfaces

Q. Song , S. Khadir , S. Vézian , B. Damilano , P. D Mierry et al.
Science Advances , 2021, 7 (5), ⟨10.1126/sciadv.abe1112⟩
Article dans une revue hal-03582572 v1
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Bandwidth-unlimited polarization-maintaining metasurfaces

Q Song , S Khadir , S Vézian , B Damilano , P D Mierry et al.
Science Advances , 2021
Article dans une revue hal-03436097 v1
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Selective GaN sublimation and local area regrowth for co-integration of enhancement mode and depletion mode Al(Ga)N/GaN high electron mobility transistors

Thi Huong Ngo , Rémi Comyn , Sébastien Chenot , Julien Brault , Benjamin Damilano et al.
Semiconductor Science and Technology, 2021, 36 (2), pp.024001. ⟨10.1088/1361-6641/abcbd3⟩
Article dans une revue hal-03035072 v1
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Complexity of the dipolar exciton Mott transition in GaN/(AlGa)N nanostructures

François Chiaruttini , Thierry Guillet , Christelle Brimont , Denis Scalbert , Steeve Cronenberger et al.
Physical Review B, 2021, 103 (4), pp.045308. ⟨10.1103/PhysRevB.103.045308⟩
Article dans une revue hal-03014825 v2
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Lasing up to 380 K in a sublimated GaN nanowire

S. Sergent , B. Damilano , S. Vézian , S. Chenot , T. Tsuchizawa et al.
Applied Physics Letters, 2020, 116 (22), pp.223101. ⟨10.1063/5.0004771⟩
Article dans une revue hal-03024869 v1
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Cathodoluminescence and electrical study of vertical GaN-on-GaN Schottky diodes with dislocation clusters

Thi Huong Ngo , Rémi Comyn , Eric Frayssinet , Hyonju Chauveau , Sébastien Chenot et al.
Journal of Crystal Growth, 2020, 552, pp.125911. ⟨10.1016/j.jcrysgro.2020.125911⟩
Article dans une revue hal-03418915 v1
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Influence of the reactor environment on the selective area thermal etching of GaN nanohole arrays

Pierre-Marie Coulon , Peng Feng , Benjamin Damilano , Stephane Vezian , Tao Wang et al.
Scientific Reports, 2020, 10 (1), ⟨10.1038/s41598-020-62539-1⟩
Article dans une revue hal-03024881 v1
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Analysis of low-threshold optically pumped III-nitride microdisk lasers

Farsane Tabataba-Vakili , Christelle Brimont , Blandine Alloing , Benjamin Damilano , Laetitia Doyennette et al.
Applied Physics Letters, 2020, 117, pp.121103. ⟨10.1063/5.0015252⟩
Article dans une revue hal-02946015 v1
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Multi-microscopy nanoscale characterization of the doping profile in a hybrid Mg/Ge-doped tunnel junction

E. Di Russo , A. Mavel , V Fan Arcara , B. Damilano , Ioanna Dimkou et al.
Nanotechnology, 2020, 31 (46), pp.465706. ⟨10.1088/1361-6528/ab996c⟩
Article dans une revue hal-03024837 v1
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Printing polarization and phase at the optical diffraction limit: near and far-field optical encryption

Qinghua Song , Samira Khadir , Stéphane Vézian , Benjamin Damilano , Philippe de Mierry et al.
Nanophotonics, 2020, 10 (1), pp.697-704. ⟨10.1515/nanoph-2020-0352⟩
Article dans une revue hal-03582590 v1
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Multi-microscopy nanoscale characterization of the doping profile in a hybrid Mg/Ge-doped tunnel junction.

E Di Russo , A Mavel , V Fan Arcara , B Damilano , Ioanna Dimkou et al.
Nanotechnology, 2020, 31 (46), pp.465706. ⟨10.1088/1361-6528/ab996c⟩
Article dans une revue hal-03411352 v1
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Full InGaN red light emitting diodes

A. Dussaigne , F. Barbier , B. Damilano , S. Chenot , A. Grenier et al.
Journal of Applied Physics, 2020, 128 (13), pp.135704. ⟨10.1063/5.0016217⟩
Article dans une revue hal-03418848 v1
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InGaN islands and thin films grown on epitaxial graphene

C Paillet , S. Vézian , C. Matei , A. Michon , B. Damilano et al.
Nanotechnology, 2020, 31 (40), pp.405601. ⟨10.1088/1361-6528/ab98bd⟩
Article dans une revue hal-03024853 v1
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Blue to yellow emission from (Ga,In)/GaN quantum wells grown on pixelated silicon substrate

Benjamin Damilano , Marc Portail , Eric Frayssinet , Virginie Brändli , Florian Faure et al.
Scientific Reports, 2020, 10 (1), ⟨10.1038/s41598-020-76031-3⟩
Article dans une revue hal-03418823 v1
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Monolithic integration of ultraviolet microdisk lasers into photonic circuits in a III-nitride-on-silicon platform

Farsane Tabataba-Vakili , Blandine Alloing , Benjamin Damilano , Hassen Souissi , Christelle Brimont et al.
Optics Letters, 2020, 45 (15), pp.4276-4279. ⟨10.1364/OL.395371⟩
Article dans une revue hal-02908380 v1
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High temperature electrical transport properties of MBE-grown Mg-doped GaN and AlGaN materials

L. Konczewicz , S. Juillaguet , E. Litwin-Staszewska , R. Piotrzkowski , H. Peyre et al.
Journal of Applied Physics, 2020, 128 (8), pp.085703. ⟨10.1063/1.5140561⟩
Article dans une revue hal-02931592 v1
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Revealing topological phase in Pancharatnam-Berry metasurfaces using mesoscopic electrodynamics

Zhanjie Gao , Sandeep Golla , Rajath Sawant , Vladimir Osipov , Gauthier Briere et al.
Nanophotonics, 2020, 9 (16), pp.4711-4718. ⟨10.1515/nanoph-2020-0365⟩
Article dans une revue hal-03582593 v1
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Wetting-Layer-Free AlGaN Quantum Dots for Ultraviolet Emitters

Guido Schifani , Thomas Frisch , Julien Brault , Philippe Vennegues , Samuel Matta et al.
ACS Applied Nano Materials, 2020, 3 (5), pp.4054-4060. ⟨10.1021/acsanm.9b02546⟩
Article dans une revue hal-02883981 v1
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Ptychography retrieval of fully polarized holograms from geometric-phase metasurfaces

Qinghua Song , Arthur Baroni , Rajath Sawant , Peinan Ni , Virginie Brandli et al.
Nature Communications, 2020, 11, pp.2651. ⟨10.1038/s41467-020-16437-9⟩
Article dans une revue hal-02635286 v1
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Effect of AlGaN interlayer on the GaN/InGaN/GaN/AlGaN multi-quantum wells structural properties toward red light emission

Pierre Ruterana , Magali Morales , Nicolas Chery , Thi Huong Ngo , Marie-Pierre Chauvat et al.
Journal of Applied Physics, 2020, 128, pp.223102. ⟨10.1063/5.0027119⟩
Article dans une revue hal-03047502 v1
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Internal quantum efficiencies of AlGaN quantum dots grown by molecular beam epitaxy and emitting in the UVA to UVC ranges

Julien Brault , Samuel Matta , Thi Huong Ngo , Mohamed Al Khalfioui , Pierre Valvin et al.
Journal of Applied Physics, 2019, 126 (20), pp.205701. ⟨10.1063/1.5115593⟩
Article dans une revue hal-02380035 v1
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Subliming GaN into Ordered Nanowire Arrays for Ultraviolet and Visible Nanophotonics

Sylvain Sergent , Benjamin Damilano , Stephane Vezian , Sébastien Chenot , Masato Takiguchi et al.
ACS photonics, 2019, 6 (12), pp.3321-3330. ⟨10.1021/acsphotonics.9b01435⟩
Article dans une revue hal-03024899 v1
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Metasurface orbital angular momentum holography

Haoran Ren , Gauthier Briere , Xinyuan Fang , Peinan Ni , Rajath Sawant et al.
Nature Communications, 2019, 10, ⟨10.1038/s41467-019-11030-1⟩
Article dans une revue hal-02304950 v1
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Demonstration of critical coupling in an active III-nitride microdisk photonic circuit on silicon

Farsane Tabataba-Vakili , Laetitia Doyennette , Christelle Brimont , Thierry Guillet , Stephanie Rennesson et al.
Scientific Reports, 2019, 9, pp.18095. ⟨10.1038/s41598-019-54416-3⟩
Article dans une revue hal-02393815 v1
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III-nitride on silicon electrically injected microrings for nanophotonic circuits

Farsane Tabataba-Vakili , Stéphanie Rennesson , Benjamin Damilano , Eric Frayssinet , Jean-Yves Duboz et al.
Optics Express, 2019, 27 (8), pp.11800-11808. ⟨10.1364/OE.27.011800⟩
Article dans une revue hal-02100722 v1
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Trapping Dipolar Exciton Fluids in GaN/(AlGa)N Nanostructures

François Chiaruttini , Thierry Guillet , Christelle Brimont , Benoit Jouault , Pierre Lefebvre et al.
Nano Letters, 2019, 19 (8), pp.4911-4918. ⟨10.1021/acs.nanolett.9b00914⟩
Article dans une revue hal-02272702 v1
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(Ga,In)N/GaN light emitting diodes with a tunnel junction and a rough n-contact layer grown by metalorganic chemical vapor deposition

V. Fan Arcara , B. Damilano , G. Feuillet , A. Courville , S. Chenot et al.
AIP Advances, 2019, 9 (5), pp.055101. ⟨10.1063/1.5092693⟩
Article dans une revue hal-02304933 v1
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Ge doped GaN and Al 0.5 Ga 0.5 N-based tunnel junctions on top of visible and UV light emitting diodes

V. Fan Arcara , B. Damilano , G. Feuillet , S. Vezian , K. Ayadi et al.
Journal of Applied Physics, 2019, 126 (22), pp.224503. ⟨10.1063/1.5121379⟩
Article dans une revue hal-02569339 v1
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Top-down fabrication of GaN nano-laser arrays by displacement Talbot lithography and selective area sublimation

Benjamin Damilano , Pierre-Marie Coulon , Stephane Vézian , Virginie Brandli , Jean-Yves Duboz et al.
Applied Physics Express, 2019, 12 (4), pp.045007. ⟨10.7567/1882-0786/ab0d32⟩
Article dans une revue hal-02304928 v1
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Displacement Talbot Lithography for nano-engineering of III-nitride materials

Pierre-Marie Coulon , Benjamin Damilano , Blandine Alloing , Pierre Chausse , Sebastian Walde et al.
Microsystems & Nanoengineering, 2019, 5 (1), ⟨10.1038/s41378-019-0101-2⟩
Article dans une revue hal-03024884 v1
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An Etching‐Free Approach Toward Large‐Scale Light‐Emitting Metasurfaces

Gauthier Brière , Peinan Ni , Sébastien Héron , Sebastien Chenot , Stephane Vézian et al.
Advanced Optical Materials, 2019, 7 (14), pp.1801271. ⟨10.1002/adom.201801271⟩
Article dans une revue hal-02118940 v1
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Pendeo-epitaxy of GaN on SOI nano-pillars: Freestanding and relaxed GaN platelets on silicon with a reduced dislocation density

Roy Dagher , Philippe de Mierry , Blandine Alloing , Virginie Brandli , Marc Portail et al.
Journal of Crystal Growth, 2019, 526, pp.125235. ⟨10.1016/j.jcrysgro.2019.125235⟩
Article dans une revue hal-02304951 v1

The microstructure, local indium composition and photoluminescence in green-emitting InGaN/GaN quantum wells

Nicolas Chery , Thi Huong Ngo , M.P. Chauvat , B. Damilano , A Courville et al.
Journal of Microscopy, 2018, Special Issue: Microscopy of Semi‐Conducting Materials, 268 (3), pp.305-313. ⟨10.1111/jmi.12657⟩
Article dans une revue hal-01691523 v1
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Enhanced excitonic emission efficiency in porous GaN

Thi Huong Ngo , Bernard Gil , T. Shubina , B. Damilano , Stephane Vezian et al.
Scientific Reports, 2018, 8, pp.15767. ⟨10.1038/s41598-018-34185-1⟩
Article dans une revue hal-01905654 v1

Internal quantum efficiency in polar and semipolar (11e22) InxGa1-xN/InyGa1-yN quantum wells emitting from blue to red

Thi Huong Ngo , Nicolas Chery , Pierre Valvin , A Courville , Philippe de Miery et al.
Superlattices and Microstructures, 2018, 113, pp.129. ⟨10.1016/j.spmi.2017.10.030⟩
Article dans une revue hal-01700051 v1

Photoluminescence properties of (Al,Ga)N nanostructures grown on Al0.5Ga0.5N (0001)

Samuel Matta , Julien Brault , Thi Huong Ngo , B. Damilano , Mathieu Leroux et al.
Superlattices and Microstructures, 2018, 114, pp.161. ⟨10.1016/j.spmi.2017.12.029⟩
Article dans une revue hal-01700054 v1
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Optical and Thermal Performances of (Ga,In)N/GaN Light Emitting Diodes Transferred on a Flexible Tape

B. Damilano , Marie Lesecq , Di Zhou , Éric Frayssinet , Sebastien Chenot et al.
IEEE Photonics Technology Letters, 2018, 30 (17), pp.1567-1570. ⟨10.1109/LPT.2018.2858000⟩
Article dans une revue hal-02304909 v1
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Mesoporous GaN Made by Selective Area Sublimation for Efficient Light Emission on Si Substrate

Benjamin Damilano , Stéphane Vézian , Jean Massies
physica status solidi (b), 2018, 255 (5), pp.1700392. ⟨10.1002/pssb.201700392⟩
Article dans une revue hal-03553871 v1
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UVA and UVB light emitting diodes with AlyGa1-yN quantum dot active regions covering the 305-335 nm range

Julien Brault , M. Al Khalfioui , Samuel Matta , B. Damilano , Mathieu Leroux et al.
Semiconductor Science and Technology, 2018, 33 (7), pp.075007. ⟨10.1088/1361-6641/aac3bf⟩
Article dans une revue hal-01863551 v1

Crack Statististics and Stress Analysis of Thick GaN on Patterned Silicon Substrate

Tasnia Hossain , Mohammad Junaebur Rashid , Eric Frayssinet , Nicolas Baron , Benjamin Damilano et al.
physica status solidi (b), 2018, 255 (5), pp.1700399. ⟨10.1002/pssb.201700399⟩
Article dans une revue hal-01871066 v1
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Blue Microlasers Integrated on a Photonic Platform on Silicon

Farsane Tabataba-Vakili , Laetitia Doyennette , Christelle Brimont , Thierry Guillet , Stephanie Rennesson et al.
ACS photonics, 2018, 5 (9), pp.3643. ⟨10.1021/acsphotonics.8b00542⟩
Article dans une revue hal-01951027 v1

Influence of the heterostructure design on the optical properties of GaN and Al0.1Ga0.9N quantum dots for ultraviolet emission

Samuel Matta , Julien Brault , Thi Huong Ngo , B. Damilano , Maxim Korytov et al.
Journal of Applied Physics, 2017, 122, pp.085706. ⟨10.1063/1.5000238⟩
Article dans une revue hal-01579358 v1

Recent improvements of flexible GaN-based HEMT technology

Sarra Mhedhbi , Marie Lesecq , Philippe Altuntas , N. Defrance , Yvon Cordier et al.
Physica Status Solidi A (applications and materials science), 2017, 214 (4), 1600484, 5 p. ⟨10.1002/pssa.201600484⟩
Article dans une revue hal-03270098 v1

Photo-induced droop in blue to red light emitting InGaN/GaN single quantum wells structures

Thi Huong Ngo , Bernard Gil , Benjamin Damilano , Pierre Valvin , A Courville et al.
Journal of Applied Physics, 2017, 122, pp.063103. ⟨10.1063/1.4997608⟩
Article dans une revue hal-01573934 v1
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Photoluminescence properties of porous GaN and (Ga,In)N/GaN single quantum well made by selective area sublimation

B. Damilano , S. Vézian , J. Massies
Optics Express, 2017, 25 (26), pp.33243. ⟨10.1364/oe.25.033243⟩
Article dans une revue hal-03553879 v1

Internal quantum efficiency and Auger recombination in green, yellow and red InGaN-based light emitters grown along the polar direction

Thi Huong Ngo , Bernard Gil , B. Damilano , K. Lekhal , P. de Mierry
Superlattices and Microstructures, 2017, 103, pp.245. ⟨10.1016/j.spmi.2017.01.026⟩
Article dans une revue hal-01490590 v1
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III-Nitride-on-silicon microdisk lasers from the blue to the deep ultra-violet

Julien Selles , V. Crepel , I. Roland , M. El Kurdi , X. Checoury et al.
Applied Physics Letters, 2016, 109 (23), pp.231101. ⟨10.1063/1.4971357⟩
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High temperature electrical transport study of Si-doped AlN

Sylvie Contreras , Leszek Konczewicz , Jaweb Ben Messaoud , Herve Peyre , Mohamed Al Khalfioui et al.
Superlattices and Microstructures, 2016, 98, pp.253-258. ⟨10.1016/j.spmi.2016.08.038⟩
Article dans une revue hal-01425146 v1

First power performance demonstration of flexible AlGaN/GaN high electron mobility transistor

Sarra Mhedhbi , Marie Lesecq , Philippe Altuntas , N. Defrance , Etienne Okada et al.
IEEE Electron Device Letters, 2016, 37 (5), pp.553-555. ⟨10.1109/LED.2016.2542921⟩
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Impact of the bending on the electroluminescence of flexible InGaN/GaN light-emitting diodes

Gema Tabares Jimenez , Sarra Mhedhbi , Marie Lesecq , Benjamin Damilano , Julien Brault et al.
IEEE Photonics Technology Letters, 2016, 28 (15), pp.1661-1664. ⟨10.1109/LPT.2016.2563258⟩
Article dans une revue hal-03270097 v1

Auger effect in yellow light emitters based on InGaN–AlGaN–GaN quantum wells

Thi Huong Ngo , Bernard Gil , Pierre Valvin , Benjamin Damilano , K. Lekhal et al.
Japanese Journal of Applied Physics, 2016, 55, pp.05FG10. ⟨10.7567/JJAP.55.05FG10⟩
Article dans une revue hal-01382420 v1

Investigation of Al y Ga1− y N/Al0.5Ga0.5N quantum dot properties for the design of ultraviolet emitters

Julien Brault , Samuel Matta , Thi Huong Ngo , Maxim Korytov , Daniel Rosales et al.
Japanese Journal of Applied Physics, 2016, 55, pp.05FG06. ⟨10.7567/JJAP.55.05FG06⟩
Article dans une revue hal-01382466 v1
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Selective Area Sublimation: A Simple Top-down Route for GaN-Based Nanowire Fabrication

Benjamin Damilano , S. Vézian , J. Brault , B. Alloing , J. Massies
Nano Letters, 2016, 16 (3), pp.1863-1868. ⟨10.1021/acs.nanolett.5b04949⟩
Article dans une revue hal-05223993 v1

GaN films and GaN/AlGaN quantum wells grown by plasma assisted molecular beam epitaxy using a high density radical source

Yvon Cordier , Benjamin Damilano , Phannara Aing , Catherine Chaix , Florence Linez et al.
Journal of Crystal Growth, 2016, 433, pp.165-171. ⟨10.1016/j.jcrysgro.2015.10.017⟩
Article dans une revue istex hal-05311091 v1

Ultraviolet light emitting diodes using III-N quantum dots

Julien Brault , Samuel Matta , Thi Huong Ngo , Daniel Rosales , Mathieu Leroux et al.
Materials Science in Semiconductor Processing, 2016, 55, pp.95. ⟨10.1016/j.mssp.2016.02.014⟩
Article dans une revue istex hal-01390773 v1

Internal quantum efficiency in yellow-amber light emitting AlGaN-InGaN-GaN heterostructures

Thi Huong Ngo , Bernard Gil , Pierre Valvin , B. Damilano , Kaddour Lekhal et al.
Applied Physics Letters, 2015, 107, pp.122103. ⟨10.1063/1.4931624⟩
Article dans une revue hal-01203313 v1

Yellow–red emission from (Ga,In)N heterostructures

Benjamin Damilano , Bernard Gil
Journal of Physics D: Applied Physics, 2015, 48, pp.403001. ⟨10.1088/0022-3727/48/40/403001⟩
Article dans une revue hal-01206060 v1

Optical properties and structural investigations of (11-22)-oriented GaN/Al0.5Ga0.5N quantum wells grown by molecular beam epitaxy

Daniel Rosales , Bernard Gil , Thierry Bretagnon , Julien Brault , Philippe Vennegues et al.
Journal of Applied Physics, 2015, 118 (2), pp.024303. ⟨10.1063/1.4923306⟩
Article dans une revue hal-01238733 v1

Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission

K. Lekhal , B. Damilano , H. T. Ngo , Daniel Rosales , P. de Mierry et al.
Applied Physics Letters, 2015, 106 (14), pp.142101. ⟨10.1063/1.4917222⟩
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The universal photoluminescence behaviour of yellow light emitting (Ga,In)N/GaN heterostructures

Daniel Rosales , Thi Huong Ngo , Pierre Valvin , K Lekhal , B. Damilano et al.
Superlattices and Microstructures, 2014, 76, pp.9. ⟨10.1016/j.spmi.2014.09.017⟩
Article dans une revue istex hal-01101061 v1

Polar and semipolar GaN/Al0.5Ga0.5N nanostructures for UV light emitters

Julien Brault , Daniel Rosales , B. Damilano , Mathieu Leroux , A Courville et al.
Semiconductor Science and Technology, 2014, 29, pp.084001. ⟨10.1088/0268-1242/29/8/084001⟩
Article dans une revue hal-01025116 v1

Excitons in nitride heterostructures: From zero- to one-dimensional behavior

Daniel Rosales , Thierry Bretagnon , Bernard Gil , A Kahouli , Julien Brault et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2013, Physical Review B, 88, pp.125437. ⟨10.1103/PhysRevB.88.125437⟩
Article dans une revue hal-01905195 v1

Stress distribution of 12 μm thick crack free continuous GaN on patterned Si(110) substrate

T. Hossain , J. Wang , E. Frayssinet , S. Chenot , M. Leroux et al.
Physica Status Solidi C: Current Topics in Solid State Physics, 2013, 10 (3), pp.425 - 428. ⟨10.1002/pssc.201200556⟩
Article dans une revue istex hal-01871861 v1

Role of magnetic polarons in ferromagnetic GdN

F. Natali , B.J. Ruch , H. J. Trodahl , Do Le Binh , S. Vézian et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2013, 87 (3), pp.035202. ⟨10.1103/PhysRevB.87.035202⟩
Article dans une revue hal-01002353 v1
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Blue-green and white color tuning of monolithic light emitting diodes

Benjamin Damilano , Pierre Demolon , J. Brault , Thomas Huault , Franck Natali et al.
Journal of Applied Physics, 2010, 108 (7), pp.073115. ⟨10.1063/1.3490895⟩
Article dans une revue hal-05223848 v1

Asymmetric barrier composition GaN/(Ga,In)N/(Al,Ga)N quantum wells for yellow emission

Benjamin Damilano , Thomas Huault , Julien Brault , Denis Lefebvre , Jean Massies
Physica Status Solidi C: Current Topics in Solid State Physics, 2010, 7 (7-8), pp.2130-2132. ⟨10.1002/pssc.200983426⟩
Article dans une revue istex hal-05311116 v1

GaN/Al 0.5 Ga 0.5 N quantum dots and quantum dashes

Thomas Huault , Julien Brault , Franck Natali , Benjamin Damilano , Denis Lefebvre et al.
physica status solidi (b), 2009, 246 (4), pp.842-845. ⟨10.1002/pssb.200880614⟩
Article dans une revue istex hal-05311119 v1

Tailoring the shape of GaN/AlxGa1−xN nanostructures to extend their luminescence in the visible range

J. Brault , T. Huault , F. Natali , B. Damilano , D. Lefebvre et al.
Journal of Applied Physics, 2009, 105 (3), ⟨10.1063/1.3075899⟩
Article dans une revue hal-05311120 v1

Blue (Ga,In)N/GaN Light Emitting Diodes on Si(110) Substrate

Benjamin Damilano , Franck Natali , Julien Brault , Thomas Huault , Denis Lefebvre et al.
Applied Physics Express, 2008, 1, pp.121101. ⟨10.1143/APEX.1.121101⟩
Article dans une revue hal-05311128 v1

Blue-light emission from GaN∕Al0.5Ga0.5N quantum dots

T. Huault , J. Brault , F. Natali , B. Damilano , D. Lefebvre et al.
Applied Physics Letters, 2008, 92 (5), ⟨10.1063/1.2841825⟩
Article dans une revue hal-05311124 v1
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Investigation of Non-Radiative Processes in InAs/(Ga,In)(N,As) Quantum Dots.

Maxime Hugues , Mirja Richter , Jean-Michel Chauveau , Benjamin Damilano , Jean-Yves Duboz et al.
Japanese Journal of Applied Physics, 2007, 46 (4L), pp.L317. ⟨10.1143/JJAP.46.L317⟩
Article dans une revue hal-01304760 v1

Radiative lifetime of a single electron-hole pair in GaN∕AlN quantum dots.

Thierry Bretagnon , Pierre Lefebvre , Pierre Valvin , Richard Bardoux , Thierry Guillet et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2006, 73 (11), pp.113304. ⟨10.1103/PhysRevB.73.113304⟩
Article dans une revue hal-01304534 v1

Light-ion beam for microelectronic applications

L. Hirsch , P. Tardy , G. Wantz , N. Huby , P. Moretto et al.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2005, 240, pp.265-270. ⟨10.1016/j.nimb.2005.06.127⟩
Article dans une revue istex in2p3-00024484 v1

Light-ion beam analysis for microelectronic applications

Lionel Hirsch , Pascal Tardy , Guillaume Wantz , Nolwen Huby , P. Moretto et al.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2005, 240, pp.1
Article dans une revue hal-00183524 v1

Photoluminescence energy and linewidth in GaN/AlN stackings of quantum dot planes.

Sokratis Kalliakos , Thierry Bretagnon , Pierre Lefebvre , Thierry Taliercio , Bernard Gil et al.
Journal of Applied Physics, 2004, 96 (1), pp.180. ⟨10.1063/1.1753085⟩
Article dans une revue hal-01303942 v1

Time dependence of the photoluminescence of GaN/AlN quantum dots under high photoexcitation.

Thierry Bretagnon , Sokratis Kalliakos , Pierre Lefebvre , Pierre Valvin , Bernard Gil et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2003, 68 (20), pp.205301. ⟨10.1103/PhysRevB.68.205301⟩
Article dans une revue hal-01303926 v1

MBE growth of AlGaN/GaN HEMTs on resistive Si (111) substrate with RF small signal and power performances

Y. Cordier , F. Semond , P. Lorenzini , N. Grandjean , F. Natali et al.
Journal of Crystal Growth, 2003, 251, pp.811-815
Article dans une revue hal-00146661 v1

Field distribution and collection efficiency in an AlGaN Metal-Semiconductor-Metal detector

Lionel Hirsch , P. Moretto , J.Y. Duboz , J.L. Reverchon , B. Damilano et al.
J. of Appl. Phys, 2002, 1, pp.1
Article dans une revue hal-00183530 v1

Large size dependence of exciton-longitudinal-optical-phonon coupling in nitride-based quantum wells and quantum boxes.

Sokratis Kalliakos , Xuebin Zhang , Thierry Taliercio , Pierre Lefebvre , Bernard Gil et al.
Applied Physics Letters, 2002, 80 (3), pp.428. ⟨10.1063/1.1433165⟩
Article dans une revue hal-01303257 v1

Effects of GaAlN barriers and of dimensionality on optical recombination processes in InGaN quantum wells and quantum boxes.

Pierre Lefebvre , Thierry Taliercio , Aurélien Morel , Jacques Allègre , Mathieu Gallart et al.
Applied Physics Letters, 2001, 78 (11), pp.1538. ⟨10.1063/1.1352664⟩
Article dans une revue hal-01303205 v1

Nuclear microprobe analysis of GaN based light emitting diodes

Lionel Hirsch , Albert-Serge Barriere , P. Moretto , B. Damilano , N. Grandjean et al.
Physica Status Solidi A (applications and materials science), 2001, 188, pp.1
Article dans une revue hal-00183545 v1

High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy.

Pierre Lefebvre , Aurélien Morel , Mathieu Gallart , Thierry Taliercio , Jacques Allègre et al.
Applied Physics Letters, 2001, 78 (9), pp.1252. ⟨10.1063/1.1351517⟩
Article dans une revue hal-01303203 v1

Optical properties of GaN epilayers and GaN/AlGaN quantum wells grown by molecular beam epitaxy on GaN(0001) single crystal substrate.

Nicolas Grandjean , Benjamin Damilano , Jean Massies , Gérard Neu , M Teissere et al.
Journal of Applied Physics, 2000, 88 (1), pp.183. ⟨10.1063/1.373640⟩
Article dans une revue hal-01302893 v1

Fluides quantiques d'excitons indirects dans des puits quantiques GaN/AlGaN : vers une condensation dans l'état sombre

T. Guillet , R. Aristegui , C. Brimont , B. Damilano , M. Vladimirova
Journées Nano, Micro et Optoélectronique (JNMO 2024), Oct 2024, Sète, France
Communication dans un congrès hal-04877745 v1

Strain relaxation versus luminescence in (0001) InGaN/GaN quantum wells for emission beyond the green range

Magali Morales , Pierre Ruterana , Marie-Pierre Chauvat , Benjamin Damilano , Bernard Gil
Gallium Nitride Materials and Devices XIX, Jan 2024, San Francisco, United States. pp.PC128860D, ⟨10.1117/12.3000165⟩
Communication dans un congrès hal-04657284 v1

Origine du twist entre les îlots de croissance de semi-conducteurs tétra-coordonnés hétéroépitaxiés selon des directions hexagonales.

Philippe Vennéguès , Ludovic Largeau , Virginie Brändli , Benjamin Damilano , Karine Tavernier et al.
Conférence MATEPI 2023, Jul 2023, Paris, France
Communication dans un congrès hal-04225165 v1
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Thin-film blue light-emitting diodes for flexible device operation down to a millimetric radius of curvature

Jules Duraz , Edmond Cambril , Etienne Herth , Éric Frayssinet , Benjamin Damilano et al.
Compound Semiconductor Week 2023 (CSW 2023), May 2023, Jeju, South Korea
Communication dans un congrès hal-04683266 v1
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FABRICATION AND CHARACTERIZATION TECHNIQUES TO STUDY FLEXIBLE MICRO LIGHT-EMITTING DIODES WITH A MILLIMETRIC RADIUS OF CURVATURE

Jules Duraz , Edmond Cambril , Etienne Herth , Benjamin Damilano , Suresh Sundaram et al.
Journées Nationales sur les Technologies Emergentes en micro-nanofabrication (JNTE), Nov 2022, Besançon, France
Communication dans un congrès hal-04683281 v1

Electrical control of excitons in GaN/(Al,Ga)N quantum wells

Rémi Aristegui , François Chiaruttini , Benoit Jouault , Christelle Brimont , Thierry Guillet et al.
International Workshop on Nitride Semiconductors (IWN 2022), Oct 2022, Berlin, Germany
Communication dans un congrès hal-04874254 v1
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DUV LEDs based on AlGaN quantum dots

Julien Brault , Mohamed Al Khalfioui , Mathieu Leroux , Samuel Matta , Thi Huong Ngo et al.
SPIE OPTO, Mar 2021, Online Only, United States. pp.16, ⟨10.1117/12.2576135⟩
Communication dans un congrès hal-03366593 v1

Analyzing polarized metasurface holograms by vectorial ptychography

Arthur Baroni , Qinghua Song , Rajath Sawant , Peinan Ni , Virginie Brandli et al.
Focus on Microscopy 2021 (FOM2021), Mar 2021, online, Netherlands
Communication dans un congrès hal-03183699 v1

Complexity of dipolar exciton Mott transition in GaN/(AlGa)N nanostructures

Masha Vladimirova , François Chiaruttini , Thierry Guillet , Christelle Brimont , Denis Scalbert et al.
Optics of Excitons in Confined Systems, University of Dortmund, Aug 2021, Dortmund, Germany
Communication dans un congrès hal-04878035 v1

Vectorial Hologram Based on Pixelated Metasurface

Qinghua Song , Arthur Baroni , Rajath Sawant , Peinan Ni , Virginie Brandli et al.
CLEO: Applications and Technology 2020, OSA / IEEE, May 2020, Wahington, DC (virtual), United States. pp.ATh4I.6, ⟨10.1364/CLEO_AT.2020.ATh4I.6⟩
Communication dans un congrès hal-02962142 v1

Analyzing full-polarized metasurface holograms by vectorial ptychography

Arthur Baroni , Virginie Chamard , Qinghua Song , Rajath Sawant , Peinan Ni et al.
Focus On Microscopy 2020 (FOM 2020) (Canceled Covid-19), Apr 2020, Osaka, Japan
Communication dans un congrès hal-02537380 v1

Control Over Dipolar Exciton Fluids in GaN/(AlGa)N Nanostructures

Maria Vladimirova , François Chiaruttini , Thierry Guillet , Christelle Brimont , Benoit Jouault et al.
13th International Conference on Nitride Semiconductors (ICNS-13), Jul 2019, Bellevue, United States
Communication dans un congrès hal-02466858 v1

Controlled and thermalized indirect exciton fluids in a GaN/AlGaN quantum well with electrostatic traps

Thierry Guillet , François Chiaruttini , Christelle Brimont , Benoit Jouault , Pierre Lefebvre et al.
20th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN19), Jul 2019, Suzdal, Russia
Communication dans un congrès hal-04874180 v1

Control over dipolar exciton fluids in GaN/(AlGa)N nanostructures

Maria Vladimirova , François Chiaruttini , Thierry Guillet , Christelle Brimont , Pierre Lefebvre et al.
5th INTERNATIONAL CONFERENCE ON QUANTUM TECHNOLOGIES, Jul 2019, Moscou, Russia
Communication dans un congrès hal-02466887 v1

Electrostatic trapping of indirect excitons in GaN/AlGaN quantum wells.

François Chiaruttini , Thierry Guillet , Christelle Brimont , Thierry Bretagnon , Laetitia Doyennette et al.
International Conference on the Physics of Semiconductors, Jul 2018, Montpellier, France
Communication dans un congrès hal-01907806 v1

Temperature dependence of the gain in InGaN/GaN quantum wells microlasers grown by MOCVD

Christelle Brimont , Laetitia Doyennette , Farsane Tabataba-Vakili , I. Roland , M. El Kurdi et al.
International Workshop on Nitride Semiconductors 2018 (IWN 2018), Nov 2018, Kanazawa, Japan
Communication dans un congrès hal-01952415 v1

Trapping dynamics of indirect excitons into electrostatic traps in GaN quantum wells.

Thierry Guillet , François Chiaruttini , Christelle Brimont , Thierry Bretagnon , Laetitia Doyennette et al.
TERAMETANANO-3: Terahertz Emission, Metamaterials and Nanophotonics., Alexey Kavokin - Jerome Tignon - Timothy C. H. Liew - Pavel Belov, Mar 2018, Uxmal, Mexico
Communication dans un congrès hal-01908823 v1

Phase transition of indirect excitons in GaN quantum wells.

Thierry Guillet , François Chiaruttini , Christelle Brimont , Thierry Bretagnon , Laetitia Doyennette et al.
International Workshop on Nitride semiconductors - IWN2018., Nov 2018, Kanazawa, Japan
Communication dans un congrès hal-01910225 v1

Indirect Excitons in Group III-Nitride-Based Quantum Wells.

Pierre Lefebvre , Benoit Jouault , Thierry Guillet , Christelle Brimont , Pierre Valvin et al.
CIMTEC 2018 - 14th Intl Conference on Modern Materials and Technologies - 8th Forum on New Materials, Shuji NAKAMURA; University of California; USA (Honorary Chair) Michele MUCCINI; CNR-ISMN; Italy (C, Jun 2018, Pérouse, Italy
Communication dans un congrès hal-01908795 v1

High Temperature Annealing of MBE-grown Mg-doped GaN

Sylvie Contreras , Leszek Konczewicz , Herve Peyre , Sandrine Juillaguet , M. Al Khalfioui et al.
33RD INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, 2017, Peking, China. pp.UNSP 012018, ⟨10.1088/1742-6596/864/1/012018⟩
Communication dans un congrès hal-01935176 v1

On the nature of light emission in polar GaN/(AlGa)N quantum wells

Maria Vladimirova , Thierry Guillet , Christelle Brimont , Denis Scalbert , Benoit Jouault et al.
International Conference on Hybrid Photonics and Materials, Sep 2017, Miconos, Greece
Communication dans un congrès hal-01932705 v1

Homogeneous versus inhomogeneous broadening of the photoluminescence in polar GaN/(AlGa)N quantum wells.

Masha Vladimirova , Thierry Guillet , Benoit Jouault , Christelle Brimont , Denis Scalbert et al.
International Conference on Physics of Light-Matter Coupling in Nanostructures – PLMCN18., Sven Höfling, Alexei Kavokin, Jul 2017, Würtzburg, Germany
Communication dans un congrès hal-01908565 v1

Nitride-on-silicon platform for UV-visible photonics with integrated microlaser sources.

Julien Sellés , Thierry Guillet , V. Crepel , B. Gayral , B. Damilano et al.
META’17, the 8th International Conference on Metamaterials, Photonic Crystals and Plasmonics, Jul 2017, Incheon - Seoul, South Korea
Communication dans un congrès hal-01952364 v1

Indirect excitons in polar GaN/(AlGa)N quantum wells

Maria Vladimirova , Thierry Guillet , Christelle Brimont , Pierre Lefebvre , Thierry Bretagnon et al.
International school/colloquium in honor of E. Gross, Oct 2017, St-Petersbourg, Russia
Communication dans un congrès hal-01932812 v1

Nitride-on-Silicon microdisk lasers covering the blue to UV-C spectral range

Julien Sellés , V. Crepel , Christelle Brimont , Bruno Gayral , Meletios Mexis et al.
International Workshop on Nitride Semiconductors (IWN 2016), Oct 2016, Orlando, United States
Communication dans un congrès hal-01951054 v1

Photoluminescence behavior of amber light emitting GaInN-GaN heterostructures

Thi Huong Ngo , Daniel Rosales , Bernard Gil , Pierre Valvin , Benjamin Damilano et al.
GALLIUM NITRIDE MATERIALS AND DEVICES X, 2015, san francisco, United States. pp.93630K, ⟨10.1117/12.2076208⟩
Communication dans un congrès hal-01238745 v1

Optical properties of small GaN/Al0.5Ga0.5N quantum dots grown on (11-22) GaN templates

Julien Selles , Daniel Rosales , Bernard Gil , Guillaume Cassabois , Thierry Guillet et al.
GALLIUM NITRIDE MATERIALS AND DEVICES X, 2015, San Francisco, United States. pp.93630Z, ⟨10.1117/12.2076284⟩
Communication dans un congrès hal-01132346 v1

Growth of GaN Nanostructures with Polar and Semipolar Orientations for the Fabrication of UV LEDs

Julien Brault , B. Damilano , Daniel Rosales , Thierry Bretagnon , Bernard Gil
SPIE GALLIUM NITRIDE MATERIALS AND DEVICES IX, Feb 2014, san francisco, United States. pp.89860Z, ⟨10.1117/12.2036924⟩
Communication dans un congrès hal-01021435 v1

Radiative lifetime in wurtzite GaN/AlN quantum dots.

Richard Bardoux , T. Bretagnon , Thierry Guillet , P. Lefebvre , T. Taliercio et al.
International Symposium on Blue Laser and Light Emitting Diodes (ISBLED06), May 2006, Montpellier, France. pp.183, ⟨10.1002/pssc.200673559⟩
Communication dans un congrès hal-00389911 v1

Carrier recombination dynamics and internal electric fields in GaN/AlN self-organized quantum dots.

Pierre Lefebvre , Thierry Bretagnon , Thierry Taliercio , Thierry Guillet , Bernard Gil et al.
6th International Conference on Nitride Semiconductors (ICNS6). , Aug 2006, Brème, Germany
Communication dans un congrès hal-01309937 v1

Nontrivial carrier recombination dynamics and optical properties of over-excited GaN/AlN quantum dots

S. Kalliakos , Thierry Bretagnon , Pierre Lefebvre , Sandrine Juillaguet , T. Taliercio et al.
5th International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2004), Mar 2004, Gyeongju, South Korea. pp.2779-2782, ⟨10.1002/pssb.200404996⟩
Communication dans un congrès istex hal-00543738 v1

Carrier Recombination Dynamics of Over-Excited Hexagonal GaN/AlN Quantum Dots.

Pierre Lefebvre , Sokratis Kalliakos , Thierry Bretagnon , Thierry Taliercio , Bernard Gil et al.
E-MRS Spring Meeting - Symposium L., European Materials Research Society, May 2004, Strasbourg, France
Communication dans un congrès hal-01310227 v1

Two-dimensional “pseudo-donor–acceptor-pairs” model of recombination dynamics in InGaN/GaN quantum wells

Aurélien Morel , Pierre Lefebvre , Thierry Taliercio , Bernard Gil , Nicolas Grandjean et al.
International Conference on Superlattices, Nano-structures and Nano-devices - ICSNN 2002., Jul 2002, Toulouse, France. pp.64-67, ⟨10.1016/S1386-9477(02)00762-2⟩
Communication dans un congrès istex hal-01319596 v1

Optical properties of GaN/AlN quantum boxes under high photo-excitation

S. Kalliakos , Thierry Bretagnon , Pierre Lefebvre , Sandrine Juillaguet , T. Taliercio et al.
5th International Conference on Nitride Semiconductors (ICNS-5), Axel Hoffmann, May 2003, Nara, Japan. pp.2666-2669, ⟨10.1002/pssc.200303270⟩
Communication dans un congrès hal-00543736 v1

MBE growth of high quality AlGaN/GaN HEMTs on resistive Si(111) substrate with RF small signal and power performances

Y. Cordier , F. Semond , P. Lorenzini , N. Grandjean , F. Natali et al.
2002, pp.99-100
Communication dans un congrès hal-00149696 v1

AlGaN/GaN HEMTs on resistive Si(111) substrate : from material assessment to RF power performances

Y. Cordier , F. Semond , P. Lorenzini , N. Grandjean , F. Natali et al.
2002, pp.61-64
Communication dans un congrès hal-00149701 v1

Influence of dipole length on spatio-temporal behavior of excitonic fluids hosted by GaN/(AlGa)N QWs

Rémi Aristegui , Thierry Guillet , Christelle Brimont , Benjamin Damilano , Maria Vladimirova
Physics of Excitons and Polaritons in Semiconductors (PEPS 2024), Aug 2024, Reykyavik, Iceland
Poster de conférence hal-04880367 v1

Tuning GaN/AlGaN quantum well emission by deposition of Few-Layer Graphene and Nickel/Gold films

Christelle Brimont , Rémi Aristegui , Pierre Lefebvre , Thierry Guillet , Maria Vladimirova et al.
ICNS -14th International Conference on Nitride Semiconductors, Nov 2023, Fukuoka, Japan.
Poster de conférence hal-04793643 v1

Probing the Mott transition of indirect excitons in GaN/(AlGa)N heterostructures

François Chiaruttini , Christelle Brimont , Denis Scalbert , Steeve Cronenberger , Pierre Lefebvre et al.
International Workshop on Nitride Semiconductors (IWN 2022), Oct 2022, Berlin, Germany
Poster de conférence hal-04874207 v1

Gain modeling in InGaN / GaN microdisk lasers

Christelle BRIMONT , François Chiaruttini , Thierry Guillet , Farsane Tabataba-Vakili , Iannis Roland et al.
ICNS-13 — 13th International Conference on Nitride Semiconductors 2019, Jul 2019, Seattle (USA), Washington, United States
Poster de conférence hal-04793557 v1

Comparison of UV-C and blue emitting
nitride-on-silicon microdisk lasers

Julien Sellés , Thierry Guillet , V. Crepel , B. Gayral , B. Damilano et al.
34th International Conference on the Physics of Semiconductors (ICPS), Jul 2018, Montpellier, France
Poster de conférence hal-01952385 v1

Effect of Temperature on Electrical Transport Properties of MBE grown Mg-doped GaN and AlGaN

Sylvie Contreras , Leszek Konczewicz , Sandrine Juillaguet , Herve Peyre , Mohamed Al Khalfioui et al.
International Workshop on Nitride Semiconductor, Nov 2018, Kanazawa, Japan
Poster de conférence hal-01937531 v1

Photoluminescence study of Mg-doped GaN and AlxGa1-xN (x<0.4) grown by molecular epitaxy

Julien Brault , Mathieu Leroux , Samuel Matta , Mohamed Al Khalfioui , Benjamin Damilano et al.
International Workshop on Nitride Semiconductor, Nov 2018, Kanazawa, Japan
Poster de conférence hal-01937537 v1

Defect-free InGaN nanowires on silicon whatever the indium composition

Mohammed Zeghouane , Elissa Roche , Geoffrey Avit , Yamina Andre , Catherine Bougerol et al.
RÉUNION PLÉNIÈRE DU GDR PULSE 2017, Oct 2017, Paris, France
Poster de conférence hal-01659715 v1

Quantum Dot based UV Light Emitting Diodes

Julien Brault , Samuel Matta , Mohamed Al Khalfioui , Mathieu Leroux , Benjamin Damilano et al.
12th international conference on nitride semiconductors, Jul 2017, STRASBOURG, France
Poster de conférence hal-01937757 v1

Defect-free InGaN nanowires on silicon whatever the indium composition

Geoffrey Avit , Elissa Roche , Mohammed Zeghouane , Yamina Andre , Catherine Bougerol et al.
ICNS 12 - 12th International Conference on Nitride Semiconductors, Jul 2017, Strasbourg, France
Poster de conférence hal-01659728 v1

On the nature of light emission in polar GaN/(AlGa)N quantum wells.

Christelle Brimont , Thierry Guillet , Denis Scalbert , Benoit Jouault , Pierre Valvin et al.
12th International Conference on Nitride Semiconductors – ICNS12., Jul 2017, Strasbourg, France.
Poster de conférence hal-01907860 v1

Malices et fourberies des boîtes quantiques GaN/AlN.

Pierre Lefebvre , Thierry Bretagnon , Thierry Taliercio , Thierry Guillet , Bernard Gil et al.
Journées Nationales Micro- et Opto-électronique – Xèmes JNMO., Jun 2004, La Grande Motte, France.
Poster de conférence hal-01312258 v1

Continuous-wave versus time-resolved photo-luminescence of GaN/AlN quantum dots.

Pierre Lefebvre , Thierry Bretagnon , Thierry Taliercio , Thierry Guillet , Bernard Gil et al.
Summer School "Semiconductor Quantum Dots: Physics and Devices"., Sep 2004, Ascona, Switzerland
Poster de conférence hal-01312253 v1

Carrier recombination dynamics in GaN/AlN quantum dots.

Thierry Bretagnon , Pierre Lefebvre , Pierre Valvin , Thierry Taliercio , Thierry Guillet et al.
EXMATEC'04 - 7th Int. Conf. on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies., Jun 2004, Montpellier, France
Poster de conférence hal-01310832 v1