Benjamin Damilano
161
Documents
Publications
Publications
Fluides quantiques d'excitons indirects dans des puits quantiques GaN/AlGaN : vers une condensation dans l'état sombreJournées Nano, Micro et Optoélectronique (JNMO 2024), Oct 2024, Sète, France
Communication dans un congrès
hal-04877745
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Strain relaxation versus luminescence in (0001) InGaN/GaN quantum wells for emission beyond the green rangeGallium Nitride Materials and Devices XIX, Jan 2024, San Francisco, United States. pp.PC128860D, ⟨10.1117/12.3000165⟩
Communication dans un congrès
hal-04657284
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Origine du twist entre les îlots de croissance de semi-conducteurs tétra-coordonnés hétéroépitaxiés selon des directions hexagonales.Conférence MATEPI 2023, Jul 2023, Paris, France
Communication dans un congrès
hal-04225165
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Thin-film blue light-emitting diodes for flexible device operation down to a millimetric radius of curvatureCompound Semiconductor Week 2023 (CSW 2023), May 2023, Jeju, South Korea
Communication dans un congrès
hal-04683266
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FABRICATION AND CHARACTERIZATION TECHNIQUES TO STUDY FLEXIBLE MICRO LIGHT-EMITTING DIODES WITH A MILLIMETRIC RADIUS OF CURVATUREJournées Nationales sur les Technologies Emergentes en micro-nanofabrication (JNTE), Nov 2022, Besançon, France
Communication dans un congrès
hal-04683281
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Electrical control of excitons in GaN/(Al,Ga)N quantum wellsInternational Workshop on Nitride Semiconductors (IWN 2022), Oct 2022, Berlin, Germany
Communication dans un congrès
hal-04874254
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DUV LEDs based on AlGaN quantum dotsSPIE OPTO, Mar 2021, Online Only, United States. pp.16, ⟨10.1117/12.2576135⟩
Communication dans un congrès
hal-03366593
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Analyzing polarized metasurface holograms by vectorial ptychographyFocus on Microscopy 2021 (FOM2021), Mar 2021, online, Netherlands
Communication dans un congrès
hal-03183699
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Complexity of dipolar exciton Mott transition in GaN/(AlGa)N nanostructuresOptics of Excitons in Confined Systems, University of Dortmund, Aug 2021, Dortmund, Germany
Communication dans un congrès
hal-04878035
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Vectorial Hologram Based on Pixelated MetasurfaceCLEO: Applications and Technology 2020, OSA / IEEE, May 2020, Wahington, DC (virtual), United States. pp.ATh4I.6, ⟨10.1364/CLEO_AT.2020.ATh4I.6⟩
Communication dans un congrès
hal-02962142
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Analyzing full-polarized metasurface holograms by vectorial ptychographyFocus On Microscopy 2020 (FOM 2020) (Canceled Covid-19), Apr 2020, Osaka, Japan
Communication dans un congrès
hal-02537380
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Control Over Dipolar Exciton Fluids in GaN/(AlGa)N Nanostructures13th International Conference on Nitride Semiconductors (ICNS-13), Jul 2019, Bellevue, United States
Communication dans un congrès
hal-02466858
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Controlled and thermalized indirect exciton fluids in a GaN/AlGaN quantum well with electrostatic traps20th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN19), Jul 2019, Suzdal, Russia
Communication dans un congrès
hal-04874180
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Control over dipolar exciton fluids in GaN/(AlGa)N nanostructures5th INTERNATIONAL CONFERENCE ON QUANTUM TECHNOLOGIES, Jul 2019, Moscou, Russia
Communication dans un congrès
hal-02466887
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Electrostatic trapping of indirect excitons in GaN/AlGaN quantum wells.International Conference on the Physics of Semiconductors, Jul 2018, Montpellier, France
Communication dans un congrès
hal-01907806
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Temperature dependence of the gain in InGaN/GaN quantum wells microlasers grown by MOCVDInternational Workshop on Nitride Semiconductors 2018 (IWN 2018), Nov 2018, Kanazawa, Japan
Communication dans un congrès
hal-01952415
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Trapping dynamics of indirect excitons into electrostatic traps in GaN quantum wells.TERAMETANANO-3: Terahertz Emission, Metamaterials and Nanophotonics., Alexey Kavokin - Jerome Tignon - Timothy C. H. Liew - Pavel Belov, Mar 2018, Uxmal, Mexico
Communication dans un congrès
hal-01908823
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Phase transition of indirect excitons in GaN quantum wells.International Workshop on Nitride semiconductors - IWN2018., Nov 2018, Kanazawa, Japan
Communication dans un congrès
hal-01910225
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Indirect Excitons in Group III-Nitride-Based Quantum Wells.CIMTEC 2018 - 14th Intl Conference on Modern Materials and Technologies - 8th Forum on New Materials, Shuji NAKAMURA; University of California; USA (Honorary Chair) Michele MUCCINI; CNR-ISMN; Italy (C, Jun 2018, Pérouse, Italy
Communication dans un congrès
hal-01908795
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High Temperature Annealing of MBE-grown Mg-doped GaN33RD INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, 2017, Peking, China. pp.UNSP 012018, ⟨10.1088/1742-6596/864/1/012018⟩
Communication dans un congrès
hal-01935176
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On the nature of light emission in polar GaN/(AlGa)N quantum wellsInternational Conference on Hybrid Photonics and Materials, Sep 2017, Miconos, Greece
Communication dans un congrès
hal-01932705
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Homogeneous versus inhomogeneous broadening of the photoluminescence in polar GaN/(AlGa)N quantum wells.International Conference on Physics of Light-Matter Coupling in Nanostructures – PLMCN18., Sven Höfling, Alexei Kavokin, Jul 2017, Würtzburg, Germany
Communication dans un congrès
hal-01908565
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Nitride-on-silicon platform for UV-visible photonics with integrated microlaser sources.META’17, the 8th International Conference on Metamaterials, Photonic Crystals and Plasmonics, Jul 2017, Incheon - Seoul, South Korea
Communication dans un congrès
hal-01952364
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Indirect excitons in polar GaN/(AlGa)N quantum wellsInternational school/colloquium in honor of E. Gross, Oct 2017, St-Petersbourg, Russia
Communication dans un congrès
hal-01932812
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Nitride-on-Silicon microdisk lasers covering the blue to UV-C spectral rangeInternational Workshop on Nitride Semiconductors (IWN 2016), Oct 2016, Orlando, United States
Communication dans un congrès
hal-01951054
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Photoluminescence behavior of amber light emitting GaInN-GaN heterostructuresGALLIUM NITRIDE MATERIALS AND DEVICES X, 2015, san francisco, United States. pp.93630K, ⟨10.1117/12.2076208⟩
Communication dans un congrès
hal-01238745
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Optical properties of small GaN/Al0.5Ga0.5N quantum dots grown on (11-22) GaN templatesGALLIUM NITRIDE MATERIALS AND DEVICES X, 2015, San Francisco, United States. pp.93630Z, ⟨10.1117/12.2076284⟩
Communication dans un congrès
hal-01132346
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Growth of GaN Nanostructures with Polar and Semipolar Orientations for the Fabrication of UV LEDsSPIE GALLIUM NITRIDE MATERIALS AND DEVICES IX, Feb 2014, san francisco, United States. pp.89860Z, ⟨10.1117/12.2036924⟩
Communication dans un congrès
hal-01021435
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Radiative lifetime in wurtzite GaN/AlN quantum dots.International Symposium on Blue Laser and Light Emitting Diodes (ISBLED06), May 2006, Montpellier, France. pp.183, ⟨10.1002/pssc.200673559⟩
Communication dans un congrès
hal-00389911
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Carrier recombination dynamics and internal electric fields in GaN/AlN self-organized quantum dots.6th International Conference on Nitride Semiconductors (ICNS6). , Aug 2006, Brème, Germany
Communication dans un congrès
hal-01309937
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Nontrivial carrier recombination dynamics and optical properties of over-excited GaN/AlN quantum dots5th International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2004), Mar 2004, Gyeongju, South Korea. pp.2779-2782, ⟨10.1002/pssb.200404996⟩
Communication dans un congrès
istex
hal-00543738
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Carrier Recombination Dynamics of Over-Excited Hexagonal GaN/AlN Quantum Dots.E-MRS Spring Meeting - Symposium L., European Materials Research Society, May 2004, Strasbourg, France
Communication dans un congrès
hal-01310227
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Two-dimensional “pseudo-donor–acceptor-pairs” model of recombination dynamics in InGaN/GaN quantum wellsInternational Conference on Superlattices, Nano-structures and Nano-devices - ICSNN 2002., Jul 2002, Toulouse, France. pp.64-67, ⟨10.1016/S1386-9477(02)00762-2⟩
Communication dans un congrès
istex
hal-01319596
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Optical properties of GaN/AlN quantum boxes under high photo-excitation5th International Conference on Nitride Semiconductors (ICNS-5), Axel Hoffmann, May 2003, Nara, Japan. pp.2666-2669, ⟨10.1002/pssc.200303270⟩
Communication dans un congrès
hal-00543736
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MBE growth of high quality AlGaN/GaN HEMTs on resistive Si(111) substrate with RF small signal and power performances2002, pp.99-100
Communication dans un congrès
hal-00149696
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AlGaN/GaN HEMTs on resistive Si(111) substrate : from material assessment to RF power performances2002, pp.61-64
Communication dans un congrès
hal-00149701
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Influence of dipole length on spatio-temporal behavior of excitonic fluids hosted by GaN/(AlGa)N QWsPhysics of Excitons and Polaritons in Semiconductors (PEPS 2024), Aug 2024, Reykyavik, Iceland
Poster de conférence
hal-04880367
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Tuning GaN/AlGaN quantum well emission by deposition of Few-Layer Graphene and Nickel/Gold filmsICNS -14th International Conference on Nitride Semiconductors, Nov 2023, Fukuoka, Japan.
Poster de conférence
hal-04793643
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Probing the Mott transition of indirect excitons in GaN/(AlGa)N heterostructuresInternational Workshop on Nitride Semiconductors (IWN 2022), Oct 2022, Berlin, Germany
Poster de conférence
hal-04874207
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Gain modeling in InGaN / GaN microdisk lasersICNS-13 — 13th International Conference on Nitride Semiconductors 2019, Jul 2019, Seattle (USA), Washington, United States
Poster de conférence
hal-04793557
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Comparison of UV-C and blue emitting nitride-on-silicon microdisk lasers34th International Conference on the Physics of Semiconductors (ICPS), Jul 2018, Montpellier, France
Poster de conférence
hal-01952385
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Effect of Temperature on Electrical Transport Properties of MBE grown Mg-doped GaN and AlGaNInternational Workshop on Nitride Semiconductor, Nov 2018, Kanazawa, Japan
Poster de conférence
hal-01937531
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Photoluminescence study of Mg-doped GaN and AlxGa1-xN (x<0.4) grown by molecular epitaxyInternational Workshop on Nitride Semiconductor, Nov 2018, Kanazawa, Japan
Poster de conférence
hal-01937537
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Defect-free InGaN nanowires on silicon whatever the indium compositionRÉUNION PLÉNIÈRE DU GDR PULSE 2017, Oct 2017, Paris, France
Poster de conférence
hal-01659715
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Quantum Dot based UV Light Emitting Diodes12th international conference on nitride semiconductors, Jul 2017, STRASBOURG, France
Poster de conférence
hal-01937757
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Defect-free InGaN nanowires on silicon whatever the indium compositionICNS 12 - 12th International Conference on Nitride Semiconductors, Jul 2017, Strasbourg, France
Poster de conférence
hal-01659728
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On the nature of light emission in polar GaN/(AlGa)N quantum wells.12th International Conference on Nitride Semiconductors – ICNS12., Jul 2017, Strasbourg, France.
Poster de conférence
hal-01907860
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Malices et fourberies des boîtes quantiques GaN/AlN.Journées Nationales Micro- et Opto-électronique – Xèmes JNMO., Jun 2004, La Grande Motte, France.
Poster de conférence
hal-01312258
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Continuous-wave versus time-resolved photo-luminescence of GaN/AlN quantum dots.Summer School "Semiconductor Quantum Dots: Physics and Devices"., Sep 2004, Ascona, Switzerland
Poster de conférence
hal-01312253
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Carrier recombination dynamics in GaN/AlN quantum dots.EXMATEC'04 - 7th Int. Conf. on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies., Jun 2004, Montpellier, France
Poster de conférence
hal-01310832
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Device and method for providing illumination for total-internal-reflection fluorescence microscopy using opaque maskFrance, Patent n° : US2019285547 (A1). 2019
Brevet
hal-04141317
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