Beatriz Orfao E Vale Tabernero

9
Documents

Publications

Publications

0.53 mΩ.cm 2 /592 V High Breakdown Voltage GaN-on-Sapphire Schottky Diodes Without Edge Termination

Hugo Bouillaud , Beatriz Orfao , Etienne Okada , Yannick Roelens , Malek Zegaoui et al.

IEEE Electron Device Letters, 2026, pp.1-1. ⟨10.1109/LED.2026.3652934⟩

Article dans une revue hal-05484994v1
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Comparison of reverse current mechanisms in GaN Schottky diodes grown on sapphire versus ammonothermal GaN substrates

B Orfao , Mahmoud ABOU DAHER , H Bouillaud , Y Roelens , P Prystawko et al.

Journal of Physics D: Applied Physics, 2026, 59 (12), pp.12LT01. ⟨10.1088/1361-6463/ae506d⟩

Article dans une revue hal-05573797v1
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Thermal Enhancement of GaN Schottky Diodes Annealed at 600°C for High Power and High Temperature RF Applications

Beatriz Orfao , Amir Al Abdallah , Hugo Bouillaud , Guillaume Ducournau , Yannick Roelens et al.

Electronics Letters, 2025, 61 (1), pp.e70307. ⟨10.1049/ell2.70307⟩

Article dans une revue hal-05149241v1
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Influence of passivation, doping and geometrical parameters on the avalanche breakdown of GaN SBDs

B. Orfao , R A Peña , B G Vasallo , S Pérez , J Mateos et al.

Journal of Computational Electronics, 2025, 24, pp.189. ⟨10.1007/s10825-025-02430-2⟩

Article dans une revue hal-05376884v1

Reverse Leakage Current Hysteresis in GaN Schottky Barrier Diodes Interpreted in Terms of a Trap Energy Band

R. Peña , B. Orfao , I. Íñiguez-De-La-Torre , G. Paz , Mahmoud Abou Daher et al.

IEEE Transactions on Electron Devices, 2024, 71 (8), pp.4524-4529. ⟨10.1109/TED.2024.3409202⟩

Article dans une revue hal-04665811v1
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Comprehensive model for ideal reverse leakage current components in Schottky barrier diodes tested in GaN-on-SiC samples

B. Orfao , G. Di Gioia , B. Vasallo , S. Pérez , J. Mateos et al.

Journal of Applied Physics, 2022, 132 (4), pp.044502. ⟨10.1063/5.0100426⟩

Article dans une revue hal-03741441v1
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Dielectric Passivation and Edge Effects in Planar GaN Schottky Barrier Diodes

B. Orfao , B. Vasallo , S. Perez , J. Mateos , D. Moro-Melgar et al.

IEEE Transactions on Electron Devices, 2021, 68 (9), pp.4296-4301. ⟨10.1109/TED.2021.3097703⟩

Article dans une revue hal-03508422v1

Temperature dependence of RF detection performance of GaAs and GaN Schottky barrier diodes

Gaudencio Paz-Martínez , Beatriz Orfao E Vale Tabernero , Ignacio Íñiguez-De-La-Torre , Philippe Artillan , Raúl Peña et al.

15th Spanish Conference on Electron Devices (CDE'25), Jan 2025, Malaga, Spain

Communication dans un congrès hal-05499507v1

RF Detection Performance of GaN Devices: Measurements and Modelling

Tomas I. Gonzales , Ignacio Íñiguez-De-La-Torre , Gaudencio Paz-Martínez , Beatriz Orfao E Vale Tabernero , Hector Sanchez-Martin et al.

48th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE’25), Jun 2025, Cádiz, Spain

Communication dans un congrès hal-05499526v1