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Investigation of DC and low frequency noise parameters of junctionless GAA Si VNW pMOSFETs in the temperature range from 80 K to 340 K
A. Tahiat
,
B. Cretu
,
A. Veloso
,
E. Simoen
Article dans une revue
hal-05118056
v1
|
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Novel Y-function methodology parameter estimation from weak to strong inversion operation
A. Tahiat
,
B. Cretu
,
A. Veloso
,
E. Simoen
Article dans une revue
hal-05118066
v1
|
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Refined Analysis of the Correlated Carrier Number and Mobility Fluctuations Mechanism in MOSFETs
Bogdan Cretu
,
Abderrahim Tahiat
,
Anabela Veloso
,
Eddy Simoen
Article dans une revue
hal-05118050
v1
|
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(Invited) In-Depth Understanding of the Key Contributors to the Total Flicker Noise in Advanced Logic Devices
Bogdan Cretu
,
Abderrahim Tahiat
,
Anabela Veloso
,
Eddy Simoen
Article dans une revue
hal-04335869
v1
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Refined DC and Low-Frequency Noise Characterization at Room and Cryogenic Temperatures of Vertically Stacked Silicon Nanosheet FETs
Bogdan Cretu
,
Anabela Veloso
,
Eddy Simoen
Article dans une revue
hal-04335878
v1
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(Invited) In-Depth DC and Low Frequency Noise Characterization of Nanosheet FETs at Room and Cryogenic Temperatures
Bogdan Cretu
,
Abderrahim Tahiat
,
Anabela Veloso
,
Eddy Simoen
Article dans une revue
hal-04335860
v1
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In-depth static and low frequency noise assessment of p-channel gate-all-around vertically stacked silicon nanosheets
B. Cretu
,
A. Veloso
,
E. Simoen
Article dans une revue
hal-04335886
v1
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Is there a limit when the access resistance impact on the extraction of key GAA NS FETs devices parameters can (not) be avoided?
A. Tahiat
,
B. Cretu
,
A. Veloso
,
E. Simoen
Article dans une revue
hal-04335903
v1
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Novel Y-function based strategy for parameter extraction in S/D asymmetric architecture devices and low frequency noise characterization in GAA Si VNW pMOSFETs
A. Tahiat
,
B. Cretu
,
A. Veloso
,
E. Simoen
Article dans une revue
hal-04335891
v1
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DC and low a frequency noise analysis of p channel gate all around vertically stacked silicon nanosheets
B. Cretu
,
Anabela Veloso
,
Eddy Roger Simoen
Article dans une revue
hal-03784465
v1
|
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(Invited) Innovations in Transistor Architecture and Device Connectivity Options for Advanced Logic Scaling
Anabela Veloso
,
Geert Eneman
,
Eddy Simoen
,
Bogdan Cretu
,
An de Keersgieter
et al.
Article dans une revue
hal-03784469
v1
|
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Si GAA NW FETs threshold voltage evaluation
Dragos Dobrescu
,
Bogdan Cretu
,
Eddy Simoen
,
Anabela Veloso
,
Andrei Voicu-Spineanu
et al.
Article dans une revue
hal-03784467
v1
|
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Performance Perspective of Gate-All-Around Double Nanosheet CMOS Beyond High-Speed Logic Applications
Eddy Simoen
,
Carlos H.S. Coelho
,
Vanessa C.P. Da Silva
,
João Martino
,
Paula Ghedini Der Agopian
et al.
Article dans une revue
hal-03852430
v1
|
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Detailed low frequency noise assessment on GAA NW n-channel FETs
B. Cretu
,
A. Bordin
,
E. Simoen
,
G. Hellings
,
D. Linten
et al.
Article dans une revue
hal-03784462
v1
|
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Improved physics-based analysis to discriminate the flicker noise origin at very low temperature and drain voltage polarization
B Cretu
,
D. Boudier
,
E. Simoen
,
A. Veloso
,
N. Collaert
et al.
Article dans une revue
hal-02475438
v1
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Discussion on the Figures of Merit of Identified Traps Located in the Si Film: Surface Versus Volume Trap Densities
B Cretu
,
Beya Nafaa
,
Eddy Simoen
,
Geert Hellings
,
Dimitri Linten
et al.
Article dans une revue
hal-02939114
v1
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Low frequency noise analysis on Si/SiGe superlattice I/O n-channel FinFETs
D. Boudier
,
B Cretu
,
E. Simoen
,
G. Hellings
,
T. Schram
et al.
Article dans une revue
hal-02438740
v1
|
|
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Detailed characterisation of Si Gate-All-Around Nanowire MOSFETs at cryogenic temperatures
D. Boudier
,
B Cretu
,
E. Simoen
,
A. Veloso
,
N. Collaert
Article dans une revue
hal-02438730
v1
|
|
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Low-frequency noise measurements at liquid helium temperature operation in ultra-thin buried oxide transistors – Physical interpretation of transport phenomena
B. Nafaa
,
B Cretu
,
N. Ismail
,
O. Touayar
,
R. Carin
et al.
Article dans une revue
hal-02438735
v1
|
|
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Low frequency noise assessment in n- and p-channel sub-10nm triple-gate FinFETs: Part I: Theory and methodology
D. Boudier
,
B. Cretu
,
E. Simoen
,
Régis Carin
,
A. Veloso
et al.
Article dans une revue
hal-01712351
v1
|
|
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Low frequency noise assessment in n- and p-channel sub-10nm triple-gate FinFETs: Part II: Measurements and results
D. Boudier
,
B. Cretu
,
E. Simoen
,
Régis Carin
,
A. Veloso
et al.
Article dans une revue
hal-01712353
v1
|
|
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Low-Frequency Noise Analysis and Modeling in Vertical Tunnel FETs With Ge Source
Felipe Neves
,
Paula Agopian
,
Joao Antonio Martino
,
Bogdan Cretu
,
Rita Rooyackers
et al.
Article dans une revue
hal-01712409
v1
|
|
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(Invited) Generation-Recombination Noise in Advanced CMOS Devices
E. Simoen
,
A. Oliveira
,
D. Boudier
,
J. Mitard
,
L. Witters
et al.
Article dans une revue
hal-01712452
v1
|
|
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Assessment of DC and low-frequency noise performances of triple-gate FinFETs at cryogenic temperatures
B Cretu
,
D Boudier
,
E. Simoen
,
A Veloso
,
N. Collaert
Article dans une revue
hal-01712415
v1
|
|
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Low-frequency noise spectroscopy of bulk and border traps in nanoscale devices
E. Simoen
,
Bogdan Cretu
,
W Fang
,
M. Aoulaiche
,
Jean-Marc Routoure
et al.
Article dans une revue
hal-01196556
v1
|
|
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Identification of Si film traps in p-channel SOI FinFETs using low temperature noise spectroscopy
Hakim Hachour
,
Bogdan Cretu
,
Jean-Marc Routoure
,
Régis Carin
,
A. Benfdila
et al.
Article dans une revue
hal-01196272
v1
|
|
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Towards single-trap spectroscopy : Generation-recombination noise in UTBOX SOI nMOSFETs
Eddy Simoen
,
Bogdan Cretu
,
Wen Fang
,
M. Aoulaiche
,
Jean-Marc Routoure
et al.
Article dans une revue
hal-01196247
v1
|
|
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In depth static and low-frequency noise characterization of n-channel FinFETs on SOI substrates at cryogenic temperature
H. Achour
,
Bogdan Cretu
,
Jean-Marc Routoure
,
Régis Carin
,
Rachida Talmat
et al.
Solid-State Electronics, 2014, 8 p
Article dans une revue
hal-00994380
v1
|
|
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Low-frequency noise assessment in advanced UTBOX SOI nMOSFETs with different gate dielectrics
S.D. dos Santos
,
Bogdan Cretu
,
V. Strobel
,
Jean-Marc Routoure
,
Régis Carin
et al.
Article dans une revue
hal-00994378
v1
|
|
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Low-frequency noise studies on fully depleted UTBOX silicon-on-insulator nMOSFETs: challenges and opportunities
Eddy Simoen
,
M. Aoulaiche
,
S.D. dos Santos
,
J.A. Martino
,
V. Strobel
et al.
Article dans une revue
hal-00994293
v1
|
|
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Lessons Learned from Low-Frequency Noise Studies on Fully Depleted UTBOX Silicon-on-Insulator nMOSFETs
E. Simoen
,
M. Aoulaiche
,
S.D. dos Santos
,
J.A. Martino
,
V. Strobel
et al.
ECS Journal of Solid State Science and Technology, 2013, pp.q205-q210
Article dans une revue
hal-00994168
v1
|
|
|
DC and low frequency noise performances of SOI p-FinFETs at very low temperature
H. Achour
,
Rachida Talmat
,
Bogdan Cretu
,
Jean-Marc Routoure
,
A. Benfdila
et al.
Article dans une revue
hal-00994180
v1
|
|
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Low-Frequency Noise in High-K and SiO 2 UTBOX SOI nMOSFETS
S. dos Santos
,
J. Martino
,
Vincent Strobel
,
Bogdan Cretu
,
Jean-Marc Routoure
et al.
Article dans une revue
hal-03784649
v1
|
|
|
Low frequency noise characterization in n-channel FinFETs
Rachida Talmat
,
H. Achour
,
Bogdan Cretu
,
Jean-Marc Routoure
,
A. Benfdila
et al.
Solid-State Electronics, 2012, p20-26
Article dans une revue
hal-00994184
v1
|
|
|
Improvement in the determination by 1/f noise measurements of the interface state distribution in polysilicon TFTs in relation with the compensation law of Meyer Neldel
Laurent Pichon
,
Abdelmalek Boukhenoufa
,
Bogdan Cretu
,
Regis Rogel
Article dans une revue
hal-00387394
v1
|
|
|
THERMAL DEPENDENCE OF LOW-FREQUENCY NOISE IN POLYSILICON THIN FILM TRANSISTORS
Laurent Pichon
,
Bogdan Cretu
,
Abdelmalek Boukhenoufa
Article dans une revue
hal-00522575
v1
|
|
|
Impact of strain and source/drain engineering on the low frequency noise behaviour in n-channel tri-gate FinFETs
W. Guo
,
B. Cretu
,
J.-M. Routoure
,
R. Carin
,
E. Simoen
et al.
Article dans une revue
istex
hal-03784657
v1
|
|
|
Numerical Simulation of Low-Frequency Noise in Polysilicon Thin-Film Transistors
Laurent Pichon
,
Abdelmalek Boukhenoufa
,
Christophe Cordier
,
Bogdan Cretu
Article dans une revue
hal-00171712
v1
|
|
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Temperature impact on the Lorentzian noise induced by electron valence-band tunneling in partially depleted SOI p-MOSFETs
W. Guo
,
B. Cretu
,
J.-M. Routoure
,
R. Carin
,
E. Simoen
et al.
Article dans une revue
istex
hal-03784679
v1
|
|
|
Numerical simulation of conduction and low frequency noise in polysilicon thin film transistors
Laurent Pichon
,
Abdelmalek Boukhenoufa
,
Christophe Cordier
,
Bogdan Cretu
IEEE Electron Device Letters, 2007, 28, pp.719-718
Article dans une revue
hal-00197122
v1
|
|
|
Numerical simulation of conduction and low-frequency noise in polysilicon thin film transistors
Abdelmalek Boukhenoufa
,
Christophe Cordier
,
Laurent Pichon
,
Bogdan Cretu
Article dans une revue
hal-00171471
v1
|
|
|
Low temperature noise spectroscopy of 0.1 μm partially depleted silicon on insulator metal-oxide-semiconductor field effect transistors
I. Lartigau
,
J. Routoure
,
W. Guo
,
B. Cretu
,
R. Carin
et al.
Article dans une revue
hal-03784674
v1
|
|
|
Numerical simulations of conduction and low-frequency noise in polysilicon TFTs
Abdelmalek Boukhenoufa
,
Christophe Cordier
,
Laurent Pichon
,
Bogdan Cretu
Thin Solid Films, 2007, pp.7556-7559
Article dans une revue
hal-00259046
v1
|
|
|
Low-Frequency Noise Assessment of Silicon Passivated Ge pMOSFETs With TiN/TaN/ $\hbox{HfO}_{2}$ Gate Stack
W. Guo
,
G. Nicholas
,
B. Kaczer
,
R. Todi
,
B. de Jaeger
et al.
Article dans une revue
hal-03784663
v1
|
|
|
Numerical simulation of low frequency noise in polysilicon thin film transistors
Laurent Pichon
,
Abdelmalek Boukhenoufa
,
Christophe Cordier
,
Bogdan Cretu
IEEE Electron Device Letters, 2007, 28 (8), pp.716-718
Article dans une revue
hal-00198456
v1
|
|
|
Determination of interface state distribution in polysilicon thin film transistors from low frequency -noise measurements: application to analysis of electrical properties
Laurent Pichon
,
Abdelmalek Boukhenoufa
,
Christophe Cordier
,
Bogdan Cretu
Journal of Applied Physics, 2006, 100 (5), pp.54504-54509
Article dans une revue
hal-00437321
v1
|