Christophe Labbé
Présentation
Publications
Publications
Atomic Layer Deposition of Spinel Bimetallic Oxides for Enhanced Photoelectrochemical Energy ConversionEMRS spring meeting 2025, EMRS, May 2025, Strasbourg, France |
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Low-Temperature Crystallization of Indium-Free TransparentConductive Niobates on Glass Using Nanosheet Seed LayerStructure Property relationships in Solid State Materials (SPSSM), SCF, Jul 2025, Nantes, France |
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Controlling the Insulator-to-Metal Transition in VO₂ Thin Films through Tailored Magnetron Sputtering Deposition ConditionsE-MRS Fall Meeting 2025, E-MRS, Sep 2025, Varsovie, Poland |
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Approaching the Insulator-to-Metal Transition (IMT) in ALD-Deposited VOx: Significant Impact on a Broad IR Transmission RangeE-MRS Fall Meeting 2025, Sep 2025, Varsovie, Poland |
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Improving the long-term stability of new-generation perovskite-based TCOs using binary and ternary oxides capping layersEMRS Fall meeting 2025, E-MRS, Sep 2025, Varsovie, Poland |
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Enhancing Optical Properties of Ta2O5 Thin Films Grown by Radiofrequency Magnetron Sputtering through Rapid Thermal AnnealingE-MRS Fall Meeting ,Symposium I (Nano-engineered coatings and thin films: from fundamentals to applications), Strasbourg, France., E-MRS, Sep 2025, Varsovie, Poland |
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Vanadate TCO on glass substrate using CNO nanosheets as a template: effect of thickness on the film properties30th International Workshop on Oxide Electronics (iWOE-30), Technische Universität Darmstadt; Forschungszentrum Jülich GmbH, Sep 2024, Darmstadt, Germany |
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Integration of perovskite based transparent conducting oxides on industrial substrates: the key role of the glass substrate properties and binary oxides seed layers30th International Workshop on Oxide Electronics (iWOE-30), iWOE, Oct 2024, Darmstadt, Germany |
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Impact of Oxidation Conditions on the Orientation of TiNxOy Synthesized by ALD: A Study of Optical and Electrical Properties10e édition du Workshop du GDR RAFALD (Réseau des Acteurs Français de l'ALD), GDR RAFALD, Oct 2024, Nantes, France |
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La doping of SrVO3: tuning the effective mass in a TCO30th International Workshop on Oxide Electronics (iWOE-30), iWOE, Oct 2024, Darmstadt (Allemagne), Germany |
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Toward an Insulator-to-Metal Transition (IMT) in VOx Deposited by ALD: Huge Effect on Large IR Transmission Range244th ECS meeting, ECS, Oct 2023, Göteborg, Sweden. ⟨10.1149/MA2023-02291486mtgabs⟩ |
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Structural, Electrical and Optical Properties of Zn-Doped SrVO3 Thin Films Grown By Co-Sputtering244th ECS Meeting, ECS, Oct 2023, Göteborg, Sweden. ⟨10.1149/MA2023-02341669mtgabs⟩ |
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Nb (V, Nb/V)-Doped TiO2 Films as New Transparent Conducting Oxides Synthesized by a Novel ALD Process: Effect of Dopant Content and Growing Conditions244th ECS Meeting, ECS, Oct 2023, Göteborg, Sweden. ⟨10.1149/MA2023-02291487mtgabs⟩ |
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Strontium Vanadate Deposited by ALD: Toward a New Synthesis Approach244th ECS Meeting, ECS, Oct 2023, Göteborg, Sweden. ⟨10.1149/MA2023-02291489mtgabs⟩ |
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Nb/V-Doped Transparent Conductive TiO2 Films Synthesized by ALD: Effect of Dopant Content and Growing ConditionsALD 2022, AVS, Jun 2022, Ghent, Belgium |
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Spectroscopic studies of new series of alkaline earth elements (Mg, Ca, Sr, Ba) correlated metallophosphonatesSPIE Photonics Europe, Organic Electronics and Photonics: Fundamentals and Devices III, Apr 2022, Strasbourg, France. pp.55, ⟨10.1117/12.2621565⟩ |
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Effect of Insulator-to-Metal Transition (Imt) in Vo2 Deposited by ALDALD 2022, AVS, Jun 2022, Ghent, Belgium |
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RF magnetron sputtering deposition of multilayers optical filters for ultra-broadband applications with a large number of thin layersEOS Annual Meeting 2021, EOS, Sep 2021, Rome, Italy |
(Invited) Luminescence of Rare Earth Doped Si Based Nanofilms for LED and Photovoltaic Applications237th ECS Meeting with the 18th International Meeting on Chemical Sensors (IMCS 2020), May 2020, Montreal, Canada. pp.1064-1064, ⟨10.1149/ma2020-01161064mtgabs⟩ |
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(Invited) Rare Earth Doped Layers Fabricated By Atomic Layer Deposition237th ECS Meeting with the 18th International Meeting on Chemical Sensors (IMCS 2020) May 10, 2020 - May 14, May 2020, Montreal, Canada. pp.1066-1066, ⟨10.1149/ma2020-01161066mtgabs⟩ |
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First rare earth ions doped Si based down converter layers integration in an industrial Si solar cell7th International Conference "Nanotechnologies and Nanomaterials" NANO-2019, Aug 2019, Lviv, Ukraine |
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Rare earth doped semiconducting nanofilms for Si-based light-emitting devices7th Int. Conf. on Nanotechnologies and Nanomaterials (Nano), Aug 2019, Lviv, Ukraine |
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Simulation of dual-wavelength pumped 3.5 µm CW laser operation of Er:Ca$F_{2}$ in waveguide configurationCompact EUV & X-ray Light Sources, 2018, Strasbourg, France. ⟨10.1364/EUVXRAY.2018.JT5A.12⟩ |
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Rare earth doped silicon based frequency conversion layers for Si solar cell efficiency improvementRéunion plénière du GDR NACRE, Nov 2018, Nov 2018, Paris, France |
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(Invited) Naked Eye Blue Emission in Ce 3+ Codoped SiO x N y : Toward Si-Based Light-Emitting Devices233rd ECS Meeting May 13, 2018 - May 17, 2018, May 2018, Seattle, United States. pp.1156-1156, ⟨10.1149/MA2018-01/16/1156⟩ |
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ELECTRICAL CONDUCTION IN MOS DEVICES BASED ON SI NANOCRYSTAL-SIOX FILMSEMRS Spring Meeting 2013, May 2013, Strasbourg, France |
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Nanostructured silicon and rare earth based gain media for compact infra-red light source: experimental and theoretical investigations7th International Conference on Materials for Advanced Technologies (ICMAT 2013), Jun 2013, Suntec, Singapore |
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Electrical conduction and electroluminescence in MOS devices based on Si nanocrystal embedded in SiOx-Si-Nd filmsMRS Spring Meeting, Apr 2012, San Francisco, United States |
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Rare earth doped Zinc oxide thin films for optoelectronic applicationsEuropean Workshop on nano Transparent Conductive Materials, Jun 2012, Grenoble, France |
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Rare earth doped Zinc oxide thin films for white LED3ème colloque nationale ZnO, Jun 2012, Paris, France |
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Optical and structural properties of SiO2 co-doped with Si-nc and Er3+ ionsSPIE NanoScience + Engineering, 2010, San Diego, United States. pp.77660Z, ⟨10.1117/12.865488⟩ |
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Light emitting diodes on silicon substrates: preliminary resultsTNT (Trends in Nanotechnologies), Sep 2008, Oviedo, Spain. pp.2212-16, ⟨10.1002/pssc.200881728⟩ |
Highlighting excitonic optical properties of bundled carbon nanotubes to tailor novel saturable absorbers9th International Conference Trends in Nanotechnology (TNT 2008), Sep 2008, Oviedo, Spain. pp.2160, ⟨10.1002/pssc.200881708⟩ |
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Photoluminescence de nanostructures sur substrat GaP/SiJournées Nanosciences de Bretagne (JNB2), May 2008, Rennes, France. pp.1 |
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Photocurrent study of InAs/GaInAsP(Q1.18) quantum dotsIndium Phosphide and Related Materials (IPRM), May 2008, Versailles, France. pp.309-11, ⟨10.1109/ICIPRM.2008.4702977⟩ |
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Evidence of lateral coupling on the carrier dynamics in InAs/InP(311)B quantum dotsIndium Phosphide and Related Materials, May 2008, Versailles, France. pp.1-4, ⟨10.1109/ICIPRM.2008.4702968⟩ |
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Preliminary results for the realization of light emitters on silicon substrateSQDA (International Workshop on Semiconductor Quantum Dot Devices and Applications), Jul 2008, Rennes, France. pp.1 |
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Effect of lateral coupling on the carrier redistribution in InAs/InP(311)B high dots surface densityInternational Workshop on Semiconductor Quantum Dot Devices and Applications, Jul 2008, rennes, France. pp.1 |
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Carrier relaxation dynamics of 1.55 µm InAs/InP quantum dots under high resonant excitation28th International Conference on the Physics of Semiconductors - ICPS 2006, Jul 2006, Vienne, Austria. pp.991, ⟨10.1063/1.2730228⟩ |
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Optical properties and morphology of the quantum dots InAs/InP (311)B characterized by photoluminescenceLWQD (International Workshop on Long Wavelength Quantum Dots : Growth and Applications), Jul 2007, Rennes, France. pp.1 |
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Dynamics spectroscopy in 1.55 µm InAs/InP quantum dots under high resonant excitationIWSQDA (International Workshop on Semiconductor quantum dot based devices and applications), Mar 2006, Paris, France. pp.1 |
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Theory and experiment of InAs/InP quantum dots : from calculations to laser emission28th International Conference on the Physics of Semiconductor, Jul 2006, Vienne, Austria. pp.779-780, ⟨10.1063/1.2730122⟩ |
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Étude de dispositifs optiques à microcavité verticale pour une émission laser polarisée9ème Colloque sur les Lasers et l'Optique Quantique, Sep 2005, Dijon, France. p. 125-126, ⟨10.1051/jp4:2006135025⟩ |
Potentialités des lasers à fibre dans la génération de rayonnement cohérent UV8ième Colloque sur les sources cohérentes et incohérentes UV, VUV et X, 2006, Colleville sur mer, France |
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Optical characterisation of InAs/InP self-assembled quantum dots for optimisation of lasing propertiesSandie Optics Task Force meeting, Technische Universitat Berlin, January 12-13 (2006), Jan 2006, Berlin, Germany. pp.1 |
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Charge carrier redistribution in ordered Arrays of laterally coupled self-assembled quantum dotsUK Compound Semiconductors conference, Jul 2006, Sheffield, United Kingdom. pp.1 |
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Réalisation d'un laser à faible courant de seuil, avec des boites quantiques InAs/InP organisées et couplées latéralement9th Colloquium on Lasers and Quantum Optics (COLOQ 9), Sep 2005, Dijon, France. pp.141, ⟨10.1051/jp4:2006135031⟩ |
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Exciton and biexciton lifetimes in InAs/InP quantum dots emitting at 1.55 µm wavelength under high resonant excitationICSSN (International Conference on SuperLattices, Nano-structures and Nano-Devices), Jul 2006, Istanbul, Turkey. pp.454, ⟨10.1002/pssc.200673214⟩ |
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Nanotechnologies: Etude des boites quantiques pour des applications télécoms, environnementales et médicalesjournées CIES : moniteurs du grand-ouest, 2005, Rennes, France |
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Design and Fabrication of GaInAsP-InP VCSEL with two a-Si/a-SiNx Bragg ReflectorsInternational Workshop on PHysics & Applications of SEmiconductor LASERS, Mar 2005, Metz, France. p1 |
Carrier dynamics and saturation effect in (311)B InAs/InP quantum dot lasersPHASE 2005, international workshop on physics and applications of semiconductors lasers, 2005, Metz, France. pp.1 |
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Properties of 1.55 microns quantum dots: Simulation, calculation and optical characterizationinvited seminar at the KU Leuven, 2005, Leuven, Belgium |
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Theoretical Description Of The Electronic Coupling Between A Wetting Layer And A QD Superlattice PlaneInternational Conference on Physics of Semiconductors (ICPS 27), Jul 2004, Flagstaff, United States. pp.787, ⟨10.1063/1.1994342⟩ |
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Mesure directe de l'absorption optique à 1.55 microns de boites quantiques InAs/InP (113)B et étude de l'influence du couplage boite/couche de mouillage sur les propriétés électroniquesJournées de la matière condensée, 2004, Nancy, France. pp.1 |
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Mesure directe de l'absorption optique à 1.55 microns de boites quantiques InAs/InP (113)B et étude de l'influence du couplage boite/couche de mouillage sur les propriétés électroniquesjournée des doctorants de Rennes, Dec 2004, Rennes, France. pp.1 |
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Reciprocal space description of the electronic coupling between a wetting layer and a QD superlattice planeCECAM workshop on "modeling of self-assembled semi-conductors nanostructures", Jun 2004, Lyon, France. pp.1 |
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Lasers à îlots quantiques InAs/InP émettant à 1.55 µm pompés électriquement10èmes Journées Nationales Microélectronique Optoélectronique (JNMO 2004), Jun 2004, La Grande Motte, France |
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Growth and Optical Characterizations of InAs Quantum Dots on InP Substrate: Towards a 1.55 µm Quantum Dot Laser12th international conference on Molecular Beam Epitaxy (MBE 2002), Sep 2002, San Francisco (CA), United States. pp.230-235, ⟨10.1016/S0022-0248(02)02473-9⟩ |
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Lasers à îlots quantiques InAs/InP émettant à 1.53µm sur la transition fondamentale8èmes Journées de la Matière Condensée (JMC8), Sep 2002, Marseille, France |
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Fundamental emission of InAs/InP quantum dots laser at 1.52 µm26th International Conference on the Physics of Semiconductors (ICPS-26), Aug 2002, Edinburgh, United Kingdom |
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Caractérisations optiques des boites quantiques InAs/InP émettant à 1.55 µm9èmes Journées Nationales Microélectronique Optoélectronique (JNMO 2002), Oct 2002, Saint-Aygulf, France |
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Lasers à base d'îlots quantiques InAs/Inp(100) et (311)B9èmes Journées Nationales Microélectronique Optoélectronique (JNMO 2002), Oct 2002, Saint-Aygulf, France |
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Frequency Conversion Layers for Si Solar Cell Efficiency ImprovementFrontiers in Electronic Technologies. , 433, Springer, 2017, Lecture Notes in Electrical Engineering, 978-981-10-4234-8. ⟨10.1007/978-981-10-4235-5_5⟩ |
A material comprising an host matrix, rare earth ions and a metal atom cluster as sensitiserFrance, Patent n° : WO2014111434A1. 2014 |