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Electrically Active Traps in Bipolar 10 kV 8 A Silicon Carbide (SiC) PiN Diodes
P Vigneshwara Raja
,
Christophe Raynaud
,
Besar Asllani
,
Herve Morel
,
Dominique Planson
International Symposium On Semiconductor Materials and Devices ISSMD 2022, Dec 2022, Bhubaneswar, India
Communication dans un congrès
hal-03990840
v1
|
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Optimized Junction Termination Extension and Ring System for 11 kV 4H-SiC BJT
Ali Ammar
,
Mihai Lazar
,
Bertrand Vergne
,
Sigo Scharnholz
,
Luong Viêt Phung
et al.
Communication dans un congrès
hal-03856578
v1
|
|
Robustness study of 1700 V 45 mΩ SiC MOSFETs
Quentin Molin
,
Mehdi Kanoun
,
Christophe Raynaud
,
Hervé Morel
Communication dans un congrès
hal-01942728
v1
|
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Multi-barrier height characterization and DLTS study on Ti/W 4H-SiC Schottky Diode
Teng Zhang
,
Christophe Raynaud
,
Dominique Planson
ECSCRM'18, Sep 2018, Birmingham, United Kingdom
Communication dans un congrès
hal-02004837
v1
|
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Mesure et analyse de la hauteur de barrière des contacts Schottky Mo sur SiC-4H
Teng Zhang
,
Christophe Raynaud
,
Dominique Planson
Symposium de Génie Electrique (SGE'18), Université de Lorraine [UL], Jul 2018, Nancy, France
Communication dans un congrès
hal-02983328
v1
|
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SiC lateral Schottky diode technology for integrated smart power converter
Jean-François Mogniotte
,
Christophe Raynaud
,
Mihai Lazar
,
Bruno Allard
,
Dominique Planson
Communication dans un congrès
hal-01864545
v1
|
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Repetitive short-circuit measurement on SiC MOSFET
Quentin Molin
,
Christophe Raynaud
,
Mehdi Kanoun
,
Hervé Morel
ECSCRM'18, Sep 2018, Birmingham, United Kingdom
Communication dans un congrès
hal-01980834
v1
|
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Near breakdown voltage optical beam induced current (OBIC) on 4H-SiC bipolar diode
Dominique Planson
,
Besar Asllani
,
Hassan Hamad
,
Marie-Laure Locatelli
,
Lumei Wei
et al.
International Conference on Silicon Carbide and Related Materials 2017 (ICSCRM 2017), Sep 2017, Washington, United States. pp.TH.DP.4
Communication dans un congrès
hal-02138767
v1
|
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First steps of SiC integrated electronic functions for a smart power driver dedicated to harsh environments
Jean-François Mogniotte
,
Mihai Lazar
,
Christophe Raynaud
,
Bruno Allard
Communication dans un congrès
hal-01646319
v1
|
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Realization and characterization of carbonic layers on 4H-SiC for electrochemical detections
Julien Pezard
,
V. Souliere
,
Mihai Lazar
,
Naoufel Haddour
,
François Buret
et al.
ECSCRM'16, Sep 2016, Halkidiki, Greece. pp.WeP-52
Communication dans un congrès
hal-02138738
v1
|
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Very High Sustainable Forward Current Densities on 4H-SiC P+N- Junctions formed by localized VLS P+ epitaxy
Selsabil Sejil
,
Loïc Lalouat
,
Mihai Lazar
,
Davy Carole
,
Christian Brylinski
et al.
ECSCRM'16, Sep 2016, Halkidiki, Greece
Communication dans un congrès
hal-02138729
v1
|
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Localized VLS Epitaxy Process as a P-type Doping Alternative Technique for 4H-SiC P/N Junctions
Selsabil Sejil
,
Mihai Lazar
,
Davy Carole
,
Christian Brylinski
,
Dominique Planson
et al.
Semiconductor Interface Specialists Conference (SISC 2015), Dec 2015, Arlington, United States
Communication dans un congrès
hal-02428659
v1
|
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Classic and alternative methods of p-type doping 4H-SiC for integrated lateral devices
Mihai Lazar
,
Davy Carole
,
Christophe Raynaud
,
Gabriel Ferro
,
Selsabil Sejil
et al.
Communication dans un congrès
hal-01388019
v1
|
|
Lifetime of holes determination in 4H-SiC using two-photon optical beam induced current method
Hassan Hamad
,
Christophe Raynaud
,
Pascal Bevilacqua
,
Dominique Planson
Communication dans un congrès
hal-01388024
v1
|
|
Thermally stable ohmic contact to p-type 4H-SiC based on Ti3SiC2 phase
Tony Abi-Tannous
,
Maher Soueidan
,
G. Ferro
,
Mihai Lazar
,
Christophe Raynaud
et al.
ICSCRM, Oct 2015, Giardini Naxos, Italy
Communication dans un congrès
hal-02138520
v1
|
|
Temperature Dependence of 4H-SiC Ionization Rates Using Optical Beam Induced Current
Hassan Hamad
,
Christophe Raynaud
,
Pascal Bevilacqua
,
Sigo Scharnholz
,
Dominique Planson
ECSCRM'14, Sep 2014, Grenoble, France. pp.MO2-IP-08
Communication dans un congrès
hal-02133683
v1
|
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4H-SiC P-N junctions realized by VLS for JFET lateral structures
Selsabil Sejil
,
Farah Laariedh
,
Mihai Lazar
,
Davy Carole
,
Christian Brylinski
et al.
ECSCRM'14, Sep 2014, Grenoble, France. pp.TU-P-61
Communication dans un congrès
hal-02133686
v1
|
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Imagerie 2D du champ électrique dans les diodes SiC-4H haute tension par la technique OBIC
Hassan Hamad
,
Pascal Bevilacqua
,
Dominique Planson
,
Christophe Raynaud
,
Dominique Tournier
et al.
Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France
Communication dans un congrès
hal-01065307
v1
|
|
Two-dimensional Optical Beam Induced Current measurements in 4H-SiC bipolar diodes
Hassan Hamad
,
Pascal Bevilacqua
,
Christophe Raynaud
,
Dominique Planson
Communication dans un congrès
hal-01388043
v1
|
|
Wide bandgap semiconductors for ultra high voltage devices. Design and characterization aspects
Dominique Planson
,
Pierre Brosselard
,
Karine Isoird
,
Mihai Lazar
,
Luong Viêt Phung
et al.
Communication dans un congrès
hal-01388002
v1
|
|
Thermal stability of SiC JFETs in conduction mode
Rémy Ouaida
,
Cyril Buttay
,
Raphaël Riva
,
Dominique Bergogne
,
Christophe Raynaud
et al.
Communication dans un congrès
hal-00874471
v1
|
|
SIMS analyses applied to open an optical window in 4H-SiC devices for electro-optical measurements
Mihai Lazar
,
François Jomard
,
Duy Minh Nguyen
,
Christophe Raynaud
,
Gontran Pâques
et al.
ICSCRM, Sep 2011, Cleveland, United States
Communication dans un congrès
hal-00747300
v1
|
|
Thermal Runaway Robustness of SiC VJFETs
Rémy Ouaida
,
Cyril Buttay
,
Anh Dung Hoang
,
Raphaël Riva
,
Dominique Bergogne
et al.
CSCRM, Sep 2012, Saint-Pétersbourg, Russia. 2p
Communication dans un congrès
hal-00759975
v2
|
|
Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications
Dominique Tournier
,
Pierre Brosselard
,
Christophe Raynaud
,
Mihai Lazar
,
Hervé Morel
et al.
CIMA, Mar 2011, Beyrouth, Lebanon. pp.CD
Communication dans un congrès
hal-00661500
v1
|
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OBIC measurements on avalanche diodes in 4H-SiC for the determination of impact ionization coefficients
Duy Minh Nguyen
,
Christophe Raynaud
,
Mihai Lazar
,
Gontran Pâques
,
Sigo Scharnholz
et al.
CSCRM, Sep 2011, Cleveland, United States
Communication dans un congrès
hal-00747298
v1
|
|
Avalanche Diodes with Low Temperature Dependence in 4H-SiC Suitable for Parallel Protection
Duy Minh Nguyen
,
Gontran Pâques
,
Nicolas Dheilly
,
Christophe Raynaud
,
Dominique Tournier
et al.
CSCRM, Aug 2010, Oslo, Norway
Communication dans un congrès
hal-00661470
v1
|
|
Thermal Requirements of SiC Power Devices
Cyril Buttay
,
Christophe Raynaud
,
Hervé Morel
,
Gabriel Civrac
,
Marie-Laure Locatelli
et al.
6th European Advanced Technology Workshop on Micropackaging and Thermal Management, Feb 2011, La Rochelle, France
Communication dans un congrès
hal-00672631
v1
|
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Die Attach of Power Devices Using Silver Sintering - Bonding Process Optimization and Characterization
Cyril Buttay
,
Amandine Masson
,
Jianfeng Li
,
Mark C. Johnson
,
Mihai Lazar
et al.
HiTEN 2011, Jul 2011, Oxford, United Kingdom. pp.1-7
Communication dans un congrès
hal-00672619
v1
|
|
SiC Power Semiconductor Devices for new Applications in Power Electronics
Dominique Planson
,
Dominique Tournier
,
Pascal Bevilacqua
,
Nicolas Dheilly
,
Hervé Morel
et al.
Communication dans un congrès
hal-00373016
v1
|
|
Normally-on devices and circuits, SiC and high temperature : using SiCJFETs in power converters
Dominique Bergogne
,
Hervé Morel
,
Dominique Tournier
,
Bruno Allard
,
Dominique Planson
et al.
5th CIPS, Mar 2008, Nuremberg, Germany. pp.08.2
Communication dans un congrès
hal-00372982
v1
|
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Characterization of 4H-SiC junction barrier Schottky diodes by admittance vs. temperature analyses
Christophe Raynaud
,
D M Nguyen
,
Pierre Brosselard
,
A Pérez-Tomás
,
Dominique Planson
et al.
European Conference on Silicon Carbide and Related Materials ECSCRM 2008, Sep 2008, Barcelone, Spain
Communication dans un congrès
hal-03331775
v1
|
|
Contact ohmique de faible résistivité sur SiC-4H dopé type-P
M Soueidan
,
Mihai Lazar
,
D. Tournier
,
Dominique Planson
,
Christophe Raynaud
et al.
4eme colloque sur les Matériaux du Génie Electrique, May 2008, Toulouse, France
Communication dans un congrès
hal-04606381
v1
|
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Comparison of electrical properties of ohmic contact realized on p-type 4H-SiC
D M Nguyen
,
Christophe Raynaud
,
Mihai Lazar
,
H Vang
,
Dominique Planson
ICSCRM'2007, Oct 2007, Otsu, Japan
Communication dans un congrès
hal-02961607
v1
|
|
OBIC Analysis of Different Edge Terminations of Planar 1.6 kV 4H-SiC Diodes
Christophe Raynaud
,
Daniel Loup
,
Philippe Godignon
,
Raul Perez Rodriguez
,
Dominique Tournier
et al.
Communication dans un congrès
hal-00368922
v1
|
|
Determination of ambipolar lifetime and epilayer thickness of 5 kV SiC bipolar devices by switching transient studies
Tarek Ben Salah
,
Damien Risaletto
,
Christophe Raynaud
,
Kamel Besbes
,
Dominique Bergogne
et al.
Communication dans un congrès
hal-02958620
v1
|
|
Optimisation de la structure double RESURF d’un transistor JFET latéral SiC-4H pour le développement de convertisseurs de puissance intégrés
Johnny Gié
,
Mihai Lazar
,
Pierre Brosselard
,
Dominique Planson
,
Christophe Raynaud
11ème colloque Electronique de Puissance du Futur, Jul 2006, Grenoble, France
Communication dans un congrès
hal-04619604
v1
|
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Diode PiN SiC-4H 1,2kV sur épi-wafer SiCrystal
Heu Vang
,
Christophe Raynaud
,
Pierre Brosselard
,
Mihai Lazar
,
Pierre Cremillieu
et al.
11ème colloque Electronique de Puissance du Futur, Jul 2006, Grenoble, France
Communication dans un congrès
hal-04618792
v1
|
|
P-type SiC layers formed by VLS induced selective epitaxial growth
Mihai Lazar
,
C Jacquier
,
Ch Dubois
,
Christophe Raynaud
,
G Ferro
et al.
European Conference on Silion Carbide and Related Materials (ECSCRM 2004), Sep 2004, Bologne, Italy
Communication dans un congrès
hal-02953086
v1
|
|
HIGH VOLTAGE AND SPECIFIC POWER SILICON CARBIDE DEVICES
Dominique Planson
,
Marie-Laure Locatelli
,
Mihai Lazar
,
Christophe Raynaud
,
Jean-Pierre Chante
et al.
10ème colloque Electronique de Puissance du Futur, Sep 2004, Toulouse, France
Communication dans un congrès
hal-04621819
v1
|
|
Silicon Carbide Controlled Current Limiter, Current Limitation Strategies, Foreseen Applications and Benefits
Dominique Planson
,
Dominique Tournier
,
Jean-Pierre Chante
,
Pascal Bevilacqua
,
Christophe Raynaud
et al.
International Power Electronics and Motion Control (IPEMC'04), Aug 2004, Xi'an, China
Communication dans un congrès
hal-02468376
v1
|
|
SiC-based current limiter devices
Jean-Pierre Chante
,
Dominique Tournier
,
Dominique Planson
,
Christophe Raynaud
,
Mihai Lazar
et al.
Communication dans un congrès
hal-04032970
v1
|
|
Conception d'un transistor JFET 5 kV en SiC-4H
Pierre Brosselard
,
Dominique Planson
,
Léa Di Cioccio
,
Thierry Billon
,
Sigo Scharnholz
et al.
10ème colloque Electronique de Puissance du Futur, Sep 2004, Toulouse, France
Communication dans un congrès
hal-04621465
v1
|
|
A 3.5 kV thyristor in 4H-SiC with a JTE periphery
Pierre Brosselard
,
Thierry Bouchet
,
Dominique Planson
,
Sigo Scharnholz
,
Gontran Pâques
et al.
European Conference on Silion Carbide and Related Materials (ECSCRM 2004), Sep 2004, Bologne, Italy
Communication dans un congrès
hal-02953080
v1
|
|
Electrothermal simulations of silicon carbide current limiting devices
Dominique Planson
,
J.P. Chante
,
M. Lazar
,
P. Brosselard
,
Christophe Raynaud
et al.
Communication dans un congrès
hal-02498210
v1
|
|
Design, fabrication and characterisation of 5 kV 4H-SiC p + n planar bipolar diodes protected by junction termination extension
Christophe Raynaud
,
M. Lazar
,
Dominique Planson
,
J.-P Chante
,
Z. Sassi
International Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France
Communication dans un congrès
hal-02498145
v1
|
|
Influence of different peripheral protections on the breakover voltage of a 4H-SiC GTO thyristor
Pierre Brosselard
,
Volker Zorngiebel
,
Dominique Planson
,
Sigo Scharnholz
,
J.-P Chante
et al.
International Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France
Communication dans un congrès
hal-02503456
v1
|
|
Silicon Carbide specific components for power electronics system protection
J.-P Chante
,
Dominique Planson
,
Christophe Raynaud
,
Marie-Laure Locatelli
,
M. Lazar
et al.
International Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France
Communication dans un congrès
hal-02503449
v1
|
|
Design and simulation of a planar anode GTO thyristor on SiC
Pierre Brosselard
,
Dominique Planson
,
Sigo Scharnholz
,
V. Zorngiebel
,
Mihai Lazar
et al.
Communication dans un congrès
hal-00410085
v1
|
|
Contact resistivity of Al/Ti ohmic contacts on p-type ion implanted 4H and 6H-SiC
Roberta Nipoti
,
Francesco Moscatelli
,
Andrea Scorzoni
,
Antonella Poggi
,
Gian Carlo Cardinali
et al.
Communication dans un congrès
hal-02485106
v1
|
|
Substrat SiCOI : Avancées vers les applications « System on Chip »
Nicolas Daval
,
François Templier
,
Fabrice Letertre
,
Marie-Laure Locatelli
,
Dominique Planson
et al.
EPF2002 - Colloque 2002, Electronique de Puissance du Futur, Nov 2002, Montpellier, France
Communication dans un congrès
hal-04400220
v1
|
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Very low R/sub ON/ measured on 4H-SiC accu-MOSFET high power device
F. Nallet
,
P. Godignon
,
Dominique Planson
,
Christophe Raynaud
,
J.P. P Chante
14th International Symposium on Power Semiconductor Devices and ICs, Jun 2002, Sante Fe, United States. pp.209-212, ⟨10.1109/ISPSD.2002.1016208⟩
Communication dans un congrès
hal-02471269
v1
|
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OBIC measurements on 1.3 kV 6H-SiC bipolar diodes protected by Junction Lateral Extension
S.R. Wang
,
Christophe Raynaud
,
Dominique Planson
,
Mihai Lazar
,
Jean-Pierre Chante
European Conference on Silicon Carbide and Related Materials (ECSCRM 2002), Sep 2002, Linköping, Sweden
Communication dans un congrès
hal-02464381
v1
|
|
Characterization of a 4H-SiC High Power Density Controlled Current Limiter
Dominique Tournier
,
Xavier Jorda
,
Josep Montserrat
,
Dominique Planson
,
Christophe Raynaud
et al.
European Conference on Silicon Carbide and Related Materials (ECSCRM 2002), Sep 2002, Linköping, Sweden
Communication dans un congrès
hal-02458130
v1
|
|
Limiteur de courant à forte densité de puissance en carbure de silicium
Dominique Tournier
,
Philippe Godignon
,
Josep Montserrat
,
Dominique Planson
,
Christophe Raynaud
et al.
Electronique de Puissance du Futur (EPF 2002), Nov 2002, Montpellier (FR), France
Communication dans un congrès
hal-04398450
v1
|
|
SiC On Insulator as substrate for power Schottky diodes
N. Daval
,
F Templier
,
F. Letertre
,
Dominique Planson
,
Léa Di Cioccio
et al.
European Conference on Silicon Carbide and Related Materials (ECSCRM 2002), Sep 2002, Linköping, Sweden
Communication dans un congrès
hal-02464356
v1
|
|
Study of 6H-SiC high voltage bipolar diodes under reverse biases
Karine Isoird
,
Mihai Lazar
,
Laurent Ottaviani
,
Marie-Laure Locatelli
,
Christophe Raynaud
et al.
European Materials Research Society (E-MRS Spring Meeting) 2001, Jun 2001, Strasbourg, France
Communication dans un congrès
hal-03712596
v1
|
|
Realization of a High Current and Low RON 600V Current Limiting Device
F Nallet
,
P Godignon
,
Dominique Planson
,
Christophe Raynaud
,
Jean-Pierre P Chante
International Conference on Silicon Carbide and Related Materials, Oct 2001, Tsukuba, Japan
Communication dans un congrès
hal-02975963
v1
|
|
4H-SiC bipolar power diodes realized by ion implantation
M. Lazar
,
Dominique Planson
,
K. Isoird
,
Marie-Laure Locatelli
,
Christophe Raynaud
et al.
Communication dans un congrès
hal-02145397
v1
|
|
A comparative study of high temperature Aluminium post-implantation annealing in 6H and 4H-SiC, non-uniformity temperature effects
M. Lazar
,
Christophe Raynaud
,
Dominique Planson
,
Marie-Laure Locatelli
,
K. Isoird
et al.
ICSCRM, Oct 2001, Tsukuba, Japan
Communication dans un congrès
hal-02476227
v1
|
|
Study of 4H-SiC high voltage bipolar diodes under reverse biases using electrical and Obic characterization
K Isoird
,
M Lazar
,
Marie-Laure Locatelli
,
Christophe Raynaud
,
Dominique Planson
et al.
ICSCRM, Oct 2001, Tsukuba, Japan
Communication dans un congrès
hal-02975956
v1
|
|
Bipolar silicon carbide power diodes realized by aluminum implantations and high temperature rf-annealing
Mihai Lazar
,
Karine Isoird
,
Laurent Ottaviani
,
Marie-Laure Locatelli
,
Christophe Raynaud
et al.
43rd Electronic Materials Conference (EMC 2001), Jun 2001, Notre Dame, IN, United States
Communication dans un congrès
hal-02275712
v1
|
|
The negative temperature coefficient of the breakdown voltage of SiC p-n structures and deep centers in SiC
A A Lebedev
,
A M Strel'Chuk
,
S. Ortolland
,
Christophe Raynaud
,
Marie-Laure Locatelli
et al.
International Conference on Silicon Carbide and Related Materials ICSCRM'95, Sep 1995, Kyoto, Japan
Communication dans un congrès
hal-03712441
v1
|