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Thermal Enhancement of GaN Schottky Diodes Annealed at 600°C for High Power and High Temperature RF Applications
Beatriz Orfao
,
Amir Al Abdallah
,
Hugo Bouillaud
,
Guillaume Ducournau
,
Yannick Roelens
et al.
Article dans une revue
hal-05149241
v1
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Influence of passivation, doping and geometrical parameters on the avalanche breakdown of GaN SBDs
B. Orfao
,
R A Peña
,
B G Vasallo
,
S Pérez
,
J Mateos
et al.
Article dans une revue
hal-05376884
v1
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Reverse Leakage Current Hysteresis in GaN Schottky Barrier Diodes Interpreted in Terms of a Trap Energy Band
R. Peña
,
B. Orfao
,
I. Íñiguez-De-La-Torre
,
G. Paz
,
Mahmoud Abou Daher
et al.
Article dans une revue
hal-04665811
v1
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Comprehensive model for ideal reverse leakage current components in Schottky barrier diodes tested in GaN-on-SiC samples
B. Orfao
,
G. Di Gioia
,
B. Vasallo
,
S. Pérez
,
J. Mateos
et al.
Article dans une revue
hal-03741441
v1
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Dielectric Passivation and Edge Effects in Planar GaN Schottky Barrier Diodes
B. Orfao
,
B. Vasallo
,
S. Perez
,
J. Mateos
,
D. Moro-Melgar
et al.
Article dans une revue
hal-03508422
v1
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