Christophe Raynaud
117
Documents
Publications
Electrically Active Traps in Bipolar 10 kV 8 A Silicon Carbide (SiC) PiN DiodesInternational Symposium On Semiconductor Materials and Devices ISSMD 2022, Dec 2022, Bhubaneswar, India
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Optimized Junction Termination Extension and Ring System for 11 kV 4H-SiC BJT2022 International Semiconductor Conference (CAS 2022), Oct 2022, Poiana Brasov, Romania. pp.191-194, ⟨10.1109/CAS56377.2022.9934390⟩
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Mesure et analyse de la hauteur de barrière des contacts Schottky Mo sur SiC-4HSymposium de Génie Electrique (SGE'18), Université de Lorraine [UL], Jul 2018, Nancy, France
Communication dans un congrès
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Multi-barrier height characterization and DLTS study on Ti/W 4H-SiC Schottky DiodeECSCRM'18, Sep 2018, Birmingham, United Kingdom
Communication dans un congrès
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Repetitive short-circuit measurement on SiC MOSFETECSCRM'18, Sep 2018, Birmingham, United Kingdom
Communication dans un congrès
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SiC lateral Schottky diode technology for integrated smart power converter2018 IEEE ICIT, Feb 2018, Lyon, France. ⟨10.1109/ICIT.2018.8352287⟩
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Robustness study of 1700 V 45 mΩ SiC MOSFETs2018 IEEE ICIT, Feb 2018, Lyon, France. ⟨10.1109/ICIT.2018.8352285⟩
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First steps of SiC integrated electronic functions for a smart power driver dedicated to harsh environmentsCAS, Oct 2017, Sinaia, Romania. ⟨10.1109/SMICND.2017.8101191⟩
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Near breakdown voltage optical beam induced current (OBIC) on 4H-SiC bipolar diodeInternational Conference on Silicon Carbide and Related Materials 2017 (ICSCRM 2017), Sep 2017, Washington, United States. pp.TH.DP.4
Communication dans un congrès
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Very High Sustainable Forward Current Densities on 4H-SiC P+N- Junctions formed by localized VLS P+ epitaxyECSCRM'16, Sep 2016, Halkidiki, Greece
Communication dans un congrès
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Realization and characterization of carbonic layers on 4H-SiC for electrochemical detectionsECSCRM'16, Sep 2016, Halkidiki, Greece. pp.WeP-52
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Thermally stable ohmic contact to p-type 4H-SiC based on Ti3SiC2 phaseICSCRM, Oct 2015, Giardini Naxos, Italy
Communication dans un congrès
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Lifetime of holes determination in 4H-SiC using two-photon optical beam induced current methodCAS, Oct 2015, Sinaia, Romania. ⟨10.1109/SMICND.2015.7355226⟩
Communication dans un congrès
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Localized VLS Epitaxy Process as a P-type Doping Alternative Technique for 4H-SiC P/N JunctionsSemiconductor Interface Specialists Conference (SISC 2015), Dec 2015, Arlington, United States
Communication dans un congrès
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Classic and alternative methods of p-type doping 4H-SiC for integrated lateral devicesCAS, Oct 2015, Sinaia, Romania. pp.145 - 148, ⟨10.1109/SMICND.2015.7355190⟩
Communication dans un congrès
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Imagerie 2D du champ électrique dans les diodes SiC-4H haute tension par la technique OBICSymposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France
Communication dans un congrès
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4H-SiC P-N junctions realized by VLS for JFET lateral structuresECSCRM'14, Sep 2014, Grenoble, France. pp.TU-P-61
Communication dans un congrès
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Two-dimensional Optical Beam Induced Current measurements in 4H-SiC bipolar diodes2014 IEEE PRIME, Jun 2014, Grenoble, France. ⟨10.1109/PRIME.2014.6872761⟩
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Temperature Dependence of 4H-SiC Ionization Rates Using Optical Beam Induced CurrentECSCRM'14, Sep 2014, Grenoble, France. pp.MO2-IP-08
Communication dans un congrès
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Wide bandgap semiconductors for ultra high voltage devices. Design and characterization aspectsCAS, Oct 2014, Sinaia, Romania. pp.35 - 40, ⟨10.1109/SMICND.2014.6966383⟩
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Thermal stability of SiC JFETs in conduction modeEPE, Sep 2013, Lille, France. paper 223, ⟨10.1109/EPE.2013.6631881⟩
Communication dans un congrès
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Thermal Runaway Robustness of SiC VJFETsCSCRM, Sep 2012, Saint-Pétersbourg, Russia. 2p
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Thermal Requirements of SiC Power Devices6th European Advanced Technology Workshop on Micropackaging and Thermal Management, Feb 2011, La Rochelle, France
Communication dans un congrès
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OBIC measurements on avalanche diodes in 4H-SiC for the determination of impact ionization coefficientsCSCRM, Sep 2011, Cleveland, United States
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Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature ApplicationsCIMA, Mar 2011, Beyrouth, Lebanon. pp.CD
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Die Attach of Power Devices Using Silver Sintering - Bonding Process Optimization and CharacterizationHiTEN 2011, Jul 2011, Oxford, United Kingdom. pp.1-7
Communication dans un congrès
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SIMS analyses applied to open an optical window in 4H-SiC devices for electro-optical measurementsICSCRM, Sep 2011, Cleveland, United States
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Avalanche Diodes with Low Temperature Dependence in 4H-SiC Suitable for Parallel ProtectionCSCRM, Aug 2010, Oslo, Norway
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Characterization of 4H-SiC junction barrier Schottky diodes by admittance vs. temperature analysesEuropean Conference on Silicon Carbide and Related Materials ECSCRM 2008, Sep 2008, Barcelone, Spain
Communication dans un congrès
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Normally-on devices and circuits, SiC and high temperature : using SiCJFETs in power converters5th CIPS, Mar 2008, Nuremberg, Germany. pp.08.2
Communication dans un congrès
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Contact ohmique de faible résistivité sur SiC-4H dopé type-P4eme colloque sur les Matériaux du Génie Electrique, May 2008, Toulouse, France
Communication dans un congrès
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SiC Power Semiconductor Devices for new Applications in Power Electronics13th IEEE PEMC, Sep 2008, Poznan, Poland. pp.2457 - 2463, ⟨10.1109/EPEPEMC.2008.4635632⟩
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Comparison of electrical properties of ohmic contact realized on p-type 4H-SiCICSCRM'2007, Oct 2007, Otsu, Japan
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Determination of ambipolar lifetime and epilayer thickness of 5 kV SiC bipolar devices by switching transient studiesICSCRM'2007, Oct 2007, Otsu, Japan. pp.1031-1034, ⟨10.4028/www.scientific.net/MSF.600-603.1031⟩
Communication dans un congrès
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OBIC Analysis of Different Edge Terminations of Planar 1.6 kV 4H-SiC DiodesCSCRM, Oct 2006, Newcastle upon Tyne, United Kingdom. pp.1007-1010, ⟨10.4028/www.scientific.net/MSF.556-557.1007⟩
Communication dans un congrès
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Diode PiN SiC-4H 1,2kV sur épi-wafer SiCrystal11ème colloque Electronique de Puissance du Futur, Jul 2006, Grenoble, France
Communication dans un congrès
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Optimisation de la structure double RESURF d’un transistor JFET latéral SiC-4H pour le développement de convertisseurs de puissance intégrés11ème colloque Electronique de Puissance du Futur, Jul 2006, Grenoble, France
Communication dans un congrès
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Conception d'un transistor JFET 5 kV en SiC-4H10ème colloque Electronique de Puissance du Futur, Sep 2004, Toulouse, France
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Silicon Carbide Controlled Current Limiter, Current Limitation Strategies, Foreseen Applications and BenefitsInternational Power Electronics and Motion Control (IPEMC'04), Aug 2004, Xi'an, China
Communication dans un congrès
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HIGH VOLTAGE AND SPECIFIC POWER SILICON CARBIDE DEVICES10ème colloque Electronique de Puissance du Futur, Sep 2004, Toulouse, France
Communication dans un congrès
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A 3.5 kV thyristor in 4H-SiC with a JTE peripheryEuropean Conference on Silion Carbide and Related Materials (ECSCRM 2004), Sep 2004, Bologne, Italy
Communication dans un congrès
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P-type SiC layers formed by VLS induced selective epitaxial growthEuropean Conference on Silion Carbide and Related Materials (ECSCRM 2004), Sep 2004, Bologne, Italy
Communication dans un congrès
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Influence of different peripheral protections on the breakover voltage of a 4H-SiC GTO thyristorInternational Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France
Communication dans un congrès
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Design, fabrication and characterisation of 5 kV 4H-SiC p + n planar bipolar diodes protected by junction termination extensionInternational Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France
Communication dans un congrès
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SiC-based current limiter devicesInternational Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France. pp.951-956, ⟨10.4028/www.scientific.net/MSF.457-460.951⟩
Communication dans un congrès
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Electrothermal simulations of silicon carbide current limiting devices2003 IEEE International Conference on Industrial Technology, Dec 2003, Maribor, Slovenia. pp.1135-1140, ⟨10.1109/ICIT.2003.1290823⟩
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Design and simulation of a planar anode GTO thyristor on SiCCAS (International Semiconductor Conference), Sep 2003, Sinaia, Romania. pp.222, ⟨10.1109/SMICND.2003.1252421⟩
Communication dans un congrès
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Silicon Carbide specific components for power electronics system protectionInternational Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France
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OBIC measurements on 1.3 kV 6H-SiC bipolar diodes protected by Junction Lateral ExtensionEuropean Conference on Silicon Carbide and Related Materials (ECSCRM 2002), Sep 2002, Linköping, Sweden
Communication dans un congrès
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Very low R/sub ON/ measured on 4H-SiC accu-MOSFET high power device14th International Symposium on Power Semiconductor Devices and ICs, Jun 2002, Sante Fe, United States. pp.209-212, ⟨10.1109/ISPSD.2002.1016208⟩
Communication dans un congrès
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Contact resistivity of Al/Ti ohmic contacts on p-type ion implanted 4H and 6H-SiC2002 MRS Fall Meeting, Dec 2002, Boston, United States. ⟨10.1557/PROC-742-K6.2⟩
Communication dans un congrès
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Substrat SiCOI : Avancées vers les applications « System on Chip »EPF2002 - Colloque 2002, Electronique de Puissance du Futur, Nov 2002, Montpellier, France
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SiC On Insulator as substrate for power Schottky diodesEuropean Conference on Silicon Carbide and Related Materials (ECSCRM 2002), Sep 2002, Linköping, Sweden
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Limiteur de courant à forte densité de puissance en carbure de siliciumElectronique de Puissance du Futur (EPF 2002), Nov 2002, Montpellier (FR), France
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Characterization of a 4H-SiC High Power Density Controlled Current LimiterEuropean Conference on Silicon Carbide and Related Materials (ECSCRM 2002), Sep 2002, Linköping, Sweden
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4H-SiC bipolar power diodes realized by ion implantationCAS 2001 International Semiconductor Conference, Oct 2001, Sinaia, Romania. pp.349-352, ⟨10.1109/SMICND.2001.967481⟩
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Realization of a High Current and Low RON 600V Current Limiting DeviceInternational Conference on Silicon Carbide and Related Materials, Oct 2001, Tsukuba, Japan
Communication dans un congrès
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A comparative study of high temperature Aluminium post-implantation annealing in 6H and 4H-SiC, non-uniformity temperature effectsICSCRM, Oct 2001, Tsukuba, Japan
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Bipolar silicon carbide power diodes realized by aluminum implantations and high temperature rf-annealing43rd Electronic Materials Conference (EMC 2001), Jun 2001, Notre Dame, IN, United States
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Study of 4H-SiC high voltage bipolar diodes under reverse biases using electrical and Obic characterizationICSCRM, Oct 2001, Tsukuba, Japan
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Study of 6H-SiC high voltage bipolar diodes under reverse biasesEuropean Materials Research Society (E-MRS Spring Meeting) 2001, Jun 2001, Strasbourg, France
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The negative temperature coefficient of the breakdown voltage of SiC p-n structures and deep centers in SiCInternational Conference on Silicon Carbide and Related Materials ICSCRM'95, Sep 1995, Kyoto, Japan
Communication dans un congrès
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Optical Beam Induced Current Measurements: principles and applications to SiC device characterisationPeter Friedrichs, Tsunenobu Kimoto, Lothar Ley, Gerhard Pensl. Silicon Carbide: Volume 1: Growth, Defects, and Novel Applications, Wiley, 319-340 (chapitre 12), 2009
Chapitre d'ouvrage
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