Bilal BEYDOUN
Domaines de recherche
Compétences
Publications
Publications
A solution for channel electron migration in normally-off MIS-HEMT with buried fluorine ions29th International Conference on Microelectronics (ICM 2017), Dec 2017, Beirut, Lebanon. ⟨10.1109/ICM.2017.8268868⟩ |
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HEMT with fluorine implanted below the AlGaN/GaN interface for normally-off operation20th LAAS International Science Conference Advanced Research for Better Tomorrow, Mar 2014, Hadath, Lebanon |
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P-doped region below the AlGaN/GaN interface for normally-off HEMT16th Conference on Power Electronics and Applications, EPE’14-ECCE Europe, Aug 2014, Lappeenranta, Finland. pp.1 - 8, ⟨10.1109/EPE.2014.6910769⟩ |
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Hybrid normally-off AlGaN/GaN HEMT using GIT technique with a p-region below the channelCSW 2014, May 2014, Montpellier, France |
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Normally-Off AlGaN/GaN HEMT using fluorine implantation below the channelSymposium en Génie Electrique 2014 (SGE 2014), Jul 2014, Cachan, France |
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Un interrupteur GaN HEMT normally-off grâce à des ions fluor implantés sous l'interface AlGaN/GaNSymposium de Génie Électrique 2014, Jul 2014, Cachan, France |
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Scalable normally-off MIS-HEMT using Fluorine implantation below the channelSPEEDAM 2014, Jun 2014, Ischia, Italy |
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New concepts for normally-off power Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT)Micro and nanotechnologies/Microelectronics. Universite Toulouse III Paul Sabatier, 2014. English. ⟨NNT : ⟩ |
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Simulation et conception des transistors M.O.S de puissanceElectronique. Unversité Paul Sabatier de Toulouse, 1994. Français. ⟨NNT : 1994TOU30163⟩ |
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Caractérisation et Simulation des Transistors MOS sous Stress Electrique et ThermiqueSciences de l'ingénieur [physics]. Université Paul Sabatier (Toulouse 3), 2007 |