Beatriz Orfao E Vale Tabernero

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Thermal Enhancement of GaN Schottky Diodes Annealed at 600°C for High Power and High Temperature RF Applications

Beatriz Orfao , Amir Al Abdallah , Hugo Bouillaud , Guillaume Ducournau , Yannick Roelens et al.
Electronics Letters, 2025, 61 (1), pp.e70307. ⟨10.1049/ell2.70307⟩
Article dans une revue hal-05149241 v1
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Influence of passivation, doping and geometrical parameters on the avalanche breakdown of GaN SBDs

B. Orfao , R A Peña , B G Vasallo , S Pérez , J Mateos et al.
Journal of Computational Electronics, 2025, 24, pp.189. ⟨10.1007/s10825-025-02430-2⟩
Article dans une revue hal-05376884 v1

Reverse Leakage Current Hysteresis in GaN Schottky Barrier Diodes Interpreted in Terms of a Trap Energy Band

R. Peña , B. Orfao , I. Íñiguez-De-La-Torre , G. Paz , Mahmoud Abou Daher et al.
IEEE Transactions on Electron Devices, 2024, 71 (8), pp.4524-4529. ⟨10.1109/TED.2024.3409202⟩
Article dans une revue hal-04665811 v1
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Comprehensive model for ideal reverse leakage current components in Schottky barrier diodes tested in GaN-on-SiC samples

B. Orfao , G. Di Gioia , B. Vasallo , S. Pérez , J. Mateos et al.
Journal of Applied Physics, 2022, 132 (4), pp.044502. ⟨10.1063/5.0100426⟩
Article dans une revue hal-03741441 v1
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Dielectric Passivation and Edge Effects in Planar GaN Schottky Barrier Diodes

B. Orfao , B. Vasallo , S. Perez , J. Mateos , D. Moro-Melgar et al.
IEEE Transactions on Electron Devices, 2021, 68 (9), pp.4296-4301. ⟨10.1109/TED.2021.3097703⟩
Article dans une revue hal-03508422 v1