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Christophe Raynaud

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Electrically active traps in 4H-silicon carbide (4H-SiC) PiN power diodes

P. Vigneshwara Raja , Christophe Raynaud , Besar Asllani , Hervé Morel , Dominique Planson
Journal of Materials Science: Materials in Electronics, 2023, 34 (17), pp.1383. ⟨10.1007/s10854-023-10813-z⟩
Journal articles hal-04199489v1
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Design, Fabrication and Characterization of 10 kV 4H-SiC BJT for the Phototransistor Target

Ali Ammar , Mihai Lazar , Bertrand Vergne , Sigo Scharnholz , Luong Viêt Phung
Romanian Journal of Information Science and Technology, 2023, 26 (2), pp.193-204. ⟨10.59277/ROMJIST.2023.2.06⟩
Journal articles hal-04276812v1
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Physics-based Strategies for Fast TDDB Testing and Lifetime Estimation in SiC Power MOSFETs

O. Aviñó-Salvadó , Cyril Buttay , F. Bonet , C. Raynaud , P. Bevilacqua
IEEE Transactions on Industrial Electronics, inPress, ⟨10.1109/TIE.2023.3281705⟩
Journal articles hal-04147050v1
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Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes

P. Vigneshwara Raja , Christophe Raynaud , Camille Sonneville , Atse Julien Eric N’dohi , Hervé Morel
Microelectronics Journal, 2022, 128, pp.105575. ⟨10.1016/j.mejo.2022.105575⟩
Journal articles hal-03826217v1
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Study of mobile ionic charges by thermally stimulated currents in 4H-SiC MOS capacitors with thick SiO2 layers

Christophe Raynaud , Marie-Laure Locatelli , J.F. Mogniotte , R. Arvinte , G. Grosset
Materials Science and Engineering: B, 2021, 263, pp.114840. ⟨10.1016/j.mseb.2020.114840⟩
Journal articles hal-03196323v1
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Multi-barrier height characterization and DLTS study on Ti/W 4H-SiC Schottky Diode

Teng Zhang , Christophe Raynaud , Dominique Planson
Materials Science Forum, 2019, 963, pp.576-579. ⟨10.4028/www.scientific.net/MSF.963.576⟩
Journal articles hal-02436812v1
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Analytical modelling of a lateral dual gate MESFET for integrated circuit in SiC

Jean-François Mogniotte , Christophe Raynaud , Mihai Lazar , Loïc Michel
Romanian Journal of Information Science and Technology, 2019, 22 (2), pp.103-110
Journal articles hal-02405784v1
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Measure and analysis of 4H-SiC Schottky barrier height with Mo contacts

Teng Zhang , Christophe Raynaud , Dominique Planson
European Physical Journal: Applied Physics, 2019, 85 (1), pp.10102. ⟨10.1051/epjap/2018180282⟩
Journal articles hal-02047099v1
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Extraction of the 4H-SiC/SiO₂ Barrier Height Over Temperature

Oriol Aviño Salvado , Besar Asllani , Cyril Buttay , Christophe Raynaud , Hervé Morel
IEEE Transactions on Electron Devices, 2019, 67 (1), pp.63 - 68. ⟨10.1109/TED.2019.2955181⟩
Journal articles hal-02418097v1
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Experimental and simulation results of optical beam induced current technique applied to wide bandgap semiconductors

Dominique Planson , Besar Asllani , Luong-Viet Phung , Pascal Bevilacqua , Hassan Hamad
Materials Science in Semiconductor Processing, 2019, 94, pp.116-127. ⟨10.1016/j.mssp.2019.01.042⟩
Journal articles hal-02053053v1
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Near Breakdown Voltage Optical Beam Induced Current (OBIC) on 4H-SiC Bipolar Diode

Dominique Planson , Besar Asllani , Hassan Hamad , Marie-Laure Locatelli , R Arvinte
Materials Science Forum, 2018, Silicon Carbide and Related Materials 2017, 924, pp.577-580. ⟨10.4028/www.scientific.net/MSF.924.577⟩
Journal articles hal-01818806v1
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Silicon Carbide Technology of MESFET-Based Power Integrated Circuits

Jean-François Mogniotte , Dominique Tournier , Christophe Raynaud , Mihai Lazar , Dominique Planson
IEEE Journal of Emerging and Selected Topics in Power Electronics, 2018, 6 (2), pp.539 - 548. ⟨10.1109/JESTPE.2017.2778002⟩
Journal articles hal-01864533v1
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SiC integrated circuits for smart power converter

J F Mogniotte , Mihai Lazar , Christophe Raynaud , Dominique Planson , B Allard
Romanian Journal of Information Science and Technology, 2017, 20 (4), pp.385-399
Journal articles hal-04277111v1
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Realization and Characterization of Carbonic Layers on 4H-SiC for Electrochemical Detections

Julien Pezard , Véronique Soulière , Mihai Lazar , Naoufel Haddour , François Buret
Materials Science Forum, 2017, 897, pp.739 - 742. ⟨10.4028/www.scientific.net/MSF.897.739⟩
Journal articles hal-01644735v1

Further optimization of VLS localized epitaxy for deeper 4H-SiC p-n junctions

Gabriel Ferro , Selsabil Sejil , Mihai Lazar , D. Carole , C. Brylinski
physica status solidi (a), 2017, 214 (4), ⟨10.1002/pssa.201600454⟩
Journal articles hal-01615190v1
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Very High Sustainable Forward Current Densities on 4H-SiC p-n Junctions Formed by VLS Localized Epitaxy of Heavily Al-Doped p++ Emitters

Selsabil Sejil , Loïc Lalouat , Mihai Lazar , Davy Carole , Christian Brylinski
Materials Science Forum, 2017, 897, pp.63 - 66. ⟨10.4028/www.scientific.net/MSF.897.63⟩
Journal articles hal-01648360v1
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OBIC Technique Applied to Wide Bandgap Semiconductors from 100 K up to 450 K

Hassan Hamad , Dominique Planson , Christophe Raynaud , Pascal Bevilacqua
Semiconductor Science and Technology, 2017, 32 (5), ⟨10.1088/1361-6641/aa641d/meta⟩
Journal articles hal-01865068v1
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Thermally Stable Ohmic Contact to p-Type 4H-SiC Based on Ti3SiC2 Phase

Tony Abi-Tannous , Maher Soueidan , Gabriel Ferro , Mihai Lazar , Christophe Raynaud
Materials Science Forum, 2016, 858, pp.553-556. ⟨10.4028/www.scientific.net/MSF.858.553⟩
Journal articles hal-01388027v1
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Optimization of VLS Growth Process for 4H-SiC P/N Junctions

Selsabil Sejil , Mihai Lazar , Frédéric Cayrel , Davy Carole , Christian Brylinski
Materials Science Forum, 2016, 858, pp.205-208. ⟨10.4028/www.scientific.net/MSF.858.205⟩
Journal articles hal-01388031v1
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A Study on the Temperature of Ohmic Contact to p-Type SiC Based on Ti 3 SiC 2 Phase

Tony Abi-Tannous , Maher Soueidan , Gabriel Ferro , Mihai Lazar , Christophe Raynaud
IEEE Transactions on Electron Devices, 2016, 63 (6), pp.2462-2468. ⟨10.1109/TED.2016.2556725⟩
Journal articles hal-01387992v1
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Determination of 4H-SiC Ionization Rates Using OBIC Based on Two-Photon Absorption

Hassan Hamad , Christophe Raynaud , Pascal Bevilacqua , Sigo Scharnholz , Bertrand Vergne
Materials Science Forum, 2016, 858, pp.245 - 248. ⟨10.4028/www.scientific.net/MSF.858.245⟩
Journal articles hal-01388035v1
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P-Type Doping of 4H-SiC for Integrated Bipolar and Unipolar Devices

Mihai Lazar , Selsabil Sejil , L. Lalouat , Christophe Raynaud , D. Carole
Romanian Journal of Information Science and Technology, 2015, 18 (4), pp.329-342
Journal articles hal-01626119v1
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2D Electric field imagery in 4H-SiC power diodes using OBIC technique

Hassan Hamad , Pascal Bevilacqua , Dominique Planson , Christophe Raynaud , Dominique Tournier
European Physical Journal: Applied Physics, 2015, Electrical Engineering Symposium (SGE 2014), 72 (2), pp.20101. ⟨10.1051/epjap/2015150054⟩
Journal articles hal-01387989v1
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Temperature Dependence of 4H-SiC Ionization Rates Using Optical Beam Induced Current

Hassan Hamad , Christophe Raynaud , Pascal Bevilacqua , Sigo Scharnholz , Dominique Planson
Materials Science Forum, 2015, 821-823, pp.223 - 228. ⟨10.4028/www.scientific.net/MSF.821-823.223⟩
Journal articles hal-01387987v1
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VLS Grown 4H-SiC Buried P+ Layers for JFET Lateral Structures

Selsabil Sejil , Farah Laariedh , Mihai Lazar , Davy Carole , Christian Brylinski
Materials Science Forum, 2015, 821-823, pp.789 - 792. ⟨10.4028/www.scientific.net/MSF.821-823.789⟩
Journal articles hal-01387983v1
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Optical beam induced current measurements based on two-photon absorption process in 4H-SiC bipolar diodes

Hassan Hamad , Christophe Raynaud , Pascal Bevilacqua , Dominique Tournier , Bertrand Vergne
Applied Physics Letters, 2014, 104 (8), ⟨10.1063/1.4866581⟩
Journal articles hal-01387924v1
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Thermal Runaway Robustness of SiC VJFETs

Rémy Ouaida , Cyril Buttay , Anh Dung Hoang , Raphaël Riva , Dominique Bergogne
Materials Science Forum, 2013, 740-742, pp.929-933. ⟨10.4028/www.scientific.net/MSF.740-742.929⟩
Journal articles hal-00799884v1
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Thermal Stability of Silicon Carbide Power JFETs

Cyril Buttay , Rémy Ouaida , Hervé Morel , Dominique Bergogne , Christophe Raynaud
IEEE Transactions on Electron Devices, 2013, 60 (12), pp.4191 - 4198. ⟨10.1109/TED.2013.2287714⟩
Journal articles hal-00881667v1

OBIC measurements on avalanche diodes in 4H-SiC for the determination of impact ionization coefficients

Duy Minh Nguyen , Christophe Raynaud , Mihai Lazar , Gontran Pâques , Sigo Scharnholz
Materials Science Forum, 2012, 717-720, pp.545-548. ⟨10.4028/www.scientific.net/MSF.717-720.545⟩
Journal articles hal-00803059v1
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Thermal stability of silicon-carbide power diodes

Cyril Buttay , Christophe Raynaud , Hervé Morel , Gabriel Civrac , Marie-Laure Locatelli
IEEE Transactions on Electron Devices, 2012, 59 (3), pp.761-769. ⟨10.1109/TED.2011.2181390⟩
Journal articles hal-00672440v1
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SIMS Analyses Applied to Open an Optical Window in 4H-SiC Devices for Electro-Optical Measurements

Mihai Lazar , François Jomard , Duy Minh M Nguyen , Christophe Raynaud , Gontran Pâques
Materials Science Forum, 2012, 717-720, pp.885-888. ⟨10.4028/www.scientific.net/MSF.717-720.885⟩
Journal articles hal-02166414v1

Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications

Dominique Tournier , Pierre Brosselard , Christophe Raynaud , Mihai Lazar , Hervé Morel
Advanced Materials Research, 2011, Advances in Innovative Materials and Applications, pp.46-51. ⟨10.4028/www.scientific.net/AMR.324.46⟩
Journal articles hal-00799902v1

Optical triggering of SiC thyristors using UV LEDs

Nicolas Dheilly , Gontran Pâques , Sigo Scharnholz , Pascal Bevilacqua , Christophe Raynaud
Electronics Letters, 2011, 47 (7), pp.459 - 460. ⟨10.1049/el.2010.7041⟩
Journal articles hal-00661435v1

State of the art of high temperature power electronics

Cyril Buttay , Dominique Planson , Bruno Allard , Dominique Bergogne , Pascal Bevilacqua
Materials Science and Engineering: B, 2011, 176 (4), pp.283-288. ⟨10.1016/j.mseb.2010.10.003⟩
Journal articles hal-00597432v1
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Avalanche Diodes with Low Temperature Dependence in 4H-SiC Suitable for Parallel Protection

Duy Minh Nguyen , Gontran Pâques , Nicolas Dheilly , Christophe Raynaud , Dominique Tournier
Materials Science Forum, 2011, 679-680, pp.567-570. ⟨10.4028/www.scientific.net/MSF.679-680.567⟩
Journal articles hal-02168909v1

Experimental determination of impact ionization coefficients in 4H-SiC

Duy Minh Nguyen , Christophe Raynaud , Nicolas Dheilly , Mihai Lazar , Dominique Tournier
Diamond and Related Materials, 2011, 20 (3), pp.395-397. ⟨10.1016/j.diamond.2011.01.039⟩
Journal articles hal-00661429v1
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Comparison of High Voltage and High Temperature Performances of Wide Bandgap Semiconductors for vertical Power Devices

Christophe Raynaud , Dominique Tournier , Hervé Morel , Dominique Planson
Diamond and Related Materials, 2010, 19, pp.1-6. ⟨10.1016/j.diamond.2009.09.015⟩
Journal articles hal-02186368v1

Characterization of 4H-SiC Junction Barrier Schottky Diodes by Admittance vs Temperature Analyses

Christophe Raynaud , Duy Minh Nguyen , Pierre Brosselard , Amador Pérez-Tomás , Dominique Planson
Materials Science Forum, 2009, 615-617, pp.671-674. ⟨10.4028/www.scientific.net/MSF.615-617.671⟩
Journal articles hal-00391462v1

Determination of ambipolar lifetime and epilayer thickness of 5 kV SiC bipolar devices by switching transient studies

Tarek Ben Salah , Damien Risaletto , Christophe Raynaud , Kamel Besbes , Dominique Bergogne
Materials Science Forum, 2008, Materials Science Forum, Volumes 600-603, pp.1031-1034. ⟨10.4028/www.scientific.net/MSF.600-603.1031⟩
Journal articles hal-04452237v1
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OBIC Analysis of Different Edge Terminations of Planar 1.6 kV 4H-SiC Diodes

Christophe Raynaud , Daniel Loup , Phillippe Godignon , Raul Perez Rodriguez , Dominique Tournier
Materials Science Forum, 2007, MATERIALS SCIENCE FORUM, 556-557, pp.1007-1010. ⟨10.4028/www.scientific.net/MSF.556-557.1007⟩
Journal articles hal-04369314v1
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Composants de puissance en SiC. Etat de l'art

Dominique Planson , Christophe Raynaud , Pierre Brosselard , Dominique Bergogne , Mihai Lazar
European Journal of Electrical Engineering, 2006, 9 (4-5), pp.595-611
Journal articles hal-04371563v1
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P-type SiC layers formed by VLS induced selective epitaxial growth

Mihai Lazar , Christophe Jacquier , Christiane Dubois , Christophe Raynaud , Gabriel Ferro
Materials Science Forum, 2005, 483-485, pp.633-636. ⟨10.4028/www.scientific.net/MSF.483-485.633⟩
Journal articles hal-04362494v1
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Characterization of a 4H-SiC High Power Density Controlled Current Limiter

Dominique Tournier , Phillippe Godignon , Josep Montserrat , Dominique Planson , Christophe Raynaud
Materials Science Forum, 2003, 433-436, pp.871-874. ⟨10.4028/www.scientific.net/MSF.433-436.871⟩
Journal articles hal-02458100v1
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OBIC Measurements of 1.3kV 6H-SiC Bipolar Diodes Protected by Junction Termination Extension

S.R. Wang , Christophe Raynaud , Dominique Planson , Mihai Lazar , Jean-Pierre Chante
Materials Science Forum, 2003, 433-436, pp.863-866. ⟨10.4028/www.scientific.net/MSF.433-436.863⟩
Journal articles hal-04091213v1

Barrier height determination of SiC Schottky diodes by capacitance and current-voltage measurements

Christophe Raynaud , Karine Isoird , Mihai Lazar , Cm Johnson , N. Wright
Journal of Applied Physics, 2002, 91 (12), pp.9841-9847
Journal articles hal-00141477v1

Effect of some technological parameters on Fowler-Nordheim injection through tunnel oxides for non-volatile memories

S. Croci , C. Plossu , B. Balland , Christophe Raynaud , Pierre Boivin
Journal of Non-Crystalline Solids, 2001, 280 (1-3), pp.202-210
Journal articles hal-00141506v1

Silica films on silicon carbide: a review of electrical properties and device applications

Christophe Raynaud
Journal of Non-Crystalline Solids, 2001, 280 (1-3), pp.1-31
Journal articles hal-00141505v1

Calculation of theoretical capacitance-voltage characteristics of 6H-SiC metal-oxide-semiconductor structures

Christophe Raynaud
Journal of Applied Physics, 2000, 88 (1), pp.424-428
Journal articles hal-00141518v1
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Micro-irradiation experiments in MOS transistors using synchrotron radiation

J. Autran , P. Masson , N. Freud , Christophe Raynaud , C. Riekel
IEEE Transactions on Nuclear Science, 2000, 47 (3 Part 1), pp.574-579
Journal articles hal-00141515v1

Characterisation of deep level trap centres in 6H-SiC p-n junction diodes

K. Ghaffour , V. Lauer , A. Souifi , G. Guillot , Christophe Raynaud
Materials Science and Engineering: B, 1999, 66 (1-3), pp.106-110
Journal articles hal-00141523v1

Surface effects on current mechanisms in 6H-SiC n(+)pp(+) structures passivated with a deposited oxide

S. Ortolland , Christophe Raynaud , Marie-Laure Locatelli , Jean-Pierre Chante , A. Senes
Journal of Applied Physics, 1998, 84 (3), pp.1688-1692
Journal articles hal-00141583v1

Electrical characterization of silicon carbide n(+)pp(+) diodes with an N-implanted n(+) emitter

Christophe Raynaud , K. Ghaffour , S. Ortolland , Marie-Laure Locatelli , K. Souifi
Journal of Applied Physics, 1998, 84 (6), pp.3073-3077
Journal articles hal-00141570v1

Deep centers and negative temperature coefficient of the breakdown voltage of SiC p-n structures

A. A. Lebedev , S. Ortolland , Christophe Raynaud , Marie-Laure Locatelli , Dominique Planson
Semiconductors, 1997, 31 (7), pp.735-737
Journal articles hal-00141601v1

Effect of boron diffusion on the high-voltage behavior of 6H-SiC p(+)nn(+) structures

S. Ortolland , Christophe Raynaud , Jean-Pierre Chante , A. A. Lebedev , A. N. Andreev
Journal of Applied Physics, 1996, 80 (9), pp.5464-5468
Journal articles hal-00141621v1

Electrically Active Traps in Bipolar 10 kV 8 A Silicon Carbide (SiC) PiN Diodes

P Vigneshwara Raja , Christophe Raynaud , Besar Asllani , Herve Morel , Dominique Planson
International Symposium On Semiconductor Materials and Devices ISSMD 2022, Dec 2022, Bhubaneswar, India
Conference papers hal-03990840v1
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Optimized Junction Termination Extension and Ring System for 11 kV 4H-SiC BJT

Ali Ammar , Mihai Lazar , Bertrand Vergne , Sigo Scharnholz , Luong Viêt Phung
2022 International Semiconductor Conference (CAS 2022), Oct 2022, Poiana Brasov, Romania. pp.191-194, ⟨10.1109/CAS56377.2022.9934390⟩
Conference papers hal-03856578v1
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SiC lateral Schottky diode technology for integrated smart power converter

Jean-François Mogniotte , Christophe Raynaud , Mihai Lazar , Bruno Allard , Dominique Planson
2018 IEEE ICIT, Feb 2018, Lyon, France. ⟨10.1109/ICIT.2018.8352287⟩
Conference papers hal-01864545v1
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Robustness study of 1700 V 45 mΩ SiC MOSFETs

Quentin Molin , Mehdi Kanoun , Christophe Raynaud , Hervé Morel
2018 IEEE ICIT, Feb 2018, Lyon, France. ⟨10.1109/ICIT.2018.8352285⟩
Conference papers hal-01942728v1
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Repetitive short-circuit measurement on SiC MOSFET

Quentin Molin , Christophe Raynaud , Mehdi Kanoun , Hervé Morel
ECSCRM'18, Sep 2018, Birmingham, United Kingdom
Conference papers hal-01980834v1
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Mesure et analyse de la hauteur de barrière des contacts Schottky Mo sur SiC-4H

Teng Zhang , Christophe Raynaud , Dominique Planson
Symposium de Génie Electrique (SGE'18), Université de Lorraine [UL], Jul 2018, Nancy, France
Conference papers hal-02983328v1
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Multi-barrier height characterization and DLTS study on Ti/W 4H-SiC Schottky Diode

Teng Zhang , Christophe Raynaud , Dominique Planson
ECSCRM'18, Sep 2018, Birmingham, United Kingdom
Conference papers hal-02004837v1

First steps of SiC integrated electronic functions for a smart power driver dedicated to harsh environments

Jean-François Mogniotte , Mihai Lazar , Christophe Raynaud , Bruno Allard
CAS, Oct 2017, Sinaia, Romania. ⟨10.1109/SMICND.2017.8101191⟩
Conference papers hal-01646319v1
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Near breakdown voltage optical beam induced current (OBIC) on 4H-SiC bipolar diode

Dominique Planson , Besar Asllani , Hassan Hamad , Marie-Laure Locatelli , Lumei Wei
International Conference on Silicon Carbide and Related Materials 2017 (ICSCRM 2017), Sep 2017, Washington, United States. pp.TH.DP.4
Conference papers hal-02138767v1
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Realization and characterization of carbonic layers on 4H-SiC for electrochemical detections

Julien Pezard , V. Souliere , Mihai Lazar , Naoufel Haddour , François Buret
ECSCRM'16, Sep 2016, Halkidiki, Greece. pp.WeP-52
Conference papers hal-02138738v1
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Very High Sustainable Forward Current Densities on 4H-SiC P+N- Junctions formed by localized VLS P+ epitaxy

Selsabil Sejil , Loïc Lalouat , Mihai Lazar , Davy Carole , Christian Brylinski
ECSCRM'16, Sep 2016, Halkidiki, Greece
Conference papers hal-02138729v1
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Localized VLS Epitaxy Process as a P-type Doping Alternative Technique for 4H-SiC P/N Junctions

Selsabil Sejil , Mihai Lazar , Davy Carole , Christian Brylinski , Dominique Planson
Semiconductor Interface Specialists Conference (SISC 2015), Dec 2015, Arlington, United States
Conference papers hal-02428659v1
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Classic and alternative methods of p-type doping 4H-SiC for integrated lateral devices

Mihai Lazar , Davy Carole , Christophe Raynaud , Gabriel Ferro , Selsabil Sejil
CAS, Oct 2015, Sinaia, Romania. pp.145 - 148, ⟨10.1109/SMICND.2015.7355190⟩
Conference papers hal-01388019v1
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Thermally stable ohmic contact to p-type 4H-SiC based on Ti3SiC2 phase

Tony Abi-Tannous , Maher Soueidan , G. Ferro , Mihai Lazar , Christophe Raynaud
ICSCRM, Oct 2015, Giardini Naxos, Italy
Conference papers hal-02138520v1
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Lifetime of holes determination in 4H-SiC using two-photon optical beam induced current method

Hassan Hamad , Christophe Raynaud , Pascal Bevilacqua , Dominique Planson
CAS, Oct 2015, Sinaia, Romania. ⟨10.1109/SMICND.2015.7355226⟩
Conference papers hal-01388024v1
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Imagerie 2D du champ électrique dans les diodes SiC-4H haute tension par la technique OBIC

Hassan Hamad , Pascal Bevilacqua , Dominique Planson , Christophe Raynaud , Dominique Tournier
Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France
Conference papers hal-01065307v1

Two-dimensional Optical Beam Induced Current measurements in 4H-SiC bipolar diodes

Hassan Hamad , Pascal Bevilacqua , Christophe Raynaud , Dominique Planson
2014 IEEE PRIME, Jun 2014, Grenoble, France. ⟨10.1109/PRIME.2014.6872761⟩
Conference papers hal-01388043v1
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Temperature Dependence of 4H-SiC Ionization Rates Using Optical Beam Induced Current

Hassan Hamad , Christophe Raynaud , Pascal Bevilacqua , Sigo Scharnholz , Dominique Planson
ECSCRM'14, Sep 2014, Grenoble, France. pp.MO2-IP-08
Conference papers hal-02133683v1
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Wide bandgap semiconductors for ultra high voltage devices. Design and characterization aspects

Dominique Planson , Pierre Brosselard , Karine Isoird , Mihai Lazar , Luong Viêt Phung
CAS, Oct 2014, Sinaia, Romania. pp.35 - 40, ⟨10.1109/SMICND.2014.6966383⟩
Conference papers hal-01388002v1
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4H-SiC P-N junctions realized by VLS for JFET lateral structures

Selsabil Sejil , Farah Laariedh , Mihai Lazar , Davy Carole , Christian Brylinski
ECSCRM'14, Sep 2014, Grenoble, France. pp.TU-P-61
Conference papers hal-02133686v1
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Thermal stability of SiC JFETs in conduction mode

Rémy Ouaida , Cyril Buttay , Raphaël Riva , Dominique Bergogne , Christophe Raynaud
EPE, Sep 2013, Lille, France. paper 223, ⟨10.1109/EPE.2013.6631881⟩
Conference papers hal-00874471v1
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Thermal Runaway Robustness of SiC VJFETs

Rémy Ouaida , Cyril Buttay , Anh Dung Hoang , Raphaël Riva , Dominique Bergogne
CSCRM, Sep 2012, Saint-Pétersbourg, Russia. 2p
Conference papers hal-00759975v2

OBIC measurements on avalanche diodes in 4H-SiC for the determination of impact ionization coefficients

Duy Minh Nguyen , Christophe Raynaud , Mihai Lazar , Gontran Pâques , Sigo Scharnholz
CSCRM, Sep 2011, Cleveland, United States
Conference papers hal-00747298v1
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SIMS analyses applied to open an optical window in 4H-SiC devices for electro-optical measurements

Mihai Lazar , François Jomard , Duy Minh Nguyen , Christophe Raynaud , Gontran Pâques
ICSCRM, Sep 2011, Cleveland, United States
Conference papers hal-00747300v1
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Die Attach of Power Devices Using Silver Sintering - Bonding Process Optimization and Characterization

Cyril Buttay , Amandine Masson , Jianfeng Li , Mark C. Johnson , Mihai Lazar
HiTEN 2011, Jul 2011, Oxford, United Kingdom. pp.1-7
Conference papers hal-00672619v1

Thermal Requirements of SiC Power Devices

Cyril Buttay , Christophe Raynaud , Hervé Morel , Gabriel Civrac , Marie-Laure Locatelli
6th European Advanced Technology Workshop on Micropackaging and Thermal Management, Feb 2011, La Rochelle, France
Conference papers hal-00672631v1

Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications

Dominique Tournier , Pierre Brosselard , Christophe Raynaud , Mihai Lazar , Hervé Morel
CIMA, Mar 2011, Beyrouth, Lebanon. pp.CD
Conference papers hal-00661500v1

Avalanche Diodes with Low Temperature Dependence in 4H-SiC Suitable for Parallel Protection

Duy Minh Nguyen , Gontran Pâques , Nicolas Dheilly , Christophe Raynaud , Dominique Tournier
CSCRM, Aug 2010, Oslo, Norway
Conference papers hal-00661470v1
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Contact ohmique de faible résistivité sur SiC-4H dopé type-P

M Soueidan , Mihai Lazar , D. Tournier , Dominique Planson , Christophe Raynaud
4eme colloque sur les Matériaux du Génie Electrique, May 2008, Toulouse, France
Conference papers hal-04606381v1
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SiC Power Semiconductor Devices for new Applications in Power Electronics

Dominique Planson , Dominique Tournier , Pascal Bevilacqua , Nicolas Dheilly , Hervé Morel
13th IEEE PEMC, Sep 2008, Poznan, Poland. pp.2457 - 2463, ⟨10.1109/EPEPEMC.2008.4635632⟩
Conference papers hal-00373016v1
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Characterization of 4H-SiC junction barrier Schottky diodes by admittance vs. temperature analyses

Christophe Raynaud , D M Nguyen , Pierre Brosselard , A Pérez-Tomás , Dominique Planson
European Conference on Silicon Carbide and Related Materials ECSCRM 2008, Sep 2008, Barcelone, Spain
Conference papers hal-03331775v1

Normally-on devices and circuits, SiC and high temperature : using SiCJFETs in power converters

Dominique Bergogne , Hervé Morel , Dominique Tournier , Bruno Allard , Dominique Planson
5th CIPS, Mar 2008, Nuremberg, Germany. pp.08.2
Conference papers hal-00372982v1
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Determination of ambipolar lifetime and epilayer thickness of 5 kV SiC bipolar devices by switching transient studies

Tarek Ben Salah , Damien Risaletto , Christophe Raynaud , Kamel Besbes , Dominique Bergogne
ICSCRM'2007, Oct 2007, Otsu, Japan. pp.1031-1034, ⟨10.4028/www.scientific.net/MSF.600-603.1031⟩
Conference papers hal-02958620v1
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Comparison of electrical properties of ohmic contact realized on p-type 4H-SiC

D M Nguyen , Christophe Raynaud , Mihai Lazar , H Vang , Dominique Planson
ICSCRM'2007, Oct 2007, Otsu, Japan
Conference papers hal-02961607v1
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Optimisation de la structure double RESURF d’un transistor JFET latéral SiC-4H pour le développement de convertisseurs de puissance intégrés

Johnny Gié , Mihai Lazar , Pierre Brosselard , Dominique Planson , Christophe Raynaud
11ème colloque Electronique de Puissance du Futur, Jul 2006, Grenoble, France
Conference papers hal-04619604v1

OBIC Analysis of Different Edge Terminations of Planar 1.6 kV 4H-SiC Diodes

Christophe Raynaud , Daniel Loup , Philippe Godignon , Raul Perez Rodriguez , Dominique Tournier
CSCRM, Oct 2006, Newcastle upon Tyne, United Kingdom. pp.1007-1010, ⟨10.4028/www.scientific.net/MSF.556-557.1007⟩
Conference papers hal-00368922v1
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Diode PiN SiC-4H 1,2kV sur épi-wafer SiCrystal

Heu Vang , Christophe Raynaud , Pierre Brosselard , Mihai Lazar , Pierre Cremillieu
11ème colloque Electronique de Puissance du Futur, Jul 2006, Grenoble, France
Conference papers hal-04618792v1
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P-type SiC layers formed by VLS induced selective epitaxial growth

Mihai Lazar , C Jacquier , Ch Dubois , Christophe Raynaud , G Ferro
European Conference on Silion Carbide and Related Materials (ECSCRM 2004), Sep 2004, Bologne, Italy
Conference papers hal-02953086v1
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A 3.5 kV thyristor in 4H-SiC with a JTE periphery

Pierre Brosselard , Thierry Bouchet , Dominique Planson , Sigo Scharnholz , Gontran Pâques
European Conference on Silion Carbide and Related Materials (ECSCRM 2004), Sep 2004, Bologne, Italy
Conference papers hal-02953080v1
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Silicon Carbide Controlled Current Limiter, Current Limitation Strategies, Foreseen Applications and Benefits

Dominique Planson , Dominique Tournier , Jean-Pierre Chante , Pascal Bevilacqua , Christophe Raynaud
International Power Electronics and Motion Control (IPEMC'04), Aug 2004, Xi'an, China
Conference papers hal-02468376v1
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SiC-based current limiter devices

Jean-Pierre Chante , Dominique Tournier , Dominique Planson , Christophe Raynaud , Mihai Lazar
International Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France. pp.951-956, ⟨10.4028/www.scientific.net/MSF.457-460.951⟩
Conference papers hal-04032970v1
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Design, fabrication and characterisation of 5 kV 4H-SiC p + n planar bipolar diodes protected by junction termination extension

Christophe Raynaud , M. Lazar , Dominique Planson , J.-P Chante , Z. Sassi
International Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France
Conference papers hal-02498145v1

Silicon Carbide specific components for power electronics system protection

J.-P Chante , Dominique Planson , Christophe Raynaud , Marie-Laure Locatelli , M. Lazar
International Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France
Conference papers hal-02503449v1
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Influence of different peripheral protections on the breakover voltage of a 4H-SiC GTO thyristor

Pierre Brosselard , Volker Zorngiebel , Dominique Planson , Sigo Scharnholz , J.-P Chante
International Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France
Conference papers hal-02503456v1
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Design and simulation of a planar anode GTO thyristor on SiC

Pierre Brosselard , Dominique Planson , Sigo Scharnholz , V. Zorngiebel , Mihai Lazar
CAS (International Semiconductor Conference), Sep 2003, Sinaia, Romania. pp.222, ⟨10.1109/SMICND.2003.1252421⟩
Conference papers hal-00410085v1
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Electrothermal simulations of silicon carbide current limiting devices

Dominique Planson , J.P. Chante , M. Lazar , P. Brosselard , Christophe Raynaud
2003 IEEE International Conference on Industrial Technology, Dec 2003, Maribor, Slovenia. pp.1135-1140, ⟨10.1109/ICIT.2003.1290823⟩
Conference papers hal-02498210v1
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OBIC measurements on 1.3 kV 6H-SiC bipolar diodes protected by Junction Lateral Extension

S.R. Wang , Christophe Raynaud , Dominique Planson , Mihai Lazar , Jean-Pierre Chante
European Conference on Silicon Carbide and Related Materials (ECSCRM 2002), Sep 2002, Linköping, Sweden
Conference papers hal-02464381v1
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Very low R/sub ON/ measured on 4H-SiC accu-MOSFET high power device

F. Nallet , P. Godignon , Dominique Planson , Christophe Raynaud , J.P. P Chante
14th International Symposium on Power Semiconductor Devices and ICs, Jun 2002, Sante Fe, United States. pp.209-212, ⟨10.1109/ISPSD.2002.1016208⟩
Conference papers hal-02471269v1
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Contact resistivity of Al/Ti ohmic contacts on p-type ion implanted 4H and 6H-SiC

Roberta Nipoti , Francesco Moscatelli , Andrea Scorzoni , Antonella Poggi , Gian Carlo Cardinali
2002 MRS Fall Meeting, Dec 2002, Boston, United States. ⟨10.1557/PROC-742-K6.2⟩
Conference papers hal-02485106v1
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Substrat SiCOI : Avancées vers les applications « System on Chip »

Nicolas Daval , François Templier , Fabrice Letertre , Marie-Laure Locatelli , Dominique Planson
EPF2002 - Colloque 2002, Electronique de Puissance du Futur, Nov 2002, Montpellier, France
Conference papers hal-04400220v1
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Limiteur de courant à forte densité de puissance en carbure de silicium

Dominique Tournier , Philippe Godignon , Josep Montserrat , Dominique Planson , Christophe Raynaud
Electronique de Puissance du Futur (EPF 2002), Nov 2002, Montpellier (FR), France
Conference papers hal-04398450v1

Characterization of a 4H-SiC High Power Density Controlled Current Limiter

Dominique Tournier , Xavier Jorda , Josep Montserrat , Dominique Planson , Christophe Raynaud
European Conference on Silicon Carbide and Related Materials (ECSCRM 2002), Sep 2002, Linköping, Sweden
Conference papers hal-02458130v1

SiC On Insulator as substrate for power Schottky diodes

N. Daval , F Templier , F. Letertre , Dominique Planson , Léa Di Cioccio
European Conference on Silicon Carbide and Related Materials (ECSCRM 2002), Sep 2002, Linköping, Sweden
Conference papers hal-02464356v1

Study of 6H-SiC high voltage bipolar diodes under reverse biases

Karine Isoird , Mihai Lazar , Laurent Ottaviani , Marie-Laure Locatelli , Christophe Raynaud
European Materials Research Society (E-MRS Spring Meeting) 2001, Jun 2001, Strasbourg, France
Conference papers hal-03712596v1
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Study of 4H-SiC high voltage bipolar diodes under reverse biases using electrical and Obic characterization

K Isoird , M Lazar , Marie-Laure Locatelli , Christophe Raynaud , Dominique Planson
ICSCRM, Oct 2001, Tsukuba, Japan
Conference papers hal-02975956v1

Bipolar silicon carbide power diodes realized by aluminum implantations and high temperature rf-annealing

Mihai Lazar , Karine Isoird , Laurent Ottaviani , Marie-Laure Locatelli , Christophe Raynaud
43rd Electronic Materials Conference (EMC 2001), Jun 2001, Notre Dame, IN, United States
Conference papers hal-02275712v1
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4H-SiC bipolar power diodes realized by ion implantation

M. Lazar , Dominique Planson , K. Isoird , Marie-Laure Locatelli , Christophe Raynaud
CAS 2001 International Semiconductor Conference, Oct 2001, Sinaia, Romania. pp.349-352, ⟨10.1109/SMICND.2001.967481⟩
Conference papers hal-02145397v1
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Realization of a High Current and Low RON 600V Current Limiting Device

F Nallet , P Godignon , Dominique Planson , Christophe Raynaud , Jean-Pierre P Chante
International Conference on Silicon Carbide and Related Materials, Oct 2001, Tsukuba, Japan
Conference papers hal-02975963v1
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A comparative study of high temperature Aluminium post-implantation annealing in 6H and 4H-SiC, non-uniformity temperature effects

M. Lazar , Christophe Raynaud , Dominique Planson , Marie-Laure Locatelli , K. Isoird
ICSCRM, Oct 2001, Tsukuba, Japan
Conference papers hal-02476227v1
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The negative temperature coefficient of the breakdown voltage of SiC p-n structures and deep centers in SiC

A A Lebedev , A M Strel'Chuk , S. Ortolland , Christophe Raynaud , Marie-Laure Locatelli
International Conference on Silicon Carbide and Related Materials ICSCRM'95, Sep 1995, Kyoto, Japan
Conference papers hal-03712441v1

Optical Beam Induced Current Measurements: principles and applications to SiC device characterisation

Christophe Raynaud , Duy Minh Nguyen , Nicolas Dheilly , Dominique Tournier , Pierre Brosselard
Peter Friedrichs, Tsunenobu Kimoto, Lothar Ley, Gerhard Pensl. Silicon Carbide: Volume 1: Growth, Defects, and Novel Applications, Wiley, 319-340 (chapitre 12), 2009
Book sections hal-00661529v1